JP3394696B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which protects an integrated circuit of semiconductor elements, stably secures an electrical connection between an external device and the semiconductor device, and enables the highest density mounting. Information and communication equipment, office electronic equipment,
The present invention relates to a chip size package (hereinafter referred to as CSP) used in household electronic devices, measuring devices, industrial electronic devices such as assembly robots, medical electronic devices, electronic toys, and the like.

[0002]

2. Description of the Related Art A conventional CSP will be described below with reference to the drawings. FIG. 4 is a block diagram showing a conventional CSP. a) is a plan view and b) is a cross-sectional view taken along line A1-A2 of a). The configuration of the conventional CSP will be described with reference to FIG.

Electrical connection to the outside of the device is made by a package electrode 32 formed on the second resin layer 31. The metal wiring 35 electrically connected to the element electrode 34 of the semiconductor element 33 is formed on the first resin layer 36, and the metal wiring 35 electrically connects the element electrode 34 of the semiconductor element 33 and the package electrode 32. Connected to. At this time, a barrier metal exists between the metal wiring 35 and the device electrode 33. The CSP is formed by the first resin layer 36 and the second resin layer 31 formed on the passivation film 38.
The stress caused by the difference in the coefficient of thermal expansion between the printed circuit board on which is mounted and the Si of the CSP is relaxed.

[0004]

In the conventional CSP, when forming a metal wiring on the first resin layer, it is necessary to form a barrier metal such as Ti / Pd on the Al electrode of the semiconductor element. is there. The formation of this barrier metal requires vapor deposition technology and etching technology for electrically noble metals, which imposes extremely difficult technology and high cost.

The present invention takes into consideration the problem that a technique of high difficulty and a high cost are required to form the barrier metal of such a conventional CSP, and the wiring layer of the CSP is formed without forming the barrier metal. It is an object of the present invention to provide a semiconductor device and a method for manufacturing the same that can be manufactured more easily and at a lower cost than the conventional method by forming the semiconductor device.

[0006]

To solve the problems mentioned above SUMMARY OF THE INVENTION The present invention of claim 1 includes a semiconductor device having an element electrode made of Al on the surface, the having an opening at the position of the element electrode and one resin layer, wherein a metal wiring made of the first formed in the resin layer on Cu, formed directly on the device electrodes, no that connects the metal wiring and the element electrode
A metal layer made of Ni formed by electrolytic plating; a second resin layer formed on the metal wiring and the first resin layer and having an opening at a part of the metal wiring; disposed open portion of the resin layer is a semiconductor device characterized by comprising a metal electrode connected to the metal wiring.

Further, according to the present invention of claim 2, a metal layer forming step of forming a metal layer on an element electrode of a semiconductor element by an electroless plating method, and an opening at a position of the element electrode after the metal layer forming step. a first resin layer forming step of forming a first resin layer on the semiconductor element to provide a part, the first
And the metal wire forming step of forming a metal wiring connected to the metal layer on the first resin layer after the resin layer forming step, before
A second resin layer forming step of forming a second resin layer serial and the first resin layer so as to provide an opening in part of the metal wiring after the metal wiring formation process on the metal wiring layer, wherein First
A semiconductor equipment manufacturing method characterized in that it comprises a metal electrode forming step of forming a metal electrode in the opening of the second resin layer after the second resin layer forming step.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view (a) of a CSP according to a first embodiment of the present invention, a cross-sectional view (b) and a bottom view (c) of an A1-A2 portion of FIG.

Electrical connection to the outside of the device is made by the package electrode 2 formed on the second resin layer 1. If necessary, a connecting material such as a solder ball 3 is formed on this electrode 2. The metal wiring 6 electrically connected to the element electrode 5 of the semiconductor element 4 is formed on the first resin layer 7, and the metal wiring 6 electrically connects the element electrode 5 of the semiconductor element 4 and the package electrode 2 to each other. Connected to. At this time, the metal wiring 6 is formed on the element electrode 5 via the Ni protrusion 8 formed by electroless plating, and is electrically connected to Al of the element electrode 5.

That is, since the CSP in the above-described first embodiment does not use a barrier metal which has a large number of steps in terms of construction method and is costly, it can be manufactured more easily and at a lower cost than conventional ones. .

Next, a method of manufacturing the CSP according to the second embodiment of the present invention will be described with reference to FIG. The CSP manufactured by the CSP manufacturing method according to the present embodiment is the CS according to the first embodiment described above.
It has the same configuration as P.

Ni having a height of several μm is formed on the device electrode 10 of the Si wafer 9 on which the semiconductor device is formed by electroless plating.
The protrusion 11 is formed (a). Next, the first resin layer 13 having a uniform thickness is formed on the entire wafer 9 (on the passivation film 12).
(Polyimide resin layer or epoxy resin layer) is formed, and the via 14 is formed at a position corresponding to the Ni protrusion 11.
(A minute hole exposing the Ni protrusion 11) is formed (b). The first resin layer 13 is formed by uniformly applying a liquid resin by a spin coating method and heating and curing it, and an etching method using a photomask or a laser is used for forming the via. Next, a metal layer 15 of Cu or the like is formed on the entire wafer 9 by vapor deposition or electroless plating.
Then, unnecessary metal is removed by etching to form a metal wiring pattern 16 on the first resin layer 13 and the Ni protrusion 11 (c). Further, the second resin layer 17 is formed in the same manner as the first resin layer 13,
A via 19 (a minute hole exposing a part of the metal wiring pattern 16) is formed at a position where the package electrode 18 is formed (d). The package electrode 18 is formed by using the same method as the method for forming the metal wiring pattern 16, and solder balls are mounted if necessary (e). Finally, the CSP 20 is formed by polishing the back surface of the wafer and dividing the wafer into individual pieces.

That is, the CSP manufacturing method according to the second embodiment described above does not include a barrier metal forming step, which requires a large number of steps in terms of construction method and is costly. CSP at low cost
It is a manufacturing method capable of manufacturing.

Next, a CSP manufacturing method according to the third embodiment of the present invention will be described with reference to FIG. The CSP manufactured by the CSP manufacturing method according to the present embodiment also has the same configuration as the CSP according to the above-described first embodiment.

A uniform first resin layer 22 (polyimide resin layer or epoxy resin layer) is formed on the entire Si wafer 21 on which semiconductor elements are formed, and a via 24 (element electrode) is formed at a position corresponding to the element electrode 23. A micro hole exposing 23 is formed (a). To form the first resin layer 22, a resin film processed to have a uniform thickness in advance is formed by an adhesive or vacuum pressure bonding and heating. If the resin film at this time is not completely cured, the resin film is stuck and heat-pressed as it is. The method of forming the via is the same as the method of manufacturing the CSP in the second embodiment described above. Next, the Ni protrusion 25 is formed on the exposed element electrode 23 on the wafer 21 by electroless plating (b). Subsequent steps are the same as the method for manufacturing the CSP in the second embodiment described above.

That is, the CSP manufacturing method according to the third embodiment described above does not include a barrier metal forming step, which requires a large number of steps in terms of construction method and is costly. CSP at low cost
It is a manufacturing method capable of manufacturing.

The metal layer of the present invention includes the above-mentioned first to first layers.
In the third embodiment, the Ni protrusion is described, but the present invention is not limited to this, and even a metal that is formed by an electroless plating method and has a good bonding property with the material of the element electrode and the metal wiring may be used. Good.

Further, in the semiconductor device manufacturing method of the present invention, in the above-described second and third embodiments, a planar aggregate of a plurality of small elements is manufactured, and after the metal electrode forming step, the planar surface is formed. Although the assembly has been described as being divided into individual pieces corresponding to each small element by dicing, each small element may be manufactured independently.

[0020]

As is apparent from the above description, according to the present invention, CS is formed without forming a barrier metal.
By forming the P wiring layer, it is possible to provide a semiconductor device that can be manufactured more easily and at a lower cost than a conventional one, and a manufacturing method thereof.

[Brief description of drawings]

FIG. 1 is a plan view and a cross-sectional view of a CSP according to a first embodiment of the present invention.

FIG. 2 is a sectional flow chart showing a method of manufacturing a CSP according to a second embodiment of the present invention.

FIG. 3 is a sectional flow chart showing a CSP manufacturing method according to a third embodiment of the present invention.

FIG. 4 is a configuration diagram showing a conventional CSP.

[Explanation of symbols]

1 Second resin layer 2 Package electrode 3 solder balls 4 Semiconductor element 5 element electrodes 6 metal wiring 7 First resin layer 8 Ni protrusion 9 Si wafer 10 element electrodes 11 Ni protrusion 12 passivation film 13 First resin layer 14 beer 15 Metal layer 16 metal wiring patterns 17 Second resin layer 18 Package electrodes (and solder balls) 19 beer 20 CSP 21 Si wafer 22 First resin layer 23 Element electrode 24 vias 25 Ni protrusion 26 metal wiring patterns 27 Second resin layer 28 Package electrodes (and solder balls) 29 beer 30 CSP 31 Second resin layer 32 package electrodes 33 Semiconductor element 34 element electrode 35 Metal wiring pattern 36 First resin layer 37 Barrier metal 38 passivation film 39 Polyimide resin layer

Claims (3)

(57) [Claims] And 1. A semiconductor device having an element electrode made of Al on the surface, a first resin layer having an opening at a position of the device electrodes, from the Cu formed on the first resin layer
And a metal wiring that is directly formed on the element electrode and that connects the element electrode and the metal wiring by electroless plating.
Formed by Ni , a second resin layer formed on the metal wiring and the first resin layer, and having an opening at a part of the metal wiring, and the second resin disposed open portion of the layer, the semiconductor device being characterized in that a metal electrode connected to the metal wiring. 2. A metal layer forming step of forming a metal layer on an element electrode of a semiconductor element by electroless plating, and the metal.
A first resin layer forming step of forming a first resin layer on the semiconductor element so as to provide an opening at the position of the element electrode after the layer forming step, and the first resin layer forming step after the first resin layer forming step . A metal wiring forming step of forming a metal wiring connected to the metal layer on the resin layer, and the first wiring so as to provide an opening in a part of the metal wiring after the metal wiring forming step . A second resin layer forming step of forming a second resin layer on the resin layer and the metal wiring layer, and a metal in the opening of the second resin layer after the second resin layer forming step. manufacturing method of a semiconductor equipment, characterized in that it comprises a metal electrode forming step of forming an electrode. 3. The device electrode is A1, and the metal layer is N.
i, the metal wiring is Cu
2. The method for manufacturing a semiconductor device according to 2 .