JP2017059638A - Semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that can be enhanced in light extraction efficiency.SOLUTION: A semiconductor light emitting element includes a substrate 80, a first semiconductor layer 11, a second semiconductor layer 12, a third semiconductor layer 13, a fourth semiconductor layer 24, a fifth semiconductor layer 25, a sixth semiconductor layer 26, a first conductive layer 61, a second conductive layer 62, and a third conductive layer 63. The first semiconductor layer includes a first region 11a and a second region 11b, is separated from the substrate in a first direction and has a first conductivity type. The second semiconductor layer is provided between the second region and the substrate, and has a second conductivity type. The third semiconductor layer is provided between the second region and the second semiconductor layer. The fourth semiconductor layer includes a third region 24c and a fourth region 24d, is spaced apart from the substrate in the first direction and aligned with the first semiconductor layer in a direction intersecting to the first direction, and has a first conductivity type. The fifth semiconductor layer is provided between the fourth region and the substrate, and has a second conductivity type. The sixth semiconductor layer is provided between the fourth region and the fifth semiconductor layer.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a semiconductor light emitting device.

  In a semiconductor light emitting device, improvement in light extraction efficiency is desired.

Special table 2010-875515 gazette

  Embodiments of the present invention provide a semiconductor light emitting device capable of improving light extraction efficiency.

  According to the embodiment, the semiconductor light emitting device includes a base, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer, a sixth semiconductor layer, A first conductive layer, a second conductive layer, and a third conductive layer are included. The first semiconductor layer includes a first region and a second region. The first semiconductor layer is of a first conductivity type. The first semiconductor layer is separated from the base body in a first direction. The second region is aligned with the first region in a direction intersecting the first direction. The second semiconductor layer is provided between the second region and the base body. The second semiconductor layer is of a second conductivity type. The third semiconductor layer is provided between the second region and the second semiconductor layer. The fourth semiconductor layer includes a third region and a fourth region. The fourth semiconductor layer is separated from the base body in the first direction. The fourth semiconductor layer is aligned with the first semiconductor layer in a direction intersecting the first direction. The fourth semiconductor layer is the first conductivity type. The fourth region is disposed between the second region and the third region. The first region is disposed between the second region and the fourth region. The fifth semiconductor layer is provided between the fourth region and the base body. The fifth semiconductor layer is the second conductivity type. The sixth semiconductor layer is provided between the fourth region and the fifth semiconductor layer. The first conductive layer includes a first portion and a second portion. The first portion is provided between the first region and the base body. The first conductive layer is electrically connected to the first region. The second conductive layer includes a third portion and a fourth portion. The third conductive layer includes a fifth portion and a sixth portion. The second part is disposed between the fifth part and the base body. The second part is electrically connected to the fifth part. The third portion is provided between the fifth semiconductor layer and the base body. The third portion is electrically connected to the fifth semiconductor layer. The fourth portion is disposed between the sixth portion and the base body. The fourth portion is electrically connected to the sixth portion. The third conductive layer is between the first semiconductor layer and the fourth semiconductor layer, between the second semiconductor layer and the fifth semiconductor layer, and between the third semiconductor layer and the sixth semiconductor layer. Between at least one.

FIG. 1A and FIG. 1B are schematic views illustrating the semiconductor light emitting element according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating the semiconductor light emitting element according to the first embodiment. FIG. 3A to FIG. 3C are schematic cross-sectional views illustrating the method for manufacturing the semiconductor light emitting element according to the first embodiment. FIG. 4A and FIG. 4B are schematic cross-sectional views illustrating the method for manufacturing the semiconductor light emitting element according to the first embodiment. FIG. 5A and FIG. 5B are schematic plan views illustrating the pattern of the semiconductor light emitting device according to the first embodiment. FIG. 6A and FIG. 6B are schematic plan views illustrating patterns of the semiconductor light emitting device according to the first embodiment. FIG. 7A and FIG. 7B are schematic plan views illustrating the pattern of the semiconductor light emitting element according to the first embodiment. FIG. 8A and FIG. 8B are schematic plan views illustrating the pattern of the semiconductor light emitting device according to the first embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A and FIG. 1B are schematic views illustrating the semiconductor light emitting element according to the first embodiment. FIG. 1A is a plan view. FIG. 1B is a cross-sectional view taken along line B1-B2 of FIG.

  As shown in FIGS. 1A and 1B, the semiconductor light emitting device 100 includes a base body 80, first to third semiconductor layers 11 to 13, fourth to sixth semiconductor layers 24 to 26, First to third conductive layers 61 to 63.

  The first semiconductor layer 11 is separated from the base body 80 in the first direction. The eleventh semiconductor layer 11 is the first conductivity type. The first semiconductor layer 11 includes a first region 11a and a second region 11b. The second region 11b is aligned with the first region 11a in a direction intersecting the first direction.

  The first direction is the Z direction. One direction perpendicular to the Z direction is defined as the X direction. A direction perpendicular to the Z direction and the X direction is taken as a Y direction.

  The second semiconductor layer 12 is provided between the second region 11 b and the base body 80. The second semiconductor layer 12 is of the second conductivity type. The third semiconductor layer 13 is provided between the second region 11 b and the second semiconductor layer 12.

  For example, the first conductivity type is n-type and the second conductivity type is p-type. In the embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

  The fourth semiconductor layer 24 is provided apart from the base body 80 in the Z direction. The fourth semiconductor layer 24 is aligned with the first semiconductor layer 11 in a direction intersecting the Z direction. The fourth semiconductor layer 24 is of the first conductivity type. The fourth semiconductor layer 24 includes a third region 24c and a fourth region 24d. The fourth region 24d is disposed between the second region 11b and the third region 24c. The first region 11a is disposed between the second region 11b and the fourth region 24d.

  The fifth semiconductor layer 25 is provided between the fourth region 24 d and the base body 80. The fifth semiconductor layer 25 is of the second conductivity type. The sixth semiconductor layer 26 is provided between the fourth region 24 d and the fifth semiconductor layer 25. The fourth semiconductor layer 24 further includes a sixth region 24f. At least a part of the third region 24c is disposed between the sixth region 24f and the fourth region 24d. The fifth semiconductor layer 25 further includes a portion 25ep extending between the sixth region 24f and the base body 80. The sixth semiconductor layer 26 further includes a portion 26ep extending between the sixth region 24f and the portion 25ep.

  The first conductive layer 61 includes a first portion 61a and a second portion 61b. The first portion 61 a is provided between the first region 11 a and the base body 80. The first portion 61a is electrically connected to the first region 11a. The second conductive layer 62 includes a third portion 62c and a fourth portion 62d. The third portion 62 c is provided between the fifth semiconductor layer 25 and the base body 80. The third portion 62c is electrically connected to the fifth semiconductor layer 25. The third conductive layer 63 includes a fifth portion 63e, a sixth portion 63f, and a seventh portion 63g. The seventh portion 63g is provided between the fifth portion 63e and the sixth portion 63f.

The second portion 61b is disposed between the fifth portion 63e and the base body 80. The second portion 61b is electrically connected to the fifth portion 63e. The fourth portion 62d is disposed between the sixth portion 63f and the base body 80. The fourth portion 62d is electrically connected to the sixth portion 63f.
The third conductive layer 63 is between the first semiconductor layer 11 and the fourth semiconductor layer 24, between the second semiconductor layer 12 and the fifth semiconductor layer 25, and between the third semiconductor layer 13 and the sixth semiconductor layer 26. Between at least one. In this example, the third conductive layer 63 is provided between the first semiconductor layer 11 and the fourth semiconductor layer 24.

The first semiconductor layer 11 includes a first semiconductor layer first surface 11f1 and a first semiconductor layer second surface 11f2. The first semiconductor layer second surface 11f2 includes a surface facing the first portion 61a and a surface facing the third semiconductor layer 13. The first semiconductor layer first surface 11f1 is separated from the first semiconductor layer second surface 11f2 in the Z direction. The first semiconductor layer first surface 11f1 is a surface opposite to the first semiconductor layer second surface 11f2. The first semiconductor layer first surface 11f1 is, for example, the upper surface of the first semiconductor layer 11. The first semiconductor layer second surface 11f2 is, for example, the lower surface of the first semiconductor layer 11.
The third conductive layer 63 has a third conductive layer first surface 63fa1 and a third conductive layer second surface 63fa2. The third conductive layer second surface 63fa2 includes a surface facing the second portion 61b. The third conductive layer first surface 63fa1 is separated from the third conductive layer second surface 63fa2 in the Z direction.
The first distance L1 (shortest distance) along the Z direction between the first semiconductor layer first surface 11f1 and the base body 80 is along the Z direction between the third conductive layer first surface 63fa1 and the base body 80. It is longer than the third distance L3.

  The semiconductor light emitting device 100 further includes a second insulating layer 72. The first semiconductor layer 11 is disposed between the second insulating layer 72 and the base body 80. The first semiconductor layer 11 has a first semiconductor layer first surface 11 f 1 facing the second insulating layer 72. The third conductive layer 63 is disposed between the second insulating layer 72 and the base body 80. The third conductive layer 63 has a third conductive layer first surface 63fa1 facing the second insulating layer 72. The first distance L1 along the Z direction between the first semiconductor layer first surface 11f1 and the base body 80 is greater than the third distance L3 along the Z direction between the third conductive layer first surface 63fa1 and the base body 80. long.

The distance L5 along the Z direction between the third conductive layer 63 and the base body 80 is longer than the distance along the Z direction between the first semiconductor layer 11 and the base body 80. The distance L5 is longer than the second distance L7 along the Z direction between the second conductive layer 62 and the base body 80.
The thickness D6 along the Z direction of the sixth portion 63f is thicker than the thickness D3 along the Z direction of the third portion 62c.
At least a part of the third conductive layer 63 overlaps the first semiconductor layer 11 in a direction crossing the Z direction.

The first semiconductor layer 11 and the fourth semiconductor layer 24 include, for example, an n-type nitride semiconductor. These semiconductor layers include, for example, n-type GaN.
The second semiconductor layer 12 and the fifth semiconductor layer 25 include, for example, a p-type nitride semiconductor. These semiconductor layers contain, for example, p-type GaN.
The third semiconductor layer 13 and the sixth semiconductor layer 26 include, for example, a nitride semiconductor. These semiconductor layers include, for example, well layers. The well layer includes, for example, InGaN. These semiconductor layers include, for example, a barrier layer. A well layer is disposed between the two barrier layers. The number of well layers may be 1 or 2 or more.

For example, the first to third semiconductor layers 11 to 13 become a part of the first light emitting portion E1 (for example, LED). The fourth to sixth semiconductor layers 24 to 26 become a part of the second light emitting portion E2 (for example, LED). The fourth semiconductor layer 24, the portion 25ep, and the portion 26ep become another part of the second light emitting portion E2. These light emitting portions are connected by the first to third conductive layers 61 to 63.
The semiconductor light emitting device 100 is, for example, a multi junction LED. The semiconductor light emitting device 100 includes a plurality of light emitting portions (for example, a first light emitting portion E1 and a second light emitting portion E2).

The semiconductor light emitting device 100 further includes a second semiconductor layer electrode 52. The second semiconductor layer electrode 52 is provided between the second semiconductor layer 12 and the base body 80. The second semiconductor layer electrode 52 is electrically connected to the second semiconductor layer 12.
The second semiconductor layer 12 has a second semiconductor layer second surface 12 f 2 facing the second semiconductor layer electrode 52. A distance L5 along the Z direction between the third conductive layer 63 and the base body 80 is longer than a distance L6 along the Z direction between the second semiconductor layer second surface 12f2 and the base body 80.
The semiconductor light emitting device 100 further includes a fourth semiconductor layer electrode 54. The fourth semiconductor layer electrode 54 is provided between the third region 24 c of the fourth semiconductor layer 24 and the base body 80. The fourth semiconductor layer electrode 54 is electrically connected to the third region 24c.
The semiconductor light emitting device 100 further includes a first pad 91. The first pad 91 is electrically connected to the fourth semiconductor layer electrode 54. At least a part of the first pad 91 overlaps the fourth semiconductor layer 24 in a direction crossing the Z direction.
The semiconductor light emitting device 100 further includes a second pad 92. The second pad 92 is electrically connected to the second semiconductor layer electrode 52. At least a part of the second pad 92 overlaps the first semiconductor layer 11 in a direction crossing the Z direction.

  The unevenness 90 is provided on the first surface 11f1 of the first semiconductor layer.

For example, a voltage is applied between the second semiconductor layer electrode 52 and the fourth semiconductor layer electrode 54. The second semiconductor layer 12, the third semiconductor layer 13, the first semiconductor layer 11, the first conductive layer 61, the third conductive layer 63, the second conductive layer 62, the fifth semiconductor layer 25, the sixth semiconductor layer 26, and Current flows between the second semiconductor layer electrode 52 and the fourth semiconductor layer electrode 54 via the fourth semiconductor layer 24 (and further via the portion 25ep of the fifth semiconductor layer 25 and the portion 26ep of the sixth semiconductor layer 26). Flows. For example, light is emitted from the third semiconductor layer 13 and the sixth semiconductor layer 26 by this current.
In this example, a voltage is applied by the first pad 91 and the second pad 92. By applying a voltage between the first pad 91 and the second pad 92, a voltage is applied between the fourth semiconductor layer electrode 54 and the second semiconductor layer electrode 52, and light emission occurs.

  The first semiconductor layer 11 further includes a first semiconductor layer third surface 11f3. The first semiconductor layer third surface 11f3 intersects the first semiconductor layer first surface 11f1, and intersects the first semiconductor layer second surface 11f2. The first semiconductor layer third surface 11f3 is, for example, a side surface of the first semiconductor layer 11.

  In the semiconductor light emitting device 100 according to the embodiment, the third conductive layer 63 is disposed between the first semiconductor layer 11 and the fourth semiconductor layer 24. For example, the third conductive layer 63 is not disposed on the first semiconductor layer first surface 11 f 1 of the first semiconductor layer 11. For example, the third conductive layer 63 is not disposed on the third surface 11f3 of the first semiconductor layer. The light op1 emitted from the third semiconductor layer 13 and emitted outside from the first semiconductor layer first surface 11f1 is not easily shielded. In the embodiment, the intensity of the light op1 is higher than, for example, the case where the third conductive layer 63 is disposed on one of the first semiconductor layer first surface 11f1 and the first semiconductor layer third surface 11f3. As a result, it is possible to provide a semiconductor light emitting device capable of improving light extraction efficiency.

  In the semiconductor light emitting device 100 according to the embodiment, the third conductive layer 63 is provided between the first semiconductor layer 11 and the fourth semiconductor layer 24. For example, a wiring layer (conductive layer) different from the third conductive layer 63 is not provided between the first semiconductor layer 11 and the fourth semiconductor layer 24, for example. Thereby, for example, the thickness of the third conductive layer 63 can be increased. For example, the thickness D6 in the Z direction of the sixth portion of the third conductive layer 63 is thicker than the thickness D3 in the Z direction of the third portion 62c of the second conductive layer 62. As a result, the resistance of the third conductive layer 63 is low.

  In the semiconductor light emitting device 100 according to the embodiment, the first insulating layer 71 includes the second semiconductor layer electrode 52 and the base body 80, the first conductive layer 61 and the base body 80, and the second conductive layer 62 and the base body. 80, between the third conductive layer 63 and the base body 80, and between the third region 24 c and the base body 80. For example, the first metal layer 41 is provided between the first insulating layer 71 and the base body 80. The second metal layer 42 may be provided between the first insulating layer 71 and the first metal layer 41. The second metal layer 42 reflects the light emitted from the third semiconductor layer 13. The reflected light exits from the first surface 11f1 of the first semiconductor layer 11. Thereby, the light extraction efficiency can be further improved.

The first semiconductor layer 11 further includes a fifth region 11e. The second region 11b is disposed between the first region 11a and the fifth region 11e.
The semiconductor light emitting device 100 according to the embodiment further includes a first semiconductor layer electrode 51. The first semiconductor layer electrode 51 is provided between the fifth region 11 e of the first semiconductor layer 11 and the base body 80. The first semiconductor layer electrode 51 is electrically connected to the fifth region 11e.
The semiconductor light emitting device 100 according to the embodiment further includes a fifth semiconductor layer electrode 55. The fifth semiconductor layer electrode 55 is provided between the portion 25ep of the fifth semiconductor layer 25 and the base body 80. The fifth semiconductor layer electrode 55 is electrically connected to the portion 25ep.

One of the first semiconductor layer electrode 51 and the fourth semiconductor layer electrode 54 includes, for example, aluminum. One of the first semiconductor layer electrode 51 and the fourth semiconductor layer electrode 54 includes, for example, an alloy containing aluminum. One of the first semiconductor layer electrode 51 and the fourth semiconductor layer electrode 54 reflects, for example, light emitted from the third semiconductor layer 13.
One of the second semiconductor layer electrode 52 and the fifth semiconductor layer electrode 55 includes, for example, silver. One of the second semiconductor layer electrode 52 and the fifth semiconductor layer electrode 55 includes, for example, an alloy containing silver. One of the second semiconductor layer electrode 52 and the fifth semiconductor layer electrode 55 reflects the light emitted from the third semiconductor layer 13.

Either the first semiconductor layer 11 or the fourth semiconductor layer 24 includes gallium nitride. The first insulating layer 71 includes, for example, one of silicon oxide and silicon nitride. The first metal layer 41 includes, for example, either gold or tin.
The second semiconductor layer electrode 52 includes, for example, the material included in the second conductive layer 62.
The fourth semiconductor layer electrode 54 includes, for example, the material included in the first conductive layer 61.
The first semiconductor layer electrode 51 includes, for example, the material included in the first conductive layer 61.
The fifth semiconductor layer electrode 55 includes, for example, the material included in the second conductive layer 62.

The base 80 has a base first surface 80f1 and a base second surface 80f2. The first base surface 80 f 1 faces the first insulating layer 71. The second base surface 80f2 is separated from the first insulating layer 71 in the Z direction and intersects the Z direction. The base first surface 80f1 is, for example, a surface opposite to the base second surface 80f2.
The intensity of the light op1 emitted from the third semiconductor layer 13 and emitted outward from the first semiconductor layer first surface 11f1 is the intensity of the light op2 emitted from the third semiconductor layer 13 and emitted outward from the substrate second surface 80f2. Higher than.

  The emitted light is emitted to the outside mainly from the upper surface of the first semiconductor layer 11 and the upper surface of the fourth semiconductor layer 24. These surfaces serve as a light emitting surface (light emitting surface) of the semiconductor light emitting device 100.

  The peak wavelength of light is, for example, not less than 380 nm and not more than 650 nm. The light intensity is highest at the peak wavelength.

  FIG. 2 is a schematic cross-sectional view illustrating the semiconductor light emitting element according to the first embodiment.

As shown in FIG. 2, the semiconductor light emitting device 100 further includes a resin layer 76. The resin layer 76 includes a resin 76a and a phosphor 77. The phosphor 77 is surrounded by the resin 76a. The phosphor 77 is disposed between the resin 76 a and the first semiconductor layer 11. The phosphor 77 is not disposed between the resin 76 a and the third conductive layer 63.
A first wire 91 </ b> P is connected to the first pad 91. A second wire 92 </ b> P is connected to the second pad 92.

FIG. 3A to FIG. 3C are schematic cross-sectional views illustrating the method for manufacturing the semiconductor light emitting element according to the first embodiment.
FIG. 4A and FIG. 4B are schematic cross-sectional views illustrating the method for manufacturing the semiconductor light emitting element according to the first embodiment.

  As shown in FIG. 3A, the first base semiconductor layer 11ba is formed on the growth substrate 95 by epitaxial growth, for example, by MOCVD (Metal Organic Chemical Vapor Deposition). The first base semiconductor layer 11ba is also referred to as a crystal layer. Etching is performed on the first base semiconductor layer 11ba. Thereby, the semiconductor layer 11baa after the first base processing is formed. The first base-processed semiconductor layer 11baa has an opening 81, an opening 82, and an opening 83. After the first base processing, an insulating member is deposited on the semiconductor layer 11baa to form the insulating layer 75. The insulating layer 75 has an opening 81a, an opening 82a, and an opening 83a reflecting the opening 81, the opening 82, and the opening 83.

As shown in FIG. 3B, the insulating layer 75 is etched. Thereby, a part of the bottom surface 81ab of the opening 81a and a part of the bottom surface 82ab of the opening 82a are removed.
By removing a portion of the bottom surface 81ab, a portion of the semiconductor layer 11baa after the first base processing is exposed. A first pad electrode 31 is formed by depositing a conductive material on a part of the semiconductor layer 11baa after the first base processing and the bottom surface 81ab.
By removing one portion of the bottom surface 82ab, another portion of the semiconductor layer 11baa after the first base processing is exposed. A first conductive layer 61 is formed by depositing a conductive material on another part of the semiconductor layer 11baa after the first base processing and the bottom surface 82ab.

As shown in FIG. 3C, a portion of the insulating layer 75 is removed to form openings 84-86.
The third base semiconductor layer 13ba is formed in the openings 84 to 86. A second base semiconductor layer 12ba is formed on the third base semiconductor layer 13ba. A conductive member is deposited on part of the second base semiconductor layer 12ba and the insulating layer 75 to form the second base semiconductor layer electrode 52ba.

As shown in FIG. 4A, openings 87 and 88 are formed through the second base semiconductor layer electrode 52ba, the second base semiconductor layer 12ba, and the third base semiconductor layer 13ba in the Z direction. The openings 87 and 88 reach the semiconductor layer 11baa after the first base processing. A conductive member is deposited on the bottom surface of the opening 87 to form the first semiconductor layer electrode 51. A conductive member is deposited on the bottom surface of the opening 88 to form the fourth semiconductor layer electrode 54.
An insulating material is deposited on the second base semiconductor layer electrode 52ba, a part of the insulating layer 75, the first pad electrode 31, the fourth semiconductor layer electrode 54, the first conductive layer 61, and the first semiconductor layer electrode 51. One insulating layer 71 is formed.

  As shown in FIG. 4B, the first bonding metal layer 41 b is formed on the base body 80. A first bonding metal layer 41 a is formed on the first insulating layer 71. The first bonding metal layer 41a and the first bonding metal layer 41b are bonded. The first metal layer 41 includes a first bonding metal layer 41a and a first bonding metal layer 41b. The growth substrate 95 is removed by grinding or etching.

  As shown in FIG. 1B, the first surface 11f1 of the first semiconductor layer is processed, for example, by etching. Thereby, the unevenness 90 is formed on the first surface 11f1. After the first base processing, the semiconductor layer 11baa is etched. By this etching, the first semiconductor layer 11 and the fourth semiconductor layer 24 are formed. The second insulating layer 72 is formed on the first surface 11f1 of the first semiconductor layer. Insulating layers 71 and 72 are etched. By this etching, a part of the second base semiconductor layer electrode 52ba is exposed. A portion of the exposed second base semiconductor layer electrode 52ba becomes the second pad electrode 32. A second pad 92 is formed on the second pad electrode 32. The second pad 92 and the second pad electrode 32 are electrically connected. By this etching, the first pad electrode 31 is exposed. A first pad 91 is formed on the first pad electrode 31. The first pad 91 and the fourth semiconductor layer electrode 54 are electrically connected through the first pad electrode 31.

  The second base semiconductor layer 12ba after the etching becomes the second semiconductor layer 12. The third base semiconductor layer 13ba after the etching becomes the third semiconductor layer 13. By etching, a part of the first conductive layer 61 (second part 61b) and a part of the second conductive layer 62 (fourth part 62d) are exposed. A third conductive layer 63 is formed on the second portion 61b and the fourth portion 62d.

  In this way, the semiconductor light emitting device 100 is formed.

  According to the embodiment, it is possible to provide a semiconductor light emitting device capable of improving light extraction efficiency.

Examples of the pattern of each layer of the semiconductor light emitting device according to the first embodiment will be described below.
FIG. 5A and FIG. 5B are schematic plan views illustrating the pattern of the semiconductor light emitting device according to the first embodiment.
A pattern P2 shown in FIG. 5A is a pattern of the second conductivity type electrode layer. The pattern P2 includes, for example, patterns of the second semiconductor layer electrode 52 and the fifth semiconductor layer electrode 55.
A pattern P2c shown in FIG. 5B is a pattern of the second conductivity type electrode cover layer. The pattern P2c includes, for example, the pattern of the cover layer of the second semiconductor layer electrode 52 and the fifth semiconductor layer electrode 55.
FIG. 6A and FIG. 6B are schematic plan views illustrating patterns of the semiconductor light emitting device according to the first embodiment.
A pattern P1 shown in FIG. 6A is a pattern of the first conductivity type electrode layer. The pattern P1 includes, for example, patterns of the first semiconductor layer electrode 51 and the fourth semiconductor layer electrode 54.
A pattern P1c shown in FIG. 6B is a wiring pattern for electrically connecting the first conductivity type electrodes.
FIG. 7A and FIG. 7B are schematic plan views illustrating the pattern of the semiconductor light emitting element according to the first embodiment.
A pattern Pm shown in FIG. 7A is a pattern for forming an opening. The opening includes, for example, an opening 81, an opening 82, and an opening 83.
A pattern Pi shown in FIG. 7B is a pattern for separating the crystal layer to form a semiconductor layer. The semiconductor layer includes, for example, the first semiconductor layer 11 and the second semiconductor layer 24.
FIG. 8A and FIG. 8B are schematic plan views illustrating the pattern of the semiconductor light emitting device according to the first embodiment.
A pattern Pw shown in FIG. 8A is a pattern for forming a pad by wet etching. The pads include, for example, a first pad 91 and a second pad 92.
A pattern Pv shown in FIG. 8B is a pattern for forming a pad by vapor deposition.
These patterns are stacked in the Z direction.

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added for controlling various physical properties such as conductivity type, and unintentionally Those further including various elements included are also included in the “nitride semiconductor”.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. It ’s fine.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element such as a substrate, a semiconductor layer, a conductive layer, a pad layer, a metal layer, a metal film, an electrode, and a connection part included in the semiconductor light emitting element is appropriately selected by those skilled in the art from a known range. By doing so, the present invention is included in the scope of the present invention as long as the same effects can be obtained and similar effects can be obtained.
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all semiconductor light-emitting elements that can be implemented by those skilled in the art based on the semiconductor light-emitting elements described above as embodiments of the present invention are included in the scope of the present invention as long as they include the gist of the present invention. Belonging to.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the scope of the invention described in the claims and the equivalents thereof.

  11: First semiconductor layer, 11a: First region, 11b: Second region, 11ba: First base semiconductor layer, 11baa: Semiconductor layer after base processing, 11e: Fifth region, 11f1: First semiconductor layer first surface 11f2: second surface of the first semiconductor layer, 11f3: third surface of the first semiconductor layer, 12: second semiconductor layer, 12ba: second base semiconductor layer, 12f2: second surface of the second semiconductor layer, 13: third Semiconductor layer, 13ba: third base semiconductor layer, 24: fourth semiconductor layer, 24c: third region, 24d: fourth region, 24f: fifth region, 25: fifth semiconductor layer, 25ep: part, 26: first 6 semiconductor layers, 26 ep: part, 31: first pad electrode, 32: second pad electrode, 41: first metal layer, 41a: first bonding metal layer, 41b: first bonding metal layer, 42: first 2 metal layers, 51: first semiconductor layer electrode, 52: 2 semiconductor layer electrodes, 52ba: second base semiconductor layer electrode, 54: fourth semiconductor layer electrode, 55: fifth semiconductor layer electrode, 61: first conductive layer, 61a: first portion, 61b: second portion, 62 : Second conductive layer, 62c: third part, 62d: fourth part, 63: third conductive layer, 63e: fifth part, 63f: sixth part, 63g: seventh part, 63fa1: third conductive layer 1 surface, 63fa2: second surface of the third conductive layer, 71: first insulating layer, 72: second insulating layer, 75: insulating layer, 76: resin layer, 76a: resin, 77: phosphor, 80: substrate, 80f1: substrate first surface, 80f2: substrate second surface, 81: opening, 81a: opening, 81ab: bottom, 82: opening, 82ab: bottom, 83: opening, 83a: opening, 84 to 88 : Opening, 90: unevenness, 91: first pad, 91P: first wire, 9 : Second pad, 92P: second wire, 95: substrate for growth, 100: semiconductor light emitting element, D3, D6: thickness, E1: first light emitting portion, E2: second light emitting portion, L1: first distance, L3: third distance, L5: distance, L6: distance, L7: distance, op1, op2: light, P1, P1c, P2, P2c, Pm, Pi, Pw, Pv: pattern

Claims (19)

A substrate;
A first semiconductor layer of a first conductivity type spaced apart from the base body in a first direction, including a first region and a second region aligned with the first region in a direction intersecting the first direction; The first semiconductor layer;
A second semiconductor layer of a second conductivity type provided between the second region and the substrate;
A third semiconductor layer provided between the second region and the second semiconductor layer;
A fourth semiconductor layer of the first conductivity type that is spaced apart from the base body in the first direction and is aligned with the first semiconductor layer in a direction intersecting the first direction, wherein the third region, the fourth region, The fourth semiconductor, wherein the fourth region is disposed between the second region and the third region, and the first region is disposed between the second region and the fourth region. Layers,
A fifth semiconductor layer of the second conductivity type provided between the fourth region and the substrate;
A sixth semiconductor layer provided between the fourth region and the fifth semiconductor layer;
A first conductive layer electrically connected to the first region, the first conductive layer including a first portion and a second portion provided between the first region and the base body When,
A second conductive layer including a third portion and a fourth portion;
A third conductive layer including a fifth portion and a sixth portion;
With
The second part is disposed between the fifth part and the base body and electrically connected to the fifth part;
The third portion is provided between the fifth semiconductor layer and the base body, and is electrically connected to the fifth semiconductor layer,
The fourth portion is disposed between the sixth portion and the base body and electrically connected to the sixth portion;
The third conductive layer is between the first semiconductor layer and the fourth semiconductor layer, between the second semiconductor layer and the fifth semiconductor layer, and between the third semiconductor layer and the sixth semiconductor layer. A semiconductor light emitting device disposed at least in any of the above. A second insulating layer;
The first semiconductor layer is disposed between the second insulating layer and the substrate;
The first semiconductor layer has a first semiconductor layer first surface facing the second insulating layer;
The third conductive layer is disposed between the second insulating layer and the substrate;
The third conductive layer has a first surface of a third conductive layer facing the second insulating layer;
The first distance along the first direction between the first surface of the first semiconductor layer and the substrate is a third distance along the first direction between the first surface of the third conductive layer and the substrate. The semiconductor light-emitting device according to claim 1, which is longer than 1.   3. The semiconductor light emitting element according to claim 1, wherein at least a part of the third conductive layer overlaps with the first semiconductor layer in a direction crossing the first direction.   4. The semiconductor light emitting element according to claim 1, wherein a thickness of the sixth portion in the first direction is larger than a thickness of the third portion in the first direction. A resin layer;
The resin layer includes a resin and a phosphor surrounded by the resin,
The phosphor is not disposed between the first semiconductor layer and the fourth semiconductor layer;
The semiconductor light emitting element according to claim 1.   The semiconductor according to claim 1, further comprising a second semiconductor layer electrode provided between the second semiconductor layer and the base body and electrically connected to the second semiconductor layer. Light emitting element. The second semiconductor layer has a second surface of the second semiconductor layer facing the second semiconductor layer electrode;
A distance along the first direction between the third conductive layer and the base is longer than a distance along the first direction between the second surface of the second semiconductor layer and the base;
The semiconductor light emitting device according to claim 6.   The semiconductor light-emitting element according to claim 6, wherein the second semiconductor layer electrode includes a material included in the second conductive layer.   The semiconductor light-emitting device according to claim 1, further comprising a fourth semiconductor layer electrode provided between the third region and the base body and electrically connected to the third region. element.   The semiconductor light emitting element according to claim 9, wherein the fourth semiconductor layer electrode includes a material included in the first conductive layer. A first semiconductor layer electrode;
The first semiconductor layer further includes a fifth region,
The second region is disposed between the first region and the fifth region;
The semiconductor light emitting element according to claim 1, wherein the first semiconductor layer electrode is provided between the fifth region and the base body and is electrically connected to the fifth region. .   The semiconductor light emitting element according to claim 11, wherein the first semiconductor layer electrode includes a material included in the first conductive layer. A fifth semiconductor layer electrode;
The fourth semiconductor layer further includes a sixth region,
At least a portion of the third region is disposed between the sixth region and the fourth region;
The fifth semiconductor layer further includes a portion extending between the sixth region and the base body,
The sixth semiconductor layer further includes a portion extending between the sixth region and the extending portion of the fifth semiconductor layer;
2. The fifth semiconductor layer electrode is provided between the extending portion of the fifth semiconductor layer and the base body and is electrically connected to the extending portion of the fifth semiconductor layer. The semiconductor light emitting element as described in any one of -12.   The semiconductor light emitting element according to claim 13, wherein the fifth semiconductor layer electrode includes a material included in the second conductive layer.   The semiconductor light emitting device according to claim 9, further comprising a first pad electrically connected to the fourth semiconductor layer electrode.   The semiconductor light emitting element according to claim 15, wherein at least a part of the first pad overlaps the fourth semiconductor layer in a direction intersecting the first direction.   The semiconductor light emitting device according to claim 7, further comprising a second pad electrically connected to the second semiconductor layer electrode.   18. The semiconductor light emitting element according to claim 17, wherein at least a part of the second pad overlaps the first semiconductor layer in a direction intersecting the first direction. The first semiconductor layer has an upper surface of a first semiconductor layer separated from the first region surface in the first direction,
The base has a base lower surface that is spaced apart from the first insulating layer in the first direction and intersects the first direction;
The intensity of the light emitted from the upper surface of the first semiconductor layer of the light emitted from the third semiconductor layer is higher than the intensity of the light emitted from the lower surface of the base body of the light. The semiconductor light-emitting device according to any one of the above.

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