JP3343178B2 - Fine processing method and fine processing device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention irradiates an object to be processed by passing an energy beam generated by an energy beam source through a plurality of beam transmission holes of the same predetermined shape regularly formed in a mask surface. The present invention relates to three-dimensional fine processing for processing a specific region of a workpiece to a depth or a height corresponding to the irradiation amount of an energy beam. In particular, the minimum dimension of the shape processed on the workpiece is
0.1 nm to 10 nm, or 10 nm to 100 n
m or k is suitable for processing on the order of nm (nanometer) of about 100 nm to 10 μm.

Therefore, a workpiece, or a workpiece manufactured by further transferring from a workpiece, can be applied only to the fabrication of quantum effect devices and various devices for micro optics that require a size on the order of nm. For example, it can also be used for a contact mechanism such as a bearing of a magneto-optical disk reading device or a precision rotating device, or a fluid seal mechanism such as a labyrinth seal, which produces effects such as reduction of frictional resistance and conductance. .

[0003]

2. Description of the Related Art Conventionally, as a method of processing a plurality of patterns of an arbitrary shape on a substrate surface in the order of nm,
2. Description of the Related Art A photolithography technique used in a semiconductor process is known. FIG. 42 shows a flowchart of a semiconductor substrate processing method using a photolithography technique. In the first step (A), a resist material 2 is coated on the surface of the processing substrate 1. Subsequently, in the second step (B), the photomask 3 in which the transmission holes of a predetermined pattern are formed is disposed to face the resist material 2 while slightly floating from the surface of the resist material 2, and the photomask 3 is disposed through the transmission holes 3 a of the mask pattern. The surface of the resist material 2 is irradiated with ultraviolet rays 4. As a result, the same pattern as the transmission holes 3a formed in the photomask is transferred to the resist material 2a. Next, in a third step (c), the resist material 2 is developed, and the portion of the resist material 2a irradiated with ultraviolet rays through the transmission holes 3a is removed. further,
In the fourth step (D), anisotropic etching is performed on a portion of the processing substrate 1 where there is no resist material using ions or radical species in the plasma to form holes. Finally, the fifth
In the step (E), the resist material 2 is completely removed, and the processing on the substrate is completed.

In this manner, holes having the same pattern as the transmission holes of the photomask are formed on the surface of the processed substrate by the substrate processing including the first (A) to fifth (E) steps. Next, in order to form holes having different depths on the processing substrate, a photolithography process of substrate processing in the second stage is started. That is, the surface of the processed substrate having a hole formed in the surface is coated with the resist material 2 again, the unprocessed portion is covered with a photomask having a different pattern from the previous time, and the portion not covered with the photomask is used as the previous time. The same processing is performed. In this case, the processing depth can be adjusted by controlling the processing time, and by repeatedly performing such several stages of substrate processing, a semiconductor device having holes of different depths formed in the processed substrate is completed.

[0005]

However, the processing method using the conventional photolithography technique has the following problems. It is impossible to process the surface shape into an arbitrary three-dimensional curved surface shape by the single photolithography process described above. If a photolithography technique is used, a plurality of masks are required, and the number of photolithography steps to be repeated increases. In particular, in the photolithography technology, the resist process is performed in the air and the etching process is performed in a vacuum. Therefore, each time the resist is reciprocated, vacuum evacuation and leakage must be repeated, which takes time. Further, in principle, the surface has only a step-like shape approximating a curved surface, and a completely arbitrary smooth three-dimensional surface shape cannot be obtained. In addition, it is difficult to uniformly apply a resist material to a workpiece whose surface is originally a curved surface having a large difference in elevation, and even if it is possible,
Cannot attach mask. Therefore, in order to form a fine pattern, an exposure apparatus using a reduction lens is required. However, since the depth of focus is small, the focus of the mask pattern cannot be adjusted over the entire surface of the substrate. For this reason, in the repetition of the photolithography process, it is practically impossible to form an arbitrary three-dimensional curved surface on the order of nm.

[0006] The present invention has been made in view of the above-mentioned point, and it is possible to accurately control the processing depth or height on the order of nm, and as a result, it is possible to obtain a smooth and arbitrary processed surface shape as designed. Can be made, and at the same time, many shapes,
It is an object to provide a fine processing method and a fine processing apparatus that can be manufactured.

[0007]

According to the present invention, there is provided a microfabrication method comprising:
By passing through a beam transmission hole of a predetermined shape pattern opened in the mask surface and irradiating the workpiece, periodically rotate the relative angular relationship between the energy beam source and the workpiece, or By periodically translating the relative translational positional relationship between the mask and the workpiece, a specific region of the workpiece is processed according to the irradiation amount of the energy beam.

[0008] Before Symbol mask plane, have a beam transmission aperture of a large number of the same place constant shape pattern opened regularly
You.

[0009] as a pre-Symbol energy beam, fast atom beam, ion beam, electron beam, laser, radiation, X-rays,
Or radical beam like Ru used.

The workpiece may be a semiconductor material such as silicon or silicon dioxide, a quantum device material such as gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, a structural material such as aluminum or stainless steel, tungsten, titanium or tungsten. Carbide, boron nitride,
Preferably, it is any one of difficult-to-cut materials such as titanium nitride and ceramics or a high-hardness material, plastic, polyimide, glass, quartz glass, optical glass, ruby, sapphire, magnesium fluoride, zinc selenium, and zinc tellurium. .

A plurality of the masks are arranged so as to overlap in the direction of the energy beam axis, and a relative positional relationship with respect to the energy beam axis is fixed to a fixed mask fixed on the energy beam axis. A movable mask that is variable, said energy beam comprising:
A beam transmission hole bored in the fixed mask, may be only those which have passed through the beam transmission hole bored in the movable mask is irradiated on the workpiece.

Further, during processing in may be replacing the one of the mask.

[0013] The relative rotational movement or of the workpiece and the energy beam source, the said mask relative translational position movement of the workpiece is preferably a cyclic motion with a speed change.

Further, the said mask relative translational position movement of the workpiece, the constant radius or radius may be located at a variable horizontal circular motion.

The relative translation between the mask and the workpiece may be a linear reciprocating motion .
No.

The relative translational movement between the mask and the workpiece is such that the trajectory draws a square .
You may do it .

The minimum size of the beam transmitting hole shape of the mask or the shape processed into the workpiece is 0.1.
It is preferably from 10 nm to 10 nm.

The minimum size of the beam transmitting hole shape of the mask or the shape processed into the workpiece is 10n.
It may be there at 100nm from m.

The minimum size of the beam transmitting hole shape of the mask or the shape processed into the workpiece is 100.
It may be from nm to 10 μm.

Further, the workpiece as a mold manufactured by the micromachining process, a transfer technique such as electroforming or injection molding, wherein the Ru can be fabricated transcripts workpiece and mirror image.

Further, the transcripts produced by the micro-machining method as the mold, by a transfer technique such as further electroforming or injection molding may be produced transcripts of the transcript and the mirror image.

The workpiece manufactured by the above method may have an optical or wavelength selecting effect .
No.

Further, the workpiece fabricated by the method, it may have a function as a quantum effect devices or field emitter elements.

Further, the workpiece fabricated by the method has a low friction surface and has the effect of reducing the conductance, the contact mechanism, or it has a function as a fluid sealing mechanism I can .

The micro-machining apparatus according to the present invention includes an energy beam source for emitting an energy beam and one or more beam transmitting holes having the same or different predetermined shape patterns.
A mask that transmits the energy beam through the beam transmission hole, a workpiece that is processed by being irradiated with the energy beam that has passed through the mask, and a relative translation positional relationship between the mask and the workpiece. It is characterized by comprising a translation mechanism that varies periodically, and control means for processing a specific area of the workpiece in accordance with the irradiation amount of the energy beam.

Further, the place of the translation mechanism, or together with, the energy beam the mask and Bei <br/> example Rukoto a rotating mechanism relative angular relationship periodically varying the workpiece against Is preferred .

When the shape of the workpiece after processing is set in advance, the irradiation time of the beam, the shape of the transmission hole of the mask, the relative translational position movement path and speed, the relative rotational movement path and speed, and the like are determined. It is further provided with a support device that can be analyzed by the workpiece and simulation
Preferred .

The translation position movement mechanism includes a coarse movement mechanism and a fine movement mechanism. The fine movement mechanism includes a piezoelectric element (piezo element), a magnetostrictive element, or an element driving mechanism utilizing thermal deformation. And the position movement control of the fine movement is 0.1 nm to 10 nm,
It is preferable to be movable in the range of nm to 100 nm, or 100 nm to 10 μm.

Further, an elastic hinge having a parallel plate structure or a cantilever structure, or a slide guide to which a preload is applied is used as a guide mechanism for restricting the movement direction of the fine movement mechanism portion of the translation position movement mechanism to one degree of freedom. using Ru can also.

The energy beam source, the mask, and the workpiece are connected to each other using a microscope such as an optical microscope, a scanning secondary electron microscope (SEM), or a laser microscope.
Rukoto comprising means to align in a vacuum is preferred.

[0031]

According to the present invention, the workpiece is irradiated with the energy beam through the beam transmitting hole formed in the mask, and at this time, the relative angular relationship between the energy beam source and the mask is obtained by the relative rotation. Alternatively, the relative translational positional relationship between the mask and the workpiece is periodically changed by the relative translation motion, and a specific region of the workpiece is processed to a depth or a height corresponding to the irradiation amount of the energy beam. For example, when etching a workpiece using a high-speed atomic beam having high linearity as an energy beam, a mask having a circular transmission hole and the workpiece are moved along a circular orbit in a plane perpendicular to the energy beam axis. By performing the described relative translational movement, a fine conical protrusion or a circular hole having a parabolic curved surface can be arbitrarily formed.

Since the relative translational position is moved on the order of nm, a processed surface such as a three-dimensional curved surface on the order of nm can be arbitrarily formed. In addition, since processing is performed using an energy beam such as a high-speed atomic beam, various insulators,
Fine three-dimensional processing can be performed on hard-to-cut metals and the like. Further, by providing a large number of regularly formed beam transmission holes of the same shape in the mask, a multi-lens such as a homogenizer or a lenticular having a large number of regularly arranged lenses on the order of nm can be easily manufactured. Furthermore, by performing plastic molding or the like using the workpiece manufactured by the microfabrication method of the present invention as a mold, it is possible to mass-produce a nanometer-order fine workpiece by transfer.

The minimum size is 0.1 nm to 10 nm.
Workpieces with a thickness of 10 nm to 100 nm
Workpieces with a thickness of 100 nm to
A 10 μm workpiece is suitable for a visible light lens or the like.

Further, since a fine groove or the like on the order of nm can be processed on an arbitrary curved surface, a fine groove is provided in a contact mechanism such as a magneto-optical disk reader or a high-precision bearing. It is possible to reduce the frictional resistance while reducing the distance between the contact surfaces. Similarly, the use of a labyrinth seal or the like provides a seal mechanism that has low frictional resistance and reduced fluid conductance.

[0035]

Embodiments of the present invention will be described below with reference to FIGS. In the drawings, the same reference numerals indicate the same or corresponding parts.

FIG. 1 shows an example of the structure of a microfabrication apparatus according to the present invention. A piezoelectric element is used as a translational position moving mechanism for making a mask and a workpiece relatively move, and a parallel plate structure is used as a moving guide mechanism. The following shows an example using the elastic hinge.

An energy beam source 12, a sample stage 26 on which the mask 13 and the workpiece 11 are mounted, and gonio stages 27 and 28 on which the sample stage 26 is mounted are arranged in a vacuum vessel (not shown). The energy beam source 12 applies an energy beam 14 such as a fast atom beam, an ion beam, an electron beam, a laser beam, a radiation, an X-ray, or a radical beam to the workpiece 11 through a transmission hole provided in the mask 13. Irradiate. The workpiece 11 is subjected to an etching process or a vapor phase growth process by irradiation with the energy beam 14.

The mask 13 is a piezoelectric element fine moving mechanism 2
Driven by 3, 24. In addition, in order to suppress the position movement by one piezoelectric element only in the direction of extension and contraction of the piezoelectric element, the movement of the piezoelectric element is restricted only in the direction in which the elastic hinge mechanism 25 using the parallel plate structure can be moved. Drives the mask 13 fixed to the mask holder. Fine moving mechanisms 23, 24 having such a configuration
Are arranged on a horizontal plane which is two orthogonal axes so that the mask 13 can translate in the horizontal direction.

By driving the piezoelectric element fine moving mechanisms 23 and 24 in a sine wave shape and a cosine wave shape, respectively, the mask 13 can be made to make a circular motion with a radius of, for example, about 10 nm. As a result, the translational position can be moved with a precision of the order of nm, so that a structure having a minimum dimension of the order of nm can be manufactured, and a device having a small size such as an element accompanied by a quantum effect can be manufactured.

The mechanism for moving the translational position of the mask may be a magnetostrictive element or an element driving mechanism utilizing thermal deformation. Alternatively, a cantilevered elastic hinge or a pre-loaded guide may be used for the guide mechanism that restricts the movement direction of the fine movement mechanism to one degree of freedom. Furthermore, the workpiece or the energy beam source may be driven by such a fine moving mechanism to conversely fix the mask.

The sample stage 26 is fixed on gonio stages 27 and 28 having two axes of α axis and β axis. By setting the motors 30 of the gonio stages 27 and 28, the sample stage 26 can arbitrarily move the angle of the mask 13 and the workpiece 11 with respect to the energy beam axis along the α axis and the β axis. .

The alignment between the workpiece and the mask is performed by using a microscope arranged in a vacuum vessel. The microscope is an optical microscope or a scanning secondary electron microscope (SE
M) or a laser microscope or the like is used. As the positioning mechanism, a stage moving mechanism or the like used in a normal semiconductor manufacturing apparatus or the like is used for coarse movement.

The trajectory of the translational movement of the mask by the fine moving mechanism is calculated by a simulation device attached to the device, and the mask is driven in the X and Y directions by the piezoelectric element driving mechanism based on the calculation result. When a processing curved surface of a workpiece is set in advance, the supporting device attached to the device analyzes the shape of the transmission hole of the mask, the translational movement position path of the mask, the required irradiation amount of the beam, and the like by simulation.

The etching is performed, for example, by irradiating a high-speed atomic beam of silicon hexafluoride (SF ₆ ) when the material to be processed is quartz glass. In particular, fast atom beams do not contain electric charges, so it is easy to form a large-diameter, highly straightforward, high-density energy beam,
Ideal for fine processing of insulators. The workpiece can be a metal, a semiconductor, or an insulator, and may be combined with an appropriate source gas depending on the type of the energy beam to be applied. As the energy beam, a high-speed atomic beam, an ion beam, an electron beam, a laser, a radiation, an X-ray, or a radical beam is used.
Examples of the workpiece material include semiconductor materials such as silicon and silicon dioxide, quantum element materials such as gallium arsenide, aluminum gallium arsenide, and indium gallium arsenide, structural materials such as aluminum and stainless steel, tungsten, titanium, and tungsten carbide. Difficult-to-cut or hard materials such as boron nitride, titanium nitride, ceramics, plastic, polyimide, glass, quartz glass,
Optical materials such as optical glass, ruby, sapphire, magnesium fluoride, zinc selenium, and zinc tellurium are used.

In the microfabrication method according to the first embodiment of the present invention shown in FIG. 2, the surface of a plate-shaped workpiece 11 made of a metal material or a glass material is etched to form a large number of nm-shaped cones. This is for performing fine processing for forming needle-like projections. The energy beam is a beam having a uniform density irradiated from the energy beam source 12, and a high-speed linear atom beam is irradiated downward. The workpiece 11 is disposed coaxially with a beam axis passing through the center of the spot of the energy beam irradiated in a circular spot shape, and is fixed. A mask 13 is interposed between the energy beam source 12 and the workpiece 11 for periodically variably controlling the transmission hole of the energy beam applied to the workpiece. By moving the large number of circular beam transmitting holes 15 which are circularly moved in translation, the beam irradiation amount to a specific region of the workpiece is controlled.

In this embodiment, the mask is a nickel foil having a thickness of 10 μm, and the transmission holes are patterned by an electroforming technique. The shape of the transmission hole is a circle having a diameter of 10 μm,
They are arranged in a grid at a pitch of 25 μm. This mask is made to perform a horizontal constant-velocity circular motion parallel to the workpiece and at a slight interval. The orbital radius of this horizontal circular motion is
An example is 6 μm.

A radius r ₁ larger than the radius r ₀ of the circle of the circular hole 15 which is the beam transmitting hole of the mask 13 shown in FIG.
Is performed to perform a translational position movement that draws a circular orbit around the point C. Thereby, the irradiation amount of the energy beam per unit time is distributed in some places. FIG. 3B shows the trajectory of the circular motion of the transmission hole 15. Center point C of translation circular motion
The irradiation amount is the largest at a position slightly away from, and the irradiation amount decreases as the distance increases in the radial direction. At the center point C, no beam is irradiated. The processing depth of the workpiece is proportional to the beam irradiation amount. Therefore, as shown in FIG. 3 (C), the workpiece 11 is formed with a recess 16 having an elongated needle-like projection at the center from one transmission hole 15. Since a large number of transmission holes 15 are regularly arranged in the mask 13, as a result, the workpiece 1 in which a large number of recesses each having a needle-shaped projection as a center are regularly arranged.
1 is obtained.

Further, the height of the needle-like projection is reduced by isotropically etching the structure shown in FIG. 3C, and a concave mirror having a parabolic surface around the needle-like projection is manufactured. Can be. By performing isotropic etching on the concave portion 16 having a needle-like protrusion in the central portion shown in FIG.
A shape in which the height of the needle-like projection is reduced as shown in FIG. That is, the height of the protrusion can be arbitrarily changed according to the etching time. This concave shape is approximated to a quadratic curved surface, that is, a parabolic envelope curved surface, and isotropic etching is performed so that the focal point and the tip of the projection coincide. By further promoting the isotropic etching, FIG.
As shown in (C), a concave mirror approximating a parabolic curved surface without protrusions can also be formed.

By setting the height of the projection to the focal point of the concave mirror as shown in FIG. 4D and placing a light source on the back side of this element, the minute projection functions as a waveguide.
Light is radiated in all directions from the tip of the microprojection, and this light is reflected by a parabolic curved surface and is radiated as light having directivity. With this element, light emitted in a random direction from a surface emitting light source such as an EL can be converted into light having directivity.

In the first embodiment, the radius of the circular orbit of the translational motion of the mask is fixed. However, the radius of the circular orbit of the mask can be changed with the processing time. In the micromachining method of the second embodiment shown in FIG. 5, if the mask 13 and the workpiece 11 are fixed on the axis of the energy beam, the workpiece 11 has the shape of the transmission hole 15 of the mask. A circular hole with a straight cross-sectional shape with the same shape as should open. Further, if the mask and the workpiece are caused to perform a translational circular motion of a certain radius, the workpiece is formed with a hole having a radius of an envelope shape drawn by the transmission hole of the mask. Since the shape of the mask transmission hole 15 is circular, the hole is opened in a circle having a radius larger than the circle of the mask transmission hole. For example, the shape of the mask transmission hole is 10 μm in diameter.
Assuming a circle of m, a hole having a diameter of 10 μm is formed in the workpiece while the mask is kept fixed. When a circular motion is made at a constant velocity around a position eccentric by 6 μm from the center of the hole of the mask, a donut-shaped hole having a diameter of 22 μm is formed. Therefore, by setting the orbital radius of the translational circular motion drawn by the transmission hole of the mask to a certain value at first, and gradually decreasing it with the progress of the etching process,
The workpiece 11 having the opening 16 having a parabolic cross section as shown in FIG. 6 can be manufactured.

FIG. 7 shows a fine processing method according to a third embodiment of the present invention, which is an example of processing into a concave lens shape. As shown in FIG. 8A, the orbit radius r ₁ of the horizontal circular motion of the mask is made smaller than the radius r ₀ of the circle of the transmission hole 15. Then, the center position of the translational circular motion is located at a position relatively close to the center position of the transmission hole of the mask. And
By performing gradually reduced while etching the radius r ₁ of the translational circular motion, it is possible to manufacture a concave lens shape as shown in FIG. 8 (B).

This workpiece functions as a multi-reflection lens array. The size of the transmission hole 15 of the mask is set to nm
By setting the order, a multi-reflection lens array having a diameter on the order of nm can be manufactured. Note that n
Since a mask having an opening of the order of m is planar processing, it can be manufactured by a photolithography technique, a processing technique using a focused ion beam, or the like. If the size of the lens is made smaller than the wavelength of light, wavelengths beyond that will be scattered and become wavelength selective. The wavelength selectivity is determined by the fact that in a micro-convex lens array in which a large number of hemispherical convex lenses are arranged in a lattice, if the diameter of one lens is smaller than that wavelength, light of longer wavelength is scattered. Is what happens. For example, 500n
In a micro convex lens array in which a large number of convex lenses having a diameter of m are arranged, only light of blue or less is transmitted.

FIG. 9 shows a fine processing method according to a fourth embodiment of the present invention, in which the orbital radius of the horizontal circular motion of the mask is made sufficiently larger than the radius of the transmission hole 15 of the mask.
For example, in the case of this embodiment, the radius of the circle of the transmission hole of the mask 15 is 5 μm, and the maximum orbit radius of the horizontal circular motion is 50 μm. In this case, the energy beam that has passed through the mask transmission hole just like drawing with a brush is used to etch the workpiece in a concentric ring shape. By gradually changing the orbit radius of the horizontal translation circular orbit of the mask and changing the changing speed of the radius, the etching depth of the workpiece can be changed according to the beam irradiation amount at that radius. It can be changed continuously.

As shown in FIG. 9, fine circular beam transmitting holes 15 are arranged at relatively regular intervals in the mask 13 at regular intervals. When the mask 13 makes a translational circular motion having a fixed radius, the workpiece 11
Is processed as shown in the above-described embodiments. Therefore, as shown in FIG. 10, the orbital radius of the translational circular motion drawn by the mask is gradually and continuously changed, and further, the processing depth of the workpiece is continuously changed by changing the changing speed of the radius. I can do it. By appropriately controlling the orbital radius and speed of the translational circular motion of the mask 13, for example, a cross-sectional shape 16 as shown in FIG. 11 can be produced.
This is a Fresnel lens, which has the function of condensing light. In this way, in the microfabrication method shown in FIG. 9, the mask 13 has a multi-Fresnel lens array having a longitudinal sectional shape shown in FIG. The workpiece 11 is obtained.

In the fifth embodiment of the present invention shown in FIG. 12, a fixed mask 13A fixed on a beam axis together with a workpiece together with movable masks 13B and 13C movable in translational position.
Is provided. According to this apparatus, the energy beam that has passed through the transmission holes 15 of the movable masks 13B and 13C must also pass through the transmission holes 15A of the fixed mask 13A in the processing as described in the above embodiments.
Therefore, when processing is performed while moving the movable masks 13B and 13C in the same manner as in the above-described embodiments, the outer diameter of the lens to be processed into the workpiece becomes the same as the size of the circular hole 15A of the fixed mask 13A, and Edge becomes sharp. Thereby, as an example, a multi-convex lens array having a vertical cross-sectional shape shown in FIG. 14 is obtained.

This embodiment is for manufacturing a micro convex lens array. The energy beam source 12 is a laser. The mask is composed of one fixed mask 13A and two movable masks 13B and 13C. This mask is obtained by pattern-depositing chromium on a quartz glass plate. The first mask 13A has a circular transmission hole (diameter of 10).
μm) are arranged in a grid at a pitch of 20 μm. Conversely, in the second mask 13B and the third mask 13C, as shown in FIG. 13 (A), shielding portions made of circular chrome-like clothes having a diameter of 10 μm are arranged in a grid at a pitch of 20 μm. . That is, laser beams can pass through portions of the masks 13B and 13C other than the circular shape. Of these three masks, the first mask 13A is fixed,
As shown in FIG. 13B, the masks 13B and 13C perform a horizontal circular motion with a phase shift of 180 °. Thereby, the shielding portions 15B and 15C of the masks 13B and 13C and the mask 1
The ginkgo leaf-shaped portion Y formed by the transmission portion 15A of 3A rotates as shown in the figure by the translation circular motion. Therefore, it can be processed into a convex lens shape as shown in FIG.

FIG. 15 shows a sixth embodiment of the present invention, in which a series of operations during machining are replaced with a mask having a different mask shape in the middle. That is, when the processing of the convex lens shown in FIG. 15A manufactured in the manner of the above embodiment is completed, the mask is replaced with the one shown in FIG. 15B. The mask has a circular hole having a diameter different from that of the transmission hole 21 of the fixed mask used for forming the convex lens shown in FIG. By irradiating an energy beam using a mask (B) having a circular hole smaller than the diameter of the convex lens (A), only the portion of the mask (B) where the circular hole is opened is processed, and (C) The sectional shape shown in FIG. By repeating the same processing,
Using the mask shown in (D), a lens having the shape shown in (E) can be manufactured. According to this method, an extremely accurate Fresnel lens can be manufactured.

FIG. 16 shows a seventh embodiment of the present invention. In this embodiment, three masks are used, the mask 13A is fixed, and the masks 13B and 13C are translated in the same manner as in the previous embodiment. In this embodiment, a high-speed atomic beam is used as the energy beam source 12. In this embodiment, the metal foil masks 13A, 13B, and 13C having the beam transmitting holes as the penetrating portions are used. The fixed mask 13A has a circular transmission hole 15A. 2nd and 3rd
The first masks 13B and 13C are provided with iron array-shaped shielding portions 15B and 15C as shown in FIG. 17, respectively. Also in this embodiment, the ginkgo leaves Y formed by the shielding portions 15B and 15C of the masks 13B and 13C and the through holes 15A of the mask 13A are formed by the masks 13B and 13C.
The convex lens array as shown in FIG. 18 is formed. In this embodiment, the masks 13B and 13B
By moving C by the length A of the iron array, the ginkgo leaf portion Y formed by the lower iron array-shaped shielding portions 15B and 15C and the transmission hole 15A is made to make a half turn. That is, FIG.
The exercise | movement which combined the circular motion of half circumference, and the linear motion shown by the arrow of 6 is performed. This movement is repeated while irradiating the workpiece 11 with a high-speed atomic beam. As described above, the movement of the masks 13B and 13C is slightly complicated, but can be processed with high precision.

FIG. 19 shows an eighth embodiment of the present invention. The present invention relates to an example in which a mask is moved in a translational position linearly. In FIG. 19, the mask 13 has fine slit-shaped beam transmitting holes 15 opened at regular intervals. As an example, the size of the slit is 1
It is 0 nm × 100 nm and the interval is 10 nm. The energy beam emitted from the energy beam source 12 is
The workpiece 11 is irradiated through the beam transmission hole 15. The mask 13 is made of, for example, 10 n
Stepping is performed at regular intervals at m intervals. FIG. 20A shows the relationship between the movement amount x and the time t. In addition, the energy beam etching amount during this fixed time is 1
By appropriately controlling the beam amount or the like so as to be 0 nm, a fine structure with a pitch 2a having a sectional shape shown in FIG. 20 is manufactured.

This structure functions as a sinusoidal diffraction grating by being made of a material that transmits light. For example, in a CCD video camera, by arranging it in front of a CCD (group imaging device), it can be used as a low-pass filter for removing a similar signal due to an image having a high spatial frequency.

When a linear motion is performed in a sinusoidal manner on the time axis shown in FIG. 21 using the mask 13 having a similar slit, a periodic structure having a sharp tip shown in FIG. 22 is obtained. The resulting 10 nm pitch step-like structure is smaller than the wave of the electrons, so that the electrons are trapped on one of the steps and cannot move to another step. With this effect, it can function as a quantum effect element.

A mask 13 having a similar slit
When the translational position movement is performed linearly on the time axis shown in FIG. 23 using, the trapezoidal cross-sectional shape shown in FIG. 24 is obtained.
By setting the pitch to about the wavelength of light, a trapezoidal diffraction grating can be obtained, for example, high-order diffracted light of incident laser light can be blocked. Therefore, for example, by placing it in front of a laser beam pickup for a CD player,
It can be used for high-order diffracted light removal filters and the like.

FIGS. 25 to 27 show a tenth embodiment of the present invention. Also in this embodiment, the relative translation between the mask and the workpiece is moved linearly and at a variable speed. . That is, the mask 13 has the beam transmission holes 15 as shown in FIG. This mask 13
A translational linear motion is performed in the horizontal direction (the direction of the arrow) perpendicular to the linear transmission hole. At this time, when the translational position is moved at a constant speed, a curved surface in a semicylindrical shape as shown in FIG. 26 is formed. Further, the speed of this linear motion gradually accelerates, gradually decelerates again, stops, and then periodically repeats a sinusoidal movement in the opposite direction, which performs the same operation. By performing such a movement, a spatial sinusoidal distribution is generated in the beam irradiation amount per unit time hitting the workpiece,
It is processed into a convex lens shape having a rectangular base shown in FIG.

The structure shown in FIG. 26 functions as a multi-cylindrical lens by using a transparent material. This lens is suitable for use as a lenticular because it can squeeze incident light in a straight line,
For example, it can be used in place of a rotating mirror for high-speed frame photography.

Incidentally, after processing into the semi-cylindrical shape shown in FIG. 26, the mask is then rotated by 90 ° and linear translation is performed at a constant speed, whereby a spherical lens as shown in FIG. 34 can be produced. The array of ultra-fine lenses of nm order arranged on this plane has the following functions. That is, it has a function as a homogenizer in which an incident laser beam is uniformly dispersed and then converted into a parallel laser beam again by a lens. Since a greater number of minute lenses can be arranged than a conventional homogenizer, the uniformity of the beam intensity is significantly improved.

FIG. 28 shows an eleventh embodiment of the present invention. In this embodiment, the circular transmission holes 15 of the mask 13 are arranged in a checkered pattern. By performing a linear translational movement of the mask 13 at a constant speed, it is possible to perform an etching process with a sectional shape shown in FIG. In order to continuously form the arc-shaped concave portions in this manner, the mask 13 is used.
Although circular transmission holes may be continuously arranged in a straight line, masks can be easily manufactured by arranging them in a checkered pattern as in this embodiment. In particular, when the pitch of the groove portions is fine on the order of nm, it is possible to form a fine vertically long concave lens array much more easily than arranging the transmission holes 15 in the mask 13 linearly.

FIG. 30 shows a twelfth embodiment of the present invention.
The mask 13 has circular transmission holes 15 arranged in a checkered pattern in a matrix. This mask 13 is
As shown in Fig. 32, by performing linear translational movement at a constant speed so that the movement draws a square shape, a fine spherical concave lens array as shown in Fig. 32 is obtained.

FIG. 33 shows a mask for forming a microspherical convex lens array. In contrast to the above-described embodiment, a circular portion serves as a shielding portion, and a cross-shaped transmission hole 15 is formed between the shielding portions. A large number of transmission hole portions 15 are arranged in a grid on a plane. Then, the mask 13 is moved at a constant velocity linear position so as to draw a square locus similar to that shown in FIG. 31 to obtain a microspherical convex lens array as shown in FIG. This convex lens array is suitable for applications such as a homogenizer that converts a laser beam having a Gaussian distribution into a laser beam having a uniform intensity by manufacturing the pitch to be about the wavelength of light.

FIG. 35 shows a thirteenth embodiment of the present invention.
As shown in FIG. 1, the mask and the workpiece are slightly fixed and fixed to the sample table in parallel. On the other hand, although the energy beam source 12 is fixed, the mask 13 and the workpiece 11 mounted on the sample stage are moved to the gonio stages 27 and 2.
By means of 8, a swinging (rotating) movement is made in the direction of the arrow of the arc. Thereby, a micro concave lens array having a dish shape as shown in FIG. 36 can be manufactured. Here, the oscillating motion starts with the oscillating motion oscillating around the α axis, and the oscillating axis is gradually rotated around the energy beam axis. The movement of these goniometers can be easily performed by a computer-controlled goniometer drive.

FIG. 37 shows a fourteenth embodiment of the present invention. In the present embodiment, the sample stage is rocked (rotated) by the gonio stages 27 and 28 in the same cycle of the α axis and the β axis with respect to the energy beam axis, and on the time axis in a relationship of a sine wave and a cosine wave. The surface of the sample stage is tilted by a certain angle, and appears to rotate around the beam axis.
A microscopic microprojection array as shown in FIG. 38 can be manufactured by rotating the mask in the direction of the arrow in FIG. 33 and the sample surface around the center of the mask as the center of rotation. If electrodes are formed in this element, it functions as a multi-field emitter array.

FIG. 39 shows a sixteenth embodiment of the present invention.
In the present embodiment, the surface of the sample stage is tilted with respect to the energy beam axis by the gonio stage in the same manner as described above, and the surface of the sample stage is apparently rotated by the gonio stage as shown by white arrows. At the same time, a linear translational motion is performed as indicated by the black arrow. As a result, a curved opening in which the upper surface and the lower surface of the workpiece 13 are open as shown in FIG. 36 is obtained. This can be used as a ferrule for connecting optical fibers. Since this ferrule has high precision and a thick tip, an optical fiber can be easily inserted.

In each of the above-mentioned embodiments, the finished product which was completed was obtained by directly processing the above-mentioned material with an energy beam. However, depending on the workpiece, it takes too much time and cost to process, or the yield is poor, or the material that performs the function cannot be etched, or the shape related to the desired shape can be easily manufactured. , Cannot be made directly. Such problems may occur. Therefore, a case will be described in which a workpiece once processed by an energy beam is used as a mold to produce a duplicate product by transfer.

FIG. 41 shows the principle. FIG.
1 (a) is a workpiece 11 processed by an energy beam, which is used as a mold to produce a mirror image-related processed product 25 by the injection molding or electroforming process of (b). In the step (c), the processed product 25 is removed, and the processed product 25 related to the mirror image is completed. If this fulfills the function, it may be used as it is as a product. However, if it is desired to produce a processed product having the shape shown in FIG. Injection molding or electroforming as
It is removed in the step (e) to obtain a processed product 26. This enables mass production of plastic molded articles and the like.

An example of manufacturing a mirror image-related processed product by electroforming will be described below. First, a gallium arsenide (GaAs) single crystal is used as a material to be processed, and a micro-convex mirror array is manufactured by high-speed atomic beam etching in a chlorine gas atmosphere according to the above-described various embodiments. Next, gold (Au) is sputtered on the micro convex mirror array to form a conductive layer. And it puts in a Ni-Co alloy bath and performs nickel plating (Ni electroforming). Then, by removing the plated portion, a micro concave mirror array having a gold (Au) surface on a nickel (Ni) substrate is manufactured.

In each embodiment of the present invention, the workpiece has a curved surface with a large difference in height, and even if the distance from the mask is sufficiently large, the surface can be processed. When the energy beam has high rectilinearity like a high-speed atomic beam, a sufficiently large space can be provided between the mask 13 and the workpiece 11. Therefore, for example, by arranging and processing the mask with respect to a workpiece having a bearing structure having a curved surface, a fine groove can be directly formed on the curved surface.

The curved shape having the fine grooves makes it possible to reduce the frictional force of the bearing portion. Grooves with extremely small dimensions on the order of nm compared to conventional grooves and their pitch can be achieved, so multi-stage grooves can be realized with a shorter pitch than before, and the clearance from the axis must be a minute distance on the order of nm. Becomes possible. Therefore, by using various contact mechanisms, for example, a read / write head of a magneto-optical disk,
Since the frictional force can be reduced and the clearance can be reduced, the storage density can be increased. Further, even in the case of a rotating shaft seal, by using the seal for a labyrinth seal or the like, it is possible to reduce the frictional force and the conductance. Further, by using the magnetic fluid sealing mechanism, it is possible to reduce the amount of leakage of the vapor of the magnetic fluid due to the multi-stage groove and the minute clearance.

In each of the above-described embodiments, it is preferable to use a high-speed atomic beam, an ion beam, an electron beam, a laser beam, radiation, an X-ray, a radial beam, or the like as an energy beam. It is not done.
Examples of the workpiece include semiconductor materials such as silicon and silicon dioxide, gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), and indium gallium arsenide (I).
quantum materials such as nGaAs), structural materials such as aluminum and stainless steel, tungsten, titanium, tungsten carbide (WC), boron nitride (BN),
Difficult-to-cut or hard materials such as titanium tetranitride (TiN ₄ ) and ceramics, plastic, polyimide, glass, quartz glass, optical glass, ruby, sapphire,
Processing of optical materials such as magnesium fluoride, zinc selenium (ZnSe), and zinc tellurium (ZnTe) is exemplified, but the processing is not limited thereto.

[0078]

According to the conventional method using a photoresist pattern manufacturing process using a photolithography technique, it is basically a two-dimensional fine processing, and it is difficult to process a three-dimensional arbitrary curved surface of 1 μm or less. Was. In the present invention, as described in detail above, by combining an energy beam and a mask, a large number of identical shapes on the order of nm can be simultaneously formed, and a three-dimensional arbitrary curved surface can be easily formed on the order of nm. Can be processed with Therefore, it is possible to manufacture a quantum effect element, an optical lens element, or the like having a structure or a function that has been conventionally difficult to manufacture. Furthermore, by providing fine grooves on the friction surface, the frictional force is reduced, so that magneto-optical disk heads, magnetic tape heads, rotation / thrust bearing mechanisms, fluid seal mechanisms, etc. have higher performance than before. A compact mechanism can be realized. The academic and industrial significance of the present invention is very large and significant.

[Brief description of the drawings]

FIG. 1 is an explanatory view of a microfabrication apparatus according to one embodiment of the present invention.

FIG. 2 is an explanatory diagram of a fine processing method according to a first embodiment of the present invention.

3A is an explanatory view showing the movement of a transmission hole due to a translational circular movement of a mask, FIG. 3B is an explanatory view showing a trajectory of a transmission hole due to a translational circular movement of a mask, and FIG. 3C is a longitudinal section of a workpiece. FIG.

FIG. 4 is an explanatory view of performing isotropic etching on a workpiece illustrated in FIG.

FIG. 5 is an explanatory diagram of a fine processing method according to a second embodiment of the present invention.

FIG. 6 is an explanatory view of a longitudinal section of a workpiece.

FIG. 7 is an explanatory view of a fine processing method according to a third embodiment of the present invention.

8A is an explanatory view showing the movement of a transmission hole, and FIG. 8B is an explanatory view of a vertical section of a workpiece.

FIG. 9 is an explanatory view of a fine processing method according to a fourth embodiment of the present invention.

FIG. 10 is an explanatory diagram showing movement of a transmission hole.

FIG. 11 is an explanatory view of a longitudinal section of a workpiece.

FIG. 12 is an explanatory diagram of a fine processing method according to a fifth embodiment of the present invention.

13A is an explanatory diagram showing a shape of a shielding portion of a mask, and FIG. 13B is an explanatory diagram showing a movement of a transmission hole due to a translational circular motion of the mask.

FIG. 14 is an explanatory view of a longitudinal section of a workpiece.

FIG. 15 is an explanatory diagram of a fine processing method according to a sixth embodiment of the present invention.

FIG. 16 is an explanatory diagram of a fine processing method according to a seventh embodiment of the present invention.

FIG. 17 is an explanatory diagram of a transmission hole and a shielding portion of a mask.

FIG. 18 is an explanatory view of a longitudinal section of a workpiece.

FIG. 19 is an explanatory diagram of a fine processing method according to an eighth embodiment of the present invention.

20A is an explanatory view showing the movement of a mask, and FIG. 20B is an explanatory view of a longitudinal section of a workpiece.

FIG. 21 is an explanatory view of another fine processing method of the eighth embodiment.

FIG. 22 is an explanatory view of a longitudinal section of a workpiece.

FIG. 23 is an explanatory view of still another fine processing method of the eighth embodiment.

FIG. 24 is an explanatory view of a longitudinal section of a workpiece.

FIG. 25 is an explanatory diagram of a fine processing method according to a tenth embodiment of the present invention.

FIG. 26 is a perspective view of a workpiece.

FIG. 27 is a perspective view of a workpiece.

FIG. 28 is an explanatory diagram of the fine processing method according to the eleventh embodiment of the present invention.

FIG. 29 is an explanatory view of a longitudinal section of a workpiece.

FIG. 30 is an explanatory view showing the shape of a transmission hole of a mask according to a twelfth embodiment of the present invention.

FIG. 31 is an explanatory diagram showing a locus of movement of a mask.

FIG. 32 is a perspective view of a workpiece.

FIG. 33 is an explanatory view showing the shape of a transmission hole of a mask.

FIG. 34 is a perspective view of a workpiece.

FIG. 35 is an explanatory view showing a shape of a transmission hole of a mask according to a thirteenth embodiment of the present invention.

FIG. 36 is an explanatory view of a longitudinal section of a workpiece.

FIG. 37 is an explanatory view showing a shape of a transmission hole of a mask according to a fourteenth embodiment of the present invention.

FIG. 38 is an explanatory view of a longitudinal section of a workpiece.

FIG. 39 is an explanatory view showing a shape of a transmission hole of a mask according to a fifteenth embodiment of the present invention.

FIG. 40 is an explanatory view of a longitudinal section of a workpiece.

FIG. 41 is an explanatory diagram of a method of performing mirror image transfer from a workpiece.

FIG. 42 is a flowchart of the steps of the photolithography technique.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Workpiece 12 Energy beam source 13 Mask 15 Transmission hole (shielding part) 16 Workpiece part

────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. ⁷ Identification code FI B23K 26/00 330 B23K 26/00 330 26/06 26/06 J 26/08 26/08 DB29C 33/38 B29C 33/38 45/00 45/00 C04B 41/91 C04B 41/91 E C23F 4/02 C23F 4/02 C30B 33/04 C30B 33/04 G21K 5/04 G21K 5/04 Z H01L 21/203 H01L 21/203 M 27 / 14 H05K 3/08 C H05K 3/08 D H01L 27/14 D (72) Inventor Takao Kato 4-2-1 Motofujisawa, Fujisawa-shi, Kanagawa Inside Ebara Research Institute Co., Ltd. (72) Inventor Yotaro Hatamura Tokyo 2-12-11 Kohinata, Bunkyo-ku, Tokyo (72) Inventor Masayuki Nakao 5-1 Shin-Matsudo, Matsudo-shi, Chiba Shin-Matsudo Central Park House C-908 (56) References JP-A-6-264272 (JP, A) Hei 3-44031 (JP, A) JP-A-60-186806 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/302 201 B01J 19/12 B23K 15/08 B23K 17/00 B23K 26/06 B23K 26/08 B29C 33/38 B29C 45/00 C04B 41/91 C23F 4/02 C30B 33/04 G21K 5/04 H01L 21/203 H01L 27/14 H05K 3/08

Claims (10)

(57) [Claims] An energy beam emitted from an energy beam source is passed through a beam transmission hole having a predetermined shape formed in a mask surface, and is irradiated on a workpiece to irradiate the workpiece.
When processing a workpiece, a two-dimensional flat surface is used as the mask.
A large number of identical patterns of beam transmission
Arrange the holes to compare the positional relationship between the mask and the workpiece.
Microfabrication wherein the Turkey is translated pairs manner. 2. The method according to claim 1, wherein the relative translation is relatively square.
Performs a linear translational movement at a constant speed to draw a shape trajectory.
Fine processing method according to claim 1, wherein the cormorants. 3. The method according to claim 2, wherein the relative translation is relatively circular.
A translatory position movement that draws a road.
The microfabrication method according to claim 1. 4. The method according to claim 1, wherein the radius of the circular orbit is changed with the processing time.
4. The microfabrication method according to claim 3, wherein the method is performed. 5. A relative translation between said mask and a workpiece.
Movement using piezoelectric element, magnetostrictive element or heat deformation element
2. The method according to claim 1, wherein the method is performed.
Law. 6. A energy beam source for emitting an energy beam, a mask disposed a beam transmission hole of a number of identical <br/> pattern provided regularly in a two-dimensional plane, the mass
A workpiece to be processed by being irradiated with the energy beam transmitted through the beam transmission hole of the mask; and a translation mechanism for changing a relative positional relationship between the mask and the workpiece. Micro processing equipment. 7. The apparatus according to claim 7, wherein the translation mechanism moves the mask with the mask.
Linear at constant velocity so that the workpiece draws a relatively square trajectory
7. The translational movement according to claim 6, wherein
Micro processing equipment . 8. The apparatus according to claim 7, wherein the translation mechanism is configured to
Perform translational position movement so that the workpiece follows a relatively circular orbit
7. The microfabrication apparatus according to claim 6, wherein: 9. The method according to claim 1, wherein the radius of the circular orbit is changed with the machining time.
The microfabrication apparatus according to claim 8, wherein the processing is performed. 10. The apparatus according to claim 10, wherein the translation mechanism comprises a mask and a workpiece.
The relative position movement with respect to the object is
7. The method according to claim 6, wherein the step is performed by using a heat deformation element.
The microfabrication device as described.