JP2009277938A - Semiconductor manufacturing device, method of manufacturing semiconductor device, and wafer-holding device - Google Patents

Abstract

A semiconductor manufacturing apparatus, a semiconductor device manufacturing method, and a wafer holding apparatus that can hold a substrate without damaging the substrate without using a complicated mechanism such as an electrostatic chuck.
A wafer holding device (100) for holding a wafer (40), a holder (10), a groove part (11) provided in the holder (10) so as to face the surface of the wafer (40), and a protrusion from the groove part (11) to the surface side of the wafer (40). And a resin material 20 fitted in the groove 11 in a state where With such a configuration, for example, the resin material 20 can be brought into contact with the surface of the wafer 40 instead of a hard material such as quartz or ceramic, and the wafer 40 can be held without being damaged. Compared to the electrostatic chuck as shown in the conventional example, since the mechanism for holding the wafer 40 is simple, the cost for capital investment can be reduced.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor manufacturing apparatus, a semiconductor device manufacturing method, and a wafer holding apparatus.

  As this type of prior art, for example, there is one disclosed in Patent Document 1. That is, Patent Document 1 describes that, for example, in a dry etching apparatus, the wafer is electrostatically chucked to the tray by connecting a DC power source between the wafer and the metal plate of the tray. With such a configuration, even when a large-diameter wafer is warped, the wafer can be fixed in close contact with the tray. Further, since the adhesion between the wafer and the tray is high, the wafer can be efficiently cooled via the tray.

Further, a back surface sputtering technique is known in which a metal thin film is sputtered on the back surface of a wafer. For backside sputtering, it is known to coat a soft polyimide layer on the stage surface of an electrostatic chuck for fixing a wafer. With such a configuration, it is possible to prevent the wafer surface (that is, the circuit forming surface) that is in direct contact with the stage from being damaged.
JP-A 63-56920

By the way, since the electrostatic chuck disclosed in Patent Document 1 has a complicated structure and is expensive, the adoption of the electrostatic chuck has a problem of causing an increase in capital investment cost.
Accordingly, the present invention has been made in view of such problems, and a semiconductor manufacturing apparatus capable of holding a substrate without damaging it without using a complicated mechanism such as an electrostatic chuck. An object of the present invention is to provide a semiconductor device manufacturing method and a wafer holding device.

[Invention 1] In order to achieve the above object, a semiconductor manufacturing apparatus according to Invention 1 is provided on the first surface of a substrate having a first surface and a second surface facing away from the first surface. A semiconductor manufacturing apparatus that contacts and holds the substrate, a base material, a groove provided on the base material so as to face the first surface, and a protrusion protruding from the groove portion to the first surface side And a resin material fitted into the groove portion in a state where Here, the substrate is, for example, a wafer. Further, the “first surface” is one of the front surface and the back surface, and the “second surface” is the other of the front surface and the back surface.
With such a configuration, for example, a resin material can be brought into contact with the first surface of the substrate instead of a hard material such as quartz or ceramic. Thereby, it is possible to hold the substrate while preventing the first surface from being damaged. Compared to the electrostatic chuck as shown in the conventional example, since the mechanism for holding the substrate is simple, the cost for capital investment can be reduced.

[Invention 2] The semiconductor manufacturing apparatus of Invention 2 is characterized in that, in the semiconductor manufacturing apparatus of Invention 1, the resin material is detachably fitted into the groove.
With such a configuration, the resin material can be easily replaced. If a polyimide layer is coated on the surface of the stage as shown in the conventional example, it takes time to replace the resin layer, but the resin material can be easily replaced with the configuration of the invention 2, so that the semiconductor manufacturing The cost for maintenance of the apparatus can be reduced.

[Invention 3] The semiconductor manufacturing apparatus of Invention 3 is the semiconductor manufacturing apparatus of Invention 1 or Invention 2, wherein the shape of the base material in plan view is a ring shape, and the groove portion is radial from the center of the base material in plan view. It is characterized by being provided so as to extend. Here, “radially” means in a plurality of directions.
With such a configuration, the resin material can be arranged to extend radially from the center of the base material, and a plurality of resin materials arranged apart from each other can be brought into contact with the first surface of the substrate. As a result, the substrate can be stably held. In addition, when the semiconductor manufacturing apparatus is disposed in a decompression chamber (for example, a load lock chamber or a process chamber), the extending direction of the resin material and the inflow / outflow direction of the gas can be substantially matched. The gas flow can be prevented from being hindered when shifting from the atmospheric pressure to the reduced pressure state (or from the reduced pressure state to the atmospheric pressure). Thereby, it can prevent that a board | substrate moves unintentionally by being pushed by gas.

[Invention 4] The semiconductor manufacturing apparatus of Invention 4 is characterized in that, in the semiconductor manufacturing apparatus of Invention 3, the resin material is fitted so as to protrude from the groove to the inside of the base material.
With such a configuration, for example, the contact area between the first surface of the substrate and the resin material can be increased while preventing the flow of gas, so that the substrate is held so as not to move further. Can do.

[Invention 5] The semiconductor manufacturing apparatus of Invention 5 is the semiconductor manufacturing apparatus of Invention 1 or Invention 2, wherein the shape of the base material in a plan view is a ring shape, and the groove portion intermittently surrounds the center of the base material. It is provided to form a curve. Here, the annular base material and the curve intermittently surrounding the center of the base material may be concentric (that is, the center is the same).
With such a configuration, the resin material can be arranged to form a curve that intermittently surrounds the center of the base material, and a plurality of resin materials arranged apart from each other are arranged on the first surface of the substrate. The substrate can be stably held.

[Invention 6] The semiconductor manufacturing apparatus of Invention 6 is the semiconductor manufacturing apparatus of Invention 1 or Invention 2, wherein the shape of the base material in plan view is a ring shape, and the shape of the groove portion in plan view is circular, and the groove portion Are provided at regular intervals along the circumferential direction of the substrate. Here, the “circle” may be a regular circle or an ellipse.
With such a configuration, the resin material can be arranged at regular intervals along the circumferential direction of the base material, and a plurality of resin materials arranged at regular intervals can be arranged on the first surface of the substrate. Since it can contact, a board | substrate can be hold | maintained stably.

[Invention 7] The semiconductor manufacturing apparatus according to Invention 7 is the semiconductor manufacturing apparatus according to any one of Inventions 1 to 6, wherein the resin material is made of a perfluoroelastomer. Here, as the “perfluoroelastomer”, there is Kalrez (registered trademark). Perfluoroelastomer has excellent chemical resistance and heat resistance, and also has elasticity equivalent to that of rubber. In particular, its heat resistance is excellent, it can maintain the same elasticity as rubber even at a high temperature near 300 ° C., and there is little degassing.
With such a configuration, excellent effects can be expected with respect to the function of holding the substrate and the function of not damaging the substrate. Moreover, since there is little degassing, for example, the vacuum exhaust in a chamber can be performed rapidly.
[Invention 8] The semiconductor manufacturing apparatus according to Invention 8 is characterized in that, in the semiconductor manufacturing apparatus according to any one of Inventions 1 to 7, the surface of the resin material is roughened.
With such a configuration, the frictional force on the surface of the resin material can be increased, so that the substrate in contact with the resin material can be held so as not to move further.

[Invention 9] In the manufacturing method of the semiconductor device of Invention 9, the substrate is brought into contact with the first surface of the substrate having a first surface and a second surface facing the opposite side of the first surface. A semiconductor manufacturing apparatus for holding a base material, a groove provided in the base material so as to face the first surface, and the groove portion protruding from the groove portion to the first surface side. A step of preparing a semiconductor manufacturing apparatus comprising: a resin material to be fitted; a step of bringing the resin material included in the semiconductor manufacturing apparatus into contact with the first surface of the substrate; and holding the substrate. And a step of performing a predetermined process on the second surface by disposing a substrate in the chamber. Here, examples of the “predetermined treatment” include sputtering of a metal thin film or dry etching of a thin film.
According to such a method, it is possible to hold the substrate while preventing the first surface from being damaged. Compared to the electrostatic chuck as shown in the conventional example, since the mechanism for holding the substrate is simple, the cost for capital investment can be reduced. Thereby, the manufacturing cost of a semiconductor device can be reduced, and as a result, it can contribute to the cost reduction of a semiconductor device.

[Invention 10] The wafer holding device of Invention 10 is a wafer holding device comprising a base material and a resin layer formed on the base material, wherein the upper end of the resin layer is more than the surface of the base material. It is located in the upper part.
With such a configuration, for example, instead of a hard material such as quartz or ceramic, the resin layer can be held in contact with the substrate so that the substrate is not damaged. Compared to the electrostatic chuck as shown in the conventional example, since the mechanism for holding the substrate is simple, the cost for capital investment can be reduced.

Embodiments of the present invention will be described below with reference to the drawings. Note that, in each drawing described below, parts having the same configuration are denoted by the same reference numerals, and redundant description thereof is omitted.
(1) First Embodiment FIGS. 1A and 1B are a plan view and a cross-sectional view showing a configuration example of a wafer holding device 100 according to a first embodiment of the present invention. 2A to 2C are a plan view, a cross-sectional view, and an enlarged cross-sectional view showing a configuration example of the holder 10. Further, FIGS. 3A and 3B are a plan view and a cross-sectional view showing a configuration example of the susceptor 30.
As shown in FIGS. 1A and 1B, the wafer holding device 100 is a device for holding a wafer 40, and includes a holder 10, a plurality of grooves formed on the surface of the holder 10, and these The plurality of resin materials 20 embedded in the groove portions and the susceptor 30 are included.

As shown in FIGS. 2A and 2B, the holder 10 has a ring shape when viewed from the top (annular, ie, the outer shape is a perfect circle, and the center of the perfect circle is a cavity. For example, quartz. A plurality of groove portions 11 are provided on the surface of the holder 10 (that is, the surface facing the wafer 40). These groove portions 11 are formed to extend radially from the center of the holder 10 toward the outer periphery in a plan view.
Moreover, as shown in FIG.2 (c), the shape (henceforth a cross-sectional shape) by sectional view of these groove parts 11 is an inverted trapezoid, for example. Alternatively, the cross-sectional shape of the groove 11 may be, for example, a round shape. Thereby, the resin material 20 can be detachably fitted in the groove 11. Moreover, the resin material 20 consists of perfluoroelastomers, for example. In this way, the plurality of groove portions 11 are formed, and the holder 10 into which the resin material 20 is fitted in each of the groove portions 11 is fixed to the susceptor by, for example, a plurality of screws 13.

As shown in FIGS. 3A and 3B, the susceptor 30 has a ring shape in plan view (that is, a shape in which the outer periphery is a perfect circle and the center of the perfect circle is a cavity). For example, it is made of stainless steel (also called SUS (sus)). The susceptor 30 is formed with a groove 31 that has the same shape as the holder 10 and is slightly larger than the holder 10. A plurality of screw holes 33 are formed in the bottom surface of the groove 31. The screws 13 (see, for example, FIG. 2) are screwed into the screw holes 33, respectively.
The wafer holding device 100 having such a configuration holds the wafer 40 and load locks the held wafer 40 in an apparatus for sputtering a metal thin film on the back surface of the wafer 40 (hereinafter referred to as a back surface sputtering apparatus), for example. Used as an apparatus for transporting from chamber to process chamber or from process chamber to load lock chamber.

  The load lock chamber is a chamber constituting the load lock chamber, and the wafer 40 is put in and out of the process chamber before and after the treatment in order to keep the inside of the process chamber in a vacuum and not open to the atmosphere. It is a vacuum chamber installed for this purpose. The process chamber is a reaction chamber in which, for example, a metal thin film is sputtered. The process chamber and the load lock chamber are partitioned by, for example, a gate valve, and when the gate valve is closed, each chamber can maintain a different degree of vacuum. Further, in the process chamber, for example, as shown in FIG. 1B, a shield plate is arranged on the outer periphery of the wafer holding device 100, and the shield plate prevents the sputter particles from entering the surface of the wafer 40. May be.

  By the way, as shown in FIGS. 1A and 1B, in the wafer holding device 100, a plurality of resin materials 20 protrude from the groove portions to the upper side (that is, the wafer 40 side). Accordingly, the wafer 40 can be held in a state of being in contact with only the soft resin material 20 without being brought into contact with the hard holder 10 made of quartz or the like. For example, when the wafer holding apparatus 100 is used in the above-described back surface sputtering apparatus, the wafer 40 is held in a state where only the plurality of resin materials 20 are in contact with the surface of the wafer 40 (that is, the circuit forming surface). be able to. Since the resin material 20 is more elastic and soft than quartz, the resin material 20 can be held without damaging the wafer 40.

Note that the amount of protrusion of the resin material 20 toward the wafer 40 (that is, the amount of protrusion from the surface of the holder 10) may be set to an arbitrary value, but the amount of sputtered particles entering the surface of the wafer 40 is as described above. There is a tendency to increase as the bulge amount increases. Here, the wraparound of the sputtered particles to the surface of the wafer 40 is not a preferable phenomenon. In the backside sputtering apparatus, it is desired to suppress spatter particles from entering the surface of the wafer 40 as much as possible. Therefore, in the present invention, it is preferable to set the amount of protrusion in the range of 0.2 mm or more and 0.7 mm or less. According to the knowledge of the present inventor, by setting the above-described protruding amount to 0.2 mm to 0.7 mm, it is possible to effectively suppress the wraparound of the sputtered particles to the surface of the wafer 40.
As described above, according to the first embodiment of the present invention, the resin material 20 can be brought into contact with the surface of the wafer 40 instead of a hard material such as quartz or ceramic. Thereby, it is possible to hold the wafer 40 while preventing the surface of the wafer 40 from being damaged. Compared to the electrostatic chuck as shown in the conventional example, since the mechanism for holding the wafer 40 is simple, the cost for capital investment can be reduced.

  Further, since the resin material 20 is arranged so as to extend radially from the center of the holder 10, a plurality of resin materials 20 arranged apart from each other can be brought into contact with the surface of the wafer 40, and the wafer 40 can be stabilized. Can be held. According to the knowledge of the present inventor, by arranging the resin material 20 to extend radially, the extremely thin wafer 40 having a diameter of 6 inches (about 15 cm) and a thickness of about 200 μm is not damaged. Can be held in. Further, when the wafer holding device 100 is used in a reduced pressure environment (for example, a load lock chamber, a process chamber, etc.), for example, as shown in FIG. The flow direction of the gas can be made substantially coincident with each other, and the gas flow can be prevented from being disturbed when the pressure is changed from the atmospheric pressure to the reduced pressure state or when the pressure is changed from the reduced pressure state to the atmospheric pressure. Thereby, it is possible to prevent the wafer 40 from being unintentionally moved by being pushed by the gas, and it is possible to prevent the surface of the wafer 40 from being rubbed and damaged by the resin material 20.

In the wafer holding device 100, since the resin material 20 is detachably fitted in the groove 11, the resin material 20 can be easily replaced. When a polyimide layer is coated on the stage surface of the electrostatic chuck as shown in the conventional example, it takes time to change the tension, but in this wafer holding device 100, the resin material 20 is detachably fitted. Therefore, the replacement is easy and the maintenance cost can be reduced.
In the wafer holding device 100, for example, perfluoroelastomer is used for the resin material 20. In the backside sputtering apparatus, every time the wafer 40 before / after processing is taken in and out of the load lock chamber, the release to the atmosphere and the evacuation are repeated. However, the perfluoroelastomer is less degassed (that is, less gas is released). Therefore, evacuation can be performed quickly.

  In the first embodiment, as described with reference to FIGS. 1A and 1B, the case where each of the resin materials 20 protrudes from the groove portion to the inside of the holder 10 has been described. However, the first embodiment of the present invention is not limited to this. For example, as shown in FIGS. 5A and 5B, the resin material 20 may not protrude from the groove portion to the inside of the holder 10. With such a configuration, the contact area between the surface of the wafer 40 and the resin material 20 is reduced as compared with FIGS. 1A and 1B, and the ability to hold the wafer 40 is reduced. It is possible to hold it so as not to damage it. Further, since the mechanism is simpler than that of the electrostatic chuck, the cost can be reduced.

(2) 2nd Embodiment In said 1st Embodiment, the some groove part was formed so that it might extend radially from the center of a holder, and the case where the resin material was engage | inserted in these groove parts was demonstrated. However, in the present invention, the shape of the groove portion in plan view (hereinafter referred to as a planar shape) is not limited to this.
6A and 6B are a plan view and a cross-sectional view showing a configuration example of the wafer holding device 200 according to the second embodiment of the present invention. As shown in FIGS. 6A and 6B, in this wafer holding device 200, the groove portion 61 is formed so as to form a curve (ie, an arc) concentric with the holder 60, for example. Thus, the center of the holder 60 is intermittently surrounded. Also in the wafer holding device 200, the resin material 20 is fitted in each of the groove portions 61, and the resin material 20 protrudes from the groove portion 61 to the upper side (that is, the wafer side). In this way, the resin material 20 is arranged so as to form a curve surrounding the center of the holder 60 intermittently or at a constant interval.

According to the second embodiment of the present invention, the resin material 20 can be brought into contact with the surface of the wafer 40 instead of a hard material such as quartz or ceramic as in the first embodiment. As shown in FIGS. 6 (a) and 6 (b), by bringing a plurality of resin materials 20 spaced apart from each other into contact with the surface of the wafer 40, the wafer 40 is stably and not damaged. Can be held. Compared to the electrostatic chuck as shown in the conventional example, since the mechanism for holding the wafer 40 is simple, the cost for capital investment can be reduced.
According to the knowledge of the present inventor, the resin material 20 is disposed so as to form a curve that intermittently surrounds the center of the holder 60, so that the diameter is 6 inches (about 15 cm) and the thickness is cut to about 400 μm. The thin wafer 40 can be held without being damaged.

(3) Third Embodiment In the first and second embodiments described above, the case where the groove is formed to form a straight line or a curve has been described. However, in the present invention, the planar shape of the groove is not limited to this.
FIGS. 7A and 7B are a plan view and a cross-sectional view showing a configuration example of the wafer holding device 300 according to the third embodiment of the present invention. As shown in FIGS. 7A and 7B, in this wafer holding device 300, the planar shape of the groove 71 is, for example, a regular circle, and such a groove 71 is constant along the circumferential direction of the holder 70. A plurality are formed at intervals. Also in the wafer holding device 300, the resin material 20 is fitted in each of the groove portions 71, and the resin material 20 protrudes from the groove portion 71 to the upper side (that is, the wafer side). In this way, the resin material 20 is arranged at regular intervals along the circumferential direction of the holder 70.

According to the third embodiment of the present invention, the resin material 20 can be brought into contact with the surface of the wafer 40 instead of a hard material such as quartz or ceramic as in the first and second embodiments. As shown in FIGS. 7A and 7B, a plurality of resin materials 20 arranged apart from each other are brought into contact with the surface of the wafer 40 so that the wafer 40 is stably and not damaged. Can be held. Compared to the electrostatic chuck as shown in the conventional example, since the mechanism for holding the wafer 40 is simple, the cost for capital investment can be reduced.
According to the knowledge of the present inventor, the resin material 20 is disposed so as to form a curve that intermittently surrounds the center of the holder 60, so that the diameter is 6 inches (about 15 cm) and the thickness is cut to about 400 μm. The thin wafer 40 can be held without being damaged.

(4) Others In the first to third embodiments, the case where a perfluoroelastomer is used as an example of the resin material 20 has been described. However, the present invention is not limited to this. For example, a fluororesin can be used as the resin material 20. In the first to third embodiments described above, even when a fluororesin is used as the resin material 20, the wafer 40 can be held stably and without being scratched.
In the present invention, it is preferable that the surface of the resin material 20 is roughened (that is, a large number of fine irregularities are formed). Examples of the roughening means include sandblasting and dry etching. By roughening the surface of the resin material 20, the frictional force (friction resistance) of the contact surface between the resin material 20 and the wafer 40 can be increased, so that the wafer 40 can be fixed so as not to move further. it can.

  Further, according to the knowledge of the present inventor, when a perfluoroelastomer is used for the resin material 20, the surface of the wafer 40 is made to have a trace of the resin material 20 (hereinafter, resin trace) by roughening the surface. It can be made not to remain. This will be described in detail. The inventor has a perfluoroelastomer having a smooth surface (hereinafter referred to as sample 1) and a perfluoroelastomer having a roughened surface (hereinafter referred to as sample 2). Were brought into contact with the surface of the wafer in a high temperature environment of about 300 ° C. Then, as shown in FIG. 8, the resin trace may remain on the surface of the wafer in contact with the sample 1. Further, the wafer contacted with Sample 2 had no resin marks on its surface.

9 (a) and 9 (b) are the results of analysis by EDX (energy dispersive X-ray analyzer), FIG. 9 (a) is the result of analyzing resin traces on the wafer surface, and FIG. It is the result of analyzing the area | region (namely, there is no resin trace) in which the resin trace on the wafer surface is not left. 9A and 9B, the horizontal axis indicates the energy value (keV) indicating the type of element, and the vertical axis indicates the count number (number of molecules that have entered the detector at a certain time).
As shown in FIG. 9A, when the resin marks on the wafer surface were analyzed, carbon (C) element and fluorine (F) element were detected. On the other hand, as shown in FIG. 9B, when no resin trace was analyzed, although the C element was slightly detected, the detection intensity (that is, the amount) was sufficiently smaller than the resin trace. Moreover, F element was not detected without the resin trace. From such a result, it is considered that the resin mark as shown in FIG. 8 contains C element and F element.

  The influence of such C element and F element (that is, resin marks) on the characteristics of the semiconductor device varies depending on the type of the semiconductor device. Therefore, it is difficult to determine whether it is good or bad. . However, in the type of semiconductor device whose electrical characteristics fluctuate due to the presence of resin traces, it is naturally better not to have resin traces. It is preferable to roughen the surface. As a result, the possibility of resin marks remaining on the surface of the wafer is reduced, so that the possibility of fluctuations in electrical characteristics is also reduced.

  In the first to third embodiments, the case where the wafer holding devices 100, 200, and 300 are used in a backside sputtering device including a decompression chamber such as a load lock chamber or a process chamber has been described. However, the wafer holding devices 100, 200, and 300 can be used for apparatuses other than the back surface sputtering apparatus. For example, the wafer holding devices 100, 200, and 300 can be used in a (surface) sputtering device that forms a metal thin film on the surface of the wafer 40 and a dry etching device that etches a thin film formed on the surface of the wafer 40. It is. When used in such an apparatus, for example, in FIG. 1B, the back surface of the wafer 40 may be brought into contact with the resin material 20 of the wafer holding apparatus 100. Thus, the wafer 40 can be held in the decompression chamber so as not to be damaged, and a predetermined treatment can be performed on the surface of the held wafer 40.

The figure which shows the structural example of the wafer holding | maintenance apparatus 100 which concerns on 1st Embodiment. The figure which shows the structural example of the holder. The figure which shows the structural example of the susceptor 30. FIG. The figure which shows notionally the extending direction of the resin material 20, and the inflow / outflow direction of gas. The figure which shows the other structural example of the wafer holding | maintenance apparatus 100. FIG. The figure shows an example of composition of wafer holding device 200 concerning a 2nd embodiment. The figure shows an example of composition of wafer holding device 300 concerning a 3rd embodiment. FIG. 3 is a photograph of resin marks left on Sample 1. The figure which shows the analysis result by EDX.

Explanation of symbols

  10, 60, 70 Holder (an example of the “substrate” of the present invention), 11, 61, 71 Groove (an example of the “groove” of the present invention), 13 Screw, 20 Resin material (the “resin material” of the present invention) Example of “resin layer”, 30 susceptor, 31 groove, 33 screw hole, 40 wafer (example of “substrate” of the present invention), 50 shield plate, 100, 200, 300 wafer holding device (“semiconductor manufacturing of the present invention” Example of “apparatus”)

Claims (10)

A semiconductor manufacturing apparatus that holds the substrate in contact with the first surface of the substrate having a first surface and a second surface facing away from the first surface,
A substrate;
A groove provided in the base so as to face the first surface;
And a resin material fitted into the groove in a state of protruding from the groove toward the first surface.   The semiconductor manufacturing apparatus according to claim 1, wherein the resin material is detachably fitted into the groove. The shape of the base material in plan view is a ring shape,
The semiconductor manufacturing apparatus according to claim 1, wherein the groove portion is provided so as to extend radially from the center of the base material in a plan view.   The semiconductor manufacturing apparatus according to claim 3, wherein the resin material is fitted so as to protrude from the groove to the inside of the base material. The shape of the base material in plan view is a ring shape,
The semiconductor manufacturing apparatus according to claim 1, wherein the groove portion is provided so as to form a curve that intermittently surrounds the center of the base material. The shape of the base material in plan view is a ring shape,
3. The semiconductor according to claim 1, wherein a shape of the groove portion in a plan view is a circle, and a plurality of the groove portions are provided at regular intervals along a circumferential direction of the base material. Manufacturing equipment.   The said resin material consists of perfluoroelastomers, The semiconductor manufacturing apparatus as described in any one of Claims 1-6 characterized by the above-mentioned.   The surface of the said resin material is roughened, The semiconductor manufacturing apparatus as described in any one of Claims 1-7 characterized by the above-mentioned. A semiconductor manufacturing apparatus for holding a substrate in contact with the first surface of a substrate having a first surface and a second surface facing away from the first surface, the base material, A semiconductor manufacturing apparatus is provided, comprising: a groove provided on the base so as to face the first surface; and a resin material fitted into the groove in a state of protruding from the groove toward the first surface. Process,
Bringing the resin material provided in the semiconductor manufacturing apparatus into contact with the first surface of the substrate and holding the substrate;
Placing the held substrate in a chamber and subjecting the second surface to a predetermined treatment. A method for manufacturing a semiconductor device, comprising: A substrate;
A wafer holding device comprising a resin layer formed on the substrate,
The wafer holding device, wherein an upper end of the resin layer is located above the surface of the substrate.

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