JP2010123839A - Semiconductor module - Google Patents

Abstract

A semiconductor module having a shielding effect and capable of responding to a low profile and having high reliability is provided.
The semiconductor module includes a module substrate on which an electronic component is mounted on an upper surface, a flat top plate disposed on the upper surface side of the module substrate and covering the electronic component. An elastic member 40 having an elastic function is provided between the top plate 30 and the electronic component 20. The elastic member 40 is made of a sheet-like low-elasticity resin, and is fixed in advance to a surface of the top plate 30 that faces the electronic component 20. The top plate 30 is fixed to the electronic component 20 by the elastic member 40. The top plate 30 is formed on the base material 31 so as to cover the base material 31 made of a glass epoxy material, the conductive foil 32 formed on the base 31, and the conductive foil 32. It has a composite structure including an insulating layer 33 made of a solder resist.
[Selection] Figure 2

Description

  The present invention relates to a semiconductor module, and more particularly to a semiconductor module on which electronic components are mounted.

  In recent years, in the field of electronic equipment such as information communication equipment, there is an increasing demand for downsizing and high functionality of equipment. For this reason, electronic components mounted inside devices are being downsized, enhanced in functionality, and mounted in high density, and these electronic components are modularized to further increase functionality and mount in high density. It is illustrated.

  2. Description of the Related Art Conventionally, as a module mounted on such an electronic device, a semiconductor module having a metal case for shielding high frequency noise or the like is known (see, for example, Patent Document 1).

  Patent Document 1 describes a high-frequency module (semiconductor module) including a substrate on which electronic components are mounted and a metal case attached to the substrate so as to cover the mounted electronic components. In this high-frequency module, the metal case has a soldering terminal formed in an L shape by forming a cut in a part including its four corners and bending the inside of the case. A land (soldering pad) corresponding to the soldering terminal of the metal case is provided on the electronic component mounting surface of the substrate. The metal case is attached to the substrate by soldering the solder terminal of the metal case to the land.

  However, in the structure of the conventional high-frequency module described in Patent Document 1, it is necessary to provide lands (pads) on the electronic component mounting surface of the substrate in order to attach the metal case to the substrate. For this reason, there is a problem that it is difficult to reduce the size of the module because it is necessary to secure a region for forming lands on the substrate.

  Therefore, a semiconductor module (for example, SAYEV series manufactured by Murata Manufacturing Co., Ltd.) having a top plate instead of a metal case is conventionally known as a semiconductor module that can solve the above problems.

  31 and 32 are cross-sectional views showing the structure of a conventional semiconductor module. Referring to FIGS. 31 and 32, in a conventional semiconductor module 1000, a module substrate 1010 on which a plurality of electronic components 1020 are mounted, and a flat top plate provided so as to cover these electronic components 1020 1030. This top plate 1030 is formed by resin compression molding and is configured as a single component. The plurality of electronic components 1020 include a tall component 1022 (for example, a WL-CSP (Wafer Level Chip Size Package)) that is taller than the passive component 1021, as well as a passive component 1021 such as a resistor. The top plate 1030 is fixed only to the tallest tall component 1022 mounted on the module substrate 1010 with a thermosetting hard adhesive. Specifically, as shown in FIG. 31, after the adhesive 1040 is applied to the top surface of the tallest component 1022 mounted on the module substrate 1010, the adhesive 1040 is applied as shown in FIG. The top plate 1030 is mounted so as to be pressed against. Then, the top plate 1030 is fixed to the high-profile component 1022 by the thermosetting of the adhesive 1040. In the semiconductor module 1000, the top plate 1030 and the module substrate 1010 are formed to have the same outer dimensions (planar shape, plane area).

  In the conventional semiconductor module 1000 configured as described above, since the top plate 1030 is fixed to the high-profile component 1022, there is no need to provide a land on the module substrate 1010. For this reason, since it is not necessary to ensure the area | region which forms a land, it becomes possible to achieve size reduction of a semiconductor module.

Japanese Patent No. 3914634

  However, in the conventional semiconductor module 1000 shown in FIGS. 31 and 32, since the top plate 1030 is fixed only to the high-profile component 1022, the high-profile component 1022 is mounted when mounted on a printed circuit board or the like by the mounter 1050 or the like. There is an inconvenience that an impact load by the mounter head 1050 is concentrated and applied to (a part base, a Si chip part, a solder ball part, etc. in WL-CSP). For this reason, the high-profile component 1022 is damaged, or the electrical connection between the high-profile component 1022 and the module substrate 1010 is interrupted, so that there is a problem that reliability is lowered.

  Further, in the conventional semiconductor module 1000 described above, the top plate 1030 is formed by compression molding of resin, so that there is an inconvenience that it is easily chipped. For this reason, when it is going to improve impact resistance, it is necessary to increase the thickness of the top plate 1030 significantly. This increases the thickness of the semiconductor module 1000, which makes it difficult to reduce the height of the module.

  Further, in the conventional semiconductor module 1000 described above, since the top plate 1030 is formed of a single component member of resin, there is also a problem that a shielding effect (shielding effect) cannot be obtained.

  The present invention has been made in order to solve the above-described problems, and one object of the present invention is to have a shielding effect, to cope with a reduction in height, and to be reliable. This is to provide a semiconductor module having a high level.

  Another object of the present invention is to provide a semiconductor module that can be reduced in size and space.

  In order to achieve the above object, a semiconductor module according to one aspect of the present invention includes a substrate on which an electronic component is mounted on one main surface, and a flat plate shape disposed on the one main surface side of the substrate and covering the electronic component. And an elastic member having an elastic function disposed between the top plate and the electronic component. The top plate includes a conductive member and is fixed to the electronic component by an elastic member.

  In the semiconductor module according to this aspect, as described above, the impact received from the mounter when mounted on a printed circuit board or the like by fixing the flat top plate to an electronic component via an elastic member having an elastic function. Can be absorbed by the elastic member. For this reason, since the impact load applied to an electronic component can be relieved, load resistance can be improved. Thereby, while being able to suppress that the mounted electronic component is damaged, it can suppress that the electrical connection of an electronic component and a board | substrate is interrupted | blocked. As a result, reliability can be improved.

  Moreover, in the semiconductor module according to one aspect, as described above, the shielding effect can be obtained by configuring the top plate so as to include the conductive member. Moreover, in one situation, the mechanical strength of the top plate can be improved by configuring the top plate so as to include a conductive member, so that the impact resistance of the top plate can be improved. Thereby, since it can suppress that the thickness of a top plate becomes large, it can respond to the low profile of a module.

  In the semiconductor module according to one aspect, since the top plate is fixed to the electronic component, it is not necessary to provide a land on the substrate. For this reason, since it is not necessary to ensure the area | region which forms a land in a board | substrate, size reduction and space saving can be achieved.

  In the semiconductor module according to the above aspect, preferably, the conductive member is a conductive foil, and the top plate is a composite including an insulating base material portion and a conductive foil formed on the base material portion. It has a structure. If comprised in this way, the semiconductor module provided with the top plate which has a shielding effect can be obtained easily.

  In the semiconductor module including the top plate having the above composite structure, preferably, the base portion of the top plate is made of a glass epoxy material, and the conductive foil of the top plate is made of a copper foil. If comprised in this way, the semiconductor module which has a shield effect can be obtained more easily. Moreover, if comprised in this way, the top plate which has a softness | flexibility can be formed easily. In addition, by comprising in this way, since a top plate can be formed without using a metal mold | die, it can suppress that an installation cost and a manufacturing cost increase. That is, in a conventional semiconductor module with a metal case attached, a processing mold is required to manufacture the metal case. Moreover, in the conventional semiconductor module provided with the top plate formed by compression molding of resin, the metal mold | die for compressing and molding a top plate is needed. As described above, in the conventional semiconductor module described above, a mold is required for manufacturing the metal case and the top plate, so that the initial cost required for manufacturing the mold is extremely high. For this reason, there exists a problem that an installation cost and manufacturing cost increase. On the other hand, the base plate of the top plate is made of glass epoxy material, and the conductive foil to be formed on the base plate is made of copper foil to form the top plate using a manufacturing process such as printed circuit boards. This eliminates the need for a metal mold for manufacturing a metal case or the like. Thereby, it can suppress that an installation cost increases, and can reduce the manufacturing cost of a semiconductor module.

  In the top plate having the composite structure, preferably, the conductive foil has a plane area smaller than that of the base material portion, and when viewed in plan, the outer edge of the conductive foil is the outer edge of the base material portion. Conductive foil is arranged so that it may be located inside. With such a configuration, even when the top plate is detached while mounted on a printed circuit board or the like, it is possible to reliably suppress the occurrence of an electrical short circuit or leakage with peripheral components.

  In the semiconductor module according to the above aspect, the elastic member formed in a sheet shape having a predetermined thickness can be used. Moreover, such an elastic member can also be fixed to the top plate in advance.

  In the semiconductor module according to the above aspect, the elastic member is preferably made of an epoxy-based low elastic resin. By fixing the top plate through such an elastic member, the elastic member can easily absorb the impact received from the mounter when mounted on a printed circuit board or the like. Thereby, the impact load applied to the electronic component can be easily reduced.

  In the semiconductor module according to the above aspect, preferably, a plurality of electronic components are mounted on the substrate, and the elastic member is fixed to the entire surface of the top plate facing the electronic components. It is fixed to at least some of the plurality of electronic components. If comprised in this way, a top plate can be fixed not only to the tallest and tallest part among a plurality of electronic parts, but also to the electronic parts having a height close to that of the tallest part. For this reason, by fixing the top plate to electronic components that are close in height to high-profile components, the impact load received from the mounter when mounted on a printed circuit board can be distributed to multiple electronic components. The impact load applied to the electronic component can be effectively reduced. In this case, electronic components with a large area (high-profile components) and electronic components close to the height are selected at the board design stage, and these electronic components are within the range that does not affect the electrical performance. The components are preferably distributed on the substrate.

  In the semiconductor module according to the above aspect, the surface of the top plate facing the electronic component is preferably subjected to surface roughening. If comprised in this way, since the adhesiveness of an elastic member and a top plate can be improved, an elastic member can be easily fixed to a top plate. Thereby, a top plate can be easily attached with an elastic member. In addition, as said surface roughening process, an argon plasma process etc. are mentioned, for example. Moreover, it is preferable that the surface facing the electronic component in the top plate is roughened to a roughness of about 400 nm by the surface roughening treatment.

  In the semiconductor module according to the above aspect, the top plate preferably has flexibility. If comprised in this way, the impact load added to a semiconductor module can be relieve | moderated more effectively, when a top plate bends, Therefore A load resistance can be improved more.

  In the semiconductor module according to the above aspect, the top plate preferably has a smaller planar area than the substrate, and the outer edge of the top plate is located inside the outer edge of the substrate when viewed in a plan view. Thus, a top plate is disposed. If constituted in this way, a strong impact was applied from the side of the semiconductor module due to, for example, dropping in the module assembly process, or shaking due to vibration during transportation of the product (semiconductor module) in the packing tray storage state. Even in this case, unlike the conventional semiconductor module in which the top board and the module substrate are formed to have the same outer dimensions, it is possible to suppress such an impact from being directly applied to the top board. As a result, a strong impact from the side is directly applied to the top plate, resulting in inconvenience that the mounted electronic component is damaged or the electrical connection between the electronic component and the board is broken. Therefore, reliability can be further improved.

  In the semiconductor module according to the above aspect, the top plate preferably further includes an insulating member that covers the conductive member. If comprised in this way, even when a top plate remove | deviates in the state mounted in the printed circuit board etc., it can suppress that an electrical short circuit, a leak, etc. with a peripheral component etc. arise.

  In the semiconductor module including the top plate including the insulating member, the insulating member may have an opening that exposes a part of the conductive member. If comprised in this way, a part of electroconductive member exposed by the opening part and the grounding shielding effect will be easily made by electrically connecting, for example, the grounding part of the electronic device in which the semiconductor module is mounted. Can be obtained.

  In this case, the top plate may be disposed so that the opening is located on the side opposite to the electronic component. If comprised in this way, a part of electroconductive member can be electrically connected with the earthing | grounding part of the electronic device by which a semiconductor module is mounted easily.

  In this case, the top plate may be disposed so that the opening is located on the electronic component side.

  In the configuration in which the top plate is disposed so that the opening is positioned on the electronic component side, a part of the conductive member exposed by the opening can be electrically connected to the electronic component. If comprised in this way, by electrically connecting the electronic component electrically connected with an electroconductive member with the ground line (GND) of a semiconductor module (board | substrate), it will be electroconductive via an electronic component. The member can be grounded. For this reason, the ground shield effect can be obtained also by this. In this case, if at least one of the electronic components electrically connected to the ground line (GND) is a low-resistance resistance element, the potential of the conductive member of the top plate is made substantially the same as the GND potential. Can do.

  In the configuration in which a part of the conductive member is exposed to the electronic component side, preferably, a plurality of openings are formed in the insulating member. If comprised in this way, by electrically connecting an electroconductive member and an electronic component in multiple places, while obtaining a ground shielding effect, an electronic component electrically connected with an electroconductive member is used for a top plate. Can be supported. In addition, by using an electronic component electrically connected to the conductive member as a capacitor, the electronic component can function as a bypass capacitor.

  As described above, according to the present invention, it is possible to easily obtain a highly reliable semiconductor module that has a shielding effect and can cope with a low profile.

  Furthermore, according to the present invention, a semiconductor module that can be reduced in size and space can be easily obtained.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments embodying the present invention will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is an exploded perspective view of a semiconductor module according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the semiconductor module according to the first embodiment of the present invention. FIG. 3 is an overall perspective view of the semiconductor module according to the first embodiment of the present invention, and FIG. 4 is a plan view of the semiconductor module according to the first embodiment of the present invention. 5 to 7 are views for explaining the semiconductor module according to the first embodiment of the present invention. FIG. 2 shows a cross section taken along the line AA of FIG. First, the structure of the semiconductor module 1 according to the first embodiment of the present invention will be described with reference to FIGS.

  As shown in FIGS. 1 to 3, the semiconductor module 1 according to the first embodiment includes a module substrate 10, a plurality of electronic components 20 mounted on the upper surface (one main surface) of the module substrate 10, and these electronic components. And a flat top plate 30 covering 20. The module substrate 10 is an example of the “substrate” in the present invention.

  Further, the semiconductor module 1 according to the first embodiment has a square shape as seen in a plan view as shown in FIG. Specifically, the semiconductor module 1 has a width W of about 5.9 mm in the X direction and a length L of about 5.9 mm in the Y direction. As shown in FIG. 2, the semiconductor module 1 has a thickness t of about 1.0 mm.

  The module substrate 10 constituting the semiconductor module 1 is composed of a ceramic multilayer substrate having a predetermined thickness. As shown in FIG. 4, the module substrate 10 is formed in a square shape having four sides (outer edges) 11 in plan view. Specifically, the module substrate 10 has a width W1 in the X direction of about 5.9 mm and a length L1 in the Y direction of about 5.9 mm. As shown in FIG. 2, the module substrate 10 is formed with a wiring conductor 12 formed in a predetermined wiring pattern and to which the electronic component 20 is electrically connected. On the other hand, on the lower surface of the module substrate 10, an electrode terminal 13 that is electrically connected to the wiring conductor 12 through a via hole (not shown) or the like is formed.

  As shown in FIGS. 1 and 2, the plurality of electronic components 20 mounted on the module substrate 10 include a semiconductor element 21 and passive components 22 such as a resistor, an inductor, and a capacitor. The plurality of electronic components 20 are appropriately selected so as to exhibit a target function, and are mounted on the module substrate 10. For example, when the semiconductor module 1 is used as a television tuner module, an RF-IC (Radio Frequency Integrated Circuit) or the like is used as the semiconductor element 21.

  The passive component 22 is composed of a chip-type electronic component (chip component). This passive component 22 is made of a ceramic sintered body and has external terminal electrodes 22a at both ends thereof. The size of the passive component 22 is, for example, 0.6 mm in length x 0.3 mm in width x 0.3 mm in height in the case of the so-called 0603 part, and 0.4 mm in length x 0.4 mm in the width in the case of the commonly-known 0402 part. The height is 0.2 mm.

  The plurality of electronic components 20 described above are mounted in a predetermined region on the module substrate 10 so that they are electrically connected to each other via the wiring conductors 12 (see FIG. 2) of the module substrate 10 and via holes (not shown). Thus, a kind of integrated circuit is formed. In the first embodiment, the semiconductor element 21 mounted on the module substrate 10 is configured as a WL-CSP. The size of the semiconductor element 21 is, for example, 3.6 mm long × 3.6 mm wide, and the mounting height after mounting is about 0.4 mm to about 0.6 mm. Further, on the module substrate 10, components such as an LPF (Low Pass Filter) and a crystal resonator may be mounted as necessary.

  As shown in FIGS. 1 to 3, the top plate 30 is disposed on one main surface side of the module substrate 10 so as to cover the electronic component 20.

  Here, in 1st Embodiment, as shown in FIG.2 and FIG.6, the top plate 30 is affixed on the 1st main surface of the flat base material part 31 which has insulation, and the base material part 31. As shown in FIG. The conductive foil 32 and the insulating insulating layer 33 formed on one main surface of the base material portion 31 so as to cover the conductive foil 32 are formed into a composite structure (laminated structure). Moreover, the base material part 31 which comprises the top plate 30 is comprised from the glass epoxy material (glass cloth base material epoxy resin board) which has a thickness of about 0.1 mm, and the conductive foil 32 is about 18 micrometers thick. It is comprised from the copper foil which has. Furthermore, the insulating layer 33 is made of a solder resist, and is formed on one main surface of the base material portion 31 so that the thickness on the conductive foil 32 is about 30 μm. The conductive foil 32 is an example of the “conductive member” in the present invention, and the insulating layer 33 is an example of the “insulating member” in the present invention.

  In the first embodiment, as shown in FIGS. 4 and 5, the top plate 30 (base material portion 31) is formed in a square shape having four sides (outer edges) 34 in a plan view. ing. Specifically, the top plate 30 has a width W2 in the X direction of about 5.6 mm and a length L2 in the Y direction of about 5.6 mm. That is, in the first embodiment, as shown in FIG. 4, the top plate 30 is formed with a smaller planar area than the module substrate 10.

  In the first embodiment, the top plate 30 is configured such that the end of the conductive foil 32 is positioned inside the base material portion 31. Specifically, the conductive foil 32 is formed in a square shape having four sides (outer edges) 32a as viewed in a plan view, and the width W3 in the X direction is about 5. As shown in FIG. In addition to being formed to 6 mm, the length L3 in the Y direction is also formed to about 5.6 mm. And when it sees planarly, each side (outer edge) 32a of the electroconductive foil 32 is located inside each side 34 of the base material part 31 (top plate 30), and the base material part 31 of FIG. A conductive foil 32 is disposed in the center. Further, the top plate 30 is configured as described above, and thus has a predetermined flexibility under the usage environment of the semiconductor module 1.

  As shown in FIG. 2, the top plate 30 configured as described above is fixed by a part of the plurality of electronic components 20 mounted on the module substrate 10 and an elastic member 40 having an elastic function and an adhesive function. ing. Therefore, the elastic member 40 is disposed between the top plate 30 and the electronic component 20. The elastic member 40 is made of a sheet-like epoxy low-elasticity resin having a thickness of about 25 μm to about 100 μm (for example, about 50 μm), and has an elastic modulus of about 1 MPa to about 200 MPa in the environment where the semiconductor module 1 is used. Have. As shown in FIGS. 2 and 6, the sheet-like elastic member 40 is fixed in advance to the entire surface of the other main surface (the surface facing the electronic component 20) of the top plate 30 by thermocompression bonding. The other main surface of the top plate 30 to which the elastic member 40 is fixed is subjected to surface roughening treatment such as argon plasma treatment in order to improve the adhesion between the elastic member 40 and the top plate 30. . By this surface roughening treatment, the other main surface of the top plate 30 is roughened to a roughness (Ra) of about 400 nm.

  As the elastic member 40, for example, a die bonding sheet (die bonding film) used when die-bonding a semiconductor chip can be used. In addition, it is preferable to use a die bonding sheet (die bonding film) having an elastic modulus of about 100 MPa measured by DMA (dynamic viscoelasticity measurement method) in an environment of 23 ° C.

  Further, in the first embodiment, as shown in FIG. 2, the semiconductor element 21 described above is the tallest tall component, and the top plate 30 is fixed to the semiconductor element 21, and the semiconductor element 21. The top plate 30 is also fixed to the electronic component 20 (passive component 22) close to the height. Further, the electronic components 20 (passive components 22) to which the top plate 30 is fixed are distributed in the component mounting area of the module substrate 10.

  As shown in FIG. 4, the top plate 30 has each side (outer edge) 34 of the top plate 30 positioned inside each side (outer edge) 11 of the module substrate 10 when viewed in plan. As described above, the top plate 30 is disposed at the center of the module substrate 10. Specifically, each side (outer edge) 34 of the top board 30 is positioned inward of each side (outer edge) 11 of the module substrate 10 by a distance a of about 0.15 mm (see FIGS. 2 and 4). In addition, a top plate 30 is provided.

  As shown in FIG. 7, the semiconductor module 1 according to the first embodiment configured as described above is moved to the mounting position of the mounting substrate 60 (printed substrate) by the mounter 50 and mounted on the mounting substrate 60.

  In the first embodiment, as described above, by fixing the flat top plate 30 to the electronic component 20 via the elastic member 40 having an elastic function, the semiconductor module 1 is mounted on the mounting substrate 60 such as a printed circuit board. When mounting, the impact received from the mounter 50 can be absorbed by the elastic member 40. For this reason, since the impact load applied to the electronic component 20 can be relieved, load resistance can be improved. Thereby, while being able to suppress the electronic component 20 mounted, it can suppress that the electrical connection of the electronic component 20 and the module board | substrate 10 is interrupted | blocked. As a result, reliability can be improved.

  Moreover, in 1st Embodiment, the shielding effect can be acquired by comprising the top plate 30 so that the electroconductive foil 32 may be included. In addition, although the clearance gap arises between the module board 10 and the top plate 30 by attaching the flat top plate 30, since the space | interval of this clearance space is about 0.4 mm-0.6 mm, it fully shields. An effect can be obtained.

  In the first embodiment, since the top plate 30 is fixed to the electronic component 20, it is not necessary to provide a land on the module substrate 10. For this reason, since it is not necessary to ensure the area | region which forms a land in the module board | substrate 10, size reduction and space saving can be achieved.

  Moreover, in 1st Embodiment, the top plate 30 is made from the flat base material part 31 which consists of glass epoxy materials, the conductive foil 32 affixed on the one main surface of the base material part 31, and conductive foil. The impact resistance of the top plate 30 is improved by constituting a composite structure (laminated structure) including an insulating insulating layer 33 formed on one main surface of the base material portion 31 so as to cover 32. be able to. Thereby, since it can suppress that the thickness of the top plate 30 becomes large, it can respond to the shortening of a module.

  In the first embodiment, the top plate 30 can be formed by using a manufacturing process such as a printed circuit board by configuring the top plate 30 to have the above composite structure. Therefore, the top plate having a shielding function can be easily formed. A plate 30 can be obtained. In addition, when the top plate is constructed from a single resin component as in the conventional semiconductor module, when trying to obtain a shielding effect, the top plate molding completed product is plated in another process or a conductive material. Therefore, there is a disadvantage that the manufacturing process becomes complicated. In this case, since the conductive material having good adhesion to the resin is expensive, there is a disadvantage that the manufacturing cost increases. In addition, when a plating film having good adhesion to the resin is formed, it is necessary to perform a special plating process. In this case as well, there is a disadvantage that the manufacturing cost increases.

  Moreover, in 1st Embodiment, the top plate 30 can have a softness | flexibility by comprising the top plate 30 in the composite structure which has the base material part 31 which consists of glass epoxy materials. For this reason, since the impact load applied to the semiconductor module 1 can be effectively relieved when the top plate 30 is bent, the load resistance can be improved also by this.

  In the first embodiment, the top plate 30 can be manufactured without using a mold by forming the top plate 30 using the base material portion 31 made of a glass epoxy material. The initial cost required for is eliminated. For this reason, since it can suppress that an installation cost increases, the equipment collection expense added to a product cost (manufacturing cost) can be reduced. Thereby, product cost (manufacturing cost) can be reduced.

  Moreover, in 1st Embodiment, when the top plate 30 remove | deviates in the state mounted in the mounting board | substrate 60 by forming the insulating layer 33 which covers the electroconductive foil 32 on the base-material part 31 of the top plate 30. However, it is possible to suppress the occurrence of an electrical short circuit or leakage with peripheral components.

  Further, in the first embodiment, the conductive foil 32 is formed in a plane area smaller than the base material portion 31 and, when viewed in plan, each side (outer edge) 32a of the conductive foil 32 is a top plate. Since the conductive foil 32 is sealed with the insulating layer 33 by disposing the conductive foil 32 so as to be located on the inner side of each side (outer edge) 34 of the 30 (base material portion 31), the mounting substrate Even when the top plate 30 is detached while being mounted on the upper surface 60, it is possible to reliably suppress the occurrence of an electrical short circuit or leakage with peripheral components.

  In the first embodiment, by fixing the sheet-like elastic member 40 to the entire surface of the other main surface of the top plate 30 in advance, the top plate 30 is a semiconductor element that is the tallest tall component. The top plate 30 can also be fixed to the electronic component 20 (passive component 22) close to the height of the semiconductor elements 21 distributed on the module substrate 10. For this reason, since the impact load received from the mounter 50 when mounted on the mounting substrate 60 can be dispersed to the plurality of electronic components 20, the impact load applied to each electronic component 20 can be effectively reduced.

  Further, in the first embodiment, the top plate 30 is formed in a plane area smaller than the module substrate 10, and when viewed in plan, each side (outer edge) 34 of the top plate 30 corresponds to each module substrate 10. By arranging the top plate 30 so as to be located on the inner side of the side (outer edge) 11, for example, dropping in a module assembling process or shaking due to vibration during product transportation in a packaging tray storage state, etc. Thus, even when a strong impact is applied from the side of the semiconductor module 1, it is possible to suppress the impact from being directly applied to the top plate 30. As a result, the mounted electronic component 20 is damaged or the electrical connection between the electronic component 20 and the module substrate 10 is broken due to the strong impact from the side being directly applied to the top plate 30. Or the like can be prevented from occurring. Therefore, the reliability of the semiconductor module 1 can be improved also by this.

  8 to 19 are views for explaining a method of manufacturing a semiconductor module according to the first embodiment of the present invention. Next, a method for manufacturing the semiconductor module 1 according to the first embodiment of the present invention will be described with reference to FIGS.

  First, the flat base material part 31 which consists of a glass epoxy material which has a thickness of about 0.1 mm used for manufacture of a printed circuit board etc. is prepared. Next, a copper foil with an adhesive having a thickness of about 18 μm is thermocompression-bonded on one main surface of the base material portion 31, and this copper foil is patterned into a square shape by etching or the like. As a result, as shown in FIGS. 8 and 9, a plurality of conductive foils 32 made of copper foil are formed in a matrix on the base material portion 31.

  Next, as shown in FIG. 10, a paste-like solder resist is printed on the entire main surface of the base material portion 31 on which the conductive foil 32 is formed using a printing method or the like, and is thermally cured. . Thereby, the insulating layer 33 is formed on one main surface of the base material portion 31 so as to cover the conductive foil 32.

  Subsequently, as shown in FIG. 11, the other main surface of the base material portion 31 is subjected to surface roughening treatment such as argon plasma treatment on the other main surface opposite to the one main surface of the base material portion 31. Is roughened to a roughness (Ra) of about 400 nm. Then, as shown in FIGS. 12 and 13, a sheet-like elastic member 40 (for example, a die bonding sheet) is fixed to the other main surface of the roughened base material portion 31 by thermocompression bonding. In this way, a top plate assembly 30a in which a plurality of top plates 30 are connected is formed. The top plate assembly 30a is in a state where the elastic member 40 is fixed in advance.

  Next, as shown in FIG. 14, a substrate assembly 10a in which a plurality of module substrates 10 are connected is prepared. The substrate assembly 10a is made of a ceramic multilayer substrate, and a component mounting area 10b on which an electronic component 20 (see FIG. 1) is mounted is provided on the upper surface of the substrate assembly 10a. In addition, the board | substrate aggregate | assembly 10a is cut | disconnected by the dicing line P (P1) along the X direction in the subsequent process, and the dicing line P (P2) along the Y direction, and thereby each module board 10 is cut | disconnected. Separated. The component mounting area 10b is provided for each module substrate 10.

  And as shown in FIG. 15, the electronic component 20 is mounted in the component mounting area | region 10b of the board | substrate aggregate | assembly 10a (module board | substrate 10). After that, as shown in FIG. 16, the top plate assembly 30a with the elastic member 40 is fixed to the electronic component 20 (a part of the plurality of electronic components 20) mounted in the component mounting region 10b of the board assembly 10a. . Thereby, as shown in FIG. 17, the top plate assembly 30a is attached to the substrate assembly 10a (see FIG. 16).

  Finally, the individual semiconductor modules 1 are separated into pieces by cutting (dicing) along the dicing lines P (P1, P2) shown in FIG.

  Here, in the first embodiment, as shown in FIG. 18, after the dicing sheet 70 is attached to the back surface side of the substrate assembly 10 a, first, the first dicing blade 80 is used to cut the ceiling on the dicing line P. Only the plate assembly 30a is cut. Next, as shown in FIG. 19, only the substrate aggregate 10 a is cut along the dicing line P using the second dicing blade 90. At this time, by using the first dicing blade 80 for cutting the top plate assembly 30a having a blade thickness larger than that of the second dicing blade 90 for cutting the substrate assembly 10a, the top plate assembly 30a. Is cut so that the cutting width (dicing width) is larger than the cutting width (dicing width) of the substrate assembly 10a. Thereby, as shown in FIGS. 2 and 4, the outer dimension of the top plate 30 is configured to be smaller than the outer dimension of the module substrate 10.

  Thus, the semiconductor module 1 according to the first embodiment of the present invention is manufactured.

  In the manufacturing method of the semiconductor module 1 according to the first embodiment, the top plate 30 and the module substrate 10 can be flow-processed in a sheet state by being configured as described above. can do. For this reason, the semiconductor module 1 can be manufactured with very high manufacturing efficiency.

(Second Embodiment)
FIG. 20 is an overall perspective view of the semiconductor module according to the second embodiment of the present invention. FIG. 21 is a cross-sectional view of a semiconductor module according to the second embodiment of the present invention. Next, referring to FIGS. 20 and 21, in the semiconductor module 100 according to the second embodiment, an opening 33a is formed in a predetermined portion of the insulating layer 33 of the top plate 30 in the configuration of the first embodiment. ing. A part of the conductive foil 32 is exposed to the side opposite to the electronic component 20 through the opening 33a.

  In the semiconductor module 100 according to the second embodiment, as described above, the opening 33a that exposes a part of the conductive foil 32 is formed in a predetermined portion of the insulating layer 33, whereby the conductivity exposed by the opening 33a is formed. A ground shield effect can be easily obtained by electrically connecting a part of the foil 32 and, for example, a ground portion of an electronic device (not shown) on which the semiconductor module 100 is mounted.

  Other effects of the second embodiment are the same as those of the first embodiment.

  22 to 24 are sectional views showing mounting examples of the semiconductor module according to the second embodiment of the present invention. 22 shows a first implementation example, FIG. 23 shows a second implementation example, and FIG. 24 shows a third implementation example. Next, a mounting example of the semiconductor module 100 according to the second embodiment of the present invention will be described with reference to FIGS.

  In the first mounting example of the semiconductor module 100 according to the second embodiment, as shown in FIG. 22, the semiconductor module 100 is mounted on the mounting substrate 60, and the exterior 102 of the electronic device is formed by the conductive elastic member 101. A part of the conductive foil 32 exposed by the opening 33a is electrically connected to the grounding conductor layer 102a formed in the above. Thereby, since the electric potential of the conductive foil 32 of the top plate 30 can be set to the same electric potential as the GND electric potential, a ground shield effect can be obtained.

  As the conductive elastic member 101, for example, a conductive die bonding sheet, or a conductive paste made of an epoxy material containing Ag filler or various metal fillers can be used.

  In the second mounting example of the semiconductor module 100 according to the second embodiment, as shown in FIG. 23, the conductive spring member 111 having a spring function is used in a state where the semiconductor module 100 is mounted on the mounting substrate 60. A part of the conductive foil 32 exposed by the opening 33a is electrically connected to the grounding conductor layer 102a formed on the exterior 102 of the electronic device.

  In the third mounting example of the semiconductor module 100 according to the second embodiment, as shown in FIG. 24, the semiconductor module 100 is mounted on the mounting substrate 60 by the conductive lead wires 121 in a state where the semiconductor module 100 is mounted on the mounting substrate 60. A part of the conductive foil 32 exposed through the opening 33a is electrically connected to the formed grounding conductor layer 60a. The conductive lead 121 is fixed by a conductive material 122 (for example, a conductive adhesive, solder, etc.).

(Third embodiment)
FIG. 25 is an overall perspective view of the semiconductor module according to the third embodiment of the present invention. FIG. 26 is a cross-sectional view of a semiconductor module according to a third embodiment of the present invention. FIG. 27 is a cross-sectional view of the top plate of the semiconductor module according to the third embodiment of the present invention. Next, with reference to FIGS. 25-27, the semiconductor module 200 by 3rd Embodiment of this invention is demonstrated.

  In the semiconductor module 200 according to the third embodiment, an opening 33a that exposes a part of the conductive foil 32 is formed in a predetermined portion of the insulating layer 33 of the top plate 30 as in the second embodiment. Moreover, in 3rd Embodiment, as shown in FIG.25 and FIG.26, the top plate 30 is being fixed upside down. That is, in the third embodiment, the top plate 30 is fixed so that the opening 33a of the insulating layer 33 is located on the electronic component 20 side.

  As shown in FIGS. 26 and 27, the elastic member 40 is fixed to one main surface of the top plate 30. An opening 40 a that exposes a part of the conductive foil 32 is also formed in a predetermined portion of the elastic member 40. In the third embodiment, a surface roughening process is performed on one main surface (a surface facing the electronic component 20) of the top plate 30.

  In the third embodiment, a semiconductor element 221 (20) made of a Si penetration device (WL-CSP) that can be three-dimensionally mounted is mounted on the module substrate 10. In this semiconductor element 221, a through via 221a penetrating a semiconductor chip (Si chip) is formed, and a conductor 221b formed on the upper surface side of the semiconductor element 221 and a solder ball 221c provided on the lower surface side, It is electrically connected through the through via 221a. A part of the solder ball 221 c of the semiconductor element 221 is electrically connected to the ground line 12 a (12) of the module substrate 10. On the other hand, the conductor 221b formed on the upper surface side of the semiconductor element 221 is electrically connected to the conductive foil 32 via the conductive elastic member 240 in a state where the top plate 30 is fixed. As the conductive elastic member 240, for example, a conductive die bonding sheet, a conductive paste made of an epoxy material containing Ag filler or various metal fillers, or the like can be used.

  Other configurations of the third embodiment are the same as those of the first and second embodiments.

  In the third embodiment, as described above, the top plate 30 is disposed so that the opening 33a of the insulating layer 33 is on the electronic component 20 side, and a part of the conductive foil 32 exposed by the opening 33a. Can be electrically connected to the ground line 12a (12) of the module substrate 10 through the through via 221a of the semiconductor element 221. Thereby, the electric potential of the conductive foil 32 of the top plate 30 can be set to the same electric potential as the electric potential (GND electric potential) of the ground line 12a (12) of the module substrate 10. Therefore, the ground shield effect can be obtained even with this configuration.

  Other effects of the third embodiment are the same as those of the first and second embodiments.

(Fourth embodiment)
FIG. 28 is an overall perspective view of the semiconductor module according to the fourth embodiment of the present invention. FIG. 29 is a plan view of a semiconductor module according to a fourth embodiment of the present invention. FIG. 30 is a cross-sectional view of a semiconductor module according to a fourth embodiment of the present invention. Next, with reference to FIGS. 28-30, the semiconductor module 300 by 4th Embodiment of this invention is demonstrated.

  In the semiconductor module 300 according to the fourth embodiment, the top plate 30 is fixed upside down as in the third embodiment. That is, in the fourth embodiment, as shown in FIG. 30, the top plate 30 is fixed so that the opening 33b of the insulating layer 33 is located on the electronic component 20 side.

  In the fourth embodiment, a plurality of the openings 33 b are formed in the insulating layer 33. Specifically, as shown in FIG. 28 and FIG. 29, openings 33 b that expose a part of the conductive foil 32 are formed at the four corners (periphery) of the top plate 30.

  In addition, as shown in FIG. 30, chip-type passive components 22 (20) are mounted in a vertically placed state in regions located below the openings 33b in the module substrate 10, respectively. Further, at least one of the plurality of passive components 22 placed vertically is mounted on the ground line 12 a (12) of the module substrate 10. The passive component 22 mounted on the ground line 12a (12) is composed of a resistance element having a low resistance (100 mΩ or less) between the upper and lower electrodes. Further, the remaining passive components 22 of the plurality of passive components 22 (20) placed vertically are mounted on the power supply line 12 b (12) of the module substrate 10. The passive component 22 is composed of a capacitor having a capacity of about 0.01 μF to 0.1 μF.

  Then, with the top plate 30 fixed, the conductive foil 32 of the top plate 30 and the passive component 22 mounted in a vertically placed state are electrically connected to each other via a conductive elastic member 240. Has been. That is, one electrode 22a of the passive component 22 mounted in the vertical state is electrically connected to the ground line 12a (12) or the power supply line 12b (12), and the passive component mounted in the vertical state. The other electrode 22 a of 22 is electrically connected to the conductive foil 32 via a conductive elastic member 240.

  Other configurations of the fourth embodiment are the same as those of the first to third embodiments.

  In the fourth embodiment, as described above, the passive component 22 composed of a low-resistance resistive element mounted in a vertical state on the ground line 12 a (12) of the module substrate 10 and the conductive foil 32 of the top plate 30. Are electrically connected to each other, the potential of the conductive foil 32 of the top board 30 can be made substantially the same as the potential (GND potential) of the ground line 12a (12) of the module substrate 10. Therefore, the ground shield effect can be obtained thereby.

  Moreover, in 4th Embodiment, the passive component 22 which consists of the capacitor | condenser mounted vertically on the power supply line 12b (12) of the module board 10 and the conductive foil 32 of the top plate 30 are electrically connected. Therefore, it can function as a bypass capacitor.

  In the fourth embodiment, the electronic component 20 (22) can be three-dimensionally mounted by configuring as described above, so that the module can be reduced in size and saved in space. Further, by configuring as described above, the top plate 30 can be supported by the passive component 22 mounted in a vertically placed state, so that the number of components can be minimized, and further downsizing / Low profile can be achieved.

  Other effects of the fourth embodiment are the same as those of the first to third embodiments.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the first to fourth embodiments, an example using a module substrate made of a ceramic multilayer substrate has been shown. However, the present invention is not limited to this, and a module substrate other than the ceramic multilayer substrate may be used. For example, a module substrate made of a multilayer resin substrate may be used.

  Moreover, although the example which used the die bonding sheet | seat for the elastic member was shown in the said 1st-4th embodiment, this invention is not restricted to this, If it is an elastic member which has a desired elastic function, die bonding sheet | seat Members other than (die bonding film) may be used as the elastic member. For example, the elastic member may be formed on the top plate by printing the entire surface of the epoxy paste on the top plate.

  Moreover, although the example which used the glass epoxy material as a base-material part of a top plate was shown in the said 1st-4th embodiment, this invention is not limited to this, The base-material part of a top plate is a glass epoxy material. You may be comprised from materials other than. Examples of the material other than the glass epoxy material include a polyimide film material.

  Moreover, in the said 1st-4th embodiment, although the thickness of the base-material part of a top plate showed about 0.1 mm, this invention is not restricted to this, It is the thickness which has desired flexibility. If present, the thickness of the base material portion may be a thickness other than 0.1 mm. Moreover, the thickness of conductive foil and the thickness of an insulating layer can be changed suitably.

  Moreover, although the example which used copper foil for the electroconductive foil of the top plate was shown in the said 1st-4th embodiment, this invention is not restricted to this, Metal foil other than copper foil is used for electroconductivity of a top plate. It can also be used as a foil. For example, aluminum foil or the like can be used as the conductive foil of the top plate.

  In the first to fourth embodiments, the example in which the semiconductor element made of WL-CSP is mounted on the module substrate is shown. However, the present invention is not limited to this, and a semiconductor element other than WL-CSP is mounted on the module substrate. Can also be implemented.

  Moreover, in the said 1st-4th embodiment, although the example which roughened the surface of the top plate by argon plasma processing was shown, this invention is not restricted to this, Using surface roughening processing methods other than argon plasma processing The top plate may be roughened. For example, the surface of the top plate may be roughened using a sandblast method (alumina powder spraying) or the like. Moreover, the surface roughness of the top plate by the surface roughening treatment may be a roughness that can satisfactorily fix the top plate and the elastic member, and may be a roughness other than 400 nm.

  In the first to fourth embodiments, the shape and dimensions of the semiconductor module, the circuit configuration, and the like can be changed as appropriate.

  In the second embodiment, three mounting examples are shown as mounting examples of the semiconductor module. However, the present invention is not limited to this, and the semiconductor module may be mounted in a form other than the three mounting examples described above. Good.

1 is an exploded perspective view of a semiconductor module according to a first embodiment of the present invention. It is sectional drawing of the semiconductor module by 1st Embodiment of this invention. 1 is an overall perspective view of a semiconductor module according to a first embodiment of the present invention. 1 is a plan view of a semiconductor module according to a first embodiment of the present invention. It is a top view of the top plate of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing along the BB line of FIG. It is sectional drawing which showed the state which mounted the semiconductor module by 1st Embodiment of this invention on the mounting board | substrate. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is a top view for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is a top view for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is a top view for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor module by 1st Embodiment of this invention. It is a whole perspective view of the semiconductor module by a 2nd embodiment of the present invention. It is sectional drawing of the semiconductor module by 2nd Embodiment of this invention. It is sectional drawing which showed the 1st mounting example of the semiconductor module by 2nd Embodiment of this invention. It is sectional drawing which showed the 2nd mounting example of the semiconductor module by 2nd Embodiment of this invention. It is sectional drawing which showed the 3rd mounting example of the semiconductor module by 2nd Embodiment of this invention. It is a whole perspective view of the semiconductor module by a 3rd embodiment of the present invention. It is sectional drawing of the semiconductor module by 3rd Embodiment of this invention. It is sectional drawing of the top plate of the semiconductor module by 3rd Embodiment of this invention. It is a whole perspective view of the semiconductor module by 4th Embodiment of this invention. It is a top view of the semiconductor module by a 4th embodiment of the present invention. It is sectional drawing of the semiconductor module by 4th Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor module by an example of the past. It is sectional drawing which showed the structure of the semiconductor module by an example of the past.

Explanation of symbols

1, 100, 200, 300 Semiconductor module 10 Module substrate (substrate)
11 One side (outer edge) of module board
DESCRIPTION OF SYMBOLS 12 Wiring conductor 12a Ground line 12b Power supply line 13 Electrode terminal 20 Electronic component 21, 221 Semiconductor element 22 Passive component 30 Top plate 31 Base material part 32 Conductive foil (conductive member)
30a One side of conductive foil (outer edge)
33 Insulating layer (insulating material)
33a, 33b Opening 34 One side of top plate (outer edge)
40 elastic member 50 mounter 80 first dicing blade 90 second dicing blade 101 conductive elastic member 111 spring member 121 conductive lead wire 240 conductive elastic member

Claims (16)

A board on which electronic components are mounted on one main surface;
A flat top plate disposed on one main surface side of the substrate and covering the electronic component;
An elastic member having an elastic function disposed between the top plate and the electronic component;
The top plate includes a conductive member, and is fixed to the electronic component by the elastic member. The conductive member is a conductive foil,
The semiconductor module according to claim 1, wherein the top plate has a composite structure including an insulating base material portion and the conductive foil formed on the base material portion. .   The semiconductor module according to claim 2, wherein the base portion of the top plate is made of a glass epoxy material, and the conductive foil of the top plate is made of a copper foil. In the top plate,
The conductive foil has a smaller planar area than the base material part,
The conductive foil is arranged so that the outer edge of the conductive foil is located inside the outer edge of the base portion when viewed in a plan view. The semiconductor module described in 1.   The semiconductor module according to claim 1, wherein the elastic member is formed in a sheet shape having a predetermined thickness, and is fixed to the top plate in advance.   The semiconductor module according to claim 1, wherein the elastic member is made of an epoxy-based low-elasticity resin. A plurality of the electronic components are mounted on the substrate,
The elastic member is fixed to the entire surface of the top plate facing the electronic component,
The semiconductor module according to claim 1, wherein the top plate is fixed to at least a part of the plurality of electronic components.   8. The semiconductor module according to claim 1, wherein a surface of the top plate facing the electronic component is subjected to a surface roughening process. 9.   The semiconductor module according to claim 1, wherein the top plate has flexibility. The top plate has a smaller plane area than the substrate,
10. The top plate according to claim 1, wherein the top plate is arranged so that an outer edge of the top plate is positioned inside an outer edge of the substrate when viewed in a plan view. 2. The semiconductor module according to item 1.   The semiconductor module according to claim 1, wherein the top plate further includes an insulating member that covers the conductive member.   The semiconductor module according to claim 11, wherein the insulating member has an opening exposing a part of the conductive member.   The semiconductor module according to claim 12, wherein the top plate is disposed so that the opening is located on the side opposite to the electronic component.   The semiconductor module according to claim 12, wherein the top plate is disposed so that the opening is positioned on the electronic component side.   The semiconductor module according to claim 14, wherein a part of the conductive member exposed through the opening is electrically connected to the electronic component.   The semiconductor module according to claim 12, wherein a plurality of the openings are formed in the insulating member.

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