JP2014143559A - Method of manufacturing electronic device, electronic device, and oscillator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a durable electronic device with a through electrode 3 prevented from corroding because of a battery effect between the through electrode and a metal film 7 formed thereover.SOLUTION: A method of manufacturing an electronic device 1 includes: a through electrode forming step S1 of forming a through electrode 3 in an insulating base substrate 2; an electronic element mounting step S2 of mounting an electronic element 5 on one surface US of the base substrate 2; a lid placing step S3 of joining a lid 6 accommodating the electronic element 5 to the base substrate 2; a resin film placing step S4 of placing a resin film 12 on the other surface of the base substrate 2 except for an end face M of the through electrode 3 exposed to that surface and a surface around the end face M; a catalytic treatment step S5 of applying a catalytic activation treatment to the end face M and the surface around the end face M; an external electrode forming step S6 of forming an external electrode 14 on the end face M and the surface around the end face M by electroless plating; and a resin film removal step S7 of removing the resin film 12 from the other surface LS of the base substrate 2.

Description

  The present invention relates to an electronic device manufacturing method in which an electronic element such as a crystal resonator is accommodated in a package, an electronic device, and an oscillator using the electronic device.

  2. Description of the Related Art Conventionally, surface-mounted electronic devices are often used for mobile phones and portable information terminals. Among these, a quartz resonator, a MEMS, a gyro, an acceleration sensor, and the like have a hollow cavity formed inside a package, and an electronic element such as a quartz resonator or MEMS is enclosed in the cavity. A glass material is used as the package. For example, an electronic element is mounted on a glass substrate, and a glass lid is bonded thereon by anodic bonding to seal the electronic element. Anodic bonding between glasses has the advantage of being highly airtight and inexpensive.

  FIG. 7 is a cross-sectional view of this type of electronic device (FIG. 1 of Patent Document 1). The electronic device 101 includes a base 110, an electronic component 140 mounted on the base 110, and a cap 150 that accommodates the electronic component 140 and is joined to the base 110. The base 110 has a through electrode 121 that penetrates in the plate thickness direction, a first metal film 122 that is electrically connected to the through electrode 121, and a circuit pattern 130 that electrically connects the through electrode 121 and the electronic component 140. And the 2nd metal film 123 is formed. An external electrode 160 made of a metal film is formed outside the first metal film 122.

  Here, an iron-nickel alloy is used for the through electrode 121. As the first metal film 122, gold formed by electroless plating is used. Further, a low-melting glass (not shown) is used between the through electrode 121 and the base 110, and the airtightness is improved by heat welding. When a low melting point glass is used for thermal welding to improve the airtightness between the through electrode 121 and the base 110, an oxide film is formed on the end face of the through electrode 121, and the conductivity between the other metal is reduced. Decreases. Therefore, after removing the oxide film formed during the thermal welding of the through electrode 121, the first metal film 122 and the second metal film 123 are formed on the end face of the through electrode 121 to prevent the through electrode 121 from being oxidized. ing.

JP 2011-155506 A

  An iron-nickel alloy is used as the through electrode 121, and a gold thin film is used as the first metal film 122 for preventing oxidation of the through electrode 121. Since there is a large difference in ionization tendency between the iron-nickel alloy and gold, if moisture or the like adheres between the through electrode 121 and the first metal film 122, the through electrode 121 is corroded by the battery effect, and the conductivity is lowered. Cause. In Patent Document 1, a low-melting glass is used between the through electrode 121 and the base 110, and a gold thin film of the first metal film 122 is formed on the end surface of the through electrode 121 by an electroless plating method. Since it is difficult to form a gold thin film by electroless plating on the low-melting glass, the boundary between the through electrode 121 and the first metal film 122 is exposed, and corrosion is more likely to proceed.

  The electronic device manufacturing method of the present invention includes a through electrode forming step of forming a through electrode on an insulating base substrate, an electronic element mounting step of mounting an electronic element on one surface of the base substrate, and the electronic device. A lid installation step for joining a lid to be accommodated to the base substrate, and a resin film is formed on the other surface of the base substrate except for an end face of the through electrode exposed on the surface and the surface around the end face. An external electrode formed by electroless plating on the end surface and the surface around the end surface; a resin film installation step to be installed; a catalyst treatment step for performing catalyst activation treatment on the end surface and the surface around the end surface; An external electrode forming step for forming the resin film, and a resin film removing step for removing the resin film from the other surface of the base substrate.

  The resin film installation step is performed after the electronic element mounting step and the lid installation step.

  The through electrode is an iron-nickel alloy.

  Further, the external electrode includes a nickel film or a copper film.

  The external electrode includes a gold thin film.

  The external electrode has a thickness of 1 μm to 10 μm.

  The electronic element is a crystal vibrating piece.

  The electronic device according to the present invention includes an insulating base substrate on which a plurality of through electrodes are formed, an electronic element mounted on one surface of the base substrate, and the electronic element is accommodated and bonded to the base substrate. A lid, and the base substrate has external electrodes formed on an end surface of the through electrode exposed on the other surface of the base substrate and the surface around the end surface, and the external electrode A metal catalyst was formed at the interface with the surface.

  In the electronic device of the present invention, the through electrode is made of an iron-nickel alloy, and the external electrode includes a conductive film formed by an electroless plating method.

  An oscillator according to the present invention includes the electronic device described above and a drive circuit that supplies a drive signal to the electronic device.

  The electronic device manufacturing method of the present invention includes a through electrode forming step of forming a through electrode on an insulating base substrate, an electronic element mounting step of mounting an electronic element on one surface of the base substrate, and housing the electronic device. A lid body installation step for joining the lid body to the base substrate; a resin film installation step for installing a resin film on the other surface of the base substrate except for an end surface of the through electrode exposed on the surface and a surface around the end surface; A catalyst treatment step for performing catalyst activation treatment on the end surface and the surface around the end surface, an external electrode formation step for forming an external electrode on the end surface and the surface around the end surface by an electroless plating method, and the other of the base substrate And a resin film removing step of removing the resin film from the surface. Thereby, corrosion of a penetration electrode can be prevented and an electronic device excellent in durability can be manufactured.

It is a cross-sectional schematic diagram of the electronic device which concerns on 1st embodiment of this invention. It is process drawing showing the manufacturing method of the electronic device which concerns on 2nd embodiment of this invention. It is explanatory drawing of the manufacturing process of the electronic device which concerns on 2nd embodiment of this invention. It is explanatory drawing of the manufacturing process of the electronic device which concerns on 2nd embodiment of this invention. It is process drawing showing the manufacturing method of the electronic device which concerns on 3rd embodiment of this invention. It is a top surface schematic diagram of the oscillator concerning a 4th embodiment of the present invention. It is sectional drawing of a conventionally well-known electronic device.

(First embodiment)
FIG. 1 is a schematic cross-sectional view of an electronic device 1 according to the first embodiment of the present invention. The electronic device 1 includes a base substrate 2 on which a through electrode is formed, an electronic element 5 mounted on one surface US of the base substrate 2, and a lid 6 that houses the electronic element 5 and is bonded to the base substrate 2. Is provided. The base substrate 2 has insulating properties and includes a plurality of through electrodes 3 that penetrate from one surface US to the other surface LS. A wiring electrode 8 is formed on one surface US of the base substrate 2 so as to cover the end face of the through electrode 3, and the electronic element 5 is mounted on the wiring electrode 8 via a metal bump 10. The lid 6 has a recess in the center, and the electronic element 5 is accommodated in the recess and is bonded to one surface US of the base substrate 2 via a bonding material 9. The base substrate 2 further includes external electrodes 14 formed on the end surface M of the through electrode 3 exposed on the other surface LS of the base substrate 2 and the other surface LS around the end surface M. A metal catalyst 20 is formed at the interface between the external electrode 14 and the other surface LS of the base substrate 2.

  Thus, by forming the metal catalyst 20 between the other surface LS of the base substrate 2 and the external electrode 14, the adhesion of the external electrode 14 to the surface LS is improved. As the metal catalyst 20, a metal material such as palladium, gold, or platinum can be used. When an electroless plating film is formed as the external electrode 14 by an electroless plating method, it is preferable to use palladium as the metal catalyst 20. The external electrode 14 is formed on the end surface M of the through electrode 3 and the surface LS around the end surface M. Therefore, the through electrode 3 does not come into contact with moisture or the like, and corrosion is prevented.

  The external electrode 14 may be a single layer or a structure in which a plurality of layers are stacked. For example, as external electrode 14, a laminated structure having a first layer of nickel film or copper film by electroless plating, a second layer of nickel film by electroless plating, and a third layer of gold thin film from the other surface LS side It can be. When an iron-nickel alloy is used for the through electrode 3 and a copper film is formed as the first layer, the difference in ionization tendency is large, and the through electrode 3 is easily corroded when contacted with moisture or the like. Therefore, the exposed surface of the first layer copper film is completely covered with the second layer nickel film. Further, a gold thin film is formed as the third layer in order to avoid the surface of the second layer from oxidizing and increasing the contact resistance of the external electrode 14. Since the electroless plating film is laminated on the surface of the electroless plating film, the corrosion preventing effect of the through electrode 3 can be further enhanced.

  For the base substrate 2, glass, ceramics, plastic, glass epoxy resin, or the like can be used. As the electronic element 5, a piezoelectric vibrating piece, a MEMS, an acceleration sensor, a light emitting element, a light receiving element, and other semiconductor elements can be used. The through electrode 3 can be made of Kovar, Invar, Permalloy, 42 alloy, iron-nickel alloy such as stainless steel, or other metal materials. The external electrode 14 can be a nickel film, a copper film, a gold film, a silver film, a platinum film, another metal film, an alloy film, or a laminated structure of these metal films and alloy films.

(Second embodiment)
FIG. 2 is a process diagram showing a method for manufacturing an electronic device according to the second embodiment of the present invention. 3 and 4 are explanatory diagrams of each step in the method for manufacturing an electronic device according to the second embodiment of the present invention. The same portions or portions having the same function are denoted by the same reference numerals.

  As shown in FIG. 2, the method for manufacturing an electronic device of the present invention includes a through electrode forming step S1, an electronic element mounting step S2, a lid installation step S3, a resin film installation step S4, and a catalyst treatment step S5. The external electrode forming step S6 and the resin film removing step S7 are provided. In the through electrode forming step S1, the through electrode is formed in the plate thickness direction on the insulating base substrate. In the electronic element mounting step S2, an electronic element is mounted on one surface of the base substrate. In the lid installation step S3, the lid that houses the electronic element is bonded to the base substrate. In the resin film installation step S4, a resin film is installed on the other surface of the base substrate except for the end surface of the through electrode exposed on the other surface and the surface around the end surface. In the catalyst treatment step S5, a catalyst activation treatment is performed on the end face of the through electrode exposed on the other surface of the base substrate and the surface around the end face. In the external electrode formation step S6, external electrodes are formed by electroless plating on the end surface of the through electrode exposed on the other surface of the base substrate and the surface around the end surface. In the resin film removing step S7, the resin film is removed from the other surface of the base substrate.

  In the manufacturing method of the present invention, the resin film is formed on the other surface of the base substrate by the resin film installation step S4 after the through electrode forming step S1 and before the electronic element mounting step S2, and then the catalyst The processing step S5, then the external electrode formation step S6 may be performed, then the electronic element may be mounted on one surface of the base substrate in the electronic element mounting step S2, and finally the lid installation step S3 may be performed. . Further, after the lid installation step S3 and before the resin film installation step S4, the other surface of the base substrate 2 is ground or polished to form the end surface of the through electrode and the other surface of the base substrate flush with each other. In addition, a grinding step for removing the oxide film formed on the end face can be added. Thereby, it can prevent that the electroconductivity between an external electrode and a penetration electrode falls. This will be specifically described below.

  FIG. 3 (S1) is a schematic cross-sectional view showing a state in which the through electrode 3 is formed on the insulating base substrate 2 in the through electrode forming step S1. As the base substrate 2, for example, an insulating substrate such as a glass substrate, a plastic substrate, or a glass epoxy resin substrate can be used. As the through electrode 3, Kovar, Invar, Permalloy, 42 alloy, iron-nickel alloys such as stainless steel, and other metal materials can be used. If a glass substrate is used as the base substrate 2 and Kovar is used as the through electrode 3, a thermal expansion coefficient can be approximated and a highly reliable package can be configured. Hereinafter, an example in which a glass substrate is used as the base substrate 2 and an iron-nickel alloy is used as the through electrode 3 will be described.

  The base substrate 2 made of glass is softened or melted, and through holes are formed by molding. The through hole is filled with an iron-nickel alloy wire, heated and softened, and the wire and glass are welded. After cooling the glass, both sides are polished and flattened, the end face M of the through electrode 3 is exposed to remove the oxide film, and the end face M and the surface of the base substrate 2 are formed flush with each other. For example, the planarized base substrate 2 has a thickness of 0.2 mm to 1 mm. The through hole of the base substrate 2 can also be formed by a sand blast method or an etching method.

  FIG. 3 (S2) is a schematic cross-sectional view showing a state in which the electronic element 5 is mounted on the base substrate 2 in the electronic element mounting step S2. A metal film is formed on one surface US by vapor deposition, sputtering, or the like, and the metal film is patterned by photolithography and etching to form the wiring electrode 8. The wiring electrode 8 may be formed by a printing method in addition to a vapor deposition method or a sputtering method. Next, the electronic element 5 is installed on the base substrate 2 by surface mounting via the metal bumps 10. Instead of surface mounting, the electronic element 5 may be bonded to the surface of the base substrate 2 with an adhesive or the like, and the wiring electrode 8 and the electronic element 5 may be electrically connected by wire bonding. When the electronic element 5 is a piezoelectric vibrating piece, the piezoelectric vibrating piece can be cantilevered on one surface US of the base substrate 2.

  FIG. 3 (S3) is a schematic cross-sectional view illustrating a state in which the lid body 6 is bonded to one surface US of the base substrate 2 in the lid body setting step S3. The same material as the base substrate 2, for example, a glass material can be used as the lid 6. The lid body 6 has a depression at the center, and a bonding material 9 is formed in advance on the upper end surface of the depression. As the bonding material 9, for example, a conductive film such as an aluminum film, a chromium film, or a silicon film, or a composite layer thereof is formed by a vapor deposition method, a sputtering method, or the like. Then, the electronic element 5 is accommodated in the central depression, and the base substrate 2 and the lid 6 are joined by anodic bonding. If the surroundings are evacuated at the time of bonding, the inside of the package in which the electronic element 5 is accommodated can be evacuated. For example, when a crystal vibrating piece is used as the electronic element 5, air resistance to physical vibration of the crystal vibrating piece can be eliminated by maintaining the inside of the package in a vacuum. In addition to the anodic bonding, the base substrate 2 and the lid body 6 can be bonded by intermetal bonding or an adhesive depending on the application.

  FIG. 3 (S4) shows resin in the resin film installation step S4 except for the end surface M of the through electrode 3 exposed on the other surface LS of the base substrate 2 and the surface LS around the end surface M. It is a cross-sectional schematic diagram showing the state which installed the film | membrane 12. By installing the resin film 12, a range in which the external electrode 14 is formed is set. Further, by installing the resin film 12 between the end face M and the other end face M, a short circuit between the through electrodes 3 is prevented via an external electrode formed later. The resin film 12 is formed by applying or attaching a photosensitive resin film made of resist or the like to the other surface LS of the base substrate 2 and performing exposure and development to form a pattern. The resin film 12 is disposed except for the region where the external electrode is formed, that is, the region of the end surface M and the surface LS around the end surface M. The resin film 12 may be installed by a printing method.

  FIG. 3 (S5) is a schematic cross-sectional view showing a state in which the catalyst activation process is performed on the end face M and the surface LS around the end face M in the catalyst treatment step S5. By performing the catalyst activation treatment, the electrodes can be formed in close contact with the base substrate 2 made of insulating glass by an electroless plating method. In the catalyst activation treatment, the metal catalyst 20 is adsorbed on the end face M and the surface LS around the end face M. Palladium, gold, platinum or the like can be used as the metal catalyst. When palladium is used, as the adsorption method, a method of treating the other surface LS of the base substrate 2 by immersing it in a tin-palladium mixed solution (catalyzer / accelerator method) can be used. In this method, tin is adsorbed on the base substrate 2 and substituted with palladium to fix palladium as a catalyst. In addition to the above method, a method of performing a palladium chloride treatment after the treatment of immersing the other surface LS of the base substrate 2 in an aqueous solution of stannous chloride (sensitizer / activator method) can also be used. In addition, the base substrate 2 on which the catalyst is adsorbed is subjected to pretreatment such as degreasing / cleaning and etching in advance. Even when the metal catalyst 20 adheres to the resin film 12, it is possible to remove the metal catalyst 20 attached by the resin film removal step described later.

  4 (S6-1) and FIG. 4 (S6-2) show that in the external electrode forming step S6, the external electrode 14 is formed on the end face M of the through electrode 3 and the surface LS around the end face M by electroless plating. It is a figure for demonstrating the state to do. The external electrode 14 is formed with the first layer nickel film 4 by electroless plating, then the second layer nickel film 11 by electroless plating, and then the third layer by electroless plating. A layered gold thin film 13 can be formed to form a laminated structure. By having a laminated structure, the effect of preventing corrosion of the through electrode 3 can be enhanced as compared with the case of a single layer. In the present invention, the formation of the nickel film 11 formed on the surface of the nickel film 4 and the gold thin film 13 formed on the surface of the nickel film 11 is not an essential requirement. The effect which prevents corrosion can be show | played.

  First, as shown in FIG. 4 (S6-1), the surface LS on which the metal catalyst 20 is fixed is immersed in an electroless plating solution to form a nickel film 4 having a thickness of 1 μm to 5 μm as an electroless plating film. As a result, the nickel film 4 adheres to the end face M and the surface LS around the end face M. That is, the end face M of the through electrode 3 and the surface around the end face M are covered as if capped by the nickel film 4. When the nickel film 4 is thinner than 1 μm, moisture or the like entering from the outside easily comes into contact with the through electrode 3, and when the nickel film 4 is thicker than 5 μm, the internal stress of the nickel film 4 acts on the base substrate 2 near the end face M. In such a case, chipping or cracking of the glass is likely to occur, and in either case, the reliability is lowered. In addition to the nickel film, a copper film or other metal film can be formed.

  Next, as shown in FIG. 4 (S6-2), a nickel film 11 is deposited as an electroless plating film on the surface of the nickel film 4 by an electroless plating method. A gold thin film 13 can be deposited as a plating film. By depositing the gold thin film 13 having a smaller ionization tendency than the nickel film, an oxide film is formed on the surface of the nickel film 11 to prevent the conductivity from decreasing and the contact resistance from increasing. Instead of the gold thin film 13, a metal material such as copper, silver, or platinum can be used. In addition, a palladium layer can be formed between the nickel film 11 and the gold thin film 13. Thereby, corrosion at the interface between the nickel film 11 and the gold thin film 13 can be prevented. Alternatively, the gold thin film 13 may be deposited directly on the surface of the nickel film 4 without depositing the nickel film 11 on the surface of the nickel film 4. The external electrode 14 has a thickness of 1 μm to 10 μm, preferably 1 μm to 5 μm. The nickel film 11 and the gold thin film 13 may be formed by vapor deposition or sputtering.

  FIG. 4 (S7) is a schematic cross-sectional view showing a state in which the resin film 12 is removed from the other surface LS of the base substrate 2 in the resin film removal step S7. The removal of the photosensitive resin film made of a resist or the like can be performed by a wet process using a stripping solution made of an alkali or an organic solvent, or by a dry process by ashing. When the resin film 12 is removed, the external electrode 14 having a laminated structure is left on the end face M of the through electrode 3 and the surface around the end face M.

  Thus, the nickel film 4 was formed on the end face M of the through electrode 3 made of an iron-nickel alloy and the glass surface around the end face, and the nickel film 11 and the gold thin film 13 were formed on the surface of the nickel film 4. Thus, corrosion of the through electrode 3 can be prevented, and an electronic device having excellent durability can be provided.

(Third embodiment)
FIG. 5 is a process diagram showing a method for manufacturing an electronic device according to the third embodiment of the present invention. This is a specific example of manufacturing an electronic device including a piezoelectric vibrator on which a piezoelectric vibrating piece is mounted as an electronic element. The present embodiment is a manufacturing method in which a glass wafer on which a large number of depressions are formed and a glass wafer on which a large number of electronic elements are mounted are overlapped and bonded to form a large number of electronic devices 1 simultaneously. The same steps are denoted by the same reference numerals.

  The electronic element 5 mounted on the base substrate is a piezoelectric vibrating piece made of a crystal resonator or the like. The lid forming step S20 will be described. A plate-like glass wafer made of soda-lime glass is prepared. First, in the polishing, cleaning, and etching step S21, the glass wafer is polished to a predetermined thickness, and after cleaning, an etching process is performed to remove the outermost work-affected layer. Next, in the dent forming step S22, a dent is formed in the center of the region where each electronic device is formed by hot press molding. Next, in the polishing step S23, the upper end surface around the recess is polished into a flat mirror surface. Next, in the bonding material deposition step S24, a bonding material made of aluminum, for example, is deposited to a thickness of 50 nm to 150 nm on the surface where the depressions are formed by sputtering or vapor deposition. Next, in the pattern forming step S25, the bonding material is removed from the surface other than the upper end surface around the recess by photolithography and etching. In this way, a lid made of a glass wafer is formed.

  The piezoelectric vibrating piece creating step S30 will be described. The quartz crystal is sliced at a predetermined angle to form a quartz wafer, and then the quartz wafer is ground and polished to a constant thickness. Next, the work-affected layer of the quartz wafer is removed by etching. Next, metal films are deposited on both surfaces of the quartz wafer, the metal film is patterned by photolithography and etching, and processed into excitation electrodes, wiring electrodes, and mount electrodes having a predetermined shape. Next, the quartz wafer is processed into the outer shape of the piezoelectric vibrating piece by photolithography and etching or dicing.

  The base substrate forming step S40 will be described. A glass wafer is prepared as a plate-like base substrate made of soda-lime glass. First, in the polishing, cleaning and etching step S41, the glass wafer is polished to a predetermined thickness, and after cleaning, an etching process is performed to remove the outermost work-affected layer. Next, in the through electrode forming step S1, a through hole is formed in the thickness direction of the glass wafer by grinding with a hot press mold, or after setting a mask on the surface and etching or sandblasting. Next, a through electrode made of an iron-nickel alloy is embedded in the through hole. Next, in the grinding step S42, both end portions of the through electrode and both surfaces of the glass wafer are polished and flattened to expose the end surface of the through electrode. Next, in a wiring electrode forming step S43, a metal film is deposited on one surface of the base substrate by sputtering or vapor deposition, and patterned into wiring electrodes by photolithography and etching.

  Next, in the electronic element mounting step S2, the piezoelectric vibrating piece is mounted on the surface of the base substrate. At the time of mounting, a conductive adhesive or a metal bump is placed on the wiring electrode of the base substrate, and a mount electrode of the piezoelectric vibrating piece is bonded thereon to fix the piezoelectric vibrating piece in a cantilever manner on the base substrate. Thus, the through electrode and the excitation electrode of the piezoelectric vibrating piece are electrically connected. Thus, a base substrate made of a glass wafer on which a large number of piezoelectric vibrating pieces are mounted is formed.

  Next, in the overlapping step S11, the lid body is placed on the base substrate so as to accommodate the respective piezoelectric vibrating reeds in the depressions of the lid body, and pressed from above and below. Next, in the lid installation step S3, the base substrate and the lid are heated to a temperature of 200 ° C. or higher, and a voltage of several hundred volts is applied using the lid bonding material as the anode and the base substrate as the cathode. The base substrate and the lid body are joined via each other. When joining, the surroundings are kept in a vacuum.

  Next, in the resin film installation step S4, a resin film is installed on the surface excluding the end surface of the through electrode exposed on the other surface of the base substrate and the surface around the end surface. The resin film is formed by photolithography or printing.

  Next, in the catalyst treatment step S5, a metal catalyst is adsorbed on the end face of the through electrode and the surrounding surface to perform a catalyst activation treatment. Next, in the external electrode forming step S6, external electrodes are formed on the end face of the through electrode and the surrounding surface by an electroless plating method. First, a nickel film or a copper film is deposited on the external electrode (see FIG. 4 (S6-1)), and a nickel film and a gold thin film are deposited thereon (see FIG. 4 (S6-2)). Next, in the resin film removing step S7, the resin film is removed from the other surface of the base substrate using a wet process using a stripping solution or a dry process using ashing to leave an external electrode.

  Next, in the cutting step S12, a scribe line is provided on the surface of the joined body, and the cutting blade is pressed to cleave, or is divided using a dicing blade or a dicing saw, and the individual electronic devices 1 are obtained. Next, in the electrical characteristic inspection step S13, the resonance frequency, resonance resistance value, and the like of the electronic device 1 are measured and inspected.

(Fourth embodiment)
FIG. 6 is a schematic top view of an oscillator 40 according to the fourth embodiment of the present invention. The electronic device 1 described in the first embodiment or the electronic device 1 manufactured by the manufacturing method described in the second or third embodiment is incorporated. As shown in FIG. 6, the oscillator 40 includes a substrate 43, the electronic device 1 installed on the substrate, an integrated circuit 41, and an electronic component 42. The electronic device 1 generates a signal having a constant frequency based on a drive signal applied to the external electrode, and the integrated circuit 41 and the electronic component 42 process the signal having the constant frequency supplied from the electronic device 1 to generate a clock signal. And so on. Since the electronic device 1 according to the present invention can be formed with high reliability and a small size, the entire oscillator 40 can be configured compactly.

DESCRIPTION OF SYMBOLS 1 Electronic device 2 Base substrate 3 Through electrode 4 Nickel film 5 Electronic element 6 Cover body 7 Metal film 8 Wiring electrode 9 Joining material 10 Metal bump 11 Nickel film 12 Resin film 13 Gold thin film 14 External electrode 20 Metal catalyst US One surface, LS The other surface, M end face

Claims (10)

A through electrode forming step of forming a through electrode on an insulating base substrate;
An electronic element mounting step of mounting an electronic element on one surface of the base substrate;
A lid installation step for joining a lid for housing the electronic element to the base substrate;
A resin film installation step of installing a resin film on the other surface of the base substrate, excluding the end surface of the through electrode exposed on the surface and the surface around the end surface;
A catalyst treatment step of performing a catalyst activation treatment on the end face and the surface around the end face;
Forming an external electrode by an electroless plating method on the end surface and the surface around the end surface; and
And a resin film removing step of removing the resin film from the other surface of the base substrate.   The manufacturing method of the electronic device of Claim 1 which performs the said resin film installation process after the said electronic element mounting process and a cover body installation process.   The method of manufacturing an electronic device according to claim 1, wherein the through electrode is an iron-nickel alloy.   The said external electrode is a manufacturing method of the electronic device as described in any one of Claims 1-3 containing a nickel film or a copper film.   The said external electrode is a manufacturing method of the electronic device as described in any one of Claims 1-4 containing a gold thin film.   The method of manufacturing an electronic device according to claim 1, wherein the external electrode has a thickness of 1 μm to 10 μm.   The method of manufacturing an electronic device according to claim 1, wherein the electronic element is a crystal vibrating piece. An insulating base substrate on which a plurality of through electrodes are formed;
An electronic device mounted on one surface of the base substrate;
A lid that houses the electronic element and is bonded to the base substrate,
The base substrate has external electrodes formed on the end surface of the through electrode exposed on the other surface of the base substrate and the surface around the end surface;
An electronic device in which a metal catalyst is formed at an interface between the external electrode and the surface.   The electronic device according to claim 8, wherein the through electrode is made of an iron-nickel alloy, and the external electrode includes a conductive film formed by an electroless plating method. An electronic device according to claim 8,
An oscillator comprising: a drive circuit that supplies a drive signal to the electronic device.

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