JP2010145454A - Electro-optic device and electronic equipment - Google Patents

Abstract

An electro-optical device in which even when a common potential is applied to a dummy pixel electrode formed in a non-display area, a change in the common potential does not affect a high-speed signal line for a drive circuit such as a video signal line, and the like An object of the present invention is to provide an electronic apparatus including an electro-optical device.
In the electro-optical device 100, a non-display area 10b of an element substrate 10 has a dummy pixel electrode 9b to which the same potential as a common electrode 21 is applied, and a video that overlaps the dummy pixel electrode 9b in a planar manner on the lower layer side. The signal line 75 is formed, but the video signal line 75 and the dummy pixel electrode 9 are formed.
Between b, a shield electrode 6c to which a ground potential is applied is interposed. For this reason,
Even when the common potential LCCOM changes such as the polarity of the common potential LCCOM applied to the pixel electrode 9a and the dummy pixel electrode 9b is reversed, the change in the common potential LCCOM does not affect the video signal line 75.
[Selection] Figure 3

Description

The present invention relates to an electro-optical device in which a liquid crystal layer is held between an element substrate and a counter substrate that are arranged to face each other, and an electronic apparatus including the electro-optical device.

Electro-optical devices such as liquid crystal devices are widely adopted as display devices for light valves of projection display devices and mobile phones. Such an electro-optical device is surrounded by an element substrate provided with a pixel electrode, a counter substrate provided with a common electrode facing the pixel electrode, a sealing material for bonding the counter substrate and the element substrate, and a sealing material. A liquid crystal layer held by the element substrate and the counter substrate is included in the region.

Among such electro-optical devices, in the reflective liquid crystal device, the pixel electrode is configured as a reflective pixel electrode. For this reason, in the case of a reflective liquid crystal device, an insulating film is formed so as to cover the pixel electrode, and then the surface of the insulating film and the pixel electrode is polished for the purpose of preventing disordered liquid crystal alignment and optical scattering. And the structure which made the surface of a pixel electrode and the area | region pinched | interposed by the adjacent pixel electrode into the continuous flat surface is employ | adopted.

When performing such flattening, a dummy pixel electrode that does not directly contribute to display is formed so as to surround the image display area on the outer periphery side, and a step is generated between the image display area and the non-display area outside the image display area. It has been proposed to prevent this (see Patent Document 1).

When such a configuration is adopted, if the same potential as the common electrode is supplied to the dummy pixel electrode,
Since the alignment state of the liquid crystal located in the non-display area can be controlled by the dummy pixel electrode, light leakage from the non-display area can be prevented.
JP 2006-267937 A

However, when a high-speed signal line for a drive circuit such as a video signal line passes through a region that overlaps the dummy pixel electrode in a plane, adopting an inversion drive method that inverts the polarity of the common potential applied to the common electrode, There is a problem that the potential change of the dummy pixel electrode deteriorates the signal waveform supplied to the high-speed signal line for the drive circuit.

In view of the above problems, the problem of the present invention is that even when a common potential is applied to a dummy pixel electrode formed in a non-display area, a change in the common potential affects a high-speed signal line for a drive circuit such as a video signal line. It is an object of the present invention to provide an electro-optical device that does not affect the electro-optical device and an electronic apparatus including the electro-optical device.

In order to solve the above problems, an electro-optical device according to the present invention includes an element substrate provided with a pixel electrode, a counter substrate disposed opposite to the element substrate, and the counter substrate and the element substrate bonded together. A sealing material, a liquid crystal layer held by the element substrate and the counter substrate in a region surrounded by the sealing material, and a common electrode provided on the element substrate or the counter substrate, An electro-optical device in which a potential applied to a common electrode changes for each set period, and in the non-display area on the outer peripheral side of the image display area in which a plurality of the pixel electrodes are arranged on the element substrate, A dummy pixel electrode formed of the same conductive film and applied with the same potential as the common electrode, and a high-speed signal line for a drive circuit provided on a lower layer side than the dummy pixel electrode,
Provided to overlap at least on the upper layer side with respect to the high-speed signal line for the drive circuit,
And a shield electrode to which a constant potential is applied.

In the electro-optical device according to the present invention, a dummy pixel electrode to which the same potential as the common electrode is applied is formed in the non-display area of the element substrate, and a high-speed signal line for a drive circuit is provided below the dummy pixel electrode. Although formed, the shield electrode is formed so as to planarly overlap the high-speed signal line for driving circuit on the upper layer side. For this reason, even when the common potential changes such as the polarity of the common potential applied to the pixel electrode and the dummy pixel electrode is reversed, the change of the common potential does not affect the high-speed signal line for the drive circuit. Therefore, it is possible to reliably prevent the waveform of the signal transferred by the high-speed signal line for the drive circuit from being deteriorated.

In the present invention, the shield electrode may adopt a configuration in which a ground potential is applied as the constant potential, for example. Since the ground potential already exists on the element substrate, it is not necessary to generate a new potential.

In the present invention, the high-speed signal lines for driving circuit are, for example, a plurality of video signal lines for serially transferring image data to a sample hold circuit of the driving circuit. Such video signal lines are susceptible to signal degradation because image data is serially transferred at high speed. However, according to the present invention, signal degradation can be reliably prevented.

In the present invention, the dummy pixel electrode is provided inside the seal material, the drive circuit high-speed signal line is provided in a peripheral region outside the seal material, and the shield electrode is provided in the peripheral region. Preferably, the dummy pixel electrode is formed of the same conductive film as the dummy pixel electrode with the same planar pattern as the dummy pixel electrode. According to such a configuration, since the electrode in the same layer as the pixel electrode is formed over a wide area, the image display area including the peripheral area can be surely flattened.

In the present invention, the drive circuit high-speed signal line is provided in a region overlapping the dummy pixel electrode in a plane, and the shield electrode is interposed between the drive circuit high-speed signal line and the dummy pixel electrode. You may employ | adopt the structure which is. According to this configuration, even when the driving circuit high-speed signal line overlaps the dummy pixel electrode to which the common potential is applied, the change in the common potential does not affect the driving circuit high-speed signal line. Therefore, it is possible to reliably prevent the waveform of the signal transferred by the high-speed signal line for the drive circuit from being deteriorated.

In the present invention, it is preferable that the high-speed signal line for driving circuit and the dummy pixel electrode are provided inside a sealing material. If comprised in this way, the peripheral area | region outside a sealing material can be narrowed.

The present invention is highly effective when applied to a case where the pixel electrode is a reflective pixel electrode that reflects light incident from the counter substrate side. In the reflective liquid crystal device, in particular, an insulating film is formed so as to cover the pixel electrode in order to prevent disorder of liquid crystal alignment and optical scattering, and then the surface of the insulating film and the pixel electrode is polished to obtain a pixel. A configuration in which the surface of the electrode and a region sandwiched between adjacent pixel electrodes is a continuous flat surface is employed. When performing such flattening, if a dummy pixel electrode that does not directly contribute to the display is formed so as to surround the image display area on the outer peripheral side, a step is generated between the image display area and the non-display area outside it. Can be prevented.

The electro-optical device to which the present invention is applied can be used in electronic devices such as a mobile phone, a mobile computer, and a projection display device. Among these electronic devices, the projection display device includes a light source unit for supplying light to an electro-optical device (liquid crystal device) and a projection optical system that projects light modulated by the electro-optical device. ing.

Hereinafter, a reflection type liquid crystal device which is a typical electro-optical device will be described as an embodiment of the present invention. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. Further, illustration of a color filter, an alignment film, and the like is omitted. In the field effect transistor, the source and the drain are switched depending on the polarity of the applied voltage, but in the following description, for convenience of description.
The side to which the pixel electrode is connected will be described as the drain.

[Embodiment 1]
(Overall configuration of electro-optical device)
FIG. 1 is an explanatory diagram showing an electrical configuration of an electro-optical device (reflection-type liquid crystal device) to which the present invention is applied, and FIGS. 1A and 1B show the entire electro-optical device to which the present invention is applied. FIG. 2 is a block diagram showing an electrical configuration of the pixel and an equivalent circuit diagram showing a configuration of a pixel.

An electro-optical device 100 illustrated in FIG. 1 is a reflective liquid crystal device, and includes a reflective liquid crystal panel 10.
0p. The liquid crystal panel 100p includes a rectangular image display region 10a in which a plurality of pixels 100a are arranged in a matrix in the central region. In the liquid crystal panel 100p, in the element substrate 10 to be described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the image display region 10a, and the pixel 100a is located at a position corresponding to the intersection of them.
Is configured. In each of the plurality of pixels 100a, a field effect transistor 30 as a pixel transistor and a reflective pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the field effect transistor 30, the scanning line 3 a is electrically connected to the gate of the field effect transistor 30, and the pixel electrode is connected to the drain of the field effect transistor 30. 9a is electrically connected.

In the element substrate 10, a scanning line driving circuit 60 and a data line driving circuit 70 are configured in the non-display area 10 b outside the image display area 10 a. The data line driving circuit 70 is electrically connected to one end of each data line 6a, and the scanning line driving circuit 60 is electrically connected to each scanning line 3a. The scanning line driving circuit 60 includes a shift register 61. The scanning line driving circuit 60 generates a scanning signal based on the clock signal CLY, the clock inversion signal CBY, and the start pulse SPY input to the shift register 61, and sequentially supplies each scanning line 3a. Supply. The data line driving circuit 70 includes a shift register 71, a sample hold circuit 74, and a plurality of video signal lines 75. The sample hold circuit 74 includes a first latch circuit 72 and a second latch circuit 73. . The data line driving circuit 70 receives the video signals VID1 to VID6 supplied from the video signal line 75 at a predetermined timing based on the clock signal CLX, the clock inversion signal CBX, and the start pulse SPX input to the shift register 71. After being held in the first latch circuit 72, it is transferred to the second latch circuit 73, and the latch transfer signal LAT
Based on the above, an image signal is output to each data line 6a.

In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate, which will be described later, via a liquid crystal, and constitutes a liquid crystal capacitor 50a. In addition, each pixel 100a is provided with a holding capacitor 40 in parallel with the liquid crystal capacitor 50a in order to prevent fluctuations in the image signal held in the liquid crystal capacitor 50a. In this embodiment, a plurality of pixels 100 are formed in order to form the storage capacitor 40.
A capacitor line 3b extending in parallel with the scanning line 3a is formed across a, and a potential VCOM is applied to the capacitor line 3b. Note that as the potential VCOM, the same potential as a common potential LCCOM applied to a common electrode described later can be used.

(Configuration of liquid crystal panel 100p and element substrate 10)
FIG. 2 is an explanatory diagram of a planar configuration of the electro-optical device 100 to which the present invention is applied, and FIG.
(B) is a plan view when the liquid crystal panel 100p of the electro-optical device 100 to which the present invention is applied is viewed from the side of the counter substrate together with each component, and a plan view of the main part. 3 is similar to FIG.
It is H1-H1 'sectional drawing of a).

As shown in FIGS. 2 and 3, in the liquid crystal panel 100p of the electro-optical device 100, the element substrate 10 and the counter substrate 20 are bonded to each other with a seal material 107 through a predetermined gap, and the seal material 107 is the counter substrate. It is arrange | positioned so that the edge of 20 may be followed.

A liquid crystal layer 50 is held in a region surrounded by the sealant 107 between the element substrate 10 and the counter substrate 20. The sealing material 107 has a liquid crystal injection port formed by a partially interrupted portion. The liquid crystal injection port injects the liquid crystal inside the sealing material 107 and then seals the sealing material 10.
8 is sealed. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value. In this embodiment, the base of the element substrate 10 is a light transmissive substrate 10d, and the base of the counter substrate 20 is a similar light transmissive substrate 20d.

Hereinafter, each region of the element substrate 10 is shown in FIG.
Image display area 10 a... Array area of pixel electrodes 9 a Non-display area 10 b... Area outside image display area 10 a Peripheral area 10 c.

In this embodiment, the element substrate 10 is larger than the counter substrate 20 and includes an overhang region 10 e that projects from the end of the counter substrate 20. In the element substrate 10, the image display area 10 a
A data line driving circuit 70, a scanning line driving circuit 60, and a plurality of terminals 102 are formed outside (non-display area 10b).

In this embodiment, the data line driving circuit 70 includes the image display area 1 in the non-display area 10b.
It is formed in an adjacent region on the side where the projecting region 10e is located at 0a, and a part thereof extends to the peripheral region 10c outside the sealing material 107. The terminal 102 is connected to the peripheral region 10
In c, they are arranged along the edge of the element substrate 10. The scanning line driving circuit 60 is formed along the side adjacent to the side where the data line driving circuit 70 is located in the non-display area 10 b in the image display area 10 a, and is located inside the sealant 107. In addition, in the corner portion of the counter substrate 20, a vertical conductive material 109 is formed for electrical conduction between the element substrate 10 and the counter substrate 20.

As will be described in detail later, on the element substrate 10, reflective pixel electrodes 9a made of an aluminum-based metal material such as aluminum or aluminum alloy or a silver-based metal material such as silver or silver alloy are formed in a matrix. . In this embodiment, the pixel electrode 9a is made of an aluminum metal material such as aluminum or an aluminum alloy among the above metal materials. On the counter substrate 20, a translucent common electrode 21 made of an ITO (Indium Tin Oxide) film is formed.

The reflective electro-optical device 100 can be used as a color display device for electronic devices such as mobile computers and mobile phones. In this case, a color filter (not shown) and a protective film are formed on the counter substrate 20. Is done. Further, on the light incident side surface of the counter substrate 20, the type of the liquid crystal layer 50 to be used, that is, a TN (twisted nematic) mode, S
A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as a TN (super TN) mode, or a normally white mode / normally black mode. Furthermore, the electro-optical device 100 can be used as an RGB light valve in a projection display device (liquid crystal projector) described later. In this case, each of the RGB electro-optical devices 100 receives light of each color separated through RGB color separation dichroic mirrors as projection light, and thus no color filter is formed. .

(Configuration of each pixel)
FIG. 4 is an explanatory diagram of pixels of the electro-optical device 100 to which the present invention is applied.
b) is a plan view of adjacent pixels and a cross-sectional view when the electro-optical device 100 is cut at a position corresponding to the line AA ′. In FIG. 4A, the data line 6a and the drain electrode 6b are indicated by a one-dot chain line, the scanning line 3a and the capacitor line 3b are indicated by a solid line, the semiconductor layer 1a is a short dotted line, and the pixel electrode 9a is a two-dot chain line. It is shown.

As shown in FIG. 4, the element substrate 10 includes a translucent substrate 1 made of a quartz substrate, a glass substrate, or the like.
A transparent base insulating layer 15 made of a silicon oxide film or the like is formed on the surface 10x facing the counter substrate 20 at 0d, and an N channel is formed on the upper layer side of the base insulating layer 15 so as to overlap the pixel electrode 9a in a plane. Type field effect transistor 30 is formed. The field effect transistor 30 includes a channel region 1g, a low-concentration source region 1b, a high-concentration source region 1d, and a low-concentration drain with respect to the semiconductor layer 1a made of an island-shaped polysilicon film or an island-shaped single crystal semiconductor layer. It has an LDD structure in which a region 1c and a high concentration drain region 1e are formed. A translucent gate insulating layer 2 made of a silicon oxide film or a silicon nitride film is formed on the surface side of the semiconductor layer 1a. The surface of the gate insulating layer 2 is made of a metal film or a doped silicon film. A gate electrode (scanning line 3a) is formed. A capacity line 3b is opposed to a portion of the semiconductor layer 1a extending from the high-concentration drain region 1e with the gate insulating layer 2 interposed therebetween, and a storage capacitor 40 is formed.

In this embodiment, the field effect transistor 30 has an LDD (Lightly Doped Drain) structure, but adopts a structure in which a high concentration source region and a high concentration drain region are formed in a self-aligned manner on the scanning line 3a. Also good. In this embodiment, the gate insulating layer 2 is formed of a silicon oxide film formed by thermal oxidation, but a silicon oxide film or a silicon nitride film formed by a CVD method or the like can also be used. Furthermore, the gate insulating layer 2 may be a multilayer film including a silicon oxide film formed by thermal oxidation and a silicon oxide film or a silicon nitride film formed by a CVD method or the like. Furthermore, in the element substrate 10, a single crystal silicon substrate can be used as the base.

On the upper layer side of the field effect transistor 30, interlayer insulating films 71 and 72 made of a silicon oxide film, a silicon nitride film, or the like are formed. A data line 6a and a drain electrode 6b are formed on the surface of the interlayer insulating film 71. The data line 6a is electrically connected to the high concentration source region 1d through a contact hole 71a formed in the interlayer insulating film 71. The drain electrode 6b is connected to the high concentration drain region 1e through a contact hole 71b formed in the interlayer insulating film 71.
Is electrically connected.

A reflective pixel electrode 9a is formed in an island shape on the surface of the interlayer insulating film 72. The pixel electrode 9a is connected to the drain electrode 6b via a contact hole 72b formed in the interlayer insulating film 72.
Is electrically connected. In performing this electrical connection, in this embodiment, the inside of the contact hole 72b is filled with a conductive film called a plug 8a, and the pixel electrode 9a is electrically connected to the drain electrode 6b through the plug 8a. ing. According to such a configuration, there is an advantage that unevenness due to the contact hole 72b does not occur on the surface of the pixel electrode 9a. The surface of the plug 8a and the surface of the interlayer insulating film 72 form a continuous flat surface, and the pixel electrode 9a is formed on the flat surface. In order to form the plug 8a, a contact hole 72b is formed in the interlayer insulating film 72, a conductive film for plug is formed, and the conductive film is then polished. In such polishing, chemical mechanical polishing (Chemical M
echanical Polishing) is used.

In the element substrate 10, a recess 9s having a depth corresponding to the thickness of the pixel electrode 9a is formed between adjacent pixel electrodes 9a. The recess 9s is filled with a recess filling insulating film 78a. Yes. The recess filling insulating film 78a is formed only in the recess 9s, and the pixel electrode 9
It is not formed in a region overlapping with a in a plane. The thickness dimension of the recess filling insulating film 78a is equal to the depth dimension of the recess 9s. Therefore, the surface of the recess filling insulating film 78a and the surface of the pixel electrode 9a form a continuous flat surface, and the alignment film 16 is formed on the flat surface. Therefore, when the alignment film 16 is formed of a rubbed polyimide film or the like, the rubbing process can be performed appropriately. Further, the recess filling insulating film 78a can prevent a lateral electric field from being generated between the adjacent pixel electrodes 9a.

In the counter substrate 20, the entire surface of the translucent substrate 20d facing the element substrate 10 is made of ITO.
A common electrode 21 made of a film is formed, and an alignment film 26 is formed on the surface of the common electrode 21.

The element substrate 10 and the counter substrate 20 configured as described above are arranged to face each other so that the pixel electrode 9a and the common electrode 21 face each other, and the space between these substrates is surrounded by the sealing material 107. A liquid crystal layer 50 as an electro-optical material is enclosed. The liquid crystal layer 50 takes a predetermined alignment state by the alignment films 16 and 26 formed on the element substrate 10 and the counter substrate 20 in a state where an electric field from the pixel electrode 9a is not applied. The liquid crystal layer 50 is made of a mixture of one kind or several kinds of nematic liquid crystals.

In the reflection type electro-optical device 100, the pixel 1 selected by the scanning line 3a.
In 00a, the image signal supplied from the data line 6a is written through the field effect transistor 30, and the orientation of the liquid crystal layer 50 is controlled by the electric field generated between the pixel electrode 9a and the common electrode 21. Accordingly, light incident from the counter substrate 20 side is reflected by the pixel electrode 9a and is again light-modulated for each pixel by the liquid crystal layer 50 while being emitted from the counter substrate 20 side, so that an image is displayed. .

The electro-optical device 100 according to the present embodiment is a normally black type, and display light is not emitted from the pixels 100 a in which no electric field is applied to the liquid crystal layer 50. Further, the electro-optical device 1 of the present embodiment
00 adopts a frame inversion method in which the electric field applied to the liquid crystal layer 50 is inverted every frame. In adopting such a frame inversion method, the polarity of the common potential LCCOM applied to the common electrode 21 is inverted every frame.

(Dummy pixel electrode and shield electrode configuration)
FIG. 5 is an explanatory diagram of various electrodes (pixel electrode, dummy pixel electrode, and shield electrode) formed in the electro-optical device 100 to which the present invention is applied. FIGS. 5 (a), 5 (b), and 5 (c) are illustrated. Each,
FIG. 4 is a plan view of a pixel electrode, a plan view of a dummy pixel electrode, and a plan view of a shield electrode.

When the recess 9s between the adjacent pixel electrodes 9a is filled with the recess filling insulating film 78a described with reference to FIG. 4, the pixel electrode 9a is formed, an insulating film is formed, and then the pixel electrode is formed. The insulating film is polished until 9a is exposed. In such polishing, chemical mechanical polishing is used. In chemical mechanical polishing, while supplying slurry between a polishing cloth (pad) made of non-woven fabric, polyurethane foam, porous fluororesin, and the like and the element substrate 10, the polishing cloth is used as the element substrate 1.
Polishing is performed with relative rotation on 0. For this reason, it is preferable that the peripheral part of the image display area 10a is also in the same surface state as the image display area 10a. So, in this form,
As shown in FIGS. 2 and 3, in the non-display area 10 b, dummy pixel electrodes 9 b are formed in an area sandwiched between the image display area 10 a in which the pixel electrodes 9 a are arranged and the sealing material 107. Here, the dummy pixel electrode 9b is formed simultaneously with the pixel electrode 9a and is made of the same conductive film as the pixel electrode 9a. For this reason, in this embodiment, a step due to the presence or absence of the pixel electrode 9a does not occur on the outer peripheral edge of the image display region 10a in which the pixel electrodes 9a are arranged, and the entire image display region 10a is preferably flattened. Can do.

Here, as shown in FIG. 5A, each pixel electrode 9a is formed in an independent island shape. In contrast, the dummy pixel electrode 9b includes a rectangular area 91b similar to the pixel electrode 9a and a bridge portion 92b that connects adjacent rectangular areas 91b.
b are connected to each other. Therefore, in the present embodiment, the common potential LCCOM is applied to the dummy pixel electrode 9b as in the common electrode 21. For this reason, the alignment of the liquid crystal molecules is also controlled in the portion of the liquid crystal layer 50 that overlaps the dummy pixel electrode 9b in a planar manner. Here, since the electro-optical device 100 is configured in the normally black mode, no light is emitted from a portion of the liquid crystal layer 50 that overlaps the dummy pixel electrode 9b in a plane, and thus the image display region 10a.
Leakage of light from the outside is prevented.

In this embodiment, the shield electrode 9c is formed in a region sandwiched between the sealing material 107 and the arrangement region of the terminals 102 in the overhang region 10e. The shield electrode 9c is an electrode formed simultaneously with the pixel electrode 9a and the dummy pixel electrode 9b, and is made of the same conductive film as the pixel electrode 9a and the dummy pixel electrode 9b. Further, as shown in FIG. 5C, the shield electrode 9c includes a rectangular area 91c similar to the pixel electrode 9a and the rectangular area 91b, and a bridge portion 92c that connects adjacent rectangular areas 91c. Dummy pixel electrode 9
The same plane pattern as b is provided. For this reason, in this embodiment, a step due to the presence or absence of the pixel electrode 9a does not occur over a wide area on the outer peripheral side of the image display area 10a, and the entire image display area 10a can be suitably flattened.

Here, a video signal line 75 for supplying a video signal to the sample hold circuit 74 of the data line driving circuit 70 passes through a region overlapping the shield electrode 9c on the lower layer side on the lower layer side. Is a high-speed signal line through which image data is serially transferred.

Therefore, in this embodiment, as shown in FIGS. 2B and 3, the slit 95 for insulatingly separating the dummy pixel electrode 9 b and the shield electrode 9 c is provided in a region overlapping the sealing material 107 in a plan view.
Is formed, and a constant potential is applied to the shield electrode 9c. In this form,
As a constant potential, the ground potential GND is applied to the shield electrode 9c. For this reason, the shield electrode 9 c is electrically connected to the ground terminal 102 a among the plurality of terminals 102.

(Main effects of this form)
As described above, in the electro-optical device 100 according to this embodiment, the non-display region 1 of the element substrate 10 is used.
0b includes a dummy pixel electrode 9b to which the same potential as the common electrode 21 is applied, and a video signal line 75.
(High-speed signal line for driving circuit) is formed, but the video signal line 75 is connected to the dummy pixel electrode 9.
It is formed at a position shifted from a position overlapping with b in plan view. Therefore, even when the common potential LCCOM changes, for example, the polarity of the common potential LCCOM applied to the pixel electrode 9a and the dummy pixel electrode 9b is reversed, the change in the common potential LCCOM affects the video signal line 75. Does not reach. Therefore, it is possible to reliably prevent the waveform of the signal transferred by the video signal line 75 from being deteriorated.

In the non-display area 10b, an electrode formed simultaneously with the dummy pixel electrode 9b in the peripheral area 10c outside the sealant 107 is formed at a position overlapping the video signal line 75 in a plane. A shield electrode 9c to which a ground potential is applied. For this reason, a change in the common potential LCCOM does not affect the video signal line 75, and electromagnetic noise from the outside does not affect the video signal line 75. Therefore, it is possible to reliably prevent the waveform of the signal transferred by the video signal line 75 from being deteriorated. Further, the electromagnetic wave noise can be prevented from being emitted from the video signal line 75 to the outside by the shield electrode 9c.

In the present embodiment, a ground potential is applied as a constant potential to the shield electrode 9c, and the ground potential is already present on the element substrate 10 if it is such a ground potential. For this reason, it is not necessary to generate a constant potential to be applied to the shield electrode 9c.

[Embodiment 2]
6A and 6B are explanatory views of a planar configuration of the electro-optical device 100 according to Embodiment 2 of the present invention. FIGS. 6A and 6B illustrate the liquid crystal panel 100p used in the electro-optical device 100, respectively. It is the top view when it sees from the counter substrate 20 side with a component, and the top view of the principal part. FIG. 7 is a cross-sectional view taken along line H2-H2 ′ of FIG. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

The electro-optical device shown in FIGS. 6 and 7 is also a reflective liquid crystal device as in the first embodiment. In the element substrate 10, a plurality of pixel electrodes 9a are arranged in a matrix in the image display region 10a. Yes. In the element substrate 10, the scanning line driving circuit 6 is provided in the non-display area 10 b.
In this embodiment, the data line drive circuit 70 includes a video signal line 75 (a high-speed signal line for a drive circuit) as in the first embodiment.

Also in this embodiment, as in the first embodiment, the electro-optical device 100 is a normally black system, and display light is not emitted from the pixel 100a in which no electric field is applied to the liquid crystal layer 50. Further, the electro-optical device 100 according to the present embodiment employs a frame inversion method in which the electric field applied to the liquid crystal layer 50 is inverted every frame. In adopting such a frame inversion method,
The polarity of the common potential LCCOM applied to the common electrode 21 is inverted every frame.

In the electro-optical device 100 configured as described above, as in the first embodiment, the data line driving circuit 70 is configured in the non-display region 10b. However, in this embodiment, unlike the first embodiment, the data line driving circuit 70 is configured in the inner region of the sealant 107.

Also in this embodiment, as in Embodiment 1, the insulating film formed on the surface side of the pixel electrode 9a is polished and planarized. For this reason, the image display area 10a and the sealing material 107 are also provided for the peripheral portion of the image display area 10a so as to have the same surface state as the image display area 10a.
A dummy pixel electrode 9b is formed in a region between the dummy pixel electrode 9b and the dummy pixel electrode 9b.
Is formed simultaneously with the pixel electrode 9a. Here, the pixel electrode 9a is formed as shown in FIGS.
As described above, each of the dummy pixel electrodes 9b has a rectangular area 91b similar to the pixel electrode 9a and a bridge portion 92b that connects adjacent rectangular areas 91b. I have.

In the present embodiment, a video signal line 75 passes through a region overlapping the dummy pixel electrode 9b on the lower layer side, and the video signal line 75 is a high-speed signal line through which image data is serially transferred. Therefore, in this embodiment, a shield electrode 6c is formed in a region overlapping the video signal line 75 and the dummy pixel electrode 9b in a plane so as to be interposed between the video signal line 75 and the dummy pixel electrode 9b. In this embodiment, the video signal line 75 is made of the same conductive film as the gate line 3a (see FIG. 4) between the base insulating film 15 and the interlayer insulating film 71, and the pixel electrode 9
Since a and the dummy pixel electrode 9b are formed in the upper layer of the interlayer insulating film 72, the data line 6a (see FIG. 4) between the interlayer insulating film 71 and the interlayer insulating film 72 for the shield electrode 6c.
Reference) and the same conductive film.

A constant potential is applied to the shield electrode 6c, and as this constant potential, in this embodiment, the ground potential GND is applied to the shield electrode 6c. For this reason, the shield electrode 6 c is electrically connected to the ground terminal 102 a among the plurality of terminals 102.

As described above, in the electro-optical device 100 according to this embodiment, the non-display region 1 of the element substrate 10 is used.
In 0b, a video signal line 75 (a high-speed signal line for driving circuit) is formed in a region overlapping in a planar manner on the lower layer side with respect to the dummy pixel electrode 9b to which the same potential as the common electrode 21 is applied. A shield electrode 6c to which a ground potential is applied is interposed between the video signal line 75 and the dummy pixel electrode 9b. Therefore, even when the common potential LCCOM changes, for example, the polarity of the common potential LCCOM applied to the pixel electrode 9a and the dummy pixel electrode 9b is reversed, the change in the common potential LCCOM affects the video signal line 75. Does not reach. It is possible to reliably prevent the waveform of the signal transferred by the video signal line 75 from deteriorating.

Further, in this embodiment, the video signal line 75, the dummy pixel electrode 9 b, and the entire data line driving circuit 70 are provided inside the sealing material 107. For this reason, the peripheral region 10c outside the sealant 107 can be narrowed.

In this embodiment, the shield electrode 6c is provided between the video signal line 75 and the dummy pixel electrode 9b.
Is formed using a conductive film formed simultaneously with the data line 6a. For this reason, even when the shield electrode 6c is added, there is no need to add a new conductive layer, so that there is an advantage that the productivity is excellent.

Further, in the present embodiment, a ground potential is applied as a constant potential to the shield electrode 6c, and if it is such a ground potential, it already exists on the element substrate 10. For this reason, it is not necessary to generate a constant potential to be applied to the shield electrode 6c.

[Other embodiments]
In the first and second embodiments, the present invention is applied to the reflective liquid crystal device. However, a configuration in which the shield electrodes 6c and 9c are provided may be employed for the transmissive liquid crystal device.

[Example of mounting on electronic devices]
The reflective electro-optical device 100 according to the present invention is used in a projection display device (liquid crystal projector / electronic device) shown in FIG. 8A and a portable electronic device shown in FIGS. 8B and 8C. be able to.

A projection display device 1000 shown in FIG. 8A includes a light source unit 810 along the system optical axis L,
Polarized illumination apparatus 800 in which integrator lens 820 and polarization conversion element 830 are arranged
have. In addition, the projection display apparatus 1000 includes a polarizing beam splitter 840 that reflects the S-polarized light beam emitted from the polarization illumination device 800 along the system optical axis L by the S-polarized light beam reflecting surface 841, and the S of the polarizing beam splitter 840. Of the light reflected from the polarized light beam reflecting surface 841, the dichroic mirror 842 that separates the blue light (B) component and the red light (R) component of the light flux after the blue light is separated are reflected. And a dichroic mirror 843 for separation. Further, the projection display apparatus 1000 includes three electro-optical devices 100R, 100G, and 100B (electro-optical devices 100) on which each color light is incident. The projection display apparatus 1000 includes dichroic mirrors 842 and 843 and a polarization beam splitter 84 that are light modulated by the three electro-optical devices 100R, 100G, and 100B.
After combining at 0, the combined light is projected onto the screen 860 by the projection optical system 850.

Next, the cellular phone 3000 shown in FIG. 8B includes a plurality of operation buttons 3001, scroll buttons 3002, and an electro-optical device 100 as a display unit <direct-view display device>.
Is provided. By operating the scroll button 3002, the screen displayed on the electro-optical device 100 is scrolled. Information portable terminal (PDA: Personal D) shown in FIG.
igital assistants) includes a plurality of operation buttons 4001, a power switch 4002, and the electro-optical device 100 as a display unit. When the power switch 4002 is operated, various kinds of information such as an address book and a schedule book are displayed. Is displayed.

Further, as an electronic apparatus in which the electro-optical device 100 to which the present invention is applied is mounted, FIG.
), (B), (c), head mounted display, digital still camera, LCD TV, viewfinder type, monitor direct-view type video tape recorder, car navigation device, pager, electronic notebook, calculator, word processor , Electronic devices such as workstations, videophones, POS terminals and bank terminals.

Further, even when the electro-optical device 100 is configured as a transmission type, the electro-optical device 100 in which the present invention is applied to a light valve of a transmission type projection display device or a direct-view type display device can be used.

It is explanatory drawing which shows the electrical structure of the electro-optical apparatus (reflection-type liquid crystal device) to which this invention is applied. FIG. 3 is an explanatory diagram of a planar configuration of the electro-optical device according to the first embodiment of the invention. It is H1-H1 'sectional drawing of Fig.2 (a). It is explanatory drawing of the pixel of the electro-optical apparatus to which this invention is applied. It is explanatory drawing of the various electrodes (a pixel electrode, a dummy pixel electrode, and a shield electrode) formed in the electro-optical apparatus to which this invention is applied. FIG. 6 is an explanatory diagram of a planar configuration of an electro-optical device according to Embodiment 2 of the invention. It is H2-H2 'sectional drawing of Fig.6 (a). It is explanatory drawing of the electronic device using the reflection type electro-optical apparatus to which this invention is applied.

Explanation of symbols

6c, 9c ... Shield electrode, 9a ... Pixel electrode, 9b ... Dummy pixel electrode, 10 ... Element substrate, 20 ... Counter substrate, 21 ... Common electrode, 30 ... Field effect transistor (pixel transistor) 50..Liquid crystal layer 60..Scanning line driving circuit 70..Data line driving circuit 75..Video signal line (high-speed signal line) 100..Electro-optical device 100a..pixel

Claims (8)

An element substrate provided with a pixel electrode, a counter substrate disposed opposite to the element substrate, a sealing material for bonding the counter substrate and the element substrate, and the element substrate within a region surrounded by the sealing material An electro-optical device having a liquid crystal layer held by the counter substrate and a common electrode provided on the element substrate or the counter substrate, wherein a potential applied to the common electrode changes every set period Because
In the non-display area on the outer peripheral side of the image display area where a plurality of the pixel electrodes are arranged on the element substrate,
A dummy pixel electrode formed of the same conductive film as the pixel electrode and applied with the same potential as the common electrode;
A high-speed signal line for a drive circuit provided on a lower layer side than the dummy pixel electrode;
A shield electrode to which a constant potential is applied, and is provided so as to overlap at least on the upper layer side with respect to the high-speed signal line for the drive circuit;
An electro-optical device comprising: The electro-optical device according to claim 1, wherein a ground potential is applied to the shield electrode as the constant potential. 3. The electro-optical device according to claim 1, wherein the high-speed signal lines for the drive circuit are a plurality of video signal lines for serially transferring image data to a sample hold circuit of the drive circuit. The dummy electrode is provided inside the sealing material,
The drive circuit high-speed signal line is provided in a peripheral region outside the seal material,
4. The shield electrode according to claim 1, wherein the shield electrode is formed in the peripheral region with the same planar pattern as the dummy pixel electrode by using the same conductive film as the dummy pixel electrode. 5. Electro-optic device. The high-speed signal line for the drive circuit is provided in a region overlapping the dummy pixel electrode in a plane,
4. The electro-optical device according to claim 1, wherein the shield electrode is interposed between the high-speed signal line for driving circuit and the dummy pixel electrode. 5. 6. The electro-optical device according to claim 5, wherein the driving circuit high-speed signal line and the dummy pixel electrode are provided inside the sealing material. The electro-optical device according to claim 1, wherein the pixel electrode is a reflective pixel electrode that reflects light incident from the counter substrate side. An electronic apparatus comprising the electro-optical device according to claim 1.