JP2005062699A - Transflective substrate and method for manufacturing the same, electro-optical device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transflective substrate excellent in display quality by improving the adhesion between a transflective layer made of a material containing silver and a substrate, a manufacturing method thereof, an electro-optical device and an electronic apparatus using the same.
A transflective substrate 20 includes a transflective layer 30 having a transmissive portion 31a and a reflective portion 31b on a first substrate 21, and an extraction wiring 127 in a panel seal. The transflective layer 30 and the lead-out wiring 127 corresponding to the reflective portion 31b are respectively disposed on the base layer 29 and the base layer 29 made of at least one material selected from TiO ₂ or Ta ₂ O _5. The first Ag alloy layers 30a and 127a and the second Ag alloy layers 30b and 127b disposed on the first Ag alloy layers 30b and 127b, respectively.
[Selection] Figure 2

Description

  The present invention relates to a transflective substrate provided with a transflective layer having reflective characteristics and transmissive characteristics, a manufacturing method thereof, an electro-optical device, and an electronic apparatus.

  As an example of an electro-optical device, there is a reflective transflective liquid crystal device that can be realized by switching between transmissive display and reflective display in accordance with the surrounding environment. This type of liquid crystal device has a structure in which a liquid crystal layer is sandwiched between a pair of substrates. On one substrate, a reflection portion for reflecting external light, an opening of a reflection film, and the like are provided for each pixel. A transflective layer is formed which includes a transmissive portion formed by the above. In addition, an alignment film for aligning liquid crystals is provided on the surface of each of the pair of substrates that is in contact with the liquid crystal layer. In such a liquid crystal device, when the illumination means is turned on, the illumination light is transmitted through the transmission part of the semi-transmissive reflection layer, and when the illumination means is turned off, the external light is reflected by the reflection part of the semi-transmission reflection layer. Thus, the reflective display is realized.

Conventionally, aluminum is generally used as the transflective layer material, but it has been proposed to use silver having higher reflection characteristics (see Patent Document 1).
JP-A-11-52366 (paragraphs [0004] to [0006], FIG. 1).

  However, silver has a disadvantage that it has low adhesion to a substrate such as glass or plastic, and when a silver thin film is formed on the substrate, it is easily peeled off from the substrate. In particular, the rubbing treatment performed when the alignment film is formed tends to cause problems such as peeling of the silver thin film and displacement of the formation position. For this reason, many transflective substrates have been defective. For example, the transflective layer is peeled off by rubbing or the like, causing a deviation from the design value in the display characteristics, or the peeled reflective layer part film is reattached to the opening or other pixel serving as the transmissive part. The display characteristics were impaired. For example, when the lead wiring is provided on the substrate in the same layer as the transflective layer, a signal to the electrode used when driving the liquid crystal formed on the substrate because the lead wiring is peeled off or shifted. Supply was not performed correctly and the display characteristics were impaired. The present invention solves the above-mentioned problems, and its problem is to improve the adhesion of a transflective layer made of a silver-containing material to the substrate and to provide excellent display quality, and a method for manufacturing the transflective reflective substrate. It is an object of the present invention to provide an electro-optical device and an electronic apparatus using the above.

In order to solve the above problems, a transflective substrate according to the present invention is a transflective substrate in which a transflective layer having a transmissive portion and a reflective portion and a wiring are provided on the substrate. The reflective part of the transmissive reflective layer and the wiring are a base layer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ , a metal layer containing Ag disposed on the base layer, It has the laminated structure of the above.

According to such a configuration of the present invention, the adhesion between the substrate and the metal layer can be improved by providing the base layer, and the peeling resistance of the transflective layer and the wiring is improved. As a result, it is possible to obtain a highly reliable transflective substrate free from the problem of wiring defects.
In addition, a colored layer that overlaps the transflective layer in a plane is further provided.

  In this manner, a transflective layer having a color filter function by providing a colored layer can be obtained. For example, in the manufacturing process of the colored layer using the photolithography method, there are a high-temperature treatment process and a chemical solution treatment process. However, by providing the base layer, there is no problem of peeling of the transflective layer and the wiring in these processes.

The method for producing a transflective substrate of the present invention includes a step of forming a base layer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ on the substrate, and Ag on the base layer. And a step of patterning the metal layer into a predetermined shape to form a transflective layer and a wiring.

  According to such a configuration of the present invention, the adhesion between the substrate and the metal layer can be improved by providing the base layer, and the peel resistance of the transflective layer is improved. Thereby, a semi-transmissive reflective substrate with high reliability can be obtained without peeling off the semi-transmissive reflective layer even in the wet etching process at the time of patterning.

  The method for manufacturing a transflective substrate according to claim 3, further comprising a step of patterning the base layer into a predetermined shape.

  In this way, the underlayer may be formed so as to be patterned into a predetermined shape.

  The underlayer forming step and the metal layer forming step are performed continuously.

  In this way, the cleanliness of the laminated interface is achieved by continuously performing the base film formation step and the metal layer formation step, in other words, by placing the space between after the base film formation and before the metal layer formation under vacuum or oxygen-free. Can keep.

  The electro-optical device of the present invention includes the transflective substrate described above or the transflective substrate manufactured by the method for manufacturing the transflective substrate described above.

  According to such a configuration of the present invention, since the semi-transmissive reflective layer or the wiring is reliably formed at a desired position on the semi-transmissive reflective substrate, a high-quality electro-optical device free from display defects and wiring connection defects can be obtained. Can be obtained.

Another electro-optical device of the present invention includes a semi-transmissive reflective layer having a transmissive portion and a reflective portion, a first electrode disposed so as to overlap the semi-transmissive reflective layer in a plan view, and a half provided with a lead-out wiring. An electro-optical device comprising: a transflective substrate; and a counter substrate provided with a second electrode facing the transflective substrate and electrically connected to the extraction wiring, wherein the transflective layer includes: The reflection portion and the lead-out wiring are a laminated structure of a base layer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ and a metal layer containing Ag arranged on the base layer It is characterized by having.

  According to such a configuration of the present invention, since the transflective layer and the lead-out wiring are reliably formed at a desired position on the transflective substrate, a high-quality electro-optical device free from display defects and wiring connection defects Can be obtained.

  Another electro-optical device of the present invention includes a semi-transmissive reflective layer having a transmissive portion and a reflective portion, a first electrode disposed so as to overlap the semi-transmissive reflective layer in a plan view, and a half provided with a lead-out wiring. An electro-optical device comprising: a transflective substrate; and a counter substrate provided with a second electrode facing the transflective substrate and electrically connected to the extraction wiring, wherein the transflective layer includes: The reflective portion and the lead-out wiring have a base layer made of an inorganic insulating film, and a metal layer containing Ag disposed on the base layer.

  According to such a configuration, by using the inorganic insulating film as the base layer, for example, leakage or short-circuit between wirings formed of an Ag alloy can be prevented.

Further, on the transflective substrate, an underlayer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ is disposed on the transflective substrate, and disposed on the underlayer. An input terminal portion made of a metal layer containing Ag is disposed.
According to such a configuration, since the input terminal portion is not peeled off, it is possible to obtain an electro-optical device having no poor connection between the external wiring board and the input terminal portion.

Another electro-optical device of the present invention includes a base layer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ on a substrate, and a metal containing Ag formed on the base layer. It has a wiring or a terminal made of a layer.

  In this way, the terminal can be formed in the same laminated structure as the transflective layer, and there is no problem of peeling of the input terminal portion by providing the base layer.

  An electronic apparatus according to an aspect of the invention includes the electro-optical device described above and a control unit that controls the electro-optical device.

  Examples of the electronic device include a mobile phone, a portable information terminal, an electronic wristwatch, and the like, and an electronic device having a bright reflective display screen can be obtained.

  As described above, according to the present invention, the semi-transmissive reflective layer made of a material containing silver is improved in adhesion to the substrate and has excellent display quality, a manufacturing method thereof, and an electro-optical device using the same. In addition, an electronic device can be provided.

  Next, embodiments of a transflective substrate and a manufacturing method thereof, an electro-optical device and an electronic apparatus using the same according to the present invention will be described in detail with reference to the accompanying drawings. In this embodiment, a case where a liquid crystal device is configured as an electro-optical device will be described as an example.

  <Transflective substrate and electro-optical device>

  FIG. 1 is a schematic perspective view illustrating an appearance of a liquid crystal device 100 according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of the liquid crystal device 100 taken along the line BB ′ of FIG. . In addition, illustration of the backlight 40 is abbreviate | omitted in FIG. FIG. 3 is a partial plan view of a transflective layer provided on a transflective substrate that constitutes the liquid crystal device 100. FIG. 4 is a schematic plan view showing the formation region of the transflective layer, the lead-out wiring, and the input terminal portion provided on the transflective substrate constituting the liquid crystal device 100. Here, in order to make the drawing easy to see, the number of openings provided in the transflective layer is shown to be smaller than the actual number. FIG. 5 is a partial plan view of the transflective substrate showing the positional relationship between the transflective layer and the colored layer.

  The liquid crystal device 100 has a so-called reflective transflective passive matrix structure. As shown in FIGS. 1 and 2, the liquid crystal device 100 includes a liquid crystal panel 60 and a backlight 40 provided adjacent to the liquid crystal panel 60. The liquid crystal panel 60 includes a transflective substrate 20 having a transparent first substrate 21 made of a glass plate, a synthetic resin plate, or the like as a base, and a counter substrate 10 having a similar second substrate 1 opposite thereto as a base. Have. The transflective substrate 20 and the counter substrate 10 are bonded together via a sealing material 53, and the liquid crystal 55 injected from the injection port 53a is sandwiched in a space surrounded by both the substrates and the sealing material 53. . The injection port 53 a is sealed with a sealing material 56. Further, a pair of polarizing plates 51 and 52 are arranged so as to sandwich the transflective substrate 20 and the counter substrate 10.

  On the inner surface of the first substrate 21 (the surface facing the second substrate 1), a plurality of first transparent electrodes 27 as first electrodes are arranged in parallel in a stripe shape, and on the inner surface of the second substrate 1, A plurality of second transparent electrodes 2 as second electrodes are arranged in parallel in a stripe shape. The first transparent electrode 27 is conductively connected to the wiring 61, and the second transparent electrode 2 is conductively connected to the wiring 70. The first transparent electrode 27 and the second transparent electrode 2 are orthogonal to each other, and the intersection region thereof constitutes a large number of pixels 100P arranged in a matrix, and these pixel arrangements constitute a display region A. In the present embodiment, the area actually displayed is referred to as a pixel. In the present embodiment, the region where the first transparent electrode 27 and the second transparent electrode 2 intersect with each other is planarly overlapped with a light shielding layer 24 to be described later, so that the pixel 100P that actually contributes to the display is a lattice. The region is partitioned by the light shielding layer 24 formed in a shape.

  The first substrate 21 has a substrate overhanging portion 21 </ b> T that projects outward from the outer shape of the second substrate 1. A lead-out wiring 127 is provided on the substrate overhanging portion 21T and a side orthogonal to the side where the overhanging portion 21T is located. The lead-out wiring 127 is conductively connected through a vertical conduction part 53 b configured by a part of the wiring 70 and the sealing material 53. Furthermore, an input terminal portion 258 composed of a plurality of wiring patterns, which are external connection terminals formed independently, is formed on the substrate extension portion 21T. A semiconductor IC chip 57 incorporating a liquid crystal driving circuit and the like is mounted on the substrate extension portion 21T so as to be conductively connected to the wiring 61, the lead-out wiring 127, and the input terminal portion 258. In addition, a flexible wiring board 59 is mounted on the end portion of the board extension part 21T so as to be conductively connected to the input terminal part 258. A drive signal is input to the first transparent electrode 27 from the semiconductor IC chip 57 via the wiring 61. On the other hand, a drive signal is input to the second transparent electrode 2 from the semiconductor IC chip 57 through the lead wiring 127, the vertical conduction portion 53 b, and the wiring 70.

  The backlight 40 includes a light source 43 composed of LEDs (light emitting diodes) and the like, a light guide plate 44 composed of a transparent material such as acrylic resin, and a reflection plate 42 disposed behind the light guide plate 44. Yes. A diffusion plate 41 is disposed on the front side of the light guide plate 44, and light collecting plates 45 and 46 are disposed on the front side thereof. The light collectors 45 and 46 are for increasing the directivity of the illumination light of the backlight 40.

  Next, the structure of the transflective substrate 20 will be described in detail with reference to FIGS.

As shown in FIGS. 2 and 4, on the first substrate 21, a transflective layer 30, a panel seal lead wire 127, a panel seal lead wire 128 and an input terminal portion 258 are provided. The transflective layer 30 and the panel seal lead-out wiring 127 have the same laminated structure. That is, the transflective layer 30 includes a TiO ₂ layer 29 as an underlayer, and a first Ag (silver) alloy layer 30a made of an Ag (silver) -Nd (neodymium) -Cu (copper) alloy as a metal layer containing Ag. , Three layers of a second Ag (silver) alloy layer 30b made of an Ag (silver) -Pd (palladium) alloy are sequentially stacked. The lead wire 127 in the panel seal includes a TiO ₂ layer 29 as a base layer, a first Ag (silver) alloy layer 127a made of an Ag (silver) -Nd (neodymium) -Cu (copper) alloy as a metal layer containing Ag, Three layers of a second Ag (silver) alloy layer 127b made of an Ag (silver) -Pd (palladium) alloy are sequentially stacked.

The TiO ₂ film 29 functions as a base layer for improving the adhesion between the first Ag alloy layers 30 a and 127 a and the first substrate 21. Here, when the Ag alloy layer is formed directly on the first substrate 21, there is a problem that the Ag alloy is easily peeled off when a physical force such as a rubbing process is applied during the transflective substrate manufacturing process. On the other hand, in this example, the TiO ₂ film 29 was provided as the underlayer to improve the peeling resistance of the Ag alloy layer. Here, the TiO ₂ film is formed as the base layer, but an inorganic insulating film such as a Ta ₂ O ₅ film may be formed in addition, and similarly high adhesion can be obtained. In the present embodiment, since the lead wiring having the same laminated structure as the transflective layer is formed, it is preferable to use an inorganic insulating film as the base layer. This is because leakage and short-circuiting between wirings formed of an Ag alloy can be prevented. However, if it is a material that can be easily processed, such as an ITO film, as a base film, the film between Ag alloy wirings can be removed by pattern processing to prevent leakage and short circuit between the wirings, and the number of processes increases. However, the same effect can be obtained. In addition, when a wiring having the same laminated structure as that of the semi-transmissive reflective layer is not formed, an inorganic insulating film such as an ITO (Indium Tin Oxide) film or a Ta ₂ O ₅ film or a semi-insulating film is used as a base layer. A ZnO film or a SnO film may be used, and similarly high adhesion can be obtained.

  As the first Ag alloy layer 30a, a heat resistant alloy layer containing Ag as a main component and at least one element selected from Nd (neodymium) and Cu (copper) can be used. As the second Ag alloy layer 30b, Ag is a main component and at least one element of Cu (copper), Ru (ruthenium), Pd (palladium), Au (gold), and Pt (platinum) is added. A chemical resistant alloy layer can be used.

  Thus, the semi-transmissive reflective layer 30 having high heat resistance can be obtained by using the above-described member as the first Ag alloy layer 30a. That is, in the case of using pure Ag, there has been a problem that the film is ruptured due to aggregation of particles in the firing process which is a high-temperature heat treatment in the colored layer forming process described later. The semi-transmissive reflective layer 30 with high heat resistance without the problem of tearing of the film can be obtained. Here, the film thickness of the first Ag alloy layer 30a is set to 50% or more, more preferably 70% or more of the total thickness of the first Ag alloy layer 30a and the second Ag alloy layer 30b, that is, the film thickness of the transflective layer 30. As a result, the heat resistance of the entire transflective layer 30 can be sufficiently maintained. In the present embodiment, the film thickness of the first Ag alloy layer 30a is 180 nm, and the film thickness of the second Ag alloy layer 30b is 20 nm.

  In addition, by using the above-described member as the second Ag alloy layer 30b, damage to the surface of the semi-transmissive reflective layer 30 due to immersion of an alkaline developer or the like during the development processing step in the colored layer forming step described later, This can be reduced as compared with the case of using pure Ag. Thereby, the fall of the reflectance of the transflective layer 30 surface can be prevented. At this time, it is desirable that the Ag content of the second Ag alloy layer 30b is 99 wt% or more, and thereby the short wavelength region reflectance near 400 nm is equivalent to Al (about 91% in absolute reflectance) or more. And the reflectance in the entire visible region can also be close to the pure Ag level. In addition, it is desirable to suppress the content of elements other than Ag in the second Ag alloy layer 30b to a content at which resistance to chemicals such as an alkali developer is obtained at a necessary level based on the above-described content.

  As shown in FIGS. 2 to 5, the transflective layer 30 has an opening 30 c. The semi-transmissive reflective layer 30 includes a transmissive portion 31a corresponding to the opening 30c and a reflective portion 31b that substantially reflects light in which two alloy layers are disposed for each pixel 100P. As shown in FIG. 4, the transflective layer 30 is disposed in the display area A, and the in-panel seal lead wiring 127 is disposed outside the display area A.

As shown in FIG. 2, a light-shielding layer 24 provided in a lattice shape and a colored layer 25 are arranged on the transflective layer 30 so as to fill a region partitioned by the light-shielding layer 24. Is covered with a surface protective layer (overcoat layer) 26 made of a transparent resin or the like. As shown in FIG. 5, striped colored layers 25 of R, G, and B are arranged in a stripe shape. As shown in FIG. 2, the surface protective layer 26 is subjected to a rubbing process made of a SiO ₂ film having a thickness of 5 nm, a first transparent electrode 27 made of a transparent conductor such as ITO having a thickness of 160 nm, and a polyimide resin. The aligned alignment films 28 are sequentially arranged. The first transparent electrode 27 is configured in stripes corresponding to the colored layers 25 in parallel with the arrangement of the colored layers 25.

  In the present embodiment, as shown in FIG. 5, colored layers 25R, 25G, and 25B are formed on a plurality of pixels 100P, respectively. An opening 25aR is provided in the colored layer 25R provided in the R (red) pixel, and an opening 25aG is provided in the B (blue) pixel in the colored layer 25G provided in the G (green) pixel. The colored layer 25B is provided with an opening 25aB. With the above configuration, a part of the reflective portion 31 b of the transflective layer 30 that overlaps the colored layer 25 in a plan view is not covered with the colored layer 25 and is exposed.

  On the other hand, the counter substrate 10 facing the transflective substrate 20 is subjected to a rubbing treatment made of a second transparent electrode 2 made of a transparent conductor such as ITO, a polyimide resin, etc. on a second substrate 1 made of glass or the like. The alignment films 4 are sequentially laminated.

  As shown in FIG. 2, in the liquid crystal device 100 as described above, in the reflective display, after a part 155 of external light incident from the counter substrate 10 side toward the semi-transmissive reflective layer 30 passes through the colored layer 25. The reflected light 156 is reflected by the reflective portion 31 b of the semi-transmissive reflective layer 30, passes through the counter substrate 10 again, and is emitted to the outside of the liquid crystal device 100. In addition, another part of the external light passes through the opening 25a and is reflected by the reflecting portion 31b, and the reflected light passes through the counter substrate 10 again and is emitted to the outside of the liquid crystal device 100. In this way, the external light passing through the colored layer 25 is reciprocally passed through the colored layer 25 twice and emitted as colored light, and the external light passing through the opening 30 a is not colored at all without passing through the colored layer 25. Emitted as light. Thus, in the reflective display, display is performed with colored light and non-colored light, and the brightness of the reflective display can be improved with non-colored light.

  On the other hand, in the transmissive display, since the colored layer 25 covers the entire transmissive portion 31a of the semi-transmissive reflective layer 30, when the illumination light is irradiated from the backlight 40 arranged behind the semi-transmissive reflective substrate 20, The illumination light passes through the transmissive part 31a, passes through the colored layer 25, passes through the counter substrate 10, and is emitted to the outside of the liquid crystal device 100 to perform display.

  As described above, in this embodiment, since the base layer 29 is provided between the Ag alloy layers 30a and 127a and the first substrate 21, the adhesion of the Ag alloy layer to the substrate can be improved. Therefore, the transflective layer, the lead-out wiring, and the input terminal portion can be arranged at desired positions without peeling off or shifting. Thereby, generation | occurrence | production of a defective transflective board | substrate can be prevented.

  In the transflective layer 30, the opening 30a is surely positioned for each pixel, so that display characteristics are not impaired.

  Further, in the panel seal lead-out wiring 127, the electrical connection position with the second electrode 2 and the electrical connection position with the IC chip 57 are not shifted, and the panel seal lead-out wiring 127 and the second electrode 2 are surely connected. In addition, the lead wire 127 in the panel seal and the IC chip 57 can be electrically connected to each other, and the occurrence of poor wiring connection can be prevented.

  <Method for producing transflective substrate>

  Next, a method for manufacturing the above-described transflective substrate 20 will be described with reference to FIGS.

  6 is a manufacturing process diagram of the transflective substrate 20 (part 1), FIG. 7 is a subsequent manufacturing process diagram of the transflective substrate 20 (part 2), and FIG. It is a manufacturing process figure (the 3). 6 to 8 correspond to the cross-sectional view of FIG. FIG. 9 is a manufacturing flowchart of the transflective substrate 20 corresponding to FIGS.

As shown in FIG. 6A, a TiO ₂ film 29 ′ as a base layer is formed on the first substrate 21 by sputtering or the like. Thereafter, as shown in FIG. 6B, the first substrate 21 is heated to 100 ° C. or higher, for example, 120 ° C., and in this state, the first Ag alloy film made of an Ag—Nd—Cu alloy having a thickness of 180 nm. A second Ag alloy film 30b ′ made of an Ag—Pd alloy with a thickness of 30a ′ and 20 nm is formed by sputtering. The TiO ₂ film 29 ′, the first Ag alloy film 30a ′, and the second Ag alloy film 30b ′ are continuously formed. Here, “continuous” means that the first substrate 21 is placed under vacuum or oxygen-free from the time the TiO ₂ film 29 ′ is formed until the second Ag alloy film 30 b ′ is formed. . For example, both films are formed in a vacuum apparatus, but both films are continuously formed in the same vacuum apparatus, or each film is formed in a different vacuum apparatus and between different vacuum apparatuses. The substrate transfer system may be placed under oxygen-free, for example, nitrogen gas. Thereby, the oxidation of the first Ag alloy film 30a 'can be prevented. In the present embodiment, when an Ag alloy film is formed on the TiO ₂ film 29 ′, the film is formed at a substrate temperature of 100 ° C. or more and 150 ° C. or less. By forming the Ag alloy while the substrate is heated in this manner, the base film 29 ′ and the first Ag alloy film that can sufficiently withstand the wet etching process used for patterning the base film and the Ag alloy film in the subsequent process Adhesiveness with 30a 'can be ensured. When the temperature is lower than 100 ° C., sufficient adhesion cannot be secured, and when the temperature is higher than 150 ° C., the surface reflectance of the second Ag alloy film 30b ′ is lowered.

Next, a resist material is applied by spin coating on the first substrate 21 including the TiO ₂ film 29 ′, the first Ag alloy film 30a ′, and the second Ag alloy film 30b ′. Thereafter, this resist material is patterned into a predetermined shape using a photolithography method, and a resist pattern 200 is formed on the second Ag alloy film 30b ′ shown in FIG. 6C. The resist pattern 200 has an opening at a portion corresponding to the opening 30 c of the transflective layer 30.

Next, using this resist pattern 200 as a mask, the first Ag alloy film 30a ′ and the second Ag alloy film 30b ′ are wet etched with a mixed acid etching solution containing phosphoric acid and nitric acid as main components. Thereafter, the resist pattern 200 is removed with an organic stripping solution. Thereby, the transflective layer 30 having a laminated structure of the TiO ₂ layer 29, the first Ag alloy layer 30a and the second Ag alloy layer 30b shown in FIG. 6D, the TiO ₂ layer 29, the first Ag alloy layer 127a and A lead-out wire 127 in the panel seal having a laminated structure of the second Ag alloy layer 127b is formed. The transflective layer 30 has an opening 30c for each pixel 100P. A portion corresponding to the opening 30c functions as a transmissive portion used during transmissive display when incorporated in the liquid crystal device, and functions other than the transmissive portion in each pixel 100P function as reflective portions used during reflective display. As described above, since the lead wiring 127 can be formed simultaneously with the formation of the semi-transmissive reflective layer 30, it is not necessary to provide a process for forming the lead wiring and the input terminal portion separately from the process of forming the semi-transmissive reflective layer 30, and the manufacturing efficiency is improved. good.

  Next, as shown in FIG. 6 (e), the black pigment was dispersed in the acrylic resin negative resist material by spin coating over the entire surface of the first substrate 21 including the transflective layer 30 and the lead-out wiring 127. A black resin material is applied to form a black resin material film 24 '. Thereafter, the black resin material film 24 ′ is baked and temporarily cured at 100 ° C. for 3 minutes, and then the black resin material film 24 ′ is exposed using the mask 201 and developed with an alkali developer. Thereafter, the film is baked at 230 ° C. for 30 minutes to be fully cured, thereby forming a light shielding layer 24 having a thickness of 1.2 μm as shown in FIG. At this time, the surface of the transflective layer 30 made of an Ag—Pd alloy layer is less damaged by the alkali developer, and its reflection characteristics are not impaired. Further, the transflective layer 30 did not tear even when subjected to a high temperature heating firing process.

  Next, as shown in FIG. 6G, the acrylic resin negative resist material is formed on the entire surface of the first substrate 21 including the transflective layer 30, the panel seal lead-out wiring 127, and the light shielding layer 24 by spin coating. A red resin material in which a red pigment is dispersed is applied to form a red resin material film 25R ′. Thereafter, the red resin material film 25R ′ is baked and temporarily cured at 100 ° C. for 3 minutes, and then the red resin material film 25R ′ is exposed using the mask 202 and developed with an alkali developer. Thereafter, the resultant is baked at 230 ° C. for 30 minutes to be fully cured, thereby forming a red colored layer 25R having a thickness of 1.2 μm as shown in FIG. At this time, the surface of the transflective layer 30 made of an Ag—Pd alloy layer is less damaged by the alkali developer, and its reflection characteristics are not impaired. Further, the transflective layer 30 did not tear even when subjected to a high temperature heating firing process.

  Next, as shown in FIG. 7B, the entire surface of the first substrate 21 including the transflective layer 30, the lead-out wiring 127, the input terminal portion 258, the light shielding layer 24, and the red colored layer 25R is applied by spin coating. A green resin material in which a green pigment is dispersed in an acrylic resin negative resist material is applied to form a green resin material film 25G ′. Thereafter, the green resin material film 25G ′ is baked and temporarily cured at 100 ° C. for 3 minutes, and then the green resin material film 25G ′ is exposed using the mask 203 and developed with an alkali developer. Thereafter, the resultant is baked at 230 ° C. for 30 minutes to be fully cured, thereby forming a green colored layer 25G having a thickness of 1.2 μm as shown in FIG. 7C. At this time, the surface of the transflective layer 30 made of an Ag—Pd alloy layer is less damaged by the alkali developer, and its reflection characteristics are not impaired. Further, the transflective layer 30 did not tear even when subjected to a high temperature heating firing process.

  Next, as shown in FIG. 7D, on the entire surface of the first substrate 21 including the transflective layer 30, the lead-out wiring 127, the input terminal portion 258, the light shielding layer 24, the red colored layer 25R, and the green colored layer 25G. Then, a blue resin material in which a blue pigment is dispersed is applied to an acrylic resin negative resist material by a spin coating method, and a blue resin material film 25B ′ is applied. Thereafter, the blue resin material film 25B ′ is baked at 100 ° C. for 3 minutes to be temporarily cured, and then the blue resin material film 25B ′ is exposed using the mask 204 and developed with an alkali developer. Thereafter, baking is performed at 230 ° C. for 30 minutes to perform main curing, thereby forming a blue colored layer 25B having a thickness of 1.2 μm as shown in FIG. At this time, the surface of the transflective layer 30 made of an Ag—Pd alloy layer is less damaged by the alkali developer, and its reflection characteristics are not impaired. Further, the transflective layer 30 did not tear even when subjected to a high temperature heating firing process.

  Next, as shown in FIG. 8B, a surface protective layer 26 made of a negative resist transparent resin film having a thickness of 2.6 μm is applied so as to cover the colored layer 25.

Thereafter, as shown in FIG. 8C, a 5 nm thick SiO ₂ film 36 and a 160 nm thick ITO (Indium Tin Oxide) film 27 ′ are continuously formed on the overcoat layer 26 by sputtering. . Next, a resist pattern having a predetermined shape is formed on the ITO film 27 ′, and the ITO film 27 ′ is etched using this resist pattern as a mask, and the resist pattern is removed to obtain the stripe shape shown in FIG. A first transparent electrode 27 is obtained.
Next, an alignment film material made of polyimide is applied to the entire surface of the first substrate 21 including the first transparent electrode 27, and this is rubbed to form an alignment film 28, whereby the transflective substrate 20 is completed. In the present embodiment, since the TiO ₂ film 29 is formed as the underlayer between the first Ag alloy layers 30 a and 127 a and the first substrate 21, the first Ag alloy layers 30 a and 127 a and the first substrate 21 are separated from each other. Good adhesion. Therefore, even when a physical force is applied to the substrate as in the rubbing process, the transflective layer 30, the lead-out wiring 127, and the input terminal portion are not peeled off or shifted, and the transflective substrate 20 having high reliability is obtained. Can be obtained.

Here, as shown in FIGS. 6B to 6D, after a two-layer alloy film is formed, this is collectively patterned to form a transflective layer. The transflective layer may be formed using mask sputtering. That is, as shown in FIG. 10A, after the TiO ₂ layer 29 is formed on the first substrate 21, as shown in FIG. 10B, it corresponds to the reflective portion and the lead-out wiring of the semi-transmissive reflective layer 30. The first Ag alloy layer 30a made of an Ag—Nd—Cu alloy and the second Ag alloy layer 30b made of an Ag—Pd alloy may be continuously formed by sputtering using a mask 205 having an opening in a region to be formed. In this case, steps such as formation of a resist pattern, etching using the resist pattern as a mask, and removal of the resist pattern as shown in FIGS. 6C and 6D are not required.

  <Electronic equipment>

  Next, with reference to FIG. 11 and FIG. 12, an embodiment of the electronic apparatus according to the present invention will be described. In this embodiment, an embodiment in which the liquid crystal panel 60 of the electro-optical device is used as a display unit of an electronic apparatus will be described.

  FIG. 11 is a schematic configuration diagram showing an overall configuration of a control system (display control system) for the liquid crystal panel 60 in the electronic apparatus of the present embodiment. The electronic device shown here includes a display control circuit 510 including a display information output source 511, a display information processing circuit 512, a power supply circuit 513, and a timing generator 514.

  Further, the liquid crystal panel 60 similar to the above has a drive circuit 60B for driving the display area A (in the illustrated example, a liquid crystal drive circuit constituted by a semiconductor IC chip directly mounted on the liquid crystal panel).

  The display information output source 511 includes a memory composed of a ROM (Read Only Memory), a RAM (Random Access Memory), a storage unit composed of a magnetic recording disk, an optical recording disk, and the like, a tuning circuit that tunes and outputs a digital image signal, and the like. The display information is supplied to the display information processing circuit 512 in the form of an image signal or the like of a predetermined format based on various clock signals generated by the timing generator 514.

  The display information processing circuit 512 includes various well-known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit, and executes processing of input display information to obtain image information. Are supplied to the drive circuit 60B together with the clock signal CLK. The drive circuit 60B includes a scanning line drive circuit, a signal line drive circuit, and an inspection circuit. The power supply circuit 513 supplies a predetermined voltage to each component described above.

  FIG. 12 shows a mobile phone which is an embodiment of an electronic apparatus according to the present invention. The mobile phone 600 includes an operation unit 601 and a display unit 602. A plurality of operation buttons are arranged on the front surface of the operation unit 601, and a microphone is built in the transmitter unit. In addition, a speaker is disposed inside the receiver unit of the display unit 602.

  In the display unit 602, the circuit board 610 is disposed inside the case body, and the liquid crystal panel 60 is mounted on the circuit board 610. The liquid crystal panel 60 installed in the case body is configured so that the display surface can be viewed through the display window 60A.

  Other electronic devices to which the liquid crystal device according to the present invention can be applied include a liquid crystal television, a viewfinder type / monitor direct view type video tape recorder, a car navigation device, a pager, an electronic notebook, a calculator, a word processor, a workstation, A video phone, a POS terminal, a digital still camera, etc. are mentioned.

  The electro-optical device according to the present invention can be applied not only to a simple matrix type liquid crystal device but also to an active matrix type liquid crystal device.

1 is a schematic perspective view showing an overall configuration of an embodiment of a liquid crystal device according to the present invention. It is a longitudinal cross-sectional view which shows typically the cross-section cut | disconnected by line | wire BB 'of FIG. It is a top view which shows the planar shape of the transflective layer of the Example. It is a top view of the transflective board | substrate which shows the position of a transflective layer and extraction wiring. It is a schematic plan view which shows the formation position of the colored layer of a transflective board | substrate. It is a manufacturing process figure (the 1) of a transflective board | substrate. It is a manufacturing process figure (the 2) of a transflective board | substrate. It is a manufacturing process figure (the 3) of a transflective board | substrate. It is a manufacturing flowchart figure of a transflective board | substrate. It is a figure which shows a part of manufacturing process of the transflective board | substrate of another example. It is a block diagram showing the configuration of an electronic apparatus according to the present invention. It is a schematic perspective view which shows the external appearance of the mobile telephone which is an Example of an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... 2nd board | substrate, 2 ... 2nd transparent electrode, 20 ... Transflective board | substrate, 21 ... 1st board | substrate, 25 ... Colored layer, 27 ... 1st transparent electrode, 28 ... alignment film, 29 ... TiO ₂ film, 30 ... semi-transmissive reflective layer, 30a, 127a ... first alloy layer, 30a '... first alloy film, 30b, 127b · · · second alloy layer, 30b' ··· second alloy film, 30c · · · openings, 31a · · · transmission portion, 31b · · · reflective portion, 36 · · · SiO ₂ film, 60B · · · drive Circuit, 100 ... Liquid crystal device, 127 ... Lead wire inside panel seal, 128 ... Lead wire outside panel seal 128, 600 ... Mobile phone

Claims (11)

A transflective substrate in which a transflective layer having a transmissive portion and a reflective portion and a wiring are provided on a substrate,
The reflective part of the transflective layer and the wiring are
It has a laminated structure of a base layer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ and a metal layer containing Ag arranged on the base layer. Transflective substrate.   The transflective substrate according to claim 1, further comprising a colored layer that overlaps the transflective layer in a planar manner. Forming a base layer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ on a substrate;
A step of forming a metal layer containing Ag on the underlayer; and a step of patterning the metal layer into a predetermined shape to form a transflective layer and a wiring. Method.   The method for manufacturing a transflective substrate according to claim 3, further comprising a step of patterning the base layer into a predetermined shape.   The method for manufacturing a transflective substrate according to claim 3 or 4, wherein the underlayer forming step and the metal layer forming step are continuously performed.   A transflective substrate manufactured by the transflective substrate according to any one of claims 1 to 2, or the transflective substrate manufactured by the method for manufacturing a transflective substrate according to any one of claims 3 to 5. An electro-optical device comprising: A transflective substrate having a transflective layer having a transmissive portion and a reflective portion, a first electrode disposed so as to overlap the transflective layer in a plane, and a lead wiring;
A counter substrate provided with a second electrode facing the transflective substrate and electrically connected to the lead wiring;
An electro-optical device comprising:
The reflective portion of the transflective layer and the lead-out wiring are a metal including Ag, disposed on the underlayer, and an underlayer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ And an electro-optic device. A transflective substrate having a transflective layer having a transmissive portion and a reflective portion, a first electrode disposed so as to overlap the transflective layer in a plane, and a lead wiring;
A counter substrate provided with a second electrode facing the transflective substrate and electrically connected to the lead wiring;
An electro-optical device comprising:
The electro-optical device, wherein the reflective portion of the transflective layer and the lead-out wiring have a base layer made of an inorganic insulating film, and a metal layer containing Ag disposed on the base layer. On the transflective substrate, an input comprising an underlayer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ and an Ag-containing metal layer disposed on the underlayer. 9. The electro-optical device according to claim 8, further comprising a terminal portion. On the substrate, a wiring or terminal composed of a base layer made of at least one material selected from ITO, TiO ₂ or Ta ₂ O ₅ and a metal layer containing Ag formed on the base layer. An electro-optical device.   11. An electronic apparatus comprising: the electro-optical device according to claim 6; and a control unit that controls the electro-optical device.

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