JP3374828B2 - Plasma processing method and apparatus - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and apparatus such as dry etching, sputtering, and plasma CVD used for manufacturing electronic devices such as semiconductors and micromachines, and more particularly to a VHF band or UHF.
The present invention relates to a plasma processing method and apparatus using plasma excited by using high frequency power of a band.

[0002]

2. Description of the Related Art Japanese Unexamined Patent Publication No. 8-83696 describes that it is important to use high-density plasma in order to cope with the miniaturization of electronic devices such as semiconductors. High electron temperature and low electron temperature attract attention to low electron temperature plasma.

A gas with a strong negative polarity, such as Cl ₂ or SF ₆ ,
In other words, when the gas in which negative ions are easily generated is turned into plasma and the electron temperature is about 3 eV or less, a larger amount of negative ions are generated as compared with the case where the electron temperature is high. By utilizing this phenomenon, it is possible to prevent etching shape abnormalities called notches caused by the accumulation of positive charges at the bottom of the fine pattern due to excessive incidence of positive ions, and to etch extremely fine patterns with high accuracy. It can be carried out.

Further, CxFy and CxHy generally used when etching an insulating film such as a silicon oxide film.
When a gas containing carbon and fluorine such as Fz (x, y, and z is a natural number) is turned into plasma, when the electron temperature is about 3 eV or less, dissociation of the gas is suppressed as compared with the case where the electron temperature is high. Generation of atoms and F radicals is suppressed. Since F atoms, F radicals, and the like have a high rate of etching silicon, a lower electron temperature enables etching of an insulating film having a higher etching selection ratio with respect to silicon.

Further, when the electron temperature becomes 3 eV or less, the ion temperature and the plasma potential also decrease, so that the plasma CV
Ion damage to the substrate at D can be reduced.

At present, the VHF band or the UHF band is drawing attention as a technique capable of generating plasma having a low electron temperature.
It is a plasma source that uses the high frequency power of the band.

FIG. 5 is a sectional view of a plate antenna type plasma processing apparatus that we have already proposed. In FIG. 5, a predetermined gas is introduced from the gas supply device 2 into the vacuum container 1 and exhausted by the pump 3 as an exhaust device, while the inside of the vacuum container 1 is kept at a predetermined pressure by the antenna high frequency power source 4. When high frequency power of 100 MHz is supplied between the antenna 5 and the vacuum container 1 and is supplied to the antenna 5 through the through hole 7 provided in the dielectric plate 6 having substantially the same external dimensions as the antenna 5, the vacuum container is Plasma is generated in the substrate 1, and the substrate 9 placed on the substrate electrode 8 can be subjected to plasma treatment such as etching, deposition, and surface modification. At this time, by supplying high frequency power to the substrate electrode 8 from the high frequency power source 10 for substrate electrode, the ion energy reaching the substrate 9 can be controlled. The surface of the antenna 5 is covered with an insulating cover 11. Further, the groove-shaped space between the dielectric plate 6 and the dielectric ring 18 provided in the peripheral portion of the dielectric plate 6, and the antenna 5 and the conductor ring 1 provided in the peripheral portion of the antenna 5.
A plasma trap 20 including a groove-shaped space between the plasma trap 20 and the groove 9 is provided. With such a configuration, the electromagnetic wave radiated from the antenna 5 is strengthened in the plasma trap 20, and a hollow cathode discharge tends to occur in the low electron temperature plasma, so that the plasma trap 20 surrounded by the solid surface has a high intensity. It becomes easy to generate high density plasma (hollow cathode discharge). Therefore, in the vacuum chamber 1, the plasma density is highest in the plasma trap 20, and the plasma is transported to the vicinity of the substrate 9 by diffusion, so that a more uniform plasma can be obtained.

[0008]

However, in the conventional method shown in FIG. 5, it is necessary to increase the distance between the antenna 5 and the substrate electrode 8 in order to obtain plasma uniformity, and a high ion saturation current is required. To obtain the density, there is a problem that it is necessary to apply a very large high frequency power. For example, in chlorine gas plasma,
In order to obtain a uniformity of ± 10% or less within a diameter of 300 mm, the distance between the antenna 5 and the substrate electrode 8 should be 130 mm.
When chlorine gas is supplied into the vacuum container 1 and VHF power of 1000 W is applied to the antenna 5, the ion saturation current density in the vicinity of the substrate 9 is 1 Pa at 1 Pa.
It was ² mA / cm ² .

In view of the above problems of the prior art, the present invention provides a plasma processing method and apparatus which provide good uniformity and high ion saturation current density even when the distance between the antenna and the substrate is small. It is an object.

[0010]

According to a first aspect of the present invention, there is provided a plasma processing method, wherein a gas is supplied into a vacuum container, the inside of the vacuum container is evacuated, and the inside of the vacuum container is controlled to a predetermined pressure.
An antenna provided in the vacuum container facing the substrate placed on the substrate electrode in the vacuum container, and provided on a dielectric plate that is sandwiched between the antenna and the vacuum container and has a larger outer dimension than the antenna. By applying high-frequency power having a frequency of 50 MHz to 3 GHz through the through hole, plasma is generated in the vacuum container, and the antenna and the substrate power are supplied.
A plasma processing method for processing a substrate by setting a distance from the pole to about 80 mm, wherein the method is "a first conductor ring provided on the peripheral portion of the antenna and between the first conductor ring provided on the dielectric plate and the antenna. "A groove-shaped first plasma trap" and a "second conductor provided in the peripheral portion of the first conductor ring and provided in the dielectric plate , and having an inner diameter smaller than the outer shape of the dielectric plate". A groove-shaped second between the ring and the first conductor ring
Processing the substrate by means of a "plasma trap".

In the plasma processing method of the second invention of the present application, the inside of the vacuum container is evacuated while supplying the gas into the vacuum container, and the inside of the vacuum container is controlled to a predetermined pressure while being placed on the substrate electrode inside the vacuum container. An antenna provided inside the vacuum container facing the placed substrate, and a frequency is generated through a through hole provided in a dielectric plate that is sandwiched between the antenna and the vacuum container and that has the same external dimensions as the antenna. By applying high frequency power of 50 MHz to 3 GHz, plasma is generated in the vacuum container, and the distance between the antenna and the substrate electrode is set to 80.
set to about mm, a plasma processing method for processing a substrate, the peripheral portion of the dielectric plate dielectric ring is provided, mounted on the periphery of the "antenna and the dielectric
A groove-like first plasma trap "between the first conductor ring and the antenna provided in the ring, provided on the periphery of the" first conductive ring and disposed in said dielectric ring, and an inner diameter A groove-shaped second conductor ring between the first conductor ring and the second conductor ring whose outer diameter is smaller than the outer shape of the dielectric ring .
Processing the substrate by means of a "plasma trap".

In the plasma processing method of the first or second invention of the present application, it is preferable to provide a short pin that short-circuits the antenna and the vacuum container in order to bring about an isotropic electromagnetic field distribution in the antenna. .

Further, it is preferable that the surface of the antenna is covered with an insulating cover.

The plasma processing method of the first or second invention of the present application is an effective plasma processing method particularly when no DC magnetic field exists in the vacuum container.

The plasma processing apparatus of the third invention of the present application is a true
Supply gas to empty container and vacuum containerGas supply device
And exhaust the inside of the vacuum containerExhaust systemAnd the
Place the plateSubstrate electrodeAnd facing the substrate electrode, And before
The distance to the substrate electrode is about 80 mmAnte provided
Is sandwiched between the antenna, the antenna and the vacuum vessel, and
Provided on a dielectric plate that has a larger external dimension than the tenor and the dielectric plate.
Frequency of 50MHz to 3 to the antenna through the through hole
Supply high frequency power of GHzHigh frequency power supplyWith
It is a plasma processing device that is installed in the peripheral part of the antenna.
AndOn the dielectric plateThe first conductor ring and the
Groove with the antennaFirst ofPlasma trap "and" No.
1 Provided on the periphery of the conductor ring, andOn the dielectric plate
Is provided and has an inner diameterThe dielectric plateSmaller than the outline of
Groove shape between the second conductor ring and the first conductor ringSecond
"Plasma trap" is provided
It

The plasma processing apparatus of the fourth invention of the present application is a true
Supply gas to empty container and vacuum containerGas supply device
And exhaust the inside of the vacuum containerExhaust systemAnd the
Place the plateSubstrate electrodeAnd facing the substrate electrode, And before
The distance from the substrate electrode was set to about 80 mm.Ante
Is sandwiched between the antenna, the antenna and the vacuum vessel, and
Provided on the dielectric plate and the dielectric plate whose external dimensions are almost the same as the tenor.
Frequency of 50MHz to 3 to the antenna through the through hole
Supply high frequency power of GHzHigh frequency power supplyWith
It is a plasma processing device,The dielectric platePeripheral areaTo the dielectric
ringIs provided, "is it provided around the antenna?
OneIn the dielectric ringThe first conductor ring and the
Groove with the antennaFirst ofPlasma trap "and" No.
1 Provided on the periphery of the conductor ring, andThe dielectric
ToIs provided and has an inner diameterThe dielectric ringOutline of
Between the smaller second conductor ring and the first conductor ring
Groove shapeSecond"Plasma trap" is installed
Is characterized by.

In the plasma processing apparatus of the third or fourth invention of the present application, it is preferable to provide a short pin that short-circuits the antenna and the vacuum container.

Further, it is preferable that the surface of the antenna is covered with an insulating cover.

The plasma processing apparatus according to the third or fourth invention of the present application is an effective plasma processing apparatus particularly when the vacuum container is not provided with a coil or a permanent magnet for applying a DC magnetic field.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of the present invention will be described below with reference to FIG.

FIG. 1 shows a sectional view of the plasma processing apparatus used in the first embodiment of the present invention. In FIG.
While a predetermined gas is introduced from the gas supply device 2 into the vacuum container 1, the gas is exhausted by the pump 3 as an exhaust device, and while maintaining the vacuum container 1 at a predetermined pressure, the high frequency power source 4 for the antenna supplies 100 MHz high frequency power The antenna 5
When supplied to the antenna 5 through a through hole 7 provided in a dielectric plate 6 having a larger outer dimension than the antenna 5, the plasma is generated in the vacuum container 1, Plasma treatment such as etching, deposition, and surface modification can be performed on the substrate 9 placed on the substrate electrode 8. At this time, by supplying high frequency power to the substrate electrode 8 from the high frequency power source 10 for substrate electrode, the ion energy reaching the substrate 9 can be controlled. The surface of the antenna 5 is covered with an insulating cover 11.

In addition, "provided around the antenna 5,
Also, the first conductor ring 1 provided in close contact with the dielectric plate 6
A first plasma trap 13 formed of a groove-shaped space between the antenna 2 and the antenna 5, and "provided on the periphery of the first conductor ring 12 and in close contact with the dielectric plate 6, and
The second conductor ring 14 having an inner diameter smaller than the outer diameter of the dielectric plate 6.
And a second plasma trap 15 ″ including a groove-shaped space between the first plasma ring 15 and the first conductor ring 12.

In the plasma processing apparatus used in the first embodiment of the present invention shown in FIG. 1, the antenna 5 and the substrate electrode necessary for obtaining uniformity of ± 10% or less in a diameter of 300 mm by plasma of chlorine gas. Distance from 8 is 80
It was about mm. Further, with this configuration, when chlorine gas is supplied into the vacuum container 1 and VHF power of 1000 W is applied to the antenna 5, the ion saturation current density in the vicinity of the substrate 9 is 3.5 mA / cm ² at 1 Pa. Significant improvement was seen compared to.

In this way, even if the distance between the antenna 5 and the substrate 9 is reduced, the ion saturation current density distribution with good uniformity was obtained. In the two plasma traps 13 and 15, the donut-shaped 2 was formed. It is considered that this is because two high-density plasma regions were formed, and the plasma could be effectively transported even with a short diffusion distance with respect to the central portion and the peripheral portion of the substrate 9. Here, the dielectric plate 6 plays a role as a transmission path for transmitting electromagnetic waves from the antenna 5 to the second plasma trap 15. Further, a higher ion saturation current density was obtained as compared with the conventional example, because the distance between the antenna 5 and the substrate 9 was reduced, the plasma volume was reduced, and relatively high high-frequency power per unit volume was obtained. It is thought that this is because it was supplied.

Next, a second embodiment of the present invention will be described with reference to FIG.

FIG. 2 shows a sectional view of the plasma processing apparatus used in the second embodiment of the present invention. In FIG.
While a predetermined gas is introduced from the gas supply device 2 into the vacuum container 1, the gas is exhausted by the pump 3 as an exhaust device, and while maintaining the vacuum container 1 at a predetermined pressure, the high frequency power source 4 for the antenna supplies 100 MHz high frequency power The antenna 5
When it is supplied to the antenna 5 through the through-hole 7 provided in the dielectric plate 6 sandwiched between the antenna 5 and the vacuum container 1 and having substantially the same external dimensions as the antenna 5, plasma is generated in the vacuum container 1, Plasma treatment such as etching, deposition, and surface modification can be performed on the substrate 9 placed on the substrate electrode 8. At this time, by supplying high frequency power to the substrate electrode 8 from the high frequency power source 10 for substrate electrode, the ion energy reaching the substrate 9 can be controlled. The surface of the antenna 5 is covered with an insulating cover 11.

Further, the dielectric ring 16 is provided in close contact with the peripheral portion of the dielectric plate 6, and "the first ring provided in the peripheral portion of the antenna 5 and in close contact with the dielectric ring 16 is provided.
A first plasma trap 13 composed of a groove-shaped space between the conductor ring 12 and the antenna 5;
The second conductor ring 14 and the first conductor ring 12 which are provided in the peripheral part of the second conductor 2 and are closely attached to the dielectric ring 16 and have an inner diameter smaller than the outer diameter of the dielectric ring 16.
Second plasma trap 1 consisting of a groove-shaped space between
5 ”is provided.

In the plasma processing apparatus used in the second embodiment of the present invention shown in FIG. 2, the antenna 5 and the substrate electrode necessary for obtaining uniformity of ± 10% or less in the range of diameter 300 mm by chlorine gas plasma. Distance from 8 is 80
It was about mm. Further, with this configuration, when chlorine gas is supplied into the vacuum container 1 and VHF power of 1000 W is applied to the antenna 5, the ion saturation current density in the vicinity of the substrate 9 is 3.3 mA / cm ² at 1 Pa. Significant improvement was seen compared to.

In this way, even if the distance between the antenna 5 and the substrate 9 is reduced, the ion saturation current density distribution with good uniformity was obtained. In the two plasma traps 13 and 15, the doughnut-shaped 2 was formed. It is considered that this is because two high-density plasma regions were formed, and the plasma could be effectively transported even with a short diffusion distance with respect to the central portion and the peripheral portion of the substrate 9. Here, the dielectric ring 16 plays a role as a transmission path for transmitting electromagnetic waves from the antenna 5 to the second plasma trap 15. Further, a higher ion saturation current density was obtained as compared with the conventional example, because the distance between the antenna 5 and the substrate 9 was reduced, the plasma volume was reduced, and relatively high high-frequency power per unit volume was obtained. It is thought that this is because it was supplied.

Further, in the first embodiment of the present invention described with reference to FIG. 1, the dielectric plate 6 having a larger outer dimension than the antenna 5 is used, whereas in the second embodiment of the present invention described with reference to FIG. Then, the dielectric plate 6 having substantially the same external dimensions as the antenna 5
And the dielectric ring 16 is provided in close contact with the peripheral portion of the dielectric plate 6, and by adopting such a configuration, the materials of the dielectric plate 6 and the dielectric ring 16 are independent of each other. This is advantageous in that it can be selected and the degree of freedom in design is increased.

In the embodiment of the present invention described above,
Only a part of various variations regarding the shape of the vacuum container, the shape and arrangement of the antenna, the shape and arrangement of the dielectric, and the like are shown as examples within the scope of application of the present invention. Needless to say, in applying the present invention, various variations other than those exemplified here are conceivable.

Further, in the above-described embodiments of the present invention, the case where the high frequency power of 100 MHz is supplied to the antenna has been described, but the frequency is not limited to this, and plasma processing using a frequency of 50 MHz to 3 GHz is described. The present invention is effective in a method and an apparatus.

Further, as in the third embodiment of the present invention shown in FIG. 3, by grounding the antenna 5 with the short pin 17, a more isotropic electromagnetic field distribution can be obtained. As shown in the plan view of the antenna 5 in FIG. 4, the short pins 17 are provided at three places, and the short pins 17 are equally arranged with respect to the center of the antenna 5.

In the above-described embodiment of the present invention, the case where the surface of the antenna is covered with the insulating cover has been described, but the insulating cover may be omitted. However, if there is no insulating cover, problems such as contamination of the substrate by the substances that compose the antenna may occur,
It is better to provide an insulating cover when processing sensitive to pollution. If the insulating cover is not provided, the ratio of capacitive coupling between the antenna and the plasma tends to increase, and the plasma density in the central portion of the substrate tends to increase. Therefore, depending on the gas species and gas pressure used, the insulating cover may be used. In some cases, a more uniform plasma distribution may be obtained.

In the above-described embodiments of the present invention, the case where no DC magnetic field exists in the vacuum container has been described. However, when there is no DC magnetic field large enough to allow high frequency power to enter the plasma, For example,
The present invention is effective even when a small DC magnetic field of about several tens Gauss is used to improve the ignitability. However, the present invention is particularly effective when there is no DC magnetic field in the vacuum container.

[0036]

As is apparent from the above description, according to the plasma processing method of the first invention of the present application, the inside of the vacuum container is evacuated while supplying the gas into the vacuum container, and the inside of the vacuum container is kept at a predetermined pressure. The antenna provided in the vacuum container faces the substrate placed on the substrate electrode in the vacuum container while being controlled to be sandwiched between the antenna and the vacuum container, and has an outer dimension larger than that of the antenna. By applying high frequency power of 50 MHz to 3 GHz through a through hole provided in a large dielectric plate, plasma is generated in the vacuum container,
The distance between the antenna and the substrate electrode should be about 80 mm.
A plasma processing method of setting and processing a substrate, comprising:
"A groove-shaped first portion provided between the antenna and a first conductor ring provided in the peripheral portion of the antenna and provided on the dielectric plate .
A plasma trap ", provided on the periphery of the" first conductive ring and disposed on the dielectric plate, and an inner diameter before
Since the substrate is processed by the second conductor ring smaller than the outer shape of the dielectric plate and the groove-shaped second plasma trap between the first conductor ring, the distance between the antenna and the substrate is reduced. It is possible to provide a plasma processing method which has good uniformity and can obtain a high ion saturation current density.

Further, according to the plasma processing method of the second invention of the present application, the gas inside the vacuum container is evacuated while supplying the gas into the vacuum container, and the inside of the vacuum container is controlled at a predetermined pressure. A through hole provided in a dielectric plate that is sandwiched between the antenna and the vacuum container and has an outer dimension that is substantially the same as the antenna, in an antenna that is provided in the vacuum container facing the substrate mounted on the substrate electrode. Through the frequency of 50MHz to 3
By applying high frequency power of GHz, plasma is generated in the vacuum container, and the antenna and the substrate electrode
Is set to about 80 mm and the substrate is processed by a plasma processing method, wherein a dielectric phosphor layer is formed around the dielectric plate.
Grayed is provided, provided on the periphery of the "antenna, and,
A groove-shaped first plasma trap between a first conductor ring provided on the dielectric ring and the antenna, and "a dielectric ring provided on the periphery of the first conductor ring and
Provided, and a smaller second conductor ring than the outer shape of inner diameter of the dielectric ring, by a groove-shaped second plasma trap "between the first conductor ring, for processing said substrate, antenna It is possible to provide a plasma processing method that provides good uniformity and high ion saturation current density even if the distance between the substrate and the substrate is reduced.

Further, according to the plasma processing apparatus of the third aspect of the present invention supply a vacuum chamber, a gas into the vacuum chamber Suruga
Supply device , an exhaust device for exhausting the inside of the vacuum container, a substrate electrode for mounting a substrate in the vacuum container, an antenna facing the substrate electrode and provided at a distance of about 80 mm from the substrate electrode. And a dielectric plate sandwiched between the antenna and the vacuum container and having a larger outer dimension than the antenna,
Frequency 5 is applied to the antenna through the through hole provided in the dielectric plate.
0MHz to high-frequency electric supplying high frequency power 3GHz
A plasma processing apparatus comprising: a source , the first "provided on the periphery of the antenna and provided on the dielectric plate;
"A groove-shaped first plasma trap between a conductor ring and an antenna", "provided in the peripheral portion of the first conductor ring and provided in the dielectric plate , and having an inner diameter larger than the outer shape of the dielectric plate" Since a small second conductor ring and a groove-shaped second plasma trap are provided between the first conductor ring and the first conductor ring, even if the distance between the antenna and the substrate is small, the uniformity is good and the high ion It is possible to provide a plasma processing apparatus that can obtain a saturation current density.

Further, according to the plasma processing apparatus of the fourth aspect of the present invention supply a vacuum chamber, a gas into the vacuum chamber Suruga
Supply device , an exhaust device for exhausting the inside of the vacuum container, a substrate electrode for mounting a substrate in the vacuum container, a substrate electrode facing the substrate electrode, and a distance of about 80 mm from the substrate electrode.
An antenna that is, sandwiched between the antenna and the vacuum chamber, and a substantially equal dielectric plate antenna and outer dimensions,
Frequency 5 is applied to the antenna through the through hole provided in the dielectric plate.
0MHz to high-frequency electric supplying high frequency power 3GHz
A plasma processing apparatus including a source , wherein a dielectric ring is provided on a peripheral portion of the dielectric plate , and "a first dielectric ring is provided on a peripheral portion of the antenna and provided on the dielectric ring .
The conductor ring and the groove-shaped first plasma trap between the antenna "," disposed on the periphery of the first conductor ring and disposed in said dielectric ring, and an inner diameter of the induction
A second conductor ring smaller than the outer shape of the electric conductor ring;
Since the groove-shaped second plasma trap "between the conductor ring and the conductor ring is provided, the plasma processing apparatus has good uniformity and high ion saturation current density even if the distance between the antenna and the substrate is small. Can be provided.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration of a plasma processing apparatus used in a first embodiment of the present invention.

FIG. 2 is a sectional view showing a configuration of a plasma processing apparatus used in a second embodiment of the present invention.

FIG. 3 is a sectional view showing a configuration of a plasma processing apparatus used in a third embodiment of the present invention.

FIG. 4 is a plan view of an antenna used in a third embodiment of the present invention.

FIG. 5 is a sectional view showing a configuration of a plasma processing apparatus used in a conventional example.

[Explanation of symbols]

1 vacuum container 2 gas supply device 3 pumps 4 High frequency power supply for antenna 5 antennas 6 Dielectric plate 7 through holes 8 substrate electrodes 9 substrates 10 High frequency power supply for substrate electrode 11 Insulation cover 12 First conductor ring 13 First plasma trap 14 Second conductor ring 15 Second plasma trap

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI H05H 1/46 H01L 21/302 101B (56) References JP-A-9-148097 (JP, A) JP-A-2-194526 ( JP, A) JP 9-312268 (JP, A) JP 11-111494 (JP, A) JP 9-102400 (JP, A) JP 8-325759 (JP, A) JP 2000-243707 (JP, A) JP 2000-188280 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/3065 B01J 19/08 C23C 16/509 C23F 4/00 H01L 21/205 H05H 1/46

Claims (10)

(57) [Claims] 1. A gas is supplied into the vacuum container, the inside of the vacuum container is evacuated, and the inside of the vacuum container is controlled to a predetermined pressure.
An antenna provided in the vacuum container facing the substrate placed on the substrate electrode in the vacuum container, and provided on a dielectric plate that is sandwiched between the antenna and the vacuum container and has a larger outer dimension than the antenna. By applying high-frequency power having a frequency of 50 MHz to 3 GHz through the through hole, plasma is generated in the vacuum container, and the antenna and the substrate power are supplied.
A plasma processing method for processing a substrate by setting a distance from the pole to about 80 mm, wherein the method is "a first conductor ring provided on the peripheral portion of the antenna and between the first conductor ring provided on the dielectric plate and the antenna. "A groove-shaped first plasma trap" and a "second conductor provided in the peripheral portion of the first conductor ring and provided in the dielectric plate , and having an inner diameter smaller than the outer shape of the dielectric plate". A groove-shaped second between the ring and the first conductor ring
A plasma processing method , wherein the substrate is processed by "plasma trap". 2. The inside of the vacuum container is evacuated while supplying gas into the vacuum container, and the inside of the vacuum container is controlled to a predetermined pressure,
An antenna provided in the vacuum container facing the substrate placed on the substrate electrode in the vacuum container, and provided on a dielectric plate sandwiched between the antenna and the vacuum container and having substantially the same external dimensions as the antenna. By applying high-frequency power having a frequency of 50 MHz to 3 GHz through the through hole, plasma is generated in the vacuum container, and the antenna and the substrate power are supplied.
A plasma processing method for processing a substrate by setting a distance from a pole to about 80 mm , wherein a dielectric material is provided on a peripheral portion of the dielectric plate.
A ring is provided, “a groove-shaped first plasma trap provided in the peripheral portion of the antenna and provided between the antenna and the first conductor ring provided in the dielectric ring ”, and “of the first conductor ring It is provided on the periphery and the dielectric
Provided packaging, and inner and smaller second conductor ring than the outline of the dielectric ring, by a groove-shaped second plasma trap "between the first conductor ring, the substrate <br/> A plasma processing method, characterized in that the processing is performed. 3. The plasma processing method according to claim 1, further comprising a shorting pin that short-circuits the antenna and the vacuum container in order to provide the antenna with an isotropic electromagnetic field distribution. 4. The plasma processing method according to claim 1, wherein the surface of the antenna is covered with an insulating cover. 5. The plasma processing method according to claim 1, wherein a DC magnetic field does not exist in the vacuum container. 6. A vacuum container, and a gas is supplied into the vacuum container .
A gas supply device and an exhaust device for exhausting the inside of the vacuum container,
A substrate electrode on which a substrate is placed in a vacuum container, an antenna facing the substrate electrode and having a distance of about 80 mm from the substrate electrode, and between the antenna and the vacuum container. A dielectric plate that is sandwiched and has a larger external dimension than the antenna,
Frequency 5 is applied to the antenna through the through hole provided in the dielectric plate.
0MHz to high-frequency electric supplying high frequency power 3GHz
A plasma processing apparatus comprising: a source , the first "provided on the periphery of the antenna and provided on the dielectric plate;
"A groove-shaped first plasma trap between a conductor ring and an antenna", "provided in the peripheral portion of the first conductor ring and provided on the dielectric plate , and having an inner diameter larger than the outer shape of the dielectric plate" A plasma processing apparatus, characterized in that a groove-shaped second plasma trap "is provided between the small second conductor ring and the first conductor ring. 7. A vacuum container, and a gas is supplied into the vacuum container .
A gas supply device and an exhaust device for exhausting the inside of the vacuum container,
A substrate electrode on which a substrate is placed in a vacuum container is provided so as to face the substrate electrode and the distance between the substrate electrode and the substrate electrode is about 80 mm.
A stripped antenna, a dielectric plate sandwiched between the antenna and the vacuum container, and having substantially the same external dimensions as the antenna,
Frequency 5 is applied to the antenna through the through hole provided in the dielectric plate.
0MHz to high-frequency electric supplying high frequency power 3GHz
A plasma processing apparatus including a source , wherein a dielectric ring is provided on a peripheral portion of the dielectric plate , and "a first dielectric ring is provided on a peripheral portion of the antenna and provided on the dielectric ring .
The conductor ring and the groove-shaped first plasma trap between the antenna "," disposed on the periphery of the first conductor ring and disposed in said dielectric ring, and an inner diameter of the induction
A second conductor ring smaller than the outer shape of the electric conductor ring;
And a groove-shaped second plasma trap between the conductor ring and the conductor ring. 8. The plasma processing apparatus according to claim 6, further comprising a short pin that short-circuits the antenna and the vacuum container. 9. A plasma processing apparatus according to claim 6, wherein the surface of the antenna is covered with an insulating cover. 10. The plasma processing apparatus according to claim 6, wherein a coil or a permanent magnet for applying a DC magnetic field is not provided in the vacuum container.