JP2010258319A - Wiring board and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board which complies with the demand for improvement in reliability. <P>SOLUTION: The wiring board 3 includes a base 7 having a through-hole T, a through-hole conductor 9 formed in the through-hole T, and a ceramic structure 8 interposed between the base 7 and the through-hole conductor 9. The method of manufacturing the wiring board 3 includes the steps of: preparing the base 7 having the through-hole T; coating an inner wall of the through-hole T with ceramic sol containing ceramic particles and a solvent; forming the ceramic structure 8 including ceramic particles by drying the solvent; and forming the through-hole conductor 9 in the through-hole T. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a wiring board used for an electronic device (for example, various audiovisual devices, home appliances, communication devices, computer devices, and peripheral devices thereof) and a manufacturing method thereof.

  2. Description of the Related Art Conventionally, as a mounting structure in an electronic device, an electronic component mounted on a wiring board is used.

  Regarding a wiring board, Patent Document 1 discloses a configuration in which a resin base having carbon fibers and a plurality of through-hole conductors penetrating the base are provided, and a resin is interposed between the base and the through-hole conductor. Has been.

  However, in such a wiring board, when an electric field is applied between the through-hole conductors, the conductive material contained in the through-hole conductors may ionize and penetrate into the resin structure due to moisture contained in the resin. Yes (ion migration). As a result, the carbon fiber in the substrate and the through-hole conductor are short-circuited, and as a result, the through-hole conductors are short-circuited, and the reliability of the wiring board tends to be lowered.

  Even if the substrate does not contain carbon fibers, or the substrate is made of a material other than resin, if ion migration occurs, the gap between the through-hole conductors via gaps or porous in the substrate Insulation may decrease. Therefore, it is required to improve the insulation between the through-hole conductors.

JP 2004-289114 A

  The present invention provides a wiring board that meets the demand for improved reliability.

  A wiring board according to an embodiment of the present invention includes a base body having a through hole, a through hole conductor formed in the through hole, a ceramic structure interposed between the base body and the through hole conductor, Is provided.

  A method of manufacturing a wiring board according to an aspect of the present invention includes a step of preparing a substrate having a through hole, a step of applying a ceramic sol containing ceramic particles and a solvent to the inner wall of the through hole, and drying the solvent. Thereby forming a ceramic structure having the ceramic particles, and forming a through-hole conductor in the through-hole.

  According to the wiring board according to one aspect of the present invention, the insulation between the base and the through-hole conductor can be improved. As a result, a highly reliable wiring board can be obtained.

It is sectional drawing of the mounting structure concerning 1st Embodiment of this invention. 2a, 2b, and 2c are cross-sectional views illustrating a manufacturing process of the mounting structure shown in FIG. 3a, 3b, and 3c are cross-sectional views illustrating a manufacturing process of the mounting structure shown in FIG. FIG. 4A is a cross-sectional view illustrating a manufacturing process of the mounting structure shown in FIGS. It is sectional drawing of the mounting structure concerning 2nd Embodiment of this invention. It is sectional drawing of the mounting structure concerning 3rd Embodiment of this invention.

(First embodiment)
Hereinafter, a mounting structure including a wiring board according to a first embodiment of the present invention will be described in detail based on the drawings.

  The mounting structure 1 shown in FIG. 1 is used for electronic devices such as various audiovisual devices, home appliances, communication devices, computer devices, and peripheral devices thereof. The mounting structure 1 includes an electronic component 2 and a wiring board 3.

  The electronic component 2 is a semiconductor element such as an IC or LSI, and is flip-chip mounted on the wiring substrate 3 via conductive bumps 4 such as solder. The base material of the electronic component 2 is formed of a semiconductor material such as silicon, germanium, gallium arsenide, gallium arsenide phosphorus, gallium nitride, or silicon carbide. As the electronic component 2, for example, one having a thickness of 0.1 mm or more and 1 mm or less can be used.

  The wiring substrate 3 includes a core substrate 5 and a pair of wiring layers 6 formed on both sides of the core substrate 5.

  The core substrate 5 is intended to conduct electricity between the pair of wiring layers 6 while maintaining the strength of the wiring substrate 3, and has a thickness dimension of, for example, 0.3 mm to 1.5 mm. The core substrate 5 includes a base body 7, a through hole T, a ceramic structure 8, a resin structure 9, a through hole conductor 9, and an insulator 10.

  The base body 7 is formed by laminating a plurality of resin layers 11. The resin layer 11 includes a resin portion 12 and a base material 13 covered with the resin portion 12. The coefficient of thermal expansion of the substrate 7 is set to, for example, 1 ppm / ° C. or more and 16 ppm / ° C. or less. Such a coefficient of thermal expansion conforms to ISO11359-2: 1999.

  As resin which comprises the resin part 12, a polyimide resin, aromatic liquid crystal polyester resin, polyetheretherketone resin, or polyetherketone resin etc. can be used, for example.

  The base material 13 covered with the resin part 12 is for increasing the strength of the resin layer 11, and for example, a woven fabric in which a plurality of fibers such as glass fibers, resin fibers, carbon fibers or metal fibers are woven vertically and horizontally. Can be used. As glass fiber, what was formed with E glass or S glass etc. can be used. Moreover, as resin fiber, what was formed with polyparaphenylene benzbisoxazole resin, wholly aromatic polyamide resin or wholly aromatic polyester resin, etc. can be used. Further, as the carbon fiber, a PAN-based carbon fiber or a pitch-based carbon fiber can be used. Moreover, as a metal fiber, what was formed from iron, nickel, etc. can be used.

  A plurality of through holes T are formed in the base 7, a through hole conductor 9 is formed inside the through hole T, and a ceramic structure 8 is provided between the through hole T and the through hole conductor 9. Is intervened.

  The through hole T penetrates the core substrate 5 in the thickness direction (Z direction), and is formed in a columnar shape having a diameter of 0.1 mm to 1 mm, for example.

  The ceramic structure 8 is formed along the inner wall of the through hole T. The ceramic structure 8 has, for example, a plurality of bonded ceramic particles. As the ceramic structure 8, for example, one formed of a ceramic material such as silicon oxide, aluminum oxide, boron oxide, magnesium oxide or calcium oxide can be used. The thickness of the ceramic structure 8 from the base 7 side to the through-hole conductor 9 side is set to, for example, 0.5 μm or more and 15 μm or less.

  The through-hole conductor 9 electrically connects the upper and lower wiring layers 6 of the core substrate 5 and is formed along the inner wall of the ceramic structure 8. As the through-hole conductor 9, for example, a conductor formed of a conductive material such as copper, silver, gold, aluminum, nickel, or chromium can be used. The through-hole conductor 9 is set to have a thickness from 5 μm to 20 μm, for example, from the base 7 side to the center portion side of the through-hole T. The thermal expansion coefficient of the through-hole conductor 9 is set to, for example, 14 ppm / ° C. or more and 18 ppm / ° C. or less.

  The insulator 10 is for filling the remaining space surrounded by the through-hole conductor 9. As a result, a via conductor 16 to be described later can be formed immediately above and immediately below the insulator 10, so that the wiring board 3 can be downsized. As the insulator 10, for example, a material formed of a resin material such as polyimide resin, acrylic resin, epoxy resin, cyanate resin, fluorine resin, silicon resin, polyphenylene ether resin, or bismaleimide triazine resin can be used.

  By the way, the above-described through-hole conductor 9 has a function as, for example, a power supply wiring or a signal wiring. Such through-hole conductors 9 may have different voltages at adjacent through-hole conductors 9, and an electric field may be generated between the adjacent conductors.

  On the other hand, in the wiring board 3 of the first embodiment, the ceramic structure 8 is interposed between the base body 7 and the through-hole conductor 9. Since the ceramic structure 8 is composed of low molecules compared to the resin, it is difficult to absorb moisture, so that ion migration of the through-hole conductor 9 to the base body 7 is reduced. As a result, the insulation between the base body 7 and the through-hole conductor 9 can be improved, and the reliability of the wiring board 3 can be improved.

  Further, by reducing the ion migration, the conductive material contained in the through-hole conductor 9 can be prevented from penetrating into the gap between the adjacent resin layers 11 and the gap between the resin portion 12 and the base material 13. Short circuit between the hole conductors 9 can be reduced.

  Further, by reducing the ion migration, the contact of the conductive material contained in the through-hole conductor 9 with the fiber on the inner wall of the base 7 is reduced. Such an effect is particularly effective when the base material 13 is formed of highly conductive fibers, and the short circuit between the through-hole conductors 9 through the base material 13 can be reduced. As such a highly conductive fiber, carbon fiber or metal fiber can be used.

  The ceramic particles constituting the ceramic structure 8 are preferably spherical. As a result, by densifying the internal structure of the ceramic structure 8, it is possible to reduce the intrusion of the conductive material constituting the through-hole conductor 8 into the ceramic structure 8 and to improve the mechanical strength of the ceramic structure 8. Can be made.

  The ceramic structure 8 is preferably formed along the through direction of the through hole T. Further, it is desirable to form along the circumferential direction of the through hole T. As a result, the intervening region by the ceramic structure 8 can be increased, and the insulation between the base 7 and the through-hole conductor 9 can be improved.

  In the ceramic structure 8, it is desirable that the thickness from the base 7 side to the through-hole conductor 9 side in the opening of the through-hole T is larger than other portions. As a result, the stress applied to the through-hole conductor 9 located in the opening is reduced by increasing the thickness of the ceramic structure 8 in the opening of the through-hole T where stress tends to concentrate. The generation of cracks in can be reduced. In addition, as for the ceramic structure 8, it is desirable for the thickness in the opening part of the through-hole T to be set to 1.0 times or more 1.3 times or less of the site | part with the smallest thickness. Further, it is desirable that the ceramic structure 8 has a smaller thickness from the opening of the through hole T toward the inside of the base body 7.

  The ceramic structure 8 desirably has a plurality of convex portions on the surface on the through-hole conductor 9 side. As a result, by embedding the convex portion in the through-hole conductor 9, the adhesion between the ceramic structure 8 and the through-hole conductor 9 can be improved, and the peeling between the two can be reduced.

  The ceramic particles included in the ceramic structure 8 include first ceramic particles that constitute a structural portion of the ceramic structure 8 and second ceramic particles that constitute a convex portion, and the particle diameter of the second ceramic particles is: Desirably larger than the first ceramic particles. As a result, the first ceramic particles having a small particle diameter make the internal structure of the ceramic structure 8 dense, and the second ceramic particles having a large particle diameter form a convex portion to form a ceramic structure 8 and a through hole. Adhesiveness with the conductor 9 can be improved.

  As the first ceramic particles and the second ceramic particles, those formed from the ceramic material constituting the ceramic particles described above can be used. In particular, the ceramic materials constituting the first ceramic particles and the second ceramic particles are desirably the same material or a material forming a compound. As a result, chemical bonding occurs at the contact portion between the first ceramic particles and the second ceramic particles, and the adhesion between them can be strengthened.

  The particle diameter of the first ceramic particles is preferably set to 3 nm or more and 50 nm or less. Moreover, it is desirable that the particle diameter of the second ceramic particles is set to 50 nm or more and 300 nm or less. Moreover, it is desirable that the particle diameter of the second ceramic particles is set to be 2 to 10 times that of the first ceramic particles.

  It is desirable that the first ceramic particles constituting the structural portion of the ceramic structure 8 are embedded in the concave and convex recesses constituted by the resin portion 12 and the base material 13 on the inner wall of the through hole T. As a result, the adhesiveness between the ceramic structure 8 and the base body 7 can be improved.

  The ceramic structure 8 desirably has a coefficient of thermal expansion of 1 ppm / ° C. or higher and 15 ppm / ° C. or lower. As a result, the thermal stress caused by the difference in the coefficient of thermal expansion between the base body 7 and the through-hole conductor 7 can be relaxed. As the ceramic structure 8 having such a thermal expansion coefficient, one formed from a ceramic material such as silicon oxide, aluminum oxide, boron oxide, magnesium oxide or calcium oxide can be used.

  The ceramic structure 8 preferably has a dielectric loss tangent of 0.001 or more and 0.01 or less. As a result, the transmission characteristic of the high frequency signal in the through-hole conductor 9 can be improved. As such a dielectric loss tangent ceramic structure 8, one formed from a ceramic material such as silicon oxide, aluminum oxide, boron oxide, magnesium oxide or calcium oxide can be used. The dielectric loss tangent conforms to JISK6911: 1995.

  On the other hand, the wiring layer 6 provided on both sides of the core substrate 5 includes an insulating layer 14, a conductive layer 15, a via hole V, and a via conductor 16. The conductive layer 15 and the via conductor 16 are electrically connected to each other and constitute a wiring part. The wiring portion includes a power supply wiring or a signal wiring.

  The insulating layer 14 is for ensuring insulation of portions other than the wiring portion in the wiring layer 6, and is formed to have a thickness of, for example, 1 μm or more and 15 μm or less. The insulating layer 14 is formed of, for example, polyimide resin, acrylic resin, epoxy resin, urethane resin, cyanate resin, silicon resin, bismaleimide triazine resin, liquid crystal polymer, polybenzoxazole resin, or polyimide benzoxazole resin. Can be used.

  The conductive layer 15 constitutes a wiring portion together with a via conductor 16 described later, and is separated from each other in the thickness direction of the wiring substrate 3. As the conductive layer 15, for example, a layer formed of a metal material such as copper, silver, gold, aluminum, nickel, or chromium can be used.

  The via hole V is a portion where the via conductor 16 is formed, and penetrates the insulating layer 14 in the thickness direction (Z direction). The via hole V is formed in a tapered shape having a narrow width toward the core substrate 5, for example.

  The via conductor 16 connects the conductive layers 15 separated in the thickness direction of the wiring board 2 to each other, and is formed in the via hole V. As the via conductor 16, for example, a conductor formed of a conductive material such as copper, silver, gold, aluminum, nickel or chromium can be used.

  Thus, the mounting structure 1 described above exhibits a desired function by driving or controlling an electronic component based on a power supply or a signal supplied via the wiring board 3.

  Next, the manufacturing method of the mounting structure 1 mentioned above is demonstrated based on FIGS.

  (1) As shown in FIG. 2a, a base 7 is prepared by laminating a plurality of resin layers 11. The base body 7 can be produced, for example, by laminating a plurality of resin sheets including an uncured resin and the base material 13 and heating and pressing. The uncured resin is cured to become the resin 12 by heating and pressing, and the resin sheet becomes the resin layer 11. The uncured state is an A-stage or B-stage according to ISO 472: 1999.

  (2) As shown in FIG. 2b, a plurality of through holes T penetrating the base 7 in the thickness direction are formed. The through hole T can be formed by, for example, drilling or laser processing.

  (3) As shown in FIG. 2 c, the ceramic structure 8 is formed on the inner wall of the through hole T. The ceramic structure 8 can be formed as follows, for example. First, a first ceramic sol containing first ceramic particles and a solvent is prepared. Next, the first ceramic sol is applied to the inner wall of the through hole T. Next, the first ceramic sol is dried to evaporate the solvent. As a result, the first ceramic particles adhered to the inner wall of the through hole T remain, and the ceramic structure 8 having the first ceramic particles can be formed.

  The first ceramic sol preferably contains 1% to 50% of the first ceramic particles and 50% to 98% of the solvent. As a result, by including 1% or more of the first ceramic particles, the internal structure of the ceramic structure 8 can be made dense and thick. Further, by containing 50% or more of the solvent, when applying the first ceramic sol, the possibility of the first ceramic sol blocking the inside of the through-hole T due to the increase in viscosity is reduced, and only the inner wall is efficient. Can adhere well.

  The first ceramic particles are made of a ceramic material constituting the ceramic structure 8. The first ceramic particles are preferably spherical. As a result, when the solvent is evaporated, the first ceramic particles can be densely aggregated, so that the first ceramic particles attached to the inner wall of the through hole T can be efficiently left.

  In addition, the particle diameter of the first ceramic particles is preferably set to 3 nm or more and 50 nm or less. By setting the particle diameter of the first ceramic particles to 3 nm or more, the viscosity of the first ceramic sol can be reduced and the productivity can be improved. Further, by setting the particle diameter of the first ceramic particles to 50 nm or less, as described later, the first ceramic particles attached to the inner wall of the through hole T are mutually bonded at a temperature lower than the thermal decomposition temperature of the resin portion 12. Can be combined.

  As the solvent, for example, a solvent containing an organic solvent such as methanol, isopropanol, methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethyl ether or dimethylacetamide can be used. Among these, it is desirable to use one containing methanol or propylene glycol monomethyl ether. As a result, the first ceramic sol can be uniformly applied and the solvent can be efficiently evaporated.

  Application | coating of a 1st ceramic sol can be performed as follows, for example. First, the first ceramic sol is filled in the through hole T. Such filling can be selectively performed only in the through hole T using, for example, a mask. Next, by blowing air to the filled first ceramic sol, by removing another part of the first ceramic sol so that a part of the first ceramic sol remains on the inner wall of the through hole T, A first ceramic sol can be applied.

  The first ceramic sol can be dried in an inert gas such as nitrogen gas. Here, it is desirable to heat the ceramic structure 8 during or after the drying of the first ceramic sol. As a result, the first ceramic particles can be bonded to each other. Here, when the particle diameter of the first ceramic particles is set to 50 nm or less, the first ceramic particles can be bonded to each other by heating the ceramic structure 8 below the thermal decomposition temperature of the resin portion 12. . This is because the first ceramic particles have an extremely small particle size of 50 nm or less, and the atoms of the first ceramic particles, particularly the atoms on the surface, actively move. Is presumed to be due to the binding. By bonding the first ceramic particles in this manner, the mechanical strength of the ceramic structure 8 can be improved while reducing damage to the resin portion 12 due to heating.

  Moreover, since 1st ceramic particle | grains can be couple | bonded at low temperature, crystallization of 1st ceramic particle | grains can be reduced and the ratio of an amorphous state can be raised. As a result, the first ceramic particles can reduce the occurrence of cracks by reducing the anisotropy of the thermal expansion coefficient due to the crystal structure anisotropy. In particular, when silicon oxide is used as the ceramic material of the first ceramic particles, crystallization of the first ceramic particles can be effectively reduced. Further, since the heating is performed at a low temperature, the stress generated during the heating due to the difference in thermal expansion between the first ceramic particles and the substrate 7 is reduced, and cracks and peeling due to the stress can be prevented.

  Here, after the first ceramic sol is applied to the inner wall of the through hole T and dried, it is desirable to apply the second ceramic sol containing the second ceramic particles and the solvent to the surface of the ceramic structure 8. As a result, a plurality of convex portions made of the second ceramic particles can be formed on the surface of the ceramic structure 8 on the through-hole conductor 9 side.

  The particle diameter of the second ceramic particles is preferably larger than the particle diameter of the first ceramic particles. In particular, the particle diameter of the second ceramic particles is preferably set to be not less than 2 times and not more than 10 times that of the first ceramic particles, and is preferably set to be greater than 50 nm and less than or equal to 300 nm, for example. As a result, when the second ceramic sol is dried, the second ceramic particles partially remain on the surface of the ceramic structure 8 due to the size of the particle diameter, so that the convex portions can be efficiently formed. In addition, the convex portion can be formed large.

  When applying the second ceramic sol, it is desirable to heat the ceramic structure 8 as follows. First, the first ceramic particles are applied to the inner wall of the through hole T and dried. Next, the second ceramic particles are applied to the surface of the ceramic structure 8 and dried without heating the ceramic structure 8 composed of the first ceramic particles. Next, the ceramic structure 8 constituted by the first ceramic particles and the second ceramic particles is heated. By heating the ceramic structure 8 in this manner, the first ceramic particles and the second ceramic particles can be combined, and the adhesive strength between the structure portion and the convex portion of the ceramic structure 8 can be improved. .

  (4) As shown in FIG. 3A, a cylindrical through-hole conductor 9 is formed by depositing a conductive material on the inner wall of the ceramic structure 8. In addition, a conductive material is deposited on the upper surface and the lower surface of the base 7 to form a conductive material layer 15x. The conductive material is deposited by, for example, electroless plating, vapor deposition, CVD, or sputtering. Of these, it is desirable to use electroless plating or sputtering.

  Here, in the case of performing electroless plating in the step (3), the ceramic structure 8 on which the conductive material is deposited is formed of a ceramic material, and therefore, for example, compared with a case where a resin material is used. It is difficult to be damaged by various chemicals such as plating solution, etching solution or cleaning solution. As a result, compared to the case where a resin material is used, the residual of various chemicals between the ceramic structure 8 and the through-hole conductor 9 can be reduced, so that cracks in the ceramic structure 8 due to residual chemicals are reduced. As a result, the penetration of the conductive material constituting the through-hole conductor 9 into the crack can be reduced, and the insulation between the base 7 and the through-hole conductor 9 can be improved.

  Further, in the step (3), when a convex portion is formed on the surface of the ceramic structure 8 on the through-hole conductor 9 side, the convex portion is covered with a conductive material. Can be formed.

  (5) As shown in FIG. 3b, the inside of the cylindrical through-hole conductor 9 is filled with a resin material or the like to form the insulator 10.

  (6) As shown in FIG. 3c, after the conductive material is deposited on the exposed portion of the insulator 10, the conductive layer material layer 15x is patterned to form the conductive layer 15. The conductive material is deposited by, for example, an electroless plating method, a vapor deposition method, a CVD method, or a sputtering method. The patterning of the conductive material layer 15x is performed using, for example, a conventionally known photolithography technique, etching, or the like.

  The core substrate 5 can be manufactured as described above.

  (7) As shown in FIG. 4 a, wiring parts 6 are formed on both surfaces of the core substrate 5. The wiring part 6 can be formed as follows, for example.

  First, the insulating layer 14 is formed over the conductive layer 15. The insulating layer 14 is formed, for example, by placing an insulating sheet on the conductive layer 15 via an adhesive and heating and pressurizing using a heating press.

  Next, a via hole V is formed in the insulating layer 14, and at least a part of the conductive layer 15 is exposed in the via hole V. For example, a YAG laser device or a carbon dioxide gas laser device is used to form the via hole V. The via hole V can be formed so that the opening width becomes narrower toward the core substrate 5 by adjusting the output of the laser beam.

  Next, by forming the via conductor 13 in the via hole V and forming the conductive layer 15 on the upper surface of the insulating layer 14, the wiring part 6 can be formed. The via conductor 13 and the conductive layer 15 are formed by a conventionally known semi-additive method, subtractive method, full-additive method, or the like, and it is desirable that the via conductor 13 and the conductive layer 15 be formed by the semi-additive method.

  The wiring board 3 can be produced as described above. By repeating this process, a multilayer wiring substrate 3 can also be produced.

  (8) As shown in FIG. 4 b, the electronic component 2 is flip-chip mounted on the wiring board 3 via the bumps 4.

  As described above, the mounting structure 1 can be manufactured.

  In addition, although 1st Embodiment mentioned above demonstrated to the structure which used the base material 13 which consists of woven fabrics as an example, the base material 13 should just be formed from the fiber, and the some extended | stretched in the longitudinal direction mutually parallel. The base material 13 made of the fibers may be used, or the base material 13 made of a nonwoven fabric may be used.

  Moreover, although 1st Embodiment mentioned above demonstrated to the structure which used the base | substrate 7 containing the base material 13 as an example, you may use the base | substrate 7 which does not contain the base material 13. FIG.

(Second Embodiment)
Next, the mounting structure provided with the wiring board according to the second embodiment of the present invention will be described in detail with reference to FIG. In addition, description is abbreviate | omitted regarding the structure similar to 1st Embodiment mentioned above.

  Unlike the first embodiment, the second embodiment further includes a resin structure 17A in which the core substrate 5A is interposed between the ceramic structure 8A and the through-hole conductor 9A. As a result, in addition to the ceramic structure 8A, the resin structure 17A can also be interposed between the base body 7A and the through-hole conductor 9A, and the insulation between the base body 7A and the through-hole conductor 9A can be improved. it can.

  Further, since the ceramic structure 8A is less likely to absorb moisture than the resin structure 17A, by disposing the ceramic structure 8A on the base 7 side, the conductive material that has penetrated into the resin structure 17A due to moisture is continuously formed. Intrusion into the base 7 can be reduced.

  The resin structure 17A is formed along the inner wall of the ceramic structure 8A. As resin structure 17A, what was formed with resin materials, such as an epoxy resin, cyanate resin, a polyimide resin, or a polyamide resin, can be used, for example. The thickness of the resin structure 17A is set to, for example, 2 μm or more and 10 μm or less. The thermal expansion coefficient of the resin structure 9 is set to, for example, 30 ppm / ° C. or more and 70 ppm / ° C. or less.

  Further, when a convex portion is formed on the surface of the ceramic structure 8A on the through-hole conductor 9 side, the convex portion is embedded in the resin structure 17A, so that the adhesive strength between the ceramic structure 9A and the resin structure 17A is increased. The separation between the ceramic structure 9A and the resin structure 17A can be reduced.

  The resin structure 17A preferably includes a filler formed of a ceramic material. As a result, the ceramic particles constituting the ceramic structure 8A and the filler can be combined, and the adhesive strength between the ceramic structure 9A and the resin structure 17A can be improved.

  As a ceramic material constituting the filler, it is desirable to use silicon oxide, aluminum oxide, calcium oxide or the like. Especially, it is desirable that the ceramic material is the same as the ceramic material constituting the ceramic structure 8A. In addition, the particle diameter of the filler is set to 0.5 μm or more and 15 μm or less, for example.

  The resin structure 17A can be formed as follows, for example. First, in the step (3) according to the first embodiment described above, after the ceramic structure 8A is formed, an A-stage liquid resin is applied to the inner wall of the ceramic structure 8A. Next, the resin structure 17A can be formed by heating and curing the liquid resin.

  The through-hole conductor 9 can be formed by depositing a conductive material on the inner wall of the resin structure 17A.

  In the second embodiment described above, the ceramic structure 8A is formed on the inner wall of the through hole TA, the resin structure 17A is formed on the inner wall of the ceramic structure 8A, and the through-hole conductor 9 is formed on the inner wall of the resin structure 17A. Although the configuration has been described as an example, the resin structure 17A may be formed on the inner wall of the through hole T, the ceramic structure 8A may be formed on the inner wall of the resin structure 17A, and the through-hole conductor 9 may be formed on the inner wall of the ceramic structure 8A. I do not care. Further, a plurality of ceramic structures 8A and resin structures 17A may be alternately formed.

(Third embodiment)
Next, a mounting structure including a wiring board according to the third embodiment of the present invention will be described in detail with reference to FIG. In addition, description is abbreviate | omitted regarding the structure similar to 1st Embodiment mentioned above.

  The third embodiment differs from the first embodiment in that the base body 7B is formed from a conductive material. Here, because the ceramic structure 8B and the resin structure 17B can reduce the possibility that the conductive material constituting the through-hole conductor 9B comes into contact with the base body 7B, the through-hole conductors 9B can be short-circuited via the base body 7B. Can be reduced.

  As the conductive material constituting the base body 7B, for example, a metal material such as nickel, cobalt, chromium, iron, or an alloy thereof can be used. By using such a metal material, the heat dissipation of the base body 7B can be improved. Moreover, the thermal expansion coefficient of the wiring board 2 can be reduced by using an alloy having a low thermal expansion coefficient such as a nickel alloy or a cobalt alloy.

  The surface of the base body 7B is preferably made of an oxide. As a result, when an oxide is used as the material constituting the ceramic structure 8B, the adhesion between the ceramic structure 8B and the base body 7B can be improved.

  The ceramic structure 8B is desirably interposed between the base body 7B and the conductive layer 15B on the upper and lower surfaces of the core substrate 5B. As a result, the insulation between the base body 7B and the conductive layer 15B can be ensured.

  The resin structure 9B is preferably interposed between the ceramic structure 8B and the conductive layer 15B on the upper surface and the lower surface of the core substrate 5B. That is, the ceramic structure 8B is formed on the base 7B, the resin structure 9B is formed on the ceramic structure 8B, and the conductive layer 15B is formed on the resin structure 9B on the upper and lower surfaces of the core substrate 5B. Is desirable. As a result, the insulation between the base body 7B and the conductive layer 15B can be improved.

  In the third embodiment described above, the ceramic structure 8B is formed on the base 7B, the resin structure 9B is formed on the ceramic structure 8B, and the conductive layer is formed on the resin structure 9B on the upper and lower surfaces of the core substrate 5B. 15B has been described by taking the structure formed as an example, but the resin structure 9B is formed on the base 7B, the ceramic structure 8B is formed on the resin structure 9B, and the conductive layer 15B is formed on the ceramic structure 8B. It doesn't matter. Further, the resin structure 9B may not be formed on the upper surface and the lower surface of the core substrate 5B.

  The present invention is not limited to the above-described embodiments, and various modifications, improvements, combinations, and the like can be made without departing from the spirit of the present invention.

  For example, in the first to third embodiments described above, the configuration in which the base is made of a resin material and a conductive material has been described as an example. However, other materials may be used as a material for forming the base, for example, a ceramic material. May be used.

DESCRIPTION OF SYMBOLS 1 Mounting structure 2 Electronic component 3 Wiring board 4 Bump 5 Core board 6 Wiring layer 7 Base body 8 Ceramic structure 9 Through-hole conductor
DESCRIPTION OF SYMBOLS 10 Insulator 11 Resin layer 12 Resin part 13 Base material 14 Insulating layer 15 Conductive layer 16 Via conductor 17 Resin structure T Through hole V Via hole

Claims (11)

A substrate having a through hole;
A through-hole conductor formed in the through-hole;
A ceramic structure interposed between the substrate and the through-hole conductor;
A wiring board comprising: The wiring board according to claim 1,
The wiring board according to claim 1, wherein the ceramic structure has a plurality of ceramic particles bonded to each other. The wiring board according to claim 1,
The wiring board according to claim 1, wherein the ceramic structure is formed along a penetration direction and a circumferential direction of the through hole. The wiring board according to claim 3,
The circuit board according to claim 1, wherein a thickness of the ceramic structure from the base side to the through-hole conductor side in the through-hole opening is larger than other portions. The wiring board according to claim 1,
The ceramic substrate has a plurality of convex portions on the surface on the through-hole conductor side. The wiring board according to claim 5,
The ceramic structure is formed by bonding a plurality of ceramic particles,
The ceramic particles include first ceramic particles that constitute a structural portion of the ceramic structure, and second ceramic particles that constitute the convex portion.
The wiring board according to claim 1, wherein a particle diameter of the second ceramic particles is larger than that of the first ceramic particles. The wiring board according to claim 1,
A wiring board further comprising a resin structure interposed between the ceramic structure and the through-hole conductor. The wiring board according to claim 1,
The wiring board according to claim 1, wherein the ceramic structure is bonded to the base. The wiring board according to claim 1;
An electronic component mounted on the wiring board and electrically connected to the through-hole conductor;
A mounting structure characterized by comprising: Preparing a substrate having a through hole;
Applying a ceramic sol containing ceramic particles and a solvent to the inner wall of the through hole;
Forming the ceramic structure having the ceramic particles by drying the solvent; and
Forming a through-hole conductor in the through-hole;
A method of manufacturing a wiring board, comprising: In the manufacturing method of the wiring board of Claim 10,
The substrate includes a resin;
The step of forming the ceramic structure includes
A method of manufacturing a wiring board, comprising the step of bonding the ceramic particles to each other by heating the ceramic particles below a thermal decomposition temperature of the resin.

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