JP2009226660A - Method for patterning by dry etching, mold used for it and method for manufacturing inkjet head - Google Patents

Abstract

The present invention provides a patterning method by dry etching that can easily form a mask having a tapered side surface on a member to be etched having a cavity and perform good patterning, a mold used therefor, and a method for manufacturing an inkjet head. .
A photocurable resin is applied to a surface of a member to be etched 10 having a cavity 13 on which dry etching is performed, and has a pattern corresponding to a mask 24a having a tapered side surface to be formed on the member to be etched. The mold 50 is pressed against the photocurable resin. After the photocurable resin is cured by irradiating light, the mold is pulled away to form a mask having a tapered side surface reflecting the mold pattern on the member to be etched. After patterning the member to be etched by performing dry etching through the mask, the mask is removed.
[Selection] Figure 1

Description

  The present invention relates to a patterning method by dry etching, a mold used therefor, and an ink jet head manufacturing method.

In order to pattern a piezoelectric body or the like by dry etching, an etching mask is required. As such an etching mask, a hard mask such as an oxide film or metal, or a mask obtained by patterning a resist on the surface to be etched is used.
For example, when processing hard materials that are difficult to process by etching (hard etching materials), such as FeRAM, piezoelectric elements, piezoelectric films used in inkjet heads and noble metals used for the electrodes, hard masks such as metals There is a method of performing patterning (individualization) using a dry etching method. However, when dry etching is performed using a hard mask, the number of processes is increased, so that it is desirable to use a resist as a mask from the viewpoint of cost reduction.

  Patterning a resist on the surface to be etched and using it as a mask is useful because it simplifies the process. In this case, dry etching is performed at a low temperature, while difficult etching such as a noble metal used for the piezoelectric film and its electrode is performed. Since the material has a high boiling point of reaction products generated during etching and is non-volatile, if the shape of the side surface of the resist pattern constituting the mask is nearly perpendicular to the substrate surface, the non-volatile reaction products are masked. Easy to adhere to the side.

  In order to prevent such reaction products from adhering to the side surfaces of the mask, countermeasures are taken by devising photolithographic conditions. For example, there is a method of making the resist mask side surface tapered (proxy exposure condition control, defocusing, post-bake temperature control, etc.), but it is difficult to achieve both tapered formation and plasma resistance.

  In the manufacturing of ferroelectric capacitors, as a countermeasure against etching damage to the ferroelectric film, after forming a tapered resist mask by UV irradiation and resist reflow by post-baking, the ferroelectric film and the conductor It has been proposed to process these films into a tapered shape by collectively etching the films (see Patent Document 1).

JP 2006-303188 A

  When the patterned resist mask is reflowed to have a tapered shape, the resist is fluidized because heat treatment is performed at a high temperature. In particular, when the film thickness of a dielectric film or the like to be patterned is thick, it is necessary to sufficiently increase the film thickness of the resist film, and the size shift due to the heat treatment becomes large. Further, as shown in FIGS. 6A and 6B and FIGS. 7A and 7B, the size shift size (width) varies depending on the pattern size of the masks 62 and 64 formed on the substrate 60. It is difficult to make the shape of the ferroelectric film after etching uniform. Further, it is necessary to control the taper angle in consideration of the fluidity of the resist. In order to obtain a desired taper angle, a high temperature control is required. In addition, since the surface state varies depending on the substrate to be processed, the reproducibility of the size shift and taper angle generated by the fluidization of the resist is poor, and patterning variation tends to occur.

  The present invention provides a patterning method by dry etching that can easily form a mask having a tapered side surface on a member to be etched having a cavity and can perform good patterning, a mold used therefor, and a method for manufacturing an inkjet head. The purpose is to do.

  In order to achieve the above object, the present invention provides the following patterning method by dry etching, mold, and inkjet head manufacturing method.

<1> a step of applying a photocurable resin to a surface to be dry-etched of a member to be etched having a cavity;
A step of forming a mask made of the photocurable resin by transferring a pattern of a mold having a tapered side surface to the photocurable resin applied on the member to be etched;
Patterning the member to be etched by performing dry etching through the mask;
A patterning method by dry etching, comprising:

<2> a step of applying a photocurable resin to a surface to be dry-etched of the member to be etched having a cavity;
Preparing a mold having a pattern corresponding to a mask having a tapered side surface to be formed on the member to be etched, and pressing the surface having the pattern of the mold against the photocurable resin;
A mask having a taper-shaped side surface in which the pattern of the mold is reflected on the member to be etched by irradiating light to the photo-curable resin that has pressed the mold and curing it, and then separating the mold. Forming, and
Patterning the member to be etched by performing dry etching through the mask;
Removing the mask after the dry etching;
A patterning method by dry etching, comprising:

<3> The dry etching patterning according to <1> or <2>, wherein the member to be etched has a layer containing at least one of a magnetic material, a ferroelectric material, and a noble metal. Method.

<4> The patterning method by dry etching according to any one of <1> to <3>, wherein a ventilation groove or hole is formed in the pattern surface of the mold.

<5> After the mask is formed on the member to be etched, before the dry etching is performed through the mask, the thin film of the photocurable resin remaining on the portion other than the mask on the member to be etched is formed. The patterning method by dry etching according to any one of <1> to <4>, further comprising a removing step.

<6> The method further includes a step of heat-treating the mask after forming the mask on the member to be etched and before performing dry etching through the mask <1> to <5> A patterning method by dry etching according to any one of the above.

<7> A mold used for forming a mask of a photocurable resin on the member to be etched when patterning the member to be etched by dry etching,
A mold having light transmittance and a pattern corresponding to a mask having a tapered side surface to be formed on the member to be etched.

<8> The mold according to <7>, wherein a groove or hole for ventilation is formed on the surface of the pattern.
<9> A method for producing an inkjet head, wherein the patterning method according to any one of <1> to <6> is used.

  ADVANTAGE OF THE INVENTION According to this invention, the patterning method by dry etching which can form a mask which has a taper-shaped side surface on the to-be-etched member which has a cavity, and can perform favorable patterning, the mold used therefor, and the manufacturing method of an inkjet head Is provided.

The present invention will be described below with reference to the accompanying drawings.
As a mask for dry etching, the present inventor has not a post-bake temperature control but a mask having a tapered side surface by an imprint method using a mold (hereinafter sometimes referred to as a “tapered mask”). The method of forming was studied repeatedly.
In general, the imprint method includes a thermal imprint method, an optical imprint method, and a soft imprint method.
When a mask is formed by transferring a mold pattern to a resin by a thermal imprint method, it is necessary to heat the resin to a temperature higher than the melting point of the resin, which can easily cause damage to the substrate, resulting in deterioration of device performance or failure. There is a fear.

Furthermore, in the case of the thermal imprint method, it is necessary to press the mold against the substrate at a considerably high pressure simultaneously with the heating. In particular, when a device having a structure such as MEMS (Micro Electro Mechanical Systems) is manufactured, it is necessary to form a mask pattern on the structure having a cavity such as a flow path such as an inkjet head. Therefore, when a high pressure is applied, the structure may be destroyed, and it is difficult to apply the thermal imprint method.
Also, although there is a room temperature imprint method, the transfer pressure becomes as high as 10 to 40 MPa, so that it is difficult to apply to a device having a structure such as MEMS.

  On the other hand, in the photoimprint method, since the photosensitive resin is cured by UV irradiation, heating is not necessarily required and almost no pressure is required. In addition, the photocurable resin generally has a high melting point and does not melt (fluidize) if heated to a certain temperature. As described above, according to the optical imprint method, almost no heating or pressurization is required, and the present inventor has a taper when performing patterning by dry etching particularly in manufacturing a device including a structure having a cavity such as an inkjet nozzle. The inventors have found that a mask having a shape side surface can be formed advantageously, and have completed the present invention.

  That is, the present invention provides a step of applying a photocurable resin to a surface to be etched of a member to be etched having a cavity, and a mold having a tapered side surface on the photocurable resin provided on the member to be etched. A step of forming a mask made of the photo-curable resin by transferring the pattern, and a step of patterning the member to be etched by performing dry etching through the mask. This makes it possible to easily form a mask having a tapered side surface without damaging even a member having a cavity such as an ink jet nozzle and being susceptible to impact, and performing dry etching through the tapered mask. As a result, adhesion of the reactive product to the side surface of the mask is suppressed, and good patterning can be performed.

FIG. 1 shows an example of a patterning method by dry etching according to the present invention.
First, a member (member to be etched) that performs dry etching and performs patterning is prepared. For example, the member to be etched 10 having a cavity as shown in FIG. 2 can be used. In this member to be etched 10, an insulating film 14, an adhesion layer 16 such as Ti, and a noble metal film 18 corresponding to a lower electrode are sequentially formed on a silicon substrate 12 having a cavity (hole) 13. Further, after the piezoelectric film 20 is formed on the lower electrode 18, a noble metal film 22 corresponding to the upper electrode is formed. The upper electrode 22 is patterned. As the insulating film 14, for example, a silicon oxide film (SiO ₂ ) is formed by a sputtering method, a CVD method, a thermal oxidation method, or the like. The lower electrode 18 and the upper electrode 22 may be made of Pt, Ir, Ru, or oxides thereof, and are formed by a sputtering method, a CVD method, or the like. The piezoelectric film 20 may be made of PZT or the like, and may be formed by sputtering, CVD, or the like.

  Note that the member to be etched used in the present invention is not limited to the above-described configuration and material, but at least one of materials that are difficult to process by dry etching (hard etching material), for example, a magnetic material, a ferroelectric material, and a noble metal. A member having a film to be contained can be suitably used. Specifically, members including the following difficult-to-etch materials can be used, but are not limited thereto.

Magnetic (magnetic disk, MRAM, etc.): Fe, Co, Mn, Ni , etc. noble metal (various electrodes such _{as): Pt, Ru, RuO 2} , Ir, IrO 2, Au and high dielectric (DRAM capacitor): BST :( Ba, Sr) TiO ₃ , SRO: SrTiO ₃ , BTO: BaTiO ₃ , ZnO, ZrO ₂ , HfO ₂
Ferroelectric (FeRAM, actuator, etc.): PZT: Pb (Zr, Ti) O ₃ , PZTN: Pb (Zr, Ti) Nb ₂ O ₈ , PLZT: (Pb, La) (Zr, Ti) O ₃

<Applying photocurable resin>
A photo-curing resin 24 is applied to the surface of the member to be etched 10 having the cavity 13 as shown in FIG. 2 (hereinafter, simply referred to as “substrate”) to be dry-etched (FIG. 1A). .
As the photocurable resin 24, for example, PAK-01 manufactured by Toyo Gosei Co., Ltd. can be used, and a negative resist such as SU-8 manufactured by Kayaku Microchem Corporation may be used. A photocurable resin is applied on the substrate 10 by a spin coat method, a spray coat method, or the like, and an uncured photocurable resin layer 24 is provided. The thickness of the photocurable resin layer 24 is, for example, 0.1 to 20 μm.

<Mold pressing>
Next, a mold 50 having a pattern corresponding to the mask 24 a having a tapered side surface to be formed on the member to be etched 10 is prepared, and the surface (pattern surface) having the pattern of the mold 50 is set as the photocurable resin 24. (FIG. 1B).

FIG. 3 schematically shows the mold 50. The mold 50 has a concavo-convex pattern 52 corresponding to the mask 24a having a tapered side surface to be formed on the substrate 10, and the side surface of the convex portion 54 is inclined at a desired angle.
Since the concavo-convex pattern 52 of the mold 50 is reflected in the shape of the mask 24a, the pattern 52 of the mold 50 is patterned so that the side surface of the mask 24a has a tapered shape in the portion where dry etching is performed. What is necessary is just to design suitably according to the position, shape, etc. which should be performed. It should be noted that the mold 50 can be easily peeled off from the cured resin, and it is possible to effectively prevent reactive organisms due to dry etching from adhering to the side surface of the tapered mask 24a formed by reflecting the pattern 52. From the viewpoint, as shown in FIG. 3, the taper-shaped angle of the convex portion 54 of the mold 50 is preferably 65 ° to 80 °, and more preferably 70 to 75 °.

Further, the mold 50 may have a ventilation groove or hole formed in the pattern surface. When the mold 50 is pressed against the photocurable resin 24 applied on the substrate 10, air may be involved and bubbles may enter between the mold 50 and the substrate 10 (in the resin). If the photocurable resin 24 is cured with air bubbles mixed in, the mask shape may be defective and patterning by dry etching may be affected. Therefore, for example, as shown in FIG. 4A, air bubbles can be escaped by providing ventilation grooves 56a and holes on the bottom surface of the recess of the mold 50A. The number and shape of ventilation grooves and holes are not particularly limited. For example, two or more ventilation grooves 56b may be provided as in a mold 50B shown in FIG. 4B.
If the photocurable resin 24 enters and hardens the grooves 56a and 56b and the holes provided in the mold 50, a convex protrusion corresponding to the shape of the grooves 56a and 56b and the holes of the mold 50 is formed on the upper surface of the mask 24a. However, there is almost no influence on the dry etching of the PZT film or the like.

  The mold 50 can be preferably manufactured by dry etching using a transparent substrate having light transmittance (UV transmittance) such as quartz or sapphire. For example, when the mold 50 is manufactured using a quartz substrate, it is processed by adjusting the etching conditions so that a pattern (taper cross section) 52 corresponding to the tapered mask 24a to be formed on the member to be etched 10 is obtained. That's fine.

Specifically, a quartz mold can be formed by the following method.
First, a metal film serving as a quartz etching mask is formed on a quartz substrate. The metal film may be formed of Ni, Ti, Cr, Ta, Al or the like by sputtering, CVD, or vacuum deposition, and the film thickness may be determined from the depth of quartz etching, etching conditions, and the like.
In order to pattern the metal film, a resist is formed on the metal film. For the resist, OFPR, TSMR series manufactured by Tokyo Ohka Kogyo Co., Ltd., or 1500 series manufactured by AZ Corporation may be formed by spin coating or spray coating, and the film thickness may be determined from the thickness of the metal film, etching conditions, or the like. For example, it forms so that it may become about 0.1-20 micrometers. Next, soft baking is performed. Soft baking is performed using a heating device such as a hot plate or an oven at an appropriate temperature (for example, 60 to 150 ° C. for 1 to 15 minutes) according to the resist material.

  Next, exposure is performed. The exposure is performed through a photomask using an aligner or a stepper so that the developed resist mask remains in a shape corresponding to the pattern shape of the metal film after the metal film dry etching. What is necessary is just to perform by the exposure amount according to a resist material.

Development is performed after exposure. Depending on the resist used, post-exposure bake (PEB) may be performed before development. By performing PEB after exposure and before development, it is possible to compensate for the shortage of exposure amount and to reduce deformation of the pattern shape due to the influence of standing waves during exposure.
In the development, the exposed substrate is immersed in a developer, rinsed with pure water, and then the substrate is dried. For example, the substrate after exposure is immersed in an alkaline developer such as NMD-3 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) for about 60 seconds, then rinsed with pure water for 60 seconds twice, and then attached to the substrate with a spin dryer or the like. Remove the moisture.

  After the resist patterning, post baking is performed. For example, the substrate is heated using a heating device such as a hot plate or an oven. Resist post-baking removes the remaining developer and rinse solution by evaporation, and further cures the resist to improve plasma resistance during dry etching and improve adhesion to the substrate. What is necessary is just to set the temperature and time of post-baking according to a resist material, and it is normally performed for about 1 to 60 minutes at about 100-200 degreeC with a hotplate or oven. Note that UV curing may be performed instead of post baking.

Next, dry etching of the metal film is performed through a resist mask. For example, it is dried by each etching apparatus such as inductively coupled plasma (ICP), electron cyclotron resonance plasma (ECP), helicon wave plasma (HWP), and magnetic field enhanced ICP. Etching can be performed. As an etching gas, a mixed gas such as Cl ₂ , BCl ₃ , HBr, SF ₆ , CF ₄ , CHF ₃ , C ₄ F ₈ , an inert gas such as Ar, N ₂ , or oxygen may be used.

Next, dry etching of quartz is performed using a metal film patterned by dry etching as a mask. For example, it is dried by each etching apparatus such as inductively coupled plasma (ICP), electron cyclotron resonance plasma (ECP), helicon wave plasma (HWP), and magnetic field enhanced ICP. Etching can be performed. Etching gas includes SF ₆ , CF ₄ , CHF ₃ , C ₄ F ₈ , C ₂ F ₆ , C ₃ F ₆ , C ₃ F ₈ , C ₄ F ₆ , C ₅ F ₈ , Ar which is an inert gas. A mixed gas such as N ₂ , oxygen, or the like may be used, and a tapered cross section may be obtained depending on etching conditions.

  By pressing the pattern surface of the mold 50 against the photocurable resin 24, the pattern 52 of the mold 50 is transferred to the photocurable resin 24 on the substrate 10. When pressing the mold 50, you may pressurize (for example, about 0.5 MPa or less) as needed. However, if a high pressure is applied to the member to be etched 10 in which the cavity 13 such as the flow path is formed, there is a risk of damage. In order to prevent such damage, the applied pressure may be adjusted according to the structure of the member to be etched 10.

  Moreover, it is preferable that the pattern surface of the mold 50 is subjected to water repellent treatment. Water repellent treatment by applying a fluorine or silicone water repellent (release agent) such as fluoroalkyl silane, optool, etc. by a known coating method such as spin coating, dip coating, vapor deposition or CVD. By doing so, the peelability of the mold 50 after the resin is cured can be improved.

<Light irradiation and mold separation>
Next, the photocurable resin 24 pressed against the mold 50 is irradiated with light and cured, and then the mold 50 is pulled apart (FIGS. 1C and 1D).
Here, light is irradiated from the mold 50 side so that the photocurable resin 24 between the substrate 10 and the mold 50 is cured. What is necessary is just to select the wavelength and irradiation amount of the light to irradiate according to the resin 24, for example, the resin 24 is hardened by irradiating UV light with a wavelength of 300-400 nm. After curing, the mold 50 is pulled away to form a tapered mask 24a on which the pattern 52 of the mold 50 is reflected (transferred) on the member 10 to be etched.

  In this way, by forming the mask 24a having a tapered side surface by the optical imprint method, occurrence of sagging and size shift due to fluidization of the resist mask during post-baking as in the conventional case is suppressed, and sagging of the cross section ( (Spread) is suppressed. Further, since the mask 24a can be formed without performing high-temperature heating or high-pressure pressurization, even the member to be etched 10 having the cavity 13 can be prevented from being damaged.

  In addition, when using a negative resist etc. as photocurable resin, you may heat-process at 100-200 degreeC before separating the mold 50. FIG. If the mold 50 is heated while being superimposed on the substrate 10, the resist mask 24a can be further cured, and deformation of the resist mask 24a due to heating can be suppressed.

<Removal of residual film>
After the mask 24a is formed on the member 10 to be etched, the thin film (residual film) 23 of the photocurable resin remaining on the portion other than the mask 24a on the member 10 to be etched is removed as necessary (FIG. 1E )).
When the mask is formed, a resin thin film (residual film) 23 is formed between the convex portion 54 of the mold 50 and the substrate 10, and if the dry etching is performed with the thin film 23 remaining, the residual film 23 hinders etching. The patterning may be affected. Therefore, it is preferable to perform patterning after removing the remaining film 23 in the portion to be dry etched. As a method for removing the remaining film 23, for example, plasma processing (for example, oxygen plasma processing) using O ₂ , CF ₄ , CHF ₃ or the like may be performed.

<Heat treatment>
In addition, after the mask 24a is formed on the member to be etched 10, before the dry etching is performed through the mask 24a, the mask 24a may be heat-treated as necessary (FIG. 1F).
By performing the heat treatment, the crosslinking of the resin constituting the mask 24a is promoted, and the plasma resistance can be improved. However, if the heat treatment is performed at a higher temperature than necessary, the resist may flow, the taper shape of the mask 24a may collapse, or a size shift may occur. Heat treatment may be performed at a temperature suitable for the resin material constituting the mask 24a so that such a large collapse of the mask shape and size shift are suppressed.

<Dry etching>
Next, the member to be etched 10 (PZT film 20) is patterned by performing dry etching through the mask 24a (FIG. 1G).
The dry etching method may be selected according to the material to be patterned by etching, for example, inductively coupled plasma (ICP), electron cyclotron resonance plasma (ECP), helicon wave excited plasma. Dry etching can be performed by each etching apparatus such as (HWP: Helicon Wave Plasma) and magnetic field enhanced ICP.

For example, plasma etching can be performed by an apparatus 30 including an antenna 32, a dielectric window 34, and the like as shown in FIG. For example, a mixed gas of chlorine and argon is introduced into the chamber 36 as a process gas. As the process gas, BCl ₃ , HBr, SF ₆ , CF ₄ , CHF ₃ , C ₄ F ₈ may be used instead of chlorine, and oxygen, nitrogen, or the like may be added. Further, a plurality of gases such as a mixed gas of chlorine, C ₄ F ₈ , Ar, and oxygen may be used. Etching is performed by applying RF to the antenna 32 to generate plasma, and applying bias RF to the stage 38. For example, 13.56 MHz is used for the RF power source 40 for the antenna 32, and a low frequency band is used for the RF power source 42 for bias. The RF frequency for the antenna 32 may be 13.56 to 60 MHz. As the low frequency power source, 350 kHz to 2 MHz may be used. Typical etching conditions are as follows.

  As the process gas, a mixed gas of 10% to 60% chlorine and 40% to 90% argon is used. For example, the flow rate of chlorine may be 20 sccm and the argon may be 80 sccm. The pressure of the process gas may be 0.1 to 5 Pa, for example, 1.0 Pa. The antenna RF power is set to 350 to 1000 W, for example, 500 W. The substrate bias power is 50 to 500 W, for example 150 W. The temperature of the stage 38 may be -20 to 150 ° C, for example, 5 ° C.

  When performing dry etching in this way, the resist mask 24a formed on the substrate 10 is kept in a tapered shape with a moderately inclined side surface, so that the adhesion of reactive products during dry etching is suppressed. At the same time, since the position and size of the mask 24a are close to the design values, the piezoelectric film 20 can be satisfactorily patterned.

<Removal of mask>
After the dry etching, the mask 24a is removed (FIG. 1H).
For example, the resist mask 24a is stripped using a stripping solution such as a stripping solution 502A manufactured by Tokyo Ohka Kogyo Co., Ltd. or an AZ remover 100 manufactured by AZ. Alternatively, the resist mask 24a may be removed by ashing with oxygen plasma or the like. In an ashing process using oxygen plasma, an ICP, a microwave asher, or a barrel asher may be used. The ashing process may be performed by, for example, microwave-excited surface wave plasma (SWP: Surface Wave Plasma) using a microwave at 200 sccm, 30 Pa, and a microwave output of 1 kW.

Through the steps described above, the piezoelectric device 28 having the piezoelectric film 20a patterned into a good shape by dry etching is obtained without destroying the cavity 13 of the member 10 to be etched.
In the present invention, since a member containing a difficult-to-etch material such as a piezoelectric body can be patterned with high accuracy, the present invention can be advantageously applied particularly when an inkjet head such as a piezo method is manufactured.

  As mentioned above, although this invention was demonstrated, this invention is not limited to the said embodiment. For example, the member that performs patterning by dry etching is not limited to the exemplified difficult-to-etch material, and can be selected as appropriate. Further, the photo-curable resin for forming the mask is not limited to those exemplified, and may be appropriately selected.

It is the schematic which shows an example of the patterning method by the dry etching which concerns on this invention. It is the schematic which shows an example of a structure of a to-be-etched member. It is the schematic which shows an example of a mold. It is the schematic which shows the example of the mold which provided the groove | channel for ventilation | gas_flowing. (A) Mold with one groove (2) Mold with two grooves It is a schematic block diagram which shows an example of a dry etching apparatus. It is the schematic which shows the size shift when the width | variety of a mask is large. (A) Before baking (B) After baking It is the schematic which shows the size shift when the width | variety of a mask is small. (A) Before baking (B) After baking

Explanation of symbols

10 Member to be etched 12 Silicon substrate 13 Insulating film 16 Adhesion layer 18 Lower electrode 20 Piezoelectric film 20a Piezoelectric film (after patterning)
22 Upper electrode 24 Photo-curable resin layer 24a Resist mask 50 Mold 52 Pattern 54 Protrusions 56a and 56b Grooves for ventilation

Claims (9)

A step of applying a photocurable resin to the surface to be dry-etched of the member to be etched having a cavity;
A step of forming a mask made of the photocurable resin by transferring a pattern of a mold having a tapered side surface to the photocurable resin applied on the member to be etched;
Patterning the member to be etched by performing dry etching through the mask;
A patterning method by dry etching, comprising: A step of applying a photocurable resin to the surface to be dry-etched of the member to be etched having a cavity;
Preparing a mold having a pattern corresponding to a mask having a tapered side surface to be formed on the member to be etched, and pressing the surface having the pattern of the mold against the photocurable resin;
A mask having a taper-shaped side surface in which the pattern of the mold is reflected on the member to be etched by irradiating light to the photo-curable resin that has pressed the mold and curing it, and then separating the mold. Forming, and
Patterning the member to be etched by performing dry etching through the mask;
Removing the mask after the dry etching;
A patterning method by dry etching, comprising:   The patterning method by dry etching according to claim 1, wherein the member to be etched has a layer containing at least one of a magnetic material, a ferroelectric material, and a noble metal.   The patterning method by dry etching according to any one of claims 1 to 3, wherein grooves or holes for ventilation are formed in a pattern surface of the mold.   After forming the mask on the member to be etched and before performing dry etching through the mask, removing the thin film of the photocurable resin remaining on the portion other than the mask on the member to be etched The patterning method by dry etching according to any one of claims 1 to 4, further comprising:   6. The method according to claim 1, further comprising a step of heat-treating the mask after forming the mask on the member to be etched and before performing dry etching through the mask. The patterning method by dry etching according to one item. A mold used for forming a mask of a photocurable resin on the member to be etched when patterning the member to be etched by dry etching,
A mold having light transmittance and a pattern corresponding to a mask having a tapered side surface to be formed on the member to be etched.   The mold according to claim 7, wherein a ventilation groove or hole is formed in the pattern surface.   A method for manufacturing an inkjet head, wherein the patterning method according to any one of claims 1 to 6 is used.

Images