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JP2005012085A - Electrode structure of semiconductor module - Google Patents

Electrode structure of semiconductor module Download PDF

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Publication number
JP2005012085A
JP2005012085A JP2003176518A JP2003176518A JP2005012085A JP 2005012085 A JP2005012085 A JP 2005012085A JP 2003176518 A JP2003176518 A JP 2003176518A JP 2003176518 A JP2003176518 A JP 2003176518A JP 2005012085 A JP2005012085 A JP 2005012085A
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Prior art keywords
electrode
semiconductor element
semiconductor module
heat
semiconductor
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Hidetoshi Kusumi
秀年 久須美
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Toyota Motor Corp
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Toyota Motor Corp
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Abstract

【課題】従来の半導体モジュールでは、半導体素子が実装されるリードフレームのダイパッド部の厚みをリード部よりも厚く形成し、該ダイパッド部にヒートシンクとしての機能を持たせる技術が考案されているが、ダイパッド部をあまり厚くすることができず、充分な放熱性を確保することが困難な場合があった。
【解決手段】リードフレーム２上に半導体素子３を実装し、半導体素子３上に電極５を接続して構成したモールド型の半導体モジュール１において、前記電極５は、その一端部５１を折り曲げて複数層に重ね合わせた状態で半導体素子３に接続される。
【選択図】 図２In a conventional semiconductor module, a technique has been devised in which a die pad part of a lead frame on which a semiconductor element is mounted is formed thicker than a lead part, and the die pad part has a function as a heat sink. The die pad portion cannot be made too thick, and it may be difficult to ensure sufficient heat dissipation.
In a mold type semiconductor module 1 in which a semiconductor element 3 is mounted on a lead frame 2 and an electrode 5 is connected to the semiconductor element 3, the electrode 5 has a plurality of end portions 51 bent. It is connected to the semiconductor element 3 in a state of being superimposed on the layer.
[Selection] Figure 2

Description

【０００１】
【発明の属する技術分野】
本発明は、リードフレーム上に半導体素子を実装し、該半導体素子上に電極を接続して構成したモールド型の半導体モジュールの電極構造に関する。
【０００２】
【従来の技術】
従来から、リードフレーム上に半導体素子を実装し、該半導体素子上に電極を接続するとともに、半導体素子及びその周域を封止樹脂にてモールドして構成したモールド型の半導体モジュールが知られている。
モールド型の半導体モジュールのうち、特にインバータ用モジュールなどのパワーモジュールでは、動作時に発熱するため放熱性を確保することが重要である。
このような、発熱性の半導体モジュールの放熱性を高めるため、半導体素子が実装されるリードフレームのダイパッド部の厚みをリード部よりも厚く形成し、該ダイパッド部にヒートシンクとしての機能を備えさせる技術が考案されている。例えば、特許文献１に記載されている如くである。
【０００３】
【特許文献１】
特開平６−２４４３３４号公報
【０００４】
【発明が解決しようとする課題】
前述のように、ダイパッド部がリード部よりも厚くなるようにリードフレームを形成する場合、ダイパッド部とリード部との板厚の差が大きすぎると、両者間に加工度合の差が生じて、薄板部となるリード部に波打ちが発生したり、ダイパッド部とリード部との境界にくびれ等の欠陥が発生したりするため、ダイパッド部をあまり厚くすることができなかった。
従って、ダイパッド部のヒートシンクとしての容量が制限され、充分な放熱性を確保することが困難な場合があった。
【０００５】
また、半導体素子に接続される電極は、半導体素子とリードフレームのリード部とを接続しているが、ボンディングワイヤにて構成されていたためヒートマスが殆どなく、放熱性向上の効果を有していなかった。
そこで、本発明においては、従来は放熱性が何ら考慮されていなかった、半導体素子に接続されている電極を用いて、半導体モジュールの放熱性を充分に確保することを可能とする半導体モジュールの電極構造を提供するものである。
【０００６】
【課題を解決するための手段】
上記課題を解決する本発明の半導体モジュールの電極構造は、以下の特徴を有する。
即ち、請求項１においては、リードフレーム上に半導体素子を実装し、半導体素子上に電極を接続して構成したモールド型の半導体モジュールにおいて、
前記電極は、板状に形成され、その一端部を折り曲げて複数層に重ね合わせた状態で半導体素子に面接続される。
これにより、電極の半導体素子との接続部のヒートマスを大きくすることができて、該接続部にヒートシンクとしての機能を備えさせることができ、半導体素子で発生した熱の放熱性を高めることができる。
また、電極と半導体素子との接合面積が増加して、両者の密着性を確保することができ、伝熱効率の向上が図れる。
そして、電極の半導体素子との接続部を複数層に重ね合わせることで得た、ヒートマスの効果を十分に発揮することが可能となる。
【０００７】
また、請求項２においては、前記電極の半導体素子との接続部は、その厚みが２．０ｍｍ以下である。
これにより、ヒートマスの効果の増加なしに、半導体モジュールのサイズアップや生産性の悪化等の悪影響が出ることを防止でき、効果的にヒートマスの効果を得ることができる。
【０００８】
また、請求項３においては、前記電極の表面にははんだめっきが施され、該電極の一端部と半導体素子とは、はんだ接合される。
これにより、複数層に重ね合わせられた電極の一端部の各層が、互いに広範囲にわたって接続されることとなり、半導体素子と電極の一端部との接合部に流れる大電流による発熱を抑えることができる。
また、この一端部の各層の接合を、電極の一端部と半導体素子とをはんだ接合する際に同時に行うことが可能であり、接合工程を簡素化することができる。
【０００９】
【発明の実施の形態】
次に、本発明の実施の形態を添付の図面を用いて説明する。
【００１０】
本発明にかかる半導体モジュールの電極構造の実施形態について説明する。
図１、図２に示すように、半導体モジュール１は、ダイパッド部２ａとリード部２ｂ・２ｃ・２ｄとで構成されるリードフレーム２と、リードフレーム２のダイパッド部２ａ上にはんだ４を介して実装される半導体素子３と、半導体素子３とリードフレーム２のリード部２ｂとを接続する電極５と、半導体素子３とリードフレーム２のリード部２ｃとを接続するボンディングワイヤ７と、半導体素子３及びその周域（電極５やリードフレーム２のダイパッド部２ａ等）をモールドする封止樹脂６とで構成されている。
【００１１】
半導体素子３の上面には、ソース電極３ａ及びゲート電極３ｂが形成されており、板状に形成される電極５は、その一端部５１がはんだ４を介してソース電極３ａと接続され、他端部５２がリードフレーム２のリード部２ｂと接続されている。
また、ボンディングワイヤ７は半導体素子３のゲート電極３ｂとリード部２ｃとを接続している。
さらに、ダイパッド部２ａとリード部２ｄとは一体的に形成されており、ドレイン電極に形成される半導体素子３の下面をダイパッド部２ａにはんだ接合することで、該ドレイン電極とリード部２ｄとが接続されている。
【００１２】
リードフレーム２のリード部２ｂ・２ｃ・２ｄとダイパッド部２ａとは、リード部２ｂ・２ｃ・２ｄが高位置となるように段差を有して配置されており、半導体素子３とリード部２ｂとを接続する電極５も、他端部５２が一端部５１よりも高位置に位置するように、途中部で屈曲されている。
【００１３】
また、電極５の一端部５１は、途中で折り曲げられて、複数層に重ね合わせた状態で半導体素子３に接続されている。
例えば、図２における一端部５１は、途中で屈曲されて、下方に位置する下層５１ａと上方に位置する上層５１ｂとを重ね合わせた状態で、下層５１ａがはんだ４を介して半導体素子３と面接続されている。
【００１４】
電極５は、その表面にはんだめっきが施されている。
従って、電極５の一端部５１と半導体素子３のソース電極３ａとをはんだ接合する際に、電極５表面にめっきされたはんだが溶融して、重ね合わせられた状態の下層５１ａの上面と上層５１ｂの下面とが接合される。
【００１５】
このように、半導体素子３と接続される電極５の一端部５１を、折り曲げて複数層に重ね合わせることで、該一端部５１の厚みが電極５の他部に比べて厚くなる。（例えば、下層５１ａと上層５１ｂの２層を重ね合わせた場合は、他端部５２等の厚さと比べて、２倍の厚さとなる）。
これにより、半導体素子３と接続される電極５の一端部５１のヒートマスを大きくすることができて、該一端部５１にヒートシンクとしての機能を持たせることができ、半導体素子３で発生した熱の放熱性を高めることが可能となる。
【００１６】
また、電極における半導体素子３との接続部のヒートマスを大きくするためには、図３に示す半導体モジュール６０の電極６５のように、電極６５全体の厚みを厚くすることも考えられる。
しかし、電極６５を全体的に厚くすると、一端部６６と他端部６７との段差部分における屈曲部６５ａで生じるＲ形状（円弧形状）部分が大きくなってしまう。
また、モールド型に構成される半導体モジュール１・６０では、モジュール全体のサイズの制限等により、リードフレーム２のリード２ｂ・２ｃ・２ｄと、半導体素子３との距離Ｗ０が小さくしかとれない。
従って、前記屈曲部６５ａで生じるＲ形状部分が大きくなってしまうと、電極６５の一端部６６の半導体素子３と接続される範囲Ｒ０が小さくなってしまう。
【００１７】
つまり、リード２ｃ・２ｄの端部と半導体素子３の端部との間隔が小さいため、電極６５の厚みや屈曲部６５ａのＲ形状部分の影響により、一端部６６と半導体素子３のソース電極３ａとの接合面積を大きく確保することができない。
これにより、半導体素子３から電極６５への伝熱面積が減少することとなって、電極６５の厚みを増したことにより得たヒートマスの効果を十分に発揮することができなくなってしまう。
【００１８】
これに対して、図２に示す半導体モジュール１ように、電極５の一端部５１を途中で屈曲し、複数層に重ね合わせた状態で半導体素子３と接続した場合は、一端部５１と他端部５２との段差部分における屈曲部５ａの下方に、一端部５１の下層５１ａの端部を配置することができる。
さらに、下層５１ａの端部を、屈曲部５ａよりも他端部５２側にまで延出することも可能である。
下層５１ａの端部はＲ形状ではなく角張った形状に形成されているので、半導体素子３との接合面積を広く確保することが可能であり、半導体素子３から電極５への伝熱効率が向上することができる。
【００１９】
このように、電極５の屈曲部５ａの下方若しくはその他端部５側にまで下層５１ａを配置することで、電極５の一端部５１と半導体素子３とが接続される範囲Ｒ１を大きくとることができる。
これにより、電極５の一端部５１と半導体素子３との接合面積が増加して、両者の密着性を確保することができ、伝熱効率の向上が図れる。
そして、電極５の一端部５１を下層５１ａと上層５１ｂの複数層に重ね合わせることで得た、ヒートマスの効果を十分に発揮することが可能となる。
【００２０】
また、電極５の一端部５１と半導体素子３との接合面積を大きく確保することに加えて、一端部５１の下層５１ａと上層５１ｂとが、電極５表面にめっきされたはんだにより広範囲に接続されているので、半導体素子３と一端部５１との接合部に流れる大電流による発熱を抑えることもできる。
【００２１】
また、前記電極５は、下層５１ａと上層５１ｂとを重ね合わせて構成した一端部５１の厚みｔを２．０ｍｍ程度以下の厚みとしているが、これは以下の理由による。
【００２２】
即ち、電極５の半導体素子３との接続部である一端部５１を厚くしていくと、それに従って前述のヒートマスの効果が増加すると考えられるが、一端部５１の厚みを厚くすることには、半導体モジュール１のサイズや生産性に与える影響（サイズが大きくなったり、生産性が悪くなったりすること）により、限界がある。
【００２３】
そこで、一端部５１の板厚に対する半導体素子３の放熱効果特性を測定し、ヒートマスの効果と半導体モジュール１のサイズや生産性に与える影響とを考慮した、好適な一端部５１の板厚を求めた。
図４に、一端部５１の板厚に対する半導体素子３の電極５の一端部５１の板厚に対する半導体素子３の温度上昇値の測定結果を示す。
【００２４】
図４によれば、一端部５１の板厚が薄いときには半導体素子３の温度上昇値は高く、一端部５１の板厚が厚くなるに従って、半導体素子３の温度上昇値が低くなるという結果が得られた。
なお、半導体素子３の温度上昇値が低い程、放熱効果が大きいことを示している。
【００２５】
しかし、一端部５１の板厚が厚くなるにつれて、半導体素子３の温度上昇値の変化度合いは減少していき、一端部５１の板厚が１．５ｍｍ程度になると変化度合いはかなり小さくなり、２．０ｍｍ程度にまでなると半導体素子３の温度上昇値の変化は殆ど見られず、ほぼ一定となる。
これは、一端部５１の板厚が１．５ｍｍを超えると、さらには２．０ｍｍまで達すると、一端部５１におけるヒートマスの効果の増加が殆ど無くなることを示している。
【００２６】
このように、一端部５１の板厚が１．５ｍｍを超えるとヒートマスの効果は殆ど増加せず、特に２．０ｍｍを超えるとヒートマスの効果は増加しないが、半導体モジュール１のサイズや生産性に及ぼす悪影響は板厚が増加すると増すため、本発明では、モールドタイプの半導体モジュール１に好適な一端部５１の板厚を、ヒートマスの効果の増加が見られる２．０ｍｍ以下としている。
これにより、ヒートマスの効果の増加なしに、半導体モジュールのサイズアップや生産性の悪化等の悪影響が出ることを防止でき、効果的にヒートマスの効果を得ることができる。
【００２７】
なお、ヒートマスの効果の増加が見られなくなる一端部５１の板厚は、半導体モジュール１に流れる電流量によっても若干異なるため、一端部５１の板厚の最大値を、半導体モジュール１に流れる電流量に応じて２．０ｍｍ〜１．５ｍｍの範囲で適宜決定することが可能である。
即ち、電流量がさほど多くなくて、板厚が１．５ｍｍを超えるとヒートマス効果の増加が見られなくなる場合には、一端部５１の板厚を１．５ｍｍ以下とすることもできる。
【００２８】
また、半導体素子３のゲート電極３ｂとリード部２ｃとの接続は、本実施形態ではボンディングワイヤ７にて行っているが、ソース電極３ａとリード部２ｂとを接続する板状部材の電極５と同様の部材にて接続することも可能である。
【００２９】
【発明の効果】
以上のように、本発明によれば、
電極の半導体素子との接続部のヒートマスを大きくすることができて、該接続部にヒートシンクとしての機能を持たせることができるとともに、ヒートマスの効果を十分に発揮することができ、半導体素子で発生した熱の放熱性を高めることができる。また、効果的にヒートマスの効果を得ることができるとともに、半導体素子と電極との接合部の発熱を抑えることができる。
【図面の簡単な説明】
【図１】本発明の電極構造を備える半導体モジュールを示す平面図である。
【図２】同じく半導体モジュールのモールド内部を示す側面断面図である。
【図３】電極自体の厚みを厚く形成した半導体モジュールのモールド内部を示す側面断面図である。
【図４】電極板厚と半導体素子の放熱効果特性との関係を示す図である。
【符号の説明】
１ 半導体モジュール
２ リードフレーム
２ａ ダイパッド部
２ｂ・２ｃ・２ｄ リード部
３ 半導体素子
５ 電極
５１ 一端部
５２ 他端部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electrode structure of a mold type semiconductor module configured by mounting a semiconductor element on a lead frame and connecting an electrode on the semiconductor element.
[0002]
[Prior art]
Conventionally, there has been known a mold type semiconductor module in which a semiconductor element is mounted on a lead frame, an electrode is connected to the semiconductor element, and the semiconductor element and its peripheral area are molded with a sealing resin. Yes.
Among power semiconductor modules, especially power modules such as inverter modules, it is important to ensure heat dissipation because they generate heat during operation.
In order to enhance the heat dissipation of such a heat-generating semiconductor module, the die pad part of the lead frame on which the semiconductor element is mounted is formed thicker than the lead part, and the die pad part has a function as a heat sink. Has been devised. For example, it is as described in Patent Document 1.
[0003]
[Patent Document 1]
JP-A-6-244334
[Problems to be solved by the invention]
As described above, when the lead frame is formed so that the die pad portion is thicker than the lead portion, if the difference in plate thickness between the die pad portion and the lead portion is too large, a difference in processing degree occurs between the two, Since the undulation is generated in the lead portion which is a thin plate portion, or a defect such as a constriction is generated at the boundary between the die pad portion and the lead portion, the die pad portion cannot be made too thick.
Therefore, the capacity of the die pad portion as a heat sink is limited, and it may be difficult to ensure sufficient heat dissipation.
[0005]
In addition, the electrode connected to the semiconductor element connects the semiconductor element and the lead portion of the lead frame. However, since the electrode is composed of bonding wires, there is almost no heat mass and there is no effect of improving heat dissipation. It was.
Therefore, in the present invention, the electrode of the semiconductor module that can sufficiently secure the heat dissipation of the semiconductor module by using the electrode connected to the semiconductor element, in which heat dissipation is not considered in the past. Provide structure.
[0006]
[Means for Solving the Problems]
The electrode structure of the semiconductor module of the present invention that solves the above problems has the following characteristics.
That is, in claim 1, in a mold type semiconductor module configured by mounting a semiconductor element on a lead frame and connecting an electrode on the semiconductor element,
The electrode is formed in a plate shape and is surface-connected to the semiconductor element in a state where one end of the electrode is bent and superimposed on a plurality of layers.
Thereby, the heat mass of the connection part with the semiconductor element of an electrode can be enlarged, the function as a heat sink can be provided in this connection part, and the heat dissipation of the heat which generate | occur | produced in the semiconductor element can be improved. .
Further, the bonding area between the electrode and the semiconductor element is increased, the adhesion between the two can be ensured, and the heat transfer efficiency can be improved.
And it becomes possible to fully exhibit the effect of the heat mass obtained by superimposing the connection part of an electrode with the semiconductor element on multiple layers.
[0007]
According to a second aspect of the present invention, the connecting portion between the electrode and the semiconductor element has a thickness of 2.0 mm or less.
Thereby, it is possible to prevent adverse effects such as an increase in the size of the semiconductor module and a deterioration in productivity without increasing the effect of the heat mass, and the effect of the heat mass can be obtained effectively.
[0008]
According to a third aspect of the present invention, the surface of the electrode is subjected to solder plating, and one end of the electrode and the semiconductor element are soldered together.
Thereby, each layer of the one end part of the electrode superimposed on the plurality of layers is connected to each other over a wide range, and heat generation due to a large current flowing in the junction between the semiconductor element and the one end part of the electrode can be suppressed.
In addition, the bonding of the layers at the one end can be performed at the same time when the one end of the electrode and the semiconductor element are solder-bonded, and the bonding process can be simplified.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the accompanying drawings.
[0010]
An embodiment of an electrode structure of a semiconductor module according to the present invention will be described.
As shown in FIGS. 1 and 2, the semiconductor module 1 includes a lead frame 2 composed of a die pad portion 2 a and lead portions 2 b, 2 c, and 2 d, and solder 4 on the die pad portion 2 a of the lead frame 2. A semiconductor element 3 to be mounted; an electrode 5 that connects the semiconductor element 3 and the lead portion 2b of the lead frame 2; a bonding wire 7 that connects the semiconductor element 3 and the lead portion 2c of the lead frame 2; And a sealing resin 6 for molding the peripheral region (electrode 5, die pad portion 2 a of lead frame 2, etc.).
[0011]
A source electrode 3 a and a gate electrode 3 b are formed on the upper surface of the semiconductor element 3. One end 51 of the electrode 5 formed in a plate shape is connected to the source electrode 3 a through the solder 4, and the other end The part 52 is connected to the lead part 2 b of the lead frame 2.
The bonding wire 7 connects the gate electrode 3b of the semiconductor element 3 and the lead portion 2c.
Further, the die pad portion 2a and the lead portion 2d are integrally formed. By soldering the lower surface of the semiconductor element 3 formed on the drain electrode to the die pad portion 2a, the drain electrode and the lead portion 2d are connected. It is connected.
[0012]
The lead portions 2b, 2c, and 2d of the lead frame 2 and the die pad portion 2a are arranged with a step so that the lead portions 2b, 2c, and 2d are in a high position, and the semiconductor element 3 and the lead portion 2b Is also bent at the middle so that the other end 52 is positioned higher than the one end 51.
[0013]
In addition, one end 51 of the electrode 5 is bent in the middle and connected to the semiconductor element 3 in a state of being superimposed on a plurality of layers.
For example, one end 51 in FIG. 2 is bent in the middle, and the lower layer 51 a faces the semiconductor element 3 via the solder 4 in a state where the lower layer 51 a positioned below and the upper layer 51 b positioned above are overlapped. It is connected.
[0014]
The electrode 5 is solder-plated on its surface.
Therefore, when the one end portion 51 of the electrode 5 and the source electrode 3a of the semiconductor element 3 are solder-joined, the solder plated on the surface of the electrode 5 is melted, and the upper surface and the upper layer 51b of the lower layer 51a in an overlapped state. Are joined to the lower surface.
[0015]
In this way, the one end 51 of the electrode 5 connected to the semiconductor element 3 is bent and overlapped with a plurality of layers, so that the thickness of the one end 51 becomes thicker than the other part of the electrode 5. (For example, when two layers of the lower layer 51a and the upper layer 51b are overlapped, the thickness is twice as large as the thickness of the other end portion 52).
Thereby, the heat mass of the one end portion 51 of the electrode 5 connected to the semiconductor element 3 can be increased, and the one end portion 51 can have a function as a heat sink, and the heat generated in the semiconductor element 3 can be increased. It becomes possible to improve heat dissipation.
[0016]
Further, in order to increase the heat mass of the connection portion of the electrode with the semiconductor element 3, it is conceivable to increase the thickness of the entire electrode 65 like the electrode 65 of the semiconductor module 60 shown in FIG. 3.
However, when the electrode 65 is thickened as a whole, the R-shaped (arc-shaped) portion generated at the bent portion 65a at the step portion between the one end portion 66 and the other end portion 67 becomes large.
Further, in the semiconductor modules 1 and 60 configured as molds, the distance W0 between the leads 2b, 2c, and 2d of the lead frame 2 and the semiconductor element 3 can only be small due to restrictions on the size of the entire module.
Therefore, when the R-shaped portion generated in the bent portion 65a is increased, the range R0 connected to the semiconductor element 3 at the one end portion 66 of the electrode 65 is decreased.
[0017]
That is, since the distance between the ends of the leads 2c and 2d and the end of the semiconductor element 3 is small, the one end 66 and the source electrode 3a of the semiconductor element 3 are affected by the thickness of the electrode 65 and the R-shaped portion of the bent portion 65a. It is not possible to ensure a large joint area.
As a result, the heat transfer area from the semiconductor element 3 to the electrode 65 decreases, and the effect of the heat mass obtained by increasing the thickness of the electrode 65 cannot be fully exhibited.
[0018]
On the other hand, as in the semiconductor module 1 shown in FIG. 2, when one end 51 of the electrode 5 is bent in the middle and connected to the semiconductor element 3 in a state of being stacked on a plurality of layers, the one end 51 and the other end The end portion of the lower layer 51a of the one end portion 51 can be disposed below the bent portion 5a in the stepped portion with the portion 52.
Furthermore, it is possible to extend the end portion of the lower layer 51a to the other end portion 52 side than the bent portion 5a.
Since the end portion of the lower layer 51a is formed in an angular shape instead of an R shape, it is possible to secure a wide bonding area with the semiconductor element 3, and the heat transfer efficiency from the semiconductor element 3 to the electrode 5 is improved. be able to.
[0019]
Thus, by arranging the lower layer 51a below the bent portion 5a of the electrode 5 or on the other end 5 side, the range R1 in which the one end portion 51 of the electrode 5 and the semiconductor element 3 are connected can be increased. it can.
Thereby, the junction area of the one end part 51 of the electrode 5 and the semiconductor element 3 increases, both adhesiveness can be ensured, and the improvement of heat-transfer efficiency can be aimed at.
And it becomes possible to fully exhibit the effect of the heat mass obtained by superimposing the one end part 51 of the electrode 5 on the plurality of layers of the lower layer 51a and the upper layer 51b.
[0020]
Further, in addition to ensuring a large bonding area between the one end portion 51 of the electrode 5 and the semiconductor element 3, the lower layer 51 a and the upper layer 51 b of the one end portion 51 are connected over a wide range by solder plated on the surface of the electrode 5. Therefore, heat generation due to a large current flowing at the junction between the semiconductor element 3 and the one end 51 can be suppressed.
[0021]
In addition, the electrode 5 has a thickness t of about 2.0 mm or less at the one end 51 formed by superposing the lower layer 51a and the upper layer 51b, for the following reason.
[0022]
That is, it is considered that the effect of the heat mass increases according to the increase in the thickness of the one end portion 51 that is the connection portion of the electrode 5 to the semiconductor element 3, but in order to increase the thickness of the one end portion 51, There is a limit due to the influence on the size and productivity of the semiconductor module 1 (the size increases or the productivity deteriorates).
[0023]
Therefore, the heat radiation effect characteristic of the semiconductor element 3 with respect to the thickness of the one end portion 51 is measured, and a suitable thickness of the one end portion 51 is obtained in consideration of the effect of the heat mass and the influence on the size and productivity of the semiconductor module 1. It was.
FIG. 4 shows the measurement result of the temperature rise value of the semiconductor element 3 with respect to the plate thickness of the one end portion 51 of the electrode 5 of the semiconductor element 3 with respect to the plate thickness of the one end portion 51.
[0024]
According to FIG. 4, the temperature rise value of the semiconductor element 3 is high when the plate thickness of the one end portion 51 is thin, and the temperature rise value of the semiconductor element 3 decreases as the plate thickness of the one end portion 51 increases. It was.
In addition, it has shown that the heat dissipation effect is so large that the temperature rise value of the semiconductor element 3 is low.
[0025]
However, as the plate thickness of the one end portion 51 increases, the degree of change in the temperature rise value of the semiconductor element 3 decreases. When the plate thickness of the one end portion 51 reaches about 1.5 mm, the change degree becomes considerably small. When it reaches about 0.0 mm, the temperature rise value of the semiconductor element 3 hardly changes and becomes almost constant.
This indicates that when the plate thickness of the one end portion 51 exceeds 1.5 mm and further reaches 2.0 mm, the effect of the heat mass at the one end portion 51 is hardly increased.
[0026]
As described above, when the thickness of the one end portion 51 exceeds 1.5 mm, the effect of the heat mass hardly increases, and when the thickness exceeds 2.0 mm, the effect of the heat mass does not increase, but the size and productivity of the semiconductor module 1 increase. Since the adverse effect increases as the plate thickness increases, in the present invention, the plate thickness of the one end portion 51 suitable for the mold type semiconductor module 1 is set to 2.0 mm or less at which an increase in the effect of the heat mass is observed.
Thereby, it is possible to prevent adverse effects such as an increase in the size of the semiconductor module and a deterioration in productivity without increasing the effect of the heat mass, and the effect of the heat mass can be obtained effectively.
[0027]
Note that the thickness of the one end portion 51 at which the increase in the effect of the heat mass is not observed differs slightly depending on the amount of current flowing through the semiconductor module 1, so It is possible to determine appropriately in the range of 2.0 mm to 1.5 mm depending on.
That is, if the amount of current is not so large and if the plate thickness exceeds 1.5 mm, an increase in the heat mass effect cannot be seen, the plate thickness of the one end 51 can be made 1.5 mm or less.
[0028]
The gate electrode 3b of the semiconductor element 3 and the lead portion 2c are connected by the bonding wire 7 in this embodiment, but the plate-like member electrode 5 that connects the source electrode 3a and the lead portion 2b It is also possible to connect with the same member.
[0029]
【The invention's effect】
As described above, according to the present invention,
It is possible to increase the heat mass of the connection portion between the electrode and the semiconductor element, and to provide the connection portion with a function as a heat sink and to sufficiently exhibit the effect of the heat mass. Heat dissipation can be enhanced. In addition, it is possible to effectively obtain a heat mass effect and to suppress heat generation at the joint between the semiconductor element and the electrode.
[Brief description of the drawings]
FIG. 1 is a plan view showing a semiconductor module having an electrode structure of the present invention.
FIG. 2 is a side sectional view showing the inside of the mold of the semiconductor module.
FIG. 3 is a side sectional view showing the inside of a mold of a semiconductor module in which the electrode itself is formed thick.
FIG. 4 is a diagram showing a relationship between an electrode plate thickness and a heat dissipation effect characteristic of a semiconductor element.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor module 2 Lead frame 2a Die pad part 2b * 2c * 2d Lead part 3 Semiconductor element 5 Electrode 51 One end part 52 Other end part

Claims (3)

リードフレーム上に半導体素子を実装し、半導体素子上に電極を接続して構成したモールド型の半導体モジュールにおいて、
前記電極は、板状に形成され、その一端部を折り曲げて複数層に重ね合わせた状態で半導体素子に面接続されることを特徴とする半導体モジュールの電極構造。In a mold type semiconductor module configured by mounting a semiconductor element on a lead frame and connecting an electrode on the semiconductor element,
An electrode structure of a semiconductor module, wherein the electrode is formed in a plate shape and is surface-connected to a semiconductor element in a state in which one end thereof is bent and superimposed on a plurality of layers. 前記電極の半導体素子との接続部は、その厚みが２．０ｍｍ以下であることを特徴とする請求項１に記載の半導体モジュールの電極構造。2. The electrode structure of a semiconductor module according to claim 1, wherein the connecting portion of the electrode with the semiconductor element has a thickness of 2.0 mm or less. 前記電極の表面にははんだめっきが施され、該電極の一端部と半導体素子とは、はんだ接合されることを特徴とする請求項１又は請求項２に記載の半導体モジュールの電極構造。3. The electrode structure of a semiconductor module according to claim 1, wherein the surface of the electrode is subjected to solder plating, and one end of the electrode and the semiconductor element are soldered.
JP2003176518A 2003-06-20 2003-06-20 Electrode structure of semiconductor module Pending JP2005012085A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011199161A (en) * 2010-03-23 2011-10-06 Sanken Electric Co Ltd Semiconductor device
JP2012195492A (en) * 2011-03-17 2012-10-11 Mitsubishi Electric Corp Power semiconductor module and attachment structure of the same
JP2016029688A (en) * 2014-07-25 2016-03-03 三菱電機株式会社 Power semiconductor device
JP2016082048A (en) * 2014-10-16 2016-05-16 三菱電機株式会社 Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011199161A (en) * 2010-03-23 2011-10-06 Sanken Electric Co Ltd Semiconductor device
US8304902B2 (en) 2010-03-23 2012-11-06 Sanken Electric Co., Ltd. Semiconductor device
JP2012195492A (en) * 2011-03-17 2012-10-11 Mitsubishi Electric Corp Power semiconductor module and attachment structure of the same
JP2016029688A (en) * 2014-07-25 2016-03-03 三菱電機株式会社 Power semiconductor device
JP2016082048A (en) * 2014-10-16 2016-05-16 三菱電機株式会社 Semiconductor device

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