JP2005079395A - LAMINATE, MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL DEVICE, ELECTRONIC DEVICE - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique capable of avoiding an adverse effect due to static electricity at the time of peeling when a device is formed using a transfer technique.
A method of manufacturing a laminate according to the present invention includes a first step of forming a release layer (12) on a first substrate (10), and laminating a plurality of films on the release layer (12). A second step of forming the laminate (14), a third step of bonding the second substrate (18) to the formation surface side of the laminate (14) of the first substrate (10), and the first substrate (10). A fourth step of applying energy to the release layer (12) via the substrate to cause peeling at the interface between the release layer (12) and the first substrate (10), and the first substrate (10) as the second substrate. And a fifth step of separating from (18), and is formed when the release layer (12) in the first step is formed to have conductivity and the first substrate (10) is separated in the fifth step. It is characterized in that electric charges are diffused in the release layer (12).
[Selection] Figure 1

Description

  The present invention relates to an improvement in a technique for manufacturing a thin film element and other laminated bodies (devices) using a transfer technique.

  As a method for forming a laminated body such as a semiconductor element, a technique using a transfer technique is known. For example, in Japanese Patent Laid-Open No. 11-74533 (Patent Document 1), a transfer body such as a thin film transistor is formed on a transfer source substrate in advance via a release layer, and then the transfer body is bonded to the transfer destination substrate. In addition, a technique is disclosed in which a transfer target is transferred to a transfer destination substrate by causing the release layer to be irradiated with light or the like to cause peeling. According to this method, a desired electronic device is manufactured by forming a plurality of types of thin film elements and thin film circuits having different manufacturing conditions on the transfer source substrate under optimum conditions, and then moving them to the transfer destination substrate. be able to.

JP-A-11-74533

In the process using the transfer technique described above, static electricity is generated when the transfer target is peeled from the transfer source substrate, and this static charge may cause problems such as destruction of the transfer target and deterioration of characteristics. For example, consider a case where the transfer target is a thin film transistor, and the thin film transistor has a base insulating layer (eg, SiO ₂ film) of about 500 nm below the channel layer. In this case, a relatively low level of static electricity of about 500 V, for example, is generated on the surface of the base insulating layer at the time of peeling, so that a high electric field of 10 MV / cm is generated in the base insulating layer. Such a high electric field is sufficient for the base insulating layer to cause dielectric breakdown.

  Accordingly, an object of the present invention is to provide a technique that can avoid an adverse effect due to static electricity at the time of peeling when a device is formed using a transfer technique.

  The manufacturing method of the laminated body of the 1st aspect of this invention is the 1st process of forming a peeling layer on a 1st board | substrate, and the 2nd process of laminating | stacking a some film | membrane on this peeling layer, and forming a laminated body. And a third step of bonding the second substrate to the formation surface side of the laminate of the first substrate, and applying energy to the release layer through the first substrate, and peeling at the interface between the release layer and the first substrate And a fifth step of separating the first substrate from the second substrate, wherein the release layer in the first step is formed to have conductivity, and the first substrate is formed in the fifth step. It is characterized by diffusing the electric charge generated at the time of separation into the conductive release layer.

  According to such a method, even when charges (charged particles) due to static electricity are generated at the time of peeling, the charges are diffused in the peeling layer, so that the electric charges are locally concentrated and a high electric field is generated at the location. Can be avoided or suppressed. Therefore, it is possible to avoid adverse effects such as element destruction and characteristic deterioration due to static electricity at the time of peeling.

  Here, the “laminated body” in the present invention includes various devices such as a thin film element, a thin film circuit, a fine structure, and a functional thin film. More specifically, as a laminated body, a thin film transistor, a thin film diode, other thin film semiconductor elements, a thin film circuit including the semiconductor element, a photoelectric conversion element used for a solar cell or an image sensor, a switching element, Memory, actuators such as piezoelectric elements, micromirrors (piezo thin film ceramics), magnetic recording media, magneto-optical recording media, recording media such as optical recording media, magnetic recording heads, coils, inductors, thin-film highly permeable materials, and combinations thereof Micro magnetic devices, filters, reflective films, dichroic mirrors, polarizing films, optical thin films, semiconductor thin films, superconducting thin films (eg, YBCO thin films), magnetic thin films, metal multilayer thin films, metal ceramic multilayer thin films, metal semiconductor multilayer thin films, Ceramic semiconductor multilayer thin film, organic thin film and multilayer thin film of other materials It is.

The release layer described above is preferably formed so that the surface resistivity is lower than 1 MΩ / □. By adopting such conditions, it is possible to quickly diffuse the charge and more reliably avoid the adverse effects due to static electricity. The grounds for setting the range of the surface resistivity of the release layer in the present application to 1 MΩ / □ or less are as follows. When the conductor is charged, the charging potential V changes as shown in the following equation depending on the time t.
V = _Vm (1-e- ^{t / τ} )
Here, V _m [volt] represents a charging potential saturation value, and τ [second] represents a relaxation time of charge relaxation by conduction. The charging potential saturation value is expressed by the following equation.
V _m = I _g R
Here, I _g [C / s] represents the amount of charge generated per unit time, and R [Ω] represents the resistance value of the conductor. For conductors, since the value of I _g is about 10 [mu] C / s, R is becomes 10V or less V _m long 1MΩ or less, reduced to the extent that the destruction of the device layer by charging (laminate) is not a few problems It is done.

  The release layer having the surface resistivity described above can be formed using, for example, a semiconductor film. As the semiconductor film, an amorphous silicon film is particularly preferably used.

  In addition, the separation layer is preferably formed using a semiconductor film in which the carrier density is increased by introducing an impurity element. Thereby, it becomes easy to control the surface resistivity to a desired value by the amount of the impurity element introduced.

  In the fifth step, it is also preferable to separate the first substrate while grounding the release layer. Thereby, the electric charge diffused in the release layer can be quickly released.

  The method for manufacturing a laminate according to the second aspect of the present invention includes a first step of forming a release layer on a first substrate, and a second step of forming a laminate by laminating a plurality of films on the release layer. , A third step of bonding the second substrate to the formation surface side of the laminate of the first substrate, and applying energy to the release layer through the first substrate, and peeling the interface between the release layer and the first substrate. And a fifth step of separating the first substrate from the second substrate. The release layer in the first step is formed of a semiconductor, and the carrier of the semiconductor is heated by heating in the fifth step. The conductivity of the release layer is increased by increasing the density, and the charge generated when the first substrate is separated is diffused into the release layer.

  In such a method, when the carrier density (electron and / or hole density) is increased by thermal excitation of the semiconductor, the conductivity of the release layer is increased, and when charge (charged particles) is generated due to static electricity at the time of release. This charge is diffused into the release layer. As a result, it is possible to avoid or suppress the occurrence of a high electric field at the location due to local concentration of charges. Therefore, it is possible to avoid adverse effects such as element destruction and characteristic deterioration due to static electricity at the time of peeling.

The heating in the fifth step described above is preferably performed under the condition that the semiconductor carrier density is 1 × 10 ¹⁴ cm ⁻³ or more. Thereby, the conductivity of the release layer can be ensured sufficiently and sufficiently. The grounds for adopting the above carrier density range are as follows. The sheet resistance R [Ω / □] of the semiconductor film as the release layer is expressed by the following formula.
R [Ω / □] = ρ [Ω · cm] / d [cm]
Here, ρ [Ω · cm] is the resistivity, and d [cm] is the thickness of the semiconductor film. The sheet resistance to be satisfied by the semiconductor film is 1 MΩ or less as in the case of the present invention of the first aspect described above. When silicon is used as the semiconductor film, when the film thickness is 100 nm, a sheet resistance of 1 MΩ / □ or less can be obtained if the resistivity ρ is 10 Ω · cm or less. The carrier concentration necessary to obtain this value is about 1 × 10 ¹⁵ cm ⁻³ . Similarly, when the thickness of the semiconductor film is 1000 nm, the resistivity ρ may be 100 Ω · cm or less, and the carrier concentration necessary for this is 1 × 10 ¹⁴ cm ⁻³ . Therefore, by heating so that the carrier density is 1 × 10 ¹⁴ cm ⁻³ or less, a necessary and sufficient sheet resistance value is obtained when the semiconductor film as the release layer is set to a typical value of 1000 nm or less. Can be realized.

  The manufacturing method of the laminated body of the 3rd aspect of the present invention includes a first step of forming a release layer on a first substrate, a second step of forming a conductive layer on the release layer, and a plurality of steps on the conductive layer. Energy is applied to the release layer via the first substrate, the third step of forming a laminate by laminating the films, the fourth step of bonding the second substrate to the formation surface side of the laminate of the first substrate, and , Including a fifth step of causing peeling at the interface between the release layer and the first substrate, and a sixth step of separating the first substrate from the second substrate, and separating the first substrate in the sixth step. It is characterized by diffusing the electric charge generated at the time to the conductive layer.

  According to such a method, even when charges (charged particles) due to static electricity are generated at the time of peeling, the charges are diffused in the conductive layer, so that the charges are locally concentrated and a high electric field is generated at the location. Can be avoided or suppressed. Therefore, it is possible to avoid adverse effects such as element destruction and characteristic deterioration due to static electricity at the time of peeling.

  The conductive layer described above is preferably formed so that the surface resistivity is lower than 1 MΩ / □. By adopting such conditions, it is possible to quickly diffuse the charge and more reliably avoid the adverse effects due to static electricity. The grounds for setting the effective range of the surface resistivity of the conductive layer to 1 MΩ / □ or less are the same as in the case of the release layer having conductivity described above.

  The conductive layer having the surface resistivity described above can be formed using, for example, a semiconductor film. As the semiconductor film, an amorphous silicon film is particularly preferably used.

  The conductive layer is preferably formed using a semiconductor film in which the carrier density is increased by introducing an impurity element. Thereby, it becomes easy to control the surface resistivity to a desired value by the amount of the impurity element introduced.

  The conductive layer can be formed using a metal film, a conductive oxide film, a conductive polymer film, conductive ceramics, or the like. As a result, the choices of the release film are widened, and it becomes possible to form a release layer according to the convenience of the type of laminate to be transferred.

  As the “metal film”, for example, a film made of aluminum, lithium, titanium, indium, or an alloy containing at least one of them can be used.

As the “conductive oxide film”, for example, an indium oxide film (ITO film), a tin oxide film (SnO ₂ film), a zinc oxide film (ZnO film), or the like can be used.

  As the “conductive polymer film”, for example, a film made of polyacetylene, polyparaphenylene, polypyrrole, or a material obtained by adding impurities thereto can be used.

As the “conductive ceramic film”, for example, a film made of alumina added with titanium carbide particles (Al ₂ O ₃ + TiC), zirconium oxide added with niobium carbide particles (ZrO ₂ + NbC), or the like is used. be able to.

  According to a fourth aspect of the present invention, there is provided a method for manufacturing a laminate, including a first step of forming a release layer on a first substrate, a second step of forming a conductive layer on the release layer, and a plurality of steps on the conductive layer. Energy is applied to the release layer via the first substrate, the third step of forming a laminate by laminating the films, the fourth step of bonding the second substrate to the formation surface side of the laminate of the first substrate, and A fifth step of causing separation at the interface between the release layer and the conductive layer, and a sixth step of separating the joined body of the release layer and the first substrate from the second substrate. In the sixth step, the release layer And the electric charge generated when the bonded body of the first substrate is separated is diffused into the conductive layer. That is, the fourth aspect of the invention is substantially the same as the above-described third aspect of the invention, and differs in the site where peeling occurs.

  Even with this method, it is possible to avoid or suppress the generation of a high electric field at the location due to local concentration of charges, and avoid adverse effects such as element destruction and characteristic deterioration due to static electricity at the time of peeling. It becomes possible.

  The conductive layer described above is preferably formed so that the surface resistivity is lower than 1 MΩ / □. Such a conductive layer may be formed using a semiconductor film, a semiconductor film whose carrier density is increased by introducing an impurity element, a metal film, a conductive oxide film, a conductive polymer film, or a conductive ceramic. Is possible. The grounds for setting the range of the surface resistivity of the conductive layer to 1 MΩ / □ or less are the same as in the case of the release layer having conductivity described above.

  The fifth aspect of the present invention is a laminate manufactured by the above-described manufacturing method, and a release layer remaining in the laminate bears a function of suppressing charging of the laminate. is there. The sixth aspect of the present invention is a laminate manufactured by the above-described manufacturing method, and the conductive layer remaining in the laminate bears a function of suppressing charging of the laminate. Is.

  With such a configuration, the release layer used for preventing static electricity at the time of peeling can be used thereafter, and it is possible to prevent the laminated body from being destroyed or being deteriorated due to charging.

  The seventh aspect of the present invention is an electro-optical device including the above-described laminated body. The term “electro-optical device” as used herein refers to a general display device that includes an electro-optical element that emits light by electrical action or changes the state of light from the outside. The device that emits light by itself and the passage of light from the outside Including those that control For example, as an electro-optical element, a liquid crystal element, an electrophoretic element having a dispersion medium in which electrophoretic particles are dispersed, an EL (electroluminescence) element, and an electron-emitting element that emits light by applying electrons generated by applying an electric field to a light-emitting plate An active matrix display device provided.

  The eighth aspect of the present invention is an electronic apparatus including the above-described laminated body or electro-optical device. Here, the “electronic device” refers to a general device having a circuit board and other elements and having a certain function, and the configuration thereof is not particularly limited. Such electronic devices include, for example, IC cards, mobile phones, video cameras, personal computers, head mounted displays, rear or front projectors, televisions, roll-up televisions, fax machines with display functions, and digital cameras. Finder, portable TV, DSP device, PDA, electronic notebook, electric bulletin board, display for advertisement announcement, and the like.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
Drawing 1 is a figure explaining the manufacturing method of the layered product of a 1st embodiment. In this embodiment, a case where a thin film circuit formed on a first substrate is moved to a second substrate will be described.

  As shown in FIG. 1A, a peeling layer 12 is formed on the first substrate 10, and a laminate 14 is further formed on the peeling layer 12. The laminated body 14 in the illustrated example is a thin film circuit including a plurality of thin film transistors, wirings, electrodes, and the like.

  Here, it is desirable that the first substrate 10 has an appropriate thickness and can withstand a heat resistant material such as quartz glass or soda glass, for example, about 350 ° C. to 1000 ° C. which is a process temperature of a semiconductor device. The first substrate 10 is preferably transparent to the wavelength of the light so that energy can be applied to the release layer by light irradiation in a later step.

Moreover, the peeling layer 12 has a characteristic of causing peeling upon receiving energy application such as light irradiation, and is formed to have conductivity. More specifically, the release layer 12 is preferably formed so that the surface resistivity is lower than 1 MΩ / □. Such a release layer 12 can be formed of, for example, a semiconductor film, a metal film, a conductive oxide film, a conductive polymer film, or a conductive ceramic. In the present embodiment, the release layer 12 is composed of an amorphous silicon film. The amorphous silicon film can be formed by low pressure CVD (LPCVD) or plasma CVD (PECVD) using, for example, monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) as a material gas. In these CVD processes, an appropriate amount of hydrogen (gas component) is contained in the amorphous silicon film. Further, in this embodiment, an amorphous silicon film whose carrier density is increased by introducing an impurity element is used as the peeling layer 12. It becomes easy to control the surface resistivity to a desired value by the amount of the impurity element introduced.

  FIG. 2 is a diagram illustrating an example of a method for forming the release layer 12 in detail. As shown in FIG. 2A, a release layer 12 made of an amorphous silicon film is formed on the first substrate 10. Next, as shown in FIG. 2B, ion implantation (ion implantation) is performed on the separation layer 12 to introduce a donor / acceptor impurity element such as phosphorus / boron into the separation layer 12. If necessary, heat treatment is also performed after ion implantation. After that, a base insulating film 20 as a component of the laminate 14 is formed on the release layer 12 (FIG. 2C), and a thin film transistor or the like is further formed thereon to complete the laminate 14 (FIG. 2 ( D)). This formation method has an advantage that an impurity element is less likely to be contained in the base insulating film 20 as compared with other formation methods described later.

  FIG. 3 is a diagram for explaining in detail another example of the method for forming the release layer 12. As shown in FIG. 3A, a release layer 12 made of an amorphous silicon film is formed on the first substrate. Next, as illustrated in FIG. 3B, a base insulating film 20 as a component of the stacked body 14 is formed over the release layer 12. Next, ions are implanted into the separation layer 12 through the base insulating film 20 to introduce a donor / acceptor type impurity element such as phosphorus / boron into the separation layer 12. If necessary, heat treatment is also performed after ion implantation. After that, a thin film transistor or the like is formed over the base insulating film 20 to complete the stacked body 14 (FIG. 3D). Compared with the above-described forming method (see FIG. 2), this forming method has an advantage that it is easy to control the ion implantation accuracy with respect to the peeling layer 12 and an advantage that ions are easily unevenly distributed on the surface side of the peeling layer 12. .

  Note that in the method for forming the separation layer 12 illustrated in FIG. 3, after performing ion implantation (see FIG. 3C) through the base insulating film 20, the base insulating film 20 is removed by etching or the like, and then A base insulating film may be formed over the release layer 12 anew. In this case, although the number of processes is increased, it is possible to obtain both advantages of the above-described forming methods. Further, the release layer 12 can be formed by mixing impurities in the source gas in the CVD method, and can also be formed by the reactive sputtering method.

  When the release layer 12 and the laminated body 14 are formed in this way, next, as shown in FIG. 1B, the second layer is formed using the adhesive layer 16 on the formation surface side of the laminated body 14 of the first substrate 10. The substrate 18 is bonded. Here, since the second substrate 18 does not need to have heat resistance against the process temperature at the time of manufacturing the semiconductor element, various substrates such as a plus chip substrate can be used in addition to the glass substrate.

  Next, as shown in FIG. 1C, the release layer 12 is irradiated with laser light through the first substrate 10 to cause laser ablation in the release layer 12. Ablation is a state in which a solid material that absorbs irradiated light (a constituent material of the release layer 12) is photochemically or thermally excited, and its surface and internal atomic or molecular bonds are cut and released. In general, all or part of the constituent material of the release layer 12 appears as a phenomenon that causes a phase change such as melting and transpiration (vaporization). In addition, a phase change may result in a fine foamed state, which may reduce the bonding force. In particular, in the present embodiment, the formation conditions of the release layer 12 and the irradiation conditions of the laser beam are set so as to cause peeling at the interface between the release layer 12 and the first substrate 10, and details thereof will be described below. To do.

  FIG. 4 is a diagram for explaining conditions for causing peeling at the interface between the peeling layer 12 and the first substrate 10. This figure shows the phase change after laser light irradiation when an amorphous silicon film deposited by PECVD using monosilane as a material gas is employed as the release layer 12 and the film thickness is 50 nm or 100 nm. An experimental example is shown. In the graph of FIG. 4, the horizontal axis corresponds to the film thickness of the amorphous silicon film, and the vertical axis corresponds to the energy density of the laser beam irradiated. In the experimental example, 5 to 10 atomic% of hydrogen is contained in the amorphous silicon film by setting process conditions in the CVD method. Laser light irradiation is performed using an excimer laser having a wavelength of 308 nm and a pulse width of 20 nsec.

When the thickness of the amorphous silicon film is 50 nm, no phase change occurs when the energy density of the laser beam is about 300 mJ / cm ² or less. When the energy density of the laser beam is in the range of about 300 mJ / cm ² to about 400 mJ / cm ² , the amorphous silicon film melts and crystallizes. Further, when the energy density of the laser beam exceeds about 400 mJ / cm ² , ablation occurs in the amorphous silicon film.

When the film thickness of the amorphous silicon film is 100 nm, no phase change occurs when the energy density of the laser beam is about 300 mJ / cm ² or less. When the energy density of the laser beam is in the range of about 300 mJ / cm ² to about 450 mJ / cm ² , the amorphous silicon film melts and crystallizes. Further, when the energy density of the laser beam exceeds about 450 mJ / cm ² , ablation occurs in the amorphous silicon film.

In the experimental example described above, when the energy density of the laser beam is set to a condition in which ablation occurs in the amorphous silicon film, peeling occurs at the interface between the peeling layer 12 made of the amorphous silicon film and the first substrate 10. This has been confirmed by the present inventors. Specifically, when the thickness of the amorphous silicon film as the release layer 12 is 50 nm, the laser beam has an energy density exceeding 400 mJ / cm ² and does not damage the stacked body 14. It is good to perform irradiation. Similarly, when the thickness of the amorphous silicon film as the release layer 12 is 100 nm, the laser beam irradiation is performed in an energy density exceeding 450 mJ / cm ² and not damaging the stacked body 14. It is good to do.

  Thus, when peeling occurs at the interface between the peeling layer 12 and the first substrate 10, the first substrate 10 is then separated from the second substrate 18 as shown in FIG. It is also preferable to ground the release layer 12 during this separation. At this time, since the release layer 12 is formed to have conductivity, when the first substrate 10 is separated, charges due to static electricity (charged particles) at a place where the first substrate 10 and the release layer 12 are separated. Even when 30 is generated, these charges 30 can be quickly diffused into the release layer 12. Thus, the process of transferring the stacked body 14 to the second substrate 18 side is completed.

  Further, since peeling is caused at the interface between the first substrate 10 and the peeling layer 12, the peeling layer 12 remains on the laminated body 14 side after the transfer process as shown in FIG. By using the conductive release layer 12 remaining on one side of the laminate 14 as it is, it can function as a protective layer that suppresses the charging of the laminate 14. Thereby, the peeling layer used for preventing static electricity at the time of peeling can be utilized thereafter, and it can be avoided that the laminate is destroyed or charged due to charging. In addition, when the peeling layer 12 as such a protective layer is unnecessary, you may remove the peeling layer 12 by etching etc. suitably.

  As described above, in this embodiment, even when the charge 30 due to static electricity is generated during the separation of the first substrate 10, the charge 30 can be diffused into the release layer 14. Therefore, the charge 30 is locally concentrated. Thus, it is possible to avoid or suppress the occurrence of a high electric field at the location. Therefore, it is possible to avoid adverse effects such as destruction of the laminate 14 and characteristic deterioration due to static electricity.

(Second Embodiment)
The manufacturing method of the second embodiment is basically the same as the manufacturing method of the first embodiment described above. When the first substrate is separated from the second substrate, the peeling layer formed of a semiconductor is applied. The difference is in the heating. By this heating, the carrier density of the semiconductor is increased to increase the conductivity of the release layer, and the electric charge generated when the first substrate is separated is diffused in the release layer having the improved conductivity. Hereinafter, the description will be made mainly focusing on the differences.

In this embodiment, the peeling layer 12 is formed of a semiconductor such as amorphous silicon (see FIG. 1A). The amorphous silicon film can be formed by low pressure CVD (LPCVD) or plasma CVD (PECVD) using, for example, monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) as a material gas. In these CVD processes, moderate hydrogen) (gas component) is contained in the amorphous silicon film. In the present embodiment, in principle, it is not necessary for the semiconductor constituting the peeling layer 12 to be introduced with an impurity element.

  After the release layer 12 and the laminate 14 are formed on the first substrate 10, the second substrate 18 is bonded to the formation surface side of the laminate 14 of the first substrate 10 using the adhesive layer 16 (FIG. 1B). reference). Next, the release layer 12 is irradiated with laser light through the first substrate 10 to cause laser ablation in the release layer 12 (see FIG. 1C). The details of each process are the same as those in the first embodiment, and the description is omitted here.

After causing peeling at the interface between the peeling layer 12 and the first substrate 10, the first substrate 10 is separated from the second substrate 18 (see FIG. 1D). At this time, in this embodiment, the conductivity of the release layer 12 is increased by increasing the carrier density of the semiconductor constituting the release layer 12 by heating. More specifically, the heating in this step is preferably performed under the condition that the carrier density of the semiconductor constituting the peeling layer 12 is 1 × 10 ¹⁴ cm ⁻³ or more. In this embodiment, since the release layer 12 is made of amorphous silicon, necessary and sufficient conductivity can be ensured by heating the release layer 12 to at least 180 ° C. or higher. As a result, it is possible to diffuse the charge generated when the first substrate 10 is separated into the release layer 12. Note that it is also preferable to ground the release layer 12 during the separation.

  As described above, in the second embodiment, the release layer 12 is formed of a semiconductor, and the semiconductor is heated to increase the carrier density (electron and / or hole density), thereby increasing the conductivity of the release layer 12. It is increasing. When charges (charged particles) due to static electricity are generated when the first substrate 10 is separated, the charges are diffused into the release layer 12. As a result, it is possible to avoid or suppress the occurrence of a high electric field at the location due to local concentration of charges. Therefore, it is possible to avoid adverse effects such as element destruction and characteristic deterioration due to static electricity at the time of peeling.

  In principle, the separation layer 12 in the second embodiment does not require introduction of an impurity element and can use an intrinsic semiconductor, but an impurity semiconductor into which an impurity element is introduced may be used. In this case, there is an advantage that the temperature setting at the time of heating can be further reduced.

(Third embodiment)
In the first and second embodiments described above, the release layer is made conductive. However, a conductive layer for diffusing charges generated by static electricity is provided separately from the release layer. Also good. Details of this case will be described below. In addition, about the content which overlaps with each embodiment mentioned above, description is abbreviate | omitted suitably.

  Drawing 5 is a figure explaining the manufacturing method of the layered product of a 3rd embodiment. Also in this embodiment, the case where the thin film circuit formed on the first substrate is moved to the second substrate will be described.

  As shown in FIG. 5A, a release layer 12a is formed over the first substrate 10. Suitable conditions for the first substrate 10 are the same as those in the first embodiment. In the present embodiment, the release layer 12a does not necessarily have conductivity and does not need to be configured by a semiconductor. Such a release layer 12a can be formed of various materials such as a metal film, a ferromagnetic film, a polymer film, or ceramics in addition to the semiconductor film. In this embodiment, the peeling layer 12a is formed from amorphous silicon. The method for forming the release layer 12a made of amorphous silicon is basically the same as that in the first embodiment, but the process of introducing an impurity element can be omitted.

  Further, as shown in FIG. 5A, a conductive layer 22 is formed over the peeling layer 12a. The conductive layer 22 is preferably formed so that the surface resistivity is lower than 1 MΩ / □. The conductive layer 22 having such a surface resistivity can be formed using, for example, a metal film. As the metal film, for example, a film made of aluminum, lithium, titanium, indium, or an alloy containing at least one of these can be used. The conductive layer 22 may be a semiconductor film such as an amorphous silicon film or a film in which an impurity element is introduced to increase the carrier density. The conductive layer 22 can also be formed of a conductive oxide film, a conductive polymer film, or a conductive ceramic.

As the conductive oxide film described above, for example, an indium oxide film (ITO film), a tin oxide film (SnO ₂ film), a zinc oxide film (ZnO film), or the like can be used. Since the transparent conductive layer 22 can be obtained by using these transparent conductive films, for example, when an organic EL display device is configured including the stacked body 14, light is transmitted to the conductive layer 22 side. It is possible to adopt a structure for discharging (bottom emission type structure). That is, there is an advantage that the selection range of the device structure is widened.

In addition, as the conductive polymer film, for example, polyacetylene, polyparaphenylene, polypyrrole, or a film formed by adding impurities to these can be used. As the conductive ceramic film, for example, a film made of alumina added with titanium carbide particles (Al ₂ O ₃ + TiC), zirconium oxide added with niobium carbide particles (ZrO ₂ + NbC), or the like can be used. .

  Furthermore, as illustrated in FIG. 5A, the stacked body 14 is formed over the conductive layer 22. The laminated body 14 in the illustrated example is a semiconductor thin film circuit including a plurality of thin film transistors, wirings, electrodes, and the like.

  Next, as illustrated in FIG. 5B, the second substrate 18 is bonded to the formation surface side of the stacked body 14 of the first substrate 10 using the adhesive layer 16. Suitable conditions for the second substrate 18 are the same as those in the first embodiment.

  Next, as shown in FIG. 5C, the release layer 12a is irradiated with laser light through the first substrate 10 to cause laser ablation in the release layer 12a. Also in this embodiment, the formation conditions of the release layer 12a, the irradiation conditions of the laser beam, and the like are set so that the interface between the release layer 12a and the first substrate 10 is peeled off.

  Next, as shown in FIG. 5D, the first substrate 10 is separated from the second substrate 18. It is also preferable to ground the conductive layer 22 during this separation. At this time, since the conductive layer 22 is formed so as to be in contact with the release layer 12 a, when the first substrate 10 is separated, a charge (charging) is caused by static electricity at a location where the first substrate 10 and the release layer 12 are separated. Even when (particles) 30 are generated, these charges 30 can be quickly diffused into the conductive layer 22. Thereby, the process of transferring the laminated body 14 to the second substrate 18 side is completed.

  Further, since peeling is caused at the interface between the first substrate 10 and the peeling layer 12, the conductive layer 22 remains on one side of the stacked body 14 as shown in FIG. The conductive layer 22 can be used as it is to function as a protective layer that suppresses the charging of the laminate 14. Thereby, the peeling layer used for preventing static electricity at the time of peeling can be utilized thereafter, and it can be avoided that the laminate is destroyed or charged due to charging. Note that in the case where the conductive layer 22 as such a protective layer is unnecessary, the peeling layer 12a and the conductive layer 22 may be appropriately removed by etching or the like.

  As described above, in the third embodiment, even when charges (charged particles) due to static electricity are generated at the time of peeling, the charges are diffused into the conductive layer 22, so that the charges are locally concentrated and the portion concerned. It is possible to avoid or suppress the generation of a high electric field. Therefore, it is possible to avoid adverse effects such as element destruction and characteristic deterioration due to static electricity at the time of peeling.

(Fourth embodiment)
In the third embodiment described above, peeling occurs at the interface between the first substrate 10 and the peeling layer 12a. However, peeling may occur at the interface between the peeling layer 12a and the conductive layer 22. . Details of this case will be described below. In addition, about the content which overlaps with 3rd Embodiment mentioned above, description is abbreviate | omitted suitably.

  FIG. 6 is a diagram illustrating a method for manufacturing the laminate according to the fourth embodiment. Also in this embodiment, the case where the thin film circuit formed on the first substrate is moved to the second substrate will be described.

  As shown in FIG. 6A, a release layer 12a is formed over the first substrate 10, and a conductive layer 22 is formed over the release layer 12a. Further, as illustrated in FIG. 6A, the stacked body 14 is formed over the conductive layer 22. Next, as illustrated in FIG. 6B, the second substrate 18 is bonded to the formation surface side of the stacked body 14 of the first substrate 10 using the adhesive layer 16.

Next, as illustrated in FIG. 6C, the release layer 12 a is irradiated with laser light through the first substrate 10. In the present embodiment, the formation conditions of the release layer 12a, the irradiation conditions of the laser beam, and the like are set so that the interface between the release layer 12a and the conductive layer 22 is peeled off. Specifically, in the above-described experimental example (see FIG. 4), by setting the energy density of the laser light to a condition in which no ablation occurs in the amorphous silicon film, the peeling layer 12a made of the amorphous silicon film Peeling can be caused at the interface with the upper conductive layer 22. For example, when the thickness of the amorphous silicon film as the separation layer 12a is 50 nm, laser light irradiation may be performed with an energy density not exceeding 400 mJ / cm ² . Similarly, when the thickness of the amorphous silicon film as the separation layer 12a is 100 nm, laser light irradiation may be performed with an energy density not exceeding 450 mJ / cm ² .

  Next, as shown in FIG. 6D, the first substrate 10 and the release layer 12 a are separated from the second substrate 18. It is also preferable to ground the conductive layer 22 during this separation. Thereby, the process of transferring the laminated body 14 to the second substrate 18 side is completed.

  Further, as shown in FIG. 6D, since the conductive layer 22 remains on one side of the stacked body 14, the conductive layer 22 is used as it is to function as a protective layer that suppresses charging of the stacked body 14. Can do. Thereby, the peeling layer used for preventing static electricity at the time of peeling can be utilized thereafter, and it can be avoided that the laminate is destroyed or charged due to charging. Note that in the case where the conductive layer 22 as such a protective layer is unnecessary, the conductive layer 22 may be appropriately removed by etching or the like.

  Thus, even with the manufacturing method of the fourth embodiment, it is possible to avoid adverse effects such as element destruction and characteristic deterioration due to static electricity during peeling.

(Fifth embodiment)
The laminated body and the manufacturing method thereof according to each embodiment described above can be applied to various electro-optical devices (display devices) such as an organic EL display device, a liquid crystal display device, and an electrophoretic display device. A configuration example of an organic EL display device configured using the circuit board of the present embodiment will be described below.

  FIG. 7 is a diagram illustrating a configuration example of the electro-optical device. The electro-optical device (display device) 200 according to this embodiment includes a circuit substrate (active active) in which pixel circuits 202 each including two thin film transistors, a capacitor, and a light emitting element are arranged in a matrix in a pixel region 201 on the substrate. A matrix substrate) and drivers 203 and 204 for supplying drive signals to the pixel circuit 202. The driver 203 supplies a drive signal to each pixel region via the light emission control line Vgp. The driver 204 supplies a drive signal to each pixel region via the data line Idata and the power supply line Vdd. Each thin film transistor constituting the pixel circuit and each thin film transistor constituting the drivers 203 and 204 are formed by applying the manufacturing method of the above-described embodiment. Although an organic EL display device has been described as an example of an electro-optical device, various electro-optical devices such as a liquid crystal display device can be manufactured in the same manner.

  Note that the above-described pixel circuit configuring the pixel region is an example, and the present invention is not limited to this configuration. Further, an integrated circuit included in each of the drivers 203 and 204 may be configured using the semiconductor device according to the present invention. In FIG. 7, an electro-optical device using an organic EL or the like is shown as an example of a self-luminous electro-optical element, but an electro-optical device using another self-luminous electro-optical element, a liquid crystal element, or the like. The present invention can also be applied to an electro-optical device using the non-self-luminous electro-optical element.

(Sixth embodiment)
8 and 9 are diagrams illustrating examples of electronic apparatuses to which the above-described electro-optical device can be applied. FIG. 8A shows an application example to a cellular phone. The cellular phone 230 includes an antenna portion 231, an audio output portion 232, an audio input portion 233, an operation portion 234, and the electro-optical device 200 of the present invention. . As described above, the electro-optical device according to the invention can be used as a display unit.

  FIG. 8B shows an application example to a video camera. The video camera 240 includes an image receiving unit 241, an operation unit 242, an audio input unit 243, and the electro-optical device 200 of the present invention.

  FIG. 8C shows an application example to a portable personal computer (so-called PDA). The computer 250 includes a camera unit 251, an operation unit 252, and the electro-optical device 200 according to the present invention.

  FIG. 8D shows an application example to a head mounted display. The head mounted display 260 includes a band 261, an optical system storage unit 262, and the electro-optical device 200 according to the present invention.

  FIG. 8E shows an application example to a rear projector. The projector 270 includes a housing 271, a light source 272, a composite optical system 273, mirrors 274 and 275, a screen 276, and the electro-optical device 200 according to the invention. It has.

  FIG. 8F shows an application example to a front type projector. The projector 280 is provided with an optical system 281 and the electro-optical device 200 according to the present invention in a housing 282 so that an image can be displayed on a screen 283. .

  FIG. 9A shows an application example to a television, and the television 300 includes the electro-optical device 200 according to the present invention. The electro-optical device according to the present invention can be similarly applied to a monitor device used for a personal computer or the like. FIG. 9B shows an application example to a roll-up television, and the roll-up television 310 includes the electro-optical device 200 according to the present invention.

  The electro-optical device according to the invention is not limited to the above-described example, and can be applied to any electronic apparatus to which a display device such as an organic EL display device or a liquid crystal display device can be applied. For example, in addition to these, it can also be used for a fax machine with a display function, a finder for a digital camera, a portable TV, an electronic notebook, an electric bulletin board, a display for advertisements, and the like.

  The present invention is not limited to the contents of the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention. For example, in the above-described embodiment, the semiconductor thin film circuit has been mainly described as the laminated body according to the present invention. However, various devices such as a fine structure and a functional thin film can be adopted as the laminated body.

  Further, in each of the above-described embodiments, the case where the present invention is applied to a so-called one-time transfer process in which the stacked body formed on the first substrate is transferred onto the second substrate to complete device formation has been described. However, the same applies to the so-called two-time transfer process in which the laminate formed on the first substrate is transferred onto the temporary substrate, and then the laminate is further transferred onto the second substrate onto the temporary substrate. Is possible.

It is a figure explaining the manufacturing method of the laminated body of 1st Embodiment. It is a figure explaining in detail about an example of the formation method of a peeling layer. It is a figure explaining in detail about the other example of the formation method of a peeling layer. It is a figure explaining the conditions for producing peeling in the interface of a peeling layer and a 1st board | substrate. It is a figure explaining the manufacturing method of the laminated body of 3rd Embodiment. It is a figure explaining the manufacturing method of the laminated body of 4th Embodiment. It is a figure which shows the structural example of an electro-optical apparatus. It is a figure which shows the example of the electronic device which can apply an electro-optical apparatus. It is a figure which shows the example of the electronic device which can apply an electro-optical apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... 1st board | substrate, 12 and 12a ... Release layer, 14 ... Laminated body, 16 ... Adhesive layer, 18 ... 2nd board | substrate, 20 ... Base insulating film, 22 ... Conductive layer, 30 ... Electric charge

Claims (19)

A first step of forming a release layer on the first substrate;
A second step of laminating a plurality of films on the release layer to form a laminate;
A third step of bonding a second substrate to the formation surface side of the laminate of the first substrate;
A fourth step of applying energy to the release layer through the first substrate to cause peeling at an interface between the release layer and the first substrate;
Separating the first substrate from the second substrate, and
The release layer in the first step is formed so as to have conductivity, and a charge generated when the first substrate is separated in the fifth step is diffused in the release layer. Manufacturing method.   The said peeling layer is a manufacturing method of the laminated body of Claim 1 formed so that surface resistivity may become lower than 1 Mohm / square.   The method for manufacturing a laminate according to claim 2, wherein the release layer includes a semiconductor film.   The method for manufacturing a laminate according to claim 2, wherein the release layer includes a semiconductor film whose carrier density is increased by introducing an impurity element.   The method for manufacturing a laminate according to claim 1, wherein the first substrate is separated while grounding the release layer in the fifth step. A first step of forming a release layer on the first substrate;
A second step of laminating a plurality of films on the release layer to form a laminate;
A third step of bonding a second substrate to the formation surface side of the laminate of the first substrate;
A fourth step of applying energy to the release layer through the first substrate to cause peeling at an interface between the release layer and the first substrate;
Separating the first substrate from the second substrate, and
When separating the first substrate by forming the release layer in the first step with a semiconductor and increasing the conductivity of the release layer by increasing the carrier density of the semiconductor by heating in the fifth step. A method for producing a laminate, wherein the generated charge is diffused into the release layer. The said heating in a said 5th process is a manufacturing method of the laminated body of Claim 6 performed on the conditions from which the carrier density of the said semiconductor becomes 1 * 10 < ¹⁴ > cm < ^-3 > or more. A first step of forming a release layer on the first substrate;
A second step of forming a conductive layer on the release layer;
A third step of laminating a plurality of films on the conductive layer to form a laminate;
A fourth step of bonding a second substrate to the formation surface side of the laminate of the first substrate;
A fifth step of applying energy to the release layer through the first substrate to cause peeling at an interface between the release layer and the first substrate;
A sixth step of separating the first substrate from the second substrate,
A method of manufacturing a laminate, wherein charges generated when the first substrate is separated in the sixth step are diffused into the conductive layer.   The method for manufacturing a laminate according to claim 8, wherein the conductive layer includes a semiconductor film.   The method for manufacturing a stacked body according to claim 8, wherein the conductive layer includes a semiconductor film in which a carrier density is increased by introducing an impurity element.   The method for manufacturing a laminate according to claim 8, wherein the conductive layer includes a metal film.   The method for manufacturing a laminate according to claim 8, wherein the conductive layer includes a conductive oxide film.   The method for manufacturing a laminate according to claim 8, wherein the conductive layer includes a conductive ceramic film.   The method for manufacturing a laminate according to claim 8, wherein the conductive layer includes a conductive polymer film. A first step of forming a release layer on the first substrate;
A second step of forming a conductive layer on the release layer;
A third step of laminating a plurality of films on the conductive layer to form a laminate;
A fourth step of bonding a second substrate to the formation surface side of the laminate of the first substrate;
A fifth step of applying energy to the release layer through the first substrate to cause peeling at an interface between the release layer and the conductive layer;
A sixth step of separating the joined body of the release layer and the first substrate from the second substrate,
A method for manufacturing a laminate, comprising: diffusing charges generated when separating a bonded body of the release layer and the first substrate in the sixth step into the conductive layer. A laminate manufactured by the manufacturing method according to claim 1,
The laminate, wherein the release layer remaining in the laminate has a function of suppressing charging of the laminate. A laminate produced by the production method according to any one of claims 8 to 14,
The laminate, wherein the conductive layer remaining in the laminate has a function of suppressing charging of the laminate.   An electro-optical device configured to include a laminate manufactured by the laminate manufacturing method according to claim 1.   The electronic device comprised including the laminated body manufactured by the manufacturing method of the laminated body in any one of Claims 1 thru | or 15.