JP2012089571A - Resin composition and manufacturing method of electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin composition having high connection reliability of an electrode terminal, and a manufacturing method of an electronic device using the resin composition.SOLUTION: A resin composition 130 is introduced between a solder bump 111 of a first substrate 110 and a solder bump 121 of a second substrate 120 and thermally hardened after solder joint when the solder joint between the solder bump 111 of the first substrate 110 and the solder bump 121 of the second substrate 120 is performed, where the resin composition includes a thermosetting resin, and a gel time in 180°C and 250°C is 100 seconds or more.

Description

  The present invention relates to a resin composition and a method for manufacturing an electronic device.

  In recent years, semiconductor packages and electronic components have been reduced in size, thickness, and size. Among such semiconductor package products, a flip chip type mounting method that can be directly connected vertically instead of the conventional lead frame bonding is regarded as important.

  Therefore, terminals are also miniaturized by miniaturization of wiring for exchanging electronic information in the semiconductor package. On the other hand, in order to cope with environmental problems, lead-free solder and the like used for terminal joining and the like are progressing. Therefore, voids are easily generated in a resin material such as a bonding adhesive, and there is a problem of how to reduce the voids. As a method for reducing the voids, resin composition materials and mounting methods have been improved (for example, Patent Documents 1 and 2).

  Further, as a method for reducing voids in the resin material, a curing method in a pressurized fluid has been proposed (for example, Patent Documents 3 and 4).

JP 2003-158154 A JP-T-2006-505664 JP 2002-57175 A JP 2008-98608 A

  However, the technique described in the above patent document does not sufficiently suppress voids generated when the resin material is cured. Therefore, there is still room for improvement in terms of realizing more reliable terminal bonding.

  The present invention provides a resin composition having high connection reliability of electrode terminals, and a method for producing an electronic device using the resin composition.

  The present inventors have found that the above problem can be solved by using a resin composition having a specific gel time.

  That is, according to the present invention, when the electrode terminal of the substrate and the electrode terminal of the semiconductor chip are soldered together, the heat is introduced after soldering and joining between the electrode terminal of the substrate and the electrode terminal of the semiconductor chip. A resin composition that cures, wherein the resin composition includes a thermosetting resin and has a gel time of 100 seconds or more at 180 ° C. and 250 ° C. is provided.

  In addition, according to the present invention, there is provided a method for manufacturing an electronic device in which an electrode terminal of a substrate and an electrode terminal of a semiconductor chip are joined by soldering, wherein the electrode terminal of the substrate and the electrode terminal of the semiconductor chip Introducing a resin composition between the substrate and the semiconductor chip while melting and bonding the electrode terminal of the substrate and the electrode terminal of the semiconductor chip. And a step of thermosetting the resin composition, wherein the resin composition is a resin composition specified above.

  In the present invention, the resin composition has a gel time at 180 ° C. and 250 ° C. of 100 seconds or more. That is, since the gel time at 250 ° C. is 100 seconds or more, in the temperature region higher than the melting point of the solder, the curing rate of the resin composition is slowed down, so that the fluidity of the resin composition is obtained even after soldering, Void formation in the finally obtained electronic device is suppressed, and connection reliability can be improved. On the other hand, when the gel time at 180 ° C. is 100 seconds or more, the curing rate of the resin composition is slowed in a temperature region lower than the melting point of the solder. By being held, formation of voids can be suppressed.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the electronic device manufactured using the resin composition with high connection reliability of an electrode terminal and this resin composition is provided.

It is process drawing which shows 1 process of the manufacturing method of the electronic device of embodiment of this invention. It is process drawing which shows 1 process of the manufacturing method of the electronic device of embodiment of this invention. It is process drawing which shows 1 process of the manufacturing method of the electronic device of embodiment of this invention.

  Hereinafter, this embodiment will be described.

[Electronic device]
As shown in FIG. 3, in the electronic device 100, the solder bump 111 formed on one surface of the first substrate 110 and the solder bump 121 formed on one surface of the second substrate 120 are individually joined to each other. A resin layer 130 is filled between the substrate 110 and the second substrate 120.

(Resin composition)
First, the resin composition used for the resin layer 130 will be described. The resin composition according to the present invention is used when the solder bump 111 formed on one surface of the first substrate 110 and the solder bump 121 formed on one surface of the second substrate 120 are soldered together. This resin composition is introduced between the solder bumps 111 formed on one surface and the solder bumps 121 formed on one surface of the second substrate 120, and is thermally cured after soldering. In other words, in the electronic device 100 finally obtained, the resin layer 130 may be formed so as to fill the gap between the first substrate 110 and the second substrate 120. In the present embodiment, the second substrate 120 is a semiconductor chip.

  The resin composition in the present invention has a gel time at 180 ° C. and 250 ° C. of 100 seconds or more. That is, it means that the gel time of the resin composition of the present invention is 100 seconds or more in both the lower and higher areas than the solder melting point of the solder bumps 111 and 121.

  The gel time is the time from when the resin composition starts to be heated at a predetermined temperature until the resin composition loses fluidity, the viscosity rapidly increases, and gels. The gelation is not limited to the case where all resin compositions lose their fluidity and are gelled.

  Here, when considering the process up to the normal solder connection, it is considered that a sufficient time for connection is sufficient if approximately 10 seconds are exposed at a temperature higher than the solder melting point. Therefore, when the gel time at a temperature higher than the melting point of the solder, for example, 250 ° C. is 100 seconds or more, the fluidity of the resin composition can be maintained at the time of solder bonding, and voids are hardly formed in the resin composition. For example, the gel time at a temperature higher by 10 ° C. to 50 ° C. than the melting point of the solder may be 100 seconds or more.

  On the other hand, for example, in the conveyor type surface mounting method called reflow, the time at 220 ° C. in which the solder is heated to the melting point or more is generally 50 to 80 seconds. Therefore, when the gel time at a temperature higher than the melting point of the solder, for example, 180 ° C. is 100 seconds or more, it is difficult to start the gelation before melting the solder and it can be said that the fluidity is maintained. Can be suppressed. For example, the gel time at a temperature 10 ° C. to 50 ° C. lower than the melting point of the solder may be 100 seconds or more.

  Such gel time is appropriately adjusted by controlling the reactivity of the resin composition.

  Moreover, it is preferable that the melt viscosity at 120 degreeC of the resin composition in this invention is 0.01 Pa.s or more and 10,000 Pa.s or less. Thereby, since the fluidity | liquidity of a resin composition is maintained, it becomes difficult to form a void in a resin composition. More preferably, the resin composition has a melt viscosity at 120 ° C. of 0.01 or more and 5,000 or less. The melt viscosity is appropriately adjusted by reducing the viscosity of the constituent raw materials or using a diluent or the like.

  Moreover, it is preferable that the reaction start temperature of the resin composition in this invention is 100 degreeC or more and 160 degrees C or less. The reaction start temperature is a temperature at which curing of the resin composition has started, and can be measured using, for example, a thermal analyzer (DSC). 110 degreeC or more is more preferable from a viewpoint which can lengthen the floor life in a mounting process. Moreover, 150 degreeC or less is more preferable from a viewpoint which can perform a low temperature process in the case of postcure. The reaction start temperature is appropriately adjusted by adjusting the type and amount of the curing accelerator or controlling the reactivity of the constituent components.

  Or it is preferable that the peak temperature of a resin composition is 130 to 300 degreeC. 150 degreeC or more is more preferable from a viewpoint which can suppress so that reaction may not advance during a mounting process. Moreover, 260 degreeC or less is more preferable from a viewpoint which can complete | finish a reaction efficiently in the case of post-curing, and can advance an effect below the limit temperature of a semiconductor device. The peak temperature is the temperature at which the reaction is most active. The peak temperature can be adjusted by adjusting the type and amount of the curing accelerator or controlling the reactivity of the constituent components.

  In the present embodiment, the resin composition filling method is, for example, (i) when the resin composition according to the present invention is liquid at room temperature, a support or adherend such as the first substrate 110 and the solder bump 111 as it is. When the resin composition according to the present invention is solid at room temperature, the resin varnish is once dissolved or dispersed in a solvent to form a resin varnish. Examples include a method of forming a resin layer by applying to an adherend, and (ii) a method of forming the resin composition according to the present invention into a film and laminating the film on a support or an adherend. .

  In addition, in the manufacturing method of the electronic device 100 described below, (ii) the case where the resin layer 130 molded into a film shape is used will be described, but the method (i) may be used.

(I) When forming a resin layer The thermosetting resin contained in the resin composition according to the present invention is not particularly limited. For example, an epoxy resin, an oxetane resin, a phenol resin, a (meth) acrylate resin, Saturated polyester resin, diallyl phthalate resin, maleimide resin and the like can be mentioned, and among these, epoxy resin is preferable. Epoxy resins are preferably used because they are excellent in curability and storage stability, heat resistance of cured products, moisture resistance, chemical resistance, and the like.

  The epoxy resin contained in the resin composition according to the present invention may be either an epoxy resin that is solid at room temperature or an epoxy resin that is liquid at room temperature, or both of them. When the resin composition according to the present invention contains an epoxy resin, the degree of freedom in designing the melting behavior of the resin layer can be further increased.

  Among the epoxy resins contained in the resin composition according to the present invention, the epoxy resin that is solid at room temperature is not particularly limited. For example, bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, Examples include cresol novolac type epoxy resins, glycidyl amine type epoxy resins, glycidyl ester type epoxy resins, trifunctional epoxy resins, and tetrafunctional epoxy resins. More specifically, those containing both a solid trifunctional epoxy resin and a cresol novolac type epoxy resin may be mentioned, and these may be used alone or in combination of two or more.

  Among the epoxy resins contained in the resin composition according to the present invention, the epoxy resin that is liquid at room temperature is not particularly limited, and examples thereof include bisphenol A type epoxy resins and bisphenol F type epoxy resins. It may be used alone or in combination of two or more. The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300, more preferably 160 to 250, and still more preferably 170 to 220. As a result, it is possible to prevent the shrinkage rate in the cured product of the resin layer from increasing, to reliably prevent warpage of the electronic device, and to reliably reduce the reactivity with the polyimide resin. Is prevented.

  In the resin composition according to the present invention, the blending amount of the thermosetting resin is preferably 25 to 75% by weight, particularly preferably 45 to 70% by weight, of the constituent material of the resin composition. When the thermosetting resin content in the resin composition is within the above range, it is possible to obtain good curability when curing the thermosetting resin and to design a good melting behavior of the resin layer. It becomes.

  The resin composition according to the present invention may contain a flux activator. In the present embodiment, the flux activator is a compound having a flux action. Thereby, in the solder bonding step, the oxide film covering the surface of the solder is removed, so that good solder bonding can be performed. Although it does not specifically limit as a compound which has a flux effect | action, The compound provided with either a carboxyl group or a phenolic hydroxyl group, or both a carboxyl group and a phenolic hydroxyl group is preferable.

  The compound having a flux function having a carboxyl group means a compound having one or more carboxyl groups in the molecule, and may be liquid or solid. The compound having a phenolic hydroxyl group and having a flux action means a compound having one or more phenolic hydroxyl groups in the molecule, and may be liquid or solid. Further, the compound having a flux action comprising a carboxyl group and a phenolic hydroxyl group refers to a compound in which one or more carboxyl groups and phenolic hydroxyl groups are present in the molecule, and may be liquid or solid.

  Among these, examples of the compound having a flux function having a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids.

  Examples of the aliphatic acid anhydride relating to the compound having a flux function having a carboxyl group include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, and polysebacic acid anhydride.

  Examples of alicyclic acid anhydrides related to a compound having a carboxyl group and having a flux action include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, Examples include alkyltetrahydrophthalic anhydride and methylcyclohexene dicarboxylic acid anhydride.

  Aromatic acid anhydrides relating to compounds having a carboxyl group-containing flux function include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitate, glycerol tristrimellitic acid. Tate etc. are mentioned.

  Examples of the aliphatic carboxylic acid related to the compound having a flux group having a carboxyl group include a compound represented by the following general formula (1), formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid pivalate, caprylic acid, Examples thereof include lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, and succinic acid.

_{HOOC- (CH 2) n-COOH} (1)
(In formula (1), n represents an integer of 0 or more and 20 or less.)

  Aromatic carboxylic acids related to the compound having a flux function with a carboxyl group include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, planitic acid, pyromellitic acid , Meritic acid, triylic acid, xylic acid, hemelic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5 -Dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3 , Naphthoic acid derivatives such as 5-dihydroxy-2-naphthoic acid, phenolphthaline, diphf Such as Nord acid, and the like.

  Among these compounds having a flux function with carboxyl groups, the activity of the compound having a flux function, the amount of outgas generated when the resin layer is cured, the elastic modulus of the cured resin layer, the glass transition temperature, etc. From the viewpoint of good balance, the compound represented by the general formula (1) is preferable. And among the compounds shown by said general formula (1), while the compound whose n in Formula (1) is 3-10 can suppress that the elasticity modulus in the resin layer after hardening increases. It is particularly preferable in that the adhesion between the support and the adherend can be improved.

Among the compounds represented by the general formula (1), as the compound in which n in the formula (1) is 3 to 10, for example, n = 3 glutaric acid (HOOC— (CH ₂ ) ₃ —COOH), n = 4 adipic acid (HOOC— (CH ₂ ) ₄ —COOH), n = 5 pimelic acid (HOOC— (CH ₂ ) ₅ —COOH), n = 8 sebacic acid (HOOC— (CH ₂ ) ₈ -COOH) and of _{n = 10 HOOC- (CH 2)} 10 -COOH , and the like.

  Examples of the compound having a phenolic hydroxyl group and having a flux action include phenols, and specifically, for example, phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol. 2,4-xylenol, 2,5 xylenol, m-ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tertiarybutylphenol, catechol, p-tertiaryamylphenol, resorcinol, p- Mo-containing phenolic hydroxyl groups such as octylphenol, p-phenylphenol, bisphenol A, bisphenol F, bisphenol AF, biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol Mer, phenol novolak resins, o- cresol novolak resin, bisphenol F novolac resin, bisphenol A novolac resins.

  A compound having either a carboxyl group or a phenolic hydroxyl group as described above, or a compound having both a carboxyl group and a phenolic hydroxyl group is incorporated three-dimensionally by reaction with a thermosetting resin such as an epoxy resin.

  Therefore, from the viewpoint of improving the formation of the three-dimensional network of the epoxy resin after curing, the compound having a flux action is a compound having a flux action and acting as a curing agent for the epoxy resin, that is, flux. An active curing agent is preferred. Examples of the flux active curing agent include, in one molecule, two or more phenolic hydroxyl groups that can be added to an epoxy resin, and one or more carboxyls directly bonded to an aromatic group that exhibits a flux action (reduction action). And a compound having a group. Such flux active curing agents include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,4- Benzoic acid derivatives such as dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,7- Examples thereof include naphthoic acid derivatives such as dihydroxy-2-naphthoic acid; phenolphthaline; and diphenolic acid. These may be used alone or in combination of two or more.

  The content of the compound having a flux action is preferably 1 to 30% by weight, particularly preferably 3 to 20% by weight, based on the resin composition. When the compounding amount of the compound having the flux action in the resin layer is within the above range, the flux activity of the resin layer can be improved, and the resin layer has an unreacted flux action with the thermosetting resin. The remaining compound can be suppressed. Note that migration may occur if a compound having an unreacted flux action remains.

  Among the compounds that act as curing agents for thermosetting resins, there are compounds that also have a flux action. For example, phenol novolak resins, cresol novolak resins, aliphatic dicarboxylic acids, aromatic dicarboxylic acids and the like that act as a curing agent for epoxy resins also have a flux action.

  Further, the resin composition according to the present invention preferably contains a curing agent other than the compound having a flux action. Thereby, the sclerosis | hardenability of a thermosetting resin can be improved more.

  It does not specifically limit as a hardening | curing agent contained in the resin composition which concerns on this invention, For example, phenols, amines, and thiols are mentioned. When the resin composition according to the present invention contains an epoxy resin as a thermosetting resin, the curing agent is preferably a phenol. When the resin composition according to the present invention contains an epoxy resin as a thermosetting resin, the curing agent is phenols, whereby in the resin layer, good reactivity with the epoxy resin can be obtained. Can obtain a low dimensional change during curing of the epoxy resin contained in the resin layer and appropriate physical properties after curing (for example, heat resistance, moisture resistance, etc.).

  When the resin composition according to the present invention contains an epoxy resin as a thermosetting resin, the phenols contained as a curing agent are not particularly limited, but have two or more functional groups capable of reacting with the epoxy resin. Is preferred. Thereby, the characteristic (for example, heat resistance, moisture resistance, etc.) of the hardened | cured material of the epoxy resin in a resin layer can be aimed at.

  Specific examples of phenols having two or more functional groups capable of reacting with such epoxy resins include, for example, bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, and trisphenol. , Tetrakisphenol, phenol novolacs, cresol novolacs and the like. Of these, phenol novolacs and cresol novolacs are preferable. Thereby, the melt viscosity of a resin layer can be made suitable and the reactivity with an epoxy resin can be improved. Furthermore, the characteristics (for example, heat resistance, moisture resistance, etc.) of the cured epoxy resin in the resin layer can be further improved.

  When phenol novolacs are used as the curing agent contained in the resin composition according to the present invention, the compounding amount of the curing agent in the resin composition according to the present invention is 5 to 30% by weight of the constituent material of the resin composition. 10 to 25% by weight is particularly preferable. When the blending amount of the curing agent in the resin composition is in the above range, the thermosetting resin can be reliably cured in the resin layer, and the thermosetting resin and unreacted curing in the resin layer. The agent is prevented from remaining, and migration due to the presence of the residue can be suitably prevented.

  In addition, when the thermosetting resin contained in the resin composition which concerns on this invention is an epoxy resin, the compounding quantity of a phenol novolak resin may be prescribed | regulated by the equivalent ratio with respect to an epoxy resin. Specifically, the equivalent ratio of phenol novolacs to epoxy resin is preferably 0.5 to 1.2, particularly preferably 0.6 to 1.1, and 0.7 to 0.98. More preferably. When the blending amount of the phenol novolac resin with respect to the epoxy resin is in the above range, the thermosetting resin can be reliably cured in the resin layer, and the thermosetting resin and the unreacted curing agent in the resin layer. The occurrence of migration due to the presence of this residue can be suitably prevented.

  The resin composition according to the present invention can further contain, for example, an imidazole compound having a melting point of 150 ° C. or higher as a curing accelerator in addition to the above-described curing agent. Thereby, hardening of a resin layer can be performed reliably and the reliability of an electronic device can be improved. Examples of the imidazole compound having a melting point of 150 ° C. or higher include 2-phenylhydroxyimidazole and 2-phenyl-4-methylhydroxyimidazole. In addition, there is no restriction | limiting in particular in the upper limit of melting | fusing point of an imidazole compound, For example, it sets suitably according to the heating temperature in the case of hardening of a resin layer.

  When the resin composition according to the present invention contains such an imidazole compound as a curing accelerator, the blending amount of the curing agent in the resin composition is 0.005 to 10% by weight of the constituent material of the resin composition. Is preferable, and 0.01 to 5 weight% is especially preferable. When the blending amount of the curing agent in the resin composition is within the above range, the function as a curing accelerator of the thermosetting resin is more effectively exhibited, and the curability of the thermosetting resin is increased in the resin layer. In addition to improving the melt viscosity of the resin layer at the temperature at which the solder melts in the resin layer, a good solder joint can be obtained.

  In addition, the hardening accelerator as described above may be a single type or a combination of two or more types.

  Further, the resin composition according to the present invention includes a filler, a coupling agent, a flux activator for enhancing the activity of the compound having a flux action, a resin having a flux action, and a resin having a flux action. You may contain suitably the various additives for improving various characteristics, such as compatibility, stability, workability | operativity.

  When the resin composition according to the present invention contains a coupling agent, the adhesion of the resin layer to the support and the adherend can be further enhanced.

  Examples of the coupling agent include an epoxy silane coupling agent and a silane coupling agent such as an aromatic-containing aminosilane coupling agent, and these may be used alone or in combination of two or more.

  In the resin composition according to the present invention, the amount of the silane coupling agent is preferably 0.01 to 5% by weight of the constituent material of the resin composition.

  When the resin composition according to the present invention is used as a resin varnish, the solvent is not particularly limited, but is preferably inert to the constituent materials of the resin composition as described above. For example, acetone, methyl ethyl ketone , Ketones such as methyl isobutyl ketone, diisobutyl ketone (DIBK), cyclohexanone, diacetone alcohol (DAA); aromatic hydrocarbons such as benzene, xylene, toluene; methyl alcohol, ethyl alcohol, isopropyl alcohol, n-butyl alcohol Alcohols such as methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, butyrocellosolve acetate (BCSA), etc .; N-methyl-2-pyrrolidone (NMP), tet Hydrofuran (THF), dimethylformamide (DMF), dibasic acid ester (DBE), 3- ethyl ethoxypropionate (EEP), dimethyl carbonate (DMC) and the like. In the resin varnish, the content of the solvent is preferably 10 to 60% by weight of the solid component mixed in the solvent.

(Ii) In the case of forming a film When the resin composition according to the present invention is formed into a film shape and used, the resin composition according to the present invention can be used in addition to the compound having the flux action and the thermosetting resin. It is preferable to contain a film-forming resin. When the resin composition according to the present invention contains a film-forming resin, a film can be reliably obtained.

  Examples of the film-forming resin include (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene- Butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer Examples thereof include coalescence, polyvinyl acetate, and nylon. Among them, (meth) acrylic resin and phenoxy resin are preferable. By applying a (meth) acrylic resin or a phenoxy resin, it is possible to achieve both film formability and adhesion to a support and an adherend. The film forming resin may be a single type or a combination of two or more types.

  In the film-forming resin, the (meth) acrylic resin is a polymer of (meth) acrylic acid and derivatives thereof, or a copolymer of (meth) acrylic acid and derivatives thereof with other monomers. means. Here, when it describes with (meth) acrylic acid etc., it means acrylic acid or methacrylic acid.

  Specific examples of the acrylic resin used as the film-forming resin include polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and polyacrylic acid-2-ethylhexyl. Polyacrylic acid ester; polymethacrylic acid ester such as polymethyl methacrylate, polyethyl methacrylate, polybutyl methacrylate; polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, Acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer , Methyl methacrylate-acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-acrylic acid Ethyl-acrylonitrile-2-hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate -An acrylonitrile copolymer, an ethyl acrylate- acrylonitrile-N, N dimethylacrylamide copolymer, etc. are mentioned. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N dimethylacrylamide copolymer are preferable.

  In addition, as an acrylic resin used as a film-forming resin, by using a (meth) acrylic resin obtained by copolymerizing a monomer having a functional group such as a nitrile group, an epoxy group, a hydroxyl group, or a carboxyl group, The adhesion of the film-like resin layer to the support and adherend, and the compatibility with the thermosetting resin and the like can be improved. In such a (meth) acrylic resin, the amount of the monomer having the functional group is not particularly limited, but is about 0.1 to 50 mol% with respect to the total weight of the (meth) acrylic resin. Is more preferable, about 0.5 to 45 mol% is more preferable, and about 1 to 40 mol% is more preferable. By setting within such a range, the adhesiveness of the film-like resin layer is preferably prevented from becoming too strong while improving the workability, while improving the adhesion between the support and the adherend. Can be planned.

  The weight average molecular weight of the acrylic resin is, for example, 1,000 or more and 1,000,000 or less, and preferably 3000 or more and 900,000 or less. When the weight average molecular weight of the acrylic resin is in the above range, the film-forming property of the resin composition can be further improved and the fluidity at the time of curing can be ensured.

  Further, when a phenoxy resin is used as the film-forming resin, a phenoxy resin having a number average molecular weight of 5000 to 15000 is preferable. By using such a phenoxy resin having a number average molecular weight, the fluidity of the film-like resin layer can be suppressed, and the thickness of the film-like resin layer can be made uniform.

  The skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, and biphenyl skeleton type. Among these, a phenoxy resin having a saturated water absorption of 1% or less is preferable. Thereby, generation | occurrence | production of foaming, peeling, etc. resulting from a film-form resin layer can be suppressed.

  The saturated water absorption rate is obtained by processing a phenoxy resin into a film having a thickness of 25 μm, drying it in a 100 ° C. atmosphere for 1 hour (an absolutely dry state), and further placing the film in a constant temperature and humidity chamber at 40 ° C. and 90% RH. The weight change is measured every 24 hours, and the weight at the time when the weight change is saturated can be calculated by the following formula (2).

  Saturated water absorption (%) = {(weight at the time of saturation−weight at the time of absolute drying) / weight at the time of absolute drying} × 100 (2)

  When a polyimide resin is used as the film-forming resin, examples of the polyimide resin include those having an imide bond in the repeating unit. Examples of such a polyimide resin include those obtained by reacting diamine and acid dianhydride and heating and dehydrating and ring-closing the resulting polyamic acid. Examples of the diamine include aromatic diamines such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, and siloxane diamine. 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane and the like. These may be used alone or in combination of two or more. Examples of the acid dianhydride include 3,3,4,4′-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4′-oxydiphthalic dianhydride, and the like.

  Such a polyimide resin may be soluble or insoluble in the solvent described later, but is preferably soluble in the solvent. Since the polyimide resin is soluble in the solvent, the phase solubility with the constituent material contained in the solution material is improved, so that the handling is excellent. In particular, the siloxane-modified polyimide resin is preferably used because it can be dissolved in various solvents.

  The film-forming resin may be a commercial product.

  Further, when the resin composition according to the present invention is used after being formed into a film, the resin composition according to the present invention can be added with various plasticizers, stabilizers, antistatic agents, pigments, etc., as long as the effects are not impaired. An agent can be contained.

  When the resin composition according to the present invention is formed into a film and used, the blending amount of the film-forming resin in the resin composition according to the present invention is preferably 5 to 45% by weight of the constituent material of the resin composition. When the blending amount of the film-forming resin in the resin composition according to the present invention is in the above range, the elastic modulus in the film-like resin layer after curing is suppressed while suppressing the film-formation deterioration of the film-like resin layer. Can be suppressed. As a result, the adhesion between the film-like resin layer, the support and the adherend can be further improved. Furthermore, an increase in the melt viscosity of the film-like resin layer can be suppressed.

  When the resin composition according to the present invention is formed into a film and used, the resin composition according to the present invention contains a thermosetting resin, and such a thermosetting resin is not particularly limited. Although it is not, it is preferable to contain an epoxy resin. The epoxy resin refers to any of a monomer, an oligomer and a polymer having an epoxy group. Specific examples of epoxy resins include, for example, novolak epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins; bisphenol epoxy resins such as bisphenol A epoxy resins and bisphenol F epoxy resins; hydroquinone epoxy resins Biphenyl type epoxy resin; stilbene type epoxy resin; triphenolmethane type epoxy resin; triazine nucleus-containing epoxy resin; dicyclopentadiene modified phenol type epoxy resin; naphthol type epoxy resin and phenol aralkyl type having phenylene and / or biphenylene skeleton Epoxy resins, aralkyl type epoxy resins such as naphthol aralkyl type epoxy resins having a phenylene and / or biphenylene skeleton, and others Or higher functional epoxy resins.

  When the resin composition according to the present invention is molded into a film and used, and the resin composition according to the present invention contains an epoxy resin, the content of the epoxy resin contained in the resin composition according to the present invention is Although not particularly limited, it is preferably 10 to 90% by weight, particularly preferably 20 to 80% by weight. When the content of the epoxy resin contained in the resin composition is in the above range, both a low linear expansion coefficient and toughness after curing of the film-like resin layer can be achieved.

  When the resin composition according to the present invention is formed into a film and used, and the resin composition according to the present invention contains an epoxy resin, the softening point of the epoxy resin contained in the resin composition according to the present invention is Although it will not specifically limit if it has compatibility with film forming resin, 40-100 degreeC is preferable and 50-90 degreeC is especially preferable. By setting it as the said lower limit or more, since the tackiness of a film-form resin layer can be reduced, the workability | operativity of a film-form resin layer can be improved. Moreover, the raise of the melt viscosity of a film-form resin layer can be suppressed by setting it as the said upper limit or less.

  When the resin composition according to the present invention is formed into a film and used, and the resin composition according to the present invention contains an epoxy resin, the resin composition according to the present invention is not particularly limited. It is preferable to contain a curing agent. Such a hardening | curing agent should just act as a hardening | curing agent of an epoxy resin, and is selected suitably. Specifically, polyamines including aliphatic polyamines such as diethylenetriamine, triethylenetetramine, and metaxylylenediamine, aromatic polyamines such as diaminodiphenylmethane, m-phenylenediamine, and diaminodiphenylsulfone, dicyandiamide, and organic acid dihydrazide Amine-based curing agents such as compounds, aliphatic acid anhydrides such as hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, aromatic acid anhydrides such as tritometic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid, etc. Acid anhydride curing agent, phenol novolac resin, cresol novolac resin, phenol aralkyl (including phenylene and biphenylene skeleton) resin, naphthol aralkyl (including phenylene and biphenylene skeleton) resin Triphenol methane resin, dicyclopentadiene type phenol resin, bis (mono or di t-butylphenol) propane, methylene bis (2-propenyl) phenol, propylene bis (2-propenyl) phenol, bis [(2-propenyloxy) phenyl] Methane, bis [(2-propenyloxy) phenyl] propane, 4,4 ′-(1-methylethylidene) bis [2- (2-propenyl) phenol], 4,4 ′-(1-methylethylidene) bis [ 2- (1-phenylethyl) phenol], 4,4 ′-(1-methylethylidene) bis [2-methyl-6-hydroxymethylphenol], 4,4 ′-(1-methylethylidene) bis [2- Methyl-6- (2-propenyl) phenol], 4,4 ′-(1-methyltetradecylidene) bis Examples thereof include phenolic curing agents such as phenol.

  When the resin composition according to the present invention is molded into a film and used, and the resin composition according to the present invention contains an epoxy resin, the content of the curing agent in the resin composition according to the present invention is epoxy It is obtained by calculating the equivalent ratio of the epoxy equivalent of the resin and the curing agent. When the curing agent is a phenol resin, the equivalent ratio of the epoxy equivalent of the epoxy resin to the functional group of the curing agent is preferably 0.5 to 1.5, particularly preferably 0.7 to 1.3. By setting it as the said range, the heat resistance of a film and storability can be made compatible.

  When the resin composition according to the present invention is formed into a film and used, and the resin composition according to the present invention contains an epoxy resin, the resin composition according to the present invention may contain a curing accelerator. Good. Such a curing accelerator may be selected as long as it accelerates the curing reaction between the epoxy resin and the curing agent. Specific examples include imidazoles, amine-based catalysts such as 1,8-diazabicyclo (5,4,0) undecene, and phosphorus compounds such as salts of triphenylphosphine and tetra-substituted phosphonium with polyfunctional phenol compounds. Among these, imidazoles and phosphorus compounds that achieve both fast curability of the film-like resin layer, storage stability, and corrosivity of the aluminum pad on the semiconductor element are preferable.

  When the resin composition according to the present invention is formed into a film and used, and the resin composition according to the present invention contains an epoxy resin, the content of the curing accelerator in the resin composition of the present invention is 0. 0.001 to 10% by weight is preferable, and 0.01 to 5% by weight is particularly preferable. By setting it as the said range, it becomes possible to maintain the balance of the quick-hardening property of a film-form resin layer, preservability, and the physical property after hardening.

  As the imidazole as a curing accelerator, an imidazole compound having a melting point of 150 ° C. or higher is preferable, and examples thereof include 2-phenylhydroxyimidazole, 2-phenyl-4-methylhydroxyimidazole, 2-phenyl-4-methylimidazole and the like. .

  Among the phosphorus compounds as curing accelerators, tetra-substituted phosphonium and polyfunctional phenols that excel in the fast curing properties of the film-like resin layer, the corrosiveness to aluminum pads of semiconductor elements, and the storage stability of the film-like resin layer Particularly preferred are salts with compounds.

  A salt of a tetra-substituted phosphonium and a polyfunctional phenol compound is not a simple mixture but a compound having a structure such as a salt structure or a supramolecular structure. The tetra-substituted phosphonium salt of the tetra-substituted phosphonium and the polyfunctional phenol compound is preferably a compound in which four alkyl groups or aromatic compounds are coordinated to the phosphorus atom from the balance between curability and storage stability of the film.

  The substituents of the tetra-substituted phosphonium are not particularly limited, and may be the same or different from each other, and a tetra-substituted phosphonium ion having a substituted or unsubstituted aryl group or alkyl group as a substituent is heated. It is stable and preferred for hydrolysis. Specific tetra-substituted phosphoniums include tetraphenylphosphonium, tetratolylphosphonium, tetraethylphenylphosphonium, tetramethoxyphenylphosphonium, tetranaphthylphosphonium, tetrabenzylphosphonium, ethyltriphenylphosphonium, n-butyltriphenylphosphonium, 2-hydroxyethyl. Examples thereof include triphenylphosphonium, trimethylphenylphosphonium, methyldiethylphenylphosphonium, methyldiallylphenylphosphonium, tetra-n-butylphosphonium and the like. Among these, tetraphenylphosphonium is preferable from the balance between the fast curability of the film and the storage stability.

  The polyfunctional phenol compound of the molecular compound of the tetra-substituted phosphonium and the polyfunctional phenol compound is a compound having a phenolic hydroxyl group, and at least one of the hydroxyl groups is removed to form a phenoxide type compound. Specific examples include a hydroxybenzene compound, a biphenol compound, a bisphenol compound, a hydroxynaphthalene compound, a phenol novolac resin, and a phenol aralkyl resin.

  Examples of the polyfunctional phenol compound include bis (4-hydroxy-3,5-dimethylphenyl) methane (commonly called tetramethylbisphenol F), 4,4′-sulfonyldiphenol, and 4,4′-isopropylidenediphenol. (Commonly known as bisphenol A), bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane and bis (4-hydroxyphenyl) methane among them, Bisphenols such as bis (2-hydroxyphenyl) methane and three mixtures of (2-hydroxyphenyl) (4-hydroxyphenyl) methane (for example, bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.), 1,2 -Benzenediol, 1,3-benzenediol, 1,4 Dihydroxybenzenes such as benzenediol, trihydroxybenzenes such as 1,2,4-benzenetriol, various isomers of dihydroxynaphthalene such as 1,6-dihydroxynaphthalene, 2,2′-biphenol, 4,4 ′ -Compounds such as various isomers of biphenols such as biphenol are mentioned, and 1,2-dihydroxynaphthalene and 4,4'-sulfonyldiphenol, which are excellent in the balance between fast curability and storage stability, are preferred.

  When the resin composition according to the present invention is formed into a film and used, such a film-shaped resin layer includes, for example, a compound having a flux action and a thermosetting resin, and, if necessary, a film-forming resin. And other components are dissolved in a solvent to prepare a film-like resin layer forming material (liquid material), and then the film-like resin layer forming material is subjected to a release treatment such as a polyester sheet. It is obtained by coating on the base material, removing the solvent at a predetermined temperature, and drying.

  Examples of the solvent used for the preparation of the film-shaped resin layer forming material include ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, DAA (diacetone alcohol), benzene, Aromatic hydrocarbons such as xylene and toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, BCSA (butyrocell solve) Cellosolve such as acetate), NMP (N-methyl-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), E P (3- ethyl ethoxypropionate), DMC (dimethyl carbonate) and the like.

  Moreover, the thickness (average) of the film-like resin layer is not particularly limited, but is preferably about 3 to 100 μm, and more preferably about 5 to 50 μm.

[Method for Manufacturing Electronic Device]
A method for manufacturing electronic device 100 of the present embodiment will be described in order below.

  First, as shown in FIG. 1, solder bumps 111 are formed on one surface of the first substrate 110, and solder bumps 121 are formed on one surface of the second substrate 120.

  The solder used for bonding to the solder bumps 111 and 121 is not particularly limited, and examples include alloys containing at least two or more selected from the group consisting of tin, silver, lead, zinc, bismuth, indium, and copper. It is done. The melting points of the solder bumps 111 and 121 are 100 to 350 ° C.

  Next, a resin layer 130 is introduced between the solder bumps 111 of the first substrate 110 and the solder bumps 121 of the second substrate 120, and as shown in FIG. The resin layer 130 is filled between the first substrate 110 and the second substrate 120 while being melt bonded to the solder bumps 121 of the second substrate 120.

  That is, in this embodiment, the solder bumps 111 of the first substrate 110 and the solder bumps 121 of the second substrate 120 are laminated so as to sandwich the resin layer 130, and the solder bumps 121 and the solder bumps 111 are melt bonded. The resin layer 130 can be filled between the first substrate 110 and the second substrate 120 while the resin layer 130 is melted and spread and soldered.

  The solder bonding may be performed at a temperature equal to or higher than the melting point of the solder bumps 111 and 121, for example, 150 to 380 ° C.

  Next, the resin layer 130 is cured. When the resin layer 130 contains a thermosetting resin, it can be thermoset (FIG. 3).

  The heating temperature may be any temperature as long as it is equal to or higher than the curing temperature of the resin layer 130 and is appropriately selected, but is usually 100 to 250 ° C, preferably 150 to 200 ° C. The heating time is appropriately selected depending on the kind of the resin layer 130, but is usually 0.5 to 3 hours, preferably 1 to 2 hours.

  Further, when the resin layer 130 is cured, it may be pressurized. The pressure is preferably from 0.1 MPa to 10 MPa, more preferably from 0.5 MPa to 5 MPa. Thereby, it becomes difficult to generate voids in the cured product of the resin composition. The pressurization is preferably performed using a fluid, and examples thereof include gases such as nitrogen gas, argon gas, and air. Air is particularly preferred because of its low cost.

  As a method of curing the resin layer 130 while being pressurized with a pressurized fluid, for example, a processing object to be heated is placed in a pressure vessel, and then the pressurized fluid is introduced into the pressure vessel and pressurized. The method of heating the object to be processed, more specifically, the object to be processed in the pressure oven while installing the object to be processed in the pressure oven and introducing the gas for pressurization into the pressure oven. The method of heating a thing is mentioned.

  Here, it is preferable that the reaction rate (A) of the resin composition immediately after the melt bonding with respect to the reaction rate (B) of the cured resin composition is 0.01 ≦ A / B ≦ 0.7.

In this embodiment, the reaction rate is determined by the following procedure.
(I) About the resin layer (uncured resin layer) which has not been heat-treated, using a differential scanning calorimeter (DSC), the measurement temperature range is 25 to 300 ° C., the temperature rising rate is 10 ° C./min. And the calorific value at that time (referred to as “the amount of heat obtained when all of the reactions are performed”) is measured.
(Ii) For the resin layer heated under the same conditions (heating temperature, heating time, etc.) as melt bonding, the calorific value at that time was measured under the same conditions as in (i), and “amount of heat obtained when all reacted” The ratio to is the reaction rate (A).
Similarly, for the cured resin layer, the calorific value is measured under the same conditions as in (i), and the ratio to the “caloric value obtained when all react” is defined as the reaction rate (B).

  Since the reaction rate (A) with respect to the reaction rate (B) determined as described above is 0.01 or more and 0.7 or less, the resin composition immediately after the melt connection is in a state before solidification, Voids can be removed by reheating and pressurizing.

  In the configuration as described above, according to the method for manufacturing electronic device 100 of the present embodiment, a resin layer using a specific resin composition in which the gel time at a temperature 10 ° C. higher than the melting point of the solder is 100 seconds or more. By 130, the hardening rate of a resin composition falls and it becomes difficult to generate a void. Further, from the viewpoint of obtaining the fluidity of the resin composition even after solder bonding, void formation in the finally obtained electronic device 100 is suppressed, and connection reliability can be improved.

  The present invention is not limited to the present embodiment, and various modifications are allowed without departing from the scope of the present invention. For example, in the said form, it illustrated that both the solder bumps 111 and 121 were formed in the spherical shape. However, one or both of them may be formed in multiple stages (not shown).

  In addition, embodiment mentioned above and a some modification can be combined in the range in which the content does not conflict. Further, in the above-described embodiments and modifications, the structure of each part has been specifically described, but the structure and the like can be changed in various ways within a range that satisfies the present invention.

Next, examples of the present invention will be described.
The following evaluation was performed about the obtained resin composition or its hardened | cured material. The evaluation results are shown in the table.

[Gel time (seconds)]
The resin composition was placed on a hot plate at 180 ° C. and 250 ° C., and the time (seconds) until the resin composition gelled was measured. The melting point of the solder bump used in this example and the comparative example was 217 ° C.

[Melt viscosity at 120 ° C. (Pa · s)]
The temperature of the resin composition was raised at a rate of 15 ° C./min, the viscosity behavior with respect to temperature was measured using a Haake rheometer, and the viscosity value at 120 ° C. was read.
Condition: 20 mmΦ, 6.3 rad / s

[Ratio of reaction rate immediately after solder bonding process and reaction rate after curing]
The uncured product of the resin composition was measured by DSC (10 ° C./min) to obtain a calorific value. This calorific value was defined as “amount of heat obtained when all the reactions were performed”.
Each of the resin composition after the heat treatment in the soldering step and the cured resin composition was similarly measured by DSC to obtain a calorific value. The reaction rate (%) for each was calculated from the obtained calorific value, and the ratio was determined.

[Void properties after mounting]
A sample resin composition that was brought into contact with the substrate at 150 ° C., heated to a set temperature of 350 ° C. and held for 5 seconds was observed by ultrasonic flaw detection (SAT), and the presence or absence of voids was determined as follows. .
Judgment
○: No void △: Voids straddling bumps ×: Many voids occur

[Void properties after pressure curing]
The resin composition after curing at 150 ° C./2 h at 5 atm was observed by SAT, and the presence or absence of voids was determined as follows.
Judgment
○: No void △: Voids straddling bumps ×: Many voids occur

Example 1
-Preparation of resin composition Bisphenol F type epoxy resin (DIC Corporation, EXA-830LVP, epoxy equivalent 160) 19.2% by weight and biphenyl type epoxy resin (Nippon Kayaku Co., Ltd., NC-3000, epoxy equivalent) 272) 57.6% by weight, gentisic acid (manufactured by Tokyo Chemical Industry Co., Ltd., 2,5-dihydroxybenzoic acid, melting point 202 ° C.) 23.1% by weight, and 2-phenyl-4-methylimidazole (Shikoku Chemical Industries) (2P4MZ, manufactured by Co., Ltd.) was weighed and dispersed and kneaded with three rolls, and then defoamed under vacuum to obtain a paste-like resin composition.
-Fabrication of semiconductor device The obtained paste-like resin composition was used to form a semiconductor element (size 15) having a solder bump on a circuit board on which a circuit pattern was formed (ELC-4785GS, manufactured by Sumitomo Bakelite Co., Ltd. as a core material). × 15 × 0.65 mm) was heated with a flip chip bonder at 280 ° C. for 10 seconds, but was filled in a gap (0.05 mm) formed between the semiconductor chip and the substrate. Thereafter, the resin composition was cured by heating at 150 ° C. for 120 minutes to obtain a semiconductor device.

(Examples 2 and 3)
Resin compositions having the compositions shown in Table 1 were prepared in the same manner as in Example 1. By using the obtained resin composition, semiconductor devices were obtained in the same manner as in Example 1.

Example 4
Production of film-like resin layer EPICLON 840-S (Dainippon Ink Co., Ltd.), 45% by weight, YX6954 (Japan Epoxy Resin Co., Ltd.) 24.9% by weight, phenol phthalin (Tokyo Chemical Industry Co., Ltd.) 15% by weight, PR-55617 (manufactured by Sumitomo Bakelite Co., Ltd.) 15% by weight, 2P4MZ (manufactured by Shikoku Kasei Kogyo Co., Ltd.) 0.1% by weight are mixed in advance and applied onto a substrate to obtain a film-like resin layer It was.
-Fabrication of semiconductor device The obtained film-like resin layer was applied to a semiconductor component (size 10 x 10 x 0.2 mm) having solder bumps having a height of 60 µm and a pitch of 150 µm. MVLP), laminating at 100 ° C., 0.8 MPa for 30 seconds, and a circuit board (as a core material) on which a circuit pattern is formed using a chip with a resin layer using a flip chip bonder (manufactured by Panasonic, FCB3) Solder connection was made by heating at 280 ° C. for 10 seconds to ELC-4785GS manufactured by Sumitomo Bakelite Co., Ltd. And it heated at 180 degreeC for 60 minute (s), the film-form resin layer was thermosetted, and the semiconductor device was obtained.

(Examples 5-7) and (Comparative Examples 1-5)
Resin compositions having the compositions shown in Table 1 were prepared in the same manner as in Example 1. By using the obtained resin composition, semiconductor devices were obtained in the same manner as in Example 1.

  The resin compositions or film-like resin layers obtained in Examples and Comparative Examples, and semiconductor devices were evaluated. The results are shown in the table.

In addition, the description in Table 1 shows the following, respectively.
-EXA-830LVP DIC Corporation, epoxy equivalent 160
NC-3000 Nippon Kayaku Co., Ltd., epoxy equivalent 272
-EPICLON 840S Dainippon Ink Co., Ltd., epoxy equivalent 185
-RE-810NM Nippon Kayaku Co., Ltd., epoxy equivalent 210
・ PR55617 Sumitomo Bakelite Co., Ltd., hydroxyl equivalent 104
NH2200R Hitachi Chemical Co., Ltd., molecular weight 166
・ 2P4MZ Shikoku Kasei Kogyo Co., Ltd., melting point: 174-184 ° C
-2MZ Shikoku Kasei Kogyo Co., Ltd., melting point 140-148 ° C
・ C05-MB Sumitomo Bakelite Co., Ltd., melting point 272 ° C
-Gentizic acid Tokyo Chemical Industry Co., Ltd., 2,5-dihydroxybenzoic acid, melting point 202 ° C
・ Phenolphthalene, manufactured by Tokyo Chemical Industry Co., Ltd., melting point: 235 ℃
-Sebacic acid manufactured by Tokyo Chemical Industry Co., Ltd., melting point 134 ° C
・ SO25H Admatechs Co., Ltd. ・ YX6954 Japan Epoxy Resin Co., Ltd.

100 Electronic Device 110 First Substrate 111 Solder Bump 120 Second Substrate 121 Solder Bump 130 Resin Layer

Claims (13)

A resin composition that is introduced between the electrode terminal of the substrate and the electrode terminal of the semiconductor chip when the electrode terminal of the substrate and the electrode terminal of the semiconductor chip are solder-bonded, and is thermoset after soldering. ,
The resin composition includes a thermosetting resin, and has a gel time at 180 ° C. and 250 ° C. of 100 seconds or more. The resin composition according to claim 1,
The resin composition having a melt viscosity at 120 ° C. of 0.01 Pa · s or more and 10,000 Pa · s or less of the resin composition. In the resin composition according to claim 1 or 2,
A resin composition, wherein a reaction start temperature of the resin composition is 100 ° C. or higher and 160 ° C. or lower. In the resin composition as described in any one of Claims 1 thru | or 3,
The thermosetting resin is an epoxy resin. In the resin composition as described in any one of Claims 1 thru | or 3,
The resin composition includes a flux activator. In the resin composition according to claim 5,
The flux activator is a compound having a carboxyl group. A method of manufacturing an electronic device in which an electrode terminal of a substrate and an electrode terminal of a semiconductor chip are joined by soldering,
While introducing the resin composition between the electrode terminal of the substrate and the electrode terminal of the semiconductor chip, while melting and bonding the electrode terminal of the substrate and the electrode terminal of the semiconductor chip, Filling a resin composition between the substrate and the semiconductor chip;
Thermosetting the resin composition;
Including
The said resin composition is the resin composition as described in any one of Claims 1 thru | or 6. The manufacturing method of the electronic device characterized by the above-mentioned. In the manufacturing method of the electronic device according to claim 7,
The method for manufacturing an electronic device is characterized in that the step of curing the resin composition includes curing the resin composition while applying pressure using a pressurized fluid. In the manufacturing method of the electronic device according to claim 7 or 8,
The method of manufacturing an electronic device, wherein the pressurized fluid is gas and / or air. In the manufacturing method of the electronic device according to any one of claims 7 to 9,
The reaction rate (A) of the resin composition immediately after the fusion bonding with respect to the reaction rate (B) of the cured resin composition is 0.01 ≦ A / B ≦ 0.7. Device manufacturing method. In the manufacturing method of the electronic device according to any one of claims 7 to 10,
The method of manufacturing an electronic device, wherein the pressurization by the pressurized fluid is 0.1 MPa or more and 10 MPa or less. In the manufacturing method of the electronic device according to any one of claims 7 to 11,
The method for manufacturing an electronic device is characterized in that the step of curing the resin composition is performed in a pressure vessel, and the pressure vessel is pressurized with the pressurized fluid. In the manufacturing method of the electronic device according to any one of claims 7 to 12,
Curing of the resin composition is performed at 100 ° C. or higher and 250 ° C. or lower.

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