JP2009094165A - Heat treating method, and heat treating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treating method and a heat treating apparatus for improving productivity by decreasing the quantity of particles. <P>SOLUTION: The heat treating apparatus includes a heat treatment chamber 3 having a substrate S, a reactant gas supply system 6 which supplies reactant gas to the heat treatment chamber 3 to make a silicon oxide film on the substrate S react on the reactant gas and then produces reaction products, and a lamp heater 7 which heats the substrate S in the heat treatment chamber 3 to enable the reaction products to be discharged from the heat treatment chamber 3. Then the heat treating apparatus includes a second heating device 8A for introducing preheated purge gas into the heat treatment chamber 3. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a heat treatment method and a heat treatment apparatus.

  In the manufacturing process of a semiconductor device, various surface treatment processes are performed in order to obtain desired device characteristics. For example, a natural oxide film formed on the surface of a silicon substrate is chemically removed from the surface of the silicon substrate before forming the contact plug in order to reduce the contact resistance between the impurity region and the contact plug. Removed.

As a method for removing the natural oxide film, a method of chemically etching the natural oxide film by adsorbing a fluorine-based reaction gas on the surface of the natural oxide film is known. Patent Document 1 discloses that an etchant (for example, NH _X ), which is an intermediate product, is formed on the surface of a silicon substrate by using a reactive gas such as nitrogen trifluoride (NF ₃ ) and hydrogen radicals and reducing the reactive gas with hydrogen radicals. F _Y : x and y are arbitrary integers). The etchant that is an intermediate product reacts with the silicon oxide film to generate a reaction product (for example, an ammonia complex). The reaction product is thermally decomposed by heating the wafer and exhausted as a volatile pyrolytic gas such as ammonia gas (NH ₃ ), hydrogen fluoride gas (HF), or silicon tetrafluoride (SiF ₄ ).

When etching is performed, the etchant also adheres to the inner wall of the processing chamber. Therefore, if etching is repeated a plurality of times, the etchant adhering to the inner wall of the processing chamber becomes thicker, and particles are generated when it is detached from the inner wall of the processing chamber. Therefore, Patent Document 1 introduces a purge gas into the processing space when the substrate is heated to thermally decompose the reaction product. According to this, since the generated pyrolysis gas is exhausted with the flow of the purge gas, the reaction between the pyrolysis gas and the treatment film is suppressed, and the number of particles can be reduced.
JP 2005-203409 A

  The reaction product generated in the etching reaction process easily generates particles by continuing to be adsorbed on the substrate when its own vapor pressure is low. According to the experiment of the present inventor, the technique of Patent Document 1 decreases the temperature of the substrate by introducing the purge gas and increases the adsorption probability of the reaction product. In addition, the introduction of the purge gas locally delays the thermal decomposition reaction of the reaction product, thereby reducing the exhaust efficiency of the reaction product. As a result, the technique of Patent Document 1 can suppress the reaction probability between the treatment film and the pyrolysis gas, while increasing the particles due to the reaction product.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a heat treatment method and a heat treatment apparatus in which the processing performance is improved by reducing the number of particles.

  In order to achieve the above object, the heat treatment method according to claim 1 includes a step of generating a reaction product by reacting a thin film on a substrate and a reaction gas in a processing chamber, and heating the substrate. And a step of exhausting the reaction product from the processing chamber, wherein the step of exhausting the reaction product is to introduce a preheated purge gas into the processing chamber.

According to the heat treatment method of the first aspect, when the purge gas is introduced, the processing chamber and the substrate can suppress the lowering of the temperature of the processing chamber and the substrate due to the higher temperature of the purge gas. Therefore, the heat treatment method according to the first aspect can greatly reduce the adsorption probability of the reaction product by introducing the purge gas, and can smoothly exhaust the reaction product. As a result, the heat treatment method according to the first aspect can suppress the liquefaction and solidification of the reaction product on the substrate, and thus can reduce the number of particles and improve the heat treatment performance.

  The heat treatment method according to claim 2 is the heat treatment method according to claim 1, wherein the step of generating the reaction product arranges a plurality of the substrates along a normal direction of the substrate, The reaction gas is introduced between the adjacent substrates to react the thin film on each substrate with the reaction gas to generate the reaction product, and the reaction product is exhausted. The gist is to exhaust the reaction product by introducing the purge gas heated in advance toward the adjacent substrate.

According to the heat treatment method of the second aspect, even when the reaction product stagnates between the adjacent substrates, the reactive organism can be effectively exhausted.
The heat treatment method according to claim 3 is the heat treatment method according to claim 1 or 2, wherein the substrate in the processing chamber is transported to a storage chamber, and a preheated purge gas is introduced into the storage chamber. Is the gist.

  According to the heat treatment method described in claim 3, even when the reaction product is mixed in the storage chamber, the reaction product can be exhausted by introducing the heated purge gas. Further, the time required for the purge process can be shortened by the amount that the storage chamber performs the purge process. As a result, the occupation time of the processing chamber associated with the purge process can be suppressed, and as a result, the heat treatment performance can be improved.

  The heat treatment apparatus according to claim 4, wherein a reaction chamber that has a substrate and a reaction gas that generates a reaction product by reacting the thin film on the substrate with the reaction gas by supplying a reaction gas to the treatment chamber. A heat treatment apparatus having a supply section and a heating section that allows the reaction product to be exhausted from the processing chamber by heating the substrate in the processing chamber, and introduces a preheated purge gas into the processing chamber The gist is to have a purge gas supply section.

  According to the heat treatment apparatus of the fourth aspect, when the purge gas is introduced, the temperature of the processing chamber and the substrate can be suppressed by the amount of the purge gas being higher. Therefore, the heat treatment apparatus according to claim 4 can significantly reduce the adsorption probability of the reaction product by introducing the purge gas, and can smoothly exhaust the reaction product. As a result, the heat treatment apparatus according to the fifth aspect can suppress the liquefaction and solidification of the reaction product on the substrate, and thus can reduce the number of particles and improve the heat treatment performance.

  The heat treatment apparatus according to claim 5 is the heat treatment apparatus according to claim 4, wherein the heat treatment apparatus has a storage chamber for storing a substrate from the processing chamber, and a purge gas supply unit for introducing a preheated purge gas into the storage chamber. It is summarized as having.

  According to the heat treatment apparatus of the fifth aspect, even when the reaction product is mixed into the storage chamber, the reaction product can be exhausted by introducing the heated purge gas. Further, the time required for the purge process can be shortened by the amount that the storage chamber performs the purge process. As a result, the occupation time of the processing chamber associated with the purge process can be suppressed, and as a result, the heat treatment performance can be improved.

  The heat treatment apparatus according to claim 6 is the heat treatment apparatus according to claim 5, wherein the processing chamber includes a boat that arranges a plurality of the substrates along a normal direction of the substrates, and the reaction The gas supply unit has a reaction gas port that introduces the reaction gas toward the substrate facing each other, and the purge gas supply unit purges the purge gas introduced between the substrates facing each other The main point is to have a port.

  According to the heat treatment apparatus of the sixth aspect, even when the reaction product stagnates between adjacent substrates, the reactive organism can be effectively exhausted.

  As described above, according to the present invention, it is possible to provide a heat treatment method and a heat treatment apparatus in which productivity is improved by reducing the number of particles.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings. FIG. 1 is a side view schematically showing the heat treatment apparatus 1.
In FIG. 1, the heat treatment apparatus 1 includes a load lock chamber (hereinafter simply referred to as an LL chamber 2) and a heat treatment chamber 3 as storage chambers. The LL chamber 2 is a vacuum chamber for carrying in the substrate S from the outside and carrying out the substrate S after the heat treatment, and is fixed at a high position from the floor F of the working chamber by the support member K. As the substrate S, for example, a silicon substrate, a glass substrate, or a ceramic substrate can be used, and the substrate S can be heated and subjected to chemical treatment (hereinafter simply referred to as heat treatment) on the surface of the substrate S. I just need it.

  The LL chamber 2 and the heat treatment chamber 3 have openings 2a and 3a, respectively, and the opening 2a of the LL chamber 2 is directed downward. The opening 3a of the heat treatment chamber 3 is directed upward, and the opening 3a of the heat treatment chamber 3 and the opening 2a of the LL chamber 2 are in close contact with each other with an O-ring interposed therebetween, and are fixed by positioning pins P. . The opening 3a of the heat treatment chamber 3 and the opening 2a of the LL chamber 2 keep the internal space 2S of the LL chamber 2 and the internal space 3S of the heat treatment chamber 3 airtight.

  A partition valve V is provided in the opening 2a of the LL chamber 2, and the internal space 2S of the LL chamber 2 and the internal space 3S of the heat treatment chamber 3 are connected in a state where the partition valve V is opened. As a result, the substrate S can be carried in and out between the internal space 2S of the LL chamber 2 and the internal space 3S of the heat treatment chamber 3.

  A vacuum exhaust system (not shown) is connected to each of the LL chamber 2 and the heat treatment chamber 3, and a vacuum atmosphere of a predetermined pressure is formed in the internal spaces 2S and 3S of the LL chamber 2 and the heat treatment chamber 3 by the exhaust operation of the vacuum exhaust system. The In the internal space 2S of the LL chamber 2, a boat B in which a plurality of substrates S are accommodated in advance is installed so as to be movable up and down. When the boat B descends with the partition valve V opened, and the boat B moves from the LL chamber 2 to the heat treatment chamber 3, the lid Ba, which is the upper end of the boat B, fits into the opening 3a of the heat treatment chamber 3, The internal space 3S of the heat treatment chamber 3 is blocked from the internal space 2S of the LL chamber 2.

  A purge gas supply system 4 is connected to the LL chamber 2. The purge gas supply system 4 includes a purge gas cylinder BP filled with a purge gas, and a first heating device 4A disposed between the purge gas cylinder BP and the LL chamber 2. The first heating device 4A heats the purge gas supplied from the purge gas cylinder BP, and supplies the purge gas heated to a predetermined temperature into the LL chamber 2. When the purge process is performed in the LL chamber 2, the purge gas supply system 4 drives the first heating device 4 </ b> A to supply the heated purge gas to the LL chamber 2.

When the radical supply system 5 is connected to the heat treatment chamber 3 and the radical supply system 5 is driven, hydrogen radicals generated in the radical supply system 5 are supplied to the internal space 3S of the heat treatment chamber 3. The reaction gas supply system 6 is connected to the heat treatment chamber 3, and when the reaction gas supply system 6 is driven, the reaction gas from the reaction gas supply system 6 is supplied to the internal space 3 </ b> S of the heat treatment chamber 3. The heat treatment chamber 3 is provided with a lamp heater 7 for heating the internal space 3S. When the lamp heater 7 is driven, the substrate S in the internal space 3S is heated by the amount of heat from the lamp heater 7.

When a natural oxide film (silicon oxide film) is etched as a heat treatment, a fluoride gas can be used as a reaction gas. As the fluoride gas, one having no carbon and oxygen is preferably used. For example, nitrogen trifluoride (NF ₃ ) can be used. Moreover, the reaction gas should just contain N and H, and may use it individually by 1 type, or may mix and use 2 or more types of reaction gas. The reaction gas may be mixed with a carrier gas such as nitrogen, argon or helium and introduced into the heat treatment chamber 3.

  A purge gas supply system 8 is connected to the heat treatment chamber 3. The purge gas supply system 8 includes a purge gas cylinder BP filled with a purge gas, and a second heating device 8A provided between the purge gas cylinder BP and the heat treatment chamber 3. The second heating device 8A heats the purge gas supplied from the purge gas cylinder BP and raises the temperature to a predetermined temperature. When the purge process is performed in the heat treatment chamber 3, the purge gas supply system 8 drives the second heating device 8 </ b> A to supply the heated purge gas to the internal space 3 </ b> S of the heat treatment chamber 3.

FIG. 2A is a perspective view of the LL chamber 2 with the boat B loaded therein. FIG. 2B is a perspective view of the heat treatment chamber 3 with the boat B loaded therein.
In FIG. 2A, each boat B has a plurality of support rods 9a extending along the vertical direction. Each of the plurality of support bars 9a has a plurality of guide grooves 9b extending in the horizontal direction. Each of the plurality of guide grooves 9b is arranged at a predetermined interval along the vertical direction. For example, when an 8-inch wafer having a diameter of 200 mm is used as the substrate S, the pitch of the guide grooves 9b is 6.35 mm. When a 12-inch wafer having a diameter of 300 mm is used as the substrate S, the pitch of the guide grooves 9b is 10 mm.

  Each of the plurality of support bars 9a has the same height position of each guide groove 9b. When the boat B is disposed inside the LL chamber 2, the plurality of substrates S carried into the LL chamber 2 have their peripheral portions inserted into the guide grooves 9b of the support rods 9a. Accordingly, each of the plurality of substrates S can maintain its own surface direction in the horizontal direction, and can be separated from the other substrates S by a predetermined interval along the vertical direction.

  Each boat B is connected to a drive shaft of a boat motor (not shown). Each boat B receives the driving force of the boat motor while being carried into the LL chamber 2 or the heat treatment chamber 3, and thereby rotates around the center of the substrate S to be mounted.

  A purge port PP that extends along the vertical direction is disposed inside the LL chamber 2. The purge port PP is a pipe extending along the vertical direction, and is separated from the boat B and the substrate S in a state where the boat B is loaded. The purge port PP is connected to the purge gas supply system 4 and introduces the purge gas from the purge gas supply system 4 into the LL chamber 2.

  The purge ports PP are equally distributed along the inner wall of the LL chamber 2 and are equally distributed in the circumferential direction of the substrate S when the substrate S is carried into the LL chamber 2. The purge gas supply system 4 has a plurality of shower nozzles N extending in the horizontal direction. Each of the plurality of shower nozzles N is a circular hole extending toward the center of the LL chamber 2 and is arranged at a predetermined interval along the vertical direction.

Each of the plurality of shower nozzles N arranges its own opening toward the space between the substrates S stacked along the vertical direction when the boat B is carried into the LL chamber 2. The purge gas supplied to the LL chamber 2 is jetted in a preheated state toward the space between the substrates S stacked in the vertical direction. The purge gas sprayed toward the space between the substrates S spreads along the surface direction of the substrates S and is exhausted while flowing the gas on the front and back surfaces of the substrates S. At this time, the purge gas that comes into contact with the substrate S suppresses heat exchange with the substrate S by the amount that is preheated, and suppresses the temperature reduction of the substrate S.

  As the purge gas, for example, nitrogen, argon, helium, or xenon can be used, and two or more of these may be selected and mixed. That is, the purge gas may be any gas that is chemically stable in the heat treatment reaction system.

  In FIG. 2B, a radical port RP and a reaction gas port AP extending along the vertical direction are disposed inside the heat treatment chamber 3. The radical port RP and the reaction gas port AP are separated from the boat B and the substrate S in a state where the boat B is loaded. The radical port RP is connected to the radical supply system 5 and introduces a radical-generating gas from the radical supply system 5 into the heat treatment chamber 3. The reaction gas port AP is connected to the reaction gas supply system 6 and the purge gas supply system 8, and introduces the reaction gas from the reaction gas supply system 6 or the purge gas from the purge gas supply system 8 into the heat treatment chamber 3. .

  The radical port RP and the reaction gas port AP are equally arranged along the inner wall of the heat treatment chamber 3, respectively, and are equally arranged along the circumferential direction of the substrate S when the substrate S is loaded into the heat treatment chamber 3. Each of the radical port RP and the reaction gas port AP has a plurality of shower nozzles N extending in the horizontal direction. Each of the plurality of shower nozzles N is arranged at a predetermined interval along the vertical direction. Each of the plurality of shower nozzles N arranges its own opening toward the space between the substrates S stacked along the vertical direction when the boat B is carried into the heat treatment chamber 3. The radical state gas and the reactive gas supplied to the heat treatment chamber 3 are each injected toward the space between the substrates S loaded in the vertical direction. Further, the purge gas supplied to the heat treatment chamber 3 is jetted from the shower nozzle N toward the space between the substrates S. The purge gas sprayed between the substrates S spreads along the surface direction of the substrates S and is exhausted while the gases on the front and back surfaces of the substrates S are sequentially pushed. At this time, the purge gas that comes into contact with the substrate S suppresses heat exchange with the substrate S by the amount heated in advance to a predetermined temperature, and suppresses the temperature reduction of the substrate S.

Next, heat treatment for etching the natural oxide film using the heat treatment apparatus 1 will be described below. FIG. 3 is a flowchart showing each step of the heat treatment.
In FIG. 3, the heat treatment apparatus 1 first carries a plurality of external substrates S into the LL chamber 2 (carrying-in process: step S11). That is, the heat treatment apparatus 1 moves the boat B to the LL chamber 2 and loads a plurality of external substrates S on the boat B. When the carry-in process is completed, the heat treatment apparatus 1 depressurizes the LL chamber 2 so that the substrate S can be transferred (decompression process: step S12). When the heat treatment apparatus 1 finishes the decompression process, the boat B is moved down to transport the substrate S in the LL chamber 2 to the heat treatment chamber 3 (transport process: step S13).

When the transfer process is completed, the heat treatment apparatus 1 supplies a reaction gas and radicals to the heat treatment chamber 3 to react the natural oxide film (silicon oxide film in this embodiment), the reaction gas, and hydrogen radicals on the substrate S. Thus, a reaction product ((NH ₄ ) ₂ SiF _{6 in} this embodiment) is generated (supply process: step S14). When finishing the supply process step S14, the heat treatment apparatus 1 heats each substrate S with the lamp heater 7 mounted in the heat treatment chamber 3, and decomposes the reaction products. Most of the decomposed reaction products (hereinafter simply referred to as pyrolysis gas) are removed from the surface of each substrate S as a gas and discharged from the internal space 3S of the heat treatment chamber 3 by vacuum evacuation. An oxide film is etched (heating step: step S15). On the other hand, part of the pyrolysis gas,
The reaction product that is not decomposed is narrow in the space between the substrates S, and thus is adsorbed on the surface of the substrate S without being sufficiently exhausted or stagnated in the space between the substrates S.

  When the heating process is finished, the heat treatment apparatus 1 introduces a purge gas into the internal space 3S of the heat treatment chamber 3 (purge process: step S16). That is, the heat treatment apparatus 1 drives the second heating apparatus 8A and introduces the purge gas heated to a predetermined temperature into the internal space 3S. The reaction product and pyrolysis gas remaining in the heat treatment chamber 3 are swept away by the introduced purge gas and exhausted together with the purge gas. At this time, since the purge gas is preliminarily raised to a predetermined temperature, the front surface of the substrate S, the back surface of the substrate S, the inner wall of the heat treatment chamber 3, the boat B, and the like that are in contact with the purge gas are rapidly changed by heat exchange with the purge gas. Can be avoided. For this reason, the reaction product and pyrolysis gas swept away by the purge gas are difficult to be adsorbed on the surface of the substrate S, the back surface of the substrate S, and each part of the heat treatment chamber 3.

  When the purge process is completed, the heat treatment apparatus 1 moves the boat B from the heat treatment chamber 3 to the LL chamber 2 and transfers each substrate S to the LL chamber 2 (transfer step: step S17). When the transfer process is completed, the heat treatment apparatus 1 raises the pressure in the LL chamber 2 so that the substrate S can be carried out (pressure increase process: step S18). That is, the heat treatment apparatus 1 closes the partition valve V and vents the LL chamber 2 in a state where the substrate S is disposed in the LL chamber 2.

  At this time, the heat treatment apparatus 1 drives the first heating apparatus 4 </ b> A to continuously introduce the purge gas adjusted to a predetermined temperature into the internal space 2 </ b> S of the LL chamber 2. The reaction product and pyrolysis gas remaining in the vicinity of the substrate S are swept away by the purge gas and exhausted together with the purge gas. As a result, even when the reaction product is mixed into the storage chamber, the reaction product can be exhausted by introducing the heated purge gas.

According to the above embodiment, the following effects can be obtained.
(1) In the above embodiment, the heat treatment apparatus 1 includes the purge gas supply system 8 for supplying the heated purge gas in the heat treatment chamber 3, and introduces a preheated purge gas toward the heat treatment chamber 3 having the substrate S. Therefore, each of the plurality of substrates S and each part of the heat treatment chamber 3 can suppress the rapid decrease in temperature due to the high temperature of the purge gas while the reaction product and the pyrolysis gas are exhausted. Therefore, the heat treatment apparatus 1 can greatly reduce the probability of adsorption of the reaction product and the pyrolysis gas in the heat treatment chamber 3, and can smoothly exhaust the reaction product and the pyrolysis gas. As a result, the heat treatment apparatus 1 can suppress the liquefaction and solidification of the reaction product on the substrate S, the reaction caused by the pyrolysis gas, and the like. Can be improved.

  (2) In the above-described embodiment, the heat treatment apparatus 1 includes the purge gas supply system 4 for supplying the heated purge gas in the LL chamber 2, and introduces the purge gas heated in advance toward the LL chamber 2 having the substrate S. As a result, even when the reaction product is mixed into the storage chamber, the reaction product can be exhausted by introducing the heated purge gas.

In addition, you may implement the said embodiment in the following aspects.
In the above embodiment, the purge process (step S16) continues to heat the purge gas during the purge time. The purge step is not limited to this, and the time necessary for exhausting the reaction product and the pyrolysis gas (shortest purge time) is measured in advance based on the test and the like, and the purge gas is heated only during the minimum purge time, The configuration may be such that when the minimum purge time is exceeded, the heating of the purge gas is stopped. According to this configuration, the introduction time of the heated purge gas can be shortened, and consequently the cooling time of the heated substrate S can be shortened.

In the above embodiment, the heat treatment chamber 3 introduces the reaction gas and the purge gas from the common reaction gas port AP. However, the heat treatment apparatus 1 may be configured to introduce the reaction gas and the purge gas from different gas ports. According to this, since the purge gas can avoid mixing of the reaction gas, the number of particles can be reduced with higher reproducibility.

  In the above embodiment, the heated purge gas is introduced into both the LL chamber 2 and the heat treatment chamber 3. However, the present invention is not limited to this, and the configuration may be such that the heated purge gas is introduced into one of the LL chamber 2 and the heat treatment chamber 3. In other words, the present invention only needs to introduce a heated purge gas into a space where the pyrolysis gas and the substrate S coexist.

  In the above embodiment, the heated purge gas is supplied to the substrate S in the purge process and the pressure increasing process. However, the present invention is not limited to this, and the configuration may be such that the heated purge gas is supplied in the transfer process, and may be any structure as long as it is supplied in at least one of the heating process, the purge process, the transfer process, and the pressure increasing process. . That is, the present invention does not limit the introduction timing of the heated purge gas, and any configuration may be used as long as the heated purge gas is introduced into the space where the pyrolysis gas and the substrate S coexist.

The sectional side view which shows the heat processing apparatus. (A), (b) is a perspective view which shows a LL chamber and a heat processing chamber, respectively. The flowchart which shows each process of heat processing.

Explanation of symbols

  AP ... Reaction gas port as first gas port and second gas port, B ... Boat, PP ... Purge port as second gas port, S ... Substrate, 1 ... Heat treatment device, 2 ... Load lock constituting storage chamber Chamber, 3 ... heat treatment chamber, 4, 8 ... purge gas supply system as purge gas supply unit, B ... boat, 4A ... first heating device constituting purge gas supply unit, 6 ... reaction gas supply system as reaction gas supply unit, 7: Lamp heater as heating unit, 8A: Second heating device constituting purge gas supply unit.

Claims (6)

Reacting a thin film on a substrate with a reactive gas in a processing chamber to generate a reaction product;
Evacuating the reaction product from the processing chamber by heating the substrate;
A heat treatment method comprising:
Exhausting the reaction product comprises:
A heat treatment method characterized by introducing a preheated purge gas into the treatment chamber. The heat treatment method according to claim 1,
The step of generating the reaction product includes:
A plurality of the substrates are arranged along the normal direction of the substrate, and the thin film on each substrate and the reactive gas are reacted by introducing the reactive gas between the adjacent substrates. Producing the reaction product;
Exhausting the reaction product comprises:
Evacuating the reaction product by introducing the preheated purge gas between adjacent substrates;
A heat treatment method characterized by the above. The heat treatment method according to claim 1 or 2,
A heat treatment method, wherein the substrate in the processing chamber is transported to a storage chamber, and a preheated purge gas is introduced into the storage chamber. A processing chamber having a substrate;
A reaction gas supply unit that generates a reaction product by reacting the reaction gas with the thin film on the substrate by supplying a reaction gas to the processing chamber;
A heat treatment apparatus having a heating unit that allows the reaction product to be exhausted from the process chamber by heating the substrate in the process chamber;
A heat treatment apparatus having a purge gas supply unit for introducing a preheated purge gas into the processing chamber. The heat treatment apparatus according to claim 4,
A storage chamber for storing a substrate from the processing chamber;
A heat treatment apparatus comprising a purge gas supply unit for introducing a preheated purge gas into the storage chamber. The heat treatment apparatus according to claim 4 or 5,
The processing chamber is
A boat for arranging a plurality of the substrates along a normal direction of the substrates;
The reaction gas supply unit includes:
A first gas port for introducing the reaction gas toward the substrate facing each other;
The purge gas supply unit
A heat treatment apparatus comprising a second gas port for introducing the purge gas toward the substrate facing each other.

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