JP2005171317A - Plating device and plating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating device where the distribution of the electric field between a substrate and an anode electrode is made uniform, further, to obtain the uniform distribution of plating film thickness even when the film thickness of an electric conductor in the surface of the substrate is changed, and to obtain uniform burying properties between the edge parts and the center in the substrate. <P>SOLUTION: The device is provided with: a substrate 4; an anode electrode 2 making electric current flow in the space with the substrate 4 across a plating solution 6; and electric field correction electrodes 16 annularly arranged between the face parallel to the face of the substrate 4 and the face parallel to the face of the anode electrode 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a plating apparatus or a plating method for plating metal, for example.

  FIG. 7 shows, for example, Proc. Of VLSI Multilevel Interconnection Conference P.I. 470 is a structural diagram of a conventional plating apparatus shown at 470; FIG.

  In FIG. 7, 1 is a plating tank, 2 is an anode electrode made of mixed copper, 3 is a plating solution supply port, 4 is a substrate on which a conductor is formed, and 5 is a current supplied to the conductor on the substrate surface. Contact, 6 is a plating solution, and 7 is an electric field shielding plate.

  Next, the operation will be described. By flowing a current from the anode electrode 2 to the substrate 4, metal can be deposited on the surface of the substrate 4. A current can flow through the substrate 4 via the contact 5. At this time, on the surface of the anode electrode 2, the metal constituting the anode emits electrons to become ions and is eluted into the plating solution 6. A conductor is formed on the surface of the substrate 4, and metal ions are received by the metal ions on the surface, so that the metal is deposited. The plating solution 6 is supplied from the supply port 3, flows along the surface of the substrate 4, and overflows the plating tank 1.

  In order to obtain a uniform film thickness, it is necessary to make the electric field distribution uniform. The electric field distribution between the anode electrode 2 and the substrate 4 is substantially uniform at the center, but spreads outward at the end. As a result, the current increases at the end of the substrate 4 and the film thickness increases. By providing the electric field shielding plate 7, it is possible to block the electric lines of force extending outward, prevent such electric field expansion, and obtain a uniform film thickness.

Such a plating technique is used, for example, for forming an LSI wiring.
FIG. 8 is a diagram showing a method of forming a wiring shown on page 107 of the December issue of “Monthly Semiconductor World”, for example.

  In FIG. 8, 8 is a lower layer wiring, 9 is an interlayer insulating film, 10 and 11 are grooves formed in the interlayer insulating film, 12 is a hole formed in the interlayer insulating film, 13 is a wiring metal, 14 is an upper layer wiring, 15 Is an interlayer connection pillar (via) for connecting the upper layer wiring and the lower layer wiring, and grooves 10 and 11 and a hole 12 are formed in the interlayer insulating film 9 formed on the lower layer wiring 8 by photolithography and dry etching. Further, an adhesion layer such as Ta (tantalum) and a seed layer such as Cu (copper) are formed by PVD (physical vapor deposition) or CVD (chemical vapor deposition). After forming a wiring material such as Cu by plating, a wiring is formed by removing the adhesion layer, seed layer, and wiring material formed in addition to the grooves 10 and 11 and the holes 12 by CMP (chemical mechanical polishing). be able to.

  In order to embed a metal film in the fine holes 12 and grooves 10 and 11 formed in the base by plating, a plurality of additives are added to the plating solution. This additive has a function of improving the deposition rate of the plating, for example, in the fine holes 12 and the grooves 11. As a result, a metal film is preferentially formed in the fine holes 12 and the grooves 11, and good embedding characteristics can be obtained. However, if the plating is continued even after the filling is completed, the plating film thickness of the fine holes 12 and the grooves 11 becomes thicker than the other parts, and the plating film swells conversely as shown in the figure. Such excitement is called hump. The actual pattern includes not only fine holes and grooves but also wide grooves, and the time for embedding the wide grooves is longer, so the plating time is determined by the embedding of the wide grooves. As a result, humps are formed in the fine holes 12 and the grooves 11. When such a hump is removed by CMP in the next step, a portion of a wide groove where no hump is formed is excessively polished. As a result, as shown in the drawing, a recess in the wiring called dishing occurs in the wide groove portion, causing an increase in wiring resistance or resistance variation.

  Moreover, the plating apparatus with which the 3rd electrode arrange | positioned so that a plating tank may be divided is disclosed as a prior art (refer patent document 1).

  Moreover, a plating apparatus provided with a cathode electrode as a third electrode is disclosed (see Patent Document 2).

In addition, a plating apparatus is disclosed in which a wafer and an anode electrode are opposed to each other in a plating solution in a plating tank, and a disk-shaped auxiliary electrode having a smaller diameter than the wafer is disposed therebetween (see Patent Document 3).
JP-A-52-125426 Japanese Patent Laid-Open No. 9-157897 JP 2000-290798 A

  In a conventional plating apparatus, a uniform electric field distribution is realized by an electric field shielding plate. However, the electric field distribution is also affected by the resistance of the conductor on the substrate surface. That is, when the resistance of the conductor is high, current easily flows at the end portion close to the contact portion. In the conventional plating apparatus, such a film thickness distribution has been eliminated by further optimizing the shape and arrangement of the electric field shielding plate.

  However, since the electric field distribution changes when the thickness of the conductor on the substrate surface changes, in order to obtain a uniform film thickness distribution for different plating film thicknesses, It was necessary to change the shape. Conversely, with the same electric field shielding plate, a uniform film thickness distribution was obtained only with a part of the plating film thickness. If the electric field shielding plate is replaced according to the plating film thickness, the operating rate of the apparatus is significantly reduced. Further, when the same electric field shielding plate is used, there is a problem that the film thickness distribution changes depending on the plating film thickness, and the dishing during polishing becomes large.

  In addition, since filling of fine holes and grooves occurs preferentially, filling occurs when the conductor film thickness on the substrate surface is thin. Thus, when the conductor film thickness on the substrate surface is thin, the current flows more easily at the end portion than at the center of the substrate, so that the embedding speed at the end portion is faster than at the center portion. As a result, there is a problem that the hump becomes larger at the edge of the substrate and the dishing in the CMP process becomes larger.

  An object of the present invention is to obtain a plating apparatus in which the electric field distribution is uniform even when the thickness of the conductor on the substrate surface changes.

  Moreover, it aims at obtaining uniform film thickness distribution also in the plating film thickness from which the plating film thickness to embed differs.

  It is another object of the present invention to obtain a uniform burying characteristic at the edge and center of the substrate even if the electric field distribution becomes uniform even if the thickness of the conductor on the substrate surface changes.

The plating apparatus according to the present invention includes a cathode electrode,
An anode electrode for passing an electric current between the cathode electrode and the cathode via a plating solution;
And a third electrode arranged in an annular shape between a surface parallel to the surface of the cathode electrode and a surface parallel to the surface of the anode electrode.

  The third electrode is disposed between the cathode electrode and the anode electrode and outside the outer periphery of the cathode electrode, and an electric field distribution between the cathode electrode and the anode electrode is applied by applying a voltage. It is characterized by correcting.

The third electrode has an opening penetrating in the center,
The third electrode is arranged such that an electric field between the cathode electrode and the anode electrode passes through the opening.

  The third electrode is characterized in that a voltage to be applied is changed while a current is flowing between the cathode electrode and the anode electrode.

  The voltage to be applied is changed according to the integrated value of the plating current.

  A plurality of the third electrodes are arranged between the cathode electrode and the anode electrode.

  Each of the plurality of third electrodes arranged is applied with a voltage having a set voltage value.

  The third electrode is disposed between the cathode electrode and the anode electrode, and the surface on the cathode electrode side and the surface on the anode electrode side are covered with an insulating cover.

  The third electrode is disposed in a plating solution and is covered with an insulating cover so that the surface does not touch the plating solution.

The cathode electrode is a substrate having a conductive film formed on the surface,
The substrate is connected to a wiring through which a current flows at an outer peripheral portion of the conductive film.

In the plating method according to the present invention, a conductive film is formed on the surface, and a current is passed through a plating solution between a substrate connected by a wiring through which a current flows and an outer peripheral portion of the conductive film, and an anode electrode. Process,
While the energization process is performed, the substrate and the anode electrode are applied by applying a voltage to a third electrode that is disposed between the substrate and the anode electrode and is annularly disposed outside the outer periphery of the conductive film. And an electric field correction step of correcting the electric field distribution between the two.

  According to this invention, even if the film thickness of the conductor on the substrate surface changes, the electric field can be corrected accordingly. As a result, a uniform film thickness distribution can be obtained even at different plating film thicknesses. In addition, uniform filling characteristics can be obtained at the end and center of the substrate.

Embodiment 1 FIG.
FIG. 1 is a diagram showing a configuration of a plating apparatus in the first embodiment.

  In FIG. 1, 1 is a plating tank, 2 is an anode electrode made of phosphorous copper that serves as an anode (positive electrode), 3 is a supply port for plating solution, and 4 is a substrate (cathode (negative electrode) having a conductor formed on the surface. 5 is a contact serving as a wiring for supplying a current to a conductor on the substrate surface (so that a current flows through the conductive film 50), 6 is a plating solution, and 16 is an electric field correction electrode. (It is an example of a third electrode).

  The plating apparatus 100 includes a plating tank 1, an anode electrode 2, a supply port 3, a contact 5, and an electric field correction electrode 16. Other configurations are omitted. The plating tank 1 contains a plating solution 6. A conductive material 50 is formed on the surface of the substrate 4 as a conductive film 50, and is connected to a contact 5 serving as a wiring through which a current flows and the outer peripheral portion of the conductive film 50. 1 is arranged at the top.

  Next, the operation will be described. A copper sulfate bath is used for the plating solution 6. The main components of the copper sulfate bath are copper sulfate, sulfuric acid, and water, and a small amount of chlorine ions and additives are added to this. The temperature of the plating solution 6 is controlled at 25 ° C. The plating solution 6 is supplied from the supply port 3, flows along the surface of the substrate 4, and overflows the plating tank 1. The overflowed plating solution 6 is collected and supplied from the supply port 3.

  As an energization process, an electric current is passed through the plating solution 6 between the substrate 4 serving as the cathode electrode and the anode electrode 2. A current flowing between the anode electrode 2 and the substrate 4 is controlled by a constant current source, and a current can be supplied to the substrate 4 via the contact 5. The electric field correction electrode 16 is fixed to the plating tank 1 and is formed in a ring shape and in this case in a concentric shape. The electric field correction electrode 16 has an opening penetrating in the center. The electric field correction electrode 16 is arranged so that the electric field between the substrate 4 and the anode electrode 2 passes through the opening. In other words, it opens concentrically between the plane parallel to the plane of the substrate 4 and the plane parallel to the plane of the anode electrode 2. For example, the electric field correction electrode 16 is formed in a ring shape. The electric field correction electrode 16 may be a single ring or may be formed in a ring shape by combining divided parts. Then, by applying a voltage to the electric field correction electrode 16, the electric field distribution can be corrected and a uniform film thickness distribution can be obtained.

  In other words, as the electric field correction step, the electric field correction electrode 16 is annularly arranged at a position between the substrate 4 and the anode electrode 2 and outside the outer periphery of the conductive film 50 during the energization step. The electric field distribution between the substrate 4 and the anode electrode 2 is corrected by applying a voltage to the applied electric field correction electrode 16. When the voltage applied to the electric field correction electrode 16 is a positive voltage, the electric field correction electrode 16 is the same positive electrode as the anode electrode 2, so that the electric field correction electrode 16 is positioned at the outer periphery of the electric field distribution extending from the anode electrode 2 toward the substrate 4. The electric field lines to be repelled from the positive electric field generated around the electric field correction electrode 16 exert the action of pushing back the electric field lines located at the outer periphery of the electric field distribution from the outer periphery to the inner periphery. In addition, when the voltage applied to the electric field correction electrode 16 is a negative voltage, the negative electrode is the same as the cathode voltage of the substrate 4, so that part of the electric lines of force extending to the periphery are pulled by the electric field correction electrode 16. It will be. As a result, it is possible to correct the electric field that is concentrated in the periphery and becomes dense. At this time, by changing the voltage applied to the electric field correction electrode according to the integrated value of the plating current, a uniform film thickness distribution can be obtained for different plating film thicknesses. In other words, the electric field correction electrode 16 changes the voltage to be applied while a current is flowing between the substrate 4 and the anode electrode 2. As the integrated value of the plating current increases, the thickness of the Cu film plated on the substrate 4 increases, and as a result, the resistance value of the substrate decreases. Therefore, the resistance difference between the central portion of the substrate and the end portion of the substrate is reduced, and the correction amount of the electric field distribution can be reduced. Therefore, whether the positive voltage is applied or the negative voltage is applied, the absolute value of the voltage applied to the electric field correction electrode 16 is changed to a smaller voltage value as the integrated value of the plating current increases. . At this time, when the electric potential of the electric field correction electrode 16 is negative, a current flows between the electric field correction electrode 16 and the anode electrode 2, so that Cu (copper) is deposited on the electric field correction electrode 16. When the deposited Cu film becomes thick, Cu peels off and generates particles. In such a case, a positive voltage (for example, +0.3 V or more) is periodically applied to the electric field correction electrode 16 to remove the deposited Cu on the surface. It is desirable to do.

  Table 1 shows a comparison of film thickness distribution with a conventional plating apparatus.

  However, in Table 1, in the conventional plating apparatus, the electric field shielding plate is set so that the film thickness distribution is optimal when the plating film thickness is 1 μm. The base substrate 4 is formed with a Si oxide film having a thickness of 100 nm on a Si (silicon) substrate having a diameter of 200 mm, and Ta (tantalum) is 20 nm as an adhesion layer thereon and Cu is 100 nm by PVD as a seed layer (conductive film). What was formed was used. It can be seen from Table 1 that a good film thickness distribution can be obtained for all plating film thicknesses by the plating apparatus 100 according to the present embodiment.

  Plating was performed on the substrate 4 on which grooves were formed in the same manner as the upper diagram of FIG. The base substrate 4 was produced as follows. First, a Si oxide film of 100 nm, a Si nitride film of 100 nm, and a Si oxide film of 500 nm were sequentially formed on a 200 nm Si substrate. A resist pattern was formed by photolithography and dry etching was performed by a dry etching method to form a groove 11 in the uppermost Si oxide film. The width of the groove 11 is 0.25 μm. By selecting dry etching conditions that almost stop at the Si nitride film, the groove 11 having a depth of 0.5 μm could be formed in the uppermost Si oxide film with good controllability. Thus, a groove having a width of 0.25 μm and a depth of 0.5 μm was formed. Furthermore, Ta with a thickness of 20 nm was formed as an adhesion layer, and Cu with a thickness of 100 nm was formed as a seed layer by a PVD method.

  FIG. 2 is a diagram showing the Cu film thickness in the groove when the plating time is changed.

  However, in FIG. 2, the Cu film thickness is defined by the thickness from the bottom surface of the groove to the upper surface of the Cu film thickness formed in the groove. In the conventional plating apparatus, it can be seen that the Cu filling progresses faster in the peripheral portion than in the central portion of the substrate. As a result, the hump increases at the periphery of the substrate. On the other hand, in the plating apparatus 100 according to the present embodiment, it can be seen that Cu embedding proceeds almost simultaneously in the central portion and the peripheral portion of the substrate 4. This result can be explained as follows. In the conventional plating apparatus here, the plating film thickness is 1 μm and the film thickness distribution is optimized. For this reason, when the film is formed, that is, when the Cu film is very thin, the electric field is concentrated around the substrate. As a result, Cu filling progresses quickly in the peripheral portion. On the other hand, in the plating apparatus 100 according to the present embodiment, the electric field distribution becomes uniform with respect to different plating film thicknesses by changing the positive voltage applied to the electric field correction electrode 16 according to the integrated value of the plating current. Cu filling in the central portion and the peripheral portion of the substrate 4 proceeds almost simultaneously. Table 2 shows the results of polishing the substrate 4 by CMP to form Cu wiring and measuring the electrical resistance.

  It can be seen that the samples plated by the conventional plating apparatus have large resistance variations and high average values. In a sample plated with a conventional plating apparatus, the difference between the humps in the peripheral part and the central part is large, and if polishing is performed so that Cu can be completely removed in the peripheral part, the polishing becomes excessive in the central part. This is because the dipping is increased by the wirings. As a result, it can be explained that the wiring resistance is increased at the center, and the above result is obtained.

  In the present embodiment, the electric field correction electrode 16 is shown as an example of a concentric circle, but other shapes may be used, and the present invention is not limited to this.

  FIG. 3 is a view in which the upper and lower surfaces of the electric field correction electrode 16 in FIG.

  As shown in FIG. 3, the upper and lower surfaces of the electric field correction electrode 16 may be covered with an insulator 37. In other words, the electric field correction electrode 16 disposed between the substrate 4 and the anode electrode 2 is covered with an insulator 37 whose surface on the substrate 4 side and surface on the anode electrode 2 side are insulating covers. You may make it. Covering with an insulator in this way can make correction of the electric field distribution more effective.

  As described above, the plating apparatus 100 has a mechanism for passing a current between the anode electrode 2 and the substrate 4, has one or a plurality of electrodes in addition to the anode electrode 2, and can apply a voltage to these electrodes. The applied voltage is changed with respect to the plating film thickness.

  In addition, the plating apparatus 100 has a mechanism for passing a current between the anode electrode 2 and the substrate 4, has one or a plurality of electrodes in addition to the anode electrode, and can apply a voltage to these electrodes. The applied voltage is changed with time.

  In the plating apparatus here, the electrode is in direct contact with the plating solution.

Embodiment 2. FIG.
Next, a second embodiment will be described.

  FIG. 4 is a diagram showing the configuration of the plating apparatus in the second embodiment.

  In FIG. 4, 1 is a plating tank, 2 is an anode electrode made of phosphorous copper, 3 is a supply port for a plating solution, 4 is a substrate on which a conductor is formed, and 5 is a current supplied to the conductor on the substrate surface. The reference numeral 6 is a plating solution, 16 is an electric field correction electrode, and 17 is an insulating film (an example of a disconnection cover). Except for the insulating film 17, it is the same as FIG. The surface of the electric field correction electrode 16 is covered with an insulating film 17. The electric field correction electrode 16 has a concentric shape and is fixed to the plating tank 1.

  In the first embodiment, the electric field correction electrode 16 is in contact with the plating solution 6, and when a negative voltage is applied to the electric field correction electrode 16, Cu is deposited on the surface of the electric field correction electrode 16. It was necessary to remove. Further, when a negative voltage is applied to the electric field correction electrode 16, the electrode is damaged by, for example, Cl (chlorine) ions in the plating solution, so that it is necessary to periodically replace the electrode. Such an operation is complicated and reduces the operating rate of the plating apparatus 100. In the apparatus shown in FIG. 4, the surface of the electric field correction electrode 16 is covered and covered with an insulating film 17 serving as an insulator, and the electric field correction electrode 16 does not come into contact with the plating solution 6. This eliminates the need to improve the operating rate of the apparatus and reduce the maintenance cost.

  Table 3 shows the results of evaluating the film thickness distribution of the plating film using the same sample as in the first embodiment.

  However, in the conventional plating apparatus, the electric field shielding plate is set so that the film thickness distribution is optimized when the plating film thickness is 1 μm. As shown in Table 3, it can be seen that the same effect as in the first embodiment can also be obtained in the plating apparatus 100 according to the present embodiment.

  It is desirable that the insulating film 17 covering the electric field correction electrode 16 is thin. Further, by making the film thickness of the insulating films on the upper and lower surfaces of the electrode thicker than the film thickness of the insulating film on the inner surface side, the directivity of the electric field toward the inner periphery side of the electric field correction electrode can be increased.

  Moreover, although the example of the electrode covered with the insulating film 17 is shown this time, the electrode may be embedded in the plating tank.

  As described above, the plating apparatus in the present embodiment is characterized in that the electrode does not directly contact the plating solution.

Embodiment 3 FIG.
Next, a third embodiment will be described.

  FIG. 5 is a diagram showing the configuration of the plating apparatus in the third embodiment.

  In FIG. 5, 1 is a plating tank, 2 is an anode electrode made of phosphorous copper, 3 is a plating solution supply port, 4 is a substrate on which a conductor is formed, and 5 is a current supplied to the conductor on the substrate surface. Contact, 6 is a plating solution, and 16 is an electric field correction electrode.

  In the first embodiment, only one electric field correction electrode 16 is provided, but in this embodiment, for example, three electric field correction electrodes are arranged. Other configurations are the same as those in the first embodiment. In other words, a plurality of the electric field correction electrodes 16 are disposed between the substrate 4 and the anode electrode 2 which are the cathode electrodes. Here, three electric field correction electrodes 16 are arranged, but the present invention is not limited to this. Here, if the number of the electric field correction electrodes 16 is increased, the degree of freedom of electric field correction can be increased. However, if the number of the electric field correction electrodes 16 is increased, the optimization of the voltage waveform applied to each electric field correction electrode 16 becomes complicated. Therefore, it is desirable that the number of the electric field correction electrodes 16 be small if the desired effect can be obtained without making the optimization of the voltage waveform applied to each electric field correction electrode 16 complicated. For example, 2-3 pieces are desirable. A voltage is applied to these electric field correction electrodes 16 independently of each other. In other words, each electric field correction electrode 16 of the plurality of electric field correction electrodes 16 is applied with a voltage having a set voltage value. Moreover, the voltage values set as shown in the first embodiment may be changed while a current is flowing between the substrate 4 and the anode electrode 2. With such a configuration, the degree of freedom in correcting the electric field distribution can be increased, and the film thickness distribution can be improved with respect to a wider plating film thickness.

  Table 4 shows the results of evaluating the film thickness distribution of the plating film when plating is performed by the plating apparatus according to the present embodiment using the same sample as in the first embodiment.

  As the base substrate, an Si oxide film having a thickness of 100 nm formed on a 200 mm Si substrate, Ta as a contact layer and 20 nm as a seed layer, and Cu as a seed layer by a thickness of 100 nm were used. Compared to the first embodiment, an excellent film thickness distribution could be obtained in a wider film thickness range.

  Using the same sample as in the first embodiment, the film formation rate in the groove was evaluated.

  FIG. 6 is a diagram showing the Cu film thickness in the groove when the plating time is changed.

  However, the Cu film thickness at this time is defined by the thickness from the bottom surface of the groove to the upper surface of the Cu film formed in the groove. In the plating apparatus 100 according to the present embodiment, the Cu embedment proceeds almost simultaneously in the central portion and the peripheral portion of the substrate 4, and it can be seen that the same effect as in the first embodiment can be obtained. As can be inferred from the result of the film thickness distribution, the embedding characteristics in the central portion and the peripheral portion are more uniform than in the first embodiment. As described above, the electric field correction effect can be further increased by increasing the degree of freedom in correcting the electric field distribution and increasing the correction accuracy.

  As described above, in this embodiment, the case where three electric field correction electrodes are arranged is shown, but two or four or more electrodes may be used, and the same effect can be exhibited.

  As described above, in the plating apparatus according to the above-described embodiment, the voltage applied to the electric field correction electrode is changed according to the plating time, so that the film thickness of the conductor on the substrate surface can be changed. Electric field correction can be performed. As a result, a uniform film thickness distribution can be obtained even at different plating film thicknesses. In addition, uniform filling characteristics can be obtained at the end and center of the substrate.

  Further, as described above, in the plating apparatus in each of the above embodiments, one or a plurality of electric field correction electrodes are provided, a voltage is applied to these electrodes, and the applied voltage is changed according to the plating time. Even if the film thickness of the conductor on the surface of the substrate changes, the electric field can be corrected. As a result, a uniform film thickness distribution can be obtained even at different plating film thicknesses. Further, even if the thickness of the conductor on the substrate surface changes, uniform embedding characteristics can be obtained at the edge and center of the substrate.

It is a figure which shows the structure of the plating apparatus in Embodiment 1. FIG. It is a figure which shows Cu film thickness in a groove | channel when changing plating time. It is the figure which covered the upper surface and lower surface of the electric field correction electrode in FIG. 1 with the insulator. It is a figure which shows the structure of the plating apparatus in Embodiment 2. FIG. It is a figure which shows the structure of the plating apparatus in Embodiment 3. FIG. It is a figure which shows Cu film thickness in a groove | channel when changing plating time. It is a figure which shows the structure of the conventional plating apparatus. It is a figure which shows the formation method of wiring.

Explanation of symbols

  1 plating tank, 2 anode electrode, 3 supply port, 4 substrate, 5 contact, 6 plating solution, 7 electric field shielding plate, 8 lower layer wiring, 9 interlayer insulating film, 10, 11 groove, 12 holes, 13 wiring metal, 14 upper layer Wiring, 15 interlayer connection pillar, 16 electric field correction electrode, 17 insulating film, 100 plating apparatus.

Claims (11)

A cathode electrode;
An anode electrode for passing an electric current between the cathode electrode and the cathode via a plating solution;
A plating apparatus comprising: a third electrode arranged in an annular shape between a surface parallel to the surface of the cathode electrode and a surface parallel to the surface of the anode electrode.   The third electrode is disposed between the cathode electrode and the anode electrode and outside the outer periphery of the cathode electrode, and an electric field distribution between the cathode electrode and the anode electrode is applied by applying a voltage. The plating apparatus according to claim 1, wherein: The third electrode has an opening penetrating in the center,
The plating apparatus according to claim 2, wherein the third electrode is disposed so that an electric field between the cathode electrode and the anode electrode passes through the opening.   The plating apparatus according to claim 2, wherein the third electrode changes a voltage to be applied while a current is passed between the cathode electrode and the anode electrode.   The plating apparatus according to claim 4, wherein the voltage to be applied changes according to the integrated value of the plating current.   The plating apparatus according to claim 2, wherein a plurality of the third electrodes are arranged between the cathode electrode and the anode electrode.   The plating apparatus according to claim 6, wherein each of the plurality of third electrodes arranged is applied with a voltage having a set voltage value.   3. The third electrode is disposed between the cathode electrode and the anode electrode, and the surface on the cathode electrode side and the surface on the anode electrode side are covered with an insulating cover. Plating equipment.   The plating apparatus according to claim 2, wherein the third electrode is disposed in a plating solution and is covered with an insulating cover so that the surface does not come into contact with the plating solution. The cathode electrode is a substrate having a conductive film formed on the surface,
The plating apparatus according to claim 2, wherein the substrate is connected to a wiring through which a current flows at an outer peripheral portion of the conductive film. An energization process in which a conductive film is formed on the surface, and a current is passed between the substrate connected by the wiring through which the current flows and the outer periphery of the conductive film, and the anode electrode through the plating solution;
While the energization process is performed, the substrate and the anode electrode are applied by applying a voltage to a third electrode that is disposed between the substrate and the anode electrode and is annularly disposed outside the outer periphery of the conductive film. A plating method comprising: an electric field correction step of correcting an electric field distribution between the two.

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