JP2007122027A - Laser processing apparatus, exposure apparatus and exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure apparatus and an exposure method in which direct writing can be performed at a high speed without using a photomask and low cost can be achieved. <P>SOLUTION: The exposure apparatus includes a stage 10 for holding a substrate 8 to be exposed; a direct writing mask 6 arranged above the substrate 8 to be exposed held by the stage 10; a repeated opening pattern in which a plurality of openings each having approximately the same size are arranged in a line at approximately the same interval, provided to the mask; an irradiation mechanism for irradiating with a linear laser beam 1c along the repeated opening pattern; and a movement mechanism for moving a relative position of a laser beam which is formed in such a way that the linear laser beam projected by the irradiating mechanism passes through the plurality of openings of the opening pattern and the substrate held by the stage. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a laser processing apparatus, an exposure apparatus, and an exposure method, and more particularly, to a laser processing apparatus, an exposure apparatus, and an exposure method that can perform direct drawing at high speed without using a photomask and can realize cost reduction.

  In the past, large televisions were expected to be separated from PDPs (Plasma Display Panels), and small and medium-sized televisions were separated from LCD televisions. However, since the image quality of liquid crystal televisions is better than that of PDPs, and the lifespan of PDPs is shorter than that of liquid crystals, the breakthroughs of liquid crystal televisions have recently made remarkable progress and have begun to target the 30-inch or larger large-sized television market. For this reason, a liquid crystal factory using a large glass substrate of 2 m square has been set up.

Photolithography technology plays an active role in forming electronic circuits on large glass substrates. A photomask adapted to the specifications and design of the display device is prepared in advance, and the photoresist is exposed by irradiating exposure light through the photomask. With this technology, electronic circuits miniaturized to the size of a micrometer can be integrated on a large scale (see, for example, Patent Document 1).
JP-A-8-250401

  Since it is technically difficult to manufacture an exposure apparatus that can use a large photomask that matches the size of the substrate with a 2 m square class large glass substrate, a small photomask is used for step-and-repeat processing. Therefore, much time was spent on the exposure process. In addition, it is difficult to connect the steppers in the exposure apparatus, and a lot of time is spent on the repair (joining and repairing) process, and the exposure process is a factor in increasing the cost. In addition, a new photomask must be produced every time the product is changed to a new product, and the production of a new photomask is also a factor in increasing the cost.

  On the other hand, as a method of performing exposure without a photomask, a direct drawing apparatus using an electron beam or a laser beam has been proposed, but as is well known, the tact is so bad that exposure is performed using the above photomask. Cost reduction cannot be realized as compared with the method. In addition, the method using a polygon lens or a galvano lens achieves relatively high-speed drawing, but the speed and drawing accuracy are in a trade-off relationship, which replaces the above-described exposure apparatus using a photomask. Not level. Although an exposure apparatus using a DMD (Digital Micro mirror Device) element has a future, there is no apparatus that can satisfy both the tact and the accuracy as the exposure apparatus using the photomask.

  The present invention has been made in consideration of the above-described circumstances, and a purpose thereof is a laser processing apparatus capable of directly drawing at high speed without using a photomask and realizing cost reduction, specifically exposure. An apparatus and an exposure method are provided.

  In order to solve the above problems, a laser processing apparatus according to the present invention includes a stage for holding a substrate, a mask disposed above the substrate held on the stage, and substantially the same provided on the mask. A plurality of openings having a size are arranged in a line and at least one opening pattern in which the interval between the openings is substantially the same, a laser processing mechanism for forming a linear laser beam, and the laser processing mechanism And a moving mechanism for moving a relative position between the laser beam formed by the linear laser beam having passed through the plurality of openings of the opening pattern and the substrate held on the stage. It is characterized by that. In the present specification, “substantially the same” means that there is a statistical variation, and it is considered that the deviation from the design value is usually within several percent. This difference in variation can be obtained from the mathematical expression represented by the expression (1). In this specification, if the difference in variation obtained from this mathematical expression is within 5%, it is described as the same (or substantially the same).

In the laser processing apparatus according to the present invention, there may be a plurality of types of opening patterns.
In the laser processing apparatus according to the present invention, each of the plurality of openings may be circular, elliptical, or polygonal.
In the laser processing apparatus according to the present invention, it is preferable that an irradiation area where the linear laser beam formed by the laser processing mechanism is irradiated on the mask is wider than the one opening pattern.

  The laser processing apparatus according to the present invention may further include a light shielding mechanism that shields a part of the linear laser beam irradiated to the opening pattern.

  In order to solve the above-described problems, an exposure apparatus according to the present invention includes a stage for holding an exposure target substrate, a direct writing mask disposed above the exposure target substrate held on the stage, and the direct writing mask. Laser processing for forming a linear laser beam and at least one opening pattern provided in the mask, in which a plurality of openings having substantially the same size are arranged in a line and the intervals between the plurality of openings are substantially the same Relative to the exposure target substrate held on the stage and the laser beam formed by the linear laser beam formed by the laser processing mechanism passing through the plurality of openings of the opening pattern. And a moving mechanism for moving the position.

In the exposure apparatus according to the present invention, a plurality of the opening patterns may be provided, and the plurality of opening patterns may have a plurality of types of opening shapes and opening intervals.
In the exposure apparatus according to the present invention, each of the plurality of openings may be circular, elliptical, or polygonal.
In the exposure apparatus according to the present invention, it is preferable that an irradiation area where the linear laser beam formed by the processing mechanism is irradiated onto the direct drawing mask is wider than the one opening pattern.

  The exposure apparatus according to the present invention may further include a light shielding mechanism that shields part of the linear laser beam.

  The exposure method according to the present invention provides a direct drawing mask provided with an opening pattern in which a plurality of openings having substantially the same size are arranged in a line and the intervals between the openings are substantially the same, A linear laser beam is irradiated onto the direct writing mask so as to follow the opening pattern, and the irradiated linear laser beam passes through the openings of the opening pattern and passes through the openings. The linear laser beam thus formed is formed as an exposure laser beam, and the relative position between the exposure laser beam and the exposure target substrate is moved while the exposure laser beam is irradiated onto the exposure target substrate. In this case, direct exposure is performed.

In the exposure method according to the present invention, each of the plurality of openings may be circular, elliptical, or polygonal.
In the exposure method according to the present invention, it is preferable that an irradiation area when irradiating the linear laser beam along the opening pattern is wider than a plurality of openings of the opening pattern.

  In the exposure method according to the present invention, when irradiating the linear laser beam along the opening pattern, a part of the linear laser beam can be shielded.

  As described above, according to the present invention, a laser processing apparatus and an exposure apparatus that can perform direct drawing at high speed without using a photomask and eliminate the need for a period and cost for producing a new mask. And an exposure method can be provided.

Embodiments of the present invention will be described below with reference to the drawings.
(Embodiment 1)
FIG. 1 is a perspective view showing the configuration of an exposure apparatus for direct drawing according to Embodiment 1 of the present invention. 2A is a cross-sectional view showing a direct drawing mask 6 (mask functioning as a slit) of the exposure apparatus shown in FIG. 1, and FIG. 2B is a direct drawing mask shown in FIG. It is sectional drawing which shows the modification of a mask, FIG.2 (C) is sectional drawing which shows the other modification of the mask for direct drawing shown to FIG. 2 (A). FIG. 3 is a perspective view schematically showing a direct drawing mask of the exposure apparatus shown in FIG. 1 and a state in which an exposure linear laser beam is supplied to the direct drawing mask. FIG. 4 is an enlarged plan view of a part A of the direct drawing mask shown in FIG. FIG. 5 is a sectional view schematically showing a state in which a linear laser beam for exposure is supplied to the direct drawing mask shown in FIG. 1 to expose the photoresist.

  The exposure apparatus for direct drawing shown in FIG. 1 has a light source 1, and this light source 1 oscillates an excimer laser beam. Although the excimer laser beam light source 1 is used here, the present invention is not limited to this, and other light sources such as an ultrahigh pressure Hg lamp, an X-ray, an ion beam, an electron beam, a solid state laser, and a gas laser are used. It is also possible to use a light source such as a semiconductor laser. In addition, when using an ultrahigh pressure Hg lamp as a light source, the linear laser light source system 2, the mirror 3, and the doublet cylindrical lens 4 do not need to be used. In this specification, the linear laser optical system 2, the mirror 3, the doublet cylindrical lens 4 and the like for forming a linear laser are collectively referred to as an irradiation mechanism (laser processing mechanism). The irradiation mechanism is not limited to the one shown here. For example, the doublet cylindrical lens may be a triplet cylindrical lens or the like.

  The laser beam oscillated from the light source 1 is introduced into the linear laser optical system 2 through the on / off mechanism 2a. In the on / off mechanism 2a, the laser beam is introduced into the linear laser optical system 2 when the on / off mechanism 2a is in the on state, and the laser beam is linear laser optical when the on / off mechanism 2a is in the off state. It acts so as not to be introduced into the system 2. The linear laser optical system 2 includes first to third cylindrical lens arrays, and first and second cylindrical lenses.

  The laser beam introduced from the light source 1 into the linear laser optical system 2 is applied perpendicularly to the first cylindrical lens array, and the laser beam is divided into four in one direction. Next, this four-divided laser beam is applied perpendicularly to the second cylindrical lens array and divided into seven in the second direction (direction perpendicular to the first direction). Next, this seven-divided laser beam is applied perpendicularly to the third cylindrical lens array and divided into four in the third direction (the same as the first direction). These divided laser beams are combined into one by an optical element such as a doublet cylindrical lens. Thereby, the energy in the longitudinal direction of the linear laser beam is homogenized, and the length in the longitudinal direction of the linear laser beam is determined.

  The laser beam 1 a synthesized by the linear laser optical system 2 as described above is reflected by the mirror 3. Next, the reflected laser beam 1b is condensed again into one laser beam 1c by the doublet cylindrical lens 4 on the irradiation surface. The doublet cylindrical lens 4 is a lens composed of two cylindrical lenses. Thereby, the energy in the short direction of the linear laser beam is homogenized, and the length in the short direction is determined.

  The linear laser beam 1c condensed by the doublet cylindrical lens 4 as described above is directly applied to the drawing mask 6 through the slit 5 which is a light shielding mechanism for shielding the laser beam. The slit 5 moves as shown by an arrow to determine the length of the linear laser beam that reaches the drawing mask 6 directly. That is, the slit 5 determines the exposure range. The direct writing mask 6 has an alignment marker 7, and the alignment marker 7 can directly align the drawing mask 6. The linear laser beam 1c is focused on the direct drawing mask 6 so that the width is about 100 to 500 μm and the length is about 10 to 200 cm. Note that the shape of the linear laser beam may be a rectangular shape or an elliptical shape.

As shown in FIG. 2A, the direct drawing mask 6 is formed by forming, for example, a chromium film as a metal film 6b under a quartz substrate 6a and providing a plurality of openings 6c in the chromium film. The direct drawing mask 6 has a thickness t of about 0.3 to 2 mm, and its planar shape is a quadrangle with a side length of about 100 to 2000 mm as shown in FIG. The direct drawing mask 6 is arranged so that the surface thereof is irradiated with the linear laser beam 1c.
In the present embodiment, as shown in FIG. 2A, the side surface of the metal film 6b of the direct writing mask is perpendicular to the surface of the quartz substrate 6a. However, the present invention is not limited to this. Instead, the side surface of the metal film may have a shape (tapered shape) having an angle with respect to the surface of the quartz substrate. For example, the side surface of the metal film 6d may have a tapered shape with an acute angle with respect to the surface of the quartz substrate 6a as shown in FIG. 2B, or the side surface of the metal film 6e as shown in FIG. However, a tapered shape having an obtuse angle with respect to the surface of the quartz substrate 6a may be used. The linear laser beam is preferably selected to have a shape that reduces the spread of the beam after passing directly through the drawing mask.

  The plurality of openings of the direct writing mask 6 have the same size or the same shape (for example, a polygon such as a circle, an ellipse, a square, a rectangle, and a rectangle) along the longitudinal direction of the irradiated linear laser beam. A plurality of opening patterns are arranged in a line, and the interval (space) between adjacent openings is constant. That is, repeated opening patterns having the same opening size and the same opening interval (opening pattern period) are arranged along the longitudinal direction of the linear laser beam. Further, a plurality of repetitive opening patterns which are the repetitive opening patterns as described above and whose opening sizes and intervals are changed are arranged in the short direction of the linear laser beam of the direct writing mask 6. . The length of the opening is shorter than the length of the linear laser beam in the short direction. Further, even if an attempt is made to produce a direct writing mask having the same size or the same interval as designed, there may be slight variations in the size of the openings or the interval between the openings. However, in this specification, if the difference in variation in the size of the opening and the interval between the openings is within 5%, it can be used as the direct writing mask of the present invention.

  Specifically, first to sixth repetitive opening patterns are arranged in order from the top in a part A of the direct drawing mask 6 shown in FIG. Specifically, in part A, the first repetitive opening pattern in which the size of the opening 6c is φ1 and the space between the openings is S1 is arranged. Under this first repetitive opening pattern, a second repetitive opening pattern in which the size of the opening 6c is φ1 and the space between the openings is S2 is arranged. A third repetitive opening pattern in which the size of the opening 6c is φ1 and the space between the openings is S3 is disposed under the second repetitive opening pattern. Under the third repetitive opening pattern, a fourth repetitive opening pattern in which the size of the opening 6c is φ2 and the space between the openings is S1 is arranged. Under the fourth repetitive opening pattern, a fifth repetitive opening pattern in which the size of the opening 6c is φ2 and the space between the openings is S2 is arranged. Under the fifth repeated opening pattern, a sixth repeated opening pattern in which the size of the opening 6c is φ2 and the space between the openings is S3 is arranged.

  For example, when the size φ of the opening is 2 μm, the space S between adjacent openings is 100 μm, and the size of the direct writing mask is 1000 mm × 1000 mm, one repetitive opening pattern has 10,000 openings (holes ). In addition, when the interval between the openings is very narrow, a phase shift mask can be used. In addition, the incident light may be converged by combining the microlens array or etching the quartz portion of the photomask to change the direction of the incident light.

  Further, the direct drawing mask 6 is formed with a repetitive opening pattern having an opening having variously changed sizes in a range of, for example, 1 μm to 50 μm and a space between openings having variously changed in a range of, for example, 10 μm to 500 μm. It is preferable that By using the direct drawing mask 6 on which such a repetitive opening pattern is formed, a repetitive pattern having a minimum width of 0.1 μm or more and a pattern interval (pitch) of 1 μm to 1000 μm can be directly drawn.

  In addition, the linear laser beam 1c is irradiated to the 4th repeating opening pattern. The irradiation region 1d is a region that completely includes the opening and is wider than the opening. Thereby, the beam intensity of the laser beam 1c through which the linear laser beam 1c passes through the opening can be sufficiently increased. In addition, the linear laser beam 1c has an intensity distribution as shown in FIG. 3 (the x axis is the longitudinal direction of the linear laser beam 1c, the y axis is the short direction of the linear laser beam 1c, and the z axis is the linear laser beam intensity. When the beam intensity distribution in the y-axis direction is approximated by a normal distribution, the size φ of the opening of the direct writing mask 6 is preferably smaller than 4σ.

  As shown in FIG. 1, the linear laser beam 1 c irradiated on the direct writing mask 6 passes through the opening 6 c of the direct writing mask 6 and is irradiated on the substrate 8. Specifically, as shown in FIG. 5, the substrate 8 is a glass substrate 8a having a photoresist film 8b on the surface. The photoresist film 8b of the substrate 8 is irradiated with an exposure laser beam 1e formed in the pattern shape of the opening 6c. Thereby, the photoresist film 8b is exposed. Further, the substrate 8 is disposed in the vicinity of the direct writing mask 6 and has a configuration in accordance with the same-size exposure machine. Here, the configuration is based on a 1 × magnification exposure machine, but a configuration in which a projection lens system is inserted directly between the mask 6 for drawing and the substrate 8 may be adopted. The exposure apparatus also has a height sensor (not shown) that detects the height position of the direct writing mask 6 from the substrate 8. The distance between the direct writing mask 6 and the substrate 8 can be accurately controlled by this height sensor.

  The substrate 8 has an alignment marker 9 as shown in FIG. 1, and the alignment marker 9 can align the substrate. Although the substrate 8 applied to the glass substrate 8a is used here, other substrates such as a silicon wafer and a quartz glass substrate can also be used. The substrate 8 is held on a stage 10, and this stage 10 is fixed on a vibration isolator (not shown). The stage 10 is configured to be movable in the horizontal direction as indicated by an arrow by a moving mechanism (not shown).

  The direct drawing exposure apparatus in FIG. 1 includes a control unit (not shown), and this control unit controls the operation of the exposure apparatus described later. Specifically, the control unit controls the oscillation of the excimer laser beam from the light source 1, the movement of the slit 5, the movement of the stage, and the like.

Next, a method for performing exposure using the above-described direct drawing exposure apparatus will be described.
First, a direct drawing mask 6 is prepared. The direct drawing mask 6 is directly drawn if the pattern formed on the photoresist film by exposure is a repetitive pattern in which patterns of the same shape are arranged at the same intervals like the pixel portion of a display device such as liquid crystal or EL. Is something that can be done.

  Next, the substrate 8 that is the object to be exposed is held on the stage 10. This substrate 8 is obtained by forming a photoresist film 8b on a glass substrate 8a for forming a pattern of pixel portions (for example, a pixel pitch of 300 μm).

  Next, among the repetitive opening patterns of the direct writing mask 6, a repetitive opening pattern having a space between the openings of 300 μm is selected. As for the size of the opening, an appropriate size is selected in consideration of the tact of exposure and the edge shape of the pattern. That is, the larger the size of the opening, the better the tact of exposure, but it is not possible to draw the edge of the pattern sharply. A program for automatically selecting an appropriate size may be prepared, and switching may be automatically performed by the program. Next, the substrate 8 and the direct drawing mask 6 are aligned by the alignment markers 7 and 9 so that the pixel region to be exposed is positioned below the selected repetitive opening pattern. Further, the irradiation range of the linear laser beam is determined by moving the slit 5. An area that is not a repetitive opening pattern such as a drive circuit can block light by the slit 5.

  Next, a linear laser beam 1c is irradiated on the repetitive opening pattern. As a result, the exposure laser beam 1e that has passed through the opening 6c of the direct writing mask 6 is irradiated onto the photoresist film 8b of the substrate 8. Then, the substrate 8 is moved in the horizontal direction together with the stage 10 so that the exposure laser beam 1e that has passed through the opening 6c directly draws the pattern of the pixel portion. Specifically, by repeating the movement of the substrate 8 by the length of the substrate 8 in the longitudinal direction of the linear laser beam 1c and by one pixel in the short direction of the linear laser beam 1c, the pixel portion is changed. Draw. Thereby, the pattern of the pixel portion having a pixel pitch of 300 μm can be exposed on the photoresist film 8 b of the substrate 8.

  After or before the above exposure, portions that are not repetitive patterns (for example, portions other than the pixels) are exposed by a conventional exposure apparatus in which a photomask is prepared in advance.

  Next, a resist pattern is formed on the substrate 8 by developing the photoresist film after the exposure.

  According to the first embodiment, a combination of the linear laser beam 1c and the repetitive opening pattern of the direct writing mask 6 has a plurality of exposure laser beams 1e that have passed through the opening 6c of the direct writing mask. A repeating pattern of pixels can be formed by one direct drawing. As a result, direct drawing can be performed at high speed, and the manufacturing time can be shortened by eliminating the tact, which is the biggest problem of direct drawing, and as a result, cost reduction can be realized.

  Further, since the exposure apparatus according to the present embodiment is direct drawing, and the direct drawing mask 6 is versatile and can form different patterns using the same direct drawing mask 6, the direct drawing mask 6 should be prepared. For example, it is not necessary to prepare a new mask when changing the design of the exposure object. Accordingly, a period for producing a new mask is not required, a new product development period can be shortened, and cost can be reduced. In the present embodiment, if the difference in variation in the size of the opening and the interval between the openings is within 5%, it can be used as a direct writing mask.

FIG. 6 is a top view showing a partial pattern of a light-emitting device, which is an example of a pattern that can be exposed using the exposure apparatus.
A first electrode of the first transistor 1001 is connected to the source signal line 1004, and a second electrode is connected to the gate electrode of the second transistor 1002. In addition, the first electrode of the second transistor is connected to the current supply line 1005, and the second electrode is connected to the electrode 1006 of the light emitting element. Part of the gate signal line 1003 functions as a gate electrode of the first transistor 1001.

  Each of the gate signal line 1003, the source signal line 1004, the current supply line 1005, and the electrode 1006 of the light emitting element is a repeating pattern in which patterns having the same shape are arranged at the same interval. Therefore, such a repetitive pattern can be exposed by direct drawing at high speed without using a photomask if the exposure apparatus of FIG. 1 is used. Therefore, a period for manufacturing a new mask is not required, and cost reduction can be realized.

(Embodiment 2)
A method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described with reference to FIGS.

  First, as shown in FIG. 7A, a semiconductor film 40 is formed with a thickness of 10 nm to 200 nm over a substrate 31. As the substrate 31, a glass substrate, a quartz substrate, a substrate formed of an insulating material such as alumina, a plastic substrate having heat resistance that can withstand a processing temperature in a later process, a silicon wafer, a metal plate, or the like can be used. In this case, diffusion of impurities and the like from the substrate side such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y) is prevented. Therefore, the insulating film 32 may be formed with a thickness of 10 nm to 200 nm. A substrate in which an insulating film such as silicon oxide or silicon nitride is formed on the surface of a metal such as stainless steel or a semiconductor substrate can also be used.

The insulating film 32 may be formed by treating the surface of the substrate 31 with high density plasma. The high-density plasma is generated by using a microwave of 2.45 GHz, for example, having an electron density of 1 × 10 ¹¹ to 1 × 10 ¹³ / cm ³ , an electron temperature of 2 eV or less, and an ion energy of 5 eV or less. To do. Such high-density plasma has low kinetic energy of active species, and is less damaged by plasma than conventional plasma treatment, and can form a film with few defects. The distance from the antenna generating the microwave to the substrate 31 is 20 to 80 mm, preferably 20 to 60 mm.

  The surface of the substrate 31 is formed by performing the high-density plasma treatment in a nitrogen atmosphere, for example, an atmosphere containing nitrogen and a rare gas, an atmosphere containing nitrogen, hydrogen, and a rare gas, or an atmosphere containing ammonia and a rare gas. It can be nitrided. When a glass substrate, a quartz substrate, a silicon wafer, or the like is used as the substrate 31, when the nitriding process is performed with the high-density plasma, the nitride film formed on the surface of the substrate 31 has a silicon nitride film as a main component. The film 32 can be used. A silicon oxide film or a silicon oxynitride film may be formed on the nitride film by a plasma CVD method to form an insulating film 32 composed of a plurality of layers.

  Similarly, by performing nitriding treatment with high-density plasma on the surface of the insulating film 32 made of a silicon oxide film, a silicon oxynitride film, or the like, a nitride film can be formed on the surface. The nitride film can suppress the diffusion of impurities from the substrate 31 and can be formed very thin, so that the influence of stress on the semiconductor layer formed thereon can be reduced.

  When a plastic substrate is used as the substrate 31, it is preferable to use a substrate having a relatively high glass transition point such as PC (polycarbonate), PES (polyethersulfone), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate). .

  For the semiconductor film 40, silicon, silicon-germanium, silicon-germanium-carbon, or the like is used. As a forming method, a known CVD method, sputtering method, coating method, vapor deposition method or the like can be used. The semiconductor film 40 may be an amorphous semiconductor film, a crystalline semiconductor film, or a single crystal semiconductor.

  In the case of using a crystalline semiconductor film, examples of a method for forming the crystalline semiconductor film include a method of directly forming a crystalline semiconductor film on the substrate 31 and a method of crystallizing after forming an amorphous semiconductor film on the substrate 31.

  As a method for crystallizing an amorphous semiconductor film, a method of irradiating with laser light 41 (FIG. 8A), a method of crystallizing by heating using an element that promotes crystallization of a semiconductor film, a semiconductor A method of irradiating with laser light after heating and crystallizing with an element that promotes crystallization of the film can be used (FIGS. 8B and 8C). Needless to say, a method of thermally crystallizing an amorphous semiconductor film without using the element can also be used. However, the substrate is limited to a substrate that can withstand high temperatures such as a quartz substrate and a silicon wafer.

In the case of using laser irradiation, a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. Laser beams that can be used here are gas lasers such as Ar laser, Kr laser, and excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO _3, GdVO ₄ , or polycrystalline ( (Ceramics) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants Lasers oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. Energy density of the laser is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec.

Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as a medium, a laser, Ar ion laser, or Ti: sapphire laser with one or more added as a medium should be continuously oscillated It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When a laser beam is oscillated at an oscillation frequency of 10 MHz or higher, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

  When ceramic (polycrystal) is used as the medium, it is possible to form the medium in a free shape in a short time and at low cost. When a single crystal is used, a cylindrical medium having a diameter of several millimeters and a length of several tens of millimeters is usually used. However, when ceramic is used, a larger one can be made.

  Since the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission cannot be changed greatly regardless of whether it is single crystal or polycrystal, there is a certain limit to the improvement in laser output by increasing the concentration. However, in the case of ceramic, since the size of the medium can be remarkably increased as compared with the single crystal, the output can be greatly improved.

  Further, in the case of ceramic, a medium having a parallelepiped shape or a rectangular parallelepiped shape can be easily formed. When a medium having such a shape is used to cause oscillation light to travel in a zigzag manner inside the medium, the oscillation optical path can be made longer. As a result, amplification is increased and oscillation can be performed with high output. In addition, since the laser beam emitted from the medium having such a shape has a quadrangular cross-sectional shape at the time of emission, it is advantageous for shaping into a linear beam as compared with a round beam. By shaping the emitted laser beam using an optical system, a linear beam having a short length of 1 mm or less and a long length of several mm to several m can be easily obtained. . Further, by irradiating the medium with the excitation light uniformly, the linear beam has a uniform energy distribution in the longitudinal direction.

  By irradiating the semiconductor film with this linear beam, the entire surface of the semiconductor film can be annealed more uniformly. When uniform annealing is required up to both ends of the linear beam, it is necessary to arrange a slit at both ends to shield the energy attenuating portion.

  When a semiconductor film is annealed using a linear beam having a uniform intensity obtained in this manner and an electronic device is manufactured using this semiconductor film, the characteristics of the electronic device are good and uniform.

  A technique described in Japanese Patent Application Laid-Open No. 8-78329 can be used as a crystallization method by heating using an element that promotes crystallization of a semiconductor film. The technology described in this publication adds a metal element that promotes crystallization to an amorphous semiconductor film (also referred to as an amorphous silicon film), and heat-treats the amorphous semiconductor film starting from the added region. Crystallization is performed (FIG. 8B).

  Alternatively, the amorphous semiconductor film can be crystallized by irradiation with strong light instead of heat treatment. In this case, any one of infrared light, visible light, and ultraviolet light or a combination thereof can be used. Typically, a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure Light emitted from a sodium lamp or a high-pressure mercury lamp is used. The lamp light source is turned on for 1 to 60 seconds, preferably 30 to 60 seconds, and this is repeated 1 to 10 times, preferably 2 to 6 times. The emission intensity of the lamp light source is arbitrary, but the semiconductor film is instantaneously heated to about 600 to 1000 ° C. Note that heat treatment for releasing hydrogen contained in the amorphous semiconductor film 40 having an amorphous structure may be performed before irradiation with strong light, if necessary. Further, crystallization may be performed by performing both heat treatment and irradiation with strong light.

In order to increase the crystallization rate of the crystalline semiconductor film (the ratio of the crystal component in the entire volume of the film) after the heat treatment and repair defects remaining in the crystal grains, the laser light 41 is applied to the atmosphere to the crystalline semiconductor film. Alternatively, irradiation may be performed in an oxygen atmosphere (FIG. 8C). As the laser light, those described above can be used.
Further, since it is necessary to remove the metal element contained in the crystalline semiconductor film, a method will be described below.
First, by treating the surface of the crystalline semiconductor film with an ozone-containing aqueous solution (typically ozone water), a barrier layer 43 made of an oxide film (called chemical oxide) is formed on the surface of the crystalline semiconductor film with a thickness of 1 nm to 10 nm. It is formed with a thickness (FIG. 8D). The barrier layer 43 functions as an etching stopper when only the gettering layer is selectively removed in a later step.

  Next, a gettering layer containing a rare gas element is formed on the barrier layer 43 as a gettering site. Here, a semiconductor film containing a rare gas element is formed as the gettering layer 44 by a CVD method or a sputtering method (FIG. 8D). When forming the gettering layer, the sputtering conditions are adjusted as appropriate so that a rare gas element is added. As the rare gas element, one or more selected from helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) are used.

Note that when a source gas containing phosphorus, which is an impurity element of one conductivity type, is used, or when a gettering layer is formed using a target containing phosphorus, in addition to gettering with a rare gas element, the Coulomb force of phosphorus is used. Gettering can be performed.
Further, since metal element (for example, nickel) tends to move to a region having a high oxygen concentration during gettering, the oxygen concentration contained in the gettering layer 44 is, for example, 5 × 10 ¹⁸ cm ⁻³ or more. It is desirable.

  Next, the crystalline semiconductor film, the barrier layer, and the gettering layer are subjected to heat treatment (for example, heat treatment or intense light irradiation), and gettering of a metal element (for example, nickel) is performed as indicated by an arrow in FIG. The concentration of the metal element in the crystalline semiconductor film is reduced or removed.

  Next, a known etching method is performed using the barrier layer 43 as an etching stopper, and only the gettering layer 44 is selectively removed. Thereafter, the barrier layer 43 made of an oxide film is removed by using, for example, an etchant containing hydrofluoric acid (FIG. 7A).

  The impurity ions may be doped in consideration of threshold characteristics of the TFT manufactured here.

  Next, the semiconductor film is formed into island-shaped semiconductor films 33 and 34 by a photolithography process (FIG. 7B). Here, a P-channel TFT is formed on the semiconductor film 33 and an n-channel TFT is formed on the semiconductor film 34. The island-shaped semiconductor films 33 and 34 are repetitive patterns in which patterns having the same shape are arranged at the same intervals. Therefore, such a repetitive pattern can be exposed by direct drawing at high speed without using a photomask if the exposure apparatus of FIG. 1 is used in the photolithography process. Therefore, a period for manufacturing a new mask is not required, and cost reduction can be realized.

Next, after cleaning the surface of the semiconductor film with a hydrofluoric acid-containing etchant or the like, a gate insulating film 35 is formed with a thickness of 10 nm to 200 nm on the semiconductor film (FIG. 7C). The surface cleaning process and the formation process of the gate insulating film 35 may be performed continuously without being exposed to the atmosphere.
The gate insulating film 35 is formed of an insulating film containing silicon as a main component, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, or the like. Further, it may be a single layer or a laminated film.

  Next, after cleaning the surface of the gate insulating film 35, a conductive film 36 for forming a gate electrode is formed to a thickness of 100 nm to 500 nm over the entire surface including the gate insulating film 35 (FIG. 7C). The conductive film 36 includes an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al), or an alloy material or a compound material containing the element as a main component. be able to. A semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus (P) may be used. The conductive film 36 may be a single layer or a laminate of two or more layers.

  A photoresist film is applied on the conductive film 36, and the photoresist film is exposed and developed to form a first resist mask 37a and a second resist mask 37b with a thickness of 1.0 to 1.5 μm. . By etching the conductive film 36 using the resist masks 37a and 37b, gate electrodes 38a and 38b are formed on the gate insulating film 35 (FIG. 7D). Note that as the resist mask in this embodiment, a resist material made of a novolak resin which is a positive resist and a naphthoquinonediazide compound can be used. The gate electrodes 38a and 38b are repetitive patterns in which patterns having the same shape are arranged at the same intervals. Therefore, such a repetitive pattern can be exposed by direct drawing at high speed without using a photomask if the exposure apparatus of FIG. 1 is used. Therefore, a period for manufacturing a new mask is not required, and cost reduction can be realized.

  Further, a wiring such as a gate wiring can be formed using the same material as the gate electrodes 38a and 38b. Here, the gate electrode and the wiring are preferably routed so that the corners are rounded when viewed from the direction perpendicular to the substrate 31. By rounding the corners, dust and the like can be prevented from remaining at the corners of the wiring, and defects caused by the dust can be suppressed and the yield can be improved.

  Subsequently, after the first resist mask 37a and the second resist mask 37b are removed by an ashing method or the like, a photoresist film is applied, and the photoresist film is exposed and imaged, whereby the semiconductor film 34, the gate electrode A third resist mask 39 is formed to a thickness of 1.0 to 1.5 μm so as to cover the second resist mask 37b (FIG. 9A).

Using the third resist mask 39 and the gate electrodes 38a and 38b as masks, p-type impurity ions 30 (B ions) are introduced into the semiconductor film 33 to form the source region 11 and the drain region 12. B ions are accelerated at 50 to 100 kV, and the concentration of B ions is set to 1.0 × 10 ¹⁹ cm ^{−3 to} 1.0 × 10 ²¹ cm ⁻³ .

  Next, the third resist mask 39 is removed by a technique such as ashing (FIG. 9B).

  Next, a photoresist film is applied, and this photoresist film is exposed and developed to form the fourth resist mask 13 with a thickness of 1.0 to 1.5 μm so as to cover the semiconductor film 33 and the gate electrode 38a. FIG. 9C).

Using the fourth resist mask 13 and the gate electrodes 38a and 38b as masks, n-type impurity ions 14 (phosphorus ions, arsenic ions, etc.) are introduced into the semiconductor film 34 to form the source region 15 and the drain region 16 (FIG. 9). (C)). The n-type impurity ions are accelerated at 30 to 80 kV, and the concentration of the n-type impurity ions is set to 1.0 × 10 ¹⁹ cm ^{−3 to} 1.0 × 10 ²¹ cm ⁻³ .

  Here, in order to activate the source region and the drain region, heat treatment, light irradiation with laser light or strong light, RTA treatment, or the like may be performed.

As a result, the semiconductor film 33 becomes a P-channel TFT, and the semiconductor film 34 becomes an n-channel TFT.
In this case, the p-type impurity ions are added first and then the n-type impurity ions are added. In this case, the acceleration voltage or acceleration energy of the p-type impurity ions is preferably smaller than the acceleration voltage or acceleration energy of the n-type impurity ions. As the acceleration voltage, those described above can be used.

  The dose of p-type impurity ions is preferably smaller than the dose of n-type impurity ions.

  Next, the interlayer insulating film 17 is formed on the entire surface including the gate insulating film 35 and the gate electrodes 38a and 38b, and hydrogenation is performed. As the interlayer insulating film 17, a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film can be used.

  Next, a resist mask is formed on the interlayer insulating film 17, and the interlayer insulating film 17 is etched using this resist mask, so that contact holes located on the source regions 11 and 15 and the drain regions 12 and 16 are formed. Form.

  After the resist mask is removed and a conductive film is formed, etching is performed using another resist mask to form electrodes or wirings 18 (TFT source wiring and drain wiring, current supply wiring, etc.) (FIG. 9). (D)). However, although the electrode and the wiring are integrally formed in this embodiment mode, the electrode and the wiring may be separately formed and electrically connected. As the conductive film, a laminated film of TiN, Al and TiN, or an Al alloy film can be used.

Here, it is preferable that the electrodes and wiring are routed so that the corners are rounded when viewed from a direction perpendicular to the substrate 31. By rounding the corners, dust and the like can be prevented from remaining at the corners of the wiring, and defects caused by the dust can be suppressed and the yield can be improved.
For patterning, a mask prepared by exposing and developing a photosensitive resist is used.
The electrode or wiring 18 is a repeated pattern in which patterns having the same shape are arranged at the same interval. Therefore, such a repetitive pattern can be exposed by direct drawing at high speed without using a photomask if the exposure apparatus of FIG. 1 is used. Therefore, a period for manufacturing a new mask is not required, and cost reduction can be realized.

  A planarizing film to be the second interlayer insulating film 19 is formed. As the planarizing film, a light-transmitting inorganic material (silicon oxide, silicon nitride, silicon nitride containing oxygen, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzo Cyclobutene) or a laminate of these. Other light-transmitting films used for the planarizing film include insulating films made of SiOx films containing alkyl groups obtained by a coating method, such as silica glass, alkylsiloxane polymers, alkylsilsesquioxane polymers, hydrogen An insulating film formed using a silsesquioxane hydride polymer, a hydrogenated alkyl silsesquioxane polymer, or the like can be used. Examples of the siloxane polymer include PSB-K1 and PSB-K31, which are Toray-made coating insulating film materials, and ZRS-5PH, which is a catalytic chemical coating insulating film material. The second interlayer insulating film may be a single layer film or a multilayer film.

  A contact hole is formed in the second interlayer insulating film 19 using a new resist mask. This contact hole is a repeated pattern in which patterns having the same shape are arranged at the same interval. Therefore, such a repetitive pattern can be exposed by direct drawing at high speed without using a photomask if the exposure apparatus of FIG. 1 is used.

Next, the conductive film 20 is formed. As the conductive film, in addition to indium tin oxide (ITO) as a transparent conductive film, for example, indium tin oxide containing Si element or indium oxide mixed with 2-20 [wt%] zinc oxide (ZnO) (IZO ( Indium Zinc Oxide) or the like can be used.
After that, the transparent conductive film is patterned using a new resist mask to form a transparent electrode (FIG. 9D). However, if not used as a display device, it is not necessary to use a transparent conductive film. The transparent electrode is a repeated pattern in which patterns having the same shape are arranged at the same interval. Therefore, such a repetitive pattern can be exposed by direct drawing at high speed without using a photomask if the exposure apparatus of FIG. 1 is used.

(Embodiment 3)
Here, a method for manufacturing a semiconductor device capable of exchanging data without contact using the present invention, such as an IC tag or an IC chip, will be described with reference to FIGS. In addition, the same thing as the said embodiment is represented with the same code | symbol.
First, the peeling layer 100 is formed on one surface of the substrate 31 (FIG. 10A). As the substrate 31, a glass substrate, a quartz substrate, a metal substrate or a stainless substrate having an insulating film formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like is used. If such a substrate 31 is used, the size and shape of the substrate 31 are not greatly limited. For example, if the substrate 31 has a side of 1 meter or more and has a rectangular shape, the productivity is remarkably improved. be able to. Such an advantage is a great advantage as compared with a case where a wireless chip is taken out from a circular silicon substrate. Further, the thin film integrated circuit formed over the substrate 31 is peeled off from the substrate 31 later. That is, the wireless chip provided in the present invention does not have the substrate 31. Therefore, the substrate 31 from which the thin film integrated circuit has been peeled can be reused any number of times. Thus, if the substrate 31 is reused, the cost can be reduced. As the substrate 31 to be reused, a quartz substrate is desirable.

  In the present embodiment, the release layer 100 is formed by selectively forming a release layer by forming a thin film on one surface of the substrate 31 and then patterning it by a photolithography method.

  The peeling layer 100 is formed by a known means (sputtering method, plasma CVD method, etc.) tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt An element selected from (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), lead (Pb), osmium (Os), iridium (Ir), silicon (Si) A layer formed of an alloy material or a compound material containing an element as a main component is formed as a single layer or a stacked layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

  In the case where the separation layer 100 has a single-layer structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is preferably formed. Alternatively, a layer containing tungsten oxide or oxynitride, a layer containing molybdenum oxide or oxynitride, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. The oxide of tungsten may be expressed as tungsten oxide.

  In the case where the separation layer 100 has a stacked structure, preferably, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed as a first layer, and tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed as a second layer. An oxide, nitride, oxynitride, or nitride oxide is formed.

  Note that as the separation layer 100, a layered structure of a layer containing tungsten oxide is formed over a layer containing tungsten, a layer containing tungsten is formed, and a layer containing silicon oxide is formed thereon, The fact that a layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the silicon oxide layer may be utilized. The same applies to the case where a layer containing tungsten nitride, oxynitride, and nitride oxide is formed. For example, after forming a layer containing tungsten, a silicon nitride layer, a silicon oxynitride layer, a nitrided oxide layer is formed thereon. A silicon layer is formed. Note that after the layer containing tungsten is formed, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride oxide layer, or the like formed over the layer functions as an insulating film to be a base later.

Moreover, the oxide of tungsten is represented by WOx, and x is 2 to 3. When x is 2 (WO ₂ ), when x is 2.5 (W ₂ O ₅ ), when x is 2.75 (W ₄ O ₁₁ ), when x is 3 (WO ₃ ), etc. . In forming the tungsten oxide, the above-mentioned value of x is not particularly limited, and may be determined based on the etching rate. However, the layer having the best etching rate is a layer containing tungsten oxide (WOx, 0 <x <3) formed by a sputtering method in an oxygen atmosphere. Therefore, in order to shorten the manufacturing time, a layer containing a tungsten oxide is preferably formed as the separation layer by a sputtering method in an oxygen atmosphere.

  Note that, according to the above process, the release layer 100 is formed so as to be in contact with the substrate 31, but the present invention is not limited to this process. An insulating film serving as a base may be formed so as to be in contact with the substrate 31, and the peeling layer 100 may be formed so as to be in contact with the insulating film.

  Next, an insulating film 32 serving as a base is formed so as to cover the peeling layer 100. As the base insulating film, a layer containing a silicon oxide or a silicon nitride is formed as a single layer or a stacked layer by a known means (a sputtering method, a plasma CVD method, or the like). The silicon oxide material is a substance containing silicon (Si) and oxygen (O), and corresponds to silicon oxide, silicon oxynitride, silicon nitride oxide, or the like. The silicon nitride material is a substance containing silicon and nitrogen (N), and corresponds to silicon nitride, silicon oxynitride, silicon nitride oxide, or the like.

Next, after an amorphous silicon film is formed on the insulating film 32, a p-channel TFT and an n-channel TFT are manufactured. Since the method described in the above embodiment mode can be used for manufacturing the TFT, description thereof is omitted here. Note that when the TFT is manufactured, direct writing can be performed at high speed by using the exposure apparatus shown in FIG. Therefore, the cost for manufacturing a new mask and the period for manufacturing the mask are not required, so that cost reduction can be realized.
FIG. 10B shows a structure manufactured up to the TFT. Compared with FIG. 9D, a difference is that a peeling layer and a substrate are provided below the insulating film.

  The conductive film 20 formed in the above embodiment functions as an antenna. Unlike the above-described embodiment, the conductive film 20 includes an element selected from aluminum (Al), titanium (Ti), silver (Ag), and copper (Cu), or an alloy material or compound material containing these elements as a main component. Thus, a single layer or a stacked layer is formed. For example, a stacked structure in which an aluminum layer is formed over the barrier layer, a stacked structure having an aluminum layer between the barrier layer and the barrier layer, or the like may be employed. The barrier layer corresponds to titanium, titanium nitride, molybdenum, molybdenum nitride, or the like.

  Next, although not shown here, a protective layer may be formed by a known means so as to cover the thin film integrated circuit 101. The protective layer corresponds to a layer containing carbon such as DLC (Diamond Like Carbon), a layer containing silicon nitride, a layer containing silicon nitride oxide, or the like.

  Next, the insulating films 32, 35, 17, and 19 are etched by photolithography so that the peeling layer 100 is exposed, so that the openings 102 and 103 are formed (FIG. 11A).

  Next, an insulating film 104 is formed by a known means (SOG method, droplet discharge method, or the like) so as to cover the thin film integrated circuit 101 (FIG. 11B). The insulating film 104 is formed using an organic material, preferably an epoxy resin. The insulating film 104 is formed so that the thin film integrated circuit 101 is not scattered. In other words, since the thin film integrated circuit 101 is small and thin, after the peeling layer is removed, the thin film integrated circuit 101 is not in close contact with the substrate and thus easily scatters. However, by forming the insulating film 104 around the thin film integrated circuit 101, the thin film integrated circuit 101 is weighted and scattering from the substrate 31 can be prevented. Further, although the thin film integrated circuit 101 is thin and light, the insulating film 104 is formed, so that a certain degree of strength can be ensured without forming a wound shape. In the structure shown in the figure, the insulating film 104 is formed on the upper surface and side surfaces of the thin film integrated circuit 101. However, the present invention is not limited to this structure, and the insulating film 104 is formed only on the upper surface of the thin film integrated circuit 101. May be. Further, according to the above description, the step of forming the insulating film 104 is performed after the step of forming the openings 102 and 103, but the present invention is not limited to this order. After the step of forming the insulating film 104 over the interlayer insulating film 19, a step of forming an opening by etching a plurality of insulating films may be performed. In this case, the insulating film 104 is formed only on the upper surface of the thin film integrated circuit 101.

Next, an etchant is introduced into the openings 102 and 103 to remove the peeling layer 100 (FIG. 12A). As the etchant, a gas or liquid containing halogen fluoride or a halogenated compound is used. For example, chlorine trifluoride (ClF ₃ ) is used as a gas containing halogen fluoride. Then, the thin film integrated circuit 101 is peeled from the substrate 31.

  Next, one surface of the thin film integrated circuit 101 is bonded to the first base 105 and completely peeled from the substrate 31 (FIG. 12B).

  Subsequently, the other surface of the thin film integrated circuit 101 is adhered to the second base 106 and then laminated and bonded, and the thin film integrated circuit 101 is sealed by the first base 105 and the second base 106. (FIG. 13). Then, an IC tag in which the thin film integrated circuit 101 is sealed with the first base 105 and the second base 106 is completed.

  The first substrate 105 and the second substrate 106 are a laminated film (made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.), a paper made of a fibrous material, a base film (polyester, polyamide, inorganic). Corresponding to a laminated film of an adhesive synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.) and the like. The laminated film is laminated and laminated with the object to be processed, and when laminated and laminated, the laminated film is provided on the outermost layer of the laminated film or on the outermost layer. The layer (not the adhesive layer) is melted by heat treatment and bonded by pressure.

  An adhesive layer may be provided on the surfaces of the first base 105 and the second base 106, or the adhesive layer may not be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, an epoxy resin adhesive, or a resin additive.

  Next, application examples of a semiconductor device capable of exchanging data without contact will be described below with reference to the drawings. Note that a semiconductor device capable of exchanging data in a non-contact manner has an RFID tag (Radio Frequency Identification), an ID tag, an IC tag, an IC chip, an RF tag (Radio Frequency), a wireless tag, and an electronic tag depending on the form of use. Also called a wireless chip.

  The RFID tag 80 has a function of communicating data without contact, and includes a power supply circuit 81, a clock generation circuit 82, a data demodulation circuit 83, a data modulation circuit 84, a control circuit 85 that controls other circuits, a storage circuit 86, and An antenna 87 is provided (FIG. 14A). Note that the number of memory circuits is not limited to one, and a plurality of memory circuits may be used. An SRAM, a flash memory, a ROM, an FeRAM, or the like or an organic compound layer described in the above embodiment is used for a memory element portion. Can do.

  A signal transmitted as a radio wave from the reader / writer 88 is converted into an AC electrical signal by electromagnetic induction in the antenna 87. In the power supply circuit 81, a power supply voltage is generated using an AC electrical signal, and the power supply voltage is supplied to each circuit using a power supply wiring. The clock generation circuit 82 generates various clock signals based on the AC signal input from the antenna 87 and supplies the generated clock signal to the control circuit 85. The demodulation circuit 83 demodulates the AC electric signal and supplies it to the control circuit 85. The control circuit 85 performs various arithmetic processes according to the input signal. The storage circuit 86 stores programs and data used in the control circuit 85, and can also be used as a work area during arithmetic processing. Then, data is sent from the control circuit 85 to the modulation circuit 84, and load modulation can be applied to the antenna 87 from the modulation circuit 84 in accordance with the data. The reader / writer 88 can read the data as a result by receiving the load modulation applied to the antenna 87 by radio waves.

  The RFID tag may be of a type in which power supply voltage is supplied to each circuit by radio waves without mounting a power source (battery), or each circuit is provided with a power source (battery) and a power supply (battery). The power supply voltage may be supplied to the type.

  By using the structure described in any of the above embodiments, an RFID tag that can be bent can be manufactured; thus, it can be attached to an object having a curved surface.

  Next, an example of how the RFID tag having flexibility is used will be described. A reader / writer 320 is provided on the side surface of the portable terminal including the display portion 321, and an RFID tag 323 is provided on the side surface of the article 322 (FIG. 14B). When the reader / writer 320 is held over the RFID tag 323 included in the product 322, information about the product, such as the description of the product, such as the raw material and the source of the product, the inspection result for each production process, the history of the distribution process, and the like are displayed on the display unit 321. Is displayed. In addition, when the product 326 is conveyed by a belt conveyor, the product 326 can be inspected using the reader / writer 324 and the RFID tag 325 provided on the product 326 (FIG. 14C). In this manner, by using the RFID tag in the system, information can be easily acquired, and high functionality and high added value are realized. In addition, as described in the above embodiment, even when pasted on an object having a curved surface, a transistor or the like included in the RFID tag can be prevented from being damaged, and a highly reliable RFID tag can be provided. It becomes possible.

  In addition to the above, flexible RFID tags have a wide range of uses, and any product that can be used for production, management, etc. without contact and clarifying information such as the history of objects. Can be applied. For example, banknotes, coins, securities, certificate documents, bearer claims, packaging containers, books, recording media, personal belongings, vehicles, foods, clothing, insurance supplies, daily necessities, chemicals, etc. It can be provided and used in an electronic device or the like. These examples will be described with reference to FIG.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, etc. (see FIG. 15A). The certificate refers to a driver's license, a resident's card, etc. (see FIG. 15B). Bearer bonds refer to stamps, gift tickets, various gift certificates, and the like (see FIG. 15C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (see FIG. 15D). Books refer to books, books, and the like (see FIG. 15E). The recording media refer to DVD software, video tapes, and the like (see FIG. 15F). The vehicles refer to vehicles such as bicycles, ships, and the like (see FIG. 15G). Personal belongings refer to bags, glasses, and the like (see FIG. 15H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (television receivers, thin television receivers), cellular phones, and the like.

  As described above, in this embodiment, a semiconductor device such as an IC tag or an RFID tag can be manufactured using a TFT using the present invention. As a result, manufacturing time and manufacturing costs can be reduced, and cost reduction can be realized.

  In this way, by providing RFID tags on packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. it can. In addition, forgery and theft can be prevented by providing an RFID tag in vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by embedding an RFID tag equipped with a sensor in a living creature such as livestock, it is possible to easily manage the current health condition such as body temperature as well as the year of birth, gender or type.

  Note that this embodiment can be freely combined with the above embodiment. That is, any combination of the structure described in this embodiment and the structure described in the above embodiment is included in the present invention.

(Embodiment 4)
An example of manufacturing a liquid crystal display (LCD) using the present invention will be described.

  The manufacturing method of the display device described here is a method of simultaneously manufacturing a pixel portion including a pixel TFT and a TFT of a driver circuit portion provided in the periphery thereof. However, in order to simplify the explanation, a CMOS circuit which is a basic unit with respect to the drive circuit is illustrated.

  First, the process up to the formation of the TFT in FIG. 16 is performed based on the above embodiment. In addition, the same thing as the said embodiment is represented with the same code | symbol. Note that in this embodiment mode, the transistor 552 which is a pixel TFT is a multi-gate TFT.

  After the interlayer insulating film 17 in FIG. 9D is formed, a planarizing film that becomes the second interlayer insulating film 19 is formed. As the planarizing film, those described in the above embodiments can be used.

  Next, contact holes are formed in the second interlayer insulating film 19 and the interlayer insulating film 17 using a resist mask.

  Next, a resist mask is formed on the second interlayer insulating film 19, and the second interlayer insulating film 19 and the interlayer insulating film 17 are etched using the resist mask, so that the source and drain regions are respectively formed. A contact hole is formed.

  After the resist mask is removed and a conductive film is formed, etching is performed using another resist mask to form electrodes or wirings 540 to 544 (such as TFT source wiring and drain wiring). As the conductive film, a laminated film of TiN, Al and TiN, an Al alloy film, or the like can be used.

Here, the electrodes and wiring are preferably routed so that the corners are rounded when viewed from the direction perpendicular to the substrate. By rounding the corners, dust and the like can be prevented from remaining at the corners of the wiring, and defects caused by the dust can be suppressed and the yield can be improved.
For patterning, a mask prepared by exposing and developing a photosensitive resist is used.
Note that the electrodes or wirings 540 to 544 are repetitive patterns in which patterns having the same shape are arranged at the same intervals. Therefore, such a repetitive pattern can be exposed by direct drawing at high speed without using a photomask if the exposure apparatus of FIG. 1 is used.

  Next, a third interlayer insulating film 610 is formed on the second interlayer insulating film 19 and the electrodes or wirings 540 to 544. The third interlayer insulating film 610 can be formed using the same material as the second interlayer insulating film 19.

Next, a resist mask is formed using the direct drawing mask and the direct drawing exposure apparatus in FIG. 1, and a part of the third interlayer insulating film 610 is removed by dry etching to form an opening (form a contact hole). In this contact hole formation, carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ), and helium (He) are used as an etching gas. Note that the bottom of the contact hole reaches the electrode or wiring 544.

  After removing the resist mask, a second conductive film is formed over the entire surface. Next, patterning of the second conductive film is performed using a photomask, so that the pixel electrode 623 electrically connected to the electrode or the wiring 544 is formed (FIG. 16). In the case of manufacturing a reflective liquid crystal display panel, a metal having light reflectivity such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc. is formed by sputtering the pixel electrode 623. What is necessary is just to form using a material.

When a transmissive liquid crystal display panel is manufactured, a transparent conductive film such as indium tin oxide (ITO), indium tin oxide containing silicon oxide, zinc oxide (ZnO), or tin oxide (SnO ₂ ) is used. A pixel electrode 623 is formed.

  FIG. 17 is an enlarged top view of a part of the pixel portion including the pixel TFT. FIG. 16 shows a state in which the pixel electrode is being formed, and shows a state in which the pixel electrode is formed in the right pixel, but the pixel electrode is not formed in the left pixel. In FIG. 17, a diagram cut along a solid line AA ′ corresponds to the cross section of the pixel portion in FIG. 16, and the same reference numerals are used for portions corresponding to FIG. 16.

  A pixel is provided at an intersection of a source signal line 543 and a gate signal line 4802 and includes a transistor 552, a capacitor 4804, and a liquid crystal element. In the figure, only one electrode (pixel electrode 623) of the pair of electrodes for driving the liquid crystal of the liquid crystal element is shown.

  The transistor 552 includes a semiconductor layer 4806, a first insulating film, and a part of the gate signal line 4802 which overlaps with the semiconductor layer 4806 with the first insulating film interposed therebetween. The semiconductor layer 4806 becomes an active layer of the transistor 552. The first insulating film functions as a gate insulating film of the transistor. One of a source and a drain of the transistor 552 is connected to the source signal line 543 through a contact hole 4807, and the other is connected to the connection wiring 544 through a contact hole 4808. The connection wiring 544 is connected to the pixel electrode 623 through a contact hole 4810. The connection wiring 544 can be formed by using the same conductive layer as the source signal line 543 and simultaneously patterning the connection wiring 544.

  The capacitor 4804 has a structure in which the semiconductor layer 4806 and the capacitor wiring 4811 which overlaps with the semiconductor layer 4806 with the first insulating film interposed therebetween are used as a pair of electrodes, and the first insulating film is used as a dielectric layer (first element). (Referred to as a capacitive element). Further, the capacitor 4804 has a structure in which the capacitor wiring 4811 and the pixel electrode 623 that overlaps the capacitor wiring 4811 with the second insulating film interposed therebetween are used as a pair of electrodes, and the second insulating film is used as a dielectric layer. A structure including (referred to as a second capacitor) may be employed. Since the second capacitor element is connected in parallel with the first capacitor element, the capacitance value of the capacitor element 4804 can be increased by providing the second capacitor element. Further, the capacitor wiring 4811 can be formed by using the same conductive layer as the gate signal line 4802 and patterning at the same time.

  The pattern of the semiconductor layer 4806, the gate signal line 4802, the capacitor wiring 4811, the source signal line 543, the connection wiring 544, and the pixel electrode 623 has a shape in which a corner is chamfered with a length of 10 μm or less on one side. A mask pattern is produced using the direct drawing mask and the direct drawing exposure apparatus shown in FIG. 1, and patterning is performed using the mask pattern, whereby a corner portion can be chamfered. The corners may be further rounded. That is, the pattern shape may be made smoother than the mask pattern by appropriately determining the exposure conditions and the etching conditions.

  In the wiring and the electrode, the following effects can be obtained by making the corners of the bent portion and the portion where the wiring width changes smooth and round. By chamfering the convex portion, generation of fine powder due to abnormal discharge can be suppressed when dry etching using plasma is performed. Further, by chamfering the recess, even if it is fine powder, the fine powder can be prevented from collecting at the corners during washing, and the fine powder can be washed away. Thus, the problem of dust and fine powder in the manufacturing process can be solved and the yield can be improved.

  Through the above steps, a TFT substrate of a liquid crystal display device in which a transistor 552 which is a top gate type pixel TFT, a CMOS circuit 553 including the top gate type TFTs 550 and 551 and a pixel electrode 623 are formed on the substrate is completed.

  Next, an alignment film 624 a is formed so as to cover the pixel electrode 623. Note that the alignment film 624a may be formed by a droplet discharge method, a screen printing method, or an offset printing method. Thereafter, a rubbing process is performed on the surface of the alignment film 624a.

  The counter substrate 625 is provided with a color filter composed of a colored layer 626a, a light shielding layer (black matrix) 626b, and an overcoat layer 627, a counter electrode 628 composed of a transparent electrode or a reflective electrode, and an alignment film thereon. 624b is formed (FIG. 19). Then, a sealing material 600 having a closed pattern is formed so as to surround a region overlapping with the pixel portion 650 including the both TFTs by a droplet discharge method (FIG. 18A). Here, an example in which a sealing material 600 having a closed pattern is drawn in order to drop liquid crystal is shown. However, a dip type (in which liquid crystal is injected by using a capillary phenomenon after providing a sealing pattern having an opening and bonding the substrate 500 together) A pumping type) may be used.

  Next, the liquid crystal composition 629 is dropped under reduced pressure so that bubbles do not enter (FIG. 18B), and both the substrates 500 and 625 are attached (FIG. 18C). The liquid crystal is dropped once or a plurality of times in the closed loop seal pattern. As an alignment mode of the liquid crystal composition 629, a TN mode in which the alignment of liquid crystal molecules is twisted by 90 ° from light incidence to light emission is used. And it bonds so that the rubbing direction of a board | substrate may orthogonally cross.

  Note that the distance between the pair of substrates may be maintained by scattering spherical spacers, forming columnar spacers made of resin, or including a filler in the sealant 600. The columnar spacer is an organic resin material mainly containing at least one of acrylic, polyimide, polyimide amide, and epoxy, or any one material of silicon oxide, silicon nitride, and silicon oxide containing nitrogen, or a laminate thereof. It is an inorganic material made of a film.

  Next, the substrate is divided. In case of multi-chamfering, each panel is divided. In the case of one-sided chamfering, the dividing step can be omitted by attaching a counter substrate that has been cut in advance (FIGS. 19 and 18D).

  Then, an FPC (Flexible Printed Circuit) is attached through an anisotropic conductor layer using a known technique. The liquid crystal display device is completed through the above steps. If necessary, an optical film is attached. In the case of a transmissive liquid crystal display device, the polarizing plate is attached to both the TFT substrate and the counter substrate.

  FIG. 20A shows a top view of the liquid crystal display device obtained through the above steps, and FIG. 20B shows an example of a top view of another liquid crystal display device.

  In FIG. 20A, 1 is a TFT substrate, 625 is a counter substrate, 650 is a pixel portion, 600 is a sealing material, and 801 is an FPC. Note that the liquid crystal composition is discharged by a droplet discharge method, and the pair of substrates 500 and 625 is bonded to each other with the sealant 600 under reduced pressure.

  In FIG. 20B, 1 is a TFT substrate, 625 is a counter substrate, 802 is a source signal line driver circuit, 803 is a gate signal line driver circuit, 650 is a pixel portion, 600a is a first sealant, and 801 is an FPC. . Note that the liquid crystal composition is discharged by a droplet discharge method, and the pair of substrates 500 and 625 are bonded to each other with the first sealant 600a and the second sealant 600b. Since the driving circuit portions 802 and 803 do not require a liquid crystal group, only the pixel portion 650 holds liquid crystal, and the second sealant 600b is provided to reinforce the entire panel.

  As described above, in this embodiment mode, a liquid crystal display device can be manufactured using a TFT using the present invention. As a result, it is possible to reduce manufacturing time and manufacturing cost. The liquid crystal display device manufactured in this embodiment can be used as a display portion of various electronic devices.

  Note that in this embodiment mode, the TFT is a top gate type TFT, but the present invention is not limited to this structure, and a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used as appropriate. is there. Further, the TFT is not limited to a multi-gate TFT, and may be a single gate TFT.

  Further, this embodiment mode can be freely combined with any description of the above embodiment modes as necessary.

(Embodiment 5)
A method for forming a light emitting device according to Embodiment 5 of the present invention will be described with reference to the drawings.
First, the process up to the formation of the TFT in FIG. In addition, the same thing as the said embodiment is represented with the same code | symbol. FIG. 21 shows only one TFT. Note that when the TFT is manufactured, direct writing can be performed at high speed by using the exposure apparatus shown in FIG. Therefore, the cost for manufacturing a new mask and the period for manufacturing the mask are not required, so that cost reduction can be realized.

  After the interlayer insulating film 17 is formed, a planarizing film to be the second interlayer insulating film 19 is formed. As the planarizing film, the one described in the above embodiment can be used (FIG. 21A).

  Next, contact holes are formed in the second interlayer insulating film 19 and the interlayer insulating film 17 using a resist mask.

  Next, a contact hole reaching the semiconductor layer is opened. The contact hole can be formed by etching using a resist mask until the semiconductor layer is exposed, and can be formed by either wet etching or dry etching. Note that etching may be performed once depending on conditions, or may be performed in multiple steps. When etching is performed a plurality of times, both wet etching and dry etching may be used (FIG. 21B).

  Then, a conductive layer covering the contact hole and the second interlayer insulating film 19 is formed. The conductive layer is processed into a desired shape, so that the connection portion 161a, the wiring 161b, and the like are formed. This wiring may be a single layer of aluminum, copper, an aluminum / carbon / nickel alloy, an aluminum / carbon / molybdenum alloy, etc., but from the substrate side, a laminated structure of molybdenum, aluminum, molybdenum, a laminated structure of titanium, aluminum, and titanium. Alternatively, a stacked structure of titanium, titanium nitride, aluminum, or titanium may be employed (FIG. 21C). In addition, if the exposure apparatus of FIG. 1 is used in order to make the said conductive layer into a desired shape, cost reduction is realizable.

  Thereafter, a third interlayer insulating film 163 is formed so as to cover the connection portion 161 a, the wiring 161 b, and the second interlayer insulating film 19. As the material of the third interlayer insulating film 163, a coating film of acrylic, polyimide, siloxane or the like having self-flatness can be suitably used. In this embodiment mode, siloxane is used as the third interlayer insulating film 163 (FIG. 21D).

  Subsequently, an insulating film may be formed using silicon nitride or the like over the third interlayer insulating film 163. This is formed in order to prevent the third interlayer insulating film 163 from being etched more than necessary in the subsequent etching of the pixel electrode. Therefore, when the ratio of the etching rate between the pixel electrode and the third interlayer insulating film is large, it may not be provided.

Subsequently, a contact hole that penetrates the third interlayer insulating film 163 and reaches the connection portion 161a is formed.
A conductive layer having a light-transmitting property is formed so as to cover the contact hole and the third interlayer insulating film 163 (or the insulating film), and then the light-transmitting conductive layer is processed to form the first thin film light-emitting element. 1 electrode 164 is formed. Here, the first electrode 164 is in electrical contact with the connection portion 161a.

  The material of the first electrode 164 is aluminum (Al), silver (Ag), gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), titanium (Ti), etc. Conductive metals, or alloys such as aluminum-silicon (Al-Si), aluminum-titanium (Al-Ti), aluminum-silicon-copper (Al-Si-Cu), or titanium nitride (TiN) Metal material nitride, ITO (indium tin oxide), ITO containing silicon, indium oxide mixed with 2-20 [wt%] zinc oxide (ZnO) O or the like can be formed (indium zinc oxide) or the like of the metal compound.

  In addition, the electrode for extracting light may be formed of a conductive film having transparency, ITO (indium tin oxide), ITO containing silicon (ITSO), zinc oxide of 2 to 20 [wt%] in indium oxide. In addition to a metal compound such as IZO (indium zinc oxide) mixed with (ZnO), an ultrathin metal such as Al or Ag is used. In the case where light emission is extracted from the second electrode, a material with high reflectivity (Al, Ag, or the like) can be used for the first electrode 164. In this embodiment mode, ITSO is used as the first electrode 164 (FIG. 22A).

  Next, an insulating film made of an organic material or an inorganic material is formed so as to cover the third interlayer insulating film 163 (or the insulating film) and the first electrode 164. Subsequently, the insulating film is processed so that part of the first electrode 164 is exposed, so that a partition 165 is formed. As a material for the partition wall 165, a photosensitive organic material (acrylic, polyimide, or the like) is preferably used, but it may be formed of an organic material or an inorganic material that does not have photosensitivity. Further, a black pigment or dye such as titanium black or carbon nitride may be dispersed in the material of the partition wall 165 using a dispersing material or the like, and the partition wall 165 may be blackened and used for a black matrix. It is desirable that the end surface of the partition wall 165 facing the first electrode has a curvature, and has a tapered shape in which the curvature continuously changes (FIG. 22B).

  Next, a layer 166 containing a light-emitting substance is formed, and then a second electrode 167 covering the layer 166 containing a light-emitting substance is formed. Accordingly, a light-emitting element 193 in which the layer 166 containing a light-emitting substance is sandwiched between the first electrode 164 and the second electrode 167 can be manufactured, and a voltage higher than that of the second electrode can be applied to the first electrode. Light emission can be obtained by applying the light (FIG. 22C). As an electrode material used for forming the second electrode 167, a material similar to the material of the first electrode can be used. In this embodiment mode, aluminum is used as the second electrode.

  The layer 166 containing a light-emitting substance is formed by a vapor deposition method, an inkjet method, a spin coating method, a dip coating method, or the like. The layer 166 containing a light-emitting substance may be a stack of layers having functions such as hole transport, hole injection, electron transport, electron injection, and light emission, or may be a single layer of a light-emitting layer. In addition, as a material used for a layer containing a light-emitting substance, an organic compound is usually used in a single layer or a stacked layer, but in the present invention, for example, a layer in contact with the first or second electrode is made of an organic compound. An inorganic compound may be used for part of the film.

Thereafter, a silicon oxide film containing nitrogen is formed as a passivation film by a plasma CVD method. In the case of using a silicon oxide film containing nitrogen, a silicon oxynitride film manufactured from SiH ₄ , N ₂ O, NH ₃ by a plasma CVD method, or a silicon oxynitride film manufactured from SiH ₄ , N ₂ O, Alternatively, a silicon oxynitride film formed from a gas obtained by diluting SiH ₄ and N ₂ O with Ar may be formed.

Further, a silicon oxynitride silicon film formed from SiH ₄ , N ₂ O, and H ₂ may be applied as the passivation film. Of course, the first passivation film is not limited to a single layer structure, and another insulating film containing silicon may be used as a single layer structure or a laminated structure. Further, a multilayer film of carbon nitride film and silicon nitride film, a multilayer film of styrene polymer, a silicon nitride film, or a diamond-like carbon film may be formed instead of the silicon oxide film containing nitrogen.

  Subsequently, the display portion is sealed in order to protect the light emitting element from a substance that promotes deterioration such as water. In the case where the counter substrate is used for sealing, bonding is performed with an insulating sealing material so that the external connection portion is exposed. A space between the counter substrate and the element substrate may be filled with an inert gas such as dry nitrogen, or a sealing material may be applied to the entire surface of the pixel portion to bond the counter substrate. It is preferable to use an ultraviolet curable resin or the like for the sealing material. The sealing material may contain a desiccant or particles for keeping the gap between the substrates constant. Subsequently, a flexible wiring substrate is attached to the external connection portion, whereby the light emitting device is completed.

  One example of the structure of the light-emitting device manufactured as described above will be described with reference to FIG. In addition, even if the shapes are different, parts showing similar functions are denoted by the same reference numerals, and explanations thereof are omitted. In this embodiment mode, the thin film transistor 170 is connected to the light emitting element 193 through the connection portion 161a.

  FIG. 23A illustrates a structure in which the first electrode 164 is formed using a light-transmitting conductive film, and light emitted from the layer 166 containing a light-emitting substance is extracted to the substrate 31 side. Reference numeral 194 denotes a counter substrate, which is fixed to the substrate 31 using a sealant or the like after the light emitting element 193 is formed. By filling a light-transmitting resin 188 between the counter substrate 194 and the element and sealing the element, the light-emitting element 193 can be prevented from being deteriorated by moisture. Further, it is desirable that the resin 188 has a hygroscopic property. Further, when a highly light-transmitting desiccant 189 is dispersed in the resin 188, the influence of moisture can be further suppressed, which is a more desirable form.

  FIG. 23B illustrates a structure in which both the first electrode 164 and the second electrode 167 are formed using a light-transmitting conductive film, and light can be extracted to both the substrate 31 and the counter substrate 194. It has become. Further, in this configuration, by providing the polarizing plate 190 outside the substrate 31 and the counter substrate 194, the screen can be prevented from being seen through, and visibility is improved. A protective film 191 is preferably provided outside the polarizing plate 190.

  Note that either an analog video signal or a digital video signal may be used for the light-emitting device of the present invention having a display function. When a digital video signal is used, the video signal is classified into one using a voltage and one using a current. When the light emitting element emits light, the video signal input to the pixel has a constant voltage and a constant current. When the video signal has a constant voltage, the voltage applied to the light emitting element is constant. And the current flowing through the light emitting element is constant. In addition, a video signal having a constant current includes a constant voltage applied to the light emitting element and a constant current flowing in the light emitting element. A constant voltage applied to the light emitting element is constant voltage driving, and a constant current flowing through the light emitting element is constant current driving. In constant current driving, a constant current flows regardless of the resistance change of the light emitting element. Any of the above driving methods may be used for the light emitting device and the driving method thereof of the present invention.

  The light emitting device of the present invention having such a configuration is a highly reliable light emitting device. The light-emitting device of the present invention having such a structure is a light-emitting device that can obtain blue light emission with good color purity. The light emitting device of the present invention having such a configuration is a light emitting device with good color reproducibility. This embodiment can be used in combination with an appropriate structure of the above embodiment.

(Embodiment 6)
In this embodiment mode, the appearance of a panel which is a light-emitting device of the present invention will be described with reference to FIG. FIG. 24A is a top view of a panel in which a transistor and a light-emitting element formed over a substrate 4001 are sealed with a sealant formed between the substrate 4001 and a counter substrate 4006. FIG. 24 corresponds to the cross-sectional view of FIG. Further, the structure of the light emitting element mounted on this panel is the structure as shown in the above embodiment mode.

  A sealant 4005 is provided so as to surround the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004 which are provided over the substrate 4001. A counter substrate 4006 is provided over the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004. Therefore, the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004 are sealed together with the filler 4007 by the substrate 4001, the sealant 4005, and the counter substrate 4006.

The pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004 provided over the substrate 4001 include a plurality of thin film transistors. In FIG. 24B, the thin film transistor 4008 included in the signal line driver circuit 4003 is provided. And a thin film transistor 4010 included in the pixel portion 4002.
The light emitting element 4011 is electrically connected to the thin film transistor 4010.

  The wiring 4014 corresponds to a wiring for supplying a signal or a power supply voltage to the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004. The wiring 4014 is connected to the connection terminal 4016 through the wiring 4015. The connection terminal 4016 is electrically connected to a terminal included in a flexible printed circuit (FPC) 4018 through an anisotropic conductive film 4019.

  Note that as the filler 4007, in addition to an inert gas such as nitrogen or argon, an ultraviolet curable resin or a thermosetting resin can be used, and polyvinyl chloride, acrylic, polyimide, epoxy resin, silicon resin, polyvinyl butyral, Alternatively, ethylene vinylene acetate can be used.

Note that the light-emitting device of the present invention includes in its category a panel in which a pixel portion having a light-emitting element is formed and a module in which an IC is mounted on the panel.
This embodiment mode can be combined with any appropriate structure of the above embodiment mode as appropriate.

(Embodiment 7)
In this embodiment mode, pixel circuits and protection circuits included in the panel and module described in Embodiment Mode 6 and operations thereof will be described. Note that the cross-sectional views shown in FIGS. 21 to 24 are cross-sectional views of the driving TFT 1403 or the switching TFT 1401 and the light emitting element 1405.

  In the pixel shown in FIG. 25A, a signal line 1410 and power supply lines 1411 and 1412 are arranged in the column direction, and a scanning line 1414 is arranged in the row direction. The pixel further includes a switching TFT 1401, a driving TFT 1403, a current control TFT 1404, a capacitor element 1402, and a light emitting element 1405.

  The pixel shown in FIG. 25C is different from the pixel shown in FIG. 25A in that the gate electrode of the driving TFT 1403 is connected to the power supply line 1412 arranged in the row direction TFT. It is the same configuration. That is, both pixels shown in FIGS. 25A and 25C show the same equivalent circuit diagram. However, in the case where the power supply line 1412 is arranged in the row direction (FIG. 25A) and in the case where the power supply line 1412 is arranged in the column direction (FIG. 25C), each power supply line has a different layer. It is formed of a conductive film. Here, attention is paid to the wiring to which the gate electrode of the driving TFT 1403 is connected, and FIGS. 25A and 25C are separately illustrated in order to indicate that the layers for manufacturing these are different.

  As a feature of the pixel shown in FIGS. 25A and 25C, a driving TFT 1403 and a current control TFT 1404 are connected in series in the pixel, and the channel length L (1403) and channel width W ( 1403), the channel length L (1404) and the channel width W (1404) of the current control TFT 1404 satisfy L (1403) / W (1403): L (1404) / W (1404) = 5 to 6000: 1. It is good to set as follows.

  Note that the driving TFT 1403 operates in a saturation region and has a role of controlling a current value flowing through the light emitting element 1405, and the current control TFT 1404 operates in a linear region and has a role of controlling supply of current to the light emitting element 1405. . Both TFTs preferably have the same conductivity type in terms of manufacturing process, and in this embodiment mode, they are formed as n-channel TFTs. The driving TFT 1403 may be a depletion type TFT as well as an enhancement type. In the light emitting device of the present invention having the above configuration, since the current control TFT 1404 operates in a linear region, a slight change in Vgs of the current control TFT 1404 does not affect the current value of the light emitting element 1405. That is, the current value of the light emitting element 1405 can be determined by the driving TFT 1403 operating in the saturation region. With the above structure, it is possible to provide a light-emitting device in which luminance unevenness of a light-emitting element due to variation in TFT characteristics is improved and image quality is improved.

  In the pixels shown in FIGS. 25A to 25D, the switching TFT 1401 controls input of a video signal to the pixel. When the switching TFT 1401 is turned on, the video signal is input into the pixel. Then, the voltage of the video signal is held in the capacitor element 1402. Note that FIGS. 25A and 25C illustrate a structure in which the capacitor 1402 is provided; however, the present invention is not limited to this, and a capacitor for holding a video signal can be covered by a gate capacitor or the like. In that case, the capacitor 1402 is not necessarily provided.

  The pixel shown in FIG. 25B has the same pixel structure as that shown in FIG. 25A except that a TFT 1406 and a scanning line 1414 are added. Similarly, the pixel illustrated in FIG. 25D has the same pixel structure as that illustrated in FIG. 25C except that a TFT 1406 and a scanning line 1414 are added.

  The TFT 1406 is controlled to be turned on or off by a newly arranged scanning line 1414. When the TFT 1406 is turned on, the charge held in the capacitor element 1402 is discharged, and the current control TFT 1404 is turned off. That is, the arrangement of the TFT 1406 can forcibly create a state where no current flows through the light-emitting element 1405. Therefore, the TFT 1406 can be called an erasing TFT. Therefore, the configurations in FIGS. 25B and 25D can improve the duty ratio because the lighting period can be started simultaneously with or immediately after the start of the writing period without waiting for signal writing to all the pixels. It becomes possible to do.

  In the pixel shown in FIG. 25E, a signal line 1410, a power supply line 1411 are arranged in the column direction, and a scanning line 1414 is arranged in the row direction. Further, the pixel includes a switching TFT 1401, a driving TFT 1403, a capacitor element 1402, and a light emitting element 1405. The pixel illustrated in FIG. 25F has the same pixel structure as that illustrated in FIG. 25E except that a TFT 1406 and a scanning line 1415 are added. Note that the duty ratio of the structure in FIG. 25F can also be improved by the arrangement of the TFT 1406.

As described above, various pixel circuits can be employed. In particular, in the case where a thin film transistor is formed from an amorphous semiconductor film, it is preferable to increase the semiconductor film of the driving TFT 1403. Therefore, it is preferable that the pixel circuit be a top emission type in which light from the light emitting element is emitted from the counter substrate side.
Such an active matrix light-emitting device is considered to be advantageous because it can be driven at a low voltage because a TFT is provided in each pixel when the pixel density is increased.

  In this embodiment mode, an active matrix light-emitting device in which each pixel is provided with each TFT has been described; however, the present invention can also be applied to a passive matrix light-emitting device. A passive matrix light-emitting device has a high aperture ratio because a TFT is not provided for each pixel. In the case of a light-emitting device in which light emission is emitted to both sides of a light-emitting stack, transmittance is increased when a passive matrix light-emitting device is used.

  Next, the case where a diode is provided as a protective circuit in the scan line and the signal line will be described using the equivalent circuit illustrated in FIG.

  In FIG. 26, a switching TFT 1401, a driving TFT 1403, a capacitor element 1402, and a light emitting element 1405 are provided in the pixel portion 1500. The signal line 1410 is provided with diodes 1561 and 1562. Similarly to the switching TFT 1401 or 1403, the diodes 1561 and 1562 are manufactured based on the above embodiment mode and include a gate electrode, a semiconductor layer, a source electrode, a drain electrode, and the like. The diodes 1561 and 1562 operate as diodes by connecting a gate electrode and a drain electrode or a source electrode.

Common potential lines 1554 and 1555 connected to the diode are formed in the same layer as the gate electrode. Therefore, in order to connect to the source electrode or drain electrode of the diode, it is necessary to form a contact hole in the gate insulating film.
A diode provided in the scan line 1414 has a similar structure.

Thus, according to the present invention, the protection diode provided in the input stage can be formed simultaneously. Note that the position where the protective diode is formed is not limited to this, and the protective diode can be provided between the driver circuit and the pixel.
This embodiment mode can be combined with any appropriate structure of the above embodiment mode as appropriate.

(Embodiment 8)
An electronic apparatus according to an eighth embodiment of the present invention will be described with reference to FIGS. This electronic apparatus has the light emitting device of the present invention, and is mounted with a module as shown in the above-described embodiment.

  As this electronic device, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio component, etc.), a computer, a game device, a portable information terminal (mobile computer, cellular phone, portable type) A game machine or an electronic book), an image playback device provided with a recording medium (specifically, a device provided with a display capable of playing back a recording medium such as a Digital Versatile Disc (DVD) and displaying the image). It is done. Specific examples of these electronic devices are shown in FIGS.

  FIG. 27A illustrates a television receiver, a personal computer monitor, and the like. A housing 3001, a display portion 3003, a speaker portion 3004, and the like are included. The display portion 3003 is provided with an active matrix display device. The display portion 3003 has a TFT manufactured by the manufacturing method of the present invention for each pixel. By having this TFT, it is possible to reduce manufacturing time and manufacturing cost, and cost reduction can be realized.

  FIG. 27B illustrates a cellular phone, which includes a main body 3101, a housing 3102, a display portion 3103, a voice input portion 3104, a voice output portion 3105, operation keys 3106, an antenna 3108, and the like. The display portion 3103 is provided with an active matrix display device. The display portion 3103 has a TFT manufactured by the manufacturing method of the present invention for each pixel. By having this TFT, it is possible to reduce manufacturing time and manufacturing cost, and cost reduction can be realized.

  FIG. 27C illustrates a computer, which includes a main body 3201, a housing 3202, a display portion 3203, a keyboard 3204, an external connection port 3205, a pointing mouse 3206, and the like. The display portion 3203 is provided with an active matrix display device. The display portion 3203 has a TFT manufactured by the manufacturing method of the present invention for each pixel. By having this TFT, it is possible to reduce manufacturing time and manufacturing cost, and cost reduction can be realized.

  FIG. 27D illustrates a mobile computer, which includes a main body 3301, a display portion 3302, a switch 3303, operation keys 3304, an infrared port 3305, and the like. The display portion 3302 is provided with an active matrix display device. The display portion 3302 has a TFT manufactured by the manufacturing method of the present invention for each pixel. By having this TFT, a mobile computer with little characteristic deterioration can be obtained.

  FIG. 27E illustrates a portable game machine including a housing 3401, a display portion 3402, speaker portions 3403, operation keys 3404, a recording medium insertion portion 3405, and the like. The display portion 3402 is provided with an active matrix display device. The display portion 3402 includes a TFT manufactured by the manufacturing method of the present invention for each pixel. By having this TFT, it is possible to reduce manufacturing time and manufacturing cost, and cost reduction can be realized.

  FIG. 28 shows a paper display, which includes a main body 3110, a pixel portion 3111, a driver IC 3112, a receiving device 3113, a film battery 3114, and the like. The receiving device can receive a signal from the infrared communication port 3107 of the mobile phone. The pixel portion 3111 is provided with an active matrix display device. The pixel portion 3111 has a TFT manufactured by the manufacturing method of the present invention for each pixel. By having this TFT, it is possible to reduce manufacturing time and manufacturing cost, and cost reduction can be realized.

  As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields.

1 is a perspective view showing a configuration of an exposure apparatus for direct drawing according to Embodiment 1. FIG. (A)-(C) are sectional drawings which show the mask for direct drawing of the exposure apparatus shown in FIG. 1, its modification, and another modification. It is a perspective view which shows typically the state which supplied the linear laser beam for exposure to the mask for direct drawing. FIG. 4 is an enlarged plan view of a part A of the direct drawing mask shown in FIG. 3. It is sectional drawing which shows typically the state which supplies the linear laser beam for exposure to the mask for direct drawing, and exposes the photoresist. It is a top view which shows the one part pattern of the light-emitting device which can expose using the exposure apparatus of FIG. 9A to 9D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to Embodiment 2. 9A to 9D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to Embodiment 2. 9A to 9D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to Embodiment 2. (A), (B) is sectional drawing explaining the manufacturing method of the semiconductor device by Embodiment 3. FIG. (A), (B) is sectional drawing explaining the manufacturing method of the semiconductor device by Embodiment 3. FIG. (A), (B) is sectional drawing explaining the manufacturing method of the semiconductor device by Embodiment 3. FIG. 9 is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to Embodiment 3. FIG. (A) is a block diagram explaining the RFID tag of Embodiment 3, (B), (C) is a perspective view which shows an example of the usage pattern of an RFID tag. (A)-(H) are perspective views which show an example of the usage pattern of the RFID tag of Embodiment 3. FIG. 10 is a cross-sectional view illustrating a method for manufacturing the liquid crystal display device of Embodiment 4. FIG. 10 is a top view illustrating a method for manufacturing a liquid crystal display device of Embodiment 4. FIG. FIGS. 9A to 9D are top views illustrating a method for manufacturing a liquid crystal display device of Embodiment 4. FIGS. 10 is a cross-sectional view illustrating a method for manufacturing the liquid crystal display device of Embodiment 4. FIG. FIGS. 9A and 9B are top views illustrating a method for manufacturing a liquid crystal display device of Embodiment 4. FIGS. FIGS. 9A to 9D are cross-sectional views illustrating a method for manufacturing a light-emitting device according to Embodiment 5. FIGS. FIGS. 9A to 9C are cross-sectional views illustrating a method for manufacturing a light-emitting device according to Embodiment 5. FIGS. (A), (B) is sectional drawing which shows the manufacturing method of the light-emitting device by Embodiment 5. FIG. (A) is a top view which shows the light-emitting device of Embodiment 6, (B) is sectional drawing along AA 'of (A). (A)-(F) are circuit diagrams which show the pixel circuit of the light-emitting device of Embodiment 7. FIG. FIG. 10 is a circuit diagram illustrating a protection circuit of a light-emitting device according to Embodiment 7. (A)-(E) are perspective views which show the example of the electronic device by Embodiment 8. FIG. FIG. 20 is a perspective view illustrating an example of an electronic device according to an eighth embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Light source 1a-1c ... Laser beam 1d ... Irradiation area | region 1e ... Exposure laser beam 2 ... Linear laser optical system 2a ... On-off mechanism 3 ... Mirror 4 ... Doublet cylindrical lens 5 ... Slit 6 ... Direct drawing mask 6a ... quartz substrate 6b, 6d, 6e ... metal film 6c ... opening 7, 9 ... alignment marker 8 ... substrate 8a ... glass substrate 8b ... photoresist film 10 ... stage

Claims (14)

A stage for holding a substrate;
A mask disposed above the substrate held on the stage;
A plurality of openings having substantially the same size provided in the mask, arranged in a line, and at least one opening pattern in which the intervals between the plurality of openings are substantially the same;
A laser processing mechanism for forming a linear laser beam;
The linear laser beam formed by the laser processing mechanism moves a relative position between the laser beam formed by passing through the plurality of openings of the opening pattern and the substrate held on the stage. And a moving mechanism.   2. The laser processing apparatus according to claim 1, wherein a plurality of the opening patterns are provided, and the plurality of opening patterns have a plurality of types of opening shapes and intervals between the opening portions.   3. The laser processing apparatus according to claim 1, wherein each of the openings has a circular shape, an elliptical shape, or a polygonal shape.   4. The laser according to claim 1, wherein an irradiation area where the linear laser beam formed by the laser processing mechanism is irradiated onto the mask is wider than the one opening pattern. Processing equipment.   5. The laser processing apparatus according to claim 1, further comprising a light shielding mechanism that shields a part of the linear laser beam. A stage for holding a substrate to be exposed;
A direct writing mask disposed above the exposure target substrate held on the stage;
A plurality of openings having substantially the same size provided in the direct writing mask, arranged in a line, and at least one opening pattern having substantially the same interval between the openings;
A laser processing mechanism for forming a linear laser beam;
The relative position between the laser beam formed by the linear laser beam formed by the laser processing mechanism passing through the plurality of openings of the opening pattern and the substrate to be exposed held on the stage is determined. An exposure apparatus comprising: a moving mechanism that moves the exposure apparatus.   7. The exposure apparatus according to claim 6, wherein a plurality of the opening patterns are provided, and the plurality of opening patterns have a plurality of types of opening shapes and intervals between the opening portions.   8. The exposure apparatus according to claim 6, wherein each of the openings is circular, elliptical, or polygonal.   9. The irradiation area according to claim 6, wherein an irradiation area where the linear laser beam formed by the processing mechanism is irradiated onto the direct drawing mask is wider than the one opening pattern. Exposure device.   10. The exposure apparatus according to claim 6, further comprising a light shielding mechanism that shields a part of the linear laser beam. Preparing a direct drawing mask provided with an opening pattern in which a plurality of openings having substantially the same size are arranged in a line and the interval between the plurality of openings is substantially the same;
Irradiating the direct drawing mask with a linear laser beam along the opening pattern,
The irradiated linear laser beam passes through the openings of the opening pattern, and the linear laser beam formed by passing through the openings is formed as an exposure laser beam,
An exposure method, wherein direct exposure is performed by moving a relative position between the exposure laser beam and the exposure target substrate while irradiating the exposure laser beam on the exposure target substrate.   12. The exposure method according to claim 11, wherein the shape of each of the plurality of openings is a circle, an ellipse, or a polygon.   13. The exposure method according to claim 11, wherein an irradiation area when irradiating the linear laser beam along the opening pattern is wider than a plurality of openings of the opening pattern.   14. The exposure method according to claim 11, wherein a part of the linear laser beam is shielded when the linear laser beam is irradiated along the opening pattern.