JP3422243B2 - Resin film - Google Patents
Resin filmInfo
- Publication number
- JP3422243B2 JP3422243B2 JP186198A JP186198A JP3422243B2 JP 3422243 B2 JP3422243 B2 JP 3422243B2 JP 186198 A JP186198 A JP 186198A JP 186198 A JP186198 A JP 186198A JP 3422243 B2 JP3422243 B2 JP 3422243B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- particles
- insulating
- conductive particles
- resin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920005989 resin Polymers 0.000 title claims description 85
- 239000011347 resin Substances 0.000 title claims description 85
- 239000002245 particle Substances 0.000 claims description 88
- 239000010954 inorganic particle Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000005304 joining Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
Landscapes
- Wire Bonding (AREA)
- Conductive Materials (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品の接続に
使用する樹脂フィルムおよびこれを用いた電子部品の接
続方法に関し、特に半導体チップ等の一方の電子部品と
基板等の他方の電子部品との電気的接続かつ機械的接合
に好適な樹脂フィルムおよびこれを用いた電子部品の接
続方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin film used for connecting electronic components and a method for connecting electronic components using the same, and particularly to one electronic component such as a semiconductor chip and the other electronic component such as a substrate. The present invention relates to a resin film suitable for electrical connection and mechanical joining, and a method for connecting electronic parts using the resin film.
【０００２】[0002]
【従来の技術】近年、電子機器の小型化、薄型化に伴
い、半導体チップ等の微小部品と基板等の微細回路を接
続する必要性が高まっており、その配線ピッチはますま
す小さくなってきている。従来これらの接続は、相互の
部品接続端子同士をワイヤボンディングする方法が主流
であったが、接続端子同士を対向させ直接接続する方が
より有利であることから、フリップチップ接続が盛んに
行われている。これらの端子同士の接続部は、外部環境
からの保護と接続信頼性の向上を目的として安価な樹脂
による封止が主としてなされており、対向端子間の電気
的接続後隣接端子間の隙間から液状樹脂を流入する方法
がとられていた。接続端子同士の接続は、例えばはんだ
接続、金−金圧着、導電性ペースト接続等によって実施
することができる。2. Description of the Related Art In recent years, with the miniaturization and thinning of electronic devices, the need for connecting minute components such as semiconductor chips to minute circuits such as substrates has increased, and the wiring pitch has become smaller and smaller. There is. Conventionally, the mainstream of these connections is a method of wire-bonding mutual component connection terminals, but since it is more advantageous to directly connect the connection terminals to each other, flip-chip connection is actively performed. ing. The connection part between these terminals is mainly sealed with an inexpensive resin for the purpose of protection from the external environment and improvement of connection reliability.After electrical connection between opposite terminals, liquid is formed from the gap between adjacent terminals. The method of inflowing the resin was taken. Connection between the connection terminals can be performed by, for example, solder connection, gold-gold pressure bonding, conductive paste connection, or the like.
【０００３】しかしながら小型化、薄型化が進行するに
つれて対向部品−回路間隙および隣接端子間隙が小さく
なり、液状樹脂の流入（アンダーフィル）が難しくなっ
てきている。一般的には低粘度のエポキシ樹脂等の熱硬
化性樹脂が使用されている。これに対して、接続する半
導体チップと基板を接続する際に、予めチップを搭載す
る基板領域に液状樹脂を塗布しておき、相互の接続端子
同士を目合わせ後熱圧着して電気的接続とともに機械的
接合することで、アンダーフィルを不要とする方法が提
案されている（特開平２−７１８０号公報）。この方法
では、半導体チップと基板は熱硬化型樹脂の硬化時の収
縮力によって接続端子同士が直接接触し、電気的接続さ
れる。However, with the progress of miniaturization and thinning, the gap between the opposing parts-circuit and the gap between the adjacent terminals become smaller, and it becomes difficult to inflow (underfill) the liquid resin. Generally, a thermosetting resin such as a low-viscosity epoxy resin is used. On the other hand, when connecting the semiconductor chip to be connected and the substrate, liquid resin is applied in advance to the substrate area where the chip is mounted, and the mutual connection terminals are aligned with each other and then thermocompression bonded for electrical connection. A method has been proposed in which underfilling is unnecessary by mechanical joining (Japanese Patent Laid-Open No. 2-7180). In this method, the semiconductor chip and the substrate are electrically connected by direct contact between the connection terminals due to the contracting force of the thermosetting resin during curing.
【０００４】一般に電子機器を高温下で使用、またはパ
ワーモジュール等の高温発熱の半導体素子を使用する際
には、半導体素子の周辺の樹脂は加熱されて膨張し、使
用終了後は冷却されて収縮する。この繰り返しにより樹
脂の劣化が生じる。上記方法では、電気的接続は接続端
子周辺の樹脂の硬化収縮力のみで保持されているため、
この樹脂の膨張収縮の繰り返しにより樹脂が劣化するに
つれて収縮力が緩和され、硬化時の樹脂収縮より熱時の
樹脂膨張が高くなった際に電気的接続不良が発生する。
このため樹脂の熱膨張係数を低下させ熱膨張を抑制する
ことが必要となり、通常熱膨張係数の小さいシリカ粒子
等の無機粒子を配合した樹脂が使用されている。Generally, when an electronic device is used under high temperature, or when a semiconductor device that generates high temperature such as a power module is used, the resin around the semiconductor device is heated and expanded, and after use is cooled and contracted. To do. This repetition causes deterioration of the resin. In the above method, the electrical connection is held only by the curing shrinkage force of the resin around the connection terminal,
As the resin deteriorates due to the repeated expansion and contraction of the resin, the contraction force is alleviated, and when the resin expansion during heating becomes higher than the resin expansion during curing, electrical connection failure occurs.
For this reason, it is necessary to lower the thermal expansion coefficient of the resin and suppress the thermal expansion. Usually, a resin containing inorganic particles such as silica particles having a small thermal expansion coefficient is used.
【０００５】この場合、接続端子形状が略平滑である
と、対向接続端子間に液状樹脂が介在し、電気的接続不
良を起こしやすい。特に樹脂中に配合されているシリカ
粒子等の無機粒子が端子間に挟まれやすい。そこで、接
続端子に先端が尖った形状の金属突起（バンプ）を設け
る工夫をした提案がされている（特開平９−９７８１６
号公報）。In this case, if the shape of the connection terminals is substantially smooth, the liquid resin is present between the opposing connection terminals, and electrical connection failure is likely to occur. In particular, inorganic particles such as silica particles mixed in the resin are likely to be sandwiched between the terminals. Therefore, it has been proposed to devise a metal projection (bump) having a sharp tip on the connection terminal (Japanese Patent Laid-Open No. 9-97816).
Issue).
【０００６】また、図３に示すように、樹脂３３中に導
電粒子３２を均一分散させ、対向接続端子間に該粒子を
介在させ熱圧着することにより、電気的接続を行うと同
時に隣接端子間には絶縁性を確保させる、いわゆる異方
性導電接続樹脂３１および接続方法が提案されている
（特開昭６２−１４１０８３号公報、特開平７−１５７
７２０号公報等）。導電粒子としては、例えばニッケ
ル、はんだ等の金属粒子や絶縁樹脂表面に例えば金めっ
き処理した粒子等が使用されている。樹脂形態として
は、液状（ペースト状）およびフィルム状のものがあ
る。この場合、導電粒子を接続端子間に介在させるため
に有利なように接続端子形状は上面が平滑なものが用い
られる。Further, as shown in FIG. 3, the conductive particles 32 are uniformly dispersed in the resin 33, and the particles are interposed between the opposing connection terminals to perform thermocompression bonding, thereby making an electrical connection and at the same time between the adjacent terminals. JP-A-62-141083 and JP-A-7-157 propose a so-called anisotropic conductive connecting resin 31 and a connecting method for ensuring insulation.
No. 720, etc.). As the conductive particles, for example, metal particles of nickel, solder or the like, particles of which the surface of the insulating resin is plated with gold, or the like are used. The resin form includes liquid (paste) and film forms. In this case, the shape of the connection terminal has a smooth upper surface so that the conductive particles are advantageously interposed between the connection terminals.
【０００７】[0007]
【発明が解決しようとする課題】上述したように、フリ
ップチップ接続用樹脂として熱硬化性の液状（ペースト
状）樹脂を使用した場合、樹脂の硬化時間が数分から数
時間と長く生産性が低いという問題点がある。また、市
販されている異方性導電樹脂の場合は、通常導電粒子以
外の無機粒子は配合されていないか、あるいは配合され
ていても比較的微量であるためか樹脂自体の熱膨張係数
が大きく、耐熱性、耐湿性も不十分となりやすい。本発
明は、従来例のかかる問題点に鑑みてなされたものであ
り、その目的はフリップチップ接続に好適な数十秒程度
の短時間での接続が可能で、接続信頼性が高い樹脂フィ
ルムおよびこのフィルムを用いた電子部品の接続方法を
提供することにある。As described above, when a thermosetting liquid (paste) resin is used as the flip-chip connecting resin, the curing time of the resin is as long as several minutes to several hours and the productivity is low. There is a problem. Further, in the case of a commercially available anisotropic conductive resin, the thermal expansion coefficient of the resin itself is large because the inorganic particles other than the conductive particles are usually not mixed, or even if they are mixed, the amount is relatively small. In addition, heat resistance and moisture resistance tend to be insufficient. The present invention has been made in view of the above problems of the conventional example, the object thereof is a resin film having high connection reliability, which can be connected in a short time of about several tens of seconds and which is suitable for flip chip connection. An object of the present invention is to provide a method of connecting electronic parts using this film.
【０００８】[0008]
【課題を解決するための手段】本発明に係る樹脂フィル
ムは、樹脂中に絶縁性粒子と導電性粒子を含有してお
り、導電性粒子が絶縁性粒子の表面に金属層を形成した
粒子であり、絶縁性粒子粒径が導電性粒子粒径より小さ
く、絶縁性粒子および導電性粒子のコア絶縁粒子が同一
の無機粒子であることを特徴とするものである。The resin film according to the present invention contains insulating particles and conductive particles in the resin.
The conductive particles formed a metal layer on the surface of the insulating particles.
Particles whose insulating particle size is smaller than the conductive particle size
Insulating particles and conductive particles have the same core insulating particles
It is characterized by being inorganic particles .
【０００９】樹脂中にシリカ粒子等の絶縁粒子と導電粒
子を配合し、樹脂をフィルム状とすることで、短時間で
の電気的接続および機械的接合が可能となり、樹脂の熱
膨張係数は低下し、機械的強度、耐熱性および耐湿性が
向上する。導電粒子が絶縁粒子より粒径が大きい構成と
することで、相互の電子部品間にこの樹脂フィルムを介
在させ対向接続端子同士を目合わせ後熱圧着する際、接
続端子間に大粒径の導電粒子が挟み込まれて電気的接続
され、粒径の小さい絶縁粒子は接続端子間に挟み込まれ
ないので、樹脂の熱膨張係数は低下し、機械的強度、耐
熱性および耐湿性は向上するため接続信頼性が向上す
る。By mixing insulating particles such as silica particles and conductive particles into resin and forming the resin into a film, electrical connection and mechanical joining can be achieved in a short time, and the thermal expansion coefficient of the resin decreases. However, the mechanical strength, heat resistance and moisture resistance are improved. When the conductive particles have a larger particle size than the insulating particles, the resin film is interposed between the electronic parts of each other and when the opposing connection terminals are aligned and thermocompression bonded, the large-sized conductive particles Since particles are sandwiched and electrically connected, and insulating particles with a small particle size are not sandwiched between the connection terminals, the coefficient of thermal expansion of the resin is reduced, and mechanical strength, heat resistance and moisture resistance are improved, so connection reliability is improved. The property is improved.
【００１０】この時、樹脂中への絶縁粒子の配合量は２
０〜７０重量％程度が好ましく、導電粒子の配合率は１
〜１０容量％程度が好ましい。また、絶縁粒子の粒径は
３μｍ未満が好ましく、導電粒子の粒径は３〜１０μｍ
程度が好ましい。At this time, the compounding amount of the insulating particles in the resin is 2
About 0 to 70% by weight is preferable, and the blending ratio of conductive particles is 1
About 10 to 10% by volume is preferable. The particle size of the insulating particles is preferably less than 3 μm, and the particle size of the conductive particles is 3 to 10 μm.
A degree is preferable.
【００１１】[0011]
【発明の実施の形態】以下、図面により本発明について
詳細に説明するが、本発明はこれらの実施形態例のみに
限定されるものではない。図１は、本発明の樹脂フィル
ムの一実施形態例を示す断面図である。この樹脂フィル
ム１１は、樹脂１４中に絶縁無機粒子１２および導電性
粒子１３が均一分散することで構成されている。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below in detail with reference to the drawings, but the present invention is not limited to these embodiments. FIG. 1 is a sectional view showing an embodiment of the resin film of the present invention. The resin film 11 is formed by uniformly dispersing the insulating inorganic particles 12 and the conductive particles 13 in the resin 14.
【００１２】本実施形態の樹脂フィルムに使用できる樹
脂１４は、熱硬化性樹脂、熱可塑性樹脂、これらの混合
物等特に限定されない。熱硬化性樹脂としては、例えば
エポキシ樹脂、フェノール樹脂、シリコーン樹脂等が挙
げられる。エポキシ樹脂としては、ビスフェノールＡ
型、ジシクロペンタジエン型、クレゾールノボラック
型、ビフェニル型、ナフタレン型等が挙げられる。フェ
ノール樹脂としては、レゾール型、ノボラック型などを
用いることができる。また、シリコーン樹脂としては、
構造式−（Ｒ2ＳｉＯ）n−で表される樹脂を例示するこ
とができる（Ｒはメチル基あるいはフェニル基を示
す）。また、熱可塑性樹脂としては、アクリル樹脂、ポ
リエステル樹脂、ＡＢＳ樹脂、ポリカーボネート樹脂、
フェノキシ樹脂等が挙げられる。The resin 14 that can be used in the resin film of the present embodiment is not particularly limited, such as a thermosetting resin, a thermoplastic resin and a mixture thereof. Examples of the thermosetting resin include epoxy resin, phenol resin, silicone resin and the like. As an epoxy resin, bisphenol A
Type, dicyclopentadiene type, cresol novolac type, biphenyl type, naphthalene type and the like. As the phenol resin, a resol type, a novolac type or the like can be used. Also, as the silicone resin,
The resin represented by the structural formula — (R 2 SiO) n — can be exemplified (R represents a methyl group or a phenyl group). As the thermoplastic resin, acrylic resin, polyester resin, ABS resin, polycarbonate resin,
Examples thereof include phenoxy resin.
【００１３】本実施形態の樹脂フィルム１１中には、樹
脂の熱膨張係数を低下させるために絶縁無機粒子１２が
均一分散される。絶縁無機粒子１２の例としては、シリ
カ、アルミナ、窒化硼素、窒化珪素等が挙げられるが、
その中でも球状のシリカ粒子が低コスト、低比重、高流
動性の点で優れている。無機粒子の配合量は、２０〜７
０重量％程度が適当である。Insulating inorganic particles 12 are uniformly dispersed in the resin film 11 of this embodiment in order to reduce the thermal expansion coefficient of the resin. Examples of the insulating inorganic particles 12 include silica, alumina, boron nitride, silicon nitride, and the like.
Among them, spherical silica particles are excellent in low cost, low specific gravity and high fluidity. The blending amount of the inorganic particles is 20 to 7
About 0% by weight is suitable.
【００１４】また、本実施形態の樹脂フィルム１１中に
は、導電性粒子１３が合わせて配合される。導電性粒子
１３としては、従来の異方性導電フィルムに配合されて
いる粒子を使用することができる。例えば、ニッケル、
はんだ、銅、銀等の金属粒子、絶縁樹脂表面にニッケ
ル、金等の金属層を有する粒子、あるいは絶縁無機粒子
表面に必要に応じて樹脂被覆し、この表面にニッケル、
金等の金属層を施した粒子等が挙げられる。中でも上記
の絶縁無機粒子の表面にニッケル、金等の金属層を有す
る粒子を使用すると、樹脂の低熱膨張係数化に有効であ
る。導電性粒子１３の配合率は、１〜１０容量％程度が
適当である。In the resin film 11 of this embodiment, conductive particles 13 are also compounded. As the conductive particles 13, particles that have been mixed with conventional anisotropic conductive films can be used. For example, nickel,
Solder, copper, metal particles such as silver, particles having a metal layer such as nickel and gold on the insulating resin surface, or insulating inorganic particle surface resin coated as necessary, nickel on the surface,
Examples thereof include particles provided with a metal layer such as gold. Above all, the use of particles having a metal layer of nickel, gold or the like on the surface of the above-mentioned insulating inorganic particles is effective for lowering the coefficient of thermal expansion of the resin. A suitable blending ratio of the conductive particles 13 is about 1 to 10% by volume.
【００１５】次に本実施形態例の樹脂フィルム１１を用
いた電子部品の接続方法を図２を用いて説明する。一例
として、一方の電子部品として半導体チップ２４、他方
の電子部品として回路基板２６を用いた場合について示
す。ここで、回路基板２６としてはガラスエポキシ樹脂
等のプリント基板、アルミナ等のセラミック基板、ガラ
ス基板等が使用できる。Next, a method of connecting electronic parts using the resin film 11 of this embodiment will be described with reference to FIG. As an example, a case where the semiconductor chip 24 is used as one electronic component and the circuit board 26 is used as the other electronic component will be described. Here, as the circuit board 26, a printed board such as glass epoxy resin, a ceramic board such as alumina, or a glass board can be used.
【００１６】まず、半導体チップ２４の表面に設けられ
た複数の接続端子２５上に上面が略平坦な形状の金属突
起２８を形成する。金属突起２８の形成方法としては、
例えばワイヤボンディングで使用する金、アルミニウム
等のボンディングワイヤを半導体チップのアルミニウム
パッドにボンディングし、ワイヤを過剰な力で引きちぎ
った後加圧して平坦化して得ることもできるし、めっき
により形成することもできる。First, metal projections 28 having a substantially flat top surface are formed on a plurality of connection terminals 25 provided on the surface of the semiconductor chip 24. As a method of forming the metal protrusion 28,
For example, it can be obtained by bonding a bonding wire such as gold or aluminum used for wire bonding to an aluminum pad of a semiconductor chip, tearing the wire off with an excessive force and then pressurizing and flattening it, or by plating. it can.
【００１７】次に、回路基板２６表面の半導体チップ２
４搭載領域に本実施形態の樹脂フィルム１１を仮圧着す
る。樹脂フィルム１１は、半導体チップ２４より一回り
大きな形状とし、その厚みは半導体チップ２４表面の接
続端子２５と、回路基板２６の接続端子２７と、金属突
起２８の高さの和と概ね同等レベルであればよい。使用
する樹脂フィルム１１は、前述した絶縁無機粒子１２と
導電性粒子１３を含有したフィルムである。Next, the semiconductor chip 2 on the surface of the circuit board 26
4 The resin film 11 of the present embodiment is temporarily pressure-bonded to the mounting area. The resin film 11 has a shape slightly larger than the semiconductor chip 24, and the thickness thereof is approximately the same level as the sum of the heights of the connection terminals 25 on the surface of the semiconductor chip 24, the connection terminals 27 of the circuit board 26, and the metal protrusions 28. I wish I had it. The resin film 11 used is a film containing the insulating inorganic particles 12 and the conductive particles 13 described above.
【００１８】最後に半導体チップ２４と回路基板２６の
接続端子２７を位置合わせ後、回路基板２６上に半導体
チップ２４を搭載、続いて熱圧着することで電気的接続
と同時に樹脂フィルム溶融物にて両方の電子部品間を機
械的に接合することができる。この際、接続端子２５の
金属突起２８と、回路基板２６の接続端子２７間に導電
性粒子１３が挟み込まれ電気的に接続される。金属突起
２８と接続端子２７の間隔は、挟み込まれる粒子が剛直
である場合その粒径によって決定される。従って、導電
性粒子１３の大きさが均一であれば、より安定した電気
的接続が得られる。Finally, after aligning the semiconductor chip 24 and the connection terminal 27 of the circuit board 26, the semiconductor chip 24 is mounted on the circuit board 26, and then thermocompression bonding is performed, whereby electrical connection and resin film melt are simultaneously performed. It is possible to mechanically bond both electronic components. At this time, the conductive particles 13 are sandwiched between the metal protrusions 28 of the connection terminals 25 and the connection terminals 27 of the circuit board 26 to be electrically connected. The distance between the metal protrusion 28 and the connection terminal 27 is determined by the particle size of the sandwiched particles when they are rigid. Therefore, if the size of the conductive particles 13 is uniform, more stable electrical connection can be obtained.
【００１９】絶縁無機粒子１２は樹脂の熱膨張係数低
下、機械的強度、耐熱性および耐湿性向上に寄与し、そ
の結果接続信頼性は向上する。この際加圧により変形す
る絶縁樹脂粒子表面に金属層を設けた導電性粒子を併用
するとさらに接続信頼性は向上する。この樹脂粒子表面
に金属層を設けた導電性粒子の粒径は、絶縁無機粒子１
２より大きければよい。The insulating inorganic particles 12 contribute to lowering the coefficient of thermal expansion of the resin, improving mechanical strength, heat resistance and moisture resistance, and as a result, the connection reliability is improved. At this time, if the conductive particles having a metal layer provided on the surface of the insulating resin particles that are deformed by pressure are used together, the connection reliability is further improved. The particle size of the conductive particles provided with a metal layer on the surface of the resin particles is as follows:
It should be larger than 2.
【００２０】本実施形態例においては、粒径３μｍ未満
の絶縁無機粒子１２、粒径３〜１０μｍ程度の導電性粒
子１３を好適に使用することができる。導電性粒子１３
の粒径分布は狭いほどよく、単一粒径の場合が最適であ
る。また、導電性粒子としてコアに絶縁無機粒子を、表
面にめっき等の金属層を有する粒子を使用すると、樹脂
の熱膨張係数の増加抑制に有効である。この際コアとな
る絶縁無機粒子と金属層の密着力を向上させるため、必
要に応じて絶縁無機粒子と金属層の間に樹脂コート層を
介在させることができる。In this embodiment, insulating inorganic particles 12 having a particle size of less than 3 μm and conductive particles 13 having a particle size of 3 to 10 μm can be preferably used. Conductive particles 13
The narrower the particle size distribution, the better, and the single particle size is optimal. In addition, when insulating inorganic particles are used as the conductive particles and particles having a metal layer such as plating on the surface are used as the conductive particles, it is effective in suppressing an increase in the thermal expansion coefficient of the resin. At this time, a resin coat layer can be interposed between the insulating inorganic particles and the metal layer, if necessary, in order to improve the adhesion between the insulating inorganic particles to be the core and the metal layer.
【００２１】本実施の形態の樹脂フィルム１１を用いて
電子部品の接続を行うことで、電子部品を短時間で電気
的、機械的に接続することが可能であり、その信頼性は
非常に高い。なお、本発明の技術範囲は上記実施の形態
に限定されるものではなく、本発明の趣旨を逸脱しない
範囲において種々の変更を加えることが可能である。例
えば本実施の形態で用いた絶縁無機粒子、導電性粒子、
樹脂などの材質は適宜変更して差し支えない。By connecting the electronic parts using the resin film 11 of the present embodiment, the electronic parts can be connected electrically and mechanically in a short time, and the reliability thereof is very high. . The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, insulating inorganic particles used in the present embodiment, conductive particles,
Material such as resin may be changed appropriately.
【００２２】[0022]
【実施例】以下、本発明を実施例により具体的に説明す
るが、本発明はこれらの実施例のみに限定されるもので
はない。組成の異なる１０種類の樹脂フィルム（実施例
６種類、比較例４種類）を用いて、半導体チップとプリ
ント基板（１００μｍピッチ）の接続を、各樹脂フィル
ムごとに適切な条件を用いて検討した。表１および表２
に、樹脂フィルムの主構成、接続条件、初期接続抵抗、
信頼性１として高温高湿保管試験（８５℃、８５％、８
００時間後の接続信頼性良否）、信頼性２として温度サ
イクル試験（−４０℃、３０分間〜１２５℃、３０分
間、５００サイクル後の接続信頼性良否）についてまと
めた。EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples. Using 10 kinds of resin films having different compositions (6 kinds of examples and 4 kinds of comparative examples), the connection between the semiconductor chip and the printed circuit board (100 μm pitch) was examined under appropriate conditions for each resin film. Table 1 and Table 2
The main configuration of the resin film, connection conditions, initial connection resistance,
High temperature and high humidity storage test as reliability 1 (85 ℃, 85%, 8
The temperature cycle test (-40 ° C., 30 minutes to 125 ° C., 30 minutes, connection reliability after 500 cycles) was summarized as reliability 2.
【００２３】表１に示した、本発明の樹脂フィルム６種
類はいずれも、高温高湿保管試験、温度サイクル試験の
結果良好な接続信頼性を有していることが認められた。
一方、表２に示した比較例の樹脂フィルム４種類は、特
に温度サイクル試験において接続信頼性に問題があるこ
とが判明した。As a result of the high temperature and high humidity storage test and the temperature cycle test, it was confirmed that all of the six resin films of the present invention shown in Table 1 had good connection reliability.
On the other hand, it was found that the four types of resin films of the comparative examples shown in Table 2 had a problem in connection reliability especially in the temperature cycle test.
【００２４】[0024]
【表１】 [Table 1]
【００２５】[0025]
【表２】 [Table 2]
【００２６】[0026]
【発明の効果】上述のごとく、本発明の樹脂フィルムを
用いた電子部品のフリップチップ接続は、高い接続信頼
性を提供する。その理由は、樹脂中に熱膨張係数の小さ
い絶縁粒子と導電粒子を含有するため樹脂の熱膨張係数
は低下、機械的強度、耐熱性および耐湿性が向上し、導
電粒子が絶縁粒子より粒径が大きい構成とすることで、
相互の電子部品間にこの樹脂フィルムを介在させ対向接
続端子同士を目合わせ後熱圧着する際、粒径の大きい導
電粒子が選択的に対向接続端子間に挟まれ、安定した電
気的接続が得られるためである。As described above, flip-chip connection of electronic parts using the resin film of the present invention provides high connection reliability. The reason is that since the resin contains insulating particles and conductive particles having a small coefficient of thermal expansion, the coefficient of thermal expansion of the resin is reduced, the mechanical strength, heat resistance and moisture resistance are improved, and the conductive particles have a particle diameter larger than that of the insulating particles. With a large configuration,
When this resin film is placed between the electronic parts of each other and the opposing connection terminals are aligned and thermocompression bonded, conductive particles with a large particle size are selectively sandwiched between the opposing connection terminals, and a stable electrical connection is obtained. This is because
【図１】 本発明の樹脂フィルムの一実施形態例を示す
断面図である。FIG. 1 is a cross-sectional view showing an embodiment of a resin film of the present invention.
【図２】 本発明の樹脂フィルムを使用した電子部品の
接続構造の一実施形態例を示す断面図である。FIG. 2 is a cross-sectional view showing an embodiment of a connection structure for electronic parts using the resin film of the present invention.
【図３】 従来の樹脂フィルムの一例の断面図である。FIG. 3 is a cross-sectional view of an example of a conventional resin film.
１１ 樹脂フィルム １２ 絶縁無機粒子 １３ 導電性粒子 １４ 樹脂 ２４ 半導体チップ ２５ 接続端子 ２６ 回路基板 ２７ 接続端子 ２８ 金属突起 11 Resin film 12 Insulating inorganic particles 13 Conductive particles 14 resin 24 semiconductor chips 25 connection terminals 26 circuit board 27 connection terminals 28 Metal protrusion
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01B 1/20 H01L 21/60 311 ─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01B 1/20 H01L 21/60 311
Claims (4)
する樹脂フィルムにおいて、導電性粒子が絶縁性粒子の
表面に金属層を形成した粒子であり、絶縁性粒子粒径が
導電性粒子粒径より小さく、前記絶縁性粒子および前記
導電性粒子のコア絶縁粒子が同一の無機粒子であること
を特徴とする樹脂フィルム。1. A resin film containing insulating particles and conductive particles in a resin, wherein the conductive particles are particles having a metal layer formed on the surface of the insulating particles, and the particle size of the insulating particles is the conductive particles. rather smaller than the particle diameter, the insulating particles and the
A resin film, wherein the core insulating particles of the conductive particles are the same inorganic particles .
の間に絶縁樹脂層が介在することを特徴とする請求項１
に記載の樹脂フィルム。2. A method according to claim 1, insulating resin layer between the core insulating particles and the metal layer of the conductive particles, characterized in that the intervening
Resin film according to.
コア絶縁粒子が球状シリカであることを特徴とする請求
項１又は２に記載の樹脂フィルム。3. A resin film according to claim 1 or 2 core insulating particles of the insulating particles and the conductive particles are characterized by a spherical silica.
あり、前記絶縁性粒子の粒径が３μｍ未満であることを
特徴とする請求項１ないし３のいずれか１項に記載の樹
脂フィルム。 4. The particle size of the conductive particles is 3 to 10 μm.
And that the particle size of the insulating particles is less than 3 μm.
The tree according to any one of claims 1 to 3, characterized in that
Fat film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP186198A JP3422243B2 (en) | 1998-01-07 | 1998-01-07 | Resin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP186198A JP3422243B2 (en) | 1998-01-07 | 1998-01-07 | Resin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11203938A JPH11203938A (en) | 1999-07-30 |
| JP3422243B2 true JP3422243B2 (en) | 2003-06-30 |
Family
ID=11513338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP186198A Expired - Fee Related JP3422243B2 (en) | 1998-01-07 | 1998-01-07 | Resin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3422243B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3119230B2 (en) * | 1998-03-03 | 2000-12-18 | 日本電気株式会社 | Resin film and method for connecting electronic components using the same |
| JP5010990B2 (en) | 2007-06-06 | 2012-08-29 | ソニーケミカル＆インフォメーションデバイス株式会社 | Connection method |
| JP5014890B2 (en) | 2007-06-20 | 2012-08-29 | パナソニック株式会社 | Electrode core wire joining method |
| WO2011155348A1 (en) * | 2010-06-09 | 2011-12-15 | ソニーケミカル＆インフォメーションデバイス株式会社 | Light-reflective anisotropic electrically conductive paste, and light-emitting device |
-
1998
- 1998-01-07 JP JP186198A patent/JP3422243B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11203938A (en) | 1999-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3119230B2 (en) | Resin film and method for connecting electronic components using the same | |
| KR100290993B1 (en) | Semiconductor device, wiring board for mounting semiconductor and method of production of semiconductor device | |
| US20050006789A1 (en) | Packaging assembly and method of assembling the same | |
| KR100315158B1 (en) | High reliability non-conductive adhesives for non-solder flip chip bondings and flip chip bonding method using the same | |
| KR100424382B1 (en) | Semiconductor device having heat spreader attached thereto and method of manufacturing the same | |
| CN101256996A (en) | Semiconductor device and manufacturing method thereof | |
| JPH11150135A (en) | Conductive paste of superior thermal conductivity and electronic device | |
| JP4206631B2 (en) | Thermosetting liquid sealing resin composition, method for assembling semiconductor element, and semiconductor device | |
| JP2001230341A (en) | Semiconductor device | |
| US6528889B1 (en) | Electronic circuit device having adhesion-reinforcing pattern on a circuit board for flip-chip mounting an IC chip | |
| JP3492025B2 (en) | Circuit board structure | |
| JP3966686B2 (en) | Connecting material | |
| JP4581301B2 (en) | Semiconductor package | |
| JP3422243B2 (en) | Resin film | |
| JP3464826B2 (en) | Semiconductor device | |
| JP3120837B2 (en) | Resin film for electrical connection and electrical connection method using the resin film | |
| JP2003086626A (en) | Electronic component, manufacturing method thereof, mounted body of electronic component, and mounting method | |
| JP3183272B2 (en) | Semiconductor device and method of manufacturing the same | |
| JPH022151A (en) | package structure | |
| JP2000290471A (en) | Resin composition for sealing | |
| JPH04171970A (en) | Semiconductor device | |
| JP2003152022A (en) | Adhesive member, semiconductor device and its manufacturing method, circuit board, and electronic equipment | |
| JP3148008B2 (en) | Method of connecting substrate and chip using conductive adhesive | |
| JP2000156386A (en) | Semiconductor device connection structure and connection method, and semiconductor device package using the same | |
| JP2000312068A (en) | Wiring board and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20030325 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080425 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090425 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100425 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110425 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120425 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120425 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130425 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130425 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140425 Year of fee payment: 11 |
|
| LAPS | Cancellation because of no payment of annual fees |