JP4193261B2

JP4193261B2 - Semiconductor deburring method and deburring wide gun

Info

Publication number: JP4193261B2
Application number: JP00714799A
Authority: JP
Inventors: 修山形
Original assignee: Sony Corp
Current assignee: Sony Corp
Priority date: 1999-01-14
Filing date: 1999-01-14
Publication date: 2008-12-10
Anticipated expiration: 2019-01-14
Also published as: JP2000202775A

Description

【０００１】
【発明の属する技術分野】
本発明は半導体のバリを除去する半導体バリ取り方法およびバリ除去幅広ガンに関し、特に研磨剤を噴射しバリを除去する半導体バリ取り方法およびバリ除去幅広ガンに関する。
【０００２】
【従来の技術】
半導体パッケージのバリを除去する代表的な方法として、乾式、水圧方式および液体ホーキング方式等が挙げられる。中でも液体ホーキング方式は、バリの除去効率が高く、またバリ除去後の洗浄等の後処理が容易であり、さらにランニングコストも安いため、最も多用されているバリ除去法である。
【０００３】
液体ホーニング方式とは、粉末状の研磨剤を液体と混合し、その混合された研磨剤を対象物に噴射し、それによりバリ取り等を行なうバリ取り方法である。この液体ホーニング方式は、その噴射形態により、全面打ち方式と狙い打ち方式とに大別することができる。
【０００４】
全面打ち方式は、バリ取り対象物全体に対し前記の研磨剤を噴射してバリ取りを行なうことを特徴としており、噴射口と対象物間において複雑な位置制御を必要としないため、装置の簡略化、低コスト化が可能となる。また、バリ取り時に噴射口と対象物間の複雑な位置制御を必要としないため、バリ取り作業時間が短縮でき、これにより高い作業効率を得ることができる。
【０００５】
一方、狙い打ち方式は、バリ取り対象物のバリ位置に対し局部的に前記の研磨剤を噴射してバリ取りを行なうことを特徴としており、バリ取りが不要な部分に研磨剤を当てることなく、必要な部分のバリ取りを行なうことが可能である。これにより、表面の傷が致命傷となる光ピックアップ等の受光素子の受光部に研磨剤を当てることなく、バリ取りを行なうことが可能である。
【０００６】
【発明が解決しようとする課題】
しかし、全面打ち方式は、バリ取り対象物全体に対し前記の研磨剤を噴射するため、バリ取り対象物が光ピックアップ等の受光素子であった場合、その研磨剤の噴射は受光素子の受光部を傷つける結果となる。受光素子において、その受光部の傷は致命的な欠陥となるため、このような方法は受光素子には適用できない。
【０００７】
一方、狙い打ち方式を用いれば、受光素子の受光部に研磨剤を当てることなくバリ取りができるため、このような受光素子のバリ取りを行なうことが可能となる。しかし、狙い打ち方式は、細く絞った噴射口の位置を複雑に制御し、バリ取り対象物のバリ部分に研磨剤を噴射することとなるため、装置が複雑化し、装置の低コスト化が図れない。また、噴射口とバリ取り対象物の位置関係を複雑に制御しながらバリ取り作業を行なうため作業効率も悪い。さらに、複数のバリ取り対象物を同時に処理する場合、更なる装置の複雑化、ハイコスト化、作業効率の悪化が進むという問題点がある。
【０００８】
本発明はこのような点に鑑みてなされたものであり、単純で低コストな構造の装置を用い、作業効率が良く、受光素子の受光部に研磨剤を当てることなくバリ取り作業を行なうことが可能な半導体バリ取り方法およびバリ除去幅広ガンを提供することを目的とする。
【０００９】
【課題を解決するための手段】
本発明では上記課題を解決するために、半導体のバリを除去する半導体バリ取り方法において、半導体の表面のみに、前記半導体を保護するマスクを設置し、リードフレームにおける表面の各リード部に対応した複数の噴射口を有し、かつ複数の噴射口の幅が、その噴射口に対応する表面の各リード部の幅以上に設定された表面用バリ除去幅広ガンから、半導体の表面のバリ部分に局所的に、液体と混合された研磨剤を噴射する。また、リードフレームにおける裏面の各リード部に対応した複数の噴射口を有し、かつ複数の噴射口の幅が、その噴射口に対応する裏面の各リード部の幅以上に設定された裏面用バリ除去幅広ガンから、半導体の裏面のバリ部分に局所的に、液体と混合された研磨剤を噴射する。そして、表面用バリ除去幅広ガン及び裏面用バリ除去幅広ガンを移動させながら半導体のバリを除去し、半導体をシャワーによって洗浄し、半導体を洗浄幅広ガンによって洗浄することを特徴とする半導体バリ取り方法が提供される。また、半導体のバリを除去するバリ除去幅広ガンにおいて、リードフレーム上における表面の各リード部に対応した複数の噴射口を有し、かつ複数の噴射口の幅が、対応する表面の各リード部の幅以上に設定された表面用バリ除去幅広ガンと、リードフレーム上における裏面の各リード部に対応した複数の噴射口を有し、かつ複数の噴射口の幅が、対応する裏面の各リード部の幅以上に設定された裏面用バリ除去幅広ガンと、を備えている。表面用バリ除去幅広ガンは、噴射口から、液体と混合された研磨剤を前記半導体の表面のバリ部分に局所的に噴射し、裏面用バリ除去幅広ガンは、噴射口から、液体と混合された研磨剤を半導体の裏面のバリ部分に局所的に噴射し、表面用バリ除去幅広ガン及び裏面用バリ除去幅広ガンが、表面のリード部及び裏面のリード部と平行に移動することを特徴とするバリ除去幅広ガンが提供される。
【００１０】
ここで、複数の噴射口を有するバリ除去幅広ガンは、同時に複数の半導体のバリ部分に研磨剤を噴射し、半導体上を移動しながらバリを除去する。シャワーは、バリ除去後の半導体を１次洗浄し、洗浄幅広ガンは、１次洗浄後の半導体を２次洗浄する。
【００１１】
【発明の実施の形態】
以下、本発明の実施の形態を図面を参照して説明する。
まず、本形態における半導体の表面バリ取り処理の構成について説明する。
【００１２】
図１、図２および図３は、本発明の実施の形態における半導体の表面バリ取り処理を示す平面図、正面図および左側面図である。
本形態では、図１の示すように複数個の半導体１１〜１４、２１〜２４が一列の帯状に接続され半導体バンド１０、２０を形成している。これらの半導体バンド１０、２０は互いに平行に配置され、帯状のリード部３ｂを介し接続されている。また、リード部３ｂが接続されていない半導体バンド１０のもう一方側の側面にはリード部３ａが接続されている。そして、このように半導体およびリード部が交互に接続されることによりリードフレーム４を形成している。
【００１３】
半導体１１〜１４、２１〜２４の表面には受光部１１ａ〜１４ａ、２１ａ〜２４ａが設置されており、半導体１１〜１４、２１〜２４の上部には、この受光部１１ａ〜１４ａ、２１ａ〜２４ａを保護するために、図２および図３に示すマスク１０ｂ、２０ｂが設置されている。
【００１４】
また、リード部３ａ、３ｂの下部には、一つのリード部３ａ、３ｂに対し一つの裏面サポート４０ａ、４０ｂが配置されており、これによりリード部３ａ、３ｂを保持している。図２の場合、リード部３ａの下部には裏面サポート４０ａが、リード部３ｂの下部には裏面サポート４０ｂが配置され、リード部３ａ、３ｂを保持している。
【００１５】
リードフレーム４の上部には、半導体１１〜１４、２１〜２４のバリ取りを行なう表面用バリ除去幅広ガン１が配置される。表面用バリ除去幅広ガン１は、複数個の噴射口１ａ、１ｂを有しており、この噴射口１ａ、１ｂからリードフレーム４上に研磨剤を噴射して半導体１１〜１４、２１〜２４のバリ取りを行なう。表面用バリ除去幅広ガン１に設置されている複数の噴射口１ａ、１ｂは、それぞれリードフレーム４のいずれか一つのリード部３ａ、３ｂと一対一で対応しており、各噴射口１ａ、１ｂは、それぞれが対応しているリード部３ａ、３ｂの真上に一つずつ配置される。図１、図２の場合、リード部３ａの真上に噴射口１ａが、リード部３ｂの真上に噴射口１ｂが配置される。
【００１６】
各噴射口１ａ、１ｂの噴射口幅は、その噴射口１ａ、１ｂに対応するリード部３ａ、３ｂのリード部幅以上となるように設定されている。例えば、噴射口１ｂの場合、噴射口１ｂの噴射口幅Ｗ１は、その噴射口１ｂに対応するリード部３ｂのリード部幅Ｗ２以上となるように設定されている。また同時に噴射口１ａ、１ｂは、その噴射口１ａ、１ｂから噴射される研磨剤が半導体１１〜１４、２１〜２４の受光部１１ａ〜１４ａ、２１ａ〜２４ａの上部に当たらないよう、その噴射口幅の上限が設定される。
【００１７】
次に、図１、図２および図３を用いて、半導体１１〜１４、２１〜２４表面のバリ取り処理動作について説明する。
表面のバリ取り処理が始まると、まず表面用バリ除去幅広ガン１に備え付けられている複数の噴射口１ａ、１ｂから研磨剤が噴射される。この研磨剤としては、粉末状の研磨剤と液体を混合させた混合剤、例えばガラスビーズと樹脂ビーズと水を混合させたものを用いる。
【００１８】
各噴射口１ａ、１ｂから噴射された研磨剤は、それぞれの噴射口１ａ、１ｂの直下に位置するリード部３ａ、３ｂとその両端に位置する半導体１１〜１４、２１〜２４のエッジ部分に達し、それにより、その半導体１１〜１４、２１〜２４のエッジ部分に位置するバリを除去する。この研磨剤の噴射は、表面用バリ除去幅広ガン１に備え付けられている複数の噴射口１ａ、１ｂから同時に行なわれるため、それぞれの噴射口１ａ、１ｂに対応するリード部３ａ、３ｂの両端に位置する半導体１１〜１４、２１〜２４のバリを同時に除去することができる。
【００１９】
このとき、噴射された研磨剤の一部は噴射口１ａ、１ｂから直接に半導体１１〜１４、２１〜２４の受光部１１ａ〜１４ａ、２１ａ〜２４ａの上部に達し、また一部は半導体１１〜１４、２１〜２４のエッジ部分に到達後噴射の圧力等により受光部１１ａ〜１４ａ、２１ａ〜２４ａに上部へ間接的に到達する。しかし、半導体１１〜１４、２１〜２４の上部にはマスク１０ａ、１０ｂが配置されており、これにより研磨剤が受光部１１ａ〜１４ａ、２１ａ〜２４ａに直接に接することを防いでいる。
【００２０】
表面用バリ除去幅広ガン１は、以上のように研磨剤を噴射した状態でリード部３ａ、３ｂおよび半導体バンド１０、２０と平行にリードフレーム４上を移動し、その直下にある半導体１１〜１４、２１〜２４のバリを除去していく。ここで表面用バリ除去幅広ガン１を平行移動させる動力は、後述する裏面用バリ除去幅広ガン５０を平行移動させる動力と共通であり、その共通動力である一つのモータを駆動させることにより、表面用バリ除去幅広ガン１ならびに裏面用バリ除去幅広ガン５０の移動を行なう。
【００２１】
このようにして半導体１１〜１４、２１〜２４の表面のバリ取りが終了すると、次は半導体１１〜１４、２１〜２４の裏面のバリ取り処理へ移る。
次に、本形態における半導体の裏面バリ取り処理の構成について説明する。
【００２２】
図４、図５および図６は、本発明の実施の形態における半導体の裏面バリ取り処理を示す下面図、正面図および左側面図である。
リードフレーム４の裏面も表面と同様に、リード部３ａ、３ｂと半導体１１〜１４、２１〜２４の帯が交互に配列されている。しかし、半導体１１〜１４、２１〜２４の裏面には受光部が無いため、裏面には受光部を守るためのマスクは配置されない。また、リード部３ａ、３ｂの上部には図５に示す表面サポート６０ａ、６０ｂが配置され、リード部３ａ、３ｂを保持する。
【００２３】
リードフレーム４の下部には、裏面用バリ除去幅広ガン５０が配置されており、裏面用バリ除去幅広ガン５０には複数の噴射口５０ａ、５０ｂを有している。そして、表面用バリ除去幅広ガン１の場合と同様に、裏面用バリ除去幅広ガン５０の噴射口５０ａ、５０ｂは、それぞれリードフレーム４のいずれか一つのリード部３ａ、３ｂと一対一で対応しており、各噴射口５０ａ、５０ｂは、それぞれが対応しているリード部３ａ、３ｂの真下に一つずつ配置される。各噴射口５０ａ、５０ｂの噴射口幅は、その噴射口５０ａ、５０ｂに対応するリード部３ａ，３ｂのリード部幅以上となるように設定されている。噴射口５０ｂの場合、噴射口５０ｂの噴射口幅Ｗ３は、その噴射口５０ｂに対応するリード部３ｂのリード部幅Ｗ４以上となるように設定されている。
【００２４】
次に、図４、図５および図６を用いて、半導体１１〜１４、２１〜２４裏面のバリ取り処理動作について説明する。
裏面のバリ取り処理が始まると、まず裏面用バリ除去幅広ガン５０に備え付けられている複数の噴射口５０ａ、５０ｂから研磨剤が噴射される。
【００２５】
各噴射口５０ａ、５０ｂから噴射された研磨剤は、それぞれの噴射口５０ａ、５０ｂの直上に位置するリード部３ａ、３ｂとその両端に位置する半導体１１〜１４、２１〜２４のエッジ部分に達し、それにより、その半導体１１〜１４、２１〜２４のエッジ部分に位置するバリを除去する。この研磨剤の噴射は、裏面用バリ除去幅広ガン５０に備え付けられている複数の噴射口５０ａ、５０ｂから同時に行なわれるため、それぞれの噴射口５０ａ、５０ｂに対応するリード部３ａ、３ｂの両端に位置する半導体１１〜１４、２１〜２４のバリを同時に除去することができる。
【００２６】
そして、裏面用バリ除去幅広ガン５０は、以上のように研磨剤を噴射した状態でリード部３ａ、３ｂおよび半導体バンド１０、２０に平行にリードフレーム４下部を移動し、その真上にある半導体１１〜１４、２１〜２４のバリを除去していく。このようにして半導体１１〜１４、２１〜２４の裏面のバリ取りが終了すると、次は洗浄処理へ移る。
【００２７】
図７は、本形態の処理工程を示した概念図である。
本形態の処理工程は、半導体１１〜１４、２１〜２４の表面ならびに裏面のバリ取り処理を行なう処理室６０、バリ取り処理が終了した半導体１１〜１４、２１〜２４の１次洗浄を行なう両面シャワー６１、両面シャワー６１に用いる洗浄水を貯水する１次洗浄タンク６３、１次洗浄後の半導体１１〜１４、２１〜２４の２次洗浄を行なう洗浄幅広ガン６２、および洗浄幅広ガン６２に用いる洗浄水を貯水する２次洗浄タンク６４により構成されている。
【００２８】
処理室６０でバリ取り処理を行なった半導体１１〜１４、２１〜２４を有するリードフレーム４は、両面シャワー６１により、その両面を洗浄される。処理室６０でバリ取り処理を行なった半導体１１〜１４、２１〜２４の表面および裏面には、研磨剤およびにバリ取り処理によって研磨されたバリの削りくず等が付着しており、両面シャワー６１は、これらの付着物の１次洗浄を行なう。この１次洗浄を高い水圧で行なうと、付着物により半導体１１〜１４、２１〜２４の表面が傷つけられてしまう危険性があるため、１次洗浄の両面シャワー６１の水圧は極力弱くする。
【００２９】
両面シャワー６１により１次洗浄を終えた半導体１１〜１４、２１〜２４を有するリードフレーム４は、洗浄幅広ガン６２によって２次洗浄される。洗浄幅広ガンは、図示していない複数の噴射口を有しており、その噴射口から洗浄水を噴射し、半導体１１〜１４、２１〜２４の表面およびに裏面の付着物を除去する。２次洗浄時点では、１次洗浄により大まかな付着物は除去されており、２次洗浄時に付着物が半導体１１〜１４、２１〜２４の表面を傷つけることはない。そのため２次洗浄の洗浄幅広ガン６２の水圧は高めに設定してあり、半導体１１〜１４、２１〜２４の付着物を十分に取り除くことができる。
【００３０】
以上のように、本形態では、半導体１１〜１４、２１〜２４の表面にマスク１０ｂ、２０ｂを配し、各リード部３ａ、３ｂと一対一で対応した複数の噴射口１ａ、１ｂを有する表面用バリ除去幅広ガン１の複数の噴射口１ａ、１ｂから研磨剤を噴射し、複数の半導体１１〜１４、２１〜２４のバリ部分に局所的に、かつ同時に研磨剤を当てながら、表面用バリ除去幅広ガン１をリード部３ａ、３ｂと平行に移動させて半導体１１〜１４、２１〜２４表面のバリ取りを行ない、同様に各リード部３ａ、３ｂに一対一で対応した複数の噴射口５０ａ、５０ｂを有する裏面用バリ除去幅広ガン５０によって半導体裏面のバリ取り処理を行なうこととしたため、半導体１１〜１４、２１〜２４の受光部１１ａ〜１４ａ、２１ａ〜２４ａを傷つけることなくバリ取り処理を行なうことができる。
【００３１】
また、複数の噴射口を一体化した幅広ガンを平行移動することでバリ取りが行なえるため、装置構成が単純になり設備コストの低減がはかれるとともに、バリ取り作業中の位置制御が容易になり作業時間の短縮がはかれる。さらに、バリ取り処理を行なう半導体１１〜１４、２１〜２４の数を増やしたとしても、幅広ガンのサイズを大きくし噴射口の数を増やすか、もしくは平行移動する距離を延ばすだけで対応できるため、半導体の処理個数に応じて装置の構造および処理工程自体を複雑にする必要はない。
【００３２】
また、本形態では、半導体１１〜１４、２１〜２４の表面のバリ取り処理を表面用バリ除去幅広ガン１で行ない、裏面のバリ取り処理を裏面用バリ除去幅広ガン５０で行なうこととしたため、表面および裏面に噴射する研磨剤の出力をそれぞれ独立に設定することができる。これによりより詳細な条件設定が可能となる。なおかつ、表面用バリ除去幅広ガン１および裏面用バリ除去幅広ガン５０の平行移動時の動力は共通のモータで行なうこととしたため、設備の簡略化がはかれる。
【００３３】
さらに、本形態では、バリ取り処理後に両面シャワーにより半導体１１〜１４、２１〜２４を１次洗浄し、その後洗浄幅広ガン６２により２次洗浄を行なうこととしたため、洗浄によって受光部１１ａ〜１４ａ、２１ａ〜２４ａが傷つくこと防ぎ、なおかつ十分な洗浄を行なうことができる。
【００３４】
なお、本形態では、受光部１１ａ〜１４ａ、２１ａ〜２４ａを有する半導体１１〜１４、２１〜２４の表面部のみにマスク１０ｂ、２０ｂを配置しバリ取り処理を行なったが、表面および裏面の両面にマスクを配置することとしてもよい。
【００３５】
また、本形態では、半導体１１〜１４、２１〜２４裏面のバリ取りを表面と同様にバリ除去幅広ガンを用いて行なったが、受光部１１ａ〜１４ａ、２１ａ〜２４ａを有する半導体１１〜１４、２１〜２４表面のバリ取りをバリ除去幅広ガンで行ない、受光部１１ａ〜１４ａ、２１ａ〜２４ａを有しない半導体１１〜１４、２１〜２４裏面のバリ取りを全面打ちの液体ホーキング方式としてもよい。
【００３６】
さらに、本形態では幅広ガンに設置されている複数噴射口は、いずれかのリード部３ａ、３ｂと一対一で対応することとしたが、いずれかの半導体１１〜１４、２１〜２４のエッジ部と一対一で対応するようにしてもよい。またさらに、いずれか一つの半導体１１〜１４、２１〜２４のエッジ部に複数の噴射口が対応するようにしてもよい。
【００３７】
また、本形態ではリードフレーム４の表面に半導体１１〜１４、２１〜２４の受光部１１ａ〜１４ａ、２１ａ〜２４ａが位置するように配置されていたが、リードフレーム４の裏面に半導体１１〜１４、２１〜２４の受光部１１ａ〜１４ａ、２１ａ〜２４ａが位置するように配置してもよい。その場合マスク１０ｂ、２０ｂは、リードフレーム４の裏面側に設置される。
【００３８】
【発明の効果】
以上説明したように本発明では、半導体の表面にマスクを配し、各リード部と一対一で対応した複数の噴射口を有する表面用バリ除去幅広ガンの複数の噴射口から研磨剤を噴射し、複数の半導体のバリ部分に局所的に、かつ同時に研磨剤を当てながら、表面用バリ除去ガンをリード部と平行に移動させて半導体表面のバリ取りを行ない、同様に各リード部に一対一で対応した複数の噴射口を有する裏面用バリ除去幅広ガンによって半導体裏面のバリ取り処理を行なうこととしたため、単純な構成で安価な装置を用い、高い作業効率を保ちつつ、半導体の受光部を傷つけることなくバリ取り処理を行なうことができ、また、半導体の処理個数に応じて設備の複雑化、処理工程の複雑化を招くこともない。
【００３９】
また、半導体の表面のバリ取り処理を表面用バリ除去幅広ガンで行ない、裏面のバリ取り処理を裏面用バリ除去幅広ガンで行なうこととしたため、表面および裏面に噴射する研磨剤の出力をそれぞれ独立に設定することができ、より詳細な条件設定が可能となる。なおかつ、表面用バリ除去幅広ガンおよび裏面用バリ除去幅広ガンの平行移動時の動力は共通のモータで行なうこととしたため、設備の簡略化をはかれる。
【００４０】
さらに、バリ取り処理後に両面シャワーにより半導体を１次洗浄し、その後洗浄幅広ガンにより２次洗浄を行なうこととしたため、洗浄によって受光部が傷つくこと防ぎ、なおかつ十分な洗浄を行なうことができる。
【図面の簡単な説明】
【図１】本発明の実施の形態における半導体の表面バリ取り処理を示す平面図である。
【図２】本発明の実施の形態における半導体の表面バリ取り処理を示す正面図である。
【図３】本発明の実施の形態における半導体の表面バリ取り処理を示す左側面図である。
【図４】本発明の実施の形態における半導体の裏面バリ取り処理を示す下面図である。
【図５】本発明の実施の形態における半導体の裏面バリ取り処理を示す正面図である。
【図６】本発明の実施の形態における半導体の裏面バリ取り処理を示す左側面図である。
【図７】本形態の処理工程を示した概念図である。
【符号の説明】
１…表面用バリ除去幅広ガン、１ａ…噴射口、１ｂ…噴射口、１１〜１４…半導体、２１〜２４…半導体、１１ａ〜１４ａ…受光部、２１ａ〜２４ａ…受光部、３ａ…リード部、３ｂ…リード部、４…リードフレーム、５０…裏面用バリ除去幅広ガン、６１…両面シャワー、６２…洗浄幅広ガン[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor deburring method and a deburring wide gun for removing burrs from a semiconductor, and more particularly to a semiconductor deburring method and a deburring wide gun for spraying an abrasive to remove burrs.
[0002]
[Prior art]
Typical methods for removing burrs from the semiconductor package include a dry method, a hydraulic method, a liquid hawking method, and the like. Among them, the liquid hawking method is the most frequently used deburring method because it has high burr removal efficiency, is easy to perform post-treatment such as cleaning after deburring, and has a low running cost.
[0003]
The liquid honing method is a deburring method in which a powdery abrasive is mixed with a liquid, the mixed abrasive is sprayed onto an object, and deburring is thereby performed. This liquid honing method can be broadly classified into a full hitting method and a target hitting method depending on the jet form.
[0004]
The full-face punching method is characterized by deburring by spraying the above-mentioned abrasive on the entire object to be deburred, and does not require complicated position control between the injection port and the object, thus simplifying the apparatus. And cost reduction. In addition, since complicated position control between the injection port and the object is not required at the time of deburring, the deburring operation time can be shortened, and thereby high working efficiency can be obtained.
[0005]
On the other hand, the aiming method is characterized by performing the deburring by locally injecting the abrasive to the deburring position of the deburring object, without applying the abrasive to the part where deburring is unnecessary, It is possible to deburr necessary parts. As a result, it is possible to perform deburring without applying an abrasive to the light receiving portion of a light receiving element such as an optical pickup whose surface is fatal.
[0006]
[Problems to be solved by the invention]
However, since the entire surface deburring method injects the abrasive to the entire object to be deburred, when the object to be deburred is a light receiving element such as an optical pickup, the injection of the abrasive is performed on the light receiving portion of the light receiving element. Result in hurting. In the light receiving element, since the scratch on the light receiving part becomes a fatal defect, such a method cannot be applied to the light receiving element.
[0007]
On the other hand, if the aiming method is used, deburring can be performed without applying an abrasive to the light receiving portion of the light receiving element, and thus it is possible to perform such deburring of the light receiving element. However, the aiming method complicates the position of the finely squeezed injection port and injects the abrasive onto the deburring part of the deburring target, so that the apparatus becomes complicated and the cost of the apparatus cannot be reduced. . In addition, since the deburring operation is performed while the positional relationship between the ejection port and the deburring target is controlled in a complicated manner, the work efficiency is poor. Further, when a plurality of deburring objects are processed at the same time, there are problems that the device becomes more complicated, the cost is increased, and the working efficiency is further deteriorated.
[0008]
The present invention has been made in view of these points, and uses a simple and low-cost apparatus, has a high work efficiency, and performs a deburring operation without applying an abrasive to the light receiving portion of the light receiving element. An object of the present invention is to provide a semiconductor deburring method and a wide deburring gun.
[0009]
[Means for Solving the Problems]
In the present invention, in order to solve the above-described problem, in a semiconductor deburring method for removing burrs from a semiconductor, a mask for protecting the semiconductor is provided only on the surface of the semiconductor to correspond to each lead portion on the surface of the lead frame. have a plurality of injection ports, and the width of the plurality of injection ports, the surface for deburring wide gun set equal to or larger than the width of each lead portion of the surface corresponding to the injection port, the burr portion of the semiconductor surface The abrasive mixed with the liquid is locally sprayed . In addition, for the back surface having a plurality of injection ports corresponding to each lead portion on the back surface of the lead frame, and the width of the plurality of injection ports set to be equal to or larger than the width of each lead portion on the back surface corresponding to the injection port The abrasive mixed with the liquid is sprayed locally from the wide deburring gun to the burr portion on the back surface of the semiconductor. A semiconductor deburring method comprising: removing a semiconductor burr while moving the front- side deburring wide gun and the back-side deburring wide gun , cleaning the semiconductor by a shower, and cleaning the semiconductor by the wide cleaning gun. Is provided. Further, the deburring wide cancer for removing semiconductor burrs, has a plurality of injection ports corresponding to each lead portion of the surface on the lead frame, and the width of the plurality of injection ports, each lead portion of the corresponding surface The front deburring wide gun set to a width greater than or equal to the width of the lead frame, and a plurality of injection ports corresponding to the respective lead portions on the back surface of the lead frame. And a deburring wide gun for back surface set to be equal to or larger than the width of the part. The front- side deburring wide gun locally sprays the abrasive mixed with the liquid from the injection port onto the burr portion of the semiconductor surface, and the back-side deburring wide gun is mixed with the liquid from the injection port. The abrasive is locally sprayed onto the burrs on the back surface of the semiconductor, and the front burr removal wide gun and the back burr removal wide gun move in parallel with the front lead portion and the back lead portion. A wide deburring gun is provided.
[0010]
Here, the wide burr removal gun having a plurality of injection ports simultaneously injects an abrasive onto a burr portion of a plurality of semiconductors, and removes burrs while moving on the semiconductor. The shower primarily cleans the semiconductor after removal of burrs, and the wide cleaning gun secondary cleans the semiconductor after primary cleaning.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, the structure of the semiconductor surface deburring process in this embodiment will be described.
[0012]
1, FIG. 2, and FIG. 3 are a plan view, a front view, and a left side view showing a semiconductor surface deburring process in the embodiment of the present invention.
In this embodiment, as shown in FIG. 1, a plurality of semiconductors 11 to 14 and 21 to 24 are connected in a single band to form semiconductor bands 10 and 20. These semiconductor bands 10 and 20 are arranged in parallel to each other and are connected via a strip-shaped lead portion 3b. Further, the lead portion 3a is connected to the other side surface of the semiconductor band 10 to which the lead portion 3b is not connected. In this way, the lead frame 4 is formed by alternately connecting the semiconductor and the lead portion.
[0013]
Light receiving portions 11a to 14a and 21a to 24a are installed on the surfaces of the semiconductors 11 to 14, 21 to 24, and the light receiving portions 11a to 14a and 21a to 24a are provided on the semiconductors 11 to 14, 21 to 24, respectively. 2 and FIG. 3 are provided with masks 10b and 20b.
[0014]
Further, under the lead portions 3a and 3b, one back surface support 40a and 40b are arranged for one lead portion 3a and 3b, thereby holding the lead portions 3a and 3b. In the case of FIG. 2, the back surface support 40a is disposed below the lead portion 3a, and the back surface support 40b is disposed below the lead portion 3b to hold the lead portions 3a and 3b.
[0015]
On the top of the lead frame 4, a wide deburring surface gun 1 for deburring the semiconductors 11-14 and 21-24 is disposed. The surface deburring wide gun 1 has a plurality of injection ports 1a and 1b, and an abrasive is sprayed onto the lead frame 4 from the injection ports 1a and 1b to form the semiconductors 11 to 14 and 21 to 24. Deburring is performed. The plurality of injection ports 1a and 1b installed in the surface deburring wide gun 1 correspond to any one of the lead portions 3a and 3b of the lead frame 4, respectively, and each of the injection ports 1a and 1b. Are arranged one above the corresponding lead portions 3a, 3b. In the case of FIGS. 1 and 2, the injection port 1a is disposed right above the lead portion 3a, and the injection port 1b is disposed right above the lead portion 3b.
[0016]
The ejection port width of each ejection port 1a, 1b is set to be equal to or larger than the lead portion width of the lead portions 3a, 3b corresponding to the ejection ports 1a, 1b. For example, in the case of the injection port 1b, the injection port width W1 of the injection port 1b is set to be equal to or larger than the lead portion width W2 of the lead portion 3b corresponding to the injection port 1b. At the same time, the injection ports 1a and 1b are arranged so that the abrasive sprayed from the injection ports 1a and 1b does not hit the upper portions of the light receiving portions 11a to 14a and 21a to 24a of the semiconductors 11 to 14, 21 to 24. The upper limit of the width is set.
[0017]
Next, the deburring process operation on the surfaces of the semiconductors 11 to 14 and 21 to 24 will be described with reference to FIGS.
When the surface deburring process is started, the abrasive is first sprayed from the plurality of spray ports 1a and 1b provided in the surface deburring wide gun 1. As this abrasive | polishing agent, the mixed agent which mixed the powdery abrasive | polishing agent and the liquid, for example, what mixed glass beads, resin beads, and water is used.
[0018]
The abrasive sprayed from each of the spray ports 1a, 1b reaches the edge portions of the lead portions 3a, 3b located immediately below the respective spray ports 1a, 1b and the semiconductors 11-14, 21-24 positioned at both ends thereof. Thereby, burrs located at the edge portions of the semiconductors 11 to 14 and 21 to 24 are removed. Since the abrasive is sprayed simultaneously from the plurality of spray ports 1a and 1b provided in the surface deburring wide gun 1, it is applied to both ends of the lead portions 3a and 3b corresponding to the spray ports 1a and 1b. The burrs of the located semiconductors 11 to 14 and 21 to 24 can be removed at the same time.
[0019]
At this time, a part of the sprayed abrasive directly reaches the upper part of the light receiving parts 11a to 14a and 21a to 24a of the semiconductors 11 to 14, 21 to 24 from the spray ports 1a and 1b, and a part of the semiconductors 11 to 14a. 14 and 21 to 24, the light receiving portions 11a to 14a and 21a to 24a are indirectly reached to the upper part by the pressure of the jet after reaching the edge portion. However, masks 10a and 10b are arranged on the semiconductors 11 to 14 and 21 to 24, thereby preventing the abrasive from coming into direct contact with the light receiving portions 11a to 14a and 21a to 24a.
[0020]
The surface deburring wide gun 1 moves on the lead frame 4 in parallel with the lead portions 3a and 3b and the semiconductor bands 10 and 20 in a state where the abrasive is sprayed as described above, and the semiconductors 11 to 14 located immediately below the lead frame 4. 21 to 24 burrs are removed. Here, the power for moving the front-side deburring wide gun 1 in parallel is the same as the power for moving the rear-side deburring wide gun 50, which will be described later, and by driving one motor that is the common power, The deburring wide gun 1 and the backside deburring wide gun 50 are moved.
[0021]
When the deburring of the front surfaces of the semiconductors 11 to 14 and 21 to 24 is completed in this way, the process proceeds to the deburring processing of the back surfaces of the semiconductors 11 to 14 and 21 to 24.
Next, the configuration of the semiconductor backside deburring process in this embodiment will be described.
[0022]
4, FIG. 5, and FIG. 6 are a bottom view, a front view, and a left side view showing the back surface deburring process of the semiconductor according to the embodiment of the present invention.
Similarly to the front surface of the lead frame 4, the lead portions 3 a and 3 b and the bands of the semiconductors 11 to 14 and 21 to 24 are alternately arranged. However, since there are no light receiving portions on the back surfaces of the semiconductors 11 to 14 and 21 to 24, a mask for protecting the light receiving portions is not disposed on the back surfaces. Further, surface supports 60a and 60b shown in FIG. 5 are arranged on the upper portions of the lead portions 3a and 3b, and hold the lead portions 3a and 3b.
[0023]
A wide backside deburring gun 50 is disposed below the lead frame 4, and the wide backside deburring gun 50 has a plurality of injection ports 50a and 50b. As in the case of the front deburring wide gun 1, the injection ports 50 a and 50 b of the rear deburring wide gun 50 correspond one-to-one with any one of the lead portions 3 a and 3 b of the lead frame 4. Each of the injection ports 50a and 50b is arranged one below the corresponding lead portion 3a and 3b. The ejection port width of each ejection port 50a, 50b is set to be equal to or larger than the lead portion width of the lead portions 3a, 3b corresponding to the ejection ports 50a, 50b. In the case of the injection port 50b, the injection port width W3 of the injection port 50b is set to be equal to or larger than the lead portion width W4 of the lead portion 3b corresponding to the injection port 50b.
[0024]
Next, the deburring process operation on the back surfaces of the semiconductors 11 to 14 and 21 to 24 will be described with reference to FIGS. 4, 5, and 6.
When the back surface deburring process starts, first, the abrasive is sprayed from the plurality of spray ports 50a, 50b provided in the back surface deburring wide gun 50.
[0025]
The abrasive sprayed from each of the spray ports 50a, 50b reaches the edge portions of the lead portions 3a, 3b located immediately above the respective spray ports 50a, 50b and the semiconductors 11-14, 21-24 positioned at both ends thereof. Thereby, burrs located at the edge portions of the semiconductors 11 to 14 and 21 to 24 are removed. Since the abrasive is sprayed simultaneously from a plurality of spray ports 50a and 50b provided in the backside deburring wide gun 50, the both ends of the lead portions 3a and 3b corresponding to the respective spray ports 50a and 50b. The burrs of the located semiconductors 11 to 14 and 21 to 24 can be removed at the same time.
[0026]
Then, the backside deburring wide gun 50 moves under the lead frame 4 in parallel with the lead portions 3a and 3b and the semiconductor bands 10 and 20 in a state where the abrasive is sprayed as described above, and the semiconductor just above it. The burrs of 11-14 and 21-24 are removed. When the deburring of the back surfaces of the semiconductors 11 to 14 and 21 to 24 is completed in this way, the process proceeds to a cleaning process.
[0027]
FIG. 7 is a conceptual diagram showing the processing steps of this embodiment.
The processing steps of this embodiment include a processing chamber 60 that performs deburring processing on the front and back surfaces of the semiconductors 11 to 14 and 21 to 24, and both surfaces that perform primary cleaning of the semiconductors 11 to 14 and 21 to 24 that have been deburred. Used for the shower 61, the primary cleaning tank 63 for storing cleaning water used for the double-sided shower 61, the cleaning wide gun 62 for performing secondary cleaning of the semiconductors 11 to 14, 21 to 24 after the primary cleaning, and the cleaning wide gun 62 The secondary cleaning tank 64 is configured to store cleaning water.
[0028]
The lead frame 4 having the semiconductors 11 to 14 and 21 to 24 subjected to the deburring process in the processing chamber 60 is cleaned by a double-sided shower 61. On the front and back surfaces of the semiconductors 11 to 14 and 21 to 24 subjected to the deburring process in the processing chamber 60, abrasives and burrs shavings polished by the deburring process are attached. Performs the primary cleaning of these deposits. If this primary cleaning is performed at a high water pressure, the surface of the semiconductors 11 to 14 and 21 to 24 may be damaged by adhering substances, and therefore the water pressure of the double-sided shower 61 in the primary cleaning is made as weak as possible.
[0029]
The lead frame 4 having the semiconductors 11 to 14 and 21 to 24 after the primary cleaning by the double-sided shower 61 is secondarily cleaned by the cleaning wide gun 62. The wide cleaning gun has a plurality of spray ports (not shown), and sprays cleaning water from the spray ports to remove deposits on the front and back surfaces of the semiconductors 11 to 14 and 21 to 24. At the time of the secondary cleaning, rough deposits are removed by the primary cleaning, and the deposits do not damage the surfaces of the semiconductors 11 to 14 and 21 to 24 during the secondary cleaning. Therefore, the water pressure of the cleaning wide gun 62 for the secondary cleaning is set high, and the deposits on the semiconductors 11 to 14 and 21 to 24 can be sufficiently removed.
[0030]
As described above, in this embodiment, the masks 10b and 20b are arranged on the surfaces of the semiconductors 11 to 14 and 21 to 24, and the surfaces having a plurality of injection ports 1a and 1b corresponding one-to-one with the lead portions 3a and 3b. The surface burr is removed by spraying the abrasive from the plurality of injection ports 1a and 1b of the wide deburring gun 1 and applying the abrasive locally and simultaneously to the burrs of the semiconductors 11 to 14 and 21 to 24. The removal wide gun 1 is moved in parallel with the lead portions 3a, 3b to deburr the surfaces of the semiconductors 11-14, 21-24, and similarly, a plurality of injection ports 50a corresponding one-to-one to the lead portions 3a, 3b. , 50b has a deburring process for the back surface of the semiconductor with the wide deburring gun 50 for the back surface, so that the light receiving portions 11a to 14a and 21a to 24a of the semiconductors 11 to 14, 21 to 24 are damaged. It is possible to perform the Ku deburring process.
[0031]
In addition, deburring can be performed by translating a wide gun that integrates multiple injection ports, which simplifies the device configuration and reduces equipment costs, and facilitates position control during deburring operations. Work time can be shortened. Furthermore, even if the number of semiconductors 11 to 14 and 21 to 24 to be deburred is increased, it can be dealt with by increasing the size of the wide gun and increasing the number of injection ports or extending the distance of parallel movement. There is no need to complicate the structure of the apparatus and the process itself depending on the number of semiconductors to be processed.
[0032]
Further, in this embodiment, the deburring process on the surface of the semiconductors 11 to 14 and 21 to 24 is performed by the wide deburring gun 1 for the front surface, and the deburring process on the back surface is performed by the wide deburring gun 50 for the back surface. The output of the abrasive sprayed on the front and back surfaces can be set independently. This makes it possible to set more detailed conditions. In addition, since the power for the parallel movement of the front burr removal wide gun 1 and the back burr removal wide gun 50 is performed by a common motor, the facility can be simplified.
[0033]
Furthermore, in this embodiment, after the deburring process, the semiconductors 11 to 14 and 21 to 24 are primarily cleaned by the double-sided shower, and then the secondary cleaning is performed by the cleaning wide gun 62. Therefore, the light receiving units 11a to 14a, 21a-24a can be prevented from being damaged, and sufficient cleaning can be performed.
[0034]
In this embodiment, the deburring process is performed by disposing the masks 10b and 20b only on the surface portions of the semiconductors 11 to 14 and 21 to 24 having the light receiving portions 11a to 14a and 21a to 24a. It is good also as arrange | positioning a mask.
[0035]
Further, in this embodiment, the deburring of the back surfaces of the semiconductors 11 to 14 and 21 to 24 is performed using a deburring wide gun similarly to the front surface. However, the semiconductors 11 to 14 having the light receiving portions 11a to 14a and 21a to 24a, The deburring of the surfaces 21 to 24 may be performed with a deburring wide gun, and the deburring of the back surfaces of the semiconductors 11 to 14 and 21 to 24 not having the light receiving portions 11a to 14a and 21a to 24a may be performed by a full-surface liquid hawking method.
[0036]
Further, in the present embodiment, the plurality of injection ports installed in the wide gun correspond to one of the lead portions 3a and 3b on a one-to-one basis, but the edge portions of any of the semiconductors 11 to 14, 21 to 24 And one-to-one correspondence. Furthermore, you may make it a some injection port respond | correspond to the edge part of any one semiconductor 11-14, 21-24.
[0037]
In this embodiment, the light receiving portions 11 a to 14 a and 21 a to 24 a of the semiconductors 11 to 14 and 21 to 24 are arranged on the front surface of the lead frame 4, but the semiconductors 11 to 14 are arranged on the back surface of the lead frame 4. You may arrange | position so that 21-24 light-receiving part 11a-14a, 21a-24a may be located. In that case, the masks 10 b and 20 b are installed on the back side of the lead frame 4.
[0038]
【The invention's effect】
As described above, in the present invention, a polishing agent is sprayed from a plurality of spray ports of a wide burr removal gun for a surface having a plurality of spray ports corresponding to each lead portion in a one-to-one correspondence with a mask on the semiconductor surface. Deburring the semiconductor surface by moving the surface deburring gun parallel to the lead part while applying the abrasive locally and simultaneously to the burr parts of the semiconductors, and each lead part is also one-to-one. The deburring process for the backside of the semiconductor is performed using a wide deburring gun for the backside that has a plurality of injection ports that are compatible with the above. The deburring process can be performed without damaging, and the equipment and the processing process are not complicated according to the number of semiconductors processed.
[0039]
In addition, the deburring process for the front surface of the semiconductor is performed with a wide deburring gun for the front surface, and the deburring process for the back surface is performed with a wide deburring gun for the back surface. It is possible to set more detailed conditions. Moreover, since the power for the parallel movement of the front burr removal wide gun and the back burr removal wide gun is performed by a common motor, the equipment can be simplified.
[0040]
Furthermore, since the semiconductor is primarily cleaned by double-sided shower after the deburring process, and then the secondary cleaning is performed by the wide cleaning gun, the light-receiving portion is prevented from being damaged by the cleaning, and sufficient cleaning can be performed.
[Brief description of the drawings]
FIG. 1 is a plan view showing a surface deburring process of a semiconductor according to an embodiment of the present invention.
FIG. 2 is a front view showing a semiconductor surface deburring process in the embodiment of the present invention.
FIG. 3 is a left side view showing a semiconductor surface deburring process in the embodiment of the present invention.
FIG. 4 is a bottom view showing a backside deburring process for a semiconductor according to an embodiment of the present invention.
FIG. 5 is a front view showing a semiconductor backside deburring process in the embodiment of the present invention;
FIG. 6 is a left side view illustrating a semiconductor back surface deburring process in the embodiment of the present invention.
FIG. 7 is a conceptual diagram showing processing steps of this embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Surface burr removal wide gun, 1a ... Injection port, 1b ... Injection port, 11-14 ... Semiconductor, 21-24 ... Semiconductor, 11a-14a ... Light receiving part, 21a-24a ... Light receiving part, 3a ... Lead part, 3b ... Lead part, 4 ... Lead frame, 50 ... Burr removal wide gun for back surface, 61 ... Double-sided shower, 62 ... Wide cleaning gun

Claims

In a semiconductor deburring method for removing semiconductor burrs,
A mask for protecting the semiconductor is installed only on the surface of the semiconductor,
Have a plurality of injection openings corresponding to the respective lead portions of the surface of the lead frame, and the width of the plurality of injection ports, for surface that is set equal to or larger than the width of each lead portion of the surface corresponding to the injection port From the deburring wide gun, the abrasive mixed with the liquid is sprayed locally on the burr part on the surface of the semiconductor,
A back surface having a plurality of injection ports corresponding to each lead portion on the back surface of the lead frame, and the width of the plurality of injection ports set to be equal to or greater than the width of each lead portion on the back surface corresponding to the injection port From the wide burr removal gun for the gun, spray the abrasive mixed with the liquid locally to the burr part on the backside of the semiconductor,
The burr of the semiconductor is removed by moving the deburring wide cancer and the back for deburring wide cancer for said surface,
Cleaning the semiconductor by shower;
A semiconductor deburring method for cleaning the semiconductor with a wide cleaning gun.

The back for deburring wide cancer and deburring wide cancer for said surface, the semiconductor deburring method according to claim 1, characterized in that driven by the same motor.

The jet port of the surface deburring wide gun has a one-to-one correspondence with each lead portion of the surface ,
2. The semiconductor deburring method according to claim 1 , wherein the jet port of the backside deburring wide gun has a one-to-one correspondence with each lead portion on the backside .

2. The semiconductor deburring method according to claim 1, wherein the abrasive has a mixture of glass beads and resin beads.

In a wide deburring gun that removes semiconductor burrs
A wide burr removal width for a surface having a plurality of ejection openings corresponding to each lead portion on the surface on the lead frame, and the width of the plurality of ejection openings being set to be equal to or greater than the width of each corresponding lead portion on the surface. With cancer,
Deburring for back surface having a plurality of injection ports corresponding to each lead portion on the back surface on the lead frame, and the width of the plurality of injection ports set to be equal to or greater than the width of each corresponding lead portion on the back surface. With a wide gun,
The surface deburring wide gun for the surface locally sprays the abrasive mixed with the liquid from the spray port onto the burr portion on the surface of the semiconductor,
The back surface deburring wide gun is locally sprayed from the spray port with an abrasive mixed with a liquid to the burr portion on the back surface of the semiconductor,
The deburring wide gun in which the front deburring wide gun and the rear deburring wide gun move in parallel with the front lead portion and the rear lead portion .

The jet port of the surface deburring wide gun has a one-to-one correspondence with each lead portion of the surface ,
6. The wide deburring gun according to claim 5 , wherein the spray port of the wide deburring gun for back surface has a one-to-one correspondence with each lead portion on the back surface .