JP2014216588A - Light-emitting device, method of manufacturing the same, image display device, and image formation device - Google Patents

Abstract

A light emitting device with small intensity variation of emitted light, a manufacturing method thereof, an image forming apparatus, and an image display device with small luminance variation are provided. A light emitting device, an image display device, and an image forming apparatus include a substrate 10, at least one semiconductor light emitting element 20 provided on the substrate 10, and a position on the substrate 10 away from the semiconductor light emitting element 20. The hole structure 42 is formed of an inclined surface 41 formed so as to surround the side surface of the semiconductor light emitting device 20, and has a small diameter on the substrate 10 side and a large diameter on the opening 43 side. And a light reflecting film 50 that is provided on the inclined surface 41 and emits light emitted from the semiconductor light emitting element 20 toward the outside of the hole structure 42. And have. [Selection] Figure 1

Description

  The present invention relates to a light emitting device including a semiconductor light emitting element provided on a substrate, a method for manufacturing the light emitting device, and an image display device and an image forming apparatus including a plurality of semiconductor light emitting elements provided on the substrate. .

  There is a proposal of an LED display device including a plurality of light emitting diode (LED) chips arranged two-dimensionally (see, for example, Patent Document 1). In Patent Document 1, a plurality of concave reflecting mirrors are formed on the surface of a silicon substrate using etching, a wiring layer is formed at the bottom of the plurality of concave reflecting mirrors, and then a plurality of LED chips are collectively placed on the plurality of wiring layers. Thus, a technique for mounting (adhesion) is disclosed.

JP-A-7-287535 (paragraph 0008, FIG. 1 and FIG. 2)

  However, in the above prior art, since a plurality of LED chips are collectively mounted on the bottom of the plurality of concave reflecting mirrors formed on the surface of the silicon substrate, it is difficult to increase the accuracy of the bonding position. When the relative positional relationship between the concave reflecting mirror and the LED chip varies due to the deviation of the bonding position, the problem is that the intensity of the light reflected at the concave reflecting boundary and emitted forward also varies. there were.

  Accordingly, an object of the present invention is to provide a light emitting device that can reduce variations in the intensity of emitted light and a method for manufacturing the same, an image display device that has a small variation in luminance within the display surface, and the intensity of irradiation light from an exposure light source. An object of the present invention is to provide an image forming apparatus with small variations.

  A light-emitting device according to one embodiment of the present invention includes a substrate, at least one semiconductor light-emitting element provided on the substrate, and a side surface of the semiconductor light-emitting element at a position away from the semiconductor light-emitting element on the substrate. A hole structure comprising an inclined surface formed so as to enclose, wherein the hole structure is formed to have a small diameter on the substrate side and a large diameter on the opening side, and is formed thicker than the semiconductor light emitting element. And a light reflection film that is provided on the inclined surface and emits light emitted from the semiconductor light emitting element toward the outside of the hole structure.

  An image display device according to another aspect of the present invention includes a substrate, a plurality of semiconductor light emitting elements regularly arranged on the substrate, and the semiconductor light emitting device at a position away from the semiconductor light emitting element on the substrate. A plurality of hole structures comprising a plurality of inclined surfaces formed so as to surround a side surface of the element, wherein the plurality of hole structures are formed so as to have a small diameter on the substrate side and a large diameter on the opening side; And a plurality of light reflections that are provided on the plurality of inclined surfaces and emit light emitted from the semiconductor light emitting element toward the outside of the hole structure. And a film.

  An image forming apparatus according to another aspect of the present invention is an image forming apparatus having an exposure device that exposes a photosensitive member, and the exposure device includes a substrate and a plurality of semiconductors regularly arranged on the substrate. A plurality of hole structures each including a light emitting element and a plurality of inclined surfaces formed so as to surround a side surface of the semiconductor light emitting element at a position away from the semiconductor light emitting element on the substrate, and having a small diameter on the substrate side And having a plurality of hole structures formed to have a large diameter on the opening side, and having a sidewall structure layer formed thicker than the semiconductor light emitting element, and provided on the plurality of inclined surfaces, the semiconductor light emitting And a plurality of light reflecting films that emit light emitted from the element toward the outside of the hole structure.

  A method of manufacturing a light emitting device according to another aspect of the present invention includes a step of bonding a semiconductor light emitting element on a substrate, and a sidewall structure layer thicker than the semiconductor light emitting element so as to cover the semiconductor light emitting element on the substrate. And a hole structure comprising an inclined surface formed on the side wall structure layer so as to surround a side surface of the semiconductor light emitting element at a position away from the semiconductor light emitting element, and having a small diameter on the substrate side. Forming the hole structure to have a large diameter on the opening side, and forming a light reflecting film on the inclined surface for emitting light emitted from the semiconductor light emitting element toward the outside of the hole structure And a step of performing.

  According to the light-emitting device of one embodiment of the present invention, there is an effect that variation in intensity of emitted light can be reduced.

  In addition, according to the image display device according to another aspect of the present invention, there is an effect that variation in luminance within the display surface can be reduced.

  In addition, according to the image forming apparatus according to another aspect of the present invention, it is possible to reduce the variation in the amount of irradiation light of the exposure light source.

  In addition, according to the method for manufacturing a light emitting device according to another aspect of the present invention, there is an effect that variation in intensity of emitted light from the light emitting device can be reduced.

1 is a longitudinal sectional view schematically showing a structure of a light emitting device according to a first embodiment of the present invention. FIG. 2 is a plan view schematically showing the structure of the light emitting device of FIG. 1. It is a longitudinal cross-sectional view (the 1) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (the 2) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (the 3) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (the 4) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (the 5) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (the 6) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (the 7) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (the 8) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (the 1) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 1st modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 2) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 1st modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 3) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 1st modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 4) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 1st modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 5) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 1st modification of 1st Embodiment. It is a longitudinal cross-sectional view which shows roughly the structure of the light-emitting device which concerns on the 2nd modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 1) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 2nd modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 2) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 2nd modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 3) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 2nd modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 4) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 2nd modification of 1st Embodiment. It is a longitudinal cross-sectional view (the 5) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on the 2nd modification of 1st Embodiment. It is a top view which shows roughly the structure of the image display module of the image display apparatus with which the light-emitting device which concerns on 1st Embodiment was applied. It is a top view which shows roughly the structure of the semiconductor light-emitting element array of the image forming apparatus with which the light-emitting device which concerns on 1st Embodiment was applied. It is a longitudinal cross-sectional view which shows roughly the structure of the light-emitting device which concerns on the 2nd Embodiment of this invention. It is a longitudinal cross-sectional view (the 1) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 2nd Embodiment. It is a longitudinal cross-sectional view (the 2) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 2nd Embodiment. It is a longitudinal cross-sectional view (the 3) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 2nd Embodiment. It is a longitudinal cross-sectional view (the 4) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 2nd Embodiment. It is a longitudinal cross-sectional view which shows roughly the structure of the light-emitting device which concerns on the 3rd Embodiment of this invention. It is a longitudinal cross-sectional view (the 1) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 3rd Embodiment. It is a longitudinal cross-sectional view (the 2) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 3rd Embodiment. It is a longitudinal cross-sectional view (the 3) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 3rd Embodiment. It is a longitudinal cross-sectional view (the 4) which shows schematically the process of the manufacturing method of the light-emitting device which concerns on 3rd Embodiment. It is a figure which shows roughly the structure of the light-emitting device contained in the image display apparatus which concerns on the 4th Embodiment of this invention. FIG. 35 is a vertical cross-sectional view (part 1) schematically showing a process of a method for manufacturing a light emitting device in a region on an end side of the image display device in FIG. 34; FIG. 35 is a longitudinal sectional view (No. 2) schematically showing a step of a method for manufacturing a light emitting device in a region on the end side of the image display device in FIG. 34; FIG. 35 is a longitudinal cross-sectional view (part 3) schematically showing a process of a method for manufacturing a light emitting device in a region on an end side of the image display device in FIG. 34; FIG. 35 is a longitudinal sectional view (No. 1) schematically showing steps of a method for manufacturing a light emitting device in a central region of the image display device in FIG. 34; FIG. 35 is a longitudinal sectional view (No. 2) schematically showing a step of a method for manufacturing the light emitting device in the central region of the image display device in FIG. 34; FIG. 35 is a longitudinal cross-sectional view (part 3) schematically showing a process of the method for manufacturing the light emitting device in the central region of the image display device in FIG. 34; It is a figure which shows roughly the structure of the light-emitting device contained in the image display apparatus which concerns on the modification of the 4th Embodiment of this invention. FIG. 42 is a longitudinal sectional view (No. 1) schematically showing a step of a method for manufacturing a light emitting device in an end side region of the image display device in FIG. 41; FIG. 42 is a longitudinal sectional view (No. 2) schematically showing a step of a method for manufacturing the light emitting device in the region on the end portion side of the image display device in FIG. 41; FIG. 42 is a longitudinal sectional view (No. 1) schematically showing a step of a method for manufacturing the light emitting device in the central region of the image display device in FIG. 41; FIG. 42 is a longitudinal cross-sectional view (No. 2) schematically showing steps of a method for manufacturing the light-emitting device in the central region of the image display device in FIG. 41. It is a figure which shows roughly the structure of the image display apparatus containing the light source device which concerns on 4th Embodiment.

<< 1 >> First Embodiment << 1-1 >> Light-Emitting Device According to First Embodiment First, the structure of the light-emitting device 1 according to the first embodiment of the present invention will be described. FIG. 1 is a longitudinal sectional view schematically showing the structure of the light emitting device 1 according to the first embodiment, and FIG. 2 is a plan view schematically showing the structure of the light emitting device 1. FIG. 1 shows a cross section of FIG. 2 taken along line S1-S1. The light emitting device 1 shown in FIGS. 1 and 2 is an example of a pixel structure of the image display device (reference numeral 3 in FIG. 22 described later) according to the first embodiment. The light-emitting device 1 shown in FIGS. 1 and 2 is an example of the structure of the exposure light source of the image forming apparatus (reference numeral 4 in FIG. 23 described later) according to the first embodiment. However, the use of the light emitting device 1 according to the first embodiment is not limited to the image display device and the image forming device, and various light sources such as a light source of a lighting device provided indoors or in an apparatus, for example. Is available as

  As shown in FIG. 1, the light emitting device 1 according to the first embodiment includes a substrate 10, at least one semiconductor light emitting element 20 provided on the substrate 10, and a sidewall structure layer formed on the substrate 10. 40 and the light reflecting film 50 provided on the inclined surface 41 of the sidewall structure layer 40. In FIG. 1, one combination of the semiconductor light emitting element 20 and the light reflecting film 50 is illustrated on the substrate 10, but a plurality of combinations of the semiconductor light emitting element 20 and the light reflecting film 50 may be provided on the substrate 10. Good.

  As shown in FIG. 1, the substrate 10 includes, for example, a silicon substrate 11 as an integrated circuit substrate on which an integrated circuit is formed, and an interlayer insulating film (first interlayer insulating film) 12 formed on the silicon substrate 11. And a common wiring layer 13 formed on the interlayer insulating film 12. The region to which the semiconductor light emitting element 20 is bonded on the surface of the substrate 10 is desirably a flat region having no step. The structure of the substrate 10 is not limited to the illustrated example, and may be another structure having a flat region where the semiconductor light emitting element 20 can be bonded to the surface. Further, the substrate 10 may have, for example, a multilayer wiring structure in which other interlayer insulating films and other wiring layers are further laminated.

  As shown in FIG. 1, the semiconductor light emitting device 20 includes, for example, a lower contact layer 21, a lower cladding layer 22, an active layer 23, an upper cladding layer 24, and an upper contact layer 25 that are stacked. It is a light emitting diode (LED) having a thin film or film structure. The semiconductor light emitting element 20 is formed, for example, by epitaxial growth on a semiconductor light emitting element forming substrate (growth substrate) 60 (FIG. 3) different from the substrate 10, peeled (separated) from the growth substrate 60, and carrier substrate 70 (FIG. 3 is an LED epitaxial film that has been moved and adhered onto the substrate 10. In the example of FIG. 1, the semiconductor light emitting element 20 is disposed so as to be electrically connected to the common wiring layer 13. Further, an interlayer insulating film (second interlayer insulating film) 31 is formed on the semiconductor light emitting element 20 so as to expose the upper contact layer 25 of the semiconductor light emitting element 20, and the upper contact layer of the semiconductor light emitting element 20. An individual wiring layer 32 is formed in a region from above 25 to the interlayer insulating film 31. Further, an interlayer insulating film (third interlayer insulating film) 33 is formed on the individual wiring layer 32.

  The sidewall structure layer 40 is made of, for example, an insulating material. As shown in FIG. 1, the side wall structure layer 40 has a hole structure 42 including an inclined surface 41 formed on the substrate 10 so as to surround the side surface of the semiconductor light emitting element 20 at a position away from the semiconductor light emitting element 20. Have. The shape of the hole structure 42 is formed so as to have a small diameter on the substrate 10 side and a large diameter on the opening 43 side (that is, on the substrate 10 so as to have a reverse truncated cone shape). That is, the inclined surface 41 forming the hole structure 42 is formed in a tapered shape so as to have a small diameter on the substrate 10 side and a larger diameter as the opening 43 is approached. Further, the thickness T40 of the sidewall structure layer 40 is desirably formed to be thicker than the thickness T20 of the semiconductor light emitting element 20.

  As shown in FIG. 1, the light reflecting film 50 is a light reflecting member provided on the inclined surface 41 of the sidewall structure layer 40 so as to cover the entire inclined surface 41. In contrast, a metal material having a high reflectance (for example, a metal material mainly composed of aluminum (Al), gold (Au), or silver (Ag)) is formed. The light reflecting film 50 can be formed by, for example, a lithography technique, a sputtering method, or a vapor deposition method. The light reflecting film 50 has the same shape as the inclined surface 41 (that is, a cup shape or a taper shape).

  By applying a driving voltage between the individual wiring layer 32 and the common wiring layer 13, light is emitted from the active layer 23 sandwiched between the lower cladding layer 22 and the upper cladding layer 24. The light is reflected directly or by the light reflecting film 50 and is emitted toward the outside of the hole structure 42 (upper side in FIG. 1).

<< 1-2 >> Method for Manufacturing Light-Emitting Device According to First Embodiment Next, a method for manufacturing a light-emitting device according to the first embodiment will be described. 3 to 10 are longitudinal sectional views (parts 1 to 10) schematically showing steps of the method for manufacturing the light emitting device 1 according to the first embodiment.

In manufacturing the light emitting device 1, first, the substrate 10 is prepared. The substrate 10 is formed by forming an interlayer insulating film 12 on the surface of a silicon substrate 11 that is an integrated circuit substrate, and forming a common wiring layer 13 that is a lower common wiring on the interlayer insulating film 12. . The interlayer insulating film 12 is formed by, for example, a plasma CVD (chemical vapor deposition) method, a sputtering method, or a thermal oxidation method. The interlayer insulating film 12 is formed from an insulating material such as SiN, Al ₂ O ₃ , or SiO ₂ , for example. The interlayer insulating film 12 may have a structure in which a plurality of insulating films are stacked. The common wiring layer 13 is formed of a conductive material. As the common wiring layer 13, for example, a metal material such as gold (Au) or aluminum (Al) can be used. The common wiring layer 13 can be formed by, for example, a lithography technique and a vapor deposition method or a sputtering method. However, the structure and formation method of the substrate 10 are not limited to this example.

  In manufacturing the light emitting device 1, the semiconductor light emitting element 20 is formed in advance on the growth substrate 60 with the release layer 61 interposed. The film thickness of the semiconductor light emitting element 20 is desirably a thin film shape of, for example, 1 [μm] or more and 5 [μm] or less. The semiconductor light emitting device 20 has a structure in which a lower contact layer 21, a lower cladding layer 22, an active layer 23, an upper cladding layer 24, and an upper contact layer 25 are sequentially stacked. Each semiconductor layer constituting the semiconductor light emitting device 20 can be grown by, for example, a metal organic chemical vapor deposition (MOCVD) method and a molecular beam epitaxy (MBE) method. The semiconductor light emitting element 20 is an epitaxial film type semiconductor composed of, for example, a nitride material or a gallium arsenide (GaAs) material. As the growth substrate 60, for example, a sapphire substrate, a SiC substrate, a GaN substrate, or the like can be used.

When the semiconductor light emitting element 20 is formed of a nitride material, for example, the upper contact layer 25 is formed of p-GaN, and the upper cladding layer 24 is formed of p-Al _x Ga _1-x N (0 <x ≦ 1). And the active layer 23 is formed of an In _y Ga _1-y N (0 <y ≦ 1) layer as a well layer and an In _z Ga _1-z N (0 ≦ z <1) layer as a barrier layer. And a lower cladding layer 22 is formed of n-Al _x1 Ga _1-x1 N (0 ≦ x1 ≦ 1), and a lower contact is formed. Layer 21 can be formed of n-GaN. In this case, the semiconductor light emitting element 20 can be separated in a thin film shape by polishing the sapphire substrate, which is the growth substrate 60 of the semiconductor light emitting element 20, from the back surface. Further, the semiconductor light emitting element 20 may be peeled off from the sapphire substrate which is the growth substrate 60 by a laser lift-off method.

When the semiconductor light emitting element 20 is formed of a GaAs-based material, for example, the upper contact layer 25 is formed of p-GaP, and the upper cladding layer 24 is formed of p-Al _x Ga _1-x As (0 ≦ x <1). The active layer 23 is formed of (Al _y Ga _1-y ) _y1 In _1-y1 P (0 <y, y1 ≦ 1, y + y1 = 1) as a well layer and (Al _z Ga ₁ as a barrier layer). _-Z ) _{z1In1 -z1P} (0 <z, z1≤1, z + z1 = 1) is formed with an MQW structure in which a plurality of quantum wells are stacked, and the lower cladding layer 22 is formed of n-Al _The lower contact layer 21 can be formed of n-GaAs by using _w Ga _1-W As (0 <w <1). In this case, as the peeling layer 61 of the growth substrate 60, a layer that can be selectively etched, for example, an AlAs layer is inserted, and only the AlAs layer is selectively etched, whereby the semiconductor light emitting device 20 is grown on the growth substrate 60. Can be peeled off.

  Next, as shown in FIG. 3, the semiconductor light emitting element 20 formed on the growth substrate 60 is peeled (separated) from the growth substrate 60, and the substrate 10 is formed by a carrier substrate 70 as a movable holding member. Bonding is performed at a predetermined position on the common wiring layer 13. As shown in FIG. 4, the semiconductor light emitting element 20 is directly bonded to the flat surface of the common wiring layer 13 by, for example, intermolecular force. However, these may be bonded by interposing a conductive paste or the like between the semiconductor light emitting element 20 and the surface of the common wiring layer 13. The lower contact layer 21 of the semiconductor light emitting element 20 is electrically connected to the common wiring layer 13. The number of semiconductor light emitting elements 20 arranged on the substrate 10 is not limited to one, and a plurality of semiconductor light emitting elements 20 may be arranged in a one-dimensional shape (line shape) or a two-dimensional shape (matrix shape).

Next, as shown in FIG. 5, an interlayer insulating film (second interlayer insulating film) made of, for example, SiN, Al ₂ O _3, or SiO ₂ so as to cover the mesa end face that is the side wall of the semiconductor light emitting element 20. 31 is formed by plasma CVD or sputtering. Then, a portion of the interlayer insulating film 31 on the upper contact layer 25 is opened by wet etching or dry etching to expose the upper surface of the upper contact layer 25.

  Next, on the upper contact layer 25 and the interlayer insulating film 31, for example, an individual wiring layer 32 made of a metal material with Au or Al as a main material is formed. The individual wiring layer 32 is formed by extending along the interlayer insulating film 31 covering the semiconductor light emitting element 20. In this manner, the semiconductor light emitting elements 20 electrically connected to the individual wiring layer 32 and the common wiring layer 13 on the substrate 10 are regularly arranged in a one-dimensional manner, whereby the image forming apparatus (FIG. 23) is arranged. An exposure light source can be formed, or an image display panel of an image display device (FIG. 22) can be formed by regularly arranging in two dimensions.

Next, an interlayer insulating film (third interlayer insulating film) 33 is formed on the individual wiring layer 32 and the interlayer insulating film 31. The interlayer insulating film 33 is an insulating film made of, for example, SiN, Al ₂ O ₃ or SiO ₂ formed by a plasma CVD method or a sputtering method. The light reflecting film 50 and the upper contact layer 25 are electrically separated by the interlayer insulating film 33, and the light reflecting film 50 and the individual wiring layer 32 are electrically separated.

  Next, as shown in FIG. 6, a photosensitive material layer 40 a such as a photosensitive organic insulating film is formed on the interlayer insulating film 33 formed on the surface of the semiconductor light emitting element 20 so as to cover the semiconductor light emitting element 20. Form. In the example of FIG. 6, the photosensitive material layer 40a is of a negative type and is made of a material whose cross-linking is promoted by chemical amplification. The photosensitive material layer 40a is formed by, for example, a method of laminating a dry film, which is a photosensitive resin, on the interlayer insulating film 33, or a method of forming a photosensitive resin that can be applied by spin coating or slit coating. is there. And as the film thickness of the photosensitive material layer 40a (that is, the film thickness of the side wall structure layer 40), in order to efficiently reflect the light emitted from the semiconductor light emitting element 20 in the lateral direction, It is desirable that the height is 10 [μm] or more.

  Next, as shown in FIG. 7, exposure light 90 is irradiated onto the photosensitive material layer 40 a by using an exposure photomask 80 so that the surface of the substrate 10 is focused on the exposure focus. In designing the exposure region of the photomask 80 for exposure, the region serving as the bottom surface of the cup-shaped light reflection film (also referred to as “reflection cup”) formed by the light reflection film 50 is designed to be shielded from light. By this exposure, an exposed area 40a1 which is a shaded area (gray area in the figure) at both ends of the photosensitive material layer 40a in FIG. 7 and a non-exposed area (non-photosensitive area) 40a2 other than the exposed area 40a1 are formed. Is done. The exposure amount by this exposure increases as it approaches the focal position (that is, the surface (upper surface) position of the substrate 10), and decreases as it approaches a position far from the focal position (that is, the surface (upper surface) position of the photosensitive material layer 40a). . In the exposure region 40a1 of the photosensitive material layer 40a in FIG. 7, a region where the exposure amount is large is indicated by “dark gray region”, and a region where the exposure amount is small is indicated by “light gray region”.

  Next, as shown in FIG. 8, by performing heat treatment, crosslinking of the exposure region 40 a 1 is promoted to form a crosslinked region. The cross-linking of the exposure region by this heat treatment is larger as it is closer to the focal position (that is, the surface position of the substrate 10), and is smaller as it is closer to the position far from the focal position (that is, the surface position of the photosensitive material layer 40a). In FIG. 7, in the exposure region 40a1 of the photosensitive material layer 40a, a region where the exposure amount is large is indicated by “dark gray region”, and a region where the exposure amount is small is indicated by “light gray region”. By adjusting the region exposure conditions (the shape of the photomask, the distance between the photomask and the object to be exposed, the amount of light for exposure, etc.) or the crosslinking conditions (heating temperature, heating time, etc.), it is shown in FIG. An exposure region 40a1 that can form a desired tapered inclined surface 41 and hole structure 42 can be formed.

  Next, as shown in FIG. 9, by performing development processing, the non-exposed region 40a2 is developed and removed, and the sidewall structure layer 40 is formed from the photosensitive material layer 40a. At this time, the development rate is fast near the surface layer with weak crosslinking (that is, near the surface of the photosensitive material layer 40), and the development rate is slow near the top surface of the substrate 10 with strong crosslinking (that is, near the bottom surface of the photosensitive material layer 40). Therefore, a hole structure 42 having a tapered structure is formed such that the diameter is smaller as it is closer to the upper surface of the substrate 10 and the diameter is larger as it is closer to the opening 43.

  Next, as shown in FIG. 10, the light reflecting film 50 is made of a metal material having a high reflectance with respect to the emission wavelength, for example, a metal material mainly composed of Al, Au, or Ag so as to cover the inclined surface 41. Form. The light reflecting film 50 can be formed by, for example, a lithography technique, a sputtering method, or a vapor deposition method.

<< 1-3 >> Method for Manufacturing Light-Emitting Device According to First Modification of First Embodiment Next, a method for manufacturing a light-emitting device according to a first modification of the first embodiment will be described. 11 to 15 are longitudinal sectional views (Nos. 1 to 5) schematically showing steps of the method for manufacturing the light emitting device according to the first modification of the first embodiment. The manufacturing method of the light emitting device according to the first modification of the first embodiment shown in FIGS. 11 to 15 only uses, for example, a positive type photosensitive organic insulating film as the photosensitive material layer 140a. However, this is different from the manufacturing method of the light emitting device according to the first embodiment shown in FIGS. 3 to 10 using the negative photosensitive organic insulating film. 11 to 15, the same reference numerals are given to the same or corresponding components as those shown in FIGS. 3 to 10. Hereinafter, a method for manufacturing the light emitting device according to the first modification of the first embodiment shown in FIGS. 11 to 15 will be described focusing on differences from the examples of FIGS. 3 to 10.

  First, the semiconductor light emitting element 20 is bonded on the substrate 10 to form the interlayer insulating film 31, the individual wiring layer 32, and the interlayer insulating film 33. These steps are the same as those shown in FIGS.

  Next, as shown in FIG. 11, a positive photosensitive material layer 140a is formed. The film forming method and thickness of the photosensitive material layer 140a are the same as the film forming method of the photosensitive material layer 40a described with reference to FIG.

  Next, as shown in FIG. 12, exposure light 190 is irradiated to the photosensitive material layer 140a with the exposure focus on the surface of the photosensitive material layer 140a using the photomask 180 for exposure. As the design of the exposure region of the photomask 180 for exposure, the region other than the region on the upper surface of the reflection cup where the light reflecting film 50 is formed is shielded, or the region other than the region slightly larger than the upper surface of the reflection cup is shielded. To design. By this exposure, a non-exposure region 140a2 having an exposure amount equal to or smaller than a predetermined reference amount and an exposure region (photosensitive region) 140a1 other than the non-exposure region 140a2 are formed as in the regions at both ends of the photosensitive material layer 140a in FIG. The At this time, the light 190 for exposure is gradually absorbed and cannot reach the deeper portion as it goes deeper in the photosensitive material layer 140a (lower side in FIG. 12). As a result, the tapered exposure region 140a1 is formed. It is formed.

  Next, as shown in FIG. 13, by adjusting the exposure conditions (the shape of the photomask, the distance between the photomask and the object to be exposed, the amount of light for exposure, etc.), a desired tapered inclination angle is obtained. 41 and the exposure area | region 140a1 which can form the hole structure 42 can be formed.

  Next, as shown in FIG. 14, by performing development processing, the exposed region 140a1 is developed and removed, and the sidewall structure layer 40 is formed from the photosensitive material layer 140a. At this time, a hole structure 42 having a tapered structure having a small diameter on the substrate 10 side and a larger diameter as the opening 43 is approached is formed.

  Next, as shown in FIG. 15, the light reflection film 50 is made of a metal material having a high reflectance with respect to the emission wavelength, for example, a metal material mainly composed of Al, Au, or Ag so as to cover the inclined surface 41. Form. The light reflecting film 50 can be formed by, for example, a lithography technique, a sputtering method, or a vapor deposition method.

<< 1-4 >> A light emitting device according to a second modification of the first embodiment and a manufacturing method thereof Next, a light emitting device according to a second modification of the first embodiment of the present invention and a manufacturing method thereof will be described. . FIG. 16 is a longitudinal sectional view schematically showing the structure of the light emitting device 2 according to a second modification of the first embodiment. In FIG. 16, the same reference numerals are given to the same or corresponding components as those shown in FIG. The light emitting device 2 shown in FIG. 16 is different from the light reflecting film 50 shown in FIG. 1 in that the light reflecting film 250 has a concave mirror shape. The light emitting device 2 is the same as the light emitting device 1 except for the side wall structure layer 240, the inclined surface 241, the hole structure 242, the opening 243, and the light reflecting film 250. The light emitting device 2 shown in FIG. 16 is the same as the light emitting device 1 in that it can be used as an image display device, an image forming device, and other light sources.

  Next, a method for manufacturing the light emitting device 2 according to the second modification of the first embodiment will be described. FIGS. 17 to 21 are longitudinal sectional views (Nos. 1 to 5) schematically showing steps of the method for manufacturing the light emitting device 2 according to the second modification of the first embodiment. The manufacturing method of the light emitting device 2 according to the second modification of the first embodiment shown in FIG. 17 to FIG. 21 includes a sidewall structure layer 240 having a concave surface (longitudinal sectional shape is curved) and a concave mirror. The light reflecting film 250 is different from the method for manufacturing the light emitting device 1 shown in FIG. 1, but is otherwise the same as the method for manufacturing the light emitting device 1 shown in FIG. Therefore, in FIGS. 17 to 21, the same or corresponding components as those shown in FIGS. 3 to 10 are denoted by the same reference numerals.

  In manufacturing the light emitting device 2, first, the semiconductor light emitting element 20 is bonded onto the substrate 10 to form the interlayer insulating film 31, the individual wiring layer 32, and the interlayer insulating film 33. These steps are the same as those shown in FIGS.

  Next, a negative photosensitive material layer 240 a is formed on the interlayer insulating film 33. The film forming method and thickness of the photosensitive material layer 240a are the same as the film forming method of the photosensitive material layer 40a described with reference to FIG.

  Next, as shown in FIG. 17, an exposure photomask 80 is used to bring the exposure focus to the surface of the substrate 10 and irradiate the photosensitive material layer 240a with exposure light 90. As the design of the exposure area of the photomask 80 for exposure, the area on the bottom surface of the reflection cup on which the light reflection film 250 is formed is shielded from light, or the area slightly larger than the bottom surface of the reflection cup is shielded. design. By this exposure, an exposure region 40a1 which is a shaded region (gray region in the drawing) at both ends of the photosensitive material layer 240a in FIG. 17 and a non-exposure region (non-photosensitive region) 240a2 other than the exposure region 240a1 are formed. Is done. The exposure amount by this exposure is larger as it is closer to the focal position (that is, the surface position of the substrate 10), and is smaller as it is farther from the focal position (that is, the surface position of the photosensitive material layer 240a). In the exposure region 240a1 of the photosensitive material layer 240a in FIG. 17, a region with a large exposure amount is indicated by “dark gray region”, and a region with a small exposure amount is indicated by “light gray region”.

  Next, as shown in FIG. 18, exposure light 91 is irradiated to the photosensitive material layer 240 a by using an exposure photomask 81 to adjust the exposure focus to the surface of the substrate 10. In designing the exposure region of the photomask 81 for exposure, the region serving as the bottom surface of the cup-shaped light reflection film (also referred to as “reflection cup”) formed by the light reflection film 50 is designed to be shielded from light. By this exposure, exposure regions 240a1a which are shaded regions (gray regions in the figure) at both ends of the photosensitive material layer 240a in FIG. 18 are formed. The exposure amount by this exposure is larger as it is closer to the focal position (that is, the surface position of the substrate 10), and is smaller as it is farther from the focal position (that is, the surface position of the photosensitive material layer 240a). In the exposure region 240a1a of the photosensitive material layer 240a in FIG. 18, a region where the exposure amount is large is indicated by “dark gray region”, and a region where the exposure amount is small is indicated by “light gray region”. 17 and 18 is performed twice or more while changing the exposure conditions. By increasing the number of exposure processes performed under such exposure conditions, the shape of the inclined surface 241 of the sidewall structure layer 240 can be made smooth concave (curved in the longitudinal section).

  Next, as shown in FIG. 19, by performing heat treatment, the crosslinking of the exposure regions 240a1 and 240a1a is promoted to form a crosslinked region. The cross-linking of the exposure region by this heat treatment is larger as it is closer to the focal position (ie, the surface position of the substrate 10), and is smaller as it is closer to the position farther from the focal position (ie, the surface position of the photosensitive material layer 40a). In FIG. 19, in the exposure region 240a1 of the photosensitive material layer 240a, a region where the exposure amount is large is indicated by “dark gray region”, and a region where the exposure amount is small is indicated by “light gray region”. By adjusting the exposure conditions (the shape of the photomask, the distance between the photomask and the exposure object, the amount of light for exposure, etc.) or the crosslinking conditions (heating temperature, heating time, etc.), the desired tilt angle 241 and A hole structure 242 can be formed.

  Next, as shown in FIG. 20, by performing development processing, the non-exposed region 240a2 is developed and removed, and the sidewall structure layer 240 is formed from the photosensitive material layer 240a. At this time, a hole structure 242 having a concave mirror-like (curved surface) structure that has a small diameter on the substrate 10 side and a larger diameter as it approaches the opening 43 is formed.

  Next, as shown in FIG. 21, the light reflecting film 250 is made of a metal material having a high reflectance with respect to the emission wavelength, for example, a metal material mainly composed of Al, Au, or Ag so as to cover the inclined surface 241. Form. The light reflecting film 250 can be formed by, for example, a lithography technique, a sputtering method, or a vapor deposition method.

<< 1-5 >> Image Display Device According to First Embodiment FIG. 22 schematically illustrates the structure of an image display device 3 to which any one of the light-emitting devices 1, 2, 5, and 6 described in the present application is applied. FIG. As shown in FIG. 22, the image display device 3 includes an image display module (image display panel) 501 in which a plurality of light emitting devices are regularly arranged, and a driving circuit 502. Since such an image display device uses LEDs as pixels, sufficiently high luminance can be obtained, and the image display device can be used as a display device with high visibility even outdoors. The image display device 3 can also be used as a projection display equipped in a projector or a head-up display. Note that the plurality of light-emitting devices illustrated in FIG. 22 are examples, and the number of rows and columns of the light-emitting devices and the arrangement method are not limited to the illustrated example.

  As the image display module 501, the individual wiring layer 32 electrically connected to each semiconductor light emitting element 20 and the individual wiring layer connection pad 503 or the common wiring connection pad 504 extended from the common wiring layer 13 to the vicinity of the module outer periphery. Connect an external drive circuit. An arbitrary light emitting dot can be caused to emit light by performing selection such as injecting current into each pad or sweeping current.

<< 1-6 >> Image Forming Apparatus According to First Embodiment FIG. 23 shows the structure and exposure of an image forming apparatus 4 to which any one of the light emitting devices 1, 2, 5, 6 according to the first embodiment is applied. It is a figure which shows roughly the structure of the semiconductor light-emitting element array of the part 603. FIG. As shown in FIG. 23, the image forming apparatus 4 is an LED printer, a copier, a facsimile machine, or a multifunction machine that employs an electrophotographic system. In general, the image forming apparatus 4 exposes the photoreceptor 601, the charger 2 that uniformly charges the surface of the photoreceptor 601, and the uniformly charged surface of the photoreceptor 601 based on print image data. The image forming apparatus includes an exposure unit 603 that forms an electrostatic latent image, a developing unit 604 that develops the electrostatic latent image with a developer, and a transfer unit 605 that transfers the developer image on the photoconductor 601 onto a sheet 606. In the exposure unit 603, a plurality of light emitting devices 1, 2, 5, and 6 are arranged in a line. Note that the plurality of light emitting devices illustrated in FIG. 23 are examples, and the number of light emitting devices and the number of lines are not limited to the illustrated example.

<< 1-7 >> Effects of First Embodiment According to the light source device according to the first embodiment, the light emitted from the semiconductor light emitting element 20 has a wide emission angle, but surrounds the outer periphery of the semiconductor light emitting element 20. The light reflecting films 50, 150, 250 on the inclined surfaces 41, 141, 241 of the side wall structure layers 40, 140, 240 formed in this way are efficiently within a desired light distribution angle centered in a desired direction. It can be changed into a light beam and emitted.

  Further, according to the light source device according to the first embodiment, since the light reflecting films 50, 150, and 250 can be electrically separated from the individual wiring layer 32 or the common wiring layer 13, a material is used for the light reflecting film. The material can be freely selected from the materials in consideration of the reflection efficiency.

  In addition, according to the light source device according to the first embodiment, unlike the prior art, after the semiconductor light emitting element 20 is bonded on the flat surface of the substrate 10 including the silicon substrate 11 that is an integrated circuit substrate, the reflection cup is used. The light reflection films 50, 150, and 250 can be formed as described above, so that the positional shift generated in the prior art does not occur, and the reflection cup is formed on the semiconductor light emitting element 20 with the accuracy of lithography. Can do. Thereby, the light distribution control as designed can be easily realized.

  Moreover, according to the manufacturing method of the light source device according to the first embodiment, the slope shape of the inclined surfaces 41, 141, 241 of the side wall structure layers 40, 140, 240 can be controlled by the exposure conditions and the crosslinking conditions. Therefore, the slope shape can be formed in a shape close to a parabolic surface, and the on-axis brightness can be effectively increased.

  In addition, according to the image display device 3 according to the first embodiment, it is possible to form a reflective cup having a significantly improved positional accuracy with respect to the semiconductor light emitting element 20, and more efficient and uniform light emission luminance. Can be realized.

  In addition, according to the image forming apparatus according to another aspect of the present invention, it is possible to form a reflective cup having a significantly improved positional accuracy with respect to the semiconductor light emitting element 20, which is more efficient and more uniform. Can be realized.

<< 2 >> Second Embodiment << 2-1 >> Light-Emitting Device According to Second Embodiment Hereinafter, a light-emitting device 5 according to a second embodiment of the present invention will be described. FIG. 24 is a longitudinal sectional view schematically showing the structure of the light emitting device 5 according to the second embodiment. In FIG. 24, constituent elements that are the same as or correspond to those shown in FIG. 16 (second modification of the first embodiment) are assigned the same reference numerals. The light emitting device 5 shown in FIG. 24 is different from the side wall structure layer 240 shown in FIG. 16 (second modification of the first embodiment) in the structure of the side wall structure layer 340. The light emitting device 5 shown in FIG. 24 is the same as the light emitting device 2 shown in FIG. 16 (second modified example of the first embodiment) except for the side wall structure layer 340. The light emitting device 5 shown in FIG. 24 can also be used as an image display device, an image forming device, and other light sources, and the light emission shown in FIG. 16 (second modification of the first embodiment). Same as device 2.

  The side wall structure layer 340 of the light emitting device 5 according to the second embodiment is formed on the substrate 10 and has a first insulating material layer 3401 having a first through hole 3401a having a larger diameter than the hole structure 342, and at least And a coating material layer (permanent coating film) 3402 applied so as to cover the side wall surface of the first through hole 3401a and to form the inclined surface 341 of the hole structure 342. A side wall surface of the first insulating material layer 3401 facing the first through hole 3401a is a surface substantially perpendicular to the surface of the substrate 10, and the first through hole 3401a can be formed using a photolithography technique. it can. The coating material layer 3402 is formed so as to cover the side wall surface of the first insulating material layer 3401, and similarly to the case of FIG. 16 (second modification of the first embodiment), the concave inclined surface 341 is formed. An insulating material layer to be formed. The light reflecting film 250 is, for example, a metal material film formed so as to cover the inclined surface 341 that is the side surface of the coating material layer 3402.

<< 2-2 >> Method for Manufacturing Light-Emitting Device According to Second Embodiment FIGS. 25 to 28 are longitudinal cross-sectional views schematically showing steps of a method for manufacturing a light-emitting device according to the second embodiment. 4). The manufacturing method of the light emitting device according to the second embodiment is that the side wall structure layer 340 having the inclined surface 341 having a concave shape (the longitudinal sectional shape is curved) is formed in FIG. 16 (the first embodiment of the first embodiment). This is different from the manufacturing method of the light emitting device 2 shown in (Second Modification). In other respects, the manufacturing method of the light-emitting device 5 shown in FIGS. 25 to 28 is the same as the manufacturing method of the light-emitting device 2 shown in FIGS. 17 to 21 (second modification of the first embodiment). is there. Therefore, in FIGS. 25 to 28, the same reference numerals are given to the same or corresponding components as those shown in FIGS. 17 to 21 (second modification of the first embodiment).

  In manufacturing the light emitting device 5 according to the second embodiment, first, the semiconductor light emitting element 20 is bonded to a predetermined position on the substrate 10, and the interlayer insulating film 31, the individual wiring layer 32, and the interlayer insulating film 33 are sequentially formed. To do. These steps are the same as those shown in FIGS. 3 to 5 (first embodiment).

  Next, on the interlayer insulating film 33, as shown in FIG. 25, a first or negative photosensitive organic insulating film whose side wall surface (end surface) shape is substantially perpendicular to the surface of the substrate 10 is formed. An insulating material layer 3401 is formed. Next, as shown in FIG. 26, a coating material layer 3402 is applied so as to cover the side wall surface 3401a of the first insulating material layer 3401, and the coating material layer 3402 is formed by spin coating or slit coating. Then, the inclined surface 341 having a concave smooth structure is formed on the side wall surface of the first insulating material layer 3401 and on the interlayer insulating film 33.

  In the case where a photosensitive material is used for the coating material layer 3402, patterning is performed by selectively performing an exposure process, and at least a portion of the coating material layer 3402 immediately above the semiconductor light emitting element 20 is removed. When a non-photosensitive material is used for the coating material layer 3402, the coating material layer is removed from at least a portion of the coating material layer 3402 immediately above the semiconductor light emitting element 20 by dry etching. By the above process, a structure as shown in FIG. 27 is obtained. Next, the light reflecting film 250 is formed on the concave inclined surface 341 of the coating material layer 3402.

<< 2-3 >> Effects of Second Embodiment According to the light source device 5 and the method for manufacturing the same according to the second embodiment, the formation position accuracy of the reflective cup with respect to the semiconductor light emitting element 20 is dramatically improved. An efficient image display apparatus or image forming apparatus having uniform light emission luminance can be realized.

  Further, the shape (side wall slope shape) of the inclined surface 341 of the coating material layer 3402 can be adjusted by the viscosity of the coating material, and a light distribution design with higher accuracy can be achieved as compared with the conventional technique.

<< 3 >> Third Embodiment << 3-1 >> Light-Emitting Device According to Third Embodiment Hereinafter, a light-emitting device 6 according to a third embodiment of the present invention will be described. FIG. 29 is a longitudinal sectional view schematically showing the structure of the light emitting device 6 according to the third embodiment. In FIG. 29, the same reference numerals are given to the same or corresponding components as those shown in FIG. 24 (second embodiment). The light emitting device 6 shown in FIG. 29 is different from the sidewall structure layer 340 shown in FIG. 24 (second embodiment) in the structure of the sidewall structure layer 440. With respect to points other than the sidewall structure layer 440, the light-emitting device 6 shown in FIG. 29 is the same as the light-emitting device 5 shown in FIG. 24 (second embodiment). The light emitting device 6 shown in FIG. 29 is the same as the light emitting device 5 shown in FIG. 24 (second embodiment) in that it can be used as an image display device, an image forming device, and other light sources. is there.

  The side wall structure layer 440 of the light emitting device 6 according to the third embodiment is formed on the substrate 10 and is formed on the first insulating material layer 4401 having the first through hole 4401a and the first insulating material layer 4401. A second insulating material layer 4402 formed and having a second through hole 4402a larger in diameter than the hole structure 442 and larger in diameter than the first through hole 4401a, and at least the side wall surface of the first through hole 4401a and the first The coating material layer 4403 is applied so as to cover the side wall surface of the two through holes 4402a and to form the inclined surface 441 of the hole structure 442. A side wall surface of the first insulating material layer 4401 facing the first through hole 4401a is a surface substantially perpendicular to the surface of the substrate 10, and the first through hole 4401a can be formed using a photolithography technique. it can. The side wall surface of the second insulating material layer 4402 facing the second through hole 4402a is a surface substantially perpendicular to the surface of the substrate 10, and the second through hole 4402a can be formed using a photolithography technique. it can. The coating material layer 4403 is formed so as to cover the side wall surface of the first insulating material layer 4401 and the side wall surface of the second insulating material layer 4402, and is concave as in the case of FIG. 24 (second embodiment). This is an insulating material layer on which a slanted surface 441 is formed. The light reflecting film 250 is, for example, a metal material film formed so as to cover the inclined surface 441.

<< 3-2 >> Method for Manufacturing Light-Emitting Device According to Third Embodiment FIGS. 30 to 33 are longitudinal cross-sectional views schematically showing steps of a method for manufacturing a light-emitting device according to the third embodiment. 4). In the method for manufacturing the light emitting device 6 according to the third embodiment, the manufacturing process of the sidewall structure layer 440 having the inclined surface 441 having a concave surface (the longitudinal sectional shape is curved) is shown in FIGS. 25 to 28 (second embodiment). The manufacturing method of the light-emitting device 5 shown in FIG. In other respects, the manufacturing method of the light emitting device 6 according to the third embodiment is the same as the manufacturing method of the light emitting device 5 shown in FIGS. 25 to 28 (second embodiment). Therefore, in FIGS. 30 to 33, the same or corresponding components as those shown in FIGS. 1 to 21 (first embodiment) and FIGS. 25 to 28 (second embodiment) are the same. A sign is attached.

  In manufacturing the light emitting device 6 according to the third embodiment, first, the semiconductor light emitting element 20 is bonded to a predetermined position on the substrate 10, and the interlayer insulating film 31, the individual wiring layer 32, and the interlayer insulating film 33 are sequentially formed. To do. These steps are the same as those shown in FIGS. 3 to 5 (first embodiment).

  Next, on the interlayer insulating film 33, as shown in FIG. 30, a first or negative type photosensitive organic insulating film whose side wall surface (end surface) shape is substantially perpendicular to the surface of the substrate 10 is formed. An insulating material layer 4401 is formed. Next, as shown in FIG. 30, a positive or negative photosensitive organic insulating film whose side wall surface (end surface) shape is substantially perpendicular to the surface of the substrate 10 is formed on the first insulating material layer 4401. A second insulating material layer 4402 is formed.

  Next, as illustrated in FIG. 31, a coating material layer 4403 is applied so as to cover the sidewall surface 4401 a of the first insulating material layer 4401 and the sidewall surface 4402 a of the second insulating material layer 4402, and the coating material layer 4402 is applied. Is formed by spin coating or slit coating to form an inclined surface 441 having a concave and smooth structure on the side wall surface of the side wall structure layer 440a and on the substrate 10.

  In the case where a photosensitive material is used for the coating material layer 4403, exposure processing is selectively performed and patterning is performed, and at least a portion of the coating material layer 4403 immediately above the semiconductor light emitting element 20 is removed. When a non-photosensitive material is used for the coating material layer 4403, at least a portion of the coating material layer 4403 immediately above the semiconductor light emitting element 20 is removed by dry etching. With the above process, a structure as shown in FIG. 32 is obtained. Next, the light reflecting film 250 is formed on the concave inclined surface 441 of the coating material layer 4403.

<< 3-2 >> Effect of Third Embodiment According to the light source device 6 and the method for manufacturing the same according to the third embodiment, a concave surface is formed as compared with the second embodiment in which the insulating material layer is one layer. The shape of the inclined surface 441 can be freely set to a desired shape. Thereby, light distribution control with higher accuracy can be performed, and as a result, an image display apparatus or an image forming apparatus with higher luminance can be realized.

  In addition, according to the light source device 6 and the manufacturing method thereof according to the third embodiment, the accuracy of the formation position of the reflective cup with respect to the semiconductor light emitting element 20 is dramatically improved, so that an image with more efficient and uniform light emission luminance can be obtained. A display device or an image forming apparatus can be realized.

  Further, according to the light source device 6 and the manufacturing method thereof according to the third embodiment, the shape (side wall slope shape) of the inclined surface 441 of the coating material layer 4403 can be adjusted by the viscosity of the coating material. Compared with technology, more precise light distribution design becomes possible.

<< 4 >> Fourth Embodiment << 4-1 >> Image Display Device According to Fourth Embodiment FIG. 34 shows a light emitting device included in an image display module 502 of an image display device according to the fourth embodiment of the present invention. It is a figure which shows roughly the structure of 7a, 7b, 7c. In the light emitting devices 7a, 7b, and 7c shown in FIG. 34, the same or corresponding components as those of the light emitting device 1 shown in FIG. 1 (first embodiment) are denoted by the same reference numerals.

  The image display module 502 of the image display device according to the fourth embodiment has the inclined surfaces 541a, 541b, 541c, 541d, 541e, and 541f of the light emitting devices 7a, 7b, and 7c according to the positions on the image display module 502. The shape is different from the image display module 501 of the image display device 4 shown in FIG. 22 (first embodiment). That is, in FIG. 22 (first embodiment), the structure of the light emitting device 1 (or 2 or 5 or 6) constituting each pixel of the image display module 501 is the same in one image display module 501. However, the image display module 502 shown in FIG. 34 has the inclined surfaces 541a, 541b, 541c, 541d, 541e, and 541f of the light emitting devices 7a, 7b, and 7c according to the position (region) on the image display module 502. The shape is different.

  As shown in FIG. 34, the light emitting devices 7a, 7b, and 7c of the image display module 502 can be classified into three types. The light emitting device 7b is a light emitting device in a region near the center of the image display module 502, and has inclined surfaces 541c and 541d that are substantially targeted around the central axis of the light emitting device 7b. The light emitting device 7a is a light emitting device in a region near the edge of the image display module 502. The inclined surface 541a on the edge side of the central axis of the light emitting device 7a is a gently inclined surface and the inclined surface 541b on the opposite side is inclined. The inclined surface is steeper than the surface 541a. The light emitting device 7c is a light emitting device in a region near the edge of the image display module 502. The inclined surface 541e on the edge side with respect to the central axis of the light emitting device 7c is a gentle inclined surface, and the inclined surface 541f on the opposite side is. The inclined surface is steeper than the inclined surface 541e. With such a configuration, the light emitted from the light emitting devices 7a, 7b, and 7c of the image display module 502 can be changed to light whose beam diameter increases as the light travels.

  Note that the types of light emitting devices formed in one image display module 502 are not limited to three types, and may be four or more types. Further, according to the distance from the center position of the image display module 502, the inclination angles of the inclined surfaces 541a and 541f may be gradually made gentle and the inclination angles of the inclined surfaces 541b and 541e may be made gradually steeper.

<< 4-2 >> Method for Manufacturing Light-Emitting Device of Image Display Device According to Fourth Embodiment Light-emitting devices 7a, 7b, and 7c constituting an image of image display module 502 can be simultaneously formed by a common manufacturing process. Common photomasks 80 and 81 can be used in the manufacture of the light emitting devices 7a, 7b, and 7c. Of the photomask 80 used in the first exposure step, the mask portion of the region where the light emitting device 7a is formed, the mask portion of the region where the light emitting device 7b is formed, and the region where the light emitting device 7c is formed. The mask portion has the same shape. Of the photomask 81 used in the second exposure step, the mask portion (FIG. 36) in the region where the light emitting device 7a is formed, the mask portion (FIG. 39) in the region where the light emitting device 7b is formed, and light emission The mask portion in the region where the device 7c is formed has a different shape.

  35 to 37 are longitudinal sectional views schematically showing the steps of the method for manufacturing the light emitting device 7a of FIG. 38 to 40 are longitudinal sectional views schematically showing the steps of the method for manufacturing the light emitting device 7b of FIG. The manufacturing process of the light emitting device 7c is substantially the same as the manufacturing process of the light emitting device 7a.

  In manufacturing the light emitting devices 7a, 7b, and 7c, first, the semiconductor light emitting element 20 is bonded onto the substrate 10 to form the interlayer insulating film 31, the individual wiring layer 32, and the interlayer insulating film 33. These steps are the same as those shown in FIGS. 3 to 5 (first embodiment). Next, a negative photosensitive material layer 540 a is formed on the interlayer insulating film 33. The film forming method and thickness of the photosensitive material layer 540a are the same as the film forming method of the photosensitive material layer 40a described in FIG. 6 (first embodiment).

  Next, as shown in FIGS. 35 and 38, an exposure photomask 80 is used to bring the exposure focus to the surface of the substrate 10, and the photosensitive material layer 540a is irradiated with the exposure light 90. To do. As the design of the exposure area of the photomask 80 for exposure, the area on the bottom surface of the reflection cup on which the light reflection film 250 is formed is shielded from light, or the area slightly larger than the bottom surface of the reflection cup is shielded. design. By this exposure, an exposure region 540a1 which is a shaded region (gray region in the drawing) at both ends of the photosensitive material layer 540a in FIG. 35 and a non-exposure region (non-photosensitive region) 540a2 other than the exposure region 540a1 are formed. Is done. The exposure amount by this exposure is larger as it is closer to the focal position (that is, the surface position of the substrate 10), and is smaller as it is farther from the focal position (that is, the surface position of the photosensitive material layer 540a). In the exposure region 540a1 of the photosensitive material layer 540a in FIG. 35, a region with a large exposure amount is indicated by “dark gray region”, and a region with a small exposure amount is indicated by “light gray region”.

  Next, as shown in FIGS. 36 and 39, an exposure photomask 81 is used to bring the exposure focus to the surface of the substrate 10 and irradiate the photosensitive material layer 540a with the exposure light 91. . In designing the exposure region of the photomask 81 for exposure, the region other than the region that becomes the cup-shaped inclined surface (541b in FIG. 37) formed by the light reflecting film 50 is designed to be shielded from light. By this exposure, an exposure region 540a1a which is a shaded region (gray region in the drawing) on the right side of the photosensitive material layer 540a in FIG. 36 is formed. The exposure amount by this exposure is larger as it is closer to the focal position (that is, the surface position of the substrate 10), and is smaller as it is farther from the focal position (that is, the surface position of the photosensitive material layer 540a). In the exposure region 540a1a of the photosensitive material layer 540a in FIG. 36, a region with a large exposure amount is indicated by “dark gray region”, and a region with a small exposure amount is indicated by “light gray region”. The photomask 81 includes a mask portion (FIG. 36) in a region where the light emitting device 7a is formed, a mask portion (FIG. 39) in a region where the light emitting device 7b is formed, and a mask portion in a region where the light emitting device 7c is formed. Have different shapes.

  By this exposure, the photosensitive material layer 540a in FIG. 36 has a non-exposure area 540a2 whose exposure amount is equal to or less than a predetermined reference amount, and exposure areas (photosensitive areas) 540a1 and 540a1a other than the non-exposure area 540a2 (both ends in FIG. 36). Side shaded areas and dark hatched areas) are formed. Further, the photosensitive material layer 540a in FIG. 39 has a non-exposure area 540a2 whose exposure amount is a predetermined reference amount or less, and exposure areas (photosensitive areas) 540a1 and 540a1a other than the non-exposure area 540a2 (in FIG. A shaded area and a dark hatched area) are formed.

  Next, heat treatment is performed to promote cross-linking of the exposure regions 540a1a and 540a1. By adjusting the exposure conditions (the shape of the photomask, the distance between the photomask and the object to be exposed, the amount of light for exposure, etc.) or the crosslinking conditions (heating temperature, heating time, etc.), the desired inclination angle 541a, 541b and hole structure 542 can be formed.

  Next, as shown in FIGS. 37 and 40, development processing is performed to remove the non-exposed region 540a2 and form the sidewall structure layer 540 from the photosensitive material layer 540a. At this time, a hole structure 542 having a concave mirror-like (curved surface) structure having a small diameter on the substrate 10 side and a larger diameter as it approaches the opening 543 is formed.

  Next, the light reflecting film 250 is made of a metal material having a high reflectance with respect to the emission wavelength, for example, a metal mainly composed of Al, Au, or Ag so as to cover the inclined surfaces 541a, 541b, 541c, 541d, 541e, 541f. Form by material. The light reflecting film 250 can be formed by, for example, a lithography technique, a sputtering method, or a vapor deposition method.

<< 4-3 >> Image Display Device According to Modified Example of Fourth Embodiment FIG. 41 shows a light emitting device 8a included in an image display module 503 of an image display device according to a modified example of the fourth embodiment of the present invention. It is a figure which shows roughly the structure of 8b, 8c. In the light emitting devices 8a, 8b, and 8c shown in FIG. 41, the same or corresponding components as those of the light emitting device 1 shown in FIG. 1 (first embodiment) are denoted by the same reference numerals.

  The image display module 503 of the image display device according to the modification of the fourth embodiment has inclined surfaces 641a, 641b, 641c, 641d, and 641e of the light emitting devices 8a, 8b, and 8c according to the positions on the image display module 503. , 641f are different from the image display module 501 of the image display device 4 shown in FIG. 22 (first embodiment). That is, in FIG. 22 (first embodiment), the light emitting device 1 (or 2 or 5 or 6) constituting each pixel of the image display module 501 has the same structure, but the image shown in FIG. In the display module 503, the shapes of the inclined surfaces 641a, 641b, 641c, 641d, 641e, and 641f of the light emitting devices 8a, 8b, and 8c differ depending on the position (region) on the image display module 503.

  As shown in FIG. 41, the light emitting devices 8a, 8b, and 8c of the image display module 503 can be classified into three types. The light emitting device 8b is a light emitting device in an area near the center of the image display module 503, and has substantially curved curved surfaces 641c and 641d around the central axis of the light emitting device 8b. The light-emitting device 8a is a light-emitting device in a region near the edge of the image display module 503. The curved inclined surface 641a on the edge side of the central axis of the light-emitting device 8a is a steeply inclined surface, and the opposite curved surface. The inclined surface 641b is a gentle inclined surface. The light emitting device 8c is a light emitting device in a region near the edge of the image display module 503. The inclined surface 641e on the edge side of the central axis of the light emitting device 8c is a gently curved inclined surface, and the inclined surface on the opposite side. The surface 541f is a sharp curved inclined surface. With such a configuration, the light emitted from the light emitting devices 8a, 8b, and 8c of the image display module 503 can be collected.

  Note that the types of light emitting devices formed in one image display module 503 are not limited to three types, and may be four or more types. Further, according to the distance from the center position of the image display module 503, the inclination angles of the inclined surfaces 641a and 641f may be gradually decreased, and the inclination angles of the inclined surfaces 641b and 641e may be gradually increased.

<< 4-4 >> Method for Manufacturing Light-Emitting Device of Image Display Device According to Modification of Fourth Embodiment Light-emitting devices 8a, 8b, and 8c constituting an image of image display module 503 can be simultaneously formed by a common manufacturing process. 42 and 43 are longitudinal sectional views schematically showing the steps of the method for manufacturing the light emitting device 8a of FIG. 44 and 45 are longitudinal sectional views schematically showing steps of the method for manufacturing the light emitting device 8b of FIG. The manufacturing process of the light emitting device 8c is substantially the same as the manufacturing process of the light emitting device 8a.

  In manufacturing the light emitting devices 8a, 8b, and 8c, first, the semiconductor light emitting element 20 is bonded on the substrate 10, and the interlayer insulating film 31, the individual wiring layer 32, and the interlayer insulating film 33 are formed. These steps are the same as those shown in FIGS. 3 to 5 (first embodiment).

  Next, as shown in FIGS. 42 and 44, a positive or negative photosensitive organic insulating film whose side wall surface (end surface) shape is substantially perpendicular to the surface of the substrate 10 is formed on the interlayer insulating film 33. A first insulating material layer 6401 is formed. Next, on the first insulating material layer 6401, as shown in FIGS. 42 and 44, a positive or negative photosensitive organic material whose side wall surface (end surface) shape is substantially perpendicular to the surface of the substrate 10 is used. A second insulating material layer 6402 made of an insulating film is formed.

  Next, an application material layer 6403 is applied so as to cover the side wall surface 6401a of the first insulating material layer 6401 and the side wall surface 6402a of the second insulating material layer 6402, and the application material layer 6403 is formed by spin coating or slit coating. Films are formed on the side wall surface of the side wall structure layer 640 and on the substrate 10 to form concave inclined surfaces 641a, 641b, 641c, 641d, 641e, and 641f having smooth structures.

  In the case where a photosensitive material is used for the coating material layer 6403, selective exposure processing is performed to perform patterning, and at least a portion of the coating material layer 6403 immediately above the semiconductor light emitting element 20 is removed. When a non-photosensitive material is used for the coating material layer 6403, at least a portion of the coating material layer 6403 immediately above the semiconductor light emitting element 20 is removed by dry etching. By the above process, smooth concave inclined surfaces 641a, 641b, 641c, 641d, 641e, and 641f as shown in FIGS. 43 and 45 can be formed. Next, the light reflecting film 250 is formed on the concave inclined surfaces 641a, 641b, 641c, 641d, 641e, and 641f of the coating material layer 6403.

<< 4-5 >> Image Display Device According to Modification of Fourth Embodiment FIG. 46 shows an image display in which the light source device according to the fourth embodiment is applied to the image display module 502 or 503 of FIG. 34 or 41. It is a figure which shows the structure of an apparatus roughly. The image display apparatus shown in FIG. 46 includes an image display module 502 or 503 and a concave reflecting mirror (magnifying glass) 95. In the image display module 502 or 503, the inclined surface 541a (or 641a) is formed so as to be largely open on the left side in the left area of the image display unit, and the left and right inclined surfaces 541c and 541d (or in the central area of the image display unit). 641c, 641d) are formed to be the same on the left and right, and in the right area of the image display portion, the inclined surface 541f (or 641f) is formed in a state of being largely open on the right side. Therefore, in the center area of the image display section, the center of the light distribution angle is vertically above, whereas in the left area of the image display section, the center of the light distribution angle is inclined to the left with respect to the vertical method. In the right area of the display unit, the center of the light distribution angle is inclined to the right with respect to the vertical direction. By controlling the light distribution angle in this way, when the display image of the image display module 502 or 503 is enlarged using the concave reflecting mirror 95 as shown in FIG. Is possible. This is because when the display image of the image display module 502 or 503 is projected using the concave reflecting mirror 95, the light beam outside the display area needs to be efficiently reflected outside the concave reflecting mirror 95. This is because it is possible to control the ideal light distribution angle with respect to the concave reflecting mirror 95 in the plane.

<< 4-6 >> Effect of Fourth Embodiment According to the light emitting device and the method for manufacturing the same according to the fourth embodiment, the reflective cup whose formation position accuracy is remarkably improved with respect to the semiconductor light emitting element 20 is formed. Therefore, it is possible to realize an image display apparatus or an image forming apparatus that is more efficient and has uniform light emission luminance.

  Further, according to the light emitting device and the manufacturing method thereof according to the fourth embodiment, the shape of the inclined surface can be easily adjusted, and more detailed light distribution design is possible compared to the conventional technology. Become. In addition, the light distribution angle can be controlled for each region in the display surface, and the center of the light distribution angle can be controlled to the angle with the highest use efficiency.

  1, 1a, 2, 5, 6, 7a, 7b, 7c, 8a, 8b, 8c Light emitting device, 3 image display device, 4 image forming device, 9 image display device, 10 substrate, 11 silicon substrate, 12 interlayer insulating film (First interlayer insulating film), 13 common wiring layer, 20 semiconductor light emitting device (LED), 21 lower contact layer, 22 lower cladding layer, 23 active layer, 24 upper cladding layer, 25 upper contact layer, 31 interlayer Insulating film (second interlayer insulating film), 32 individual wiring layers, 33 interlayer insulating film (third interlayer insulating film), 40, 140, 240, 340, 440, 540, 640 sidewall structure layers, 41, 141 241, 241, 441, 541, 541a, 541b, 541c, 541d, 541e, 541f, 641a, 641b, 641c, 641d, 41e, 641f inclined surface, 42, 142, 242, 342, 442, 542 hole structure, 43, 243, 543, 643 opening, 50, 150, 250 light reflecting film, 60 semiconductor light emitting element forming substrate (growth substrate), 61 peeling layer, 70 carrier substrate, 95 concave reflection boundary (magnifying glass), 501, 502, 503 image display module.

Claims (24)

A substrate,
At least one semiconductor light emitting device provided on the substrate;
A hole structure comprising an inclined surface formed so as to surround the side surface of the semiconductor light emitting element at a position away from the semiconductor light emitting element on the substrate, and having a small diameter on the substrate side and a large diameter on the opening side. A sidewall structure layer having the hole structure formed to be thicker than the semiconductor light emitting element;
A light reflecting film provided on the inclined surface and configured to emit light emitted from the semiconductor light emitting element toward the outside of the hole structure.   The light emitting device according to claim 1, wherein the hole structure has a truncated cone shape that has a smaller diameter as it is closer to the substrate and has a larger diameter as it is closer to the opening.   2. The light emitting device according to claim 1, wherein the inclined surface of the hole structure has a concave mirror shape having a smaller diameter as it is closer to the substrate and a larger diameter as it is closer to the opening.   4. The light emitting device according to claim 1, wherein the side wall structure layer is an insulating material layer formed on the substrate. 5. The sidewall structure layer includes
A first insulating material layer formed on the substrate and having a first through hole having a larger diameter than the hole structure;
A coating material layer applied so as to cover at least a side wall surface of the first through hole and to form the inclined surface of the hole structure. The light-emitting device of any one of Claims. The sidewall structure layer includes
A first insulating material layer formed on the substrate and having a first through hole having a larger diameter than the hole structure;
A second insulating material layer formed on the first insulating material layer and having a second through hole larger in diameter than the hole structure and larger in diameter than the first through hole;
And a coating material layer applied so as to cover at least the side wall surface of the first through hole and the side wall surface of the second through hole and to form the inclined surface of the hole structure. The light-emitting device according to claim 1, wherein the light-emitting device is a light-emitting device.   The inclination angle of the inclined surface on one side of the hole structure and the inclination angle of the inclined surface on the other side opposite to the one side are different from each other. 2. The light emitting device according to item 1.   8. The thin film semiconductor element according to claim 1, wherein the semiconductor light emitting element is a thin film semiconductor element grown on a semiconductor light emitting element forming substrate different from the substrate, peeled off, and bonded onto the substrate. The light emitting device according to claim 1.   9. The light-emitting device according to claim 1, wherein a film thickness of the semiconductor light-emitting element is 5 [μm] or less.   The light emitting device according to claim 9, wherein a thickness of the side wall structure layer is 10 [μm] or more.   The light-emitting device according to claim 1, wherein the light reflecting film is formed of a metal material. The substrate includes a semiconductor integrated circuit substrate, an interlayer insulating film, and a common wiring layer,
The light emitting device according to any one of claims 1 to 11, wherein the semiconductor light emitting element is provided on the common wiring layer so as to be electrically connected to the common wiring layer. A substrate,
A plurality of semiconductor light emitting devices regularly arranged on the substrate;
A plurality of hole structures comprising a plurality of inclined surfaces formed on the substrate so as to surround a side surface of the semiconductor light emitting element at a position distant from the semiconductor light emitting element, and having a small diameter on the substrate side and having an opening side A side wall structure layer having a plurality of hole structures formed to have a large diameter at a thickness greater than that of the semiconductor light emitting element;
An image display device comprising: a plurality of light reflecting films provided on the plurality of inclined surfaces and configured to emit light emitted from the semiconductor light emitting element toward the outside of the hole structure.   The image display device according to claim 13, wherein the plurality of semiconductor light emitting elements are arranged in a plurality of rows and a plurality of columns on the substrate.   The inclination angle of the inclined surface of the hole structure on the side close to the center position of the substrate is made larger than the inclination angle of the inclined surface of the hole structure on the side close to the edge of the substrate. The image display device according to claim 14. An image forming apparatus having an exposure device for exposing a photoreceptor,
The exposure apparatus includes:
A substrate,
A plurality of semiconductor light emitting devices regularly arranged on the substrate;
A plurality of hole structures comprising a plurality of inclined surfaces formed on the substrate so as to surround a side surface of the semiconductor light emitting element at a position distant from the semiconductor light emitting element, and having a small diameter on the substrate side and having an opening side A side wall structure layer having a plurality of hole structures formed to have a large diameter at a thickness greater than that of the semiconductor light emitting element;
An image forming apparatus, comprising: a plurality of light reflecting films provided on the plurality of inclined surfaces and configured to emit light emitted from the semiconductor light emitting element toward the outside of the hole structure.   The image forming apparatus according to claim 16, wherein the plurality of semiconductor light emitting elements are arranged in a line on the substrate. Adhering a semiconductor light emitting element on a substrate;
Forming a sidewall structure layer thicker than the semiconductor light emitting element on the substrate so as to cover the semiconductor light emitting element;
The sidewall structure layer has a hole structure including an inclined surface formed so as to surround a side surface of the semiconductor light emitting element at a position away from the semiconductor light emitting element, and has a small diameter on the substrate side and a large diameter on the opening side. Forming the hole structure to be
Forming a light reflecting film for emitting light emitted from the semiconductor light emitting element toward the outside of the hole structure on the inclined surface. The step of forming the hole structure includes:
Forming a photosensitive insulating material layer constituting the sidewall structure layer;
An exposure step of exposing a predetermined region of the photosensitive insulating material layer;
A heating step of heating and crosslinking the photosensitive material layer after the exposure step;
The method for manufacturing a light emitting device according to claim 18, further comprising: developing the photosensitive material layer to form the hole structure after the heating step.   The method of manufacturing a light emitting device according to claim 19, wherein the exposing step is performed a plurality of times while changing a distance from the photosensitive insulating material layer to the mask. The step of forming the sidewall structure layer includes
Forming a first insulating material layer having a first through hole larger in diameter than the hole structure on the substrate;
The step of applying a coating material layer so as to cover at least the side wall surface of the first through-hole to form the inclined surface of the hole structure, Production method. The step of forming the sidewall structure layer includes
Forming a first insulating material layer having a first through hole larger in diameter than the hole structure on the substrate;
Forming a second insulating material layer on the first insulating material layer having a second through hole having a diameter larger than that of the hole structure and larger than that of the first through hole;
Applying the coating material layer so as to cover at least the side wall surface of the first through hole and the side wall surface of the second through hole, and forming the inclined surface of the hole structure. The manufacturing method of the light-emitting device of Claim 18.   In the step of forming the hole structure, the hole structure is configured such that an inclination angle of the inclined surface on one side of the hole structure is different from an inclination angle of the inclined surface on the other side opposite to the one side. The method for manufacturing a light emitting device according to claim 18, wherein the light emitting device is formed.   24. The thin film semiconductor element according to claim 18, wherein the semiconductor light emitting element is a thin film semiconductor element grown on a semiconductor light emitting element forming substrate different from the substrate, peeled off, and bonded onto the substrate. A method for manufacturing the light emitting device according to claim 1.

Images