JP2023015669A - semiconductor equipment - Google Patents

Abstract

A semiconductor device having a reduced chip size while suppressing electric field concentration is provided.
Kind Code: A1 In a semiconductor device, a main portion 11a on the main portion 11a of the main portion 11a of the main portion 11a of the main portion 11a of the main portion 11a of the main portion 11a of the main portion 11a of the main portion 11a of the main portion 11a of the main portion 11a of the main portion 11a of the control electrode (gate electrode). There is no connecting portion for connecting the main portions 12a on the main portion 12a of the electrode and under the insulating film covering the main portion 13a, and the main portions 12a adjacent to each other are electrically connected via the connection wiring provided on the insulating film. connect effectively.
[Selection drawing] Fig. 1

Description

The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a plurality of main electrodes on a semiconductor substrate and control electrodes between the plurality of main electrodes.

A comb-shaped structure in which a source electrode and a drain electrode are intertwined on a semiconductor substrate is adopted as an electrode structure of a transistor. In the electrode structure of this transistor, a comb-shaped source electrode, a comb-shaped drain electrode, and a control electrode for controlling current flowing therebetween are arranged. Various structures have been proposed in order to improve the withstand voltage of a lateral semiconductor device having such an interdigitated electrode structure. For example, a structure has been proposed in which the electric field concentration at the tips of the comb-shaped electrodes is alleviated by making the distance between the electrodes at the tips wider than the distance between the electrodes in the straight parts (see, for example, Patent Document 1.).
It also has a comb-shaped source electrode, a comb-shaped drain electrode arranged in a crossing finger shape with respect to the source electrode, and a gate electrode arranged between the source electrode and the drain electrode 20 . A structure has been proposed in which the curvature radius of the curved portion of the gate electrode extending along the portion is larger at the outermost tip portion of the source electrode than at other tip portions of the source electrode (see, for example, Patent Document 2). .).

JP 2013-98222 A JP 2017-147264 A

However, increasing the radius of curvature of the gate electrode increases the size of the semiconductor device.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device in which electric field concentration is suppressed and the chip size is reduced.

In order to solve the above problems, a semiconductor device according to one or more embodiments includes a semiconductor substrate, a first main electrode provided on the semiconductor substrate and extending in a first direction, and a main electrode provided on the semiconductor substrate. , a first main electrode connection portion extending in a second direction different from the first direction and connecting one ends of adjacent first main electrodes to each other; a second main electrode spaced from one main electrode and extending in a first direction; and a control electrode provided on a semiconductor substrate and formed between the first main electrode and the second main electrode. a first connecting portion of the control electrode provided on the semiconductor substrate and connecting one ends of adjacent control electrodes outside the other end of the first main electrode to each other; a second connection portion of the control electrode provided between the connection portion of the first main electrode and the second main electrode to connect the other ends of the adjacent control electrodes; , the insulating film provided on the second main electrode and on the control electrode does not have a connecting part under the insulating film for connecting the second main electrodes adjacent to each other outside the first connecting part, Adjacent second main electrodes are electrically connected via a connection wiring provided on the insulating film.

According to the above configuration, it is possible to provide a semiconductor device with a reduced chip size while suppressing electric field concentration.

FIG. 1 is a plan view of a semiconductor device according to one or more embodiments. FIG. 2 is a modified plan view of a semiconductor device according to one or more embodiments. FIG. 3 is a cross-sectional view of a semiconductor device according to one or more embodiments.

The details of one or more embodiments are described with reference to the drawings. In the following description of the drawings, the same or similar parts may be given the same or similar reference numerals. The descriptions in the drawings are schematic, and the relationship between thickness and dimensions, the thickness ratio of each layer, and the like are examples, and do not limit the technical idea of the invention. In addition, there are cases where mutual dimensional relationships and ratios are different between drawings. In the following embodiments, a case where the first conductivity type is n-type and the second conductivity type is p-type will be exemplified. In some cases, the second conductivity type may be n-type. In the following description, when describing the positional relationship of members, "upper", "lower", "right", "left", etc. will be used as necessary based on the orientation of the drawing to which reference is made. It does not limit the technical idea of Also, descriptions such as "upper", "lower", "right", and "left" may be used when the members are not in contact with each other.

FIG. 1 is a plan view of a semiconductor device 1. FIG. The semiconductor device 1 has a first main electrode such as a source electrode 11 and a second main electrode such as a drain electrode 12 formed on a semiconductor substrate 10 . Further, a control electrode 13 for controlling current flowing between the source electrode 11 and the drain electrode 12 is formed on the semiconductor substrate 10 .

The semiconductor substrate 10 is made of, for example, a nitride-based semiconductor, and a well-known two-dimensional electron gas layer is generated within the semiconductor substrate 10 . The source electrode 11 and the drain electrode 12 are connected to the two-dimensional electron gas layer with low resistance, and the control electrode 13 controls the two-dimensional electron gas layer to turn on/off the semiconductor device.

The source electrode 11 has a main portion 11a and a connecting portion 11b. The main portion 11a of the source electrode 11 extends in one direction, and one end of the main portion 11a of the adjacent source electrode 11 extends in the other direction intersecting the one direction via the connection portion 11b. connected to each other. The other end of the main portion 11 a of the source electrode 11 is not provided with a connecting portion and serves as the end of the source electrode 11 .

The drain electrode 12 has a main portion 12a extending in one direction. The width of the main portion 12a of the drain electrode 12 (width y in FIG. 1) is wider than the width of the main portion 11a of the source electrode 11 (width x in FIG. 1). At both ends of the main portion 12a of the drain electrode 12, a connection portion for connecting the main portion 12a of the adjacent drain electrode 12 is not formed on the semiconductor substrate, and the insulating film formed above the drain electrode 12 has a connection portion. Adjacent drain electrodes 12 are connected through wiring formed in the through holes and on the insulating film.

A main portion 13a of the control electrode (gate electrode) 13 extends in one direction. The main portions 13a of the control electrodes (gate electrodes) 13 adjacent to each other with the main portion 11a of the source electrode 11 interposed therebetween are connected by a first connecting portion 13b from the outside of the other end of the main portion 11a of the source electrode 11. do. A first connection portion 13 b is provided on the semiconductor substrate 1 . In addition, the main portion 13a of the control electrode (gate electrode) 13, which is adjacent to the main portion 12a of the drain electrode 12, is connected to the connection portion 11b of the source electrode 11 and the drain electrode 12 by the second connection portion 13c. Connecting. A second connection portion 13 c is provided on the semiconductor substrate 1 .

According to the semiconductor device 1, since the connecting portion of the drain electrode 12 is not provided on the semiconductor substrate 2, it is possible to suppress the chip size of the semiconductor substrate 2 from increasing. In addition, although the curvature of the first connection portion 13b of the control electrode (gate electrode) 13 becomes large, the connection portion of the drain electrode 12 is not provided so as to face the connection portion 13b. ) 13 and the drain electrode 12, and electric field concentration can be suppressed.

The distance from the main portion 11a of the source electrode 11 to the main portion 13a of the control electrode (gate electrode) 13 is longer than the distance from the main portion 13a of the control electrode (gate electrode) 13 to the main portion 12a of the drain electrode 12. It's getting shorter. It is desirable that the curvature of the first connecting portion 13b is larger than the curvature of the second connecting portion 13c. As a result, electric field concentration at the first connecting portion 13b can be alleviated. If the connection portion of the drain electrode 12 is provided outside the first connection portion 13b, the connection portion of the drain electrode 12 must be moved to the outside or the pattern thereof changed according to the curvature thereof, and the chip size becomes larger. However, since the semiconductor device 1 does not have a connecting portion for the drain electrode 12 on the semiconductor substrate 2, it is possible to suppress the increase in the chip size of the semiconductor substrate 2 while suppressing electric field concentration.

The dimension in one direction of the main portion 11a of the source electrode 11 is longer than the dimension in one direction of the main portion 12a of the drain electrode 12, and the other end of the main portion 11a of the source electrode 11 is It is desirable that it protrudes from the end of 12a (by the dimension z in FIG. 2). Since the connecting portion of the drain electrode 12 is not provided on the semiconductor substrate 2, the first connecting portion 13b of the control electrode (gate electrode) 13 is moved to the outside by protruding, so that the control electrode (gate electrode) 13 The distance between the first connection portion 13b of the drain electrode 12 and the end of the main portion 12a of the drain electrode 12 can be further ensured.

One or more of the embodiments described above are applicable not only to nitride semiconductors, but also to semiconductor devices including semiconductor substrates of other semiconductor materials such as silicon and silicon carbide.

Although embodiments have been described as above, the discussion and drawings forming part of this disclosure are not intended to limit the invention, and various alternative embodiments, examples and operational techniques will become apparent to those skilled in the art. . Thus, the present invention includes various embodiments and the like not described here. Therefore, the technical scope of the present invention is defined by the matters specifying the invention according to the scope of claims that are valid from the above description.

The invention is particularly applicable to power semiconductor devices.

1 semiconductor device 10 semiconductor substrate 11 source electrode 12 drain electrode 13 control electrode

Claims (2)

a semiconductor substrate;
a first main electrode provided on the semiconductor substrate and extending in a first direction;
a first main electrode connection portion provided on the semiconductor substrate, extending in a second direction different from the first direction, and connecting one ends of adjacent first main electrodes to each other;
a second main electrode provided on the semiconductor substrate and spaced from the first main electrode and extending in a first direction;
a control electrode provided on the semiconductor substrate and formed between the first main electrode and the second main electrode;
a first connection portion of the control electrode provided on the semiconductor substrate, outside the other end of the first main electrode, and connecting one ends of adjacent control electrodes to each other;
a second connection portion of the control electrode provided on the semiconductor substrate and connecting the other ends of adjacent control electrodes between the connection portion of the first main electrode and the second main electrode;
an insulating film provided on the first main electrode, the second main electrode, and the control electrode;
The second main electrodes adjacent to each other through a connection wiring provided on the insulating film without a connecting portion for connecting the adjacent second main electrodes outside the first connecting portion under the insulating film. and electrically connecting the main electrodes of the semiconductor device. 2. The semiconductor device according to claim 1, wherein the length of said second main electrode in the first direction is shorter than the length of said first main electrode in the first direction.

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