JP2617539B2 - Equipment for producing cubic boron nitride film - Google Patents
Equipment for producing cubic boron nitride filmInfo
- Publication number
- JP2617539B2 JP2617539B2 JP63264108A JP26410888A JP2617539B2 JP 2617539 B2 JP2617539 B2 JP 2617539B2 JP 63264108 A JP63264108 A JP 63264108A JP 26410888 A JP26410888 A JP 26410888A JP 2617539 B2 JP2617539 B2 JP 2617539B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- boron nitride
- reaction chamber
- nitride film
- cubic boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052582 BN Inorganic materials 0.000 title claims description 17
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010292 electrical insulation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- -1 borazine ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、硬質で、熱伝導性、電気絶縁性に優れた立
方晶窒化ほう素膜の製造法に関する。Description: TECHNICAL FIELD The present invention relates to a method for producing a cubic boron nitride film which is hard and has excellent thermal conductivity and electrical insulation.
［従来の技術］ 窒化ほう素は大別すると常圧で容易に合成される軟質
で潤滑性の優れた六方晶窒化ほう素（以下hBNという）
と、高温高圧で合成される硬質の立方晶窒化ほう素（以
下cBNという）がある。[Prior art] Boron nitride is roughly classified into soft, highly lubricious hexagonal boron nitride (hBN), which is easily synthesized at normal pressure.
And hard cubic boron nitride (hereinafter referred to as cBN) synthesized at high temperature and pressure.
この内cBNは、ダイヤモンドに次いで高い硬度を有
し、また高熱伝導性、高電気絶縁性を有するためcBNを
被覆膜として基材の表面に形成することが試みられてい
る。Among them, cBN has the second highest hardness next to diamond, and also has high thermal conductivity and high electrical insulation. Therefore, attempts have been made to form cBN as a coating film on the surface of a substrate.
従来、基材表面に窒化ほう素被覆膜を形成する方法と
しては、大別すると（Ａ）化学的蒸着法（CVD;Chemical
Vapor Deposition）によるものと、（Ｂ）物理的蒸着
法（PVD;Physical Vapor Deposition）によるものとが
ある。Conventionally, a method of forming a boron nitride coating film on a substrate surface is roughly classified into (A) Chemical vapor deposition (CVD).
Vapor deposition (BPD) and (B) physical vapor deposition (PVD).
ここで、前者の方法としては、ハロゲン化ほう素又
は、ジボラン等のほう化物と窒素又はアンモニアとの反
応ガス中で行なうものがある。Here, as the former method, there is a method performed in a reaction gas of boron or halide such as diborane and nitrogen or ammonia.
一方後者の方法としては、イオンビーム蒸着法があ
る。この方法は、例えば、 ジャーナル・オブ・バキューム・サイエンス・アンド
・テクノロジー誌 第Ａ−１（２）巻 1983年（Journa
l of Vacunm Science and Technology A−１（２）198
3） 第323頁〜第325頁 に記載の如く、カウフマン型イオン源を用い次のように
行う。On the other hand, as the latter method, there is an ion beam evaporation method. This method is described in, for example, Journal of Vacuum Science and Technology, A-1 (2), 1983 (Journa
l of Vacunm Science and Technology A-1 (2) 198
3) As described on pages 323 to 325, the reaction is performed as follows using a Kauffman-type ion source.
（ａ）まず、真空容器内を予備排気して所定の減圧状態
にした後、ボラジン（B3N3H6）の蒸気を導入する。(A) First, the inside of the vacuum vessel is preliminarily evacuated to a predetermined reduced pressure state, and then borazine (B 3 N 3 H 6 ) vapor is introduced.
（ｂ）次いでタングステンフィラメントより放出された
電子をアノードに到達する前にボラジンの中性粒子に衝
突させイオン化させる。(B) Next, before the electrons emitted from the tungsten filament reach the anode, they collide with neutral particles of borazine to be ionized.
（ｃ）このようにして得たボラジンイオンを加速器で加
速しイオンビームを作り、このイオンビームによって窒
化ほう素膜を得る。(C) The borazine ions thus obtained are accelerated by an accelerator to form an ion beam, and a boron nitride film is obtained by the ion beam.
［発明が解決しようとする課題］ 従来の基材表面に窒化ほう素からなる被覆層を形成す
る方法の内CVD法による方法は、単なる熱的な気相反応
であるため、軟質な六方晶窒化ほう素からなる被覆層し
か形成されないという問題がある。[Problems to be Solved by the Invention] Among the conventional methods of forming a coating layer made of boron nitride on the surface of a substrate, the method of CVD is a simple thermal gas phase reaction, and is therefore a soft hexagonal nitride. There is a problem that only a coating layer made of boron is formed.
また、イオンビーム蒸着法よる方法は、cBNの含有量
が少ないため、cBN本来の硬さに比べ遥かに低い硬さの
ものになるという問題を有する。In addition, the method using the ion beam evaporation method has a problem that since the content of cBN is small, the hardness is much lower than the original hardness of cBN.
本発明は上記問題を解決するためになされたもので、
硬質で、熱伝導性、電気絶縁性に優れた立方晶窒化ほう
素膜を極めて容易に得ることができる立方晶窒化ほう素
膜の製造装置を提供することを目的とする。The present invention has been made to solve the above problems,
It is an object of the present invention to provide an apparatus for manufacturing a cubic boron nitride film which can extremely easily obtain a cubic boron nitride film which is hard and excellent in thermal conductivity and electrical insulation.
［課題を解決するための手段］ 本発明に係る立方晶窒化ほう素膜の製造装置は、 （Ａ）基材及びほう素蒸発源を収容する反応室と、 （Ｂ）前記反応室に窒素又は窒素を含む化合物と希ガス
との混合ガスを導入する混合ガス導入手段と、 （Ｃ）前記反応室内に電子サイクロトロン共鳴プラズマ
を発生させるECRプラズマ供給手段と、 （Ｄ）基材にほう素を蒸着しながら該基材にバイアス電
圧を印加するバイアス電圧印加手段と、 （Ｅ）ヒーターを内蔵する回転可能な基材ホルダーを具
備し、 （Ｆ）前記基材ホルダーは、プラズマ発生室に対向する
ように、反応室の上部に設置するとともに、マッチング
ボックスを介して高周波電源に接続し、 （Ｇ）蒸発源は、基材ホルダーの下部に設置することを
特徴とする。[Means for Solving the Problems] An apparatus for producing a cubic boron nitride film according to the present invention comprises: (A) a reaction chamber containing a substrate and a boron evaporation source; and (B) nitrogen or nitrogen in the reaction chamber. A mixed gas introducing means for introducing a mixed gas of a compound containing nitrogen and a rare gas; (C) an ECR plasma supply means for generating an electron cyclotron resonance plasma in the reaction chamber; and (D) a vapor deposition of boron on the substrate. A bias voltage applying means for applying a bias voltage to the substrate, and (E) a rotatable substrate holder having a built-in heater. (F) the substrate holder is opposed to the plasma generation chamber. And (G) the evaporation source is installed at the lower part of the substrate holder, while being installed at the upper part of the reaction chamber and connected to a high frequency power supply via a matching box.
［作用］ 本発明装置を用いることにより、反応室内に原料ガス
からなる高純度で分解率の高い電子サイクロトロン共鳴
プラズマ（ECRプラズマ）を作り、これとほう素の蒸発
を組み合わせることにより高純度で基材上に、硬質で、
熱伝導性、電気絶縁性に優れた立方晶窒化ほう素膜を極
めて容易にかつ安全に得ることができる。[Operation] By using the apparatus of the present invention, a high-purity electron cyclotron resonance plasma (ECR plasma) composed of a raw material gas and having a high decomposition rate is produced in a reaction chamber, and the high-purity electron cyclotron resonance plasma is combined with evaporation of boron. On the material, hard,
A cubic boron nitride film excellent in thermal conductivity and electrical insulation can be obtained very easily and safely.
［実施例］ 本発明の実施例を第１図に示す。FIG. 1 shows an embodiment of the present invention.
第１図において １は、ガス導入管２を有する反応室（真空容器）であ
る。In FIG. 1, reference numeral 1 denotes a reaction chamber (vacuum vessel) having a gas introduction pipe 2.
反応室１の上部には基材３を取り付けた基材ホルダー
４を設置する。At the upper part of the reaction chamber 1, a substrate holder 4 to which the substrate 3 is attached is installed.
基材ホルダー４は、ヒーター電源５に接続したヒータ
ー６を内蔵する。また、基材ホルダー４はマッチングボ
ックス７を介して高周波電源８に接続する。The substrate holder 4 incorporates a heater 6 connected to a heater power supply 5. The substrate holder 4 is connected to a high frequency power supply 8 via a matching box 7.
図中、９はプラズマ発生室で、これを囲むようにして
磁界印加用コイル10を設ける。またこのプラズマ発生室
９には、たとえば石英板などのマイクロ波の透過性の良
い真空シール材11を介して導波管12を接続する。In the drawing, reference numeral 9 denotes a plasma generation chamber, and a magnetic field application coil 10 is provided so as to surround the plasma generation chamber. Further, a waveguide 12 is connected to the plasma generation chamber 9 via a vacuum sealing material 11 having good microwave permeability such as a quartz plate.
プラズマ発生室９は、第１図に示すように基材ホルダ
ー４に対向して設置する。The plasma generation chamber 9 is installed to face the substrate holder 4 as shown in FIG.
基材ホルダー４の下部には蒸発源13を設置する。この
蒸発源にはたとえば電子ビーム蒸発源を用い、蒸発材料
としては金属ほう素14を用いる。ここからほう素蒸気15
を基材３上に蒸着させる。そして上記のように構成した
装置を用いて基材３上にcBN膜16を形成する。An evaporation source 13 is provided below the substrate holder 4. For example, an electron beam evaporation source is used as this evaporation source, and metal boron 14 is used as an evaporation material. Boron vapor 15 from here
Is deposited on the substrate 3. Then, the cBN film 16 is formed on the base material 3 using the apparatus configured as described above.
そのため先ず、Siウエハーからなる基材３を基材ホル
ダー４に取り付ける。For this purpose, first, the substrate 3 made of a Si wafer is attached to the substrate holder 4.
次に反応室（真空容器）１内を２×10-6torr以下の減
圧状態になるように予備排気したのち、ガス導入管２か
らプラズマ発生室９内に窒素、アルゴン混合ガス（窒素
35％）を20cm3/minの流量で導入し、内部圧力を３×10
-4torrに維持する。Next, the interior of the reaction chamber (vacuum vessel) 1 is pre-evacuated to a reduced pressure of 2 × 10 −6 torr or less, and then a mixed gas of nitrogen and argon (nitrogen) is introduced into the plasma generation chamber 9 from the gas introduction pipe 2.
35%) at a flow rate of 20 cm 3 / min, and the internal pressure is 3 × 10
Keep at -4 torr.
次いで、基材３の温度が400℃になるようにヒーター
６で加熱する。Next, the substrate 3 is heated by the heater 6 so that the temperature of the substrate 3 becomes 400 ° C.
次いで、磁界印加用コイル10によりプラズマ発生室９
内に磁界を印加し、マイクロ波（2.45GHz）を導波管12
を介してプラズマ発生室９に導入し電子サイクロトロン
共鳴プラズマ（ECRプラズマ）を発生させる。Next, the plasma generating chamber 9 is
A magnetic field is applied to the inside of the
To the plasma generation chamber 9 to generate electron cyclotron resonance plasma (ECR plasma).
そして蒸発源13よりほう素の蒸着を行う。 Then, boron is evaporated from the evaporation source 13.
基材ホルダー４は回転可能な構造にしてあるので、均
一な膜形成を行うことができる。Since the substrate holder 4 has a rotatable structure, uniform film formation can be performed.
また基材ホルダー４には、高周波電源８により高周波
電力（13.56MHz）を印加し、セルフバイアス（−400V）
を発生させる。このようにして基材３上に厚さ0.1mmのc
BN膜16を形成する。A high frequency power (13.56 MHz) is applied to the base material holder 4 by a high frequency power supply 8 and a self bias (−400 V) is applied.
Generate. In this way, a 0.1 mm thick c
The BN film 16 is formed.
以上の様にして得た被膜を赤外吸収スペクトル分析に
より調べた結果、立方晶固有の1100cm-1付近の波数の吸
収は認められるが六方晶による1350cm-1及び780cm-1付
近の吸収は認められなかった。Observed absorption around 1350 cm -1 and 780 cm -1 result of examination, the absorption wave number in the vicinity of cubic specific 1100 cm -1 is observed by hexagonal by coating obtained as described infrared absorption spectrum analysis of the above I couldn't.
また、電子線回析装置による電子線回析環図形から
も、形成された膜は立方晶窒化ほう素の多結晶体膜であ
ることが確認された。In addition, it was also confirmed from the electron diffraction ring pattern by the electron diffraction apparatus that the formed film was a polycrystalline film of cubic boron nitride.
なお、反応室ガスである窒素、アルゴンの混合比が窒
素50％以上では被膜にhBN相が混在する。When the mixture ratio of nitrogen and argon, which are reaction chamber gases, is 50% or more, hBN phase is mixed in the coating.
そしてセルフバイアス電圧が−100V〜−1000Vの範囲
内ではcBN膜が形成され−100V未満ではhBN相が混在し、 また、−100Vを越えるとエッチング効果が支配的とな
り膜の堆積が起こらない。When the self-bias voltage is in the range of -100V to -1000V, a cBN film is formed. When the self-bias voltage is lower than -100V, the hBN phase is mixed. When the self-bias voltage exceeds -100V, the etching effect is dominant and the film is not deposited.
上記実施例では窒素とアルゴンの混合ガスを用いた場
合について述べたが、窒素を含む化合物（例えばアンモ
ニア）と希ガスの混合ガス等を用いてもよい。In the above embodiment, the case where a mixed gas of nitrogen and argon is used is described. However, a mixed gas of a compound containing nitrogen (for example, ammonia) and a rare gas may be used.
本発明において、上記窒素を含む化合物としてはアン
モニアなどが挙げられる。また、上記希ガスとしては、
アルゴン、ネオン、キセノン、クリプトン等の一般的な
ものが挙げられる。In the present invention, examples of the compound containing nitrogen include ammonia. Further, as the rare gas,
Common examples include argon, neon, xenon, and krypton.
また本発明において基材にバイアスを印加するのは、
本発明装置を用いる減圧下、低温での処理であり、バイ
アス電圧を印加することにより、プラズマ中で生成した
イオンを基材に衝突させることによって高圧、高温と同
等な条件を作るためである。In the present invention, the bias is applied to the substrate,
This is a treatment at a low temperature under a reduced pressure using the apparatus of the present invention, in order to create conditions equivalent to a high pressure and a high temperature by applying a bias voltage to cause ions generated in plasma to collide with a substrate.
［発明の効果］ 本発明は上記のように構成されているので、以下に記
載するような効果を奏する。[Effects of the Invention] The present invention is configured as described above, and has the following effects.
（１）本発明にかかる立方晶窒化ほう素膜の製造装置に
よれば、硬質で、熱伝導性、電気絶縁性に優れる立方晶
窒化ほう素膜を極めて容易に得ることができる。(1) According to the apparatus for producing a cubic boron nitride film according to the present invention, a cubic boron nitride film that is hard and has excellent thermal conductivity and electrical insulation can be obtained very easily.
（２）基材ホルダーとプラズマ発生室とを対向させて設
置しているので、膜形成の効率を向上することができ
る。(2) Since the base material holder and the plasma generation chamber are installed facing each other, the efficiency of film formation can be improved.
（３）基材を取付ける基材ホルダーは、回転できるよう
に構成されているので、均一な膜形成を行うことができ
る。(3) Since the substrate holder on which the substrate is mounted is configured to be rotatable, uniform film formation can be performed.
第１図は本発明の実施例にかかる立方晶窒化ほう素膜の
製造装置の説明図である。 （符号の説明） １……反応室（真空容器）、 ２……ガス導入口、 ３……基材、 ４……基材ホルダー、 ５……ヒーター電源、 ６……ヒーター、 ７……マッチングボックス、 ８……高周波電源、 ９……プラズマ発生室、 10……磁界印加用コイル、 11……真空シール材、 12……導波管、 13……蒸発源、 14……金属ほう素、 15……ほう素蒸気、 16……cBN膜、 17……シールド。FIG. 1 is an illustration of an apparatus for producing a cubic boron nitride film according to an embodiment of the present invention. (Explanation of symbols) 1 ... reaction chamber (vacuum vessel), 2 ... gas inlet, 3 ... substrate, 4 ... substrate holder, 5 ... heater power supply, 6 ... heater, 7 ... matching Box 8 High frequency power supply 9 Plasma generating chamber 10 Magnetic field applying coil 11 Vacuum sealing material 12 Waveguide 13 Evaporation source 14 Metal boron 15 ... boron vapor, 16 ... cBN film, 17 ... shield.
Claims (1)
を収容する反応室（１）と、 （Ｂ）前記反応室（１）に窒素又は窒素を含む化合物と
希ガスと混合ガスを導入する混合ガス導入手段（２）
と、 （Ｃ）前記反応室内に電子サイクロトロン共鳴プラズマ
を発生させるECRプラズマ供給手段（９、10、11、12）
と、 （Ｄ）基材（３）にほう素を蒸着しながら該基材にバイ
アス電圧を印加するバイアス電圧印加手段（８）と、 （Ｅ）ヒーター（６）を内蔵する回転可能な基材ホルダ
ー（４）を具備し、 （Ｆ）前記基材ホルダー（４）は、プラズマ発生室
（９）に対向するように、反応室（１）の上部に設置す
るとともに、マッチングボックス（７）を介して高周波
電源（８）に接続し、 （Ｇ）蒸発源（13）、基材ホルダー（４）の下部に設置
することを特徴とする立方晶窒化ほう素膜の製造装置。1. A substrate (3) and a boron evaporation source (13)
And (B) a mixed gas introducing means (2) for introducing a mixed gas of nitrogen or a compound containing nitrogen, a rare gas, and the like into the reaction chamber (1).
(C) ECR plasma supply means (9, 10, 11, 12) for generating electron cyclotron resonance plasma in the reaction chamber
(D) a bias voltage applying means (8) for applying a bias voltage to the substrate while depositing boron on the substrate (3); and (E) a rotatable substrate incorporating a heater (6). (F) The substrate holder (4) is installed above the reaction chamber (1) so as to face the plasma generation chamber (9), and a matching box (7) is provided. (G) an apparatus for producing a cubic boron nitride film, wherein the apparatus is connected to a high-frequency power supply (8) via a power source (8), and is installed below the evaporation source (13) and the substrate holder (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63264108A JP2617539B2 (en) | 1988-10-21 | 1988-09-21 | Equipment for producing cubic boron nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63264108A JP2617539B2 (en) | 1988-10-21 | 1988-09-21 | Equipment for producing cubic boron nitride film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02111882A JPH02111882A (en) | 1990-04-24 |
| JP2617539B2 true JP2617539B2 (en) | 1997-06-04 |
Family
ID=17398615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63264108A Expired - Fee Related JP2617539B2 (en) | 1988-10-21 | 1988-09-21 | Equipment for producing cubic boron nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2617539B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07305173A (en) * | 1994-03-17 | 1995-11-21 | Shin Etsu Chem Co Ltd | Method and apparatus for manufacturing object having ultra-hard carbon coating |
| JP6110106B2 (en) * | 2012-11-13 | 2017-04-05 | Ｊｓｗアフティ株式会社 | Thin film forming equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6389661A (en) * | 1986-10-02 | 1988-04-20 | Nec Corp | Apparatus for forming thin film |
| JPS6395200A (en) * | 1986-10-09 | 1988-04-26 | Sumitomo Electric Ind Ltd | Method for manufacturing hard boron nitride film |
-
1988
- 1988-09-21 JP JP63264108A patent/JP2617539B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02111882A (en) | 1990-04-24 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |