JP2012019025A - Liquid processing unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent mist from being reattached and improve uniformity in film thickness by controlling air current in a processing cup.SOLUTION: A processing cup (33A) comprises: a first cup member (40A); a second cup member (60); and a third cup member (70) provided between the first cup member (40A) and the second cup member (60). The first cup member (40A) has an annular inner side tilted face (43), nearly horizontal annular top face (43b), and an annular outer side tilted face (41). The third cup member (70) has an inner side end edge (70e) provided at a position higher and outer than a periphery (We) of a substrate held by a spin chuck (31). The top face (43b) is provided so as to include the periphery (We) of the substrate and the inner side end edge (70e) of the third cup member in a planer view.

Description

  The present invention relates to a liquid processing apparatus that supplies a processing liquid to a substrate such as a semiconductor wafer while rotating the substrate to perform a predetermined liquid processing. In a preferred and non-limiting embodiment of the present invention, the liquid processing apparatus is a coating apparatus for applying a coating solution such as a resist solution to a substrate in order to form a coating film such as a resist film on the substrate. is there.

  In a photolithography process used in the manufacture of semiconductor devices, a resist coating process for applying a resist solution on a semiconductor wafer (hereinafter referred to as “wafer”) to form a resist film, and exposing the resist film to a predetermined pattern An exposure process and a development process for developing the exposed resist film are performed, and a predetermined resist pattern is formed on the wafer.

  In the resist coating process, a resist solution is supplied from the nozzle to the center of the rotating wafer surface, and the resist solution is diffused radially outward by centrifugal force to cover the entire surface of the wafer with the resist solution. Many coating methods are used.

The spin coating method includes a spin chuck that holds and rotates a wafer, a resist nozzle that supplies a resist solution to the surface of the wafer held by the spin chuck, and a processing cup that surrounds the periphery of the wafer held by the spin chuck. It is executed by a coating unit (coating apparatus) provided, so-called spin coater. Further, the coating unit performs cleaning liquid (solvent) in order to execute processing for removing unnecessary resist adhering to the peripheral portions of the front and rear surfaces of the wafer, called EBR (edge bead removal) processing and BR (back rinse) processing. And a cleaning nozzle that discharges water. The EBR process and the BR process can be performed simultaneously using a common cleaning nozzle called a bevel cleaning nozzle.
During the operation of the coating unit, the atmosphere in the processing cup is sucked through the exhaust pipe connected to the bottom of the processing cup. By this suction, an air flow is formed in the processing cup, and a liquid such as a resist solution or a solvent (particularly a mist-like liquid) scattered from the wafer by centrifugal force is led to the bottom of the processing cup by the air flow and discharged from the cup. . That is, the airflow prevents mist once scattered from the wafer from reattaching to the wafer.

  Generally, in a coating unit, prewetting, resist solution discharge, resist solution diffusion, resist solution flattening, resist solution drying (resist discharge is stopped at this time), EBR / BR (at this time, solvent is discharged) And a series of steps of final drying are performed sequentially. In each step, exhaust in the cup is always performed. A relatively large amount of mist scatters from the wafer during pre-wet thinner discharge and resist solution discharge and diffusion, so a large exhaust flow rate is used to reliably prevent such mist from reattaching to the wafer. Is required. On the other hand, in the subsequent resist solution drying step, since the amount of mist scattered is small, the required exhaust flow rate is relatively small. Further, in each step of EBR / BR and final drying (especially EBR / BR), an intermediate exhaust flow rate is required.

  The above-described coating unit is incorporated in a system configured so that various processes related to the photolithography process can be performed consistently. This system includes an exposure apparatus that performs exposure and a coating and developing apparatus that performs various processes (resist coating, development, baking, etc.) other than the exposure process of the photolithography process. Mainly from the viewpoint of improving throughput, a plurality of processing units (resist coating unit, developing unit, bake unit, etc.) of the same type are incorporated in the coating and developing apparatus. An exhaust system is connected to the plurality of coating units in order to exhaust the coating unit described above. This exhaust system includes a common exhaust system shared by a plurality of coating units. The exhaust system may include an exhaust module provided individually for each coating unit.

  In order to reduce the burden on the exhaust system, the plurality of coating units are operated at different timings so that the execution periods of steps requiring a large exhaust flow rate do not overlap. Since the time required to execute each step of prewetting, resist solution discharge and resist solution diffusion is relatively short, each application can be performed even if the number of application units incorporated in one application / development device increases. It is relatively easy to avoid duplication of execution time of these steps in the unit. However, the time required to perform each of the EBR / BR and final drying steps that require a medium exhaust flow rate is relatively long. For this reason, when the number of coating units incorporated in one coating / developing apparatus increases, it becomes difficult to avoid duplication in the execution period of these steps in each coating unit. Therefore, from the above viewpoint, there is a demand for a processing cup in which an airflow is formed that can effectively prevent mist from reattaching to the wafer even when the exhaust flow rate is relatively small.

  In addition, the air flow generated in the processing cup by the exhaust causes a beneficial effect of preventing re-deposition of mist to the wafer, but on the other hand, it may cause another problem of non-uniform film thickness within the wafer surface. That is, the airflow passing through the peripheral edge of the wafer promotes the drying of the resist solution, and pushes the resist into the peripheral edge of the wafer, and thus acts to increase the thickness of the resist film at the peripheral edge of the wafer. Recent inventor studies have shown that the tendency increases as the angle of incidence of the airflow on the wafer peripheral surface increases. Such non-uniform film thickness cannot be ignored in recent years when the resist film is being made extremely thin. Therefore, from the above viewpoint, there is a demand for a processing cup capable of forming an air flow that does not cause an increase in film thickness at the peripheral edge of the wafer.

  Various techniques have been proposed for improving the airflow in the cup, and an example thereof is described in Japanese Patent Application Publication No. 2004-207573 (Patent Document 1) related to a patent application by the same applicant as the present case. Yes. This discloses an air flow control technique in the vicinity of the wafer peripheral portion, and according to this, the tendency of the film thickness on the wafer peripheral portion surface to be thicker than other portions can be reduced. However, in recent years, there has been a demand for higher film thickness uniformity as the resist film becomes extremely thin. In this regard, there is room for further improvement in the technique of Patent Document 1. Further, the technique of Patent Document 1 has room for improvement with respect to the function of preventing mist reattachment.

  The present applicant has also filed an unpublished patent application (Japanese Patent Application No. 2009-051174) related to the technology for controlling the airflow in the cup at the time of filing of the present application. The technique described in this unpublished application greatly improves the mist reattachment prevention function. However, there is room for further improvement from the viewpoint of film thickness uniformity.

JP 2004-207573 A

  The present invention prevents the generation of an air current that adversely affects the liquid treatment result, for example, an air current that impairs the film thickness uniformity of the coating film, or an air current that promotes the re-attachment of the mist of the treatment liquid to the substrate. A treatment cup that can be suppressed is provided.

  The present invention relates to a spin chuck configured to hold a substrate horizontally and rotate around a vertical axis in a liquid processing apparatus, and a processing cup provided so as to surround the substrate held by the spin chuck. The first processing liquid is supplied to the processing cup to which an exhaust path for exhausting the atmosphere in the processing cup is connected and the substrate held by the spin chuck. A first cup member provided to be positioned at a position lower than the substrate when the substrate is held on the spin chuck, and the processing cup (33). A second cup member provided outside and above the first cup member, and a third cup member provided between the first cup member and the second cup member. And dividing the space between the first cup member and the second cup member into a first annular flow path between the first and third cup members and the second and third. A third cup member defining a second annular flow path between the cup members, wherein the first and second annular flow paths communicate with the exhaust path, and The cup member has an inner edge provided so as to be positioned at an outer position higher than a peripheral edge of the substrate held by the spin chuck, and the first cup member moves outward. An annular inner inclined surface that increases in height, a generally horizontal annular top surface that is connected to the outer peripheral edge of the inner inclined surface, and a height that is connected to the outer peripheral edge of the top surface and increases toward the outside. An annular outer inclined surface that is lowered, and the annular shape of the first cup member Top surface in plan view, the provided manner to cover the inner edge of the third of the cup member and the periphery of the substrate held by the spin chuck, provides a liquid treatment apparatus.

  According to the present invention, by guiding or rectifying the back flow (the outward flow generated in the space on the back side of the substrate with the rotation of the substrate) by the substantially horizontal annular top surface provided in the first cup member, For example, it is possible to prevent or suppress the generation of an air current that impairs the film thickness uniformity of the coating film or an air current that promotes the re-attachment of the mist of the processing liquid to the substrate.

The schematic sectional drawing which shows the structure of the resist coating device provided with the 1st structural example of the process cup. The partially broken perspective view which shows the principal part of the 1st structural example of a process cup. The top view of the 1st structural example of a process cup. It is a figure which shows a bevel washing nozzle, Comprising: (a) is the side view, (b) is a perspective view which shows the bevel washing nozzle fitted by the inner side cup member. The perspective view which shows arrangement | positioning of the bevel washing nozzle to an inner side cup member. FIG. 5 is a schematic cross-sectional view showing the airflow and mist movement generated in the cup of the first configuration example when the resist solution is discharged. The schematic sectional drawing which shows the motion of the airflow and mist which arise in the cup of a 1st structural example at the time of bevel washing | cleaning. The longitudinal cross-sectional view which shows the principal part of the 2nd structural example (embodiment of invention) of a processing cup. The longitudinal cross-sectional view for demonstrating the dimension of each part in the principal part of the 2nd structural example (embodiment of invention) of a processing cup. The longitudinal cross-sectional view for demonstrating the airflow which arises in the conventional structural example of a processing cup. The longitudinal cross-sectional view for demonstrating the airflow which arises in the 1st structural example of a processing cup. The longitudinal cross-sectional view for demonstrating the airflow which arises in the 2nd structural example of a processing cup. The graph which shows the relationship between the exhaust pressure in a conventional structural example and a 2nd structural example, and a wafer peripheral part film thickness. The graph which shows the relationship between the exhaust pressure in the conventional structural example and the 2nd structural example, and mist amount. The graph explaining an example of the process conditions in the resist coating apparatus provided with the cup which concerns on a 1st structural example and a 2nd structural example. 1 is a schematic plan view showing an example of a configuration of a coating and developing apparatus provided with a resist coating apparatus. FIG. 17 is a schematic perspective view of the coating and developing apparatus shown in FIG. 16. FIG. 17 is a schematic longitudinal sectional view of the coating and developing apparatus shown in FIG. 16.

  Preferred embodiments of the invention will be described below with reference to the accompanying drawings. Note that the processing cup included in the liquid processing apparatus according to the embodiment is a processing cup described in another patent application (Japanese Patent Application No. 2009-051174) unpublished at the time of filing of the present application by the applicant. This is an improvement based on “first configuration example”. In the following, after describing the first configuration example, the processing cup according to the embodiment (hereinafter referred to as “second configuration example”) will be described with a focus on differences from the first configuration example.

[First configuration example]
First, with reference to FIGS. 1-7, the processing cup which concerns on a 1st structural example, and the liquid processing apparatus provided with the same are demonstrated. This liquid processing apparatus is configured as a resist coating apparatus. As shown in FIG. 1, the resist coating apparatus includes a spin chuck 31 that holds a wafer W horizontally by vacuum suction. The spin chuck 31 can be rotated around a vertical axis by a rotation driving unit 32 (rotary motor) provided below the spin chuck 31. Further, the spin chuck can be moved up and down by a lift drive unit (not shown) provided in the rotation drive unit 32. A processing cup 33 is provided so as to surround the spin chuck 31. The processing cup 33 mainly includes an inner cup member 40, an intermediate cup member 50, and an outer cup member 60.

  As shown in FIGS. 1 and 2, the inner cup member 40 has an annular outer inclined surface 41 and an annular outer vertical surface 42. The outer inclined surface 41 extends outward from a position that is close to and opposed to the rear surface side peripheral portion of the wafer W held by the spin chuck 31, and is inclined so that its height decreases as it goes outward. The outer vertical surface 42 continues to the outermost peripheral end of the outer inclined surface 41 and extends downward in the vertical direction. The outer inclined surface 41 and the outer vertical surface 42 serve as a lower guide portion 45 that guides the resist solution that has fallen from the wafer W from flowing down. The inner cup member 40 has an annular inner inclined surface 43 that is inclined so as to increase in height as going outward. The inner end of the inner inclined surface 43 is located directly below the first predetermined distance from the periphery of the wafer W, for example, a position away from the center of the tens of millimeters. The outer end of the inner inclined surface 43 is located immediately below a second predetermined distance from the periphery of the wafer W, for example, a position that is several millimeters away from the center. An inclined convex portion 43 a that protrudes upward from the inner end portion of the outer inclined surface 41 is formed by the outer end of the inner inclined surface 43 and the back surface thereof. Further, the inner cup member 40 has a disk-shaped member having a horizontal circular surface 44 with the inner edge of the inner inclined surface 43 as an outer peripheral edge, and the center of this disk-shaped member is the rotation axis of the spin chuck 31. Has penetrated.

  An upper portion (upper guide portion 70 described later) of the intermediate cup member 50 is located between the inner cup member 40 and the outer cup member 60, and an annular space between the inner cup member 40 and the outer cup member 60. Is divided into two. In this sense, the cup member 50 is referred to as an “intermediate” cup member. An annular liquid receiver 51 is provided at the bottom of the intermediate cup member 50. A waste liquid path 52 is connected to the bottom wall of the liquid receiving portion 51. In addition, two exhaust pipes 53 protrude into the liquid receiving portion 51. The two exhaust pipes 53 merge on the downstream side and are connected via a damper 54 to a predetermined exhaust system, for example, an exhaust duct of a factory. By sucking the atmosphere in the processing cup 33 through the exhaust pipe 53, an air flow is formed in the processing cup 33, and a gas-liquid mixed fluid (for example, a mist of the processing liquid scattered from the wafer W is included on the air flow). Air) can be guided to the liquid receiving portion 51. The gas-liquid mixed fluid that has entered the liquid receiver 51 is deflected by the outer vertical surface 42 of the inner cup member 40 and the surface of the exhaust pipe 53 and then enters the exhaust pipe 53. A part of the liquid (mist) having a large specific gravity is separated during the deflection and is discharged from the waste liquid passage 52.

  The exhaust pressure (exhaust flow rate) can be adjusted by adjusting the opening degree of the damper 54, and thereby the strength of the airflow in the processing cup 33 can be adjusted. Here, the “high exhaust” state where the exhaust pressure is high and the exhaust flow rate is high, and the “low exhaust” state where the exhaust pressure is low and the exhaust flow rate is low are used. An exhaust module (not shown) may be provided in each resist coating apparatus, and the suction force generated by the exhaust module may be used in combination with the suction force of the factory exhaust duct.

  Further, the intermediate cup member 50 includes a vertical lower cylindrical portion 50a and an upper guide portion 70 that extends substantially obliquely from the upper end of the cylindrical portion 50a toward the inner upper side. The boundary between the upper guide portion 70 and the cylindrical portion 50 a is slightly higher than the boundary between the outer inclined surface 41 and the outer vertical surface 42 of the inner cup member 40. The upper guide part 70 has an annular outer surface facing the outer cup member 60 and an annular inner surface facing the inner cup member 40. The outer side surface of the upper guide part 70 is composed of a horizontal plane 76, an inclined plane 75, a vertical plane 74, and an inclined plane 73 that are successively arranged from the top. The inclined surface 75 and the inclined surface 73 are inclined so that the height decreases as going outward. The height of the horizontal plane 76 is slightly higher than that of the surface of the wafer W held on the spin chuck 31. The inner edge of the horizontal plane 76 is separated from the peripheral edge of the wafer W by a predetermined distance, for example, 3 mm. As shown in FIG. 3, a plurality of through holes 77 are formed in the inclined surface 73, and the through holes 77 are arranged at predetermined intervals along the circumferential direction.

  The annular inner side surface of the upper guide part 70 is constituted by a curved fluid turning surface 72 and an inclined surface 71 continuous with the curved fluid turning surface 72 from the top. The inclined surface 71 is inclined so that the height decreases as it goes outward. The fluid turning surface 72 mainly serves as a guide surface for smoothly guiding the mist downstream from the wafer W so that the mist splashed from the wafer W and colliding with the fluid turning surface 72 does not bounce back to the wafer W. Fulfill. The line segment connecting the upper end and the lower end of the fluid turning surface 72 is inclined so that the height decreases as going outward. When viewed in a longitudinal section, the fluid turning surface 72 is such that the outline of the fluid turning surface 72 is positioned above the line segment connecting the upper end and the lower end of the fluid turning surface 72 (convex upward). Is so curved. An annular flow path 79a (79) extending obliquely outward and downward is formed between the upper guide portion 70 of the intermediate cup member 50 and the inclined surface 41 of the inner cup member, and the tubular portion 50a and the vertical wall 40 are In between, an annular channel 79b (79) extending vertically is formed following the annular channel 79a. The annular flow path 79 mainly serves to guide the processing liquid scattered from the wafer W to the liquid receiving portion 51.

  The outer cup member 60 has an annular inner surface that faces the annular outer surface of the upper guide portion 70 of the intermediate cup member 50. The annular inner surface includes a vertical surface 60a extending vertically upward from the upper end of the cylindrical portion 50a of the intermediate cup member 50, and an inclined surface 61 extending obliquely inward and upward from the upper edge of the vertical surface 60a. Consists of An annular space (annular flow path) 78 between the outer cup member 60 and the intermediate cup member 50 serves to collect the atmosphere (for example, solvent vapor) around the wafer surface. An annular vertical wall 100 projects downward from the inclined surface 61 of the outer cup member 60. A distance L between the lower end of the vertical wall 100 and the intermediate cup member 50 is, for example, 5 mm. The vertical wall 100 prevents the fluid (fluid containing mist) flowing through the annular flow path 79 from flowing out toward the wafer W through the through hole 77 and the annular space 78. Incidentally, what is indicated by reference numeral 62 in the figure is an opening of the outer cup member 60, and the wafer W can be transferred to the spin chuck 31 through this opening 62.

  Next, the bevel cleaning nozzle 46 will be described. The bevel cleaning nozzle 46 is provided so that a process equivalent to the EBR / BR process described in the background section can be performed simultaneously. As shown in FIGS. 4B and 5, the bevel cleaning nozzle 46 is fitted into a recess 47 formed in a part of the annular inclined surface 43 of the inner cup member 40. The resist coating apparatus preferably includes a plurality of, for example, two bevel cleaning nozzles 46. The two bevel cleaning nozzles 46 are provided at positions facing each other in the radial direction of the processing cup 33. Each bevel cleaning nozzle 46 can move back and forth between a position on the spin chuck 31 side and a position on the inclined surface 43 side along a rail 48 extending in the radial direction of the circular surface 44. As shown in FIG. 4A, the bevel cleaning nozzle 46 has a discharge port 46a for discharging a cleaning liquid for cleaning the bevel portion of the wafer W. The discharge port 46 a is provided so as to face the peripheral edge of the back surface of the wafer W with the bevel cleaning nozzle 46 fitted in the recess 47. A cleaning liquid supply source (not shown) is connected to the bevel cleaning nozzle 46 via a pipe, and the bevel cleaning nozzle 46 discharges a cleaning liquid (for example, a solvent capable of dissolving semi-solidified resist) from the discharge port 46a. can do.

  The processing cup 33 is accommodated in the housing 80. A loading / unloading port 81 for loading / unloading the wafer W via a transfer arm (not shown) is provided on the side wall of the housing 80. A shutter 82 is provided at the carry-in / out port 81. The shutter 82 is closed except when the wafer W is carried into and out of the housing 80 by a transfer arm (not shown). A fan filter unit (FFU) 83 is provided in the upper part of the housing 80. The FFU 83 blows out a clean gas, for example, clean air, downwardly into the housing 80 via a pipe 84 connected to the upper part of the FFU 83. An exhaust passage 85 for sucking and exhausting the atmosphere in the housing 80 is connected to the bottom of the housing 80. A downward air flow (down flow) is formed in the housing 80 by the downward jet of clean gas from the FFU 83 and the suction exhaust through the exhaust pipe 85.

  In the housing 80, a solvent nozzle 91 for discharging a solvent, for example, thinner (referred to as pre-wet thinner) and a resist nozzle 92 for discharging a resist are provided above the processing cup 33. The solvent nozzle 91 and the resist nozzle 92 are connected to a solvent supply source 95 and a resist supply source 96 through supply pipes 93 and 94. The solvent nozzle 91 and the resist nozzle 92 are configured to be movable by respective nozzle moving arms (not shown) between a predetermined position above the wafer W and a standby position on the side of the processing cup 33. Both nozzles 91 and 92 may be moved by a common nozzle moving arm.

  All operations of the resist coating apparatus (for example, driving of the rotation driving unit 32, switching of the damper 54, supply of liquid from the solvent nozzle 91, the resist nozzle 92, etc.) are controlled by the control unit 90. The control part 90 can be comprised from the computer containing a central processing unit (CPU) and the program which operates a resist coating device. This program includes a group of steps (commands) for control related to the supply timing and supply amount of the resist solution, the rotation speed and rotation time of the spin chuck 31, the supply timing and supply amount of the cleaning solution, etc., based on a predetermined schedule. Etc. are assembled. This program is stored in a storage medium such as a hard disk, a compact disk, a magnet optical disk, or a memory card, and installed in a computer.

  Next, the operation of the resist coating apparatus including the cup according to the first configuration example will be described. It should be noted that the process conditions (rotational speed change, exhaust flow rate change) shown below are merely examples and can be modified as appropriate.

  A transfer arm (not shown) loads the wafer W into the housing 80 from the loading / unloading port 81. The arm places the wafer W on the placement surface of the spin chuck 31 raised by a lifting mechanism attached to the rotation drive unit 32, and the spin chuck 31 vacuum-sucks the wafer W to hold it horizontally. . Thereafter, the spin chuck 31 is lowered and the wafer W is stored in the processing cup 33. During the operation of the resist coating apparatus, a down flow is always formed in the housing 80 due to the injection of clean gas by the FFU 83 and the exhaust through the exhaust pipe 85, and the inside of the processing cup 33 through the exhaust pipe 53 is formed. The atmosphere is evacuated at all times.

  Next, the wafer W is rotated by the spin chuck 31 at a first rotation speed, for example, 2000 rpm. At this time, the exhaust system connected to the exhaust pipe 53 is adjusted to obtain a “high exhaust” state. An air flow as schematically shown in FIG. 6 is generated in the processing cup 33 due to the down flow in the housing 80, the suction through the exhaust pipe 53, and the dragging of the air in the vicinity of the wafer W by the rotating wafer W. It should be noted that the shape of the annular flow path 79 shown in FIG. 6 does not correspond to FIG. 1 in order to secure a space for displaying airflow and mist in the drawing (the same applies to FIG. 7). The airflow flows through an annular space 78 between the outer cup member 60 and the intermediate cup member 50 and an annular flow path 79 between the intermediate cup member 50 and the inner cup member 40. The airflow that flows through the annular space 78 merges with the airflow that passes through the through hole 77 and flows through the annular flow path 79. The airflow finally reaches the exhaust pipe 53. Further, the solvent nozzle 91 is moved from the standby position above the center of the wafer by a moving mechanism (not shown). Then, the wafer W thinner is supplied from the solvent nozzle 91 to wet the entire surface of the wafer W with the thinner, so that a resist solution to be applied later is easily extended (prewetting step S1). After supplying the thinner, the solvent nozzle 91 is retracted to the standby position, and the resist nozzle 92 is moved above the center of the wafer W.

  Next, while maintaining the high exhaust state, the rotational speed of the wafer W is increased to a second speed, for example, 2500 rpm, and the resist solution is supplied from the resist nozzle 92 to the center of the wafer W. At this time, the resist solution is extended from the center portion to the peripheral portion by the centrifugal force generated by the rotation of the wafer W, and excess resist is shaken off from the surface of the wafer W (resist supply diffusion step S2). Note that the number of rotations of the wafer W may be once decreased after the prewetting process and before the start of the resist supply and diffusion process. Excess resist solution shaken off from the wafer W during the resist supply / diffusion process scatters into the annular flow path 79, travels along the surface of the lower guide part 45, reaches the liquid receiving part 51, and is processed from the waste liquid path 52. It is discharged outside the cup 33. The resist solution in the form of a mist rides on the airflow described above and flows through the annular flow path 79 and is discharged from the exhaust pipe 53 to the outside of the processing cup 33. At this time, since the fluid turning surface 72 has the curved shape as described above, is it prevented that the resist mist that is shaken off from the wafer W and collides with the fluid turning surface 72 is bounced back toward the wafer W? Or at least significantly suppressed.

Next, the resist solution on the wafer W is flattened by reducing the rotational speed of the wafer W to a low third speed, for example, 100 rpm (ie, reducing the centrifugal force acting on the resist solution) (flattening step S3). ).
Next, the high exhaust state is switched to the low exhaust state, the number of rotations of the wafer W is increased to a fourth speed, for example, 1500 rpm, and the resist film thickness is finally adjusted for a predetermined time, for example, about 20 seconds. At the same time, the resist solution is dried to solidify the resist solution to such an extent that fluidity is lost (first drying step S4).

  Next, the low exhaust state is switched to the high exhaust state, the rotation speed of the wafer W is increased to a fifth speed, for example, 2000 rpm, and the solvent as the cleaning liquid is discharged from the bevel cleaning nozzle 46 to the peripheral portion of the wafer W. The cleaning liquid is discharged for 15 seconds, for example. As schematically shown in FIG. 7, the cleaning liquid flows from the bevel portion on the back surface side of the wafer W to the bevel portion on the front surface side, and the peripheral edge portion of the resist film is removed with a predetermined width (bevel cleaning step S5). Even during the bevel cleaning process, the cleaning liquid supplied to the wafer W scatters around the wafer W. The scattered cleaning liquid is carried to the liquid receiving portion 51 on the air flow schematically shown in FIG. It is discharged from the path 52 to the outside of the processing cup 33. A part of the mist-like cleaning liquid is discharged from the exhaust pipe 53 to the outside of the processing cup 33.

  Next, while the discharge of the cleaning liquid is stopped, the cleaning liquid is dried while maintaining the high exhaust state and maintaining the number of rotations of the wafer W as it is, for example, for 5 seconds (second drying step S6). Thus, a series of resist coating processes are completed. Thereafter, the rotation of the wafer W is stopped, and the wafer W is unloaded from the resist coating apparatus by a procedure reverse to the above-described procedure for loading the wafer W.

  A specific example of the change in wafer rotation speed, the supply timing of various processing liquids, and the change in the exhaust state during the above steps S1 to S6 is also shown in FIG. In FIG. 15, arrows with PWT, PR, and CL mean that thinner, resist solution, and cleaning solution are supplied. Further, the lower part of FIG. 15 shows the change of the wafer rotation speed, and the upper part shows the change of the exhaust state (exhaust flow rate) of the processing cup.

[Second configuration example]
Next, with reference to FIGS. 8 and 9, the processing cup 33 </ b> A according to the second configuration example (embodiment of the invention) will be described focusing on the differences from the processing cup 33 according to the first configuration example. 8 and 9, the same or substantially the same parts as those of the processing cup 33 are denoted by the same reference numerals, and redundant description is omitted. 8 and 9, the coupling structure of each cup member is shown in a simplified manner, similarly to FIGS. 1 to 5 showing the first configuration example. Needless to say, the configuration of the liquid processing apparatus including the processing cup according to the second configuration example may be the same as that described in the description of the first configuration example.

  The inclined surface 75 and the vertical surface 74 that are separated in the intermediate cup member 50 of the processing cup 33 form a single curved surface 75 'in the intermediate cup member 50A of the processing cup 33A. However, for this portion, any configuration of the processing cups 33 and 33A may be adopted. In addition, although there is a slight difference in shape between the processing cups 33 and 33A, any configuration may be adopted for portions not described below.

  Similar to the first configuration example, the fluid turning surface 72 according to the second configuration example has the entire outline connecting the upper end edge (70e) and the lower end edge (72e) of the fluid turning surface 72 in a cross-sectional view. It can be configured as a smooth curve located above (upwardly convex) the line segment (S) (this line segment is inclined so as to become lower toward the outside). However, the fluid turning surface 72 does not have to be entirely curved. From the viewpoint of not disturbing the airflow, it is preferable that the portion where the horizontal plane 76 and the fluid turning surface 72 intersect has an edge (blade) shape. In this case, if the fluid turning surface 72 is curved up to its upper end (inner end), manufacturing becomes difficult. Therefore, in actual manufacturing, the contour of the upper end (inner end) portion of the fluid turning surface 72 (region indicated by reference numeral 72a in FIG. 8) is a straight line, and the lower end (outer end) portion of the fluid turning surface 72 that follows is straight. It is also preferable that the contour is a circular arc smoothly connected to the straight line. In this case, for example, the angle formed by the straight line with respect to the horizontal line (see θ in FIG. 9) is preferably 0 (not including 0) to 20 degrees, more preferably 0 (not including 0) to 15 degrees. The fluid turning surface 72 has a small angle (preferably 0 (not including 0) to 20 degrees) between the fluid turning surface 72 and the virtual horizontal plane within a predetermined range (proximal range) closer to the wafer W. Preferably, 0 (not including 0) to 15 degrees) and the angle is constant or gradually increases, and the angle gradually increases in a range (distal range) farther from the wafer W than the proximal range. It is desirable to configure as follows. Thereby, the possibility that the mist colliding with the fluid turning surface 72 will bounce back to the wafer W is minimized. In addition, the fluid turning surface 72 is inclined so that the outline of the fluid turning surface 72 is a line segment S connecting the upper edge 70e and the lower edge 72e of the fluid turning surface 72 (this line segment becomes lower as going outward). The distance between the line segment S and the contour line increases monotonously as it goes outwards, takes a maximum value, and then decreases monotonically as it goes outwards. Can be formed.

  The difference that causes a large difference in the performance of the processing cups 33 and 33A is that the shape of the inner cup member 40A of the processing cup 33A is different from the inner cup member 40 of the processing cup 33. In other words, the inclined convex portion 43a that is in the inner cup member 40 is eliminated, and instead, the top surface 43b that is formed of an annular substantially horizontal surface between the annular inner inclined surface 43 and the annular outer inclined surface 41. Is formed. The inner inclined surface 43, the top surface 43b, and the outer inclined surface 41 are connected in this order from the inside.

  The top surface 43b has a predetermined length (r1 in FIG. 9) radially inward and a predetermined length (r2 in FIG. 9) radially outward with reference to the position directly below the peripheral edge We of the wafer held by the spin chuck 31. ) Only spread. That is, in the plan view, the peripheral edge We of the wafer is included in the annular top surface 43b and extends along a circle concentric with the top surface 43b (this is apparent from FIGS. 8 and 9). Further, the inner end edge 70e of the upper guide portion 70 of the intermediate cup member 50A is at a position directly above the top surface 43b. That is, in plan view, the inner edge 70e is included in the annular top surface 43b and extends along a circle concentric with the top surface 43b (this is also apparent from FIGS. 8 and 9).

  The top surface 43b does not have to be a strictly horizontal plane, and may be substantially parallel to the horizontal plane. In other words, the top surface 43b may be approximately parallel to the back surface of the wafer W held by the spin chuck 31. The top surface 43b may have an inclination of about 0 to ± 10 degrees with respect to the horizontal plane. In particular, since a liquid such as a resist solution may adhere to the outer portion of the top surface 43b, the outer portion of the top surface 43b (the portion corresponding to the length r2 in FIG. 9) is 0 to the horizontal plane. It is also preferable to provide an inclination of about +10 degrees (an inclination that becomes lower toward the outside). In this way, even if the liquid adheres to the top surface 43b, the liquid is smoothly guided to the outer inclined surface 41.

  As described above, when the wafer W is rotated, the air around the front and back surfaces of the wafer W is dragged to generate an air flow toward the outside of the wafer W. Such airflow on the back side of the wafer is called “back flow”. The backflow generated in the space surrounded by the back surface of the wafer W, the inner inclined surface 43 and the circular surface 44 (hereinafter referred to as “wafer back surface side space”) flows out between the peripheral surface of the wafer back surface and the top surface 43b. To do. The top surface 43b guides the backflow flowing out from the wafer rear surface side space. As a result, the top surface 43b flows into the annular flow path 79 from the gap between the inner edge 70e of the upper guide portion 70 and the peripheral edge We of the wafer W. Change the airflow coming. This point will be described in detail later.

  Here, on the assumption that this resist coating apparatus is configured to process a 12-inch wafer, suitable dimensions of each part will be described with reference to FIG. First, r1 described above is preferably in the range of 5 to 10 mm. If r2 described above is too small, the backflow guide effect described later cannot be sufficiently obtained. On the other hand, if r2 is too large, the liquid scattered from the wafer W may adhere to the outer portion of the top surface 43b and deposits may be generated. For this reason, it is preferable that r2 mentioned above shall be the range of 5-10 mm. The distance h2 from the top surface 43b to the back surface of the wafer W is preferably 2 to 3 mm. The height difference h1 between the inner edge 70e of the upper guide portion 70 and the surface of the wafer W is preferably 2 to 3 mm. The distance g1 from the top surface 43b to the inner edge 70e of the upper guide portion 70 is preferably 5 to 6 mm. The distance r3 from the peripheral edge We of the wafer W to the inner edge 70e of the upper guide part 70 is preferably 3 to 4 mm.

  Referring to FIG. 8 again, as in the first configuration example, the inner cup member 40A is provided with a plurality of (for example, three) recesses 47 ′, and the bevel cleaning nozzle 46 ′ can be fitted into each recess 47 ′. It can be done. Each bevel cleaning nozzle 46 ′ is movable in the radial direction of the inner cup member 40 </ b> A by a radial guide mechanism (not shown) made of a guide rail or the like similar to the first configuration example. When the bevel cleaning nozzle 46 ′ is fitted into the recess 47 ′, each surface thereof is formed so as to be positioned on a virtual extension of the inner inclined surface 43 and the top surface 43 b. As in the first configuration example, each bevel cleaning nozzle 46 ′ is formed with a discharge port 46a. The discharge port 46a has a peripheral edge on the back surface of the wafer W when the bevel cleaning nozzle 46 ′ is fitted in the recess 47 ′. Turn to the part.

  The resist coating apparatus provided with the processing cup 33 </ b> A according to the second configuration example can perform the steps described for the resist coating apparatus provided with the processing cup 33 according to the first configuration example in the same manner.

  Next, the airflow in the processing cup and the mist collision with the upper guide part 70 according to the first configuration example and the second configuration example (embodiment of the invention) will be described in comparison with the conventional configuration example by the applicant. . 10 shows a conventional configuration example, FIG. 11 shows a first configuration example, and FIG. 12 shows a second configuration example.

First, the conventional configuration example shown in FIG. 10 is different from the first configuration example in that the upper guide portion 70 ′ has a linear lower surface in cross-sectional view. In this case, the liquid (for example, resist liquid) splashed from the wafer W collides with the lower surface of the upper guide portion, for example, in the vicinity of the point P while vigorously. The mist collides with the lower surface of the upper guide portion with a relatively large incident angle. At this time, part of the processing liquid that has bounced back may reach the wafer W and reattach to the wafer W.
This problem is solved by forming a convex surface on the lower surface of the upper guide portion 70, that is, the fluid turning surface 72 in the first configuration example shown in FIG. In other words, in the first configuration example, in the vicinity of the wafer W (for example, a proximal region from the wafer peripheral edge We to a position 30 mm away radially outward), the fluid turning surface 72 is small by about 0 to 20 degrees with respect to the horizontal plane. Since it is inclined at an inclination angle (see θ in FIG. 9), in the vicinity of the wafer W, mist scattered from the wafer W enters the fluid turning surface 72 which is the lower surface of the upper guide portion 70 with a relatively small incident angle. To do. For this reason, the mist hardly rebounds toward the wafer W side. Note that the θ value as described above can be set because the contour line of the fluid turning surface 72 is positioned above the line segment connecting the upper edge and the lower edge of the fluid turning surface 72 in a cross-sectional view (upward). This is because it is formed to be convex.

Further, in the conventional configuration example, the protrusion (100) is not provided on the inner surface of the outer cup member 60 ′ compared to the first configuration example. In this case, as indicated by the symbol RF in FIG. 10, a part of the mist-containing fluid flowing down the annular flow path 79 ′ enters the annular space 78 ′ through the through hole 77 ′. In the conventional configuration example, since the flow velocity of the fluid flowing into the annular space 78 ′ is relatively low, the fluid entering the annular space 78 ′ from the annular flow path 79 ′ through the through hole 77 ′ is above the wafer W. There is a risk of returning to the space and reattaching to the wafer.
This problem is considerably improved by providing the protrusion 100 on the inner surface of the outer cup member 60 in the first configuration example. As shown in FIG. 11, the mist-containing air flow RF that enters the annular space 78 from the annular flow path 79 through the through hole 77 is turned by the protrusion 100 and returned to the through hole 77.

  For the above two reasons, from the viewpoint of preventing mist reattachment to the wafer W, the first configuration example is significantly superior to the conventional configuration example.

  However, the first configuration example has room for further improvement from the viewpoint of improving the film thickness uniformity. This is improved by the second configuration example (embodiment of the invention). First, problems in the first configuration example will be described. In the first configuration example, because of the narrow gap between the peripheral edge We of the wafer W and the inner edge 70e of the upper guide portion 70, the flow velocity of the airflow (F1) entering the gap is increased, and the traveling direction of the airflow is The angle formed with the wafer surface also increases. Such an air flow locally accelerates the drying of the resist solution on the peripheral surface of the wafer W and moves the resist solution on the peripheral surface of the wafer W toward the wafer peripheral We. Thereby, the film thickness of the resist solution at the peripheral edge portion of the wafer W becomes larger than that at the central portion. That is, the film thickness in-plane uniformity is impaired.

  The above problem is solved by providing the inner cup member 40 having the top surface 43b in the second configuration example. The inventor believes that the top surface 43b of the second configuration example plays the following role.

  As described above, the backflow BF is generated in the wafer back surface side space by dragging the air in the vicinity of the wafer back surface by the rotation of the wafer W. The backflow BF is guided to the narrow gap between the back surface of the wafer W and the top surface 43b by the inner inclined surface 43, and flows out through the narrow gap. This phenomenon occurs also in the first configuration example. However, in the first configuration example, since the inclined convex portion 43a is located on the inner side of the wafer peripheral edge, the backflow immediately stalls after flowing out from the narrow gap between the inclined convex portion 43a and the wafer back surface, and directivity. Lose. For this reason, it does not reach the mainstream (F1). On the other hand, in the second configuration example, since the top surface 43b extends to the outside of the peripheral edge We of the wafer W, the backflow flows out from the narrow gap, and then from the region above the top surface 43b. The horizontal directionality is maintained and the flow velocity is not greatly reduced until it appears. In addition to this, in the second configuration example, the inner edge 70e of the upper guide portion 70 is also located above the top surface 43b. That is, the horizontal plane 43b exists directly under the gap between the inner edge 70e of the upper guide portion 70 and the wafer peripheral edge We. For the above reason, the air flow F1 that tries to enter the annular flow path 79 from the gap between the inner edge 70e of the upper guide portion 70 and the wafer peripheral edge We enters the gap in the manner as in the first configuration example. It is not possible to enter the gap while being turned in the horizontal direction. That is, the incident angle of the airflow F1 on the peripheral surface of the wafer W is significantly reduced.

  Further, in the second configuration example, the inner edge 70e of the upper guide portion 70 is larger than the flow velocity of the air flow F1 entering the annular flow path 79 through the gap between the inner edge 70e of the upper guide portion 70 and the wafer peripheral edge We. It was confirmed that the flow velocity of the air flow F2 entering the annular space 78 from the gap between the outer cup member 60 and the outer cup member 60 increases (the reverse is true in the first configuration example). The inventor has not clearly grasped the cause of this phenomenon, but thinks that the cause is that the pressure loss in the vicinity of the top surface 43b is increased by providing the top surface 43b. In any case, it is clear that the slow flow rate of the air flow F1 has a positive effect on the film thickness uniformity. It is clear that the increase in the flow velocity of the airflow F2 has a positive effect on the prevention of mist backflow caused by the airflow RF. Even if the flow velocity of the air flow F1 is slow, the mist that rebounds from the fluid turning surface 72 toward the wafer W is significantly reduced due to the characteristic shape of the fluid turning surface 72 of the upper guide portion 70, and the backflow is reduced. Since BF also maintains the directivity in the direction of the fluid turning surface 72, no problem occurs. Rather, it can be considered that the positive influence is greater due to the decrease in the amount of mist that flows back toward the wafer W in the annular space 78 by increasing the flow velocity of the air flow F2. Therefore, it can be said that the second configuration example is superior in the mist re-adhesion preventing function than the first configuration example.

  As described above, it is clear that the second configuration example can achieve the further advantageous effect of improving the film thickness uniformity while improving rather than impairing the mist reattachment prevention function of the first configuration example. It is.

  Next, the results of the performance comparison test between the second configuration example and the conventional configuration example will be described with reference to FIGS.

  First, with reference to FIG. 13, the result of a comparison of the film thickness increase at the wafer peripheral portion will be described. A resist film was formed on the wafer according to the steps described above in connection with the first configuration example. The exhaust pressure from the pre-wet process to the planarization process was changed, and the film thickness at the peripheral edge of the wafer was examined. The result is shown in the graph of FIG. The horizontal axis of the graph represents the exhaust pressure [Pa], and the vertical axis represents the wafer peripheral film thickness [nm]. The white bars are data of the conventional configuration example, and the black bars are data of the second configuration example. As is apparent from the graph, the peripheral film thickness is less increased in the second configuration example than in the conventional configuration example, regardless of the exhaust pressure. Further, in the second configuration example, the increase in the peripheral portion film thickness accompanying the increase in the exhaust pressure was smaller than that in the conventional configuration example. This makes it possible to increase the exhaust pressure (flow rate) with emphasis on prevention of mist re-adhesion without considering the possibility of non-uniform film thickness, especially during the period when the resist solution has fluidity. It means that.

  Next, with reference to FIG. 14, the result of comparing the amount of mist reattached to the wafer will be described. A resist film was formed on the wafer according to the steps described above in connection with the first configuration example. The exhaust pressure from the bevel cleaning step to the final drying (second drying) step was changed to examine the amount of mist adhering to the wafer surface. The results are shown in the graph of FIG. The horizontal axis of the graph is the exhaust pressure [Pa], and the vertical axis is the number of traces of mist adhesion observed on the wafer surface. White circles (◯) are data of the conventional configuration example, and black squares (♦) are data of the second configuration example. As is apparent from the graph, in the second configuration example, mist reattachment to the wafer was not confirmed until the exhaust pressure decreased to less than 20 Pa. This means that the bevel cleaning process, which requires a particularly long time, and the final drying (second drying) process can be performed in a low exhaust state. Therefore, it means that one coating / developing apparatus can be provided with a larger number of coating units than before without increasing the burden on the exhaust system. Of course, in each process from the pre-wet process to the flattening process performed in a high exhaust state, the safety margin regarding the mist reattachment to the wafer can be greatly increased.

Since the processing cup according to the second configuration example is excellent in mist reattachment prevention performance, the processing cup according to the first configuration example can be used in a state where the exhaust gas flow rate is lower than that of the processing cup according to the first configuration example. An example of a processing recipe when the processing cups according to the first configuration example and the second configuration example are used is shown in the graph of FIG. In the lower part of the graph, the change in wafer rotation speed and the liquid supply timing (common to the first and second configuration examples) are shown, and in the upper part of the graph, the change in the exhaust flow rate and the periods corresponding to steps S1 to S6, respectively. It is shown. Up to the resist drying step S4, the exhaust flow rate is the same in the first configuration example and the second configuration example. In the steps after the bevel cleaning step S5, the second configuration example (see the solid line labeled 2) is in a low exhaust state (exhaust flow rate is about 1.2 m ³ / min) thanks to the excellent mist re-adhesion prevention function. ) Is possible to drive. On the other hand, in the first configuration example (see the broken line labeled 1), the engine is operated in a high exhaust state (exhaust flow rate is about 2.6 m ³ / min). In addition, since the mist re-adhesion prevention function is also relatively excellent in the first configuration example, the exhaust flow rate can be slightly reduced, but in any case it cannot be reduced to the level of the first configuration example. If the exhaust flow rate in the bevel cleaning step S5 and the second drying step S6, which require a relatively long time, can be lowered, the number of resist coating devices included in the coating and developing device is increased without increasing the capacity of the exhaust system. It becomes possible.

  Finally, an example of a configuration of a resist pattern forming system in which an exposure apparatus is connected to a coating and developing apparatus provided with a resist coating apparatus will be briefly described. As shown in FIGS. 16 to 18, the coating and developing apparatus is provided with a carrier block G1. The transfer arm C takes out the wafer W from the sealed carrier 200 mounted on the mounting table 201 of the carrier block G1, transfers the wafer W to the processing block G2 adjacent to the carrier block G1, and the transfer arm C Then, the processed wafer W processed in the processing block G2 is received and returned to the carrier 200.

  As shown in FIG. 17, the processing block G2 includes a first block (DEV layer) B1 for performing development processing and a second block for performing formation processing of an antireflection film formed under the resist film. (BCT layer) B2, a third block (COT layer) B3 for applying a resist solution, and a fourth block (TCT layer) for forming an antireflection film formed on the resist film ) It is configured by laminating B4 in order from the bottom.

The third block (COT layer) B3 performs a pre-treatment and a post-treatment of the resist coating unit 2 (see FIG. 16) for applying a resist solution (the resist coating apparatus described above) and the processing performed in the resist coating unit. For example, a heating / cooling processing unit group having a substrate heating unit and a transfer arm A3 for transferring the wafer W between the units of the third block (COT layer) B3.
The second block (BCT layer) B2 and the fourth block (TCT layer) B4 include a liquid processing unit for applying a chemical solution for forming an antireflection film by spin coating, a heating / cooling processing unit group, The transfer arms A2 and A4 that transfer the wafer W between the units of the respective layers are provided.
Development units are stacked in two stages in the first processing block (DEV layer) B1. The DEV layer B1 is provided with a common transfer arm A1 for transferring the wafer W to these two stages of development units.
As shown in FIGS. 16 and 18, the processing block G2 is provided with a unit shelf U1 formed by stacking a plurality of units. The wafer W can be transferred between the units in the unit shelf U1 by the transfer arm D1 which can be moved up and down provided in the vicinity of the unit shelf U1.

  In the resist pattern forming system, the transfer arm C in the carrier block G1 transfers the wafer W taken out from the carrier 200 to one transfer unit of the unit shelf U1, for example, the transfer corresponding to the second block (BCT layer) B2. Pass to unit CPL2. From there, the wafer W is transferred to the transfer unit CPL3 by the transfer arm D1, and from there, the wafer W is transferred to the third block (COT layer) B3 by the transfer arm A3, and is hydrophobically applied to the surface of the wafer W by the hydrophobic processing unit. Then, a resist film is formed on the surface of the wafer W by a resist coating unit. The wafer W on which the resist film is formed is transferred to the delivery unit BF3 of the shelf unit U1 by the transfer arm A3.

Thereafter, the wafer W is transferred into the fourth block (TCT layer) B4 via the transfer unit BF3, the transfer arm D1, the transfer unit CPL4, and the transfer arm A4, and the antireflection film forming unit prevents reflection on the surface of the wafer W. A film is formed. Thereafter, the wafer is transferred to the transfer unit TRS4 by the transfer arm A4.
In some cases, an antireflection film is not formed on the resist film, or an antireflection film is formed in the second block (BCT layer) B2 instead of performing the hydrophobic treatment on the wafer W. . The wafer transfer route is changed as appropriate according to the processing to be performed on the wafer.

  A shuttle arm E for directly transferring the wafer W from the delivery unit CPL11 provided on the unit shelf U1 to the delivery unit CPL12 provided on the unit shelf U2 is provided in the upper part of the DEV layer B1. The wafer W on which the resist film and the antireflection film are formed is transferred from the transfer unit TRS4 to the transfer unit CPL11 by the transfer arm D1, and is directly transferred from there to the transfer unit CPL12 of the unit shelf U2 by the shuttle arm E. Captured in block G3. The delivery unit labeled “CPL” also has a function as a cooling unit for temperature control, and the delivery unit labeled BF is a buffer unit on which a plurality of wafers W can be placed. It has the function of.

  Next, the wafer W is transferred to the exposure apparatus G4 by the interface arm B, and after performing a predetermined exposure process, it is placed on the transfer unit TRS6 of the unit shelf U2 and then returned to the processing block G2. Thereafter, the wafer W is developed in the first block (DEV layer) B1, and is transferred to the transfer unit TRS1 in the unit shelf U1 accessible by the transfer arm C by the transfer arm A1, and is transferred by the transfer arm C. Returned to carrier 200.

  It should be noted that the processing cup according to the second configuration example (embodiment of the invention) described above is not useful only in the resist coating apparatus. It is also useful for a coating apparatus that performs coating film formation processing other than resist coating processing that requires film thickness uniformity and mist re-adhesion prevention, for example, a coating film formation processing for forming an antireflection film or a protective film on a wafer. It is clear that there is. Further, it is obvious that the present invention is useful not only in the coating film forming process but also in various liquid processes such as a chemical process and a cleaning process after the development process that require prevention of mist reattachment. That is, it is obvious that the processing cup according to the second configuration example described above is useful in various liquid processings in which a predetermined processing is performed by supplying a processing liquid to the substrate while rotating the circular substrate.

W substrate (wafer)
We Substrate edge 31 Spin chuck 33 Processing cup 40 First cup member (inner cup member)
41 Outer inclined surface 43 Inner inclined surface 43b Top surface 46 'Second treatment liquid nozzle (Beberlins nozzle)
50 (70) Third cup member (intermediate cup member)
60 Second cup member (outer cup member)
53 Exhaust path 70e Inner edge 72 of third cup member Fluid turning surface 72e of third cup member Outer edge S of fluid turning surface Virtual line segment 77 Passage (through hole)
78 Second annular channel (annular space)
79 First annular channel (annular space)
92 First treatment liquid nozzle (resist nozzle)
100 Convex part of second cup member

Claims (5)

In liquid processing equipment,
A spin chuck configured to hold the substrate horizontally and rotate about a vertical axis;
A processing cup provided so as to surround the periphery of the substrate held by the spin chuck, wherein the processing cup is connected to an exhaust path for exhausting the atmosphere in the processing cup;
A first processing liquid nozzle provided to supply a first processing liquid to the substrate held by the spin chuck;
With
The processing cup is
A first cup member provided to be positioned at a position lower than the substrate when the substrate is held by the spin chuck;
A second cup member provided outside and above the first cup member;
A third cup member provided between the first cup member and the second cup member, wherein a space between the first cup member and the second cup member is divided. A third cup member defining a first annular channel between the first and third cup members and a second annular channel between the second and third cup members;
Have
The first and second annular channels communicate with the exhaust passage;
The third cup member has an inner edge provided so as to be located at a position higher and higher than the peripheral edge of the substrate held by the spin chuck,
The first cup member includes an annular inner inclined surface that increases in height toward the outside, a generally horizontal annular top surface connected to an outer peripheral edge of the inner inclined surface, and an outer peripheral edge of the top surface. And an annular outer inclined surface that decreases in height as it goes outward.
The annular top surface of the first cup member is provided so as to include a peripheral edge of the substrate held by the spin chuck and an inner edge of the third cup member in a plan view.
A liquid processing apparatus. The third cup member has an annular fluid turning surface facing the first cup member, and the fluid turning surface extends outward from the inner edge of the third cup member. And
The fluid turning surface has an outer edge, and in a longitudinal sectional view, the contour line of the fluid turning surface protrudes upward with respect to an imaginary line segment connecting the inner edge and the outer edge. Or a combination of straight lines and curves smoothly connected to each other, and the imaginary line segment becomes lower as it goes outwards.
The liquid processing apparatus according to claim 1. A passage for connecting the first and second annular flow paths to each other is provided, so that fluids flowing through the first and second annular flow paths are joined and then guided to the exhaust path. Is configured as
A convex portion projecting toward the third cup member is provided on a surface of the second cup member facing the third cup member.
The liquid processing apparatus according to claim 1 or 2.   The liquid processing apparatus according to claim 3, wherein the passage includes a plurality of through holes provided in the third cup member. A second treatment liquid nozzle provided to supply a second treatment liquid to the substrate held by the spin chuck;
The first processing liquid nozzle is provided to supply the first processing liquid to the surface of the substrate held by the spin chuck, and the second processing liquid nozzle is held by the spin chuck. Provided to supply the second treatment liquid to the back surface of the substrate;
The liquid processing apparatus as described in any one of Claims 1-4.

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