JP2013109907A - Phosphor substrate and display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a phosphor substrate including a barrier having high aspect ratio and high definition.SOLUTION: A phosphor substrate 1 of the present invention includes: a substrate 2; phosphor layers 3R, 3G, 3B provided on the substrate 2 and emitting light by incident excitation light; and a barrier 4 surrounding each side face of the phosphor layers. The substrate includes a first region M1 having the phosphor layers 3R, 3G, 3B and the barrier 4, and a second region M2 located at an outside of the first region M1. In the second region M2, a structure 5 formed of the whole or a part of a member constituting the barrier 4 formed in the first region M1 is provided, and the barrier 4 and at least a part of the structure 5 form a continuous body.

Description

  The present invention relates to a phosphor substrate and a display device.

  In recent years, there has been an increasing need for a display device using a thin flat panel display (FPD) from a display device using a cathode ray tube, which has been the mainstream in the past. There are various types of FPD. For example, a non-self-luminous liquid crystal display (LCD), a self-luminous plasma display panel (PDP), an inorganic electroluminescence (inorganic EL) display, an organic electroluminescence (organic EL) display, or the like is known.

  Among them, the organic EL display has a thin and lightweight element (organic EL element) used for display, and has characteristics such as low voltage driving, high luminance, and self-light emission. For this reason, research and development is actively conducted. Recently, application of organic EL elements to light sources such as electrophotographic copying machines or printers or light emission is expected. When an organic EL element is used for light emission, the organic EL element has surface emission, has high color rendering properties, and has an advantage that light control is easy. Furthermore, fluorescent lamps contain mercury, but organic EL elements do not contain mercury, and there are many advantages such as that the organic EL elements do not contain ultraviolet rays.

In an organic EL display, a technique for displaying a moving image by simple matrix driving or a technique for displaying a moving image by active matrix driving of an organic EL element using a thin film transistor (TFT) is known.
Further, in a conventional display, pixels that emit red, green, and blue light are juxtaposed as one display unit, and full color is achieved by creating various colors typified by white.

  In order to realize this, in the case of organic EL, red, green, and blue pixels are formed by coating the organic light emitting layer by a mask vapor deposition method using a shadow mask. However, in this method, mask processing accuracy, mask alignment accuracy, mask size increase, and the like are significant issues. In particular, in the field of large displays typified by TV, the substrate size is increasing from G6 to G8, G10. Since the conventional method requires a mask that is equal to or larger than the substrate size, it is necessary to manufacture and process a mask corresponding to a large substrate. Since a very thin metal (general film thickness: 50 to 100 nm) is used for the mask, it is very difficult to increase the size. In addition, production and processing of a mask corresponding to a large substrate becomes a problem.

  A decrease in mask processing accuracy and mask alignment accuracy causes color mixing due to mixing of the light emitting layers. In order to prevent this problem, it is necessary to make the width of the insulating layer provided between the pixels wider than usual. However, if the area of the pixel is constant and the width of the insulating layer is increased, the area of the non-light emitting portion is reduced, that is, the aperture ratio of the pixel is reduced, the luminance is reduced, the power consumption is increased, and the lifetime is decreased. It leads to.

  Moreover, in the conventional manufacturing method, a vapor deposition source is arrange | positioned below a board | substrate, and an organic material is formed into a film by scattering and vapor-depositing organic material toward the upper direction from the downward direction. Therefore, as the substrate becomes larger (the mask becomes larger), the bending of the mask at the center becomes a problem. Here, the problem of bending also causes the above color mixture. In an extreme case, a portion where the organic layer is not formed is formed, resulting in a defect due to leakage between the upper and lower electrodes. Further, in the conventional method, the mask becomes unusable because the mask deteriorates after a specific number of uses. Therefore, an increase in the size of the mask leads to an increase in display cost. In particular, the cost problem is regarded as the biggest problem in organic EL displays.

  In order to solve this problem, an organic EL having a light emitting layer that emits blue to blue-green light, and a phosphor layer that emits green light by absorbing blue to blue-green light emitted from the organic EL as excitation light. There has been proposed a method for performing full-color display by combining a green pixel, a red pixel composed of a phosphor layer emitting red light, and a blue pixel composed of a blue color filter for the purpose of improving color purity. (See, for example, Patent Document 1 below). This method is superior to the above-described coating method in terms of cost because it does not require patterning of the organic layer and can be easily manufactured.

  A self-luminous liquid crystal display device combining a conventional liquid crystal display device and a phosphor has also been proposed. Unlike conventional liquid crystal display devices, the red, green, and blue phosphor layers provided on the outer side of the liquid crystal layer emit light, so that it is possible to realize a display device with excellent viewing angle characteristics. (For example, refer to Patent Document 2 and Non-Patent Document 1).

  These phosphor substrates are often provided with a barrier for partitioning adjacent phosphor layers. The barrier mainly plays a role of preventing light bleeding between the phosphor layers and preventing ink bleeding when the phosphor layer is formed by a wet process such as inkjet. However, when the barrier has a high aspect ratio and high definition, there is a problem that the barrier is twisted or the barrier is peeled off from the substrate. For this type of problem, for example, Patent Document 3 proposes a method of forming a barrier in a specific shape.

Japanese Patent No. 2795932 JP 2000-131683 A Japanese Patent No. 3440768

IDW'09, p. 1001 (2009)

  However, since the degree of freedom of the shape of the barrier is limited in the method of Patent Document 3, it is difficult to cope with an inversely tapered shape in which the upper surface width of the barrier is wider than the lower surface width, for example. In addition, in order to form a barrier having a specific shape, it is necessary to select conditions for material selection and material composition, which is complicated. Furthermore, there is a problem that even if the performance of the barrier such as light reflectance is high, a specific shape cannot be obtained, so that it cannot be used. As a result, there is a problem in that an inferior performance barrier must be adopted, and the performance of the display such as power consumption is extremely reduced.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a phosphor substrate having a high aspect ratio and a high-definition barrier regardless of the material and shape to be used. . In addition, by combining this phosphor substrate with an organic EL element or a liquid crystal element, it is possible to obtain an excellent image having excellent viewing angle characteristics, that is, color purity and luminance are not shifted regardless of the viewing angle, and low It is an object of the present invention to provide a display device capable of reducing cost and reducing power consumption.

  In order to achieve the above object, a phosphor substrate of the present invention includes a substrate, a phosphor layer that is provided on the substrate and emits light by incident excitation light, and a barrier that surrounds a side surface of the phosphor layer. And the substrate includes a first region having the phosphor and the barrier, and a second region located outside the first region, and the second region includes: A structure formed by all members or a part of members constituting the barrier formed in the first region is provided, and the barrier and at least a part of the structure form a continuous body. It is characterized by.

  In the phosphor substrate of the present invention, the phosphor layer includes a plurality of phosphor layers that emit light of different colors, and the barrier is provided on each side surface of the plurality of phosphor layers. Features.

  The phosphor substrate of the present invention is characterized in that the structure is formed with the same width as the barrier formed in the first region.

  The phosphor substrate according to the present invention is characterized in that at least a part of the structure is formed with a width larger than a barrier formed in the first region.

  The phosphor substrate of the present invention is characterized in that the structure is formed without gaps over the entire second region.

  The phosphor substrate of the present invention is characterized in that the barrier has at least one of light scattering and light reflecting properties.

  The phosphor substrate of the present invention is characterized in that a light shielding layer is provided in a region surrounded by the structure in the second region.

  The display device of the present invention includes the phosphor substrate of the present invention, and a light source having a light emitting element that emits excitation light that irradiates the phosphor layer.

  The display device of the present invention includes a plurality of pixels including at least a red pixel that performs display using red light, a green pixel that performs display using green light, and a blue pixel that performs display using blue light. Ultraviolet light is emitted as the excitation light, and as the phosphor layer, a red phosphor layer that emits red light using the ultraviolet light as the excitation light is provided in the red pixel, and the ultraviolet light is emitted to the green pixel. A green phosphor layer that emits green light as excitation light is provided, and a blue phosphor layer that emits blue light using the ultraviolet light as the excitation light is provided in the blue pixel.

  The display device of the present invention includes a plurality of pixels including at least a red pixel that performs display using red light, a green pixel that performs display using green light, and a blue pixel that performs display using blue light. Blue light is emitted as the excitation light, and as the phosphor layer, a red phosphor layer that emits red light using the blue light as the excitation light is provided in the red pixel, and the blue light is emitted to the green pixel. A green phosphor layer that emits green light as excitation light is provided, and a scattering layer that scatters the blue light is provided in the blue pixel.

  In the display device of the present invention, the light source includes a plurality of light emitting elements provided corresponding to the plurality of pixels, and a plurality of driving elements that respectively drive the plurality of light emitting elements. It is characterized by being a light source.

  The display device of the present invention is characterized in that the light source is any one of a light emitting diode, an organic electroluminescent element, and an inorganic electroluminescent element.

  In the display device of the present invention, the light source is a planar light source that emits light from a light emitting surface, and is emitted from the planar light source for each pixel between the planar light source and the phosphor substrate. A liquid crystal element capable of controlling the light transmittance is provided.

  The display device of the present invention is characterized in that the light source has directivity.

  ADVANTAGE OF THE INVENTION According to this invention, the phosphor substrate provided with the high aspect ratio and the high-definition barrier can be provided. Also, it is possible to provide a display device that is excellent in viewing angle characteristics, that is, can obtain a good image that does not shift in color purity and luminance regardless of the viewing angle, and that can be reduced in cost and power consumption. Can do.

(A) It is sectional drawing which shows the phosphor substrate of 1st Embodiment, (B) It is a top view which shows the phosphor substrate of 1st Embodiment. (A) It is sectional drawing which shows the phosphor substrate of 2nd Embodiment, (B) It is a top view which shows the phosphor substrate of 2nd Embodiment. (A) It is sectional drawing which shows the phosphor substrate of 3rd Embodiment, (B) It is a top view which shows the phosphor substrate of 3rd Embodiment. (A) It is sectional drawing which shows the phosphor substrate of 4th Embodiment, (B) It is a top view which shows the phosphor substrate of 4th Embodiment. (A) It is sectional drawing which shows the phosphor substrate of 5th Embodiment, (B) It is a top view which shows the phosphor substrate of 5th Embodiment. (A) It is sectional drawing which shows the phosphor substrate of 6th Embodiment, (B) It is a top view which shows the phosphor substrate of 6th Embodiment. (A) It is sectional drawing which shows the phosphor substrate of 7th Embodiment, (B) It is a top view which shows the phosphor substrate of 7th Embodiment. (A) It is sectional drawing which shows the phosphor substrate of 8th Embodiment, (B) It is a top view which shows the phosphor substrate of 8th Embodiment. (A) It is a top view which shows the structure in the fluorescent substance substrate of 8th Embodiment, (B) It is a top view which shows the modification of a structure, (C) The top view which shows the other modification of a structure (D) It is a top view which shows the other modification of a structure. FIG. 3 is a cross-sectional view showing a display device of a first configuration example. FIG. 3 is a plan view showing an overall configuration of a display device of a first configuration example. FIG. 6 is an equivalent circuit diagram of one pixel in the display device of the first configuration example. It is sectional drawing which shows the display apparatus of the 2nd structural example. It is a front view which shows an example of the electronic device provided with the display apparatus of this invention. It is a front view which shows the other example of the electronic device provided with the display apparatus of this invention. (A)-(C) is process drawing which shows the cross-sectional structure of the barrier pattern board | substrate of the comparative example 1. FIG. (A)-(C) are process drawings which show the planar structure of the barrier pattern board | substrate of the comparative example 1. FIG. (A) It is sectional drawing which shows the barrier substrate of Example 1, (B) It is a top view which shows the barrier substrate of Example 1. (A) It is sectional drawing which shows the barrier substrate of Example 3, (B) It is a top view which shows the barrier substrate of Example 3. (A) It is sectional drawing which shows the barrier substrate of Example 4, (B) It is a top view which shows the barrier substrate of Example 4. (A) It is sectional drawing which shows the barrier substrate of Example 6, (B) It is a top view which shows the barrier substrate of Example 6. (A) It is sectional drawing which shows the conventional phosphor substrate, (B) It is a top view which shows the conventional phosphor substrate. (A) It is sectional drawing which shows the conventional barrier substrate, (B) It is a top view which shows the conventional barrier substrate.

  The inventors of the present invention have examined the conventional problems, and in the region where the barrier pattern is formed, the degree of twisting of the barrier increases toward the end of the region, while the region moves toward the center of the region. I discovered that the degree of barrier swaying became smaller. As a result of diligent efforts paying attention to this discovery, the present inventors have realized that a method capable of providing a phosphor substrate having a high aspect ratio and a high-definition barrier can be realized and the above-described problems can be solved. And the present invention has been reached. The “barrier aspect ratio” referred to in the present specification is the ratio of the barrier height to the barrier width.

  That is, the present invention includes a substrate, a phosphor layer that is provided on the substrate and emits light by incident excitation light, and a barrier that surrounds a side surface of the phosphor layer, and the substrate includes the phosphor. And a first region having the barrier, and a second region located outside the first region, wherein the second region includes a barrier formed in the first region. The phosphor substrate is characterized in that a structure formed of all members or a part of the members is provided, and the barrier and at least a part of the structure form a continuous body.

  Thereby, the stress concerning the barrier formed in the 1st field can be effectively distributed to the structure formed in the 2nd field which has constituted the barrier and a continuum. As a result, since the stress applied to the barrier in the first region is reduced, the barrier in the first region can be prevented from being twisted or peeled off. In addition, even if a twist occurs in a part of the structure formed in the second region (particularly, the outer end portion of the second region), the second region hits the peripheral edge of the substrate, and the display itself emits light. There is no contribution to the ingredients. Therefore, the twist of the structure in the second region does not give up the performance of the display. Moreover, since the structure is formed of all or part of the members constituting the barrier, the barrier and the structure can be formed at the same time, which is efficient.

The present invention is characterized in that the structure has a width similar to that of the barrier formed in the first region.
In this configuration, for example, when the barrier and the structure are formed by a photolithography technique, the barrier pattern and the structure pattern are common. Therefore, the structure can be patterned using the photomask used for patterning the barrier. Therefore, an effect that only one photomask is required is produced.

The present invention is characterized in that at least a part of the structure is formed with a width larger than a barrier formed in the first region.
Thereby, more stress applied to the barrier in the first region can be dispersed in the structure in the second region. Therefore, the stress applied to the barrier in the first region can be further reduced. As a result, a high-definition barrier with a higher aspect ratio can be formed without distortion.

The present invention is characterized in that the structure is formed without gaps over the entire second region.
By forming the structure in the entire second region without a gap (in a solid shape), the notch effect when the structure is patterned disappears. For this reason, it becomes possible to form a high-definition barrier with a higher aspect ratio without distortion.
The “notch effect” as used in this specification is a phenomenon in which a very large stress is generated at the patterning edge (notch) of the structure when stress acts on the structure.

The present invention is characterized in that the barrier has at least one of a light scattering property and a light reflecting property.
As a result, it is possible to improve the light extraction efficiency to the front by scattering and reflecting the light emitting component directed from the phosphor layer to the side by the barrier and returning it to the inside of the phosphor layer. As a result, the power consumption of the display can be reduced.

  Hereinafter, although an embodiment and an example are given and the present invention is explained still in detail, the present invention is not limited to these embodiments and an example.

[First Embodiment]
Hereinafter, the phosphor substrate according to the first embodiment of the present invention will be described with reference to FIGS.
FIG. 1A is a cross-sectional view of the phosphor substrate according to the present embodiment taken along line AA ′ of FIG. 1B, and FIG. 1B is a plan view of the phosphor substrate according to the present embodiment. is there.
In the following drawings, in order to make each component easy to see, the scale of dimensions may be different depending on the component.

  The phosphor substrate 1 according to the present embodiment includes a substrate 2, a phosphor layer 3R, 3G, 3B that is provided on the substrate 2 and emits light by incident excitation light, and side surfaces of the phosphor layers 3R, 3G, 3B. And a barrier 4 surrounding the. The substrate 2 includes a first region M1 having phosphor layers 3R, 3G, and 3B and a barrier 4, and a second region M2 located outside the first region M1. The second region M2 is provided with a structure 5 formed of all members or a part of members constituting the barrier 4 formed in the first region M1. The barrier 4 and at least a part of the structure 5 form a continuum.

  As shown in FIGS. 1A and 1B, in the phosphor substrate 1, a plurality of barriers 4 are formed at predetermined intervals in a first region M1 corresponding to the central portion of the phosphor substrate 1. The plurality of barriers 4 include a first barrier 4A disposed in a horizontal direction parallel to each other at a predetermined interval, and a second barrier 4B disposed in a vertical direction parallel to each other at a predetermined interval. The phosphor layers 3R, 3G, and 3B are disposed in a space surrounded by the adjacent first barrier 4A and the adjacent second barrier 4B. A plurality of structures 5 are formed in a second region M2 that surrounds the first region M1. The structure 5 is composed of the same member as the barrier 4 and forms a continuous body with the barrier 4. In the present embodiment, the structure 5 is formed with the same width as the barrier 4 formed in the first region M1.

  In the case of the present embodiment, assuming that ultraviolet light is irradiated as excitation light, the phosphor layer is a red phosphor layer 3R that emits red light using ultraviolet light as excitation light, and ultraviolet light as excitation light. A green phosphor layer 3G that emits green light and a blue phosphor layer 3B that emits blue light using ultraviolet light as excitation light are provided. The phosphor layers 3R, 3G, and 3B emitting the same color light are arranged along the extending direction of the second barrier 4B, and the phosphor layers 3R, 3G, and 3B emitting the different color light are the first barrier 4A. Are arranged along the extending direction. The excitation light is incident on the phosphor substrate 1 from the side where the barrier 4 is formed, is color-converted by the phosphor layers 3R, 3G, and 3B, and then is extracted from the substrate 2.

  A space surrounded by the adjacent first barrier 4A and the adjacent second barrier 4B corresponds to a pixel which is the minimum display unit of an image when the phosphor substrate 1 and the light source are combined to form a display device. To do. Therefore, the region where the red phosphor layer 3R is disposed corresponds to a red pixel on which display with red light is performed. Similarly, the region where the green phosphor layer 3G is disposed corresponds to a green pixel on which display with green light is performed. The region where the blue phosphor layer 3B is disposed corresponds to a blue pixel on which display with blue light is performed. In FIG. 1B, for the sake of illustration, three red phosphor layers 3R, three green phosphor layers 3G, and three blue phosphor layers arranged in a matrix in the horizontal and vertical directions. Only 3B is shown. However, in the actual phosphor substrate 1, a larger number of red phosphor layers 3R, green phosphor layers 3G, and blue phosphor layers 3B are arranged.

  As shown in FIGS. 22A and 22B, in the conventional phosphor substrate 201, the barrier 204 is usually provided only in the region where the phosphor layers 203R, 203G, and 203B are formed on the substrate 202. there were. Here, when the aspect ratio of the barrier 204 is increased, in the conventional phosphor substrate 201, as shown in FIGS. 23 (A) and (B), outside the formation region of the phosphor layers 203R, 203G, and 203B. Since the barrier 204 does not exist, the stress of the barrier 204 causes the barrier 204 to be twisted or peeled off.

  On the other hand, in this embodiment, as shown in FIGS. 1A and 1B, the structure 5 that forms a continuum with the barrier 4 in the first region M1 is formed in the second region M2. Therefore, the stress applied to the barrier 4 in the first region M1 can be dispersed in the structure in the second region. As a result, even if the structure 5 in the second region M2 is twisted or peeled off, it is possible to effectively prevent the barrier 4 in the first region M1 from being twisted or peeled off.

Hereinafter, although the structural member and the formation method of the fluorescent substance substrate 1 which concern on this invention are demonstrated concretely, this invention is not limited to the structural member and formation method which are mentioned later.
[substrate]
As the substrate 2 for the phosphor substrate 1 used in this embodiment, it is necessary to extract light emitted from the phosphor layers 3R, 3G, and 3B to the outside. Therefore, it is necessary to transmit light in the light emitting region of the phosphor. is there. For example, an inorganic material substrate made of glass, quartz or the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, or the like can be given. However, it is not limited to these substrates. From the viewpoint that the curved portion and the bent portion can be formed without stress, it is preferable to use a plastic substrate. Furthermore, from the viewpoint of improving gas barrier properties, a substrate in which a plastic substrate is coated with an inorganic material is more preferable.

[Phosphor layer]
The phosphor layers 3R, 3G, and 3B of the present embodiment absorb excitation light from excitation light sources such as an ultraviolet light emitting organic EL element, a blue light emitting organic EL element, an ultraviolet light emitting LED, and a blue LED, and red light, green light, It is composed of a red phosphor layer 3R that emits blue light, a green phosphor layer 3G, a blue phosphor layer 3B, and the like. However, when blue light is applied as the excitation light source, the blue phosphor layer 3B is not provided, and the blue excitation light may be emitted from the blue pixel portion as it is. When blue light emission having directivity is used as the excitation light source, a light scattering layer that can scatter excitation light having the directivity and extract it as isotropic light emission instead of the blue phosphor layer 3B. May be used. By doing so, it is possible to match the light distribution characteristics of the light emitted from the phosphor layer and the light distribution characteristics of the blue light from the light scattering layer, and display with excellent viewing angle characteristics can be performed. In addition, when the light emission from the phosphor layer is not isotropic light emission, the light distribution characteristic from the light scattering layer is adjusted to the light distribution characteristic of the light emission from the phosphor layer by adjusting the material forming the light scattering layer. be able to.

  If necessary, it is preferable to add phosphors emitting cyan and yellow to the pixels. Here, by setting the color purity of each pixel emitting light to cyan and yellow outside the triangle connected by the color purity points of red, green, and blue light emitting pixels on the chromaticity diagram, red, The color reproduction range can be expanded as compared with a display device using pixels that emit light of three primary colors of green and blue.

The phosphor layers 3R, 3G, and 3B may be composed only of the phosphor materials exemplified below. Further, the phosphor layers 3R, 3G, and 3B may optionally contain additives and the like, and may be configured such that these materials are dispersed in a polymer material (binding resin) or an inorganic material. .
A known phosphor material can be used as the phosphor material of the present embodiment. Such phosphor materials are classified into organic phosphor materials and inorganic phosphor materials. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials. .

  Organic fluorescent materials include blue fluorescent dyes, stilbenzene dyes: 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstilbenzene, coumarin dyes: 7-hydroxy- 4-methyl coumarin etc. are mentioned. As green fluorescent dyes, coumarin dyes: 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh) coumarin (coumarin 153), 3- (2 ′ -Benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2'-benzimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7), naphthalimide dyes: basic yellow 51, solvent yellow 11, solvent yellow 116 or the like. As the red fluorescent dye, cyanine dye: 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran, pyridine dye: 1-ethyl-2- [4- (p- Dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perchlorate and rhodamine dyes: rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101 and the like.

Inorganic phosphor materials include blue phosphors such as Sr ₂ P ₂ O ₇ : Sn ⁴⁺ , Sr ₄ Al ₁₄ O ₂₅ : Eu ²⁺ , BaMgAl ₁₀ O ₁₇ : Eu ²⁺ , SrGa ₂ S ₄ : Ce. ³⁺ , CaGa ₂ S ₄ : Ce ³⁺ , (Ba, Sr) (Mg, Mn) Al ₁₀ O ₁₇ : Eu ²⁺ , (Sr, Ca, Ba ₂ , 0 Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu ²⁺ , BaAl ₂ SiO ₈ : Eu ²⁺ , Sr ₂ P ₂ O ₇ : Eu ²⁺ , Sr ₅ (PO ₄ ) ₃ Cl: Eu ²⁺ , (Sr, Ca, Ba) ₅ (PO ₄ ) ₃ Cl: Eu ²⁺ , BaMg ₂ Al ₁₆ O ₂₇ : Eu ²⁺ , (Ba, Ca) ₅ (PO ₄ ) ₃ Cl: Eu ²⁺ , Ba ₃ MgSi ₂ O ₈ : Eu ²⁺ , Sr ₃ MgSi ₂ Examples include O ₈ : Eu ²⁺ . As the green phosphor, (BaMg) Al ₁₆ O ₂₇ : Eu ²⁺ , Mn ²⁺ , Sr ₄ Al ₁₄ O ₂₅ : Eu ²⁺ , (SrBa) Al ₁₂ Si ₂ O ₈ : Eu ²⁺ , (BaMg) ₂ SiO ₄ : Eu ²⁺ , Y ₂ SiO ₅ : Ce ³⁺ , Tb ³⁺ , Sr ₂ P ₂ O ₇ —Sr ₂ B ₂ O ₅ : Eu ²⁺ , (BaCaMg) ₅ (PO ₄ ) ₃ Cl: Eu ^{_{2+, Sr 2 Si 3 O 8}} -2SrCl 2: Eu 2+, Zr 2 SiO 4, MgAl 11 O 19: Ce 3+, Tb 3+, Ba 2 SiO 4: Eu 2+, Sr 2 SiO 4: Eu ²⁺ , (BaSr) SiO ₄ : Eu ^{2+ and the} like. As red phosphors, Y ₂ O ₂ S: Eu ³⁺ , YAlO ₃ : Eu ³⁺ , Ca ₂ Y ₂ (SiO ₄ ) ₆ : Eu ³⁺ , LiY ₉ (SiO ₄ ) ₆ O ₂ : Eu ³⁺ YVO ₄ : Eu ³⁺ , CaS: Eu ³⁺ , Gd ₂ O ₃ : Eu ³⁺ , Gd ₂ O ₂ S: Eu ³⁺ , Y (P, V) O ₄ : Eu ³⁺ , Mg ₄ GeO _5.5 F: Mn ⁴⁺ , Mg ₄ GeO ₆ : Mn ⁴⁺ , K ₅ Eu _2.5 (WO ₄ ) _6.25 , Na ₅ Eu _2.5 (WO ₄ ) _6.25 , K ₅ Eu _2.5 (MoO ₄ ) _6.25 , Na ₅ Eu _2.5 ( MoO ₄ ) _{6.25 and the} like.

  The inorganic phosphor may be subjected to surface modification treatment as necessary. Examples of the surface modification treatment include chemical treatment using a silane coupling agent, physical treatment using addition of submicron-order fine particles, and combinations thereof. In consideration of stability such as deterioration due to excitation light and deterioration due to light emission, it is preferable to use an inorganic material. Furthermore, when using an inorganic material, it is preferable that the average particle diameter (d50) of an inorganic material is 0.5-50 micrometers. If the average particle size of the inorganic material is 0.5 μm or less, the luminous efficiency of the phosphor is drastically reduced. When the average particle size of the inorganic material is 50 μm or more, it becomes difficult to pattern with high resolution.

  The phosphor layers 3R, 3G, and 3B are formed by using a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent, using a spin coating method, a dipping method, a doctor blade method, and a discharge coating. It can be formed by a known wet process such as a coating method such as a coating method, a spray coating method, an ink jet method, a relief printing method, an intaglio printing method, a screen printing method, a micro gravure coating method, or the like. Alternatively, a known dry process such as a resistance heating vapor deposition method, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor deposition (OVPD) method, or the like, or It can be formed by a laser transfer method or the like.

The phosphor layers 3R, 3G, and 3B can be patterned by a photolithography method using a photosensitive resin as the polymer material.
Here, as the photosensitive resin, a photosensitive resin (photocurable resist material) having a reactive vinyl group such as an acrylic acid resin, a methacrylic acid resin, a polyvinyl cinnamate resin, or a hard rubber resin is used. It is possible to use one kind or a mixture of several kinds. In addition, wet processes such as inkjet printing, letterpress printing, intaglio printing, and screen printing, resistance heating vapor deposition using a shadow mask, electron beam (EB) vapor deposition, molecular beam epitaxy (MBE), sputtering, It is also possible to directly pattern the phosphor material by a known dry process such as an organic vapor deposition (OVPD) method or a laser transfer method.

  The film thickness of the phosphor layers 3R, 3G, and 3B is generally about 100 nm to 100 μm, but preferably 1 to 100 μm. If the phosphor layers 3R, 3G, and 3B have a film thickness of less than 100 nm, the light from the excitation light source cannot be sufficiently absorbed, and the luminous efficiency is reduced. The transmitted light of the excitation light is mixed with the required color. There arises a problem that the color purity is deteriorated. Furthermore, in order to increase the absorption of light emitted from the excitation light source and reduce the transmitted light of the excitation light to the extent that the color purity is not adversely affected, the thickness of the phosphor layer is preferably 1 μm or more. If the thickness of the phosphor layer exceeds 100 μm, the light from the excitation light source is already sufficiently absorbed, so that the efficiency is not increased, the material is consumed only, and the material cost is increased.

  When using blue light as excitation light, when a light scattering layer is applied instead of a blue phosphor layer, the light scattering particles may be composed of either an organic material or an inorganic material, but are composed of an inorganic material. It is preferable. Thereby, it becomes possible to diffuse or scatter excitation light having directivity more isotropically and effectively. Further, by using an inorganic material, it is possible to provide a light scattering layer that is stable to light and heat.

  It is preferable that the light scattering particles have high transparency. In addition, the light scattering layer is preferably a layer in which fine particles having a higher refractive index than the base material are dispersed in a low refractive index base material. Further, in order for blue light to be effectively scattered by the light scattering layer, it is necessary that the particle size of the light scattering particles is in the Mie scattering region. Therefore, the particle size of the light scattering particles is preferably about 100 nm to 500 nm. In addition, when the light scattering particles are used by mixing with a resin material, the refractive index ratio with the resin material is preferably included in the above-described numerical range.

  When an inorganic material is used as the light scattering particle, for example, the main component is an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, and antimony. Examples thereof include particles (fine particles). When particles (inorganic fine particles) made of an inorganic material are used as the light scattering particles, for example, silica beads (refractive index: 1.44), alumina beads (refractive index: 1.63), titanium oxide beads ( Refractive index Anatase type: 2.50, rutile type: 2.70), zirconia bead (refractive index: 2.05), zinc oxide bead (refractive index: 2.00) and the like.

  When particles (organic fine particles) made of an organic material are used as the light scattering particles, for example, polymethyl methacrylate beads (refractive index: 1.49), acrylic beads (refractive index: 1.50), acrylic- Styrene copolymer beads (refractive index: 1.54), melamine beads (refractive index: 1.57), high refractive index melamine beads (refractive index: 1.65), polycarbonate beads (refractive index: 1.57), Styrene beads (refractive index: 1.60), crosslinked polystyrene beads (refractive index: 1.61), polyvinyl chloride beads (refractive index: 1.60), benzoguanamine-melamine formaldehyde beads (refractive index: 1.68), Examples thereof include silicone beads (refractive index: 1.50).

  The resin material used by mixing with the light scattering particles described above is preferably a translucent resin. Examples of the resin material include melamine resin (refractive index: 1.57), nylon (refractive index: 1.53), polystyrene (refractive index: 1.60), and melamine beads (refractive index: 1.57). , Polycarbonate (refractive index: 1.57), polyvinyl chloride (refractive index: 1.60), polyvinylidene chloride (refractive index: 1.61), polyvinyl acetate (refractive index: 1.46), polyethylene (refractive Ratio: 1.53), polymethyl methacrylate (refractive index: 1.49), poly MBS (refractive index: 1.54), medium density polyethylene (refractive index: 1.53), high density polyethylene (refractive index: 1.54), tetrafluoroethylene (refractive index: 1.35), polytrifluoroethylene chloride (refractive index: 1.42), polytetrafluoroethylene (refractive index: 1.35), and the like.

[barrier]
The barrier 4 can be formed by patterning a resin material such as photosensitive polyimide resin, acrylic resin, methacrylic resin, novolac resin, or epoxy resin by a technique such as photolithography. In order to prevent leakage of light and a decrease in contrast due to external light, the barrier 4 is formed by patterning a material containing light-shielding particles such as carbon fine particles and metal oxide in the above-described photosensitive resin material. Also good. The barrier may be formed by directly patterning the non-photosensitive resin material by screen printing or the like.

  A reflective film may be provided on at least the surface of the barrier 4 in contact with the phosphor layers 3R, 3G, 3B. When a reflective film is provided, the traveling direction of the fluorescent component that escapes laterally from the phosphor layers 3R, 3G, and 3B can be changed to the light extraction direction. Examples of such a reflective film material include reflective metals such as aluminum, silver, gold, aluminum-lithium alloys, aluminum-neodymium alloys, and aluminum-silicon alloys. From the viewpoint of having a high reflectance over the entire visible light region, the reflective film material is preferably aluminum or silver. The materials listed here are examples, and the present embodiment is not limited to these materials. However, it is preferable that the reflective film material has a reflectance of 80% or more in the CIE 1976 L * a * b display system.

  A material that causes light scattering instead of reflection may be applied. As the light-scattering material, for example, the above-described light-scattering particles can be used, and a material in which light-scattering particles are dispersed in a resin may be used as necessary. Further, in order for blue light to be effectively scattered by the light scattering film, the particle size of the light scattering particles needs to be in the Mie scattering region. From this viewpoint, the particle diameter of the light scattering particles is preferably about 100 nm to 500 nm. Even when the light scattering effect is used, it is preferable that the CIE 1976 L * a * b display system has a diffuse reflectance of 80% or more.

  As a technique for coating the surface of the barrier 4 with a reflective film material or a light-scattering material, for example, mask vapor deposition may be used. Alternatively, a reflective film or a light scattering film may be formed on the surface of the barrier 4 by another technique such as a photolithography technique. In addition to using only the surface of the barrier 4 as a reflective film, the barrier 4 may be formed of a material that reflects visible light or a material that scatters visible light. The materials described above can be used as the material that reflects visible light and the material that scatters visible light.

  When the barrier 4 itself is formed of a reflective material or a scattering material, it is preferable to provide a light shielding layer between the barrier 4 and the substrate 2. By providing the light shielding layer, it is possible to suppress a decrease in contrast due to external light reflected or scattered by the barrier 4. When a reflective film or a light scattering film is formed on the surface of the barrier 4, a light shielding layer may be inserted at the interface between the reflective film or the light scattering film and the substrate 2, or the barrier 4 and the reflective film or the light scattering film as a whole. A light shielding layer may be inserted at the interface where the substrate 2 contacts. Further, in order to prevent excitation light designed to enter one pixel from leaking to adjacent pixels and causing color mixing, a light-scattering barrier is formed for the purpose of absorbing light entering the adjacent pixels. A light shielding layer may be inserted on the side opposite to the light extraction direction 4.

  The barrier 4 is preferably formed thicker than the phosphor layers 3R, 3G, 3B. Thereby, it can prevent that fluorescent substance layer 3R, 3G, 3B contacts with the arbitrary members by the side of an excitation light source, and is damaged. When at least the surface of the barrier 4 in contact with the phosphor layers 3R, 3G, 3B has light reflectivity or light scattering properties, the phosphor layer 3R, 3R, 3B can be formed by forming the barrier 4 thicker than the phosphor layers 3R, 3G, 3B. The fluorescent component escaping from 3G and 3B to the side can be efficiently changed in the direction of light extraction to the outside. As the shape of the barrier 4, various shapes surrounding the phosphor layers 3R, 3G, and 3B, such as a lattice shape and a stripe shape, can be adopted. Regarding the cross-sectional shape of the barrier 4, a tapered shape is desirable so that the opening of the barrier 4 is wider on the incident side than on the substrate 2 side so that the excitation light does not enter the adjacent pixel of the pixel that should originally be incident.

  The ratio of the height of the barrier 4 to the lateral width of the barrier 4 (aspect ratio = height of the barrier 4 / width of the barrier 4) is preferably 0.5 or more, and more preferably 0.5 or more and 2 or less. When the aspect ratio is less than 0.5, since the stress applied to the barrier 4 is small, the barrier 4 is not twisted or peeled off even if the structure 5 is not provided in the second region M2, and the effect of the present invention is achieved. Hard to come out. On the contrary, if the aspect ratio exceeds 2, the stress applied to the barrier 4 increases, so that even if the structure 5 is provided in the second region M2, the stress cannot be sufficiently dispersed, There is a concern that peeling cannot be completely eliminated.

When the phosphor layers 3R, 3G, and 3B are patterned by a dispenser method, an ink-jet method, etc., in order to prevent the phosphor solution from overflowing from the barrier 4 and mixing colors between adjacent pixels, the barrier 4 is made liquid repellent. It is essential to grant. Examples of a method for imparting liquid repellency to the barrier 4 include the following methods.
(1) Fluorine plasma treatment For example, as disclosed in Japanese Patent Application Laid-Open No. 2000-76979, the partition wall is repelled by performing plasma treatment on the substrate on which the barrier is formed under the condition that the introduced gas is fluorine-based. Liquidity can be imparted.
(2) Addition of Fluorine Surface Modifier A liquid repellency can be imparted to the barrier 4 by adding a fluorine surface modifier to the light scattering barrier 4 material. As the fluorine-based surface modifier, for example, a UV curable surface modifier Defenser (manufactured by DIC Corporation), Mega Fuck, or the like can be used.

[Structure]
In the present embodiment, the structure 5 formed in the second region M2 needs to form a continuum with the barrier 4 in order to distribute and receive the stress applied to the barrier 4 in the first region M1. is there.
The “first region” in the present embodiment refers to a region where the phosphor layers 3R, 3G, and 3B that emit light by excitation light incident from the excitation light source are formed. That is, in the display device using the phosphor substrate 1 of the present embodiment, the first region M1 is a region that directly contributes to the display of the display device.

  On the other hand, in the display device using the phosphor substrate 1 of the present embodiment, the second region M2 is a region that does not contribute to the display of the display device. Therefore, it is preferable that the second region M2 is not irradiated with excitation light from the excitation light source and the phosphor layers 3R, 3G, and 3B are not provided. With this configuration, since neither the excitation light nor the fluorescence is emitted from the second region M2, the light does not adversely affect the original display, and the second region M2 does not contribute to the display of the display device. It becomes an area.

  When the second region M2 has a function of not transmitting excitation light or a function of not transmitting fluorescence, the second region M2 may be irradiated with excitation light from an excitation light source, or the phosphor layer 3R. , 3G, 3B may be formed. In order to realize a function that does not transmit excitation light or a function that does not transmit fluorescence, for example, a light shielding layer may be provided in a region surrounded by the structure 5 in the second region M2.

As a function of the light shielding layer, it may have a function of shielding the entire visible light region, or may have a function of shielding only a part of the wavelength region like a color filter. Ideally, the light shielding layer preferably absorbs excitation light and fluorescence 100%, but it is impossible in practice. Considering the retina sensitivity of the human eye, the luminance generated in the second region M2 is 10 ⁻⁴ cd / m ² or less, more preferably, the absolute threshold luminance in dark place vision with rod cells working 10 ⁻⁶ cd It is preferable to have a light-shielding function so as to be / m ² or less. With this configuration, the second region M2 is a region that does not contribute to display on the display device.
The barrier 4 located at the boundary line between the first region M1 and the second region M2 may function as a structure.

  In order to disperse stress efficiently, it is desirable that the structure 5 has a thermal expansion coefficient comparable to that of the barrier 4. More preferably, the structure 5 is preferably formed of the members constituting the barrier 4 in order to match the thermal expansion coefficients. When a reflective film or a light scattering film is provided on the surface of the barrier 4, the same film as the reflective film or the light scattering film provided on the surface of the barrier 4 may be provided on the surface of the structure 5. desirable. However, it is not always necessary to provide a reflection film or a light scattering film on the surface of all the structures 5, and only a part of the structures 5 may be provided. In that case, it is preferable to provide the structure 5 in the second region M2 located in the vicinity of the first region M1. Since the material and formation of the structure 5 are the same as those of the barrier 4, description thereof is omitted here.

  The structure 5 may be formed simultaneously with the barrier 4, the structure 5 may be formed after the barrier 4 is formed, or the barrier 4 may be formed after the structure 5 is formed. From the viewpoint of not increasing the number of steps in the manufacturing process, it is desirable to form the structure 5 and the barrier 4 simultaneously. Here, when the structure 5 is formed after the barrier 4 is formed, the structure 5 located at the boundary between the first region M1 and the second region M2 is the first region M1 and the second region. It is preferable to at least partly overlap the upper part of the barrier 4 located at the boundary of M2. When the barrier 4 is formed after the structure 5 is formed, the barrier 4 positioned at the boundary between the first region M1 and the second region M2 is positioned at the boundary between the first region M1 and the second region M2. It is preferable that the structure 5 to be overlapped at least partially.

  Since the barrier 4 and the structure 5 are in reliable contact with each other by the above configuration, the stress applied to the barrier 4 in the first region M1 can be reliably dispersed by the structure 5 in the second region M2. . This effect is effective regardless of whether the barrier 4 and the structure 5 are the same member. As described above, the second region M2 does not contribute at all to the self-luminous component of the display device, but when the reflection function or the light scattering function is given to a part of the structure 5 or the structure 5 itself, In order to prevent a decrease in contrast due to external light, it is preferable to provide a light shielding layer between the structure 5 and the substrate 2.

  The specifications such as the width and pattern shape of the structure 5 are preferably the same as those of the barrier 4 formed in the first region M1. Thereby, for example, when the barrier 4 and the structure 5 are formed by a photolithography method, the pattern of the barrier 4 and the structure 5 is exactly the same. Therefore, the structure using the photomask used when patterning the barrier 4 is used. 5 patterning can be performed. Therefore, an effect that only one photomask is required can be obtained. Further, when the phosphor layers 3R, 3G, and 3B are formed by a wet process such as an ink jet or a dispenser, the discharge amount and the discharge position of the phosphor ink are discharged using the structure 5 formed in the second region M2. Conditions can be optimized. In order to optimize the discharge conditions, it is necessary to give the structure 5 the same liquid repellency as the barrier 4 formed in the first region M1.

  Note that a similar structure has been proposed for an organic EL display device that forms an organic EL layer by discharging and applying an organic EL material onto a substrate by an inkjet method (see, for example, Japanese Patent Application Laid-Open No. 2002-252083). However, this document is only for the purpose of eliminating unevenness in light emission due to non-uniformity of the dry state in the region contributing to light emission, and provides a clue for solving the problem of the present invention that prevents the twisting of the barrier. Absent. In addition, since the organic EL element causes the light emitting layer to emit light by electric field excitation, if even a slight film thickness unevenness occurs in the organic layer including the light emitting layer in the pixel, the balance of the carriers injected from the electrode is lost, which is remarkable. Uneven light emission occurs.

On the other hand, in the present embodiment, the phosphor layers 3R, 3G, and 3B emit light by light excitation instead of electric field excitation, so that the emission intensity is saturated if the phosphor layers 3R, 3G, and 3B have a certain film thickness or more. Therefore, if the film thickness unevenness of the phosphor layers 3R, 3G, 3B is not less than the film thickness at which the light emission intensity is saturated, the light emission unevenness does not occur. Therefore, the above-described literature for eliminating the film thickness unevenness does not solve the barrier deviation that is a problem of the present invention. Further, the height of the barrier for forming the organic EL layer by inkjet is several μm, and the height of the barrier is very small with respect to the width of the barrier. For this reason, the problem of barrier barriers cannot occur. On the other hand, in the present embodiment, the thickness of the phosphor layers 3R, 3G, 3B is preferably 1 μm or more, and therefore the barrier 4 is preferably several tens of μm. Therefore, since the height of the barrier 4 approaches the width of the barrier 4, the aspect ratio becomes high, and as a result, the problem of twisting of the barrier occurs.
From the above, the content of the above-mentioned document and the content of the present invention are completely different, and the present invention cannot be easily created from the above-mentioned document.

  In order to improve the adhesion of the membrane to the substrate, it is known to increase the adhesion area of the membrane to the substrate. However, in the present embodiment, the bonding area of the barrier 4 is not increased in the first region M1 that contributes to light emission, and the structure 5 that forms a continuum with the barrier 4 is provided in the second region M2 that does not contribute to light emission. If necessary, the adhesion is improved by increasing the adhesion area of the structure 5. That is, this embodiment provides a phosphor substrate and a display device that secures adhesion by solving the twist of the barrier 4 with the structure 5 provided in the second region M2 and does not affect the light emission characteristics at all. It is in. In this way, the idea of solving with another film or region without solving with the film or region itself in which adhesion is a problem cannot be easily conceived from the known contents.

[Second Embodiment]
Hereinafter, the phosphor substrate according to the second embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the phosphor substrate of this embodiment is the same as that of the first embodiment, and only the configuration of the structure provided in the second region is different from that of the first embodiment.
2A is a cross-sectional view of the phosphor substrate according to the present embodiment along the line AA ′ of FIG. 2B, and FIG. 2B is a plan view of the phosphor substrate according to the present embodiment. is there.
2A and 2B, the same reference numerals are given to the same components as those in FIGS. 1A and 1B of the first embodiment, and detailed description thereof will be omitted.

  The occupation area occupied by the second region in the substrate may be appropriately set within a range in which no twist occurs in the barrier in the first region. The stress applied to the barrier can be reduced as the area occupied by the second region is increased. However, since the size of the substrate is finite, the occupied area of the second region may not be expanded to a range where no twist occurs in the barrier formed in the first region. In such a case, the stress can be effectively dispersed by increasing the adhesion area of the structure to the substrate.

  As shown in FIGS. 2A and 2B, the phosphor substrate 11 of the present embodiment has a plurality of structures 12 arranged in a grid in the horizontal direction and the vertical direction in the second region M2. The point is the same as in the first embodiment. However, in the first embodiment, the structure 5 that is a continuum with the barrier 4 in the first region M1 is formed with the same width as the barrier 4. On the other hand, in the present embodiment, the structure 12 that forms a continuum with the barrier 4 in the first region M1 is formed with a width different from that of the barrier 4. Specifically, the width of the structure 12 in the vicinity of the first region M1 (1 row × 1 column) in the structure 12 is the same as that of the barrier 4, and is separated from the first region M1 by a predetermined distance. The width of the structure 12 at the position is formed wider than the width of the barrier 4. However, even if the structure 12 is wide, the pitch between the adjacent structures 12 is the same as the pitch of the barriers 4.

  As in the present embodiment, it is effective to disperse the stress effectively without changing the pitch of the structure 12 and by making only the width of at least a part of the structure 12 larger than the barrier 4. If the area of the region surrounded by the structure 12 is changed, when the phosphor layers 3R, 3G, and 3B are formed by a wet process such as an ink jet or a dispenser, it becomes difficult to optimize the discharge conditions described above. However, since the width of the structure 12 in the vicinity of the first region M1 is the same as that of the barrier 4, the area of the region surrounded by the structure 12 in this region is the same as the area of the region surrounded by the barrier 4. It is. Therefore, it is possible to optimize the discharge conditions using a portion near the first region M1.

  In FIG. 2B, the widths of all the structures 12 are widened at a position away from the first region M1 by a predetermined distance. However, it is not always necessary to increase the width of all the structures, and only a part of the structures may be increased. Alternatively, contrary to FIG. 2B, the width of the structure in the vicinity of the first region M1 may be increased. Increasing the width of the structure in the vicinity of the first region is effective in preventing the twisting of the barrier.

[Third Embodiment]
Hereinafter, the phosphor substrate according to the third embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the phosphor substrate of this embodiment is the same as that of the first embodiment, and only the configuration of the structure provided in the second region is different from that of the first embodiment.
FIG. 3A is a cross-sectional view of the phosphor substrate according to the present embodiment taken along line AA ′ of FIG. 3B, and FIG. 3B is a plan view of the phosphor substrate according to the present embodiment. is there.
3A and 3B, the same reference numerals are given to the same components as those in FIGS. 1A and 1B of the first embodiment, and detailed description thereof will be omitted.

  The width of the structure is not necessarily constant in the extending direction (longitudinal direction) of the structure, and may be changed in the extending direction of the structure. As described in the second embodiment, it is also effective to design such that the structure in the vicinity of the first region has a larger width. However, if the width is rapidly changed at the junction between the barrier and the structure, there is a concern that the stress is not sufficiently dispersed.

  As shown in FIGS. 3A and 3B, the phosphor substrate 14 of the present embodiment has a boundary portion between the first region M1 and the second region M2, that is, a junction between the barrier 4 and the structure 15. The width of the structure 15 gradually increases gradually from the end toward the end of the structure 15. With such a structure, the stress applied to the barrier 4 can be smoothly dispersed throughout the structure 15. As a result, it is possible to reliably prevent the barrier 4 from being twisted or peeled off.

[Fourth Embodiment]
Hereinafter, the phosphor substrate according to the fourth embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the phosphor substrate of this embodiment is the same as that of the first embodiment, and only the configuration of the structure provided in the second region is different from that of the first embodiment.
4A is a cross-sectional view of the phosphor substrate according to the present embodiment taken along the line AA ′ of FIG. 4B, and FIG. 4B is a plan view of the phosphor substrate according to the present embodiment. is there.
4 (A) and 4 (B), the same components as those in FIGS. 1 (A) and 1 (B) of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  As in the second and third embodiments, even if the width of the structure in the second region is increased, the twisting or peeling of the barrier may still not be resolved. Therefore, in the phosphor substrate 18 of the present embodiment, as shown in FIGS. 4A and 4B, the structures 19 are formed without gaps over the entire second region M2. That is, the structure 19 is formed in the entire second region M2 without a gap. 4A and 4B, the barrier 4 located at the boundary line between the first region M1 and the second region M2 functions as the structure 19. Thus, since the notch effect due to the pattern disappears by forming the structure 19 in a solid shape, it is possible to form a high-definition barrier with a higher aspect ratio without causing twisting or peeling.

[Fifth Embodiment]
Hereinafter, the phosphor substrate according to the fifth embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the phosphor substrate of this embodiment is the same as that of the first embodiment, and only the configuration of the structure provided in the second region is different from that of the first embodiment.
FIG. 5A is a cross-sectional view of the phosphor substrate according to the present embodiment taken along the line AA ′ of FIG. 5B, and FIG. 5B is a plan view of the phosphor substrate according to the present embodiment. is there.
5 (A) and 5 (B), the same components as those in FIGS. 1 (A) and 1 (B) of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In 1st-4th embodiment, the 2nd area | region where the structure was arrange | positioned was provided so that 4 sides of a rectangular-shaped 1st area might be enclosed. However, the second region does not necessarily have to surround all four sides of the first region. For example, when the width of the barrier extending in the horizontal direction of the substrate is different from the width of the barrier extending in the vertical direction of the substrate, a larger stress is applied to the narrow barrier.

  Therefore, in the phosphor substrate 22 of the present embodiment, the width of the first barrier 4A extending in the horizontal direction of the substrate 2 is set in the vertical direction of the substrate 2 as shown in FIGS. It is narrower than the width of the extending second barrier 4B. Therefore, a larger stress is applied to the first barrier 4A. Correspondingly, only the structure 23 that is continuous with the first barrier 4 </ b> A extending in the horizontal direction of the substrate 2 is provided on the substrate 2. A structure that is continuous with the second barrier 4B extending in the vertical direction of the substrate 2 is not provided. That is, the second region M2 is provided only on the side of the first region M1 in the horizontal direction of the substrate 2. Even in this configuration, a high-definition barrier with a high aspect ratio can be formed without causing twisting or peeling.

[Sixth Embodiment]
Hereinafter, the phosphor substrate according to the sixth embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the phosphor substrate of this embodiment is the same as that of the first embodiment, and only the configuration of the structure provided in the second region is different from that of the first embodiment.
6A is a cross-sectional view of the phosphor substrate according to the present embodiment taken along line AA ′ of FIG. 6B, and FIG. 6B is a plan view of the phosphor substrate according to the present embodiment. is there.
6A and 6B, the same reference numerals are given to the same components as those in FIGS. 1A and 1B of the first embodiment, and detailed description thereof will be omitted.

  In the fifth embodiment, as shown in FIGS. 5A and 5B, only the structure 23 that is continuous with the first barrier 4A extending in the horizontal direction of the substrate 2 is provided. In contrast, the phosphor substrate 26 of the present embodiment has a structure 23 that is continuous with the first barrier 4 </ b> A extending in the horizontal direction of the substrate 2, as shown in FIGS. In addition, a structure 27 having the same width as that of the second barrier 4B is provided so as to extend in the vertical direction across the adjacent structures 23. Similar to the fifth embodiment, the second region M2 is provided only on the side of the first region M1 in the horizontal direction of the substrate 2.

  Thus, by providing the structures 23 and 27 extending in two directions, the stress can be more effectively dispersed.

[Seventh Embodiment]
Hereinafter, the phosphor substrate according to the seventh embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the phosphor substrate of this embodiment is the same as that of the first embodiment, and only the configuration of the structure provided in the second region is different from that of the first embodiment.
FIG. 7A is a cross-sectional view of the phosphor substrate according to the present embodiment taken along the line AA ′ of FIG. 7B, and FIG. 7B is a plan view of the phosphor substrate according to the present embodiment. is there.
7A and 7B, the same reference numerals are given to the same components as those in FIGS. 1A and 1B of the first embodiment, and detailed description thereof will be omitted.

  In the first to fourth embodiments, the structures in the second region M2 are all formed continuously to form a complete lattice. On the other hand, in the phosphor substrate 30 of this embodiment, as shown in FIGS. 7A and 7B, a part of the structure 5 in the second region M2 is not continuous, and the structure 5 has a portion (indicated by reference numeral B) divided in some places.

  Also in this configuration, since the stress of the barrier 4 is sufficiently dispersed through the portion where the structure 5 is continuous with the barrier 4, a high-definition barrier with a high aspect ratio can be formed without twisting.

[Eighth Embodiment]
Hereinafter, the phosphor substrate according to the eighth embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the phosphor substrate of this embodiment is the same as that of the first embodiment, and only the configuration of the structure provided in the second region is different from that of the first embodiment.
FIG. 8A is a cross-sectional view of the phosphor substrate according to the present embodiment along the line AA ′ in FIG. 8B, and FIG. 8B is a plan view of the phosphor substrate according to the present embodiment. is there.
8A and 8B, the same reference numerals are given to the same components as those in FIGS. 1A and 1B of the first embodiment, and detailed description thereof will be omitted.

  As shown in FIGS. 8A and 8B, the phosphor substrate 33 of the present embodiment includes adjacent structures 5 in addition to the plurality of structures 5 arranged in a lattice pattern in the second region M2. Structures 34 are also provided on the two diagonal lines of the rectangle surrounded by. The structures 34 provided on the diagonal line form a continuous body with the plurality of structures 5 arranged in a lattice pattern.

  According to this configuration, since the structure 34 that forms a continuum with the lattice-like structure 5 is further added, the stress of the barrier 4 is more easily dispersed. Therefore, the high-aspect ratio and high-definition barrier 4 can be formed without causing twisting or peeling.

In the present embodiment, the structure 34 as shown in FIG. 9A is provided, but instead of this structure, structures as shown in FIGS. 9B to 9D may be provided.
In the example shown in FIG. 9B, the structures 35 provided on two diagonal lines are divided at points where they intersect each other.
In the example shown in FIG. 9C, the structure 36 is provided only on one of the two diagonal lines.
In the example shown in FIG. 9D, in addition to the divided structures 37 arranged on two diagonal lines, a structure 37 extending from the midpoint of each side toward the center is provided.

[Color filter]
The phosphor substrate 1 of the above embodiment is preferably provided with a color filter between the light extraction side substrate 2 and the phosphor layers 3R, 3G, 3B. As the color filter, a conventional color filter can be used. By providing the color filter, the color purity of red, green, and blue pixels can be increased, and the color reproduction range of the display device can be expanded. Each of the blue color filter formed on the blue phosphor layer 3B, the green color filter formed on the green phosphor layer 3G, and the red color filter formed on the red phosphor layer 3R is included in the outside light. The excitation light component that excites each phosphor to be absorbed is absorbed. As a result, it is possible to reduce and prevent light emission of the phosphor layers 3R, 3G, and 3B due to external light, and it is possible to reduce and prevent a decrease in contrast. Due to the presence of the blue color filter, the green color filter, and the red color filter, it is possible to prevent the excitation light that is not absorbed by the phosphor layers 3R, 3G, and 3B and passes through the phosphor layers 3R, 3G, and 3B from leaking to the outside. . Therefore, it is possible to prevent a decrease in color purity due to a color mixture of the light emitted from the phosphor layers 3R, 3G, and 3B and the excitation light.

[light source]
Next, the light source according to the present embodiment will be described.
As a light source for exciting the phosphor, ultraviolet light and blue light are preferable. Examples of the light source include an ultraviolet LED, a blue LED, an ultraviolet light emitting inorganic EL, a blue light emitting inorganic EL, an ultraviolet light emitting organic EL, and a blue light emitting organic EL, but are not limited to these light sources. By directly switching these light sources, it is possible to control ON / OFF of light for displaying an image. Alternatively, a layer having a shutter function (light transmittance adjustment function) such as a liquid crystal layer is arranged between the phosphor layer and the light source, and light ON / OFF can be controlled by controlling the layer. is there. In addition, it is possible to control ON / OFF of both the layer having a shutter function such as a liquid crystal layer and the light source.

Next, details of an embodiment of the display device in the case where the phosphor substrate and the light source are configured will be described.
As the light source, known ultraviolet LED, blue LED, ultraviolet light emitting inorganic EL, blue light emitting inorganic EL, ultraviolet light emitting organic EL, blue light emitting organic EL, and the like can be used, and are not particularly limited. These light sources can be manufactured by using known materials and known manufacturing methods. As the ultraviolet light, light having a main emission peak in the range of 360 to 410 nm is preferable. As the blue light, light having a main emission peak in the range of 410 to 470 nm is preferable.

  It is desirable that the light source has directivity. Directivity refers to the property that the intensity of light varies depending on the direction. The directivity may be provided at the time when light enters the phosphor layer. The light source desirably makes parallel light incident on the phosphor layer. The degree of directivity of the light source is 30 degrees or less, more preferably 10 degrees or less. This is because if the half-value width is larger than 30 degrees, the light emitted from the light source enters other than the desired pixel and excites phosphors other than the desired pixel, thereby lowering the color purity and contrast.

Hereinafter, a light-emitting element that can be suitably used as a light source will be described.
[LED]
As the LED used in the present embodiment, a known LED can be used. For example, an ultraviolet light emitting inorganic LED or a blue light emitting inorganic LED can be used. These LEDs include, for example, a substrate, a buffer layer, an n-type contact layer, an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type contact layer, but are not limited thereto.

The active layer used in this embodiment is a layer that emits light by recombination of electrons and holes. As the active layer material, a known active layer material for LED can be used. For example, as the ultraviolet active layer material, AlGaN, InAlN, In _a Al _b Ga _1-ab N (0 ≦ a, 0 ≦ b, a + b ≦ 1), and as the blue active layer material, In _z Ga _1-z N (0 <z <1) and the like may be mentioned, but this embodiment is not limited to these.

  An active layer having a single quantum well structure or a multiple quantum well structure can be used. The active layer of the quantum well structure may be either n-type or p-type, but if a non-doped (impurity-free) active layer is used, the half-value width of the emission wavelength is narrowed by interband light emission, and the color purity is good. Since luminescence is obtained, it is preferable. The active layer may be doped with at least one of a donor impurity and an acceptor impurity. If the crystallinity of the active layer doped with impurities is the same as that of non-doped, when the donor impurity is doped, the interband emission intensity can be further increased compared to the non-doped active layer. When the acceptor impurity is doped, the peak wavelength can be shifted to the energy side lower by about 0.5 eV than the peak wavelength of interband light emission, but the half width becomes wider. When both the acceptor impurity and the donor impurity are doped, the emission intensity can be further increased as compared with the emission intensity of the active layer doped only with the acceptor impurity. In particular, when an active layer doped with an acceptor impurity is formed, the conductivity type of the active layer is preferably doped with a donor impurity such as Si to be n-type.

As the n-type cladding layer used in the present embodiment, a known n-type cladding layer material for LED can be used. The n-type cladding layer may be a single layer or a multilayer. By forming the n-type cladding layer with an n-type semiconductor material having a band gap energy larger than that of the active layer, a potential barrier against holes is created between the n-type cladding layer and the active layer, and the holes are confined in the active layer. be able to. As an example, the n-type cladding layer can be formed of n-type In _x Ga _1-x N (0 ≦ x <1), but the present embodiment is not limited to these.

As the p-type cladding layer used in the present embodiment, a known p-type cladding layer material for LED can be used. The p-type cladding layer may be a single layer or a multilayer. By forming the p-type cladding layer with a p-type semiconductor material having a band gap energy larger than that of the active layer, a potential barrier against electrons is formed between the p-type cladding layer and the active layer, and the electrons can be confined in the active layer. it can. As an example, the p-type cladding layer can be formed of Al _y Ga _1-y N (0 ≦ y ≦ 1), but the present invention is not limited thereto.

  As the contact layer used in the present embodiment, a known contact layer material for LED can be used. For example, an n-type contact layer made of n-type GaN can be formed as a layer for forming an electrode in contact with the n-type cladding layer. A p-type contact layer made of p-type GaN can be formed as a layer for forming an electrode in contact with the p-type cladding layer. However, the contact layer need not be formed as long as the second n-type cladding layer and the second p-type cladding layer are formed of GaN, and the second cladding layer can be used as the contact layer. It is.

Moreover, although each said layer used by this embodiment can use the well-known film-forming process for LED, this invention is not specifically limited to these. For example, by using a vapor phase growth method such as MOVPE (metal organic vapor phase epitaxy), MBE (molecular beam vapor phase epitaxy), HDVPE (hydride vapor phase epitaxy), for example, sapphire (C plane, A plane, R Plane), SiC (including 6H—SiC, 4H—SiC), spinel (MgAl ₂ O ₄ , especially its (111) plane), ZnO, Si, GaAs, or other oxide single crystal substrates (such as NGO) ) Or the like.

[Organic EL device]
As the organic EL element used in the present embodiment, a known organic EL can be used. For example, an organic EL element can be constituted by a first electrode on the substrate, an edge cover covering the edge portion of the first electrode, an organic layer including at least the organic light emitting layer, and the second electrode, but is not limited thereto. is not.

[substrate]
As a substrate used in the present embodiment, for example, an inorganic material substrate made of glass, quartz or the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, or the like, an insulating substrate such as a ceramic substrate made of alumina, or aluminum (Al), a metal substrate made of iron (Fe) or the like, or a substrate in which an insulating material made of silicon oxide (SiO ₂ ) or an organic insulating material is coated on the substrate, or a metal substrate made of Al or the like Examples thereof include a substrate whose surface is subjected to insulation treatment by a method such as anodic oxidation.

  Furthermore, a substrate obtained by coating the above plastic substrate with an inorganic material, and a substrate obtained by coating the above metal substrate with an inorganic insulating material are further preferable. Thereby, it becomes possible to eliminate the deterioration of the organic EL due to the permeation of water, which is the biggest problem when the plastic substrate is used as the organic EL substrate. Note that it is known that the organic EL deteriorates even with a low amount of moisture. In addition, it is possible to eliminate leakage (short circuit) due to protrusions of the metal substrate, which is the biggest problem when the metal substrate is used as an organic EL substrate. In addition, since the film thickness of organic EL is as very thin as about 100-200 nm, it is known that a leak (short circuit) will occur remarkably in the current in the pixel portion due to the protrusion.

Further, when forming a TFT for driving an organic EL element by an active matrix method, it is preferable to use a substrate that does not melt at a temperature of 500 ° C. or less and does not cause distortion. Further, since a general metal substrate has a coefficient of thermal expansion different from that of glass, it is difficult to form a TFT on the metal substrate with a conventional production apparatus. However, using a metal substrate that is an iron-nickel alloy having a linear expansion coefficient of 1 × 10 ⁻⁵ / ° C. or less, and using a conventional production apparatus, a TFT is formed on the metal substrate by matching the linear expansion coefficient with glass. And can be formed at low cost. In the case of a plastic substrate, since the heat-resistant temperature is very low, it is possible to transfer and form the TFT on the plastic substrate by forming the TFT on the glass substrate and then transferring the TFT to the plastic substrate. is there.

  Further, when light emitted from the organic EL layer is taken out from the side opposite to the substrate, there is no restriction as a substrate. On the other hand, when light emitted from the organic EL layer is extracted from the substrate side, it is necessary to use a transparent or translucent substrate as a substrate to be used in order to extract light emitted from the organic EL layer to the outside.

[TFT]
The TFT is formed on the substrate in advance before forming the organic EL element, and functions as a switching device and a driving device. As the TFT used in this embodiment, a known TFT can be cited. In this embodiment, a metal-insulator-metal (MIM) diode can be used instead of the TFT.

  A TFT that can be used in the active drive organic EL element of the present embodiment can be formed using a known material, structure, and formation method. As the material of the active layer of TFT, for example, amorphous semiconductor (amorphous silicon), polycrystalline silicon (polysilicon), microcrystalline silicon, inorganic semiconductor materials such as cadmium selenide, zinc oxide, indium oxide-gallium oxide- Examples thereof include oxide semiconductor materials such as zinc oxide, or organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene. Examples of the TFT structure include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.

As the method for forming the active layer constituting the TFT, (1) a method of ion doping impurities into amorphous silicon formed by plasma induced chemical vapor deposition (PECVD), and (2) a silane (SiH ₄ ) gas is used. Forming amorphous silicon by low pressure chemical vapor deposition (LPCVD), crystallizing amorphous silicon by solid phase epitaxy to obtain polysilicon, and then ion doping by ion implantation, (3) Si ₂ H _A method in which amorphous silicon is formed by LPCVD using ₆ gases or PECVD using SiH ₄ gas, annealed by a laser such as an excimer laser, and amorphous silicon is crystallized to obtain polysilicon, followed by ion doping (Low temperature process), (4) LPCVD method or The polysilicon layer is formed by ECVD method, a gate insulating film formed by thermal oxidation at 1000 ° C. or higher, thereon, after forming a gate electrode of the n ⁺ polysilicon, a method of performing ion doping (high temperature process ), (5) a method of forming an organic semiconductor material by an inkjet method or the like, and (6) a method of obtaining a single crystal film of the organic semiconductor material.

The gate insulating film of the TFT used in this embodiment can be formed using a known material. Examples thereof include SiO ₂ formed by PECVD, LPCVD, etc., or SiO ₂ obtained by thermally oxidizing a polysilicon film. The signal electrode line, the scanning electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT used in this embodiment can be formed using a known material. Examples of these materials include tantalum (Ta), aluminum (Al), copper (Cu), and the like. The TFT of the organic EL element according to this embodiment can be formed with the above-described configuration, but is not limited to these materials, structures, and formation methods.

[Interlayer insulation film]
An interlayer insulating film that can be used in the active drive organic EL element of the present embodiment can be formed using a known material. Examples of the material include inorganic materials such as silicon oxide (SiO ₂ ), silicon nitride (SiN or Si ₂ N ₄ ), and tantalum oxide (TaO or Ta ₂ O ₅ ), or organic materials such as an acrylic resin and a resist material. Etc. Examples of the method for forming the interlayer insulating film include a dry process such as a chemical vapor deposition (CVD) method and a vacuum deposition method, and a wet process such as a spin coating method. Moreover, it can also pattern by the photolithographic method etc. as needed.

In the case of taking out light emission from the organic EL layer from the opposite side (second electrode side) of the substrate, for the purpose of preventing external light from entering the TFT formed on the substrate and changing the TFT characteristics, It is preferable to use a light-shielding insulating film having light-shielding properties. Further, the interlayer insulating film and the light-shielding insulating film can be used in combination. Examples of the light-shielding interlayer insulating film include those obtained by dispersing pigments or dyes such as phthalocyanine and quinaclonone in a polymer resin such as polyimide, color resists, black matrix materials, inorganic insulating materials such as Ni _x Zn _y Fe ₂ O _{4, and the} like. Can be mentioned. However, the present embodiment is not limited to these materials and forming methods.

[Planarization film]
When the TFT or the like is formed on the substrate in the active drive organic EL element of the present embodiment, irregularities are formed on the surface, and the irregularities cause defects in the organic EL element, for example, pixel electrode defects, organic EL layers. Loss, breakage of the counter electrode, short circuit between the pixel electrode and the counter electrode, reduction in breakdown voltage, and the like may occur. In order to prevent these defects, a planarizing film may be provided on the interlayer insulating film.

  The planarization film used in this embodiment can be formed using a known material. Examples of the material for the planarizing film include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material. Examples of the method for forming the planarizing film include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method, but the present invention is not limited to these materials and forming methods. Further, the planarization film may have a single layer structure or a multilayer structure.

[First electrode and second electrode]
The first electrode and the second electrode used in this embodiment function as a pair as an anode or a cathode of the organic EL element. That is, when the first electrode is an anode, the second electrode is a cathode, and when the first electrode is a cathode, the second electrode is an anode. Specific compounds and formation methods are exemplified below, but the present embodiment is not limited to these materials and formation methods.

A known electrode material can be used as an electrode material for forming the first electrode and the second electrode. As a material of the anode, from the viewpoint of more efficiently injecting holes into the organic EL layer, a metal such as gold (Au), platinum (Pt), nickel (Ni) having a work function of 4.5 eV or more, and Indium (In) and tin (Sn) oxide (ITO), tin (Sn) oxide (SnO ₂ ) indium (In) and zinc (Zn) oxide (IZO), etc. are transparent electrode materials As mentioned. Further, as a material for the cathode, lithium (Li), calcium (Ca), cerium (Ce), barium (Ba) having a work function of 4.5 eV or less from the viewpoint of more efficiently injecting electrons into the organic EL layer. ), Metals such as aluminum (Al), or alloys such as Mg: Ag alloy and Li: Al alloy containing these metals.

  A 1st electrode and a 2nd electrode can be formed by well-known methods, such as EB vapor deposition method, sputtering method, ion plating method, resistance heating vapor deposition method, using said material. However, this embodiment is not limited to these formation methods. Further, if necessary, the electrode can be patterned by a photolithographic method, a laser peeling method, or the like, or a patterned electrode can be directly formed by combining with a shadow mask. The film thickness of the electrode is preferably 50 nm or more. When the film thickness of the electrode is less than 50 nm, the wiring resistance increases, so that the drive voltage may increase.

  When using the microcavity effect for the purpose of improving color purity, improving luminous efficiency, improving front luminance, etc., when taking out light emitted from the organic EL layer from the first electrode side (second electrode side), It is preferable to use a translucent electrode as the first electrode (second electrode). As a material used here, it is possible to use a metal translucent electrode alone or a combination of a metal translucent electrode and a transparent electrode material. As the translucent electrode material, silver is preferable from the viewpoint of reflectance and transmittance. The film thickness of the translucent electrode is preferably 5 to 30 nm. When the film thickness is less than 5 nm, the light is not sufficiently reflected, and a sufficient interference effect cannot be obtained. When the film thickness exceeds 30 nm, the light transmittance is drastically decreased, and the luminance and efficiency may be decreased. Moreover, it is preferable to use an electrode with high reflectivity that reflects light as the second electrode (first electrode). Examples of electrode materials used at this time include reflective metal electrodes such as aluminum, silver, gold, aluminum-lithium alloys, aluminum-neodymium alloys, and aluminum-silicon alloys, transparent electrodes, and reflective metal electrodes (reflective electrodes). The electrode etc. which combined these are mentioned.

[Organic EL layer]
The organic EL layer used in this embodiment may be a single layer structure of an organic light emitting layer or a multilayer structure of an organic light emitting layer and a charge transport layer. Specifically, the following configurations may be mentioned, but the present embodiment is not limited thereto.
(1) Organic light emitting layer (2) Hole transport layer / organic light emitting layer (3) Organic light emitting layer / electron transport layer (4) Hole transport layer / organic light emitting layer / electron transport layer (5) Hole injection layer / Hole transport layer / organic light emitting layer / electron transport layer (6) hole injection layer / hole transport layer / organic light emitting layer / electron transport layer / electron injection layer (7) hole injection layer / hole transport layer / organic Light emitting layer / Hole prevention layer / Electron transport layer (8) Hole injection layer / Hole transport layer / Organic light emitting layer / Hole prevention layer / Electron transport layer / Electron injection layer (9) Hole injection layer / Hole Transport layer / electron prevention layer / organic light emitting layer / hole prevention layer / electron transport layer / electron injection layer

Each layer of the organic light emitting layer, the hole injection layer, the hole transport layer, the hole prevention layer, the electron prevention layer, the electron transport layer, and the electron injection layer may have a single layer structure or a multilayer structure.
The organic light emitting layer may be comprised only from the organic light emitting material illustrated below, and may be comprised from the combination of a luminescent dopant and host material. The organic light emitting layer may optionally contain a hole transport material, an electron transport material, an additive (donor, acceptor, etc.), and these materials are dispersed in a polymer material (binding resin) or an inorganic material. It may be a configured. From the viewpoint of luminous efficiency and lifetime, those in which a luminescent dopant is dispersed in a host material are preferable.

  As the organic light emitting material, a known light emitting material for organic EL can be used. This type of light-emitting material is classified as a low-molecular light-emitting material, a polymer light-emitting material, or the like. Although these specific compounds are illustrated below, this invention is not limited to these materials. The light-emitting material may be classified into a fluorescent material, a phosphorescent material, and the like. From the viewpoint of reducing power consumption, it is preferable to use a phosphorescent material having high light emission efficiency.

Specific compounds are exemplified below, but the present invention is not limited to these materials.
As the light-emitting dopant optionally contained in the light-emitting layer, a known dopant material for organic EL can be used. Examples of such dopant materials include, for example, p-quaterphenyl, 3,5,3,5 tetra-t-butylsecphenyl, 3,5,3,5 tetra-t-butyl-p. -Fluorescent materials such as quinckphenyl. Fluorescent light-emitting materials such as styryl derivatives, bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic), bis (4 ′, 6′-difluorophenyl) And phosphorescent organometallic complexes such as polydinato) tetrakis (1-pyrazoyl) borate iridium (III) (FIr ₆ ).

  As a host material when using a dopant, a known host material for organic EL can be used. As such a host material, the above-described low molecular light emitting material, polymer light emitting material, 4,4′-bis (carbazole) biphenyl, 9,9-di (4-dicarbazole-benzyl) fluorene (CPF), 3 , 6-bis (triphenylsilyl) carbazole (mCP), carbazole derivatives such as (PCF), aniline derivatives such as 4- (diphenylphosphoyl) -N, N-diphenylaniline (HM-A1), 1,3- And fluorene derivatives such as bis (9-phenyl-9H-fluoren-9-yl) benzene (mDPFB) and 1,4-bis (9-phenyl-9H-fluoren-9-yl) benzene (pDPFB).

  The charge injection / transport layer is used to more efficiently inject charges (holes, electrons) from the electrode and transport (injection) to the light emitting layer, and the charge injection layer (hole injection layer, electron injection layer). It is classified as a transport layer (hole transport layer, electron transport layer). The charge injecting and transporting layer may be composed only of the charge injecting and transporting material exemplified below, and may optionally contain additives (donor, acceptor, etc.), and these materials are polymer materials (conjugation). Wear resin) or a structure dispersed in an inorganic material.

  As the charge injecting and transporting material, known charge transporting materials for organic EL and organic photoconductors can be used. Such charge injecting and transporting materials are classified into hole injecting and transporting materials and electron injecting and transporting materials. Specific examples of these compounds are given below, but the present invention is not limited to these materials.

Examples of the hole injection / hole transport material include oxides such as vanadium oxide (V ₂ O ₅ ) and molybdenum oxide (MoO ₂ ), inorganic p-type semiconductor materials, porphyrin compounds, N, N′-bis (3 -Methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD), etc. Low molecular weight materials such as tertiary amine compounds, hydrazone compounds, quinacridone compounds, styrylamine compounds, polyaniline (PANI), polyaniline-camphor sulfonic acid (PANI-CSA), 3,4-polyethylenedioxythiophene / polystyrene sulfonate ( PEDOT / PSS), poly (triphenylamine) derivative (Poly-TPD), polyvinylcarbazole (PVC) z), polymer materials such as poly (p-phenylene vinylene) (PPV), poly (p-naphthalene vinylene) (PNV), and the like.

  In terms of more efficient injection and transport of holes from the anode, the material used as the hole injection layer has the highest occupied molecular orbital (HOMO) than the hole injection transport material used for the hole transport layer. It is preferable to use a material having a low energy level. As the hole transport layer, it is preferable to use a material having a higher hole mobility than the hole injection transport material used for the hole injection layer.

  In order to further improve the hole injection / transport property, it is preferable to dope the hole injection / transport material with an acceptor. As the acceptor, a known acceptor material for organic EL can be used. Although these specific compounds are illustrated below, this invention is not limited to these materials.

Acceptor materials include Au, Pt, W, Ir, POCl ₃ , AsF ₆ , Cl, Br, I, vanadium oxide (V ₂ O ₅ ), molybdenum oxide (MoO ₂ ), and other inorganic materials, TCNQ (7, 7 , 8,8, -tetracyanoquinodimethane), TCNQF ₄ (tetrafluorotetracyanoquinodimethane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (dicyclodicyanobenzoquinone), etc. And compounds having a nitro group such as TNF (trinitrofluorenone) and DNF (dinitrofluorenone), and organic materials such as fluoranyl, chloranil and bromanyl. Among these, compounds having a cyano group such as TCNQ, TCNQF ₄ , TCNE, HCNB, DDQ and the like are more preferable because they can increase the carrier concentration more effectively.

Examples of electron injection / electron transport materials include inorganic materials that are n-type semiconductors, oxadiazole derivatives, triazole derivatives, thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, diphenoquinone derivatives, fluorenone derivatives, benzodifuran derivatives. And low molecular weight materials such as poly (oxadiazole) (Poly-OXZ) and polystyrene derivatives (PSS). In particular, examples of the electron injection material include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF ₂ ), and oxides such as lithium oxide (Li ₂ O).

  The material used as the electron injection layer is higher in the energy level of the lowest unoccupied molecular orbital (LUMO) than the electron injection and transport material used in the electron transport layer in that the electron injection and transport from the cathode is performed more efficiently. It is preferable to use a material. As the material used for the electron transport layer, a material having higher electron mobility than the electron injection transport material used for the electron injection layer is preferably used.

  In order to further improve the electron injection / transport property, it is preferable to dope the electron injection / transport material with a donor. As the donor, a known donor material for organic EL can be used. Although these specific compounds are illustrated below, this invention is not limited to these materials.

Donor materials include inorganic materials such as alkali metals, alkaline earth metals, rare earth elements, Al, Ag, Cu, and In, anilines, phenylenediamines, benzidines (N, N, N ′, N′-tetraphenyl) Benzidine, N, N′-bis- (3-methylphenyl) -N, N′-bis- (phenyl) -benzidine, N, N′-di (naphthalen-1-yl) -N, N′-diphenyl- Benzidine, etc.), triphenylamines (triphenylamine, 4,4′4 ″ -tris (N, N-diphenyl-amino) -triphenylamine, 4,4′4 ″ -tris (N-3- Methylphenyl-N-phenyl-amino) -triphenylamine, 4,4′4 ″ -tris (N- (1-naphthyl) -N-phenyl-amino) -triphenylamine, etc.), triphenyldiamines ( N, N'- Compounds having an aromatic tertiary amine such as di- (4-methyl-phenyl) -N, N′-diphenyl-1,4-phenylenediamine), phenanthrene, pyrene, perylene, anthracene, tetracene, pentacene, etc. There are organic materials such as condensed polycyclic compounds (wherein the condensed polycyclic compounds may have a substituent), TTFs (tetrathiafulvalene), dibenzofuran, phenothiazine, and carbazole.
Among these, a compound having an aromatic tertiary amine in the skeleton, a condensed polycyclic compound, and an alkali metal are particularly preferable because the carrier concentration can be increased more effectively.

  An organic EL layer such as a light emitting layer, a hole transport layer, an electron transport layer, a hole injection layer, and an electron injection layer is spin-coated using a coating liquid for forming an organic EL layer in which the above materials are dissolved and dispersed in a solvent. Known wet methods such as coating methods, dipping methods, doctor blade methods, discharge coating methods, spray coating methods, etc., inkjet methods, letterpress printing methods, intaglio printing methods, screen printing methods, printing methods such as microgravure coating methods, etc. It can be formed by a process. Alternatively, known dry processes such as resistance heating vapor deposition, electron beam (EB) vapor deposition, molecular beam epitaxy (MBE), sputtering, organic vapor deposition (OVPD), etc., or laser transfer Or the like. In addition, when forming an organic EL layer by a wet process, the coating liquid for organic EL layer formation may contain the additive for adjusting the physical properties of coating liquid, such as a leveling agent and a viscosity modifier.

  The film thickness of each organic EL layer is usually about 1 to 1000 nm, but 10 to 200 nm is particularly preferable. If the film thickness is less than 10 nm, the physical properties (charge injection characteristics, transport characteristics, confinement characteristics) that are originally required cannot be obtained. In addition, pixel defects due to foreign matters such as dust may occur. On the other hand, if the film thickness exceeds 200 nm, the drive voltage increases due to the resistance component of the organic EL layer, leading to an increase in power consumption.

[Edge cover]
In the organic EL element of the present embodiment, a leak occurs between the first electrode and the second electrode at the edge portion of the first electrode formed on the substrate side between the first electrode and the second electrode. In order to prevent this, an edge cover made of an insulating material is provided. The edge cover can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using an insulating material, and is patterned by a known dry or wet photolithography method. However, the present invention is not limited to these forming methods.

  As the insulating material, a known material can be used, and it is not particularly limited in the present invention. However, the insulating material needs to transmit light, and examples thereof include SiO, SiON, SiN, SiOC, SiC, HfSiON, ZrO, HfO, and LaO. Moreover, as a film thickness of an edge cover, 100-2000 nm is preferable. When the film thickness is 100 nm or less, the insulation is not sufficient, and leakage occurs between the first electrode and the second electrode, resulting in an increase in power consumption and non-light emission. On the other hand, if the film thickness is 2000 nm or more, it takes a long time for the film forming process, resulting in deterioration of productivity and disconnection of the second electrode at the edge cover.

  The organic EL element preferably has a microcavity structure (optical microresonator structure) due to an interference effect between a reflective electrode used as an electrode composed of an anode and a cathode and a semitransparent electrode, or a dielectric multilayer film. Thereby, it becomes possible to condense the light emission of the organic EL element in the front direction (provide directivity). As a result, it is possible to reduce the loss of light escaping to the surroundings and increase the light emission efficiency at the front. As a result, it is possible to more efficiently propagate the light emission energy generated in the light emitting layer of the organic EL element to the phosphor layer, thereby increasing the front luminance. In addition, the emission spectrum can be adjusted due to the interference effect, and the emission spectrum can be adjusted by adjusting to a desired emission peak wavelength or half width. If the spectrum is controlled so that the red and green phosphors can be excited more effectively, the color purity of the blue pixel can be improved.

  The organic EL element according to the present embodiment is electrically connected to an external drive circuit (scanning line electrode circuit, data signal electrode circuit, power supply circuit) for driving. As the substrate constituting the organic EL, a glass substrate, more preferably a metal substrate, a plastic substrate, still more preferably a metal substrate or a substrate obtained by coating an insulating material on a plastic substrate is used.

  The organic EL element according to this embodiment may be driven by directly connecting the organic EL to an external circuit, or a switching circuit such as a TFT is disposed in the pixel, and the organic EL element is connected to a wiring to which the TFT or the like is connected. External drive circuits (scanning line electrode circuit (source driver), data signal electrode circuit (gate driver), power supply circuit)) for driving the signal may be electrically connected.

  The active organic EL element substrate constituting the active drive type organic EL element is formed by coating an insulating material on a glass substrate, more preferably on a metal substrate, on a plastic substrate, and more preferably on a metal substrate or a plastic substrate. A plurality of scanning signal lines and data signal lines are disposed on the substrate, and TFTs are disposed at intersections between the scanning signal lines and the data signal lines.

[First configuration example of display device]
Hereinafter, a configuration example of a display device using an active matrix driving type organic EL element substrate as a light source will be described.
FIG. 10 is a cross-sectional view showing the display device of this embodiment. FIG. 11 is a plan view showing the display device of this embodiment. In FIG. 10, the same components as those in FIG. 1A are denoted by the same reference numerals, and description thereof is omitted.

  As shown in FIG. 10, the display device 82 of the present embodiment includes a phosphor substrate 1 and an organic EL element substrate 83 (light source) bonded to the phosphor substrate 1 with a planarizing film 40 interposed therebetween. Has been. The organic EL element substrate 83 of the present embodiment uses an active matrix driving system using TFTs as means for switching whether to irradiate each of the red pixel PR, the green pixel PG, and the blue pixel PB. . On the other hand, the configuration of the phosphor substrate 1 is as described in the above embodiment. When the organic EL element substrate 83 of the present embodiment emits ultraviolet light, the blue pixel PB has a blue phosphor layer 3B that emits blue light using ultraviolet light as excitation light. Alternatively, when the organic EL element substrate 83 of the present embodiment emits blue light, the blue pixel PB has a light scattering layer that scatters blue light.

(Active matrix drive type organic EL element substrate)
Hereinafter, the active matrix driving type organic EL element substrate 83 of the present embodiment will be described in detail.
As shown in FIG. 10, the organic EL element substrate 83 of the present embodiment has a TFT 85 formed on one surface of the substrate 84. That is, the gate electrode 86 and the gate line 87 are formed, and the gate insulating film 88 is formed on the substrate 84 so as to cover the gate electrode 86 and the gate line 87. An active layer (not shown) is formed on the gate insulating film 88. A source electrode 89, a drain electrode 90, and a data line 91 are formed on the active layer, and covers the source electrode 89, the drain electrode 90, and the data line 91. Thus, a planarizing film 92 is formed. Note that the planarizing film 92 does not have to have a single layer structure, and may be a combination of another interlayer insulating film and a planarizing film. Further, a contact hole 93 reaching the drain electrode 90 through the planarizing film or the interlayer insulating film is formed, and the organic EL element electrically connected to the drain electrode 90 via the contact hole 93 on the planarizing film 92 41 anodes 43 are formed.

  The configuration of the organic EL element 9 itself is as described above. That is, the organic EL element 9 of the present embodiment has an anode 43, a hole injection layer 44, a hole transport layer 45, a light emitting layer 46, a hole blocking layer 47, and an electron transport layer 48 from the lower layer side toward the upper layer side. The electron injection layer 49 and the cathode 50 are sequentially stacked. An edge cover 51 is formed so as to cover the end face of the anode 43.

  As shown in FIG. 11, the display device 82 according to the present embodiment includes a pixel portion 94 formed on an organic EL element substrate 83, a gate signal side drive circuit 95, a data signal side drive circuit 96, a signal wiring 97, and a current. A supply line 98, a flexible printed wiring board 99 (FPC) connected to the organic EL element substrate 83, and an external drive circuit 111 are provided.

  The organic EL element substrate 83 according to the present embodiment is electrically connected to an external drive circuit 111 including a scanning line electrode circuit, a data signal electrode circuit, a power supply circuit, and the like via the FPC 99 in order to drive the organic EL element 9. Has been. In the case of the present embodiment, a switching circuit such as a TFT 85 is disposed in the pixel portion 94, and a data signal side drive for driving the organic EL element 9 to a wiring such as a data line 91 and a gate line 87 to which the TFT 85 is connected. A circuit 96 and a gate signal side drive circuit 95 are connected to each other, and an external drive circuit 111 is connected to these drive circuits via a signal wiring 97. In the pixel portion 94, a plurality of gate lines 87 and a plurality of data lines 91 are arranged, and TFTs 85 are arranged at intersections of the gate lines 87 and the data lines 91.

  The external driving circuit 111 sequentially selects the scanning lines (scanning lines) of the pixel unit 94 by the gate signal side driving circuit 95, and for each pixel element arranged along the selected scanning line, on the data signal side. Pixel data is written by the drive circuit 96. That is, the gate signal side driving circuit 95 sequentially drives the scanning lines, and the data signal side driving circuit 96 outputs the pixel data to the data lines, so that the driven scanning lines and the data lines from which the data is output intersect. The pixel element arranged at the position to be driven is driven.

  The organic EL element according to this embodiment is driven by a voltage-driven digital gradation method. For example, as shown in FIG. 12, two TFTs of a switching TFT 61 and a driving TFT 62 are arranged for each pixel, and the driving TFT 62 and the anode 43 provided in the organic EL element 41 are formed in the planarizing layer 92. The contact holes 93 are electrically connected. Further, a capacitor 63 for making the gate potential of the driving TFT 62 constant in one pixel is connected to the gate portion of the driving TFT 62.

  Note that the display device of the present invention is not particularly limited to these, and a current-driven analog gradation method may be adopted instead of the voltage-driven digital gradation method. In addition, the number of TFTs is not particularly limited, and the organic EL element may be driven by the two TFTs described above. For the purpose of preventing variations in TFT characteristics (mobility and threshold voltage), An organic EL element using two or more conventional TFTs having a compensation circuit built therein may be driven.

[Inorganic EL]
In the present embodiment, a known inorganic EL can be used as the inorganic EL element used as the light source. For example, the ultraviolet light emitting inorganic EL and the blue light emitting inorganic EL are composed of, for example, a substrate, a first electrode, a first dielectric layer, a light emitting layer, a second dielectric layer, and a second electrode, but are not limited thereto. It is not something.

[substrate]
As a substrate used for the inorganic EL element, for example, an inorganic material substrate made of glass, quartz, etc., a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, etc., an insulating substrate such as a ceramic substrate made of alumina, etc., or aluminum The surface of a metal substrate made of (Al), iron (Fe), or the like, or a substrate coated with an insulator made of silicon oxide (SiO 2), an organic insulating material or the like on the substrate, or a metal substrate made of Al, etc. Although the board | substrate etc. which performed the insulation process by methods, such as an anodic oxidation, are mentioned, This invention is not limited to these board | substrates. However, it is preferable to use a plastic substrate or a metal substrate from the viewpoint that the curved portion and the bent portion can be formed without stress. Further, a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material are more preferable.

[First electrode and second electrode]
As the first electrode and the second electrode used in the inorganic EL element, a metal such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), or indium (In) and tin (Sn) Examples of the transparent electrode material include oxides (ITO), tin (Sn) oxides (SnO ₂ ), indium (In), and zinc (Zn) oxides (IZO). It is not limited to. However, it is preferable to use a transparent electrode such as ITO in the light extraction direction, and it is preferable to use a reflective film such as aluminum on the opposite side to the light extraction direction.

  The first electrode and the second electrode can be formed by a known method such as EB vapor deposition, sputtering, ion plating, or resistance heating vapor deposition using the above materials. The method is not limited. If necessary, the formed electrode can be patterned by a photolithographic fee method or a laser peeling method, and a patterned electrode can be directly formed by combining with a shadow mask. The film thickness of the first electrode and the second electrode is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance is increased, which may increase the drive voltage.

[Dielectric layer]
As the first dielectric layer and the second dielectric layer used in the inorganic EL element, a known dielectric material for inorganic EL can be used. Examples of such dielectric materials include tantalum pentoxide (Ta ₂ O ₅ ), silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), aluminum titanate ( AlTiO ₃ ), barium titanate (BaTiO ₃ ), strontium titanate (SrTiO ₃ ) and the like can be mentioned, but the present invention is not limited to these. In addition, the first dielectric layer and the second dielectric layer of the present embodiment may be one type selected from the above dielectric materials, or may be configured by laminating two or more types of materials. The film thickness of the first dielectric layer and the second dielectric layer is preferably about 200 to 500 nm.

[Light emitting layer]
As the light emitting layer used in the inorganic EL element, a known light emitting material for inorganic EL can be used. As such a light emitting material, for example, ZnF ₂ : Gd as an ultraviolet light emitting material, BaAl ₂ S ₄ : Eu, CaAl ₂ S ₄ : Eu, ZnAl ₂ S ₄ : Eu, Ba ₂ as a blue light emitting material. Examples include SiS ₄ : Ce, ZnS: Tm, SrS: Ce, SrS: Cu, CaS: Pb, (Ba, Mg) Al ₂ S ₄ : Eu, but the present invention is not limited thereto. The thickness of the light emitting layer is preferably about 300 to 1000 nm.

[Sealing film, sealing substrate]
It is preferable to provide a sealing film or a sealing substrate for the various light sources of this embodiment. The sealing film and the sealing substrate can be formed by a known sealing material and sealing method. Specifically, a sealing film can be formed by applying a resin on the surface opposite to the substrate of the light source using a spin coating method, an ODF, or a laminating method. After forming an inorganic film such as SiO, SiON, or SiN by plasma CVD, ion plating, ion beam, sputtering, or the like, a resin is further applied using spin coating, ODF, or lamination. Alternatively, a sealing film can be obtained by bonding. The sealing film can prevent entry of oxygen and moisture into the light emitting element from the outside, and the life of the light source is improved. When the light source and the phosphor substrate are connected, they can be bonded with a conventional ultraviolet curable resin, thermosetting resin, or the like. Further, when the light source is directly formed on the phosphor substrate, for example, a method of sealing an inert gas such as nitrogen gas or argon gas with glass, metal or the like can be mentioned. Furthermore, it is preferable to mix a hygroscopic agent such as barium oxide in the enclosed inert gas because deterioration of the organic EL due to moisture can be more effectively reduced. However, the present invention is not limited to these members and forming methods. In addition, when light emission is extracted from the side opposite to the substrate, it is necessary to use a light-transmitting material for both the sealing film and the sealing substrate.

[Polarizer]
In the display device of this embodiment, a polarizing plate is preferably provided on the light extraction side. As the polarizing plate, a combination of a conventional linear polarizing plate and a λ / 4 plate can be used. By providing the polarizing plate, external light reflection from the electrode of the display device and external light reflection on the surface of the substrate or the sealing substrate can be prevented. As a result, the contrast of the display device can be improved.

[Second Configuration Example of Display Device]
Hereinafter, a configuration example of a display device including a liquid crystal element between the phosphor layer and the light source will be described.
FIG. 13 is a cross-sectional view showing the display device of this embodiment.
In FIG. 13, the same components as those in FIG. 1A are denoted by the same reference numerals, and description thereof is omitted.

  As shown in FIG. 13, the display device 113 of this configuration example includes a phosphor substrate 2, an organic EL element substrate 114 (light source), and a liquid crystal element 115. The configuration of the phosphor substrate 1 is the same as that of the first embodiment, and a description thereof will be omitted. The laminated structure of the organic EL element substrate 114 is the same as that used in the display device of the first configuration example. However, in the first configuration example, driving signals are individually supplied to the organic EL elements corresponding to the respective pixels, and each organic EL element is controlled to emit light and not emit light independently. On the other hand, in the present embodiment, the organic EL element 116 is not divided for each pixel and functions as a planar light source common to all the pixels.

  The liquid crystal element 115 is configured to be able to control the voltage applied to the liquid crystal layer for each pixel using a pair of electrodes, and controls the transmittance of light emitted from the entire surface of the organic EL element 116 for each pixel. In other words, the liquid crystal element 115 functions as an optical shutter that selectively transmits light from the organic EL element substrate 114 for each pixel.

  As the liquid crystal element 115 of this embodiment, a known liquid crystal element can be used. For example, the liquid crystal element 115 includes a pair of polarizing plates 117 and 118, electrodes 119 and 120, alignment films 121 and 122, and a substrate 123. The liquid crystal 124 is sandwiched between the alignment films 121 and 122. Further, one optically anisotropic layer is disposed between the liquid crystal cell and one polarizing plate 117, 118, or the optically anisotropic layer is disposed between the liquid crystal cell and both polarizing plates 117, 118. 2 may be arranged. There is no restriction | limiting in particular as a kind of liquid crystal cell, According to the objective, it can select suitably, For example, TN mode, VA mode, OCB mode, IPS mode, ECB mode etc. are mentioned. Further, the liquid crystal element 115 may be passively driven or may be actively driven using a switching element such as a TFT. A combination of switching of the liquid crystal element and switching of the light source is preferable because power consumption can be further reduced.

[Application examples of display devices]
The display device according to the above embodiment can be applied to, for example, the mobile phone shown in FIG.
A cellular phone 127 illustrated in FIG. 14 includes a voice input unit 130, a voice output unit 131, an antenna 132, an operation switch 133, a display unit 129, a housing 128, and the like. And the display apparatus of the said embodiment can be applied suitably as the display part 129. FIG. By applying the display device according to an embodiment of the present invention to the display portion 129 of the mobile phone 127, a mobile phone having a display portion with excellent display quality can be provided.

  The display device according to the above embodiment can be applied to, for example, a flat-screen television shown in FIG. A thin television 135 illustrated in FIG. 15 includes a display portion 137, speakers 138, a cabinet 136, a stand 139, and the like. And the display apparatus of the said embodiment can be applied suitably as the display part 137. FIG. By applying the display device according to the above embodiment to the display portion 137 of the thin television 135, a thin television having a display portion with excellent display quality can be provided.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited at all by these examples.

Comparative Example 1 Barrier Pattern Substrate According to Conventional Technology FIGS. 16A to 16C are process diagrams showing a cross-sectional structure of a barrier pattern substrate of Comparative Example 1. FIG. 17A to 17C are process diagrams showing a planar structure of the barrier pattern substrate of Comparative Example 1. FIG.

As the substrate 200, glass having a thickness of 0.7 mm was used. After washing with water, pure water ultrasonic cleaning 10 minutes, acetone ultrasonic cleaning 10 minutes, and isopropyl alcohol vapor cleaning 5 minutes were performed and dried at 100 ° C. for 1 hour (FIGS. 16A and 17A). )reference).
Next, an epoxy-type positive photosensitive resin was formed on the substrate 200 in a solid form by spin coating, and then baked at 90 ° C. for 2 minutes to obtain a resin film 201 having a thickness of 30 μm (FIG. 16 (B) and FIG. 17 (B)).

Next, the substrate is exposed at an exposure amount of 300 mJ / cm ² using a light-shielding mask for producing 4 rows × 4 columns of frame-shaped barriers 202 with a width of 30 μm and a pitch of 50 μm, and then an alkaline developer. Developed for 1 minute.
When the substrate after development was observed with an optical microscope, twisting and peeling occurred in the barrier 202 of 1 row × 1 column from the end of the frame-shaped barrier 202 (FIGS. 16C and 17C). )reference).

Example 1
FIG. 18A is a diagram illustrating a cross-sectional structure of the barrier pattern substrate of Example 1 along the line AA ′ in FIG. FIG. 18B is a diagram illustrating a planar structure of the barrier pattern substrate according to the first embodiment.

Similar to Comparative Example 1, a resin film having a thickness of 30 μm was obtained on the substrate 300 by a spin coating method.
Next, the first region M1 was exposed using the same mask as in Comparative Example 1. Next, the second region M2 was exposed using the same photomask. At this time, exposure was performed by shifting the relative position of the photomask with respect to the substrate so that the pitch of the barriers 301 formed in the first region M1 and the structures 302 formed in the second region M2 were the same. . The structure 302 formed in the second region M2 was exposed so as to have a frame shape of 4 rows × 4 columns. Note that the exposure amount in the first region M1 and the second region M2 was set to 300 mJ / cm ² as in the first comparative example.

  Next, it developed for 1 minute with the alkali developing solution. When the developed substrate was observed with an optical microscope, the structure 302 formed in the second region M2 was found to be twisted and peeled off, but the barrier 301 formed in the first region M1 was observed. There was no twist or peeling.

(Example 2)
Using the substrate produced in Example 1, a green phosphor layer having a thickness of 20 μm was patterned.
The green phosphor layer is formed by first adding 30 g of green phosphor Ba ₂ SiO ₄ : Eu ^{2+ having} an average particle size of 4 μm and 30 g of a 10 wt% aqueous solution of polyvinyl alcohol, and stirring the green phosphor forming coating solution by a disperser. Produced.
Next, the substrate was washed with UV / O ₃ and then subjected to fluorine plasma treatment to impart lyophobicity to the barrier and impart lyophilicity to the glass substrate.
Next, the previously prepared green phosphor forming coating solution was applied by patterning the inside of a frame-shaped barrier provided on the substrate by a dispenser method. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a green phosphor layer, thereby completing a phosphor substrate.

(Comparative Example 2)
(Example in which the barrier is a light-scattering white barrier and manufactured by the process of Example 1)
As the substrate, glass having a thickness of 0.7 mm was used. This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 100 ° C. for 1 hour.
Next, a white resist containing titanium oxide and barium sulfate was formed on the substrate in a solid shape by a spin coating method and baked at 80 ° C. for 10 minutes to obtain a resist film having a thickness of 30 μm.

Next, the first region was exposed using a light shielding mask for producing a 4 × 4 column-shaped barrier with a width of 30 μm and a pitch of 50 μm.
Next, the second region was exposed using the same photomask. At this time, exposure was performed by shifting the relative position of the photomask with respect to the substrate so that the pitch of the barrier formed in the first region and the structure formed in the second region were the same. The structure formed in the second region was exposed so as to form a frame of 4 rows × 4 columns. Note that the exposure amounts of the first region and the second region were set to 300 mJ / cm ² as in Comparative Example 1.

Next, it developed for 1 minute with the alkali developing solution.
When the substrate after development was observed with an optical microscope, it was observed that not only the structure formed in the second region but also the barrier formed in the first region was twisted and peeled off. Despite the same pattern specifications as in Example 1, the reason why the barrier was twisted was that the white weight of the barrier became heavier than in Example 1 by using a white resist containing light scattering particles in the barrier. As a result, the stress becomes larger than that in Example 1, and it is considered that the twist cannot be eliminated with the same pattern specifications as in Example 1.

(Example 3)
(Example in which multiple structures were interrupted)
FIG. 19A is a diagram illustrating a cross-sectional structure of the barrier pattern substrate of Example 3 along the line AA ′ in FIG. FIG. 19B is a diagram illustrating a planar structure of the barrier pattern substrate of the third embodiment.

Similar to Comparative Example 2, a white resist film having a thickness of 30 μm was formed on the substrate 300 in a solid shape.
Next, the first region was exposed using a light shielding mask for producing a 4 × 4 column-shaped barrier with a width of 30 μm and a pitch of 50 μm.
Next, the second region M2 was exposed using the same photomask. At this time, exposure is performed by shifting the relative position of the photomask with respect to the substrate so that the pitch of the barrier 303 formed in the first region M1 and the pitch of the structures 304 formed in the second region M2 are the same. did. The structure 304 formed in the second region M2 was exposed so as to have a frame shape of 8 rows × 8 columns. In addition, the exposure amount which exposes to the 1st area | region M1 and the 2nd area | region M2 was 300 mJ / cm < ² > similarly to the comparative example 2. FIG.

Next, it developed for 1 minute with the alkali developing solution.
When the substrate after development was observed with an optical microscope, a part of the structure 304 formed in the second region M2 was twisted and peeled off (location B in FIG. 19B). The barrier 303 formed in the first region M1 was neither twisted nor peeled off. The reason for this is that the stress per unit area of the structure 304 formed in the second region M2 is reduced by increasing the second region M2 from 4 rows × 4 columns to 8 rows × 8 columns. As a result, stress can be efficiently dispersed in the structure 304 formed in the second region M2.

Example 4
(Example in which a structure is further added on a diagonal line of a lattice-shaped structure)
FIG. 20A is a diagram illustrating a cross-sectional structure of the barrier pattern substrate of Example 4 along the line AA ′ in FIG. FIG. 20B is a diagram illustrating a planar structure of the barrier pattern substrate of the fourth embodiment.

Similar to Comparative Example 2, a white resist film having a thickness of 30 μm was formed on the substrate 300 in a solid shape.
Next, 4 rows × 4 columns frame-shaped barriers 303 and structures 304 with a width of 30 μm and a pitch of 50 μm are formed into 4 rows × 4 columns of frame shapes with the same width and the same pitch as the barriers 303. Exposure was simultaneously performed using one photomask.
Here, the photomask was designed so that the structure 305 was formed with a width of 20 μm on the diagonal line of the frame-shaped structure 304. In addition, the exposure amount of the 1st area | region M1 and the 2nd area | region M2 was 300 mJ / cm < ² > similarly to the comparative example 2. FIG.

Next, it developed for 1 minute with the alkali developing solution.
When the developed substrate was observed with an optical microscope, the structures 304 and 305 formed in the second region M2 were partially twisted and peeled, but the barrier formed in the first region M1. In 303, neither twist nor peeling occurred. This is because the area of the structure occupying per unit area increases due to the presence of the structure 305 in the frame-shaped structure 304 in the second region M2, and as a result, the stress can be efficiently dispersed.

  In this embodiment, as shown in FIG. 9A, the structure is formed on the diagonal line of the structure, but the present invention is not limited to this. For example, in the present embodiment, it is provided on two diagonal lines, but as shown in FIG. 9C, it is sufficiently effective to provide only on one diagonal line. Moreover, the rectangular vertices of the structure do not need to be connected by the structure in the frame. For example, as shown in FIG. Further, the structure in the frame of the structure does not need to be extended from the top of the structure, and may be extended from the frame of the structure as shown in FIG. 9D. Moreover, it is not necessary to provide the structure in a structure in the whole region of a structure, and you may provide the structure in a structure frame only in part by embodiment.

(Example 5)
(Example in which the pitch of the structure is narrowed)
Similar to Comparative Example 2, a white resist film having a thickness of 30 μm was formed in a solid shape on the substrate.
Next, the frame-like barriers and structures of 4 rows × 4 columns with a width of 30 μm and a pitch of 50 μm are formed into a frame-like structure of 4 rows × 4 columns with a width of 30 μm and a pitch of 40 μm. Simultaneous exposure using a photomask. In addition, the exposure amount of the first region and the second region was set to 300 mJ / cm ² as in Comparative Example 2.

Next, it developed for 1 minute with the alkali developing solution.
When the substrate after development was observed with an optical microscope, a part of the structure formed in the second region was twisted and peeled off, but the barrier formed in the first region was twisted and peeled off. It did not occur. This is because the proportion of the structure per unit area is increased by narrowing the pitch of the structure, and as a result, the stress can be dispersed efficiently. Note that the pitch and width of the structure do not need to be uniform over the entire second region, and may be appropriately changed according to the embodiment.

(Example 6)
(Example in which the width of the structure is increased in Comparative Example 2)
FIG. 21A is a diagram illustrating a cross-sectional structure of the barrier pattern substrate of Example 6 along the line AA ′ in FIG. FIG. 21B is a diagram illustrating a planar structure of the barrier pattern substrate of the sixth embodiment.

Similar to Comparative Example 2, a white resist film having a thickness of 30 μm was formed on the substrate 300 in a solid shape.
Next, the first region M1 was exposed using a light shielding mask for producing 4 rows × 4 columns of frame-shaped barriers 303 with a width of 30 μm and a pitch of 50 μm. Note that a photomask in which the width of the barrier 303 positioned at the boundary with the second region M2 is 60 μm was used.
Next, the structure 306 formed in the second region M2 was exposed using a mask different from the mask that exposed the first region M1 so as to form a frame shape of 4 rows × 4 columns. At this time, a photomask designed so that the width of the structure 306 was 60 μm and the pitch was 50 μm was used. In addition, the exposure amount of the 1st area | region M1 and the 2nd area | region M2 was 300 mJ / cm < ² > like Example 1. FIG.

Next, it developed for 1 minute with the alkali developing solution.
When the substrate after development was observed with an optical microscope, a part of the structure 306 formed in the second region M2 was twisted and peeled off, but the barrier 303 formed in the first region M1 was There was no twist or peeling.

(Example 7)
A green phosphor layer having a thickness of 20 μm was patterned using the substrate produced in Example 6.
The green phosphor layer is formed by first adding 30 g of green phosphor Ba ₂ SiO ₄ : Eu ^{2+ having} an average particle size of 4 μm and 30 g of a 10 wt% aqueous solution of polyvinyl alcohol, and stirring the green phosphor forming coating solution by a disperser. Produced.
Next, the substrate was washed with UV / O ₃ and then subjected to fluorine plasma treatment to impart lyophobicity to the barrier and impart lyophilicity to the glass substrate.
Next, the green phosphor-forming coating solution prepared in advance was applied by patterning into a frame-shaped barrier provided on the substrate by a dispenser method. Then, it heat-dried for 4 hours in vacuum oven (200 degreeC, 10 mmHg conditions), the green fluorescent substance layer was formed, and the fluorescent substance substrate was completed.

  Finally, as a result of measuring the luminance at 25 ° C. of 450 nm light with a blue LED as an excitation light source using a commercially available luminance meter (BM-7: manufactured by Topcontec House Co., Ltd.), A brightness improvement of 1.2 times with respect to Example 2 was observed. Since the light emission from the phosphor layer is isotropic, the fluorescent component directed to the side of the phosphor layer is lost in the second embodiment. On the other hand, in Example 7, the fluorescent component directed to the side of the phosphor layer is scattered by the white barrier and returned to the phosphor layer, and the light can be reused by changing the light traveling direction to the light extraction direction. . Therefore, it is considered that the luminance can be further improved than that of the second embodiment by adopting the structure as in the seventh embodiment.

  The material constituting the barrier may be a metal such as silver or aluminum that utilizes light reflection instead of light scattering. Further, the entire barrier need not be made of a light scattering or light reflecting material, and it is sufficient that a film having light scattering or light reflecting properties is formed at least on the surface of the barrier.

  Further, in Example 7, the fluorescent component directed to the side from the phosphor layer is scattered by the barrier and can be reused, but the fluorescent component directed backward from the phosphor layer (excitation light incident side of the phosphor layer) In this embodiment, the loss of the fluorescent component toward) becomes a loss. Therefore, in order to further improve the light extraction efficiency, it is preferable to provide a wavelength selective transmission / reflection film that transmits excitation light and reflects fluorescence on the excitation light incident surface side of the phosphor layer. Examples of the wavelength selective transmission / reflection film include a dielectric multilayer film, a metal thin film glass, an inorganic material substrate made of quartz, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, and the like. It is not limited to.

  Further, a film that flattens the excitation light incident surface side of the phosphor substrate may be formed before the wavelength selective transmission / reflection film is bonded to the phosphor substrate. Such a planarizing film can be formed using a known material. Examples thereof include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material. Examples of the method for forming the planarizing film include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method. However, the present embodiment is not limited to these materials and the forming method. Further, the planarization film may have a single layer structure or a multilayer structure.

  In addition, the adhesive used for bonding the wavelength selective transmission / reflection film and the phosphor substrate may be filled in the entire area between the wavelength selection transmission / reflection film and the phosphor substrate, or the phosphor substrate and the wavelength selection / transmission reflection film. You may form in frame shape between. When the adhesive is formed in a frame shape, an inert gas or air or matching oil for adjusting the refractive index is interposed between the wavelength selective transmission / reflection film and the phosphor substrate.

(Example 8)
(Example of blue organic EL + phosphor system)
Using the substrate prepared in Example 6, a red phosphor layer, a green phosphor layer, and a blue scatterer layer were patterned with a film thickness of 20 μm to obtain a phosphor substrate.
First, adjustment of the red phosphor layer forming coating solution, the green phosphor layer forming coating solution, and the blue scatterer layer forming coating solution will be described.
Regarding the red phosphor layer forming coating solution, 30 g of 10 wt% polyvinyl alcohol aqueous solution was added to 30 g of red phosphor K ₅ Eu _2.5 (WO ₄ ) _6.25 having an average particle diameter of 4 μm, and the mixture was stirred by a disperser. A forming coating solution was prepared.

Regarding the green phosphor layer forming coating solution, 30 g of 10 wt% polyvinyl alcohol aqueous solution is added to 30 g of green phosphor Ba ₂ SiO ₄ : Eu ²⁺ having an average particle diameter of 4 μm, and stirred by a disperser to form a green phosphor layer A coating liquid was prepared.
For the blue scatterer layer-forming coating solution, 30 g of 10 wt% polyvinyl alcohol aqueous solution is added to 30 g of 1.5 μm silica particles (refractive index: 1.65), and the mixture is stirred by a disperser. A liquid was prepared.

Next, the substrate was washed with UV / O ₃ and then subjected to fluorine plasma treatment to impart lyophobicity to the barrier and impart lyophilicity to the glass substrate.
Next, the previously prepared red phosphor layer-forming coating solution, green phosphor layer-forming coating solution, and blue scatterer layer-forming coating solution are each dispensed to form a frame-shaped barrier provided on the substrate. A pattern was applied inside.
Then, it heat-dried for 4 hours in vacuum oven (200 degreeC, 10 mmHg conditions), and formed the 20-micrometer-thick red fluorescent substance layer, the green fluorescent substance layer, and the blue scatterer layer.

Next, in order to minimize the disproportion of the surface height of the phosphor substrate caused by the phosphor layer and the scatterer layer, and the barrier and the structure, the phosphor substrate is formed with a thickness of 20 μm by spin coating with an acrylic resin. The flattened layer was formed by applying to the entire surface of the film and heating at 120 ° C. for 30 minutes.
The phosphor substrate was completed through the above steps.

Next, a method for producing a blue organic EL element substrate used as a light source will be described.
On a glass substrate having a thickness of 0.7 mm, silver is formed by a sputtering method so as to have a film thickness of 100 nm to form a reflective film, and indium-tin oxide (ITO) is formed thereon so as to have a film thickness of 20 nm. A film was formed by sputtering, and a reflective electrode (anode) was formed as a first electrode made of a laminated film of silver and ITO. The first electrode was patterned in a stripe shape by a conventional photolithography method so that the width was 30 μm and the pitch was 50 μm.

Next, SiO ₂ was laminated on the substrate by 200 nm by a sputtering method, and was patterned by a conventional photolithography method so as to cover only the edge portion of the first electrode, thereby forming an edge cover. Here, the short side is covered with SiO ₂ by 2 μm from the end of the first electrode. This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.

Next, this substrate was fixed to a substrate holder in a resistance heating vapor deposition apparatus, the pressure was reduced to a vacuum of 1 × 10 ⁻⁴ Pa or less, and an organic layer including an organic light emitting layer was formed by a resistance heating vapor deposition method.
First, as a hole injection material, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used, and a hole injection layer having a thickness of 100 nm was formed by a resistance heating vapor deposition method.
Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A hole transport layer having a thickness of 40 nm was formed by resistance heating evaporation.

  Next, a blue organic light emitting layer (thickness: 30 nm) was formed on the hole transport layer. This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III ) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 Å / sec and 0.2 Å / sec.

Next, a hole blocking layer (thickness: 10 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
Next, an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq3).
Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).

Thereafter, a semitransparent electrode was formed as the second electrode.
First, the above substrate was fixed to a metal deposition chamber.
Next, a shadow mask for forming a second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape with a width of 30 μm and a pitch of 50 μm in a direction facing the stripe of the first electrode) and a substrate Alignment and formation of magnesium silver by co-evaporation in a desired pattern using a vacuum deposition method on the surface of the electron injection layer so that magnesium and silver each have a deposition rate of 0.1 Å / sec 0.9 Å / sec ( (Thickness: 1 nm).

  Furthermore, silver was formed in a desired pattern (thickness: 19 nm) at a deposition rate of 1 cm / sec for the purpose of emphasizing the interference effect and preventing a voltage drop due to the wiring resistance of the second electrode. . Thereby, the second electrode was formed. Here, as an organic EL element, a microcavity effect (interference effect) appears between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and the front luminance can be increased. . As a result, it is possible to more efficiently propagate light emission energy from the organic EL element to the phosphor layer. Similarly, the emission peak was adjusted to 460 nm and the half-value width to 50 nm by the microcavity effect.

Next, an inorganic protective layer made of SiO _{2 having} a thickness of 3 μm was formed by patterning from the edge of the display portion to the sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method. Thus, a substrate made of a blue organic EL element was produced.
Next, the organic EL element substrate and the phosphor substrate produced as described above were aligned with an alignment marker formed outside the display unit. In addition, thermosetting resin was apply | coated to the fluorescent substance board | substrate in advance, both board | substrates were closely_contact | adhered via the thermosetting resin, and it hardened | cured by heating at 80 degreeC for 2 hours. In addition, said bonding process was performed in the dry air environment (water content: -80 degreeC) in order to prevent deterioration by the water | moisture content of organic EL.
Finally, an organic EL display device was completed by connecting terminals formed in the periphery to an external power source.

  Here, a blue light emitting organic EL is used as an excitation light source that can be arbitrarily switched by applying a desired current to a desired striped electrode from an external power source, and blue light is emitted from each of the red phosphor layer and the green phosphor layer as red light. The green light was converted to isotropic light emission of red and green. Also, isotropic blue light emission could be obtained through the blue scatterer layer. As a result, it was possible to obtain a good image and a good viewing angle characteristic in full color display.

Example 9
(Example of active drive blue organic EL + phosphor system)
The phosphor substrate was produced in the same manner as in Example 8.
An amorphous silicon semiconductor film was formed on a 100 × 100 mm square glass substrate by PECVD.
Subsequently, a polycrystalline silicon semiconductor film was formed by performing a crystallization treatment.
Next, the polycrystalline silicon semiconductor film was patterned into a plurality of islands using a photolithography method. Subsequently, a gate insulating film and a gate electrode layer were formed in this order on the patterned polycrystalline silicon semiconductor layer, and patterning was performed using a photolithography method.

Thereafter, the patterned polycrystalline silicon semiconductor film was doped with an impurity element such as phosphorus to form a source region and a drain region, thereby manufacturing a TFT element.
Thereafter, a planarizing film was formed. As the planarizing film, a silicon nitride film formed by PECVD and an acrylic resin layer formed by a spin coater were laminated in this order.

Next, after forming a silicon nitride film, the silicon nitride film and the gate insulating film were etched together to form contact holes that communicated with the source region and the drain region, and then a source wiring was formed.
Thereafter, an acrylic resin layer was formed, and a contact hole communicating with the drain region was formed at the same position as the contact hole of the drain region drilled in the gate insulating film and the silicon nitride film, thereby completing the active matrix substrate. The function as a planarizing film is realized by an acrylic resin layer. Note that the capacitor for setting the gate potential of the TFT to a constant potential is formed by interposing an insulating film such as an interlayer insulating film between the drain of the switching TFT and the source of the driving TFT.

  On the active matrix substrate, the driving TFT, the first electrode of the red light emitting organic EL element, the first electrode of the green light emitting organic EL element, and the first electrode of the blue light emitting organic EL element pass through the planarization layer. Contact holes are provided to electrically connect the two. Next, the first electrode (anode) of each pixel is formed by sputtering so as to be electrically connected to the contact hole provided through the planarization layer connected to the TFT for driving each light emitting pixel. Has been. The first electrode is formed by laminating Al (aluminum) with a thickness of 150 nm and IZO (indium oxide-zinc oxide) with a thickness of 20 nm. Next, the first electrode was patterned into a shape corresponding to each pixel by a conventional photolithography method. Here, the area of the first electrode was set to 70 μm × 70 μm. Further, the display unit is 80 × 80 mm with respect to a 100 × 100 mm square substrate, 2 mm wide sealing areas are provided on the top, bottom, left and right of the display unit, and 2 mm each outside the sealing area on the short side. The terminal extraction part was provided. On the long side, a 2 mm terminal lead-out portion was provided on the side to be bent.

Next, 200 nm of SiO ₂ for the first electrode was laminated by sputtering, and was patterned by a conventional photolithography method so as to cover the edge portion of the first electrode. Here, an edge cover is formed by covering four sides with 2 μm from the end of the first electrode with SiO ₂ .
Next, the above active matrix substrate was cleaned. In the cleaning of the active matrix substrate, for example, ultrasonic cleaning using acetone and IPA was performed for 10 minutes, and then UV-ozone cleaning was performed for 30 minutes.

Next, this board | substrate was fixed to the board | substrate holder in an in-line type resistance heating vapor deposition apparatus, and it pressure-reduced to the vacuum of 1 * 10 <^-4> Pa or less, and formed each organic layer into a film.
First, as a hole injection material, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used, and a hole injection layer having a thickness of 100 nm was formed by a resistance heating vapor deposition method.
Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.

  Next, a blue organic light emitting layer (thickness: 30 nm) was formed on the hole transport layer. This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III ) (FIrpic) (blue phosphorescent light-emitting dopant) was prepared by co-evaporation so that the respective deposition rates were 1.5 Å / sec and 0.2 Å / sec.

Next, a hole blocking layer (thickness: 10 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
Next, an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq3).
Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).

Thereafter, a semitransparent electrode was formed as the second electrode.
First, the substrate was fixed to a metal deposition chamber.
Next, the shadow mask for forming the second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 2 mm in a direction facing the stripe of the first electrode) and the substrate are aligned. Using a vacuum deposition method on the surface of the electron injection layer, magnesium silver by co-evaporation is formed in a desired pattern so that magnesium and silver have a deposition rate of 0.1 Å / sec and 0.9 Å / sec, respectively ( (Thickness: 1 nm).
Furthermore, in order to emphasize the interference effect and to prevent a voltage drop due to the wiring resistance of the second electrode, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm). did. Thereby, the second electrode was formed.

  Here, as an organic EL element, a microcavity effect (interference effect) appears between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and the front luminance can be increased. . As a result, it is possible to more efficiently propagate light emission energy from the organic EL element to the phosphor layer and the orientation improving layer. Similarly, the emission peak was adjusted to 460 nm and the half value width to 50 nm by the microcavity effect.

Next, an inorganic protective layer made of SiO _{2 having} a thickness of 3 μm was formed by patterning from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method. Thus, an active drive type organic EL element substrate was produced.

  Next, the active drive type organic EL element substrate and the phosphor substrate produced as described above were aligned with an alignment marker formed outside the display unit. In addition, the thermosetting resin was previously apply | coated to the fluorescent substance board | substrate, both board | substrates were closely_contact | adhered via the thermosetting resin, and it hardened | cured by heating at 90 degreeC for 2 hours. In addition, said bonding process was performed in the dry air environment (water content: -80 degreeC) in order to prevent deterioration by the water | moisture content of organic EL.

Next, a polarizing plate was attached to the substrate in the light extraction direction to complete an active drive organic EL.
Finally, the terminal formed on the short side was connected to the power supply circuit via the source driver, and the terminal formed on the long side was connected to the external power supply via the gate driver.
Thereby, an active drive type organic EL display having a display portion of 80 × 80 mm was completed.

  Here, a blue light emitting organic EL is arbitrarily switched by applying a desired current to each pixel by an external power source, and blue light is converted into red light and green light in the red phosphor layer and the green phosphor layer, respectively. Red and green isotropic luminescence was obtained. Further, isotropic blue light emission was obtained through the blue scatterer layer, and a good image and an image with good viewing angle characteristics could be obtained by full color display.

(Example 10)
(Example of blue LED + phosphor system)
The phosphor substrate was produced in the same manner as in Example 8.
Using TMG (trimethylgallium) and NH ₃ , a buffer layer made of GaN was grown at a temperature of 550 ° C. to a thickness of 60 nm on the C surface of the sapphire substrate set in the reaction vessel.
Next, the temperature was raised to 1050 ° C., and an n-type contact layer made of Si-doped n-type GaN was grown to a thickness of 5 μm using SiH ₄ gas in addition to TMG and NH ₃ .
Subsequently, TMA (trimethylaluminum) was added to the source gas, and a second cladding layer made of a Si-doped n-type Al _0.3 Ga _0.7 N layer was grown at a thickness of 0.2 μm at 1050 ° C.

Next, the temperature is lowered to 850 ° C., and a first n-type cladding layer made of Si-doped n-type In _0.01 Ga _0.99 N is formed to a thickness of 60 nm using TMG, TMI (trimethylindium), NH ₃ and SiH _4. Grown up.
Subsequently, an active layer made of non-doped In _0.05 Ga _0.95 N was grown at a thickness of 5 nm at 850 ° C. using TMG, TMI and NH ₃ . Further, in addition to TMG, TMI and NH ₃ , a new p-type cladding layer made of Mg-doped p-type In _0.01 Ga _0.99 N at a temperature of 850 ° C. using CPMg (cyclopentadienylmagnesium) is a 60 nm film. Grow in thickness.

Next, the temperature was raised to 1100 ° C., and a second p-type cladding layer made of Mg-doped p-type Al _0.3 Ga _0.7 N was grown to a thickness of 150 nm using TMG, TMA, NH ₃ and CPMg.
Subsequently, using TMG, NH ₃ and CPMg at a temperature of 1100 ° C., a p-type contact layer made of Mg-doped p-type GaN was grown to a thickness of 600 nm.
After the above operation was completed, the temperature was lowered to room temperature, the wafer was taken out of the reaction vessel, and the wafer was annealed at 720 ° C. to reduce the resistance of the p-type layer.

Next, a mask having a predetermined shape was formed on the surface of the uppermost p-type contact layer, and etching was performed until the surface of the n-type contact layer was exposed. After the etching, a negative electrode made of titanium (Ti) and aluminum (Al) was formed on the surface of the n-type contact layer, and a positive electrode made of nickel (Ni) and gold (Au) was formed on the surface of the p-type contact layer.
After the electrodes are formed, the wafer is separated into 350 μm square LED chips, and the prepared LED chips are fixed with a UV curable resin on a substrate on which wiring for connecting to a separately prepared external circuit is formed. The upper wiring was electrically connected to produce a light source substrate made of a blue LED.

Next, the light source substrate and the phosphor substrate produced as described above were aligned with an alignment marker formed outside the display unit. In addition, the thermosetting resin was apply | coated to the fluorescent substance board | substrate in advance, both board | substrates were closely_contact | adhered through the thermosetting resin, and it hardened | cured by heating at 80 degreeC for 2 hours. In addition, said bonding process was performed in dry air environment (water content: -80 degreeC).
Finally, the LED display device was completed by connecting terminals formed in the periphery to an external power source.

  Here, a blue LED was used as an excitation light source that can be arbitrarily switched by applying a desired current to a desired striped electrode from an external power source. In the red phosphor layer and the green phosphor layer, blue light was converted into red light and green light, respectively, and isotropic emission of red and green was obtained. Also, isotropic blue light emission could be obtained through the blue scatterer layer. As a result, it was possible to obtain a good image by full color display and a good viewing angle characteristic.

  The present invention can be used for a phosphor substrate and various display devices using the phosphor substrate.

  1, 11, 14, 18, 22, 26, 30, 33 ... phosphor substrate, 2 ... substrate, 3R, 3G, 3B ... phosphor layer, 4, 4A, 4B, 301, 303 ... barrier, 5, 12, 15, 19, 23, 27, 34, 35, 36, 37, 302, 304, 305, 306 ... structure, 82, 113 ... display device.

Claims (14)

A substrate,
A phosphor layer provided on the substrate and emitting light by incident excitation light;
A barrier surrounding a side surface of the phosphor layer,
The substrate comprises a first region having the phosphor layer and the barrier; and a second region located outside the first region;
The second region is provided with a structure formed by all members or a part of members constituting the barrier formed in the first region, and the barrier and at least a part of the structure are provided. A phosphor substrate characterized in that is a continuum. The phosphor layer includes a plurality of phosphor layers that emit light of different colors,
The phosphor substrate according to claim 1, wherein the barrier is provided on each side surface of the plurality of phosphor layers.   The phosphor substrate according to claim 1, wherein the structure is formed with the same width as the barrier formed in the first region.   The phosphor substrate according to claim 1, wherein at least a part of the structure is formed with a width larger than a barrier formed in the first region.   3. The phosphor substrate according to claim 1, wherein the structure is formed in the entire second region without a gap.   The phosphor substrate according to any one of claims 1 to 5, wherein the barrier has at least one of a light scattering property and a light reflecting property.   The phosphor substrate according to claim 1, wherein a light shielding layer is provided in a region surrounded by the structure in the second region. The phosphor substrate according to any one of claims 1 to 7,
A display device comprising: a light source having a light emitting element that emits excitation light that irradiates the phosphor layer. A plurality of pixels including at least a red pixel for displaying with red light, a green pixel for displaying with green light, and a blue pixel for displaying with blue light;
Ultraviolet light as the excitation light is emitted from the light source,
As the phosphor layer, a red phosphor layer that emits red light using the ultraviolet light as the excitation light is provided on the red pixel, and a green phosphor layer that emits green light using the ultraviolet light as the excitation light on the green pixel The display device according to claim 8, wherein a blue phosphor layer that emits blue light using the ultraviolet light as the excitation light is provided in the blue pixel. A plurality of pixels including at least a red pixel for displaying with red light, a green pixel for displaying with green light, and a blue pixel for displaying with blue light;
Blue light as the excitation light is emitted from the light source,
As the phosphor layer, a red phosphor layer that emits red light using the blue light as the excitation light is provided on the red pixel, and a green phosphor layer that emits green light using the blue light as the excitation light on the green pixel Is provided,
The display device according to claim 8, wherein the blue pixel is provided with a scattering layer that scatters the blue light.   The light source is an active matrix drive type light source including a plurality of light emitting elements provided corresponding to the plurality of pixels, and a plurality of driving elements that respectively drive the plurality of light emitting elements. The display device according to claim 9 or 10.   12. The display device according to claim 8, wherein the light source is any one of a light emitting diode, an organic electroluminescence element, and an inorganic electroluminescence element. The light source is a planar light source that emits light from a light exit surface;
13. A liquid crystal element capable of controlling the transmittance of light emitted from the planar light source for each pixel is provided between the planar light source and the phosphor substrate. The display device according to any one of the above.   The display device according to claim 8, wherein the light source has directivity.

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