JP2006004686A - Plasma processing method and device - Google Patents

Abstract

A plasma processing method and apparatus capable of realizing high-speed processing under a relatively high pressure of 0.1 to 100 atm.
A first electrode and a second electrode are disposed in parallel, and an object to be processed is disposed on the second electrode. The first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 via the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 via the second pipe 9. Is supplied with SF ₆ gas as a reactive gas. Helium gas is ejected from the first gas ejection port 12 and SF ₆ gas is ejected from the second gas ejection port 13, and the high-frequency power source 11 is operated to apply a voltage between the first electrode and the second electrode. Then, planar plasma was generated between the first electrode 1 and the workpiece 3 and the surface of the workpiece could be etched at a high speed.
[Selection] Figure 1

Description

  The present invention relates to a plasma processing method and apparatus, and more particularly to a plasma processing method and apparatus capable of realizing high-speed processing under a relatively high pressure of 0.1 to 100 atmospheres.

  Conventionally, a method of generating glow discharge plasma under low pressure conditions to perform surface modification, thin film deposition, etching, and the like has been put into practical use. However, the treatment under low-pressure conditions is industrially disadvantageous because it requires a vacuum pump and a robust sealed container, and is therefore only applied to expensive products such as semiconductors and high-performance electronic components. For this reason, a method of generating discharge plasma under a pressure near atmospheric pressure has been proposed.

  As a method for uniformly processing a large area, a method as shown in FIG. 18 has been devised. In this method, a porous body is provided on the surface where the vent hole is opened so that the gas from the vent hole enters the plasma through the porous body, and the gas outlet (vent hole) is opened. A porous body is provided on the surface to be processed, and the gas from the vent hole enters the plasma through the porous body. The plasma processing apparatus shown in FIG. 18 includes a reaction tank 31, and a gas inlet 41 and a gas outlet 42 are provided in the tank wall. Two flat plates of an upper electrode 32 and a lower electrode 33 are provided in the tank. The parallel electrodes are arranged in parallel so as to face each other at a predetermined distance. A solid dielectric 36 is placed on the surface of the lower electrode 33. The upper electrode 32 is connected to the output of the AC power supply 35, and the lower electrode 33 is grounded.

  A flow path 45 is provided inside the upper electrode 32, and a number of vent holes 46 are opened on the surface of the upper electrode 32 facing the lower electrode 33. A porous dielectric 50 as a porous body is disposed on the surface of the upper electrode 32 where the vent hole 46 opens. As a result, the gas entering from the gas inlet 41 passes through the porous dielectric 530 from the vent hole 46 and is introduced into the plasma. A heater 49 is provided inside the lower electrode 33 so that the temperature of the workpiece 34 can be freely adjusted. In the case of this apparatus, the upper electrode 32 includes a front plate 32 a provided with a large number of air holes and a back plate 32 b for the gas flow path 45.

  At the time of processing, first, helium gas serving as plasma generation gas and carrier gas is introduced from the gas inlet 41 and the AC power supply 35 is operated to start supply of AC power. Then, a glow discharge is generated between the electrodes 32 and 33 to generate plasma, and thereafter, an appropriate type of reaction gas that participates in the reaction is mixed into the helium gas. Then, since the reaction gas passes through the porous dielectric 50 through the vent hole 46 together with the helium gas and is introduced into the plasma, the plasma becomes reactive plasma. The surface of the workpiece 34 is treated with this reactive plasma.

  In addition, as shown in FIG. 19, a plasma obtained by homogenizing a plurality of streamers generated in a cylindrical container at atmospheric pressure or in the vicinity thereof in a direction perpendicular to the axial direction of the cylindrical container. A method for treating a workpiece has also been devised. The plasma processing apparatus includes a cylindrical container 51 in which a discharge space is defined, a pair of electrodes 52 and 53 disposed around the cylindrical container, and a gas supply for supplying a streamer generating gas into the cylindrical container. A unit (not shown), a power source 54 for generating a plurality of streamers in a cylindrical container by applying an AC or pulse voltage between electrodes, and a plasma homogenization for uniforming a plurality of streamers in a discharge space 57 Means.

The cylindrical container 51 can be formed of a high-melting-point insulating material (dielectric material) such as a vitreous material such as quartz glass, alumina, yttria, or zirconium, or a ceramic material. A cylindrical container 51 in FIG. 19A has a rectangular cylindrical shape having a gas inlet 60 at the upper end and a plasma outlet 62 at the lower end, and a pair of front wall 63 and rear wall 64 extending in parallel with each other. , And a pair of side walls 65 extending in parallel to each other. As shown in FIG. 19B, the cross section perpendicular to the axial direction of the cylindrical container 51 is a rectangular shape having a length (L) and a width (W). In order to obtain a cylindrical container 51 having a horizontally long cross section, the length (L) is designed to be larger than the width (W). In FIG. 19B, “S _W ” is an internal width dimension of the cylindrical container and is called a slit width. “S _L ” is an internal length dimension of the cylindrical container (= inner dimension in the horizontal direction of the horizontal cross section of the cylindrical container), and is called a slit length. “H” is the height dimension of the cylindrical container. An inner space surrounded by the front wall 63, the rear wall 64, and the side wall 65 of the cylindrical container 51 is used as the discharge space 57. The streamer generated gas is introduced into the cylindrical container 51 through the gas inlet 60 and is ejected to the outside from the plasma outlet 62.
Japanese Patent No. 2837993 JP 2002-93768 A

  However, the conventional plasma generation method has a problem that the processing speed is low.

  For example, in the method shown in FIG. 18, after a reactive gas is mixed with an inert gas such as helium, the reactive gas is supplied from the gas ejection port 46 to the surface of the workpiece 34 through the porous dielectric 50. When the concentration of the reactive gas is low, the amount of reactive radicals produced is small and the processing speed is low. Conversely, when the concentration of the reactive gas is increased, the plasma density is lowered and the processing speed is lowered, or the plasma is not ignited.

  Further, in the method shown in FIG. 19, since plasma is generated in the discharge space 57 that is a space away from the workpiece 58, the concentration of reactive radicals is small in the vicinity of the workpiece 58 and the processing speed is low. . In addition, since processing of a large area is performed by scanning linear plasma, the processing speed is low for an object to be processed having a large area.

  In view of the above-described conventional problems, an object of the present invention is to provide a plasma processing method and apparatus capable of realizing high-speed processing under a relatively high pressure of 0.1 to 100 atm.

  In the plasma processing method of the first invention of the present application, a plasma is generated by applying a voltage between the first electrode and the second electrode on which the object to be processed is placed to generate a planar plasma and processing the surface of the object to be processed. A processing method comprising mainly inert gas on a surface of an object to be processed from a plurality of first gas outlets provided on a first electrode or a dielectric disposed on the object to be processed side of the surface of the first electrode. And a reactive gas is contained on the surface of the object to be processed from a plurality of second gas outlets provided on the first electrode or a dielectric disposed on the object to be processed side of the surface of the first electrode. It is characterized by ejecting gas.

  With such a configuration, high-speed processing can be realized under a relatively high pressure of 0.1 to 100 atm.

  In the plasma processing method of the second invention of the present application, a plasma is generated by applying a voltage between the first electrode and the second electrode on which the object to be processed is placed to generate a planar plasma and processing the surface of the object to be processed. A treatment method comprising a gas mainly composed of an inert gas on a surface of an object to be processed from a plurality of first gas outlets provided in a porous conductor disposed on the object to be processed side of the surface of the first electrode. And a gas containing reactive gas on the surface of the object to be processed from a plurality of second gas outlets provided on the first electrode or a dielectric disposed on the object to be processed side of the surface of the first electrode. It is made to eject.

  With such a configuration, high-speed processing can be realized under a relatively high pressure of 0.1 to 100 atm.

  In the plasma processing method of the first invention of the present application, it is preferable that the dielectric disposed on the workpiece side of the surface of the first electrode is a porous dielectric. With such a configuration, generation of arc discharge (spark) can be effectively suppressed.

  In the plasma processing method of the second invention of the present application, it is preferable that the dielectric disposed on the workpiece side of the surface of the first electrode is a porous dielectric. With such a configuration, generation of arc discharge (spark) can be effectively suppressed.

  In the plasma processing method of the first or second invention of the present application, preferably, a first gas reservoir filled with a gas to be ejected from the first gas ejection port in the first electrode, a second in the first electrode, It is desirable to provide a second gas reservoir that is filled with gas to be ejected from the gas ejection port. With such a configuration, gas ejection is made uniform.

  Preferably, the first gas reservoir and the second gas reservoir are surrounded by a conductor having substantially the same potential as that of the first electrode. With such a configuration, discharge in the gas reservoir can be prevented.

  Preferably, the flow of gas ejected from the first gas ejection port is substantially perpendicular to the surface of the workpiece in the vicinity of the first gas ejection port. With such a configuration, the uniformity of processing can be improved.

  Preferably, the first gas outlet and the second gas outlet are preferably arranged in a staggered manner or alternately with respect to the surface of the object to be processed. With such a configuration, the uniformity of processing can be improved.

  Preferably, it is desirable to vibrate the first electrode or the second electrode while keeping the first electrode and the second electrode parallel. Alternatively, the first electrode or the second electrode may be rotated while keeping the first electrode and the second electrode parallel. With such a configuration, the uniformity of processing can be improved.

  In the plasma processing method of the third invention of the present application, a plasma is generated by generating a planar plasma by applying a voltage between the first electrode and the second electrode on which the workpiece is placed, and processing the surface of the workpiece. In the processing method, a line segment connecting an arbitrary point of the conductor portion having substantially the same potential as the first electrode and an arbitrary point of the object to be processed is disposed on the object to be processed side of the surface of the first electrode. It passes only inside both the gas flow path provided in the first dielectric and the gas flow path provided in the second dielectric disposed on the workpiece side of the surface of the first dielectric. It is characterized by not being configured.

  With such a configuration, high-speed processing can be realized under a relatively high pressure of 0.1 to 100 atm.

  A plasma processing apparatus according to a fourth invention of the present application includes a first electrode, a second electrode for placing an object to be processed, a power source for applying a voltage to the first electrode or the second electrode, A plurality of first gas jets provided in a dielectric disposed on the workpiece side of the electrode or the surface of the first electrode, and a dielectric disposed on the workpiece side of the surface of the first electrode or the first electrode And a plurality of second gas outlets provided on the body.

  According to a fifth aspect of the present invention, there is provided a plasma processing apparatus, comprising: a first electrode; a second electrode for placing an object to be processed; a power source for applying a voltage to the first electrode or the second electrode; A plurality of first gas outlets provided in a porous conductor disposed on the workpiece side of the surface of the electrode, and a dielectric disposed on the workpiece side of the surface of the first electrode or the first electrode. A plurality of second gas outlets provided are provided.

  In the plasma processing apparatus of the fourth invention of the present application, it is preferable that the dielectric disposed on the object to be processed side of the surface of the first electrode is a porous dielectric. With such a configuration, generation of arc discharge (spark) can be effectively suppressed.

  In the plasma processing apparatus of the fifth invention of the present application, it is preferable that the dielectric disposed on the object to be processed side of the surface of the first electrode is a porous dielectric. With such a configuration, generation of arc discharge (spark) can be effectively suppressed.

  In the plasma processing apparatus of the fourth or fifth invention of the present application, preferably, a first gas reservoir filled with a gas to be ejected from the first gas ejection port in the first electrode, and a second in the first electrode. It is desirable to provide a second gas reservoir that is filled with gas to be ejected from the gas ejection port. With such a configuration, gas ejection is made uniform.

  Preferably, the first gas reservoir and the second gas reservoir are surrounded by a conductor having substantially the same potential as that of the first electrode. With such a configuration, discharge in the gas reservoir can be prevented.

  Preferably, the gas flow ejected from the first gas ejection port is configured to be substantially perpendicular to the surface of the workpiece in the vicinity of the first gas ejection port.

  With such a configuration, the uniformity of processing can be improved.

  Preferably, the first gas outlet and the second gas outlet are preferably arranged in a staggered manner or alternately with respect to the surface of the object to be processed. With such a configuration, the uniformity of processing can be improved.

  Preferably, a mechanism for vibrating the first electrode or the second electrode while keeping the first electrode and the second electrode parallel is desirable. Alternatively, the first electrode or the second electrode may be rotated while keeping the first electrode and the second electrode parallel. With such a configuration, the uniformity of processing can be improved.

  A plasma processing apparatus according to a sixth invention of the present application includes: a first electrode; a second electrode for placing an object to be processed; a power source for applying a voltage to the first electrode or the second electrode; A plasma processing apparatus comprising: a first dielectric disposed on a workpiece side of a surface of an electrode; and a second dielectric disposed on a workpiece side of a surface of the first dielectric, A line segment connecting an arbitrary point of the conductor portion having substantially the same potential as the electrode and an arbitrary point of the second electrode is provided in the gas passage provided in the first dielectric and in the second dielectric. Further, the gas passage is configured not to pass only inside both of the gas flow paths.

  With such a configuration, high-speed processing can be realized under a relatively high pressure of 0.1 to 100 atm.

  As described above, according to the plasma processing method and apparatus of the present invention, a plasma processing method and apparatus capable of realizing high-speed processing under a relatively high pressure of 0.1 to 100 atmospheres can be realized.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
Hereinafter, Embodiment 1 of the present invention will be described with reference to FIG.
FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus used in Embodiment 1 of the present invention. In FIG. 1, a first electrode 1 and a second electrode 2 are arranged in parallel, and a workpiece 3 is arranged on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 via the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 via the second pipe 9. Is supplied with SF ₆ gas as a reactive gas.

  A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2.

Helium gas filled in the first gas reservoir 7 is ejected to the surface of the object 3 from the plurality of first gas outlets 12 arranged on the object side of the surface of the first electrode 1, and the second The SF ₆ gas filled in the gas reservoir 10 is jetted to the surface of the workpiece 3 from the plurality of second gas jets 13 arranged on the workpiece side of the surface of the first electrode 1, and the high frequency power source 11. When a voltage is applied between the first electrode and the second electrode by operating, a planar plasma is generated between the first electrode 1 and the workpiece 3 so that the surface of the workpiece can be treated.

As an example, the flow rate of helium gas is 15 SLM, the flow rate of SF ₆ gas is 3 SLM, and a high frequency voltage of 13.56 MHz is applied to the second electrode 2 with respect to a 2 m square workpiece 3 under atmospheric pressure (power) When the silicon thin film on the workpiece 3 was etched, a high etching rate of 32 μm / min was obtained.

For comparison, there is no distinction between the first gas outlet and the second gas outlet, and a gas in which helium gas 15 SLM and SF ₆ gas 3 SLM are mixed in advance is ejected from all the gas outlets to perform the same operation (2 kW). When high frequency voltage was applied, no plasma was generated. This is thought to be because the concentration of helium gas is less than the concentration at which stable glow discharge is likely to occur in the vicinity of atmospheric pressure at any location in the discharge space. When the power was increased to 5 kW, plasma was generated. At this time, the etching rate of the silicon thin film was as low as 2.4 μm / min.

As described above, when helium gas is ejected from the first gas ejection port and SF ₆ gas is ejected from the second gas ejection port, the plasma can be generated with a small electric power and the high-speed processing can be performed. As the helium concentration is non-uniform in the discharge space between the first electrode 1 and the workpiece 3, a helium concentration capable of generating a stable glow discharge locally near atmospheric pressure has been realized. Then, due to the diffusion of metastable atoms of the relatively long-lived helium generated there, a stable glow discharge is generated even in a region where the concentration of helium gas should be insufficient and plasma should not be generated. It is conceivable that the reactive radicals of the density (F radicals) could be distributed.

  As is clear from FIG. 1, the first gas reservoir 7 and the second gas reservoir 10 are surrounded by a conductor (the first electrode 1 and the back plate 4) having substantially the same potential as the first electrode 1. Yes. With such a configuration, the occurrence of discharge in the gas reservoirs 7 and 10 can be effectively prevented. This is because if the gas reservoirs 7 and 10 are surrounded by a conductor having the same potential, a high electric field is not generated in the gas reservoirs 7 and 10.

(Embodiment 2)
Next, Embodiment 2 of the present invention will be described with reference to FIG.

FIG. 2 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus used in Embodiment 2 of the present invention. In FIG. 2, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 via the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 via the second pipe 9. Is supplied with SF ₆ gas as a reactive gas.

A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2. The helium gas filled in the first gas reservoir 7 is provided on the porous dielectric 14 disposed on the workpiece side of the surface of the first electrode 1 through the gas flow path provided in the first electrode 1. The SF ₆ gas filled in the second gas reservoir 10 is ejected from the plurality of first gas ejection ports 12 to the surface of the workpiece 3 through the gas flow path provided in the first electrode 1. The high-frequency power source 11 is operated while being ejected from the plurality of second gas ejection ports 13 provided in the porous dielectric 14 disposed on the surface of the first electrode 1 on the surface of the object to be processed 3. When a voltage is applied between the first electrode and the second electrode, planar plasma is generated between the first electrode 1 and the object to be processed 3, and the surface of the object to be processed can be processed.

  By using the porous dielectric 14, a dielectric barrier effect and an effect of suppressing the generation of a local high electric field are generated, so that a higher voltage than that in the first embodiment can be applied to the electrode 2. A higher processing speed can be obtained.

(Embodiment 3)
Next, Embodiment 3 of the present invention will be described with reference to FIG.

FIG. 3 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus used in Embodiment 3 of the present invention. In FIG. 3, the first electrode 1 and the second electrode 2 are arranged in parallel, and the workpiece 3 is arranged on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded through the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 through the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 through the second pipe 9. Is supplied with SF ₆ gas as a reactive gas. A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2.

The helium gas filled in the first gas reservoir 7 is provided on the dielectric 14 disposed on the workpiece side on the surface of the first electrode 1 through the gas flow path provided in the first electrode 1. The SF ₆ gas filled in the second gas reservoir 10 is ejected from the plurality of first gas ejection ports 12 to the surface of the workpiece 3 and the second gas reservoir 10 is passed through the gas flow path provided in the first electrode 1. The first high-frequency power source 11 is operated to eject the first high-frequency power source 11 from the plurality of second gas jets 13 provided on the dielectric 14 disposed on the workpiece side of the surface of the one electrode 1 while being ejected to the surface of the workpiece 3. When a voltage is applied between the electrode and the second electrode, planar plasma is generated between the first electrode 1 and the object to be processed 3, and the surface of the object to be processed can be processed.

The dielectric 14 is fitted with a porous dielectric block 14-2 at a position corresponding to the gas jets 12 and 13, and the dielectric barrier effect and the effect of suppressing the generation of a local high electric field. Therefore, a higher voltage than that in the first embodiment can be applied to the electrode 2, and a higher processing speed can be obtained. Further, since the individual dielectric blocks 14-2 are independent from each other and the individual dielectric blocks 14-2 are isolated by the dielectric 14 as a base, the gas jets 12 and 13 are provided. There is an advantage that the helium gas and the SF ₆ gas are not mixed until the gas is ejected.

(Embodiment 4)
Next, a fourth embodiment of the present invention will be described with reference to FIG.

FIG. 4 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus used in Embodiment 4 of the present invention. In FIG. 4, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 through the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 through the second pipe 9. Is supplied with SF ₆ gas as a reactive gas. A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2.

The helium gas filled in the first gas reservoir 7 is provided on the dielectric 14 disposed on the workpiece side on the surface of the first electrode 1 through the gas flow path provided in the first electrode 1. The SF ₆ gas filled in the second gas reservoir 10 is ejected from the plurality of first gas ejection ports 12 to the surface of the workpiece 3 and the second gas reservoir 10 is passed through the gas flow path provided in the first electrode 1. The first high-frequency power source 11 is operated to eject the first high-frequency power source 11 from the plurality of second gas jets 13 provided on the dielectric 14 disposed on the workpiece side of the surface of the one electrode 1 while being ejected to the surface of the workpiece 3. When a voltage is applied between the electrode and the second electrode, planar plasma is generated between the first electrode 1 and the object to be processed 3, and the surface of the object to be processed can be processed.

  In this example, since the opposing surface of the workpiece 3 is made of a dielectric, a dielectric barrier effect can be obtained, and a higher voltage than that in the first embodiment can be applied to the electrode 2, resulting in a higher processing speed. Can be obtained.

(Embodiment 5)
Next, a fifth embodiment of the present invention will be described with reference to FIG.

FIG. 5 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus used in Embodiment 5 of the present invention. In FIG. 5, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 through the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 through the second pipe 9. Is supplied with SF ₆ gas as a reactive gas. A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2.

The helium gas filled in the first gas reservoir 7 is provided on the dielectric 14 disposed on the workpiece side on the surface of the first electrode 1 through the gas flow path provided in the first electrode 1. The SF ₆ gas filled in the second gas reservoir 10 is ejected from the plurality of first gas ejection ports 12 to the surface of the workpiece 3 and the second gas reservoir 10 is passed through the gas flow path provided in the first electrode 1. The first high-frequency power source 11 is operated to eject the first high-frequency power source 11 from the plurality of second gas jets 13 provided on the dielectric 14 disposed on the workpiece side of the surface of the one electrode 1 while being ejected to the surface of the workpiece 3. When a voltage is applied between the electrode and the second electrode, planar plasma is generated between the first electrode 1 and the object to be processed 3, and the surface of the object to be processed can be processed.

The dielectric 14 is fitted with a porous conductor block 15 at a position corresponding to the first gas jet 12 and a porous dielectric block 14-2 is fitted at a position corresponding to the second gas jet 13. It is. With such a configuration, the electric field is strengthened in the vicinity of the first gas jet outlet where the concentration of helium gas is high, the generation of a local high electric field is suppressed, and the dielectric barrier is provided in the vicinity of the second gas jet outlet 13. By exhibiting the effect, a higher voltage than that in the first embodiment can be applied to the electrode 2 and a higher processing speed can be obtained. Further, the individual conductor block 15 and the dielectric block 14-2 are independent from each other, and the individual conductor block 15 and the dielectric block 14-2 are separated by the base dielectric 14. Therefore, there is an advantage that the helium gas and the SF ₆ gas are not mixed until the gas is ejected from the gas ejection ports 12 and 13.

(Embodiment 6)
Next, a sixth embodiment of the present invention will be described with reference to FIG.

FIG. 6 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus used in Embodiment 6 of the present invention. In FIG. 6, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 through the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 through the second pipe 9. Is supplied with SF ₆ gas as a reactive gas. A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2.

The helium gas filled in the first gas reservoir 7 is provided on the dielectric 14 disposed on the workpiece side on the surface of the first electrode 1 through the gas flow path provided in the first electrode 1. The SF ₆ gas filled in the second gas reservoir 10 is ejected from the plurality of first gas ejection ports 12 to the surface of the workpiece 3 and the second gas reservoir 10 is passed through the gas flow path provided in the first electrode 1. The first high-frequency power source 11 is operated to eject the first high-frequency power source 11 from the plurality of second gas jets 13 provided on the dielectric 14 disposed on the workpiece side of the surface of the one electrode 1 while being ejected to the surface of the workpiece 3. When a voltage is applied between the electrode and the second electrode, planar plasma is generated between the first electrode 1 and the object to be processed 3, and the surface of the object to be processed can be processed.

Note that a porous conductor block 15 is fitted in the dielectric 14 at a position corresponding to the first gas ejection port 12. With such a configuration, the electric field is strengthened in the vicinity of the first gas jet outlet where the concentration of helium gas is high, the generation of a local high electric field is suppressed, and the dielectric barrier is provided in the vicinity of the second gas jet outlet 13. By exhibiting the effect, a higher voltage than that in the first embodiment can be applied to the electrode 2, and a higher processing speed can be obtained. In addition, since the individual conductor blocks 15 are independent from each other and the individual conductor blocks 15 are separated from each other by the dielectric 14 serving as a base, gas flows from the gas outlets 12 and 13. There is an advantage that the helium gas and the SF ₆ gas are not mixed until jetting.

  Unlike Embodiment 5, the porous dielectric block 14-2 is not fitted at a position corresponding to the second gas outlet 13, but the helium gas concentration is small in the vicinity of the second gas outlet 13. Therefore, arc discharge (spark) hardly occurs even when a high electric field is generated, and such a simple configuration is also possible.

(Embodiment 7)
Next, a seventh embodiment of the present invention will be described with reference to FIG.

FIG. 7 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus used in Embodiment 7 of the present invention. In FIG. 7, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 via the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 via the second pipe 9. Is supplied with SF ₆ gas as a reactive gas.

A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2. The helium gas filled in the first gas reservoir 7 is processed through a gas flow path provided in the first electrode 1 from a plurality of first gas outlets 12 provided on the surface of the first electrode 1. 3, and the SF ₆ gas filled in the second gas reservoir 10 is jetted from the plurality of second gas jets 13 provided in the first electrode 1 to the surface of the workpiece 3. When a voltage is applied between the first electrode and the second electrode by operating the high-frequency power source 11, a planar plasma is generated between the first electrode 1 and the object to be processed 3, and the surface of the object to be processed is processed. Can do.

A porous conductor block 15 is fitted into the first electrode 1 at a position corresponding to the first gas outlet 12. With such a configuration, the electric field is strengthened in the vicinity of the first gas jet outlet where the concentration of helium gas is high, and the generation of a local high electric field is suppressed, so that a higher voltage than that in the first embodiment is applied to the electrode 2. And higher processing speed can be obtained. In addition, since the individual conductor blocks 15 are independent from each other and the individual conductor blocks 15 are separated from each other by the dielectric 14 serving as a base, gas flows from the gas outlets 12 and 13. There is an advantage that the helium gas and the SF ₆ gas are not mixed until jetting. Further, unlike the sixth embodiment, the entire surface facing the object to be processed 3 is a conductor, so that higher density plasma can be generated.

(Embodiment 8)
Next, an eighth embodiment of the present invention will be described with reference to FIGS.

FIG. 8 is a sectional view showing a schematic configuration of the plasma processing apparatus used in the eighth embodiment of the present invention. In FIG. 8, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 via the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 via the second pipe 9. Is supplied with SF ₆ gas as a reactive gas.

A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2. The helium gas filled in the first gas reservoir 7 is provided in the gas flow path provided in the first electrode 1 and the first dielectric 14 disposed on the workpiece side on the surface of the first electrode 1. The surface of the object to be processed 3 from the plurality of first gas jets 12 provided in the second dielectric 16 disposed on the object to be processed side of the surface of the first dielectric 14 via the porous dielectric block 17. The SF ₆ gas filled in the second gas reservoir 10 is injected into the gas flow path provided in the first electrode 1 and the first dielectric disposed on the workpiece side of the surface of the first electrode 1. From the plurality of second gas jets 13 provided in the second dielectric 16 disposed on the workpiece side of the surface of the first dielectric 14 via the porous dielectric block 17 provided in the body 14. While ejecting to the surface of the workpiece 3, the high-frequency power source 11 is operated so that it is between the first electrode and the second electrode When a voltage is applied, it is possible to plasma planar between the first electrode 1 and the object to be treated 3 is generated, to treat the surface of the object to be treated.

The first dielectric 14 has a porous dielectric block 17 fitted at a position corresponding to the gas ejection ports 12 and 13, and has an effect of suppressing the generation of a local high electric field. A higher voltage than that in the first mode can be applied to the electrode 2, and a higher processing speed can be obtained. Further, since the individual dielectric blocks 17 are independent from each other and are separated from each other by the first dielectric 14 serving as a base, the gas is discharged from the gas outlets 12 and 13. There is an advantage that the helium gas and the SF ₆ gas are not mixed until the gas is ejected.

  Further, the flow of the gas ejected from the first gas ejection port 12 is configured to be substantially perpendicular to the surface of the object to be processed in the vicinity of the first gas ejection port 12. With such a configuration, a portion having a high concentration of helium gas is present in the vicinity of the workpiece 3, so that high density plasma can be generated near the surface of the workpiece 3.

  Here, the first gas outlet 12 and the second gas outlet 13 are arranged in a staggered manner or alternately with respect to the surface of the object to be processed, but a specific configuration for realizing this. The planar structure of each component of the back plate 4, the first electrode 1, the first dielectric 14, and the second dielectric 16 will be described below.

  FIG. 9 is a plan view of a cross section obtained by cutting the back plate 4 at a portion where there is a gas reservoir. The white portions indicate the first gas reservoir 7 and the second gas reservoir 10. Comb-shaped gas reservoirs that are intertwined with each other are formed. The first pipe 6 is arranged to be connected to one of the first gas reservoirs 7, and the second pipe 9 is arranged to be connected to one of the second gas reservoirs 10.

  FIG. 10 is a plan view of the first electrode 1. A white portion is a gas flow path. A large number of cylindrical through holes (gas flow paths) are provided. The gas flow paths adjacent to each other correspond to a portion where the first gas reservoir is disposed and a portion where the second gas reservoir is disposed. That is, the flow path for flowing a gas mainly composed of an inert gas and the flow path for flowing a gas mainly composed of a reactive gas are arranged in a staggered manner or alternately with respect to the surface of the object to be processed.

  FIG. 11 is a plan view of the first dielectric 14. A porous dielectric block 17 is fitted into a large number of through holes provided in the first dielectric 14. The positions of the multiple gas flow paths provided in the first electrode 1 correspond to the positions of the multiple through holes provided in the first dielectric 14, that is, the position of the porous dielectric block 17. The position of many gas flow paths provided in the first electrode 1 when the 1 electrode 1 and the first dielectric 14 are overlapped, and the position of many through holes provided in the first dielectric 14, that is, The positions of the porous dielectric blocks 17 coincide.

  FIG. 12 is a plan view of the second dielectric 16. The second dielectric 16 is provided with a number of through holes, which form the first gas jet 12 and the second gas jet 13. The positions of many gas flow paths provided in the first electrode 1 correspond to the positions of many through holes provided in the second dielectric 16, and the first electrode 1 and the second dielectric 16 are overlapped. When combined, the positions of many gas flow paths provided in the first electrode 1 coincide with the positions of many through holes provided in the second dielectric 16.

  A number of through holes provided in the second dielectric, that is, a number of first gas outlets and second gas outlets may be linear as shown in FIG. However, it is preferable that the 1st gas ejection port 12 and the 2nd gas ejection port 13 are alternately arrange | positioned with respect to the surface of a to-be-processed object.

(Embodiment 9)
Next, Embodiment 9 of the present invention will be described with reference to FIG.

FIG. 14 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus used in Embodiment 9 of the present invention. In FIG. 14, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 through the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 through the second pipe 9. Is supplied with SF ₆ gas as a reactive gas.

A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2. The helium gas filled in the first gas reservoir 7 is provided in the gas flow path provided in the first electrode 1 and the first dielectric 14 disposed on the workpiece side on the surface of the first electrode 1. The surface of the object to be processed 3 from the plurality of first gas jets 12 provided in the second dielectric 16 disposed on the object to be processed side of the surface of the first dielectric 14 via the porous dielectric block 17. The SF ₆ gas filled in the second gas reservoir 10 is injected into the gas flow path provided in the first electrode 1 and the first dielectric disposed on the workpiece side of the surface of the first electrode 1. From the plurality of second gas jets 13 provided in the second dielectric 16 disposed on the workpiece side of the surface of the first dielectric 14 via the porous dielectric block 17 provided in the body 14. While ejecting to the surface of the workpiece 3, the high-frequency power source 11 is operated so that it is between the first electrode and the second electrode When a voltage is applied, it is possible to plasma planar between the first electrode 1 and the object to be treated 3 is generated, to treat the surface of the object to be treated.

The first dielectric 14 has a porous dielectric block 17 fitted at a position corresponding to the gas ejection ports 12 and 13, and has an effect of suppressing the generation of a local high electric field. A higher voltage than that in the first mode can be applied to the electrode 2, and a higher processing speed can be obtained. Further, since the individual dielectric blocks 17 are independent from each other and are separated from each other by the first dielectric 14 serving as a base, the gas is discharged from the gas outlets 12 and 13. There is an advantage that the helium gas and the SF ₆ gas are not mixed until the gas is ejected.

  Further, the flow of the gas ejected from the first gas ejection port 12 is configured to be substantially perpendicular to the surface of the object to be processed in the vicinity of the first gas ejection port 12. With such a configuration, a portion having a high concentration of helium gas is present in the vicinity of the workpiece 3, so that high density plasma can be generated near the surface of the workpiece 3.

  The second electrode 2 is placed on a vibration table 18 as a vibration mechanism, and the vibration table 18 can adjust the amplitude and period of vibration by a controller 19. When the plasma processing is performed, the vibrating table 18 is operated to vibrate the second electrode while keeping the first electrode and the second electrode parallel to each other, whereby the first gas outlet 12 and the second gas outlet 13. However, it is possible to effectively reduce unevenness in processing due to staggered or alternating arrangement with respect to the surface of the object to be processed, thereby enabling more uniform plasma processing.

  In this case, the amplitude of vibration is preferably 50% or more of the typical pitch of the first gas outlet 12 and the second gas outlet. If it is less than 50% of the pitch, the process may not be evenly uniform. The amplitude may be large, but when the size of the workpiece 3 and the size of the first electrode 1 are substantially the same, the pitch is preferably 200% or less. This is because if the pitch is too large, the proportion of useless plasma that does not contribute to the processing increases. The vibration is preferably performed in the xy direction, that is, in the two axial directions in order to realize a more uniform process.

  When the size of the first electrode 1 is smaller than that of the object to be processed 3, the first electrode is scanned on the object 3 to be processed over the entire surface of the object to be processed 3. It is not necessary to vibrate in the direction, and it is sufficient to vibrate in a direction perpendicular to the scanning direction.

  In addition, the period of vibration is preferably the same as the time required for the plasma treatment at the maximum and about 0.1 seconds at the minimum. If the period of vibration is longer than the time required for the plasma processing, the processing may not be evenly uniform. If the vibration period is less than 0.1 seconds, not only an expensive high-speed shaking table is required, but also mechanical parts such as bolts may be loosened.

  Needless to say, the first electrode may be vibrated while keeping the first electrode and the second electrode parallel.

(Embodiment 10)
Next, a tenth embodiment of the present invention will be described with reference to FIG.

FIG. 15 is a sectional view showing a schematic configuration of the plasma processing apparatus used in the tenth embodiment of the present invention. In FIG. 15, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 via the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 via the second pipe 9. Is supplied with SF ₆ gas as a reactive gas.

A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2. The helium gas filled in the first gas reservoir 7 is provided in the gas flow path provided in the first electrode 1 and the first dielectric 14 disposed on the workpiece side on the surface of the first electrode 1. The surface of the object to be processed 3 from the plurality of first gas jets 12 provided in the second dielectric 16 disposed on the object to be processed side of the surface of the first dielectric 14 via the porous dielectric block 17. The SF ₆ gas filled in the second gas reservoir 10 is injected into the gas flow path provided in the first electrode 1 and the first dielectric disposed on the workpiece side of the surface of the first electrode 1. From the plurality of second gas jets 13 provided in the second dielectric 16 disposed on the workpiece side of the surface of the first dielectric 14 via the porous dielectric block 17 provided in the body 14. While ejecting to the surface of the workpiece 3, the high-frequency power source 11 is operated so that it is between the first electrode and the second electrode When a voltage is applied, it is possible to plasma planar between the first electrode 1 and the object to be treated 3 is generated, to treat the surface of the object to be treated.

The first dielectric 14 has a porous dielectric block 17 fitted at a position corresponding to the gas ejection ports 12 and 13, and has an effect of suppressing the generation of a local high electric field. A higher voltage than that in the first mode can be applied to the electrode 2, and a higher processing speed can be obtained. Further, since the individual dielectric blocks 17 are independent from each other and are separated from each other by the first dielectric 14 serving as a base, the gas is discharged from the gas outlets 12 and 13. There is an advantage that the helium gas and the SF ₆ gas are not mixed until the gas is ejected.

  Further, the flow of the gas ejected from the first gas ejection port 12 is configured to be substantially perpendicular to the surface of the object to be processed in the vicinity of the first gas ejection port 12. With such a configuration, a portion having a high concentration of helium gas is present in the vicinity of the workpiece 3, so that high density plasma can be generated near the surface of the workpiece 3.

  The second electrode 2 is placed on a turntable 20 as a rotation mechanism, and the turntable 20 is connected to a motor 22 by a support column 21 so that the turntable 20 can be rotated by the rotation of the motor 22. Yes. When the plasma processing is performed, the rotary table 20 is operated to rotate the second electrode while keeping the first electrode and the second electrode parallel to each other, so that the first gas outlet 12 and the second gas outlet 13 are rotated. However, it is possible to effectively reduce unevenness in processing due to staggered or alternating arrangement with respect to the surface of the object to be processed, thereby enabling more uniform plasma processing. In this case, the period of rotation is preferably the same as the time required for the plasma treatment at the maximum and about 0.001 seconds at the minimum.

  If the rotation period is longer than the time required for the plasma processing, the processing may not be uniform. If the rotation period is less than 0.001 seconds, not only an expensive high-speed turntable is required, but also mechanical parts such as bolts may be loosened.

  Needless to say, the first electrode may be rotated while keeping the first electrode and the second electrode parallel.

(Embodiment 11)
Next, an eleventh embodiment of the present invention will be described with reference to FIG.

FIG. 16 is a sectional view showing a schematic configuration of the plasma processing apparatus used in the eleventh embodiment of the present invention. In FIG. 16, the first electrode 1 and the second electrode 2 are arranged in parallel, and the workpiece 3 is arranged on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 via the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 via the second pipe 9. Is supplied with SF ₆ gas as a reactive gas.

A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2. The helium gas filled in the first gas reservoir 7 is converted into a gas flow path provided in the first electrode 1 and a gas provided in the first dielectric 14 disposed on the workpiece side of the surface of the first electrode. While ejecting to the surface of the object to be processed 3 from the plurality of first gas outlets 12 provided on the second dielectric 16 disposed on the object to be processed side of the surface of the first dielectric through the flow path, The SF ₆ gas filled in the second gas reservoir 10 is provided on the first dielectric 14 disposed on the workpiece side on the surface of the first electrode through the gas flow path provided in the first electrode 1. Ejected to the surface of the object to be treated 3 from the plurality of second gas outlets 13 provided in the second dielectric 16 disposed on the object side of the surface of the first dielectric through the gas flow path formed. When the voltage is applied between the first electrode and the second electrode by operating the high-frequency power source 11, the first electrode 1 and the object to be processed Plasma planar is generated between the 3, it is possible to treat the surface of the object to be treated.

  In this example, by bending the gas flow path in the second dielectric 16, the position of the gas flow path provided in the first dielectric 14 and the gas outlets 12 and 13 provided in the second dielectric are selected. The position is shifted. As a result, a line segment connecting an arbitrary point of the conductor portion having substantially the same potential as that of the first electrode and an arbitrary point of the object to be processed is arranged on the object to be processed side of the surface of the first electrode. The gas flow path provided in the first dielectric and the gas flow path provided in the second dielectric disposed on the workpiece side of the surface of the first dielectric do not pass only inside. With such a configuration, a streamer that triggers arc discharge (spark) is less likely to occur, and a higher voltage can be applied as compared to the fourth embodiment, thereby realizing a high processing speed. be able to.

(Embodiment 12)
Next, Embodiment 12 of the present invention will be described with reference to FIG.

  FIG. 17 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus used in Embodiment 12 of the present invention.

In FIG. 17, the first electrode 1 and the second electrode 2 are disposed in parallel, and the workpiece 3 is disposed on the second electrode 2. A back plate 4 that is a conductor having substantially the same potential as that of the first electrode is provided, and the first electrode 1 is grounded via the back plate 4. Helium gas as an inert gas is supplied from the first gas supply device 5 to the first gas reservoir 7 via the first pipe 6, and the second gas reservoir 10 is supplied from the second gas supply device 8 via the second pipe 9. Is supplied with SF ₆ gas as a reactive gas. A power supply 11 for applying a high frequency voltage to the second electrode 2 is connected to the second electrode 2.

The helium gas filled in the first gas reservoir 7 is converted into a gas flow path provided in the first electrode 1 and a gas provided in the first dielectric 14 disposed on the workpiece side of the surface of the first electrode. While ejecting to the surface of the object to be processed 3 from the plurality of first gas outlets 12 provided on the second dielectric 16 disposed on the object to be processed side of the surface of the first dielectric through the flow path, The SF ₆ gas filled in the second gas reservoir 10 is provided on the first dielectric 14 disposed on the workpiece side on the surface of the first electrode through the gas flow path provided in the first electrode 1. Ejected to the surface of the object to be treated 3 from the plurality of second gas outlets 13 provided in the second dielectric 16 disposed on the object side of the surface of the first dielectric through the gas flow path formed. When the voltage is applied between the first electrode and the second electrode by operating the high-frequency power source 11, the first electrode 1 and the object to be processed Plasma planar is generated between the 3, it is possible to treat the surface of the object to be treated.

  In this example, by bending the gas flow path in the first dielectric 14, the position of the gas flow path provided in the first electrode 1 and the positions of the gas jets 12 and 13 provided in the second dielectric are shown. Is shifted. As a result, a line segment connecting an arbitrary point of the conductor portion having substantially the same potential as that of the first electrode and an arbitrary point of the object to be processed is arranged on the object to be processed side of the surface of the first electrode. The gas flow path provided in the first dielectric and the gas flow path provided in the second dielectric disposed on the workpiece side of the surface of the first dielectric do not pass only inside. With such a configuration, a streamer that triggers arc discharge (spark) is less likely to occur, and a higher voltage can be applied as compared to the fourth embodiment, thereby realizing a high processing speed. be able to.

  In the embodiment of the present invention described above, plasma processing under atmospheric pressure is exemplified, but the operating pressure range is preferably 0.1 atm or more and 100 atm or less. If the pressure is low, a completely sealed container and a vacuum pump are required, which is disadvantageous in terms of cost. Even when the pressure is high, a completely sealed container is required. Operating near atmospheric pressure is most advantageous in terms of cost and total processing time. In addition, high frequency power is supplied in an amount of approximately 0.01 W to 10 W per square centimeter of substrate area. If the power is too small, discharge may not occur. Conversely, if the power is too large, arc discharge is likely to occur.

  Further, although several configuration examples are shown as the plasma source, various configurations can be used.

  Moreover, although the case where plasma was generated using high frequency power of 13.56 MHz was illustrated, it is possible to generate plasma using high frequency power from several hundred kHz to several GHz. Alternatively, direct current power may be used, and pulse power may be supplied. When pulse power is used, by supplying positive and negative pulses alternately, it becomes possible to eliminate the electrification of the dielectric and continuously generate discharge.

  In the embodiment, the input power is indicated by the power value, but the start of discharge is generally determined by the voltage. The input voltage is preferably 100 V or more and 100 kV or less. If the input voltage is 100 V or less, the discharge may not start. When the input voltage is 100 kV or higher, the occurrence of arc discharge (spark) may not be suppressed. More preferably, the voltage is 1 kV or more and 10 kV or less. If the input voltage is 1 kV or less, the discharge may not start. When the input voltage is 10 kV or higher, the occurrence of arc discharge (spark) may not be suppressed.

  In addition, by using a combination of several methods, such as rotating the second electrode while vibrating the first electrode, or pulsating the gas flow while vibrating or rotating the electrode or the object to be processed, uniformity is achieved. Can be increased more effectively.

  Moreover, although the case where helium is used as a gas mainly composed of an inert gas is exemplified, a rare gas such as helium or argon, or a gas obtained by adding a slight amount of ketones to the gas can be used.

Also, a case has been exemplified using a SF ₆ reactive gas as the gas mainly, it is possible to select the appropriate gas depending on the desired reaction. For example, air or oxygen may be used for oxidation, and a mixed gas such as a halogen-containing gas and oxygen may be used for etching. Alternatively, a silicon oxide film can be formed using TEOS gas and oxygen. For the purpose of simple wettability improvement, a nitrogen-based gas may be used. When a gas mainly composed of air or nitrogen is used, there is an advantage that the running cost is extremely reduced because an expensive noble gas is not used.

  Alternatively, an inert gas such as helium may be mixed with a gas mainly composed of a reactive gas. In this case, the inert gas can have a higher flow rate than the reactive gas.

  Further, the case where the flow rate of the gas mainly composed of inert gas is 15 SLM and the flow rate of the gas mainly composed of reactive gas is 3 LSM, but the flow rate of gas mainly composed of inert gas: The main gas flow rate is preferably about 1: 5 to 10: 1. When the flow rate ratio of the reactive gas is larger than 1: 5, it becomes difficult to generate plasma. When the flow rate ratio of the inert gas is larger than 10: 1, a sufficient processing speed may not be obtained.

  The porous dielectric is appropriately selected from porous materials (porous dielectric materials) made of dielectric materials such as porous glass, porous ceramics, glass fiber aggregates used for filters, and polymer fiber aggregates. Can be used.

  Moreover, although the case where the voltage was applied to the 2nd electrode was illustrated, you may apply a voltage to the 1st electrode.

  Moreover, it is preferable that the pitch between a 1st gas jet port and a 2nd gas jet port is 1-50 mm in general. When the pitch is narrower than 1 mm, the manufacturing cost of the component on the first electrode side increases. When the pitch is wider than 50 mm, the processing unevenness increases and the processing uniformity is impaired.

  According to the plasma generation process and apparatus of the present invention, a high-speed process can be realized under a relatively high pressure of 0.1 to 100 atmospheres. Therefore, it can be widely applied as a structure for generating plasma to perform surface modification, thin film deposition, etching, and the like, displays such as semiconductors, liquid crystals, FEDs, PDPs, electronic parts, printed boards. It can be used for manufacturing.

Schematic configuration diagram of a plasma processing apparatus used in Embodiment 1 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 2 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 3 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 4 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 5 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 6 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 7 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 8 of the present invention The top view which shows the structure of the back plate used in Embodiment 8 of this invention. The top view which shows the structure of the 1st electrode used in Embodiment 8 of this invention. The top view which shows the structure of the 1st dielectric material used in Embodiment 8 of this invention. The top view which shows the structure of the 2nd dielectric material used in Embodiment 8 of this invention The top view which shows the structure of the 2nd dielectric material used in Embodiment 8 of this invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 9 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 10 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 11 of the present invention Schematic configuration diagram of a plasma processing apparatus used in Embodiment 12 of the present invention. Schematic configuration diagram of a plasma processing apparatus used in a conventional example Schematic configuration diagram of a plasma processing apparatus used in a conventional example

Explanation of symbols

1 1st electrode 2 2nd electrode
3 Workpiece
4 Back plate of the first electrode
5 First gas supply device
6 1st piping 7 1st gas reservoir 8 2nd gas supply device 9 2nd piping 10 2nd gas reservoir 11 High frequency power supply

Claims (22)

A plasma processing method for generating a planar plasma by applying a voltage between a first electrode and a second electrode on which an object to be processed is placed, and processing the surface of the object to be processed,
A gas mainly composed of an inert gas is supplied to the surface of the object to be processed from a plurality of first gas outlets provided in the first electrode or a dielectric disposed on the object to be processed side of the surface of the first electrode. The surface of the object to be processed is included in the surface of the object to be processed from a plurality of second gas outlets provided on the first electrode or a dielectric disposed on the object to be processed side of the surface of the first electrode. A plasma processing method characterized by ejecting a gas. A plasma processing method for generating a planar plasma by applying a voltage between a first electrode and a second electrode on which an object to be processed is placed, and processing the surface of the object to be processed, wherein the first electrode A gas mainly composed of an inert gas is ejected from the plurality of first gas ejection ports provided in a porous conductor disposed on the surface of the object to be processed to the surface of the object to be processed. A gas containing a reactive gas is ejected to the surface of the object to be processed from a plurality of second gas outlets provided on the electrode or the dielectric disposed on the object to be processed side of the surface of the first electrode. A plasma processing method. 2. The plasma processing method according to claim 1, wherein the dielectric disposed on the object side of the surface of the first electrode is a porous dielectric. 3. The plasma processing method according to claim 2, wherein the dielectric disposed on the object side of the surface of the first electrode is a porous dielectric. A first gas reservoir filled with a gas ejected from the first gas ejection port is provided in the first electrode, and a second gas reservoir filled with a gas ejected from the second gas ejection port in the first electrode. The plasma processing method according to claim 1, wherein the plasma processing method is provided. The plasma processing method according to claim 5, wherein the first gas reservoir and the second gas reservoir are surrounded by a conductor having substantially the same potential as that of the first electrode. 3. The plasma processing method according to claim 1, wherein the flow of the gas ejected from the first gas ejection port is substantially perpendicular to the surface of the object to be processed in the vicinity of the first gas ejection port. The plasma processing method according to claim 1, wherein the first gas outlet and the second gas outlet are arranged in a staggered manner or alternately with respect to the surface of the object to be processed. 3. The plasma processing method according to claim 1, wherein the first electrode or the second electrode is vibrated while the first electrode and the second electrode are kept in parallel. 3. The plasma processing method according to claim 1, wherein the first electrode or the second electrode is rotated while keeping the first electrode and the second electrode parallel to each other. A plasma processing method for generating a planar plasma by applying a voltage between a first electrode and a second electrode on which an object to be processed is placed, and processing the surface of the object to be processed, wherein the first electrode And a line segment connecting an arbitrary point of the conductor portion having substantially the same potential and an arbitrary point of the object to be processed is formed on the first dielectric disposed on the object side of the surface of the first electrode. It is configured so that it does not pass through both the gas flow path provided and the gas flow path provided in the second dielectric disposed on the workpiece side of the surface of the first dielectric. A plasma processing method characterized by the above. Between the first electrode, the second electrode for placing the workpiece, a power source for applying a voltage to the first electrode or the second electrode, and the surface of the first electrode or the first electrode A plurality of first gas outlets provided in the dielectric disposed on the object to be processed, and a dielectric disposed on the object to be processed on the surface of the first electrode or the first electrode. A plasma processing apparatus comprising a plurality of second gas ejection ports. Between the first electrode and the second electrode for placing the workpiece, a power source for applying a voltage to the first electrode or the second electrode, and the workpiece side of the surface of the first electrode A plurality of first gas outlets provided in the porous conductor disposed in the first electrode, and a plurality of first gas nozzles disposed in the dielectric disposed on the workpiece side of the surface of the first electrode or the first electrode. A plasma processing apparatus comprising a two-gas ejection port. The plasma processing apparatus according to claim 12, wherein the dielectric disposed on the object to be processed side of the surface of the first electrode is a porous dielectric. The plasma processing apparatus according to claim 13, wherein the dielectric disposed on the processing object side of the surface of the first electrode is a porous dielectric. A first gas reservoir filled with a gas ejected from the first gas ejection port is provided in the first electrode, and a second gas reservoir filled with a gas ejected from the second gas ejection port in the first electrode. The plasma processing apparatus according to claim 12, wherein the plasma processing apparatus is provided. The plasma processing apparatus according to claim 16, wherein the first gas reservoir and the second gas reservoir are surrounded by a conductor having substantially the same potential as that of the first electrode. The flow of the gas ejected from the first gas ejection port is configured to be substantially perpendicular to the surface of the workpiece in the vicinity of the first gas ejection port. The plasma processing apparatus as described. The plasma processing apparatus according to claim 12 or 13, wherein the first gas outlet and the second gas outlet are arranged in a zigzag manner or alternately with respect to the surface of the object to be processed. 14. The plasma processing apparatus according to claim 12, further comprising a mechanism that vibrates the first electrode or the second electrode while keeping the first electrode and the second electrode parallel to each other. 14. The plasma processing apparatus according to claim 12, further comprising a mechanism for rotating the first electrode or the second electrode while keeping the first electrode and the second electrode parallel to each other. Between the first electrode and the second electrode for placing the workpiece, a power source for applying a voltage to the first electrode or the second electrode, and the workpiece side of the surface of the first electrode A plasma processing apparatus comprising: a first dielectric disposed on a surface of the first dielectric; and a second dielectric disposed on a workpiece side of the surface of the first dielectric,
A line segment connecting an arbitrary point of the conductor portion having substantially the same potential as the first electrode and an arbitrary point of the second electrode is a gas flow path provided in the first dielectric, and the second A plasma processing apparatus, wherein the plasma processing apparatus is configured not to pass only inside both gas flow paths provided in a dielectric.

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