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JP3930327B2 - High frequency circuit board - Google Patents

High frequency circuit board Download PDF

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Publication number
JP3930327B2
JP3930327B2 JP2002012417A JP2002012417A JP3930327B2 JP 3930327 B2 JP3930327 B2 JP 3930327B2 JP 2002012417 A JP2002012417 A JP 2002012417A JP 2002012417 A JP2002012417 A JP 2002012417A JP 3930327 B2 JP3930327 B2 JP 3930327B2
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JP
Japan
Prior art keywords
circuit board
frequency circuit
phs structure
slit
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002012417A
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Japanese (ja)
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JP2003218270A5 (en
JP2003218270A (en
Inventor
文朗 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Priority to JP2002012417A priority Critical patent/JP3930327B2/en
Publication of JP2003218270A publication Critical patent/JP2003218270A/en
Publication of JP2003218270A5 publication Critical patent/JP2003218270A5/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

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  • Structure Of Printed Boards (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Description

【0001】
【発明の属する技術分野】
本発明はマイクロ波帯やミリ波帯などの高周波で使用される高周波回路基板に関する。
【0002】
【従来の技術】
マイクロ波帯やミリ波帯などで使用する高周波回路基板として、たとえばフェイスアップMMIC基板(以後MMIC基板という)がある。MMIC基板は、増幅素子などの回路素子を表面に配置し、その裏面がパッケージ上の所定位置にAuSn半田などで接合される。
【0003】
MMIC基板をパッケージ上に接合する場合、AuSn半田の濡れをよくするために、たとえばMMIC基板を移載コレットに取り付け、MMIC基板をX軸方向やY軸方向に僅かに移動させる方法が取られている。
【0004】
しかし、移載コレットなどを用いて、パッケージ上にMMIC基板を接合した後に、軟X線透過装置で両者の接合部を観察すると、接合部に泡が発生していることが多い。このような泡の寸法が大きくなり、またその数が多くなると、熱抵抗が増大し半導体の放熱特性が悪くなり熱的信頼性が低下する。
【0005】
ここで、従来の高周波回路基板について、MMIC基板を例にとり図3を参照して説明する。
【0006】
図3(a)は上面図で、MMIC基板31に、電界効果トランジスタなどの増幅素子32およびコンデンサ33、増幅素子32の電極やコンデンサ33を接地するVIAホール34、信号端子35、バイアス端子36などの回路素子が形成されている。
【0007】
図3(b)は下面図で、この場合、たとえばMMIC基板31の裏面全体に設けられた金属製のPHS(Plated−Heat−Sink)構造37の部分が示されている。PHS構造37は、MMIC基板31の裏面を接地し、あるいは基板の熱を放出する機能を有し、PHS構造37の部分にはVIAホール34を形成する複数の穴38が形成されている。図3(c)は図3(b)の円Bの部分を拡大した図である。
【0008】
図3(d)は、MMIC基板31をパッケージ39の所定搭載箇所に接合した状態を示す図で、MMIC基板31とパッケージ39はAuSn半田40などで接合されている。この半田付けは、通常、N2 ガスなどの雰囲気中で行われる。たとえば、移載コレット(図示せず)にMMIC基板31を取り付け、MMIC基板31に対して適正な荷重をかけながら、MMIC基板31をたとえばX軸方向やY軸方向に僅かに移動させ、スクラブしてMMIC基板31とパッケージ39を接合する。
【0009】
このとき、MMIC基板31裏面のPHS構造37の面にAuSn半田40が拡散し、MMIC基板31とパッケージ39が接合される。
【0010】
図3(e)は、MMIC基板31とパッケージ39との接合部を軟X線透過装置で透視観察した図で、符号41は接合部の内部に残った泡を示している。
【0011】
【発明が解決しようとする課題】
従来の高周波回路基板は、パッケージ上に接合する場合、たとえば高周波回路基板を移載コレットに取り付け、高周波回路基板をスクラブして接合している。しかし、高周波回路基板をX軸方向やY軸方向に移動させても、接合部分に泡が残る場合が多くなる。そのため、高周波回路基板とパッケージの接合部を軟X線透過装置などで透視観察すると、接合部の内部に多数の泡が見られる。
【0012】
この場合、AuSn半田の濡れをよくし、また泡が残らないように、移載コレットによって高周波回路基板をX軸方向およびY軸方向の双方に移動させ、スクラブして接合される。しかし、スクラブしても、接合部の内部に泡が残り、その結果、熱抵抗が増大し半導体の熱的信頼性が低下する。
【0013】
また、従来の高周波回路基板は、その裏面に金属製のPHS構造が設けられている。この場合、高周波回路基板の本体部分を構成するたとえばGaAsとPHS構造の金属との熱膨張率が相違する。そのため、温度が上昇すると、図4に示すように、バイメタル効果でMMIC基板31が反り、MMIC基板31上に形成された回路素子が損傷する場合がある。
【0014】
本発明は、上記した欠点を解決し、接合部分の熱抵抗を減少させた高周波回路基板を提供することを目的とする。
【0015】
【課題を解決するための手段】
本発明は、裏面にPHS構造が形成された高周波回路基板において、前記PHS構造の部分に交差部を有するスリットを形成し前記交差部の幅が前記交差部に隣接する部分のスリットに比べて大きくなっていることを特徴とする。
【0016】
【発明の実施の形態】
本発明の実施形態について、MMIC基板を例にとり図1を参照して説明する。
【0017】
図1(a)は上面図で、MMIC基板11に、電界効果トランジスタなどの増幅素子12およびコンデンサ13、増幅素子12の電極やコンデンサ13を接地するためのVIAホール14、信号端子15、バイアス端子16などの回路素子が形成されている。
【0018】
図1(b)は下面図で、この場合、MMIC基板11の裏面に設けられた金属製のPHS構造17の部分が示されている。PHS構造17はMMIC基板11の裏面を接地する機能や、MMIC基板11上の増幅素子12が発生する熱を放出する機能を有し、PHS構造17の部分にVIAホール14を構成する複数の穴18が形成されている。
【0019】
また、PHS構造17の部分に、たとえば縦方向および横方向に伸びる微細なスリットSが格子状に形成されている。スリットSはたとえばVIAホール14の穴18の部分を通るように設けられ、あるいは、たとえばスリットSの交差部分とVIAホール14の穴18の位置が一致するように形成されている。この場合、スリットの交差部はその隣接部分に比べて幅などの寸法が大きくなっている。なお、図1(c)は図1(b)の円Bの部分を拡大した図である。
【0020】
図1(d)は、MMIC基板11をパッケージ19の所定搭載箇所に接合した状態を示し、MMIC基板11とパッケージ19はAuSn半田20などで接合されている。この半田付けは、通常、N2 ガスなどの雰囲気中で行われる。たとえば、MMIC基板11を移載コレット(図示せず)に取り付け、MMIC基板11に対して適正な荷重をかけながら、MMIC基板11をたとえばX軸方向やY軸方向に僅かに移動させ、スクラブしてMMIC基板11をパッケージ19に接合する。
【0021】
このとき、スリット12などを通してPHS構造17全体の面にAuSn半田20が急速に拡散し、MMIC基板11とパッケージ19が接合する。
【0022】
図1(e)は、MMIC基板11とパッケージ19との接合部を軟X線透過装置などで透視観察した図で、従来技術の場合に見られた泡の形跡がほとんどなくなっている。
【0023】
上記した構成によればPHS構造17の部分に微細なスリットSが設けられている。この場合、スリットSによる毛細管現象で、溶融した状態の表面張力の大きいAuSn半田20がスリットS内を高速で流れ、PHS構造17全体の面にAuSn半田20が拡散する。また、AuSn半田20の急速な拡散でAuSn半田20の溜まり場がなくなり泡が減少する。
【0024】
また、PHS構造17の部分にスリットSが設けられている。そのため、図2に示すように、バイメタル効果によるMMIC基板11の反りが抑えられ、MMIC基板11上の回路素子に発生する損傷などが防止される。
【0025】
上記した構成では、スリットSの交差部の寸法を拡大している。この場合、交差部に集まってきたAuSn半田によって泡が追い出され、泡の発生が少なくなる。また、PHS構造の部分にVIAホールの穴が形成されているため、その穴の部分を泡の逃げ場所として利用できる。
【0026】
また、電界効果トランジスタのたとえばソース電極を接地するVIAホールなどのように、VIAホールの穴をオープンホール化たとえば裏面から表面に貫通させても支障のない箇所については、VIAホールの穴をオープンホール化すれば、泡を完全に追い出され、接合部内部の泡を少なくできる。
【0027】
上記したように、PHS構造の部分にスリットを設けた構造によれば、接合部分における泡の発生が少なくなり、MMIC基板の熱的信頼性が向上する。また、裏面のPHS構造の部分にスリットを設けた場合、MMIC基板の本体部分を構成するたとえばGaAsとPHS構造部分を構成するたとえばAu/Pa/Ti膜とのバイメタル効果が小さくなり、MMIC基板の反りが抑えられる。
【0028】
また、スリットの毛細管現象によってAuSn半田の濡れ性が向上する。そのため、高周波回路基板を移動させる高価な移載コレットなどが不要となり製造コストが軽減する。また、接合時に、加圧のみでスクラブ操作が不要となる。そのため、たとえば超音波振動を与える程度でAuSn半田を濡らすことができ自動化が容易になり、また、N2 雰囲気内でのリフロ化が容易になる。
【0029】
また、スリットどうしの交差部の寸法を大きくする場合、その寸法や形状、位置などをそれぞれ接地用VIAホールと一致させて形成してもよい。
【0030】
【発明の効果】
本発明によれば熱抵抗を減少させたMMIC基板を実現できる。
【図面の簡単な説明】
【図1】本発明の実施形態を説明するための概略の構造図である。
【図2】本発明の実施形態におけるMMIC基板の反りの状態を説明するための説明図である。
【図3】従来例を説明するための概略の構造図である。
【図4】従来例におけるMMIC基板の反りの状態を説明するための説明図である。
【符号の説明】
11…MMIC基板
12…増幅素子
13…コンデンサ
14…VIAホール
15…信号端子
16…、バイアス端子
17…PHS構造
18…VIAホールの穴
19…パッケージ
20…AuSn半田
S…スリット
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a high-frequency circuit board used at a high frequency such as a microwave band or a millimeter wave band.
[0002]
[Prior art]
As a high-frequency circuit board used in a microwave band, a millimeter wave band, or the like, for example, there is a face-up MMIC board (hereinafter referred to as an MMIC board). In the MMIC substrate, circuit elements such as amplifier elements are arranged on the front surface, and the back surface thereof is bonded to a predetermined position on the package by AuSn solder or the like.
[0003]
When joining the MMIC substrate on the package, in order to improve the wetness of the AuSn solder, for example, a method of attaching the MMIC substrate to the transfer collet and moving the MMIC substrate slightly in the X-axis direction or the Y-axis direction is taken. Yes.
[0004]
However, when the MMIC substrate is bonded onto the package using a transfer collet or the like and then the bonded portion is observed with a soft X-ray transmission device, bubbles are often generated at the bonded portion. When the size of such bubbles is increased and the number thereof is increased, the thermal resistance is increased, the heat radiation characteristics of the semiconductor are deteriorated, and the thermal reliability is lowered.
[0005]
Here, a conventional high-frequency circuit board will be described with reference to FIG. 3 taking an MMIC board as an example.
[0006]
FIG. 3A is a top view showing an MMIC substrate 31, an amplifying element 32 such as a field effect transistor and a capacitor 33, an electrode of the amplifying element 32 and a VIA hole 34 for grounding the capacitor 33, a signal terminal 35, a bias terminal 36, and the like. Circuit elements are formed.
[0007]
FIG. 3B is a bottom view. In this case, for example, a portion of a metal PHS (Plate-Heat-Sink) structure 37 provided on the entire back surface of the MMIC substrate 31 is shown. The PHS structure 37 has a function of grounding the back surface of the MMIC substrate 31 or releasing the heat of the substrate, and a plurality of holes 38 for forming VIA holes 34 are formed in the PHS structure 37. FIG. 3C is an enlarged view of a portion of a circle B in FIG.
[0008]
FIG. 3D is a diagram showing a state in which the MMIC substrate 31 is bonded to a predetermined mounting position of the package 39, and the MMIC substrate 31 and the package 39 are bonded by AuSn solder 40 or the like. This soldering is usually performed in an atmosphere of N2 gas or the like. For example, the MMIC substrate 31 is attached to a transfer collet (not shown), and the MMIC substrate 31 is slightly moved, for example, in the X-axis direction or the Y-axis direction while scrubbing while applying an appropriate load to the MMIC substrate 31. Then, the MMIC substrate 31 and the package 39 are joined.
[0009]
At this time, the AuSn solder 40 diffuses into the surface of the PHS structure 37 on the back surface of the MMIC substrate 31, and the MMIC substrate 31 and the package 39 are joined.
[0010]
FIG. 3E is a perspective view of the joint between the MMIC substrate 31 and the package 39 using a soft X-ray transmission device. Reference numeral 41 indicates bubbles remaining inside the joint.
[0011]
[Problems to be solved by the invention]
When bonding a conventional high-frequency circuit board on a package, for example, the high-frequency circuit board is attached to a transfer collet, and the high-frequency circuit board is scrubbed and bonded. However, even if the high-frequency circuit board is moved in the X-axis direction or the Y-axis direction, bubbles often remain in the joint portion. Therefore, when the joint portion between the high-frequency circuit board and the package is seen through with a soft X-ray transmission device or the like, many bubbles are seen inside the joint portion.
[0012]
In this case, the high-frequency circuit board is moved in both the X-axis direction and the Y-axis direction by the transfer collet so as to improve the wetness of the AuSn solder and no bubbles remain, and is scrubbed and joined. However, even when scrubbing, bubbles remain inside the joint, resulting in an increase in thermal resistance and a decrease in the thermal reliability of the semiconductor.
[0013]
Moreover, the conventional high frequency circuit board is provided with a metal PHS structure on the back surface thereof. In this case, for example, GaAs and PHS structure metal constituting the main body portion of the high-frequency circuit board have different thermal expansion coefficients. Therefore, when the temperature rises, as shown in FIG. 4, the MMIC substrate 31 may be warped due to the bimetal effect, and the circuit elements formed on the MMIC substrate 31 may be damaged.
[0014]
An object of the present invention is to provide a high-frequency circuit board in which the above-described drawbacks are solved and the thermal resistance of the joint portion is reduced.
[0015]
[Means for Solving the Problems]
The present invention provides a high frequency circuit board having a PHS structure formed on a back surface, wherein a slit having an intersection is formed in the PHS structure, and the width of the intersection is larger than that of a slit adjacent to the intersection. It is characterized by becoming .
[0016]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described with reference to FIG. 1 by taking an MMIC substrate as an example.
[0017]
FIG. 1A is a top view, and an MMIC substrate 11 includes an amplifying element 12 and a capacitor 13 such as a field effect transistor, a VIA hole 14 for grounding an electrode of the amplifying element 12 and the capacitor 13, a signal terminal 15, and a bias terminal. Circuit elements such as 16 are formed.
[0018]
FIG. 1B is a bottom view, and in this case, a portion of a metal PHS structure 17 provided on the back surface of the MMIC substrate 11 is shown. The PHS structure 17 has a function of grounding the back surface of the MMIC substrate 11 and a function of releasing heat generated by the amplifying element 12 on the MMIC substrate 11, and a plurality of holes constituting the VIA hole 14 in the PHS structure 17 portion. 18 is formed.
[0019]
Further, fine slits S extending in the vertical direction and the horizontal direction, for example, are formed in a lattice shape in the portion of the PHS structure 17. The slit S is provided, for example, so as to pass through the hole 18 of the VIA hole 14 or, for example, is formed so that the intersection of the slit S and the position of the hole 18 of the VIA hole 14 coincide. In this case, the crossing portion of the slit S is larger in dimensions such as the width than the adjacent portion. FIG. 1C is an enlarged view of a circle B portion in FIG.
[0020]
FIG. 1D shows a state in which the MMIC substrate 11 is bonded to a predetermined mounting position of the package 19, and the MMIC substrate 11 and the package 19 are bonded by AuSn solder 20 or the like. This soldering is usually performed in an atmosphere of N2 gas or the like. For example, the MMIC substrate 11 is attached to a transfer collet (not shown), and the MMIC substrate 11 is slightly moved, for example, in the X-axis direction or the Y-axis direction while scrubbing while applying an appropriate load to the MMIC substrate 11. Then, the MMIC substrate 11 is bonded to the package 19.
[0021]
At this time, the AuSn solder 20 is rapidly diffused to the entire surface of the PHS structure 17 through the slit 12 or the like, and the MMIC substrate 11 and the package 19 are joined.
[0022]
FIG. 1E is a perspective view of the joint between the MMIC substrate 11 and the package 19 using a soft X-ray transmission device or the like, and there is almost no trace of bubbles observed in the case of the prior art.
[0023]
According to the configuration described above, the fine slits S are provided in the PHS structure 17. In this case, due to the capillary phenomenon caused by the slit S, the AuSn solder 20 having a large surface tension in a molten state flows through the slit S at a high speed, and the AuSn solder 20 is diffused on the entire surface of the PHS structure 17. In addition, the rapid diffusion of the AuSn solder 20 eliminates the accumulation place of the AuSn solder 20 and reduces bubbles.
[0024]
A slit S is provided in the PHS structure 17. Therefore, as shown in FIG. 2, the warpage of the MMIC substrate 11 due to the bimetal effect is suppressed, and damage and the like occurring in the circuit elements on the MMIC substrate 11 are prevented.
[0025]
In the configuration described above, the dimension of the intersection of the slits S is enlarged. In this case, bubbles are driven out by the AuSn solder gathered at the intersection, and the generation of bubbles is reduced. Moreover, since the hole of the VIA hole is formed in the PHS structure portion, the hole portion can be used as a bubble escape location.
[0026]
For VIA holes such as VIA holes that ground the source electrode of a field effect transistor, for example, if there is no problem even if it penetrates from the back surface to the surface, open the VIA hole. In this case, the bubbles are completely expelled, and the bubbles inside the joint can be reduced.
[0027]
As described above, according to the structure in which the slit is provided in the portion of the PHS structure, the generation of bubbles at the joint portion is reduced, and the thermal reliability of the MMIC substrate is improved. Further, when a slit is provided in the PHS structure portion on the back surface, the bimetal effect of, for example, GaAs constituting the main body portion of the MMIC substrate and, for example, an Au / Pa / Ti film constituting the PHS structure portion is reduced, and the MMIC substrate Warpage can be suppressed.
[0028]
In addition, the wettability of the AuSn solder is improved by the capillary action of the slit. This eliminates the need for an expensive transfer collet for moving the high-frequency circuit board, thereby reducing the manufacturing cost. Further, at the time of joining, scrubbing operation becomes unnecessary only by pressurization. Therefore, for example, AuSn solder can be wetted to the extent that ultrasonic vibration is applied, and automation is facilitated, and reflow in an N2 atmosphere is facilitated.
[0029]
Further, when the dimension of the intersecting portion between the slits is increased, the dimension, shape, position, and the like may be formed so as to coincide with the grounding VIA hole.
[0030]
【The invention's effect】
According to the present invention, an MMIC substrate with reduced thermal resistance can be realized.
[Brief description of the drawings]
FIG. 1 is a schematic structural diagram for explaining an embodiment of the present invention.
FIG. 2 is an explanatory diagram for explaining a state of warping of the MMIC substrate in the embodiment of the present invention.
FIG. 3 is a schematic structural diagram for explaining a conventional example.
FIG. 4 is an explanatory diagram for explaining a state of warping of an MMIC substrate in a conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 ... MMIC board 12 ... Amplifying element 13 ... Capacitor 14 ... VIA hole 15 ... Signal terminal 16 ... Bias terminal 17 ... PHS structure 18 ... VIA hole 19 ... Package 20 ... AuSn solder S ... Slit

Claims (7)

裏面にPHS構造が形成された高周波回路基板において、前記PHS構造の部分に交差部を有するスリットを形成し前記交差部の幅が前記交差部に隣接する部分のスリットに比べて大きくなっていることを特徴とする高周波回路基板。In a high-frequency circuit board having a PHS structure formed on the back surface, a slit having an intersection is formed in the PHS structure, and the width of the intersection is larger than that of a portion adjacent to the intersection. High frequency circuit board characterized by スリットが縦方向および横方向に伸びる格子状に形成されている請求項1記載の高周波回路基板。High-frequency circuit board of Motomeko 1 wherein that are formed in a lattice shape with a slit extending in longitudinal and transverse directions. PHS構造の面をパッケージに半田付けした請求項1記載の高周波回路基板。High-frequency circuit board according to claim 1 Symbol placement soldered surface of the PHS structure to the package. 裏面にPHS構造が形成された高周波回路基板において、高周波回路基板に穴が裏面側から表面側に貫通しているVIAホールが設けられ、前記PHS構造の部分に前記VIAホールの穴の部分を通るようにスリットを設けたことを特徴とする高周波回路基板。 In a high-frequency circuit board having a PHS structure formed on the back surface, a VIA hole having a hole penetrating from the back surface side to the front surface side is provided in the high- frequency circuit board, and the PHS structure portion passes through the hole portion of the VIA hole. A high frequency circuit board having a slit as described above . 裏面にPHS構造が形成された高周波回路基板において、高周波回路基板に穴が裏面側から表面側に貫通しているVIAホールが設けられ、前記PHS構造の部分にその交差部が前記VIAホールの穴の位置と一致するようにスリットを設けたことを特徴とする高周波回路基板。 In the high frequency circuit board having the PHS structure formed on the back surface, a VIA hole having a hole penetrating from the back surface side to the front surface side is provided in the high frequency circuit board, and the intersection of the PHS structure portion is a hole of the VIA hole. A high-frequency circuit board , wherein a slit is provided so as to coincide with the position of . スリットが縦方向および横方向に伸びる格子状に形成されている請求項4または請求項5記載の高周波回路基板。 6. The high frequency circuit board according to claim 4, wherein the slits are formed in a lattice shape extending in the vertical direction and the horizontal direction . PHS構造の面をパッケージに半田付けした請求項4または請求項5記載の高周波回路基板。6. The high-frequency circuit board according to claim 4, wherein the surface of the PHS structure is soldered to the package.
JP2002012417A 2002-01-22 2002-01-22 High frequency circuit board Expired - Lifetime JP3930327B2 (en)

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