JP2013217812A - Vibration piece, manufacturing method of vibration piece, vibration device and electronic apparatus - Google Patents

Abstract

An object of the present invention is to provide a resonator element and a method of manufacturing the resonator element that can carry out wiring over an upper electrode layer while preventing adverse effects on the characteristics of the resonator element, and to provide a reliable method including the resonator element. To provide high vibration devices and electronic equipment.
A sensor element of the present invention includes a base 21, a vibrating arm 22 extended from the base 21, a vibrating arm 22, a first electrode layer 511, a second electrode layer 513, and a piezoelectric body. A drive unit 51 having a layer 512, a wiring 62 having a portion drawn out from the second electrode layer 513 and provided along the side surface of the piezoelectric layer 512, and the piezoelectric layer 512 and the first electrode layer 511. An insulating layer 61 provided between the side surface and the wiring 62, where the dielectric constant of the piezoelectric layer 512 is εp, and the dielectric constant of the insulating layer 61 is εi, and the relationship εp> εi is satisfied. .
[Selection] Figure 3

Description

  The present invention relates to a resonator element, a method for manufacturing the resonator element, a resonator device, and an electronic apparatus.

The vibration piece is used for, for example, vehicle body control in a vehicle, vehicle position detection of a car navigation system, vibration control correction (so-called camera shake correction) of a digital camera, a video camera, etc., and detects physical quantities such as angular velocity and acceleration. Sensor elements are known (see, for example, Patent Document 1).
For example, the angular velocity sensor described in Patent Document 1 includes a tuning fork-shaped substrate having two arms, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer are stacked in this order on each arm. . In such an angular velocity sensor, a part of the upper electrode layer is separated into an excitation electrode portion and a detection electrode portion.

In such an angular velocity sensor described in Patent Document 1, a voltage is applied between the excitation electrode portion and the lower electrode layer to vibrate each arm portion in a direction approaching or separating from each other. In this state, when an angular velocity about the axis along the extending direction of each arm portion is received, each arm portion bends in the direction orthogonal to the above-described vibration direction due to Coriolis force, and a charge corresponding to the amount of the bending. Is detected from the detection electrode section. Based on the detected charge, the angular velocity can be detected.
By the way, in such an angular velocity sensor, it may be necessary to electrically connect the upper electrode layer to an electrode installed directly on the substrate via a wiring. In such a case, it is desirable that such wiring does not adversely affect characteristics such as drive efficiency and detection sensitivity.

JP 2003-152232 A

  An object of the present invention is to provide a vibrating piece and a method for manufacturing the vibrating piece that can carry out wiring over the upper electrode layer while preventing adverse effects on the characteristics of the vibrating piece, and includes the vibrating piece. The object is to provide a highly reliable vibration device and electronic apparatus.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
[Application Example 1]
The resonator element according to the invention includes a base,
A vibrating arm extending from the base;
A first lower electrode layer provided on the vibrating arm; a first upper electrode layer provided on a side opposite to the vibrating arm with respect to the first lower electrode layer; and the first lower electrode layer and the first lower electrode layer. A first piezoelectric element having a first piezoelectric layer provided between the upper electrode layer;
A wiring connected to the first upper electrode layer and having a portion provided along a side surface of the first piezoelectric layer;
An insulator layer provided between a side surface of the first piezoelectric layer and the first lower electrode layer and the wiring;
When the dielectric constant of the first piezoelectric layer is εp and the dielectric constant of the insulator layer is εi,
It is characterized by satisfying the relationship of εp> εi.

According to the resonator element configured as described above, the wiring over the first upper electrode layer on the piezoelectric layer can be performed while the insulating layer prevents the wiring and the first lower electrode layer from being short-circuited. .
In particular, since the dielectric constant of the insulator layer is smaller than the dielectric constant of the first piezoelectric layer, the parasitic capacitance between the wiring and the first lower electrode layer can be reduced. Therefore, it is possible to prevent an adverse effect on the characteristics of the resonator element due to the wiring.

[Application Example 2]
In the resonator element according to the aspect of the invention, the resonator element includes a terminal provided on the base.
It is preferable that the terminal is electrically connected to the wiring.
Thereby, it can energize to the 1st upper electrode layer using the terminal installed directly in the base, without going through the 1st piezoelectric material layer. In addition, since the terminal installed directly on the base without the first piezoelectric layer is excellent in adhesion to the base, it can be prevented from being peeled off even if wire bonding is performed, and the reliability is improved. Excellent.

[Application Example 3]
In the resonator element according to the aspect of the invention, the resonator element includes a detection unit that detects bending vibration of the vibrating arm.
It is preferable that the detection unit is the piezoelectric element.
According to such a detection unit, since the parasitic capacitance between the wiring and the first lower electrode layer can be reduced, it is possible to prevent a decrease in detection sensitivity due to the wiring.

[Application Example 4]
In the resonator element according to the aspect of the invention, the insulator layer includes a portion provided on the first upper electrode layer side with respect to the first piezoelectric layer.
It is preferable that a part of the first upper electrode layer is interposed between the portion and the first piezoelectric layer.
Thereby, the electrode area of the first upper electrode layer can be increased. Therefore, the electric field efficiency of the first piezoelectric element can be made excellent.

[Application Example 5]
In the resonator element according to the aspect of the invention, the insulator layer includes a portion provided on the first upper electrode layer side with respect to the first piezoelectric layer.
It is preferable that the first upper electrode layer does not exist between the portion and the first piezoelectric layer.
Thereby, at the time of manufacturing the resonator element, after forming the insulator layer, the first upper electrode layer and the wiring can be collectively formed. Therefore, the manufacturing process of the resonator element can be simplified.

[Application Example 6]
In the resonator element according to the aspect of the invention, it is preferable that the insulator layer is thicker than the first lower electrode layer.
Thereby, the side surface of the first lower electrode layer can be covered with the insulator layer easily and reliably.

[Application Example 7]
In the resonator element according to the aspect of the invention, it is preferable that the side surface of the first piezoelectric layer is inclined with respect to a main surface of the first lower electrode layer.
Thereby, the disconnection of the wiring resulting from the level | step difference by a 1st piezoelectric material layer, and the damage to an insulator layer can be prevented. Moreover, the film-forming property at the time of forming a wiring or an insulator layer can be improved.

[Application Example 8]
In the resonator element according to the aspect of the invention, it is preferable that the first upper electrode layer and the wiring are made of the same material.
Accordingly, the first upper electrode layer and the wiring can be formed at a time when the resonator element is manufactured. Therefore, the manufacturing process of the resonator element can be simplified.

[Application Example 9]
In the resonator element according to the aspect of the invention, it is preferable that the first upper electrode layer and the wiring are integrated.
Accordingly, the first upper electrode layer and the wiring can be formed at a time when the resonator element is manufactured. Therefore, the manufacturing process of the resonator element can be simplified.
[Application Example 10]
In the resonator element according to the aspect of the invention, the second lower electrode layer provided on the vibrating arm, the second upper electrode layer provided on the opposite side to the vibrating arm with respect to the second lower electrode layer, and the first A second piezoelectric element having a second piezoelectric layer provided between two lower electrode layers and the second upper electrode layer;
It is preferable that the wiring and the second lower electrode layer are electrically connected.
According to such a first piezoelectric element and a second piezoelectric element (a pair of driving units), it is possible to reduce the parasitic capacitance between the wiring and the first lower electrode layer. Can be prevented.

[Application Example 11]
A method of manufacturing a resonator element according to the invention,
Forming the first lower electrode layer, the first piezoelectric layer, and the first upper electrode layer;
Forming the insulator layer;
Forming the wiring.

According to such a method for manufacturing a resonator element, it is possible to perform the wiring over the first upper electrode layer while preventing an adverse effect on the characteristics of the resonator element.
Moreover, since the first upper electrode layer is formed before the formation of the insulator layer, the electrode area of the first upper electrode layer can be increased. Therefore, the electric field efficiency of the obtained first piezoelectric element can be made excellent.

[Application Example 12]
The vibrating device of the present invention includes the vibrating piece of the present invention.
Thereby, the vibration device excellent in reliability can be provided.
[Application Example 13]
An electronic apparatus according to the present invention includes the resonator element according to the present invention.
Thereby, an electronic device with excellent reliability can be provided.

It is a typical sectional view showing a schematic structure of a sensor device (vibration device) concerning a 1st embodiment of the present invention. It is a top view of the sensor device shown in FIG. It is a top view which shows the sensor element (vibration piece) with which the sensor device shown in FIG. 1 was equipped. It is the sectional view on the AA line in FIG. (A) is the BB sectional view taken on the line in FIG. 3, (b) is CC sectional view taken on the line in FIG. It is a figure for demonstrating the manufacturing method (an example of the manufacturing method of the vibration piece of this invention) of the sensor element shown in FIG. It is a figure for demonstrating the manufacturing method (an example of the manufacturing method of the vibration piece of this invention) of the sensor element shown in FIG. It is a figure for demonstrating the sensor element (vibration piece) which concerns on 2nd Embodiment of this invention. It is a figure for demonstrating the sensor element (vibration piece) which concerns on 3rd Embodiment of this invention. It is a top view which shows the sensor element (vibration piece) which concerns on 4th Embodiment of this invention. It is the DD sectional view taken on the line in FIG. It is a figure for demonstrating operation | movement of the sensor element shown in FIG. It is a figure for demonstrating the sensor element which concerns on 5th Embodiment of this invention. It is a figure for demonstrating the sensor element which concerns on 6th Embodiment of this invention. 1 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which an electronic apparatus of the present invention is applied. It is a perspective view which shows the structure of the mobile telephone (PHS is also included) to which the electronic device of this invention is applied. It is a perspective view which shows the structure of the digital still camera to which the electronic device of this invention is applied.

Hereinafter, a resonator element, a method of manufacturing a resonator element, a resonator device, and an electronic apparatus according to the present invention will be described in detail based on embodiments shown in the accompanying drawings. Hereinafter, a case where the present invention is applied to a vibration piece of a sensor will be described as an example. However, the present invention is not limited to this, and can be applied to a vibration piece of an oscillator, for example.
<First Embodiment>
First, a first embodiment of the present invention will be described.

  1 is a schematic cross-sectional view showing a schematic configuration of a sensor device (vibration device) according to a first embodiment of the present invention, FIG. 2 is a plan view of the sensor device shown in FIG. 1, and FIG. FIG. 4 is a cross-sectional view taken along the line AA in FIG. 3, and FIG. 5A is a cross-sectional view taken along the line BB in FIG. 3. FIG. 5B is a cross-sectional view taken along line CC in FIG.

  In the following, for convenience of explanation, in FIG. 1 to FIG. 5, the x axis, the y axis, and the z axis are illustrated as three axes orthogonal to each other, and the tip side of the illustrated arrow is the “+ side”. The base end side is defined as “− side”. A direction parallel to the x-axis is referred to as an “x-axis direction”, a direction parallel to the y-axis is referred to as a “y-axis direction”, and a direction parallel to the z-axis is referred to as a “z-axis direction”. The upper side in the middle is also called “upper”, and the −z side (lower side in FIG. 1) is also called “lower”.

(Sensor device)
A sensor device 1 shown in FIGS. 1 and 2 is a gyro sensor that detects angular velocity.
Such a sensor device 1 can be used for, for example, camera shake correction of an imaging device, posture detection of a vehicle or the like in a mobile navigation system using a GPS (Global Positioning System) satellite signal, posture control, and the like.
As shown in FIGS. 1 and 2, the sensor device 1 includes a sensor element 2, an IC chip 3, and a package 4 that houses the sensor element 2 and the IC chip 3. The IC chip 3 may be provided outside the package 4 or may be omitted depending on the device in which the sensor device 1 is incorporated.

Hereinafter, each part which comprises the sensor device 1 is demonstrated sequentially.
[Sensor element]
The sensor element 2 is a gyro sensor element (vibration piece) that detects an angular velocity around one axis.
As shown in FIG. 3, the sensor element 2 includes a vibrating body 20, drive units 51 to 54, detection units 55 and 56, and terminals 59 a to 59 f provided on the vibrating body 20.

<Vibrating body>
The vibrating body 20 includes a base portion 21 and two (one pair) vibrating arms 22 and 23.
The two vibrating arms 22 and 23 are provided to extend from the base portion 21 so as to be parallel to each other. More specifically, the two vibrating arms 22 and 23 extend from the base portion 21 in the y-axis direction (+ y side) and are provided side by side in the x-axis direction.

Each of the vibrating arms 22 and 23 has a longitudinal shape, and an end portion (base end portion) on the base portion 21 side is a fixed end, and an end portion (tip end portion) opposite to the base portion 21 is a free end.
Moreover, the cross section of each vibrating arm 22 and 23 is rectangular (see FIG. 4). Note that the cross-sectional shape of each vibrating arm 22, 23 is not limited to a quadrangle, and for example, by forming grooves along the y-axis direction on the upper and lower surfaces of each vibrating arm 22, 23, an H-shape It may be done.

Note that, if necessary, a mass portion (hammer head) having a larger cross-sectional area (width) than the base end portion may be provided at each distal end portion of the vibrating arms 22 and 23. In this case, the vibrating body 20 can be made smaller, and the resonance frequency of the vibrating arms 22 and 23 can be further lowered.
Further, an adjustment film (weight) for adjusting the resonance frequency of the vibrating arms 22 and 23 may be provided at the distal ends of the vibrating arms 22 and 23.
The constituent material of the vibrator 20 is not particularly limited as long as it can exhibit desired vibration characteristics, and various piezoelectric materials and various non-piezoelectric materials can be used.

  For example, the piezoelectric material constituting the vibrating body 20 includes quartz, lithium tantalate, lithium niobate, lithium borate, barium titanate, and the like. In particular, quartz (X cut plate, AT cut plate, Z cut plate, etc.) is preferable as the piezoelectric material constituting the vibrating body 20. If the vibrating body 20 is made of quartz, the vibration characteristics (particularly frequency temperature characteristics) of the vibrating body 20 can be made excellent. Moreover, the vibrating body 20 can be formed with high dimensional accuracy by etching.

  Further, examples of the non-piezoelectric material constituting the vibrating body 20 include silicon and quartz. In particular, silicon is preferable as the non-piezoelectric material constituting the vibrating body 20. When the vibrating body 20 is made of silicon, the vibrating body 20 having excellent vibration characteristics can be realized at a relatively low cost. In addition, the vibrator 20 can be formed with high dimensional accuracy by etching using a known fine processing technique.

Such a vibrating arm 22 of the vibrating body 20 is provided with a pair of driving units 51 and 52 and a detecting unit 55. Similarly, the vibrating arm 23 has a pair of driving units 53 and 54 and a detecting unit 56. Is provided.
In the present embodiment, an insulator layer 24 is provided on the upper surface of the vibrating body 20 as shown in FIG. Thereby, the short circuit between each part of the drive parts 51-54 and the detection parts 55 and 56 can be prevented.

The insulator layer 24 is made of, for example, SiO ₂ (silicon oxide), Al ₂ O ₃ (aluminum oxide), SiN (silicon nitride), or the like. The method for forming the insulator layer 24 is not particularly limited, and a known film formation method can be used. For example, when the vibrating body 20 is made of silicon, the insulator layer 24 made of SiO ₂ can be formed by thermally oxidizing the upper surface of the vibrating body 20.

Hereinafter, the drive units 51 to 54 and the detection units 55 and 56 will be sequentially described in detail.
"Drive part"
First, the drive parts 51-54 are demonstrated.
Each of the pair of drive units 51 and 52 is a piezoelectric element (first piezoelectric element) that causes the vibrating arm 22 to bend and vibrate in the x-axis direction. Similarly, the pair of drive units 53 and 54 are piezoelectric elements (first piezoelectric elements) that cause the vibrating arm 23 to bend and vibrate in the x-axis direction, respectively.

The pair of drive units 51 and 52 are provided with a drive unit 51 on one side (right side in FIG. 3) and driven on the other side (left side in FIG. 3) in the width direction (x-axis direction) of the vibrating arm 22. A part 52 is provided.
Similarly, the pair of drive units 53 and 54 is provided with the drive unit 53 on one side (right side in FIG. 3) and the other side (left side in FIG. 3) in the width direction (x-axis direction) of the vibrating arm 23. A drive unit 54 is provided.

In the present embodiment, the drive units 51 and 52 are mainly provided in the proximal end portion of the vibrating arm 22. Similarly, the drive units 53 and 54 are mainly provided in the proximal end portion of the vibrating arm 23.
And each of the drive parts 51-54 is comprised so that it may expand-contract in a y-axis direction by electricity supply.
More specifically, as shown in FIG. 4, the driving unit 51 is provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 511 (first lower electrode layer) and the first electrode layer 511. The second electrode layer 513 (first upper electrode layer) and the piezoelectric layer 512 (first piezoelectric layer) provided between the first electrode layer 511 and the second electrode layer 513 are provided. Have. In other words, the drive unit 51 is configured by laminating the first electrode layer 511, the piezoelectric layer (piezoelectric thin film) 512, and the second electrode layer 513 on the vibrating arm 22 in this order.

  Similarly, the drive unit 52 is configured by laminating a first electrode layer 521, a piezoelectric layer (piezoelectric thin film) 522, and a second electrode layer 523 on the vibrating arm 22 in this order. The drive unit 53 is configured by laminating a first electrode layer 531, a piezoelectric layer (piezoelectric thin film) 532, and a second electrode layer 533 in this order on the vibrating arm 23. The drive unit 54 is configured by laminating a first electrode layer 541, a piezoelectric layer (piezoelectric thin film) 542, and a second electrode layer 543 on the vibrating arm 23 in this order.

  By using such driving units 51 to 54, even if the vibrating arms 22 and 23 themselves do not have piezoelectricity, or the vibrating arms 22 and 23 themselves have piezoelectricity, the polarization axis or crystal Even when the axial direction is not suitable for bending vibration in the x-axis direction, the vibrating arms 22 and 23 can be flexibly vibrated (driving vibration) in the x-axis direction relatively easily and efficiently. In addition, since the vibrating arms 22 and 23 are not subject to the presence of piezoelectricity and the direction of the polarization axis and the crystal axis, the range of selection of the constituent materials of the vibrating arms 22 and 23 is widened. Therefore, the vibrating body 20 having desired vibration characteristics can be realized relatively easily.

Hereinafter, each layer which comprises the drive part 51 is demonstrated sequentially. In addition, about the drive parts 52-53, since it is the same as that of the drive part 51, the description is abbreviate | omitted.
The first electrode layer 511 includes, for example, gold (Au), gold alloy, platinum (Pt), aluminum (Al), aluminum alloy, silver (Ag), silver alloy, chromium (Cr), chromium alloy, copper (Cu ), Molybdenum (Mo), niobium (Nb), tungsten (W), iron (Fe), titanium (Ti), cobalt (Co), zinc (Zn), zirconium (Zr), etc., ITO, ZnO It can form with transparent electrode materials, such as.

Among them, as a constituent material of the first electrode layer 511, it is preferable to use a metal (gold, gold alloy) or platinum mainly made of gold, and a metal (especially gold) mainly made of gold. More preferred.
Au is suitable as an electrode material because it has excellent conductivity (low electrical resistance) and excellent resistance to oxidation. Further, Au can be easily patterned by etching as compared with Pt. Furthermore, the orientation of the piezoelectric layer 512 can be improved by forming the first electrode layer 511 from gold or a gold alloy.

  The average thickness of the first electrode layer 511 is not particularly limited, but is preferably about 1 to 300 nm, and more preferably 10 to 200 nm, for example. As a result, the first electrode layer 511 has excellent conductivity as described above while preventing the first electrode layer 511 from adversely affecting the drive characteristics of the drive unit 51 and the vibration characteristics of the vibrating arm 22. It can be.

Note that a base layer having a function of preventing the first electrode layer 511 from peeling from the vibrating arm 22 may be provided between the first electrode layer 511 and the vibrating arm 22.
Such an underlayer is made of, for example, Ti, Cr or the like.
On the first electrode layer 511, a piezoelectric layer 512 is provided.
Examples of the constituent material (piezoelectric material) of the piezoelectric layer 512 include zinc oxide (ZnO), aluminum nitride (AlN), lithium tantalate (LiTaO ₃ ), lithium niobate (LiNbO ₃ ), and potassium niobate (KNbO). ₃ ), lithium tetraborate (Li ₂ B ₄ O ₇ ), barium titanate (BaTiO ₃ ), PZT (lead zirconate titanate) and the like.

In particular, it is preferable to use PZT as a constituent material of the piezoelectric layer 512. PZT (lead zirconate titanate) is excellent in c-axis orientation. Therefore, the CI value of the sensor element 2 can be reduced by configuring the piezoelectric layer 512 using PZT as a main material. Moreover, these materials can be formed into a film by the reactive sputtering method.
The average thickness of the piezoelectric layer 512 is preferably 50 to 3000 nm, and more preferably 200 to 2000 nm. Accordingly, it is possible to improve the drive characteristics of the drive unit 51 while preventing the piezoelectric layer 512 from adversely affecting the vibration characteristics of the vibrating arm 22.

A second electrode layer 513 is provided on the piezoelectric layer 512 (on the side opposite to the vibrating arm 22 of the piezoelectric layer 512).
The second electrode layer 513 includes, for example, gold (Au), gold alloy, platinum (Pt), aluminum (Al), aluminum alloy, silver (Ag), silver alloy, chromium (Cr), chromium alloy, copper (Cu ), Molybdenum (Mo), niobium (Nb), tungsten (W), iron (Fe), titanium (Ti), cobalt (Co), zinc (Zn), zirconium (Zr), and other metal materials, ITO, ZnO, etc. The transparent electrode material can be used.

The average thickness of the second electrode layer 513 is not particularly limited, but is preferably about 1 to 300 nm, and more preferably 10 to 200 nm, for example. Thus, the second electrode layer 513 is made excellent in conductivity while preventing the second electrode layer 513 from adversely affecting the drive characteristics of the drive unit 51 and the vibration characteristics of the vibrating arm 22. it can.
A function of protecting the piezoelectric layer 512 and preventing a short circuit between the first electrode layer 511 and the second electrode layer 513 between the piezoelectric layer 512 and the second electrode layer 513. An insulating layer (insulating protective layer) may be provided.

The insulator layer is made of, for example, SiO ₂ (silicon oxide), Al ₂ O ₃ (aluminum oxide), SiN (silicon nitride), or the like.
In addition, the second electrode layer 513 is separated from the piezoelectric layer 512 (or the insulating layer when the above-described insulating layer is provided) between the piezoelectric layer 512 and the second electrode layer 513. An underlayer having a function of preventing the above may be provided.
Such an underlayer is made of, for example, Ti, Cr or the like.

  In the drive unit 51 configured as described above, when a voltage is applied between the first electrode layer 511 and the second electrode layer 513, an electric field in the z-axis direction is generated in the piezoelectric layer 512, and the piezoelectric element The body layer 512 expands or contracts in the y-axis direction. Similarly, in the driving unit 52, when a voltage is applied between the first electrode layer 521 and the second electrode layer 523, an electric field in the z-axis direction is generated in the piezoelectric layer 522, and the piezoelectric layer 522. Expands or contracts in the y-axis direction.

At this time, when one of the drive units 51 and 52 is extended in the y-axis direction, the other drive unit is contracted in the y-axis direction, whereby the vibrating arm 22 is flexibly vibrated in the x-axis direction. be able to.
Similarly, the vibrating arm 23 can be bent and vibrated in the x-axis direction by the driving units 53 and 54.

  In the present embodiment, the first electrode layer 511 of the drive unit 51 and the first electrode layer 541 of the drive unit 54 are electrically connected to the terminals 59a provided on the base 21 shown in FIG. ing. In addition, the second electrode layer 513 of the drive unit 51 and the second electrode layer 543 of the drive unit 54 are electrically connected to terminals 59b provided on the base 21 shown in FIG. Further, the first electrode layer 521 of the driving unit 52 and the first electrode layer 531 of the driving unit 53 are electrically connected to terminals 59c provided on the base 21 shown in FIG. In addition, the second electrode layer 523 of the driving unit 52 and the second electrode layer 533 of the driving unit 53 are electrically connected to terminals 59d provided on the base 21 shown in FIG.

Therefore, by applying a voltage between the terminals 59a and 59d and the terminals 59b and 59c while setting the terminals 59a and 59d to the same potential, and the terminals 59b and 59c to the same potential, the vibrating arm 22 is provided. , 23 can be bent and vibrated in the x-axis direction so as to approach or separate from each other.
Here, the wiring for electrically connecting the drive unit 51 and the terminals 59a and 59b will be described. In addition, about the wiring which electrically connects the drive part 54 and the terminals 59a and 59b, and the wiring which electrically connects the drive parts 52 and 53 and the terminals 59c and 59d, the drive part 51 and the terminals 59a and 59b. Are the same as the wiring that electrically connects the two, and the description thereof is omitted.

As shown in FIG. 5A, the wiring 62 electrically connected to the terminal 59 b is drawn out from the second electrode layer 513 of the driving unit 51. Although not shown, a wiring electrically connected to the terminal 59a is drawn out from the first electrode layer 511 of the driving unit 51.
The wiring 62 has a portion 621 provided along the side surface of the piezoelectric layer 512. Thereby, the wiring over the second electrode layer 513 on the piezoelectric layer 512 can be performed.

An insulator layer 61 is provided between the side surfaces of the piezoelectric layer 512 and the first electrode layer 511 and the wiring 62. Thereby, a short circuit between the wiring 62 and the first electrode layer 511 can be prevented.
In particular, when the dielectric constant of the piezoelectric layer 512 is εp and the dielectric constant of the insulator layer 61 is εi,
The relationship εp> εi is satisfied.

Thereby, since the dielectric constant of the insulator layer 61 is smaller than the dielectric constant of the piezoelectric layer 512, the parasitic capacitance between the wiring 62 and the first electrode layer 511 can be reduced. Therefore, it is possible to prevent the wiring 62 from adversely affecting the characteristics of the sensor element 2. Specifically, it is possible to prevent a decrease in driving force of the driving unit 51 due to such parasitic capacitance.
The constituent material of the insulator layer 61 is not particularly limited as long as it has insulating properties and satisfies the relationship of the dielectric constant as described above, and examples thereof include insulating inorganic compounds and resin materials. When the piezoelectric layer 512 is made of PZT, TiO ₂ , HfO ₂ , SiO ₂ , Al ₂ O ₃ , SiN, SiC, or the like can be used, and the piezoelectric layer 512 is made of ZnO or AlN. In this case, SiO ₂ , Al ₂ O ₃ or the like can be used.

Moreover, the difference between the dielectric constant εp of the piezoelectric layer 512 and the dielectric constant εi of the insulator layer 61 is preferably 1 [F / m] or more, and more preferably 2 [F / m] or more. .
As described above, the terminal 59 b provided on the base 21 is electrically connected to the second electrode layer 513 through the wiring 62, so that it is directly installed on the base 21 without using the piezoelectric layer 512. The second electrode layer 513 can be energized using the terminal 59b. Further, since the terminal 59b installed directly on the base 21 without the piezoelectric layer 512 is excellent in adhesion to the base 21, it can be prevented from being peeled off even when wire bonding is performed. Excellent in properties.

The insulator layer 61 has a portion 611 provided on the second electrode layer 513 side with respect to the piezoelectric layer 512. A part of the second electrode layer 513 is interposed between the portion 611 and the piezoelectric layer 512. Thereby, the electrode area of the second electrode layer 513 can be increased. Therefore, the electric field efficiency of the drive unit 51 can be improved. As a result, the driving force of the drive unit 51 can be increased.
The insulator layer 61 is preferably thicker than the first electrode layer 511. Thereby, the side surface of the first electrode layer 511 can be covered with the insulator layer 61 easily and reliably.

"Detection unit"
Next, the detection units 55 and 56 will be described.
The detection unit 55 is a piezoelectric element (first piezoelectric element) that detects bending vibration (so-called out-of-plane vibration) in the z-axis direction of the vibrating arm 22. Similarly, the detection unit 56 is a piezoelectric element (first piezoelectric element) that detects bending vibration of the vibrating arm 23 in the z-axis direction.

The detection unit 55 is provided at the center of the vibrating arm 22 in the width direction (x-axis direction). Similarly, the detection unit 56 is provided at the center of the vibrating arm 23 in the width direction (x-axis direction).
In the present embodiment, the detection unit 55 is mainly provided in a portion on the proximal end side of the vibrating arm 22. Similarly, the detection unit 56 is mainly provided in the proximal end portion of the vibrating arm 23.
The detection unit 55 is provided between the pair of drive units 51 and 52 described above, and similarly, the detection unit 56 is provided between the pair of drive units 53 and 54 described above.

The detection units 55 and 56 are each configured to output charges by expanding and contracting in the y-axis direction.
Specifically, as shown in FIG. 4, the detection unit 55 is provided on the side opposite to the vibrating arm 22 with respect to the first electrode layer 551 (first lower electrode layer) and the first electrode layer 551. The second electrode layer 553 (first upper electrode layer) and the piezoelectric layer 552 (first piezoelectric layer) provided between the first electrode layer 551 and the second electrode layer 553 are provided. Have. In other words, the detection unit 55 is configured by laminating the first electrode layer 551, the piezoelectric layer (piezoelectric thin film) 552, and the second electrode layer 553 on the vibrating arm 22 in this order.

Similarly, the detection unit 56 is configured by laminating a first electrode layer 561, a piezoelectric layer (piezoelectric thin film) 562, and a second electrode layer 563 on the vibrating arm 23 in this order.
By using such detection units 55 and 56, even if the vibrating arms 22 and 23 themselves do not have piezoelectricity, or even if the vibrating arms 22 and 23 themselves have piezoelectricity, their polarization axes and crystals Even when the direction of the axis is not suitable for detection of bending vibration in the z-axis direction, bending vibration in the z-axis direction of the vibrating arms 22 and 23 can be detected relatively easily and efficiently. . In addition, since the vibrating arms 22 and 23 are not subject to the presence of piezoelectricity and the direction of the polarization axis and the crystal axis, the range of selection of the constituent materials of the vibrating arms 22 and 23 is widened. Therefore, the vibrating body 20 having desired vibration characteristics can be realized relatively easily.

The first electrode layers 551 and 561 can be made of the same material as the first electrode layers of the drive units 51 to 54 described above.
The first electrode layers 551 and 561 can be configured to have the same thickness as the first electrode layers of the drive units 51 to 54 described above.
Further, the first electrode layers 551 and 561 can be collectively formed in the same process as the first electrode layers of the driving units 51 to 54 described above.

The piezoelectric layers 552 and 562 can be made of the same material as the piezoelectric layers of the drive units 51 to 54 described above.
In addition, the piezoelectric layers 552 and 562 can be configured to have the same thickness as the piezoelectric layers of the driving units 51 to 54 described above.
In addition, the piezoelectric layers 552 and 562 can be collectively formed in the same process as the piezoelectric layers of the driving units 51 to 54 described above.

The second electrode layers 553 and 563 can be made of the same material as the second electrode layers of the driving units 51 to 54 described above.
Further, the second electrode layers 553 and 563 can be configured with the same thickness as the second electrode layers of the driving units 51 to 54 described above.
Further, the second electrode layers 553 and 563 can be collectively formed in the same process as the second electrode layers of the driving units 51 to 54 described above.

When the vibrating arm 22 bends in the z-axis direction, the detection unit 55 configured in this way expands or contracts in the y-axis direction and outputs an electric charge. As a result, the detection unit 55 outputs a charge along with bending vibration of the vibrating arm 22 in the z-axis direction.
Similarly, the detection unit 56 outputs electric charges along with bending vibration of the vibrating arm 23 in the z-axis direction.
In the present embodiment, the first electrode layer 551 of the detection unit 55 and the second electrode layer 563 of the detection unit 56 are electrically connected to the terminal 59f provided on the base 21 shown in FIG. Further, the second electrode layer 553 of the detection unit 55 and the first electrode layer 561 of the detection unit 56 are electrically connected to a terminal 59e provided on the base 21 shown in FIG.

Therefore, when the vibrating arms 22 and 23 bend and vibrate in the z-axis direction to the opposite sides, a potential difference is generated between the terminal 59e and the terminal 59f along with the bending vibration.
Here, the wiring for electrically connecting the detection unit 55 and the terminals 59e and 59f will be described. Note that the wiring that electrically connects the detection unit 56 and the terminals 59e and 59f is the same as the wiring that electrically connects the detection unit 55 and the terminals 59e and 59f, and a description thereof will be omitted.

As shown in FIG. 5B, a wiring 64 electrically connected to the terminal 59f is drawn out from the second electrode layer 553 of the detection unit 55. Although not shown, a wiring electrically connected to the terminal 59e is drawn out from the first electrode layer 551 of the detection unit 55.
The wiring 64 has a portion 641 provided along the side surface of the piezoelectric layer 552. Thereby, the wiring over the second electrode layer 553 on the piezoelectric layer 552 can be performed.

In addition, an insulator layer 63 is provided between the side surfaces of the piezoelectric layer 552 and the first electrode layer 551 and the wiring 64. Thereby, a short circuit between the wiring 64 and the first electrode layer 551 can be prevented.
In particular, when the dielectric constant of the piezoelectric layer 552 is εp and the dielectric constant of the insulator layer 63 is εi,
The relationship εp> εi is satisfied.

Thereby, since the dielectric constant of the insulator layer 63 is smaller than the dielectric constant of the piezoelectric layer 552, the parasitic capacitance between the wiring 64 and the first electrode layer 551 can be reduced. Therefore, it is possible to prevent the wiring 64 from adversely affecting the characteristics of the sensor element 2. Specifically, a decrease in detection sensitivity of the detection unit 55 due to such parasitic capacitance can be prevented.
The constituent material of the insulator layer 63 is not particularly limited as long as it has an insulating property and satisfies the relationship of the dielectric constant as described above, and is the same material as the constituent material of the insulator layer 61 described above. Can be used.

Further, the difference between the dielectric constant εp of the piezoelectric layer 552 and the dielectric constant εi of the insulator layer 63 is preferably 1 [F / m] or more, and more preferably 2 [F / m] or more. .
As described above, the terminal 59 f provided on the base 21 is electrically connected to the second electrode layer 553 via the wiring 64, so that it is directly installed on the base 21 without the piezoelectric layer 552. The second electrode layer 553 can be energized using the terminal 59f thus formed. In addition, since the terminal 59f installed directly on the base portion 21 without using the piezoelectric layer 552 has excellent adhesion to the base portion 21, it can be prevented from being peeled off even when wire bonding is performed. Excellent in properties.

  The insulator layer 63 has a portion 631 provided on the second electrode layer 553 side with respect to the piezoelectric layer 552. A part of the second electrode layer 553 is interposed between the portion 631 and the piezoelectric layer 552. Thereby, the electrode area of the second electrode layer 553 can be increased. Therefore, the electric field efficiency of the detection unit 55 can be improved. As a result, the detection sensitivity of the detection unit 55 can be increased.

The insulator layer 63 is preferably thicker than the first electrode layer 551. Thereby, the side surface of the first electrode layer 551 can be covered with the insulator layer 63 easily and reliably.
In the sensor element 2 configured as described above, by applying a voltage between the terminals 59a and 59d and the terminals 59b and 59c, the vibrating arms 22 and 23 are moved toward and away from each other in the x-axis direction. Bend vibration (drive vibration).

If the angular velocity ω about the y-axis is applied to the sensor element 2 in the state where the vibrating arms 22 and 23 are driven and vibrated in this way, the vibrating arms 22 and 23 bend in the opposite direction in the z-axis direction due to Coriolis force. Vibrates (detects vibration).
The angular velocity ω applied to the sensor element 2 can be obtained by detecting the charges generated in the detection units 55 and 56 by the detection vibration of the vibrating arms 22 and 23 through the terminals 59e and 59f.
The sensor element 2 as described above can be manufactured by the following manufacturing method.

Hereinafter, based on FIGS. 6 and 7, a method for manufacturing the sensor element 2 will be described as an example of the method for manufacturing the resonator element according to the invention.
6 and 7 are views for explaining a method for manufacturing the sensor element shown in FIG. 3 (an example of a method for manufacturing a resonator element according to the invention). In the following, for convenience of explanation, the steps related to the drive unit 51, the insulator layer 61, and the wiring 62 will be described representatively.
The manufacturing method of the sensor element 2 includes: [A] a first step of forming the first electrode layer 511, the piezoelectric layer 512, and the second electrode layer 513; and [B] a second step of forming the insulator layer 61. And the third step of forming the [C] wiring 62.

Hereinafter, each process will be described in detail.
[A] First step -A1-
First, as shown in FIG. 6A, the conductor layer 202 is formed on the substrate 201.
The substrate 201 becomes the vibrating body 20 by being processed in a later process, and is made of the same material as the constituent material of the vibrating body 20 described above.

Note that the substrate 201 forms an insulating layer for forming the insulator layer 24 as necessary before forming the conductor layer 202.
The conductor layer 202 is processed in a later step to become the first electrode layer 511, and is made of the same material as the constituent material of the first electrode layer 511 described above.
The method for forming the conductor layer 202 is not particularly limited. For example, dry plating methods such as vacuum deposition, sputtering (low temperature sputtering), ion plating, etc., wet plating methods such as electrolytic plating and electroless plating, and thermal spraying methods. And conductor foil bonding.

-A2-
Next, as shown in FIG. 6B, the piezoelectric layer 203 is formed on the conductor layer 202.
The piezoelectric layer 203 becomes a piezoelectric layer 512 by being processed in a later step, and is made of the same material as the constituent material of the piezoelectric layer 512 described above.
A method for forming the piezoelectric layer 203 is not particularly limited. For example, a vapor deposition method such as plasma CVD, a sol-gel method, or a sputtering method can be used.

-A3-
Next, as shown in FIG. 6C, a conductor layer 204 is formed on the piezoelectric layer 203.
The conductor layer 204 is processed into a second electrode layer 513 by being processed in a later process, and is made of the same material as the constituent material of the second electrode layer 513 described above.
As a method for forming the conductor layer 204, a method similar to the method for forming the conductor layer 202 described above can be used.

-A4-
After sequentially laminating the conductor layer 202, the piezoelectric layer 203, and the conductor layer 204 in this way, the laminated body composed of the conductor layer 202, the piezoelectric layer 203, and the conductor layer 204 is etched, and as shown in FIG. In this manner, the first electrode layer 511, the piezoelectric layer 512, and the second electrode layer 513 are formed.
Such etching is not particularly limited, and examples thereof include reactive ion etching (RIE) and dry etching using CF ₄ .
In the etching, a mask formed by photolithography can be used.

[B] Second Step Next, as shown in FIG. 7B, an insulator layer 61 is formed.
A method for forming the insulator layer 61 is not particularly limited, but for example, a vapor deposition method such as plasma CVD can be used. In addition, etching using a mask formed by photolithography can be used.

[C] Third Step Next, as shown in FIG. 7C, the wiring 62 is formed.
A method for forming the wiring 62 is not particularly limited. For example, dry plating methods such as vacuum deposition, sputtering (low temperature sputtering), ion plating, etc., wet plating methods such as electrolytic plating and electroless plating, thermal spraying methods, and conductive foils. And the like. In addition, etching using a mask formed by photolithography can be used.
Thereafter, the vibration body 20 is obtained by processing the substrate 201 by etching.

  Such an etching method is not particularly limited. For example, one or two of physical etching methods such as plasma etching, reactive ion etching, beam etching, and light-assisted etching, and chemical etching methods such as wet etching are used. A combination of more than one species can be used. In the etching as described above, for example, a mask formed by a photolithography method can be used.

According to the method for manufacturing the sensor element 2 as described above, it is possible to carry out the wiring over the second electrode layer 513 while preventing adverse effects on the characteristics of the sensor element 2.
In particular, since the second electrode layer 513 is formed before the insulator layer 61 is formed, the electrode area of the second electrode layer 513 can be increased. Therefore, the electric field efficiency of the obtained drive unit 51 can be improved.

[IC chip]
The IC chip 3 shown in FIGS. 1 and 2 is an electronic component having a function of driving the sensor element 2 described above and a function of detecting an output (sensor output) from the sensor element 2.
Although not shown, such an IC chip 3 includes a drive circuit that drives the sensor element 2 and a detection circuit that detects an output from the sensor element 2.
The IC chip 3 is provided with a plurality of connection terminals 31.

[package]
As shown in FIGS. 1 and 2, the package 4 includes a base member 41 (base) having a concave portion that opens upward, and a lid member 42 (lid) provided so as to cover the concave portion of the base member 41. Prepare. Thereby, an internal space in which the sensor element 2 and the IC chip 3 are accommodated is formed between the base member 41 and the lid member 42.

The base member 41 includes a flat plate body 411 (plate portion) and a frame body 412 (frame portion) joined to the outer peripheral portion of the upper surface of the plate body 411.
Such a base member 41 is made of, for example, an aluminum oxide sintered body, crystal, glass, or the like.
As shown in FIG. 1, the upper surface of the base member 41 (the surface covered with the lid member 42) is covered with a bonding member 81 such as an adhesive that includes an epoxy resin, an acrylic resin, or the like. The base 21 of the sensor element 2 is joined. Thereby, the sensor element 2 is supported and fixed to the base member 41.

Further, the above-described IC chip 3 is bonded to the upper surface of the base member 41 by a bonding member 82 such as an adhesive configured to include, for example, an epoxy resin, an acrylic resin, or the like. Thereby, the IC chip 3 is supported and fixed to the base member 41.
Further, as shown in FIGS. 1 and 2, a plurality of internal terminals 71 and a plurality of internal terminals 72 are provided on the upper surface of the base member 41.

The terminals 59a to 59f of the sensor element 2 described above are electrically connected to the plurality of internal terminals 71 via, for example, wiring configured by bonding wires.
The plurality of internal terminals 71 are electrically connected to the plurality of internal terminals 72 via wiring (not shown).
In addition, the plurality of connection terminals 31 of the IC chip 3 described above are electrically connected to the plurality of internal terminals 72 via, for example, wiring configured by bonding wires.

On the other hand, as shown in FIG. 1, a plurality of external terminals 73 that are used when mounted on a device (external device) in which the sensor device 1 is incorporated are provided on the lower surface of the base member 41 (the bottom surface of the package 4). ing.
The plurality of external terminals 73 are electrically connected to the internal terminals 72 described above via internal wiring (not shown). Thereby, the IC chip 3 and the plurality of external terminals 73 are electrically connected.

Each of the internal terminals 71 and 72 and the external terminals 73 is made of a metal film in which a film of nickel (Ni), gold (Au) or the like is laminated on a metallized layer of tungsten (W) or the like by plating or the like. Become.
A lid member 42 is airtightly joined to such a base member 41. Thereby, the inside of the package 4 is hermetically sealed.

The lid member 42 is made of, for example, the same material as the base member 41 or a metal such as Kovar, 42 alloy, stainless steel, or the like.
The joining method of the base member 41 and the lid member 42 is not particularly limited. For example, a joining method using an adhesive composed of a brazing material, a curable resin, or the like, a welding method such as seam welding, laser welding, or the like is used. be able to.

Such bonding is performed under reduced pressure or in an inert gas atmosphere, whereby the inside of the package 4 can be maintained in a reduced pressure state or an inert gas sealed state.
According to the sensor element 2 provided in the sensor device 1 according to the first embodiment as described above, the wiring over the upper electrode layer on the piezoelectric layer while preventing adverse effects on the characteristics of the sensor element 2. It can be performed.
Further, according to the sensor device 1 including the sensor element 2 as described above, the reliability is excellent.

Second Embodiment
Next, a second embodiment of the present invention will be described.
FIG. 8 is a diagram for explaining a sensor element (vibration piece) according to the second embodiment of the present invention.
The sensor element according to the present embodiment is the same as the sensor element according to the first embodiment described above except that the configuration relating to the wiring of the drive unit and the detection unit is different.

In the following description, the sensor element of the second embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted. Moreover, in FIG. 8, the same code | symbol is attached | subjected about the structure similar to embodiment mentioned above. 8A is a cross-sectional view corresponding to FIG. 5A, and FIG. 8B is a cross-sectional view corresponding to FIG. 5B.
As shown in FIG. 8, the sensor element of the present embodiment includes a drive unit 51 </ b> A and a detection unit 55 </ b> A provided on the vibrating arm 22.

As shown in FIG. 8A, the drive unit 51A (first piezoelectric element) is different from the vibrating arm 22 with respect to the first electrode layer 511A (first lower electrode layer) and the first electrode layer 511A. The second electrode layer 513A (first upper electrode layer) provided on the opposite side, and the piezoelectric layer 512A (first piezoelectric layer) provided between the first electrode layer 511A and the second electrode layer 513A Body layer).
A wiring 62A is drawn out to the second electrode layer 513A of the driving unit 51A.

The wiring 62A has a portion provided along the side surface of the piezoelectric layer 512A.
An insulating layer 61A is provided between the side surfaces of the piezoelectric layer 512A and the first electrode layer 511A and the wiring 62A.
In the present embodiment, the side surface of the piezoelectric layer 512A is inclined with respect to the main surface of the first electrode layer 511A so as to relax the step due to the piezoelectric layer 512A. Thereby, disconnection of the wiring 62A and damage to the insulating layer 61A due to a step due to the piezoelectric layer 512A can be prevented. Moreover, the film-forming property at the time of forming the wiring 62A and the insulating layer 61A can be improved.

As shown in FIG. 8B, the detection unit 55A (first piezoelectric element) has a vibrating arm 22 relative to the first electrode layer 551A (first lower electrode layer) and the first electrode layer 551A. The second electrode layer 553A (first upper electrode layer) provided on the opposite side and the piezoelectric layer 552A (first piezoelectric layer) provided between the first electrode layer 551A and the second electrode layer 553A. Body layer).
A wiring 64A is drawn out to the second electrode layer 553A of the detection unit 55A.

The wiring 64A has a portion provided along the side surface of the piezoelectric layer 552A.
An insulating layer 63A is provided between the side surfaces of the piezoelectric layer 552A and the first electrode layer 551A and the wiring 64A.
In the present embodiment, the side surface of the piezoelectric layer 552A is inclined so as to relax the step due to the piezoelectric layer 552A. Thereby, disconnection of the wiring 64A and damage to the insulating layer 63A due to a step due to the piezoelectric layer 552A can be prevented. In addition, the film forming property when the wiring 64A and the insulating layer 63A are formed can be improved.
Also with the sensor element according to the second embodiment as described above, it is possible to carry out the wiring over the upper electrode layer on the piezoelectric layer while preventing an adverse effect on the characteristics of the sensor element.

<Third Embodiment>
Next, a third embodiment of the present invention will be described.
FIG. 9 is a view for explaining a sensor element (vibration piece) according to the third embodiment of the present invention.
The sensor element according to the present embodiment is the same as the sensor element according to the first embodiment described above except that the configuration relating to the wiring of the drive unit and the detection unit is different.

In the following description, the sensor element of the third embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted. In FIG. 9, the same reference numerals are given to the same configurations as those in the above-described embodiment. 9A is a cross-sectional view corresponding to FIG. 5A, and FIG. 9B is a cross-sectional view corresponding to FIG. 5B.
As shown in FIG. 9, the sensor element of the present embodiment includes a drive unit 51 </ b> B and a detection unit 55 </ b> B provided on the vibrating arm 22.

As shown in FIG. 9A, the drive unit 51B (first piezoelectric element) has a vibrating arm 22 relative to the first electrode layer 511B (first lower electrode layer) and the first electrode layer 511B. The second electrode layer 513B (first upper electrode layer) provided on the opposite side and the piezoelectric layer 512B (first piezoelectric layer) provided between the first electrode layer 511B and the second electrode layer 513B Body layer).
The wiring 62B is drawn out to the second electrode layer 513B of the driving unit 51B.

The wiring 62B has a portion provided along the side surface of the piezoelectric layer 512B.
In addition, an insulator layer 61B is provided between the side surfaces of the piezoelectric layer 512B and the first electrode layer 511B and the wiring 62B.
In the present embodiment, the insulator layer 61B has a portion provided on the second electrode layer 513B side with respect to the piezoelectric layer 512B, and the second layer is between the portion and the piezoelectric layer 512B. There is no electrode layer 513B. Thereby, at the time of manufacturing the sensor element, the second electrode layer 513B and the wiring 62B can be collectively formed after the insulator layer 61B is formed. Therefore, the manufacturing process of the sensor element can be simplified.

As shown in FIG. 9B, the detection unit 55B (first piezoelectric element) has a vibrating arm 22 relative to the first electrode layer 551B (first lower electrode layer) and the first electrode layer 551B. A second electrode layer 553B (first upper electrode layer) provided on the opposite side, and a piezoelectric layer 552B (first piezoelectric layer) provided between the first electrode layer 551B and the second electrode layer 553B. Body layer).
A wiring 64B is drawn out to the second electrode layer 553B of the detection unit 55B.
The wiring 64B has a portion provided along the side surface of the piezoelectric layer 552B.
In addition, an insulator layer 63B is provided between the side surfaces of the piezoelectric layer 552B and the first electrode layer 551B and the wiring 64B.

In the present embodiment, the second electrode layer 553B does not exist between the piezoelectric layer 552B and the portion provided on the second electrode layer 553B side with respect to the piezoelectric layer 552B of the insulator layer 63B. Thereby, at the time of manufacturing the sensor element, the second electrode layer 553B and the wiring 64B can be collectively formed after the insulator layer 63B is formed. Therefore, the manufacturing process of the sensor element can be simplified.
Also with the sensor element 2 according to the third embodiment as described above, it is possible to carry out the wiring over the upper electrode layer on the piezoelectric layer while preventing adverse effects on the characteristics of the sensor element.

<Fourth embodiment>
Next, a fourth embodiment of the present invention will be described.
10 is a plan view showing a sensor element (vibration piece) according to a fourth embodiment of the present invention, FIG. 11 is a sectional view taken along the line DD in FIG. 10, and FIG. 12 is a diagram of the sensor element shown in FIG. It is a figure for demonstrating operation | movement.

Hereinafter, the sensor device according to the fourth embodiment will be described focusing on differences from the above-described embodiment, and description of similar matters will be omitted.
The sensor element according to the fourth embodiment of the present invention is a so-called H-type sensor element.
As shown in FIG. 10, the sensor element 2C of the present embodiment includes a vibrating body 20C, driving units 51C to 54C, detection units 55C and 56C, and terminals 57a to 57f provided on the vibrating body 20C.

The vibrator 20C has a so-called H-type structure.
The vibrating body 20C includes a base portion 21C, a pair of driving vibration arms 22C and 23C, a pair of detection vibration arms 27 and 28, and a support portion 26.
The base portion 21 </ b> C is supported by the support portion 26.
The support portion 26 includes a frame-shaped fixing portion 261 that is fixed to a package (not shown), and four beam portions 262, 263, 264, and 265 that connect the fixing portion 261 and the base portion 21C.

The drive vibrating arms 22C and 23C respectively extend in the y-axis direction (+ y direction side) from the base portion 21C.
Each of the detection vibrating arms 27 and 28 extends in the y-axis direction (−y direction side) from the base portion 21C.
Such a vibrating body 20 </ b> C can be configured using the same material as that of the vibrating body 20 of the first embodiment described above.

A pair of drive units 51C and 52C is provided on the drive vibrating arm 22C of the vibrator 20C configured in this manner. Similarly, a pair of drive units 53C and 54C is provided on the drive vibrating arm 23C.
A detection unit 55 </ b> C is provided on the detection vibrating arm 27. Similarly, a detection unit 56 </ b> C is provided on the detection vibrating arm 28.

Each of the pair of drive units 51C and 52C is a piezoelectric element that flexures and vibrates the driving vibrating arm 22C in the x-axis direction. Similarly, the pair of drive units 53C and 54C are piezoelectric elements that respectively vibrate and vibrate the drive vibrating arm 23C in the x-axis direction.
Here, the pair of drive units 51C and 52C will be described in detail. Note that the drive units 53C and 54C are the same as the drive units 51C and 52C, and thus the description thereof is omitted.

  As shown in FIG. 11, the driving unit 51C (first piezoelectric element) is opposite to the driving vibrating arm 22C with respect to the first electrode layer 511C (first lower electrode layer) and the first electrode layer 511C. The second electrode layer 513C (first upper electrode layer) provided on the side, and the piezoelectric layer 512C (first piezoelectric body) provided between the first electrode layer 511C and the second electrode layer 513C Layer). In other words, the driving unit 51C is configured by laminating the first electrode layer 511C, the piezoelectric layer (piezoelectric thin film) 512C, and the second electrode layer 513C in this order on the driving vibrating arm 22C.

Similarly, the drive unit 52C (second piezoelectric element) includes a first electrode layer 521C (second lower electrode), a piezoelectric layer (second piezoelectric layer) 522C, and a second electrode on the driving vibrating arm 22C. The electrode layer 523C (second upper electrode) is laminated in this order.
A wiring 66 electrically connected to the first electrode layer 521C of the drive unit 52C is drawn out from the second electrode layer 513C of the drive unit 51C.

The wiring 66 has a portion provided along the side surface of the piezoelectric layer 512C on the drive unit 52C side.
In addition, an insulator layer 65 is provided between the side surfaces of the piezoelectric layer 512 </ b> C and the first electrode layer 511 </ b> C and the wiring 66.
As described above, the second electrode layer 513C of one drive unit 51C is electrically connected to the second electrode layer 521C of the other drive unit 52C via the wiring 66, whereby the wiring 66 and the first electrode layer 513C are electrically connected to the first drive unit 51C. Since the parasitic capacitance between the electrode layer 511 </ b> C and the electrode layer 511 </ b> C can be reduced, a decrease in driving force due to the wiring 66 can be prevented.

The insulator layer 65 has a portion provided on the second electrode layer 513C side with respect to the piezoelectric layer 512C. A part of the second electrode layer 513C is interposed between the portion and the piezoelectric layer 512C. Thereby, the electrode area of the second electrode layer 513C can be increased. Therefore, the electric field efficiency of the drive unit 51C can be improved.
In addition, an insulator layer 67 is provided so as to cover the side surfaces of the first electrode layer 521C, the piezoelectric layer 522C, and the second electrode layer 523C of the driving unit 52C. Thereby, the reliability of the drive part 52C can be improved. The insulator layer 67 can be formed together with the insulator layer 65 described above.

Such driving units 51C to 54C are electrically connected to terminals 57a and 57b provided in the fixing unit 261 via wiring (not shown).
On the other hand, the detection unit 55 </ b> C is a piezoelectric element that detects bending vibration in the z-axis direction of the detection vibrating arm 27. Similarly, the detection unit 56 </ b> C is a piezoelectric element that detects bending vibration in the z-axis direction of the detection vibrating arm 28.

Such detection units 55C and 56C are configured in the same manner as the detection units 55 and 56 of the first embodiment described above.
Such a detection unit 55C is electrically connected to terminals 57c and 57d provided on the fixing unit 261 via a wiring (not shown). Similarly, the detection unit 56C is electrically connected to terminals 57e and 57f provided on the fixing unit 261 via a wiring (not shown).

  In the sensor element 2C configured as described above, when the driving signal is applied between the terminal 57a and the terminal 57b, the driving vibrating arm 22C and the driving vibrating arm 23C approach each other as shown in FIG.・ Bend vibration (drive vibration) so as to be separated. That is, the driving vibrating arm 22C is bent in the direction of arrow A1 shown in FIG. 12, the driving vibrating arm 23C is bent in the direction of arrow A2 shown in FIG. 12, and the driving vibrating arm 22C is shown in FIG. The state in which the driving vibrating arm 23C is bent in the direction of the arrow B2 shown in FIG.

  If the angular velocity ω around the y-axis is applied to the sensor element 2C with the drive vibrating arms 22C and 23C being driven to vibrate in this way, the drive vibrating arms 22C and 23C are mutually moved in the z-axis direction by Coriolis force. Bend and vibrate on the opposite side. Accordingly, the detection vibrating arms 27 and 28 bend and vibrate (detection vibration) on the opposite sides in the z-axis direction. That is, the detection vibrating arm 27 is bent in the direction of the arrow C1 shown in FIG. 12, the detection vibrating arm 28 is bent in the direction of the arrow C2 shown in FIG. 12, and the detection vibrating arm 27 is shown in FIG. The state in which the detection vibrating arm 28 is bent in the direction of the arrow D2 shown in FIG.

The angular velocity ω applied to the sensor element 2C can be obtained by detecting the charges generated in the detection portions 55C and 56C by the detection vibration of the detection vibrating arms 27 and 28.
Even with the sensor element according to the fourth embodiment as described above, the wiring over the upper electrode layer on the piezoelectric layer can be performed while preventing adverse effects on the characteristics of the sensor element.

<Fifth Embodiment>
Next, a fifth embodiment of the present invention will be described.
FIG. 13 is a view for explaining a sensor element according to the fifth embodiment of the present invention.
The sensor element according to the present embodiment is the same as the sensor element according to the fourth embodiment described above except that the configuration related to the wiring of the drive unit is different.

In the following description, the sensor element of the fifth embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted. Moreover, in FIG. 13, the same code | symbol is attached | subjected about the structure similar to embodiment mentioned above. FIG. 13 is a cross-sectional view corresponding to FIG.
As shown in FIG. 13, the sensor element of the present embodiment includes a pair of drive units 51D and 52D provided on the drive vibrating arm 22C.

The drive unit 51D (first piezoelectric element) includes a first electrode layer 511D (first lower electrode layer) and a second electrode provided on the opposite side of the drive vibrating arm 22C with respect to the first electrode layer 511D. Electrode layer 513D (first upper electrode layer) and a piezoelectric layer 512D (first piezoelectric layer) provided between the first electrode layer 511D and the second electrode layer 513D.
Similarly, the driving unit 52D (second piezoelectric element) is provided on the opposite side of the driving vibrating arm 22C with respect to the first electrode layer 521D (second lower electrode layer) and the first electrode layer 521D. And a second electrode layer 523D (second upper electrode layer) and a piezoelectric layer 522D (second piezoelectric layer) provided between the first electrode layer 521D and the second electrode layer 523D. .

A wiring 66D electrically connected to the first electrode layer 521D of the driving unit 52D is drawn out to the second electrode layer 513D of the driving unit 51D.
The wiring 66D has a portion provided along the side surface of the piezoelectric layer 512D.
In addition, an insulating layer 65D is provided between the side surfaces of the piezoelectric layer 512D and the first electrode layer 511D and the wiring 66D.

In the present embodiment, the side surface of the piezoelectric layer 512D is inclined so as to relax the step due to the piezoelectric layer 512D. Thereby, disconnection of the wiring 66D and damage to the insulating layer 65D due to the step due to the piezoelectric layer 512D can be prevented. In addition, it is possible to improve the film forming property when forming the wiring 66D and the insulating layer 65D.
Even with the sensor element according to the fifth embodiment as described above, the wiring over the upper electrode layer on the piezoelectric layer can be performed while preventing adverse effects on the characteristics of the sensor element.

<Sixth Embodiment>
Next, a sixth embodiment of the present invention will be described.
FIG. 14 is a view for explaining a sensor element according to the sixth embodiment of the present invention.
The sensor element according to the present embodiment is the same as the sensor element according to the first embodiment described above except that the configuration related to the wiring of the drive unit is different.

In the following description, the sensor element of the sixth embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted. Moreover, in FIG. 14, the same code | symbol is attached | subjected about the structure similar to embodiment mentioned above. FIG. 14 is a cross-sectional view corresponding to FIG.
As shown in FIG. 14, the sensor element according to the present embodiment includes a pair of drive units 51E and 52E provided on the drive vibrating arm 22C.

The drive unit 51E (first piezoelectric element) includes a first electrode layer 511E (first lower electrode layer) and a second electrode provided on the opposite side of the drive vibrating arm 22C with respect to the first electrode layer 511E. Electrode layer 513E (first upper electrode layer) and a piezoelectric layer 512E (first piezoelectric layer) provided between the first electrode layer 511E and the second electrode layer 513E.
Similarly, the drive unit 52E (second piezoelectric element) is provided on the side opposite to the drive vibrating arm 22C with respect to the first electrode layer 521E (second lower electrode layer) and the first electrode layer 521E. And a second electrode layer 523E (second upper electrode layer) and a piezoelectric layer 522E (second piezoelectric layer) provided between the first electrode layer 521E and the second electrode layer 523E. .

A wiring 66E electrically connected to the first electrode layer 521E of the drive unit 52E is drawn out from the second electrode layer 513E of the drive unit 51E.
The wiring 66E has a portion provided along the side surface of the piezoelectric layer 512E.
An insulating layer 65E is provided between the side surfaces of the piezoelectric layer 512E and the first electrode layer 511E and the wiring 66E.

  In the present embodiment, the insulating layer 65E has a portion provided on the second electrode layer 513E side with respect to the piezoelectric layer 512E, and the second layer between the portion and the piezoelectric layer 512E is the second layer. There is no electrode layer 513E. Thereby, at the time of manufacturing the sensor element, the second electrode layer 513E and the wiring 66E can be collectively formed after the insulator layer 65E is formed. Therefore, the manufacturing process of the sensor element can be simplified.

Also with the sensor element according to the sixth embodiment as described above, it is possible to carry out the wiring over the upper electrode layer on the piezoelectric layer while preventing adverse effects on the characteristics of the sensor element.
The sensor device (vibration device) of each embodiment as described above can be used by being incorporated in various electronic devices.
According to such an electronic device, the reliability can be improved.

(Electronics)
Here, an example of the electronic apparatus of the present invention will be described in detail with reference to FIGS.
FIG. 15 is a perspective view showing the configuration of a mobile (or notebook) personal computer to which the electronic apparatus of the present invention is applied.

In this figure, a personal computer 1100 includes a main body portion 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display portion 100. The display unit 1106 is rotated with respect to the main body portion 1104 via a hinge structure portion. It is supported movably.
Such a personal computer 1100 incorporates the aforementioned sensor device 1 that functions as a gyro sensor.

FIG. 16 is a perspective view showing a configuration of a mobile phone (including PHS) to which the electronic apparatus of the invention is applied.
In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and the display unit 100 is disposed between the operation buttons 1202 and the earpiece 1204.

Such a cellular phone 1200 incorporates the above-described sensor device 1 that functions as a gyro sensor.
FIG. 17 is a perspective view showing the configuration of a digital still camera to which the electronic apparatus of the present invention is applied. In this figure, connection with an external device is also simply shown.
Here, an ordinary camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an imaging device such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

A display unit is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD. The display unit is a finder that displays an object as an electronic image. Function.
A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

When the photographer confirms the subject image displayed on the display unit and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308.
In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication as necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.
Such a digital still camera 1300 incorporates the above-described sensor device 1 that functions as a gyro sensor.

  In addition to the personal computer (mobile personal computer) shown in FIG. 15, the mobile phone shown in FIG. 16, and the digital still camera shown in FIG. Detection device, pointing device, head mounted display, ink jet type ejection device (for example, ink jet printer), laptop personal computer, television, video camera, video tape recorder, navigation device, pager, electronic notebook (including communication function), Electronic dictionary, calculator, electronic game device, game controller, word processor, workstation, video phone, crime prevention TV monitor, electronic binoculars, POS terminal, medical device (for example, electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measurement device) Ultrasonic diagnostic apparatus, an electronic endoscope), a fish finder, various measurement devices, gauges (e.g., vehicle, aircraft, ship instruments), can be applied to a flight simulator or the like.

As mentioned above, although the vibration piece, the manufacturing method of the vibration piece, the vibration device, and the electronic apparatus of the present invention have been described based on the illustrated embodiments, the present invention is not limited thereto.
Moreover, in the resonator element, the vibration device, and the electronic apparatus of the present invention, the configuration of each part can be replaced with any configuration that exhibits the same function, and any configuration can be added.

In addition, the resonator element, the resonator element, and the electronic device of the present invention may be combined with any configuration of the above-described embodiments.
In the method for manufacturing a resonator element according to the invention, an arbitrary step can be added.
In the above-described embodiment, the case where the present invention is applied to a sensor element of a bipod tuning fork or an H type tuning fork has been described as an example. The present invention can be applied to various sensor elements (gyro elements) such as a prismatic type.
Further, the number of vibrating arms may be one or three or more as long as the piezoelectric element (driving unit or detecting unit) as described above is provided in at least one vibrating arm.

1 sensor device 2 sensor element 2C sensor element 3 IC chip 4 package 20 vibration body 20C vibration body 21 base 21C base 22 vibration arm 22C Vibration arm for driving 23 ... Vibration arm 23C ... Vibration arm for driving 24 ... Insulator layer 24C ... Insulating layer 26 ... Supporting part 27 ... Vibration arm for detection 28 ... Vibration arm for detection 31 ... Connection Terminal 41 ... Base member 42 ... Lid member 51 ... Drive part (piezoelectric element) 51A ... Drive part (piezoelectric element) 51B ... Drive part (piezoelectric element) 51C ... Drive part (piezoelectric element) ) 51D ... Drive unit (piezoelectric element) 51E ... Drive unit (piezoelectric element) 52 ... Drive unit (piezoelectric element) 52C ... Drive unit (piezoelectric element) 52D ... Drive unit (piezoelectric element) 52E Drive unit (Piezoelectric element) 53 Drive unit (Piezoelectric element) 53C Drive unit (Piezoelectric element) 54 Drive unit (Piezoelectric element) 54C Drive unit 55 Detection unit (Piezoelectric) 55A ... Detection part (piezoelectric element) 55B ... Detection part (piezoelectric element) 55C ... Detection part (piezoelectric element) 56 ... Detection part (piezoelectric element) 56C ... Detection part (piezoelectric) Body 57) ... terminal 57b ... terminal 57c ... terminal 57d ... terminal 57e ... terminal 57f ... terminal 59a ... terminal 59b ... terminal 59c ... terminal 59d ... terminal 59e ... terminal 59f ... Terminal 61 ... Insulator layer 61A ... Insulator layer 61B ... Insulator layer 62 ... Wiring 62A ... Wiring 62B ... Wiring 63 ... Insulator layer 63A ... Insulator layer 63B ... Insulator layer 64 ... allocation 64A ... Wiring 64B ... Wiring 65 ... Insulator layer 65D ... Insulator layer 65E ... Insulator layer 66 ... Wiring 66D ... Wiring 66E ... Wiring 67 ... Insulator layer 67D ... Insulator layer 67E ... Insulator layer 71 ... Internal terminal 72 ... Internal terminal 73 ... External terminal 81 ... Joining member 82 ... Joining member 100 ... Display section 201 ... Substrate 202 ... Conductor layer 203 ... Piezoelectric body Layer 204 ... Conductor layer 261 ... Fixed part 262 ... Beam part 263 ... Beam part 264 ... Beam part 265 ... Beam part 411 ... Plate body 412 ... Frame body 511 ... First electrode layer ( Lower electrode layer) 511A ... First electrode layer (lower electrode layer) 511B ... First electrode layer (lower electrode layer) 511C ... First electrode layer (lower electrode layer) 511D ... First electrode Layer (lower electrode layer) 511E ... 1st electrode layer (lower electrode layer) 512 ... Piezoelectric layer 512A ... Piezoelectric layer 512B ... Piezoelectric layer 512C ... Piezoelectric layer 512D ... Piezoelectric layer 512E ... Piezoelectric layer 513 Second electrode layer (upper electrode layer) 513A Second electrode layer (upper electrode layer) 513B Second electrode layer (upper electrode layer) 513C Second electrode layer (upper electrode layer) 513D... Second electrode layer (upper electrode layer) 513E ... Second electrode layer (upper electrode layer) 521 ... First electrode layer (lower electrode layer) 521C ... First electrode layer (lower part) Electrode layer) 521D ... 1st electrode layer (lower electrode layer) 521E ... 1st electrode layer (lower electrode layer) 522 ... ... Piezoelectric layer 522C ... ... Piezoelectric layer 522D ... ... Piezoelectric layer 522E ... Piezoelectric layer 523 2nd electrode layer (upper part) Electrode layer) 523C ... Second electrode layer (upper electrode layer) 523D ... Second electrode layer (upper electrode layer) 523E ... Second electrode layer (upper electrode layer) 531 ... First electrode layer (Lower electrode layer) 532 ... Piezoelectric layer 533 ... Second electrode layer (upper electrode layer) 541 ... First electrode layer (lower electrode layer) 542 ... Piezoelectric layer 543 ... Second electrode Layer (upper electrode layer) 551... First electrode layer (lower electrode layer) 551A... First electrode layer (lower electrode layer) 551B... First electrode layer (lower electrode layer) 552. Layer 552A ... Piezoelectric layer 552B ... Piezoelectric layer 553 ... Second electrode layer (upper electrode layer) 553A ... Second electrode layer (upper electrode layer) 553B ... Second electrode layer (upper electrode) Layer) 553B... Second electrode layer (upper electrode layer) 561... Layer (lower electrode layer) 562 ... Piezoelectric layer 563 ... Second electrode layer (upper electrode layer) 611 ... Part 621 ... Part 631 ... Part 641 ... Part 1100 ... Personal computer 1102 ... Keyboard DESCRIPTION OF SYMBOLS 1104 ... Main-body part 1106 ... Display unit 1200 ... Mobile phone 1202 ... Operation button 1204 ... Earpiece 1206 ... Mouthpiece 1300 ... Digital still camera 1302 ... Case 1304 ... Light receiving unit 1306 ... Shutter Button 1308 Memory 1312 Video signal output terminal 1314 Input / output terminal 1430 Television monitor 1440 Personal computer ω Angular speed

The base member 41 includes a flat plate body 411 (plate portion) and a frame body 412 (frame portion) joined to the outer peripheral portion of the upper surface of the plate body 411.
Such base member 41 is, for example, oxide Aluminum bromide sintered body, the crystal, and a glass or the like.
As shown in FIG. 1, the upper surface of the base member 41 (the surface covered with the lid member 42) is covered with a bonding member 81 such as an adhesive that includes an epoxy resin, an acrylic resin, or the like. The base 21 of the sensor element 2 is joined. Thereby, the sensor element 2 is supported and fixed to the base member 41.

In addition, the resonator element, the vibration device, and the electronic apparatus of the present invention may be combined with any configuration of each of the embodiments described above.
In the method for manufacturing a resonator element according to the invention, an arbitrary step can be added.
In the above-described embodiment, the case where the present invention is applied to a sensor element of a bipod tuning fork or an H type tuning fork has been described as an example. The present invention can be applied to various sensor elements (gyro elements) such as a prismatic type.
Further, the number of vibrating arms may be one or three or more as long as the piezoelectric element (driving unit or detecting unit) as described above is provided in at least one vibrating arm.

Claims (13)

The base,
A vibrating arm extending from the base;
A first lower electrode layer provided on the vibrating arm; a first upper electrode layer provided on a side opposite to the vibrating arm with respect to the first lower electrode layer; and the first lower electrode layer and the first lower electrode layer. A first piezoelectric element having a first piezoelectric layer provided between the upper electrode layer;
A wiring connected to the first upper electrode layer and having a portion provided along a side surface of the first piezoelectric layer;
An insulator layer provided between a side surface of the first piezoelectric layer and the first lower electrode layer and the wiring;
When the dielectric constant of the first piezoelectric layer is εp and the dielectric constant of the insulator layer is εi,
A resonator element satisfying a relationship of εp> εi. Having a terminal provided at the base,
The resonator element according to claim 1, wherein the terminal is electrically connected to the wiring. A detection unit for detecting bending vibration of the vibrating arm;
The resonator element according to claim 1, wherein the detection unit is the piezoelectric element. The insulator layer has a portion provided on the first upper electrode layer side with respect to the first piezoelectric layer,
4. The resonator element according to claim 1, wherein a part of the first upper electrode layer is interposed between the portion and the first piezoelectric layer. 5. The insulator layer has a portion provided on the first upper electrode layer side with respect to the first piezoelectric layer,
5. The resonator element according to claim 1, wherein the first upper electrode layer does not exist between the portion and the first piezoelectric layer. 6.   6. The resonator element according to claim 1, wherein a thickness of the insulator layer is thicker than a thickness of the first lower electrode layer.   7. The resonator element according to claim 1, wherein the side surface of the first piezoelectric layer is inclined with respect to a main surface of the first lower electrode layer.   The resonator element according to claim 1, wherein the first upper electrode layer and the wiring are made of the same material.   The resonator element according to claim 1, wherein the first upper electrode layer and the wiring are integrated. A second lower electrode layer provided on the vibrating arm; a second upper electrode layer provided on a side opposite to the vibrating arm with respect to the second lower electrode layer; and the second lower electrode layer and the second lower electrode layer. A second piezoelectric element having a second piezoelectric layer provided between two upper electrode layers;
The resonator element according to claim 1, wherein the wiring and the second lower electrode layer are electrically connected. A method for manufacturing a resonator element according to any one of claims 1 to 10,
Forming the first lower electrode layer, the first piezoelectric layer, and the first upper electrode layer;
Forming the insulator layer;
And a step of forming the wiring.   A vibration device comprising the resonator element according to claim 1.   An electronic apparatus comprising the resonator element according to claim 1.

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