JP2021090001A - Thermoelectric conversion device, manufacturing method of thermoelectric conversion device, and electric device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-efficiency thermoelectric conversion device which is compact and has a high degree of integration. SOLUTION: A thermoelectric conversion device 1 includes an insulating substrate 11 in which an uneven portion 111 is formed in one direction of a main surface, and a thin film portion in which the surface of the uneven portion 111 is covered with a thin film conductive material. The portion 111 has a set of adjacent side surfaces 113 and 114 having planes orthogonal to the main surface and opposite to each other, and the thin film portion has side surfaces 113 having a P-type thermoelectric material and an N-type thermoelectric material. It is covered with a thermoelectric material layer 23 composed of one of them. [Selection diagram] Fig. 1

Description

The present invention relates to a thermoelectric conversion device technique for converting and generating electric power by utilizing the temperature difference in the environment.

With the advent of the sensor society, there is a demand for a self-supporting power supply integrated with the sensor. Today, thermoelectric elements that combine P-type and N-type thermoelectric materials are expected as self-sustaining power sources in order to reuse environmental temperature differences and waste heat, but until now, bulk sintered bodies have been the mainstream. (Patent Documents 1 and 2), the development of a small thermoelectric power source has been delayed.

In recent years, in order to meet such a demand for miniaturization, a thin film thermoelectric element using a thin film that can be formed on a substrate has been proposed (Patent Document 3). Thermoelectric generator described in Patent Document 3, P-type thermoelectric conversion portion of the thin film along the upper surface of the insulating substrate S _i O _2, electrically conductive portion, arranged the N-type thermoelectric conversion unit to the right and left in this order, and left and right It has a structure in which electrodes are provided at both ends, a heat conductive portion is arranged above the electric conductive portion, and a heat bath plate over the entire surface is arranged above the heat conductive portion. Then, when a temperature gradient is applied between the hot bath plate and the insulating substrate, heat is applied to the insides of the P-type thermoelectric conversion unit and the N-type thermoelectric conversion unit in opposite directions to each other via the heat conductive portion. By providing a temperature gradient in the left-right arrangement direction of the P-type thermoelectric conversion unit and the N-type thermoelectric conversion unit, that is, in the longitudinal direction in this way, it is possible to secure a predetermined power generation efficiency.

JP-A-2007-246294 Japanese Unexamined Patent Publication No. 2004-253618 JP-A-2018-037542

However, in the thermoelectric power generation device described in Patent Document 3, since the application direction of the temperature gradient coincides with the surface direction of the insulating substrate, the P-type thermoelectric conversion unit and the N-type thermoelectric conversion unit for ensuring a high temperature gradient There is a trade-off between the element length of the above and the number of integrated P-type thermoelectric conversion units and N-type thermoelectric conversion units, and there is a certain limit to efficiency, that is, an increase in generated power.

The present invention has been made in view of the above. The main surface of an insulating substrate is formed into a long uneven shape to form a side surface, and a thin film of a thermoelectric material is formed on the side surface to form a vertical structure. The present invention provides a compact, highly integrated and highly efficient thermoelectric conversion device, a method for manufacturing the thermoelectric conversion device, and a sensor device by eliminating the trade-off relationship between the two.

The thermoelectric conversion device according to the present invention includes an insulating substrate in which uneven portions are formed in at least a part of the main surface in one direction, and a thin film portion in which the surface of the uneven portions is covered with a thin film conductive material. The uneven portion has a set of adjacent first side surfaces and second side surfaces that intersect the main surface and have surfaces that are opposite to each other, and the thin film portion has the first side surface. Is covered with a first thin film layer composed of one of a P-type thermoelectric material and an N-type thermoelectric material.

According to the present invention, the surface intersecting the main surface of the insulating substrate is covered with the first thin film layer, which is one of the P-type thermoelectric material and the N-type thermoelectric material. However, the number of accumulations can be increased. Further, when the uneven portions are connected in series, the electromotive force is superimposed, and a more efficient thermoelectric conversion device can be provided.

Further, the thin film portion is formed by covering the second side surface with a second thin film layer composed of one of the other thermoelectric material layer and the metal layer of the P-type thermoelectric material and the N-type thermoelectric material. According to this configuration, it is possible to selectively set whether the second side surface of the side surface is a thermoelectric material layer or a metal layer in one set.

Further, the thin film portion is formed by covering one of the first and second side surfaces with a P-type thermoelectric material and the other with an N-type thermoelectric material. According to this configuration, electromotive force is generated on both sides of one set, and double the electric power can be obtained, so that the efficiency can be improved.

Further, the thin film portion has a connecting portion formed of a metal layer, which is interposed between the first side surface and the second side surface. According to this configuration, the degree of freedom in designing the shapes of the first and second side surfaces is increased by interposing the connecting portion.

Further, the first and second side surfaces are orthogonal to the main surface. According to this configuration, the vertical dimension length of the first side surface can be set to the maximum, so that the electromotive force with respect to the temperature gradient is maximized.

Further, in the present invention, the width dimension of the convex portion side of the uneven portion with respect to the one direction is several nm to several hundred μm. Further, in the present invention, the width dimension of the concave-convex portion on the concave side in the one direction is several nm to several hundred μm. Further, in the present invention, the height dimension of the first and second side surfaces is several tens of nm to several mm.

Further, the method for manufacturing a thermoelectric conversion device according to the present invention includes a step of supplying a solution containing a powdery metal to the concave-convex side surface of the uneven portion, and a step of evaporating the supplied solution to solidify the metal layer. It includes a step of forming. According to the present invention, the film formation on the concave side surface of the uneven portion is easy and reliable.

Further, in the method for manufacturing a thermoelectric conversion device, one of the vaporized vaporized P-type thermoelectric material and N-type thermoelectric material is discharged from above toward the first side surface to form a first thin layer portion. A film is formed. According to the present invention, it is possible to penetrate into the gap facing the first side surface and perform vapor deposition over the entire length of the first side surface in the vertical direction.

The electric device according to the present invention includes a substrate, a thermoelectric conversion device, and an electrically operated electric device, and the thermoelectric conversion device and the electric device are connected via power supply wiring and mounted on the substrate. It is a thing. According to the present invention, it is possible to provide an electric device including a thermoelectric conversion device having a power generation function and an electric device integrally composed of a substrate. According to this, the limitation of the arrangement place is solved because the energization is impossible or difficult, and the selectivity of the arrangement of the IOT and other electric devices is mainly increased.

According to the present invention, it is possible to provide a highly efficient thermoelectric conversion device that is compact and has a high degree of integration.

It is sectional drawing which shows one Embodiment of the thermoelectric conversion device which concerns on this invention. It is sectional drawing explaining the current flowing through the thermoelectric conversion device shown in FIG. 1 and the temperature gradient. It is sectional drawing explaining the shape of each part of the insulating substrate which constitutes the thermoelectric conversion device shown in FIG. 1 and the dimension of each part. FIG. 4A is a process diagram showing an example of a manufacturing process of the thermoelectric conversion device shown in FIG. 1, FIG. 4A is a diagram showing a state of the uneven portion 111 after formation, and FIGS. It is a figure which shows the film formation process for each surface. It is a schematic diagram which shows the principle of the oblique vapor deposition method by the molecular beam vapor deposition method which is one of the film formation methods on a side surface. 6 (A) is a perspective view of the thermoelectric conversion device shown in FIG. 1, and FIG. 6 (B) is a thermoelectric conversion device of the first aspect in which a plurality of FIGS. 6 (A) are mounted and arranged on a substrate. C) is a perspective view of the thermoelectric conversion device of the second aspect formed so as to be arranged in a plurality of arrangements. It is a perspective view of the sensor device which shows one Embodiment which integrated the sensor device and the thermoelectric conversion device.

The thermoelectric conversion device 1 according to the present invention will be described with reference to the cross-sectional views of FIGS. 1 to 3 and the perspective view of FIG. 6 (A). The thermoelectric conversion device 1 includes an insulating substrate 11 shown in FIG. The insulating substrate 11 is formed with a concavo-convex portion 111 by processing the main surface (upper surface) side thereof or by performing a patterning process using a lithograph or the like. The insulating substrate 11 may have a predetermined shape, for example, a rectangular shape (FIG. 6 (A)). In the present embodiment, the uneven portion 111 of the insulating substrate 11 is formed to have a rectangular cross section in the left-right direction of the main surface, and is elongated in the depth direction as shown in FIG. 6 (A). It has a concave and convex shape.

As shown in FIG. 3, the uneven portion 111 intersects the main surface of the insulating substrate 11, and in the present embodiment, a pair of side surfaces 113 and 114 adjacent to each other, which are orthogonal to each other and have surfaces opposite to each other. Have. At least one of the uneven portions 111 is formed so as to be arranged in the left-right direction of the main surface as described above. In addition, each uneven portion 111 may be connected to each other on the bottom (concave) side or the top (convex) side at both ends of a set of adjacent side surfaces 113 and side 114. The portions of the bottom (concave) side and the top (convex) side are referred to as the bottom 112 and the top 115, respectively. In this embodiment, the temperature gradient is applied in a direction orthogonal to the main plane.

The insulating substrate 11 is made of a solid insulator or a resin, and in this embodiment, silicon dioxide ( _Si O ₂ : silica) among the inorganic solid insulators is used. Insulating substrate 11 may include those formed by performing oxidation treatment on the main surface of the silicon S _i of the plate-like body. If it is made of resin, the uneven portion 111 may be formed by physical indentation. In addition, in the aspect made of resin, elastic deformation is possible.

As described with reference to FIG. 4A, the uneven portion 111 of the insulating substrate 11 is formed by applying a known method of photoresist and etching treatment in the present embodiment. In each drawing, the shape and size of the uneven portion 111 and the thickness dimension of the thin film described later are exaggerated as appropriate for convenience of explanation.

In the present embodiment, as shown in FIG. 3, among the dimensions of the shape of the uneven portion 111, the height dimension H of the side surfaces 113 and 114 extends to the power generation efficiency (electromotive force) and the lower ends of the opposite side surfaces 113 and 114. In consideration of ensuring an appropriate film forming process, several tens of nm (nanometers) to several mm (millimeters) can be adopted, and several hundreds of nm to several hundreds of μm (micrometers) are more preferable. The width dimension T of the top portion 115 can be adopted from several nm to several hundred μm in consideration of the number of integrated uneven portions 111, and more preferably several nm to several tens of μm. The width dimension D of the bottom portion 112 can be several nm to several hundred μm in consideration of ensuring an appropriate film forming process up to the lower ends of the facing side surfaces 113 and 114 and the height dimension H, and is several tens of nm. ~ Several tens of μm is more preferable.

In FIGS. 1 and 2, the thermoelectric conversion device 1 is formed by forming a film on the surface of the bottom portion 112 with a thin metal layer 22. Further, on the other hand of the side surfaces 113 and 114, in the present embodiment, the side surface 113 is formed of a thin layer of a P-type thermoelectric material or an N-type thermoelectric material thermoelectric material layer 23 (first thin film layer). In this way, by using the surface orthogonal to the main surface as the film formation site of the thermoelectric material layer 23, the integration density is increased as compared with the case where the thermoelectric material layer is formed parallel to the main surface as in the conventional case. The number of integrated thermoelectric material layers can be increased, and a more efficient thermoelectric conversion device can be manufactured. The other side surface 114 is formed of a thin metal layer 24 (second thin film layer). The surface of the top 115 is formed of a thin metal layer 24 as a film. Various methods can be adopted for the film forming treatment on each surface, but in the present embodiment, the vapor deposition method is adopted.

In this way, a thin film portion is formed by covering at least the entire area from the bottom 112 of the uneven portion 111 to the top 115 through the side surfaces 113 and 114 with a conductive material to form a current-carrying path. Further, since the thermoelectric material layer 23 is formed into a film on the side surface 113 orthogonal to the main surface, an electromotive force is generated in the thermoelectric material layer 23 when a temperature gradient is applied in the vertical direction of the insulating substrate 11. The electromotive force depends on the product of the Seebeck coefficient of the thermoelectric material layer 23 and the temperature difference ΔT applied to both ends of the thermoelectric material layer 23. Further, since the side surface 113 is formed in the vertical direction and the height dimension H is set to be large, the temperature difference ΔT can be increased and a high electromotive force can be obtained. With this configuration, the electromotive force generated in the thermoelectric material layer 23 supplies a current in the direction indicated by the arrow in FIG. 2 or applies a voltage to an external load (sensor, etc.) shown in the figure via an energization path. It becomes possible to do. In addition, when the load includes a secondary battery, charging is also possible.

Next, the material for the thin film will be described. First, the insulating substrate 11 is heated so that when a temperature gradient is applied in the vertical direction of the side surface 113 as described later, the temperature gradient is maintained between the upper and lower ends of the side surface 113 for as long as possible. a low conductivity material, for example the silicon dioxide (S _i O _2: silica) is preferably formed of a solid insulator or resin such.

The metal layers 22 and 24 are preferably materials having high electrical conductivity and low thermal conductivity. In this embodiment, Au, Al, Ni, Ti, Cr, Co, transition metal silicide (CrSi, TiSi, NiSi, etc.), ITO, and the like can be adopted. Further, in the present embodiment, the side surface 114 is also formed of the same metal as the metal layer 24 as described later. Each metal layer is preferably made of a material having a low thermal conductivity.

As the thermoelectric material layer 23, Si, _{VDD (FeSi 2} , CoSi _{, CaSi 2,} etc.), SiGe alloy, SiGeSn alloy, ZnO, SnO ₂ , IGZO and the like can be adopted. Furthermore, nanostructures (CNTs, fullerenes, Ge nanoparticles, ZnO nanowires, superlattices, etc.) may be contained in these thin films. Further, as the thermoelectric material layer 23, a material having a low thermal conductivity is adopted in order to maintain the temperature gradient as described above.

FIG. 4 is a process diagram showing an example of the manufacturing process of the thermoelectric conversion device 1. Photolithography, an inkjet method, or chemical vapor deposition (CVD) can be adopted for manufacturing the thermoelectric conversion device 1, but in this embodiment, photolithography is adopted. First, FIG. 4A shows the state of the uneven portion 111 after formation. The uneven portion 111 forms a concave-convex shape by exposing the main surface side of the insulating substrate 11 with photoresist masking applied to the top 115 of the upper surface of the insulating substrate 11 at predetermined intervals and performing etching treatment. ..

4 (B) to 4 (D) are views showing a film forming process on each surface of the uneven portion 111. Here, a vaporized thin film substance is vapor-deposited on the main surface side of the insulating substrate 11 to form a film. In this embodiment, the oblique vapor deposition method (Molecular Beam Epitaxy (MBE)) is adopted. In the oblique vapor deposition method, a thin film substance is heated and vaporized in a vacuum vessel, molecular beams having a uniform direction are emitted toward a target (concave and convex portions 111 of the insulating substrate 11), and vapor deposition is performed on the film formation target surface of the uneven portion 111. It is then solidified or solidified (deposited). The amount of film formed on the thin layer portion can be controlled by setting it appropriately.

FIG. 4B shows a film forming process on the bottom 112. The metal layer 22 is formed by vaporizing the vaporized substance from directly above the surface of the bottom 112 and discharging it directly below.

FIG. 4C shows a film forming process on the side surface 113. Details of the film forming process on the side surface 113 are shown in FIG. FIG. 5 is a schematic view showing the principle of the oblique vapor deposition method by the molecular beam vapor deposition method. The vapor deposition source 3 is placed in an appropriate position above the insulating substrate 11, and the P-type thermoelectric material or the N-type thermoelectric material vaporized by the vapor deposition source 3 to be vapor-deposited is placed from the upper right to the lower left, that is, the insulating substrate 11. It is emitted at an substantially angle θ with respect to the normal line, and is vapor-deposited on each side surface 113 of the target. The length dimension of the insulating substrate 11 (horizontal direction in FIG. 5) is actually on the order of nm to mm, and the molecular beam is emitted over the entire length of the insulating substrate 11 at an emission angle θ. Alternatively, if necessary, a mode in which one side, for example, the insulating substrate 11 is relatively moved to discharge while maintaining the angle θ toward the total length can be adopted. In these cases, the angle θ is such that the emitted molecular beam enters the gap of the dimension D and is deposited over the entire length of the side surface 113 in the vertical direction according to the width dimension D and the height dimension H (see FIG. 3). Is set to. As a result, the thermoelectric material is deposited on the top 115 in addition to the side surface 113 (see FIG. 1), but it is sufficient if the thermoelectric material is deposited on the side surface 113 orthogonal to the main surface. It doesn't matter.

FIG. 4D shows a film forming process on the side surface 114. The film forming process on the side surface 114 is such that the molecular beam of the vapor-deposited substance is emitted from the opposite direction of FIG. 5, that is, from the angle θ to the left with respect to the normal direction of the main surface. The released vapor film material is the same metal as in FIG. 4 (B). The metal layer is eventually formed on the top 115 in addition to the side surface 114, but it is sufficient that the metal layer is deposited on the side surface 113, regardless of whether or not the metal layer is deposited on the top 115.

Through the above manufacturing process, the thermoelectric conversion device 1 shown in FIG. 1 is manufactured. In the thermoelectric conversion device 1, the metal layers 22 and 24 are formed on the bottom 112 and the top 115 of the uneven portion 111, and the metal layers 22 and 24 are formed in the vertical direction orthogonal to the main surface. The thermoelectric material layer 23 is formed, and the metal layer 24 is formed on the side surface 114.

6A and 6B show various aspects of the thermoelectric conversion device, FIG. 6A is a perspective view of the thermoelectric conversion device 1 shown in FIG. 1, and FIG. 6B shows FIG. 6A on a substrate. FIG. 6 (C) of the thermoelectric conversion device 1A of the first aspect mounted in a plurality of arrangements is a perspective view of the thermoelectric conversion device 1B of the second aspect formed so as to be arranged in a plurality of arrangements. In the drawing, the thin layer portions formed on the respective surfaces 112 to 115 of the uneven portion 111 are omitted for drawing purposes.

In the thermoelectric conversion device 1A shown in FIG. 6B, the thermoelectric conversion device 1 shown in FIG. 1 is connected in series, in parallel, or in series and parallel on one substrate 4, and the required level of current amount, voltage, and Or power can be output. By appropriately setting the size of the substrate 4 or the arrangement pitch and arrangement distribution of the thermoelectric conversion device 1, a desired level of output can be secured.

The thermoelectric conversion device 1B shown in FIG. 6C uses an insulating substrate 11 having a predetermined size or corresponding to the substrate 4 of FIG. 6B, and the thermoelectric conversion device 1 is directly formed on the insulating substrate 11. , And a plurality of them are distributed. FIG. 6C shows one of the thermoelectric conversion devices 1b. The thermoelectric conversion device 1B has a concave-convex shape opposite to that of the thermoelectric conversion device 1 shown in FIG. 6 (A). The present invention includes both forms.

FIG. 7 is a perspective view of a sensor device 6 showing an embodiment in which a sensor device and a thermoelectric conversion device are integrated. The sensor device 6 includes a thermoelectric conversion device 1, a sensor device 61, and a substrate 5 on which the thermoelectric conversion device 1 and the sensor device 61 are mounted. The thermoelectric conversion device 1 and the sensor device 61 are connected by a power supply wiring 14, and the electric power generated by the thermoelectric conversion device 1 can be supplied to the sensor device 61. As long as the sensor device 61 operates by being supplied with electric power, various environmental sensors such as a temperature sensor, various sensors such as a human body or animal detection using ultrasonic waves or infrared rays, or a short-range sensor can be adopted. Is.

The present invention includes the following aspects.

(1) The film forming process of the metal layers 22 and 24 may be before or after the film forming process on the side surfaces 113 and 114. Further, according to the manufacturing process shown in FIG. 4, the top 115 has two layers, that is, a thermoelectric material in the lower layer and a metal material in the upper layer. By applying a masking process to 115 and performing a film forming process by an oblique vapor deposition method, a film can be formed with either one layer. It should be noted that the top 115 can exhibit its intended function regardless of whether the film is formed of a thermoelectric material or a metal material.

(2) In the present embodiment, the side surface 113 is a P-type or N-type thermoelectric material layer and the side surface 114 is a metal layer, but the side surface 114 may be a thermoelectric material layer depending on the application and the like. In this case, the side surface 113 may be a P-type thermoelectric material layer, the side surface 114 may be an N-type thermoelectric material layer, or vice versa. In this way, by applying thermoelectric materials of opposite types to each other and generating electromotive force in the opposite direction with respect to the temperature gradient in the same direction, it is possible to pass a current in the same direction in the energization path shown in FIG. And the amount of current is doubled, so efficiency can be improved.

(3) In particular, as a method for forming the metal layer 22 on the bottom 112, instead of the lithography method, an appropriate amount of a solution containing, for example, a powdery metal substance is supplied, for example, dropped, and naturally or artificially in that state. A method may also be used in which the contained metal is condensed and solidified by drying to form a film. With this method, film formation in deep places is easy and reliable.

(4) In the present embodiment, a rectangular cross section is adopted as the side surface, but a side surface having an arc shape such as a semicircle cross section, a side surface having various vertical components such as a trapezoid and a triangle, and a flat or curved side surface. A thermoelectric material layer may be adopted for. In these cases, the top and bottom may be interposed between the first and second side surfaces, and a metal layer may be formed on the top and bottom. Alternatively, the thermoelectric material on the first side surface and the metal layer on the second side surface are connected so that the first and second side surfaces are directly connected without interposing the top and bottom on which the metal layer is formed. It may be in the form of a film formed.

(5) The application target is not limited to various sensor devices used in IOT (Internet Of Things), but also electric actuators having moving parts such as small to ultra-small motors, electric devices including signals or information processing chips, etc. including. The sensor device 6 functions as an electric device in which the thermoelectric conversion device 1 and the electric device are integrally provided on the substrate 5. The electric device may include, for example, a device having a static processing operation in addition to the dynamic operation as long as it is a device that receives power supply and exhibits the desired function.

(6) In the thermoelectric conversion device according to the present invention, a transparent material can be applied to the insulating substrate 11 depending on the application, and in this case, thermoelectric conversion using sunlight becomes possible. For example, an application example in which the thermoelectric conversion device 1B of FIG. 6B is attached to a window and the temperature difference between indoors and outdoors is used can be considered. Further, the sensor device having an integrated configuration may be operated by using a power source obtained by utilizing the body temperature from the thermoelectric conversion device attached to the human body.

1,1A, 1B Thermoelectric conversion device 11 Insulated substrate 111 Concavo-convex part 112 Bottom part (connecting part, convex part)
113 side surface (first side surface)
114 side surface (second side surface)
115 Top (connecting part, convex part)
22,24 metal layer (thin film part, second thin film layer)
23 Thermoelectric material layer (thin film part, first thin film layer)
3 Thin film deposition source 6 Sensor device (electric device)
61 Sensor device

Claims (11)

An insulating substrate in which uneven portions are formed in at least a part of the main surface in one direction,
A thin film portion in which the surface of the uneven portion is covered with a thin film conductive material is provided.
The concavo-convex portion has a pair of adjacent first and second side surfaces that intersect the main surface and have surfaces that are opposite to each other.
The thin film portion is a thermoelectric conversion device in which the first side surface is covered with a first thin film layer made of one of a P-type thermoelectric material and an N-type thermoelectric material. The first aspect of the thin film portion, wherein the second side surface is covered with a second thin film layer composed of one of the other thermoelectric material layer and the metal layer of the P-type thermoelectric material and the N-type thermoelectric material. Thermoelectric conversion device. The thermoelectric conversion device according to claim 2, wherein the thin film portion is formed by covering one of the first and second side surfaces with a P-type thermoelectric material and the other with an N-type thermoelectric material. The thermoelectric conversion device according to any one of claims 1 to 3, wherein the thin film portion has a connecting portion formed of a metal layer interposed between the first side surface and the second side surface. The thermoelectric conversion device according to any one of claims 1 to 4, wherein the first and second aspects are orthogonal to the main surface. The thermoelectric conversion device according to claim 5, wherein the width dimension of the convex portion side of the uneven portion in one direction is several nm to several hundred μm. The thermoelectric conversion device according to claim 5, wherein the width dimension of the concave-convex portion on the concave side in one direction is several nm to several hundred μm. The thermoelectric conversion device according to any one of claims 1 to 7, wherein the height dimension of the first and second side surfaces is several tens of nm to several mm. The method for manufacturing a thermoelectric conversion device according to claim 4.
A method for manufacturing a thermoelectric conversion device, which comprises a step of supplying a solution containing a powdery metal to a surface of the uneven portion on the concave side, and a step of evaporating the supplied solution to solidify and form a metal layer. The method for manufacturing a thermoelectric conversion device according to any one of claims 1 to 8.
A method for manufacturing a thermoelectric conversion device in which one of the vaporized P-type thermoelectric material and the N-type thermoelectric material is discharged from above toward the first side surface to form a film on the first thin layer portion. .. A substrate, the thermoelectric conversion device according to any one of claims 1 to 8, and an electrically operated electric device are provided, and the thermoelectric conversion device and the electric device are connected to the substrate via power supply wiring. On-board electric device.

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