JP3841785B2 - High frequency circuit element - Google Patents

Description

The present invention has a first wireless communication system, relates to a high-frequency circuit element for resonance to be used in the apparatus to handle high-frequency signals.

  2. Description of the Related Art Conventionally, high-frequency circuit elements including a high-frequency filter and a resonator as a basic element are indispensable elements for communication systems. Further, among the resonators, by using a dielectric material such as a ceramic material having a high dielectric constant and a low loss, a high-frequency circuit element that functions as a small, low-loss (high Q) resonator can be realized.

  By the way, such a resonator and circuit elements other than the resonator, for example, an amplifier circuit, an oscillation circuit, a mixer circuit, and the like may be provided on the same substrate, and the high-frequency circuit may have a module configuration. In that case, it is necessary to input and output a high-frequency signal from a transmission line such as a strip line on the substrate to the resonator. As such a high-frequency circuit and using a dielectric, for example, as disclosed in JP-A-10-284946, a dielectric member is arranged on a circuit board and a strip line is arranged in the vicinity thereof. Thus, there is known one that inputs and outputs a high-frequency signal to a resonator.

In this case, the dielectric member has a circular cross section and resonates in the TE ₀₁ δ mode. A dielectric member is used for the purpose of transmitting only a desired frequency component of the high-frequency signal from the strip line or removing an unnecessary frequency component.

  However, the conventional high frequency circuit in which the dielectric member is arranged on the substrate has the following problems.

  First, since the dielectric member is used without being shielded, a high-frequency signal (electromagnetic wave) is radiated from the dielectric member. Therefore, there is a possibility that the loss of the resonator increases, that is, the resonance Q value decreases. In addition, the radiated electromagnetic waves may be combined with other circuits on the substrate, leading to unstable circuit operation. Furthermore, in order to suppress the coupling between the radiated electromagnetic wave and other circuits, it is necessary to dispose the dielectric member and other circuits at a certain distance, which is a factor that hinders downsizing of the entire module. .

  The above problems appear more prominently as the frequency of the high-frequency signal handled in the high-frequency circuit becomes higher, which may be a fatal problem in the millimeter wave band or the like.

In addition, in the TE ₀₁ δ mode resonator, the distribution of the resonant electric field may rotate so as to draw a concentric circle inside the cylindrical dielectric member, and the desired coupling with the strip line arranged on the substrate can be achieved. It can be difficult to obtain.

An object of the present invention, incorporating a dielectric member, is to provide a small high-frequency circuit element loss.

Each of the first and second high-frequency circuit elements of the present invention has at least one dielectric member capable of causing a resonance state of electromagnetic waves, and a dielectric constant surrounding the dielectric member is smaller than that of the dielectric member A support member, a shielding conductor surrounding the periphery of the dielectric member, a strip conductor disposed to face a part of the dielectric member, a ground conductor layer facing the strip conductor, and interposed between the strip conductor and the ground conductor layer At least one transmission line having a dielectric layer, and a coupling probe connected to the transmission line and having an electromagnetic wave input coupling function or an output coupling function with the dielectric member, the dielectric member comprising: , TM ₁₁ [delta] mode in the rectangular cross-section, or is intended to be excited by the TM ₀₁ [delta] mode in a circular cross-section, wherein the coupling probe, the dielectric portion A of the outer surface, is disposed in the vicinity of the plane substantially parallel to the rectangular cross section or a circular cross-section.

Thereby, in the 1st and 2nd high frequency circuit element of the present invention, since the dielectric member is surrounded by the shielding conductor, the radiation of the electromagnetic wave from the dielectric member to the outside is blocked, and on the structure of the transmission line, Connection to other semiconductor devices or the like is made smoothly in the high-frequency circuit. In other words, the function that has been realized in the conventional waveguide or the like is realized on the circuit board. Therefore, the loss can be reduced, that is, the Q value can be increased, and the size of the entire high-frequency circuit in which the high-frequency circuit element is arranged can be reduced.

In the first and second high-frequency circuit elements of the present invention, since the dielectric member is excited in the TM mode, the electric field is oriented in the longitudinal direction of the dielectric member in the TM mode resonator. The coupling with the strip conductor of the transmission line is easily realized. As a result, a transmission line having strip conductors for input and output can be used, and by arranging the transmission line on a common substrate with the high-frequency circuit, it is easy to apply to a high-frequency circuit having a module configuration.

In the first high-frequency circuit element of the present invention, a dielectric substrate and a first conductor film formed on a surface of the dielectric substrate facing the dielectric member and serving as a part of the shielding conductor are provided. It has more . Thereby , simplification of a manufacturing process can be achieved.

On the other hand, in the second high-frequency circuit element of the present invention, the cross-sectional shape of the dielectric member in the direction perpendicular to the longitudinal direction of the dielectric member is changed so that the area becomes maximum at the center . Thereby , size reduction of a high frequency circuit element can be achieved.

  As described above, by using the configuration of the high-frequency circuit element of the present invention, it is possible to perform a resonance operation with a small size and a high Q value with a simple configuration. In particular, when applied to circuit elements such as a resonator and a filter in the millimeter wave band, the effect is more exhibited.

(First reference form)
1A, 1B, and 1C are a perspective view, a longitudinal sectional view, and a transverse sectional view, respectively, of a high-frequency circuit element according to a first reference embodiment of the present invention. As shown in FIG. 1 (a) ~ (c) , the high-frequency circuit device of this preferred embodiment, for example quadrangular prism shape made of a ceramic material such as the material mainly composed of _{ZrO 2 · TiO 2 · MgNb 2} O 6 A dielectric member 1, a shielding conductor 2 surrounding the dielectric member 1 made of zinc-copper alloy with an inner wall gold-plated, and a support member made of polytetrafluoroethylene resin for fixing and supporting the dielectric member 1 3 and a pair of transmission lines 4 made of microstrip lines. The transmission line 4 functions as an input line or an output line depending on the direction in which the high-frequency signal flows.

  The transmission line 4 includes a transmission line substrate 6 made of polytetrafluoroethylene resin or the like, a strip conductor 5 made of a silver ribbon or the like formed on the upper surface of the transmission line substrate 6, and the transmission line substrate 6 on the back surface thereof. And a grounding conductor layer 9 supported from the outside. The ground conductor layer 9 is constituted by a part of the shielding conductor 2. Each transmission line 4 passes through a part of the shielding conductor 2 and is inserted into a region surrounded by the shielding conductor. That is, a window is opened in a part of the side wall perpendicular to the longitudinal direction of the shielding conductor 2, the transmission line 4 is inserted, and the upper surface of the transmission line 4 is covered with the insulator 7 in the window portion. This insulator 7 is for preventing the strip conductor 5 on the transmission line substrate 6 from being short-circuited to the shielding conductor 2. Inside the shield conductor 2, the tip end of the strip conductor 5 protrudes outside the insulator substrate 6, and the tip end faces the side surface perpendicular to the longitudinal direction of the dielectric member 1 to form the coupling probe portion 8. ing. The coupling probe unit 8 has an input coupling function or an output coupling function with the dielectric member 1 in accordance with the direction in which the high-frequency signal flows.

Although not shown, this preferred embodiment and other reference embodiment to be described later, in the first embodiment and the second embodiment, the transmission line 4, the various circuits mounted on the circuit board (amplifier and sound Conversion circuit, image conversion circuit) and the like.

In the case of this reference embodiment, the ground conductor layer 9 which is also a part of the shield conductor 2 serves as a ground plane of the transmission line 4. Therefore, in order to connect the transmission line 4 and the external circuit, it is only necessary to apply a signal voltage between the strip conductor 5 and the ground conductor layer 9, so that the loss of the signal can be suppressed to be small. it can.

In the configuration of the high-frequency circuit device of this preferred embodiment, the dielectric member 1, by appropriately selecting the shape and material of the shielding conductor 2 and the support member 3, the dielectric member 1 is referred to as TM ₁₁ [delta] mode in the rectangular cross-section resonator resonance it is possible to resonate in the mode, the high-frequency circuit device of this preferred embodiment, it is possible to realize the TM ₁₁ [delta] mode resonator. Then, a high-frequency circuit element of this preferred embodiment, can be used as a bandpass filter for one step.

Here, the TM ₁₁ δ mode in a rectangular cross-section resonator using a dielectric member having a rectangular cross section is equivalent to the TM ₀₁ δ mode in a circular cross-section resonator using a cylindrical dielectric member. This is because the first two subscripts (in this case, “11” or “01”) in the mode designation are based on the periodicity of the electromagnetic field in the direction of each side of the rectangular cross section in the rectangular cross section resonator. On the other hand, the circular cross-section resonator is based on the periodicity of the electromagnetic field in the circumferential direction and the radial direction of the cross-sectional circle.

(Second reference form)
Figure 2 (a), (b) are respectively a perspective view and a cross-sectional view of a high-frequency circuit element according to a second referential embodiment of the present invention. As shown in FIGS. 2 (a) and 2 (b), in the high-frequency circuit element of the present reference embodiment, unlike the first reference embodiment, a window is opened in a part of the longer side wall of the shield conductor 2, and the transmission line 4 is inserted. The side surface of the coupling probe portion 8 of the strip conductor 5 is opposed to the side surface orthogonal to the longitudinal direction of the dielectric member 1. Other structures and obtained effects are basically the same as those in the first reference embodiment.

As shown in FIG. 2 (b), the pair of transmission lines 4 may not be inserted from the longer side walls of the shield conductor 2 facing each other, and both of them are inserted from the same side wall. The same effect as this reference embodiment can be exhibited.

-Specific example of the second reference form-
A high-frequency circuit element having the structure shown in FIGS. 2A and 2B was formed by the following procedure. Dielectric member 1 is a rectangular ceramic ceramic (ZrO ₂ · TiO ₂ · MgNb ₂ O ₆ as a main component, relative permittivity: 42.2, fQ value: 43000 GHz) having a size of 1 × 1 × 4 mm. The dielectric member 1 is prepared and fixed in a shield conductor 2 made of a zinc-copper alloy whose inner wall is gold-plated. The dimension of the inner wall of the shielding conductor 2 is 2 × 2 × 10 mm. At that time, polytetrafluoroethylene resin was used as the support member 3 to fill the gap between the shield conductor 2 and the dielectric member 1. The transmission line 4 is formed by placing a strip conductor 5 made of a silver ribbon (thickness: 0.1 mm, width: about 1 mm) on a transmission line substrate 6 made of polytetrafluoroethylene resin. The strip conductor 5 is extended to the inside of the shield conductor 2 off the transmission line substrate 6, and this extension portion is used as a coupling probe portion 8.

FIG. 3 shows frequency characteristics (transmission characteristics) of insertion loss of the high-frequency circuit element of this example, which is simulated by electromagnetic field analysis. From the figure, it can be seen that a fundamental resonance mode exists at about 26 GHz. Analysis of the electric field distribution confirmed that this mode is a TM ₁₁ δ mode, which confirmed that this high-frequency circuit element operates as a resonant circuit (resonator).

FIG. 4 is actual measurement data of frequency characteristics of insertion loss of the prototype high frequency circuit element of this specific example. The data shown in the figure is in good agreement with the simulation result by the electromagnetic field analysis shown in FIG. 3 including the higher-order resonance mode. The actually measured no-load Q value was 870. This measurement was performed according to the following procedure. The vicinity of the peak of the TM ₁₁ δ mode in FIG. 4 is expanded to measure the peak frequency f 0, the insertion loss L 0 (dB), and the frequencies f 1 and f 2 at which the loss is L 0 +3 (dB) on both sides of the peak. Then, these values are expressed by the following formula: Qu = {f0 / | f1-f2 |} [1 / {1-10- ^{L0 / 20} }]
The unloaded Q value (Qu) was calculated by substituting

  Further, it has been confirmed that the actual measurement value of the unloaded Q value (Qu) when using the ceramic material of this specific example is improved to about 1000 by finely adjusting the structure of the high-frequency circuit element.

  As will be described later, it has been found that the use of other low-loss ceramic materials further improves the unloaded Q value.

When the Q value of the half-wave resonator by conventional microstrip line is considered to be the order of 100, measured values of these unloaded Q value from very high, the high-frequency circuit device of this preferred embodiment, It has been demonstrated that a very low loss resonant circuit can be constructed. In particular, when applied to circuit elements such as a resonator and a filter in the millimeter wave band, the effect is more exhibited.

This specific example is a specific example of the structure of the second reference form, but substantially the same result is obtained for the structure of the first reference form.

(Third reference form)
Figure 5 is a longitudinal sectional view of a high-frequency circuit device according to a third referential embodiment of the present invention. As shown in FIG. 5, the high-frequency circuit device of the present reference embodiment, the interior of the shielding conductor 2, two dielectric members 1a, is configured by arranging side by side in series in the longitudinal direction substantially at the same height position 1b Yes. The other basic structure is basically the same as the structure of the high-frequency circuit element in the first reference embodiment shown in FIG.

High-frequency circuit element of this preferred embodiment, as has been confirmed by the following specific examples, it can function as a band pass filter of two stage low loss.

-Specific example of the third reference form-
A high frequency circuit element having the structure shown in FIG. 5 was formed by the following procedure. As the dielectric members 1a and 1b, a rectangular pillar dielectric ceramics of a size 1 × 1 × 4 mm (material mainly composed of ZrO ₂ · TiO ₂ · MgNb ₂ O ₆ , relative permittivity: 42.2, fQ value: 43000 GHz 2), and these dielectric members 1a and 1b are fixed in the shield conductor 2 made of zinc-copper alloy whose inner wall is gold-plated. The dimension of the inner wall of the shielding conductor 2 is 2 × 2 × 12 mm. At that time, polytetrafluoroethylene resin was used as the support member 3 to fill the gap between the shielding conductor 2 and the dielectric members 1a and 1b. The transmission line 4 is formed by placing a strip conductor 5 made of a silver ribbon (thickness: 0.1 mm, width: about 1 mm) on a transmission line substrate 6 made of polytetrafluoroethylene resin. The strip conductor 5 is extended to the inside of the shield conductor 2 off the transmission line substrate 6, and this extension portion is used as a coupling probe portion 8.

FIG. 6 shows frequency characteristics (transmission characteristics) of insertion loss of the high-frequency circuit element according to the specific example of the third reference embodiment simulated by electromagnetic field analysis. From this figure, it was confirmed that the high-frequency circuit element of this specific example (that is, the third reference embodiment) operates as a two-stage bandpass filter.

Incidentally, in the structure of the high-frequency circuit device of this preferred embodiment, as the high-frequency circuit element of the second reference embodiment (see FIG. 2), opening the window to a portion of the side wall of the longer of the shielding conductor 2, the transmission lines 4 insert, the side surface of the coupling probe portion 8 of the strip conductor 5, the dielectric member 1a, have a structure that is opposed to the side surface perpendicular to the longitudinal direction 1b, the can exert substantially the same effect as this preferred embodiment .

Instead of the two dielectric members according to this reference embodiment, it is also possible to arrange three or more dielectric members. That is, it can be used as a multistage bandpass filter.

(4th reference form)
Figure 7 (a), (b) are respectively a is a longitudinal sectional view and a cross-sectional view of a high-frequency circuit device according to a fourth reference embodiment of the present invention. In FIG. 7A, the position of the dielectric member 1 is indicated by a broken line. As shown in FIG. 7 (a), (b), in the high-frequency circuit element of this preferred embodiment, the strip conductor 5 and the transmission line substrate 6 constituting the transmission line 4 (microstrip line) is grounded shielding conductor 2 The conductor layer 9 is buried in a groove formed in parallel with the shorter side. That is, the strip conductor 5 and the transmission line substrate 6 are inserted in the groove of the ground conductor layer 9 directly below both ends of the dielectric member 1, and the tip end of the strip conductor 5 faces the lower surface of the dielectric member 1. . The structure of the other part of the high-frequency circuit device of this reference embodiment is basically the same as that of the first reference embodiment.

In the present reference embodiment, the tip portion of the strip conductor 5 located on the transmission line substrate 6 can be used as the coupling probe portion 8 as it is, so that in addition to the same effect as the first reference embodiment, the input / output coupling is performed. There is an advantage that the structure of the portion to perform is simplified.

In the structure of the high-frequency circuit device of this preferred embodiment, the positional relationship between the height position and lateral position of the transmission line substrate 6 and the dielectric member 1, it is possible to adjust the output of the focal含度. For example, the input / output coupling degree increases as the distance between the transmission line substrate 6 and the dielectric member 1 decreases and the two approach each other, and the input / output coupling increases as the transmission line substrate 6 approaches the center of the dielectric member 1. There is a tendency to decrease the degree. And the high frequency circuit element of this reference form functions as a resonator similarly to the 1st reference form, and can be used as a 1 step | paragraph band filter of a low loss.

The present in the reference embodiment has been described as being arranged one dielectric member, the third two dielectric members 1a as a reference embodiment, it may be arranged 1b or, three or more dielectric It is also possible to arrange the members. That is, it can be used as a two-stage or multistage bandpass filter.

(5th reference form)
Figure 8 is a cross-sectional view of a high-frequency circuit device according to a fifth reference embodiment of the present invention. In FIG. 8, the position of the dielectric member 1 is indicated by a broken line. As shown in FIG. 8, according to this reference embodiment in the high-frequency circuit element, the strip conductor 5 and the transmission line substrate 6 constituting the transmission line 4 (microstrip line) is, the shorter of the ground conductor layer 9 of the shielding conductor 2 It is embedded in a groove formed parallel to the side. That is, the strip conductor 5 and the transmission line substrate 6 are inserted in the groove of the ground conductor layer 9 directly below both ends of the dielectric member 1, and the tip end of the strip conductor 5 faces the lower surface of the dielectric member 1. . And in this reference form, the front-end | tip part 10 of the strip conductor 5 is bent at right angles planarly, the strip conductor 5 has an L-shaped shape, and the bent front-end | tip part 10 is mainly input / output. It functions as a binding probe 8. The structure of the other part of the high-frequency circuit device of this reference embodiment is basically the same as that of the first reference embodiment.

Also in the present reference embodiment, the tip portion of the strip conductor 5 located on the transmission line substrate 6 can be used as the coupling probe portion 8 as it is, so that the input / output coupling portion is performed as in the fourth reference embodiment. There is an advantage that the structure is simplified.

In particular, in this preferred embodiment, by bending in a direction infeed or coupling out tip which functions as a coupling probe is increased, it is possible to realize a resonator having a high efficiency. For example, if the length of the bent tip portion 10 is made longer, the length of the short side of the dielectric member 1 can be made longer. Therefore, the length of the input / output probe 8 facing the dielectric member is set as the fourth reference. It becomes possible to make it longer than the form. Therefore, the high-frequency circuit device of this preferred embodiment, by an electric field component and efficiently condensation resonant modes, it is possible to obtain a large input and output coupling than the fourth reference embodiment. Further, there is an advantage that the degree of condensation can be adjusted by the length L of the tip portion 10 while the positional relationship between the transmission line substrate 6 and the dielectric member 1 is fixed. And the high frequency circuit element of this reference form functions as a resonance circuit similarly to the 1st reference form, and can be used as a low loss 1 step | paragraph band pass filter.

-Specific example of the fifth reference form-
A high-frequency circuit element having the structure shown in FIG. 8 was formed by the following procedure. Dielectric member 1 is a rectangular ceramic ceramic (ZrO ₂ · TiO ₂ · MgNb ₂ O ₆ as a main component, relative permittivity: 42.2, fQ value: 43000 GHz) having a size of 1 × 1 × 4 mm. The dielectric member 1 is prepared and fixed in a shield conductor 2 made of a zinc-copper alloy whose inner wall is gold-plated. The dimension of the inner wall of the shielding conductor 2 is 2 × 2 × 12 mm. At that time, polytetrafluoroethylene resin was used as the support member 3 to fill the gap between the shield conductor 2 and the dielectric member 1. The transmission line 4 is obtained by placing a strip conductor 5 (characteristic impedance: 50Ω) made of a gold thin film (thickness: 10 μm, width: about 0.3 mm) on a transmission line substrate 6 made of an alumina sintered body. It forms and the length of the front-end | tip part 10 is set to Lmm.

  Actually, as a result of measurement by a network analyzer, it was confirmed that a resonance phenomenon occurred near 26 GHz, and it was confirmed that it can operate as a resonance circuit and can be used as a one-stage bandpass filter. The unloaded Q value of resonance was about 1000.

  FIG. 9 is a diagram showing a simulation result of the relationship between the length of the distal end portion 10 and the external Q value (Qe) representing the input / output coupling degree in the high-frequency circuit element of this example by three-dimensional electromagnetic field analysis. Since the external Q value Qe takes a smaller value as the input / output coupling is stronger, as can be seen from the figure, the external Q value Qe can be controlled over a wide range by the length L.

(Sixth reference form)
Figure 10 is a cross-sectional view of a high-frequency circuit device according to a sixth reference embodiment of the present invention. As shown in FIG. 10, the high-frequency circuit element of the present reference embodiment has two dielectric members 1a and 1b arranged in series in the longitudinal direction at substantially the same height in the shielding conductor 2 as in the third reference embodiment. arrangement and, and, as with the sixth reference embodiment has a structure in an L-shape formed by bending at right angles to the strip conductor 5 on the transmission line substrate 6. Other basic structure, the fifth basic and structure of the high-frequency circuit device according referential embodiment of shown in FIG 8 is the same.

High-frequency circuit element of this preferred embodiment, as has been confirmed by the following specific examples, it can function as a band pass filter of two stage low loss.

And according to the circuit element of this reference form, a big effect can be exhibited further by applying the joint structure of the 5th reference form to a multistage band pass filter. This is because, in a band-pass filter, normally, the input / output coupling degree is relatively large, and it is preferable that the coupling degree is accurately controlled in order to obtain a desired characteristic.

In this reference embodiment, an example of a high-frequency circuit element that functions as a two-stage band filter is shown. However, by using three or more dielectric members, it can be used as a multi-stage band filter of three or more stages. It is valid.

-Specific example of the sixth reference form-
A high-frequency circuit element having the structure shown in FIG. 10 was formed by the following procedure. As the dielectric members 1a and 1b, a rectangular pillar dielectric ceramics of a size 1 × 1 × 4 mm (material mainly composed of ZrO ₂ · TiO ₂ · MgNb ₂ O ₆ , relative permittivity: 42.2, fQ value: 43000 GHz 2), and these dielectric members 1a and 1b are fixed in the shield conductor 2 made of zinc-copper alloy whose inner wall is gold-plated. The dimension of the inner wall of the shielding conductor 2 is 2 × 2 × 12 mm. At that time, polytetrafluoroethylene resin was used as the support member 3 to fill the gap between the shielding conductor 2 and the dielectric members 1a and 1b. The transmission line 4 is obtained by placing a strip conductor 5 (characteristic impedance: 50Ω) made of a gold thin film (thickness: 10 μm, width: about 0.3 mm) on a transmission line substrate 6 made of an alumina sintered body. It forms and the length of the front-end | tip part 10 is set to Lmm.

  FIG. 11 is a diagram showing a result of simulating the relationship between the degree of coupling k between the dielectric members 1a and 1b and the distance d between the dielectric members 1a and 1b in this specific example. As can be seen from the figure, the coupling degree between the dielectric members (inter-stage coupling degree) can be set by the interval between the dielectric members. Actually, using the structure of the high-frequency circuit element of this specific example, a Chebyshev type filter with a center frequency of about 26 GHz and a relative bandwidth of 0.3% and an in-band ripple of 0.005 dB was designed and prototyped. From this filter specification, the required input / output coupling degree was calculated as Qe (external Q value) = 120 and inter-stage coupling degree k = 0.003. Based on the calculation results, it can be seen from FIGS. 9 and 11 that the proper tip length L = 0.7 mm and the interval d = 1.2 mm. did.

FIG. 12 is a diagram showing the frequency characteristics of the loss amount of the high-frequency circuit element prototyped as described above. It can be confirmed that the two-stage bandpass filter operates well. The insertion loss was about 1.2 dB. The filter of similar characteristics, be manufactured in a conventional microstripline resonator, the insertion loss that is estimated to be several dB several times the high-frequency circuit device of this embodiment, the present reference embodiment The effectiveness of the high-frequency circuit element is sufficiently confirmed.

(Seventh reference form)
Figure 13 is a cross-sectional view of a high-frequency circuit device according to a seventh reference embodiment of the present invention. In the first to sixth reference embodiment, while the high-frequency circuit device is provided with two transmission lines (microstrip line), as shown in FIG. 13, the high-frequency circuit device of the present reference embodiment, both end portions Has a structure in which the dielectric member 1 is coupled to one transmission line 4 formed of a passing microstrip line serving as an input / output terminal (input / output coupling probe). Here, the dielectric member 1 indicated by a broken line is disposed in the vicinity of the transmission line 4, and input / output coupling is performed by overlapping the electromagnetic field of the transmission line 4 and the electromagnetic field of the resonance mode of the dielectric member 1. Part of the energy of the high-frequency signal propagating through the line 4 is absorbed by the dielectric member 1. Therefore, in the structure of the high-frequency circuit element shown in FIG. 12, when the transmission characteristics between the two ends of the transmission line 4 are used as input / output terminals, the transmittance decreases in the vicinity of the resonance frequency of the dielectric member 1. It can be seen that the filter operates as a blocking filter (notch filter).

In the present reference embodiment shows the case the dielectric member 1 is one, by using a plurality of dielectric member 1, it is also effective when used as a multi-stage band-rejection filter.

(Eighth reference form)
Figure 14 is a cross-sectional view of a high-frequency circuit device according to an eighth reference embodiment of the present invention. As shown in FIG. 14, the high-frequency circuit device of this preferred embodiment, like the seventh reference embodiment, the one having both ends consist pass type microstrip line as the input and output terminals (input and output coupling probes) transmission The dielectric member 1 is coupled to the line 4. However, in the seventh reference embodiment, the strip conductor 5 is linear, whereas in the present reference embodiment, the strip conductor 7 has a bent portion 11 below the dielectric member 1. In this reference embodiment, in the vicinity of the transmission line 4, to place the dielectric member 1 shown by broken lines, and the electromagnetic field of the transmission line 4, the input-output coupling by overlapping of the electromagnetic field of the resonance mode of the dielectric member 1 made Thus, a part of the energy of the high-frequency signal propagating through the transmission line 4 is absorbed by the dielectric member 1. Therefore, in the structure of the high-frequency circuit element shown in FIG. 12, when the transmission characteristics between the two ends of the transmission line 4 are used as input / output terminals, the transmittance decreases in the vicinity of the resonance frequency of the dielectric member 1. Operates as a blocking filter (notch filter).

In addition, according to the high-frequency circuit device of this preferred embodiment, the strip conductor 5 extends in the longitudinal direction of the dielectric member 1 at the bent portion 11. Accordingly, the direction of the electromagnetic field in the resonance mode and the electromagnetic field in the transmission line 4 coincides with each other at the bent portion 11, so that a very large coupling is generated between the electromagnetic wave propagating through the transmission line 4 and the electromagnetic field in the resonance mode. As a result, a steeper band rejection characteristic can be obtained.

In the present reference embodiment shows the case the dielectric member 1 is one, by using a plurality of dielectric member 1, it is also effective when used as a multi-stage band-rejection filter.

-Specific example of the eighth reference form-
A high-frequency circuit element having the structure shown in FIG. 14 was formed by the following procedure. Dielectric member 1 is a rectangular ceramic ceramic (ZrO ₂ · TiO ₂ · MgNb ₂ O ₆ as a main component, relative permittivity: 42.2, fQ value: 43000 GHz) having a size of 1 × 1 × 4 mm. The dielectric member 1 is prepared and fixed in a shield conductor 2 made of a zinc-copper alloy whose inner wall is gold-plated. The dimension of the inner wall of the shielding conductor 2 is 2 × 2 × 10 mm. At that time, polytetrafluoroethylene resin was used as the support member 3 to fill the gap between the shield conductor 2 and the dielectric member 1. The transmission line 4 is obtained by placing a strip conductor 5 (characteristic impedance: 50Ω) made of a gold thin film (thickness: 10 μm, width: about 0.3 mm) on a transmission line substrate 6 made of an alumina sintered body. It forms and the length of the front-end | tip part 10 is set to Lmm.

FIG. 15 is a diagram showing the result of simulation of the frequency characteristics of insertion loss in the high-frequency circuit element of this example by electromagnetic field analysis. As can be seen from the figure, it can be seen that the high-frequency circuit element of this specific example operates as a band rejection filter in which the amount of attenuation increases greatly before and after the resonance frequency of the resonator, confirming the effectiveness of this reference embodiment. It was.

(Ninth Reference Form)
Figure 16 (a), (b) , (c) are respectively a cross-sectional view, longitudinal section perpendicular to the longitudinal sectional view and a longitudinal direction of the longitudinal direction of the high-frequency circuit device according to a ninth reference embodiment of the present invention FIG. As shown in FIG. 16 (a) ~ (c) , the high-frequency circuit device of this preferred embodiment, for example quadrangular prism shape made of a ceramic material such as the material mainly composed of _{ZrO 2 · TiO 2 · MgNb 2} O 6 The dielectric member 1, the shielding conductor 2 made of zinc-copper alloy with the inner wall gold-plated surrounding the dielectric member 1, the dielectric substrate 12 made of alumina or the like and supporting the dielectric member 1, and the microstrip line And a pair of transmission lines 4.

Here, in this reference embodiment, a groove 13 extending in the longitudinal direction is formed in the ground conductor layer 9, and the inside of the groove 13 is a space. Moreover, the inside of the shielding conductor 2 is also a space. The dielectric member 1 is placed on the dielectric substrate 12 above the groove 13. That is, in this reference embodiment, the dielectric substrate 12 functions as a support member that supports the dielectric member 1.

  The transmission line 4 includes a transmission line substrate 6, a strip conductor 5 made of a silver ribbon or the like formed on the upper surface of the transmission line substrate 6, and a ground conductor layer 9 that is a part of the shielding conductor 2. Has been. Each transmission line 4 passes through a part of the shielding conductor 2 and is inserted into a region surrounded by the shielding conductor. That is, a window is opened in a part of the side wall perpendicular to the longitudinal direction of the shielding conductor 2, the transmission line 4 is inserted, and the upper surface of the transmission line 4 is covered with the insulator 7 in the window portion. This insulator 7 is for preventing the strip conductor 5 on the transmission line substrate 6 from being short-circuited to the shielding conductor 2. Inside the shielding conductor 2, the strip conductor 5 extends on the dielectric substrate 12, and its tip portion 10 is bent in a substantially right angle to form an L shape. Thus, the distal end portion 10 of the strip conductor 5 faces the side surface extending in the longitudinal direction of the dielectric member 1, and the distal end portion 10 functions as the coupling probe portion 8.

Also in this preferred embodiment, the ground conductor layer 9 which is also a part of the shielding conductor 2, the ground plane of the transmission line 4. Therefore, in order to connect the transmission line 4 and the external circuit, it is only necessary to apply a signal voltage between the strip conductor 5 and the ground conductor layer 9, so that the loss of the signal can be suppressed to be small. it can.

In the configuration of the high-frequency circuit device of this preferred embodiment, the dielectric member 1, the shielding conductor 2, by selecting the shape of the dielectric substrate 12 and the groove 13 (and material) as appropriate, the dielectric member 1, TM in the rectangular cross-section resonator it is possible to resonate at a resonant mode called ₁₁ [delta] mode, the high-frequency circuit device of this preferred embodiment, it is possible to realize the TM ₁₁ [delta] mode resonator. And the high frequency circuit element of this reference form can be used as a 1 step | paragraph band pass filter.

In particular, the high-frequency circuit device of this preferred embodiment, as can be seen from FIG. 16, and it is possible to integrate the transmission line substrate 6 and the dielectric substrate 12, dielectric member 1 by a dielectric substrate 12 fixed Therefore, the support member 3 in the first to eighth reference forms is unnecessary.

Also in the present reference embodiment, the transmission line 4 may be inserted from the front-rear direction of the dielectric member 1 as in the first reference embodiment.

Further, the groove 12 is not always necessary. Eliminates the grooves 12, the back surface of the dielectric substrate 12 be in contact directly the shielding housing 2 of the inner wall, resonator shown the same operation as this preferred embodiment can be obtained. However, if the shielding conductor 2 is in contact with the back surface of the dielectric substrate 12 located immediately below the dielectric member 1, a large high-frequency current may flow there, leading to an increase in loss. On the other hand, as shown in FIG. 16, by providing the groove 13, loss can be reduced.

In the high frequency circuit element of this preferred embodiment shown in FIG. 16 (a) ~ (c) , the shape of the coupling probe portion 8 is not necessarily the end portion 10 of the strip conductor 5 bent into an L-shape As shown in FIG. 1C and FIG. 2B, the front end portion of the linear strip conductor 5 can also function as the coupling probe portion 8. Further, the tip portions 10 of the two strip conductors 5 may be bent in the same direction or in directions away from each other.

  It is also effective to form the coupling probe portion 8 on the back surface side of the dielectric substrate 12. In this case, it is possible to increase the amount of coupling by forming the coupling probe portion 8 directly below the dielectric member 1. However, in this case, in order to connect to the strip conductor 5, the strip conductor 5 on the front surface of the dielectric substrate 12 and the coupling probe portion 8 on the back surface are capacitively coupled via a capacitor, or the transmission line substrate 6 is connected. It is necessary to form the strip conductor 5 on the lower surface.

Also in the structure of the present reference embodiment, as in the seventh or eighth reference embodiment (see FIG. 13 or FIG. 14), the dielectric member 1 with respect to the transmission transmission line 4 whose both ends are input / output terminals. Can be used. In that case, both ends of the transmission line 4 can be operated as a so-called band rejection filter using the input / output terminals.

In this reference embodiment, it is more desirable to use a material having a dielectric constant lower than that of the dielectric member 1 as the dielectric substrate 12. For example, when a material having a relative dielectric constant of 20 or more is used as the dielectric member 1, it is effective in terms of characteristics and structure to use a plate dielectric having a relatively low dielectric constant such as alumina as the dielectric substrate 12. is there.

(10th reference form)
FIGS. 17A and 17B are respectively a perspective view of the high-frequency circuit device according to the tenth reference embodiment of the present invention viewed obliquely from above and a perspective view viewed obliquely from below. 18A and 18B are a longitudinal sectional view and a transverse sectional view, respectively, of the high-frequency circuit device according to the tenth reference embodiment.

As shown in FIG. 17 (a), (b) and FIG. 18 (a), (b) , the high-frequency circuit element of this preferred embodiment is the dielectric member 1 of square pillar shape comprised of an ceramic material is provided The dielectric member 1 is fixed and supported by a support member 3 made of polytetrafluoroethylene resin or the like. A conductor coating 17 is formed on the outer surface of the support member 3 by copper plating or the like. Further, the transmission line 4 is formed by the strip conductor 5 formed by separating a part of the conductor film 17 and the remaining conductor film 17. The bottom surface of the dielectric member 1 and the strip conductor 5 are opposed to each other inside the conductor coating 17, and input / output coupling with the dielectric member 1 is performed by the strip conductor 5.

For this preferred embodiment, in the region Rco, coplanar line is constituted by the strip conductor 5 and the conductor film 17. Accordingly, when connecting to an external circuit, a signal voltage may be applied between the strip conductor 5 and the conductor coating 17.

In the configuration of the high-frequency circuit device of this preferred embodiment, the dielectric member 1, by appropriately selecting the shape and material of the conductor film 17 and the support member 3, the dielectric member 1 is referred to as TM ₁₁ [delta] mode in the rectangular cross-section resonator resonance it is possible to resonate in the mode, the high-frequency circuit device of this preferred embodiment, it is possible to realize the TM ₁₁ [delta] mode resonator. And the high frequency circuit element of this reference form can be used as a 1 step | paragraph band pass filter.

In addition, the high-frequency circuit element of this preferred embodiment, a conductor film 17 is a strip conductor 5 and the ground plane which forms the transmission line 4 can be formed on the same surface, it becomes easy to perform surface mounting.

Also in the high-frequency circuit device of this preferred embodiment, as in the second referential embodiment (see FIG. 2), the transmission line 4 with respect to the dielectric member is formed in the lateral direction, that is shown in FIG. 17 (a) It is also possible to provide the strip conductor 5 on the upper surface or the lower surface of the quadrangular column.

(First Embodiment)
19A, 19B, and 19C are a perspective view, a longitudinal sectional view, and a transverse sectional view, respectively, of the high-frequency circuit device according to the first embodiment of the present invention. 20A and 20B are respectively a top view and a back view of the dielectric substrate of the high-frequency circuit device according to the first embodiment. As shown in FIGS. 19A to 19C and FIGS. 20A and 20B, a quadrangular prism-shaped dielectric member 1 made of a ceramic material or the like is disposed in the shielding conductor 2, and is supported by the support member 3. It is fixed. A space between the dielectric member 1 and the shielding conductor 2 is filled with a support member 3. Also, a conductor film 17 made of a metal film constituting a part of the shielding conductor 2 is formed on the upper surface of the dielectric substrate 20 made of a ceramic material or the like, and a ground plane that is a ground plane is formed on the back surface of the dielectric substrate 20. A conductor layer 9 is formed.

  The transmission line 4 includes a dielectric substrate 20, a strip conductor 5 made of a metal film separated from the conductor coating 17, and a ground conductor layer 9 that supports the dielectric substrate 20 from the back surface. The conductor coating 17 and the ground conductor layer 9 are electrically connected to each other by a via hole 21 that penetrates the dielectric substrate 20. Each transmission line 4 passes through a part of the shielding conductor 2 and is inserted into a region surrounded by the shielding conductor 2. That is, a window is opened in a part of the side wall perpendicular to the longitudinal direction of the shielding conductor 2, the transmission line 4 is inserted, and the upper surface of the transmission line 4 is covered with the insulator 7 in the window portion. This insulator 7 is for preventing the strip conductor 5 on the dielectric substrate 20 from being short-circuited to the shielding conductor 2. Inside the shield conductor 2, the tip end portion of the strip conductor 5 faces the lower surface (and the side surface orthogonal to the longitudinal direction) of the dielectric member 1 on the dielectric substrate 20 and functions as the coupling probe portion 8. .

  In the present embodiment, the ground conductor layer 9 that is also a part of the shield conductor 2 serves as a ground plane of the transmission line 4. Therefore, in order to connect the transmission line 4 and the external circuit, it is only necessary to apply a signal voltage between the strip conductor 5 and the ground conductor layer 9, so that the loss of the signal can be suppressed to be small. it can.

In the configuration of the high-frequency circuit element according to the present embodiment, the dielectric member 1 is a TM ₁₁ in a rectangular cross-section resonator by appropriately selecting the shape and material of the dielectric member 1, the shielding conductor 2, the dielectric substrate 20, and the support member 3. It is possible to resonate in a resonance mode called δ mode, and a TM ₁₁ δ mode resonator can be realized by the high-frequency circuit element of this embodiment. The high-frequency circuit element of this embodiment functions as a low-loss one-stage bandpass filter.

  Moreover, according to the high frequency circuit element of this embodiment, since the strip conductor 5 and the conductor film 17 can be formed from a common metal film, it is possible to reduce the number of assembled parts, and thus performance due to variations in each part. There is an advantage that variation in the number can be suppressed.

Also in this configuration, as shown in Figure 2 of the reference embodiment 1, the transmission line 4 with respect to the dielectric member 1, can be formed in the lateral direction.

(The first 1 of the reference embodiment)
Figure 21 (a), (b) are respectively a is a cross-sectional view and a longitudinal sectional view of a high-frequency circuit element according to a first 1 of the reference embodiment of the present invention. As shown in FIG. 21 (a), (b) , the high-frequency circuit device of the present reference embodiment, the interior of the shielding conductor 2, two dielectric members 1a, side by side in the longitudinal direction in series at approximately the same height position 1b It is configured by arranging. Then, two frequency adjusting screws 14 arranged so as to pass through the side wall perpendicular to the longitudinal direction of the shielding conductor 2 and to face one end face of each of the dielectric members 1a and 1b, and the upper wall of the shielding conductor 2 are penetrated. The gap between the dielectric members 1a and 1b passing through the upper wall of the shielding conductor 2 and the two frequency adjusting screws 15 disposed so as to face the substantially central portion of the upper surface of the dielectric members 1a and 1b. And an inter-stage coupling degree adjusting screw 16 arranged so as to face each other. In addition, the support member 3 is removed around the screws 14, 15, 16 so that the screws 14, 15, 16 can be inserted into the shield conductor 2 as necessary. The other basic structure is basically the same as the structure of the high-frequency circuit element in the fourth reference embodiment shown in FIGS. 7 (a) and 7 (b).

From the structure of the high-frequency circuit device of this preferred embodiment, the dielectric member 1a, the electromagnetic field distribution around the 1b becomes adjustable. That is, the resonance frequency of the resonator can be adjusted by the insertion amount of the frequency adjustment screws 14 and 15, and the coupling degree between the resonators can be adjusted by the insertion amount of the interstage coupling adjustment screw 16. Therefore, it is possible to recover the deterioration of characteristics due to dimensional errors in processing and assembly that occur in the manufacturing process by adjustment after manufacturing the high-frequency circuit element, and it is possible to dramatically improve the manufacturing efficiency.

In this reference embodiment, the structure of the two-stage bandpass filter is taken as an example, but the present invention is not limited to this structure, and can be applied to a one-stage filter or a three-stage or more filter.

  However, the adjustment of the frequency and the adjustment of the interstage coupling can be performed by providing a rod-like member having the same function as the screw, a flat plate-like member or the like, not necessarily a screw.

Also in the first to reference embodiment and the first embodiment of the first 0, by a member such as a screw, adjustment of the resonant frequency, it is possible to adjust the inter-stage coupling degree, even in that case, the The same effect as the reference form can be exhibited.

Incidentally, as for the axial position and screw the frequency adjustment screw, as in the frequency adjustment screws 14, when the screw made to face the respective ends of the dielectric member 1a, 1b has been described in this preferred embodiment The frequency can be adjusted effectively, but on the other hand, when three or more dielectric members are provided, it can be applied only to the frequency adjustment of the dielectric members at both ends. Therefore, it is effective to provide the adjusting screw in the direction perpendicular to each dielectric member, like the frequency adjusting screw 15, more precisely in the direction perpendicular to the direction of the TM mode electric field. Further, the insertion position of the frequency adjusting screw portion where the electric field of the dielectric member is strongest, i.e., in this preferred embodiment it is most effective to oppose the adjusting screw near the center of the dielectric member 1a, 1b. In this case, there is an advantage that it can be applied to a high-frequency circuit element in which multistage dielectric members of three or more stages are arranged.

- Specific example of the first one reference embodiment -
High frequency circuit elements having the structure shown in FIGS. 21A and 21B were formed in the following procedure. As the dielectric members 1a and 1b, a rectangular pillar dielectric ceramics of a size 1 × 1 × 4 mm (material mainly composed of ZrO ₂ · TiO ₂ · MgNb ₂ O ₆ , relative permittivity: 42.2, fQ value: 43000 GHz 2), and these dielectric members 1a and 1b are fixed in the shield conductor 2 made of zinc-copper alloy whose inner wall is gold-plated. The dimension of the inner wall of the shielding conductor 2 is 2 × 2 × 12 mm. At that time, polytetrafluoroethylene resin was used as the support member 3 to fill the gap between the shielding conductor 2 and the dielectric members 1a and 1b. The transmission line 4 is formed by placing a strip conductor 5 (characteristic impedance: 50Ω) made of a gold thin film (thickness: 10 μm, width: about 0.3 mm) on a transmission line substrate 6 made of an alumina sintered body. Then, the strip conductor 5 is extended to the inside of the shield conductor 2 on the transmission line substrate 6, and the tip portion is bent in the longitudinal direction of the dielectric member to make the tip portion a coupling probe portion 8. Further, the frequency adjusting screw 14 is used. , 15 and interstage coupling adjusting screws 16 were used with screws having a screw standard of M1.6, and the end surfaces of the screws were processed to be flat and the entire surface was plated with gold.

  22 to 24 are diagrams showing a resonance frequency adjusting function performed by the network analyzer for the high-frequency circuit device of this example. FIG. 22 is a diagram showing the relationship between the resonance frequency of the high-frequency circuit element of this example and the amount of insertion of the frequency adjusting screw 14. FIG. 23 is a diagram showing the relationship between the resonance frequency of the high-frequency circuit element of this example and the amount of insertion of the frequency adjusting screw 15. FIG. 24 is a diagram showing the relationship between the resonance frequency of the high-frequency circuit element of this example and the amount of insertion of the interstage coupling degree adjusting screw 16.

  As can be seen from FIGS. 22 to 24, it is possible to finely adjust the resonance frequency and the interstage coupling degree by the insertion amount of each screw.

(The first 2 of the reference form)
Figure 25 (a), (b) are respectively a perspective view and a cross-sectional view of a high-frequency circuit module according to the first and second reference embodiment of the present invention. This reference embodiment has a structure in which two high-frequency circuit elements of the first reference embodiment are combined with a phase circuit interposed therebetween. That is, two high-frequency circuit elements A and B having different center frequencies are input / output coupled to two branch portions of the phase shift circuit 18 having an appropriate amount of phase shift, thereby sharing signals having different frequencies. It is the example which comprised the container. The phase circuit 18 includes a ground conductor layer 9, a phase circuit board 19 embedded in a recess of the ground conductor layer 9, and a microstrip formed by a strip conductor 5 b made of a metal film provided on the phase circuit board 19. The main part of the conductor strip 5b is connected to the antenna. The other basic structure is basically the same as the structure of the high-frequency circuit element in the first reference embodiment shown in FIGS. For example, the high-frequency circuit element B (or A) can transmit a high-frequency signal to the outside via an antenna, and the high-frequency circuit element A (or B) can receive the high-frequency signal from the outside via the antenna. Yes.

  Each high-frequency circuit element is connected to a processing circuit by a switch, and receives processing such as signal amplification and conversion to sound / images by the processing circuit.

According to the high-frequency circuit module of this preferred embodiment, since with intervening phase circuit provided with a plurality of high-frequency circuit device, i.e., small, low-loss duplexer (the multiplexing-separate different transmitting and receiving signals in frequency bands) The functions that can be realized and that have been realized in the conventional waveguide or the like are realized on the circuit board.

For example, when a phase circuit is connected to an antenna, transmission / reception can be performed. In particular, even when two high-frequency circuit elements having different center frequencies are combined with a phase circuit interposed therebetween, it is possible to simultaneously transmit and receive while maintaining the effect of the first reference embodiment.

In this reference embodiment, an example of a duplexer having a single-stage × one-stage dielectric member is shown. However, by using a plurality of dielectric members of at least one band-pass filter (high-frequency circuit element A or B), multiple stages are used. It is also effective to use as a duplexer having a bandpass filter.

- modification of the first and second reference embodiment -
Figure 26 (a), (b) are respectively a perspective view and a cross-sectional view of a high-frequency circuit module according to a modification of the first and second reference embodiment. In this modification, three dielectric members 1a to 1c are arranged in series in the longitudinal direction at the same height position on the high-frequency circuit element A, and three dielectric members 1d to 1f are arranged in the longitudinal direction at the same height position on the high-frequency circuit element B. Are arranged in series.

  And the high frequency circuit module which has a structure shown to Fig.26 (a), (b) was formed in the following procedures. In the high-frequency circuit element A (bandpass filter), as dielectric members 1a and 1c, dielectric ceramics (relative permittivity: 21, fQ value: 70000 GHz) having a size of 1 × 1 × 5.6 mm are used as dielectric members. As 1b, square pillar dielectric ceramics (relative permittivity: 21, fQ value: 70000 GHz) having a size of 1 × 1 × 5.4 mm are prepared, and these dielectric members 1a to 1c are made of zinc whose inner walls are plated with gold. -It fixes in the shield conductor 2a made from a copper alloy. The dimension of the inner wall of the shielding conductor 2a is 3 × 3 × 24.1 mm.

  Further, in the high-frequency circuit element B (bandpass filter), as the dielectric members 1d and 1f, dielectric ceramics of a square pillar having a size of 1 × 1 × 5.8 mm (relative permittivity: 21, fQ value: 70000 GHz) As the dielectric member 1b, square pillar dielectric ceramics (relative permittivity: 21, fQ value: 70000 GHz) having a size of 1 × 1 × 5.6 mm are prepared, and the inner walls of these dielectric members 1d to 1f are gold-plated. It is fixed in a shield conductor 2b made of zinc-copper alloy. The dimension of the inner wall of the shielding conductor 2b is 3 × 3 × 25.7 mm.

  Then, polytetrafluoroethylene resin was used as the support members 3a and 3b to fill the gap between the shield conductor 2a and the dielectric members 1a to 1c and the gap between the shield conductor 2b and the dielectric members 1d to 1f. The transmission line 4 is obtained by placing strip conductors 5a and 5c made of a gold thin film (thickness: 10 μm, width: about 0.3 mm (characteristic impedance: 50Ω)) on a transmission line substrate 6 made of an alumina sintered body. The strip conductors 5a and 5c are extended to the inside of the shield conductors 2a and 2b on the transmission line substrate 6, and the tip portion is used as the coupling probe portion 8.

  Further, the phase shift circuit 18 forms a strip conductor 5b made of a gold thin film patterned on a phase shift circuit substrate 19 made of a polytetrafluoroethylene resin substrate, and has a T-shape consisting of a backbone portion and two branch portions. The pattern is formed. The width of the strip conductor 5b was set to 0.5 mm so that the characteristic impedance was around 50Ω.

  The phase shift circuit 18 has a function of branching and synthesizing by electrically setting the other crossband band of the branch to be almost open by appropriately setting the length of the strip conductor.

FIGS. 27A and 27B are diagrams illustrating the frequency characteristics of the loss amount on the transmission side and the frequency characteristics of the loss amount on the reception side, respectively. Figures 27 (a), (b) , the high-frequency circuit module of the present reference embodiment, it can be confirmed that work well as a duplexer three stages × 3 stages. The insertion loss was about 2 dB, and the crossband attenuation was about 53 to 55 dB.

Further, as shown in Figure 1 also Reference Embodiment 1 in the present configuration, the transmission line 4 dielectric member 1a, against 1b, it is also possible to respectively arranged in the longitudinal direction in series.

Figure 28 (a), (b) is a cross-sectional view respectively showing a preferred structure of the phase circuit 18 in the first and second reference embodiment or modification. As shown in FIG. 28A or FIG. 28B, the transmission line 4 and the phase shift circuit 18 of the high-frequency circuit elements A and B (band filters) are integrated on the same phase circuit board 19. In general, reflection due to mismatching that occurs in the connection portion can be eliminated.

Further, in this reference embodiment, an example of a two-wave duplexer that combines and separates transmission / reception signals has been shown, but the high-frequency circuit module of the present invention is not limited to the structure of this reference embodiment, and three or more waves are used. This is also effective when combining / separating signals in the frequency band. In this case, the pattern of the phase circuit 18 on the phase shift circuit board 19 may be a pattern branched by the number of frequency bands to be combined / separated. When the number of branches is large, a combination of a plurality of two branch lines as shown in FIGS. 28 (a) and 28 (b) and a branch line is formed by connecting a similar branch line to the end of the branch. It is also effective to use. In any case, the operation as a duplexer can be realized by adjusting the amount of phase change (electric length) from the branch portion to each filter (high frequency circuit element).

(Second Embodiment)
  FIG. 29 is a longitudinal section of a high-frequency circuit device according to the second embodiment of the present invention, in which the dielectric member 1 according to the first reference embodiment is formed so that the section expands from the end toward the center. FIG. Thus, by increasing the cross-sectional dimension near the center of the dielectric member 1, the length of the dielectric member (resonator) can be shortened. This is because the TM mode electric field strength is the largest near the center of the dielectric member, so that the effective dielectric constant of the resonance mode is increased by increasing the cross-section in the vicinity. And the shape of such a dielectric member is applicable also to 2nd-12th reference form and 1st Embodiment (a modification is included).

(Other embodiments)
In each of the above embodiments and each of the above reference embodiments , the TM ₁₁ δ mode in a rectangular prism-shaped dielectric member having a rectangular cross section is used as the dielectric member 1, but the present invention is not limited to such a structure. Even when a cylindrical dielectric member having a circular cross section is used, the same effects as those of the above embodiments and the above reference embodiments can be exhibited. In this case, it is customary to use the designation TM ₀₁ δ as the resonance mode. Also, the cross-sectional shape of the dielectric member is described by taking a dielectric member having a constant shape as an example in the length direction, that is, the direction of the electric field inside the dielectric member, but the cross-sectional shape is partially changed. It is effective as well .

Also, in embodiments of the respective reference embodiment of the first embodiment except for the first and second reference embodiment, the material (dielectric to the dielectric member 1 composed mainly of _{ZrO 2 · TiO 2 · MgNb 2} O 6 (Rate: 42.2, fQ value: 43000 GHz), it is not necessarily limited to this material. If a material having a dielectric constant higher than that of the support member 3 is used as the dielectric member 1, the TM ₁₁ δ mode exists, and the effects of the present invention can be reliably exhibited.

  Further, since the Q value of the resonator is greatly influenced by the dielectric loss of the material constituting the dielectric member 1, it is preferable to use a material with a small loss (a material having a large fQ value) as the dielectric member 1. When a material having a high rate is used, the length and thickness of the dielectric member 1 necessary for obtaining the same resonance frequency may be small, so that the resonator can be miniaturized.

  FIG. 30 is a table showing the measured values of the unloaded Q and the dimensions of the dielectric member and the shielding conductor at 26 GHz when three types of ceramic materials are used.

  If a dielectric member 1 having a lower dielectric constant, such as alumina, and having a small loss is used, a resonator having a large unloaded Q value can be obtained although the size of the resonator is increased.

  As the support member 3 in each of the above specific examples, polytetrafluoroethylene having a relative dielectric constant of 2 is given as an example. However, the present invention is not limited to this, and any material that can support and fix the dielectric member 1 can be used. Good. However, the dielectric constant of the support member 3 is preferably lower than that of the dielectric member 1. Actually, when a dielectric member having a relative dielectric constant of 20 or more is used as the dielectric member 1, more favorable characteristics can be obtained if a material having a relative dielectric constant of approximately 15 or less is used as the support member 3.

In the each reference embodiment and the first and second embodiments except for the ninth reference embodiment, although the support member 3 has been described configuration when being filled in the gap in the shielding conductor 2, necessarily this It is not necessary to limit to such a configuration, and the dielectric member support structure as in the ninth reference embodiment can also be adopted in other reference forms, the first embodiment, and the second embodiment.

In addition, by connecting the band pass filter and the band rejection filter (notch filter) exemplified in each of the above embodiments and each of the above reference embodiments with a branch line made of a microstrip line or the like, transmission / reception signals having different frequencies can be obtained. A duplexer to be separated can be configured. In this case, for example, two band pass filters having a center frequency near the transmission frequency and the reception frequency are input / output coupled to the branch portion of the branch transmission line having an appropriate phase change amount. Further, in order to satisfy a desired specification, a band-stop filter can be connected in series with a band-pass filter to increase cross-band attenuation as necessary.

Further, in each of the above embodiments and each of the above reference embodiments , the case where the design frequency band is the 26 GHz band has been described as an example, but it is not necessary to be limited to this frequency band, and the dielectric member is adapted to a desired frequency. If the dimensions are changed, it can be applied in a wide frequency range. In particular, when a material having a dielectric constant of about 20 to 40 is used for the resonator, the width of the resonator falls within the range of about 0.1 mm to 10 mm in the range of about 5 GHz to 100 GHz, so the structure of the present invention is used. Even in this case, the dimensions of the high-frequency circuit element are appropriate and convenient. In particular, in the range of 20 to 70 GHz, by using the low-loss ceramic material shown in FIG. 30, it exhibits a high no-load Q value compared with other structures of dielectric members, and is mounted on a circuit board. The effect of the present invention is very large because it is small enough to do so and does not require special precision processing.

Furthermore, in each of the above embodiments and each of the above reference embodiments , the two transmission lines 4 are provided on the common ground conductor layer 9, but the transmission line in the high-frequency circuit element of the present invention is necessarily applied. The structure is not limited.

  31A, 31B, and 31C are plan views showing a structural example in the case where a pair of transmission lines is formed on the ground conductor layer. As shown in FIGS. 31 (a) to 31 (c), as long as the portion that becomes the coupling probe 10 is opposed to any part of the dielectric member 1, it has an input / output coupling function. Effects can be exhibited. When a coplanar line is configured, the ground conductor layer 9 shown in FIGS. 31A to 31C is formed on the same side as the strip conductor 5 on the transmission line substrate 6. Further, the transmission line substrate 6 and the ground conductor layer 9 do not have to exist in the portion functioning as the coupling probe 10.

Further, in each of the above embodiments and each of the above reference embodiments , the example in which the microstrip line or the coplanar line is used as the transmission line 4 has been described. However, the transmission line 4 in the high frequency circuit element or high frequency circuit module of the present invention is It is not limited to each embodiment and each reference form .

32 (a) to (i) are cross-sectional views showing examples of transmission lines that can be used in the high-frequency circuit element or high-frequency circuit module of the present invention. 32A to 32I, as in each of the above embodiments and each of the above reference embodiments , 5 is an example of a strip conductor, 6 is a transmission line substrate, and 9 is an example of a ground conductor layer. 32A shows an example of the most general microstrip line, FIG. 32B shows an example of a multi-wire microstrip line, FIG. 32C shows an example of a coplanar line, and FIG. (C) shows an example of a TFMS (Thin Film Microstrip) line, FIG. 32 (d) shows an example of an inverted TFMS line, FIG. 32 (e) shows an example of an inverted TFMS line, and FIG. ) Shows an example of a wide-surface coupled TFMS line, FIG. 32 (g) shows an example of a TFMS line with slits, FIG. 32 (h) shows an example of a microwire line, and FIG. 32 (i) shows a strip line. An example is shown. The high-frequency circuit element or the high-frequency circuit module of the present invention can use any one structure shown in FIGS. 32A to 32I or a transmission line in which a plurality of these structures are mixed.

The present invention
1. 1. High-frequency circuit section in the transmitter / receiver of FWA (Fixed Wireless Access) system using millimeter wave or microwave 2. Mobile communication (cell phone) system terminal and base station high-frequency circuit part 3. Circuit for handling high frequency modulation signals in optical communication systems 4. High-frequency circuit part of the wireless LAN device 5. High-frequency circuit part of inter-vehicle communication and road-vehicle communication system It can be used for the high frequency circuit portion of a millimeter wave radar system.

(A), (b), (c) is a perspective view, a longitudinal cross-sectional view, and a transverse cross-sectional view, respectively, of the high-frequency circuit device according to the first reference embodiment of the present invention. (A), (b) is a perspective view and a cross-sectional view, respectively, of a high-frequency circuit element according to a second reference embodiment of the present invention. It is the frequency characteristic (transmission characteristic) of the insertion loss of the high frequency circuit element of the specific example of the 2nd reference form simulated by electromagnetic field analysis. It is the measurement data of the frequency characteristic of the insertion loss of the high frequency circuit element of the specific example of the 2nd reference form made as an experiment. It is a longitudinal cross-sectional view of the high frequency circuit element which concerns on the 3rd reference form of this invention. It is the frequency characteristic (transmission characteristic) of the insertion loss of the high frequency circuit element which concerns on the specific example of the 3rd reference form simulated by electromagnetic field analysis. (A), (b) is the longitudinal cross-sectional view and horizontal cross-sectional view of the high frequency circuit element which respectively concern on the 4th reference form of this invention in order. It is a cross-sectional view of the high frequency circuit element which concerns on the 5th reference form of this invention. It is a figure which shows the result of having simulated the relationship between the length of the front-end | tip part in the specific example of the high frequency circuit element of a 5th reference form, and the external Q value (Qe) showing an input-output coupling degree by three-dimensional electromagnetic field analysis. It is a cross-sectional view of the high frequency circuit element which concerns on the 6th reference form of this invention. It is a figure which shows the result of having simulated the relationship between the coupling degree k between two dielectric members and the space | interval d of a dielectric member in the specific example of a 6th reference form. It is a figure which shows the frequency characteristic of the loss amount of the high frequency circuit element made as an experiment by the specific example of the 6th reference form. It is a cross-sectional view of the high frequency circuit element which concerns on the 7th reference form of this invention. It is a cross-sectional view of the high frequency circuit element which concerns on the 8th reference form of this invention. It is a figure which shows the result of having simulated the frequency characteristic of the insertion loss in the high frequency circuit element of the specific example of an 8th reference form by electromagnetic field analysis. (A), (b), (c) are respectively a cross-sectional view of a high-frequency circuit device according to a ninth reference embodiment of the present invention, in longitudinal section perpendicular to the longitudinal sectional view and a longitudinal direction of the longitudinal is there. (A), (b) is the perspective view seen from diagonally upward and the perspective view seen diagonally from the high-frequency circuit element which concerns on the 10th reference form of this invention, respectively. (A), (b) is the longitudinal cross-sectional view and horizontal cross-sectional view of the high frequency circuit element which respectively concern on 10th reference form in order. (A), (b), (c) is a perspective view, a longitudinal sectional view, and a transverse sectional view, respectively, of the high-frequency circuit device according to the first embodiment of the present invention. (A), (b) is a top view and a back view of a dielectric substrate of the high-frequency circuit device according to the first embodiment, respectively. (A), (b) are respectively a is a cross-sectional view and a longitudinal sectional view of a high-frequency circuit element according to a first 1 of the reference embodiment of the present invention. Is a diagram showing the relationship between the amount of insertion of the resonant frequency and the frequency adjustment screws of the high-frequency circuit element of a specific example of the first 1 of the reference embodiment. Is a diagram showing the relationship between the amount of insertion of the resonant frequency and the frequency adjustment screws of the high-frequency circuit element of a specific example of the first 1 of the reference embodiment. It is a diagram showing the relationship between the amount of insertion of the resonance frequency and the inter-stage coupling degree adjusting screw of the high-frequency circuit element of a specific example of the first 1 of the reference embodiment. (A), (b) are respectively a perspective view and a cross-sectional view of a high-frequency circuit module according to the first and second reference embodiment of the present invention. (A), (b) are respectively a perspective view and a cross-sectional view of a high-frequency circuit module according to a modification of the first and second reference embodiment. (A), (b) is a figure which shows the frequency characteristic of the loss amount on the transmission side, and the frequency characteristic of the loss amount on the reception side, respectively. (A), (b) is a sectional view showing a preferred structure of the phase circuit in the first and second reference embodiment or modification, respectively. A dielectric member 1 in the first reference embodiment, formed so as to expand the cross-section from the end toward the center, is a longitudinal sectional view of a high-frequency circuit element according to a second embodiment of the present invention. It is a figure which tabulates the dimension of the dielectric member and shielding conductor in 26 GHz when using three types of ceramic materials, and the measured value of unloaded Q. (A), (b), (c) is a top view which shows the structural example in case a pair of transmission line is formed on the grounding conductor layer. (A)-(i) is sectional drawing which shows the example of the transmission line which can be used for the high frequency circuit element or high frequency circuit module of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Dielectric member 2 Shielding conductor 3 Support member 4 Transmission line 5 Strip conductor 6 Transmission line board 7 Insulator 8 Coupling probe part 9 Grounding conductor layer 10 Tip part 11 Bending part 12 Dielectric board 13 Groove 14, 15 Frequency adjustment screw 16 steps Inter-coupling adjustment screw 17 Conductor coating 18 Phase shift circuit 19 Phase shift circuit substrate 20 Dielectric substrate 21 Via hole

Claims (2)

At least one dielectric member capable of producing a resonance state of electromagnetic waves;
A support member having a dielectric constant surrounding the periphery of the dielectric member, which is smaller than the dielectric member;
A shielding conductor surrounding the support member;
At least one transmission line having a strip conductor disposed to face a part of the dielectric member, a ground conductor layer facing the strip conductor, and a dielectric layer interposed between the strip conductor and the ground conductor layer;
A coupling probe connected to the transmission line and having an electromagnetic wave input coupling function or output coupling function with the dielectric member;
The dielectric member is excited in a TM ₁₁ δ mode in a rectangular cross section or a TM ₀₁ δ mode in a circular cross section,
The coupling probe is disposed on the outer surface of the dielectric member and in the vicinity of a surface substantially parallel to the rectangular cross section or the circular cross section ;
A dielectric substrate;
A high-frequency circuit element , further comprising: a first conductor film formed on a surface of the dielectric substrate facing the dielectric member and serving as a part of the shielding conductor . At least one dielectric member capable of producing a resonance state of electromagnetic waves;
A support member having a dielectric constant surrounding the periphery of the dielectric member, which is smaller than the dielectric member;
A shielding conductor surrounding the support member;
At least one transmission line having a strip conductor disposed to face a part of the dielectric member, a ground conductor layer facing the strip conductor, and a dielectric layer interposed between the strip conductor and the ground conductor layer;
A coupling probe connected to the transmission line and having an electromagnetic wave input coupling function or an output coupling function with the dielectric member;
With
The dielectric member is excited in a TM ₁₁ δ mode in a rectangular cross section or a TM ₀₁ δ mode in a circular cross section ,
The coupling probe is disposed on the outer surface of the dielectric member and in the vicinity of a surface substantially parallel to the rectangular cross section or the circular cross section;
A high-frequency circuit element , wherein a cross-sectional shape of the dielectric member in a direction perpendicular to a longitudinal direction of the dielectric member is changed so that an area thereof is maximized at a central portion .

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