JP2006269563A - Magnetoresistive element, thin film magnetic head, magnetic head device, and magnetic recording / reproducing apparatus - Google Patents

Abstract

An object of the present invention is to provide an MR element having a high (S / N) by improving the soft magnetic characteristics of a free layer while maintaining a high MR ratio.
A pinned layer is adjacent to one surface of a nonmagnetic conductive film, and a free layer is adjacent to the other surface of the nonmagnetic conductive film. The free layer 160 includes a first film 161, a second film 162, and a third film 163. The first film 161 is disposed between the second film 162 and the third film 163. The second film 162 and the third film 163 contain Co as a main component. The first film 161 contains Fe and Ni, and Ni in FeNi is in the range of 25 to 45 (at%).
[Selection] Figure 1

Description

  The present invention relates to a magnetoresistive element, a thin film magnetic head, a magnetic head device, and a magnetic recording / reproducing apparatus.

  Magnetoresistive elements (hereinafter referred to as MR elements) are used for magnetic memory elements, magnetic sensors, thin film magnetic heads, and the like. As the MR element, a giant magnetoresistive effect element (hereinafter referred to as GMR element) using a magnetic tunnel junction film (hereinafter referred to as TMR film) and a spin valve film (hereinafter referred to as SV film) is known.

  As is well known in Patent Documents 1 and 2, etc., a thin film magnetic head using a GMR element includes a magnetization free layer (free layer), a nonmagnetic conductive film, a magnetization pinned layer (pinned layer), and an antiferromagnetic film. Is included.

  The characteristics such as the output of the head are determined by the angle between the magnetization direction of the pinned layer and the magnetization direction of the free layer partitioned by the thin film of the nonmagnetic conductive film, and the soft magnetic characteristics. Therefore, a technique has been proposed in which the free layer has a three-layer structure to improve the MR ratio and soft magnetic characteristics. The technique described in Patent Document 1 is an example.

  Patent Document 2 discloses a first free magnetic layer in which a first main ferromagnetic layer and a first interface ferromagnetic layer are stacked, and a second free magnetic layer in which a second main ferromagnetic layer and a second interface ferromagnetic layer are stacked. A configuration is disclosed in which a nonmagnetic intermediate layer is disposed between the nonmagnetic intermediate layer, one surface of the nonmagnetic intermediate layer is adjacent to the first interface ferromagnetic layer, and the other surface is adjacent to the second interface ferromagnetic layer.

  However, even when the technique known in Patent Document 1 is applied, the value of the coercive force Hc that affects the soft magnetic characteristics reaches, for example, 1896 (A / m) or more, and a high MR ratio is maintained. It was difficult to reduce the coercive force Hc. When the coercive force Hc is high, S / N (signal / noise) is inevitably deteriorated, and an MR element with stable quality cannot be obtained with a high yield.

In addition, the free magnetic layer of Patent Document 2 has a synthetic structure, and when this free layer is applied to a dual type MR element, the magnetization directions of the upper and lower pinned layers must be antiparallel to each other, and the manufacturing process is complicated. It becomes.
JP 2002-185060 A JP 2003-324225 A

  An object of the present invention is to provide an MR element, a thin film magnetic head, a magnetic head device, and a magnetic recording / reproducing device having a high (S / N) by improving the soft magnetic characteristics of the free layer while maintaining a high MR ratio. That is.

  In order to solve the above-described problems, an MR element according to the present invention includes a pinned layer, a nonmagnetic conductive film, and a free layer. The pinned layer is adjacent to one surface of the nonmagnetic conductive film. The free layer is adjacent to the other surface of the nonmagnetic conductive film, and includes a first film, a second film, and a third film. The first film is disposed between the second film and the third film. The second film and the third film contain Co as a main component, the first film contains Fe and Ni, and Ni in FeNi is in the range of 25 to 45 (at%).

  The MR element according to the present invention includes a pinned layer, a nonmagnetic conductive film, and a free layer. That is, it is a GMR element. The pinned layer generates exchange coupling adjacent to the antiferromagnetic film, and the magnetization direction is pinned (fixed). The nonmagnetic conductive film is adjacent to one surface of the pinned layer, and the free layer is adjacent to the other surface of the nonmagnetic conductive film.

  In the above GMR element, when the magnetization direction of the free layer rotates in response to an external magnetic field, the resistance value of the GMR element increases according to the rotation angle of the magnetization direction of the free layer with respect to the fixed magnetization direction of the pinned layer. Change. Characteristics such as output of a thin film magnetic head or the like are determined by an angle formed by the magnetization direction of the pinned layer partitioned by the nonmagnetic conductive film and the magnetization direction of the free layer.

  The free layer includes a first film, a second film, and a third film. The first film is disposed between the second film and the third film. Here, as a feature of the present invention, the second film and the third film are mainly composed of Co, the first film contains Fe and Ni, and Ni in FeNi is 25 to 45 (at%). ). According to this film composition, it is possible to obtain an MR element with improved free magnetic properties and improved S / N while maintaining a high MR ratio.

  Preferably, the first film included in the free layer has a thickness of 1 nm or less. By selecting such a thin film thickness, the first film contains Fe and Ni, and combined with the fact that Ni in FeNi is set in the range of 25 to 45 (at%), the MR ratio is 17 to It falls within the range of the high value of 19.4 (%), and the coercive force Hc falls within the low value of 31.6 to 55.3 (A / m).

  In the case of the prior art having a three-layer film structure with respect to the film structure of the free layer, it is common to set Ni in FeNi to 80 (at%) or more, and the coercive force Hc in this case is 790 to The value is 1975 (A / m). From this result, the remarkable superiority of the present invention can be understood.

  In the MR element according to the present invention, in the free layer, the magnetization directions of the first film, the second film, and the third film are in the same direction. That is, synthetic. It is not a free structure.

  The MR element according to the present invention may be a dual type. In the dual type MR element, there are two pinned layers and two nonmagnetic conductive films.

  The first pinned layer and the first nonmagnetic conductive film are adjacent to each other, and the second pinned layer and the second nonmagnetic conductive film are adjacent to each other. The free layer is sandwiched between the first nonmagnetic conductive film and the second nonmagnetic conductive film.

  The present invention also discloses a thin film magnetic head, a magnetic head device, and a magnetic recording / reproducing apparatus using the MR element described above.

  As described above, according to the present invention, the soft magnetic characteristics of the free layer are improved while maintaining a high MR ratio, and the MR element, thin film magnetic head, magnetic head device, and magnetic recording / reproducing with a high S / N ratio are improved. An apparatus can be provided.

  Other objects, configurations and advantages of the present invention will be described in more detail with reference to the accompanying drawings. The accompanying drawings are merely examples.

1. MR Element FIG. 1 is a diagram showing a film structure of an MR element according to the present invention. The figure shows a GMR element including a pinned layer 140, an antiferromagnetic film 130, a nonmagnetic conductive film 150, and a free layer 160. The antiferromagnetic film 130 is provided adjacent to one surface of the base film (Buffer) 120 attached to the surface of the insulator 110. In the illustrated embodiment, the antiferromagnetic film 130 is made of an IrMn film, and the base film 120 is made of NiCr or the like.

  The pinned layer 140 includes a first ferromagnetic film 141, a second ferromagnetic film 143, and a nonmagnetic metal film 142. One surface of the first ferromagnetic film 141 is adjacent to the antiferromagnetic film 130 and generates exchange coupling. One surface of the second ferromagnetic film 143 is adjacent to one surface of the nonmagnetic conductive film 150. In the embodiment, the second ferromagnetic film 143 is made of CoFe. The first ferromagnetic film 141 is also made of the same CoFe. With this structure, synthetic. A pinned structure is obtained.

  One surface of the nonmagnetic metal film 142 is adjacent to the other surface of the second ferromagnetic film 143, and the other surface is adjacent to the first ferromagnetic film 141. The first ferromagnetic film 141 and the second ferromagnetic film 143 are exchange coupled via the nonmagnetic metal film 142 so that the magnetization directions are antiparallel to each other. In addition, exchange coupling is generated between the first ferromagnetic film 141 and the antiferromagnetic film 130 so as to fix the first ferromagnetic film 141 in one direction. The magnetization of 141 is fixed in the M11 direction, and the magnetization of the second ferromagnetic film 143 is magnetized M12 so as to be antiparallel to the magnetization M11 and pinned. The nonmagnetic metal film 142 is made of ruthenium Ru.

  One surface of the nonmagnetic conductive film 150 is adjacent to the second ferromagnetic film 143. One surface of the free layer 160 is adjacent to the other surface of the nonmagnetic conductive film 150. The free layer 160 in the illustrated embodiment is a laminated film of a first film 161 made of FeNi, a second film 162 made of CoFe, and a third film 163 made of CoFe, and the second film 162 is non-layered. Adjacent to the magnetic conductive film 150. The surface of the free layer 160 is covered with a protective film (Cap) 170 made of Ta or the like.

  For the film structures and composition materials of the nonmagnetic conductive film 150, the pinned layer 140, and the antiferromagnetic film 130, known techniques can be applied. For example, the pinned layer 140 is made of, for example, FeNi, FeNiCo, CoFe, or the like, and the antiferromagnetic film 130 is made of FeMn, MnIr, PtMn, NiMn, PtMnCr, or the like. The nonmagnetic conductive film 150 is made of a conductive material whose main component is Cu or the like.

  In the above GMR element, when the magnetization direction of the free layer 160 rotates in response to the external magnetic field, the magnetization direction of the free layer 160 in the pinned layer 140 with respect to the direction of the fixed magnetization M12 of the second ferromagnetic film 143. The resistance value of the GMR element changes greatly according to the rotation angle. The characteristics such as the output of the thin film magnetic head or the like are determined by the angle between the direction of the pinned magnetization M12 of the pinned layer 140 partitioned by the nonmagnetic conductive film 150 and the magnetization direction of the free layer 160.

  Further, since the pinned layer 140 has a synthetic pinned structure of the first ferromagnetic film 141 / nonmagnetic metal film 142 / second ferromagnetic film 143, the first ferromagnetic film 141 and the second strong film 140 Strong exchange coupling is provided between the magnetic film 143 and the exchange coupling force from the antiferromagnetic film 130 can be effectively increased. In this synthetic pinned structure, since the leakage magnetic field can be made zero in principle, it is easy to secure the operating point.

  As a characteristic configuration of the present invention, the first film 161 constituting the free layer 160 contains Fe and Ni, and Ni in FeNi is in the range of 25 to 45 (at%). According to the above film composition, an MR element with improved soft magnetic characteristics of the free layer 160 can be obtained while maintaining a high MR ratio.

  Preferably, the first film 161 has a thickness of 1 nm or less. By selecting such a thin film thickness, the first film 161 is coupled with the setting of Ni in FeNi in the range of 25 to 45 (at%), while maintaining the MR ratio at a high value, The coercive force Hc of the free layer 160 can be significantly reduced as compared with the conventional case. The thicknesses of the second film 161 and the third film 163 are preferably in the range of 0.5 to 1 nm.

  In the MR element according to the present invention, the free layer 160 includes the first film 161, the second film 162, and the third film 163 in which the magnetization directions are in the same direction. It is not a free structure.

  The MR element according to the present invention may be a dual type. Next, a specific example of the dual type MR element will be described with reference to the drawings.

  FIG. 2 is a diagram showing a film structure of a dual type MR element. The dual type MR element includes two pinned layers of a first pinned layer 140 and a second pinned layer 180, a first nonmagnetic conductive film 150, and a second nonmagnetic conductive film 151. It has two nonmagnetic conductive films.

  The first pinned layer 140 has one surface adjacent to one surface of the first nonmagnetic conductive film 150, one surface of the free layer 160 adjacent to the other surface of the first nonmagnetic conductive film 150, and the free layer 160. One surface of the second pinned layer 180 is adjacent to the other surface.

  The first pinned layer 140 and the second pinned layer 180 have the film structure shown in FIG. First, the first pinned layer 140 includes a first ferromagnetic film 141, a second ferromagnetic film 143, and a nonmagnetic metal film 142. One surface of the first ferromagnetic film 141 is adjacent to one surface of the antiferromagnetic film 130 to generate exchange coupling. The magnetization direction of the first ferromagnetic film 141 is fixed in the M11 direction by exchange coupling with the antiferromagnetic film 130.

  One surface of the nonmagnetic metal film 142 is adjacent to the other surface of the first ferromagnetic film 141, and one surface of the second ferromagnetic film 143 is adjacent to the other surface of the nonmagnetic metal film 142. One surface of the nonmagnetic conductive film 150 is adjacent to the other surface of the ferromagnetic film 143. With this structure, the first ferromagnetic film 141 and the second ferromagnetic film 143 are exchange-coupled through the nonmagnetic metal film 142 so that the magnetization directions are antiparallel to each other. Here, since the magnetization direction of the first ferromagnetic film 141 is fixed in the M11 direction by the antiferromagnetic film 130, the second ferromagnetic film 143 is connected to the M11 direction via the nonmagnetic metal film 142. Are pinned in the M12 direction, which is antiparallel.

  The second pinned layer 180 also has the same structure as the first pinned layer 140. That is, the second pinned layer 180 includes a third ferromagnetic film 181, a fourth ferromagnetic film 183, and a nonmagnetic metal film 182. One surface of the third ferromagnetic film 181 is adjacent to one surface of the antiferromagnetic film 131 to generate exchange coupling. The magnetization direction of the third ferromagnetic film 181 is fixed in the M21 direction by exchange coupling with the antiferromagnetic film 131.

  One surface of the nonmagnetic metal film 182 is adjacent to the other surface of the third ferromagnetic film 181, and one surface of the fourth ferromagnetic film 183 is adjacent to the other surface of the nonmagnetic metal film 182. One surface of the nonmagnetic conductive film 151 is adjacent to the other surface of the ferromagnetic film 183. With this structure, the third ferromagnetic film 181 and the fourth ferromagnetic film 183 are exchange-coupled via the nonmagnetic metal film 182 so that the magnetization directions are antiparallel to each other. Here, since the magnetization direction of the third ferromagnetic film 181 is fixed in the M21 direction by the antiferromagnetic film 131, the fourth ferromagnetic film 183 has the M21 direction through the nonmagnetic metal film 182. Are pinned in the M22 direction, which is antiparallel.

  In the dual type GMR element described above, when the magnetization direction of the free layer 160 rotates in response to the external magnetic field, the second ferromagnetic film 143 and the second ferromagnetic film 143 in the first pinned layer 140 and the second pinned layer 180 The resistance value of the GMR element changes greatly according to the rotation angle of the magnetization direction of the free layer 160 with respect to the directions of the fixed magnetizations M12 and M22 of the fourth ferromagnetic film 183. The characteristics such as the output of the thin film magnetic head or the like are determined by the angle formed by the magnetization M12 of the first pinned layer 140 and the magnetization M22 of the second pinned layer 180 and the magnetization direction of the free layer 160.

  The first pinned layer 140 has a synthetic pinned structure of the first ferromagnetic film 141 / nonmagnetic metal film 142 / second ferromagnetic film 143. Therefore, strong exchange coupling is provided between the first ferromagnetic film 141 and the second ferromagnetic film 143, and the exchange coupling force from the antiferromagnetic film 130 can be effectively increased.

  The second pinned layer 180 also has a synthetic pinned structure of the third ferromagnetic film 181 / nonmagnetic metal film 182 / fourth ferromagnetic film 183. Therefore, strong exchange coupling is provided between the third ferromagnetic film 181 and the fourth ferromagnetic film 183, and the exchange coupling force from the antiferromagnetic film 131 can be effectively increased.

  Also in the dual type MR element, the first film 161 constituting the free layer 160 contains Fe and Ni, and Ni in FeNi is set in a range of 25 to 45 (at%). The first film 161 is set to a thickness of 1 nm or less. By selecting such a thin film thickness, the MR ratio of the first film 161 is set to 17 to 19.4 (%) in combination with the setting of Ni in FeNi in the range of 25 to 45 (at%). ) And the coercive force Hc falls within a low value of 31.6 to 55.3 (A / m).

  Regarding the film structure of the free layer 160, in the case of the conventional technique having a three-layer film structure, Ni in FeNi is generally set to 80 (at%) or more. In this case, the coercive force Hc is 790. It becomes a value of ~ 1975 (A / m). From this result, the remarkable superiority of the present invention can be understood.

Next, the effect of the MR element according to the present invention will be described with reference to data.
<About Samples 1-20>
In the dual type MR element having the structure shown in FIG. 2, the film structure is as follows.
Underlayer 120; NiCr film with a thickness of 4 nm First antiferromagnetic film 130; IrMn film with a thickness of 7.0 nm First pinned layer 140
First ferromagnetic film 141; CoFe film with a thickness of 1.5 nm
Nonmagnetic metal film 142; Ru film with a thickness of 0.8 nm Second ferromagnetic film 143; CoFe film with a thickness of 1.5 nm First nonmagnetic conductive film 150; Cu film with a thickness of 1.7 nm Free layer 160
First film 161; refer to Table 1 for FeNi, film thickness and composition ratio
Second film 162; see Table 1 for CoFe, film thickness and composition ratio
3rd film | membrane 163; See Table 1 for CoFe, film thickness, and composition ratio 2nd nonmagnetic electrically conductive film 151; Cu film | membrane with a film thickness of 1.7 nm 2nd pinned layer 180
Third ferromagnetic film 181; CoFe film with a thickness of 1.5 nm
Nonmagnetic metal film 182; Ru film with a thickness of 0.8 nm Fourth ferromagnetic film 183; CoFe film with a thickness of 1.5 nm Second antiferromagnetic film 131; IrMn film with a thickness of 7 nm In the film configuration described above Samples were manufactured by changing the Ni content and film thickness of the first film 161 constituting the free layer 160. The film thicknesses of the second film 162 and the third film 163 were changed as shown in Table 1. About the obtained samples 1-20, MR ratio and coercive force Hc were measured. The obtained measurement data is shown in Table 1.

<About Samples 21 and 22>
Samples 1 to 1 except that the Ni content of the first film 161 in the free layer 160 is set outside the scope of the present invention, or the film thickness of the first film 161 is set as an implementation exception of the present invention. Samples 21 and 22 were obtained in the same manner as in Example 20. The MR ratio and coercive force Hc of samples 21 and 22 were measured. Table 1 shows the results.

  Referring to Table 1, in the first film 161 constituting the free layer 160, Samples 21 and 22 in which Ni in FeNi is 83 (at%) are 17.9 (%) and 17.0 ( %), The coercive force Hc is as high as 1896 (A / m) and 1067 (A / m), respectively, and the soft magnetic properties are poor. This means that an MR element excellent in S / N cannot be manufactured with high productivity.

  In contrast, in the first film 161, samples 1 to 20 in which Ni in FeNi is in the range of 25 to 45 (at%) have a coercive force Hc of 31.6 to 55.3 (A / m). ) And low. In addition, Samples 1 to 17 in which the thickness of the first film 161 is in the range of 1 nm or less have a high MR ratio of 17 to 19.4 (%).

  From the above results, according to the present invention, it is clear that the soft magnetic characteristics of the free layer 160 can be improved while maintaining a high MR ratio, and high-quality MR elements with high S / N can be mass-produced with high yield. From the comparison with the prior art, the significant advantages of the present invention can be understood.

  Next, the S / N scatter ratio, which is a yield index from the point of S / N, will be described with reference to data.

  For the samples 3, 5, 7, 8, 11, and 12 of the above-described examples and the sample 22 of the comparative example, n = 100 samples were prepared for each sample, and the relationship between the reproduction output and S / N was measured. Then, a reference value of S / N to be satisfied in each reproduction output is set, and a ratio (X / n) between the number X having a lower S / N than the reference value and the total number n is obtained. N scatter ratio. The results are shown in Table 2. The reproduction output is an average value of n = 100.

  Examining the S / N scatter ratio in Table 2, in the sample 22 of the comparative example, the equivalent to defective products reaches 28%, whereas the samples 3, 5, and 7 of the examples according to the present invention. , 8, 11, and 12, the number corresponding to defective products is 2 to 6 (%), which is an extremely low number. That is, an MR element having an excellent S / N can be obtained with a high yield.

2. 3 is a plan view of the thin film magnetic head according to the present invention on the side of the medium facing surface, FIG. 4 is a front sectional view of the thin film magnetic head shown in FIG. 3, and FIG. 5 is a thin film shown in FIGS. It is an expanded sectional view of the element part of a magnetic head. In any of the drawings, dimensions, proportions, etc. are exaggerated or omitted for convenience of illustration.

The illustrated thin film magnetic head includes a slider base 5 and electromagnetic transducers 4 and 30. The slider base 5 is made of a ceramic material such as AlTiC (Al ₂ O ₃ —TiC), for example, and has a geometric shape for controlling the flying characteristics on the medium facing surface. As a representative example of such a geometric shape, in the embodiment, a first step portion 51, a second step portion 52, a third step portion 53, and a fourth step are formed on the base surface 50 of the slider base 5. The example provided with the part 54 and the 5th step part 55 is shown. The basal plane 50 serves as a negative pressure generating portion with respect to the air flow direction indicated by the arrow A, and the second step portion 52 and the third step portion 53 constitute a stepped air bearing rising from the first step portion 51. To do. The surface of the 2nd step part 52 and the 3rd step part 53 becomes ABS100.

  The fourth step portion 54 rises in a step shape from the base surface 50, and the fifth step portion 55 rises in a step shape from the fourth step portion 54. The electromagnetic conversion elements 4 and 30 are provided in the fifth step portion 55.

  The electromagnetic conversion element includes an MR element 30 constituting a reproducing element and a recording element 4. The recording element 4 is, for example, an inductive magnetic conversion element, and the writing magnetic pole end faces the ABS 100. The recording element 4 is disposed in the vicinity of the MR element 30 constituting the reproducing element and is covered with a protective film 49.

  The recording element 4 includes a lower magnetic pole film 41, an upper magnetic pole film 45, a recording gap film 42, and thin film coils 43 and 47. The lower magnetic pole film 41 is magnetically coupled to the upper magnetic pole film 45. The recording gap film 42 is provided between the magnetic pole part of the lower magnetic pole film 41 and the magnetic pole part of the upper magnetic pole film 45. The thin film coils 43 and 47 are disposed in an insulated state in an insulating film 48 in an inner gap between the lower magnetic pole film 41 and the upper magnetic pole film 45. The recording element 4 is not limited to the above form, and can take various forms.

  In the illustrated embodiment, in addition to the MR element 30, the first shield film 460, the first and second gap films 461 and 462, the second shield film 463, and the insulating film 464 include the recording element 4, It is arranged between the slider base 5. The MR element 30 includes the SV film shown in FIGS. Therefore, according to this embodiment, all the operational effects of the MR element described with reference to FIGS.

  FIG. 6 shows an embodiment in which the MR element shown in FIG. 1 is used. The MR element 30 includes magnetic domain control films 33 and 34 and lead electrode films 35 and 36. The lead electrode films 35 and 36 are provided on the magnetic domain control films 33 and 34.

  The magnetic domain control films 33 and 34 are for preventing Barkhausen noise of the first film 161 to the third film 163 constituting the free layer. In addition to using a hard magnetic film, the magnetic domain control films 33 and 34 are stronger than the antiferromagnetic film. An exchange coupling film with a magnetic film may be used. The lead electrode films 35 and 36 are for supplying a sense current and are made of, for example, Au.

  In the thin film magnetic head described above, the first film 161 constituting the free layer contains Fe and Ni, and Ni in FeNi is set in the range of 25 to 45 (at%), and the film thickness is The range is set to 1 nm or less. Therefore, the effect of the present invention can be obtained. Although not shown, the MR element shown in FIG. 2 can be used in accordance with the arrangement shown in FIG.

3. 7 is a front view of a magnetic head device according to the present invention, and FIG. 8 is a bottom view of the magnetic head device shown in FIG. The illustrated magnetic head device includes the thin film magnetic head 400 shown in FIGS. 3 to 6 and the head support device 6. The head support device 6 has a flexible body 62 made of a metal thin plate attached to a free end at one end in the longitudinal direction of a support body 61 made of a thin metal plate, and a thin film magnetic head 400 attached to the lower surface of the flexible body 62. It has a structure.

  Specifically, the flexible body 62 connects the two outer frame portions 621 and 622 extending substantially parallel to the longitudinal axis of the support body 61 and the outer frame portions 621 and 622 at the end away from the support body 61. And a tongue-like piece 624 extending from a substantially central portion of the horizontal frame 623 so as to be substantially parallel to the outer frame portions 621 and 622 and having a free end at the tip. One end of the side opposite to the direction in which the horizontal frame 623 is present is attached to the vicinity of the free end of the support 61 by means such as welding.

  For example, a hemispherical load protrusion 625 is provided on the lower surface of the support 61. The load projection 625 transmits a load force from the free end of the support 61 to the tongue-like piece 624.

  The thin film magnetic head 400 is attached to the lower surface of the tongue-like piece 624 by means such as adhesion. The thin film magnetic head 400 is supported so that pitch operation and roll operation are allowed.

  The head support device 6 applicable to the present invention is not limited to the above-described embodiments, and head support devices that have been proposed or may be proposed in the future can be widely applied. For example, a support body 61 and a tongue-like piece 624 integrated with a flexible polymer wiring board such as a tab tape (TAB) can be used. Moreover, what has a conventionally well-known gimbal structure can be used freely.

  The thin-film magnetic head 400 has the MR elements shown in FIGS. 1 and 2 and has the structure shown in FIGS. 3 to 6. Therefore, the magnetic head device shown in FIGS. 1. There exists an effect demonstrated with reference to FIG.

4). Magnetic Recording / Reproducing Device FIG. 9 is a perspective view of a magnetic recording / reproducing device (magnetic disk device) using the magnetic head device shown in FIGS. The illustrated magnetic recording / reproducing apparatus includes a magnetic disk 71 rotatably provided around an axis 70, a thin film magnetic head 72 that records and reproduces information on the magnetic disk 71, and a thin film magnetic head 72 that is magnetized. An assembly carriage device 73 for positioning on the track of the disk 71 is provided.

  The assembly carriage device 73 is mainly composed of a carriage 75 that can be rotated about a shaft 74 and an actuator 76 that is, for example, a voice coil motor (VCM) that drives the carriage 75 to rotate.

  A base portion of a plurality of drive arms 77 stacked in the direction of the shaft 74 is attached to the carriage 75, and a head suspension assembly 78 on which a thin film magnetic head 72 is mounted is fixed to the distal end portion of each drive arm 77. ing. Each head suspension assembly 78 is provided at the tip of the drive arm 77 so that the thin film magnetic head 72 at the tip of the head suspension assembly 78 faces the surface of each magnetic disk 71.

  The drive arm 77, the head suspension assembly 78, and the thin film magnetic head 72 constitute the magnetic head device described with reference to FIGS. The thin film magnetic head 72 has the MR elements shown in FIGS. 1 and 2 and has the structure shown in FIGS. 3 to 6. Therefore, the magnetic recording / reproducing apparatus shown in FIG. The effects described with reference to FIGS. 2 and 6 are achieved.

  Although the contents of the present invention have been specifically described above with reference to the preferred embodiments, it is obvious that those skilled in the art can take various modifications based on the basic technical idea and teachings of the present invention. It is.

It is a figure which shows the film | membrane structure of MR element based on this invention. It is a figure which shows the film | membrane structure of a dual type MR element. 2 is a plan view of the thin film magnetic head according to the present invention on the medium facing surface side. FIG. FIG. 4 is a front sectional view of the thin film magnetic head shown in FIG. 3. FIG. 5 is an enlarged cross-sectional view of an element portion of the thin film magnetic head shown in FIGS. 3 and 4. It is an Example at the time of using the MR element shown in FIG. 1 is a front view of a magnetic head device according to the present invention. FIG. 8 is a bottom view of the magnetic head device shown in FIG. 7. 9 is a perspective view of a magnetic recording / reproducing apparatus using the magnetic head device shown in FIGS. 7 and 8. FIG.

Explanation of symbols

130 antiferromagnetic film 140 pinned layer 141 first ferromagnetic film 142 nonmagnetic metal film 143 second ferromagnetic film 150 nonmagnetic conductive film 160 free layer 161 first film 162 second film 163 third film

Claims (11)

A magnetoresistive effect element including a pinned layer, a nonmagnetic conductive film, and a free layer,
The pinned layer is adjacent to one surface of the nonmagnetic conductive film,
The free layer is adjacent to the other surface of the nonmagnetic conductive film, and includes a first film, a second film, and a third film,
The first film is disposed between the second film and the third film;
The second film and the third film are mainly composed of Co,
The first film includes Fe and Ni, and Ni in FeNi is in a range of 25 to 45 (at%).
Magnetoresistive effect element.   2. The magnetoresistive effect element according to claim 1, wherein the first film has a film thickness in a range of 1 nm or less.   3. The magnetoresistance effect element according to claim 1, wherein the second film and the third film have a film thickness in a range of 0.5 to 1 nm.   4. The magnetoresistive element according to claim 1, wherein the pinned layer has a synthetic structure. 5.   5. The magnetoresistive element according to claim 1, wherein the pinned layer is adjacent to an antiferromagnetic film.   6. The magnetoresistive element according to claim 1, wherein in the free layer, the magnetization directions of the first film, the second film, and the third film are in the same direction. Magnetoresistive effect element. The magnetoresistive effect element according to any one of claims 1 to 6,
Having two combinations of the pinned layer and the nonmagnetic conductive film,
The free layer is sandwiched between each combination of the pinned layer and the nonmagnetic conductive film, and both surfaces are adjacent to the nonmagnetic conductive film.
Magnetoresistive effect element. A thin film magnetic head including a magnetoresistive element and a slider,
The magnetoresistive effect element is described in any one of claims 1 to 7,
The slider supports the magnetoresistive element;
Thin film magnetic head.   9. The thin film magnetic head according to claim 8, further comprising a writing element. A magnetic head device including a thin film magnetic head and a head support device,
The thin film magnetic head is the one described in claim 8 or 9,
The head support device supports the thin film magnetic head;
Magnetic head device. A magnetic recording / reproducing apparatus including a magnetic head device and a magnetic disk,
The magnetic head device is the one described in claim 10.
The magnetic disk writes and reads magnetic records in cooperation with the magnetic head device.
Magnetic recording / reproducing device.

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