JP2547823B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a semiconductor device, and more particularly to a technique effectively applied to a semiconductor device in which an insulating resin film layer is bonded to an inner lead.

[Conventional technology]

The present inventor is developing a resin-encapsulated (resin-encapsulated) semiconductor device for encapsulating a semiconductor pellet with a resin. The semiconductor pellet is a DRAM of a large capacity of 1 [Mbit] or 4 [Mbit] (D ynamic R andom A ccess M emory).
Resin-sealed semiconductor device DIP (D ual I n-line P acka
ge), is composed of a pin insertion type, such as ZIP (Z igzag I n-line P ackage). In addition, the resin-sealed semiconductor device
It is constituted by surface mounting, such as SOJ (S mall O ut-line package with J bend).

In this type of resin-encapsulated semiconductor device, an external terminal (bonding pad) of the semiconductor pellet mounted on the surface of the tab and an inner lead are connected by a bonding wire. These semiconductor pellets, inner leads, etc. are resin encapsulants (for example, phenol-curable epoxy resin).
It is sealed with.

The resin-encapsulated semiconductor device under development by the present inventor is formed under a unified standard, for example, with a lead row pitch of 300 to 400 [mil]. On the other hand, the semiconductor pellet occupies most of the area of the resin encapsulant due to the increase in size of the semiconductor pellet due to the increase in capacity of DRAM.
Due to the increase in size of the semiconductor pellet, it becomes impossible to hold the leads with the resin encapsulant and route the inner leads.

As a technique for solving such a problem, it is advantageous to adopt a so-called tabless structure described in, for example, Japanese Patent Laid-Open No. 61-218139. In a resin-sealed semiconductor device having a tabless structure, an inner lead is routed to a mounting position of the semiconductor pellet, and the inner lead supports the semiconductor pellet. That is, the resin-sealed semiconductor device having the tabless structure has no tab. An insulating resin film layer is interposed between the semiconductor pellet and the inner lead,
The two are electrically separated.

Polyimide resin is often used for the insulating resin film layer. Since the insulating resin film layer cannot be directly adhered to the surface of the inner lead or the semiconductor pellet,
It adheres to them through an adhesive layer. The adhesive layer uses a thermosetting resin such as epoxy resin or acrylic resin,
The insulating resin film layer is bonded by thermocompression and further post-baked if necessary.

[Problems to be Solved by the Invention]

The present inventor has confirmed the fact that current leakage frequently occurs between inner leads as a result of a moisture resistance characteristic test that accompanies the development of the above-described resinless semiconductor device having a tabless structure. The present inventors have found that the adhesiveness between the adhesive layer (thermosetting resin) on the surface of the insulating resin film layer and the resin sealing material (phenolic curing type epoxy resin) is poor, and peeling occurs at the adhesive interface between them. Therefore, it is considered that water is condensed on the peeled adhesive interface, and the condensed water causes a current leak. In addition, the present inventor has found that the adhesiveness between the insulating resin film layer and the adhesive layer is poor, so that the above-mentioned current of I think there will be a leak.

An object of the present invention is to provide a technique capable of reducing current leakage between inner leads and improving electrical reliability in a resinless semiconductor device having a tabless structure.

Another object of the present invention is to provide a technique capable of improving the adhesive strength between the insulating resin film layer and the adhesive layer in the resin-sealed semiconductor device having the tabless structure and achieving the above object. It is in.

Another object of the present invention is to provide a technique capable of improving workability in the manufacturing process of the resin-sealed semiconductor device having the tabless structure.

Another object of the present invention is to manufacture a resin-less semiconductor device having the tabless structure, which prevents deterioration of adhesiveness of the adhesive layer due to air entrainment during the step of thermocompression bonding the insulating resin film layer, It is to provide a technology capable of improving the yield above.

Another object of the present invention is to reduce the adhesiveness of the adhesive layer due to foaming of the solvent remaining in the adhesive layer during the step of thermocompression bonding the insulating resin film layer in the resin-sealed semiconductor device having the tabless structure. It is an object of the present invention to provide a technology capable of preventing and improving the manufacturing yield.

Another object of the present invention is to provide a technique capable of improving the manufacturing yield and further improving the adhesive strength of the adhesive layer in the resinless semiconductor device having the tabless structure. .

Another object of the present invention is to provide a technique capable of achieving the above object in a resin-sealed semiconductor device having a structure other than a tabless structure, in which an insulating resin film layer is bonded to an inner lead.

The above and other objects and novel features of the present invention are as follows.
It will be apparent from the description of this specification and the accompanying drawings.

[Means for solving the problem]

The outline of a typical invention disclosed in the present application is briefly described as follows.

(1) In a semiconductor device in which a portion of the inner lead to which the insulating resin film layer is bonded is sealed with at least a resin sealing material, a glass transition temperature between the insulating resin film layer and the inner lead is 170 to 260. A polyether amide or polyether amide imide layer having a temperature range of [° C.] is provided.

(2) The surface of the insulating resin film layer of the semiconductor device, which is attached to the inner leads, is roughened by a blast method.

(3) In the method for manufacturing a semiconductor device, a glass transition temperature of about 200 to 260 [° C.] is obtained by leaving a small amount of a solvent as an adhesive layer on the surface of the insulating resin film layer on the side to be bonded to the inner leads. Forming a polyether amide or polyether amide imide layer in the range, and a step of bonding the insulating resin film layer by thermocompression bonding with the polyether amide or polyether amide imide layer interposed in the inner lead Prepare

(4) In the method for manufacturing a semiconductor device, a polyether amide or a poly-ether having a glass transition temperature in the range of about 170 to 260 [° C.] is used as an adhesive layer on the surface of the insulating resin film layer on the side to be adhered to the inner leads. A step of forming an ether amide imide layer; a step of temporarily attaching the insulating resin film layer by thermocompression bonding with the polyether amide or polyether amide imide layer interposed in the inner lead; And the step of permanently attaching the insulating resin film layer temporarily attached to the.

(5) In the method for manufacturing a semiconductor device, a glass transition temperature of about 200 to 260 [° C.] is obtained by leaving a small amount of a solvent as an adhesive layer on the surface of the insulating resin film layer on the side to be adhered to the inner leads. Forming a polyether amide or polyether amide imide layer within the range, and temporarily fixing the insulating resin film layer by thermocompression bonding with the polyether amide or polyether amide imide layer interposed in the inner lead And a step of reducing the residual amount of the solvent of the polyetheramide or polyetheramideimide layer by baking, and a step of permanently attaching the insulating resin film layer temporarily attached to the inner lead by thermocompression bonding. Prepare

[Action]

According to the above-mentioned means (1), the inner lead,
Since the adhesive strength between each of the resin encapsulants and the polyetheramide or polyetheramideimide layer can be improved, and peeling of the adhesive interface between the two and condensation of water on the peeled portion can be prevented (improved moisture resistance) ), Current leakage between the inner leads can be prevented, and the electrical reliability of the semiconductor device can be improved.

According to the above-mentioned means (2), in addition to the effect of the above-mentioned means (1), the surface of the insulating resin film layer can be invaded with the polyetheramide or the polyetheramideimide layer, so that the adhesion of the both Of the semiconductor device, and the electrical reliability of the semiconductor device can be improved.

According to the above means (3), the high temperature softening fluidity of the polyether amide or polyether amide imide layer is improved, and the thermocompression bonding temperature for adhering the insulating resin film layer to the inner lead is about 20 to 50 [° C.]. ] Since it can be reduced, workability in the manufacturing process of a semiconductor device can be improved. Moreover, since thermocompression bonding can be performed at a low temperature, the manufacturing process time of the semiconductor device can be shortened.

According to the above-mentioned means (4), the insulating resin film layer is bonded to the inner lead by thermocompression a plurality of times, and at the time of thermocompression bonding at the bonding interface between the inner lead and the polyetheramide or polyetheramideimide layer. Since it is possible to reduce the entrainment of air that occurs, it is possible to increase the adhesive strength between the inner lead and the insulating resin film layer and improve the manufacturing yield of the semiconductor device.

According to the above-mentioned means (5), the high temperature softening fluidity of the polyetheramide or polyetheramideimide layer is improved, and the insulating resin film layer is temporarily provided on the inner lead by thermocompression bonding with high workability and low temperature. In addition to being able to attach the insulating resin film layer to the inner lead, the baking is performed to dehumidify the insulating resin film layer and vaporize excess solvent in the polyetheramide or polyetheramideimide layer. Since the foaming that occurs can be reduced, the adhesive strength can be increased and the manufacturing yield of semiconductor devices can be improved. Further, the solvent vaporized from the polyether amide or polyether amide imide layer by the baking is adsorbed on the adhered surface of the inner lead to improve the wettability between the inner lead and the polyether amide or the polyether amide imide layer. Therefore, the adhesive strength can be further increased.

Hereinafter, the configuration of the present invention will be described together with an embodiment in which the present invention is applied to a resin-sealed semiconductor device having a tabless structure.

In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and their repeated description will be omitted.

Example of Invention

A basic structure of a resinless semiconductor device having a tabless structure, which is an embodiment of the present invention, is shown in FIGS.
This is shown in the figure (plan view). 1 is a sectional view of FIG. 2 taken along the line I-I.

The resinless semiconductor device 1 having the tabless structure shown in FIGS. 1 and 2 is a pin insertion type formed by a DIP type. The resin-encapsulated semiconductor device 1 mounts the semiconductor pellet 4 with an adhesive layer 3A, an insulating resin film layer 3B, and a die bond material layer 3C, which are sequentially stacked on the surface of the inner lead 2A, interposed therebetween. The semiconductor pellet 4 and the inner lead 2A are each sealed with a resin sealing material 6.

A plurality of the inner leads 2A cross below the mounting position of the semiconductor pellet 4 and extend to the vicinity of the external terminal (bonding pad P) 4A of the semiconductor pellet 4. As shown in FIG. 2, the planar shape of the resin encapsulant 6 and the planar shape of the semiconductor pellet 4 are rectangular. The outer leads 28 are arranged along the long sides of the resin sealing material 6 having a rectangular shape, and the external terminals 4A of the semiconductor pellet 4 are arranged along the short sides of the rectangular shape. Therefore, the one end side of the inner lead 2A has an L-shaped planar shape. The other end side of the inner lead 2A is integrally configured (electrically connected) with the outer lead 2B.

The inner leads 2A and the outer leads 2B are formed of an iron-nickel alloy material (for example, the nickel content is 50 [%]). Inner lead 2A and outer lead 2B
Is formed in the range of 0.15 to 0.30 [mm], for example. In the present embodiment in which the resin-encapsulated semiconductor device 1 is formed by the DIP type (also the ZIP type), the inner leads 2A and the outer leads 2B are formed with a thickness of 0.25 [mm]. In the SOJ type surface mount type resin-sealed semiconductor device 1 described later, the inner leads 2A and the like are formed with a thickness of about 0.20 [mm] in order to improve the bending workability of the outer leads 2B. . The inner leads 2A and the outer leads 2B may be made of a copper (Cu) -based material.

The semiconductor pellet 4 is formed of a single crystal silicon substrate. A plurality of semiconductor elements are integrated on the surface of the semiconductor pellet 4 (the surface opposite to the surface facing the inner leads 2A). The semiconductor pellet 4 of this embodiment has a built-in DRAM. As described above, the semiconductor pellet 4 has an insulating resin film layer on the surface of the inner lead 2A that crosses the lower surface thereof.
It is mounted with 3B intervening. That is, this type of resin-encapsulated semiconductor device 1 has a so-called tabless structure in which a tab for mounting the semiconductor pellet 4 does not exist.

The external terminals 4A arranged along the rectangular short sides of the semiconductor pellet 4 are electrically connected to the inner leads 2A via the bonding wires 5. External terminal 4A
1 is simply shown in FIGS. 1 and 2, but is actually formed on the surface of the interlayer insulating film covering the semiconductor element, and the surface is exposed through the opening formed in the final passivation film. . The external terminal 4A is formed in the same manufacturing process as the wiring connecting the semiconductor elements. The external terminal 4A is formed of, for example, an aluminum alloy to which Cu and Si are added.

The bonding wire 5 is an Au wire. The bonding wire 5 is bonded by, for example, a ball bonding method. The ball bonding method is
Form a metal ball on one end side of the bonding wire 5,
This metal ball is bonded to the external terminal 4A by using thermocompression and ultrasonic vibration together. Similarly, the other end of the bonding wire 5 is bonded to the surface of the inner lead 2A by using thermocompression and ultrasonic vibration. Also, as the bonding wire 5,
Cu wire or aluminum wire may be used.

The resin encapsulant 6 is formed of, for example, a silicone resin for reducing stress and a phenol curable epoxy resin to which a filler is added. The silicone rubber is added in a slight amount, and has the effect of lowering the elastic modulus of the phenol-curing epoxy resin. The filler is formed of spherical silicon oxide particles and has a function of lowering the coefficient of thermal expansion.
The filler is added to the phenol-curing type epoxy type resin in the range of, for example, 70 to 75% by weight.

The insulating resin film layer 3B provided between the inner lead 2A and the semiconductor pellet 4 is formed of a polyimide resin layer which is a thermosetting resin. The polyimide resin layer, which is the insulating resin film layer 3B, is formed in the resin-encapsulated semiconductor device 1 of this embodiment with a thickness in the range of about 25 to 300 [μm]. Insulating resin film layer 3B is used for securing mechanical strength, inner lead 2 and semiconductor pellet 4.
In order to secure the withstand voltage between and and to reduce the electric capacitance acting between the two, it is formed with a thickness of 25 [μm] or more. In addition, the insulating resin film layer 3B may be basically thick, but since the height difference between the position of the inner lead 2A and the position of the external terminal 4A of the semiconductor pellet 4 becomes large and bonding becomes difficult, It is formed with a thickness of 300 [μm] or less. In the resin-sealed semiconductor device 1 of this embodiment, the insulating resin film layer 3B has a thickness of about 125 [μ
m].

The polyimide resin layer which is the insulating resin film layer 3 has a linear thermal expansion coefficient (α) in the range of about 5 × 10 ⁻⁶ to 30 × 10 ⁻⁶ [° C. ⁻¹ ]. In the case of the present embodiment in which the inner lead 2A and the outer lead 2B are made of iron-nickel alloy material, the coefficient of linear thermal expansion of the iron-nickel alloy material is about 5.
The insulating resin film layer 3B is a polyimide resin layer having a linear thermal expansion coefficient in the low range of about 12 × 10 ⁻⁶ [° C. ⁻¹ ] because it is × 10 ⁻⁶ to 10 × 10 ⁻⁶ [° C. ⁻¹ ]. Is preferably used. That is, the insulating resin film layer 3B is formed of a polyimide resin layer having a low thermal expansion relatively close to the linear thermal expansion coefficient of the inner lead 2A and the outer lead 2B, especially the inner lead 2A.
Is configured to reduce the warp of the. Similarly, when the inner lead 2A and the outer lead 2B are made of a copper-based material, the coefficient of linear thermal expansion of the copper-based material is about 17 × 10
^{Since it is -6} [℃ ^-1 ], the insulating resin film layer 3B has about 20
It is preferable to use a polyimide resin layer having a linear thermal expansion coefficient in a high range of about 10 ⁻⁶ [° C. ⁻¹ ].

Die bond material layer 3C provided between the insulating resin film layer 3B and the back surface (or mounting surface) of the semiconductor pellet 4
Is formed of a polyimide resin paste layer which is a thermosetting resin. In the polyimide resin paste layer that is the die bond material layer 3C, a filler (silicon oxide particles) and a solvent were added to the polyimide resin. It is a coating type insulating adhesive. The polyimide-based resin paste layer is formed on the surface of the insulating resin film layer 3B in the resin-encapsulated semiconductor device 1 of this embodiment with a thickness in the range of about 10 to 25 [μm]. That is, the polyimide resin paste layer adheres the semiconductor pellets 4 to the surface of the insulating resin film layer 3B with sufficient adhesive strength, and the linear thermal expansion coefficient of itself does not affect the insulating resin film layer 3B. , Is formed in the above range of thickness.

The polyimide-based resin paste layer, which is the die-bonding material layer 3C, is made of the insulating resin film layer 3B after the insulating resin film layer 3B is bonded to the inner lead 2A with the adhesive layer 3A interposed therebetween and before the semiconductor pellet 4 is mounted. Applied to the surface.
Therefore, when the die-bonding material layer 3C is formed by the coating operation, the insulating resin film layer 3B is not necessary for the film sticking device or the bonding device when the insulating resin film layer 3B is bonded to the surface of the inner lead 2A. Since it is not adhered to, the workability in manufacturing can be improved.
As the die bond material layer 3C, a coating type epoxy resin paste layer (thermosetting resin) may be used in addition to the above-mentioned polyimide resin paste layer.

The adhesive layer 3A provided between the insulating resin film layer 3B and the inner lead 2A is formed of a polyether amide or polyether amide imide layer which is a thermoplastic resin. The polyether amide or polyether amide imide layer is used in the resin-sealed semiconductor device 1 of this embodiment.
It is adhered to the surface of the insulating resin film layer 3B on the inner lead 2A side with a thickness in the range of about 10 to 50 [μm]. The polyether amide or polyether amide imide layer is
The insulating resin film layer 3B is formed with a thickness of 10 [μm] or more so as to secure the adhesiveness between the insulating resin film layer 3B and the inner leads 2A and to be able to uniformly coat the surface of the insulating resin film layer 3B. Further, the polyether amide or polyether amide imide layer has a thickness of 50 [μm] or less so that the linear thermal expansion coefficient of the polyether amide or the polyether amide imide layer itself does not affect the insulating resin film layer 3B and the coating work is not difficult. Is formed by. Adhesive layer 3A of the resin-encapsulated semiconductor device 1 of this embodiment
The polyether amide or polyether amide imide layer is formed with a film thickness of 20 [μm].

The adhesive layer 3A is a polyetheramide or polyetheramideimide layer having a glass transition temperature (low Tg) in the low range of 170 to 220 [° C] or a glass transition temperature (high Tg) in the high range of 200 to 260 [° C]. The polyether amide or polyether amide imide layer according to 1) is used. The former polyether amide or polyether amide imide layer has a softening temperature of about 23.
Melt viscosity at 0 [℃] or higher and 270 [℃] is 10 ⁵ to 10 ⁶ [P]
Is. The latter polyether amide or polyether amide imide layer has a softening temperature of about 250 [℃] or more and 320 [℃].
The melt viscosity at that time is 10 ⁵ to 10 ⁶ [P]. That is, the resin-encapsulated semiconductor device 1 of this example uses a polyetheramide or polyetheramideimide layer having a glass transition temperature in the range of 170 to 260 [° C].

High glass transition temperature (high range of 200 to 260 [℃])
The polyetheramide or polyetheramideimide layer of Tg) is a polymer having a repeating unit represented by the following general formula <I>.

In the general formula <I>, R ₁ , R ₂ , R ₃ and R ₄ each independently represent hydrogen, a lower alkyl group, a lower alkoxy group or a halogen group. X is a mere bond (-), -O-, -S
-, −SO ₂ −, Is one of. Here, each of R ₅ and R ₆ independently represents hydrogen, a lower alkyl group, a trifluoromethyl group, a trichloromethyl group or a phenyl group. Y is Is. Here, Ar is a divalent aromatic group. Ar 'is an aromatic trivalent group.

A preferred polymer has the above general formula <I> Is represented by either of the above.

The polyether amide or polyether amide imide layer having a glass transition temperature in the high range is an aromatic dicarboxylic acid or a reactive derivative thereof and / or an aromatic tricarboxylic acid or a reactive derivative thereof and the following general formula <II>. It can be formed by polycondensing the represented aromatic diamine. Here, in the following general formula <II>, R ₁ , R ₂ ,
R ₃ , R ₄ and X have the same meaning as in formula (I).

The aromatic dicarboxylic acid has two carboxyl groups bonded to the aromatic nucleus. The aromatic ring may have a hetero ring introduced therein, or the aromatic rings may be bonded to alkylene, oxygen, a carbonyl group or the like. Further, the aromatic ring may be introduced with a substituent such as alkoxy, allyloxy, alkylamino, or halogen which does not participate in the condensation reaction.

As the aromatic dicarboxylic acid, terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid-4,
4 ', diphenyl sulfone dicarboxylic acid-4,4', diphenyl dicarboxylic acid-4,4 'and naphthalene dicarboxylic acid-1,5. Of these, terephthalic acid and isophthalic acid are generally easily available.

Examples of the reactive derivative of the aromatic dicarboxylic acid include dichloride, dibromide and diester of the aromatic dicarboxylic acid.

The aromatic tricarboxylic acid has three carboxyl groups bonded to the aromatic nucleus, and two of the three carboxyl groups are bonded to adjacent carbons. This aromatic ring may have a hetero ring introduced therein, or the aromatic rings may be bonded to alkylene, oxygen, carbonyl group or the like. further,
The aromatic ring may be introduced with a substituent such as alkoxy, allyloxy, alkylamino, or halogen which does not participate in the condensation reaction.

As the aromatic tricarboxylic acid, for example, trimellitic acid, 3,3,4'-benzophenone tricarboxylic acid, 2,
3,4'-diphenyltricarboxylic acid, 2,3,6-pyridinetricarboxylic acid, 3,4,4'-benzanilide tricarboxylic acid, 1,4,5-naphthalenetricarboxylic acid, 2'-methoxy-3,4, 4'-diphenyl ether tricarboxylic acid,
2'-chlorobenzanilide-3,4,4'-tricarboxylic acid and the like.

Examples of the reactive derivative of the aromatic tricarboxylic acid include acid anhydride, halide, ester, amide and ammonium salt of the aromatic tricarboxylic acid. Examples of these are trimellitic anhydride, trimellitic anhydride monochloride, 1,4-dicarboxy-3-N, N-dimethylcarbamoylbenzene, 1,4-dicarbomethoxy-
3-carboxybenzene, 1,4-dicarboxy-3-carbophenoxybenzene, 2,6-dicarboxy-3-carbomethoxypyridine, 1,6-dicarboxy-5-carbamoylnaphthalene, the above aromatic tricarboxylic acids and ammonia Ammonium salts such as dimethylamine and tritylamine. Of these, trimellitic anhydride and trimellitic anhydride monochloride are preferable.

The aromatic diamine represented by the general formula <II> is 2,2
-Bis [4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3-methyl-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [4- (4-
Aminophenoxy) phenyl] butane, 2,2-bis [3
-Methyl-4- (4-aminophenoxy) phenyl] butane, 2,2-bis [3,5-dimethyl-4- (4-aminophenoxy) phenyl] butane, 2,2-bis [3,5-dibromo -4- (4-aminophenoxy) phenyl] butane,
1,1,1,3,3,3-hexafluoro-2,2-bis [3-methyl-4- (4-aminophenoxy) phenyl] propane,
1,1-bis [4- (4-aminophenoxy) phenyl]
Cyclohexane, 1,1-bis [4- (4-aminophenoxy) phenyl] cyclopentane, bis [4- (4-aminophenoxy) phenylsulfone], bis [4- (4
-Aminophenoxy) phenyl ether], bis [4-
(3-Aminophenoxy) phenyl sulfone], 4,4 ′
-Carbonylbis (P-phenyleneoxy) diamine,
4,4'-bis (4-aminophenoxy) biphenyl and the like. Of these, 2,2-bis [4- (4-aminophenoxy) phenyl] propane is preferable. Moreover, the said diamine mixture can be used as needed.

The aromatic diamine is a known diamine, for example, 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenyl sulfone, metaphenylenediamine, piperazine, hexamethylenediamine, heptamethylene. Diamine, tetramethylenediamine, P-xylylenediamine, m-xylylenediamine, 3-methylheptamethylenediamine, 1,
3-bis (3-aminopropyl) tetramethyldisiloxane and the like can be used in combination. The ratio of these diamines to the total diamines is preferably 30 [mol%] or less. If the ratio exceeds 30 [mol%], the thermal stability and heat melting property tend to deteriorate.

The acid component such as the aromatic dicarboxylic acid, the reactive derivative of the aromatic dicarboxylic acid, the aromatic tricarboxylic acid, or the reactive derivative of the aromatic tricarboxylic acid has a range of 80 to 120 [mol%] with respect to the total amount of the diamine. Used, especially 95-105 [mol
%] Is preferable. When these are used in equimolar amounts, the highest molecular weight one can be obtained. If the amount of the above-mentioned acid component relative to the diamine is too large or too small, the molecular weight tends to decrease, and the mechanical strength, heat resistance, etc. tend to deteriorate. A known method can be applied as it is to the reaction between the amine and the acid, and the conditions for the reaction are not particularly limited.

A known method is used for the polycondensation reaction between the aromatic dicarboxylic acid or the reactive derivative of the aromatic dicarboxylic acid and the diamine. A known method is similarly used for the polycondensation reaction of an aromatic tricarboxylic acid or a reactive derivative of an aromatic tricarboxylic acid and a diamine.

The above polymer has a reduced viscosity of 0.2 to 2.0 at 30 [° C] in a solution of dimethylformamide 0.2 [wt%].
It is preferably [dl / g]. If this reduced viscosity is too small, the mechanical strength and heat resistance will deteriorate, and if it is too large, the heat meltability will tend to deteriorate.

Next, several methods for forming the above-mentioned polymer will be described.

(Forming method 1) 4 equipped with a thermometer, a stirrer, a nitrogen introducing pipe, and a fractionating head
In a two-necked flask, under nitrogen, 205 [g] of 2,2-bis [4- (4-aminophenoxy) phenyl] propane (0.5 [mo
l]) and dissolve in 705 [g] N-methyl-2-pyrrolidone.

Next, this solution is cooled to a temperature of -10 [° C], and at this temperature trimellitic anhydride monochloride 105.3 [g]
(0.5 [mol]) is added so that the temperature does not exceed -5 [° C].

Next, after the trimellitic anhydride monochloride was dissolved, triethylamine 76 [g] was added so that the temperature did not exceed 5 [° C], and N-methyl-2-pyrrolidone 503 [g] was added to this. To do.

Next, after stirring at room temperature for about 1 hour, at a temperature of 190 [° C],
The reaction is carried out for a time to complete the imidization.

Next, the reaction solution is poured into methanol to isolate the polymer. After this is dried, it is again dissolved in N, N-dimethylformamide, poured into methanol to purify the polyetheramideimide polymer, and dried under reduced pressure.

The reduced viscosity [η _SP / C] of the polyether amide imide polymer thus obtained was measured at 30 [° C] in a solution of N, N, -dimethylformamide 0.2 [wt%] (hereinafter The same applies to the forming method described in (1), 0.89 [dl
/ g].

(Forming method 2) 4 equipped with a thermometer, a stirrer, a nitrogen introducing pipe, and a cooling pipe
In a two-necked flask, under nitrogen, 2,2-bis [4- (4-aminophenoxy) phenyl] propane 147.6 [g] (0.36
[Mol]), 1,3-bis (aminopropyl) tetramethyldisiloxane 9.92 [g] (0.04 [mol]) and propylene oxide 34.8 [g] (0.6 [mol]) were added, and N, N,-
It dissolves in dimethylacetamide 564 [g].

Next, this solution was cooled to a temperature of 0 [° C], and at this temperature, trimellitic anhydride monochloride 84.2 [g] (0.
4 [mol]) is added so that the temperature does not exceed 5 [° C].

Next, after stirring at room temperature for about 3 hours, 200 [g] of acetic anhydride and 50 [g] of pyridine are added, and stirring is continued at a temperature of 60 [° C] for one day.

Next, this reaction liquid is isolated and purified in the same manner as in the above-mentioned forming method 1 to obtain a polyether amide imide polymer.

The reduced viscosity [η _SP / C] of the polyether amide imide polymer thus obtained was 0.73 [dl / g].

(Forming method 3) 4 equipped with a thermometer, a stirrer, a nitrogen introducing pipe, and a cooling pipe
In a two-necked flask, under nitrogen, 205 [g] of 2,2-bis [4- (4-aminophenoxy) phenyl] propane (0.5 [mo
l]) and propylene oxide 69.6 [g] (1.2 [mo
l]), and N-methyl-2-pyrrolidone 1200 [g]
Dissolve in

Next, this solution was cooled to a temperature of -5 [° C], and 101.5 [g] of isophthalic acid dichloride (0.5 [molar] was added at this temperature.
l]) so that the temperature does not exceed 20 ° C.

Next, after stirring at room temperature for about 3 hours, the obtained reaction solution is isolated and purified in the same manner as in the above-mentioned forming method 1 to form a polyether amide imide polymer.

The reduced viscosity [η _SP / C] of the polyether amide imide polymer thus obtained was 1.0 [dl / g].

(Forming method 4) 4 equipped with a thermometer, a stirrer, a nitrogen introducing pipe, and a fractionating head
In a two-necked flask, under nitrogen, 2,2-bis [4- (4-aminophenoxy) phenyl] sulfone 216 [g] (0.5 [mo
l]) and dissolve in 705 [g] N-methyl-2-pyrrolidone.

Next, the same method as the above-mentioned forming method 1 is performed to form a polyether amide imide polymer. The reduced viscosity of the polyether amide imide polymer thus obtained [η
_SP / C] was 0.66 [dl / g]. After this, the above 170-220
The polyether amide or polyether amide imide layer having a glass transition temperature (low Tg) in the low [° C.] range will be described. The polyether amide or polyether amide imide layer is a polymer having a repeating unit represented by the following general formula <III>.

In the general formula <III>, m represents 0, 1, 2, 3 or 4. R ₁ represents a lower alkyl group, and R ₂ represents a lower alkyl group or a halogen group. X is a bond, Is. Here, each of R ₃ and R ₄ independently represents hydrogen, a lower alkyl group, a trifluoromethyl group or a phenyl group. R ₃ and R ₄ may be the same or different. Y is Is. Here, Ar is a divalent aromatic group. Ar 'is an aromatic trivalent group.

A preferred polymer has the above general formula <III>, Is represented by either of the above.

The polyetheramide or polyetheramideimide layer having a glass transition temperature in the low range is an aromatic dicarboxylic acid or a reactive derivative thereof and / or an aromatic tricarboxylic acid or a reactive derivative thereof and the following general formula <IV>. It can be formed by polycondensing the represented aromatic diamine. Here, in the following general formula <IV>, m, R ₁ ,
R ₂ and X have the same meaning as in the general formula <III>.

Examples of the aromatic diamine represented by the general formula <IV> include 1,3-bis (3-aminophenoxy) benzene, 1,3
-Bis (4-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 4,4 '-[1.3-phenylenebis (1-methylethylidene)] bisaniline, 4,4'-[1.4- Examples include phenylenebis (1-methylethylidene)] bisaniline and 3,3 '-[1.3-phenylenebis (1-methylethylidene)] bisaniline.

The polyether amide or polyether amide imide layer (adhesive layer 3A) having a glass transition temperature in the high range of 200 to 260 [° C.] is about 0.1 to 10 [% by weight] when adhered to the surface of the inner lead 2A. It is treated so that the solvent remains. In the resin-encapsulated semiconductor device 1 of this example, the treatment is performed so that about 1% by weight of the solvent remains in the polyetheramide or polyetheramideimide layer having a glass transition temperature in a high range. The solvent left in the polyether amide or polyether amide imide layer is N-methyl-2-pyrrolidone, butyl cellosolve acetate or the like. This solvent improves the high temperature softening fluidity of the polyether amide or polyether amide imide layer, and reduces the thermocompression bonding temperature for adhering the insulating resin film layer 3B to the inner lead 2A by about 20 to 50 [° C.]. be able to.

The polyether amide or polyether amide imide layer having a glass transition temperature in the low range of 170 to 220 [° C.] (adhesion layer 3A) has a low softening temperature itself as described above, and therefore, in this example, at the time of adhesion, The solvent is not left.

Thus, the resin-less type semiconductor device 1 having the tabless structure
In the above, the glass transition temperature is 170 to 260 as the adhesive layer 3A between the insulating resin film layer 3B and the inner lead 2A.
By providing a polyether amide or polyether amide imide layer in the range of [° C.] (bonding the insulating film having a two-layer structure formed of the insulating resin film 3B and the adhesive layer 3A to the surface of the inner lead 2A), The inner leads 2A and the resin sealing material 6 are respectively improved in adhesive strength with the polyether amide or polyether amide imide layer to prevent peeling of the adhesive interface between the two and condensation of water on the peeled portion. Can be prevented (improved moisture resistance),
It is possible to reduce current leakage between the inner leads 2A. As a result, the resinless semiconductor device 1 having the tabless structure can improve the electrical reliability. Further, by forming the adhesive layer 3A with a polyether amide or a polyether amide imide layer, it is possible to improve the adhesive strength between the adhesive layer 3A and the insulating resin film layer 3B and prevent peeling of the adhesive interface. Moreover, since the water that diffuses into the adhesive layer 3A can be reduced, it is possible to reduce the above-described current leak between the inner leads 2A.

According to the characteristic test conducted by the present inventor, the leakage current (A) generated in the resin-less type semiconductor device 1 having the tabless structure to which the present invention is applied is shown in FIG. 3 (a diagram showing the frequency of generation of leakage current). As shown in the figure, it was possible to obtain the result that the leakage current (B) of the conventional resin-encapsulated semiconductor device can be reduced by about three digits.

Further, at least the surface of the insulating resin film layer 3B of the resin-encapsulated semiconductor device 1 having the tabless structure on the side to be adhered to the inner leads 2A (the side to which the adhesive layer 3A is applied) is roughened by a blast method. Has been applied. This roughening treatment, for example, the depth of the surface of the insulating resin film layer 3B is about
It is performed so as to have an unevenness of 1.0 to 2.5 [μm]. The polyetheramide or polyetheramideimide layer, which is the adhesive layer 3A, is an insulating resin film layer that has been roughened.
It is applied along the uneven shape of the surface of 3B.

Thus, the resin-less type semiconductor device 1 having the tabless structure
The inner lead 2A of the insulating resin film layer 3B
By roughening the surface of the side by blasting method, it is possible to bite the polyetheramide or polyetheramideimide layer which is the adhesive layer 3A on the surface of the insulating resin film layer 3B, so that the insulating resin film The adhesive strength between the layer 3B and the adhesive layer 3A can be improved. As a result,
By using a polyether amide or a polyether amide imide layer as the adhesive layer 3A, it is possible to improve the adhesive strength between the insulating resin film layer 3B and the adhesive layer 3A, and to roughen the surface of the insulating resin film layer 3B. By applying the surface treatment, the adhesive strength between the two can be further improved. Therefore, the resin-encapsulated semiconductor device 1 having the tabless structure can further reduce the above-described current leak between the inner leads 2A.

According to the peel strength test conducted by the present inventor, when the surface of the insulating resin film layer 3B is not roughened, the adhesive layer 3A has a peeling force of about 10 [g] per width of 1 [cm]. Although it peels off, if the surface of the insulating resin film layer 3B is roughened, the adhesive layer 3A does not peel off from the insulating resin film layer 3B, and the adhesive layer 3A itself breaks before the adhesive layer 3A peels off. I was able to get the result.

In addition, the roughening treatment described above is performed by the insulating resin film layer 3B.
It may be performed on the surface of the semiconductor pellet 4 side.

Next, a specific structure of the DIP type tabless structure resin-encapsulated semiconductor device 1 under development by the present inventor will be described with reference to FIG. 4 (partial cross-sectional plan view).

The resin-sealed semiconductor device 1 shown in FIG. 4 is of a DIP type having 18 outer leads 2B. That is, the resin-sealed semiconductor device 1 is a pin insertion type. Signal names applied to the outer leads 2B are specified.
Din is a data input signal and Dout is a data output signal.
▲ ▼ is a write enable signal, ▲ ▼ is a row address strobe signal, and ▲ ▼ is a column address strobe signal. NC is an empty pin and A0 to A9 are address signals. Vcc is a power supply voltage, for example, the operating voltage of the circuit is 5 [V], and Vss is a reference voltage, for example, the ground voltage of the circuit is 0.
[V].

The resin-sealed semiconductor device 1 shown in FIG. 1 and FIG.
Similarly, in the resin-encapsulated semiconductor device 1 shown in FIG. 4, the semiconductor pellet 4 is formed by interposing the adhesive layer 3A, the insulating resin film layer 3B, and the die bonding material layer 3C, which are sequentially laminated on the inner lead 2A. It is equipped with. Semiconductor pellet 4 is 4
It is composed of a DRAM having a large capacity of [Mbit].

As shown in FIG. 5 (chip layout diagram), the semiconductor pellet 4 incorporating this DRAM has a rectangular plane. This semiconductor pellet 4 has a dimension in the long side direction.
The size is 15.2 [mm], and the dimension in the short side direction is 5.9 [mm].

In the central portion of the semiconductor pellet 4, a memory cell array (M-ARY) 4B having a capacity of 1 [Mbit] is arranged in four mats. The memory cell array 4B has word lines extending vertically in the drawing and complementary data lines extending left and right in the drawing.
A memory cell for storing 1 [bit] of information is arranged at the intersection of the word line and the complementary data line. The memory cell is composed of a series circuit of a memory cell selection MISFET and an information storage capacitive element.

An X decoder circuit 4C and a word driver circuit 4D are arranged between the two memory cell arrays 4B arranged on the upper and lower sides in the figure. A Y decoder circuit 4E is arranged between two memory cell arrays 4B arranged on the left and right in the figure. At one end of the memory cell array 4B on the right side of the figure, a sense amplifier circuit
Common input / output signal line and common ground line 4F are arranged.

In the figure, data output buffer circuits 4G and 4I, a CAS / WE system circuit 4H, an X, Y address buffer circuit 4J, and a main amplifier 4K are arranged around the upper memory cell array 4B.

In the figure, a RAS system circuit 4L, an X address buffer circuit 4M, a Y address buffer circuit 4P, an X, Y generator 4N, an X generator 4O, and a SHR are provided around the lower memory cell array 4B.
・ PC generator 4Q is installed.

In the resin-encapsulated semiconductor device 1 configured as above, the dimension of the resin encapsulating material 6 having a rectangular plane in the short side direction is 7.3 [m
m] and the dimension in the long side direction is 22.86 [mm] (900 [mil]).

The resin-encapsulated semiconductor device 1 is formed by using the lead frame 2 shown in FIG. 6 (enlarged plan view of essential parts). As shown in FIG. 7 (plan view), a plurality of lead frames 2 are connected in series before the cutting step and the molding step to form a lead frame unit (multiple lead frame). The lead frame unit of this embodiment is not limited to this, but the six lead frames 2
Are connected in series.

As shown in FIGS. 6 and 7, one end of the inner lead 2A and the outer lead 2B is connected to the outer frame through the tie bar 2D.
It is supported on the 2nd floor. A through hole 2C is provided near the portion of the inner lead 2A supported by the tie bar 2D.
The through hole 2C is configured so that the resin sealing material 6 is bitten into the inside thereof and the inner lead 2A and the outer lead 2B can be reliably held by the resin sealing material 6. The other end of the outer lead 2B is supported by the outer frame 2F via the inner frame 2E. In the figure, a region surrounded by a chain double-dashed line with reference numeral 4 is a region where the semiconductor pellet 4 is mounted.

Outer frame 2F at one end of the lead frame 2 (upper side in the figure)
Is equipped with an assembly alignment hole (pilot hole) 2G. The alignment hole 2G for assembly is used when the above-mentioned insulating resin film layer 3B is bonded to the lead frame 2 via the adhesive layer 3A, or on the insulating resin film layer 3B via the die bond material layer 3C. It is used for alignment when mounting 4. Further, a sealing alignment hole 2H is provided in the outer frame 2F (lower side in the drawing) on the other end side of the lead frame 2. Alignment hole 2H for sealing is lead frame 2
It is used for alignment when the semiconductor pellet 4 mounted on the substrate is sealed with the resin sealing material 6.

Next, FIG. 8 (partial cross-sectional plan view when semiconductor pellets are mounted) and FIG. 9 (semiconductor pellet-non-mounted) regarding a specific structure of the ZIP type resin-sealed semiconductor device 1 under development by the present inventor. (Partial cross-sectional plan view).

The resin-sealed semiconductor device 1 shown in FIG. 8 and FIG.
It is a ZIP type having an outer lead 2B of a book.
This resin-encapsulated semiconductor device 1 is a pin insertion type. The signal names applied to the outer leads 2B are substantially the same as those of the DIP type resin-sealed semiconductor device 1 shown in FIG. 4, and therefore the description thereof is omitted here. The semiconductor pellet 4 of the ZIP type resin-encapsulated semiconductor device 1 has a large size of 4 [Mbit] which is substantially the same as the semiconductor pellet 4 of the DIP type resin-encapsulated semiconductor device 1 shown in FIG. Have capacity
Since it is composed of DRAM, its explanation is omitted here. In FIG. 8, PC on the semiconductor pellet 4 is a peripheral circuit of the DRAM, and the peripheral circuits of the DRAM shown in FIG. 5 are generically shown.

Further, the external terminals 4A of the semiconductor pellet 4 are given symbols P _{1 to} P ₃₅ to indicate the number of arrangements. Similarly, the outer lead 2B resin-encapsulated semiconductor device 1 is numbered as L ₁ ~L ₂₀ to indicate the number.

In this ZIP type resin-sealed semiconductor device 1, a semiconductor pellet 4 is mounted on a tab 2J and an inner lead 2A as shown in FIG. That is, the ZIP-type resin-encapsulated semiconductor device 1 is partially configured with a tabless structure. Similar to the resin-encapsulated semiconductor device 1 shown in FIGS. 1, 2, and 4, the ZIP-type resin-encapsulated semiconductor device 1 includes a tab 2J, an inner lead 2A, and a semiconductor pellet 4. An adhesive layer 3A, an insulating resin film layer 3B, and a die bond material layer 3C, which are sequentially laminated from the former side, are interposed therebetween. As described above, the insulating resin film layer 3B is formed of a polyimide resin layer, and the adhesive layer 3A is formed of a polyetheramide or polyetheramideimide layer.

The tabs are supported by the outer frame (2F) of the lead frame (2) through the tab suspension leads 2I until the step of cutting the resin-sealed lead frame (2) and before the molding step.

In the ZIP-type resin-encapsulated semiconductor device 1, all outer leads 2B are projected from one side surface of the resin encapsulant 6, and the outer leads 2B are formed in a zigzag shape. This type of ZIP-type resin-encapsulated semiconductor device 1 can have a larger mounting area than the DIP-type resin-encapsulated semiconductor device described above.
It is suitable when configuring a large-capacity storage device (for example, a byte machine).

Next, a specific structure of the resin-sealed semiconductor device of the SOJ type tabless structure, which is being developed by the present inventor, will be described with reference to FIGS. 10 and 11 (main part cross-sectional views).

In the SOJ type resin-encapsulated semiconductor device 1 shown in each of FIGS. 10 and 11, the outer lead 2B has a distal end side bent in a J-shape to form a recess 6A formed in the bottom surface of the resin encapsulant 6. Has been inserted. These resin-encapsulated semiconductor devices 1 are surface-mounted. The SOJ type resin-sealed semiconductor device 1 has the semiconductor pellets 4 mounted on the inner leads 2A like the DIP-type resin-sealed semiconductor device 1 and the ZIP-type resin-sealed semiconductor device 1 described above. ing. Similarly, between the inner lead 2A and the semiconductor pellet 4, an adhesive layer 3A, an insulating resin film layer 3B, and a die bond material layer 3C, which are sequentially laminated, are provided.

The SOJ type resin-encapsulated semiconductor device 1 shown in FIG. 10 is similar to the DIP-type resin-encapsulated semiconductor device 1 and the ZIP-type resin-encapsulated semiconductor device 1 described above. The back surface without the external terminal 4A and the front surface of the inner lead 2A are opposed to each other. In the SOJ type resin-sealed semiconductor device 1 shown in FIG. 11, the surface of the semiconductor pellet 4 on which the external terminals 4A are present (element forming surface) and the surface of the inner lead 2A are opposed to each other. That is, the resin-sealed semiconductor device 1 is
The inner lead 2A is bonded to the element forming surface of the semiconductor pellet 4 with the adhesive layer 3A, the insulating resin film layer 3B, and the die bonding material layer 3C sequentially interposed from the surface of the inner lead 2A. The external terminal 4A of the semiconductor pellet 4 is arranged in a substantially central portion.

Next, a method for assembling the DIP type resin-sealed semiconductor device 1 shown in FIGS. 4 to 7 will be described with reference to FIG. 12 (assembly flow chart).

First, the lead frame unit shown in FIG.
The film is supplied to the film sticking device 7 shown in Fig. 13 (schematic configuration diagram of the sticking device) <10>. Each lead frame 2 of the lead frame unit is made of an iron-nickel alloy in this embodiment. The shape of each lead frame 2 is usually formed by pressing or etching.

Next, the lead frame unit supplied to the film sticking device 7 is aligned with the film sticking position of the heat block 7A of the film sticking device 7 and fixed <11>. The alignment of the lead frame unit is performed through the assembly alignment hole (pilot hole) 2G of each lead frame 2.

Next, a long insulating film is supplied onto the die 7B arranged at a position facing the heat block 7A of the film sticking device 7, and the long insulating film is sandwiched by the die 7B and the punch guide 7C. This insulating film is a composite film formed of an insulating resin film layer 3B and an adhesive layer (polyether amide or polyether amide imide layer) 3A applied to the lower surface (the side that adheres to the inner leads 2A). . Since the lead frame 2 is made of an iron-nickel alloy material, the insulating resin film layer 3B preferably has a thickness of about 12 mm.
A polyimide resin layer having a linear thermal expansion coefficient in the low range of about 10 ⁻⁶ [° C. ⁻¹ ] is used. The adhesion layer 3A has a polyether amide or polyether amide imide layer of 170 to 220
Glass transition temperature in the low range of [℃] or 200-260 [℃]
Use a glass transition temperature in the high range of.

Next, as shown in FIG. 13, the die 7B and the punch guide
The insulating film sandwiched with 7C is punched with punch 7D to a specified size <12>. In the case of the DIP type resin-sealed semiconductor device 1 described above, the insulating film is, for example, 5.7 [mm] × 15.5 [m
It is punched out in the size [m].

Next, as shown in FIG. 14 (schematic configuration diagram of the film sticking apparatus), the insulating resin film layer 3B of the punched insulating film is temporarily attached to the surface of the inner lead 2A via the adhesive layer 3A as the lower layer. Attach <13>. This tack is a punch
The pressing rod 7E protruding from the inside of 7D is used to spot at one or more points in the vicinity of the center position of the insulating film, and the insulating resin film layer 3B is not moved.

When a polyether amide or polyether amide imide layer having a glass transition temperature in the high range of 200 to 260 [° C.] is used as the adhesive layer 3A and about 1% of the solvent remains, the high temperature softening fluidity is It is improved, and temporary attachment can be performed at a low temperature of about 250 [° C.]. In addition, the temporary attachment can be performed with an extremely slight pressing force equal to or less than the main pressure bonding described later. Also, the temporary tacking time is
It is a short time of about 0.3 to 0.5 seconds.

Temporary attachment is performed for each lead frame 2 of the lead frame unit. That is, in this embodiment, temporary attachment is performed 6 times for each lead frame unit. For temporary attachment of each lead frame 2, since the insulating film is adhered to the surface of the inner lead 2A while performing the alignment with the insulating film, the temporary attachment with high alignment accuracy can be performed. If a temporary attachment failure occurs, the alignment is performed again <11> and the subsequent steps are repeated.

Next, the temporarily attached insulating film is subjected to the first baking treatment <14>. The baking treatment is performed for about 1 minute at a temperature of about 250 to 300 [° C.] within the range of the temporary attachment temperature. The baking treatment can dehumidify the insulating film and prevent the occurrence of foaming during the main pressure bonding in the next step.

In addition, the first baking process is 200-260 [℃]
When the polyether amide or polyether amide imide layer having a glass transition temperature in a high range is used as the adhesive layer 3A, the excess solvent remaining in the adhesive layer 3A can be reduced, and similarly foaming at the time of main pressure bonding Can be prevented. Further, in the first baking process, the solvent remaining in the adhesive layer 3A can be vaporized, and the vaporized solvent can be adsorbed on the surface of the inner lead 2A to be adhered. The solvent adsorbed on the surface of the inner lead 2A originally has an affinity with the adhesive layer (polyether amide or polyether amide imide layer) 3A, so the wettability between the inner lead 2A and the adhesive layer 3A is increased,
The adhesive strength between the two can be increased.

The baking treatment is performed at a temperature of 250 [° C.] or higher because the adhesive layer 3A does not exhibit good adhesiveness at a temperature below the temporary bonding temperature, that is, at a temperature once experienced. In addition, the baking treatment is performed at a temperature of 300 [° C.] or less because the adhesive layer 3A decomposes and loses its adhesiveness when the temperature exceeds 370 [° C.].

Next, the insulation film that has been temporarily attached and that has been subjected to the first baking treatment is subjected to full pressure bonding, and the inner lead 2A
The insulating resin film layer 3B is securely adhered to the surface of the via the adhesive layer 3A <15>. Main pressure bonding is about 1 at a temperature of about 300 [° C]
Do 0 seconds. The main pressure bonding is performed for each lead frame unit, and the insulating film temporarily attached to the surface of the inner lead 2A of each lead frame 2 of the lead frame unit is collectively bonded. Therefore, the main pressure bonding time required for each lead frame 2 is approximately the same as the one-time temporary bonding time. It is important for the main pressure bonding to apply a uniform pressing force to the insulating film of each inner lead 2A. By carrying out the main pressure bonding in this way, it is possible to reduce the inclusion of air in the adhesive interface between the adhesive layer 3A of the insulating film and the inner lead 2A, and to improve the adhesive strength of the adhesive interface. The main crimping is performed with the entire pressing pressure against the lead frame unit being, for example, about 130 [kg]. Therefore,
In this full pressure bonding, the pressure per unit area received by the insulating film is approx.
250 [g / mm ² ], the pressure per unit area received by the lead frame 2A is about 800 [g / mm ² ] and can be performed with an extremely small pressing force.

Next, when the polyether amide or polyether amide imide layer having a glass transition temperature in the high range of 200 to 260 [° C.] is used as the adhesive layer 3A, the excess solvent remaining in the adhesive layer 3A is substantially removed. In order to do this, the second baking process is performed <16>. The second baking process is performed at substantially the same temperature and time as the first baking process.

The above-mentioned first baking processing, main pressure bonding, and second baking processing are each performed using the heat block 7A incorporated in the film sticking device 7, but the present invention is not necessarily limited to this.

Next, the lead frame unit is taken out from the film sticking device <17> and the lead frame unit is conveyed to the pellet bonding device. In the pellet bonding apparatus, the die bond material layer 3C is applied on the surface of the insulating resin film layer 3B adhered on the inner lead 2A of each lead frame 2 of the lead frame unit, and insulation is performed via this die bond material layer 3C. The semiconductor pellet 4 is mounted on the conductive resin film layer 3B <18>.

Next, wire bonding is performed by a wire bonding device, and the external terminal 4A of the semiconductor pellet 4 and the inner lead 2A are connected via the bonding wire 5 <1
9>.

Next, the lead frame unit is conveyed from the bonding device to the resin sealing device, and the semiconductor pellets 4 and the like are sealed with the resin sealing material 6 by the resin sealing device <20>.

Next, the lead frame unit is conveyed to a cutting / molding apparatus, and the cutting / molding apparatus is used to outer frame 2F of the lead frame 2.
The DIP type resin-sealed semiconductor device 1 according to the present embodiment is obtained by cutting the inner frame 2E and the like and molding it into a predetermined shape <21>.
Is completed.

Thus, the resin-less type semiconductor device 1 having the tabless structure
In the method of assembling, the glass transition temperature of the insulating resin film layer 3B having a glass transition temperature of a slight amount of the solvent left as the adhesive layer 3A on the surface of the side to be adhered to the inner leads 2A is about 200 to 260.
Forming a polyether amide or polyether amide imide layer in the range of [° C.], and the inner lead 2A
And the step of adhering the insulating resin film layer 3B by thermocompression with the polyether amide or polyether amide imide layer (3A) interposed therebetween in the polyether amide or polyether amide imide layer (3A). Improves the high temperature softening and fluidity, and the thermocompression bonding temperature for adhering the insulating resin film layer 3B to the inner lead 2A is about 20 to 50 [° C]
Since it can be reduced, it is possible to adopt a low temperature process and improve workability in the assembly process of the resin-sealed semiconductor device 1. Further, in the assembly process of the resin-sealed semiconductor device 1, thermocompression bonding can be performed at a low temperature, so that the assembly process time can be shortened.

Further, in the method of assembling the resin-encapsulated semiconductor device 1 having the tabless structure, the glass transition temperature of the adhesive layer 3A is about 170 to 260 [° C.] on the surface of the insulating resin film layer 3B on the side to be bonded to the inner leads 2A. ] Forming a polyetheramide or polyetheramideimide layer in the range of
A step of temporarily attaching the insulating resin film layer 3B by thermocompression with the polyetheramide or polyetheramideimide layer (3A) interposed on the inner lead 2A, and temporarily attaching to the inner lead 2A. By providing a step of permanently bonding the insulating resin film layer 3B by thermocompression bonding, the insulating resin film layer 3B is bonded to the inner lead 2A by a plurality of thermocompression bonding, and the inner lead 2A and the polyether amide are bonded. Or polyether amide imide layer (3
Since air entrainment that occurs during thermocompression bonding at the adhesive interface with A) can be reduced, the adhesive strength between the inner lead 2A and the polyether amide or polyether amide imide layer (3A) is increased to reduce adhesion defects. However, the manufacturing yield of the resin-encapsulated semiconductor device 1 can be improved.

Further, in the method for assembling the resin-encapsulated semiconductor device 1 having the tabless structure, the glass transition temperature in which a small amount of solvent remains as the adhesive layer 3A on the surface of the side of the insulating resin film layer 3B that is adhered to the inner leads 2A. Forming a polyether amide or polyether amide imide layer having a temperature range of about 200 to 260 [° C.], and forming the polyether amide or polyether amide imide layer (3) on the inner lead 2A.
A) interposing the insulating resin film layer 3B temporarily by thermocompression, and reducing the residual amount of the solvent of the polyetheramide or polyetheramideimide layer (3A) by baking treatment. By including a step and a step of permanently attaching the insulating resin film layer 3B temporarily attached to the inner lead 2A by thermocompression bonding, the polyetheramide or polyetheramideimide layer (3A)
By improving the high temperature softening fluidity of the insulating resin film layer 3B can be temporarily attached to the inner lead 2A by thermocompression bonding with high workability and low temperature, and by the baking treatment of the insulating resin film layer 3B. Dehumidification and evaporation of excess solvent in the polyetheramide or polyetheramideimide layer (3A) can reduce foaming that occurs when the insulating resin film layer 3B is permanently attached to the inner lead 2A, and It is possible to increase the strength, reduce adhesion defects, and improve the yield in the assembly process of the resin-encapsulated semiconductor device 1. In the baking treatment, the solvent vaporized from the polyether amide or polyether amide imide layer (3A) is adsorbed on the adhered surface of the inner lead 2A, and the inner lead 2A and the polyether amide or polyether amide imide layer (3A). ), The adhesive strength can be further increased.

In the above description, the case where the present invention is mainly applied to the resin-sealed semiconductor device having the tabless structure has been described. However, the present invention is to mount the semiconductor pellets on the tabs and to provide the inner leads with the insulating resin film layer. It can be applied to a resin-sealed semiconductor device fixed with (insulating resin tape). This insulating resin tape is used for fixing the long inner leads to prevent them from deforming,
The insulating resin tape itself is also sealed with the resin sealing material. Therefore, as the structure of the insulating resin tape, the insulating resin film layer and the adhesive layer (polyether amide or polyether amide imide layer) provided on the inner lead side surface of the insulating resin film layer are formed as in the above-described embodiment. Composed of composite membrane.

Further, the present invention can be applied to a ceramic-encapsulated semiconductor device having a tabless structure or a structure having a tab, in which a resin encapsulant is applied to a semiconductor pellet or an inner lead portion by a potting method.

Further, according to the present invention, the semiconductor pellet 4 of the resin-encapsulated semiconductor device 1 having the tabless structure may be configured to have a storage function or a logical memory other than DRAM.

In addition, the present invention provides the adhesive layer 3A, the insulating resin film layer 3B, and the die bond material layer 3C, which are interposed between the inner lead 2A and the semiconductor pellet 4 of the resin-sealed semiconductor device 1 having the tabless structure, as follows. Materials may be used.

(1) Adhesive layer 3A: thermoplastic resin other than polyether amide or polyether amide imide resin, silicone resin, B-stage epoxy resin, B-stage polyimide resin, etc. The thermoplastic resin, alicyclic polyimide resin, polyester resin, polysulfone resin, aromatic polyetherimide resin, aromatic polyester imide resin, polyphenylene sulfide resin, polyketone imide resin, polyether ketone resin, polyether sulfone resin, For example, polysulfone resin.

(2) Insulating resin film layer 3B ... The thermoplastic resin, polyimide resin, epoxy resin containing glass cloth, etc.

(3) Die bond material layer 3C ... Same as the adhesive layer 3A.

Although the invention made by the present inventor has been specifically described based on the above-described embodiments, the present invention is not limited to the above-described embodiments and can be variously modified without departing from the scope of the invention. Is.

〔The invention's effect〕

The effects of typical inventions among the inventions disclosed in the present application will be briefly described as follows.

(1) The electrical reliability of the semiconductor device can be improved.

(2) The electrical reliability of the semiconductor device can be further improved.

(3) Workability in manufacturing a semiconductor device can be improved.

(4) The manufacturing yield of semiconductor devices can be improved.

(5) The manufacturing yield of the semiconductor device can be improved, and the electrical reliability of the semiconductor device can be improved.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of an essential part showing a basic structure of a resin-less type semiconductor device having a tabless structure which is an embodiment of the present invention, and FIG. 2 is a plan view of the resin-type semiconductor device. FIG. 3 is a diagram showing a current leakage characteristic of the resin-sealed semiconductor device, and FIG. 4 is a DIP having a tabless structure which is an embodiment of the present invention.
5 is a partial cross-sectional plan view showing a specific structure of a resin-sealed semiconductor device of a mold, FIG. 5 is a chip layout diagram of a semiconductor pellet of the resin-sealed semiconductor device, and FIG. FIG. 7 is an enlarged plan view of a main part of a lead frame used in a semiconductor device, FIG. 7 is a plan view of the lead frame, and FIG.
9 is a partial cross-sectional plan view showing a concrete structure of a resin-encapsulated semiconductor device when a semiconductor pellet is mounted, and FIG. 10 and 11 are cross-sectional views showing a concrete structure of a SOJ type resin-sealed semiconductor device having a tabless structure, which is an embodiment of the present invention, and FIG. 12 is the resin-sealed semiconductor device. 13 and 14 are schematic flow charts of the film sticking apparatus used in the assembling process. In the figure, 1 ... Resin-sealed semiconductor device, 2 ... Lead frame, 2A ... Inner lead, 2B ... Outer lead,
3A …… Adhesive layer, 3B …… Insulating resin film layer,, 3C ……
Die bond material layer, 4 ... Semiconductor pellet, 4A ... External terminal, 5 ... Bonding wire, 6 ... Resin encapsulating material, 7
…… It is a film sticking device.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masahiro Ichitani 1450, Kamimizuhonmachi, Kodaira-shi, Tokyo Inside the Musashi Factory, Hitachi, Ltd. (72) Toshihiro Yasuhara 1450, Kamisuimoto-cho, Kodaira, Tokyo Stockholders Company Hitachi, Ltd. Musashi Factory (72) Inventor Takashi Suzumura 1450, Kamimizuhonmachi, Kodaira, Tokyo Stock Company Hitachi, Ltd. Musashi Factory (72) Inventor, Mamoru Mita 1450, Kamisuihonmachi, Kodaira, Tokyo Hitachi Ltd. In-house Musashi Plant (72) Inventor Takashi Morinaga 1450, Kamimizuhoncho, Kodaira-shi, Tokyo Hitachi Limited Musashi Plant (72) Inventor Yoshihiro Nomura 1450, Kamimizumoto-cho, Kodaira-shi, Tokyo Hitachi Ltd. Musashi in the factory

Claims (18)

(57) [Claims] 1. In a semiconductor device in which at least a portion of an insulating resin film layer to be bonded to an inner lead is sealed with a resin sealing material, the insulating resin film layer is bonded to a surface of the insulating resin film layer on a side to be bonded to the inner lead. A semiconductor device comprising a polyetheramide or polyetheramideimide layer having a glass transition temperature in the range of 170 to 260 [° C.] as a layer. 2. The semiconductor according to claim 1, wherein the polyether amide or polyether amide imide layer has a glass transition temperature in the low range of 170 to 220 [° C.]. apparatus. 3. The semiconductor according to claim 1, wherein the polyether amide or polyether amide imide layer has a glass transition temperature in a high range of 200 to 260 [° C.]. apparatus. 4. The polyether amide or polyether amide imide layer is formed with a film thickness of about 10 to 50 [μm], according to any one of claims 1 to 3. Each semiconductor device described. 5. The semiconductor device according to any one of claims 1 to 4, wherein the insulating resin film layer is a polyimide resin layer. 6. The insulating resin film layer has a thickness of about 5 × 10 ⁻⁶ .
The semiconductor device according to claim 5, having a linear thermal expansion coefficient in the range of 30 × 10 ⁻⁶ [° C. ⁻¹ ]. 7. The insulating resin film layer is about 25-300.
7. The semiconductor device according to claim 5, wherein the semiconductor device is formed with a film thickness of approximately [μm]. 8. The semiconductor device according to claim 1, wherein the inner lead is formed of an iron-nickel alloy material or a copper-based material. 9. A semiconductor pellet is mounted on the surface of the insulating resin film layer opposite to the surface on which the inner leads are adhered, and semiconductor pellets are mounted on the surface. Each semiconductor device described. 10. A polyimide resin die bond material layer or an epoxy resin die bond material layer is formed as an adhesive layer between the insulating resin film layer and the semiconductor pellet. 9. The semiconductor device according to item 9. 11. The semiconductor device according to claim 1, wherein the resin sealing material is a phenol-curable epoxy resin material. 12. The semiconductor device according to claim 11, wherein the resin sealing material is added with silicone rubber and a filler. 13. A semiconductor device in which a portion of an insulating resin film layer bonded to an inner lead is sealed with at least a resin sealing material, and a surface of the insulating resin film layer on a side bonded to the inner lead is blasted. And a polyether amide or polyether amide imide layer having a glass transition temperature in the range of 170 to 260 [° C.] as an adhesive layer on the surface of the insulating resin film layer. . 14. In a method of manufacturing a semiconductor device, wherein a portion of an insulating resin film layer to be bonded to an inner lead is sealed with at least a resin sealing material, a portion of the insulating resin film layer to be bonded to the inner lead is provided. The glass transition temperature is about 200-260 with some solvent left as an adhesive layer on the surface.
Forming a polyether amide or polyether amide imide layer in the range of [° C.], and bonding the insulating resin film layer by thermocompression bonding with the polyether amide or polyether amide imide layer interposed in the inner lead A method of manufacturing a semiconductor device, comprising: 15. The semiconductor device according to claim 14, wherein the solvent left in the polyether amide or polyether amide imide layer is normal-methyl-2-pyrrolidone, butyl cellosolve acetate or the like. Production method. 16. The solvent left in the polyether amide or polyether amide imide layer is about 0.1 to 10% by weight, and the solvent according to claim 14 or 15, Manufacturing method of semiconductor device. 17. A method for manufacturing a semiconductor device, wherein at least a portion of an insulating resin film layer bonded to an inner lead is sealed with a resin sealing material, the insulating resin film layer having a portion to be bonded to the inner lead. Forming a polyetheramide or polyetheramideimide layer having a glass transition temperature in the range of about 170 to 260 [° C] as an adhesive layer on the surface, and interposing the polyetheramide or polyetheramideimide layer on the inner lead. And a step of temporarily attaching the insulating resin film layer by thermocompression bonding, and a step of permanently attaching the insulating resin film layer temporarily attached to the inner lead by thermocompression bonding. Of manufacturing a semiconductor device. 18. In a method of manufacturing a semiconductor device, wherein a portion of an insulating resin film layer to be bonded to an inner lead is sealed with at least a resin sealing material, a portion of the insulating resin film layer to be bonded to the inner lead is provided. The glass transition temperature is about 200-260 with some solvent left as an adhesive layer on the surface.
A step of forming a polyether amide or polyether amide imide layer in the range of [° C.], and partially heating the insulating resin film layer by interposing the polyether amide or polyether amide imide layer on the inner lead. Temporarily attaching by pressure bonding, reducing the residual amount of the solvent of the polyetheramide or polyetheramideimide layer by baking, and thermobonding the insulating resin film layer temporarily attached to the inner lead A method of manufacturing a semiconductor device, comprising: