JP2013062297A - Semiconductor light-emitting device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and a manufacturing method of the same, which improve reliability in manufacturing.SOLUTION: A semiconductor light-emitting device 10 comprises: a chip substrate 1; a first terminal electrode 2a and a second terminal electrode 2k arranged on the chip substrate 1; a reflection case 5 arranged so as to surround an outer edge of a top face of the chip substrate 1; a semiconductor light-emitting element 3 arranged on the first terminal electrode 2a via an AuSn eutectic layer; a bonding wire 4 connecting the semiconductor light-emitting element 3 with the second terminal electrode 2k; and a phosphor layer 6 arranged on the inside surrounded by the reflection case 5, in which light-emitting phosphors 61 and 62 are mixed and dispersed in a translucent resin. And a manufacturing method of the semiconductor light-emitting device 10 is provided.

Description

  The present invention relates to a semiconductor light emitting device and a method for manufacturing the same, and more particularly to a semiconductor light emitting device with improved reliability during manufacture and improved heat dissipation characteristics.

  As a light-emitting device using a semiconductor light-emitting element, a light-emitting diode (LED: Light Emitting Diode) is accommodated inside a concave cup portion of a package, and a translucent member containing a fluorescent material for converting the wavelength of the light emission output of the LED Has a configuration in which the cup portion is filled (see, for example, Patent Document 1 and Patent Document 2).

  In a conventional method for manufacturing a surface mount LED, a lamp house made of a non-translucent resin of a package in a high temperature environment when die bonding an LED chip to a lead frame by a bonding method such as eutectic bonding or solder bonding. It is easy to cause deformation and burn.

  For this reason, a resin paste has been used when the LED chip is die-bonded to the lead frame. This resin paste has poor heat dissipation.

  On the other hand, a semiconductor light-emitting device in which the lamp frame is not exposed to a high temperature environment when the semiconductor element is mounted on the lead frame by integrally forming the lead frame and the lamp house after mounting the semiconductor light-emitting element on the lead frame. Is also disclosed (for example, see Patent Document 3).

JP 2008-244421 A JP 2010-114218 A JP 2005-294736 A

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor light emitting device having improved reliability during manufacture and improved heat dissipation characteristics, and a method for manufacturing the same.

  According to one aspect of the present invention, a chip substrate, a first terminal electrode and a second terminal electrode disposed on the chip substrate, a reflective case disposed so as to surround an upper surface outer edge of the chip substrate, A semiconductor light emitting device disposed on the first terminal electrode via an AuSn eutectic layer, a bonding wire connecting the semiconductor light emitting device and the second terminal electrode, and an interior surrounded by the reflective case, and emitting light There is provided a semiconductor light emitting device including a phosphor layer in which a phosphor is mixed and dispersed in a translucent resin.

According to another aspect of the present invention, a step of forming a first terminal electrode and a second terminal electrode on a chip substrate, a step of forming a reflective case so as to surround an upper surface outer edge of the chip substrate, and the first terminal Bonding a semiconductor light emitting element on the electrode via an AuSn eutectic layer, bonding the semiconductor light emitting element and the second terminal electrode using a bonding wire,
There is provided a method of manufacturing a semiconductor light emitting device, which includes filling a phosphor layer in which a light emitting phosphor is mixed and dispersed in a translucent resin in an interior surrounded by the reflection case.

  ADVANTAGE OF THE INVENTION According to this invention, the reliability at the time of manufacture can be provided, and the semiconductor light-emitting device which improved the thermal radiation characteristic, and its manufacturing method can be provided.

1 is a schematic cross-sectional structure diagram of a semiconductor light emitting device according to an embodiment. In the semiconductor light-emitting device which concerns on embodiment, the expanded typical cross-section figure which shows the part which mounted the semiconductor light-emitting element on the terminal electrode through the AuSn eutectic layer. 6 is a characteristic example of a safe operation region showing a relationship between a maximum forward current Imax (mA) and an ambient temperature Ta (° C.) in a semiconductor light emitting device according to a comparative example. 6 is a characteristic example showing a relationship between a thermal resistance θj-a (° C./W) and an operation time Tp (ms) in a semiconductor light emitting device according to a comparative example. 6 is a characteristic example showing a relationship between a junction temperature Tj (° C.) and an operation time Tp (ms) in a semiconductor light emitting device according to a comparative example. 6 is a characteristic example showing a relationship between a thermal resistance θj-a (° C./W) and an operation time Tp (ms) in the semiconductor light emitting device according to the embodiment. 6 is a characteristic example showing a relationship between a junction temperature Tj (° C.) and an operation time Tp (ms) in the semiconductor light emitting device according to the embodiment. In the semiconductor light emitting device according to the embodiment (curve B) and the semiconductor light emitting device according to the comparative example (curve A), a safe operation region showing the relationship between the maximum forward current Imax (mA) and the ambient temperature Ta (° C.). Comparative example. In the semiconductor light-emitting device which concerns on embodiment, the schematic diagram which shows the relationship between the heating temperature and time in the manufacturing process which forms AuSn eutectic junction on a terminal electrode. Typical cross-section FIG. (1) which shows 1 process of the manufacturing method of the semiconductor light-emitting device which concerns on embodiment. Typical cross-section FIG. (2) which shows 1 process of the manufacturing method of the semiconductor light-emitting device which concerns on embodiment. Typical cross-section FIG. (3) which shows 1 process of the manufacturing method of the semiconductor light-emitting device which concerns on embodiment.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the embodiments of the present invention include the material, shape, structure, The layout is not specified as follows. Various modifications can be made to the embodiment of the present invention within the scope of the claims.

(First embodiment)
A schematic cross-sectional structure of the semiconductor light emitting device 20 according to the embodiment is represented as shown in FIG. 1. In the semiconductor light emitting device 20 according to the embodiment, the semiconductor is disposed on the terminal electrode 2 a via the AuSn eutectic layer 10. An enlarged schematic cross-sectional structure showing a portion on which the light emitting element 30 is mounted is expressed as shown in FIG.

  As shown in FIGS. 1 and 2, the semiconductor light emitting device 20 according to the embodiment includes a chip substrate 1, first and second terminal electrodes 2 a and 2 k disposed on the chip substrate 1, and the chip substrate 1. A reflection case 5 disposed so as to surround the outer edge of the upper surface of the semiconductor light emitting device, a semiconductor light emitting device 30 disposed on the first terminal electrode 2a via the AuSn eutectic layer 10, the semiconductor light emitting device 30 and the second terminal electrode 2k. A bonding wire 4 to be connected and a phosphor layer 6 which is disposed inside a reflective case 5 and in which a light-emitting phosphor is mixed and dispersed in a translucent resin.

  In the semiconductor light emitting device 20 according to the embodiment, the phosphor layer 6 is disposed inside the reflective case 5, and includes the first terminal electrode 2 a and the second terminal electrode 2 k, the AuSn eutectic layer 10, the semiconductor The light emitting element 30 and the bonding wire 4 are sealed.

(Comparative example)
In the semiconductor light emitting device according to the comparative example, die bonding between the semiconductor light emitting device 20 and the first terminal electrode 2a is performed using a resin paste instead of the AuSn eutectic layer 10 in FIGS. In the semiconductor light emitting device according to the comparative example, a characteristic example of the safe operation region showing the relationship between the maximum forward current Imax (mA) and the ambient temperature Ta (° C.) is expressed as shown in FIG. Also, a characteristic example showing the relationship between the thermal resistance Rθj-a (° C./W) and the operation time Tp (ms) is expressed as shown in FIG. 4, and the junction temperature Tj (° C.) and the operation time Tp (ms) An example of the characteristic indicating the relationship is expressed as shown in FIG.

  The thermal resistance Rθj-c (° C./W) is defined by the thermal resistance between the pn junction of the semiconductor light emitting element 30 and the solder mounting portion, and the thermal resistance Rθj-a (° C./W) is the pn junction of the semiconductor light emitting element 30. And the thermal resistance between the surrounding atmosphere. In the semiconductor light emitting device according to the comparative example, since the resin paste is used, the heat dissipation is poor, the value of the thermal resistance Rθj-c (° C./W) is about 150 ° C./W or less, and the thermal resistance Rθj− The value of a (° C./W) is about 250 ° C./W.

  In the semiconductor light emitting device 20 according to the embodiment, a characteristic example showing the relationship between the thermal resistance Rθj−a (° C./W) and the operation time Tp (ms) is expressed as shown in FIG. A characteristic example showing the relationship between the temperature (° C.) and the operating time Tp (ms) is expressed as shown in FIG.

  In the semiconductor light emitting device 20 according to the embodiment, since the AuSn eutectic layer 10 is used for die bonding between the semiconductor light emitting device 20 and the first terminal electrode 2a, the heat dissipation is good, and the thermal resistance Rθj. The value of −c (° C./W) is about 55 ° C./W or less, and the value of the thermal resistance Rθj-a (° C./W) is about 90 ° C./W.

  Further, in the semiconductor light emitting device according to the embodiment (curve B) and the semiconductor light emitting device according to the comparative example (curve A), a safe operation showing the relationship between the maximum forward current Imax (mA) and the ambient temperature Ta (° C.). A comparative example of the region is expressed as shown in FIG. In FIG. 8, the curve A of the semiconductor light emitting device according to the comparative example corresponds to an element twice as large as the element area of FIG.

  In the semiconductor light emitting device 20 according to the embodiment, since the die bonding between the semiconductor light emitting device 20 and the first terminal electrode 2a is performed using the AuSn eutectic layer 10, the heat dissipation is good, and the safe operation region Can also be set relatively wide.

  The substrate size of the semiconductor light emitting element 30 of the semiconductor light emitting device 20 according to the embodiment is, for example, about 30 mm × 10 mm. Further, the semiconductor light emitting device 20 according to the embodiment can be mounted on LED packages such as PLCC2 and PLCC4 which are ordinary PLCC (Plastic leaded chip carrier) packages. For example, the dimensions of the PLCC2 package are about 3.5 mm wide × 2.8 mm wide × 1.9 mm high.

  In the semiconductor light emitting device 20 according to the embodiment, the translucent resin can be formed of, for example, a silicone resin or an epoxy resin.

  In the semiconductor light emitting device 20 according to the embodiment, there may be a plurality of types of light emitting phosphors including the first light emitting phosphor 61 and the second light emitting phosphor 62.

  In the semiconductor light emitting device 20 according to the embodiment, the semiconductor light emitting element 30 may be formed of a blue LED formed of a nitride semiconductor. In this case, both the first light emitting phosphor 61 and the second light emitting phosphor 62 may be formed of a yellow phosphor. Alternatively, in order to ensure color rendering properties, the first light emitting phosphor 61 may be formed of a red phosphor, and the second light emitting phosphor 62 may be formed of a green phosphor.

Here, as a yellow phosphor using a blue LED as an excitation light source, for example, a Ce-doped YAG (Y ₃ Al ₅ O ₁₂ : Ce) phosphor, an Eu-added α-sialon (CaSiAlON: Eu), a silicate phosphor (( Sr, Ba, Ca, Mg) ₂ SiO ₄ : Eu) or the like can be used. That is, part of the blue light of the blue light emitting LED can be converted into yellow light emission by the yellow phosphor, and white light emission can be obtained by blue + yellow light emission.

Examples of the green phosphor using a blue LED as an excitation light source include Eu-added β-sialon (Si _6-z Al _z O _z N _8-z : Eu) phosphor, Ce-added CSSO (Ca ₃ Sc ₂ Si). _{A 3} O ₁₂ : Ce) phosphor or the like can be used.

In addition, as a red phosphor using a blue LED as an excitation light source, for example, an Eu-added CaAlSiN ₃ (CaAlSiN ₃ : Eu) phosphor can be used.

  Further, the semiconductor light emitting element 3 may be formed of an ultraviolet LED formed of a nitride semiconductor. In this case, both the first light emitting phosphor 61 and the second light emitting phosphor 62 may be formed of a yellow phosphor. Alternatively, in order to ensure color rendering, the first light emitting phosphor 61 may be formed of a blue phosphor, and the second light emitting phosphor 62 may be formed of a yellow phosphor.

  As the blue phosphor using the ultraviolet light LED as the excitation light source, any material that emits blue light upon receiving ultraviolet light may be used. For example, a halogenate phosphor, an aluminate phosphor, a silicate phosphor, etc. Can be mentioned. Examples of the activator include elements such as cerium, europium, manganese, gadolinium, samarium, terbium, tin, chromium, and antimony. Among these, europium is preferable. The addition amount of the activator is preferably in the range of 0.1 to 10 mol% with respect to the phosphor.

  The yellow phosphor using an ultraviolet LED as an excitation light source may be either a phosphor that absorbs blue light emission and emits yellow light, or a phosphor that absorbs ultraviolet light and emits yellow light. Here, in order to ensure color rendering properties, when the first light-emitting phosphor 61 is formed of a blue phosphor and the second light-emitting phosphor 62 is formed of a yellow phosphor, in order to further increase the light emission efficiency, ultraviolet rays are used. A phosphor that absorbs and emits yellow light is desirable. Examples of phosphors that absorb blue light emission and emit yellow light include organic phosphors such as allylsulfoamide / melamine formaldehyde co-condensed dyes and perylene phosphors, and inorganic phosphors include alumina. Examples thereof include acid salts, phosphates, and silicates. Among these, perylene phosphors and YAG phosphors are particularly preferable because they can be used for a long time. Examples of the activator include elements such as cerium, europium, manganese, gadolinium, samarium, terbium, tin, chromium, and antimony. Of these, cerium is preferred. The addition amount of the activator is preferably in the range of 0.1 to 10 mol% with respect to the phosphor. As a combination of the phosphor and the activator, a combination of YAG and cerium is preferable.

Examples of the phosphor that absorbs ultraviolet rays and emits yellow light include phosphors such as (La, Ce) (P, Si) O ₄ and (Zn, Mg) O. Examples of the activator include terbium and zinc.

  The contents of the first light-emitting phosphor 61 and the second light-emitting phosphor 62 in the phosphor layer 6 may be determined as appropriate based on the semiconductor light-emitting element 3 and the type of the phosphor. The range of 1 to 25 wt% with respect to the phosphor layer 6 is desirable for the body. A typical thermosetting temperature of the epoxy-based translucent resin is about 180 ° C., for example. The diameter of the light emitting phosphor is, for example, about 0.4 μm.

  According to the embodiment, a semiconductor light emitting device with improved heat dissipation characteristics can be provided.

(Production method)
In the manufacturing method of the semiconductor light emitting device according to the embodiment, the relationship between the heating temperature and time in the manufacturing process of forming the AuSn eutectic junction on the terminal electrode is schematically represented as shown in FIG. A schematic cross-sectional structure showing one step of the method for manufacturing the semiconductor light emitting device according to the embodiment is expressed as shown in FIGS.

  As shown in FIGS. 9 to 13, the method for manufacturing the semiconductor light emitting device according to the embodiment includes the step of forming the first terminal electrode 2 a and the second terminal electrode 2 k on the chip substrate 1, and the upper surface of the chip substrate 1. A step of forming the reflective case 5 so as to surround the outer edge, a step of bonding the semiconductor light emitting element 30 on the first terminal electrode 2a via the AuSn eutectic layer 10, and the surface of the semiconductor light emitting element 30 and the second terminal electrode. 2k, the bonding wire 4 is used for bonding connection, and the phosphor layer 6 is filled in the interior surrounded by the reflective case 5. Here, the phosphor layer 6 may be formed by mixing and dispersing the first light-emitting phosphor 61 and the second light-emitting phosphor 62 in a translucent resin.

(Heating process)
The step of bonding the semiconductor light emitting element 30 on the first terminal electrode 2a via the AuSn eutectic layer 10 is performed at a temperature within a first period from time t ₀ to time t ₁ as shown by a curve A in FIG. Increasing the temperature from the room temperature T ₃ to the first temperature T ₁ , maintaining the temperature at the first temperature T ₁ or more and the second temperature T ₂ or less within the second period from the time t ₁ to the time t ₂ , Dropping the temperature from the second temperature T ₂ to the room temperature T ₃ within a third period from time t ₂ to time t ₃ . Alternatively, as shown by a curve B in FIG. 9, a step of increasing the temperature from room temperature T ₃ to precure temperature T _p within a precure period from time t _p to time t ₀ and a _first from time t ₀ to time t ₁ . a step of raising the temperature within a period from the pre-curing temperature T _p up to the first temperature T ₁ of the first temperature above T ₁ second temperature T ₂ below the temperature in the second period from the time t ₁ the time t ₂ And a step of lowering the temperature from the second temperature T ₂ to the room temperature T ₃ within a third period from time t ₂ to time t ₃ . Here, the precure period from time t _p to time t ₀ is, for example, about 60 seconds, and the precure temperature T _p is, for example, about 200 ° C. As described above, in the heating step, both the temperature rising from the room temperature T ₃ and the one partially raising the temperature in advance (precure) can be performed. In FIG. 9, since the curve B and the curve A overlap in the second period from the time t ₁ to the time t ₂ and the third period from the time t ₂ to the time t ₃ , only the solid line is displayed. Yes.

Here, the first temperature T ₁ is 280 ° C. or higher, and the second temperature T ₂ is 320 ° C. or lower. The first temperature T ₁ is a temperature necessary for bonding the semiconductor light emitting element 30 to the first terminal electrode 2a via the AuSn eutectic layer 10. The first terminal electrode 2a is made of, for example, Ag / Cu, and an AuSn eutectic layer 10 is formed between the Ag / Cu and the sapphire substrate of the semiconductor light emitting element 30 by AuSn solder to form a bond. To do.

In addition, since the reflective case 5 is formed of resin, the second temperature T ₂ is desirably 320 ° C. or lower in consideration of the heat resistance of the resin layer.

By maintaining the temperature between the first temperature T _{1 and} the second temperature T ₂ within the second period from the time t ₁ to the time t ₂ , good AuSn coexistence between the semiconductor light emitting element 30 and the first terminal electrode 2a is obtained. In order to form the crystal layer 10, the first temperature T ₁ may be 280 ° C. or higher and the second temperature T ₂ may be 290 ° C. or lower.

  In addition, the first period, the second period, and the third period are about 60 seconds, and it is an experiment that an excellent AuSn eutectic layer 10 can be formed between the semiconductor light emitting element 30 and the first terminal electrode 2a. Has been confirmed. Further, the first period, the second period, and the third period are preferably about 60 seconds from the viewpoint of ensuring the heat resistance of the reflective case 5 because they are formed of a resin layer.

  Further, the step of forming the AuSn eutectic layer 10 on the first terminal electrode 2a and bonding the semiconductor light emitting element 30 may be performed in a nitrogen atmosphere. This step can be performed under atmospheric pressure.

  Hereinafter, a method for manufacturing a semiconductor light emitting device according to an embodiment will be described in detail with reference to the drawings.

(A) First, as shown in FIG. 10, after forming the first terminal electrode 2 a and the second terminal electrode 2 k on the chip substrate 1, the reflection case 5 is formed so as to surround the outer edge of the upper surface of the chip substrate 1.

(B) Next, as shown in FIG. 11, the semiconductor light emitting element 30 is bonded to the first terminal electrode 2a via the AuSn eutectic layer 10 (die bonding step).

(B-1) In this die bonding step, first, in the state shown in FIG. 10, the precure step is performed by heating in an oven at about 100 ° C. for about 5 minutes.

(B-2) Next, the semiconductor light emitting element 30 is arranged on the AuSn solder layer together with the flux, and the above heating process is performed at about 300 ° C., so that the semiconductor light emitting element 30 and the first terminal electrode 2a are in good condition. An AuSn eutectic layer 10 is formed.

(B-3) After the heating step, the flux is washed and then dried.

(C) Next, as shown in FIG. 12, for example, after performing a plasma cleaning process, the surface of the semiconductor light emitting element 30 and the second terminal electrode 2k are connected using the bonding wire 4.

(D) Next, after performing the baking process before injection | pouring of the fluorescent substance layer 6, the fluorescent substance layer 6 is filled into the inside enclosed by the reflective case 5. FIG. Here, the phosphor layer 6 may be formed by mixing and dispersing the first light-emitting phosphor 61 and the second light-emitting phosphor 62 in a translucent resin.

(E) Next, a curing process for thermosetting the translucent resin is performed to complete the semiconductor light emitting device 20 shown in FIG.

  According to the embodiment, a good AuSn eutectic layer 10 can be formed between the semiconductor light emitting element 30 and the first terminal electrode 2a by devising the heating time and the heating temperature in the heating step. For this reason, the reliability at the time of manufacture can be improved.

  ADVANTAGE OF THE INVENTION According to this invention, the reliability at the time of manufacture can be provided, and the semiconductor light-emitting device which improved the thermal radiation characteristic, and its manufacturing method can be provided.

(Other embodiments)
As described above, the embodiments have been described. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  Moreover, as a configuration of the LED of the semiconductor light emitting element 30, for example, a “blue LED + green LED + red LED” can be accommodated in one package to configure a white LED. As an example of such a multi-chip, a phosphor that emits yellow light by blue light excitation in a multi-chip of “infrared LED + blue LED” can be combined. Since the yellow phosphor is not affected by infrared light, it can be configured in one small package, can occupy a small space, and can be mounted in a small space.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

  The semiconductor light emitting device of the present invention is a general LED lighting device such as general lighting, road lighting, task lighting, accent lighting, stair light, flashlight, guide light, traffic signal light, automobile electrical equipment, automobile headlight, large liquid crystal backlight, etc. It is applicable to.

DESCRIPTION OF SYMBOLS 1 ... Chip substrate 2a, 2k ... Terminal electrode 4 ... Bonding wire 5 ... Reflection case 6 ... Phosphor layer 10 ... AuSn eutectic layer 20 ... Semiconductor light emitting device 30 ... Semiconductor light emitting element 61 ... 1st light emission fluorescent substance 62 ... 2nd Luminescent phosphor

Claims (13)

A chip substrate;
A first terminal electrode and a second terminal electrode disposed on the chip substrate;
A reflective case disposed so as to surround an outer edge of the upper surface of the chip substrate;
A semiconductor light emitting device disposed on the first terminal electrode via an AuSn eutectic layer;
A bonding wire connecting the semiconductor light emitting element and the second terminal electrode;
A semiconductor light emitting device comprising: a phosphor layer disposed inside the reflection case and having a light emitting phosphor mixed and dispersed in a translucent resin.   The semiconductor light-emitting device according to claim 1, wherein the light-emitting phosphor includes a plurality of types.   The phosphor layer is disposed inside the reflective case, and includes the first terminal electrode and the second terminal electrode, the AuSn eutectic layer 10, the semiconductor light emitting element, and the bonding wire. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is sealed.   The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting element is formed of a nitride-based semiconductor.   5. The semiconductor light emitting device according to claim 1, wherein a thermal resistance between the junction of the semiconductor light emitting element and the solder mounting portion is 55 ° C./W or less.   The semiconductor light emitting device according to claim 1, wherein a thermal resistance between the junction of the semiconductor light emitting element and the ambient atmosphere is 90 ° C./W or less. Forming a first terminal electrode and a second terminal electrode on the chip substrate;
Forming a reflective case so as to surround the outer edge of the upper surface of the chip substrate;
Bonding a semiconductor light emitting element on the first terminal electrode through an AuSn eutectic layer;
Bonding the semiconductor light emitting element and the second terminal electrode using a bonding wire;
Filling a phosphor layer in which a light-emitting phosphor is mixed and dispersed in a light-transmitting resin in an interior surrounded by the reflection case. The step of bonding the semiconductor light emitting device on the first terminal electrode through the AuSn eutectic layer includes:
Increasing the temperature to a first temperature within a first period from time t ₀ to time t ₁ ;
Maintaining the temperature between the first temperature and the second temperature within a second period from time t ₁ to time t ₂ ;
The method of manufacturing a semiconductor light-emitting device according to claim 7, further comprising: lowering the temperature from the second temperature to room temperature within a third period from time t ₂ to time t ₃ .   The method of manufacturing a semiconductor light emitting device according to claim 8, wherein the first temperature is 280 ° C. or higher.   The method of manufacturing a semiconductor light emitting device according to claim 8, wherein the second temperature is 320 ° C. or lower.   11. The method of manufacturing a semiconductor light emitting device according to claim 8, wherein the first period, the second period, and the third period are 60 seconds.   12. The semiconductor light-emitting device according to claim 8, wherein the step of bonding the semiconductor light-emitting element to the first terminal electrode through an AuSn eutectic layer is performed in a nitrogen atmosphere. Device manufacturing method.   The method of manufacturing a semiconductor light emitting device according to claim 12, wherein the step of bonding the semiconductor light emitting element on the first terminal electrode through the AuSn eutectic layer is performed at atmospheric pressure.

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