JP2006245609A - Ceramic bonded body, wafer holder and semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic joined body capable of suppressing damage to a joined part due to a thermal shock and improving reliability for joining a ceramic joined body such as a wafer holder used in a semiconductor manufacturing apparatus or the like.
A ceramic joined body obtained by butt-joining a cylindrical or rod-like joint component 10 having different thermal conductivity to a ceramic member 1 whose temperature is raised to 100 ° C. or more, and a part of a side surface of the joint component 10 In addition, the inclined surface 10a satisfying the angle θ made with respect to the butting surface of the ceramic member 1 satisfies 0 ° <θ <90 ° and / or the curved surface satisfying R ≧ 5 mm. An intermediate bonded part may be interposed between the ceramic member 1 and the bonded part 10 or a protrusion may be provided on the back surface of the ceramic member 1, and the inclined surface or curved surface may be provided on the side surface of the intermediate bonded part or the protruding part. it can.
[Selection] Figure 2

Description

  The present invention relates to a bonded body of ceramics having different thermal conductivities, a wafer processing holder made of the ceramic bonded body, for example, a wafer holder for a semiconductor manufacturing apparatus, and a semiconductor manufacturing apparatus including the wafer holder.

  Conventionally, in a manufacturing process of a semiconductor device, a liquid crystal display device, etc., when performing a film forming process for forming a predetermined film on the surface of a substrate such as a semiconductor substrate or a glass substrate to be processed, an etching process, etc. A processing apparatus (so-called single-wafer processing apparatus) that processes each sheet is used.

  For example, a plurality of such leaf-type processing apparatuses are installed, and a substrate, which is a processing target, is transported and supplied to these processing apparatuses by a moving device such as a loader. Each processing apparatus is provided with a wafer holder for holding a substrate supplied by a loader. In a state where the substrate is mounted on the wafer holder, a film forming process or an etching process is performed on the substrate.

  The above-described wafer holder, particularly the substrate mounting surface and the vicinity thereof, are exposed to a reactive gas used in the film forming process and etching process on the substrate, such as a highly corrosive halogen gas. Therefore, the constituent material of the wafer holder is required to have sufficient corrosion resistance against these reaction gases. Thus, from the viewpoints of corrosion resistance, heat resistance, and durability, ceramics may be used as the material for the wafer holder instead of metal or resin.

  Also, the wafer holder has a resistance heating element to heat the wafer and is self-heated or indirectly heated by a lamp or the like. For this reason, the electrode that supplies power to the resistance heating element, the cylindrical body that houses and protects the temperature measuring part for measuring the temperature of the wafer holder, the part that supports the wafer holder, etc. are held on the wafer. May be used by joining to the body.

  In recent years, when the above-described treatment is performed on a substrate, the uniformity of the temperature distribution on the substrate, that is, the thermal uniformity is required. For this reason, considering soaking properties, it is indispensable to use a material having a low thermal conductivity for the cylindrical body and the like joined to the ceramic wafer holder. This is because when a material with high thermal conductivity is joined, the heat escape from that part becomes large, the temperature in the vicinity of the joined part relatively decreases, and the thermal uniformity of the substrate mounting surface is impaired. It is.

  Therefore, a joining part such as a cylindrical body made of a material having a low thermal conductivity is joined to the ceramic wafer holder, but the joining area is increased in order to increase joining reliability, and In order to minimize the escape of heat, the cross-sectional area of the joined parts has been reduced.

  For example, as shown in FIG. 1A, in a conventional wafer holder, when a cylindrical joining component 3 is butt-joined to a ceramic member 1 in which a resistance heating element 2 is embedded, the joining end with the ceramic member 1 is used. The thickness of the joining component 3 is made thin, leaving the part. Further, as shown in FIG. 1B, the same applies to the case where a rod-like (columnar) joining component 4 is joined to the ceramic member 1.

  In a manufacturing process of a semiconductor or the like, a substrate temperature held on a wafer holder may be heated to a high temperature of 100 ° C. or higher in a substrate film forming process or an etching process. At this time, if a bonded part with a low thermal conductivity and a reduced thickness and reduced cross-sectional area is bonded, a heat cycle that repeatedly raises and lowers the temperature of the substrate and a thermal shock due to a sudden increase and decrease in temperature are applied. In addition, there is a defect that the joining component is damaged near the joining portion or near the step portion where the cross-sectional area is changed, or a crack is generated.

  In view of such circumstances, the present invention suppresses the occurrence of damage such as breakage of joint parts and cracks due to thermal shock, and the reliability of bonding for ceramic bonded bodies such as wafer holders used in semiconductor manufacturing apparatuses and the like. An object is to provide an improved ceramic joined body. Another object of the present invention is to provide a wafer holder using this ceramic joined body and a semiconductor manufacturing apparatus.

  In order to achieve the above object, a ceramic joined body provided by the present invention is a joined body in which a joined part having different thermal conductivity is butt-joined to a ceramic member whose temperature is raised to 100 ° C. or more, and the joined part And a curved surface satisfying R ≧ 5 mm in curvature R and / or an inclined surface satisfying an angle θ of 0 ° <θ <90 ° with respect to the butting surface of the ceramic member. And

  Another ceramic joined body provided by the present invention is a joined body in which a ceramic member heated to 100 ° C. or higher and a joined part having different thermal conductivities are joined by inserting an intermediate joined part between them. The intermediate joint component is characterized by being butt-joined to the ceramic member and the joint component, respectively. In the ceramic joined body according to the present invention, an angle θ formed with respect to a butting surface of the ceramic member and the intermediate joint component at a part of a side surface of the joint component and / or the intermediate joint component is 0 ° <θ <90. It is possible to have an inclined surface satisfying ° and / or a curved surface whose curvature R satisfies R ≧ 5 mm.

  Further, another ceramic joined body provided by the present invention is a joined body in which a joined part having different thermal conductivity is joined to a ceramic member whose temperature is raised to 100 ° C. or more, and a projection is formed on the surface of the ceramic member. A part is formed, and a joining part is butt-joined to the protruding surface. In the ceramic joined body of the present invention, an angle θ formed with respect to the projecting portion of the ceramic member and / or a part of the side surface of the joining component with respect to the butting surface of the projecting portion and the joining component is 0 ° <θ <90. It is possible to have an inclined surface satisfying ° and / or a curved surface whose curvature R satisfies R ≧ 5 mm.

  In the above-described ceramic joined body of the present invention, it is preferable that the thermal conductivity of the joined part is lower than the thermal conductivities of the ceramic member and the intermediate joined part. Specifically, the thermal conductivity of the ceramic member is preferably 80 W / mK or more, and the thermal conductivity of the bonded component is preferably 20 W / mK or less. Further, it is more preferable that the ceramic member has a thermal conductivity of 100 W / mK or more, and a bonded component has a thermal conductivity of 5 W / mK or less.

  The present invention also comprises a wafer for a semiconductor manufacturing apparatus, comprising any one of the ceramic joined bodies described above, wherein the ceramic member has a heating resistor, and the joined parts and the intermediate joined parts are cylindrical bodies. Provide a holding body.

  In the wafer holder of the present invention, it is preferable that the ceramic member and the intermediate joining component are made of at least one ceramic selected from aluminum nitride, silicon carbide, alumina, and silicon nitride. Moreover, it is preferable that the said joining component is comprised with at least 1 sort (s) of ceramics chosen from the alumina, the silicon nitride, the mullite, and the mullite-alumina composite_body | complex.

  Furthermore, the present invention provides a semiconductor manufacturing apparatus comprising any one of the above-described ceramic joined bodies or any one of wafer holders.

  ADVANTAGE OF THE INVENTION According to this invention, generation | occurrence | production of damage, such as a plate barrel of a joining component by a thermal shock, a crack, can be suppressed, and the ceramic joined body with high reliability with respect to joining can be provided. By using this ceramic bonded body of the present invention, a wafer holding body in which a cylindrical body in which a lead for feeding and a temperature measuring element are housed is reliably bonded without disturbing the thermal uniformity, and the wafer holding A semiconductor manufacturing apparatus including a body can be provided.

  As a result of intensive studies on the phenomenon in which bonded parts having different thermal conductivities butt-bonded to a ceramic member are damaged in the vicinity of the bonded portion or in the vicinity of the stepped portion where the cross-sectional area is changing, As in the conventional joining structure shown in 1 (a) and 1 (b), if there is a step portion of 90 ° in the tubular or rod-like joining parts 3 and 4 joined to the ceramic member 1, stress is applied to the part. Concentrated and found to be prone to brittle fracture during use.

  Furthermore, since the joining parts 3 and 4 have a lower thermal conductivity than the ceramic member 1, the flow of heat to the joining parts 3 and 4 is restricted at the joint between the joining parts 3 and 4 and the ceramic member 1, and the temperature Difference occurs and stress is generated. In addition, a stress is generated due to a change in shape at the joint between the ceramic member 1 and the joining components 3 and 4. For this reason, it has been found that the stress due to the temperature difference and the stress due to the shape effect are concentrated at one place of the joints 3 and 4 and damage to the joined parts is caused.

  Based on these findings, in the present invention, when joining parts having different thermal conductivities are butt-joined to the ceramic member, a step portion where stress is concentrated from the joining parts is eliminated, and stress due to temperature difference or shape effect is eliminated. A structure in which concentration is dispersed is adopted. That is, an inclined surface satisfying an angle θ of 0 ° <θ <90 ° with respect to the butt surface of the ceramic member is provided on a part of the side surface of the joining component, and / or a curved surface having a curvature R satisfying R ≧ 5 mm is provided. Is.

  By providing the inclined surface or curved surface as described above, in a ceramic joined body in which a joined part having different thermal conductivity is butt-joined to a ceramic member whose temperature is raised to 100 ° C. or higher, the joined part is damaged or cracked. The occurrence of damage could be suppressed, and the reliability of the ceramic joined body could be improved.

  Next, the joint structure of the ceramic joined body of the present invention will be specifically described. First, FIG. 1A shows a conventional joining structure when the joining part is a cylindrical body, and FIG. 1B shows a case where the joining part is a rod-like body. The ceramic member 1 includes a resistance heating element 2, and a cylindrical joining component 3 or a rod-like joining component 4 is joined to a surface opposite to a mounting surface on which a wafer such as a semiconductor wafer or a liquid crystal substrate is mounted. Has been.

  In these conventional ceramic joined bodies, in order to suppress the diffusion of heat from the ceramic member 1 to the joined parts 3 and 4 and to improve the thermal uniformity of the mounting surface, the thickness of the joined parts 3 and 4 is reduced as shown in the figure. Heat escape is minimized by reducing the cross-sectional area by reducing the thickness of the area other than the vicinity. However, in this conventional joint structure, when the ceramic member 1 is heated to a high temperature due to a sudden change in shape at the stepped portions of the joint components 3 and 4 and the flow of heat at the stepped portions. Stress concentrated on the stepped portions of the joined parts 3 and 4, and breakage or cracks frequently occurred in these portions.

  On the other hand, in the present invention, for example, as shown in FIG. 2, the inclined surface 10 a is formed in the step portion formed on the side surface by reducing the cross-sectional area of the joining component 10. At this time, the angle θ formed by the inclined surface 10a of the joining component 10 with respect to the butting surface of the ceramic member 1 is larger than 0 ° and smaller than 90 °, preferably 10 ° or more and 80 ° or less, and more preferably. Is from 20 ° to 70 °.

  For example, as shown in FIG. 3, it is also possible to form a curved surface 11a on the side surface of the joining component 11 to disperse the stress. As the shape of the curved surface 11a at this time, the curvature R of the curved surface 11a is required to be 5.0 mm or more. Even if the curvature R is less than 5.0 mm, there is a certain effect, but stress concentration remains on the curved portion. For this reason, it is desirable that R ≧ 5.0 mm, in which a particularly remarkable effect is obtained.

  In the basic joint structure of the present invention described above, by providing the inclined surface 10a of the predetermined angle θ or the curved surface 11a of the predetermined curvature R on a part of the side surfaces of the joint components 10, 11, the corner of the stepped portion is provided. It is possible to prevent the stress from concentrating on the surface, to prevent the joining parts 10 and 11 from being damaged and to improve the reliability. 2 and 3, the cylindrical joining part corresponding to FIG. 1 (a) is illustrated, but the joining structure of the present invention is basically completely different even in the rod-like joining part corresponding to FIG. 1 (b). Are the same. Therefore, the drawings of the rod-like joining parts are also omitted in the following description of each joining structure.

  As another basic joining structure, as shown in FIG. 4, an intermediate joining component 20 can be inserted between the ceramic member 1 and the joining component 12. At this time, if the shape of the joint portion between the intermediate joint component 20 and the joint component 12 is made substantially the same, no stress is generated due to the shape change in this portion. For this reason, by inserting the intermediate joint component 20, the stress applied to the joint component 12 can be limited to only those related to heat transfer, so stress due to shape change and stress due to heat flow are concentrated in one place. However, the reliability of the joint can be improved by dispersing.

  In the joining structure of FIG. 4, the material of the intermediate joining component 20 is preferably the same as that of the ceramic member 1. As a result, in the joint portion between the ceramic member 1 and the intermediate joint component 20, a stress due to the shape change is generated, but no stress is generated due to the narrowing of the heat flow due to the low thermal conductivity. Therefore, the reliability of the joint is also improved by the dispersion of stress.

  In addition to the joining structure of FIG. 4 described above, it is preferable to form an inclined surface or a curved surface on the side surface of the joining component and / or the intermediate joining component as in FIGS. For example, as shown in FIG. 5, a curved surface 13 a satisfying a curvature R of R ≧ 5 mm is formed on a part of the side surface of the bonded component 13 bonded to the ceramic member 1 with the intermediate bonded component 21 interposed therebetween. Further, in the structure of FIG. 6, an inclined surface 14 a satisfying an angle θ of 0 ° <θ <90 ° with respect to the abutting surface of the ceramic member 1 and the intermediate bonded component 22 is formed on a part of the side surface of the bonded component 14. is there. Further, as shown in FIG. 7 and FIG. 8, inclined surfaces 23 a or curved surfaces 24 a similar to the above can be provided on the side surfaces of the intermediate joint components 23 and 24 between the ceramic member 1 and the connection component 15, respectively.

  As another basic joining structure, the intermediate joining component can be integrated with a ceramic member. For example, as shown in FIG. 9, a protrusion 25 is provided on the ceramic member 1, and the joining component 16 is butt-joined to the protrusion 25. This joining structure is preferable because stress generated during joining between the ceramic member and the joining component or the intermediate joining component is eliminated.

  In the joining structure of FIG. 9 as well, it is preferable to form an inclined surface and a curved surface on the side surfaces of the joining component and / or the intermediate joining component as in FIGS. For example, as shown in FIG. 10, a curved surface 16 a satisfying a curvature R of R ≧ 5 mm is formed on the side surface of the joining component 16 joined to the protrusion 26 of the ceramic member 1, or as shown in FIG. An inclined surface 17a that satisfies an angle θ of 0 ° <θ <90 ° with respect to the butt surface with the protrusion 27 can be formed on the side surface. Further, as shown in FIGS. 12 and 13, inclined surfaces 28 a or curved surfaces 29 a similar to the above can be provided on the side surfaces of the protrusions 28 and 29 of the ceramic member 1.

  In the present invention, the thermal conductivity of the joined component needs to be lower than that of the ceramic member in order to ensure the thermal uniformity of the ceramic member. In addition, the intermediate joint component preferably has a higher thermal conductivity than at least the joint component in order to keep only the stress due to the shape effect and minimize the stress due to heat transfer.

  Therefore, in order to ensure the thermal uniformity on the mounting surface of the ceramic member, it is preferable that the thermal conductivity of the ceramic member is 80 W / mK or more and the thermal conductivity of the bonded component is 20 W / mK or less. More preferably, by setting the thermal conductivity of the ceramic member to 100 W / mK or more and the thermal conductivity of the joined component to 5 W / mK or less, it is possible to obtain a ceramic joined body having more excellent thermal uniformity.

  When the thermal conductivity is set to such a level, generally, the heat flow between the ceramic member and the joining component is largely blocked, and a large temperature difference is generated, resulting in a large stress in the vicinity of the joint. become. However, by adopting the above-described bonding structure of the present invention, it is possible to disperse stress relating to heat transfer and to obtain a highly reliable ceramic bonded body.

  When the ceramic member is used as a wafer holder, a resistance heating element can be provided. Having a heating resistor is preferable because the processing substrate can be efficiently heated as compared with the case where the ceramic member is indirectly heated with an infrared lamp or the like. At this time, in order to protect the lead for supplying power to the resistance heating element and the temperature measuring element for measuring temperature from corrosive gas, etc., the joining parts and intermediate joining parts to be joined to the ceramic member are formed as a cylindrical body. It is preferable that a lead and a temperature measuring element are accommodated therein.

  The material of the ceramic member is preferably aluminum nitride, silicon carbide, alumina, or silicon nitride. Of these, aluminum nitride and silicon carbide are ceramics having a relatively high thermal conductivity, and are therefore suitable for uniforming the temperature distribution on the mounting surface. In addition, since silicon nitride has a high material strength, it is highly resistant to thermal shock, and there is a merit that the ceramic member is less likely to be damaged by a sudden increase or decrease in temperature, and the processing time can be shortened. Alumina can be produced at a lower cost than other ceramics. Needless to say, these materials should be selected according to the application.

  As a material of the joining component, it is necessary not to transmit the heat of the ceramic member. Therefore, it is preferable to use a material having a relatively low thermal conductivity. Specifically, alumina, silicon nitride, mullite, and mullite-alumina composite are preferable. In addition, as the metal material, stainless steel or Kovar having a relatively low thermal conductivity can be used as the joining component. When these metal materials are used as joined parts, tungsten or molybdenum can be inserted between the ceramic members in order to reduce the difference in thermal expansion coefficient from the ceramics.

  In addition, it is most preferable to use the same material as the ceramic member to be used for the intermediate joining component. However, for example, when the strength of the joining component is relatively weak, the thermal conductivity of the intermediate joining component can be set to an intermediate thermal conductivity between the joining component and the ceramic member. In this case, a stress corresponding to a shape effect and a stress corresponding to a difference in thermal conductivity with the ceramic member act on the intermediate joint component. For this reason, the stress applied to the joined body is only applied due to the difference in thermal conductivity with the intermediate joined part, and the stress applied to the joined part can be reduced.

  Thus, it is preferable that the thermal conductivity among the ceramic member, the intermediate joint component, and the joint component is ceramic member ≧ intermediate joint component ≧ joint component. The material used for the intermediate joining component at this time can be freely selected depending on the application and characteristics such as the strength of the joining component. However, since the intermediate joining part plays a role of dispersing stress, it is preferable to select a material having relatively high thermal conductivity, such as silicon carbide, silicon nitride, aluminum nitride, and alumina.

  Various combinations of materials for the ceramic member, the intermediate joint component, and the joint component are conceivable, but it is necessary to consider the thermal expansion coefficient of each component or member. That is, when the thermal expansion coefficients of the respective materials are greatly different from each other, stress at the time of joining remains in addition to the generation of stress due to the temperature rise of the ceramic member as described above, and this must be taken into consideration. .

  In the present invention, for example, active metal brazing or glass can be used as a method for joining the ceramic member and the joining component, the ceramic member and the intermediate joining component, or the intermediate joining component and the joining component. It goes without saying that other known methods can be used.

  The most preferable form of the joining structure in the present invention is the case where the ceramic member and the intermediate joining part are aluminum nitride, and the joining part is mullite or mullite-alumina composite. Moreover, it is preferable to use glass for the joining method. These materials have almost no difference in thermal expansion coefficient, and furthermore, the thermal conductivity of the joined parts is very low, and the thermal conductivity of the ceramic members is high, so this combination makes it possible to hold a highly reliable wafer with excellent thermal uniformity. The body can be made. Moreover, the semiconductor manufacturing apparatus using the wafer holder in the present invention has excellent heat uniformity and high bonding reliability of the bonded components.

[Example 1]
The aluminum nitride powder was dispersed and mixed with 0.5% by mass of yttria (Y ₂ O ₃ ) as a sintering aid and a binder, and then granulated by spray drying. Two pieces of this granulated powder were formed by uniaxial pressing into a disk shape having a diameter of 350 mm × thickness of 5 mm after sintering. The compact was degreased in a nitrogen stream at a temperature of 900 ° C., and further sintered in a nitrogen stream at a temperature of 1900 ° C. for 5 hours. The obtained AlN sintered body had a thermal conductivity of 180 W / mK. The entire surface of this AlN sintered body was polished with diamond abrasive grains.

Next, a sintering aid and an ethyl cellulose binder were added to the W powder and kneaded, and a resistance heating element circuit was printed on one AlN sintered body having a diameter of 350 mm and a thickness of 5 mm. The heater zone is a circuit for controlling one zone. This was degreased in a nitrogen stream at 900 ° C. and baked by heating at 1800 ° C. for 1 hour. On the remaining one AlN sintered body, a glass for bonding to which an ethylcellulose binder was added and kneaded was applied and degreased in a nitrogen stream at 900 ° C. The resistance heating element surface of these AlN sintered bodies and the glass surface for bonding are overlapped, a load of 5 kg / cm ² is applied to prevent deviation, and heating is performed at 1800 ° C. for 2 hours to bond the resistance heating element inside. A ceramic member made of AlN was prepared.

  On the other hand, the joined part was produced as follows. First, an extrusion molding binder was added to the mullite powder, dispersed and mixed, and extrusion molding was performed. The shape of the molded body was two types: a rod-shaped body having a diameter of 20 mm at the joint with the ceramic member and a diameter of 12 mm at the body, and a cylindrical body having an inside diameter of 8 mm. Moreover, the inclined surface or the curved surface was formed in the side surface as needed. These compacts were degreased in the air at 800 ° C. and sintered in a nitrogen atmosphere at 1800 ° C. for 5 hours. The thermal conductivity of the obtained joining part made from mullite was 1 W / mK.

Furthermore, as an intermediate joint part, a cylindrical body and a bar-shaped intermediate joint part made of ceramics such as AlN and Si ₃ N ₄ were respectively produced by the same method as the production of the sintered body in the above ceramic member production. In addition, about the cylindrical intermediate | middle joining components, all thickness was 5 mm. Moreover, the inclined surface or the curved surface was formed in the side surface as needed. Moreover, in order to replace with an intermediate joining part, what prepared the protrusion part in the back surface of the said ceramic member made from AlN was also prepared.

Next, a ceramic member made of AlN (thermal conductivity 180 W / mK), a joining part made of a mullite tubular body (thermal conductivity 1 W / mK), and an intermediate joining part made of a tubular body if necessary (Including the protrusion provided on the back surface of the ceramic member) was butt-joined in a nitrogen atmosphere at 800 ° C. using SiO ₂ —ZnO—B ₂ O ₃ -based glass. The bonded structure of each ceramic bonded body was any one of FIGS. 1, 2, 4, 6, 7, 9, 11, and 12, and is shown in Table 1 below for each sample.

  About each obtained ceramic joined body, electric power was supplied to the resistance heating element of the ceramic member at a voltage of 200 V, the temperature was raised to 500 ° C., and then the power supply was turned off to check the damaged state of the joined parts of the joined parts. . Further, a heat cycle test at room temperature to 500 ° C. was performed 500 times, and the subsequent damage state of the joined parts was confirmed. Table 1 below shows the damage occurrence rate of the joined part made of the cylindrical body obtained when heated at 500 ° C. and after the heat cycle (HC). Note that the thermal uniformity of the ceramic member at 500 ° C. was ± 0.3% in all samples.

  As can be seen from the above results, as compared with Sample 1 and Sample 11 of the conventional bonding structure, the bonding has an inclined surface with an angle θ of 0 ° <θ <90 ° with respect to the butt surface with the ceramic member. In each sample of the joining structure of the present invention using a ceramic member provided with a part, an intermediate joining part, or a protrusion, the damage occurrence rate of the joining part is clearly reduced, and particularly, the angle θ of the inclined surface is 20 ° <θ. <70 ° sample showed very little damage after HC.

[Example 2]
A ceramic joined body was produced in the same manner as in Example 1 except that the ceramic member was made of AlN and had a thermal conductivity of 100 W / mK or 80 W / mK. Incidentally, AlN having a thermal conductivity of 100 W / mK was realized by setting the degreasing condition to 500 ° C. in the atmosphere, and AlN having 80 W / mK was set to 600 ° C. in the atmosphere.

  For each ceramic joined body having a joint structure similar to that of Example 1 obtained, the damage occurrence rate of the cylindrical joint part was determined in the same manner as in Example 1. When heated at 500 ° C. and after HC, There was a tendency for the incidence of damage to be lower than in each sample of Example 1. For example, in the joint structure of FIG. 2 which is the same as the sample 2 in Table 1 above, the damage occurrence rate when heated at 500 ° C. and after HC is 100 W / mK, 2/10, 5/10, and 80 W / mK. It was 2/10 and 4/10. The soaking property at 500 ° C. was ± 0.4% in all samples.

[Example 3]
A ceramic joined body was produced in the same manner as in Example 1 except that a joined part (thermal conductivity 1 W / mK) made of a mullite rod-shaped body was used as the joined part. That is, the ceramic member is a ceramic member made of AlN (thermal conductivity 180 W / mK), and if necessary, an intermediate joining part made of a rod-like body (including a protrusion provided on the back surface of the ceramic member) is used. Any one of 1, 2, 4, 6, 7, 9, 11 and 12 was adopted.

  About each obtained ceramic joined body, similarly to the said Example 1, the damage state of a joining component was confirmed after the 500 degreeC heat cycle (500 degree C) heat cycle (HC) test of 500 degreeC, and the obtained result was shown. The results are shown in Table 2 below. Note that the thermal uniformity of the ceramic member at 500 ° C. was ± 0.3% in all samples.

  As can be seen from the above results, in each sample having the joining structure of the present invention using the joined part provided with the inclined surface of the predetermined angle θ, the intermediate joined part, or the ceramic member provided with the protrusion, Even in the joined parts made of the above, the damage occurrence rate was clearly reduced, and in particular, the occurrence of damage was further reduced even after the HC in the sample in which the angle θ of the inclined surface was 20 ° <θ <70 °.

[Example 4]
A ceramic joined body was produced in the same manner as in Example 3 except that the ceramic member was made of AlN and had a thermal conductivity of 100 W / mK or 80 W / mK.

  For each ceramic joined body having the same joining structure as in Example 3, the damage occurrence rate of the joined parts was determined in the same manner as in Example 3. As a result, Example 3 was observed both when heated at 500 ° C. and after HC. There was a tendency for the incidence of damage to decrease compared to each sample. Incidentally, the thermal uniformity of the ceramic member at 500 ° C. was ± 0.4% in all samples.

[Example 5]
A ceramic member made of AlN (thermal conductivity 180 W / mK), a joining part made of a mullite tubular body (thermal conductivity 1 W / mK), and an intermediate joining part made of a tubular body if necessary (ceramic member) (Including protrusions provided on the back surface) and butt-joining in the same manner as in Example 1. The bonded structure of each ceramic bonded body was any one of FIGS. 3, 5, 8, 10 and 13, and each sample was shown in Table 3 below.

  About each obtained ceramic joined body, the damage incidence rate of joining components was calculated | required at the time of 500 degreeC heating and after a heat cycle (HC) similarly to Example 1, and the result was shown in following Table 3. FIG. Note that the thermal uniformity of the ceramic member at 500 ° C. was ± 0.3% in all samples.

  As can be seen from the above results, each sample of the joining structure of the present invention in which the curved surface having the curvature R of 5 mm or more is provided on the joining component, the intermediate joining component, or the protrusion, is used as a comparative sample having a curvature R of 4 mm. In comparison, the rate of damage was clearly reduced.

[Example 6]
As a joining part, a joining part comprising a cylindrical body or a rod-like body made of mullite-alumina (thermal conductivity 4 W / mK), alumina (thermal conductivity 20 W / mK), or silicon nitride (thermal conductivity 20 W / mK). Otherwise, a ceramic joined body was produced in the same manner as in Example 1 described above. That is, as the ceramic member, an AlN ceramic member (thermal conductivity 180 W / mK) is used, and if necessary, an intermediate joining component (including a protrusion provided on the back surface of the ceramic member) is used. Any one of the joining structures was adopted.

  About each obtained ceramic joined body, when the 500 degreeC heating and the heat cycle (HC) test of room temperature-500 degreeC 500 times were confirmed like the said Example 1, when the damage state of joining components was confirmed, Tables 1-3 It was almost the same tendency. The thermal uniformity of the ceramic member at 500 ° C. was ± 0.3% when the joined part was a mullite-alumina sample, and ± 0.4% when the alumina and silicon nitride samples were used.

[Example 7]
As a joining part, a joining part made of a cylindrical body made of stainless steel (thermal conductivity 10 W / mK) or Kovar (thermal conductivity 7 W / mK) is used. The body was made. That is, as the ceramic member, an AlN ceramic member (thermal conductivity 180 W / mK) is used, and if necessary, an intermediate joining component (including a protrusion provided on the back surface of the ceramic member) is used. The joining structure of any of 4, 6 and 11 was adopted.

  About each obtained ceramic joined body, the damage state of the joining components at the time of 500 degreeC heating and after 500 times of a heat cycle (HC) test of room temperature-500 degreeC similarly to the said Example 1 was confirmed, and the obtained result was shown. The results are shown in Table 5 below. Note that the thermal uniformity of the ceramic member at 500 ° C. was ± 0.3% in all samples.

[Example 8]
Ceramic members made of silicon carbide (thermal conductivity 1 W / mK), silicon nitride (thermal conductivity 1 W / mK), or alumina (thermal conductivity 1 W / mK) are used, and mullite, mullite- A ceramic joined body shown in FIGS. 2 to 13 was produced in the same manner as in Example 1 except that alumina, alumina, or silicon nitride was used.

  About each obtained ceramics joined body, the same tendency as said Table 1 was recognized as a result of evaluating the damage incidence rate of the joining components at the time of 500 degreeC heating and after 500 times of the heat cycle (HC) tests of room temperature-500 degreeC, respectively. It was.

[Example 9]
Among the ceramic joined bodies produced in Example 1, the ceramic joined body of Sample 17 (on the side surface of the joined parts) in which an AlN ceramic member, an AlN intermediate joined part, and a joined part made of a mullite tubular body are joined. An inclined surface having an angle θ = 60 ° was placed in the chamber as a wafer holder.

The inside of the chamber was depressurized to 0.1 torr in an N ₂ atmosphere, and power was supplied from outside the system to the resistance heating element at a voltage of 20 V to raise the temperature of the wafer mounting surface to 500 ° C. When a Si wafer coated with a low-k SiO ₂ paste having a diameter of 300 mm is held on the wafer mounting surface of this wafer holder and heat-treated, a uniform film is baked and a film with stable characteristics is obtained. It was possible to continue making for one year.

It is general | schematic sectional drawing which shows the conventional ceramic joined body, (a) is a case where a joining component is a cylindrical body, (b) is a case where a joining component is a rod-shaped body. FIG. 2 is a schematic cross-sectional view showing a specific example using a bonded component having an inclined surface in a bonded structure of a ceramic bonded body according to the present invention. 1 is a schematic cross-sectional view showing a specific example using a joined part having a curved surface in a joined structure of a ceramic joined body according to the present invention. FIG. 3 is a schematic cross-sectional view showing a specific example using an intermediate bonded part in a bonded structure of a ceramic bonded body according to the present invention. FIG. 3 is a schematic cross-sectional view showing a specific example using an intermediate joined part and a joined part having a curved surface in a joined structure of a ceramic joined body according to the present invention. FIG. 3 is a schematic cross-sectional view showing a specific example using an intermediate bonded part and a bonded part having an inclined surface in a bonded structure of a ceramic bonded body according to the present invention. 1 is a schematic cross-sectional view showing a specific example using an intermediate bonded part having an inclined surface in a bonded structure of a ceramic bonded body according to the present invention. FIG. 3 is a schematic cross-sectional view showing a specific example using an intermediate bonded part having a curved surface in a bonded structure of a ceramic bonded body according to the present invention. FIG. 5 is a schematic cross-sectional view showing a specific example using a ceramic member provided with a protrusion in a bonded structure of a ceramic bonded body according to the present invention. FIG. 3 is a schematic cross-sectional view showing a specific example using a ceramic member provided with a protrusion and a bonded part having a curved surface in a bonded structure of a ceramic bonded body according to the present invention. FIG. 5 is a schematic cross-sectional view showing a specific example using a ceramic member provided with a protrusion and a bonded part having an inclined surface in a bonded structure of a ceramic bonded body according to the present invention. FIG. 3 is a schematic cross-sectional view showing a specific example using a ceramic member provided with a protrusion having an inclined surface in a bonded structure of a ceramic bonded body according to the present invention. FIG. 5 is a schematic cross-sectional view showing a specific example using a ceramic member provided with a curved protrusion in a single bonded structure of a ceramic bonded body according to the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Ceramic member 2 Resistance heating element 3, 4, 10, 11, 12, 13, 14, 15, 16, 17 Joining parts 20, 21, 22, 23, 24 Intermediate joining parts 25, 26, 27 Protrusion part

Claims (13)

  A bonded body in which a bonded part having different thermal conductivity is butt-bonded to a ceramic member whose temperature is raised to 100 ° C. or more, and a part of the side surface of the bonded part is bonded to the butt surface of the ceramic member A ceramic joined body having an inclined surface satisfying an angle θ of 0 ° <θ <90 ° and / or a curved surface satisfying a curvature R of R ≧ 5 mm.   A joined body in which a ceramic member heated to 100 ° C. or more and a joined part having different thermal conductivities are joined by inserting an intermediate joined part between the two, and the intermediate joined part is joined to the ceramic member and the joined part A ceramic joined body characterized by being butt joined to each other.   An inclined surface satisfying 0 ° <θ <90 ° with an angle θ formed with respect to a butt surface of the ceramic member and the intermediate bonded component on a part of a side surface of the bonded component and / or the intermediate bonded component, and / or The ceramic joined body according to claim 2, wherein the ceramic joined body has a curved surface with a curvature R satisfying R ≧ 5 mm.   A joined body in which a joined part having a different thermal conductivity is joined to a ceramic member whose temperature is raised to 100 ° C. or more. A projection is formed on the surface of the ceramic member, and the joined part is butt-joined on the projection surface. A ceramic joined body characterized by the above.   An inclined surface satisfying an angle θ of 0 ° <θ <90 ° with respect to the protruding portion of the ceramic member and / or a part of the side surface of the bonding component, and / or The ceramic joined body according to claim 4, wherein the ceramic joined body has a curved surface with a curvature R satisfying R ≧ 5 mm.   The ceramic joined body according to any one of claims 1 to 5, wherein the thermal conductivity of the joining component is lower than the thermal conductivity of the ceramic member and the intermediate joining component.   The ceramic joined body according to any one of claims 1 to 6, wherein the ceramic member has a thermal conductivity of 80 W / mK or more, and a joined component has a thermal conductivity of 20 W / mK or less.   The ceramic joined body according to claim 7, wherein the ceramic member has a thermal conductivity of 100 W / mK or more, and a joining component has a thermal conductivity of 5 W / mK or less.   The ceramic joined body according to any one of claims 1 to 8, wherein the joined part and the intermediate joined part are cylindrical bodies.   A wafer holding for a semiconductor manufacturing apparatus, comprising the ceramic joined body according to claim 1, wherein the ceramic member has a heating resistor, and the joined part and the intermediate joined part are cylindrical bodies. body.   11. The semiconductor manufacturing apparatus according to claim 10, wherein the ceramic member and the intermediate joint component are made of at least one ceramic selected from aluminum nitride, silicon carbide, alumina, and silicon nitride. Wafer holder.   12. The wafer for a semiconductor manufacturing apparatus according to claim 10, wherein the joining component is made of at least one ceramic selected from alumina, silicon nitride, mullite, and mullite-alumina composite. Holding body. A semiconductor manufacturing apparatus comprising the ceramic joined body according to claim 1 or the wafer holder according to claim 10.

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