JP2021039989A - Substrate processing device and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method capable of efficiently suppressing contamination of a substrate caused by collision of a processing liquid excluded from the substrate with surrounding members. An outer annular member 13 has an upper guide surface 60 that guides a treatment liquid existing on an upper surface of a substrate W to a radial outer RO from a peripheral edge of an upper surface of the substrate W by centrifugal force. The outer annular guide portion 15 faces the upper guide surface 60 from above at intervals, and guides the treatment liquid existing on the upper guide surface 60 to the radial outer RO together with the upper guide surface 60. Have. The third guard 71C receives the treatment liquid discharged from the outer annular member 13 in a state where the lower surface of the third extension portion 76C is arranged at a position close to the guide surface close to the upper guide surface 60. The first guard 71A is located at a discharge space forming position formed by the first extension portion 76A together with the third extension portion 76C in the treatment liquid discharge space 66 through which the treatment liquid discharged from the outer annular member 13 passes. [Selection diagram] FIG. 5B

Description

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for FPDs (Flat Panel Display) such as organic EL (Electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, and substrates for opto-magnetic disks. Includes substrates such as substrates, photomask substrates, ceramic substrates, and solar cell substrates.

In the substrate processing apparatus described in Patent Document 1 below, an annular top plate facing from above is provided on the upper surface of the substrate. The diameter of the top plate is slightly smaller than the diameter of the radial inner end of the cup portion that receives the liquid scattered from the substrate, and the outer peripheral edge of the top plate is close to the inner peripheral surface of the cup portion. Therefore, by rotating the top plate integrally with the substrate and supplying a liquid such as pure water to the upper surface of the top plate, a swirling liquid film is formed on the inner peripheral surface of the cup portion. The processing liquid scattered from the substrate by supplying the processing liquid to the upper surface of the substrate with the swirling liquid film formed is received by the swirling liquid film. Since the droplets generated by the treatment liquid scattered from the substrate colliding with the swirling liquid film are flowed to the front side in the rotation direction of the swirling liquid film, it is possible to prevent the droplets from adhering to the substrate.

Japanese Patent No. 6134673

In the substrate processing apparatus described in Patent Document 1, in order to suppress the adhesion of the treatment liquid to the substrate, it is necessary to bother to supply the liquid to the upper surface of the top plate, as compared with the configuration in which the liquid is supplied only to the substrate. , Liquid consumption may increase. Further, it is necessary to provide a nozzle for supplying the liquid on the upper surface of the top plate. Therefore, there is a need for a configuration that can more efficiently suppress the adhesion of the treatment liquid droplets to the substrate.

Therefore, one object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of efficiently suppressing contamination of the substrate caused by collision of the processing liquid excluded from the substrate with surrounding members. That is.

One embodiment of the present invention includes a substrate holding unit that holds the substrate horizontally, a substrate rotating unit that rotates the substrate holding unit around a vertical axis passing through a central portion of the substrate held by the substrate holding unit, and the like. An upper processing liquid supply unit that supplies the processing liquid toward the upper surface of the substrate held by the substrate holding unit, and a first annular guide portion that surrounds the substrate held by the substrate holding unit in a plan view. When the substrate held by the substrate holding unit is rotated by the substrate rotating unit, the treatment liquid existing on the upper surface of the substrate is centered on the vertical axis rather than the peripheral edge of the upper surface of the substrate by centrifugal force. A first annular guide portion having an upper guide surface that guides outward in the radial direction, and a second annular guide portion that surrounds the substrate held by the substrate holding unit in a plan view, and the upper guide surface. A second annular guide portion having an opposing guide surface that faces outward from above at intervals and guides the treatment liquid existing on the upper guide surface to the outside in the radial direction together with the upper guide surface, and the diameter. It has an upper extension portion extending in the direction, and receives the treatment liquid discharged from the first annular guide portion in a state where the lower surface of the upper extension portion is arranged at a position close to the guide surface close to the upper guide surface. It has an upper guard and a lower extension portion that faces the upper extension portion from below and extends in the radial direction, and extends the treatment liquid discharge space through which the treatment liquid discharged from the first annular guide portion passes. Provided is a substrate processing apparatus further including a lower guard located at a discharge space forming position formed by the lower extension portion together with the installation portion.

According to this device, the processing liquid supplied to the upper surface of the substrate is guided on the upper guide surface of the first annular guide portion radially outward from the peripheral edge portion of the substrate by the centrifugal force based on the rotation of the substrate. Will be done. Therefore, the treatment liquid on the upper guide surface forms a flow outward in the radial direction and is discharged to the outside of the first annular guide portion.
The facing guide surface of the second annular guide portion, together with the upper guide surface, guides the processing liquid on the upper guide surface outward in the radial direction. Since the facing guide surface faces the upper guide surface from above, it is possible to suppress the treatment liquid from splashing upward when guiding the treatment liquid on the upper guide surface outward in the radial direction. Therefore, the treatment liquid can be smoothly discharged outward in the radial direction from the first annular guide portion in a continuous flow state.

The upper guard is arranged at a guide surface proximity position where the upper extension portion is close to the radial outer end of the upper guide surface. Therefore, the treatment liquid discharged from the first annular guide portion is radially outside along the upper extension portion of the upper guard close to the radial outer end of the upper guide surface while maintaining the continuous flow state. Move further towards. Therefore, it is possible to prevent the treatment liquid from colliding with the upper guard and rebounding the treatment liquid in the droplet state.

Since the treatment liquid passes through the treatment liquid discharge space while traveling through the upper extension portion of the upper guard, even if mist is generated from the treatment liquid that propagates through the upper extension portion for some reason, the mist spreads downward. It adheres to the installation part from above and prevents the mist from moving out of the treatment liquid discharge space. Therefore, it is possible to suppress the diffusion of the mist of the treatment liquid into the treatment liquid discharge space.
When the upper guard is located close to the guide surface, the lower surface of the upper extension portion is close to the upper guide surface of the first annular guide portion, so that the lower surface of the upper extension portion and the upper surface of the first annular guide portion are located. The gap between the guide surface and the guide surface is narrow. Further, in the gap, the treatment liquid discharged from between the upper guide surface and the facing guide surface of the second annular portion flows outward in the radial direction.

Therefore, the mist of the treatment liquid passes through the gap between the lower surface of the upper extension portion and the upper guide surface and the gap between the upper guide surface and the facing guide surface of the second annular portion, and passes through the upper surface of the substrate. It is unlikely to reach the vicinity. Therefore, even if the mist generated from the treatment liquid transmitted through the upper extension portion is not received by the lower extension portion for some reason, it moves inward in the radial direction from the first guide annular portion. Is blocked. Therefore, it is possible to prevent the mist of the treatment liquid from drifting around the substrate and finally adhering to the substrate.

As described above, it is possible to efficiently suppress the contamination of the substrate caused by the treatment liquid discharged from the substrate colliding with the surrounding members.
In one embodiment of the present invention, the substrate processing apparatus further includes a lower processing liquid supply unit that supplies the processing liquid toward the lower surface of the substrate held by the substrate holding unit. When the first annular guide portion rotates the substrate held by the substrate holding unit to the substrate rotating unit, the treatment liquid existing on the upper surface of the substrate is centrifugally forced from the peripheral edge of the lower surface of the substrate. Also has a lower guide surface that guides outwards. The discharge space forming position is a position where the end portion of the lower extending portion in the radial direction is located below the lower guide surface of the first annular guide portion. Then, the lower treatment liquid supply unit starts supplying the treatment liquid while the treatment liquid is being supplied from the upper treatment liquid supply unit toward the upper surface of the substrate held by the substrate holding unit.

According to this configuration, the processing liquid supplied to the lower surface of the substrate is guided to the lower guide surface of the first annular guide portion radially outward from the peripheral edge portion of the substrate by the centrifugal force based on the rotation of the substrate. Will be done. Therefore, the treatment liquid supplied to the lower guide surface forms an outward flow in the radial direction and is discharged to the outside of the first annular guide portion. Since the end of the lower extension portion in the radial direction is located below the lower guide surface of the first annular guide portion, the processing liquid flowing through the lower guide surface is discharged from the first annular guide portion. Then, it scatters in the processing liquid discharge space and is received by the upper guard without traveling along the lower surface of the upper extension portion.

The supply of the treatment liquid to the lower surface of the substrate is started while the treatment liquid is being supplied to the upper surface of the substrate. Therefore, the treatment liquid discharged from the lower guide surface is received by the upper guard via the treatment liquid discharged from the upper guide surface and transmitted through the upper guard. The impact when the treatment liquid discharged from the lower guide surface is received by the upper guard is absorbed by the treatment liquid transmitted through the upper guard.
On the other hand, when the supply of the treatment liquid to the upper surface of the substrate and the supply of the treatment liquid to the lower surface of the substrate are started at the same time, the treatment liquid discharged from the lower guide surface before the treatment liquid is sufficiently transmitted to the upper guard is on the upper side. May be received by the guard.

Therefore, as compared with the case where the supply of the treatment liquid to the upper surface of the substrate and the supply of the treatment liquid to the lower surface of the substrate are started at the same time, it is possible to suppress the generation of droplets and mist due to the collision with the upper guard.
In one embodiment of the present invention, the substrate processing apparatus further includes a lower processing liquid supply unit that supplies the processing liquid toward the lower surface of the substrate held by the substrate holding unit. The first annular guide portion guides the processing liquid existing on the lower surface of the substrate held by the substrate holding unit to the outside of the peripheral edge of the lower surface of the substrate in the radial direction. Have. The discharge space forming position is located between the upper guide surface and the lower guide surface of the first annular guide portion in the vertical direction at the end of the lower extension portion inward in the radial direction. The position.

According to this configuration, the processing liquid supplied to the lower surface of the substrate is placed on the lower guide surface of the first annular guide portion radially outward from the peripheral edge portion of the substrate by the centrifugal force based on the rotation of the substrate. You will be guided. Therefore, the treatment liquid on the lower guide surface forms a flow outward in the radial direction and is discharged to the outside of the first annular guide portion. The lower guard is located at a discharge space forming position where the end of the lower extending portion in the radial direction is located between the upper guide surface and the lower guide surface of the first annular guide portion in the vertical direction. Therefore, the treatment liquid discharged from the first annular guide portion scatters from the first annular guide portion below the lower extension portion of the lower guard and is received by the lower guard. On the other hand, when the treatment liquid on the upper guide surface is discharged from the first annular guide portion, it scatters in the treatment liquid discharge space and is received by the upper guard.

Therefore, the treatment liquid discharged from the upper surface of the substrate and the treatment liquid discharged from the upper surface of the substrate are discharged from the lower surface of the substrate while efficiently suppressing the contamination of the substrate caused by the collision of the treatment liquid discharged from the upper surface of the substrate with the surrounding members. The treatment liquid can be received by a separate guard.
In one embodiment of the present invention, the substrate processing apparatus has an intermediate extension portion that faces the upper extension portion from below, faces the lower extension portion from above, and extends in the radial direction. At the guard contact position where the intermediate extension portion contacts the upper extension portion so that the processing liquid flowing outward in the radial direction along the lower surface of the extension portion is guided to the lower surface of the intermediate extension portion. Includes additional deployable intermediate guards.

According to this configuration, by arranging the intermediate guard at the guard contact position where the intermediate extension portion contacts the upper extension portion, the treatment liquid flowing outward in the radial direction along the lower surface of the upper extension portion is intermediate. Guided to the underside of the extension. Therefore, by arranging the intermediate guard at the guard contact position, it is possible to switch the extension portion along which the processing liquid discharged from the upper surface of the substrate is placed. Therefore, it is possible to switch the guard that receives the processing liquid discharged from the upper surface of the substrate while efficiently suppressing the contamination of the substrate caused by the treatment liquid discharged from the upper surface of the substrate colliding with the surrounding members. ..

In one embodiment of the present invention, the substrate processing apparatus faces the upper extension portion from above, and a capture guard is formed between the substrate processing apparatus and the upper extension portion to form a capture space for capturing the mist of the treatment liquid. Including further.
When the treatment liquid is supplied to the upper surface of the substrate, the mist of the treatment liquid is generated due to the collision between the treatment liquid and the upper surface of the substrate, and the generated mist may adhere to the second annular guide portion or the upper guard. The mist adhering to these members floats on the upper surface of the substrate again and finally adheres to the upper surface of the substrate, which may contaminate the upper surface of the substrate.

Therefore, if a capture guard is arranged so that a capture space is formed between the upper extension portion and the capture guard, the mist of the treatment liquid generated by the collision between the treatment liquid and the upper surface of the substrate can be captured. , It is possible to suppress the contamination of the substrate caused by the mist generated by the supply of the treatment liquid to the upper surface of the substrate.
In one embodiment of the present invention, the substrate processing apparatus faces the peripheral edge of the upper surface of the substrate held by the substrate holding unit from above, and approaches the second annular guide portion from the inside in the radial direction. Further includes an inner annular portion facing each other.

When the treatment liquid existing on the upper surface of the substrate enters between the upper guide surface of the first annular guide portion and the opposite guide surface of the second annular guide portion, it may collide with the second annular guide portion and bounce off. .. Therefore, by arranging the inner annular portion that faces the second annular guide portion from the inside in the radial direction above the peripheral edge of the upper surface of the substrate, the diameter of the treatment liquid that bounces off from the second annular guide portion. It can prevent inward movement in the direction. Therefore, it is possible to efficiently suppress the contamination of the substrate caused by the treatment liquid discharged from the substrate colliding with the surrounding members.

In one embodiment of the present invention, the substrate holding unit has a base, a support surface that supports the substrate from below at a position spaced upward from the upper surface of the base, and a substrate supported by the support surface. It includes a plurality of chuck pins that are detachable from the outside in the radial direction and have a grip portion that grips the substrate by coming into contact with the substrate supported by the support surface. The substrate processing device has a substrate receiving surface that receives the substrate from below, and a connecting member that connects the inner annular portion and the base, and the substrate are placed on the substrate receiving surface, and the substrate is placed from the substrate receiving surface. The substrate transfer unit for carrying out the substrate, the retracted position below the first substrate transfer position where the substrate is transferred between the substrate receiving surface and the support surface, and the substrate receiving surface and the substrate transport unit. Further includes a connecting member elevating unit that raises and lowers the connecting member to and from a second substrate delivery position where the substrate is delivered between the two. When the connecting member is located at the retracted position, the inner annular portion faces the second annular guide portion in close proximity from the inside in the radial direction.

According to this configuration, the connecting member moves the substrate from the substrate receiving surface of the connecting member to the supporting surfaces of a plurality of chuck pins while the connecting member is being moved to the retracted position while the substrate is placed on the substrate receiving surface. Can be handed over. On the contrary, the connecting member can receive the substrate from the supporting surfaces of the plurality of chuck pins on the substrate receiving surface while the connecting member is being moved to the upper position with the grip portion separated from the substrate. Therefore, the substrate transfer unit can carry out the substrate from the substrate receiving surface of the connecting member or place the substrate on the substrate receiving surface of the connecting member at a position higher than the support surface of the chuck pin.

Therefore, the substrate can be transported at a position separated from the base as compared with the configuration in which the substrate transport unit carries out the substrate from the support surface or mounts the substrate on the support surface. Therefore, the substrate can be easily transported by the substrate transport unit.
Further, the connecting member delivers the substrate to the support surfaces of the plurality of chuck pins and then positions the inner annular portion in the retracted position so that the inner annular portion is brought close to the second annular guide portion and is opposed to the inner annular portion in the radial direction. Can be done. Therefore, immediately after the substrate is delivered, the inner annular portion can be arranged at a position where the processing liquid bounced off from the second annular guide portion can be prevented from moving inward in the radial direction.

In one embodiment of the present invention, the inner annular portion faces both the upper guide surface and the peripheral edge portion of the upper surface of the substrate held by the substrate holding unit from above. Then, the gap between the inner annular portion and the second annular guide portion is located above the upper guide surface.
When the treatment liquid bounced off from the second annular guide portion adheres to the inner annular portion, the treatment liquid may become droplets and fall from the inner annular portion. If the gap between the inner annular portion and the second annular guide portion is located above the upper guide surface, the droplets of the treatment liquid that have fallen from the inner annular portion are not on the upper surface of the substrate but on the upper guide surface. Adheres to the surface. Therefore, it is possible to prevent the treatment liquid whose inner annular portion is prevented from moving inward in the radial direction from adhering to the upper surface of the substrate.

In one embodiment of the present invention, the gap between the inner annular portion and the second annular guide portion is a labyrinth gap.
The droplets and mist of the treatment liquid generated when the treatment liquid collides with the second annular guide portion pass through the gap between the inner annular portion and the second annular guide portion to the inner annular portion and the second annular guide portion. May move upwards. Droplets and mist of the treatment liquid that have moved above the inner annular portion and the second annular guide portion may drift in the surrounding space and finally adhere to the upper surface of the substrate.

Therefore, if the gap between the inner annular portion and the second annular guide portion is a labyrinth gap, it is possible to prevent droplets or mist of the treatment liquid from passing through the gap between the inner annular portion and the second annular guide portion. it can. It is possible to suppress the movement above the inner annular portion and the second annular guide portion. As a result, it is possible to prevent the upper surface of the substrate from being contaminated.
In one embodiment of the present invention, the inner annular portion faces the peripheral edge of the upper surface of the substrate from above, and faces the radial inner end of the second annular guide portion in close proximity to the radial inner end. It has an inner portion to be formed and an outer portion extending outward in the radial direction from the inner portion and facing the second annular guide portion from above. Then, the labyrinth gap is formed between the vertical gap formed between the inner portion and the second annular guide portion and between the outer portion and the second annular guide portion, and is formed from the upper end of the vertical gap. Includes a horizontal gap extending outward in the radial direction.

According to this configuration, the labyrinth gap is composed of a vertical gap and a horizontal gap extending horizontally from the upper end of the vertical gap. Therefore, even if droplets or mist of the treatment liquid generated by the collision between the second annular guide portion and the treatment liquid enter the vertical gap, they collide with the outer portion of the inner annular portion at the upper end of the vertical gap. Therefore, it is possible to prevent the mist and droplets of the treatment liquid from moving from the upper end of the vertical gap from the horizontal gap and being discharged to the outside through the labyrinth gap.

In one embodiment of the present invention, the second annular guide portion and the upper guard are integrally formed, and the facing guide surface and the lower surface of the upper extension portion are connected to each other. Therefore, the treatment liquid discharged outward from the first annular guide portion in the radial direction can be smoothly transmitted from the opposite guide surface of the second annular guide portion to the lower surface of the upper extension portion in a continuous flow state. it can.
In one embodiment of the present invention, the second annular guide portion is formed separately from the upper guard and is supported by the substrate holding unit, and the second annular guide portion is formed on the upper extension portion. Facing each other from the inside in the radial direction. If the second annular guide portion is sufficiently close to the upper extension portion from the inside in the radial direction, the treatment liquid discharged from the first annular guide portion to the outside in the radial direction is discharged in a continuous flow state. , It can be smoothly transmitted from the facing guide surface of the second annular guide portion to the lower surface of the upper extension portion.

Another embodiment of the present invention includes a substrate holding step of holding the substrate horizontally and an upper side of supplying a treatment liquid toward the upper surface of the substrate while rotating the substrate around a vertical axis passing through a central portion of the substrate. In the treatment liquid supply step, the substrate is placed on the upper guide surface of the first annular guide portion which is arranged outside the peripheral edge portion of the substrate in the radial direction about the vertical axis and surrounds the substrate in a plan view. A first step of guiding the treatment liquid existing on the upper surface of the substrate by a centrifugal force based on rotation, and having a facing guide surface facing the upper guide surface from above at intervals, surrounding the substrate. The processing liquid existing on the upper guide surface is guided outward in the radial direction by the facing guide surface and the upper guide surface of the two annular guide portions, and the diameter is larger than that of the first annular guide portion. The upper treatment liquid discharge step of discharging outward in the direction and the upper guard having the upper extending portion extending inward in the radial direction are provided so that the lower surface of the upper extending portion is close to the upper guiding surface. A discharge treatment liquid guiding step of guiding the treatment liquid discharged from the first annular guide portion to the outside in the radial direction while following the lower surface of the upper extension portion by arranging the treatment liquid at the position, and the upper side. By arranging the lower guard having the lower extension portion extending in the radial direction facing the extension portion from below at the discharge space forming position, the treatment liquid discharged from the first annular guide portion passes through. Provided is a substrate processing method including a discharge space forming step of forming a discharge space together with the upper guard.

According to this method, the treatment liquid supplied to the upper surface of the substrate is guided on the upper guide surface of the first annular guide portion radially outward from the peripheral edge portion of the substrate by the centrifugal force based on the rotation of the substrate. Will be done. Therefore, the treatment liquid on the upper guide surface forms a flow outward in the radial direction and is discharged to the outside of the first annular guide portion.
The facing guide surface of the second annular guide portion, together with the upper guide surface, guides the processing liquid on the upper guide surface outward in the radial direction. Since the facing guide surface faces the upper guide surface from above, it is possible to suppress the treatment liquid from splashing upward when guiding the treatment liquid on the upper guide surface outward in the radial direction. Therefore, the treatment liquid can be smoothly discharged outward in the radial direction from the first annular guide portion in a continuous flow state.

The upper guard is arranged at a guide surface proximity position where the upper extension portion is close to the radial outer end of the upper guide surface. Therefore, the treatment liquid discharged from the first annular guide portion is radially outside along the upper extension portion of the upper guard close to the radial outer end of the upper guide surface while maintaining the continuous flow state. Move further towards. Therefore, it is possible to prevent the treatment liquid from colliding with the upper guard and rebounding the treatment liquid in the droplet state.

The treatment liquid passes through the treatment liquid discharge space while passing through the upper extension portion of the upper guard. Therefore, even if mist is generated from the treatment liquid transmitted through the upper extension portion for some reason, the mist adheres to the lower extension portion from above, and the mist moves out of the treatment liquid discharge space. Be blocked. Therefore, it is possible to suppress the diffusion of the mist of the treatment liquid to the outside of the treatment liquid discharge space.
When the upper guard is located close to the guide surface, the lower surface of the upper extension portion is close to the upper guide surface of the first annular guide portion, so that the lower surface of the upper extension portion and the upper surface of the first annular guide portion are located. The gap between the guide surface and the guide surface is narrow. Further, in the gap, the treatment liquid discharged from between the upper guide surface and the facing guide surface of the second annular portion flows outward in the radial direction.

Therefore, the mist of the treatment liquid passes through the gap between the lower surface of the upper extension portion and the upper guide surface and the gap between the upper guide surface and the facing guide surface of the second annular portion, and passes through the upper surface of the substrate. It is unlikely to reach the vicinity. Therefore, even if the mist generated from the treatment liquid transmitted through the upper extension portion is not received by the lower extension portion for some reason, it moves inward in the radial direction from the first guide annular portion. Is blocked. Therefore, it is possible to prevent the mist of the treatment liquid from drifting around the substrate and finally adhering to the substrate.

As described above, it is possible to efficiently suppress the contamination of the substrate caused by the treatment liquid discharged from the substrate colliding with the surrounding members.
In another embodiment of the present invention, the first annular guide portion has a lower guide surface that guides the processing liquid on the lower surface of the substrate outward in the radial direction by a centrifugal force based on the rotation of the substrate. .. The discharge space forming position is a position where the end portion of the lower extension portion in the radial direction is located below the lower guide surface of the first annular guide portion. Then, the substrate processing method includes a lower treatment liquid supply step of starting to supply the treatment liquid to the lower surface of the substrate during the execution of the upper treatment liquid discharge step, and a treatment liquid supplied to the lower surface of the substrate. The lower treatment liquid guiding step of guiding the lower treatment liquid to the lower guide surface and the treatment liquid guided to the lower guide surface by the centrifugal force based on the rotation of the substrate are extended from the lower guide surface to the upper side. It further includes a lower surface discharge step of scattering and discharging toward the lower surface of the portion.

According to this method, the treatment liquid supplied to the lower surface of the substrate is guided to the lower guide surface of the first annular guide portion radially outward from the peripheral edge portion of the substrate by the centrifugal force based on the rotation of the substrate. Will be done. Therefore, the treatment liquid supplied to the lower guide surface forms an outward flow in the radial direction and is discharged to the outside of the first annular guide portion. Since the end of the lower extension portion in the radial direction is located below the lower guide surface of the first annular guide portion, the processing liquid flowing through the lower guide surface is discharged from the first annular guide portion. Then, it scatters in the processing liquid discharge space and is received by the upper guard without traveling along the lower surface of the upper extension portion.

The supply of the treatment liquid to the lower surface of the substrate is started while the treatment liquid is being supplied to the upper surface of the substrate. Therefore, the treatment liquid discharged from the lower guide surface is received by the upper guard via the treatment liquid discharged from the upper guide surface and transmitted through the upper guard. The impact when the treatment liquid discharged from the lower guide surface is received by the upper guard is absorbed by the treatment liquid transmitted through the upper guard.
On the other hand, when the supply of the treatment liquid to the upper surface of the substrate and the supply of the treatment liquid to the lower surface of the substrate are started at the same time, the treatment liquid discharged from the lower guide surface before the treatment liquid is sufficiently transmitted to the upper guard is on the upper side. May be received by the guard.

Therefore, as compared with the case where the supply of the treatment liquid to the upper surface of the substrate and the supply of the treatment liquid to the lower surface of the substrate are started at the same time, it is possible to suppress the generation of droplets and mist due to the collision with the upper guard.
In another embodiment of the present invention, the first annular guide portion has a lower guide surface that guides the processing liquid on the lower surface of the substrate outward in the radial direction by a centrifugal force based on the rotation of the substrate. .. The discharge space forming position is located between the upper guide surface and the lower guide surface of the first annular guide portion in the vertical direction at the end of the lower extension portion inward in the radial direction. The position. Further, the substrate processing method includes a lower treatment liquid supply step of supplying the treatment liquid toward the lower surface of the substrate while rotating the substrate around the vertical axis, and a treatment liquid adhering to the lower surface of the substrate. The lower treatment liquid guiding step of guiding the lower treatment liquid to the lower guide surface by the centrifugal force based on the rotation of the substrate and the treatment liquid supplied to the lower guide surface are brought along the lower surface of the lower extension portion. However, it further includes a lower treatment liquid discharge step of discharging from the lower guide surface.

According to this method, the treatment liquid supplied to the lower surface of the substrate is placed on the lower guide surface of the first annular guide portion radially outward from the peripheral edge portion of the substrate by the centrifugal force based on the rotation of the substrate. You will be guided. Therefore, the treatment liquid on the lower guide surface forms a flow outward in the radial direction and is discharged to the outside of the first annular guide portion. The lower guard is located at a discharge space forming position where the end of the lower extending portion in the radial direction is located between the upper guide surface and the lower guide surface of the first annular guide portion. Therefore, the treatment liquid discharged from the first annular guide portion scatters from the first annular guide portion below the lower extension portion of the lower guard and is received by the lower guard. On the other hand, when the treatment liquid on the upper guide surface is discharged from the first annular guide portion, it scatters in the discharge space and is received by the upper guard.

Therefore, the treatment liquid discharged from the upper surface of the substrate and the treatment liquid discharged from the upper surface of the substrate are discharged from the lower surface of the substrate while efficiently suppressing the contamination of the substrate caused by the collision of the treatment liquid discharged from the upper surface of the substrate with the surrounding members. The treatment liquid can be received by a separate guard.
In another embodiment of the present invention, the substrate processing method comprises an intermediate guard having an intermediate extension portion that faces the upper extension portion from below and faces the lower extension portion from above and extends in the radial direction. An intermediate guard arranging step for arranging the intermediate guard and a guard for arranging the intermediate guard at a guard contact position where the intermediate extension portion contacts the upper extension portion to receive the treatment liquid discharged from the first annular guide portion. It further includes a guard switching step of switching.

According to this method, by arranging the intermediate guard at the guard contact position where the intermediate extension portion contacts the upper extension portion, the treatment liquid flowing outward in the radial direction along the lower surface of the upper extension portion is intermediate. Guided to the underside of the extension. Therefore, by arranging the intermediate guard at the guard contact position, it is possible to switch the extension portion along which the processing liquid discharged from the upper surface of the substrate is placed. Therefore, it is possible to switch the guard that receives the processing liquid discharged from the upper surface of the substrate while efficiently suppressing the contamination of the substrate caused by the treatment liquid discharged from the upper surface of the substrate colliding with the surrounding members. ..

In another embodiment of the present invention, in the substrate processing method, a capture guard facing from above is arranged on the upper extension portion to capture the mist of the treatment liquid generated by the upper treatment liquid discharge step. The capture space forming step of forming a space between the capture guard and the upper extension portion is further included.
According to this method, by arranging the capture guard in the capture space, it is possible to capture the mist of the treatment liquid generated by the collision between the treatment liquid and the upper surface of the substrate. As a result, contamination of the substrate caused by mist generated by supplying the treatment liquid to the upper surface of the substrate can be suppressed.

FIG. 1 is a schematic plan view showing the layout of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit provided in the substrate processing apparatus. FIG. 3 is a cross-sectional view of the outer annular member and the inner annular member provided in the processing unit. FIG. 4 is a top view of the outer annular member and the inner annular member. FIG. 5A is a schematic view showing an example of the arrangement of a plurality of guards provided in the processing unit, and shows the arrangement of the plurality of guards when receiving the processing liquid discharged from the substrate. FIG. 5B is a schematic view showing an example of the arrangement of the plurality of guards, and shows the arrangement of the plurality of guards when receiving the processing liquid discharged from the substrate. FIG. 5C is a schematic view showing an example of the arrangement of the plurality of guards, and shows the arrangement of the plurality of guards when receiving the processing liquid discharged from the substrate. FIG. 6 is a cross-sectional view taken along the line VI-VI shown in FIG. FIG. 7A is a schematic plan view of a chuck pin provided in the processing unit, and shows a state in which the chuck pin is located at a closed position. FIG. 7B is a schematic plan view of the chuck pin provided in the processing unit, and shows a state in which the chuck pin is located in the open position. FIG. 8A is a partial cross-sectional view taken along the line VIII-VIII shown in FIG. 4, showing a state in which the connecting member provided in the processing unit is located at a retracted position below the first substrate delivery position. FIG. 8B is a partial cross-sectional view taken along the line VIII-VIII shown in FIG. 4, showing a state in which the connecting member is located at the second substrate delivery position. FIG. 9A is a partial cross-sectional view taken along the line IX-IX shown in FIG. 4, showing a state when the connecting member is located at the retracted position. FIG. 9B is a partial cross-sectional view taken along the line IX-IX shown in FIG. 4, showing a state when the connecting member is located at the second substrate delivery position. FIG. 10 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus. FIG. 11 is a flow chart for explaining an example of substrate processing by the substrate processing apparatus. FIG. 12A is a schematic view for explaining the state of the substrate processing. FIG. 12B is a schematic view for explaining the state of the substrate processing. FIG. 12C is a schematic view for explaining the state of the substrate processing. FIG. 12D is a schematic view for explaining the state of the substrate processing. FIG. 12E is a schematic view for explaining the state of the substrate processing. FIG. 13 is a schematic view for explaining a first modification of the substrate processing. FIG. 14A is a schematic view for explaining a second modification of the substrate processing. FIG. 14B is a schematic view for explaining a second modification of the substrate processing. FIG. 15 is a schematic view for explaining a third modification of the substrate processing. FIG. 16 is a cross-sectional view of the periphery of the peripheral edge of the substrate in the processing unit according to the second embodiment of the present invention. FIG. 17 is a cross-sectional view of the periphery of the peripheral edge of the substrate in the processing unit according to the third embodiment of the present invention. FIG. 18 is a cross-sectional view of the periphery of the peripheral edge of the substrate in the processing unit according to the fourth embodiment of the present invention. FIG. 19 is a schematic view for explaining the arrangement of the plurality of guards when supplying the processing liquid to the substrate in the processing unit according to the fourth embodiment. FIG. 20 is a cross-sectional view of the periphery of the peripheral edge of the substrate in the processing unit according to the fifth embodiment of the present invention. FIG. 21 is a cross-sectional view of the periphery of the peripheral edge of the substrate in the processing unit according to the sixth embodiment of the present invention. FIG. 22 is a cross-sectional view of the periphery of the peripheral edge of the substrate in the processing unit according to the seventh embodiment of the present invention. FIG. 23 is a cross-sectional view of the periphery of the peripheral edge of the substrate in the processing unit according to the eighth embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
<First Embodiment>
FIG. 1 is a schematic plan view showing the layout of the substrate processing apparatus 1 according to the first embodiment of the present invention.
The substrate processing device 1 is a single-wafer type device that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disc-shaped substrate.

The substrate processing apparatus 1 includes a plurality of processing units 2 for processing the substrate W with a fluid, a load port LP on which a carrier C accommodating a plurality of substrates W processed by the processing unit 2 is mounted, and a load port LP. It includes transfer robots IR and CR that transfer the substrate W between the substrate processing unit 2 and the processing unit 2, and a controller 3 that controls the substrate processing apparatus 1.
The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The transfer robot CR is an example of a substrate transfer unit. The plurality of processing units 2 have, for example, a similar configuration. As will be described in detail later, the treatment liquid supplied to the substrate W in the treatment unit 2 includes a chemical solution, a rinse solution, a drying accelerator solution, and the like.

The transfer robot IR includes a hand H1 that horizontally supports the substrate W. The transfer robot IR moves the hand H1 horizontally and raises and lowers it. Similarly, the transfer robot CR includes a hand H2 that horizontally supports the substrate W. The transfer robot CR moves the hand H2 horizontally and raises and lowers it.
Each processing unit 2 includes a chamber 4 and a processing cup 7 arranged in the chamber 4, and processes the substrate W in the processing cup 7. The chamber 4 is formed with an entrance (not shown) for the hand H2 of the transfer robot CR to carry in and out the substrate W. The chamber 4 is provided with a shutter unit (not shown) that opens and closes the doorway.

FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2. The processing unit 2 includes a spin chuck 5, a processing cup 7, a first moving nozzle 8, a second moving nozzle 9, a third moving nozzle 10, a fourth moving nozzle 11, a lower surface nozzle 12, and an outer ring. The member 13 and the inner annular member 14 are included.
The spin chuck 5 rotates the substrate W around the vertical substrate rotation axis A1 (vertical axis) passing through the central portion of the substrate W while holding the substrate W horizontally. The spin chuck 5 includes a plurality of chuck pins 20, a spin base 21, a rotating shaft 22, and a spin motor 23 that applies a rotational force to the rotating shaft 22. The rotating shaft 22 is a hollow shaft. The rotating shaft 22 extends in the vertical direction along the substrate rotating axis A1. The substrate rotation axis A1 is a vertical axis that passes through the central portion of the substrate W. A spin base 21 is coupled to the upper end of the rotating shaft 22.

The spin base 21 has a disk shape along the horizontal direction. On the upper surface of the spin base 21, a plurality of chuck pins 20 for gripping the peripheral edge of the substrate W are arranged at intervals in the circumferential direction of the spin base 21 (which is also the rotation direction of the substrate W) (see a diagram to be described later). See also 4). The spin base 21 and the plurality of chuck pins 20 form a substrate holding unit that holds the substrate W horizontally. The board holding unit is also called a board holder.

The spin motor 23 applies a rotational force to the rotating shaft 22. The spin base 21 is rotated by rotating the rotating shaft 22 by the spin motor 23. As a result, the substrate W is rotated around the substrate rotation axis A1. The spin motor 23 is an example of a substrate rotation unit that rotates the substrate W around the substrate rotation axis A1.
In the following, the inner side of the radial direction R centered on the substrate rotation axis A1 is referred to as "diameter inner RI", and the radial outer side centered on the substrate rotation axis A1 is referred to as "diameter outer direction RO". ..

The first moving nozzle 8 is a chemical solution nozzle (upper chemical solution supply unit, upper treatment liquid supply unit) that supplies (discharges) a chemical solution such as DHF (dilute hydrofluoric acid) toward the upper surface of the substrate W held by the spin chuck 5. This is an example.
The first moving nozzle 8 is moved in the horizontal direction and the vertical direction by the first nozzle moving unit 35. The first moving nozzle 8 can move between the center position and the home position (retracted position) in the horizontal direction.

When the first moving nozzle 8 is located at the center position, the first moving nozzle 8 faces the center of rotation on the upper surface of the substrate W. The rotation center of the upper surface of the substrate W is a position where the upper surface of the substrate W intersects with the substrate rotation axis A1. When the first moving nozzle 8 is located at the home position, it does not face the upper surface of the substrate W and is located outside the processing cup 7 in a plan view.
The first moving nozzle 8 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.

The first nozzle moving unit 35 includes, for example, a rotation shaft (not shown) along the vertical direction, an arm (not shown) that is coupled to the rotation shaft and extends horizontally, and the rotation shaft is moved up and down or rotated. Includes a rotating shaft drive unit (not shown) that moves.
The rotation shaft drive unit swings the arm by rotating the rotation shaft around a vertical rotation axis. Further, the rotating shaft drive unit moves the arm up and down by moving the rotating shaft up and down along the vertical direction. The first moving nozzle 8 is fixed to the arm. The first moving nozzle 8 moves in the horizontal direction and the vertical direction according to the swinging and raising / lowering of the arm.

A first upper chemical solution supply pipe 40 for guiding the chemical solution to the first moving nozzle 8 is connected to the first moving nozzle 8. When the first upper chemical solution valve 50 interposed in the first upper chemical solution supply pipe 40 is opened, the chemical solution is discharged from the first moving nozzle 8 toward the central region on the upper surface of the substrate W in a continuous flow. The central region of the upper surface of the substrate W is a region on the upper surface of the substrate W that includes the center of rotation of the substrate W and its periphery.

The second moving nozzle 9 is a chemical solution nozzle (upper side) that supplies (discharges) a chemical solution such as SC1 (ammonia-hydrogen peroxide mixture) toward the upper surface of the substrate W held by the spin chuck 5. This is an example of a chemical solution supply unit and an upper treatment solution supply unit).
The second moving nozzle 9 is moved in the horizontal direction and the vertical direction by the second nozzle moving unit 36. The second moving nozzle 9 can move between the center position and the home position (retracted position) in the horizontal direction.

When the second moving nozzle 9 is located at the center position, it faces the rotation center of the upper surface of the substrate W. When the second moving nozzle 9 is located at the home position, it does not face the upper surface of the substrate W and is located outside the processing cup 7 in a plan view. The second moving nozzle 9 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.
The second nozzle moving unit 36 has the same configuration as the first nozzle moving unit 35. That is, the second nozzle moving unit 36 includes, for example, a rotation shaft along the vertical direction (not shown), an arm coupled to the rotation shaft and the second moving nozzle 9 and extending horizontally (not shown). Includes a rotating shaft drive unit (not shown) that raises and lowers and rotates the rotating shaft.

A second upper chemical solution supply pipe 41 for guiding the chemical solution to the second moving nozzle 9 is connected to the second moving nozzle 9. When the second upper chemical solution valve 51 interposed in the second upper chemical solution supply pipe 41 is opened, the chemical solution is continuously discharged from the second moving nozzle 9 toward the central region on the upper surface of the substrate W.
The chemical solution is not limited to DHF and SC1. That is, in the present specification, the chemical solution is sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide solution, organic acid (for example, citric acid, oxalic acid, etc.), organic alkali (for example, TMAH: tetramethylammonium). It may be a liquid containing at least one of (hydrochloride, etc.), a surfactant, and a corrosion inhibitor. Examples of the chemical solution in which these are mixed include SPM (sulfuric acid / hydrogen peroxide mixture) and the like in addition to SC1.

The third moving nozzle 10 is a rinse liquid nozzle (rinse liquid supply unit, treatment liquid supply unit) that supplies (discharges) a rinse liquid such as DIW (Deionized Water) toward the upper surface of the substrate W held by the spin chuck 5. This is an example.
The third moving nozzle 10 is moved in the horizontal direction and the vertical direction by the third nozzle moving unit 37. The third moving nozzle 10 can move between the center position and the home position (retracted position) in the horizontal direction.

When the third moving nozzle 10 is located at the center position, it faces the rotation center of the upper surface of the substrate W. When the third moving nozzle 10 is located at the home position, it does not face the upper surface of the substrate W and is located outside the processing cup 7 in a plan view. The third moving nozzle 10 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.
An upper rinse liquid supply pipe 42 that guides the rinse liquid to the third moving nozzle 10 is connected to the third moving nozzle 10. When the upper rinse solution valve 52 interposed in the upper rinse solution supply pipe 42 is opened, the chemical solution is discharged from the third moving nozzle 10 toward the central region on the upper surface of the substrate W in a continuous flow.

The rinse solution is not limited to DIW. That is, in the present specification, the rinse liquid is carbonated water, electrolytic ionized water, hydrochloric acid water having a dilution concentration (for example, about 1 ppm to 100 ppm), ammonia water having a dilution concentration (for example, about 1 ppm to 100 ppm), and reduced water (hydrogen water). ) Etc. may be used.
The fourth moving nozzle 11 is an example of a drying accelerator (upper drying accelerator supply unit, upper treatment liquid supply unit) that supplies a drying accelerator such as IPA (isopropyl alcohol) to the upper surface of the substrate W. The drying accelerating liquid is a liquid that accelerates the drying of the substrate W by supplying the substrate W with a gas before the substrate W is dried. The fourth moving nozzle 11 is also an example of a gas nozzle (upper gas supply unit) that supplies a gas such as _{nitrogen gas (N 2} gas) to the upper surface of the substrate W.

The fourth moving nozzle 11 is moved in the horizontal direction and the vertical direction by the fourth nozzle moving unit 38. The fourth moving nozzle 11 can move between the center position and the home position (retracted position) in the horizontal direction.
When the fourth moving nozzle 11 is located at the center position, it faces the rotation center of the upper surface of the substrate W. When the fourth moving nozzle 11 is located at the home position, it does not face the upper surface of the substrate W and is located outside the processing cup 7 in a plan view. The fourth moving nozzle 11 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.

The fourth nozzle moving unit 38 has the same configuration as the first nozzle moving unit 35. That is, the fourth nozzle moving unit 38 includes, for example, a rotation shaft along the vertical direction (not shown), an arm coupled to the rotation shaft and the fourth moving nozzle 11 and extending horizontally (not shown). Includes a rotating shaft drive unit (not shown) that raises and lowers and rotates the rotating shaft.

An upper drying accelerating liquid pipe 43 for guiding the drying accelerating liquid to the fourth moving nozzle 11 is connected to the fourth moving nozzle 11. When the upper drying accelerator valve 53 interposed in the upper drying accelerator pipe 43 is opened, the drying accelerator 11 is discharged from the fourth moving nozzle 11 toward the central region on the upper surface of the substrate W in a continuous flow.
A plurality of gas pipes (first gas pipe 91, second gas pipe 92, and third gas pipe 93) for guiding gas to the fourth moving nozzle 11 are connected to the fourth moving nozzle 11. A plurality of gas valves (first gas valve 96A, second gas valve 97A, and third gas valve 98A) are provided in the plurality of gas pipes (first gas pipe 91, second gas pipe 92, and third gas pipe 93), respectively. ) Is intervened. The flow path in each gas pipe is opened and closed by a corresponding gas valve.

The fourth moving nozzle 11 has a central discharge port 11a that discharges the drying accelerating liquid guided from the upper drying accelerating liquid pipe 43 in a continuous flow along the vertical direction.
Further, the fourth moving nozzle 11 has a linear flow discharge port 11b, a horizontal flow discharge port 11c, and a gradient flow discharge port 11d as gas discharge ports for discharging gas.
The linear flow discharge port 11b discharges the gas supplied from the first gas pipe 91 in a straight line along the vertical direction. The horizontal flow discharge port 11c radially discharges the gas supplied from the second gas pipe 92 around the fourth moving nozzle 11 along the horizontal direction. The gradient flow discharge port 11d radially discharges the gas supplied from the third gas pipe 93 around the fourth moving nozzle 11 along the diagonally downward direction.

The first gas pipe 91 is provided with a mass flow controller 96B for accurately adjusting the flow rate of the gas flowing in the first gas pipe 91. The mass flow controller 96B has a flow rate control valve. The second gas pipe 92 is provided with a flow rate variable valve 97B for adjusting the flow rate of the gas flowing in the second gas pipe 92. The third gas pipe 93 is interposed with a flow rate variable valve 98B for adjusting the flow rate of the gas flowing in the third gas pipe 93.

Filters 96C, 97C, and 98C for removing foreign substances are interposed in the first gas pipe 91, the second gas pipe 92, and the third gas pipe 93, respectively.
The drying accelerator is not limited to IPA, and may be any one that is miscible with the rinse solution and has higher volatility than the rinse solution. For example, the drying accelerator may be a mixed solution of IPA and DIW, or may be a mixed solution of IPA and HFE.

The gas discharged from the fourth moving nozzle 11 is not limited to nitrogen gas. The gas discharged from the fourth moving nozzle 11 may be air. Further, the gas discharged from the fourth moving nozzle 11 may be an inert gas other than nitrogen gas.
The inert gas is not limited to nitrogen gas, but is a gas that is inert to the upper surface of the substrate W and the pattern formed on the upper surface of the substrate W. Examples of the inert gas include rare gases such as argon in addition to nitrogen gas.

The lower surface nozzle 12 is inserted into a through hole 21a that opens at the center of the upper surface of the spin base 21 and a hollow rotating shaft 22. The discharge port 12a of the lower surface nozzle 12 is exposed from the upper surface of the spin base 21. The discharge port 12a of the lower surface nozzle 12 faces the central region of the lower surface (lower surface) of the substrate W from below. The central region of the lower surface of the substrate W is a region on the lower surface of the substrate W that includes the center of rotation of the substrate W and its periphery.

One end of a common pipe 49 that commonly guides the chemical solution, the rinsing solution, and the drying accelerating solution to the lower surface nozzle 12 is connected to the lower surface nozzle 12. At the other end of the common pipe 49, a first lower chemical liquid pipe 44 for guiding a chemical liquid such as DHF to the common pipe 49 and a second lower chemical liquid pipe 45 for guiding a chemical liquid such as SC1 to the common pipe 49 are common. The lower rinse liquid pipe 46 for guiding the rinse liquid such as DIW is connected to the pipe 49, and the lower drying accelerator liquid pipe 47 for guiding the drying accelerator liquid such as IPA is connected to the common pipe 49.

When the first lower chemical solution valve 54 interposed in the first lower chemical solution pipe 44 is opened, the chemical solution such as DHF is discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W in a continuous flow. .. When the second lower chemical solution valve 55 interposed in the second lower chemical solution pipe 45 is opened, the chemical solution such as SC1 is discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W in a continuous flow. ..
When the lower rinse liquid valve 56 interposed in the lower rinse liquid pipe 46 is opened, the rinse liquid such as DIW is discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W in a continuous flow. When the lower drying accelerator valve 57 interposed in the lower drying accelerator pipe 47 is opened, the drying accelerator such as IPA is discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W in a continuous flow. Will be done.

The lower gas flow path 90 is formed by the space between the lower surface nozzle 12 and the through hole 21a of the spin base 21. The lower gas flow path 90 is connected to the lower gas pipe 48 inserted in the space between the inner peripheral surface of the rotating shaft 22 and the lower surface nozzle 12. When the lower gas valve 58 interposed in the lower gas pipe 48 is opened, a gas such as nitrogen gas is discharged from the lower gas flow path 90 toward the portion around the central portion of the lower surface of the substrate W. To.

The gas discharged from the lower gas flow path 90 is not limited to nitrogen gas. The gas discharged from the lower gas flow path 90 may be air. Further, the gas discharged from the lower gas flow path 90 may be an inert gas other than nitrogen gas.
The lower surface nozzle 12 is an example of a chemical solution nozzle (lower chemical solution supply unit) that supplies a chemical solution to the lower surface of the substrate W. The lower surface nozzle 12 is an example of a rinse liquid nozzle (lower rinse liquid supply unit) that supplies the rinse liquid to the lower surface of the substrate W. The bottom surface nozzle 12 is also an example of a drying accelerating liquid nozzle (lower side drying pretreatment supply unit) that supplies the drying accelerating liquid to the lower surface of the substrate W. That is, the lower surface nozzle 12 is also a lower processing liquid supply unit that supplies the processing liquid to the lower surface of the substrate.

The lower gas flow path 90 is also an example of a gas nozzle (lower gas supply unit) that supplies gas toward the lower surface of the substrate W.
The processing cup 7 includes a plurality of guards 71 that receive the liquid scattered outward from the substrate W held by the spin chuck 5, and a plurality of cups 72 that receive the liquid guided downward by the plurality of guards 71.

In this embodiment, three guards 71 (first guard 71A, second guard 71B and third guard 71C) and three cups 72 (first cup 72A, second cup 72B and third cup 72C) are provided. An example is shown.
Each of the first cup 72A, the second cup 72B, and the third cup 72C has the form of an annular groove that is open upward.

The first guard 71A is arranged so as to surround the spin base 21 in a plan view. The second guard 71B is arranged above the first guard 71A and is arranged so as to surround the spin base 21 in a plan view. The third guard 71C is arranged above the second guard 71B and is arranged so as to surround the spin base 21 in a plan view.
The first guard 71A, the second guard 71B, and the third guard 71C each have a substantially cylindrical shape, and the upper end portion of each guard 71 is inclined inward toward the radial inward RI. ing.

Specifically, the first guard 71A includes a first tubular portion 75A surrounding the spin base 21 in a plan view, and an annular first extending portion 76A extending radially inward RI from the upper end of the first tubular portion 75A. And include. The first extension portion 76A is inclined with respect to the horizontal direction so as to be upward toward the radial inward RI. The tip of the first extension 76A of the first guard 71A (the end of the radial inward RI) is the end face of the radial inward RI that inclines downward toward the radial outer RO (the first). It has one inclined end face 77).

The inclination angle of the first extending portion 76A with respect to the horizontal direction is preferably larger than 0 ° and 45 ° or less. It is more preferable that the inclination angle of the first extending portion 76A with respect to the horizontal direction is 5 ° or more and 20 ° or less.
The second guard 71B includes a second tubular portion 75B surrounding the spin base 21 in a plan view, and an annular second extending portion 76B extending radially inward RI from the upper end of the second tubular portion 75B. .. The second tubular portion 75B is arranged in the outer RO in the radial direction with respect to the first tubular portion 75A. The second extension 76B faces the first extension 76A from above. The second extension portion 76B is inclined with respect to the horizontal direction so as to be upward toward the radial inward RI. The tip of the second extension 76B of the second guard 71B (the end of the radial inward RI) is a radial inward end face (second) that inclines downward toward the radial inward RO. It has an inclined end face 78).

The inclination angle of the second extending portion 76B with respect to the horizontal direction is preferably larger than 0 ° and 45 ° or less. It is more preferable that the inclination angle of the second extending portion 76B with respect to the horizontal direction is 5 ° or more and 20 ° or less.
The third guard 71C has a third tubular portion 75C surrounding the spin base 21 in a plan view, and an annular third extending portion 76C extending radially inward RI from the upper end of the third tubular portion 75C. .. The third tubular portion 75C is arranged at the outer RO in the radial direction with respect to the second tubular portion 75B. The third extension 76C faces the second extension 76B from above. The third extension portion 76C is inclined with respect to the horizontal direction so as to be upward toward the radial inward RI.

The inclination angle of the third extending portion 76C with respect to the horizontal direction is preferably larger than 0 ° and 45 ° or less. It is more preferable that the inclination angle of the third extending portion 76C with respect to the horizontal direction is 5 ° or more and 20 ° or less.
The first cup 72A receives the processing liquid guided downward by the first guard 71A. The second cup 72B is integrally formed with the first guard 71A, and receives the treatment liquid guided downward by the second guard 71B. The third cup 72C is integrally formed with the second guard 71B, and receives the treatment liquid guided downward by the third guard 71C.

A plurality of treatment liquid recovery paths (not shown) are connected to the lower ends of the first cup 72A, the second cup 72B, and the third cup 72C, respectively. The treatment liquids received by the first cup 72A, the second cup 72B and the third cup 72C are recovered via the corresponding treatment liquid recovery paths, respectively. An exhaust unit 25 that exhausts the inside of each cup 72 is connected to the first cup 72A, the second cup 72B, and the third cup 72C.

The exhaust unit 25 includes, for example, a plurality of exhaust pipes (not shown) coupled to the lower ends of the plurality of cups 72, and a plurality of pumps (not shown) for sucking the inside of the exhaust pipes, respectively. The exhaust unit 25 is also referred to as an exhaust pump.
FIG. 3 is a cross-sectional view of the periphery of the outer annular member 13 and the inner annular member 14. FIG. 4 is a top view of the outer annular member 13 and the inner annular member 14.

The outer annular member 13 is an annular member that surrounds the substrate W in a plan view. The outer annular member 13 is an example of the first annular guide portion. The inner diameter of the outer annular member 13 is slightly larger than the outer diameter of the substrate W. The outer annular member 13 is arranged at a position spaced upward from the upper surface of the spin base 21.
The position of the outer annular member 13 with respect to the spin base 21 is fixed via a plurality of (four in this embodiment) fixing members 16. The fixing member 16 is a columnar shape extending in the vertical direction. The plurality of fixing members 16 are arranged at equal intervals in the rotation direction (circumferential direction) of the substrate W.

The outer annular member 13 has an upper surface, a lower surface, an end surface of the radial inner RI (inner end surface 13a), and an end surface of the radial outer RO (outer end surface 13b).
The upper surface and the lower surface of the outer annular member 13 are annular in a plan view, respectively. The upper surface of the outer annular member 13 is an annular member that guides the treatment liquid existing on the peripheral edge of the upper surface of the substrate W to the outer RO in the radial direction from the peripheral edge of the upper surface of the substrate W by centrifugal force based on the rotation of the substrate W. The upper guide surface 60. The upper guide surface 60 is flat in the horizontal direction.

The lower surface of the outer annular member 13 is an annular lower guide surface 61 that guides the treatment liquid existing on the peripheral edge of the lower surface of the substrate W to the outer RO in the radial direction from the peripheral edge of the lower surface of the substrate W. The lower guide surface 61 is connected to the lower flat surface 61A which is connected to the outer end surface 13b and is flat in the horizontal direction, and is connected to the inner end surface 13a and the lower flat surface 61A. Includes a lower inclined surface 61B that inclines downward.

The inner annular member 14 is an annular member located in the inner RI in the radial direction with respect to the outer annular member 13 in a plan view. The inner annular member 14 is an example of the inner annular portion. The inner annular member 14 is arranged at a position spaced upward from the upper surface of the substrate W. The inner annular member 14 is connected to the spin base 21 via a plurality of (three in this embodiment) connecting members 17, and is supported from below by a single supporting member 18. The three connecting members 17 and the supporting members 18 are arranged at equal intervals in the rotation direction of the substrate W.

The inner annular member 14 has an upper surface, a lower surface, an end surface of the radial inner RI (inner end surface 14a), and an end surface of the radial outer RO (outer end surface 14b).
The upper surface and the lower surface of the inner annular member 14 are annular in a plan view, respectively. The upper surface of the inner annular member 14 is horizontally flat.
The lower surface of the inner annular member 14 includes an annular inner guide surface 63 for guiding the treatment liquid flowing in the radial outer RO on the peripheral edge of the upper surface of the substrate W to the radial outer RO, and the inner annular member 14 for the treatment liquid. It includes an inner bounce suppressing surface 64 that suppresses rebounding to the radial inward RI when a collision occurs.

The inner guide surface 63 is connected to the outer end surface 14b and is horizontally flat. The inner bounce suppressing surface 64 is an inclined surface that is connected to the inner end surface 14a and the inner guide surface 63 and is inclined downward toward the outer RO in the radial direction.
An outer annular guide portion 15 is connected to the tip of the third extension portion 76C of the third guard 71C. That is, the outer annular guide portion 15 is integrally formed with the third extension portion 76C of the third guard 71C. The outer annular guide portion 15 is annular in a plan view. The outer annular guide portion 15 is an example of the second annular guide portion.

The outer annular guide portion 15 has a stepped shape that goes upward toward the radial inward RI. The outer annular guide portion 15 has a first horizontal portion 80, an inclined portion 81, and a second horizontal portion 82. The first horizontal portion 80 extends horizontally in the radial inward RI from the third extending portion 76C. The second horizontal portion 82 extends horizontally above the first horizontal portion 80. The inclined portion 81 connects the first horizontal portion 80 and the second horizontal portion 82, and extends upward toward the radial inward RI.

The first horizontal portion 80 has an opposed guide surface 80a that faces the upper guide surface 60 of the outer annular member 13 and guides the processing liquid existing on the upper guide surface 60 to the radial outer RO together with the upper guide surface 60. The inclined portion 81 has an outer rebound suppressing surface 81a that suppresses rebounding to the radial inward RI when the treatment liquid collides with the outer annular guide portion 15. The second horizontal portion 82 has a separation surface 82a that is separated from the upper guide surface 60 above the facing guide surface 80a.

The facing guide surface 80a, the outer rebound suppressing surface 81a, and the separating surface 82a form the lower surface of the outer annular guide portion 15. The facing guide surface 80a and the separation surface 82a are flat in the horizontal direction. The facing guide surface 80a is connected to the radial inner end of the lower surface 76c of the third extending portion 76C of the third guard 71C and the radial outer end of the outer rebound suppressing surface 81a.
The outer bounce suppressing surface 81a is connected to the radial inner end of the facing guide surface 80a and the radial outer end of the separation surface 82a, and is inclined downward toward the radial outer RO. ing. The separation surface 82a is connected to the outer end in the radial direction of the outer rebound suppressing surface 81a and the lower end of the end surface (inner end surface 15a) of the radial inner RI of the outer annular guide portion 15.

With reference to FIG. 2 again, the processing unit 2 includes a guard elevating unit 74 that separately elevates and elevates the first guard 71A, the second guard 71B, and the third guard 71C. Therefore, the arrangement of the plurality of guards 71 can be appropriately changed when the substrate is processed in the processing unit 2.
The guard elevating unit 74 includes, for example, a plurality of ball screw mechanisms (not shown) coupled to the plurality of guards 71, and a plurality of motors (not shown) that apply driving force to each of the plurality of ball screw mechanisms. Including. The guard elevating unit 74 is also referred to as a guard lifter.

The guard elevating unit 74 raises and lowers the second guard 71B and the first guard 71A between the lower position and the upper position. When the guard 71 is located in the upper position, the radial inner end of the guard 71 is located above the upper surface of the substrate W. When the guard 71 is located in the lower position, the radial inner end of the guard 71 is located below the upper surface of the spin base 21 (below the lower surface of the substrate W).

The guard elevating unit 74 raises and lowers the third guard 71C between the upper position and the position close to the guide surface. The guide surface proximity position is a position above the lower position. The guide surface proximity position is the position of the third guard 71C in FIG. Since the outer annular guide portion 15 extending radially inwardly from the outer edge of the spin base 21 is connected to the tip of the third extension portion 76C of the third guard 71C, the third guard 71C is in the lower position. Can't move to.

With reference to FIG. 3 again, the guide surface proximity position is a position where the lower surface 76c of the third extension portion 76C is close to the radial outer end of the upper guide surface 60. When the third guard 71C is located close to the guide surface, the opposite guide surface 80a is close to the upper guide surface 60. A processing liquid passage 65 through which the processing liquid can pass is formed between the facing guide surface 80a and the upper guide surface 60.
The width of the treatment liquid passage 65 in the vertical direction (treatment liquid passage width D1) is larger than the width in the horizontal direction of the gap between the peripheral edge of the substrate W and the inner end surface 13a of the outer annular member 13 (lower gap width D2). Is also big. The treatment liquid passage width D1 is larger than the horizontal width (upper gap width D3) of the gap between the outer end surface 14b of the inner annular member 14 and the inner end surface 15a of the outer annular guide portion 15.

The treatment liquid passage width D1 is, for example, 1.5 to 5.0 mm. The treatment liquid passage width D1 is preferably 1.5 mm to 2.0 mm. The lower gap width D2 and the upper gap width D3 are, for example, 1.0 mm, respectively.
The arrangement of the plurality of guards 71 will be described with reference to FIGS. 5A to 5C. FIG. 5A shows a state in which the arrangement of the plurality of guards 71 when the third guard 71C receives the processing liquid discharged from the substrate W is the first arrangement.

In the first arrangement, the third guard 71C is arranged at a position close to the guide surface, the second guard 71B is arranged at the discharge space forming position, and the first guard 71A is arranged at a lower position. In FIG. 5A, the first guard 71A located at the lower position is in contact with the second guard 71B, but the lower position may be a position not in contact with the second guard 71B.
The discharge space forming position is a position between the upper position and the lower position. The discharge space forming position is a position where the radial inner end portion of the second extending portion 76B is located below the lower guide surface 61 of the outer annular member 13. The discharge space forming position is preferably a position where the radial inner end of the second extending portion 76B is at the same height as the upper surface of the spin base 21 or a position lower than the upper surface of the spin base 21.

When the second guard 71B is located at the discharge space forming position, the second extension portion 76B faces the third extension portion 76C from below at intervals and approaches the spin base 21 from the radial outer RO. .. When the second guard 71B is located at the discharge space forming position, a space extending in the radial direction R between the third extension portion 76C of the third guard 71C and the second extension portion 76B of the second guard 71B (treatment). A liquid discharge space 66) is formed.

Since the second extension portion 76B is close to the spin base 21 from the radial outer RO and the third extension portion 76C is integrally formed with the outer annular guide portion 15, the treatment liquid discharge space 66 is formed. It is isolated from the external space. When the arrangement of the plurality of guards 71 is the first arrangement, the external space is a space above the third extension portion 76C and a space below the second extension portion 76B.
Since the third guard 71C is located close to the guide surface, the processing liquid passage 65 is filled with the processing liquid flowing on the upper guide surface 60. Since the facing guide surface 80a is connected to the lower surface of the third extension portion 76C, the treatment liquid discharged from the treatment liquid passage 65 (toward the outer RO in the radial direction from the upper guide surface 60) is the third extension. It moves to the outer RO in the radial direction along the lower surface 76c of the setting portion 76C. After that, the treatment liquid is guided to the third cup 72C by the inner peripheral surface of the third tubular portion 75C (see also FIG. 2).

On the other hand, the processing liquid flowing on the lower surface of the substrate W scatters from the lower guide surface 61 toward the outer RO in the radial direction. The treatment liquid scattered from the lower guide surface 61 is received by the third extending portion 76C or the third tubular portion 75C. Both the treatment liquid discharged from the upper guide surface 60 and the treatment liquid discharged from the lower guide surface 61 pass through the treatment liquid discharge space 66.
When the arrangement of the plurality of guards 71 is the first arrangement, the third guard 71C functions as an upper guard and the second guard 71B functions as a lower guard.

FIG. 5B shows a state in which the arrangement of the plurality of guards 71 when the second guard 71B receives the processing liquid discharged from the substrate W is the second arrangement.
In the second arrangement, the third guard 71C is arranged at a position close to the guide surface, the second guard 71B is arranged at the guard contact position, and the first guard 71A is arranged at the exhaust space forming position.
When the second guard 71B is located at the guard contact position, the radial inner end of the second extension 76B contacts the lower surface 76c of the third extension 76C.

The discharge space forming position is a position where the radial inner end portion of the first extension portion 76A is located below the lower guide surface 61 of the outer annular member 13. The discharge space forming position is preferably a position where the radial inner end portion of the first extension portion 76A is at the same height as the upper surface of the spin base 21 or a position lower than the upper surface of the spin base 21.
When the first guard 71A is located at the discharge space forming position, the first extension portion 76A faces the third extension portion 76C of the third guard 71C from below at intervals, and is radially out of the spin base 21. Close to the direction RO. Strictly speaking, since the second extension 76B of the second guard 71B is interposed between the first extension 76A and the third extension 76C, the first extension 76A is the first. It faces the third extension portion 76C via the second extension portion 76B.

When the first guard 71A is located at the discharge space forming position, the treatment liquid discharge space 66 is the third extension portion 76C (upper extension portion) of the third guard 71C and the first extension portion 76A of the first guard 71A. It is formed between (lower extension part). The second extension portion 76B of the second guard 71B is located in the treatment liquid discharge space 66.
Since the first extension portion 76A is close to the spin base 21 from the radial outer RO and the third extension portion 76C is integrally formed with the outer annular guide portion 15, the treatment liquid discharge space 66 is formed. It is isolated from the external space. The external space when the arrangement of the plurality of guards 71 is the second arrangement is a space above the third extension portion 76C and a space below the first extension portion 76A.

When the arrangement of the plurality of guards 71 is the second arrangement, the treatment liquid discharged from the treatment liquid passage 65 (toward the outer RO in the radial direction from the upper guide surface 60) is sent to the lower surface 76c of the third extension portion 76C. It flows along the radial outward RO.
The radial inner end of the second extension 76B of the second guard 71B is in contact with the lower surface 76c of the third extension 76C, and the second inclined end surface 78 of the second extension 76B is It is inclined downward toward the outward RO in the radial direction. Therefore, the treatment liquid flowing along the lower surface 76c of the third extension 76C flows along the lower surface 76b of the second extension 76B via the second inclined end surface 78 of the second extension 76B. After that, the treatment liquid is guided to the second cup 72B by the inner peripheral surface of the second tubular portion 75B (see also FIG. 2). That is, by arranging the second guard 71B at the guard contact position, the guard 71 that receives the processing liquid discharged from the outer annular member 13 can be switched (guard switching step).

On the other hand, the processing liquid flowing on the lower surface of the substrate W scatters from the lower guide surface 61 toward the outer RO in the radial direction. The treatment liquid scattered from the lower guide surface 61 is received by the second extending portion 76B or the second tubular portion 75B. Both the treatment liquid discharged from the upper guide surface 60 and the treatment liquid discharged from the lower guide surface 61 pass through the treatment liquid discharge space 66.
When the arrangement of the plurality of guards 71 is the second arrangement, the third guard 71C functions as an upper guard, the first guard 71A functions as a lower guard, and the second guard 71B functions as an intermediate guard.

FIG. 5C shows a state in which the arrangement of the plurality of guards 71 when the first guard 71A receives the processing liquid discharged from the substrate W is the third arrangement.
In the third arrangement, the third guard 71C is arranged at a position close to the guide surface, and the second guard 71B and the first guard 71A are arranged at the guard contact position.
When the first guard 71A is located at the guard contact position, the first extension portion 76A comes into contact with the lower surface of the second extension portion 76B. The first inclined end surface 77 and the second inclined end surface 78 are inclined at the same angle with respect to the horizontal direction. When the first guard 71A and the second guard 71B are located at the guard contact positions, the first inclined end surface 77 and the second inclined end surface 78 are flush with each other.

When the plurality of guards 71 are arranged in the third arrangement, the treatment liquid discharged from the treatment liquid passage 65 (toward the outer RO in the radial direction from the upper guide surface 60) is sent to the lower surface 76c of the third extension portion 76C. It flows along the radial outward RO.
The radial inward end of the second extension 76B of the second guard 71B is in contact with the lower surface 76c of the third extension 76C, and is radially inward of the first extension 76A of the first guard 71A. The end is in contact with the lower surface 76b of the second extension 76B. Further, the second inclined end surface 78 of the second extending portion 76B and the first inclined end surface 77 of the first extending portion 76A are at the same angle with respect to the horizontal direction and downward toward the outward RO in the radial direction. It is inclined like. Therefore, the treatment liquid is first spread from the lower surface 76c of the third extension portion 76C via the second inclined end surface 78 of the second extension portion 76B and the first inclined end surface 77 of the first extension portion 76A. It flows along the lower surface 76a of the installation portion 76A. After that, the treatment liquid is guided to the first cup 72A by the inner peripheral surface of the first tubular portion 75A (see also FIG. 2).

On the other hand, the processing liquid flowing on the lower surface of the substrate W scatters from the lower guide surface 61 toward the outer RO in the radial direction. The treatment liquid scattered from the lower guide surface 61 is received by the first extending portion 76A or the first tubular portion 75A.
When the arrangement of the plurality of guards 71 is the third arrangement, the third guard 71C functions as an upper guard. When the arrangement of the plurality of guards 71 is the third arrangement, the lower guard and the intermediate guard are not provided.

Although not shown, when the substrate W is transported in the processing unit 2, it is arranged in a plurality of guard 71 substrate transport arrangements. In the substrate transport arrangement, the third guard 71C is arranged at a position close to the guide surface. In the substrate transport arrangement, the second guard 71B and the first guard 71A may be arranged at any position as long as they are arranged at a lower position, a guard contact position, or a position between them.

Next, the configuration of the chuck pin 20 will be described.
FIG. 6 is a cross-sectional view taken along the line VI-VI shown in FIG. 7A and 7B are schematic plan views of the chuck pin 20.
The chuck pin 20 includes a grip portion 100 that is pressed against the peripheral end surface of the substrate W, and a support portion 101 that supports the lower peripheral edge portion of the substrate W. The chuck pin 20 further includes a base portion 102 that rotates around a pin rotation axis A2 parallel to the substrate rotation axis A1 together with a grip portion 100 and a support portion 101. The grip portion 100 is arranged above the support portion 101.

The grip portion 100, the support portion 101, and the base portion 102 are integrally formed. The processing unit 2 includes a chuck pin opening / closing unit 26 that moves the base portion 102 in the horizontal direction.
The grip portion 100 and the support portion 101 are supported by the base portion 102. The base portion 102 is driven around the pin rotation axis A2 by the chuck pin opening / closing unit 26. The grip portion 100 and the support portion 101 are arranged above the spin base 21. The grip portion 100 is arranged above the support portion 101. As shown in FIG. 7A, the grip portion 100 and the support portion 101 are arranged around the pin rotation axis A2 and do not intersect the pin rotation axis A2.

The grip portion 100 includes two groove inner surfaces forming an accommodating groove 103 having a V-shaped vertical cross section (cross section cut in a vertical plane) open on the substrate rotation axis A1 side. The two groove inner surfaces include an upper groove inner surface 103A extending diagonally upward and inward from the bottom of the accommodating groove 103, and a lower groove inner surface 103B extending diagonally downward and inward from the bottom of the accommodating groove 103. The support portion 101 includes a support surface 104 extending diagonally downward in the radial inward RI from the lower ends of the two groove inner surfaces (inner ends of the lower groove inner surface 103B).

The support surface 104 is arranged below the accommodating groove 103. The support surface 104 is arranged inside the lower groove inner surface 103B and is continuous with the lower groove inner surface 103B. The upper groove inner surface 103A and the lower groove inner surface 103B have the same size as each other and are inclined in the opposite directions with respect to the horizontal direction. The support surface 104 is tilted with respect to the horizontal direction at an angle smaller than the tilt angle of the lower groove inner surface 103B with respect to the horizontal direction.

As shown in FIGS. 7A and 7B, each chuck pin 20 has a closed position (see FIG. 7A) in which the grip portion 100 is pressed against the peripheral end surface of the substrate W, and an opening in which the grip portion 100 is separated from the peripheral end surface of the substrate W. It is rotatable about the pin rotation axis A2 with respect to the spin base 21 to and from the position (see FIG. 7B).
The chuck pin opening / closing unit 26 rotates each chuck pin 20 around the pin rotation axis A2 between the closed position and the open position. The closed position is a position where the substrate W is gripped by the plurality of chuck pins 20, and the open position is a position where the substrate W is released from being gripped by the plurality of chuck pins 20. The chuck pin opening / closing unit 26 has a plurality of chuck pins 20 between a closed state in which the plurality of chuck pins 20 grip the substrate W and an open state in which the plurality of chuck pins 20 release the grip on the substrate W. To switch.

The chuck pin opening / closing unit 26 includes, for example, a link mechanism (not shown) built in the spin base 21 and a drive source (not shown) arranged outside the spin base 21. The drive source includes, for example, a ball screw mechanism and an electric motor that gives a driving force to the ball screw mechanism.
When the chuck pin 20 is in the open position, as shown by the alternate long and short dash line in FIG. 6, the support surface 104 of the support portion 101 comes into contact with the lower peripheral edge portion of the substrate W, and the substrate W comes from the upper surface of the spin base 21. Is also supported in a horizontal position at the upper support position.

Since the support surface 104 extends diagonally upward toward the accommodating groove 103, when the chuck pin opening / closing unit 26 moves each chuck pin 20 from the open position to the closed position, each chuck pin 20 moves toward the closed position. In the process of doing so, the substrate W is gradually lifted by the plurality of support surfaces 104. In the process of further moving the chuck pin 20 toward the closed position, the grip portion 100 approaches the peripheral end surface of the substrate W, and the peripheral edge portion of the substrate W enters the accommodating groove 103. As a result, as shown by the solid line in FIG. 6, the upper groove inner surface 103A and the lower groove inner surface 103B are pressed against the peripheral edge of the substrate W, and the substrate W is gripped in a horizontal posture at a gripping position above the support position. To.

On the contrary, when the chuck pin opening / closing unit 26 moves the plurality of chuck pins 20 from the closed position to the open position, the pressing of the upper groove inner surface 103A and the lower groove inner surface 103B against the peripheral edge portion of the substrate W is released, and each chuck pin is released. In the process of moving 20 toward the open position, the grip portion 100 is separated from the peripheral end surface of the substrate W. As each chuck pin 20 further moves toward the open position, the substrate W returns to a state of being supported by the plurality of support surfaces 104.

8A and 8B are partial cross-sectional views taken along line VIII-VIII shown in FIG. In FIGS. 8A and 8B, the connecting member 17 and the fixing member 16 are shown without using a cross section. The connecting member 17 includes a connecting portion 110 connected to the lower surface of the inner annular member 14, and a substrate receiving portion 111 provided below the connecting portion 110 and receiving the substrate W from a plurality of chuck pins 20. The substrate receiving portion 111 has a substrate receiving surface 112 facing the peripheral edge of the lower surface of the substrate W from below.

The processing unit 2 further includes a connecting member elevating unit 27 that raises and lowers the connecting member 17. The connecting member 17 has a retracted position below the first substrate delivery position where the substrate W is delivered between the support surface 104 and the connecting member 17, and the substrate W between the transfer robot CR and the connecting member 17. It goes up and down to and from the second board delivery position where delivery is performed. FIG. 8A shows a state in which the connecting member 17 is located at the retracted position. FIG. 8B shows a state in which the connecting member 17 is located at the second substrate delivery position.

When the connecting member 17 is located at the retracted position, the outer end surface 14b of the inner annular member 14 is close to the inner end surface 15a of the outer annular guide portion 15 when the third guard 71C is located near the guide surface. opposite.
9A and 9B are partial cross-sectional views taken along the line IX-IX shown in FIG. In FIGS. 9A and 9B, the support member 18 and the fixing member 16 are shown without using a cross section. Unlike the connecting member 17, the supporting member 18 is not connected to the inner annular member 14 and does not move up and down. When the connecting member 17 is in the retracted position (see FIG. 8A), the support member 18 supports the inner annular member 14 from below, as shown in FIG. 9A. When the connecting member 17 is located at the second substrate delivery position (see FIG. 8B), the support member 18 is separated from the inner annular member 14 as shown in FIG. 9B.

When the hand H2 of the transfer robot CR carries the substrate W into the processing unit 2, as shown in FIG. 9B, the connecting member 17 is located at the second substrate delivery position, and the third guard 71C is close to the guide surface. Located in position. In this state, the hand H2 enters the access gap G between the inner guide surface 63 of the inner annular member 14 and the upper surface of the radial inner end portion of the outer annular guide portion 15. As shown in FIG. 4, the hand H2 enters the access gap G from the support member 18 side toward the substrate rotation axis A1 side.

After that, the hand H2 is placed on the substrate receiving surface 112 of the connecting member 17 and then retracted from the access gap G. After the hand H2 is retracted, the connecting member elevating unit 27 moves the connecting member 17 toward the retracted position. The connecting member 17 passes through the first substrate delivery position on the way to the retracted position. When the connecting member 17 passes through the first substrate delivery position, the connecting member 17 delivers the substrate W to the support surfaces 104 of the plurality of chuck pins 20 located at the open positions (board delivery step). After that, the chuck pin opening / closing unit 26 moves the plurality of chuck pins 20 to the closed position, so that the substrate W is held by the spin chuck 5 (the substrate gripping step). As a result, the loading of the substrate W into the processing unit 2 is completed (the substrate loading process).

On the contrary, when the hand H2 of the transfer robot CR carries out the substrate W from the processing unit 2, the connecting member elevating unit 27 removes the connecting member 17 from the retracted position while the plurality of chuck pins 20 are located in the open positions. Move toward the board delivery position. When passing through the first substrate delivery position, the connecting member 17 receives the substrate W from the support surfaces 104 of the plurality of chuck pins 20 located at the open positions (board receiving step). Then, when the connecting member 17 is located at the second substrate delivery position, the hand H2 enters the access gap G and receives the substrate W from the connecting member 17. As a result, the unloading of the substrate W from the processing unit 2 is completed (the substrate unloading process).

In this way, the hand H2 of the transfer robot CR carries out the substrate W from the substrate receiving surface 112 of the connecting member 17 or onto the substrate receiving surface 112 of the connecting member 17 at a position higher than the support surface 104 of the chuck pin 20. The substrate W can be placed on it. Therefore, as compared with the configuration in which the transfer robot CR carries out the substrate W from the support surface 104 or places the substrate W on the support surface 104, the transfer robot CR can transfer the substrate W at a position separated from the spin base 21. it can. Therefore, the substrate W can be easily transferred by the transfer robot CR.

FIG. 10 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls a control target provided in the substrate processing apparatus 1 according to a predetermined control program.
Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B in which a control program is stored. The controller 3 is configured to execute various controls for substrate processing by the processor 3A executing a control program.

In particular, the controller 3 includes a transfer robot IR, CR, a spin motor 23, a first nozzle moving unit 35, a second nozzle moving unit 36, a third nozzle moving unit 37, a fourth nozzle moving unit 38, a guard elevating unit 74, and a chuck. Pin opening / closing unit 26, connecting member elevating unit 27, exhaust unit 25, first upper chemical solution valve 50, second upper chemical solution valve 51, upper rinse solution valve 52, upper drying accelerator solution valve 53, first lower chemical solution valve 54, Second lower chemical liquid valve 55, lower rinse liquid valve 56, lower drying accelerator liquid valve 57, lower gas valve 58, mass flow controller 96B, variable flow rate valve 97B, variable flow rate valve 98B, first gas valve 96A, first It is programmed to control a two-gas valve 97A, a third gas valve 98A, and the like.

By controlling the valve by the controller 3, the presence or absence of discharge of the processing liquid or the inert gas from the corresponding nozzle and the discharge flow rate of the processing liquid or the inert gas from the corresponding nozzle are controlled.
FIG. 11 is a flow chart for explaining an example of substrate processing by the substrate processing apparatus 1. FIG. 10 mainly shows the processing realized by the controller 3 executing the program. 12A to 12E are schematic views for explaining the state of each step of the substrate processing. In the following, we will mainly refer to FIGS. 2 and 11. 12A to 12E will be referred to as appropriate.

In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 11, a substrate loading step (step S1), a first chemical solution supply step (step S2), a first rinsing step (step S3), and a second chemical solution supply step (Step S4), a second rinsing step (step S5), a drying accelerator liquid supply step (step S6), a spin drying step (step S7), and a substrate unloading step (step S8) are executed.

First, the substrate loading step (step S1) in which the unprocessed substrate W is loaded into the processing unit 2 by the transfer robot CR is executed. The guard elevating unit 74 arranges a plurality of guards 71 in the substrate transport arrangement, and the chuck pin opening / closing unit 26 moves the chuck pin 20 to the open position. Then, the connecting member elevating unit 27 moves the connecting member 17 to the second substrate delivery position. Then, the transfer robot CR enters the processing unit 2, places the unprocessed substrate W on the connecting member 17, and completes the carry-in into the processing unit 2. Then, the connecting member elevating unit 27 moves the connecting member 17 to the retracted position. On the way, the substrate W is delivered from the connecting member 17 to the chuck pin 20. When the chuck pin opening / closing unit 26 moves the chuck pin 20 to the closed position, the substrate W is held horizontally by the spin chuck 5 (board holding step). The holding of the substrate W by the spin chuck 5 is continued until the spin drying step (step S7) is completed.

Next, after the transfer robot CR has retracted to the outside of the processing unit 2, the first chemical solution supply step (step S2) of supplying a chemical solution such as DHF to the upper surface and the lower surface of the substrate W is executed.
Specifically, the spin motor 23 starts rotating the spin base 21. The substrate W, the outer annular member 13 and the inner annular member 14 rotate together with the spin base 21. The rotation of the spin base 21 is continued until the spin drying step (step S7) is completed. Then, the guard elevating unit 74 switches the arrangement of the plurality of guards 71 from the substrate transfer arrangement to the second arrangement. As a result, the treatment liquid discharge space 66 is formed (discharge space forming step). Further, the second guard 71B as an intermediate guard is arranged in the processing liquid discharge space 66, and the guard 71 that receives the processing liquid is switched to the second guard 71B (intermediate guard arrangement step, guard switching step).

Then, the first nozzle moving unit 35 moves the first moving nozzle 8 to a processing position facing the upper surface of the substrate W. The processing position may be the center position.
The first upper chemical solution valve 50 and the first lower chemical solution valve 54 are opened in a state where the arrangement of the plurality of guards 71 is the second arrangement and the first moving nozzle 8 is located at the processing position. When the first upper chemical solution valve 50 is opened, as shown in FIG. 12A, the chemical solution such as DHF is discharged from the first moving nozzle 8 toward the upper surface of the rotating substrate W. The chemical solution discharged from the first moving nozzle 8 lands on the central region of the upper surface of the substrate W. That is, the upper treatment liquid supply step in which the chemical liquid as the treatment liquid is supplied to the upper surface of the substrate W is executed.

When the first lower chemical solution valve 54 is opened, the chemical solution such as DHF is discharged from the lower surface nozzle 12 toward the upper surface of the substrate W. The chemical solution discharged from the first moving nozzle 8 lands on the central region of the lower surface of the substrate W. That is, the lower treatment liquid supply step in which the chemical liquid as the treatment liquid is supplied to the lower surface of the substrate W is executed.
Centrifugal force due to the rotation of the substrate W acts on the chemical solution deposited on the upper surface and the lower surface of the substrate W. Therefore, the chemical solution is spread over the entire upper surface and lower surface of the substrate W by centrifugal force, and liquid films 200 and 201 of the chemical solution are formed on the upper surface and the lower surface of the substrate W.

The chemical solution that has reached the peripheral edge of the upper surface of the substrate W is guided outward RO in the radial direction from the peripheral edge of the upper surface of the substrate W, that is, on the upper guide surface 60 by the centrifugal force based on the rotation of the substrate W ( Upper treatment liquid guidance process). The chemical solution on the upper guide surface 60 forms a flow toward the outer RO in the radial direction and is discharged from the outer annular member 13 (upper treatment liquid discharge step). Specifically, the chemical liquid discharged from the upper guide surface 60 keeps the state of the liquid film 200 (continuous flow state), and the lower surface 76c of the third extension portion 76C and the second of the second extension portion 76B. It is guided to the radial outer RO in the treatment liquid discharge space 66 along the inclined end surface 78 and the lower surface 76b of the second extension portion 76B (discharge treatment liquid guidance step).

The chemical solution that has reached the peripheral edge of the lower surface of the substrate W is guided to the outer RO in the radial direction, that is, the lower guide surface 61, from the peripheral edge of the lower surface of the substrate W by the centrifugal force based on the rotation of the substrate W. Lower treatment liquid guidance process). Therefore, the chemical solution on the lower guide surface 61 forms a flow toward the outer RO in the radial direction and is discharged from the outer annular member 13 (lower treatment liquid discharge step). Specifically, the chemical solution discharged from above the lower guide surface 61 is received by the lower surface 76b of the second extending portion 76B or the inner peripheral surface of the second tubular portion 75B.

Centrifugal force based on the rotation of the substrate W acts on the chemical solution on the upper guide surface 60. Therefore, the liquid film 200 of the chemical solution discharged from the upper guide surface 60 becomes a swirling liquid film that rotates in the same direction as the rotation direction of the substrate W along the lower surface 76b of the second extending portion 76B.
Next, the first rinsing step (step S3) is executed in which the rinsing solution is supplied to the upper surface and the lower surface of the substrate W to wash away the chemical solution existing on the upper surface and the lower surface of the substrate W.

Specifically, the first upper chemical solution valve 50 and the first lower chemical solution valve 54 are closed. As a result, the supply of the chemical solution to the upper surface and the lower surface of the substrate W is stopped. With the first upper chemical solution valve 50 closed, the first nozzle moving unit 35 moves the first moving nozzle 8 to the retracted position.
The third nozzle moving unit 37 moves the third moving nozzle 10 toward the processing position so that the supply of the rinsing solution can be started promptly after the discharge of the chemical solution from the first moving nozzle 8 is stopped. The processing position may be the center position. Then, the guard elevating unit 74 switches the arrangement of the plurality of guards 71 from the second arrangement to the third arrangement. Therefore, the treatment liquid discharge space 66 is not formed.

The upper rinse liquid valve 52 and the lower rinse liquid valve 56 are opened in a state where the arrangement of the plurality of guards 71 is the third arrangement and the third moving nozzle 10 is located at the processing position. When the upper rinse liquid valve 52 is opened, as shown in FIG. 12B, a rinse liquid such as DIW is discharged from the third moving nozzle 10 toward the upper surface of the substrate W. The rinse liquid discharged from the third moving nozzle 10 is deposited on the central region of the upper surface of the substrate W (upper treatment liquid supply step).

When the lower rinse liquid valve 56 is opened, a rinse liquid such as DIW is discharged from the lower surface nozzle 12 toward the upper surface of the substrate W. The rinse liquid discharged from the lower surface nozzle 12 is deposited on the central region of the lower surface of the substrate W (lower treatment liquid supply step).
Centrifugal force due to the rotation of the substrate W acts on the rinse liquid that has landed on the upper surface and the lower surface of the substrate W. Therefore, the rinse solution is spread over the entire upper surface and lower surface of the substrate W by centrifugal force, and the chemical solutions in the liquid films 200 and 201 on the upper surface and the lower surface of the substrate W are replaced with the rinse solution.

The rinse liquid that has reached the peripheral edge of the upper surface of the substrate W is guided to the outer RO in the radial direction from the peripheral edge of the upper surface of the substrate W, that is, the upper guide surface 60 by the centrifugal force based on the rotation of the substrate W. Therefore, the rinse liquid on the upper guide surface 60 forms a flow toward the outer RO in the radial direction and is discharged from the outer annular member 13 (upper treatment liquid discharge step). Specifically, the rinse liquid discharged from the upper guide surface 60 is the lower surface 76c of the third extension 76C and the second extension 76B while maintaining the state of the liquid film 200 (continuous flow state). 2 Guided to the outer RO in the radial direction along the lower surface 76a of the first extending portion 76A via the first inclined end surface 77 of the inclined end surface 78 and the first extending portion 76A (discharge treatment liquid guiding step). ..

The rinse liquid that has reached the peripheral edge of the lower surface of the substrate W is guided to the outer RO in the radial direction, that is, the lower guide surface 61, from the peripheral edge of the lower surface of the substrate W by the centrifugal force based on the rotation of the substrate W. (Lower treatment liquid guidance process). Therefore, the rinse liquid on the lower guide surface 61 forms a flow toward the outer RO in the radial direction and is discharged from the outer annular member 13 (lower treatment liquid discharge step). Specifically, the rinse liquid discharged from above the lower guide surface 61 is received by the lower surface of the first extending portion 76A or the inner peripheral surface of the first tubular portion 75A.

Centrifugal force based on the rotation of the substrate W acts on the rinse liquid on the upper guide surface 60. Therefore, the liquid film 200 of the rinse liquid discharged from the upper guide surface 60 becomes a swirling liquid film that rotates in the same direction as the rotation direction of the substrate W along the lower surface 76a of the first extending portion 76A.
Next, a second chemical solution supply step (step S4) is executed in which a chemical solution (SC1) different from the chemical solution (DHF) described above is supplied to the upper surface and the lower surface of the substrate W to treat the upper surface and the lower surface of the substrate W.

Specifically, the upper rinse liquid valve 52 and the lower rinse liquid valve 56 are closed. As a result, the supply of the rinse liquid to the upper surface and the lower surface of the substrate W is stopped. With the upper rinse liquid valve 52 closed, the third nozzle moving unit 37 moves the third moving nozzle 10 to the retracted position.
The second nozzle moving unit 36 moves the second moving nozzle 9 toward the processing position so that the supply of the chemical solution can be started promptly after the discharge of the rinse solution from the third moving nozzle 10 is stopped. The processing position may be the center position. Then, the guard elevating unit 74 maintains the arrangement of the plurality of guards 71 in the third arrangement.

The second upper chemical solution valve 51 and the second lower chemical solution valve 55 are opened in a state where the plurality of guards 71 are arranged in the third arrangement and the second moving nozzle 9 is located at the processing position. When the upper rinse solution valve 52 is opened, as shown in FIG. 12C, a chemical solution such as SC1 is discharged from the second moving nozzle 9 toward the upper surface of the substrate W. The chemical solution discharged from the second moving nozzle 9 is deposited on the central region of the upper surface of the substrate W (upper treatment liquid supply step).

When the second lower chemical solution valve 55 is opened, the chemical solution such as SC1 is discharged from the lower surface nozzle 12 toward the upper surface of the substrate W. The chemical solution discharged from the lower surface nozzle 12 is deposited on the central region of the lower surface of the substrate W (lower treatment liquid supply step). Centrifugal force due to the rotation of the substrate W acts on the chemical solution deposited on the upper surface and the lower surface of the substrate W. Therefore, the chemical solution is spread over the entire upper surface and lower surface of the substrate W by centrifugal force, and the rinse solution in the liquid films 200 and 201 on the upper surface and the lower surface of the substrate W is replaced with the chemical solution.

The chemical solution that has reached the peripheral edge of the upper surface of the substrate W is guided to the outer RO in the radial direction from the peripheral edge of the upper surface of the substrate W, that is, the upper guide surface 60 by the centrifugal force based on the rotation of the substrate W. Therefore, the chemical solution on the upper guide surface 60 forms a flow toward the outer RO in the radial direction, and is discharged to the outside of the outer annular member 13. Specifically, the chemical liquid discharged from the upper guide surface 60 is the lower surface of the third extension portion 76C and the second inclination of the second extension portion 76B while maintaining the state of the liquid film 200 (continuous flow state). It is guided outward in the radial direction along the lower surface of the first extension portion 76A via the end surface 78 and the first inclined end surface 77 of the first extension portion 76A (discharge treatment liquid guidance step).

The chemical solution that has reached the peripheral edge of the lower surface of the substrate W is guided to the outer RO in the radial direction, that is, the lower guide surface 61, from the peripheral edge of the lower surface of the substrate W by the centrifugal force based on the rotation of the substrate W. Lower treatment liquid guidance process). Therefore, the chemical solution on the lower guide surface 61 forms a flow toward the outer RO in the radial direction and is discharged from the outer annular member 13 (lower treatment liquid discharge step). Specifically, the chemical solution discharged from above the lower guide surface 61 is received by the lower surface 76a of the first extending portion 76A or the inner peripheral surface of the first tubular portion 75A.

Centrifugal force based on the rotation of the substrate W acts on the chemical solution on the upper guide surface 60. Therefore, the liquid film 200 of the chemical liquid discharged from the upper guide surface 60 becomes a swirling liquid film that rotates in the same direction as the rotation direction of the substrate W along the lower surface of the first extending portion 76A.
Next, a second rinsing step (step S5) is executed in which a rinsing solution such as DIW is supplied to the upper surface and the lower surface of the substrate W to wash away the chemical solution (SC1) existing on the upper surface and the lower surface of the substrate W.

Specifically, the second upper chemical solution valve 51 and the second lower chemical solution valve 55 are closed. As a result, the supply of the chemical solution to the upper surface and the lower surface of the substrate W is stopped. With the second upper chemical solution valve 51 closed, the second nozzle moving unit 36 moves the second moving nozzle 9 to the retracted position.
The third nozzle moving unit 37 moves the third moving nozzle 10 toward the processing position so that the supply of the rinsing solution can be started promptly after the discharge of the chemical solution from the second moving nozzle 9 is stopped. The processing position may be the center position. Then, the guard elevating unit 74 maintains the arrangement of the plurality of guards 71 in the third arrangement.

The upper rinse liquid valve 52 and the lower rinse liquid valve 56 are opened in a state where the arrangement of the plurality of guards 71 is the first arrangement and the third moving nozzle 10 is located at the processing position. When the upper rinse liquid valve 52 is opened, as shown in FIG. 12B, the rinse liquid such as DIW is discharged from the third moving nozzle 10 toward the upper surface of the substrate W as before. Since the details of the second rinsing step after discharging the rinsing liquid are almost the same as those of the first rinsing step, the description thereof will be omitted.

Next, a drying accelerating liquid supply step (step S6) is executed in which the drying accelerating liquid is supplied to the upper surface and the lower surface of the substrate W to replace the rinsing liquid on the upper surface and the lower surface of the substrate W with the drying accelerating liquid.
Specifically, the upper rinse liquid valve 52 and the lower rinse liquid valve 56 are closed. As a result, the supply of the rinse liquid to the upper surface and the lower surface of the substrate W is stopped. With the upper rinse liquid valve 52 closed, the third nozzle moving unit 37 moves the third moving nozzle 10 to the retracted position.

The fourth nozzle moving unit 38 moves the fourth moving nozzle 11 toward the processing position so that the supply of the drying accelerating liquid can be started promptly after the discharge of the rinse liquid from the third moving nozzle 10 is stopped. .. The processing position may be the center position. Then, the guard elevating unit 74 switches the arrangement of the plurality of guards 71 from the third arrangement to the first arrangement. As a result, the treatment liquid discharge space 66 is formed (discharge space forming step).

The upper drying accelerator liquid valve 53 and the lower rinse liquid valve 56 are opened in a state where the arrangement of the plurality of guards 71 is the first arrangement and the fourth moving nozzle 11 is located at the processing position.
When the upper drying accelerator valve 53 is opened, as shown in FIG. 12D, the drying accelerator such as IPA is discharged from the fourth moving nozzle 11 toward the upper surface of the substrate W. The drying accelerating liquid discharged from the fourth moving nozzle 11 is deposited on the central region of the upper surface of the substrate W (upper treatment liquid supply step).

When the lower drying accelerator valve 57 is opened, as shown in FIG. 12D, a drying accelerator such as IPA is discharged from the lower surface nozzle 12 toward the upper surface of the substrate W. The drying accelerating liquid discharged from the lower surface nozzle 12 is deposited on the central region of the lower surface of the substrate W (lower treatment liquid supply step).
Centrifugal force due to the rotation of the substrate W acts on the drying accelerator liquid that has landed on the upper surface and the lower surface of the substrate W. Therefore, the drying accelerating liquid spreads over the entire upper surface and lower surface of the substrate W by centrifugal force, and the rinsing liquid in the liquid films 200 and 201 on the upper surface and the lower surface of the substrate W is replaced with the drying accelerating liquid.

The drying accelerator that has reached the peripheral edge of the upper surface of the substrate W is guided to the outer RO in the radial direction from the peripheral edge of the upper surface of the substrate W, that is, the upper guide surface 60 by the centrifugal force based on the rotation of the substrate W. (Upper treatment liquid guidance process). Therefore, the drying accelerating liquid on the upper guide surface 60 forms a flow toward the outer RO in the radial direction and is discharged from the outer annular member 13 (upper treatment liquid discharge step). Specifically, the drying accelerating liquid discharged from the upper guide surface 60 is placed in the treatment liquid discharge space 66 along the lower surface of the third extension portion 76C while maintaining the state of the liquid film 200 (continuous flow state). It is guided to the outer RO in the radial direction (discharge treatment liquid guidance process).

The drying accelerator that has reached the peripheral edge of the lower surface of the substrate W is guided to the outer RO in the radial direction, that is, the lower guide surface 61, from the peripheral edge of the lower surface of the substrate W by the centrifugal force based on the rotation of the substrate W. (Lower treatment liquid guidance process). Therefore, the drying accelerating liquid on the lower guide surface 61 forms a flow toward the outer RO in the radial direction and is discharged to the outside of the outer annular member 13 (lower treatment liquid discharge step). Specifically, the drying accelerating liquid discharged from above the lower guide surface 61 is received by the lower surface 76c of the third extending portion 76C or the inner peripheral surface of the third tubular portion 75C.

Centrifugal force based on the rotation of the substrate W acts on the drying accelerator liquid on the upper guide surface 60. Therefore, the liquid film 200 of the rinse liquid discharged from the upper guide surface 60 becomes a swirling liquid film that rotates in the same direction as the rotation direction of the substrate W along the lower surface 76c of the third extending portion 76C.
Next, the spin dry step (step S7) is executed. Specifically, the upper drying accelerator valve 53 and the lower drying accelerator valve 57 are closed. As a result, the supply of the drying accelerator to the upper surface and the lower surface of the substrate W is stopped.

Then, the spin motor 23 accelerates the rotation of the substrate W to rotate the substrate W at high speed. As a result, a large centrifugal force remains on the substrate W and acts on the drying accelerating liquid, and the drying accelerating liquid on the substrate W is shaken off around the substrate W.
In the spin-drying step, gas is sprayed onto the substrate W. The fourth nozzle moving unit 38 moves the fourth moving nozzle 11 to a proximity drying position close to the upper surface of the substrate W. The first gas valve 96A, the second gas valve 97A, and the lower gas valve 58 are opened with the fourth moving nozzle 11 located at the proximity drying position.

When the first gas valve 96A is opened, a gas such as nitrogen gas is discharged linearly from the linear flow discharge port 11b of the fourth moving nozzle 11 along the vertical direction. As shown in FIG. 12E, the gas discharged from the linear airflow discharge port 11b forms a linear airflow F1 perpendicularly incident on the upper surface of the substrate W. The linear airflow F1 collides with the upper surface of the substrate W and changes its direction to the outward RO in the radial direction parallel to the upper surface of the substrate W. Then, the airflow that has changed its direction to the outer RO in the radial direction passes between the inner annular member 14 and the substrate W, and between the outer annular member 13 and the outer annular guide portion 15 (treatment liquid passage 65). Then, it is discharged to the outer RO in the radial direction from the outer annular member 13. As a result, the drying accelerating liquid that has entered a narrow gap such as a gap between the inner annular member 14 and the substrate W and a gap between the outer annular member 13 and the outer annular guide portion 15 (treatment liquid passage 65) is introduced. Can be removed.

The airflow discharged from the outer annular member 13 to the radial outer RO goes toward the radial outer RO along the lower surface 76c of the third extending portion 76C of the third guard 71C, and then the third guard 71C. It goes downward along the inner peripheral surface of the third tubular portion 75C. As a result, drying of the lower surface 76c of the third extending portion 76C of the third guard 71C and the inner peripheral surface of the third tubular portion 75C of the third guard 71C can be promoted.

When the second gas valve 97A is opened, gas is discharged from the horizontal flow discharge port 11c of the fourth moving nozzle 11. The gas discharged from the horizontal flow discharge port 11c forms a horizontal air flow F2 that is parallel to the upper surface of the substrate W and covers the upper surface of the substrate W. The horizontal airflow F2 preferably goes toward the outer RO in the radial direction above the inner annular member 14. In that case, it is possible to protect the upper surface of the substrate W while suppressing the generation of turbulence due to the collision between the horizontal airflow F2 and the inner annular member 14.

When the lower gas valve 58 is opened, the gas is discharged from the lower gas flow path 90 toward the portion around the central portion of the lower surface of the substrate W. The gas discharged from the lower gas flow path 90 forms an air flow perpendicularly incident on the lower surface of the substrate W. This airflow hits the lower surface of the substrate W and turns in the radial outward RO parallel to the lower surface of the substrate W. Then, the airflow that has been turned to the radial outer RO is directed toward the radial outer RO along the lower surface of the outer annular member 13, and then discharged from the outer annular member 13 to the radial outer RO. .. This makes it possible to accelerate the drying of the lower surface of the substrate W and the lower surface of the outer annular member 13.

After that, the substrate loading step (step S1) in which the processed substrate W is carried out from the processing unit 2 by the transfer robot CR is executed. The guard elevating unit 74 arranges a plurality of guards 71 in the substrate transport arrangement, and the chuck pin opening / closing unit 26 moves the chuck pin 20 to the open position. Then, the connecting member elevating unit 27 moves the connecting member 17 to the second substrate delivery position. Then, the transfer robot CR enters the processing unit 2, scoops the processed substrate W from the connecting member 17, and carries it out of the processing unit 2. The substrate W is passed from the transfer robot CR to the transfer robot IR, and is housed in the carrier C by the transfer robot IR.

According to the first embodiment, the processing liquid supplied to the upper surface of the substrate W is caused by the centrifugal force based on the rotation of the substrate W to form the outer annular member 13 of the outer annular member 13 in the radial direction outward from the peripheral edge of the upper surface of the substrate W. It is guided on the upper guide surface 60. Therefore, the treatment liquid on the upper guide surface 60 forms a flow toward the outer RO in the radial direction, and is discharged to the outside of the outer annular member 13.
The facing guide surface 80a of the outer annular guide portion 15 guides the processing liquid on the upper guide surface 60 to the outer RO in the radial direction together with the upper guide surface 60. Since the facing guide surface 80a faces the upper guide surface 60 from above, it is possible to prevent the processing liquid on the upper guide surface 60 from splashing upward. Therefore, the treatment liquid can be smoothly discharged in a continuous flow state toward the outer RO in the radial direction from the outer annular member 13.

When the arrangement of the plurality of guards 71 is the first arrangement, the upper guard (third guard 71C) has the upper extension portion (third extension portion 76C) close to the radial outer end of the upper guide surface 60. It is placed near the guide surface. Therefore, the treatment liquid discharged from the outer annular member 13 travels along the third extending portion 76C close to the radial outer end of the upper guide surface 60 while maintaining the continuous flow state, and is radially outer RO. Move further to. Therefore, it is possible to prevent the treatment liquid from colliding with the third guard 71C and rebounding the treatment liquid in the droplet state.

The treatment liquid passes through the treatment liquid discharge space 66 while traveling through the third extension portion 76C of the third guard 71C. Then, in the processing liquid discharge space 66, the air flow and the third cylinder that flow in the radial outward RO between the third extension portion 76C and the second extension portion 76B by being exhausted by the exhaust unit 25. An air flow flowing downward is formed between the shaped portion 75C and the second tubular portion 75B. Therefore, even if mist is generated from the processing liquid transmitted through the third guard 71C for some reason, the mist is discharged from the lower end of the third tubular portion 75C on the air flow.

Even if there is a mist that is not discharged from the lower end of the third tubular portion 75C, the mist is the lower extension portion (second extension portion 76B) of the lower guard (second guard 71B). It adheres to the surface from above, and the movement of mist to the outside of the treatment liquid discharge space 66 is prevented. Therefore, it is possible to suppress the diffusion of the mist of the treatment liquid to the outside of the treatment liquid discharge space 66. Therefore, it is possible to prevent the mist of the treatment liquid from drifting around the substrate W and finally adhering to the substrate.
In the state where the third guard 71C is located at the guide proximity position, the lower surface 76c of the third extension portion 76C is close to the upper guide surface 60 of the outer annular member 13, so that the upper guide surface 60 and the outer annular guide portion 15 are located. The treatment liquid passage 65 between the facing guide surface 80a is narrow. The treatment liquid flows in the treatment liquid passage 65 toward the outer RO in the radial direction. Therefore, it is unlikely that the mist of the treatment liquid passes through the treatment liquid passage 65 and moves to the radial inward RI. Therefore, even if the mist generated from the treatment liquid transmitted through the lower surface 76c of the third extension portion 76C does not adhere to the second extension portion 76B for some reason, the mist is in the radial direction with respect to the outer annular member 13. It is blocked from moving to the inward RI.

As described above, it is possible to efficiently suppress the contamination of the substrate W caused by the treatment liquid discharged from the substrate W colliding with the surrounding members.
The same applies even when the arrangement of the plurality of guards 71 is the second arrangement. That is, the upper guard (third guard 71C) is arranged at a guide surface proximity position where the upper extension portion (third extension portion 76C) is close to the radial outer end of the upper guide surface 60. Therefore, the treatment liquid discharged from the outer annular member 13 has the third extension portion 76C and the second extension portion 76B close to the radial outer end of the upper guide surface 60 while maintaining the continuous flow state. It travels further to the outer RO in the radial direction. Therefore, it is possible to prevent the treatment liquid from colliding with the third guard 71C and rebounding the treatment liquid in the droplet state.

The treatment liquid passes through the treatment liquid discharge space 66 while traveling through the third extension portion 76C of the third guard 71C and the intermediate extension portion (second extension portion 76B) of the intermediate guard (second guard 71B). Then, in the processing liquid discharge space 66, the air flow and the second cylinder that flow in the radial outward RO between the second extension portion 76B and the first extension portion 76A by being exhausted by the exhaust unit 25. An air flow flowing downward is formed between the shaped portion 75B and the first tubular portion 75A. Therefore, even if mist is generated from the processing liquid transmitted through the third guard 71C or the second guard 71B for some reason, the mist is discharged from the lower end of the second tubular portion 75B on the air flow. To.

Even if there is a mist that is not discharged from the lower end of the second tubular portion 75B, the mist is the lower extension portion (first extension portion 76A) of the lower guard (first guard 71A). The mist adheres to the outside of the treatment liquid discharge space 66 and is prevented from moving. Therefore, it is possible to suppress the diffusion of the mist of the treatment liquid to the outside of the treatment liquid discharge space 66. Therefore, it is possible to prevent the mist of the treatment liquid from drifting around the substrate W and finally adhering to the substrate.

Even when the arrangement of the plurality of guards 71 is the second arrangement, it is unlikely that the mist of the treatment liquid passes through the treatment liquid passage 65 and moves to the radial inward RI as before. Therefore, even if the mist generated from the treatment liquid transmitted through the third extension portion 76C and the second extension portion 76B does not adhere to the first extension portion 76A for some reason, the outer annular member 13 It is prevented from moving inwardly in the radial direction.

When the arrangement of the plurality of guards 71 is the second arrangement, the second extension portion 76B (intermediate extension portion) of the second guard 71B becomes the third extension portion 76C (upper extension portion) of the third guard 71C. The second guard 71B (intermediate guard) is arranged at the guard contact position in contact with the installation portion). Therefore, the treatment liquid flowing radially outward RO along the lower surface 76c of the third extension 76C is guided to the lower surface 76b of the second extension 76B. Therefore, by arranging the second guard 71B at the guard contact position, it is possible to switch the extension portion along which the processing liquid discharged from the upper surface of the substrate W is placed. Therefore, the guard 71 that receives the processing liquid discharged from the upper surface of the substrate W is provided while efficiently suppressing the contamination of the substrate W caused by the treatment liquid discharged from the upper surface of the substrate W colliding with the surrounding members. Can be switched.

When the treatment liquid existing on the upper surface of the substrate W enters between the upper guide surface 60 of the outer annular member 13 and the opposing guide surface 80a of the outer annular guide portion 15, it may collide with the outer annular guide portion 15 and bounce off. There is.
Therefore, in the first embodiment, the outer annular guide portion 15 is provided with an inclined outer bounce suppressing surface 81a on the inner RI in the radial direction with respect to the facing guide surface 80a. Therefore, as compared with the configuration in which the facing guide surface 80a is directly connected to the vertically extending radial end surface, it is possible to suppress the treatment liquid from colliding with the outer annular guide portion 15 and rebounding itself.

Further, by providing the separation surface 82a, the collision position between the treatment liquid discharged from the substrate W and the outer annular member 13 can be set to the radial outer RO than the radial inner end of the outer annular member 13. .. Further, it is possible to prevent the treatment liquid that collides with the outer annular member 13 and is scattered above the outer annular member 13.
Further, according to the first embodiment, the inner annular member 14 facing the outer annular guide portion 15 in close proximity to the inner RI in the radial direction is arranged above the peripheral edge portion of the upper surface of the substrate W. Therefore, it is possible to prevent the treatment liquid that bounces off the outer annular guide portion 15 from moving in the radial inward RI. Therefore, it is possible to efficiently suppress the contamination of the substrate W caused by the treatment liquid discharged from the substrate W colliding with the surrounding members.

Therefore, even if the treatment liquid collides with the outer annular guide portion 15 and bounces off, droplets or mist of the treatment liquid may move above the outer annular member 13 or may be radially inward RI than the inner annular member 14. It is possible to suppress the movement to.
Further, in the first embodiment, the inner annular member 14 is provided with an inclined inner bounce suppressing surface 64 on the inner RI in the radial direction of the inner guide surface 63. Therefore, as compared with the configuration in which the inner guide surface 63 is directly connected to the vertically extending radial end surface, it is possible to suppress the treatment liquid from colliding with the inner annular member 14 and rebounding itself.

Further, according to the first embodiment, after the connecting member 17 delivers the substrate W to the support surfaces 104 of the plurality of chuck pins 20, the inner annular member 14 is moved to the outer annular guide portion 15 by being positioned at the retracted position. It can be brought close to and opposed from the radial inward RI. Therefore, immediately after the substrate W is delivered, the inner annular member 14 can be arranged at a position where the processing liquid bounced off from the outer annular guide portion 15 can be prevented from moving to the radial inward RI.

Further, according to the first embodiment, the outer annular guide portion 15 and the upper guard (third guard 71C) are integrally formed, and the facing guide surface 80a and the upper extension portion (third extension portion 76C) are integrally formed. Is connected to the lower surface 76c of the. Therefore, the treatment liquid discharged from the outer annular member 13 to the outer RO in the radial direction is smoothly transmitted from the facing guide surface 80a of the outer annular guide portion 15 to the lower surface 76c of the third extension portion 76C in a continuous flow state. Can be made.

Further, according to the first embodiment, the guard 71 does not rotate around the substrate rotation axis A1. If the guard 71 is configured to rotate, the process of moving to the radial outer RO along the vicinity of the radial outer end of the lower surface of the extension portion (for example, the third extension 76C) of the guard 71. Excessive centrifugal force acts on the liquid, causing the treatment liquid to scatter. If the treatment liquid is scattered, the mist of the treatment liquid may drift and adhere to the upper surface of the substrate W. If the guard 71 does not rotate around the substrate rotation axis A1 as in the first embodiment, it is located near the radial outer end of the lower surface of the extension portion (for example, the third extension portion 76C) of the guard 71. It is possible to suppress the scattering of the treatment liquid.

Further, if the guard 71 does not rotate around the substrate rotation axis A1 as in the first embodiment, it is not necessary to provide a guard rotation unit having a complicated structure for rotating the guard 71. Therefore, it is possible to suppress an increase in the cost of the substrate processing apparatus 1.
Further, the liquid film 200 of the treatment liquid discharged from the upper guide surface 60 becomes a swirling liquid film that rotates in the same direction as the rotation direction of the substrate W along the lower surface 76b of the second extending portion 76B. Therefore, the treatment liquid discharged from the lower guide surface 61 is received by the second guard 71 via the swirling liquid film. Even if a mist of the treatment liquid is generated when the chemical liquid discharged from the lower guide surface 61 collides with the swirling liquid film, it rides on the airflow on the downstream side in the rotation direction of the substrate W formed by the swirling liquid film. And move toward the downstream side in the direction of rotation. Therefore, it is possible to suppress the adhesion of the mist of the treatment liquid to the upper surface of the substrate W.

According to this embodiment, the treatment liquid on the upper guide surface 60 comes into contact with the facing guide surface 80a of the outer annular guide portion 15 in the state of the liquid film 200, so that the liquid film is formed on the lower surface 76c of the third extension portion 76C. It is transmitted while maintaining the state of 200. Therefore, when the treatment liquid moves from the upper guide surface 60 to the lower surface 76c of the third extension portion 76C, the flow of the treatment liquid is not disturbed. As a result, the generation of mist in the treatment liquid can be suppressed.

In the substrate treatment described above, the treatment liquid passage width D1 (see FIG. 3) is substantially equal to the thickness of the liquid film 200 of the treatment liquid flowing through the upper guide surface 60. Therefore, the treatment liquid can suppress the occurrence of collision between the outer annular guide portion 15 and the treatment liquid while making the inside of the treatment liquid passage 65 liquid-tight.
Next, a modification of the substrate processing that can be executed by the substrate processing apparatus 1 according to the first embodiment will be described.

FIG. 13 is a schematic view for explaining a first modification of the substrate processing according to the first embodiment.
In the substrate processing according to FIGS. 12A to 12E, the supply of the processing liquid to the upper surface of the substrate W and the supply of the processing liquid to the lower surface of the substrate W are started at the same time. However, the supply of the treatment liquid to the upper surface of the substrate W and the supply of the treatment liquid to the lower surface of the substrate W do not have to be started at the same time.
In particular, in the first modification of the substrate processing, as shown in FIG. 13, the supply of the chemical solution (DHF) to the upper surface of the substrate W is started, and the lower surface of the second extending portion 76B of the second guard 71B and the second 2 With the liquid film 200 of the chemical solution formed on the inner peripheral surface of the tubular portion 75B, the supply of the chemical solution (DHF) is started toward the lower surface of the substrate W (see FIG. 12A). In this case, the following effects are obtained.

In the substrate processing described with reference to FIGS. 12A to 12E, the supply of the chemical solution to the upper surface of the substrate W and the supply of the chemical solution to the lower surface of the substrate W are started at the same time. Therefore, the chemical solution discharged from the lower guide surface 61 may be received by the second guard 71B before the liquid film 200 of the chemical solution is formed on the second guard 71B.
On the other hand, if the supply of the chemical solution to the lower surface of the substrate W is a substrate process started while the chemical solution is being supplied to the upper surface of the substrate W as in this modification, the chemical solution is discharged from the lower guide surface 61. The chemical solution is discharged from the upper guide surface 60 and is passed through the second extending portion 76B (upper extending portion) and the second tubular portion (central tubular portion) of the second guard 71B (upper guard). Received by guard 71B. The impact when the chemical solution discharged from the lower guide surface 61 is received by the second guard 71B is absorbed by the liquid film 200 of the chemical solution transmitted through the second guard 71B.

Therefore, the generation of droplets and mist due to the collision with the second guard 71B can be suppressed as compared with the case where the supply of the chemical solution to the upper surface of the substrate W and the supply of the chemical solution to the lower surface of the substrate W are started at the same time. ..
In this modification, a chemical solution is used as the treatment solution, and a plurality of guards 71 are arranged in the second arrangement. However, even if the treatment solution is a liquid other than the chemical solution (rinse solution, drying accelerator solution, etc.) Alternatively, the arrangement of the plurality of guards 71 may be the first arrangement or the third arrangement.

14A and 14B are schematic views for explaining a second modification of the substrate processing according to the first embodiment.
In the substrate treatment according to FIGS. 12A to 12E, the radial inner end of the lower extension portion (first extension portion 76A or second extension portion 76B) is the outer annular member 13 at the discharge space formation position. It is a position located below the lower guide surface 61. However, the discharge space forming position may be a position different from the above-mentioned position as long as the treatment liquid discharge space 66 can be formed.

For example, in the second modification of the substrate processing, the discharge space formation position is such that the radial inner end portion of the lower extension portion is the upper guide surface 60 and the lower guide surface 61 of the outer annular member 13 in the vertical direction. It is a position located in between.
Specifically, in the substrate processing according to the second modification, when the arrangement of the plurality of guards 71 is the first arrangement, as shown in FIG. 14A, the second extending portion 76B of the second guard 71B is radially inward. The end portion is located between the upper guide surface 60 and the lower guide surface 61 of the outer annular member 13 in the vertical direction.

In such a substrate treatment, the treatment liquid discharged from the lower guide surface 61 of the outer annular member 13 is the lower extension portion (second extension portion 76B) of the lower guard (second guard 71B). Scatters from the outer annular member 13 below and is received by the second guard 71B. On the other hand, the treatment liquid discharged from the upper guide surface 60 is received by the upper guard (third guard 71C). Specifically, the treatment liquid discharged from the upper guide surface 60 moves in the treatment liquid discharge space 66 in the radial outward direction along the lower surface 76c of the third extension portion 76C.

Therefore, the treatment liquid discharged from the upper surface of the substrate W and the lower surface of the substrate W are discharged from the upper surface of the substrate W while efficiently suppressing the contamination of the substrate caused by the collision of the treatment liquid discharged from the upper surface of the substrate W with the surrounding members. The discharged processing liquid can be received by a separate guard 71. In particular, it is useful to apply this modification when the type of the treatment liquid supplied to the upper surface of the substrate W and the type of the treatment liquid supplied to the lower surface of the substrate W are different from each other. By applying this modification, the treatment liquid discharged from the upper surface of the substrate W and the treatment liquid discharged from the lower surface of the substrate W can be collected separately.

When the arrangement of the plurality of guards 71 is the second arrangement, as shown in FIG. 14B, the radial inner end portion of the first extending portion 76A of the first guard 71A guides the outer annular member 13 upward in the vertical direction. It is located between the surface 60 and the lower guide surface 61. Also in this case, the treatment liquid discharged from the upper surface of the substrate W and the treatment liquid discharged from the lower surface of the substrate W can be received by separate guards 71. Specifically, the treatment liquid discharged from the lower guide surface 61 is received by the lower guard (first guard 71A). The treatment liquid discharged from the upper guide surface 60 is received by the intermediate guard (second guard 71B). Specifically, the treatment liquid discharged from the upper guide surface 60 is transmitted through the lower surface 76c of the third extension portion 76C, the second inclined end surface 78, and the lower surface 76b of the second extension portion 76B, and is inside the treatment liquid discharge space 66. To the radial outer RO.

FIG. 15 is a schematic view for explaining a third modification of the substrate processing according to the first embodiment.
In the substrate processing according to FIGS. 12A to 12E, the third guard 71C is arranged at a position close to the guide surface. As shown in FIGS. 12A to 12E, when the third guard 71C is located close to the guide surface, the amount of gas exhausted from the processing liquid discharge space 66 by the exhaust unit 25 is outside the inner annular member 14. It is limited by a gap between the end surface and the inner end surface of the outer annular guide portion 15 and a gap between the lower surface of the inner annular member 14 and the upper surface of the substrate W.

As shown in FIG. 15, if the third guard 71C is arranged at the position where the facing guide surface 80a of the outer annular guide portion 15 is located above the upper surface of the inner annular member 14 and the exhaust amount is increased, the gas is released to the outer annular guide portion 15. It is exhausted to the second cup 72B through between the facing guide surface 80a and the upper surface of the inner annular member 14. Therefore, the displacement of the gas exhausted from the processing liquid discharge space 66 can be increased.

<Second Embodiment>
Next, the substrate processing apparatus 1P according to the second embodiment of the present invention will be described. FIG. 16 is a cross-sectional view of the periphery of the peripheral edge of the substrate W in the processing unit 2 according to the second embodiment. In FIG. 16, the same reference numerals as those in FIGS. 1 and the like are added to the same configurations as those shown in FIGS.

In the processing unit 2 according to the second embodiment, the inner guide surface 63 of the inner annular member 14 faces both the upper guide surface 60 and the peripheral edge of the upper surface of the substrate W from above. Then, the gap between the outer end surface 14b of the inner annular member 14 and the inner end surface 15a of the outer annular guide portion 15 is located above the upper guide surface 60.
When the treatment liquid existing on the upper surface of the substrate W enters between the upper guide surface 60 of the outer annular member 13 and the opposing guide surface 80a of the outer annular guide portion 15, it collides with the outer annular guide portion 15 and bounces off. It may adhere to the outer end surface 14b of the inner annular member 14 (see the thick line arrow shown in FIG. 16). If the gap between the inner annular member 14 and the outer annular guide portion 15 is located above the upper guide surface 60 as in the second embodiment, the liquid of the treatment liquid dropped from the inner annular member 14 The droplets adhere to the upper guide surface 60, not the upper surface of the substrate W. Therefore, it is possible to prevent the treatment liquid, whose movement to the inward RI in the radial direction by the inner annular member 14, from adhering to the upper surface of the substrate W.

When the treatment liquid moves from the peripheral edge of the upper surface of the substrate W to the outer annular member 13, the treatment liquid and the inner end surface 13a of the outer annular member 13 may be caused by a slight step between the substrate W and the outer annular member 13. May collide and the treatment liquid may splash up.
In this embodiment, in a plan view, a part of the inner annular member 14 (the portion of the radial outer RO) overlaps with the part of the outer annular member 13 (the portion of the radial inner RI). In other words, the inner guide surface 63 of the inner annular member 14 is located close to the inner end surface 13a and the upper guide surface 60 of the outer annular member 13. Therefore, even if the treatment liquid bounces off by colliding with the inner end surface 13a of the outer annular member 13, the bounced treatment liquid is received by the inner guide surface 63 of the inner annular member 14. Therefore, it is possible to prevent the splashed treatment liquid from passing through the gap between the inner annular member 14 and the outer annular guide portion 15, and prevent the treatment liquid from moving to the upper side of the inner annular member 14. it can.

<Third Embodiment>
Next, the substrate processing apparatus 1Q according to the third embodiment of the present invention will be described. FIG. 17 is a cross-sectional view of the periphery of the peripheral edge of the substrate W in the processing unit 2 according to the third embodiment of the present invention. In FIG. 17, the same reference numerals as those in FIGS. 1 and the like are added to the configurations equivalent to the configurations shown in FIGS. 1 to 16 described above, and the description thereof will be omitted.

In the processing unit 2 according to the third embodiment, the gap 120 between the inner annular member 14 and the outer annular guide portion 15 is a labyrinth gap.
Specifically, the inner annular member 14 faces the peripheral edge of the upper surface of the substrate W from above, and the inner portion 130 faces the radial inner end of the outer annular guide portion 15 in close proximity to the radial inner RI. It has an outer portion 131 extending radially outward RO from the inner portion 130 and facing the outer annular guide portion 15 from above. The gap 120 is formed between the vertical gap 121 formed between the inner portion 130 and the outer annular guide portion 15 and between the outer portion 131 and the outer annular guide portion 15, and is radially outward from the upper end of the vertical gap 121. Includes a horizontal gap 122 extending towards the RO.

The substrate processing apparatus 1Q according to the third embodiment can also execute the same substrate processing as the substrate processing apparatus 1 according to the first embodiment.
Droplets and mist of the treatment liquid generated by the collision between the treatment liquid and the outer annular guide portion 15 (see the thick line arrow shown in FIG. 17) form a gap 120 between the inner annular member 14 and the outer annular guide portion 15. There is a possibility that the inner annular member 14 and the outer annular guide portion 15 may move upward via the inner annular member 14. Droplets and mist of the treatment liquid that have moved above the inner annular member 14 and the outer annular guide portion 15 may drift in the surrounding space and finally adhere to the upper surface of the substrate W.

According to the third embodiment, the gap 120 between the inner annular member 14 and the outer annular guide portion 15 is the labyrinth gap. Therefore, it is possible to prevent droplets and mist of the treatment liquid from passing through the gap 120. It is possible to suppress the movement above the inner annular member 14 and the outer annular guide portion 15. As a result, it is possible to prevent the upper surface of the substrate W from being contaminated.
Further, the gap 120 is composed of a vertical gap 121 and a horizontal gap 122 extending horizontally from the upper end of the vertical gap 121. Therefore, even if droplets or mist of the treatment liquid generated by the collision between the outer annular guide portion 15 and the treatment liquid enter the vertical gap 121, the outer portion 131 of the outer annular guide portion 15 at the upper end of the vertical gap 121. Collide with. Therefore, it is possible to prevent the mist and droplets of the treatment liquid from moving from the upper end of the vertical gap 121 from the horizontal gap 122 and being discharged to the outside.

<Fourth Embodiment>
Next, the substrate processing apparatus 1R according to the fourth embodiment of the present invention will be described. FIG. 18 is a cross-sectional view of the periphery of the peripheral edge of the substrate W in the processing unit 2 according to the fourth embodiment of the present invention, and is an arrangement of a plurality of guards 71 when the substrate W is carried into the processing unit 2 (board transfer). It is a schematic diagram for demonstrating the arrangement). FIG. 19 is a schematic view for explaining the arrangement of a plurality of guards 71 when supplying the processing liquid to the substrate W in the processing unit 2 according to the fourth embodiment.

In FIGS. 18 and 19, the same reference numerals as those in FIGS. 1 and the like are added to the same configurations as those shown in FIGS. 1 to 17 described above, and the description thereof will be omitted.
The main difference between the substrate processing apparatus 1R according to the fourth embodiment and the substrate processing apparatus 1 according to the first embodiment is the number of guards 71 and cups 72. Specifically, the processing unit 2 according to the fourth embodiment further includes a fourth guard 71D and a fourth cup 72D.

The fourth guard 71D is arranged above the third guard 71C, and is arranged so as to surround the spin base 21 at the radial outer RO of the substrate W with respect to the third guard 71C.
The fourth guard 71D has a substantially cylindrical shape, and the upper end portion of the fourth guard 71D is inclined inward toward the radial inward RI. The fourth cup 72D has the form of an annular groove that is open upward. The fourth cup 72D is integrally formed with the third guard 71C.

The fourth guard 71D is arranged radially outward from the third tubular portion 75C and surrounds the spin base 21 in a plan view. The fourth tubular portion 75D and the fourth tubular portion 75D are radially inward from the upper end of the fourth tubular portion 75D. Includes an annular fourth extension 76D extending in the direction RI. The fourth extension 76D faces the third extension 76C from above. The fourth extension portion 76D is inclined with respect to the horizontal direction so as to be upward toward the radial inward RI. The inclination angle of the fourth extending portion 76D with respect to the horizontal direction is preferably larger than 0 ° and 45 ° or less. It is more preferable that the inclination angle of the fourth extending portion 76D with respect to the horizontal direction is 5 ° or more and 20 ° or less.

The fourth guard 71D is raised and lowered by the guard raising and lowering unit 74. The fourth guard 71D can be raised and lowered between the upper position and the substrate transport position (the position of the fourth guard 71D shown in FIG. 18). Since the third guard 71C cannot move to the lower position, the fourth guard 71D does not receive the processing liquid scattered from the substrate W.
The substrate transport position is the position of the fourth guard 71D when transporting the substrate W in the processing unit 2. When the 4th guard 71D is located at the substrate transport position, the fourth extension portion 76D of the 4th guard 71D is radially inward on the upper surface of the 3rd extension portion 76C of the 3rd guard 71C located near the guide surface. The edges touch.

In this embodiment, when the arrangement of the plurality of guards 71 is the substrate transfer arrangement, the third guard 71C is located at a position close to the guide surface, and the fourth guard 71D is located at the board transfer position.
Since the outer annular guide portion 15 has a stepped shape that goes upward toward the radial inward RI, when the fourth guard 71D is located at the substrate transport position, the fourth extension portion 76D is the outer annular guide portion. It is located below the radial inner end of 15. Therefore, the access gap G into which the hand H2 of the transfer robot CR enters is not narrowed by the fourth guard 71D. That is, also in the fourth embodiment, the access gap G is a gap between the inner guide surface 63 of the inner annular member 14 and the upper surface of the radial inner end portion of the outer annular guide portion 15.

Regardless of whether the plurality of guards 71 are in the first arrangement, the second arrangement, or the third arrangement, the fourth guard 71D is placed on the upper surface of the third extension portion 76C of the third guard 71C and the fourth guard. It can be arranged at a capture space forming position that forms a capture space 67 with the lower surface 76d of the fourth extension portion 76D of the 71D (capture space formation step). FIG. 19 shows a state in which the fourth guard 71D is arranged at the capture space forming position in the first arrangement. The fourth guard 71D functions as a capture guard formed by the capture space 67.

The capture space 67 is when the processing liquid discharged from any of the nozzles (first moving nozzle 8, second moving nozzle 9, third moving nozzle 10 or fourth moving nozzle 11) lands on the upper surface of the substrate W. It is a space for capturing the mist etc. generated in. The exhaust unit 25 (see FIG. 2) exhausts the inside of the capture space 67 to form an air flow F3 toward the radial outer RO, thereby promoting the inflow of the processing liquid mist into the capture space 67. it can.

If the mist of the treatment liquid generated by the collision between the treatment liquid and the upper surface of the substrate W is captured, the capture space 67 is provided so that the substrate W is caused by the mist generated by the supply of the treatment liquid to the upper surface of the substrate W. Pollution can be suppressed.
Also in the fourth embodiment, the same substrate processing as in the first embodiment can be performed except for the arrangement of the fourth guard 71D. Moreover, the same effect as that of the first embodiment is obtained.

<Fifth Embodiment>
Next, the substrate processing apparatus 1S according to the fifth embodiment of the present invention will be described. FIG. 20 is a cross-sectional view of the periphery of the peripheral edge of the substrate W in the processing unit 2 according to the fifth embodiment of the present invention. In FIG. 20, the same reference numerals as those in FIGS. 1 and the like are added to the same configurations as those shown in FIGS. 1 to 19 and the description thereof will be omitted.

The main difference between the substrate processing apparatus 1S according to the fifth embodiment and the substrate processing apparatus 1R according to the fourth embodiment is that the processing unit 2 is not provided with the inner annular member 14.
Therefore, unlike the substrate processing apparatus 1 according to the first embodiment, the substrate processing apparatus 1S according to the fourth embodiment has a peripheral edge of the upper surface of the substrate W from the moving nozzle (for example, the first moving nozzle 8) in the substrate processing. The treatment liquid can be supplied toward the unit.

In particular, as shown in FIG. 20, when physically cleaning the peripheral edge of the upper surface of the substrate W, a configuration in which the inner annular member 14 is not provided is useful. The physical cleaning is, for example, cleaning the upper surface of the substrate W by applying the physical force of the droplet 210 by ejecting the treatment liquid in the droplet state from the nozzle toward the upper surface of the substrate W. The physical force of the droplet 210 of the treatment liquid is the impact (kinetic energy) when the droplet 210 of the treatment liquid collides with the upper surface of the substrate W.

When the nozzle for discharging the treatment liquid is located near the peripheral edge of the upper surface of the substrate W, the mist generated by the collision between the treatment liquid supplied to the upper surface of the substrate W and the upper surface of the substrate W is particularly generated by the outer annular guide portion 15. Or easily adheres to the third guard 71C. Therefore, if the fourth guard 71D is arranged at the capture space forming position to provide the capture space 67, the mist can be captured even when the mist is generated at the peripheral edge of the upper surface of the substrate W. Therefore, it is possible to suppress contamination of the substrate W due to mist generated by supplying the treatment liquid to the upper surface of the substrate W.

Also in the fifth embodiment, the same substrate processing as in the first embodiment can be performed except for the arrangement of the fourth guard 71D. Further, the same effect as that of the first embodiment is obtained except for the effect of the inner annular member 14.
<Sixth Embodiment>
Next, the substrate processing apparatus 1T according to the sixth embodiment of the present invention will be described. FIG. 21 is a cross-sectional view of the periphery of the peripheral edge of the substrate W in the processing unit 2 according to the sixth embodiment of the present invention. In FIG. 21, the same reference numerals as those in FIGS. 1 and the like are added to the same configurations as those shown in FIGS.

The main difference between the substrate processing apparatus 1T according to the sixth embodiment and the substrate processing apparatus 1 according to the first embodiment is that the outer annular guide portion 15 is not provided. The processing unit 2 according to the sixth embodiment has a first outer annular member 13T having the same configuration as the outer annular member 13 according to the first embodiment, and a second outer side facing the upper guide surface 60 from above at intervals. Includes an annular member 15T.

The first outer annular member 13T is an example of the first annular guide portion, and the second outer annular member 15T is an example of the second annular guide portion. Therefore, in this embodiment, the second outer annular portion is formed separately from the upper guard.
The second outer annular member 15T has an upper surface, a lower surface, an end surface of the radial inner RI (inner end surface 15a), and an end surface of the radial outer RO (outer end surface 15b).

The upper surface and the lower surface of the second outer annular member 15T are annular in a plan view, respectively. The upper surface of the second outer annular member 15T is horizontally flat.
The lower surface of the second outer annular member 15T is composed of an opposed guide surface 140 and an outer rebound suppressing surface 141.
The facing guide surface 140 faces the upper guide surface 60 of the first outer annular member 13T, and guides the treatment liquid existing on the upper guide surface 60 to the outer RO in the radial direction together with the upper guide surface 60. The outer bounce suppressing surface 141 suppresses the treatment liquid from colliding with the second outer annular member 15T and rebounding when entering between the upper guide surface 60 and the facing guide surface 140.

The facing guide surface 140 is flat in the horizontal direction. The facing guide surface 140 is connected to the outer end surface 15b and the radial outer end of the outer bounce suppressing surface 141. The outer rebound suppressing surface 141 is connected to the radial inner end and the inner end surface 15a of the facing guide surface 80a, and is inclined downward toward the radial outer RO.
The processing unit 2 according to the sixth embodiment has a first fixing member 16T having the same configuration as the fixing member 16 according to the first embodiment, and a second fixing that fixes the positions of the second outer annular member 15T with respect to the spin base 21. Includes member 145. The second fixing member 145 is a columnar shape extending in the vertical direction. For example, the same number of second fixing members 145 as those of the first fixing member 16T are provided, and the second fixing members 145 are arranged at equal intervals in the rotation direction (circumferential direction) of the substrate W.

Since the second outer annular member 15T is fixed to the spin base 21 via the second fixing member 145, the height position of the second outer annular member 15T is constant regardless of the elevation of the third guard 71C. ..
Also in the substrate processing apparatus 1T according to the sixth embodiment, the same substrate processing as the substrate processing apparatus 1 according to the first embodiment can be executed. However, the arrangement of the guard 71 has a higher degree of freedom than that of the first embodiment.

That is, since the processing unit 2 according to the sixth embodiment is not provided with the outer annular guide portion 15 (see FIG. 5A) connected to the third extension portion 76C of the third guard 71C, in the substrate processing, Any guard 71 can be arranged near the guide surface. Further, if the guard 71 (lower guard) is arranged below the guard 71 (upper guard) arranged near the guide surface, it can be arranged at the discharge space forming position. The second outer annular member 15T faces the extending portion (upper extending portion) of the guard 71 (upper guard) arranged at a position close to the guide surface in the radial direction from the inner RI.

FIG. 21 shows a state in which the third guard 71C is located near the guide surface and the second guard 71B is located at the discharge space forming position. The radial inner end of the second extending portion 76B of the second guard 71B is located below the lower guide surface 61 of the outer annular member 13. The second outer annular member 15T faces the third extending portion 76C of the third guard 71C arranged at a position close to the guide surface in the radial direction from the inner RI.

According to the sixth embodiment, the same effect as that of the first embodiment is obtained. However, since the second outer annular member 15T is formed separately from the guard 71, the treatment liquid discharged from the first outer annular member 13T to the outer RO in the radial direction is in the state of the liquid film 200 (continuous flow). In the state), in order to smoothly transmit from the facing guide surface 140 of the second outer annular member 15T to the lower surface of the extension portion (for example, the third extension portion 76C), one of the guards 71 is placed in a position close to the guide surface. It is necessary to arrange the guard 71 so that the extension portion (for example, the third extension portion 76C) is sufficiently close to the guard 71.

As shown by the alternate long and short dash line in FIG. 21, the radial inner end of the second extending portion 76B of the second guard 71B located at the discharge space forming position is from the lower guide surface 61 of the first outer annular member 13T. May also be located below. In this case, similarly to the second modification of the first embodiment, the treatment liquid discharged from the upper surface of the substrate W and the treatment liquid discharged from the lower surface of the substrate W can be collected separately.
According to the sixth embodiment, the second outer annular member 15T can be rotated with the rotation of the substrate W. Therefore, the first outer annular member 13T and the second outer annular member 15T rotate synchronously. Synchronous rotation means rotating in the same direction and at the same speed. Therefore, it is possible to suppress the generation of turbulent flow in the treatment liquid existing in the treatment liquid passage 65. Therefore, the treatment liquid can smoothly pass through the treatment liquid passage 65.

<7th Embodiment>
Next, the substrate processing apparatus 1U according to the seventh embodiment of the present invention will be described. FIG. 22 is a cross-sectional view of the periphery of the peripheral edge of the substrate W in the processing unit 2 according to the seventh embodiment of the present invention. In FIG. 22, the same reference numerals as those in FIGS. 1 and the like are added to the same configurations as those shown in FIGS. 1 to 21 and the description thereof will be omitted.

The substrate processing apparatus 1U according to the seventh embodiment has substantially the same configuration as the substrate processing apparatus 1T according to the sixth embodiment, except that the inner annular member 14 is not provided. Therefore, the substrate processing apparatus 1U according to the seventh embodiment can execute the same substrate processing as the substrate processing apparatus 1T according to the sixth embodiment.
<8th Embodiment>
Next, the substrate processing apparatus 1V according to the eighth embodiment of the present invention will be described. FIG. 23 is a cross-sectional view of the periphery of the peripheral edge of the substrate W in the processing unit 2 according to the eighth embodiment of the present invention. In FIG. 23, the same reference numerals as those in FIGS. 1 and the like are added to the same configurations as those shown in FIGS. 1 to 22 and the description thereof will be omitted.

The substrate processing apparatus 1V according to the eighth embodiment has substantially the same configuration as the substrate processing apparatus 1T according to the sixth embodiment, except that the inner annular member 14 and the second outer annular member 15T are not provided. ..
<Other Embodiments>
The present invention is not limited to the embodiments described above, and can be implemented in still other embodiments.

For example, the number of guards 71 in the first embodiment may be two. That is, it may be a configuration in which only the third guard 71C and the second guard 71B are provided, or a configuration in which only the third guard 71C and the first guard 71A are provided.
Further, in each of the above-described embodiments, the first moving nozzles 8 to the fourth moving nozzles 11 are provided as nozzles for supplying the processing liquid to the upper surface of the substrate W.

Further, in the above-described embodiment, the treatment liquid fills the gap between the outer annular member 13 and the outer annular guide portion 15 (treatment liquid passage 65) and the gap between the upper surface of the substrate W and the inner annular member 14. It is passing in a dense state. In this case, it is possible to prevent the mist of the treatment liquid from moving inwardly in the radial direction through these gaps. Further, the processing liquid can be rectified by the facing guide surface 80a of the outer annular guide portion 15 and the inner guide surface 63 of the inner annular member 14. However, the treatment liquid does not necessarily have to maintain the liquid-tight state when passing through these gaps, and even when the treatment liquid is not in the liquid-tight state, the effects of the above-described embodiments can be obtained. ..

In addition, various changes can be made within the scope of the claims.
In addition to the features described in the claims, the following features can be extracted from the specification and the accompanying drawings based on the first to eighth embodiments. These features can be arbitrarily combined with the features described in the section on means for solving the problem. The first outer annular member 13T shown in FIGS. 21 to 23 and the outer annular member 13 shown in FIGS. 1 to 20 are examples of the annular guide members in the following items A1 to A4.

A1. A board holding unit that holds the board horizontally,
A substrate rotation unit that rotates the substrate holding unit around a vertical axis passing through the center of the substrate held by the substrate holding unit.
An upper processing liquid supply unit that supplies the processing liquid toward the upper surface of the substrate held by the substrate holding unit, and
An annular guide member that surrounds a substrate held by the substrate holding unit in a plan view, and is present on the upper surface of the substrate when the substrate held by the substrate holding unit is rotated by the substrate rotating unit. An annular guide member having an upper guide surface that guides the treatment liquid outward in the radial direction from the peripheral edge of the upper surface of the substrate by centrifugal force.
An upper side having an upper extension portion extending in the radial direction and receiving a liquid discharged from the annular guide portion in a state where the lower surface of the upper extension portion is arranged at a position close to the guide surface close to the upper guide surface. With a guard
The lower extension portion is provided with a lower extension portion that faces the upper extension portion from below and extends in the radial direction, and a treatment liquid discharge space through which the treatment liquid discharged from the annular guide member passes is provided on the lower side together with the upper extension portion. A substrate processing apparatus further including a lower guard located at a discharge space forming position formed by an extension portion.

According to the invention described in A1, the treatment liquid supplied to the upper surface of the substrate is placed on the upper guide surface of the annular guide member radially outward from the peripheral edge of the substrate by centrifugal force based on the rotation of the substrate. You will be guided. Therefore, the treatment liquid on the upper guide surface forms a continuous flow (liquid film) outward in the radial direction, and is discharged to the outside of the annular guide member.
The upper guard is arranged at a guide surface proximity position where the upper extension portion is close to the radial outer end of the upper guide surface. Therefore, the treatment liquid discharged from the annular guide member travels outward in the radial direction along the upper extension portion of the upper guard close to the radial outer end of the upper guide surface while maintaining the continuous flow state. Move further. Therefore, it is possible to prevent the treatment liquid from colliding with the upper guard and rebounding the treatment liquid in the droplet state.

Since the treatment liquid passes through the treatment liquid discharge space while traveling through the upper extension portion of the upper guard, even if mist is generated from the treatment liquid that propagates through the upper extension portion for some reason, the mist spreads downward. It adheres to the installation part from above and prevents the mist from moving out of the treatment liquid discharge space. Therefore, it is possible to suppress the diffusion of the mist of the treatment liquid into the treatment liquid discharge space. Therefore, it is possible to prevent the mist of the treatment liquid from drifting around the substrate and finally adhering to the substrate.

As described above, it is possible to efficiently suppress the contamination of the substrate caused by the treatment liquid discharged from the substrate colliding with the surrounding members.
A2. The upper guide surface guides the treatment liquid outward in the radial direction from the peripheral edge of the upper surface of the substrate held by the substrate holding unit in the state of a liquid film, and the treatment liquid in the state of the liquid film is said. Item 2. The substrate processing apparatus according to Item A1, which is brought into contact with the lower surface of the upper extending portion of the upper guard located at a guide proximity position. Since the treatment liquid comes into contact with the lower surface of the upper extension portion in the state of the liquid film, it is transmitted to the lower surface of the upper extension portion while maintaining the state of the liquid film. Therefore, when the treatment liquid moves from the upper guide surface to the lower surface of the upper extension portion, the flow of the treatment liquid is not disturbed. As a result, the generation of mist in the treatment liquid can be suppressed.
A3. When the upper guard is located close to the guide surface, the distance between the lower surface of the upper extension portion and the upper guide surface in the vertical direction is equal to the thickness of the liquid film on the upper guide surface. , Item A2. Therefore, it is possible to prevent the treatment liquid in the liquid film state discharged from the annular guide member from colliding with the radial inward end of the upper extension portion and scattering the treatment liquid inward in the radial direction.
A4. The substrate holding unit includes a base and chuck pins that grip the substrate at positions spaced upward from the top surface of the base.
The substrate rotating unit has a spin motor that rotates a substrate held by the substrate holding unit by rotating the base.
Item 3. The substrate processing apparatus according to any one of Items 1 to 3, further comprising a fixing member that connects the annular guide member and the upper surface of the base and fixes the position of the annular guide member with respect to the base. According to this section, the annular guide member can be rotated with the rotation of the substrate. Therefore, the centrifugal force caused by the rotation of the substrate can be applied to the treatment liquid existing on the upper guide surface of the annular guide member. Therefore, the treatment liquid can be efficiently discharged from the annular guide member.

1: Substrate processing device 1P: Substrate processing apparatus 1Q: Substrate processing apparatus 1R: Substrate processing apparatus 1S: Substrate processing apparatus 1T: Substrate processing apparatus 1U: Substrate processing apparatus 1V: Substrate processing apparatus 8: First moving nozzle (upper processing liquid) Supply unit)
9: Second moving nozzle (upper treatment liquid supply unit)
10: Third moving nozzle (upper treatment liquid supply unit)
11: 4th moving nozzle (upper treatment liquid supply unit)
12: Bottom nozzle (lower treatment liquid supply unit)
13: Outer annular member (first outer annular guide portion)
13T: First outer annular member (first outer annular guide portion)
14: Inner annular member (inner annular guide)
15: Outer ring guide (second outer ring guide)
15T: Second outer annular member (second outer annular guide)
17: Connecting member 20: Chuck pin (board holding unit)
21: Spin base (board holding unit)
23: Spin motor (board rotation unit)
66: Treatment liquid discharge space 67: Capture space 60: Upper guide surface 61: Lower guide surface 63: Inner guide surface 71: Guard 71A: First guard (lower guard)
71B: 2nd guard (lower guard, middle guard)
71C: 3rd guard (upper guard)
71D: 4th guard (capture guard)
104: Support surface 112: Substrate receiving surface 27: Connecting member elevating unit 120: Gap (labyrinth gap)
121: Vertical gap 122: Horizontal gap 130: Inner part 131: Outer part 140: Facing guide surface R: Radial direction RI: Radial direction inner RO: Radial direction outer direction W: Board CR: Transfer robot (board transfer unit)
A1: Substrate rotation axis (vertical axis)

Claims (17)

A board holding unit that holds the board horizontally,
A substrate rotation unit that rotates the substrate holding unit around a vertical axis passing through the center of the substrate held by the substrate holding unit.
An upper processing liquid supply unit that supplies the processing liquid toward the upper surface of the substrate held by the substrate holding unit, and
It is a first annular guide portion that surrounds the substrate held by the substrate holding unit in a plan view, and is formed on the upper surface of the substrate when the substrate held by the substrate holding unit is rotated by the substrate rotating unit. A first annular guide portion having an upper guide surface that guides the existing treatment liquid outward in the radial direction centered on the vertical axis from the peripheral edge portion of the upper surface of the substrate by centrifugal force.
A second annular guide portion that surrounds the substrate held by the substrate holding unit in a plan view, faces the upper guide surface from above at intervals, and is a treatment liquid existing on the upper guide surface. A second annular guide portion having an opposite guide surface that guides outward in the radial direction together with the upper guide surface.
A treatment liquid that has an upper extension portion extending in the radial direction and is discharged from the first annular guide portion in a state where the lower surface of the upper extension portion is arranged at a position close to the guide surface close to the upper guide surface. With the upper guard to receive
The upper extension portion has a lower extension portion that faces the upper extension portion from below and extends in the radial direction, and a treatment liquid discharge space through which the treatment liquid discharged from the first annular guide portion passes is provided together with the upper extension portion. A substrate processing apparatus further including a lower guard located at a discharge space forming position formed by the lower extension portion. The lower processing liquid supply unit for supplying the processing liquid toward the lower surface of the substrate held by the substrate holding unit is further included.
When the first annular guide portion rotates the substrate held by the substrate holding unit to the substrate rotating unit, the treatment liquid existing on the upper surface of the substrate is centrifugally forced from the peripheral edge of the lower surface of the substrate. Also has a lower guide surface that guides outwards,
The discharge space forming position is a position where the end of the lower extending portion inward in the radial direction is located below the lower guide surface of the first annular guide portion.
The lower processing liquid supply unit starts supplying the treatment liquid while the treatment liquid is being supplied from the upper treatment liquid supply unit toward the upper surface of the substrate held by the substrate holding unit. The substrate processing apparatus according to 1. The lower processing liquid supply unit for supplying the processing liquid toward the lower surface of the substrate held by the substrate holding unit is further included.
The first annular guide portion guides the processing liquid existing on the lower surface of the substrate held by the substrate holding unit to the outside of the peripheral edge of the lower surface of the substrate in the radial direction. Have and
The discharge space forming position is located between the upper guide surface and the lower guide surface of the first annular guide portion in the vertical direction at the end of the lower extension portion inward in the radial direction. The substrate processing apparatus according to claim 1, which is a position. It has an intermediate extension portion that faces the upper extension portion from below, faces the lower extension portion from above, and extends in the radial direction, and extends outward in the radial direction along the lower surface of the upper extension portion. 1 to 3, further comprising an intermediate guard that can be arranged at a guard contact position where the intermediate extension portion contacts the upper extension portion so that the processing liquid flowing to the intermediate extension portion is guided to the lower surface of the intermediate extension portion. The substrate processing apparatus according to any one of the above. The invention according to any one of claims 1 to 4, further comprising a capture guard that faces the upper extension portion from above and forms a capture space for capturing the mist of the treatment liquid between the upper extension portion and the upper extension portion. The substrate processing apparatus described. 1. A claim 1 further includes an inner annular portion that faces the peripheral edge of the upper surface of the substrate held by the substrate holding unit from above and faces the second annular guide portion from the inside in the radial direction. The substrate processing apparatus according to any one of 5 to 5. The substrate holding unit has a support surface that supports the substrate from below at a position spaced upward from the upper surface of the base, and a radial outside of the substrate supported by the support surface. It includes a plurality of chuck pins having a grip portion that can be contacted and separated from the side and grips the substrate by contacting the substrate supported by the support surface.
A connecting member having a substrate receiving surface that receives the substrate from below and connecting the inner annular portion and the base.
A substrate transfer unit that mounts a substrate on the substrate receiving surface and carries out the substrate from the substrate receiving surface.
The retracted position below the first substrate delivery position where the substrate is delivered between the substrate receiving surface and the supporting surface, and the substrate transfer between the substrate receiving surface and the substrate transport unit. Further including a connecting member elevating unit for raising and lowering the connecting member to and from the second substrate delivery position to be performed.
The substrate processing apparatus according to claim 6, wherein when the connecting member is located at the retracted position, the inner annular portion faces the second annular guide portion in close proximity from the inside in the radial direction. The inner annular portion faces both the upper guide surface and the peripheral edge portion of the upper surface of the substrate held by the substrate holding unit from above.
The substrate processing apparatus according to claim 6 or 7, wherein the gap between the inner annular portion and the second annular guide portion is located above the upper guide surface. The substrate processing apparatus according to any one of claims 6 to 8, wherein the gap between the inner annular portion and the second annular guide portion is a labyrinth gap. An inner portion in which the inner annular portion faces the peripheral edge of the upper surface of the substrate from above and faces the radial inner end of the second annular guide portion in close proximity to the inner end in the radial direction, and the inner portion. It has an outer portion extending outward in the radial direction from above and facing the second annular guide portion from above.
The labyrinth gap is formed between the vertical gap formed between the inner portion and the second annular guide portion and between the outer portion and the second annular guide portion, and has a diameter from the upper end of the vertical gap. The substrate processing apparatus according to claim 9, further comprising a horizontal gap extending outward in the direction. The second annular guide portion and the upper guard are integrally formed.
The substrate processing apparatus according to any one of claims 1 to 10, wherein the facing guide surface and the lower surface of the upper extending portion are connected. The second annular guide portion is formed separately from the upper guard and is supported by the substrate holding unit.
The substrate processing apparatus according to any one of claims 1 to 10, wherein the second annular guide portion faces the upper extension portion in close proximity from the inside in the radial direction. The board holding process that holds the board horizontally,
An upper treatment liquid supply step of supplying the treatment liquid toward the upper surface of the substrate while rotating the substrate around a vertical axis passing through the central portion of the substrate.
Centrifugal force based on the rotation of the substrate is applied to the upper guide surface of the first annular guide portion which is arranged outside the peripheral edge of the substrate in the radial direction about the vertical axis and surrounds the substrate in a plan view. , The upper treatment liquid guiding step for guiding the treatment liquid existing on the upper surface of the substrate, and
A process existing on the upper guide surface by the facing guide surface and the upper guide surface of a second annular guide portion having facing the upper guide surface from above at intervals and surrounding the substrate. An upper treatment liquid discharge step of guiding the liquid outward in the radial direction and discharging the liquid outward from the first annular guide portion in the radial direction.
By arranging the upper guard having the upper extension portion extending inward in the radial direction at a position close to the guide surface where the lower surface of the upper extension portion is close to the upper guide surface, the first annular guide portion can be used. A discharge treatment liquid guiding step of guiding the discharged treatment liquid outward in the radial direction while following the lower surface of the upper extension portion.
By arranging the lower guard having the lower extending portion extending in the radial direction facing the upper extending portion from below at the discharge space forming position, the treatment liquid discharged from the first annular guide portion passes through. A substrate processing method including a discharge space forming step of forming a treatment liquid discharge space together with the upper guard. The first annular guide portion has a lower guide surface that guides the treatment liquid on the lower surface of the substrate outward in the radial direction by a centrifugal force based on the rotation of the substrate.
The discharge space forming position is a position where the end portion of the lower extension portion in the radial direction is located below the lower guide surface of the first annular guide portion.
The lower treatment liquid supply step of starting the supply of the treatment liquid to the lower surface of the substrate during the execution of the upper treatment liquid discharge step, and the lower treatment liquid supply step.
A lower treatment liquid guiding step of guiding the treatment liquid supplied to the lower surface of the substrate to the lower guide surface by a centrifugal force based on the rotation of the substrate.
13. The thirteenth aspect of the present invention further includes a lower treatment liquid discharge step of scattering and discharging the treatment liquid guided to the lower guide surface from the lower guide surface toward the lower surface of the upper extension portion. Substrate processing method. The first annular guide portion has a lower guide surface that guides the treatment liquid on the lower surface of the substrate outward in the radial direction by a centrifugal force based on the rotation of the substrate.
The discharge space forming position is located between the upper guide surface and the lower guide surface of the first annular guide portion in the vertical direction at the end of the lower extension portion inward in the radial direction. Position,
A lower treatment liquid supply step of supplying the treatment liquid toward the lower surface of the substrate while rotating the substrate around the vertical axis.
A lower treatment liquid guiding step of guiding the treatment liquid supplied to the lower surface of the substrate to the lower guide surface by a centrifugal force based on the rotation of the substrate.
The thirteenth aspect of the present invention further includes a lower treatment liquid discharge step of discharging the treatment liquid guided to the lower guide surface from the lower guide surface while being along the lower surface of the lower extension portion. Substrate processing method. An intermediate guard arranging step of arranging an intermediate guard having an intermediate extension portion that faces the upper extension portion from below and faces the lower extension portion from above and extends in the radial direction.
Further including a guard switching step of arranging the intermediate guard at a guard contact position where the intermediate extension portion contacts the upper extension portion and switching a guard for receiving the processing liquid discharged from the first annular guide portion. , The substrate processing method according to any one of claims 13 to 15. A capture guard facing the upper extension portion from above is arranged, and a capture space for capturing the mist of the treatment liquid generated by the upper treatment liquid discharge step is provided between the capture guard and the upper extension portion. The substrate processing method according to any one of claims 13 to 16, further comprising a step of forming a capture space to be formed in 1.

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