JP2019145687A - Cleaning tool, substrate cleaning device, and substrate cleaning method - Google Patents

Abstract

To provide a technique for cleaning a side surface of a wafer containing a bevel part at high efficiency when cleaning a back surface of the wafer and the bevel part.SOLUTION: A cleaning apparatus for cleaning a back surface of a wafer W, provides a lower surface side brush part 60 that is rotated in a vertical axial periphery in the cleaning apparatus, and a peripheral side brush part 70 independent from the lower surface side brush part 60 at a position opposite to the wafer W held in a spin chuck 3 in the lower surface side brush part 60. When the peripheral side brush part 70 is positioned at an outer side from an outer periphery of the wafer W in a state where the lower surface side brush part 60 is pressed to the back surface of the wafer W, it is structured that the height becomes higher than that of an upper end of a bevel part on a lower surface side of the wafer W. Further, an inclined plane higher than a height dimension of the bevel part on the lower surface side of the wafer at a lower side portion in the peripheral side brush part 70 is provided, and a vertical surface is provided in an upper direction of the inclined plane.SELECTED DRAWING: Figure 9

Description

  The present invention relates to a technique for cleaning by bringing a cleaning tool into contact with a substrate.

In a semiconductor device manufacturing process, for example, in order to keep a semiconductor wafer (hereinafter referred to as a wafer) in a clean state, a process for cleaning the wafer as necessary is provided before and after each manufacturing process and processing process.
As the circuit pattern is miniaturized, it is necessary to perform such wafer cleaning on the back surface of the wafer as a defocus countermeasure. Defocusing is a phenomenon in which the focus is lost during exposure due to the warping of the wafer. For example, particles attached to the back surface of the wafer are exposed between the stage on which the wafer is placed and the wafer. Occurs when done.

  In addition, for particles adhering not only to the back surface of the wafer but also to the bevel portion of the wafer, for example, when immersion exposure is performed, particles on the bevel portion may be swept away by the liquid and wrap around the upper surface side of the wafer. . Further, after the photomask is formed, particles adhering to the bevel portion may become a contamination source in the etching process or the like when using the mechanical chuck.

  Thus, further reduction of particles adhering to the bevel portion of the wafer is effective in order to suppress a decrease in yield due to further miniaturization of patterns in the future. Further, since a processing step for polishing the bevel portion has been studied, a method for reliably removing particles from the bevel portion is desired.

  For example, Patent Document 1 includes a cleaning tool including a first cleaning unit that cleans the back surface of a wafer and a second cleaning unit that cleans the bevel portion so as to surround the first cleaning unit. A cleaning device is described. In this cleaning apparatus, the second cleaning unit is disposed below the bevel portion of the wafer, and the cleaning tool is pressed so that a part of the second cleaning unit is detached from the lower side of the wafer. Even when the portion is pressed against the wafer and crushed, the second cleaning portion rises and contacts the bevel portion on the lower surface side of the wafer for cleaning.

  However, in such a cleaning apparatus, the back surface of the wafer and the bevel portion on the lower surface side of the wafer can be cleaned efficiently, but the side surface portion of the wafer and the bevel portion on the upper surface side of the wafer cannot be cleaned sufficiently. There is a problem that particles remain.

JP 2012-23209 A

  The present invention has been made under such circumstances, and an object of the present invention is to provide a technique for efficiently cleaning the bevel portion when cleaning the back surface and the bevel portion of the substrate.

For this reason, the cleaning tool of the present invention includes a base body that is movable in the left-right direction relative to the substrate, which is a semiconductor wafer held by a rotatable substrate holding unit,
A first cleaning section that is rotatably provided on the base body and that cleans the lower surface that is the back surface of the substrate;
A second cleaning unit provided on the base body independently of the first cleaning unit, for cleaning the bevel portion of the substrate,
When the first cleaning unit is positioned outside the outer periphery of the substrate in a state where the first cleaning unit is pressed against the back surface of the substrate, the second cleaning unit is arranged at the upper end of the inclined portion on the lower surface side of the bevel portion of the substrate. It is characterized by being configured to be higher than the height.

Moreover, the substrate cleaning apparatus of the present invention includes the above-described cleaning tool,
And a substrate holding portion that holds the center of the back surface of the circular substrate and rotates around the vertical axis.

Furthermore, the substrate cleaning method of the present invention is a substrate cleaning method for cleaning the back surface of a circular substrate.
Using the above substrate cleaning apparatus,
Rotating the first cleaning unit around a vertical axis in a state where the first cleaning unit is in contact with the lower surface of the substrate held by the substrate holding unit;
Cleaning the lower surface side bevel portion of the substrate by rotating the substrate in a state where the inclined surface of the second cleaning portion is in contact with the inclined portion of the lower surface side of the bevel portion of the substrate. .

According to the present invention, when cleaning a circular substrate, a base body that is relatively movable in the left-right direction with respect to the substrate is provided, the base body is configured to be rotatable with respect to the base body, and the back surface of the substrate is cleaned. The first cleaning unit and the first cleaning unit are provided independently, and a second cleaning unit for cleaning the bevel portion of the substrate is provided.
Further, when the second cleaning unit is positioned outside the periphery of the back surface of the substrate with the first cleaning unit pressed against the back surface of the substrate, the height of the upper end of the lower surface of the bevel portion of the substrate Is configured to be higher. Therefore, the first cleaning unit is rotated to clean the back surface of the substrate, and the second cleaning unit is brought into contact with the lower surface side bevel portion and the side surface of the substrate to rotate the substrate. The bevel portion and the side surface can be cleaned.

It is a perspective view which shows the washing | cleaning apparatus which concerns on embodiment of this invention. It is a vertical side view which shows a washing | cleaning apparatus. It is a top view which shows a washing | cleaning apparatus. It is a perspective view which shows the air knife provided in a washing | cleaning apparatus. It is a perspective view which shows the brush unit provided in the washing | cleaning tool. It is a top view of a brush unit It is sectional drawing of the II 'line of a brush unit. It is sectional drawing of the II-II 'line of a brush unit. It is sectional drawing of a peripheral side brush member. It is explanatory drawing explaining the shape of a peripheral side brush member. It is explanatory drawing explaining the effect | action of embodiment of this invention. It is explanatory drawing explaining the effect | action of embodiment of this invention. It is explanatory drawing explaining washing | cleaning of the center part area | region of a wafer. It is explanatory drawing explaining washing | cleaning of the center part area | region of a wafer. It is explanatory drawing explaining the effect | action of embodiment of this invention. It is explanatory drawing explaining the effect | action of embodiment of this invention. It is explanatory drawing explaining washing | cleaning of the peripheral part area | region of a wafer. It is explanatory drawing explaining washing | cleaning of the bevel part of a wafer. It is explanatory drawing explaining washing | cleaning of the bevel part of a wafer. It is explanatory drawing explaining washing | cleaning of the bevel part of the lower surface side of a wafer. It is explanatory drawing explaining washing | cleaning of the side surface of a wafer. It is a top view which shows a coating and developing apparatus. It is a perspective view which shows a coating and developing apparatus. It is a vertical side view which shows a coating and developing apparatus. It is sectional drawing which shows the other example of the brush part which concerns on embodiment of this invention. It is sectional drawing which shows washing | cleaning of the bevel part of the upper surface side of a wafer. It is sectional drawing which shows the further another example of the brush part which concerns on embodiment of this invention. It is sectional drawing which shows the further another example of the brush part which concerns on embodiment of this invention. It is sectional drawing which shows the further another example of the brush part which concerns on embodiment of this invention. It is a top view which shows the brush part which concerns on a comparative example. It is sectional drawing of the brush part which concerns on a comparative example. St. in the examples. It is a characteristic view which shows the removal rate of 1-3 particles. St. in the comparative example. It is a characteristic view which shows the removal rate of 1-3 particles.

  A cleaning apparatus installed in a coating and developing apparatus will be described as an example of a substrate cleaning apparatus (hereinafter referred to as a cleaning apparatus) according to an embodiment of the present invention. Although a specific example of a photolithography process including a cleaning process by a cleaning device will be described later, the cleaning device is installed in the vicinity of the exit of the coating and developing device, for example, a resist film is formed, and the back surface of the wafer (the lower surface is polished) ) And then sent out to the subsequent exposure apparatus. In this example, the wafer W has a diameter of 300 mm and a thickness of 0.75 mm. The height of the inclined portion on the upper surface side of the bevel portion of the wafer W and the inclined portion on the lower surface side of the bevel portion of the wafer W The height dimension of each is 0.175 mm. In the following description, the inclined portion on the upper surface side of the bevel portion of the wafer W and the inclined portion on the lower surface side of the bevel portion of the wafer W are defined as the bevel portion on the upper surface side of the wafer W and the bevel portion on the lower surface side of the wafer W, respectively. The side surface portion of the bevel portion of the wafer W will be described as the side surface of the wafer W.

First, a cleaning apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 is a perspective view of the cleaning apparatus 1, FIG. 2 is a longitudinal sectional view thereof, and FIG. 3 is a plan view thereof.
As shown in FIGS. 1 to 3, the cleaning apparatus 1 cleans the suction pad 2 that sucks and holds the wafer W substantially horizontally, the spin chuck 3 that sucks and holds the wafer W substantially horizontally, and the back surface of the wafer W. And a cleaning tool 5. The suction pad 2, the spin chuck 3 and the cleaning tool 5 are provided in a box-like under cup 43 whose upper surface is open. The under cup 43 is formed, for example, in a rectangular shape in plan view, and includes side walls facing each other. Of these, the direction in which the two side walls 43a and 43b facing each other on the front side and the back side extend in FIG. The direction in which the two side walls 43c and 43d perpendicular to the X direction and the X direction extend will be described as the Y direction.

  The suction pad 2 is configured to horizontally suck and hold a region that does not overlap the center portion on the back surface of the wafer W, and is movable in the horizontal direction (X direction). The cleaning device 1 includes two suction pads 2 that are spaced apart from each other in the Y direction, and each suction pad 2 is formed of, for example, an elongated block. The two suction pads 2 are configured so that the vicinity of the peripheral edge in the Y direction on the back surface of the wafer W can be supported and held substantially in parallel. The suction pad 2 is connected to a suction tube (not shown), and has a function as a vacuum chuck for sucking and holding the wafer W through the suction hole 2a shown in FIG. Each suction pad 2 is attached to a substantially central portion of an elongated rod-like pad support portion 21, and both end portions of the two pad support portions 21 are attached to two bridge girder portions 22, respectively, thereby the pad support portion 21. A well girder 20 comprising a bridge girder portion 22 is configured.

  Both ends of the two bridge girder portions 22 are fixed to two belts 23 stretched along the side walls 43a and 43b on the outer sides of the two opposite side walls 43a and 43b of the under cup 43, respectively. . Each belt 23 is wound around a pair of winding shafts 24, and each winding shaft 24 is attached to two side plates 26 installed in parallel with the two side walls 43a and 43b. . One of the winding shafts 24 is connected to a drive mechanism 25, and the bridge girder portion 22 is moved via the winding shaft 24 and the belt 23 so that the entire well beam 20 described above is moved in the X direction shown in FIGS. It is configured to move.

  Further, as shown in FIG. 1, each side plate 26 is supported at its bottom by a pair of elevating mechanisms 27 including a slider 27a and a guide rail 27b, and is fixed to the bottom of the casing of the cleaning apparatus 1 (not shown). These elevating mechanisms 27 are provided with a drive mechanism (not shown), and by raising and lowering the slider 27a within the guide rail 27b, the entire cross beam 20 can be raised and lowered in the Z direction (vertical direction) in the drawing. It can be done.

  Further, an annular upper cup 41 for striking the scattering of the cleaning liquid is straddled above the well beam 20. An opening 41 a having a larger diameter than the wafer W is provided on the upper surface of the upper cup 41, and a gap between the suction pad 2 or the spin chuck 3 and a coating / developing apparatus transport mechanism, which will be described later, is provided through the opening 41 a. Thus, the wafer W can be transferred. The upper cup 41 straddled on the cross beam 20 is integrated with the cross beam 20 and is configured to move in the X direction and the Z direction.

  Next, the spin chuck 3 will be described. The spin chuck 3 horizontally sucks and holds the central portion of the back surface of the wafer W, and is installed in the middle of the two suction pads 2 so that the suction pad 2 and the spin chuck 3 support a non-overlapping region on the wafer W. Is arranged. As shown in FIG. 2, the spin chuck 3 is connected to a drive mechanism 33 via a rotary lift shaft 3b. The spin chuck 3 is configured to be rotatable about a vertical axis by the drive mechanism 33 and can be lifted and lowered. It is configured.

  Further, three support pins 32 for delivering the wafer W are provided on the side of the spin chuck 3 at equal intervals in the circumferential direction of the wafer W, and the support pins 32 are configured to be movable up and down by an elevating mechanism 32a. ing. The wafer W can be transferred from the transfer mechanism to the suction pad 2 and from the spin chuck 3 to the transfer mechanism by the cooperative action of the elevating pins 32 and the external transfer mechanism.

  Further, as shown in FIGS. 3 and 4, an air knife 31 is installed around the spin chuck 3 and the support pin 32 so as to surround these devices. The air knife 31 is formed of, for example, a cylindrical enclosing member, and a gas injection port 31a is formed along the circumferential direction at the upper end of the air knife 31. The injection port 31a jets a gas such as compressed air toward the back surface of the wafer W. It is configured. For example, the air knife 31 is composed of a double cylinder, and gas supplied from a supply unit (not shown) can be supplied to the injection port 31a through a hollow part between the double cylinders. The air knife 31 is used when the wafer W is transferred to the spin chuck 3 in order to bring the surface of the spin chuck 3 and the back surface (second region) of the substrate supported by the spin chuck 3 into contact with each other in a dry state. In addition, the cleaning liquid on the back surface of the wafer W is blown off to the outside of the cylinder to be dried.

  Here, the height position of the wafer W will be described. As will be described later, the wafer W is transferred from the external transfer mechanism to the suction pad 2 and moved to the right (X direction) shown in FIG. The area is cleaned. FIG. 2 shows a state in which the height position of the wafer W is at the cleaning position. In this cleaning position, the back surface of the wafer W is positioned above the tip of the air knife 31 and the wafer W is held by the suction pad 2. The wafer W is prevented from interfering with the air knife 31 when moving in the X direction in the above state.

The cleaning tool 5 for cleaning the back surface and the bevel portion of the wafer W will be described. As shown in FIG. 1 to FIG. 3, the cleaning tool 5 is provided on the base 51, which is configured to be movable by a moving mechanism described later, and for cleaning the back surface and the bevel of the wafer W. A brush unit 50 is provided.
The brush unit 50 will be described with reference to FIGS. 5 is a perspective view of the brush unit 50, FIG. 6 is a plan view of the brush unit 50, and FIGS. 7 and 8 are taken along lines II ′ and II-II ′ shown in FIG. FIG. As shown in FIGS. 2 and 5 to 8, the brush unit 50 includes a lower surface side brush portion 60 that is a first cleaning portion for cleaning the back surface of the wafer W and an X direction when viewed from the lower surface side brush portion 60. The peripheral brush portion 70 is provided on the side opposite to the lower surface brush portion 60 on the side opposite to the spin chuck 3 and is a second brush portion for cleaning the bevel portion of the wafer W.

  The lower surface side brush part 60 includes a lower surface side brush 61 made of a disc-shaped polyvinyl alcohol (PVA) sponge having a diameter of 65 mm, and a disk-shaped support plate 62 that supports the lower surface side brush 61 from the lower surface side. It has. As shown in FIGS. 5 and 6, the lower surface side brush 61 in the lower surface side brush portion 60 passes through the center of the lower surface side brush portion 60 and crosses the lower surface side brush 61 in the thickness direction. Is formed. Further, drainage ports 64 are respectively formed at positions of the support plate 62 facing the hole 63 at the end of the cross-shaped hole 63. As shown in FIG. 7, the center of the lower surface of the support plate 62 is connected to a rotation mechanism 66 provided on the base 51 via a rotation shaft 65, and the lower brush portion 60 rotates around the vertical axis. Is configured to do.

  As shown in FIGS. 2, 3, and 5 to 8, the peripheral brush portion 70 is formed in an annular shape surrounding the periphery of the support plate 62 and a bevel brush 71 made of rectangular polyvinyl alcohol (PVA). The bevel brush 71 is fixed to the upper surface of the support plate 72 so as to extend in the Y direction on the side opposite to the spin chuck 3 when viewed from the lower surface side brush portion 60. ing. As will be described later, when cleaning the back surface of the wafer W, the top surface of the bevel brush 71 is pressed against the back surface of the wafer W, so the bevel brush 71 cleans the back surface of the wafer W. It can be said that it constitutes a part of the brush.

  As shown in FIGS. 7 and 8, a cylindrical member 73 is provided around the periphery of the rotation mechanism 66 and the rotation shaft 65 so as to extend upward from the base portion 51 so as not to prevent the rotation of the rotation shaft 65. . As shown in FIGS. 6 and 7, two beam portions 74 each extending toward the side are provided at the upper end portion of the cylindrical member 73, and the support plate 72 is formed by the two beam portions 74. Between the support plate 72 and the lower surface side brush part 60, it supports so that rotation of the lower surface side brush part 60 may not be prevented through a very slight clearance.

  As shown in FIG. 9, the bevel brush 71 has a height H of 1 mm and is provided so that its upper end is located above the upper surface of the back surface brush 61. Furthermore, as shown in FIG. 6, when viewed from above, both ends in the Y direction are curved toward the lower surface brush portion 60 side. The curvature in the Y direction is set so that the curvature radius is longer than the curvature radius (R150 mm) of the periphery of the wafer W as shown in FIG. Further, the lower portion of the bevel brush 71 is an inclined portion 71A in which the surface on the lower surface side brush portion 60 side is inclined so as to be separated from the lower surface side brush portion 60 from the lower side to the upper side. The portion is a vertical portion 71B in which the surface on the lower surface side brush portion 60 side is a vertical surface. The vertical portion 71B has a thickness d from the inner surface to the outer surface of 5 mm, and the inclined portion 71A has a height h of 200 μm or more, for example, 400 μm. The inclination angle θ of the inclined portion 71A is set in the range of 10 ° to 14 °, for example, 12 °. The inclined portion 71A corresponds to the lower surface side bevel cleaning portion, and the vertical portion 71B corresponds to the side surface cleaning portion.

  As shown in FIGS. 1 to 3, the pedestal 51 is provided at the tip of a support arm 52 arranged so as not to interfere with the wafer W or the bridge girder 2, for example. The support arm 52 extends horizontally from the base 51 in the X direction, opposite to the spin chuck 3, and the base end side of the support arm 52 is bent upward so that the right side of FIG. It is connected to a drive mechanism 53 provided on the upper side of the side wall 43c. The drive mechanism 53 is configured to move the support arm 52 horizontally in the X direction, and is configured to move the support arm 52 up and down. The drive mechanism 53 is fixed to a belt 54 arranged to extend in the Y direction, and the belt 54 is stretched in the Y direction by a drive roller 55 and a driven roller 56 to drive the drive roller 55. Thus, the belt rotates and the drive mechanism 53 and the support arm 52 are configured to move in the Y direction. By driving the drive mechanism 53, the belt 54, the drive roller 55, and the driven roller 56, the brush unit 50 is configured to be movable up and down, and movable in the X direction and the Y direction, respectively.

  Further, as shown in FIG. 3, a cleaning liquid nozzle 57 that supplies a cleaning liquid such as pure water toward the back surface of the wafer W and a dry gas such as clean air toward the back surface of the wafer W as shown in FIG. A blow nozzle 58 for supplying is provided. The cleaning liquid nozzle 57 and the blow nozzle 58 are connected to a cleaning liquid supply unit and a blow gas supply unit (not shown), respectively, and are configured to discharge the cleaning liquid and the blow gas toward the back surface of the wafer W, respectively.

  Further, as shown in FIG. 2, at the bottom of the under cup 43, there are a drain pipe 16 for discharging the cleaning liquid accumulated in the under cup 43, and two exhaust pipes 15 for exhausting the airflow in the cleaning apparatus 1. Is provided. The exhaust pipe 15 is provided to prevent the cleaning liquid accumulated at the bottom of the under cup 43 from flowing into the exhaust pipe 15 and extends upward from the bottom surface of the under cup 43. Further, the upper part of the exhaust pipe 15 is covered with an inner cup 42 that forms a ring-shaped cover attached around the air knife 31 so that the cleaning liquid dripping from above does not directly enter the exhaust pipe 15. 2 is a blow nozzle for assisting in drying the remaining cleaning liquid by blowing compressed air or the like near the outer periphery of the wafer W from above after the cleaning of the wafer W, and 14 is provided in the cleaning tool 5. The cleaning liquid nozzle 57 supplies the cleaning liquid to the back surface of the wafer W together with the cleaning liquid nozzle 57. The blow nozzle 13 includes an elevating mechanism (not shown), and retracts upward so as not to interfere with the wafer W being transferred and the transfer mechanism when the wafer W is loaded / unloaded.

  A lamp box 11 containing the UV lamp 12 is attached to a side wall 43d of the undercup 43 that faces the side wall 43c. Then, the wafer W is configured to pass above the UV lamp 12 when the wafer W to be processed is carried into and out of the cleaning apparatus 1. The UV lamp 12 irradiates the back surface of the wafer W, which has been washed out, with ultraviolet light, and shrinks the particles remaining on the back surface of the wafer W.

  Each drive mechanism, a pressure adjusting unit (not shown) provided in the UV lamp 12 and the exhaust pipe 15 and the like are controlled by a control unit 100 that controls the operation of the entire coating and developing apparatus. The control unit 100 includes, for example, a computer having a program storage unit (not shown). In the program storage unit, the wafer W received from an external transfer device is transferred between the suction pad 2 and the spin chuck 3, or by the cleaning tool 5. A computer program having a group of steps (commands) for operations such as cleaning is stored. Then, when the computer program is read by the control unit 100, the control unit 100 controls the operation of the cleaning apparatus 1. The computer program is stored in the program storage unit while being stored in a storage mechanism such as a hard disk, a compact disk, a magnetic optical disk, or a memory card.

  An operation for cleaning the back surface of the wafer W will be described based on the configuration described above. In FIGS. 11 to 21, for convenience of illustration, descriptions of the inner cup 42, the exhaust pipe 15, the UV lamp 12, the blow nozzle 13, and the like are omitted as appropriate.

  First, in a state where the brush unit 50 is in a standby state below the cleaning position of the wafer W, the wafer W that has been subjected to the polishing process on the back surface of the wafer W by, for example, an external transfer mechanism (transfer arm F3 to be described later) is cleaned. It is carried in and stops above the opening 41 a of the upper cup 41. The thickness of the wafer W after the back surface polishing process is approximately 0.75 mm.

  The support pin 32 rises from below the spin chuck 3 and stands by below the transport mechanism. Next, the transfer mechanism descends from above the support pins 32, transfers the wafer W to the support pins 32, and moves out of the cleaning apparatus 1. At this time, the suction pad 2 stands by at a position where the surface holding the wafer W is higher than the upper surface of the brush unit 50, and the spin chuck 3 stands by at a position lower than the upper surface of the brush unit 50. When the support pins 32 are further lowered, the wafer W is first placed on the suction pad 2 and sucked and held by the suction pad 2 as shown in FIG.

Next, the brush unit 50 is moved to the cleaning position in the central region on the back surface of the wafer W. Further, as shown in FIG. 12, the suction pad 2 is moved in a range determined in the X direction, the wafer W is moved in the X direction, the support arm 52 is moved in the Y direction, and the brush portion is moved in the Y direction. The wafer W and the brush unit 50 are relatively moved in the horizontal direction, and the brush unit 50 is relatively moved to a position aligned with the cleaning start position on the back surface of the wafer W.
Further, the brush unit 50 is raised, and the surface of the lower surface side brush portion 60 is pressed against the back surface of the wafer W as shown in FIG. At this time, the peripheral brush portion 70 is in a state where the upper surface is in contact with the rear surface of the wafer W and is crushed downward.

  Next, the air knife 31 is operated to prevent the cleaning liquid from flowing around and adhering to the surface of the spin chuck 3, and while the brush unit 50 is pressed against the back surface of the wafer W, the cleaning liquid nozzles 14 and 57 are used to While supplying the cleaning liquid toward the back surface, the lower surface side brush unit 60 is rotated around the vertical axis. At this time, gas is ejected from the outlet 31a of the air knife 31 toward the back surface of the wafer W, and the cleaning liquid is blown off toward the outside of the air knife 31, so that the back surface of the wafer W facing the air knife 31 is kept dry. ing. With such a configuration, it is possible to prevent the cleaning liquid covering the back surface of the wafer W from entering the inside of the air knife 31.

  Further, the suction pad 2 and the support arm 52 are moved, the wafer W and the brush unit 50 are relatively moved in the horizontal direction, and the brush unit 50 is moved in the X direction while being repeatedly moved in the Y direction. Then, a rectangular area Z1 in the vicinity of the center of the wafer W indicated by the oblique lines in FIG.

  At this time, since the cleaning liquid is supplied toward the back surface of the wafer W, the entire back surface except for the region facing the air knife 31 on the wafer W is covered with a liquid film of the cleaning liquid, and the rotating brush portion is pressed against it. As a result, particles adhering to the back surface of the wafer W are peeled off and captured by the cleaning liquid. The cleaning liquid flows below the brush unit 50 through the hole 63 and the drain port 64 of the lower surface side brush section 60, or flows down along the back surface of the wafer W and flows into the under cup 43. As a result, the brush unit 50 is moved, and the particles in the rectangular area Z1 near the center of the wafer W indicated by the oblique line 14 in the figure are washed away. Since the cleaning liquid is blown out of the air knife 31 by the gas discharged from the air knife 31 as described above, the surface of the spin chuck 3 is always maintained in a dry state, and contamination and watermark formation by the processed cleaning liquid are caused. Is prevented.

  Then, after the cleaning of the rectangular area Z1 indicated by the oblique lines in FIG. 14, the supply of the cleaning liquid is stopped, the rotation of the lower surface side brush unit 60 is stopped, and the brush unit 50 is lowered to the standby position. Next, as shown in FIG. 15, the suction pad 2 is moved while the air knife 31 is operated, so that the center of the spin chuck 3 and the center of the wafer W are aligned. Further, the suction of the wafer W by the suction pad 2 is released, the spin chuck 3 in the standby position is raised to the height position of the cleaning position to support the back surface of the wafer W, and then the suction pad 2 is retracted downward.

  Subsequently, a region (peripheral region) other than the central portion of the wafer W is cleaned. Specifically, as shown in FIG. 16, the brush unit 50 is relatively moved to the cleaning start position in the peripheral area of the wafer W, and then the brush unit 50 is lifted to lower the lower surface side brush part 60 and the peripheral side. The brush unit 70 is pressed against the back surface of the wafer W. Then, supply of the cleaning liquid is started toward the back surface of the wafer W, and the lower surface side brush unit 60 is rotated. Further, while rotating the wafer W around the vertical axis, the brush unit 50 is moved relative to the wafer W toward the peripheral edge in the radial direction of the wafer W. By moving the brush unit 50 relatively from the center side of the wafer W toward the peripheral edge while rotating the wafer W in this way, the region where the brush unit 50 is in contact with the wafer W has a concentric locus. The back surface of the wafer W is moved while drawing. Thus, the peripheral edge region Z2 of the wafer W shown in 17 can be evenly cleaned.

Further, in cleaning the peripheral edge region Z2, when the brush unit 50 is relatively moved to the peripheral edge of the wafer W, the peripheral brush portion 70 is moved from below the wafer W as shown in FIGS. It protrudes outside W. When the peripheral brush portion 70 is positioned below the wafer W, the peripheral brush portion 70 is pressed against the wafer W and crushed. However, the peripheral brush portion 70 is crushed by the wafer W by protruding outside the wafer W. Stand up without being lost.
Subsequently, the brush unit 50 is moved to the center side of the wafer W in the X direction. At this time, the inclined portion 71A of the bevel brush is pressed against the bevel portion on the lower surface side of the wafer W from the side as shown in FIG. Then, the wafer W rotates while supplying the cleaning liquid in the state shown in FIG. 20, whereby the bevel portion on the lower surface side of the wafer W is cleaned by the peripheral brush portion 70.

  Subsequently, when the brush unit 50 is further moved toward the center of the X-direction wafer W, the peripheral brush portion 70 is further pressed against the wafer W, and the side surface of the vertical portion 71B of the second brush is the wafer as shown in FIG. Pressed against the side of W. Then, when the wafer W rotates in the state shown in FIG. 21, the side surface of the wafer W is cleaned by the peripheral brush part 70.

  When the cleaning of the entire back surface of the wafer W is thus completed, the rotation of the lower surface side brush unit 60 is stopped, the brush unit 50 is lowered, the supply of the cleaning liquid is stopped, and the operation of the cleaning liquid is shaken and dried. The shake-off drying is performed by rotating the spin chuck 3 at a high speed to shake off the cleaning liquid adhering to the back surface of the wafer W. As described above, the wafer W that has been uniformly wetted is shaken off and dried at once, thereby suppressing the generation of watermarks. At this time, the blow nozzle 13 evacuated upward is lowered, and at the same time, the blow nozzle 58 is moved so as to be positioned at the peripheral portion of the wafer W, and gas is blown from the upper surface and the lower surface of the peripheral portion of the wafer W, Shaking off drying is promoted.

  Further, after the cleaning and drying of the entire back surface of the wafer W are completed, the wafer W is transferred to the transport mechanism and unloaded by an operation reverse to that at the time of loading. At this time, the UV lamp 12 is turned on to irradiate ultraviolet rays from below the transfer mechanism toward the back surface of the wafer W. As a result, even if particles are attached, for example, organic substances are decomposed by irradiation with ultraviolet rays, so that such types of particles can be contracted to reduce the influence of defocusing and the like. .

  According to the above-described embodiment, in the cleaning apparatus for cleaning the back surface of the wafer W, the lower surface side brush portion 60 rotating around the vertical axis and the wafer W held on the spin chuck 3 in the lower surface side brush portion 60 are opposite to each other. The peripheral brush portion 70 is provided at the side position so as to be independent of the lower surface brush portion 60. Further, when the peripheral brush portion 70 is positioned outside the outer periphery of the wafer W in a state where the lower brush portion 60 is pressed against the back surface of the wafer W, the upper edge of the bevel portion on the lower surface side of the wafer W is positioned. It is configured to be higher than the height. Further, an inclined surface higher than the height of the bevel portion on the lower surface side of the wafer is provided at a lower portion of the peripheral brush portion 70, and a vertical surface is provided above the inclined surface. Then, while rotating the lower surface side brush portion 60, the lower surface of the wafer W is brought into contact with the rear surface of the wafer W to clean the rear surface of the wafer W, the inclined surface of the peripheral edge side brush portion 70 is brought into contact with the bevel portion of the wafer W, The wafer W is rotated while being in contact with the side surface of the wafer W to clean the bevel portion and the side surface of the wafer W. Thereby, the particles adhering to the bevel portion and the side surface of the wafer W can also be efficiently removed.

In the present invention, the inclination angle of the inclined portion 71A in the peripheral brush portion 70 is set to 10 to 14 °. When the inclination angle is too small or too large, when the contact portion between the peripheral brush portion 70 and the wafer W is viewed in the radial cross section of the wafer W, the inclined portion 71A of the peripheral brush portion 70 is There is a possibility that a portion that contacts only a part of the bevel portion and does not contact the bevel portion may occur. Therefore, the inclined portion 71A on the lower side of the wafer W can be reliably brought into contact with the bevel portion by setting the inclination angle of the inclined portion 71A in the peripheral brush portion 70 to 10 to 14 °.
Further, by making the curvature radius in the Y direction of the surface on the lower surface side brush portion 60 side of the peripheral brush portion 70 longer than the curvature radius of the peripheral edge of the wafer W to be cleaned, it is wider near the center of the lower surface brush portion 60. The region can be in contact with the periphery of the wafer.

  22 to 24 show an example of a coating and developing device in which the cleaning device 1 is incorporated. 22, 23, and 24 are a plan view, a perspective view, and a schematic longitudinal side view of the coating and developing apparatus, respectively. This coating and developing apparatus is configured by linearly connecting a carrier block D1, a processing block D2, and an interface block D3. An exposure device D4 is further connected to the interface block D3. In the following description, the arrangement direction of the blocks D1 to D3 is the front-rear direction. The carrier block D1 has a role of applying a carrier C including a plurality of wafers W, which are substrates of the same lot, and loading / unloading the carrier C into / from the developing device. The carrier block D1, the opening / closing unit 92, and the opening / closing unit And a transfer mechanism 93 for transporting the wafer W from the carrier C via 92.

  The processing block D2 is configured by laminating first to sixth unit blocks B1 to B6 for performing liquid processing on the wafer W in order from the bottom. For convenience of explanation, “BCT” is a process for forming a lower antireflection film on the wafer W, “COT” is a process for forming a resist film on the wafer W, and a process for forming a resist pattern on the exposed wafer W is performed. Sometimes expressed as “DEV”. In this example, two BCT layers, COT layers, and DEV layers are stacked from the bottom as shown in FIG. 23, and the wafer W is transferred and processed in parallel in the same unit block.

  Here, as a representative of the unit blocks, the COT layer E3 will be described with reference to FIG. A plurality of shelf units U are arranged in the front-rear direction on the left and right sides of the transfer area 94 from the carrier block D1 to the interface block D3, and the other side is a resist film forming module COT and a protective film forming module, which are liquid processing modules, respectively. ITCs are provided side by side in the front-rear direction. The resist film forming module COT supplies a resist to the wafer W to form a resist film. The protective film forming module ITC supplies a predetermined processing liquid onto the resist film and forms a protective film for protecting the resist film. The shelf unit U includes a heating module, a back surface polishing module 10 for the wafer W, and a cleaning device 1. The cleaning device 1 is disposed on the interface block D3 side, for example. In the transfer area 94, a transfer arm F3 which is a transfer mechanism of the wafer W is provided.

  The other unit blocks E1, E2, E5 and E6 are configured in the same manner as the unit blocks E3 and E4 except that the chemicals supplied to the wafer W are different. The unit blocks E1 and E2 include an antireflection film forming module instead of the resist film forming module COT, and the unit blocks E5 and E6 include a developing module. In FIG. 23, the transfer arms of the unit blocks E1 to E6 are shown as F1 to F6.

  On the carrier block D1 side in the processing block D2, a tower T1 extending vertically across the unit blocks E1 to E6 and a transfer arm 95 that can be moved up and down for transferring the wafer W to the tower T1 are provided. ing. The tower T1 is composed of a plurality of modules stacked on each other, and the module provided at each height of the unit blocks E1 to E6 is a wafer between the transfer arms F1 to F6 of the unit blocks E1 to E6. W can be handed over. These modules include a delivery module TRS, a temperature control module CPL that adjusts the temperature of the wafer W, a buffer module that temporarily stores a plurality of wafers W, and a hydrophobization module that hydrophobizes the surface of the wafer W. It is included.

  The interface block D3 includes towers T2, T3, and T4 that extend vertically across the unit blocks E1 to E6. The wafers W are transferred to and from the tower T2 and the tower T3 by an interface arm 96 that can be raised and lowered, and an interface arm 97 that can be raised and lowered to the tower T2 and the tower T4, respectively. In addition, an interface arm 98 for transferring the wafer W between the tower T2 and the exposure apparatus D4 is provided.

  The tower T2 includes a delivery module TRS, a buffer module that stores a plurality of wafers W before exposure processing, a buffer module that stores a plurality of wafers W after exposure processing, and a temperature control module that adjusts the temperature of the wafers W Etc. are stacked on each other. The modules are also provided in the towers T3 and T4, respectively, but description thereof is omitted here.

  A transport path of the wafer W in the system including the coating / developing apparatus and the exposure apparatus D4 will be described. The wafer W is unloaded from the carrier C for each lot. That is, it is set so that the wafers W of the other lot are unloaded from the carrier C after all the wafers W of one lot are paid out. Further, before the wafer C is paid out, the transfer path of each wafer W is set in advance, and is transferred to a preset unit block among the duplicated unit blocks as described above.

The wafer W is transferred from the carrier C by the transfer mechanism 93 to the transfer module TRS0 of the tower T1 in the processing block D2. The wafer W is transferred from the delivery module TRS0 to the unit blocks E1 and E2 and transferred.
For example, when the wafer W is transferred to the unit block E1, among the transfer modules TRS of the tower T1, the transfer module TRS1 corresponding to the unit block E1 (the transfer module capable of transferring the wafer W by the transfer arm F1). The wafer W is transferred from the TRS0. When the wafer W is transferred to the unit block E2, the wafer W is transferred from the TRS0 to the transfer module TRS2 corresponding to the unit block E2 among the transfer modules TRS of the tower T1. Delivery of these wafers W is performed by a delivery arm 95.

The wafer W thus distributed is transported in the order of TRS1 (TRS2) → antireflection film forming module → heating module → TRS1 (TRS2), and then the transfer module TRS3 corresponding to the unit block E3 by the transfer arm 95; It is distributed to the delivery module TRS4 corresponding to the unit block E4.
The wafer W distributed to TRS3 and TRS4 is TRS3 (TRS4) → resist film forming module COT → heating module → protective film forming module ITC → heating module → back surface polishing module 10 → cleaning apparatus 1 → tower T2 delivery module TRS. It is conveyed in the order. The wafer W transferred to the delivery module TRS is carried into the exposure apparatus D4 through the tower T3 by the interface arms 96 and 98. The exposed wafer W is transferred between the towers T2 and T4 by the interface arm 97 and transferred to the transfer modules TRS5 and TRS6 of the tower T2 corresponding to the unit blocks E5 and E6, respectively. Thereafter, after being transferred to the heating module → the developing module → the heating module → the transfer module TRS of the tower T <b> 1, it is returned to the carrier C through the transfer mechanism 93.

  As described above, the cleaning device 1 is provided, for example, in the shelf unit U of the unit blocks E3 and E4. However, in the coating and developing device, the place where the cleaning device 1 is provided may be the tower T2 of the interface block D3. In this case, for example, the wafer W on which a resist film and a protective film are formed is transferred to the interface block D3, where the cleaning process is performed, and then transferred to the exposure apparatus D4.

  Next, another example of the cleaning tool according to the embodiment of the present invention will be described. For example, as shown in FIG. 25, the surface on the lower surface side brush portion 60 side of the upper portion of the vertical portion 71B in the peripheral side brush portion 70. A beam protruding portion 71C that is inclined so as to approach the lower surface side brush portion 60 side from below to above is provided. Furthermore, when the lower surface side brush 71C is arranged so that the lower surface side brush is pressed against the lower surface of the wafer W and the peripheral edge brush portion 70 rises, the height position of the exposed surface portion 71C is the upper surface side in the bevel portion of the wafer W. It arrange | positions so that it may become a height position including the height position from the upper end of a sloping part to a lower end.

  With this configuration, when the vertical portion 71B of the peripheral brush portion 70 is applied to the side surface of the wafer W as shown in FIG. 26, the inclined surface of the beam projecting portion 71C is placed on the bevel portion on the upper surface side of the wafer W. Can be pressed. Therefore, when the wafer W is rotated in the state of FIG. 26, the side surface of the wafer W is cleaned by the vertical portion 71B of the peripheral brush portion 70, and the bevel portion on the upper surface side of the wafer W is cleaned by the beam protruding portion 71C. can do.

  Further, depending on the wafer W, there is a request not to supply the cleaning liquid to the upper surface side of the wafer W. In such a case, it is preferable to clean only the lower region of the bevel portion of the wafer W. As a cleaning tool for accurately and limitedly cleaning such a determined portion close to the lower side, for example, the surface on the lower surface side brush portion 60 side of the peripheral brush portion 70 is configured to have a plurality of steps, The surface on the lower surface side brush part 60 side in each step may be an inclined surface.

For example, as shown in FIG. 27, the surface of the first brush side 60 of the peripheral brush member 80 is composed of three stepped portions 81A to 81C, and the first brush side surfaces of the stepped portions 81A to 81C are respectively provided. An inclined surface. At this time, the height of each of the step portions 81 </ b> A to 81 </ b> C is set according to the height of the washable area of the wafer W.
Here, for example, when the brush unit 50 is pressed against the periphery of the wafer W, the brush unit 50 may be displaced in the horizontal direction with respect to the wafer W position. In such a case, if the surface on the lower surface side brush portion 60 side of the peripheral side brush member 80 is all inclined, for example, the peripheral side brush member 80 is pushed on the side surface of the wafer W due to displacement in the horizontal position. The height hA of the applied area will be different.

  On the other hand, in the configuration in which the step portions 81A to 81C are provided, the peripheral edge E of the wafer W is, for example, even when the pressing position of the brush unit 50 with respect to the wafer W is shifted in the horizontal direction. In the range located above the horizontal portion of the stepped portion 81A, that is, in the range of A to B in FIG. 27, the height hA of the region where the second brush 80 is pressed on the side surface of the wafer W is constant. Therefore, a deviation in height at which the second brush 80 comes into contact with the wafer W due to a positional deviation in the horizontal direction is reduced. Accordingly, it is possible to clean the surface of the wafer W with a limited and limited range of height on the lower side.

  Furthermore, the inclined surface of the peripheral brush member may be divided into a plurality of regions for each height, and the inclination angle may be gradually increased in order from the lower partition. For example, as shown in FIG. 28, when the peripheral brush member 82 is viewed in the radial cross section of the wafer W, the inclination angles θ1 to θ3 in the sections 83A to 83C are gradually increased in the order of θ1 to θ3. You may comprise. Or you may comprise so that an inclination angle may become small gradually in an order from the division below. With this configuration, the horizontal position of the brush unit 50 can be adjusted based on the angle of the bevel portion of the wafer W, and the angle of the inclined surface that contacts the bevel portion can be adjusted. Thus, the bevel portion can be brought into contact with the inclined surface in a parallel state, so that the inclined surface can be reliably brought into contact with a wide range of the bevel portion, and particles can be efficiently removed.

  Moreover, you may comprise this invention so that the peripheral brush member in a cleaning tool can be raised / lowered. For example, as shown in FIG. 29, an elevating mechanism 75 is provided below the support plate 72 so that the elevating mechanism 75 is supported by the beam portion 74, and the peripheral side brush portion 70 is raised and lowered with respect to the lower surface side brush portion 60. What is necessary is just to comprise so. By comprising in this way, the contact pressure to the bevel part of the wafer W of the inclined surface of the peripheral side brush part 70 can be adjusted.

  Further, as described above, when cleaning the bevel portion, the upper edge of the peripheral brush portion 70 is positioned higher than the upper surface of the lower brush so that the region close to the surface on the side surface of the wafer W can be cleaned. Yes. Therefore, when cleaning the back surface of the wafer W, when the brush unit 50 is pressed against the back surface of the wafer W, the wafer in the peripheral brush portion 70 is pressed more than the pressure pressed against the back surface of the wafer W in the lower surface brush portion 60. The pressure squeezed on the back surface of W becomes strong. Therefore, when the lower surface side brush unit 60 is pressed against the wafer W with a pressure sufficient to clean the back surface of the wafer W, the pressure applied to the peripheral side brush unit 70 increases, and the wafer is pressed while pressing the brush unit 50. Is rotated, the upper surface of the peripheral brush portion 70 is more easily worn than the upper surface of the lower brush portion 60.

  Therefore, when the back surface of the wafer W is cleaned by providing an elevating mechanism 75 that raises and lowers the peripheral brush portion 70, the peripheral brush portion 70 is arranged so that the upper surface of the bevel brush 71 is higher than the upper surface of the lower surface brush 61. May be lowered to a lower position. Further, when cleaning the bevel of the wafer W, the peripheral side brush portion 70 may be raised to a position where the upper surface of the bevel brush 71 is higher than the height position of the upper surface of the lower surface side brush 61. . By comprising in this way, abrasion of the peripheral side brush part 70 can be suppressed.

  The cleaning apparatus of the present invention may also serve as a back surface polishing module that polishes the back surface. As such an example, for example, a configuration in which a polishing pad configured to be horizontally and vertically movable is provided below the wafer W held by the suction pad 2 and the spin chuck 3 can be cited. For example, in such a cleaning apparatus, the back surface of the wafer W may be polished in the same manner as the cleaning method using a polishing pad instead of the brush unit 50 before executing the cleaning method described in the embodiment. Thereafter, the polishing pad may be retracted and the cleaning method may be executed.

  In order to verify the effect of the embodiment of the present invention, as an example, the cleaning process including the brush unit 50 including the peripheral brush portion 70 illustrated in FIG. 25 is used for the cleaning process illustrated in the embodiment. Then, the wafer W after the polishing process was cleaned. As a comparative example, a wafer unit 500 as shown in FIGS. 30 and 31 was used, and the wafer W was cleaned in the same manner as in the example.

  A brush unit 500 shown in FIG. 30 includes a lower surface brush portion 60, and an annular peripheral brush member 501 that surrounds the lower surface brush portion 60 is provided. The peripheral brush member 501 has an inclined surface whose inner peripheral surface is inclined toward the lower surface brush portion 60 as shown in FIG. 31 when viewed in the radial cross section of the brush unit 500. This brush unit 500 is configured such that the lower surface side brush portion 60 and the peripheral edge side brush member 501 rotate integrally around a vertical axis. When cleaning the bevel portion of the wafer W, the peripheral brush member 501 is protruded outside the wafer W. As a result, the portion of the peripheral brush member 501 that protrudes outside the wafer W tends to rise, so that the inner surface of the peripheral brush member 501 contacts the bevel portion of the wafer W. In this state, by rotating the wafer W and further rotating the brush unit 500, particles attached to the bevel portion are removed.

  In each of the example and the comparative example, the bevel portion on the upper surface side of the wafer W at the periphery of the wafer W is set to St. 1. The side surface of the wafer W is set to St. 2. The bevel part on the lower surface side of the wafer is designated as St3. 1-St. The number of particles before the cleaning process at three points 3 and the number of particles after the cleaning process were measured.

FIG. 32 shows particle removal rates at three points in the example (particle removal rate = (number of particles before cleaning process−number of particles after cleaning process) / number of particles before cleaning process). The particle removal rates at three points in the comparative example are shown.
As shown in FIG. 32, in the embodiment, St. 3 is a high particle removal rate of 90% or more. 1 and St. Each of 3 also showed a high particle removal rate of about 80%.
As shown in FIG. 33, in the comparative example, St. 3, the removal rate close to 100% was achieved. 2 removal rate is about 30%. The particle removal rate at 1 was about 15%.
According to this result, it can be said that particles can be efficiently removed over a wide range of the bevel portion by using the brush unit 50 of the present invention.

DESCRIPTION OF SYMBOLS 1 Cleaning apparatus 2 Suction pad 3 Spin chuck 5 Cleaning mechanism 33 Rotating mechanism 50 Brush part 60 Lower surface side brush part 66 Rotating mechanism 70 Peripheral side brush member 71A Inclined part 71B Vertical part 71C Beam projecting part

Claims (15)

A base body that is movable in the left-right direction relative to a substrate that is a semiconductor wafer held by a rotatable substrate holding unit;
A first cleaning section that is rotatably provided on the base body and that cleans the lower surface that is the back surface of the substrate;
A second cleaning unit provided on the base body independently of the first cleaning unit, for cleaning the bevel portion of the substrate,
When the first cleaning unit is positioned outside the outer periphery of the substrate in a state where the first cleaning unit is pressed against the back surface of the substrate, the second cleaning unit is arranged at the upper end of the inclined portion on the lower surface side of the bevel portion of the substrate. A cleaning tool characterized by being configured to have a height higher than the height.   The surface of the second cleaning unit, which is in contact with the substrate when viewed from above, is formed in an arc shape having a smaller curvature than the outer periphery of the substrate or formed in a straight line. Item 10. A cleaning tool according to Item 1.   The said 2nd washing | cleaning part is provided with the inclined surface which inclines so that it may leave | separate from the rotation center of a 1st washing | cleaning part as it goes upwards, The cleaning tool of Claim 1 or 2 characterized by the above-mentioned.   4. The cleaning tool according to claim 3, wherein the second cleaning unit is configured to be able to clean the side surface of the bevel portion in addition to the inclined portion on the lower surface side of the bevel portion of the substrate. .   The cleaning tool according to claim 3 or 4, wherein an inclination angle of the inclined surface is 10 to 14 °.   6. The tilt angle of a surface on the first cleaning unit side in a portion above the inclined surface in the second cleaning unit is larger than an inclination angle of the inclined surface. The cleaning tool according to one item.   The cleaning tool according to any one of claims 3 to 5, wherein a surface on the first cleaning unit side in a portion above the inclined surface in the second cleaning unit is a vertical surface.   The second cleaning unit includes a plurality of stepped portions on a surface on the first cleaning unit side, and a surface on the first cleaning unit side below the stepped portion on the lowest level side is the inclined surface. The cleaning tool according to any one of claims 3 to 7, wherein:   The second cleaning unit is configured such that the upper end of the inclined portion on the upper surface side of the bevel portion of the substrate when the first cleaning unit is positioned outside the outer periphery of the substrate with the first cleaning unit being pressed against the back surface of the substrate. An upper inclined surface that is inclined so as to approach the rotation center of the first cleaning section as it goes upward is provided at a height position that includes a range from the height of the first to the lower end. The cleaning tool according to any one of 8.   The cleaning tool according to any one of claims 1 to 9, further comprising an elevating mechanism that elevates and lowers the second cleaning unit relative to the first cleaning unit. A cleaning tool according to any one of claims 1 to 10,
A substrate cleaning apparatus comprising: a substrate holding portion that holds a back surface center portion of a circular substrate and rotates around a vertical axis.   The substrate holding unit horizontally holds the central portion of the back surface of the substrate, holds the spin chuck that rotates around the vertical axis, and horizontally holds the region off the central portion of the back surface of the substrate, and can move in the horizontal direction. The substrate cleaning apparatus according to claim 11, further comprising a holding unit. In a substrate cleaning method for cleaning the back surface of a circular substrate,
Using the substrate cleaning apparatus according to claim 11 or 12,
Rotating the first cleaning unit around a vertical axis in a state where the first cleaning unit is in contact with the lower surface of the substrate held by the substrate holding unit;
Cleaning the lower surface side bevel portion of the substrate by rotating the substrate in a state where the inclined surface of the second cleaning portion is in contact with the inclined portion of the lower surface side of the bevel portion of the substrate. Substrate cleaning method.   The second cleaning unit is configured to be able to clean the side surface of the bevel portion in addition to the inclined portion on the lower surface side of the bevel portion of the substrate, and the second cleaning unit contacts the side surface of the bevel portion of the substrate. 14. The substrate cleaning method according to claim 13, further comprising a step of cleaning the side surface of the substrate by rotating the substrate while the substrate is rotated. The second cleaning unit is configured such that the upper end of the inclined portion on the upper surface side of the bevel portion of the substrate when the first cleaning unit is positioned outside the outer periphery of the substrate with the first cleaning unit being pressed against the back surface of the substrate. An upper inclined surface that inclines so as to approach the rotation center of the first cleaning section as it goes upward, at a height position that includes a range from the height of the lower end to the height of the lower end,
Cleaning the inclined portion on the upper surface side of the bevel portion of the substrate by rotating the substrate while bringing the upper inclined surface into contact with the inclined portion on the upper surface side of the bevel portion of the substrate held by the substrate holding portion. The substrate cleaning method according to claim 13 or 14, wherein:

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