JP2011157223A - Apparatus for manufacturing trichlorosilane - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing trichlorosilane, which heats a supplied gas at a high thermal efficiency, which can be upsized without damaging the thermal efficiency, and which can carry out mass production. <P>SOLUTION: The apparatus for manufacturing trichlorosilane includes a reaction vessel 20 having a reaction chamber 11 in which a raw material gas containing tetrachlorosilane and hydrogen is supplied to produce a reaction gas containing trichlorosilane and hydrogen chloride, a heater 30 equipped in the reaction chamber 11 and heating the raw material gas, a heat insulating vessel 40 installed so as to surround the periphery of the reaction vessel 20, and a gas supply flow passage 15 installed between the heat insulating vessel 40 and the reaction vessel 20 so as to surround the reaction vessel 20 and supplying the raw material gas to the reaction chamber 11. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an apparatus for producing trichlorosilane that converts tetrachlorosilane to trichlorosilane.

Trichlorosilane (SiHCl ₃ ) used as a raw material for producing silicon (Si: silicon) can be produced by converting tetrachlorosilane (SiCl ₄ : silicon tetrachloride) by reacting with hydrogen.
That is, silicon is produced by the reduction reaction and thermal decomposition reaction of trichlorosilane according to the following reaction formulas (1) and (2). Trichlorosilane is produced by a conversion reaction according to the following reaction formula (3).
SiHCl ₃ + H ₂ → Si + 3HCl (1)
4SiHCl ₃ → Si + 3SiCl ₄ + 2H ₂ (2)
SiCl ₄ + H ₂ → SiHCl ₃ + HCl (3)

  As an apparatus for producing trichlorosilane, for example, Patent Document 1 discloses that a reaction chamber has a double chamber design having an outer chamber and an inner chamber formed by two concentric tubes, and the outside of the reaction chamber. A reaction vessel in which a heating element is arranged around is proposed. In this reaction vessel, a heating element, which is a heater portion formed of carbon or the like, generates heat when energized, and the reaction chamber is heated from the outside to react the gas in the reaction chamber.

  On the other hand, in Patent Document 2, the reaction vessel is constituted by a plurality of concentric cylindrical walls and disks that block the upper and lower sides of the small spaces between the cylindrical walls, and the small spaces are continuously communicated. We have proposed a trichlorosilane production apparatus that has a reaction chamber and a heating element inside the innermost cylindrical wall.

Japanese Patent No. 3781439 JP 2008-133170 A

  However, in the structure described in Patent Document 1, the reaction chamber is heated by a heating element arranged outside the reaction chamber. In this case, the heat radiation from the heating element is not only radially inward but also radially outward. Is disadvantageous in that the thermal efficiency is low.

  On the other hand, in the case of the structure described in Patent Document 2, by providing a heating element at the center position of the reaction vessel, the entire radiant heat radiated radially outward can be added to the gas in the reaction chamber. It can be heated with higher thermal efficiency than described. However, since the reaction chamber is provided so as to surround the outside of the heating element, when the apparatus is enlarged to increase the production volume and the outer diameter of the reaction chamber is increased, the outer periphery of the reaction chamber is far from the heating element. Therefore, there is a limit to dealing with an increase in size.

  The present invention has been made in view of the above-described problems, and can be used to produce a trichlorosilane that can heat a supply gas with higher thermal efficiency and can increase the size of the apparatus without impairing the thermal efficiency, thereby enabling mass production. An object is to provide an apparatus.

  The present invention is an apparatus for producing trichlorosilane from a raw material gas containing tetrachlorosilane and hydrogen, the reaction vessel having a reaction chamber that is supplied with the raw material gas and generates a reaction gas containing trichlorosilane and hydrogen chloride. And a heater provided in the reaction chamber for heating the source gas, a heat-insulating container provided so as to cover the periphery of the reaction container, and surrounding the reaction container between the heat-insulating container and the reaction container And a gas supply channel for supplying the source gas to the reaction chamber.

  According to this trichlorosilane manufacturing apparatus, by installing the heater in the reaction chamber, the heat of the heater is directly transmitted to the raw material gas flowing around it, so that the raw material gas can be heated with high thermal efficiency. In addition, since the heater is installed in the reaction chamber, even if the reaction vessel is enlarged, the heater can be installed at a necessary location without impairing thermal efficiency.

  Further, in this trichlorosilane production apparatus, the reaction vessel is heated by the heater and becomes high temperature, but since the source gas flows along the outer surface of the reaction vessel, the outer surface of the reaction vessel is cooled by the low temperature source gas, The raw material gas can be preheated by effectively utilizing the heat of the reaction vessel. Therefore, the temperature rise of the heat insulation container due to the heat released from the outer surface of the reaction container can be suppressed.

  In this trichlorosilane manufacturing apparatus, each of the heat insulating container and the reaction container includes a top plate and a cylindrical wall body, and the gas supply flow path includes the top plate of the heat insulating container and the top plate of the reaction container. And a cylindrical space formed between the wall body of the heat insulating container and the wall body of the reaction container. A plurality of first flow holes that connect the cylindrical space and the inside of the reaction vessel to the wall of the reaction vessel to circulate the source gas at a substantially equal interval in the circumferential direction. Is preferably provided.

  In this case, since the supplied source gas flows into the reaction vessel through the plurality of flow holes in a state where the gas supply channel is filled, the source gas can be dispersed and uniformly supplied in the reaction vessel.

  Further, in this trichlorosilane production apparatus, a partition wall that divides the disk-shaped space and the cylindrical space is provided, and the partition wall has a second flow hole that connects these spaces and distributes the source gas. It is preferable that a plurality of radial openings are provided at substantially equal intervals in the circumferential direction, and the total opening area of the first circulation holes is smaller than the total opening area of the second circulation holes.

  In this case, the raw material gas flows into the cylindrical space from the disc space through the second flow hole, and the raw material gas flows into the reaction vessel from the cylindrical space through the first flow hole. Since the total opening area of the first flow holes is smaller than that of the second flow holes and the raw material gas flows into the reaction vessel in a state where the cylindrical space is filled, the raw material gas can be dispersed and supplied uniformly in the reaction vessel.

  Further, in this trichlorosilane manufacturing apparatus, a plurality of third flow holes through which the source gas flows are provided at substantially equal intervals in the circumferential direction, and through the third flow holes, the disk-shaped space is provided. A source gas supply pipe for supplying the source gas is provided, and the total opening area of the second circulation holes is preferably smaller than the total opening area of the third circulation holes.

  In this case, the raw material gas is supplied to the disk-shaped space through the third flow hole, and the raw material gas flows into the cylindrical space from the disk-shaped space through the second flow hole. Since the source gas flows into the cylindrical space in a state where the total opening area of the second circulation hole is smaller than that of the third circulation hole and the disk-shaped space is filled, the source gas is uniformly dispersed in the cylindrical space. Can supply. That is, in this trichlorosilane production apparatus, the raw material gas is first supplied to be uniformly dispersed in the disk-shaped space and preheated, and then supplied to be uniformly dispersed in the cylindrical space and further preheated. Further, it is supplied so as to be uniformly dispersed in the reaction vessel. Therefore, the sufficiently preheated raw material gas can be uniformly dispersed and supplied to the reaction vessel.

  According to the trichlorosilane production apparatus according to the present invention, by installing the heater in the reaction chamber, the heat of the heater is directly transmitted to the raw material gas, the raw material gas is heated with high thermal efficiency, and the conversion rate to trichlorosilane is achieved. Can be further improved. Moreover, even if the reaction vessel is increased in size, a heater can be installed at a required location, the apparatus can be increased in size without impairing the thermal efficiency, and mass production is possible.

  Further, by providing the gas supply channel along the outer surface of the reaction vessel, it is possible to efficiently preheat the raw material gas while suppressing an increase in the temperature of the heat insulating vessel containing the reaction vessel. Therefore, even if the heat insulation container is made of carbon, it prevents the carbon, hydrogen, chlorosilane, and hydrogen chloride (HCl) in the raw material gas from reacting to produce methane, methylchlorosilane, etc. High trichlorosilane can be obtained.

It is a longitudinal cross-sectional view which shows one Embodiment of the trichlorosilane manufacturing apparatus which concerns on this invention. It is a cross-sectional arrow view along the AA line of FIG. It is a cross-sectional arrow view which follows the BB line of FIG. It is a longitudinal cross-sectional view which shows other embodiment of the trichlorosilane manufacturing apparatus which concerns on this invention.

Hereinafter, an embodiment of a trichlorosilane production apparatus according to the present invention will be described.
The trichlorosilane production apparatus 10 of the present embodiment is an apparatus for producing trichlorosilane by heating a raw material gas containing tetrachlorosilane and hydrogen to generate a reaction gas containing trichlorosilane and hydrogen chloride by a conversion reaction. As shown in FIG. 1, a reaction vessel 20 that is supplied with a source gas to generate a reaction gas, a heater 30 that heats the source gas in the reaction vessel 20, and the periphery of the reaction vessel 20 are covered. The heat insulating container 40 provided in this way has a structure accommodated in the casing 50.

  The casing 50 is made of a metal such as stainless steel, and includes a disk-shaped bottom plate 51, a cylindrical tube wall 52 erected on the bottom plate 51, and a top plate 53 that closes the upper end of the tube wall 52. It is comprised by.

  The heat insulating container 40 is made of a heat insulating material, and is disposed inside the casing 50. The disk-shaped bottom plate 41 disposed on the bottom plate 51 of the casing 50 and a cylinder erected on the bottom plate 41. A wall 42 and a top plate 43 that closes the upper end of the wall 42 are formed. A spacer 44 made of a heat insulating material is disposed between the heat insulating container 40 and the casing 50, and a space is provided between the outer periphery and upper part of the heat insulating container 40 and the inner periphery and upper part of the casing 50. .

  As a heat insulating material forming the heat insulating container 40 and the spacer 44, for example, a porous material such as a carbon felt (carbon fiber) molded body is used. In addition, it is difficult to coat the porous material with SiC (silicon carbide) up to the surface of the internal pores, and even if the coating is applied, the coating may be peeled off due to thermal expansion in long-term use. . For this reason, when the temperature is about 650 ° C. or higher and the heat insulating material made of carbon fiber is in contact with the raw material gas, byproducts (impurities) such as methane gas may be generated. Therefore, in order to suppress the generation of by-products (impurities) such as methane gas due to the reaction with the raw material gas, it is required to suppress the temperature rise of the heat insulating container 40.

  The reaction vessel 20 is made of, for example, graphite coated with silicon carbide as necessary, CC composite (carbon fiber reinforced carbon composite material), or the like, and is accommodated in the heat insulation vessel 40. The reaction container 20 closes the cylindrical outer wall body 21 disposed on the bottom plate 41 of the heat insulating container 40 so as to be separated from the inside of the wall body 42 of the heat insulating container 40 and the upper end of the outer wall body 21. The top plate 22 and a cylindrical first inner wall member 23 arranged at a substantially center of the outer wall member 21 so as to be spaced apart from the top plate 22 are configured. The outer wall body 21 and the first inner wall body 23 are provided substantially concentrically with respect to the wall body 42 of the heat insulating container 40 to form a cylindrical space. A plurality of first flow holes 21a are provided radially at the lower portion of the outer wall body 21 at substantially equal intervals in the circumferential direction.

  Furthermore, the reaction vessel 20 has a plurality of dispersion holes 24a therein, a plate-like inlet-side dispersion plate 24 provided substantially horizontally at a lower portion of the reaction vessel 20 so as to be separated from the bottom plate 41, and a plurality of dispersion holes. And an outlet side dispersion plate 25 provided substantially horizontally so as to be separated from the top plate 22 at the top of the reaction vessel 20. The dispersion holes 24a and 25a penetrate the respective dispersion plates 24 and 25 and are uniformly distributed.

  A cylindrical space surrounded by the inlet-side dispersion plate 24, the outlet-side dispersion plate 25, the outer wall body 21, and the first inner wall body 23 is a reaction chamber 11 in which the source gas is heated. 11 is provided with a heater 30. A gas introduction chamber 12 as a buffer chamber for uniformly introducing the raw material gas into the reaction chamber 11 is introduced below the inlet side dispersion plate 24, and a reaction gas from the reaction chamber 11 is located above the outlet side dispersion plate 25. This is a gas outlet chamber 13 serving as a buffer chamber that is led out and retained. That is, the gas lead-out chamber 13 is formed between the outer wall 21 and the second inner wall 26, and the reaction gas is allowed to stay at a high temperature so that the conversion reaction proceeds more reliably.

  A gas outlet pipe 71 for discharging the reaction gas from the apparatus 10 is connected to the lower end portion of the first inner wall body 23 that communicates with the central portion of the gas outlet chamber 13. That is, the inside of the first inner wall body 23 and the gas outlet pipe 71 is a gas outlet passage 14 for taking out the reaction gas from the trichlorosilane manufacturing apparatus 10.

  The heater 30 for heating the inside of the reaction chamber 11 is erected so that a plurality of heating elements 31 and an electrode 32 supporting the lower portion of the heating element 31 penetrate the bottom plates 41 and 51, and passes through the gas introduction chamber 12. It protrudes into the reaction chamber 11 through the dispersion holes 24a of the inlet side dispersion plate 24 and is provided so as to extend in the vertical direction. As shown in FIG. 2, a plurality of heating elements 31 are arranged at intervals so as to form a plurality of circumferential rows (three rows in this embodiment), and a plurality of heating elements 31 are connected in series. Resistance is generated by supplying a current through the resistor. That is, the heating elements 31 of the heaters 30 are arranged in a concentric ring shape with a gap in the radial direction, and the upper end portions thereof extend to a position slightly below the outlet-side dispersion plate 25, Are evenly arranged.

  The heating element 31 of the heater 30 is made of carbon coated with silicon carbide (SiC), and the upper portion disposed in the reaction chamber 11 is formed thinner than the lower portion, and the inlet side dispersion plate 24 is dispersed. The cross-sectional area is smaller than the area of the hole 24a. Therefore, the source gas flows through the dispersion holes 24a through the gaps formed around the heating element. Moreover, since the lower part of the heat generating body 31 arranged in the gas introduction chamber 12 has a larger cross-sectional area than the upper part, the heat generation amount is small.

  The dispersion holes 25a provided in the outlet side dispersion plate 25 are provided by being dispersed at an appropriate size and interval. However, the dispersion holes 25a are not aligned with the dispersion holes 24a of the inlet side dispersion plate 24 in the vertical direction as much as possible. It is preferable to disperse them in the direction or to disperse them evenly as through holes smaller than the dispersion holes 24a of the inlet side dispersion plate 24.

  The gas outlet chamber 13 is formed between the outlet side dispersion plate 25, the top plate 22, the outer wall body 21, and the second inner wall body 26 arranged concentrically with the outer wall body 21. The wall body 26 communicates with the inside of the first inner wall body 23 (that is, the gas outlet passage 14) through fourth circulation holes 26a formed radially at substantially equal intervals in the circumferential direction.

  Therefore, in the reaction vessel 20, first, the raw material gas introduced into the gas introduction chamber 12 through the first flow hole 21 a flows upward through the dispersion holes 24 a of the inlet side dispersion plate 24 and is uniformly dispersed in the reaction chamber 11. be introduced. The source gas is directly heated by the heater 30 in the reaction chamber 11 and reacts at a high temperature, flows out into the gas outlet chamber 13 through the dispersion holes 25a of the upper outlet side dispersion plate 25, and further flows into the gas outlet passage 14. It is taken out from the trichlorosilane manufacturing apparatus 10 through.

  The gas supply channel 15 for supplying the raw material gas to the reaction vessel 20 is provided along the outer peripheral surface of the reaction vessel 20 so as to surround the outer side surface of the reaction vessel 20. That is, a disc-like space 15A between the top plate 22 of the reaction vessel 20 and the top plate 43 of the heat insulation vessel 40, and a cylindrical shape between the outer wall 21 of the reaction vessel 20 and the wall 42 of the heat insulation vessel 40. The space 15B constitutes a gas supply flow path 15 to the reaction vessel 20.

  The disc-shaped space 15A includes a top plate 22 of the reaction vessel 20, a top plate 43 of the heat insulating vessel 40, a cylindrical inner wall body 60 disposed concentrically between the top plates 22 and 43, and an outer wall body. (Partition wall) 61. As shown in FIG. 3, the disk-shaped space 15 </ b> A penetrates the inner wall body 60 and the gas supply pipe 70 and has a plurality of third flow holes 60 a provided radially at substantially equal intervals in the circumferential direction. The source gas is supplied from the gas supply pipe 70 at the center position. The supplied source gas spreads uniformly in the disk-shaped space 15A, and enters the cylindrical space 15B through a plurality of second circulation holes 61a provided radially at substantially equal intervals in the outer wall 61. leak. Since the total opening area of the second flow hole 61a on the outflow side is smaller than the total opening area of the third flow hole 60a on the inflow side, the source gas is filled in the disk-shaped space 15A by the flow resistance, and the second It is uniformly introduced into the cylindrical space 15B through the circulation hole 61a.

  In addition, a ring-shaped plate 62 that blocks heat transfer from the top plate 22 of the reaction vessel 20 to the top plate 43 of the heat insulating container 40 is provided in the disc-shaped space 15A substantially parallel to the top plates 22 and 43. (See FIG. 3). That is, when the raw material gas passes through the disk-shaped space 15A, it contacts and cools the top plate 22 and the ring-shaped plate 62 of the reaction vessel 20 and is preheated by the top plate 22 and the ring-shaped plate 62. Is done. Thereby, the temperature rise of the top plate 43 of the heat insulation container 40 is suppressed, and the generation of by-products such as methane due to the reaction between the raw material gas and the top plate 43 made of carbon felt is suppressed.

  The cylindrical space 15 </ b> B is formed between the outer wall 61 that forms the disk-shaped space 15 </ b> A, the outer wall 21 of the reaction vessel 20, and the wall 42 of the heat insulating vessel 40. The raw material gas flows into the cylindrical space 15B from the disk-shaped space 15A through the plurality of second circulation holes 61a. The introduced raw material gas spreads uniformly in the cylindrical space 15B and flows out into the gas introduction chamber 12 of the reaction vessel 20 through the first flow hole 21a provided in the wall 21 of the reaction vessel 20. Since the total opening area of the first flow hole 21a on the outflow side is smaller than that of the second flow hole 61a on the inflow side, the raw material gas is filled in the cylindrical space 15B by the flow resistance, and the reaction vessel 20 (gas introduction chamber) 12) is uniformly introduced.

  The raw material gas cools the outer wall 21 of the reaction vessel 20 and is preheated by the outer wall 21 while flowing through the cylindrical space 15B. Thereby, the temperature rise of the wall 42 of the heat insulation container 40 is suppressed, and it is possible to suppress the generation of by-products such as methane due to the reaction between the source gas and the wall 42 made of carbon felt.

  In the trichlorosilane manufacturing apparatus 10 configured as described above, the heating element of the heater 30 is set to a heat generation state of about 1100 ° C., for example, and a source gas of about 400 ° C. is supplied through the gas supply pipe 70. The source gas is first guided from the disk-shaped space 15A to the cylindrical space 15B, and is preheated to about 500 to 550 ° C., for example, by receiving heat from the outer surface of the reaction vessel 20. Thereby, the temperature rise of the heat insulation container 40 is suppressed. The source gas is introduced into the gas introduction chamber 12 in the reaction vessel 20 from the first flow hole 21 a at the lower end of the outer wall 21, and flows through the reaction chamber 11 from the respective dispersion holes 24 a of the inlet-side dispersion plate 24. To do.

  In the disc-like space 15A of the source gas supply flow path 15, the total opening area of the second flow hole 61a on the outflow side is smaller than the total opening area of the third flow hole 60a on the inflow side, so that the source gas flows. The disk-shaped space 15A is filled with resistance and flows into the cylindrical space 15B. In the downstream cylindrical space 15B as well, the total opening area of the first flow hole 21a on the outflow side is smaller than the total opening area of the second flow hole 61a on the inflow side. The cylindrical space 15B is filled and flows into the reaction vessel 20. Thereby, the source gas flows evenly through the source gas supply flow path 15 without being biased, and is supplied to the reaction vessel 20 in a preheated state.

  In the reaction chamber 11, the components of the reaction vessel 20 and the heating elements 31 of the heater 30 are coated with silicon carbide so that impurities are not generated by reaction with the source gas. In the gas introduction chamber 12, the raw material gas flows near the lower end of the heater 31. At this time, the temperature of the raw material gas is about 500 to 600 ° C., and the reaction temperature between carbon and hydrogen in the raw material gas ( Therefore, it is possible to prevent the generation of impurities such as methane and methylchlorosilane.

  Since each heating element 31 of the heater 30 is inserted in each dispersion hole 24a of the inlet side dispersion plate 24, the source gas flows along the surface of the heating element 31 by passing through each dispersion hole 24a. Therefore, the heat from the heating element 31 is directly transferred to the raw material gas so that the raw material gas is heated at a high heat exchange rate, and the conversion rate to trichlorosilane can be improved. The reaction gas is guided to the gas outlet chamber 13 via the respective dispersion holes 25 a of the outlet side dispersion plate 25, stays in the gas outlet chamber 13, and then passes through the fourth flow holes 26 a of the second inner wall body 26. It is led out to the gas lead-out channel 14.

  In this trichlorosilane manufacturing apparatus 10, the components of the reaction vessel 20 made of carbon coated with silicon carbide (the outer wall body 21, the top plate 22, the first inner wall body 23, the respective dispersion plates 24 and 25, the second inner wall wall). Body 26, etc.) and each heating element 31 of the heater 30, the carbon reacts with hydrogen, chlorosilane, and hydrogen chloride in the source gas and reaction gas to produce methane, methylchlorosilane, etc. Can be prevented. The heat insulating container 40 is formed of a carbon felt molded body that is difficult to coat with silicon carbide, but the source gas supply flow path 15 is provided so as to surround the reaction container 20 between the reaction container 20 and a high temperature. Since the reaction vessel 20 is cooled by the raw material gas and the temperature rise of the heat insulating vessel 40 is suppressed, the reaction between the carbon fiber and the raw material gas can be prevented. Therefore, according to this trichlorosilane manufacturing apparatus 10, highly purified trichlorosilane can be obtained with high efficiency.

  Further, when the reaction chamber 11 is enlarged, the heating elements 31 of the heater 30 can be increased so that the heating elements can be arranged evenly in the large reaction chamber. Is suitable.

  FIG. 4 shows another embodiment of the present invention. The trichlorosilane production apparatus 110 has a configuration in which the raw material gas supply flow path 15 in the trichlorosilane production apparatus 10 of FIG. 1 is directed in one direction from the upper side to the lower side. The source gas supply channel 115 is made to meander up and down by concentrically providing cylindrical wall bodies 63 and 64 made of the same material as the reaction vessel 120 so as to surround the reaction vessel 120 therebetween. Other configurations are substantially the same as those of the embodiment shown in FIG. Therefore, the same reference numerals are given to common parts with the embodiment of FIG.

  In this embodiment, cylindrical wall bodies 63 and 64 are concentrically spaced from each other in the radial direction between the top plate 122 of the reaction vessel 120 and the flange portion 121 a formed at the lower portion of the outer wall body 121. It is provided in the shape. The reaction container 120 and the heat insulating container 40 are partitioned by these wall bodies 63 and 64, and a plurality of through holes 63 a formed in the lower part of the outer wall body 63 and the inner wall body 64 are formed between these sections. Are communicated by a plurality of through holes 64a formed in the upper part. The source gas supply flow path 115 formed in this way is connected to the inside of the reaction vessel 120 via the first flow hole 121b provided in the lower part of the outer wall 121.

  Accordingly, the raw material gas is preheated while gradually approaching the high-temperature reaction vessel 120 while flowing through the supply channel formed in triplicate between the reaction vessel 120 and the heat insulation vessel 40. In addition, since the wall bodies 63 and 64 are erected between the reaction container 120 and the heat insulation container 40, heat transfer from the reaction container 120 to the heat insulation container 40 is performed by the wall bodies 63 and 64. Blocked. Thereby, in this trichlorosilane manufacturing apparatus 110, the heat transfer to the heat insulation container 40 can be more reliably interrupted, the temperature rise of the heat insulation container 40 can be effectively suppressed, and the production of by-products such as methane can be suppressed. it can.

  In this embodiment as well, it is preferable that the total opening area of each flow hole in the raw material gas supply channel is made smaller toward the downstream, and the raw material gas is made to flow while being filled in each chamber by flow resistance.

In addition, this invention is not limited to the thing of the structure of the said embodiment, In a detailed structure, it is possible to add a various change in the range which does not deviate from the meaning of this invention.
For example, in the above embodiment, the source gas is supplied to the upper part of the trichlorosilane manufacturing apparatus and the reaction gas is taken out from the lower part of the trichlorosilane manufacturing apparatus. However, the source gas may be supplied to the lower part of the trichlorosilane manufacturing apparatus. Further, the reaction gas may be taken out from the upper part of the trichlorosilane production apparatus.

DESCRIPTION OF SYMBOLS 10,110 Trichlorosilane manufacturing apparatus 11 Reaction chamber 12 Gas introduction chamber 13 Gas extraction chamber 14 Gas extraction flow path 15,115 Raw material gas supply flow path 15A Disk-shaped space 15B Cylindrical space 20,120 Reaction vessel 21,121 Outer wall Body 21a, 121b First flow hole 121a Flange portion 22, 122 Top plate 23 First inner wall body 24 Inlet side dispersion plate 24a Dispersion hole 25 Outlet side dispersion plate 25a Dispersion hole 26 Second inner wall body 26a Fourth flow hole 30 Heater 31 Heating element 32 Electrode 40 Thermal insulation container 41 Bottom plate 42 Wall body 43 Top plate 44 Spacer 50 Casing 51 Bottom plate 52 Tube wall 53 Top plate 60 Inner wall body 60a Third flow hole 61 Outer wall body (partition wall)
61a Second flow hole 62 Ring-shaped plate 63, 64 Wall body 63a, 64a Through hole 70 Gas supply pipe 71 Gas outlet pipe

Claims (4)

An apparatus for producing trichlorosilane from a raw material gas containing tetrachlorosilane and hydrogen,
A reaction vessel having a reaction chamber that is supplied with the raw material gas and generates a reaction gas containing trichlorosilane and hydrogen chloride;
A heater provided in the reaction chamber for heating the source gas;
A heat insulating container provided so as to cover the periphery of the reaction container;
A gas supply passage provided between the heat insulating container and the reaction container so as to surround the reaction container, and supplying the source gas to the reaction chamber;
An apparatus for producing trichlorosilane, comprising: Each of the heat insulating container and the reaction container includes a top plate and a substantially cylindrical wall,
The gas supply flow path is formed between the top plate of the heat insulating container and the top plate of the reaction container, and is a disk-shaped space to which the source gas is supplied from the outside of the apparatus. A cylindrical space formed between a wall and the wall of the reaction vessel,
A plurality of first flow holes for connecting the cylindrical space and the inside of the reaction vessel to flow the source gas in the wall body of the reaction vessel are provided radially at substantially equal intervals in the circumferential direction. The apparatus for producing trichlorosilane according to claim 1, wherein A partition that partitions the disk-shaped space and the cylindrical space;
The partition wall is provided with a plurality of second flow holes that circulate the raw material gas by connecting these spaces, and are provided radially at substantially equal intervals in the circumferential direction.
The trichlorosilane production apparatus according to claim 2, wherein a total opening area of the first circulation holes is smaller than a total opening area of the second circulation holes. A plurality of third flow holes for circulating the source gas are provided radially at substantially equal intervals in the circumferential direction, and the source gas supply for supplying the source gas to the disk-like space through the third flow holes With a tube,
The trichlorosilane production apparatus according to claim 3, wherein the total opening area of the second circulation holes is smaller than the total opening area of the third circulation holes.

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