JP2018169556A - Substrate for forming display device, display device, and method of manufacturing display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reliably peel a glass base material from a resin base material even if the thickness of the glass base material is uneven, and to reduce the weight, size and thickness of the final product in which a display device is used. Provided is a substrate for forming a display device, a display device, and a method for manufacturing the display device. A display device forming substrate 10 is for forming a display device. The display device forming substrate 10 is laminated on the glass base material 11, the peeling layer 12 which is laminated on the glass base material 11 and decomposed by absorbing the laser beam L, and the peeling layer 12 which is laminated on the peeling layer 12. A metal layer 13 capable of reflecting the laser beam L transmitted through the 12 is provided. The metal layer 13 has at least one of a gas barrier function, a stress relaxation function, an electromagnetic wave shielding function, and a heat dissipation function. [Selection diagram] Fig. 5

Description

  The present invention relates to a display device forming substrate, a display device, and a method for manufacturing the display device.

  2. Description of the Related Art Conventionally, display devices (organic EL display devices) that use organic EL (electroluminescence) elements as light emitting elements and light emitted from the light emitting elements as display light have been developed. Such display devices are widely used not only for televisions and desktop monitors, but also for portable electronic devices such as portable notebook computers, mobile phones, portable game machines, electronic readers, and electronic books. For this reason, further weight reduction, size reduction, and thickness reduction are required.

  In such a situation, as a display device member constituting the display device, a display device member using a flexible substrate made of a flexible film is proposed in place of the glass support substrate mainly used so far. Has been. In the display device member, the display device can be made flexible by using a flexible substrate such as a resin base material instead of the glass support substrate.

  When manufacturing such a flexible display device, a release layer (photothermal exchange film) and a resin substrate (PI layer) are formed in this order on a glass substrate, and a thin film transistor (TFT) or the like is formed on the resin substrate. After forming, the glass substrate is peeled from the resin substrate by irradiating the release layer with laser light (for example, Patent Document 1).

JP2015-138895A

  However, the thickness of the glass substrate may be non-uniform in the plane or may vary from one glass substrate to another. When thickness unevenness exists in such a glass substrate, the focal point of the laser beam may deviate from the release layer, and the irradiation amount of the laser beam irradiated to the release layer may change. In this case, there is a problem that the resin substrate is broken when the glass substrate is peeled off when the laser beam irradiation amount is reduced, and when the laser beam irradiation amount is increased, the resin substrate is burnt. There is a problem that wrinkles occur in the resin base material.

  In general, a final product such as a mobile phone using a display device is provided with a device such as a battery, and a back panel is provided between the device and the display device. The back panel is provided with a heat dissipation layer for dissipating heat generated from the device, an electromagnetic wave shielding layer for shielding electromagnetic waves generated from the device, and an impact protection layer for protecting the display device from an impact. It has been. For this reason, there is a limit to reducing the thickness of the back panel, and there is a problem that it is difficult to reduce the weight, size, and thickness of the final product.

  Furthermore, in general, the resin base material is provided with a barrier layer made of, for example, silicon dioxide, for protecting the thin film transistor and the like from oxygen and water entering from the outside and relaxing the stress acting on the display device and the like. Yes. For this reason, there is a limit in reducing the thickness of the resin substrate, and there is a problem that it is difficult to reduce the weight, size, and thickness of the final product.

  The present invention has been made in consideration of such points, and even if the thickness of the glass substrate is uneven, the glass substrate can be reliably peeled from the resin substrate, and the display device can It is an object of the present invention to provide a display device forming substrate, a display device, and a display device manufacturing method capable of reducing the weight, size, and thickness of a final product to be used.

  The present invention is a display device forming substrate for forming a display device, the glass substrate, a release layer laminated on the glass substrate and decomposed by absorbing laser light, and the release And a metal layer that can reflect the laser light transmitted through the release layer, and the metal layer has at least one of a gas barrier function, a stress relaxation function, an electromagnetic wave shielding function, and a heat dissipation function. It is a display apparatus formation board | substrate characterized by having.

  The present invention is the display device forming substrate, wherein the metal layer has a gas barrier function, and the metal layer contains an aluminum alloy.

  In the present invention, the metal layer has a stress relaxation function, and the metal layer is at least one of a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, an aluminum alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy. A display device formation substrate comprising one alloy.

  The present invention is the display device forming substrate, wherein the metal layer has an electromagnetic wave shielding function, and the metal layer includes a copper alloy.

  The present invention is the display device forming substrate, wherein the metal layer has a heat dissipation function, and the metal layer includes a copper alloy or an aluminum alloy.

  The present invention is the display device forming substrate, wherein the metal layer has a thickness of 10 nm to 1000 nm.

  The present invention is a display device forming substrate for forming a display device, the glass substrate, a release layer laminated on the glass substrate and decomposed by absorbing laser light, and the release And a metal layer capable of reflecting the laser light transmitted through the release layer, the metal layer comprising an aluminum alloy, a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, a silver alloy, and a palladium alloy. A display device forming substrate including at least one of a copper alloy and a tungsten alloy.

  The present invention includes a support base, a metal layer laminated on the support base, a resin base disposed on the metal layer, a thin film transistor disposed on the resin base, and the resin base. An organic EL element disposed on a material and electrically connected to the thin film transistor; and a sealing resin disposed on the organic EL element and encapsulating the organic EL element, wherein the metal layer includes a gas barrier. The display device has at least one of a function, a stress relaxation function, an electromagnetic wave shielding function, and a heat dissipation function.

  The present invention includes a support base, a metal layer laminated on the support base, a resin base disposed on the metal layer, a thin film transistor disposed on the resin base, and the resin base. An organic EL element disposed on a material and electrically connected to the thin film transistor; and a sealing resin disposed on the organic EL element and encapsulating the organic EL element, wherein the metal layer is made of aluminum. The display device includes at least one of an alloy, a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy.

  The present invention is a method for manufacturing a display device, the step of preparing a display device forming substrate according to the present invention, the step of disposing a resin base material on the metal layer of the display device forming substrate, and the resin A step of disposing a thin film transistor on a base material; a step of disposing an organic EL element electrically connected to the thin film transistor on the resin base material; and a step of sealing the organic EL element with a sealing resin. A step of disposing a temporary support base material that temporarily supports the display device on the sealing resin, and irradiating laser light toward the release layer from the glass base material side to A step of peeling from the metal layer, a step of placing a support substrate for supporting the display device on the metal layer from which the glass substrate has been peeled, and peeling the temporary support substrate from the sealing resin. With process It is a manufacturing method of a display device according to claim and.

  According to the present invention, even if there is unevenness in the thickness of the glass substrate, the glass substrate can be reliably peeled off from the resin substrate, and the weight and size of the final product in which the display device is used can be reduced. And can be made thinner.

FIG. 1 is a cross-sectional view showing a display device forming substrate according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a display device according to an embodiment of the present invention. 3A to 3C are cross-sectional views showing a method for manufacturing a display device forming substrate according to an embodiment of the present invention. 4A to 4E are cross-sectional views illustrating a method for manufacturing a display device according to an embodiment of the present invention. 5A to 5C are cross-sectional views illustrating a method for manufacturing a display device according to an embodiment of the present invention. 6A to 6D are cross-sectional views illustrating a method for manufacturing a display device according to an embodiment of the present invention.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS. Note that, in the following drawings, the same portions are denoted by the same reference numerals, and some detailed description may be omitted.

(Configuration of display device formation substrate)
First, referring to FIG. 1, an outline of a display device forming substrate according to the present embodiment will be described. FIG. 1 is a cross-sectional view showing a display device forming substrate according to the present embodiment.

  A display device forming substrate 10 shown in FIG. 1 is for producing a display device 20 (see FIG. 2) described later. The display device forming substrate 10 includes a glass base material 11, a release layer 12 laminated on the glass base material 11, a metal laminated on the release layer 12 and capable of reflecting the laser light transmitted through the release layer 12. Layer 13.

Among these, the glass base material 11 supports the whole display apparatus formation board | substrate 10, and consists of a flat plate-shaped member. As the glass substrate 11, a material that can transmit laser light is used. For example, transparent glass such as alkali-free glass, quartz glass, and Pyrex (registered trademark) can be used. The thickness t ₁ of the glass substrate 11 can be set in consideration of the strength of the material, suitability for handling, and the like, and can be set as appropriate within a range of about 150 μm to 900 μm, for example. In addition, the glass size of the glass base material 11 is arbitrary, For example, the glass base material 11 of G6 size (1800 mm x 1500 mm) can be used.

  The release layer 12 is a flat layer (adhesive layer) formed directly on the glass substrate 11. The release layer 12 adheres the glass substrate 11 and the metal layer 13 in the manufacturing process of the display device forming substrate 10 to be described later, and the glass substrate 11 is bonded to the metal layer 13 in the manufacturing process of the display device 20 thereafter. It is made to peel from.

As the release layer 12, a layer that generates heat by absorbing laser light, decomposes, and decreases or disappears in adhesion is used. Moreover, the thing with favorable adhesiveness with the material of the glass base material 11 is used for the peeling layer 12. FIG. As the peeling layer 12, for example, a peeling material such as amorphous silicon or polyimide having a characteristic of absorbing laser light having a specific wavelength (for example, 248 nm or 308 nm) such as an excimer laser (for example, BREWER BOND manufactured by Brewer Science, Inc.). Series, UPIA series (product name) manufactured by Ube Industries, Ltd. Uimide series (product name) manufactured by Unitika Ltd., Optmer AL series (product name) manufactured by JSR Corporation, TZNR- manufactured by Tokyo Ohka Kogyo Co., Ltd. A series (product name)) can be used. In particular, the release layer 12 preferably contains polyimide. Thereby, the peeling layer 12 can absorb a laser beam efficiently. The thickness _{t 2} of the release layer 12 may be appropriately set in a range of degree 50nm or 150nm or less. The thickness t ₂ of the release layer 12 by the above 50 nm, when manufacturing the display device forming substrate 10, it is possible to enhance the adhesion between the glass substrate 11 and the metal layer 13. Further, the thickness _{t 2} of the release layer 12 by a 150nm or less, it is possible to reduce the cost of the separation layer 12.

  As will be described later, the release layer 12 is formed on a glass substrate 11 by a die coating method, an ink jet method, a spray coating method, a plasma CVD method or a thermal CVD method, a capillary coating method, a slit and spin method, a center dropping method, or the like. The one formed by the above method is dried. The release layer 12 made of such a coating layer can improve the flatness as a whole, and can form the release layer 12 with high dimensional accuracy. In the present embodiment, the release layer 12 is formed by applying a polyimide precursor onto the glass substrate 11 by a spin method and drying it.

The metal layer 13 is for protecting a resin base material 22 described later formed on the display device forming substrate 10. Specifically, the metal layer 13 separates the resin base material 22 and the release layer 12 in the manufacturing process of the display device 20 to be described later, and at the time of modifying the release layer 12 with laser light, By reflecting the laser beam that has passed through the release layer 12 without being absorbed, it plays a role of protecting the resin substrate 22 from the laser beam. That is, the metal layer 13 modifies the release layer 12 without damaging the resin base material 22 by reflecting the laser beam. Examples of the laser used for modifying the release layer 12 include an excimer laser (wavelengths 248 nm and 308 nm), a YAG laser (wavelengths 355 nm, 532 nm, and 1064 nm), and a CO ₂ laser (wavelength 10640 nm). For this reason, it is preferable that the metal layer 13 has the reflectivity with respect to the laser used for modification | reformation of the peeling layer 12. FIG. In particular, it is preferable to have reflectivity with respect to an excimer laser, a YAG laser, or a CO ₂ laser. Further, the metal layer 13 shields the gas from the release layer 12 side when the release layer 12 is modified in the manufacturing process of the display device 20, and prevents thermal diffusion from occurring in the resin base material 22. To play a role. For this reason, the metal layer 13 has good laser light reflectivity, gas shielding from the release layer 12 side, good adhesion to the release layer 12, or good oxidation resistance or acid resistance. Is used.

  The metal layer 13 may have a gas barrier function. In this case, the metal layer 13 serves to protect a thin film transistor 23 and an organic EL element 24 described later of the display device 20 from oxygen or moisture entering from the outside in the display device 20 and the final product. For this reason, the metal layer 13 in this case has a good gas barrier property against oxygen or water vapor.

  The metal layer 13 may have a stress relaxation function. In this case, the metal layer 13 plays a role of relaxing stress acting on the glass substrate 11 and suppressing warpage of the glass substrate 11. That is, in the manufacturing process of the display device 20 to be described later, for example, when the resin base material 22 to be described later is formed on the metal layer 13, the resin base material 22 is applied to the resin base material 22 due to film forming stress at the time of film forming. Due to this expansion / contraction force, the glass substrate 11 is subjected to stress. On the other hand, when the metal layer 13 has a stress relaxation function, the stress which acts on the glass base material 11 is relieve | moderated and it suppresses that the curvature of the glass base material 11 generate | occur | produces. For this reason, the metal layer 13 in this case has a good stress relaxation property.

  The metal layer 13 may have an electromagnetic wave shielding function. In this case, in the final product in which the display device 20 is used, the metal layer 13 serves to shield electromagnetic waves generated from devices such as a battery and a CPU, and to protect a thin film transistor 23 and an organic EL element 24 described later of the display device 20. Fulfill. For this reason, the metal layer 13 in this case has a good electromagnetic wave shielding property.

  The metal layer 13 may have a heat dissipation function. In this case, the metal layer 13 serves to protect the thin film transistor 23 and the organic EL element 24 described later of the display device 20 by radiating heat generated from a device such as a battery in a final product in which the display device 20 is used. For this reason, the metal layer 13 in this case has a good heat dissipation.

As will be described later, such a metal layer 13 is formed on the release layer 12 by a technique such as sputtering, vapor deposition, ion plating, or CVD. For example, the metal layer 13 may be a layer having a reflectance of laser light of 60% or more. Examples of the material of the metal layer 13 include metal materials such as chromium, nickel, molybdenum, titanium, aluminum, silver, palladium, copper, tungsten, or an alloy containing at least one of them. In this case, the metal layer 13 may contain a molybdenum alloy, whereby the laser light transmitted through the release layer 12 can be efficiently reflected. Specifically, the metal layer 13 may be made of an alloy containing molybdenum, nickel and titanium, or an alloy containing molybdenum and niobium. In this case, the thickness t ₃ of the metal layer 13 can be appropriately set so that the reflectance of the laser beam is 60% or more, and is preferably about 30 nm to 150 nm, for example. The thickness t ₃ of the metal layer 13 by the above 30 nm, it is possible to reliably reflect the laser beam. Further, the thickness _{t 3} of the metal layer 13 by a 150nm or less, it is possible to reduce the cost of the metal layer 13. Molybdenum alloy has a high reflectance of laser light and a small difference in reflectance due to thickness. Thereby, when the metal layer 13 consists of molybdenum alloys, the reflectance of a laser beam can be raised irrespective of the thickness of the metal layer 13, and the thickness of the metal layer 13 can be made thin. For this reason, the cost of the metal layer 13 can be reduced. Further, since the molybdenum alloy has good adhesion to polyimide, when the metal layer 13 is made of molybdenum alloy and the release layer 12 is made of polyimide, when the display device forming substrate 10 is manufactured, The adhesion between the release layer 12 and the metal layer 13 can be improved.

Further, the metal layer 13, for example, water vapor transmission rate, 40 ° C., in the conditions of ^{100% Rh, 1.0 × 10 -4} cc / m 2 / day / atm or higher 1.0cc ^/ m 2 ^/ day ^/ atm The following layers can be used. In this case, the metal layer 13 may contain an aluminum alloy, whereby the gas barrier function of the metal layer 13 can be improved. For this reason, in the display device 20 and the final product in which the display device 20 is used, a thin film transistor 23 and an organic EL element 24 described later of the display device 20 can be protected from oxygen or moisture that has entered from the outside. In this case, the thickness _{t 3} of the metal layer 13 can be water vapor permeability of the metal layer 13 is appropriately set to a value described above, for example, preferably to or more than 1000nm or less 10 nm. By setting the thickness t ₃ of the metal layer 13 and over 10 nm, the gas barrier function of the metal layer 13 effectively improves, oxygen or moisture entering from the outside, the effect of the thin film transistor 23 and organic EL element 24 of the display device 20 Can be protected. Further, by setting the thickness t ₃ of the metal layer 13 to 1000 nm or less, the cost of the metal layer 13 can be reduced and the film formation time of the metal layer 13 can be shortened. In addition, the occurrence of cracks in the metal layer 13 can be suppressed. The water vapor transmission rate can be measured using a water vapor transmission rate measuring device (for example, DELTAPERRM (manufactured by Technolox)). In addition, even when the metal layer 13 contains an aluminum alloy, the laser light transmitted through the release layer 12 can be reflected.

Further, the metal layer 13 can be a layer in which, for example, the amount of warpage of the display device forming substrate 10 is 0.3 mm or less. In this case, the metal layer 13 may include at least one of a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, an aluminum alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy. The stress relaxation function of the metal layer 13 can be improved. For this reason, the stress which acts on the glass base material 11 can be relieved, and it can suppress that the glass base material 11 generate | occur | produces curvature. In this case, the flatness of the glass substrate 11 can be improved, and the positional accuracy in which the thin film transistor 23 and the like are arranged in the subsequent manufacturing process of the display device 20 can be improved. Furthermore, the metal layer 13 can increase the rigidity of the display device forming substrate 10 and the display device 20, and can also suppress warping generated in the display device forming substrate 10 and the display device 20. In this case, the thickness t ₃ of the metal layer 13 can be appropriately set so that the warpage of the display device forming substrate 10 is 0.3 mm or less, and is preferably about 10 nm to 1000 nm, for example. By setting the thickness t ₃ of the metal layer 13 and over 10 nm, the rigidity of the metal layer 13, effectively reduce the stress acting on the glass substrate 11, effectively suppressing the warping of the glass substrate 11 be able to. Further, by setting the thickness t ₃ of the metal layer 13 to 1000 nm or less, the cost of the metal layer 13 can be reduced and the film formation time of the metal layer 13 can be shortened. In addition, the occurrence of cracks in the metal layer 13 can be suppressed. The amount of warpage is measured, for example, by placing the display device forming substrate 10 on a flat surface plate and measuring the maximum thickness at which the gap gauge can penetrate between the surface plate and the display device forming substrate 10. Can do. Further, even when the metal layer 13 includes at least one of a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, an aluminum alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy, the peeling is performed. The laser light transmitted through the layer 12 can be reflected.

The metal layer 13 can be a layer having a surface resistivity of 1Ω / □ or more and 3000Ω / □ or less, for example. In this case, the metal layer 13 may contain a copper alloy, whereby the electromagnetic wave shielding function of the metal layer 13 can be improved. Therefore, in a final product in which the display device 20 is used, electromagnetic waves generated from devices such as a battery and a CPU can be shielded, and a thin film transistor 23 and an organic EL element 24 described later of the display device 20 can be protected. In this case, the thickness t ₃ of the metal layer 13 can be appropriately set so that the surface resistivity is 1 Ω / □ or more and 3000 Ω / □ or less, and is preferably about 10 nm or more and 1000 nm or less, for example. By setting the thickness t ₃ of the metal layer 13 and over 10 nm, the electromagnetic wave shielding function of the metal layer 13 effectively improves, in the final product, which display device 20 is used, a battery, an electromagnetic wave generated from equipment such as a CPU It can be effectively shielded. Further, by setting the thickness t ₃ of the metal layer 13 to 1000 nm or less, the cost of the metal layer 13 can be reduced and the film formation time of the metal layer 13 can be shortened. In addition, the occurrence of cracks in the metal layer 13 can be suppressed. The sheet resistivity can be measured using a resistivity meter (for example, Loresta (registered trademark) manufactured by Mitsubishi Chemical Analytech). Even if the metal layer 13 contains a copper alloy, the laser light transmitted through the release layer 12 can be reflected.

Further, the metal layer 13 can be a layer having a thermal conductivity of 200 W / m · K or more, for example. In this case, the metal layer 13 may contain a copper alloy or an aluminum alloy, whereby the heat dissipation function of the metal layer 13 can be improved. For this reason, in the final product in which the display device 20 is used, heat generated from devices such as a battery and a CPU can be radiated to protect a thin film transistor 23 and an organic EL element 24 described later of the display device 20. In this case, the thickness t ₃ of the metal layer 13 is preferably about 10 nm to 1000 nm, for example. By setting the thickness t ₃ of the metal layer 13 and over 10 nm, the heat dissipation function of the metal layer 13 effectively improves, in the final product, which display device 20 is used, heat efficiently generated from a device such as a battery It can dissipate heat. Further, by setting the thickness t ₃ of the metal layer 13 to 1000 nm or less, the cost of the metal layer 13 can be reduced and the film formation time of the metal layer 13 can be shortened. In addition, the occurrence of cracks in the metal layer 13 can be suppressed. Even when the metal layer 13 contains a copper alloy or an aluminum alloy, the laser light transmitted through the release layer 12 can be reflected.

  In the present embodiment, as shown in FIG. 1, the release layer 12 and the metal layer 13 cover the entire area of the glass substrate 11, but the present invention is not limited to this, and the metal layer 13 will be described later. As long as the entire region of the resin base material 22 can be covered, the peripheral edge portion 12 e of the release layer 12 and the peripheral edge portion 13 e of the metal layer 13 may be recessed inside the peripheral edge portion 11 e of the glass base material 11. That is, the planar shape of the release layer 12 may be smaller than the planar shape of the glass substrate 11 over the entire circumference.

(Configuration of display device)
Next, an outline of the display device according to the present embodiment will be described with reference to FIG. FIG. 2 is a cross-sectional view showing the display device according to the present embodiment. In this display device, a plurality of organic EL elements 24 and the like to be described later are arranged on the display device forming substrate 10 described above, the glass substrate 11 and the release layer 12 are removed, and then each organic EL element 24 is cut. And formed by singulation.

  A display device 20 shown in FIG. 2 includes a support base material 21, a metal layer 13 that is laminated on the support base material 21 and that forms the display device forming substrate 10 described above, and a resin that is disposed on the metal layer 13. Base material 22, thin film transistor (TFT) 23 disposed on resin base material 22, organic EL element 24 disposed on resin base material 22, and sealing resin (TFE) disposed on organic EL element 24 25).

  Among these, the support base material 21 supports the whole display apparatus 20, and consists of a film which has flexibility. As will be described later, the support base 21 is attached to the metal layer 13 with an adhesive. For example, polyethylene terephthalate can be used as the support substrate 21. The thickness of the support base material 21 can be set in consideration of the strength of the material, suitability for handling, and the like, and can be set as appropriate within a range of, for example, about 50 μm to 250 μm.

  The metal layer 13 constitutes the display device forming substrate 10 described above, and is interposed between the support base material 21 and the resin base material 22. The configuration of the metal layer 13 is the same as that of the metal layer 13 of the display device forming substrate 10 described above, and detailed description thereof is omitted here.

  The resin base material 22 supports the thin film transistor 23, the organic EL element 24, and the like in the manufacturing process of the display device 20 to be described later, and is formed of a flexible flat layer directly formed on the metal layer 13. . As will be described later, the resin base material 22 is formed on the metal layer 13 by a die coating method, an ink jet method, a spray coating method, a plasma CVD method or a thermal CVD method, a capillary coating method, a slit and spin method, or a central dropping method. The coating is formed by a technique. The resin base material 22 is preferably made of a material that is more flexible than the glass base material 11 and has excellent heat resistance. As the resin base material 22, for example, colored polyimide (for example, UPIA-ST (product name) manufactured by Ube Industries, Ltd.) can be used. The thickness of the resin base material 22 can be set in consideration of the strength of the material, suitability for handling, etc., and can be set as appropriate within a range of, for example, about 5 μm to 20 μm.

  The thin film transistor 23 is for driving the organic EL element 24, and controls a voltage applied to a first electrode 26 and a second electrode 28 described later of the organic EL element 24.

  The organic EL element 24 is electrically connected to the thin film transistor 23. As shown in FIG. 2, the organic EL element 24 includes a first electrode (reflective electrode) 26 disposed on the resin base material 22, an organic light emitting layer 27 disposed on the first electrode 26, and an organic light emitting layer. And a second electrode (transparent electrode) 28 disposed on the surface 27. Here, an example in which the first electrode 26 constitutes an anode and the second electrode 28 constitutes a cathode will be described. However, the polarities of the first electrode 26 and the second electrode 28 are not particularly limited.

  As will be described later, the first electrode 26 is formed on the resin base material 22 by a technique such as sputtering, vapor deposition, ion plating, or CVD. As the material of the first electrode 26, it is preferable to use a material that can inject holes efficiently. Examples of the material of the first electrode 26 include metal materials such as aluminum, chromium, molybdenum, tungsten, copper, silver, gold, and alloys thereof.

  As will be described later, the organic light emitting layer 27 is formed on the first electrode 26 by a vapor deposition method, a nozzle coating method in which a coating liquid is applied from a nozzle, or a printing method such as inkjet. The organic light emitting layer 27 preferably contains a fluorescent organic material configured to emit white light by applying a predetermined voltage. For example, quinolinol complex, oxazole complex, various laser dyes, polyparaphenylene Examples include vinylene.

  As will be described later, the second electrode 28 is formed on the organic light emitting layer 27 by a technique such as sputtering, vapor deposition, ion plating, or CVD. As the material of the second electrode 28, it is preferable to use a material that is easy to inject electrons and has good light transmittance. Examples of the material of the second electrode 28 include lithium oxide and cesium carbonate.

  The light emitted from the organic EL element 24 is extracted to the side opposite to the side where the resin base material 22 is located. That is, the light from the organic EL element 24 is extracted from above the sealing resin 25. As described above, the display device 20 in the present embodiment is a so-called top emission type display device.

  The sealing resin 25 is for sealing the organic EL element 24 and protecting the organic EL element 24. As will be described later, the sealing resin 25 is formed on the resin base material 22, the thin film transistor 23, the first electrode 26, and the second electrode 28 by a die coating method, an ink jet method, a spray coating method, a plasma CVD method or a thermal CVD method, a capillary coating method. It is formed by coating using a method such as a method, a slit and spin method, or a central dropping method. The sealing resin 25 is preferably made of a material that is more flexible than the glass substrate 11 described above. For example, a silicone resin or an acrylic resin can be used as the sealing resin 25. The thickness of the sealing resin 25 (distance from the top surface of the resin base material 22 to the top surface of the sealing resin 25 in FIG. 2) can be set in consideration of the strength of the material, the suitability for handling, etc., for example, 1 μm or more It can be appropriately set within a range of about 50 μm or less.

  In the present embodiment, as shown in FIG. 2, an example in which the display device 20 is a top emission type has been described. However, the present invention is not limited to this, and the display device 20 may be a so-called bottom emission type. Good.

(Method for manufacturing display device forming substrate)
Next, with reference to FIGS. 3A to 3C, a method for manufacturing a display device forming substrate according to the present embodiment will be described. 3A to 3C are cross-sectional views illustrating a method for manufacturing a display device formation substrate according to the present embodiment.

  First, as shown to Fig.3 (a), the glass base material 11 which consists of a flat plate-shaped member is prepared. At this time, for example, a glass substrate 11 of G6 size (1800 mm × 1500 mm) is prepared. As the glass substrate 11, for example, alkali-free glass, quartz glass, and Pyrex (registered trademark) can be used.

  Next, as shown in FIG. 3B, the release layer 12 is directly laminated on the glass substrate 11. As described above, as the release layer 12, a layer that generates heat by being absorbed by laser light and is decomposed to reduce or eliminate the adhesion is used. For example, as the release layer 12, a release material such as polyimide having a characteristic of absorbing a specific wavelength (eg, wavelength 308 nm) such as an excimer laser or a specific wavelength (eg, wavelength 355 nm) of a Ne-YAG laser is used. Can do. In particular, the release layer 12 preferably contains polyimide.

  The release layer 12 is formed by a technique such as a die coating method, an ink jet method, a spray coating method, a capillary coating method, a slit and spin method, or a central dropping method. For this reason, compared with the case where a foaming adhesive film, a tape, etc. are stuck on the glass base material 11, there is no possibility that the film, the tape, etc. may have a thickness unevenness such as swell or adhesive, and the release layer 12 is flat. Can increase the sex. In this way, the release layer 12 is formed on the glass substrate 11. In the present embodiment, the release layer 12 is formed, for example, by setting the rotational speed of the glass substrate 11 to 2500 rpm and applying a polyimide precursor on the glass substrate 11 by a spin method, It is formed by drying under reduced pressure conditions of 25 Pa using (VCD) and baking under conditions of 300 ° C. for 5 minutes.

  Subsequently, as shown in FIG. 3C, a metal layer 13 is laminated on the release layer 12. The metal layer 13 is for protecting the resin base material 22 formed on the display device forming substrate 10 in a later step. As the metal layer 13, a layer having good laser light reflectivity and gas shielding properties from the peeling layer 12 side is used. The metal layer 13 may be made of a metal material such as chromium, molybdenum, titanium, aluminum, silver, copper, nickel, palladium, tungsten, or an alloy containing at least one of them. In this case, the metal layer 13 may contain a molybdenum alloy. Specifically, the metal layer 13 may be made of an alloy containing molybdenum, nickel and titanium, or an alloy containing molybdenum and niobium. The metal layer 13 is formed on the release layer 12 by a technique such as sputtering, vapor deposition, ion plating, or CVD. For this reason, the thin metal layer 13 can be formed uniformly and flatly.

  The metal layer 13 may contain an aluminum alloy. Thereby, the gas barrier function of the metal layer 13 can be improved, and in the display device 20 and the final product in which the display device 20 is used, the thin film transistor 23 and the organic EL element 24 of the display device 20 from oxygen or moisture entering from the outside. Can be protected.

  Further, the metal layer 13 may include at least one of a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, an aluminum alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy. Thereby, the stress relaxation property of the metal layer 13 can be improved, the stress which acts on the glass base material 11 can be relieved, and the curvature which acts on the glass base material 11 can be suppressed. In addition, the metal layer 13 can increase the rigidity of the display device forming substrate 10 and the display device 20, and can also suppress warping generated in the display device forming substrate 10 and the display device 20.

  The metal layer 13 may contain a copper alloy. Thereby, the electromagnetic wave shielding property of the metal layer 13 can be improved, and in a final product in which the display device 20 is used, an electromagnetic wave generated from a device such as a battery is shielded. The element 24 can be protected.

  The metal layer 13 may contain a copper alloy or an aluminum alloy. Thereby, the heat dissipation of the metal layer 13 can be improved, and in a final product in which the display device 20 is used, heat generated from a device such as a battery is radiated, and a thin film transistor 23 and an organic EL element described later of the display device 20 24 can be protected.

  In this way, the display device forming substrate 10 shown in FIG. 1 is obtained.

(Manufacturing method of display device)
Next, a manufacturing method of the display device according to the present embodiment will be described with reference to FIGS. 4A to 4E, 5A to 5C, and 6A to 6D. 4 (a)-(e), 5 (a)-(c) and 6 (a)-(d) are cross-sectional views illustrating a method of manufacturing a display device according to the present embodiment.

  First, the display device forming substrate 10 is manufactured by the method shown in FIGS. 3A to 3C, for example (FIG. 4A).

  Next, the resin base material 22 is arrange | positioned on the metal layer 13 of the board | substrate 10 for display apparatus formation (FIG.4 (b)). As the resin base material 22, a resin base material that is more flexible than the glass base material 11 and excellent in heat resistance may be used. For example, as the resin base material 22, colored polyimide can be used. The resin base material 22 is formed on the metal layer 13 by a technique such as a die coating method, an inkjet method, a spray coating method, a plasma CVD method or a thermal CVD method, a capillary coating method, a slit and spin method, or a central dropping method. . In addition, when forming the resin base material 22 on the metal layer 13, the resin base material 22 generate | occur | produces the expansion-contraction force which expands / contracts the resin base material 22 with the film-forming stress at the time of film forming. Then, a stress acts on the glass substrate 11 by this stretching force. On the other hand, when the metal layer 13 has a stress relaxation function, the stress acting on the glass substrate 11 can be relaxed. Thereby, it can suppress that curvature generate | occur | produces in the glass base material 11. FIG. In this case, the flatness of the glass substrate 11 can be improved, and the positional accuracy in which the thin film transistor 23 and the like are arranged in the subsequent manufacturing process of the display device 20 can be improved.

  Next, the thin film transistor 23 is disposed on the resin base material 22 (FIG. 4C). At this time, although not shown, a plurality of thin film transistors 23 corresponding to the respective display devices 20 are arranged on the resin base material 22. In this way, the first intermediate 20a of the display device 20 is formed. After the plurality of thin film transistors 23 are arranged on the resin base material 22, the first intermediate body 20a of the display device 20 is cut into, for example, a half size in a plan view by a cutting device (not shown). The

  Next, the organic EL element 24 is arrange | positioned on the resin base material 22 (FIG.4 (d)). At this time, although not shown, a plurality of organic EL elements 24 each corresponding to each display device 20 are arranged on the resin base material 22. Each organic EL element 24 includes a first electrode 26 disposed on the resin substrate 22, an organic light emitting layer 27 disposed on the first electrode 26, and a second electrode disposed on the organic light emitting layer 27. 28. In this case, first, the first electrode 26 is formed on the resin base material 22. The first electrode 26 is made of a material that can inject holes efficiently. For example, as the first electrode 26, a metal material such as aluminum, chromium, molybdenum, tungsten, copper, silver, gold, or an alloy thereof can be used. The first electrode 26 is formed on the resin base material 22 by a technique such as sputtering, vapor deposition, ion plating, or CVD. At this time, the first electrode 26 of the organic EL element 24 is electrically connected to the thin film transistor 23.

  Next, the organic light emitting layer 27 is formed on the first electrode 26. As the organic light emitting layer 27, a material containing a fluorescent organic material configured to emit white light by applying a predetermined voltage is used. For example, as the organic light emitting layer 27, a quinolinol complex, an oxazole complex, various laser dyes, polyparaphenylene vinylene, or the like can be used. The organic light emitting layer 27 is formed on the first electrode 26 by a vapor deposition method, a nozzle coating method in which a coating liquid is applied from a nozzle, or a printing method such as inkjet.

  Next, the second electrode 28 is formed on the organic light emitting layer 27. The second electrode 28 is made of a material that is easy to inject electrons and has good light transmittance. For example, as the second electrode 28, lithium oxide, cesium carbonate, or the like can be used. The second electrode 28 is formed on the organic light emitting layer 27 by a technique such as sputtering, vapor deposition, ion plating, or CVD. In this way, the organic EL element 24 is disposed on the resin base material 22.

  Next, the organic EL element 24 disposed on the resin base material 22 is sealed with a sealing resin 25 (FIG. 4E). The sealing resin 25 may be made of a material that is more flexible than the glass substrate 11 described above. For example, as the sealing resin 25, a silicone resin or an acrylic resin is used. The sealing resin 25 is formed on the resin base material 22, the thin film transistor 23, the first electrode 26 and the second electrode 28 by a die coating method, an ink jet method, a spray coating method, a plasma CVD method or a thermal CVD method, a capillary coating method, a slit and a spin. It is formed by a method such as a method or a central dropping method. In this way, the organic EL element 24 is covered with the sealing resin 25.

  Next, the temporary support base material 29 is disposed on the sealing resin 25 (FIG. 5A). The temporary support base material 29 temporarily supports the first intermediate body 20a of the display device 20 produced in the manufacturing process of the display device 20. As the temporary support base material 29, a flexible film is used. For example, as the temporary support base material 29, a film made of polyethylene terephthalate can be used. The temporary support base material 29 may be affixed on the sealing resin 25 with an adhesive. The thickness of the temporary support base material 29 can be set in consideration of the strength of the material, suitability for handling, and the like, and can be set as appropriate within a range of, for example, about 50 μm to 250 μm. Thus, the 2nd intermediate body 20b of the display apparatus 20 with which the temporary support base material 29 is arrange | positioned is produced.

  Subsequently, the second intermediate body 20 b of the manufactured display device 20 is inverted, and the glass substrate 11 is peeled from the metal layer 13. At this time, laser light L such as excimer laser (wavelength 248 nm or 308 nm) or YAG laser is irradiated from the glass substrate 11 side (FIG. 5B). The laser beam L is emitted from a laser beam irradiation device (not shown), and the laser beam L is scanned uniformly within the surface of the second intermediate 20b. The laser beam L thus irradiated passes through the transparent glass substrate 11 and reaches the release layer 12. As described above, the adhesion of the release layer 12 decreases or disappears when it is modified. For this reason, by the modification | reformation by the laser beam L, the adhesive force of the peeling layer 12 falls or lose | disappears, and the glass base material 11 peels from the metal layer 13 (FIG.5 (c)).

  On the other hand, a metal layer 13 is provided on the surface of the release layer 12 opposite to the glass substrate 11. For this reason, the laser beam L that has passed through the release layer 12 is reflected by the metal layer 13 and returned to the glass substrate 11 side. Therefore, the laser light L does not reach the resin base material 22, and the laser light L transmitted through the release layer 12 does not adversely affect the resin base material 22. In addition, the metal layer 13 maintains the state closely_contact | adhered to the resin base material 22. FIG.

  Subsequently, the support base material 21 which supports the display apparatus 20 is arrange | positioned on the metal layer 13 from which the glass base material 11 was peeled (FIG. 6 (a)). For the support base material 21, a film having more flexibility than the glass base material 11 described above is used. For example, as the support substrate 21, a film made of polyethylene terephthalate can be used. The support base material 21 may be attached to the metal layer 13 with an adhesive. In this manner, the second intermediate body 20b of the display device 20 is supported by the support base material 21.

  Next, the second intermediate body 20b of the display device 20 is reversed (FIG. 6B).

  Thereafter, the temporary support base material 29 is peeled from the sealing resin 25 (FIG. 6C). In addition, after peeling the temporary support base material 29 from the sealing resin 25, the 2nd intermediate body 20b of the display apparatus 20 is cut | disconnected and separated into each display apparatus 20 with a cutting device (not shown). (FIG. 6 (d)).

  Through the series of steps described above, the display device 20 shown in FIG. 2 can be obtained (FIG. 6D).

  Thus, according to this Embodiment, the peeling layer 12 is decomposed | disassembled by absorbing the laser beam L, and the metal layer 13 can reflect the laser beam L which permeate | transmitted the peeling layer 12. FIG. Thereby, in the manufacturing process of the display apparatus 20, while the glass base material 11 can be reliably peeled from the metal layer 13, when heating the peeling layer 12 with the laser beam L, the resin base material 22 is removed from the laser beam L. Can be protected. As a result, breakage of the glass substrate 11 or generation of wrinkles on the resin substrate 22 can be suppressed. That is, considering that the thickness of the glass substrate 11 is uneven, it can be set so that the focal point of the laser light L reaches the release layer 12 reliably. In this case, even if the focus of the laser beam L is shifted to the resin substrate 22 side due to the uneven thickness of the glass substrate 11, the laser beam L is reflected by the metal layer 13. As a result, the resin base material 22 is protected by the metal layer 13, and a problem that the laser light L reaches the resin base material 22 is prevented.

  Further, since the focal point of the laser beam L reliably reaches the peeling layer 12, the peeling layer 12 can be decomposed and the glass substrate 11 can be reliably removed without damaging fragile elements such as the organic EL element 24. it can.

  Further, according to the present embodiment, the metal layer 13 has at least one of a gas barrier function, a stress relaxation function, an electromagnetic wave shielding function, and a heat dissipation function. Thereby, it is not necessary to provide at least one layer among the heat dissipation layer, the electromagnetic wave shielding layer, and the barrier layer provided on the resin base material that are generally provided on the back panel of the final product. For this reason, the final product can be reduced in weight, size, and thickness.

  Moreover, according to this Embodiment, the metal layer 13 contains the aluminum alloy. Thereby, the gas barrier function of the metal layer 13 can be improved. For this reason, in the display device 20 and the final product in which the display device 20 is used, the thin film transistor 23 and the organic EL element 24 can be protected from oxygen or moisture entering from the outside. As a result, it is not necessary to provide at least a barrier layer provided on the resin substrate, and the final product can be reduced in weight, size, and thickness.

  Further, according to the present embodiment, the metal layer 13 includes at least one of a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, an aluminum alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy. Yes. Thereby, the stress relaxation function of the metal layer 13 can be improved. For this reason, the stress which acts on the glass base material 11 can be relieved. Thereby, it can suppress that curvature generate | occur | produces in the glass base material 11. FIG. As a result, the flatness of the glass substrate 11 can be improved, and the positional accuracy in which the thin film transistors 23 and the like are arranged in the subsequent manufacturing process of the display device 20 can be improved. In addition, the metal layer 13 can increase the rigidity of the display device forming substrate 10 and the display device 20, and can also suppress warping generated in the display device forming substrate 10 and the display device 20. For this reason, it is not necessary to provide at least a barrier layer provided on the resin base material, and the final product can be reduced in weight, size, and thickness.

  Moreover, according to this Embodiment, the metal layer 13 contains the copper alloy. Thereby, the electromagnetic wave shielding function of the metal layer 13 can be improved. For this reason, in the final product in which the display device 20 is used, electromagnetic waves generated from devices such as a battery can be shielded, and a thin film transistor 23 and an organic EL element 24 described later of the display device 20 can be protected. As a result, it is not necessary to provide at least the electromagnetic wave shielding layer provided on the back panel of the final product, and the final product can be reduced in weight, size, and thickness.

  Moreover, according to this Embodiment, the metal layer 13 contains the copper alloy or the aluminum alloy. Thereby, the heat dissipation function of the metal layer 13 can be improved. For this reason, in the final product in which the display device 20 is used, heat generated from a device such as a battery can be radiated to protect a thin film transistor 23 and an organic EL element 24 described later of the display device 20. As a result, it is not necessary to provide at least a heat dissipation layer provided on the back panel of the final product, and the final product can be reduced in weight, size, and thickness.

  A plurality of constituent elements disclosed in the above-described embodiment can be appropriately combined as necessary. Or you may delete a some component from all the components shown by the said embodiment.

DESCRIPTION OF SYMBOLS 10 Display apparatus formation substrate 11 Glass base material 12 Peeling layer 13 Metal layer 20 Display apparatus 21 Support base material 22 Resin base material 23 Thin-film transistor 24 Organic EL element 25 Sealing resin 29 Temporary support base material

Claims (10)

A display device forming substrate for forming a display device,
A glass substrate;
A release layer laminated on the glass substrate and decomposed by absorbing laser light;
A metal layer that is laminated on the release layer and can reflect the laser light transmitted through the release layer;
The substrate for forming a display device, wherein the metal layer has at least one of a gas barrier function, a stress relaxation function, an electromagnetic wave shielding function, and a heat dissipation function.   The display device forming substrate according to claim 1, wherein the metal layer has a gas barrier function, and the metal layer includes an aluminum alloy.   The metal layer has a stress relaxation function, and the metal layer is made of at least one of a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, an aluminum alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy. The display device forming substrate according to claim 1, further comprising:   The display device forming substrate according to claim 1, wherein the metal layer has an electromagnetic wave shielding function, and the metal layer includes a copper alloy.   The display device forming substrate according to claim 1, wherein the metal layer has a heat dissipation function, and the metal layer includes a copper alloy or an aluminum alloy.   The display device forming substrate according to claim 1, wherein the metal layer has a thickness of 10 nm to 1000 nm. A display device forming substrate for forming a display device,
A glass substrate;
A release layer laminated on the glass substrate and decomposed by absorbing laser light;
A metal layer that is laminated on the release layer and can reflect the laser light transmitted through the release layer;
The display device forming substrate, wherein the metal layer includes at least one of an aluminum alloy, a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy. A support substrate;
A metal layer laminated on the support substrate;
A resin substrate disposed on the metal layer;
A thin film transistor disposed on the resin substrate;
An organic EL element disposed on the resin substrate and electrically connected to the thin film transistor;
A sealing resin that is disposed on the organic EL element and seals the organic EL element;
The display device, wherein the metal layer has at least one of a gas barrier function, a stress relaxation function, an electromagnetic wave shielding function, and a heat dissipation function. A support substrate;
A metal layer laminated on the support substrate;
A resin substrate disposed on the metal layer;
A thin film transistor disposed on the resin substrate;
An organic EL element disposed on the resin substrate and electrically connected to the thin film transistor;
A sealing resin that is disposed on the organic EL element and seals the organic EL element;
The display device, wherein the metal layer includes at least one of an aluminum alloy, a chromium alloy, a nickel alloy, a molybdenum alloy, a titanium alloy, a silver alloy, a palladium alloy, a copper alloy, and a tungsten alloy. A method for manufacturing a display device, comprising:
Preparing a display device forming substrate according to any one of claims 1 to 7,
Arranging a resin base material on the metal layer of the display device forming substrate;
Placing a thin film transistor on the resin substrate;
Placing an organic EL element electrically connected to the thin film transistor on the resin substrate;
Sealing the organic EL element with a sealing resin;
A step of disposing a temporary support base material that temporarily supports the display device on the sealing resin;
Peeling the glass substrate from the metal layer by irradiating the release layer with laser light from the glass substrate side;
A step of disposing a support base material for supporting the display device on the metal layer from which the glass base material has been peeled;
And a step of peeling the temporary support substrate from the sealing resin.

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