JP2005252123A - Semiconductor device - Google Patents

Abstract

A semiconductor device capable of greatly suppressing electromagnetic noise at an input / output terminal is provided.
A first semiconductor chip (111) and a second semiconductor chip (112a) in which an RC filter (113) made of a capacitor (C) and a resistor (R) is formed on a semiconductor substrate are provided. The chips 112 a are stacked, and the RC filter 113 of the second semiconductor chip 112 a is connected to the terminals of the first semiconductor chip 111. Thereby, the tolerance with respect to the electromagnetic noise of the input / output terminal 114 of the 1st semiconductor chip 111 can be strengthened.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device applied to a system LSI or the like in which a plurality of semiconductor chips are mounted in the same package using a SIP (System In Package) technique for bonding semiconductor chips.

  FIG. 10 shows an example of a conventional input circuit. In FIG. 10, 11 is an input / output terminal, 12 is an input protection circuit, 13 is a capacitive resistance circuit, 14 is an initial input element, 15 is a power supply (VDD), and 16 is ground (GND). In FIG. 10, a capacitive resistor circuit 13 serves as an RC filter, and suppresses electromagnetic noise from the input terminal (see, for example, Patent Document 1).

FIG. 11 shows a conventional circuit configuration example for suppressing electromagnetic noise. In FIG. 11, 21 represents a semiconductor substrate, 22 represents an electrode, 23 represents a dielectric material, and 24 represents an insulating film. Electromagnetic noise is suppressed by forming a capacitor by sandwiching the insulating film 24 between the dielectrics 23 and electrically connecting one of the dielectrics 23 to the power supply (VDD) and the other to the ground via the electrode 22. Furthermore, electromagnetic noise is also suppressed by covering the semiconductor substrate with a grounded dielectric material (see, for example, Patent Document 2).
Japanese Unexamined Patent Publication No. 03-131061 (1-4, Fig. 1) JP-A-8-162608 (1-3, Fig. 1)

  However, in the configuration in which the RC filter is formed on the single semiconductor substrate as described above, it is difficult to form a capacity sufficient to suppress electromagnetic noise as the process is miniaturized and densified. Had. In addition, since the elements are formed on a single semiconductor substrate, it is necessary to recreate the semiconductor chip itself in order to change only the terminal specifications or to enhance the electromagnetic noise resistance.

  Therefore, an object of the present invention is to provide a semiconductor device capable of greatly suppressing electromagnetic noise at the input / output terminals and capable of changing the specifications of the input / output terminals without re-creating a semiconductor chip. That is.

  The semiconductor device of the present invention includes a first semiconductor chip and a second semiconductor chip in which an RC filter including a capacitor C and a resistor R is formed on a semiconductor substrate, and the first semiconductor chip and the second semiconductor chip. And an RC filter of the second semiconductor chip is electrically connected to the terminals of the first semiconductor chip.

  Another semiconductor device of the present invention includes a first semiconductor chip and a second semiconductor chip in which a plurality of RC filters each including a capacitor C and a resistor R are formed on a semiconductor substrate. The semiconductor chips are stacked, and the RC filter of the second semiconductor chip is electrically connected to each of the plurality of terminals of the first semiconductor chip.

  Another semiconductor device of the present invention includes a first semiconductor chip, and a second semiconductor chip in which a plurality of RC filters having different time constants each including a capacitor C and a resistor R are formed on a semiconductor substrate. The chip and the second semiconductor chip are stacked, and the RC filter of the second semiconductor chip can be selected and electrically connected to the terminal of the first semiconductor chip.

  Another semiconductor device of the present invention includes a first semiconductor chip and a second semiconductor chip covered with a conductor, the first semiconductor chip and the second semiconductor chip are stacked, and the second semiconductor chip The upper conductive member is electrically grounded.

  Another semiconductor device of the present invention includes a first semiconductor chip and an input circuit that matches an input specification of an input terminal of the first semiconductor chip in the second semiconductor chip. These semiconductor chips are stacked, and the input circuit of the second semiconductor chip is electrically connected to the input terminal of the first semiconductor chip.

  Another semiconductor device of the present invention includes a first semiconductor chip and a second semiconductor chip having a plurality of input circuits having different specifications connectable to input terminals of the first semiconductor chip. A semiconductor chip and a second semiconductor chip are stacked, and selected from a plurality of input circuits of the second semiconductor chip and electrically connected to an input terminal of the first semiconductor chip.

  In another semiconductor device of the present invention, a first semiconductor chip, an input / output circuit that operates at a potential different from that of the first semiconductor chip, and a level shifter circuit that shifts the potential to the potential of the first semiconductor chip are formed. A second semiconductor chip is provided, the first semiconductor chip and the second semiconductor chip are stacked, and the level shifter circuit is electrically connected to the first semiconductor chip.

  Another semiconductor device of the present invention includes a first semiconductor chip having a pad portion for electrically connecting input / output signals, and a second semiconductor chip having a pad portion and an input / output circuit. One semiconductor chip and a second semiconductor chip are stacked, and an input / output circuit is electrically connected to a pad portion of the first semiconductor chip.

  Another semiconductor device of the present invention includes a first semiconductor chip having a power supply pad and a second semiconductor chip in which a plurality of power supply pads are formed on a semiconductor substrate and all of them are electrically connected. The semiconductor chip and the second semiconductor chip are stacked, and the power pad of the second semiconductor chip and the power pad of the first semiconductor chip are electrically connected.

  Another semiconductor device of the present invention includes a first semiconductor chip and a second semiconductor chip in which an oscillation circuit or a damping element is formed on a semiconductor substrate, and the first semiconductor chip and the second semiconductor chip are stacked. The oscillation circuit or the damping resistor / capacitance is electrically connected to the first semiconductor chip.

  Another semiconductor device of the present invention includes a first semiconductor chip and a second semiconductor chip in which a surge absorption transistor is formed on a semiconductor substrate, and the first semiconductor chip and the second semiconductor chip are stacked, The surge absorbing transistor is electrically connected to the first semiconductor chip.

  According to the present invention, the RC filter circuit composed of the capacitor C and the resistor R, the input / output passive / active element, the circuit element related to the terminal specifications such as the oscillation circuit, or the second element covered with the conductive material is used. The semiconductor chip is bonded to the conventionally designed first semiconductor chip and electrically connected to the input / output terminal of the first semiconductor. For this reason, it is possible to enhance resistance to electromagnetic noise, and it is possible to change the specifications of the input / output terminals of the semiconductor chip simply by changing the wiring connection between the first semiconductor chip and the second semiconductor chip. It is.

  Further, the input specifications can be changed by providing a plurality of input circuits having different specifications on the second semiconductor chip and selecting the input circuits.

  By providing a level shifter circuit in the second semiconductor chip, a multi-power supply specification can be easily achieved.

  By forming a plurality of power supply pads connected to each other on the second semiconductor chip, the number of power supply terminals can be reduced to, for example, one.

  By providing the second semiconductor chip on which the oscillation circuit is formed, it is possible to make the oscillation characteristics the same when developing the series of semiconductor chips, and the series can be easily developed.

  Embodiments of the present invention will be described below with reference to the drawings. Note that the present invention is not limited to the following embodiments.

(Embodiment 1)
FIG. 1 shows the configuration of the semiconductor device according to the first embodiment of the present invention. In FIG. 1, reference numeral 111 denotes a conventional semiconductor chip, 112a denotes a semiconductor chip on which a plurality of RC filters 113 are formed, 113 denotes an RC filter composed of a resistance element R and a capacitance element C, 114 denotes an input / output terminal of the semiconductor chip 111, 115 Is a lead frame, and 116 is a wiring which is a connecting member, that is, wiring using a wire, and shows electrical connection by wire bonding.

  As illustrated, the semiconductor chip 111 and the semiconductor chip 112a are stacked, and the lead frame 115 is connected to the input / output terminal 114 via the wiring 116 and the RC filter 113 of the semiconductor chip 112a.

  According to this configuration, by connecting the RC filter 113 to the input / output terminal 114 of the conventional semiconductor chip 111, a noise filter is formed for the input / output signal, and electromagnetic noise can be reduced. In addition, with respect to the increase in the chip area, which is a problem, the RC filter circuit portion formed in the input / output terminal portion of the semiconductor chip 111 is deleted by bonding the semiconductor chip 112a forming the RC filter 113 to the semiconductor chip 111. It is possible to add an RC filter 113 that is sufficient to reduce electromagnetic noise applied to the input / output terminal 114 without increasing the area of the semiconductor chip 111.

  In the first embodiment, an RC filter applied to one input / output terminal 114 is described, but the present invention is not limited to this. By providing a plurality of RC filter circuits on the semiconductor chip 112a, an RC filter for a plurality of input / output terminals is formed, and electromagnetic noise at a plurality of input / output terminals required to reduce noise can be reduced. .

(Embodiment 2)
FIG. 2 shows the configuration of the semiconductor device according to the second embodiment of the present invention. In FIG. 2, the same components as those in FIG.

  In FIG. 2, 112b is a semiconductor chip formed so that the time constant of the RC filter can be selected, 121 is a pad part with slits, 122a to 122c are capacitor parts, and a bad part 121 with slits is a wiring. By doing so, it is assumed that they are electrically connected.

  According to such a configuration, by changing the connection of the wiring 116a to the wiring 116b or the wiring 116c, the capacitance value is changed from a to 2a or 3a, which is suitable for the specifications of the input terminal without recreating the semiconductor chip 111. A time constant RC filter can be added to the input / output terminal 114. Further, in the case of the present invention, the mounting area of the circuit can be reduced by using one resistance element R as compared with the case where a plurality of RC filters are prepared.

(Embodiment 3)
FIG. 3 shows the configuration of the semiconductor device according to the third embodiment of the present invention. In FIG. 3, the same components as those in FIG.

  In FIG. 3, reference numeral 112 c denotes a semiconductor chip having a conductor formed on its surface, and 131 denotes the conductor, which is assumed to be electrically grounded externally through the wiring 116.

  According to such a configuration, the semiconductor chip 111 is covered with the semiconductor chip 112c, whereby a grounded conductor is formed on the surface, and electromagnetic noise can be suppressed. Further, in the case of the present invention, it is possible to recreate a semiconductor chip, which has been a problem in forming on a single substrate, by bonding the semiconductor chip 112c without recreating the semiconductor chip 111.

(Embodiment 4)
FIG. 4 shows the configuration of the semiconductor device according to the fourth embodiment of the present invention. In FIG. 4, the same components as those in FIG.

  In FIG. 4, 112d denotes a semiconductor chip provided with an input circuit, and 141 denotes the input circuit. Examples of the input circuit 141 include, but are not limited to, an input protection circuit such as an input protection resistor, a pull-up resistor, a pull-down resistor, a Schmitt input circuit, a TTL input circuit, and a CMOS input circuit.

  According to this configuration, the input of the input circuit 141 on the lead frame 115 and the semiconductor chip 112 d is connected by the wiring 116, and the output of the input circuit 141 and the input / output terminal 114 (input terminal) of the semiconductor chip 111 are connected by the wiring 116. As a result, an input circuit for the input terminal of the semiconductor chip 111 is formed on the semiconductor chip 112d, so that the input circuit of the semiconductor chip 111 can be eliminated and the area can be reduced.

  In the fourth embodiment, one input / output circuit is described, but the present invention is not limited to this. By providing a plurality of input circuits on the semiconductor chip 112d, it is possible to cope with a plurality of input terminals that require an input circuit.

(Embodiment 5)
FIG. 5 shows a configuration of a semiconductor device according to the fifth embodiment of the present invention. In FIG. 5, the same components as those in FIG.

  In FIG. 5, 112e is a semiconductor chip having a plurality of input circuits with different specifications, 151a is a pull-up resistor circuit, 151b is a pull-down resistor circuit, 151c and 151d are Schmitt input circuits having different Schmitt widths, and 152 and 152 'are wirings. 116, pad portions 152a to 152d connected to the lead frame 115 through 116 indicate pad portions with slits connected to the pad portions 152 and 152 ', and pad portions 152a to 152d with slits are wired. It is supposed to be electrically connected.

  According to such a configuration, the specification for the input / output terminal 114 of the semiconductor chip 111 is changed by changing the connection by wiring to the pad portions 152a to 152d having slits, and the semiconductor chip 111 is recreated. The specifications can be changed easily. For example, the pull-up resistor circuit 151 a is connected to the input terminal of the semiconductor chip 111 by electrically connecting the pad 152 a having slits and the input / output terminal 114 (input terminal) on the semiconductor chip 111 by the wiring 116. Thus, the specification of the input terminal of the semiconductor chip 111 can be changed.

  Further, in contrast to forming each input element separately on the semiconductor chip 112e, the formation method of the present invention can reduce the number of pads and reduce the mounting area.

(Embodiment 6)
FIG. 6 shows a configuration of a semiconductor device according to the sixth embodiment of the present invention. In FIG. 6, the same components as those in FIG.

  6, 112f is a semiconductor chip on which the level shifter circuit 163 is formed, 161 is a power supply voltage different from that of the semiconductor chip 111, for example, an input / output circuit that operates at a higher potential than the semiconductor chip 111, and 162 is the same power supply voltage as that of the semiconductor chip 111. The input / output circuit 163 is a level shifter circuit. A indicates a power input portion of the level shifter circuit 163, and B indicates a signal input portion of the level shifter circuit 163.

  According to this configuration, the lead frame 115 and the input / output circuit 161 on the semiconductor chip 112f, and the input / output circuit 162 on the semiconductor chip 112f and the input / output terminal 114 on the semiconductor chip 111 are electrically connected by the lead frames 116d and 116e, respectively. As a result of the connection, the level shifter circuit 163 on the semiconductor 112f is connected to the interface between the semiconductor chip 111 and the outside, so that the semiconductor chip 111 does not need to be created by a complicated process and is made to have a multi-power supply specification. Even for difficult semiconductor chips, it is possible to easily make a multi-power supply specification.

(Embodiment 7)
FIG. 7 shows a configuration of a semiconductor device according to the seventh embodiment of the present invention. In FIG. 7, the same components as those in FIG.

  In FIG. 7, 112g denotes a semiconductor chip on which a pad portion and an input / output circuit are formed, 171 denotes a pad with an input / output circuit, and 172 denotes a pad without an input / output circuit.

  According to such a configuration, the lead frame 115, the pad 171 with the input / output circuit on the semiconductor chip 112g and the pad 172 without the input / output circuit on the semiconductor 111 are electrically connected by the wiring 116, thereby providing an interface with the outside. The input / output part on the semiconductor chip 111 can be the pad part only through the pad 171 with the input / output circuit on the semiconductor 112g. Further, in the case of an LSI that requires a large number of pins, pads with input / output circuits can be separately formed on the semiconductor chip 111 and the semiconductor chip 112g, and the chip size of the semiconductor chip 111 can be reduced.

(Embodiment 8)
FIG. 8 shows a configuration of a semiconductor device according to the eighth embodiment of the present invention. In FIG. 8, the same components as those in FIG.

  In FIG. 8, 112h is a semiconductor chip in which a plurality of power supply pads are electrically connected, 181 is a power supply pad that supplies power to the semiconductor chip 111, 182 is a conductor wiring that is electrically connected to the power supply pad 181, Reference numeral 183 denotes a power supply pad on the semiconductor chip 111.

  According to this configuration, the lead frame 115 and one of the power pads 181 on the second semiconductor chip 112h are electrically connected by the wiring 116, and the remaining power pads 181 and the power pads 183 on the semiconductor chip 111 are wired. By electrically connecting at 116f, a power supply to be supplied to the plurality of power supply pads 183 on the semiconductor 111 is created on the semiconductor chip 112h, and the power supply from the external specification can be made one. The number can be reduced.

(Embodiment 9)
FIG. 9 shows a configuration of a semiconductor device according to the ninth embodiment of the present invention. In FIG. 9, the same components as those in FIG.

  In FIG. 9, 112i represents a semiconductor chip on which an oscillation circuit is formed, and 191 represents an oscillation circuit.

  According to this configuration, the lead frame 115 and the oscillation circuit 191 on the semiconductor chip 112i, and the input / output terminal 114 (input terminal) on the semiconductor circuit 111 and the oscillation circuit 191 are electrically connected to each other, thereby providing a semiconductor chip. The clock generated on 112i is supplied to the semiconductor chip 111. When developing semiconductor chips having the same clock specifications, the oscillation characteristics of the developed products can be made the same by sharing the semiconductor chip 112i. .

  Instead of the oscillation circuit 191, a damping element such as a damping resistor / capacitor or a surge absorption transistor may be used. Further, although the second semiconductor chip 112a and the like are stacked on the first semiconductor chip 111, they may be stacked upside down.

  The semiconductor device according to the present invention can greatly suppress the electromagnetic noise of the input / output terminals, and there is an effect that the specifications of the input / output terminals can be changed without re-creating the semiconductor chip. It is useful as a semiconductor device.

It is a figure showing the structure of the semiconductor device which concerns on 1st Embodiment of this invention. It is a figure showing the structure of the semiconductor device which concerns on 2nd Embodiment of this invention. It is a figure showing the structure of the semiconductor device which concerns on 3rd Embodiment of this invention. It is a figure showing the structure of the semiconductor device which concerns on 4th Embodiment of this invention. It is a figure showing the structure of the semiconductor device which concerns on 5th Embodiment of this invention. It is a figure showing the structure of the semiconductor device which concerns on 6th Embodiment of this invention. It is a figure showing the structure of the semiconductor device which concerns on 7th Embodiment of this invention. It is a figure showing the structure of the semiconductor device which concerns on 8th Embodiment of this invention. It is a figure showing the structure of the semiconductor device which concerns on 9th Embodiment of this invention. It is a figure showing the structure of the conventional input circuit. It is a perspective view of the semiconductor device showing the circuit structure which suppresses the conventional EMI electromagnetic noise.

Explanation of symbols

11 Input / output terminal 12 Input protection circuit 13 Capacitance resistance circuit 14 Initial input element 15 Power supply (VDD)
16 Grounding (GND)
DESCRIPTION OF SYMBOLS 21 Semiconductor substrate 22 Electrode 23 Dielectric 24 Insulating film 111 1st semiconductor chip 112a-112i 2nd semiconductor chip 113 RC filter 114 Input / output terminal 115 Lead frame 116 Wiring 121 Slit pad part 122a-122c, 152a-152d Capacitance Element 131 Conductor material 141 Input circuit 151a Pull-up resistor circuit 151b Pull-down resistor circuit 151c, 151d Schmitt input circuit 161 Input / output terminal 163 Level shifter circuit 171 Pad with input circuit 172 Pad without input circuit 181 Power supply pad 191 Oscillator circuit

Claims (11)

  A first semiconductor chip; and a second semiconductor chip in which an RC filter including a capacitor C and a resistor R is formed on a semiconductor substrate, the first semiconductor chip and the second semiconductor chip are stacked, A semiconductor device in which the RC filter of the second semiconductor chip is electrically connected to a terminal of the first semiconductor chip.   A first semiconductor chip, and a second semiconductor chip in which a plurality of RC filters each including a capacitor C and a resistor R are formed on a semiconductor substrate, the first semiconductor chip and the second semiconductor chip being stacked, A semiconductor device in which the RC filter of the second semiconductor chip is electrically connected to each of a plurality of terminals of the first semiconductor chip.   A first semiconductor chip, and a second semiconductor chip in which a plurality of RC filters each having a capacitance C and a resistance R and having different time constants are formed on a semiconductor substrate, the first semiconductor chip and the second semiconductor chip A semiconductor device capable of stacking and selecting and electrically connecting the RC filter of the second semiconductor chip to a terminal of the first semiconductor chip.   A first semiconductor chip and a second semiconductor chip covered with a conductor are provided, the first semiconductor chip and the second semiconductor chip are stacked, and the conductive layer on the second semiconductor chip is stacked. A semiconductor device in which members are electrically grounded.   The second semiconductor chip includes a first semiconductor chip and an input circuit that matches an input specification of the input terminal of the first semiconductor chip, the first semiconductor chip and the second semiconductor chip are stacked, A semiconductor device in which the input circuit of the second semiconductor chip is electrically connected to an input terminal of the first semiconductor chip.   A first semiconductor chip; and a second semiconductor chip having a plurality of input circuits having different specifications connectable to an input terminal of the first semiconductor chip, the first semiconductor chip and the second semiconductor A semiconductor device in which chips are stacked and selected from the plurality of input circuits of the second semiconductor chip and electrically connected to the input terminal of the first semiconductor chip.   A second semiconductor chip having a first semiconductor chip, an input / output circuit operating at a potential different from that of the first semiconductor chip, and a level shifter circuit for level shifting the potential to the potential of the first semiconductor chip; A semiconductor device in which the first semiconductor chip and the second semiconductor chip are stacked, and the level shifter circuit is electrically connected to the first semiconductor chip.   A first semiconductor chip having a pad portion for electrically connecting input / output signals and a second semiconductor chip having a pad portion and an input / output circuit are provided, and the first semiconductor chip and the second semiconductor chip are provided. A semiconductor device in which the semiconductor chips are stacked and the input / output circuit is electrically connected to the pad portion of the first semiconductor chip.   A first semiconductor chip having a power supply pad; and a second semiconductor chip in which a plurality of power supply pads are formed on a semiconductor substrate and all of the power supply pads are electrically connected. The first semiconductor chip and the second semiconductor chip A semiconductor device in which chips are stacked and the power supply pad of the second semiconductor chip and the power supply pad of the first semiconductor chip are electrically connected.   A first semiconductor chip; and a second semiconductor chip in which an oscillation circuit or a damping resistor / capacitor is formed on a semiconductor substrate; the first semiconductor chip and the second semiconductor chip are stacked; and the oscillation circuit Alternatively, a semiconductor device in which a damping element is electrically connected to the first semiconductor chip.   A first semiconductor chip and a second semiconductor chip in which a surge absorbing transistor is formed on a semiconductor substrate, the first semiconductor chip and the second semiconductor chip are stacked, and the surge absorbing transistor is connected to the first semiconductor chip. Semiconductor device electrically connected to the semiconductor chip.

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