JP2009199884A - Light-emitting device and display using the same - Google Patents

Abstract

Provided is a light-emitting element that can emit light with high luminance at a low direct current voltage and can obtain R, G, and B light with high color purity when a full-color method is applied.
A light-emitting element according to the present invention includes a light-emitting layer and a pair of electrodes that inject current into the light-emitting layer. The light emitting layer 13 includes GaN-based semiconductor particles 21 and a light absorber 22 that absorbs at least part of light having a wavelength of 470 nm to 800 nm. The light emitting layer 13 is formed by dispersing the GaN-based semiconductor particles 21 and the light absorber 22.
[Selection] Figure 1

Description

  The present invention relates to a light emitting element using a GaN-based semiconductor and a display device using the light emitting element.

  A GaN-based semiconductor has excellent characteristics as a light emitting material, and an LED (Light Emitting Diode) using the single crystal thin film has been put into practical use as a low voltage, high luminance DC light emitting device. Note that a light-emitting element using a GaN-based semiconductor generally emits blue light.

  A light emitting element using such a GaN-based semiconductor is used in a display device or the like. As an example, for example, Patent Document 1 discloses a white LED using a GaN-based semiconductor that can be used as a white light source for a display device. In this white LED, a GaInN-based blue light emitting element is used, and a GaN substrate constituting the blue light emitting element is doped with a fluorescence center to convert a part of blue light emitted from the blue light emitting element into yellow. Yes. That is, this white LED obtains white light by mixing blue and yellow.

On the other hand, various techniques for realizing a full-color display device using a light emitting element of monochromatic light have been studied. Various organic EL (Electro Luminescence) methods have been proposed. For example, Patent Document 2 discloses a blue light emitted from a light emitting layer using a color conversion layer (fluorescent medium) formed of a phosphor material. An organic EL that realizes a full-color display device by converting light into green light or red light to produce RGB pixels is disclosed.
Japanese Patent No. 3397141 Japanese Patent No. 3369618

  The present inventors have found that when a particulate GaN-based semiconductor (GaN-based semiconductor particles) is used, a light-emitting element capable of emitting light with high luminance at a low direct current can be realized. Therefore, the present inventors tried to realize an RGB (R: red, G: green, B: blue) full-color light emitting element using GaN-based semiconductor particles.

  FIG. 3 shows a schematic cross-sectional view of an RGB full-color light-emitting element in which a full-color method as disclosed in Patent Document 2 is applied to a light-emitting element using GaN-based semiconductor particles. In the RGB full-color light emitting device 100, a back electrode 102, a light emitting layer 103, and a transparent electrode 104 are arranged in this order on a substrate 101. Further, a color conversion layer (a layer 105a that converts red light into a green light, green light) is formed on the transparent electrode 104. It is formed by providing a layer 105b) to be converted. In the figure, 106 is a black matrix. The light emitting layer 103 includes GaN-based semiconductor particles 201. The GaN-based semiconductor particles 201 are in contact with, for example, the back electrode 102 and the transparent electrode 104 so that the current injected into the light emitting layer 103 by the back electrode 102 and the transparent electrode 104 is efficiently injected into the GaN-based semiconductor particle 201. Further, it is dispersed in the light emitting layer 103. The back electrode 102 and the transparent electrode 104 are electrically connected via a DC power source 107. In the light emitting element 100, when a voltage is applied to the DC power source 107, holes are injected into the light emitting layer 103 from the back electrode 102 connected to the positive electrode, and electrons are injected from the transparent electrode 104 connected to the negative electrode. The electrons and holes injected into the light emitting layer 103 are injected into the GaN-based semiconductor particles 201 and recombined within the particles 201 to emit light. This light passes through the transparent electrode 104 and the color conversion layers 105a and 105b, and is extracted to the outside of the light emitting element 100 as R, G, and B light.

However, in the case of the light emitting element having the above configuration, there is a problem that the color purity of each of R, G, and B light extracted is poor. In the figure, arrows X _{1 to} X ₃ indicate luminescent components other than R, G, and B colors.

  Therefore, the present invention is a light-emitting element that can emit light with high luminance at a low direct current voltage and can emit blue light with high color purity. Further, when a full-color method is applied, R, G with high color purity can be obtained. An object of the present invention is to provide a light emitting element capable of obtaining B light. Another object of the present invention is to provide a display device using such a light emitting element.

  In the light-emitting element using GaN-based semiconductor particles, the present inventors have found that the phenomenon that the color purity of each light of R, G, and B deteriorates due to factors such as surface defects of the GaN-based semiconductor particles and other colors. It has been found that this is due to the fact that the light component of 470 nm to 800 nm is included.

  Therefore, the light-emitting element of the present invention is a light-emitting element including a light-emitting layer and a pair of electrodes for injecting current into the light-emitting layer, and the light-emitting layer includes a GaN-based semiconductor particle and a wavelength of 470 nm to 800 nm. A light absorber that absorbs at least part of the light, and the GaN-based semiconductor particles and the light absorber are dispersed in the light emitting layer.

  The present invention provides a display device including the above-described light emitting element of the present invention.

  The light emitting device of the present invention can cut at least a part of light having a wavelength of 470 nm to 800 nm included in light emission from the GaN-based semiconductor particles by the light absorber dispersed in the light emitting layer. As described above, the light absorber can suppress the extraction of the light component having a wavelength of 470 nm to 800 nm to the outside of the light emitting layer, so that blue light having higher color purity than the conventional one can be realized. In addition, since blue light emission with high color purity can be obtained, R, G, and B light with high color purity can be obtained when a full color system for converting blue light emission into other colors (red, green) is applied. Thereby, it is also possible to realize a full-color display device with high color reproducibility. In addition, since the light-emitting element of the present invention uses GaN-based semiconductor particles, it can emit light with high luminance at a low direct current.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings used in the following description, hatching may be omitted for easy viewing. The structure of the light-emitting element described below is an example of the present invention, and the light-emitting element of the present invention is not limited to the following structure.

(Embodiment 1)
As an embodiment of the light emitting device of the present invention, an RGB full color light emitting device employing a full color system will be described. FIG. 1 is a cross-sectional view illustrating a schematic configuration of an example of the light-emitting element of the present embodiment. In the light emitting element 10, a back electrode 12, a light emitting layer 13, and a transparent electrode 14 are provided on a substrate 11. Furthermore, the light emitting element 10 is provided with color conversion layers 15a and 15b disposed on the transparent electrode 14 as a configuration for realizing full color. The color conversion layer 15a is a layer that converts blue light into red light. The color conversion layer 15b is a layer that converts blue light into green light. In addition, since the blue light should just use the light emitted from the light emitting layer 13, the color conversion layer is unnecessary. In the present embodiment, the black matrix 16 is arranged between the colors in order to suppress the color mixture of the colors. The back electrode 12 and the transparent electrode 14 are electrically connected via a DC power source 17. That is, the light emitting element 10 is formed by arranging the light emitting layer 13 between the back electrode 12 and the transparent electrode 14 which are a pair of electrodes for injecting current into the light emitting layer 13.

  The light emitting layer 13 includes GaN-based semiconductor particles 21 and a light absorber 22, and is formed by dispersing the GaN-based semiconductor particles 21 and the light absorber 22 in a binder resin. The light absorber 22 absorbs at least part of light having a wavelength of 470 nm to 800 nm.

  In the light emitting element 10, when a voltage is applied to the DC power source 17, holes are injected into the light emitting layer 13 from the back electrode 12 connected to the positive electrode, and electrons are injected from the transparent electrode 14 connected to the negative electrode. The electrons and holes injected into the light emitting layer 13 are injected into the GaN-based semiconductor particle 21 and recombined within the particle 21. This recombination causes light emission. Of the light emitted from the GaN-based semiconductor particles 21, at least a part of the light component having a wavelength of 470 nm to 800 nm is absorbed by the light absorber 22. Therefore, the light extracted from the light emitting layer 13 becomes blue light with higher color purity, in which the light components are cut by the light absorber 22. The light extracted from the light emitting layer 13 passes through the transparent electrode 14 and the color conversion layers 15 a and 15 b and is extracted outside the light emitting element 10. Since the blue light is converted into red light or green light through the color conversion layers 15a and 15b, light of each color of R, G, and B is obtained.

  In order to further improve the color purity, a color filter may be further provided above the color conversion layers 15a and 15b. In order to prevent deterioration of the element, a protective film may be provided on the color conversion layers 15a and 15b, or in the case where a color filter is provided.

  Further, in the present embodiment, the black matrix 16 is provided in order to suppress color mixing of each color, but other configurations, for example, a configuration in which a separator for each color pixel is provided in the light emitting layer 13, and a color filter are provided. In such a case, a configuration in which a black matrix is provided between each color pixel of the color filter can be used.

  Hereinafter, each component of the light emitting element 10 will be described in detail.

<Board>
As the substrate 11, a substrate that can support each layer formed thereon is used. Specifically, ceramic substrates such as silicon, Al ₂ O ₃ and AlN, and plastic substrates such as polyester and polyimide can be used. Moreover, a glass substrate (for example, “Corning 1737” manufactured by Corning) or a quartz substrate can be used. A non-alkali glass substrate or a soda lime glass substrate coated with alumina or the like as an ion barrier layer on the surface may be used so that alkali ions or the like contained in ordinary glass do not affect the light emitting element. These are merely examples, and the material of the substrate 11 is not particularly limited thereto.

<Electrode>
Any material can be applied to the electrode (back electrode 12 in this embodiment) arranged on the side from which light is not extracted as long as it is a conductive material generally used for the electrode. For example, a metal thin film such as Au, Ag, Al, Cu, Ta, Ti and Pt can be used. It is also possible to use a multilayer conductive film in which a plurality of such metal thin films are stacked.

The material of the electrode (transparent electrode 14 in the present embodiment) arranged on the light extraction side may be any material that has optical transparency with respect to the wavelength of light emitted from the GaN-based semiconductor particles 21 and has low resistance. It is desirable that Suitable materials for the transparent electrode 14 include, for example, ITO (In ₂ O ₃ doped with SnO ₂ , also referred to as indium tin oxide), metal oxides such as ZnO, AlZnO, and GaZnO, , Conductive polymers such as polyaniline, polypyrrole, PEDOT / PSS (Poly (3,4-ethylnedioxythiophene) / Poly (styrene sulfonate)), and polythiophene, but are not particularly limited thereto.

  For example, as an ITO film-forming method, a method such as a sputtering method, an electron beam evaporation method, or an ion plating method is preferably used for the purpose of improving the transparency or reducing the resistivity. In addition, after film formation, surface treatment such as plasma treatment may be performed for the purpose of resistivity control. The film thickness of the transparent electrode 14 can be determined from the required sheet resistance value and visible light transmittance.

  The electrodes 12 and 14 may be formed so as to cover the entire surface of the layer, or may be constituted by a plurality of striped electrodes. In addition, when the back electrode 12 and the transparent electrode 14 are constituted by a plurality of stripe electrodes, each stripe electrode constituting the back electrode 12 and each stripe electrode constituting the transparent electrode 14 are twisted. Projection of all striped electrodes constituting the back electrode 12 on the light emitting surface (surface parallel to the light emitting layer 13) and all striped electrodes constituting the transparent electrode 14 on the light emitting surface. You may comprise so that what was done may mutually cross. In this case, a predetermined position of the light emitting element can be made to emit light by applying a voltage to each of the stripe electrodes of the back electrode 12 and each of the stripe electrodes of the transparent electrode 14. Can be used.

<Color conversion layer>
The light emitting element 10 of the present embodiment is provided with color conversion layers 15a and 15b in order to achieve full color. The color conversion layer 15a contains a fluorescent material that can convert blue light into red light, and the color conversion layer 15b contains a fluorescent material that can convert blue light into green light. These fluorescent materials may be inorganic materials or organic materials. Specifically, in the case of the color conversion layer 15b, for example, a fluorescent material that absorbs blue light with a wavelength of 470 nm or less and generates fluorescence with a wavelength of 500 nm to 550 nm can be used. For example, a fluorescent material that absorbs blue light with a wavelength of 470 nm or less and generates fluorescence with a wavelength of 700 nm to 800 nm can be used. For example, as a fluorescent substance for green conversion, an inorganic fluorescent substance such as SrGa ₂ S ₄ : Eu, or an organic fluorescent dye such as a coumarin dye can be used. As the fluorescent substance for red color conversion, inorganic fluorescent substances such as SrS: Eu and CaS: Eu, and organic fluorescent dyes such as rhodamine dyes and oxazine dyes can be used.

  As a method for forming the color conversion layers 15a and 15b, various methods such as a vapor deposition method, a printing method, and a dispersion method can be used. The dispersion method is a method in which a resist in which a fluorescent material is dispersed is arranged and then patterned by a photolithography method or the like. This resist contains, for example, a binder resin, a solvent, a curing accelerator, and the like.

<Light emitting layer>
The light emitting layer 13 includes a GaN-based semiconductor particle 21 serving as a light emitter and a light absorber 22 that absorbs at least part of light having a wavelength of 470 nm to 800 nm. The light-emitting layer 13 is further made of a binder resin for dispersing the GaN-based semiconductor particles 21 and the light absorber 22, and a substance intended to improve the injection of electrons and holes into the GaN-based semiconductor particles 21. (For example, a hole transport material, an electron transport material, etc.) may be included.

For example, as an inorganic hole transport material, as an inorganic material exhibiting p-type conductivity, a semi-metal semiconductor such as Si, Ge, SiC, Se, SeTe and As ₂ Se ₃ , ZnSe, CdS, ZnO and CuI, etc. Binary compound semiconductors, chalcopyrite semiconductors such as CuGaS ₂ , CuGaSe ₂ and CuInSe ₂ , mixed crystals thereof, oxide semiconductors such as CuAlO ₂ and CuGaO _2, and mixed crystals thereof. Examples of the organic hole transport material include benzidine derivatives, phthalocyanine derivatives, tetraphenylbutadiene derivatives, triphenylamine derivatives, and diamine derivatives. As the electron transporting material, ITO, metal complexes such as Alq _3, phenanthroline derivatives, silole based derivatives.

  The method for producing the light emitting layer 13 including the GaN-based semiconductor particles 21 and the light absorber 22 is not particularly limited. For example, a paste in which the GaN-based semiconductor particles 21 and the light absorber 22 are mixed in a binder resin is prepared. The paste can be produced by applying the paste on the back electrode 12.

<GaN-based semiconductor particles>
The structure of the GaN-based semiconductor particles 21 in the light emitting layer 13 is not particularly limited, and may be a column structure or a quantum dot structure. The size of the GaN-based semiconductor particles is not particularly limited, but is desirably 0.5 μm or more. In general, since the surface of a semiconductor particle has many surface levels that are a cause of non-radiative recombination, it is desirable that the surface area of the particle be small in order to obtain high luminous efficiency. Therefore, in the present embodiment, it is desirable that the average particle diameter of the GaN-based semiconductor particles 21 be 0.5 μm or more in order to suppress the increase in surface area and obtain high luminous efficiency. Further, considering development on a display device, it is desirable that at least several GaN-based semiconductor particles 21 are included per pixel (about 300 μm square) in order to realize a uniform image display. Therefore, the average particle size of the GaN-based semiconductor particles 21 is desirably 50 μm or less. Here, the particle diameter is a diameter equivalent to light scattering when measured by a laser diffraction / scattering method, and the average particle diameter is a particle diameter corresponding to a cumulative 50% of the particle number distribution. is there.

  In this specification, a GaN-based semiconductor is a semiconductor in which a gallium (Ga) atom is contained in a group III nitride semiconductor. Specifically, gallium nitride (GaN), indium nitride-gallium mixed crystal (InGaN), nitridation Examples thereof include an aluminum / gallium mixed crystal (AlGaN) and an indium nitride / aluminum / gallium mixed crystal (InAlGaN). Such GaN-based semiconductor particles 21 may be doped with at least one element selected from group 16 and group 14 elements such as O, S, Se, Te, Si, Ge, and Sn. , Cd, Mg, Be and Ca may be doped with at least one element selected from group 12 elements and group 2 elements.

  Furthermore, the GaN-based semiconductor particles 21 may be doped with one or more impurity elements that serve as donors and acceptors. Further, the GaN-based semiconductor particles 21 may have a structure in which p-type and n-type are mixed, or may form a pin type quantum well structure.

<Light absorber>
The light absorber 22 only has to absorb at least part of light having a wavelength of 470 nm to 800 nm, that is, light of at least a certain wavelength included in this wavelength range, and preferably absorbs at least part of light having a wavelength of 550 nm to 650 nm. To absorb. The blue light extracted from the light emitting layer 13 by cutting at least a part of the light having a wavelength of 470 nm to 800 nm included in the light emitted from the GaN-based semiconductor particles 21 and causing the color purity to be lowered. The purity of light can be increased. Furthermore, the light absorber 22 cuts at least a part of light of 550 nm to 650 nm that is a wavelength range of yellow to orange light, whereby the purity of blue light can be more reliably increased. In order to achieve higher color purity, the light absorber 22 preferably absorbs light in the entire wavelength range of wavelengths 550 nm to 650 nm, and more preferably absorbs light in the entire wavelength range of wavelengths 470 nm to 800 nm. . Moreover, in the light absorber 22, if the transmittance (transmitted light / incident light) of light having a wavelength of 550 nm to 650 nm is 0.3 or less, yellow to orange light included in light emission from the GaN-based semiconductor particles 21 is effective. Can be cut to achieve even higher color purity. Note that since the light emitting element of the present invention is intended to obtain blue light, the light absorption film 22 does not substantially absorb blue light, and even when it absorbs, the absorption rate is very low.

  The light absorber 22 is formed using a material that absorbs light in the above wavelength range. For example, cobalt, aluminum and silicon oxide bitumen pigments, aluminum and sodium silicate ultramarine, cobalt aluminate and other inorganic pigments, copper phthalocyanine and indanthrone blue and other organic pigments, gold and silver Or a semiconductor material (for example, SiC, Se, AlP, AlAs, GaP, ZnSe, ZnTe, CdS, CdSe) having a band gap near 1.7 to 2.5 eV. The light absorber 22 may contain only one kind of these materials, or may contain two or more kinds.

  In addition, since the light absorber 22 should just be the shape and magnitude | size which can be disperse | distributed in the light emitting layer 13, the shape and magnitude | size are not specifically limited. In order to obtain good dispersibility in the binder, the average particle size is desirably 1 μm or less. In addition, the average particle diameter of the light absorber 22 is a particle diameter measured by the same method as the average particle diameter of the GaN-based semiconductor particles 21 described above.

  The content of the light absorber 22 in the light emitting layer 13 is not particularly limited because it is desirable to appropriately adjust according to the type of material used for the light absorber 22, but in order to enable more effective light absorption. For example, it may be 20 to 70% by mass.

(Embodiment 2)
One structural example of the display device of the present invention will be described with reference to FIG. The display device 30 of the present embodiment is a display device using the light-emitting element of the present invention, and here is a passive matrix display device using the light-emitting element 10 (see FIG. 1) described in the first embodiment. It is.

  The display device 30 is formed by configuring the back electrode 12 and the transparent electrode 14 with a plurality of stripe electrodes in the light emitting element 10 shown in FIG. Each stripe electrode 31 constituting the back electrode 12 and each stripe electrode 32 constituting the transparent electrode 14 have a twisted position relationship, and all the stripe electrodes 31 constituting the back electrode 4 are The one projected onto the light emitting surface (the surface parallel to the light emitting layer 13) and the one projected onto the light emitting surface of all the striped electrodes 32 constituting the transparent electrode 14 cross each other (orthogonal in the present embodiment). Has been placed. In the display device 30, a voltage is applied to an electrode selected from each stripe electrode 31 of the back electrode 12 and each stripe electrode 32 of the transparent electrode 14, whereby a predetermined position (predetermined pixel) of the light emitting element. Can emit light.

  Since the display device 30 uses the light emitting element of the present invention, high luminance can be realized by low voltage driving, and full color display with high color reproducibility can be realized by RGB light emitting pixels having high color purity. Note that although a passive matrix display device is described as an example in this embodiment mode, the present invention is not limited thereto, and the display device of the present invention may be, for example, an active matrix display device.

  EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the present invention is not limited to the following examples unless it exceeds the gist of the present invention.

(Example)
In the example, a sample having the same configuration as that of the light-emitting element 10 illustrated in FIG. 1 was manufactured by the following method.
(1) First, GaN particles were produced. By reacting 0.18 g of Ga ₂ O ₃ in an ammonia atmosphere at 1000 ° C. for 3 hours, a light yellow powder was obtained. When this sample was analyzed by X-ray, it was found to be highly crystalline GaN particles (average particle diameter: 1 μm). In addition, a PL (Photo Luminescence) spectrum under irradiation with a 365 nm ultraviolet lamp showed a sharp peak at 430 nm and a weak broad peak centered at 600 nm.
(2) Next, a light emitting device as shown in FIG. 1 was produced. First, Pt was deposited to a thickness of 200 nm on a glass substrate by an electron beam evaporation method to form a back electrode 12.
(3) Subsequently, the light emitting layer 13 was formed on the back electrode 12 as follows. GaN particles prepared in (1), a binder resin (ITO paste SC-115 manufactured by Sumitomo Metal Mining Co., Ltd.), and a tetraphenylbutadiene derivative (manufactured by Takasago Inc., “P770”) as an organic hole transporting material. And cobalt aluminate particles (trade name: Cobalt Blue X (particle size 0.01 to 0.02 μm, manufactured by Toyo Pigment)) as a light absorber, and GaN particles, a binder resin, and an organic hole transport material, The light absorber was mixed at a mass ratio of 1: 0.5: 0.5: 0.1 to prepare a paste. This paste was applied onto the back electrode 12 to produce the light emitting layer 13.
(4) Subsequently, ITO was vapor-deposited on the light emitting layer 13 as a transparent electrode 14 to a thickness of 200 nm.
(5) Subsequently, the color conversion layer 15 was formed on the transparent electrode 14. SrS: Eu was deposited in the red (R) region and SrGa ₂ S ₄ : Eu was deposited in the green (G) region using a 200 nm thick mask, respectively.

  The light emitting element of this example was manufactured through the above steps (1) to (5).

  The transparent electrode 14 and the back electrode 12 of the light emitting element are connected to a DC power supply (regulated DC Power Supply (Kenwood)), and a voltage of 10 V is applied to cause the element to emit light, and an ultraviolet-visible photodiode array spectrophotometer ( The CIE chromaticity coordinates of each pixel were evaluated using Shimadzu (MultiSpec-1500). As a result, the red (R) pixel portion is (0.62, 0.31), the green (G) pixel portion is (0.24, 0.62), and the blue (B) pixel portion is (0.15,. 07).

(Comparative example)
A comparative sample was prepared in the same manner as in the example except that the light absorber was not mixed in the paste for preparing the light emitting layer. The CIE chromaticity coordinates were evaluated for this comparative sample using the same method as in the example. As a result, the R pixel portion was (0.55, 0.4), the G pixel portion was (0.35, 0.56), and the B pixel portion was (0.25, 0.2).

  When the chromaticity results of the example and the comparative example were compared, it was clearly confirmed that the color purity of each of the RGB pixels of the example was greatly improved compared to the comparative example.

  According to the light emitting element and the display device of the present invention, high luminance display can be obtained with low voltage driving, and RGB pixels with high color purity can be realized. Therefore, a full color display device with excellent color reproducibility can be provided. Therefore, the light-emitting element and the display device of the present invention are particularly useful for high-definition display devices such as televisions.

It is sectional drawing which shows an example of a structure of the light emitting element of this invention. It is a perspective view which shows one structural example of the display apparatus of this invention. It is sectional drawing which shows the example of a structure of the conventional light emitting element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Board | substrate 12 Back electrode 13 Light emitting layer 14 Transparent electrode 15a, 15b Color conversion layer 16 Black matrix 17 DC power supply 21 GaN-type semiconductor particle 22 Light absorber 30 Display apparatus 31, 32 Striped electrode

Claims (7)

A light emitting device comprising: a light emitting layer; and a pair of electrodes for injecting current into the light emitting layer,
The light emitting layer includes GaN-based semiconductor particles and a light absorber that absorbs at least part of light having a wavelength of 470 nm to 800 nm,
The light emitting device, wherein the GaN-based semiconductor particles and the light absorber are dispersed in the light emitting layer.   The light-emitting element according to claim 1, wherein the light absorber absorbs at least part of light having a wavelength of 550 nm to 650 nm.   The light-emitting element according to claim 2, wherein the light absorber absorbs light having a wavelength of 550 nm to 650 nm.   The light emitting element of Claim 3 whose transmittance | permeability of the light of wavelength 550nm -650nm in the said light absorber is 0.3 or less.   The light emitting device according to claim 1, wherein the light absorber has an average particle size of 1 μm or less.   The light emitting element of any one of Claims 1-5 further provided with the color conversion layer arrange | positioned with respect to the said light emitting layer at the light extraction side.   The display apparatus provided with the light emitting element of any one of Claims 1-6.

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