JP2024154994A - Semiconductor device and semiconductor module - Google Patents

Abstract

To provide a semiconductor device and a semiconductor module, in which the decrease in reliability can be suppressed.SOLUTION: A semiconductor device includes a substrate, a first conductive bonding member provided on the substrate, a semiconductor element provided on the first conductive bonding member, a second conductive bonding member provided on the semiconductor element, and an electrode terminal provided on the second conductive bonding member. The electrode terminal has a structure in which a first metal member and a second metal member with lower thermal conductivity than the first metal member are integrated. A surface of the electrode terminal that is in contact with the first conductive bonding member is entirely formed of the first metal member.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor device and a semiconductor module.

There is known a semiconductor device having a configuration in which a semiconductor element is mounted on a substrate via a first solder layer, and further, an electrode terminal for taking out an electrode is connected to the semiconductor element by a second solder layer. In a semiconductor device having such a configuration, when a plurality of electrode pads other than the electrode terminals are provided on the semiconductor element, the electrode terminals are connected by the second solder layer in a state in which the center of gravity of the semiconductor element or the first solder layer is misaligned with the center of gravity of the electrode terminal. However, in a state in which the center of gravity of the semiconductor element or the first solder layer is misaligned with the center of gravity of the electrode terminal, the semiconductor element is likely to tilt.
As a countermeasure to this problem, a semiconductor device has been proposed in which electrode terminals are formed by combining materials with different specific gravities, thereby suppressing the misalignment between the center of gravity of the solder layer or semiconductor element and the center of gravity of the electrode terminal (see, for example, Patent Documents 1 and 2).

JP 2016-152344 A JP 2015-156475 A

However, in the configurations of the semiconductor devices described in the above-mentioned Patent Documents 1 and 2, two materials with different specific gravities are in contact with the solder layer. As a result, the thermal conductivity of one of the materials is lower than that of the other material, and the heat dissipation ability of the semiconductor element decreases in the area where the material with low thermal conductivity comes into contact, making the heat resistance of the semiconductor device more likely to decrease. As a result, the reliability of the semiconductor device decreases.

To solve the above problems, the present invention provides a semiconductor device and a semiconductor module that can suppress deterioration in reliability.

The above and other objects of the present invention, as well as the novel features of the present invention, will become apparent from the description in this specification and the accompanying drawings.

The semiconductor device of the present invention comprises a substrate, a first conductive bonding member provided on the substrate, a semiconductor element provided on the first conductive bonding member, a second conductive bonding member provided on the semiconductor element, and an electrode terminal provided on the second conductive bonding member. The electrode terminal has a structure in which a first metal member and a second metal member arranged adjacent to the first metal member and having a lower thermal conductivity than the first metal member are integrated, and all of the surfaces of the electrode terminal that come into contact with the first conductive bonding member are formed of the first metal member.

The semiconductor module of the present invention includes a first semiconductor device having the above-described configuration and a second semiconductor device. The second semiconductor device includes a second substrate, a conductive bonding member provided on the second substrate, and a second semiconductor element provided on the conductive bonding member.

The present invention provides a semiconductor device and a semiconductor module that can suppress deterioration in reliability.

Note that issues, configurations, and advantages other than those described above will become clear from the explanation of the embodiments below.

FIG. 1 is a diagram illustrating a schematic configuration of a semiconductor module. FIG. 2 is a diagram for explaining the center of gravity position of the first semiconductor device; 11 is a diagram for explaining the inclination due to the center of gravity position of the first semiconductor device; FIG. FIG. 4 is a diagram showing a configuration of an electrode terminal. FIG. 4 is a diagram showing a configuration of an electrode terminal. 5A and 5B are diagrams for explaining the relationship between the configuration of an electrode terminal and the position of the center of gravity. 5A and 5B are diagrams for explaining the relationship between the configuration of an electrode terminal and the position of the center of gravity.

Below, an example of a semiconductor module and a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. Note that the present invention is not limited to the following example. In each of the drawings described below, common members are given the same reference numerals. Furthermore, in the drawings used in this specification, identical or corresponding components are given the same reference numerals, and repeated explanations of these components may be omitted.

[Semiconductor module]
The configuration of the semiconductor module of this embodiment will be described below.
The semiconductor module 1 shown in FIG. 1 is composed of a first semiconductor device 10 and a second semiconductor device 20 .
The first semiconductor device 10 has a configuration in which a first substrate 11, a first solder layer 12, a first semiconductor element 13, a second solder layer 14, and an electrode terminal 15 are laminated in this order. The electrode terminal 15 is composed of a first metal member 16 and a second metal member 17. The entire surface of the electrode terminal 15 that comes into contact with the second solder layer 14 is composed of the first metal member 16.

The second semiconductor device 20 includes a second substrate 21, and a second semiconductor element 23 and a capacitor 24 mounted on the second substrate 21 via a third solder layer 22. The first semiconductor device 10 and the second semiconductor device 20 are electrically connected by wiring 2. The wiring 2 is, for example, wire bonding (WB), and is connected to an electrode pad (not shown) provided on the first semiconductor element 13 and an electrode pad (not shown) provided on the second substrate 21.

Furthermore, in the semiconductor module 1, the entire surfaces of the first semiconductor device 10 and the second semiconductor device 20 are sealed with sealing resin 3, except for a portion of the electrode terminal 15 for extracting the electrodes. In the semiconductor module 1 shown in FIG. 1, the lower surface side of the first substrate 11 and the upper surfaces of the electrode terminals 15 are all exposed from the sealing resin 3. The sealing resin 3 is composed of an insulating resin, such as a thermosetting epoxy resin.

The first substrate 11 and the second substrate 21 are each formed of, for example, a lead frame for a semiconductor package.
The first solder layer 12, the second solder layer 14, and the third solder layer 22 are examples of conductive bonding members constituting the first semiconductor device 10 and the second semiconductor device 20. The conductive bonding members are made of conductive members capable of bonding the first semiconductor element 13, the second semiconductor element 23, the capacitor 24, and the electrode terminals 15. For example, the conductive bonding members are formed using a conductive paste such as a solder paste or a silver paste. The type of solder paste, the type of conductive paste, and the composition of the solder used in the solder paste are not particularly limited, and a known solder paste or conductive paste used in mounting semiconductor devices can be used.
The first solder layer 12 is formed on the entire surface of one main surface (back surface) of the first semiconductor element 13. The second solder layer 14 is formed on the entire surface of one surface of the electrode terminal 15 on the other main surface (front surface) of the first semiconductor element 13, at a position excluding an electrode to which wiring 2 such as a bonding pad is connected.

The first semiconductor element 13 is an element having a certain thickness, and is formed with an area smaller than that of the first substrate 11. The first semiconductor element 13 includes, for example, a power metal-oxide-semiconductor field-effect transistor (MOSFET) that is a switching element, and an insulated gate bipolar transistor (IGBT), a double-diffused metal oxide semiconductor (DMOS), etc. are formed in an internal semiconductor chip.
The second semiconductor element 23 is configured by, for example, a control IC (Integrated Circuit) including a capacitor 24 and the like.

(Method of manufacturing a semiconductor module)
The semiconductor module 1 is manufactured, for example, by the following process. First, a solder paste that will become the first solder layer 12 is applied onto the first substrate 11, and the first semiconductor element 13 is placed on this solder paste. Furthermore, a solder paste that will become the second solder layer 14 is applied onto the first semiconductor element 13, and the electrode terminals 15 are placed on this solder paste. Then, a reflow process is performed with the first substrate 11 to the electrode terminals 15 stacked together, melting the first solder layer 12 and the second solder layer 14 and joining the various components. Through the above process, the first semiconductor device 10 is formed.
Next, a third solder layer 22 is applied onto the second substrate 21, and a second semiconductor element 23 and a capacitor 24 are disposed on the third solder layer 22. Then, a reflow process is performed to melt the third solder layer 22 and bond each component. Through the above steps, the second semiconductor device 20 is formed.
Next, the electrode pads provided on the first semiconductor element 13 and the electrode pads provided on the second substrate 21 are connected by bonding wires, and the first semiconductor device 10 and the second semiconductor device 20 are electrically connected by wiring 2.
Next, the first semiconductor device 10 and the second semiconductor device 20 connected by the wiring 2 are entirely sealed with a sealing resin 3 .
Through the above steps, the semiconductor module 1 can be manufactured.

[Electrode terminal]
Next, the electrode terminals 15 constituting the first semiconductor device 10 will be described.
The electrode terminal 15 has a structure in which a first metal member 16 and a second metal member 17 arranged adjacent to the first metal member are joined at the upper side and integrated. The electrode terminal 15 is connected to an electrode of the first semiconductor element 13 by a second solder layer 14. An example of an electrode to which the electrode terminal 15 is connected is a source electrode of a MOSFET constituting the first semiconductor element 13. At least a part of the electrode terminal 15 is exposed to the outside of the sealing resin 3. Therefore, the electrode of the first semiconductor element 13 is taken out of the sealing resin 3 by the electrode terminal 15. In the structure shown in FIG. 1, the electrode terminal 15 is exposed to the upper part of the first semiconductor device 10 in the stacking direction.

(Center of gravity position)
2, the first semiconductor device 10 is mounted such that, in a projected view from the stacking direction, the center of gravity 12g of the first solder layer 12 and the center of gravity 13g of the first semiconductor element 13 coincide with the center of gravity 15g of the electrode terminal 15. That is, the center of gravity 12g, 13g, and 15g of each of the first solder layer 12, the first semiconductor element 13, and the electrode terminal 15 are arranged on a vertical line 5 in a cross section in the stacking direction passing through any one of the center of gravity positions 12g, 13g, and 15g. By arranging the center of gravity of each of the components on the line 5, the line 5 becomes a vertical perpendicular line passing through the center of gravity of the stacked structure from the first solder layer 12 to the electrode terminal 15 in the first semiconductor device 10.
2, the first solder layer 12 and the first semiconductor element 13 have their centers of gravity 12g, 13g located at the center. In contrast, the electrode terminal 15 is located at a position shifted from the center position 15c in the cross section in the stacking direction, and the first solder layer 12 and the first semiconductor element 13 have their center of gravity 15g located at a position shifted toward the center of gravity 12g, 13g. The method of arranging the center of gravity 15g of the electrode terminal 15 will be described later.

In the first semiconductor device 10 of this embodiment, the fact that the center positions 12g, 13g, and 15g are aligned does not mean that the center positions 12g, 13g, and 15g of each component need to be completely aligned when viewed projected in the stacking direction. For example, in the first semiconductor device 10 in which the first substrate 11 to the electrode terminal 15 are stacked, it is sufficient that the center positions 12g, 13g, and 15g are close to each other to the extent that no tilt occurs in the stacked structure when the first solder layer 12 and the second solder layer 14 are heated and melted.

In the case of a laminated structure such as the first semiconductor device 10, if the center positions 12g, 13g, and 15g of the first solder layer 12, the first semiconductor element 13, and the electrode terminal 15 do not coincide as described above, the laminated structure is likely to tilt as shown in FIG. 3. For example, in the first semiconductor device 10 in a state in which the first substrate 11 to the electrode terminal 15 are laminated, when the first solder layer 12 and the second solder layer 14 are melted by reflow or the like, a tilt occurs in the laminated structure of the first semiconductor device 10. This tilt of the laminated structure occurs due to a deviation between the vertical line 6 passing through the center position 12g of the first solder layer 12 and the center position 13g of the first semiconductor element 13, and the vertical line 7 passing through the center position 15g of the electrode terminal 15. In addition, the tilt in the first semiconductor device 10 occurs when the first solder layer 12 is melted. Therefore, the tilt of the first semiconductor device 10 is more likely to occur the greater the deviation between the center of gravity 15g of the electrode terminal 15 and the center of gravity 12g, 13g of the first solder layer 12 and the first semiconductor element 13. Therefore, it is sufficient that the center of gravity 12g, 13g, 15g of the first solder layer 12, the first semiconductor element 13, and the electrode terminal 15 are close to each other to the extent that tilt does not occur in the laminated structure when the first solder layer 12 melts.

(Heat conductive material)
The electrode terminals 15 also function as a thermally conductive member for transferring heat from the first semiconductor element 13 to the outside of the semiconductor module 1. For this reason, the electrode terminals 15 are formed as large as possible within the range of the upper surface of the first semiconductor element 13 so that the heat dissipation cross-sectional area is as large as possible.

The semiconductor module 1 includes, for example, a semiconductor device used for rectifying an alternator for an automobile. In such an application, a current accompanied by excessive heat may be supplied to the first semiconductor device 10. In this case, heat is generated inside the first semiconductor device 10, particularly the first semiconductor element 13. When heat is accumulated inside and the internal temperature exceeds, for example, 300° C., the PN junction of the semiconductor chip such as a silicon chip constituting the first semiconductor element 13 is destroyed, and the first semiconductor element 13 cannot maintain its performance.
For this reason, it is necessary to dissipate the heat of the first semiconductor element 13 from the electrode terminals 15. Therefore, in order to improve the heat dissipation from the first semiconductor element 13 to the electrode terminals 15, it is necessary to increase the thermal conductivity of the electrode terminals 15.

On the other hand, in a configuration such as electrode terminal 15, which combines multiple metal materials such as first metal member 16 and second metal member 17, the thermal conductivity of each metal in electrode terminal 15 is different. Therefore, electrode terminal 15 has a configuration that includes parts with high thermal conductivity and parts with low thermal conductivity due to the metal materials.

In the electrode terminal 15 composed of the above-mentioned multiple metal members, in order to efficiently transfer heat from the first semiconductor element 13 to the electrode terminal 15 via the second solder layer 14, it is preferable that the surface in contact with the second solder layer 14 is composed of a material with high thermal conductivity. In particular, the larger the surface area in contact between the metal material with high thermal conductivity and the second solder layer 14, the more efficiently the heat in the first semiconductor element 13 is transferred to the electrode terminal 15.

For this reason, it is preferable that at least the entire surface of the electrode terminal 15 that contacts the second solder layer 14 is formed from a metal material having a high thermal conductivity. Also, in the electrode terminal 15, the thermal conductivity of the first metal member 16 is higher than that of the second metal member 17. Therefore, the entire surface of the electrode terminal 15 that contacts the second solder layer 14 is formed from the first metal member 16 having a high thermal conductivity.
Furthermore, the first metal member 16, which has high thermal conductivity, is formed continuously up to the upper surfaces of the electrode terminals 15 exposed from the sealing resin 3 (FIG. 1). Therefore, the first semiconductor device 10 and the semiconductor module have improved heat dissipation from the electrode terminals 15 to the outside.
Furthermore, in the electrode terminal 15, a larger volume ratio of the first metal member 16 having high thermal conductivity can enhance the heat dissipation property of the first semiconductor element 13. For this reason, in the electrode terminal 15, the ratio of the first metal member 16 is preferably greater than the ratios of the other metal members including the second metal member 17.

(First metal member, second metal member)
As described above, the electrode terminal 15 is required to have a configuration that aligns the center of gravity with the first solder layer 12 and the first semiconductor element 13 and improves heat dissipation from the first semiconductor element 13. For this reason, as shown in Fig. 4, the electrode terminal 15 is composed of a first metal member 16 having a high thermal conductivity and a second metal member 17H that has a lower thermal conductivity than the first metal member 16 and is heavier and has a larger specific gravity than the first metal member 16. Alternatively, as shown in Fig. 5, the electrode terminal 15 is composed of a first metal member 16 having a high thermal conductivity and a second metal member 17L that has a lower thermal conductivity than the first metal member 16 and has a smaller specific gravity than the first metal member 16.

4 and 5, the stacking direction of the first semiconductor device 10 is shown as the z direction. The extension direction of the first metal member 16 and the second metal member 17 of the electrode terminal 15 perpendicular to the z direction is shown as the y direction. Furthermore, the joining direction between the first metal member 16 and the second metal member 17 perpendicular to both the z direction and the y direction is shown as the x direction.
In the following description, when there is no need to distinguish between the second metal member 17H, which has a greater specific gravity than the first metal member 16, and the second metal member 17L, which has a smaller specific gravity than the first metal member 16, they will simply be referred to as the second metal member 17.

As shown in Figures 4 and 5, the first metal member 16 and the second metal members 17H and 17L are each configured by combining and integrating blocks of a specific shape. For example, the electrode terminal 15 is composed of the first metal member 16 with an L-shaped cross section and the second metal member 17 with a rectangular parallelepiped shape that fills the inner surface side of the first metal member 16.

Moreover, the electrode terminal 15 has a configuration in which a lower layer 15d constituted only by the first metal member 16 and an upper layer 15u constituted by the first metal member 16 and the second metal member 17 are integrated in the z direction. The lower layer 15d side of the electrode terminal 15 is the side that contacts the second solder layer 14, and the upper layer 15u side is the side whose upper surface is exposed from the sealing resin 3.
The first metal member 16 and the second metal member 17 have a bonding surface in the x direction in the upper layer 15u of the electrode terminal 15, which extends in the y direction. The first metal member 16 and the second metal member 17 also have a bonding surface in the z direction at the interface between the upper layer 15u and the lower layer 15d of the electrode terminal 15, which extends in the y direction. The electrode terminal 15 is integrated by, for example, a method in which the surfaces of the first metal member 16 and the second metal member 17 are overlapped and rolled to cause diffusion bonding (alloying by element diffusion) at the interface between the materials.

The shapes of the first metal member 16 and the second metal member 17 are not particularly limited. As described later, it is sufficient that the surface in contact with the second solder layer 14 is formed by the first metal member 16. That is, it is sufficient that the electrode terminal 15 has a lower layer portion formed by the first metal member 16. Therefore, the configuration of the electrode terminal 15 other than the lower layer portion 15d in contact with the second solder layer 14 is not particularly limited as long as the first metal member 16 and the second metal member 17 are integrated. For example, the joint surface between the first metal member 16 and the second metal member 17 may be curved, or there may be three or more joint surfaces. In addition, the second metal member 17 may not extend over the entire y direction. Furthermore, a part or all of the second metal member 17 may be embedded in the first metal member 16. From the standpoint of productivity and reliability, it is preferable to combine a first metal member 16 having an L-shaped cross section with a second metal member 17 having a rectangular parallelepiped shape, as shown in Figures 4 and 5.

The electrode terminal 15 has a first metal member 16 with high thermal conductivity disposed on the entire surface of the side connected to the second solder layer 14, i.e., the side of the first semiconductor element 13. This configuration can improve the heat transfer from the first semiconductor element 13 to the electrode terminal 15, compared to a configuration in which the second metal member 17 is in contact with the second solder layer 14. This makes it possible to improve the heat resistance of the first semiconductor device 10 and the reliability of the semiconductor module 1.
There is no particular limitation on the thickness of the lower layer portion 15d in the electrode terminal 15. The thickness of the lower layer portion 15d and its ratio within the electrode terminal 15 can be designed arbitrarily depending on the heat dissipation properties of the electrode terminal 15, the design of the center of gravity position 15g of the electrode terminal 15, and the like.

Also, as shown in FIG. 4, the center of gravity 15g of the electrode terminal 15 is shifted toward the second metal member 17H and upward from the center position 15c in the cross section in the stacking direction. This is because the second metal member 17H has a greater specific gravity than the first metal member 16. In this way, when using the second metal member 17H having a greater specific gravity than the first metal member 16, the second metal member 17H is positioned closer to the center of gravity positions 12g, 13g of the first solder layer 12 and the first semiconductor element 13. That is, in the electrode terminal 15, the second metal member 17H is positioned closer to the vertical straight line 5 (FIG. 2) that passes through the center of gravity of the stacked structure of the first semiconductor device 10.

On the other hand, as shown in FIG. 5, the center of gravity 15g of the electrode terminal 15 is shifted toward the first metal member 16 and downward from the center position 15c in the cross section in the stacking direction. This is because the second metal member 17L has a smaller specific gravity than the first metal member 16. In this way, when using the second metal member 17L having a smaller specific gravity than the first metal member 16, the second metal member 17H is arranged farther from the center of gravity positions 12g, 13g of the first solder layer 12 and the first semiconductor element 13. That is, in the electrode terminal 15, the second metal member 17L is arranged farther from the vertical straight line 5 (FIG. 2) passing through the center of gravity of the stacked structure of the first semiconductor device 10.

As shown in Figures 4 and 5, by using a first metal member 16 and a second metal member 17 with different specific gravities, it is possible to shift the center of gravity 15g of the electrode terminal 15 from the central position 15c. Therefore, as described below, it is possible to align the center of gravity 15g of the electrode terminal 15 with the center of gravity positions 12g, 13g of the first solder layer 12 and the first semiconductor element 13. As a result, the inclination of the stacked structure of the first semiconductor device 10 can be suppressed.

(material)
The first metal member 16 is made of a metal material having a higher thermal conductivity than the second metal member 17. The first metal member 16 is made of, for example, copper or silver, which has a high thermal conductivity and excellent electrical conductivity.
The second metal member 17 is made of a material having a lower thermal conductivity and excellent electrical conductivity than the first metal member 16. When the first metal member 16 is made of silver, the second metal member 17 may be made of copper, which has a lower thermal conductivity than silver.
Examples of metals having a higher specific gravity than copper and silver include tungsten, tantalum, gold, and lead-platinum. Examples of metals having a lower specific gravity than copper and silver include aluminum, magnesium, nickel, chromium, titanium, iron, and tin. The metals constituting the first metal member 16 and the second metal member 17 may be alloys or may contain additives other than metals. The greater the difference in specific gravity between the first metal member 16 and the second metal member 17, the greater the design freedom of the electrode terminal 15. For this reason, in consideration of the specific gravity, electrical conductivity, and thermal conductivity, it is preferable to use copper or an alloy containing copper as the first metal member 16. It is preferable to use tungsten or an alloy containing tungsten as the second metal member 17 in the case of a metal having a higher specific gravity, and aluminum or an alloy containing aluminum as the case of a metal having a lower specific gravity.
Furthermore, the electrode terminal 15 may be a combination of three or more kinds of metals, alloys, etc. In this case, it is also preferable to use a metal material with the highest thermal conductivity for all of the surfaces in contact with the second solder layer 14.

(Center of gravity position)
In the first semiconductor device 10, the center of gravity 15g required for the electrode terminal 15 varies depending on the size (area) of the first semiconductor element 13, the positions of the electrode pads provided on the first semiconductor element 13, and the size of the electrode terminal 15. Furthermore, in the electrode terminal 15, the amount of deviation of the center of gravity 15g from the center position 15c varies depending on the difference in specific gravity between the first metal member 16 and the second metal member 17 to be applied, the volume ratio of the second metal member 17 in the electrode terminal 15, the position of the second metal member 17, and the like. For this reason, in the first semiconductor device 10, it is necessary to arbitrarily design the materials of the first metal member 16 and the second metal member 17, the arrangement of the second metal member 17, and the like, depending on the center of gravity 15g required for the electrode terminal 15.

6 and 7 show examples of center of gravity positions 15g that are set by combining the first metal member 16 and the second metal members 17H and 17L in the electrode terminal 15. FIG.
6 and 7, the stacking direction of the first semiconductor device 10 is shown as the z direction. The extension direction of the first metal member 16 and the second metal member 17 of the electrode terminal 15 perpendicular to the z direction is shown as the y direction. The joining direction between the first metal member 16 and the second metal member 17 perpendicular to both the z direction and the y direction is shown as the x direction. The electrode terminal 15 shown in FIGS. 6 and 7 shows regions obtained by dividing the x direction, y direction, and z direction into four.
In addition, in Figures 6 and 7, the center of gravity positions 12g, 13g of the first solder layer 12 and the first semiconductor element 13 of the first semiconductor device 10 are located in the negative x-direction from the center position 15c of the electrode terminal 15.

Figure 6 shows an example of the arrangement of the center of gravity 15g when using a first metal member 16 and a second metal member 17H having a larger specific gravity than the first metal member 16. As shown in Figure 6, the center of gravity 15g required for the electrode terminal 15 can be adjusted by changing the arrangement of the second metal member 17H. Specifically, the second metal member 17H having a larger specific gravity is arranged closer to the center of gravity positions 12g, 13g of the first solder layer 12 and the first semiconductor element 13 of the first semiconductor device 10 than the first metal member 16 in the upper layer 15u.

FIG. 6 shows an example in which copper (Cu) is used as the first metal member 16 and tungsten (W) is used as the second metal member 17H having a larger specific gravity than the first metal member 16. In FIG.
6, the second metal member 17H is disposed in 1/2 of the area in the x direction, the entire area (1/1) in the y direction, and 3/4 of the area in the z direction. As a result, the center of gravity 15g of the electrode terminal 15 is disposed at the coordinates (x, y, z) = (5/12, 1/2, 7/12).
In the example of the center of gravity position (2), the second metal member 17H is disposed in 1/2 of the area in the x direction, the entire area (1/1) in the y direction, and 1/2 of the area in the z direction. As a result, the center of gravity position 15g of the electrode terminal 15 is disposed at the coordinates (x, y, z) = (5/12, 1/2, 8/12).
In the example of the center of gravity position (3), the second metal member 17H is disposed in 1/3 of the area in the x direction, the entire area (1/1) in the y direction, and 3/4 of the area in the z direction. As a result, the center of gravity position 15g of the electrode terminal 15 is disposed at the coordinates (x, y, z) = (4/12, 1/2, 7/12).

As described above, in the electrode terminal 15, by adjusting the arrangement of the second metal member 17H, the center of gravity position 15g can be adjusted in the x, y, and z directions. Therefore, the center of gravity position 15g of the electrode terminal 15 required in the first semiconductor device 10 can be adjusted by adjusting the arrangement, volume, etc. of the second metal member 17H. In this way, by using an electrode terminal 15 in which the first metal member 16 and the second metal member 17H, which has a larger specific gravity than the first metal member 16, are integrated, the inclination of the stacked structure of the first semiconductor device 10 caused by the center of gravity position 15g of the electrode terminal 15 can be suppressed.

7, even when a second metal member 17L having a smaller specific gravity than the first metal member 16 is used, the center of gravity position 15g required for the electrode terminal 15 can be adjusted by changing the arrangement of the second metal member 17. Specifically, the second metal member 17L having a smaller specific gravity is arranged on the opposite side of the first metal member 16 to the center of gravity positions 12g, 13g of the first solder layer 12 and the first semiconductor element 13 of the first semiconductor device 10 in the upper layer 15u.

FIG. 7 shows an example in which copper (Cu) is used as the first metal member 16 and aluminum (Al) is used as the second metal member 17L having a smaller specific gravity than the first metal member 16. In FIG.
7, the second metal member 17L is disposed in 1/2 of the area in the x direction, the entire area (1/1) in the y direction, and 3/4 of the area in the z direction. As a result, the center of gravity 15g of the electrode terminal 15 is disposed at the coordinates (x, y, z) = (5/12, 1/2, 5/12).
In the example of the center of gravity position (2), the second metal member 17L is disposed in 1/2 of the area in the x direction, the entire area (1/1) in the y direction, and 1/2 of the area in the z direction. As a result, the center of gravity position 15g of the electrode terminal 15 is disposed at the position of coordinates (x, y, z) = (5/12, 1/2, 4/12).
In the example of the center of gravity position (3), the second metal member 17L is disposed in 1/3 of the area in the x direction, the entire area (1/1) in the y direction, and 3/4 of the area in the z direction. As a result, the center of gravity position 15g of the electrode terminal 15 is disposed at the position of coordinates (x, y, z) = (4/12, 1/2, 5/12).

As described above, in the electrode terminal 15, by adjusting the arrangement of the second metal member 17L, the center of gravity position 15g can be adjusted in the x, y, and z directions. Therefore, the center of gravity position 15g of the electrode terminal 15 required in the first semiconductor device 10 can be adjusted by adjusting the arrangement, volume, etc. of the second metal member 17L. In this way, by using an electrode terminal 15 in which the first metal member 16 and the second metal member 17L, which has a smaller specific gravity than the first metal member 16, are integrated, the inclination of the stacked structure of the first semiconductor device 10 caused by the center of gravity position 15g of the electrode terminal 15 can be suppressed.

The lengths of the second metal member 17 in the x, y, and z directions are not particularly limited, and are designed arbitrarily according to the center of gravity position 15g required for the electrode terminal 15. The shape of the second metal member 17 and the shape of the joint surface between the first metal member 16 and the second metal member 17 are also not particularly limited, and may be a shape other than a rectangular parallelepiped or a joint surface other than a rectangle. By changing the shape of the second metal member 17, it is possible to adjust the center of gravity position 15g more precisely.

The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the above-described embodiments have been described in detail to clearly explain the present invention, and the present invention is not necessarily limited to an embodiment having all of the configurations described. It is also possible to replace part of the configuration of one embodiment with the configuration of another embodiment. It is also possible to add the configuration of another embodiment to the configuration of one embodiment. It is also possible to delete part of the configuration of each embodiment, or to add or replace other configurations.

1 semiconductor module, 1 semiconductor device, 2 wiring, 3 sealing resin, 5, 6, 7 straight line, 10 first semiconductor device, 11 first substrate, 12 first solder layer, 12g, 13g, 15g center of gravity, 13 first semiconductor element, 14 second solder layer, 15 electrode terminal, 15c center position, 15d lower layer, 15u upper layer, 16 first metal member, 17, 17H, 17L second metal member, 20 second semiconductor device, 21 second substrate, 22 third solder layer, 23 second semiconductor element, 24 capacitor

Claims (10)

A substrate;
a first conductive bonding member provided on the substrate;
a semiconductor element provided on the first conductive bonding member;
a second conductive bonding member provided on the semiconductor element;
an electrode terminal provided on the second conductive bonding member;
the electrode terminal has a configuration in which a first metal member and a second metal member, which is disposed adjacent to the first metal member and has a thermal conductivity lower than that of the first metal member, are integrated together;
the entire surface of the electrode terminal that comes into contact with the first conductive bonding member is made of the first metal member. The electrode terminal is
a lower layer portion formed only of the first metal member;
an upper layer portion provided on the lower layer portion, in which the first metal member and the second metal member are joined and integrated;
The semiconductor device according to claim 1 , wherein the lower layer and the upper layer are joined together to be integrated. The semiconductor device according to claim 2 , wherein in the upper layer portion, the second metal member is disposed closer to a center of gravity of the first conductive bonding member than the first metal member is when viewed in a projected manner in the stacking direction. The semiconductor device according to claim 3 , wherein the second metal member has a specific gravity higher than that of the first metal member. The semiconductor device according to claim 4 , wherein the first metal member includes copper and the second metal member includes tungsten. The semiconductor device according to claim 2 , wherein in the upper layer portion, the second metal member is disposed on an opposite side to a center of gravity of the first conductive bonding member in a projected view in the stacking direction with respect to the first metal member. The semiconductor device according to claim 6 , wherein the second metal member has a specific gravity lower than that of the first metal member. The semiconductor device according to claim 7 , wherein the first metal member includes copper, and the second metal member includes aluminum. A semiconductor device comprising: a first semiconductor device according to claim 1; and a second semiconductor device electrically connected to the first semiconductor device by wiring;
The second semiconductor device includes:
A second substrate;
a conductive bonding member provided on the second substrate;
a second semiconductor element provided on the conductive bonding member. a sealing resin that seals the first semiconductor device and the second semiconductor device;
The semiconductor module according to claim 9 , wherein upper portions of the first metal member and the second metal member constituting the electrode terminals are exposed from the sealing resin.

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