JP2010272709A - Substrate processing apparatus, substrate detaching method and program - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily determine whether electrostatic attracting force remains without causing a fracture or a shift of a substrate. <P>SOLUTION: A substrate processing apparatus includes: an electrostatic chuck 212 provided on a surface of a placing table 200 and holding the substrate mounted on the surface of the placing table with electrostatic attracting force generated by applying a DC voltage; a lift pin 232 provided to freely protrude from the surface of the placing table and lifting the substrate from the surface of the placing table to detach it; a lifter 230 for moving the lift pin up and down; and a control unit 300 which sets lift thrust force for lifting the substrate with the lift pin to force equal to the weight of the substrate before lifting the lift pin, performs discharging process for removing electric charge of the substrate by ceasing the DC voltage for electrostatic attraction, and drives the lifter to elevate the lift pin with the set lift thrust force. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus, a substrate detaching method, and a program for processing a substrate by sucking and holding the substrate on the mounting table and detaching the substrate after the processing.

  In a substrate processing apparatus that performs predetermined processing such as etching and film formation on a substrate such as a semiconductor wafer or a glass substrate, for example, the substrate is carried into a processing chamber by a transfer arm, and placed on a mounting table to be sucked and held. When the processing such as etching is performed in the state of being held, and the processing is completed, for example, a lift pin provided so as to be movable up and down is pushed up, the substrate is detached from the mounting table, and carried out by a transfer arm or the like.

  At this time, as a jig for attracting and holding the substrate on the mounting table, for example, an electrostatic chuck that attracts and holds the substrate by electrostatic force such as Coulomb force by applying a DC voltage to an electrode plate embedded in a dielectric member. Is frequently used. However, when the substrate is attracted by such an electrostatic chuck, even if the voltage applied to the electrostatic chuck is turned off after processing, the charge remains on the substrate, and the adsorption holding force remains and an over-adsorption state occurs. May have. Therefore, if an attempt is made to detach the substrate from the mounting table using, for example, lift pins in such a state, the substrate may be broken or displaced.

  Even if the lift pins protrude from the upper surface of the electrostatic chuck, the substrate will bend if the substrate is not detached from the mounting table. When the substrate is bent, the thin film itself may be damaged depending on the characteristics (for example, physical strength) of the thin film formed on the substrate. For example, a low dielectric constant film (low-k film) formed on a substrate is weak in physical strength because there are voids in the film, and the film itself is likely to be damaged by bending of the substrate.

  For this reason, there are those that weaken the electrostatic adsorption force by applying a reverse voltage to the electrostatic chuck before removing the substrate or generating a plasma to remove static electricity from the substrate. (For example, refer to Patent Documents 1 and 2). In addition, there is an apparatus that measures the electrostatic attraction force applied to the substrate by detecting the load applied to the lift pin when the substrate is pushed up by the lift pin (see, for example, Patent Documents 3 and 4).

JP-A-9-64021 JP-A-11-274141 JP-A-5-129421 JP 2004-228488 A

  However, in the case of performing static elimination processing as in Patent Documents 1 and 2, since the electrostatic adsorption force applied to the substrate is not measured, the static elimination treatment may be insufficient and the electrostatic adsorption force may remain. . In this case, if the substrate is forcibly lifted by lift pins, the substrate may be broken or displaced.

  Further, in the case of detecting the load applied to the lift pins as in Patent Documents 3 and 4, a force larger than the weight of the substrate (only the substrate can be lifted against a force obtained by adding an electrostatic attraction force to the weight of the substrate). Force), the electrostatic adsorption force cannot be measured unless the substrate is actually pushed up with lift pins. For this reason, there is a possibility that the substrate may be broken or displaced when the electrostatic attraction force is measured.

  Therefore, the present invention has been made in view of such problems, and the object of the present invention is to easily determine whether or not a substrate is in an over-adsorption state without causing breakage or displacement of the substrate. It is to provide a substrate processing apparatus, a substrate detaching method, and a program that can be determined.

  In order to solve the above-described problems, according to an aspect of the present invention, there is provided a method for detaching the substrate from the substrate mounting table in a substrate processing apparatus that performs a predetermined process on the substrate sucked and held by the substrate mounting table. The substrate processing apparatus is provided on the surface of the substrate mounting table, and holds the substrate mounted on the surface of the substrate mounting table with an electrostatic adsorption force generated by applying a DC voltage. And lift pins for lifting and removing the substrate from the surface of the substrate mounting table and lifters for raising and lowering the lift pin, and raising the lift pins. Before, the lift thrust when lifting the substrate with the lift pins is set to a force equivalent to the weight of the substrate, and the electric charge of the substrate is removed by stopping the DC voltage for electrostatic adsorption Electrodeposition process is executed, the substrate desorption method characterized by having the steps of raising the lift pins in the lift thrust by driving the lifter is provided.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a substrate processing apparatus for performing a predetermined process on a substrate sucked and held on a substrate mounting table, and is provided on a surface of the substrate mounting table. An electrostatic chuck for holding the substrate placed on the surface of the substrate mounting table by an electrostatic attraction force generated by applying a DC voltage; Before lifting the lift pins, lift pins for lifting and removing the substrate from the surface of the mounting table, lifters for raising and lowering the lift pins, storage units for storing substrate processing conditions and substrate weights associated therewith, and , The substrate weight associated with the substrate processing condition executed on the substrate is acquired from the storage unit, and the lift force when the substrate is lifted by the lift pin is acquired from the storage unit. A control unit that sets the same force, stops the DC voltage for electrostatic attraction and removes the charge on the substrate, drives the lifter, and lifts the lift pin with the lift thrust; A substrate processing apparatus is provided.

  In order to solve the above-described problem, according to another aspect of the present invention, there is provided a method for detaching the substrate from the substrate mounting table in a substrate processing apparatus that performs a predetermined process on the substrate sucked and held by the substrate mounting table. A program for causing a computer to execute, wherein the substrate processing apparatus is provided on a surface of the substrate mounting table, and is mounted on the surface of the substrate mounting table by an electrostatic adsorption force generated by applying a DC voltage. An electrostatic chuck that holds the substrate; a lift pin that is provided so as to protrude and retract from the surface of the substrate mounting table; lifts the substrate from the surface of the substrate mounting table; and a lifter that lifts and lowers the lift pin; The substrate detachment method includes a step of setting a lift thrust when lifting the substrate with the lift pin to a force equivalent to the substrate weight before raising the lift pin. And a step of removing the electric charge of the substrate by stopping the DC voltage for electrostatic adsorption and driving the lifter to raise the lift pin with the lift thrust. A featured program is provided.

  According to such an apparatus, method, and program according to the present invention, the lift thrust when lifting the substrate with the lift pin is set to a force equivalent to the minimum substrate weight necessary for lifting the substrate, and the lift pin is raised. . According to this, even if the substrate is in an excessively adsorbed state, it is possible to prevent an excessive force from being applied to the substrate, so that the substrate can be prevented from being broken or displaced.

  Moreover, if the substrate is in an over-adsorption state, the lifter cannot be lifted by the lift pins and the lifter will not move. Therefore, it is only necessary to monitor the lifter status and detect whether the substrate has stopped moving. Whether or not can be easily determined.

  For example, a lifter sensor for detecting the state of the lifter is provided, the output of the lifter sensor is monitored, and whether or not the substrate is in an over-adsorption state depending on whether or not the lifter is moving even after the lift pin contacts the substrate. judge. According to this, it is possible to easily determine whether or not the substrate is in an over-adsorption state without applying an excessive force to the substrate.

  In this case, the lifter includes a base that supports the lift pins and an actuator that raises and lowers the base, and the lifter sensor can be configured by a position sensor that detects the raised position of the base. According to this, in the determination step, the output of the position sensor is monitored, and when the lift position changes within a certain time after the lift pin contacts the substrate, the substrate is over-adsorbed. If the rising position has not changed, it can be determined that the substrate is in an over-adsorption state.

  The lifter sensor is composed of, for example, a vibration sensor that detects driving vibration of the actuator. According to this, the determination step monitors the output of the vibration sensor, and if the actuator drive vibration is detected within a predetermined time after the lift pin contacts the substrate, the substrate is over-adsorbed. If the actuator drive vibration is not detected, it can be determined that the substrate is in an over-adsorption state.

  The lifter sensor may be a sound sensor that detects a driving sound of the actuator. According to this, the determination step monitors the output of the sound sensor, and if the actuator driving sound is detected within a predetermined time after the lift pin contacts the substrate, the substrate is over-adsorbed. If the actuator drive sound is not detected, it can be determined that the substrate is in an over-adsorption state.

  The lifter sensor may be a temperature sensor that detects the temperature of the actuator. In the determination step, the output of the temperature sensor is monitored, and the substrate is not over-adsorbed if the actuator temperature does not rise more than a predetermined value within a certain time after the lift pin contacts the substrate. If the temperature of the actuator is higher than a predetermined value, it can be determined that the substrate is in an over-adsorption state.

  If it is determined that the substrate is in an over-adsorption state, the lifter may be stopped and error processing (error display, error notification, etc.) may be performed. If it is determined that the substrate is in an over-adsorption state, the charge removal process can be started again without stopping the lifter. Even in this case, since the lift thrust is set to an extremely small force equivalent to the weight of the wafer, the substrate does not shift or jump up.

  The substrate processing apparatus includes a storage unit that stores a plurality of substrate processing conditions and a substrate weight associated with each of the substrate processing conditions, and the step of setting the lift thrust is performed from the mounting table. A substrate weight associated with a substrate processing condition executed on a substrate to be detached may be acquired from the storage unit, and the lift thrust may be set using the substrate weight. According to this, even when the substrate weight is different when the substrate is lifted when the substrate processing conditions are different (including when the processing conditions are different for the same type of substrate processing and different processing conditions for different types of substrate processing) An appropriate substrate weight that can be lifted without applying excessive force to the substrate can be set as the lift thrust according to the substrate processing conditions.

  Further, as the substrate weight used for setting the lift thrust, either the substrate weight after processing or the substrate weight before processing may be selectively used according to the substrate processing conditions. For example, when the substrate weight after processing becomes lighter than the substrate weight before processing as in the etching processing, either the substrate weight after processing or the substrate weight before processing can be used. On the other hand, when the substrate weight after processing becomes heavier than the substrate weight before processing as in the film forming process, it is preferable to use the substrate weight after the heavier processing (after film forming). According to this, even when the substrate weight differs before and after processing depending on the type of substrate processing, an appropriate substrate weight that can be lifted without applying excessive force to the substrate can be set as the lift thrust.

  The substrate weight used for setting the lift thrust is the substrate weight after processing when the substrate processing is normally completed, and the substrate weight before processing when the substrate processing is not normally completed. And the processed substrate weight may be selectively used according to the substrate processing conditions. For example, if the weight of the substrate after processing is lighter than the weight of the substrate before processing, such as etching, the substrate weight after processing is used when the substrate processing is completed normally. If not (when the amount of etching is less than expected), the heavier substrate weight before processing is preferably used. On the other hand, when the substrate weight after processing becomes heavier than the substrate weight before processing as in the film forming process, the weight is heavier both when the substrate processing ends normally and when it does not end normally. It is preferable to use the substrate weight after processing (after film formation). According to this, an appropriate substrate weight that can be lifted without applying an excessive force to the substrate can be set as the lift thrust depending on whether or not the substrate processing is normally completed.

  According to the present invention, it is possible to easily determine whether or not a substrate is in an over-adsorption state without causing breakage or displacement of the substrate by setting the lift thrust when lifting the substrate with lift pins to the substrate weight. it can.

It is sectional drawing which shows the structural example of the substrate processing apparatus concerning embodiment of this invention. It is drawing for demonstrating operation | movement of a lifter when a wafer is not an over-adsorption state. It is drawing for demonstrating operation | movement of a lifter when a wafer is an over-adsorption state. It is a figure which shows the specific example of the speed control of the motor which drives a lifter. It is a figure which shows the specific example at the time of comprising the lifter sensor shown in FIG. 1 with a position sensor. It is a figure which shows the specific example at the time of comprising the lifter sensor shown in FIG. 1 with an encoder. It is a figure which shows the specific example at the time of comprising the lifter sensor shown in FIG. 1 with a motor sensor. It is a figure which shows the data table of wafer weight information. It is a figure which shows the data table of other wafer weight information. 4 is a flowchart of a main routine of wafer detachment processing in the same embodiment. FIG. 10 is a flowchart of a subroutine for setting the lift thrust shown in FIG. 9 when the wafer weight information of FIG. 7 is used. FIG. 10 is a flowchart of a subroutine for setting the lift thrust shown in FIG. 9 when the wafer weight information of FIG. 8 is used. 10 is a flowchart of a main routine of another wafer detachment process in the same embodiment.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(Substrate processing equipment)
First, a configuration example of a substrate processing apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view illustrating a configuration example of a substrate processing apparatus according to the present embodiment. The substrate processing apparatus 100 will be described by taking as an example a plasma processing apparatus that performs plasma processing such as etching and film formation on a semiconductor wafer (hereinafter also simply referred to as “wafer”) W. FIG. 1 is a longitudinal sectional view showing a schematic configuration of a plasma processing apparatus according to the present embodiment.

  As shown in FIG. 1, the substrate processing apparatus 100 includes a processing chamber (chamber) 102 made of a conductive material such as aluminum. The processing chamber 102 is composed of a processing container including, for example, a cylindrical container main body 103 having an opening at the top, and a disk-shaped ceiling (lid) 105 that closes the opening of the container main body 103 so that the opening can be opened and closed. Is done. The ceiling part 105 is attached to the container main body 103 in an airtight manner so as to be detachable by a fastening member such as a bolt. The processing chamber 102 is grounded.

  Further, a seal member 114 such as an O-ring is interposed between the ceiling portion 105 and the container body 103. Thereby, higher airtightness is ensured between the ceiling part 105 and the container main body 103. Note that the shape of the processing chamber 102 is not limited to a cylindrical shape. For example, a rectangular tube shape (for example, a box shape) may be used.

  In the processing chamber 102, a cylindrical lower electrode (susceptor) 210 constituting the mounting table 200 on which the wafer W is mounted, and a lower gas 210 are disposed so as to introduce a processing gas, a purge gas, and the like. And an upper electrode 110 constituting a shower head.

  The lower electrode 210 is made of aluminum, for example, and is provided at the bottom of the processing chamber 102 via an insulating cylindrical holding part 220. The lower electrode 210 is formed in a cylindrical shape in accordance with the outer diameter of the wafer W. The shape of the lower electrode 210 is not limited to a cylindrical shape. For example, a prismatic shape (for example, a polygonal prism shape) may be used.

  A first high-frequency power source 150 is connected to the lower electrode 210 via a matching unit 152, and a second high-frequency power source 160 having a higher frequency than the first high-frequency power source 150 is connected to the upper electrode 110 via a matching unit 162. Yes. As shown in FIG. 1, it is preferable that a high-pass filter (HPF) 154 for filtering a high-frequency current flowing from the second high-frequency power source 160 into the lower electrode 210 is interposed between the matching unit 152 and the lower electrode 210. Further, it is preferable that a low pass filter (LPF) 164 for filtering a high frequency current flowing from the first high frequency power supply 150 to the upper electrode 110 is interposed between the matching unit 162 and the upper electrode 110.

  The upper electrode 110 is attached to the ceiling portion 105 of the processing chamber 102 via a shield ring 112 that covers the peripheral edge thereof. The upper electrode 110 has a diffusion chamber 116 inside, and a plurality of discharge holes 118 for discharging a processing gas are formed on the lower surface facing the mounting table 200.

  A processing gas supply unit 122 that supplies a gas necessary for processing in the processing chamber 102 is connected to the gas introduction port 121 in the upper electrode 110. The processing gas supply unit 122 introduces a gas from a gas supply source that supplies a processing gas, a purge gas, and the like necessary for, for example, wafer process processing in the processing chamber 102 and cleaning processing in the processing chamber 102. It is comprised from the gas line which has the valve | bulb and mass flow controller (MFC) which control.

  According to such a processing gas supply unit 122, the processing gas from the gas supply source is controlled to a predetermined flow rate by the mass flow controller and is supplied from the gas inlet 121 to the upper electrode 110. Then, the processing gas diffuses in the diffusion chamber 116 of the upper electrode 110 and is supplied into the processing chamber 102 from each discharge hole 118.

  In addition, the gas line of the process gas supply part 122 may be single, and plural may be sufficient as it. In this case, the plurality of gas lines may be configured to supply different types of processing gas, or may be configured to supply the same type of processing gas.

As the processing gas supplied into the processing chamber 102 by the processing gas supply unit 122, for example, a halogen-based gas containing F, Cl, or the like is used in etching. Specifically, when etching a silicon oxide film such as a SiO ₂ film, CHF ₃ gas or the like is used as a processing gas. Further, when etching a high dielectric thin film such as HfO ₂ , HfSiO ₂ , ZrO ₂ , ZrSiO ₄ , BCl ₃ gas is used as a processing gas, or a mixed gas of BCl ₃ gas and O ₂ gas is used as a processing gas. Used.

  On the surface of the mounting table 200, there is provided an electrostatic chuck 212 that holds the wafer mounted on the surface of the mounting table 200 by electrostatic attraction generated by applying a DC voltage. Specifically, the electrostatic chuck 212 is provided on the upper surface of the lower electrode 210. For example, the electrostatic chuck electrode 214 made of a conductive film such as copper foil is sandwiched between two polymer polyimide films or ceramics in an insulated state. It is constituted by.

  Connected to the electrostatic chuck electrode 214 is a DC power supply circuit 216 capable of switching a voltage output between a positive voltage, a negative voltage, and a ground (ground). The DC power supply circuit 216 is further configured to be able to adjust the voltage level of the positive voltage and the negative voltage. By applying a high voltage from the DC power supply circuit 216 to the electrostatic chuck electrode 214, the wafer W can be attracted and held on the upper surface of the electrostatic chuck 212 by Coulomb force.

  The lower electrode 210 includes a lifter 230 that lifts the wafer W with lift pins (lifter pins, support pins) 232 and removes the wafer W from the upper surface of the electrostatic chuck 212. The lifter 230 includes a base 234 that supports a plurality of (for example, three) lift pins 232 in an upright state, and an actuator 238 that attaches the base 234 to the rod 236 and moves it up and down. For example, the actuator 238 is constituted by a motor that moves up and down a rod 236 such as a ball screw. The configuration of the lifter 230 is not limited to this, and the lifter 230 may be configured by an elevating mechanism using an air cylinder or a linear motor, for example.

  The lift pin 232 extends vertically upward from below the lower electrode 210 and is provided so as to protrude and retract from the upper surface of the electrostatic chuck 212. Specifically, each lift pin 232 is inserted into a hole formed through the lower electrode 210 and the electrostatic chuck 212, and protrudes and retracts from the upper surface of the electrostatic chuck 212 in accordance with the lifting and lowering operation of the base 234. It is like that. The base 234 is formed in, for example, a disk shape or an annular shape, and lift pins 232 are attached to the upper portion thereof so as to be arranged at equal intervals. The number of lift pins 232 is not limited to three.

  According to the lifter 230 configured as described above, the lift pins 232 are lifted all at once by the base 234, whereby the wafer W can be lifted in parallel from the electrostatic chuck 212 and detached from the electrostatic chuck 212. Details of the operation of the lifter 230 will be described later.

  Although not shown, the mounting table 200 includes a temperature adjusting mechanism such as a heater and a refrigerant flow path, and a transfer gas (He gas or the like) between the upper surface of the electrostatic chuck 212 and the back surface of the wafer W. ) Can be provided with various functions as required. In addition, a focus ring (not shown) made of, for example, quartz or silicon that surrounds the wafer W in an annular shape may be disposed on the upper surface of the cylindrical holding unit 220.

  A gate valve 106 for opening and closing the substrate loading / unloading port 104 is provided on the side wall of the processing chamber 102. An exhaust port is provided below the side wall of the processing chamber 102, and an exhaust unit 109 including a vacuum pump (not shown) is connected to the exhaust port via an exhaust pipe 108. By exhausting the inside of the processing chamber 102 by the exhaust unit 109, the inside of the processing chamber 102 can be maintained in a predetermined vacuum atmosphere during the plasma processing.

  A control unit (overall control device) 300 is connected to the substrate processing apparatus 100, and each unit of the substrate processing apparatus 100 is controlled by the control unit 300. The control unit 300 includes an operation unit 310 including a keyboard for an operator to input commands for managing the substrate processing apparatus 100, a display for visualizing and displaying the operating status of the substrate processing apparatus 100, and the like. It is connected.

  Furthermore, the control unit 300 stores a program for realizing various processes executed by the substrate processing apparatus 100 under the control of the control unit 300, processing conditions (recipe) necessary for executing the program, and the like. A storage unit 320 is connected.

  In the storage unit 320, for example, a plurality of processing conditions X, Y... (Process processing recipe) for executing the process processing of the wafer W are stored. These processing conditions are a collection of a plurality of parameter values such as control parameters and setting parameters for controlling each part of the substrate processing apparatus 100. Each processing condition has parameter values such as a processing gas flow rate ratio, processing chamber pressure, and high-frequency power. In the present embodiment, the wafer weight is stored in association with each processing condition. This wafer weight is used when setting the lift thrust when the lift pins 232 lift the wafer. Details of setting the wafer weight and lift thrust will be described later.

  Note that these programs and processing conditions may be stored in a hard disk or a semiconductor memory, or are stored in a storage medium that can be read by a portable computer such as a CD-ROM or DVD, in the storage unit 320. You may set it to a position.

  The control unit 300 executes a desired process in the substrate processing apparatus 100 by reading out a desired program and processing conditions from the storage unit 320 based on an instruction from the operation unit 310 and controlling each unit. Further, the processing conditions can be edited by an operation from the operation unit 310.

  In the substrate processing apparatus 100 having such a configuration, for example, when performing an etching process as a wafer process, the wafer W is transferred into the processing chamber 102 by a transfer arm (not shown) and mounted on the lower electrode 210 that also serves as a mounting table. Then, the wafer W is electrostatically attracted by the electrostatic chuck 212. Then, a predetermined processing gas is introduced into the processing chamber 102 by the processing gas supply unit 122 and the processing chamber 102 is exhausted by the exhaust unit 109, whereby the processing chamber 102 is depressurized to a predetermined vacuum pressure.

  While maintaining a predetermined vacuum pressure in this way, the first high frequency power supply 150 applies a first high frequency power of 2 MHz, for example, to the lower electrode 210, and the second high frequency power supply 160 applies a second frequency of 60 MHz, for example, to the upper electrode 110. By applying the high frequency power, plasma of the processing gas is generated between the lower electrode 210 and the upper electrode 110 by the action of the second high frequency power, and a self-bias potential is applied to the lower electrode 210 by the action of the first high frequency power. appear.

  As a result, a process such as reactive ion etching can be performed on the wafer W on the lower electrode 210. When the process is completed, the voltage applied to the electrostatic chuck 212 is turned off, the lifter 230 is driven, and the wafer W is pushed up by the lift pins 232 to be detached from the electrostatic chuck 212.

(Lifter operation)
Here, the operation of the lifter 230 will be described with reference to the drawings. 2A and 2B are diagrams for explaining the operation of the lifter. FIG. 2A shows a case where the wafer W is not in an over-adsorption state, and FIG. 2B shows a case where the wafer W is in an over-adsorption state. Here, a case where the actuator 238 is configured by a motor that moves up and down a rod 236 made of a ball screw will be described as an example.

  According to such a lifter 230, when the wafer W is detached from the electrostatic chuck 212, the neutralization process for removing the charge on the wafer W is performed by turning off the voltage applied to the electrostatic chuck 212, and then the motor 238 is operated. Driven, the lift pins 232 are raised together with the base 234. Then, the tips of the lift pins 232 come into contact with the back surface of the wafer W.

  At this time, if no charge remains on the wafer W, no electrostatic attraction force remains, so the wafer W is not over-adsorbed. In this case, since only the wafer weight J acts downward on the wafer W as shown in FIG. 2A, the wafer W can be lifted by the lift pins 232 even with the lift thrust F equivalent to the wafer weight J.

  On the other hand, if the charge removal process is insufficient and charges remain on the wafer W, the electrostatic attraction force remains, so that the wafer W enters an over-adsorption state. In this case, as shown in FIG. 2B, the forces acting downward on the wafer W are the wafer weight J and the residual electrostatic attraction force fc. Therefore, in order to lift the wafer W in this case, it is necessary to push up the lift pins 232 with a lift thrust F that is equal to or greater than the sum of the wafer weight J and the residual electrostatic attraction force fc. However, if the wafer W is lifted with a lift thrust F larger than the wafer weight J, an excessive force is applied to the wafer W, so that the wafer W may be broken or displaced. In addition, in this case, the lift pins 232 may protrude from the upper surface of the electrostatic chuck 212 and the wafer W may be bent.

  Therefore, in the present embodiment, the lift pin 232 is raised by setting the lift force F to a minimum force necessary for lifting the wafer W, that is, a force equivalent to the wafer weight J. According to this, even if the wafer W is in an over-adsorption state, it is possible to prevent an excessive force from being applied to the wafer W, so that the wafer W can be prevented from being broken or displaced.

  Further, since the lift pins 232 are raised with a force equivalent to the wafer weight J, when the wafer W is in an over-adsorption state, the lift pins 232 do not move when the tip of the lift pins 232 contacts the back surface of the wafer W. That is, the tip of the lift pin 232 does not move without protruding from the upper surface of the electrostatic chuck 212, so that the wafer W does not bend.

  As described above, when the wafer W is in the over-adsorption state, the lifter 232 cannot be moved without being lifted by the lift pins 232, so the state of the lifter 230 is monitored to detect whether or not the lifter 230 has stopped moving. Thus, it can be determined whether or not the wafer W is in an over-adsorption state. According to this, it is possible to easily determine whether or not the wafer W is in an over-adsorption state without applying an excessive force to the wafer W.

  Specifically, for example, the wafer weight of the wafer W to be processed in the processing chamber is measured in advance and stored in the storage unit 320, and the lift thrust is set by reading the wafer weight from the storage unit 320 before raising the lift pins 232. Then, the lift pin 232 is raised by controlling the torque of the motor 238 based on the set lift thrust.

  As the motor 238 used for such a lifter 230, it is preferable to use a motor that can adjust the torque independently of the adjustment of the rotation speed. Even if the lift thrust is set to a predetermined value and adjusted to an appropriate torque, if the lift speed of the lift pins 232 is too high, the impact when the lift pins 232 come into contact with the wafer W becomes strong, so There is a risk of deviation. When such a position shift occurs, there arises a problem that the subsequent transfer of the wafer W is not normally performed or the wafer W is dropped from the lift pins 232. On the other hand, if the lifting speed of the lift pins 232 is too low, the time required for detaching the wafer W becomes long and the throughput decreases.

Accordingly, the torque of the motor 238, upon setting as lifting thrust is wafer weight equal force, the rotational speed of the time (t _c where lift pins 232 as shown in FIG. 3 in contact with the wafer W of the motor 238 ) Before and after the section T (= t _{1 to} t ₂ ). At this time, the time until the section T in contact with the wafer W (t _{start to} t ₁ ) and the time after the section T (t _{2 to} t _end ) are respectively S-shaped control in order to increase the rising speed. The rotational speed of the motor 238 is adjusted. Thereby, the lift thrust in the section T when the wafer W is lifted becomes a force equivalent to the set wafer weight, and the throughput is improved while suppressing the impact when the lift pins 232 contact the wafer W in the section T. be able to.

(Detection of excessive adsorption)
Next, detection of the over-adsorption state of the wafer W in this embodiment will be described in detail. As described above, when the lift thrust F is set to a force equivalent to the wafer weight J, the lifter 230 lifts the lift pins 232 after they are in contact with the wafer W when the wafer W is not in an over-adsorption state (FIG. 2A). Can do. For this reason, even after the lift pins 232 come into contact with the wafer W, the lifter 230 moves until it lifts up and finishes raising. On the other hand, when the wafer W is in an over-adsorption state (FIG. 2B), the lift pins 232 cannot lift it after contacting the wafer W. Therefore, the lifter 230 does not move as it is after the lift pins 232 come into contact with the wafer W.

  Therefore, in this embodiment, a lifter sensor 240 for detecting the state of the lifter 230 (base position, motor drive vibration, motor drive sound, motor temperature, etc.) is provided, and the lift pins 232 contact the wafer W based on the output of the lifter sensor 240. After that, it is determined whether or not the lifter 230 is moving, thereby determining whether or not the wafer W is in an over-adsorption state. That is, if the lifter 230 is moving, it is determined that the wafer W is not in an over-adsorption state, and if the lifter 230 is not moving, it is determined that the wafer W is in an over-adsorption state.

  Here, a specific example of the lifter sensor 240 will be described with reference to the drawings. First, FIG. 4 shows a case where the lifter sensor 240 is composed of a position sensor 242. Here, the raised position of the base 234 is directly detected by the position sensor 242. As such a position sensor 242, for example, an optical sensor or a magnetic sensor can be used. The position sensor 242 is disposed so as to be turned on when the base 234 is raised when the wafer W is lifted.

  The control unit 300 monitors the output of the position sensor 242, and if the position sensor 242 is turned on within a certain time after the lift pins 232 contact the wafer W, the lifter 230 is moved, so that the wafer W is in an over-adsorption state. If the position sensor 242 remains off, it is determined that the wafer W is in an over-adsorption state because the lifter 230 is not moving. Although FIG. 4 illustrates the case where the rising position of the base 234 is detected, the present invention is not limited to this. For example, the position of the lift pin 232 and the position of the rod 236 may be detected.

  Further, the position sensor 242 is not limited to the case of directly detecting the raised position of the base 234 as shown in FIG. For example, as shown in FIG. 5, an encoder 244 may be provided as a position sensor in the motor 238, and the raised position of the base 234 (lift pin 232, rod 236) may be indirectly detected by the encoder 244. Since the output of the encoder 244 is proportional to the raised position of the base 234, for example, the output of the encoder 244 corresponding to the raised position of the base 234 when the wafer W is lifted is detected in advance as a threshold and stored in the storage unit 320. deep.

  The control unit 300 monitors the output of the encoder 244, and if the output of the encoder 244 is equal to or higher than the threshold value within a certain time after the lift pin 232 contacts the wafer W, the lifter 230 is moved, so that the wafer W is over-adsorbed. If the output of the encoder 244 does not reach the threshold value, it is determined that the wafer W is in an over-adsorption state because the lifter 230 is not moving.

  The state of the lifter 230 described above is not limited to the raised position of the base 234 shown in FIGS. For example, as shown in FIG. 6, whether or not the lifter 230 is moving can also be detected by detecting the state (drive vibration, drive sound, temperature, etc.) of the motor 238 with the motor sensor 246. That is, when the lifter 230 is not moving, the motor 238 is not moving, so that no driving vibration or driving sound is generated in the motor 238, and a temperature rise above a predetermined level occurs. On the other hand, when the lifter 230 is moving, the motor 238 is also moving, so that driving vibration and driving sound are generated in the motor 238, and a temperature rise above a predetermined level does not occur.

  Therefore, for example, a vibration sensor, a sound sensor, or a temperature sensor is used as the motor sensor 246 to detect whether or not the motor 238 is moving. For example, when the motor sensor 246 is constituted by a vibration sensor, the control unit 300 monitors the output of the vibration sensor, and if the drive vibration of the motor 238 is detected within a certain time after the lift pin 232 contacts the wafer W, the motor 238 Therefore, it is determined that the wafer W is not in the over-adsorption state, and if the driving vibration of the motor 238 is not detected, the motor 238 is not moved, and therefore the wafer W is determined to be in the over-adsorption state.

  When the motor sensor 246 is a sound sensor, the control unit 300 monitors the output of the sound sensor, and if the drive sound of the motor 238 is detected within a certain time after the lift pin 232 contacts the wafer W, the motor Since the wafer 238 is moving, it is determined that the wafer W is not in an over-adsorption state, and if the driving sound of the motor 238 is not detected, the motor 238 is not moving and therefore the wafer W is determined to be in an over-adsorption state.

  When the motor sensor 246 is a temperature sensor, the control unit 300 monitors the output of the temperature sensor, and within a certain time after the lift pin 232 contacts the wafer W, the temperature of the motor 238 increases to a predetermined level or more. If the motor W 238 does not move, it is determined that the wafer W is not in an over-adsorption state. If the temperature of the motor 238 rises above a predetermined level, the motor 238 does not move and the wafer W is in an over-adsorption state. judge.

Note that, as described above, the time for determining the over-adsorption state of the wafer W (a certain time counted after the lift pins 232 contact the wafer W) has finished lifting the wafer W from the time when the lift pins 232 contact the wafer W. It is preferable to set between the time points. For example, when the motor 238 is controlled as shown in FIG. 3, the adsorption is performed from the time when the lift pin 232 contacts the wafer W (t _c ) to the time when the wafer W is completely separated from the electrostatic chuck 212 (t ₂ ). It can be a state determination time.

  Thus, in this embodiment, it is possible to easily determine whether or not the wafer W is in an over-adsorption state without applying an excessive force to the wafer W by setting the lift thrust to a force equivalent to the wafer weight.

(Wafer weight)
Here, the wafer weight used when setting the lift thrust will be described in more detail. Since the wafer W is lifted after the wafer processing is completed, it is preferable to basically use the wafer weight after the processing for setting the lift thrust. In this case, the processed wafer weight is measured in advance and stored in the storage unit 320.

Also, if the wafer processing conditions (for example, processing chamber pressure, processing gas type, flow rate, etc.) are different, the wafer weight after processing will also be different. The weight of the wafer after processing may be used. In this case, for example, as shown in FIG. 7, the substrate weight information relating the processed wafer weight (J _X , J _Y ,...) Measured for each processing condition (X, Y,...). Is stored in the storage unit 320. Before lifting the lift pins 232, the wafer weight corresponding to the processing condition of the wafer W is read from the storage unit 320 and the lift thrust is set.

  Furthermore, if the type of wafer processing (for example, etching, film formation, etc.) is different, the wafer weight before and after the wafer processing also changes. In this case, considering the case where the wafer processing stops midway, the lift thrust is set. It is preferable to selectively use either the wafer weight after processing or the wafer weight before processing depending on the type of wafer processing. Also in this case, since the processing conditions are different for each type of wafer processing, the wafer weight used for setting the lift thrust may be associated with each processing condition and stored in the storage unit 320 as described above.

  For example, since a thin film is formed on the surface of the wafer W in the film forming process, the wafer weight becomes heavier after the process than before the process. Therefore, in this case, by setting the lift thrust with the weight of the wafer after processing that becomes the heaviest, if the wafer W is not in an over-adsorption state, not only when the wafer processing is completed normally, but also when the wafer processing is completed. The wafer W can be lifted even if it stops in the middle.

  Further, since the surface of the wafer W is scraped off during the etching process, the wafer weight is lighter after the process than before the process. Therefore, if the lift thrust is set using the weight of the wafer after processing, the wafer W is lifted if the wafer processing stops halfway even if there is no problem when the wafer processing is normally completed. There is a possibility that it will not be possible.

  Therefore, in this case, the lift thrust is set based on the weight of the wafer before processing, which is the heaviest. As a result, if the wafer W is not in an over-adsorption state, the wafer W can be lifted not only when the wafer processing is completed normally but also when the wafer processing is stopped halfway.

  When the wafer weight before and after the wafer processing changes depending on the wafer processing as described above, the wafer weight used for setting the lift thrust may be changed depending on whether the wafer processing is normally completed or not. Good. For example, in the case of the etching process, the weight of the wafer W becomes heavier when the wafer process ends abnormally than when the wafer process ends normally. Therefore, when the wafer process ends normally, the wafer weight after the process is used and the wafer process is abnormal. In the case of completion, the wafer weight before processing may be used.

  In this case, when the wafer processing is normally completed, the wafer weight after processing is used. When the wafer processing is not normally completed, either the wafer weight after processing or the wafer weight before processing is calculated. You may make it selectively use according to wafer processing conditions (for example, kind of wafer processing). For example, when the weight of the wafer after processing is lighter than the weight of the wafer before processing as in the etching processing described above, the wafer weight after processing is used when the wafer processing is normally completed. When the process is not completed (when the amount etched by etching is less than planned), it is preferable to use the weight of the wafer before processing, which is heavier. On the other hand, when the weight of the wafer after processing becomes heavier than the weight of the wafer before processing as in the film forming process, the weight of the heavier both when the wafer processing ends normally and when it does not end normally. It is preferable to use the wafer weight after processing (after film formation). Accordingly, the present invention can be applied to any kind of wafer processing, and the wafer W can be lifted when it is not in an over-adsorption state.

In this case, for example, as shown in FIG. 8, the wafer weight before processing (J _{X (bef)} , J _{Y (bef)} ,...) Measured for each processing condition (X, Y,...). And the weight of the wafer after processing (J _{X (aft)} , J _{Y (aft)} ,...) _Are stored in the storage unit 320. Before lifting the lift pins 232, the wafer weight before processing or the wafer weight after processing corresponding to the processing condition of the wafer W is read from the storage unit 320 and the lift thrust is set.

(Specific example of wafer desorption processing)
Next, a specific example of the wafer detachment process executed by the control unit 300 when detaching the wafer W from the electrostatic chuck 212 will be described with reference to the drawings. FIG. 9 is a flowchart of a main routine showing an outline of the wafer detachment process in the present embodiment. FIG. 10 is a flowchart of a subroutine for setting lift thrust based on the wafer weight information shown in FIG. FIG. 11 is a flowchart of a subroutine when the lift thrust is set based on the wafer weight information shown in FIG. The wafer detachment process is executed based on a program stored in the storage unit 320.

  In the wafer detachment process, as shown in FIG. 9, the lift thrust for lifting the wafer W is first set in step S110. Here, when the lift thrust is set based on the wafer weight information shown in FIG. 7, the lift thrust is set based on the flowchart of the subroutine shown in FIG.

  In the setting of the lift thrust shown in FIG. 10, first, in step S210, the wafer weight associated with the processing condition executed on the wafer W is acquired based on the wafer weight information shown in FIG. Subsequently, in step S220, a force equivalent to the wafer weight is set as the lift thrust, and the process returns to the main routine shown in FIG.

  Further, when the lift thrust is set based on the wafer weight information shown in FIG. 8, the lift thrust is set based on the flowchart of the subroutine shown in FIG. In the setting of the lift thrust shown in FIG. 11, first, in step S310, it is determined whether or not the wafer processing is normally completed. For example, if there is an abnormality or power interruption during the wafer processing and the processing stops in the middle, it is determined that the processing has not ended normally.

  If it is determined in step S310 that the wafer processing has been completed normally, the processed wafer weight associated with the processing conditions executed on the wafer W in step S320 is acquired based on the wafer weight information shown in FIG. To do. On the other hand, if it is determined in step S310 that the wafer processing has not ended normally, the wafer weight before processing associated with the processing conditions executed on the wafer W in step S330 is shown in FIG. Obtain based on weight information. Subsequently, in step S340, a force equivalent to the wafer weight is set as the lift thrust, and the process returns to the main routine shown in FIG.

Next, the voltage applied to the electrostatic chuck 212 is turned off in step S120 shown in FIG. The neutralization process is executed as follows, for example. First, the processing chamber 102 is evacuated to a predetermined pressure by evacuating the processing chamber 102 while introducing a processing gas such as N ₂ gas from the processing gas supply section 122 into the processing chamber 102 at a predetermined gas flow rate. Then, a voltage (reverse applied voltage) having a polarity opposite to that at the time of electrostatic adsorption is applied to the electrostatic chuck 212 from the DC power supply circuit 216, for example. When a predetermined time elapses in this state, the reverse applied voltage to the electrostatic chuck 212 is turned off, the introduction of the processing gas is turned off, and the pressure control in the processing chamber 102 is stopped. Note that the voltage applied from the DC power supply circuit 216 to the electrostatic chuck 212 during the static elimination process is not limited to the reverse polarity, and the polarity inversion may be repeated a plurality of times.

When such a charge removal process is completed, the motor 238 is driven by the speed control shown in FIG. 3 in step S130, and the lift pin 232 starts to rise. In step S140, it is determined whether or not the lift pins 232 are in contact with the wafer W. Specifically, for example, the determination is made based on whether or not the counting of the time from the _start of driving the motor 238 (t _start ) shown in FIG. 3 to the time (t _c ) when the lift pins 232 contact the wafer W is completed.

  Subsequently, in step S150, the output of the lifter sensor 240 is monitored for a predetermined time to determine whether the wafer W is in an over-adsorption state. Specifically, as described above, it is determined from the output of the lifter sensor 240 whether or not the lifter 230 is moving. When the lifter 230 is moving, it is determined that the wafer W is not in an excessive adsorption state, and when the lifter 230 is not moving, it is determined that the wafer W is in an excessive adsorption state.

  If it is determined in step S160 that the wafer W is in an over-adsorption state, error processing is executed in step S170. As error processing, the motor 238 is stopped and the lifter 230 is stopped, and an error is displayed on the display or an error is notified.

  If it is determined in step S160 that the wafer W is not in an over-adsorption state, it is determined in step S180 whether or not the lifting of the lift pins 232 has ended, for example, whether or not the speed control of the motor 238 has ended. If it is determined in step S180 that the lift pins 232 have been lifted, a series of wafer detachment processes are terminated.

  Thus, according to the present embodiment, by setting the lift thrust when lifting the wafer W to a force equivalent to the weight of the wafer, it is possible to easily determine whether or not the wafer W is in an over-adsorption state without applying an excessive force. I can judge. Thereby, the wafer W can be carried out or removed by the transfer arm or the like without the wafer W being broken or displaced.

  In the wafer detachment process shown in FIG. 9, when it is determined in step S160 that the wafer W is in an over-adsorption state, an error process is performed in step S170. However, the present invention is not limited to this. Is not to be done. For example, when it is determined in step S160 that the wafer W is in an over-adsorption state, the charge removal process for removing the charge on the wafer W may be executed again. In this case, the neutralization process may be started again without stopping the lifter 230. In this embodiment, the lift thrust when lifting the wafer W is set to a very small force equivalent to the weight of the wafer. Therefore, even if the static elimination process is started without stopping the lifter 230, the wafer W is displaced or jumped up. This is because there is nothing to do. Note that the static elimination process again may be executed a plurality of times.

  Here, a specific example of a flowchart of the wafer detachment process for executing the static elimination process again will be described with reference to FIG. In FIG. 12, the same steps as in FIG. 9 perform the same processing, and thus detailed description thereof is omitted. In the wafer detachment process shown in FIG. 12, if it is determined in step S160 that the wafer W is in an over-adsorption state, it is determined in step S172 whether or not the static elimination process has been performed again a predetermined number of times.

  If it is determined in step S172 that the recharging process has not been performed a predetermined number of times, the recharging process is performed again in step S174. As the charge removal process again, the same process as the charge removal process in step S120 may be performed, or a different process may be performed.

  When the charge removal process ends, the process returns to the process of step S150 to determine the over-adsorption state. If the static elimination of the wafer W is sufficient, the residual electrostatic attraction force disappears, so that the lift pins 232 start to move again to lift the wafer W. Accordingly, in this case, it is determined in step S160 that the wafer W is not in an over-adsorption state.

  On the other hand, if the static elimination of the wafer W is insufficient, the residual electrostatic attraction force is not lost, so the lift pins 232 remain in contact with the wafer W. In this case, it is determined in step S160 that the wafer W is in an over-adsorption state, and in step S172, the charge removal process is repeated until the predetermined number of times is reached. If the wafer W is still in the over-adsorption state after the predetermined number of times of static elimination processing has been repeated in step S172, error processing is executed in step S170.

  Further, a medium such as a storage medium storing software programs for realizing the functions of the above-described embodiments (for example, a wafer processing function, a wafer detachment processing function, and a charge removal processing function) is supplied to the system or apparatus. It goes without saying that the present invention can also be achieved by reading and executing a program stored in a medium such as a storage medium by a computer (or CPU or MPU).

  In this case, the program itself read from the medium such as a storage medium realizes the functions of the above-described embodiment, and the medium such as the storage medium storing the program constitutes the present invention. Examples of the medium such as a storage medium for supplying the program include a floppy (registered trademark) disk, a hard disk, an optical disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, and a DVD-RAM. , DVD-RW, DVD + RW, magnetic tape, non-volatile memory card, ROM, or network download.

  Note that by executing the program read by the computer, not only the functions of the above-described embodiments are realized, but also an OS or the like running on the computer is part of the actual processing based on the instructions of the program. Alternatively, the case where the functions of the above-described embodiment are realized by performing all the processing and the processing is included in the present invention.

  Furthermore, after a program read from a medium such as a storage medium is written to a memory provided in a function expansion board inserted into the computer or a function expansion unit connected to the computer, the function is determined based on the instructions of the program. The present invention also includes a case where the CPU or the like provided in the expansion board or the function expansion unit performs part or all of the actual processing and the functions of the above-described embodiments are realized by the processing.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

  The present invention can be applied to a substrate processing apparatus, a substrate detaching method, and a program for processing a substrate by sucking and holding the substrate on the mounting table and detaching from the mounting table after the processing.

DESCRIPTION OF SYMBOLS 100 Substrate processing apparatus 102 Processing chamber 103 Container body 104 Substrate loading / unloading port 105 Ceiling part 106 Gate valve 108 Exhaust pipe 109 Exhaust part 110 Upper electrode 112 Shield ring 114 Seal member 116 Diffusion chamber 118 Discharge hole 121 Gas inlet 122 Process gas supply part 150 First high frequency power supply 154 High pass filter (HPF)
160 Second high frequency power supply 164 Low pass filter (LPF)
152 Matching device 162 Matching device 200 Mounting table (substrate mounting table)
210 Lower electrode 212 Electrostatic chuck 214 Electrostatic chuck electrode 216 DC power supply circuit 220 Cylindrical holding part 230 Lifter 232 Lift pin 234 Base 236 Rod 238 Actuator (motor)
240 Lifter sensor 242 Position sensor 244 Encoder 246 Motor sensor 300 Control unit 310 Operation unit 320 Storage unit W Wafer

Claims (18)

A method of detaching the substrate from the substrate mounting table in a substrate processing apparatus for performing predetermined processing on the substrate held by suction on the substrate mounting table,
The substrate processing apparatus includes:
An electrostatic chuck that is provided on the surface of the substrate mounting table and holds the substrate mounted on the surface of the substrate mounting table with an electrostatic attraction generated by applying a DC voltage;
A lift pin provided so as to protrude and retract from the surface of the substrate mounting table, and lifts and removes the substrate from the surface of the substrate mounting table;
A lifter for raising and lowering the lift pin,
Before lifting the lift pin, setting the lift thrust when lifting the substrate with the lift pin to a force equivalent to the substrate weight;
Stopping the DC voltage for electrostatic attraction and removing the charge on the substrate, driving the lifter to raise the lift pin with the lift thrust; and
A method for desorbing a substrate, comprising: A lifter sensor for detecting the state of the lifter is provided,
The step of monitoring the output of the lifter sensor and determining whether or not the substrate is in an over-adsorption state based on whether or not the lifter is moving even after the lift pin contacts the substrate. 2. The substrate desorption method according to 1. The lifter includes a base that supports the lift pin, and an actuator that moves the base up and down.
The lifter sensor is a position sensor that detects the raised position of the base,
The determination step monitors the output of the position sensor, and determines that the substrate is not in an over-adsorption state when the lift position has changed within a certain time after the lift pin contacts the substrate. 3. The substrate desorption method according to claim 2, wherein when the rising position is not changed, it is determined that the substrate is in an over-adsorption state. The lifter includes a base that supports the lift pin, and an actuator that moves the base up and down.
The lifter sensor is a vibration sensor that detects drive vibration of the actuator,
The determination step monitors the output of the vibration sensor, and determines that the substrate is not in an over-adsorption state when the actuator drive vibration is detected within a predetermined time after the lift pin contacts the substrate. 3. The substrate desorption method according to claim 2, wherein when the actuator driving vibration is not detected, it is determined that the substrate is in an over-adsorption state. The lifter includes a base that supports the lift pin, and an actuator that moves the base up and down.
The lifter sensor is a sound sensor that detects a driving sound of the actuator,
The determination step monitors the output of the sound sensor, and determines that the substrate is not in an over-adsorption state when the actuator driving sound is detected within a predetermined time after the lift pin contacts the substrate. 3. The substrate detachment method according to claim 2, wherein if the actuator driving sound is not detected, it is determined that the substrate is in an over-adsorption state. The lifter includes a base that supports the lift pin, and an actuator that moves the base up and down.
The lifter sensor is a temperature sensor that detects the temperature of the actuator,
In the determination step, the output of the temperature sensor is monitored, and the substrate is not over-adsorbed if the actuator temperature does not rise more than a predetermined value within a certain time after the lift pin contacts the substrate. 3. The substrate desorption method according to claim 2, wherein when the actuator temperature is higher than a predetermined temperature, it is determined that the substrate is in an over-adsorption state. The substrate removal method according to claim 2, further comprising a step of performing error processing by stopping the lifter when it is determined in the determination step that the substrate is in an over-adsorption state. Separation method. 7. The method according to claim 2, further comprising a step of starting a static elimination process again without stopping the lifter when it is determined in the determination step that the substrate is in an over-adsorption state. The substrate desorption method described. The substrate processing apparatus includes a storage unit that stores a plurality of substrate processing conditions and a substrate weight associated with each of the substrate processing conditions.
In the step of setting the lift thrust, the substrate weight associated with the substrate processing conditions executed on the substrate to be detached from the mounting table is acquired from the storage unit, and the lift thrust is calculated using the substrate weight. The substrate desorption method according to claim 1, wherein the substrate desorption method is set. 10. The substrate weight used for setting the lift thrust selectively uses either a substrate weight after processing or a substrate weight before processing according to substrate processing conditions. The substrate desorption method described. The substrate weight used for setting the lift thrust is the substrate weight after processing when the substrate processing is normally completed, and the substrate weight and processing before processing when the substrate processing is not normally completed. The substrate desorption method according to claim 10, wherein any of the subsequent substrate weights is selectively used according to substrate processing conditions. A substrate processing apparatus for performing predetermined processing on a substrate held by suction on a substrate mounting table,
An electrostatic chuck that is provided on the surface of the substrate mounting table and holds the substrate mounted on the surface of the substrate mounting table with an electrostatic attraction generated by applying a DC voltage;
A lift pin provided so as to protrude and retract from the surface of the substrate mounting table, and lifts and removes the substrate from the surface of the substrate mounting table;
A lifter for raising and lowering the lift pin;
A storage unit for storing substrate processing conditions and a substrate weight associated therewith;
Before lifting the lift pin, the substrate weight associated with the substrate processing condition executed on the substrate is acquired from the storage unit, and the lift thrust when lifting the substrate with the lift pin is acquired from the storage unit A controller configured to set a force equivalent to the weight, stop the DC voltage for electrostatic attraction and remove the charge of the substrate, and drive the lifter to raise the lift pins with the lift thrust When,
A substrate processing apparatus comprising: A lifter sensor for detecting the state of the lifter is provided,
The control unit monitors the output of the lifter sensor and determines whether the substrate is in an over-adsorption state based on whether the lifter is moving after the lift pin contacts the substrate. The substrate processing apparatus according to claim 12. The lifter includes a base that supports the lift pin, and an actuator that moves the base up and down.
The substrate processing apparatus according to claim 13, wherein the lifter sensor is a position sensor that detects a raised position of the base. The lifter includes a base that supports the lift pin, and an actuator that moves the base up and down.
The substrate processing apparatus according to claim 13, wherein the lifter sensor is a vibration sensor that detects driving vibration of the actuator. The lifter includes a base that supports the lift pin, and an actuator that moves the base up and down.
The substrate processing apparatus according to claim 13, wherein the lifter sensor is a sound sensor that detects a driving sound of the actuator. The lifter includes a base that supports the lift pin, and an actuator that moves the base up and down.
The substrate processing apparatus according to claim 13, wherein the lifter sensor is a temperature sensor that detects a temperature of the actuator. A program for causing a computer to execute a method of detaching the substrate from the substrate mounting table in a substrate processing apparatus that performs a predetermined process on the substrate held by suction on the substrate mounting table.
The substrate processing apparatus includes:
An electrostatic chuck that is provided on the surface of the substrate mounting table and holds the substrate mounted on the surface of the substrate mounting table with an electrostatic attraction generated by applying a DC voltage;
A lift pin provided so as to protrude and retract from the surface of the substrate mounting table, and lifts and removes the substrate from the surface of the substrate mounting table;
A lifter for raising and lowering the lift pin,
The substrate detachment method includes:
Before lifting the lift pin, setting the lift thrust when lifting the substrate with the lift pin to a force equivalent to the substrate weight;
Executing a static elimination process to remove the electric charge of the substrate by stopping the DC voltage for electrostatic attraction, driving the lifter to raise the lift pin with the lift thrust;
The program characterized by having.

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