JP4470518B2 - Method for manufacturing plasma display panel - Google Patents

Description

  The present invention relates to a method for manufacturing a PDP and a substrate holder for forming a film on a substrate for a plasma display panel (hereinafter referred to as PDP) known as a thin, lightweight display device having a large screen.

  The PDP generates an ultraviolet ray by gas discharge and performs image display by exciting a phosphor with the ultraviolet ray to emit light.

  PDPs are broadly classified into AC and DC types as drive systems, and surface discharge and counter discharge types as discharge systems, and easy manufacturing with high definition, large screen, and simple structure. Therefore, at present, an AC type and a surface discharge type PDP having a three-electrode structure are mainly used. An AC type surface discharge PDP is composed of a front plate and a back plate. The front plate has a display electrode composed of a scan electrode and a sustain electrode on a substrate such as glass, a dielectric layer covering the display electrode, and a protective layer covering the display electrode. On the other hand, the back plate has a plurality of address electrodes, a dielectric layer covering the address electrodes, a partition on the dielectric layer, and a phosphor layer provided on the dielectric layer and on the side of the partition. The front plate and the back plate are arranged to face each other so that the display electrode and the address electrode are orthogonal to each other, and a discharge cell is formed at the intersection of the display electrode and the address electrode.

  Such a PDP is capable of high-speed display compared to a liquid crystal panel, has a wide viewing angle, is easy to increase in size, and is self-luminous, so that the display quality is high. Recently, it has attracted particular attention among panel displays, and is used for various purposes as a display device at a place where many people gather or a display device for enjoying a large screen image at home.

In the above configuration, for example, the protective layer on the front plate, the display electrode, the address electrode on the back plate, and the like are formed by a film forming method such as vapor deposition or sputtering (for example, see Non-Patent Document 1).
2001 FPD Technology Taizen, Electronic Journal, Inc., October 25, 2000, p576-p580, p585-p588, p598-p600, p629-p648

  As described above, when forming a film on the front plate and the back plate of the PDP, for example, for the purpose of continuously forming the substrate, while holding the substrate by the substrate holder, The substrate holder is brought into contact with or connected to a conveyance means such as a conveyance roller, a wire, or a chain, and the film is formed while conveying the substrate.

  Therefore, since it is such a conveyance form, a board | substrate holder becomes a bigger size than a board | substrate, Furthermore, it forms into a film | membrane also in areas other than the part covered with the board | substrate of a board | substrate holder, and a film | membrane adheres. In this region, if the film formation is repeated and the attached film thickness increases, a part of the film is lost and becomes a dust generation source in the film forming apparatus. For this reason, the dust of the film forming apparatus is caught in the film or mixed in the film raw material, which adversely affects the film quality and film uniformity.

  As a means for solving the above-described problems, there is a method of periodically removing a film attached to the substrate holder before the attached film becomes thick and missing. However, the screen size of the PDP is a large screen such as 42 inches or 50 inches, and the substrate is also heavy. For this reason, the substrate holder is also large, and is a heavy object that supports a large heavy substrate and has rigidity sufficient to stably convey the substrate. Therefore, handling of the substrate holder during the removal of the film as described above has become a very heavy labor, which has become a factor that makes the operation difficult and inefficient. In addition, the removal work needs to be performed by removing the substrate holder from the flow of the film formation process, and it is necessary to interrupt the film formation process while removing the film, which has been a cause of hindering production efficiency. .

  The present invention has been made in view of such problems, and in order to realize a good image display of a display device using a PDP, the film forming device that adversely affects the film quality in film formation on a PDP substrate. The purpose is to suppress the generation of dust inside.

In order to achieve the above object, a method for producing a PDP according to the present invention transports a substrate by holding a substrate holder holding a PDP substrate in contact with or connected to a transport means included in a film forming apparatus. a method of manufacturing a PDP for forming a film, the substrate holder is composed of a first substrate holder and the second substrate holder, a first substrate holder may have a plurality of frame bodies The frame and the substrate hold the substrate and the dummy substrate, and the second substrate holder holds the first substrate holder at its outer peripheral portion, and the transfer means only at both ends of the second substrate holder The entire substrate holder is conveyed by contacting or connecting to the substrate .

  According to such a manufacturing method, it is possible to realize high-quality film quality by suppressing dust generation due to falling off from the substrate holder during film formation.

Furthermore, the dummy substrate is held in the frame so as to deposit a portion of the vapor flow in the film forming apparatus that flies in a region other than the substrate held in the frame.
It is characterized by that.

It is desirable that the substrate and the dummy substrate are held at the peripheral edge of the frame body, and the adhesion region of the film to the substrate holder is reduced, and the exchange of the substrate and the dummy substrate is facilitated to suppress dust generation. be able to.

Further, the frame has a supporting means for placing and holding the peripheral portion of the plate-like object and a restricting means for restricting the peripheral position of the plate-like object, and supports the substrate and the dummy substrate by inserting them into the restricting means. You may hold | maintain by the peripheral part of a frame by hold | maintaining on a means. Therefore, the substrate and the dummy substrate can be held with high positional accuracy and can be held without damage to the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, when forming into a film | membrane on PDP board | substrate, generation | occurrence | production of the dust in the film-forming apparatus which has a bad influence on film quality can be suppressed, and PDP which can display a favorable image is realizable.

  Hereinafter, a method for manufacturing a PDP according to an embodiment of the present invention will be described with reference to the drawings.

  First, an example of the structure of the PDP will be described. FIG. 1 is a cross-sectional perspective view showing a schematic configuration of a PDP manufactured by a method of manufacturing a PDP according to an embodiment of the present invention.

  The front plate 2 of the PDP 1 includes a display electrode 6 composed of a scanning electrode 4 and a sustain electrode 5 formed on one main surface of a transparent and insulating substrate 3 such as glass on the front side, and the display electrode 6. It has a dielectric layer 7 to be covered and a protective layer 8 made of, for example, MgO for covering the dielectric layer 7. Scan electrode 4 and sustain electrode 5 have a structure in which bus electrodes 4b and 5b made of a metal material such as Ag are stacked on transparent electrodes 4a and 5a for the purpose of reducing electric resistance.

  The back plate 9 includes an address electrode 11 formed on one main surface of an insulating substrate 10 such as glass on the back side, a dielectric layer 12 covering the address electrode 11, and the dielectric layer 12. The barrier ribs 13 are provided at positions corresponding to the adjacent address electrodes 11 and the phosphor layers 14R, 14G, and 14B between the barrier ribs 13.

  The front plate 2 and the back plate 9 are opposed to each other so that the display electrode 6 and the address electrode 11 are orthogonal to each other with the partition wall 13 interposed therebetween, and the periphery outside the image display area is sealed with a sealing member (not shown). It has stopped. A discharge space 15 formed between the front plate 2 and the back plate 9 is filled with, for example, a Ne-Xe 5% discharge gas at a pressure of 66.5 kPa (about 500 Torr). The intersection between the display electrode 6 and the address electrode 11 in the discharge space 15 becomes a discharge cell 16 (unit light emitting region).

  Next, a manufacturing method of the above-described PDP 1 will be described with reference to FIGS.

  The front plate 2 first forms the scan electrodes 4 and the sustain electrodes 5 in a stripe pattern on the substrate 3. Specifically, an ITO film or the like is formed on the substrate 3 by using a film forming method such as vapor deposition or sputtering, and then patterned by a photolithography method or the like to form the transparent electrodes 4a and 5a in stripes. Further, a film made of, for example, Ag is formed thereon using a film forming method such as vapor deposition or sputtering, and then patterned by a photolithography method or the like, thereby forming bus electrodes 4b and 5b in a stripe shape. As described above, the display electrode 6 including the stripe-shaped scanning electrode 4 and the sustain electrode 5 can be formed.

Next, the display electrode 6 formed as described above is covered with a dielectric layer 7. The dielectric layer 7 is formed by applying a paste containing a lead-based glass material by, for example, a screen printing method, and then firing the paste at a predetermined temperature (for example, 560 ° C.) for a predetermined time (for example, 20 minutes). It is formed to have a thickness (for example, about 20 μm). Examples of the paste containing the lead-based glass material include PbO (70 wt%), B ₂ O ₃ (15 wt%), SiO ₂ (10 wt%), and Al ₂ O ₃ (5 wt%) and an organic binder (for example, , Α-terpineol in which 10% ethyl cellulose is dissolved). Here, the organic binder is obtained by dissolving a resin in an organic solvent. In addition to ethyl cellulose, an acrylic resin can be used as the resin, and butyl carbitol can be used as the organic solvent. Furthermore, you may mix a dispersing agent (for example, glyceryl trioleate) in such an organic binder.

  Next, the dielectric layer 7 formed as described above is covered with a protective layer 8. The protective layer 8 is made of, for example, MgO, and is formed so as to have a predetermined thickness (for example, about 0.5 μm) by a film forming method such as vapor deposition or sputtering.

  On the other hand, the back plate 9 has address electrodes 11 formed in stripes on a substrate 10. Specifically, a film made of a material of the address electrode 11, for example, Ag, is formed on the substrate 10 by a film forming method such as vapor deposition or sputtering, and then patterned using a photolithography method or the like.

  Next, the address electrode 11 is covered with a dielectric layer 12. For example, the dielectric layer 12 is coated with a paste containing a lead-based glass material by, for example, a screen printing method, and then baked at a predetermined temperature (for example, 560 ° C.) and for a predetermined time (for example, 20 minutes). It is formed to have a thickness (for example, about 20 μm).

  Next, the partition wall 13 is formed in a stripe shape, for example. As with the dielectric layer 12, the partition wall 13 is formed by repeatedly applying a paste containing a lead-based glass material in a predetermined pattern by, for example, a screen printing method and then baking the paste. Here, the dimension of the gap of the partition wall 13 is about 130 μm to 240 μm in the case of an HD-TV of 32 inches to 50 inches, for example.

  And in the groove | channel between the partition 13 and the partition 13, fluorescent substance layer 14R, 14G, 14B comprised by the fluorescent substance particle | grains which light-emit in each color of red (R), green (G), and blue (B) is provided. Form. The phosphor layers 14R, 14G, and 14B are coated with paste-like phosphor ink composed of phosphor particles of each color and an organic binder, and baked at a temperature of, for example, 400 ° C. to 590 ° C. to burn off the organic vanida. By doing so, each phosphor particle is bound and formed.

The front plate 2 and the back plate 9 manufactured as described above are overlapped so that the display electrodes 6 of the front plate 2 and the address electrodes 11 of the back plate 9 are orthogonal to each other, and on the outer periphery of the image display area, For example, a sealing member such as sealing glass is inserted, and this is sealed, for example, by baking at about 450 ° C. for 10 minutes to 20 minutes. Then, after the inside of the discharge space 15 is evacuated to a high vacuum (for example, 1.1 × 10 ⁻⁴ Pa), a discharge gas such as a He—Xe-based or Ne—Xe-based inert gas is used for a predetermined amount. PDP1 is produced by sealing with pressure.

  As described above, many film forming methods are used in the manufacturing process of the PDP 1. Therefore, the film forming method will be described with reference to an example of the structure of the film forming apparatus shown in FIG. 2, taking as an example the case where the protective layer 8 made of MgO is formed by vapor deposition. FIG. 2 is a cross-sectional view showing a schematic configuration of a film forming apparatus 20 for forming the protective layer 8 in the embodiment of the present invention.

  The film forming apparatus 20 deposits MgO on the substrate 3 of the PDP 1 to form a protective layer 8 of the MgO thin film, and preheats the substrate 3 and puts it into a pre-exhaust before putting it into the deposition chamber 21. And a substrate take-out chamber 23 for cooling the substrate 3 taken out after the vapor deposition in the vapor deposition chamber 21 is completed. Each of the substrate loading chamber 22, the vapor deposition chamber 21, and the substrate take-out chamber 23 has a sealed structure so that the inside can be in a vacuum atmosphere, and each chamber is provided with an evacuation system 24a, 24b, 24c independently. Yes.

  Further, a conveying means 25 such as a conveying roller, a wire, or a chain is disposed through the substrate loading chamber 22, the vapor deposition chamber 21, and the substrate take-out chamber 23. Between the deposition apparatus 20 (outside air) and the substrate loading chamber 22, between the substrate loading chamber 22 and the deposition chamber 21, between the deposition chamber 21 and the substrate ejection chamber 23, and between the substrate ejection chamber 23 and the deposition apparatus 20. The outside is partitioned by partition walls 26a, 26b, 26c, and 26d that can be opened and closed. By interlocking the driving of the transport means 25 and the opening and closing of the partition walls 26a, 26b, 26c, and 26d, the fluctuations in the respective vacuum degrees of the substrate loading chamber 22, the vapor deposition chamber 21, and the substrate extraction chamber 23 are minimized. The substrate 3 is passed from the outside of the film forming apparatus 20 in the order of the substrate loading chamber 22, the vapor deposition chamber 21, and the substrate take-out chamber 23, performs predetermined processing in each chamber, and then is carried out of the film forming apparatus 20.

  Further, heating lamps 27 a and 27 b for heating the substrate 3 are respectively installed in the substrate loading chamber 22 and the vapor deposition chamber 21.

  In addition to the apparatus configuration described above, for example, there is one substrate heating chamber for heating the substrate 3 between the substrate loading chamber 22 and the vapor deposition chamber 21 according to the setting conditions of the temperature profile of the substrate 3. There may be one having the above, or one having one or more substrate cooling chambers between the vapor deposition chamber 21 and the substrate take-out chamber 23.

  Further, the vapor deposition chamber 21 is provided with introducing means 28 for introducing a gas containing oxygen for making the atmosphere during vapor deposition an oxygen atmosphere so that MgO deposited does not become Mg due to oxygen deficiency. is doing. Further, the deposition chamber 21 is provided with a hearth 29b containing particles of MgO as a deposition source 29a, an electron gun 29c, a deflection magnet (not shown) for applying a magnetic field, and the like. The electron beam 29d irradiated from the electron gun 29c is deflected by the magnetic field generated by the deflection magnet and irradiated to the vapor deposition source 29a, thereby generating a vapor flow 29e of MgO as the vapor deposition source 29a. Then, the generated vapor flow 29e is deposited on the surface of the substrate 3 to form the protective layer 8 of MgO. The steam flow 29e can be blocked by the shutter 29f except when necessary.

  In the film forming apparatus 20 described above, the substrate 3 is transported while being held by the substrate holder 30. The substrate holder 30 holds the first substrate holder 31 for holding the substrate 3 and the first substrate holder 31 at the outer peripheral portion thereof, and contacts or is connected to the transport means 25 of the film forming apparatus 20. Thus, the second substrate holder 32 for conveying the entire substrate holder 30 is provided, and the substrate 3 is conveyed by conveying the entire substrate holder 30.

  Next, the substrate holder 30 will be described with reference to FIGS.

  FIG. 3A shows a plan view of a schematic configuration of the first substrate holder 31, and FIG. 3B shows a cross-sectional view taken along line AA in FIG. FIG. 4A shows a plan view of a schematic configuration of the second substrate holder 32, and FIG. 4B shows a cross-sectional view taken along line AA in FIG. 4A. FIG. 5A shows a substrate holder in which the substrate 3 and the dummy substrate 35 are held by the first substrate holder 31, and the first substrate holder 31 is held by the second substrate holder 32. It is a top view of 30 schematic structure. FIG. 5B is a cross-sectional view taken along the line AA in FIG.

  As shown in FIG. 3, the first substrate holder 31 has a structure in which a plurality of frame bodies 33 that hold a plate-like object such as the substrate 3 at its peripheral edge are arranged. Here, as a structure in which a plurality of frame bodies 33 are arranged, for example, a structure configured by combining a plurality of frames each having a frame shape, a structure configured by combining linear objects, or a board, Various structures such as those formed by cutting out a shaped object and providing a hole can be mentioned. Here, the frame 33 has a holding means 34 for holding a plate-like object such as the substrate 3.

  FIG. 6 shows an enlarged part of the frame 33 as a schematic structure of an example of the holding means 34. As shown in FIG. 6, the frame 33 has an L-shaped or inverted T-shaped cross section, and the horizontal cross section of the frame 33 serves as support means 34 a that supports a plate-like object such as the substrate 3 from below. Yes. Further, the vertical cross section of the frame 33 functions as a restricting means 34 b that restricts the position of the plate-like object such as the substrate 3 in the surface direction. As a result, the plate-like object such as the substrate 3 is held by being fitted into the regulating means 34 b and placed on the support means 34 a, and the frame 33 also serves as the holding means 34.

  Moreover, as another structure of the holding means 34, a structure as shown in FIG. 7 may be used. That is, the frame of the support means 34a that supports a plate-like object such as the substrate 3 provided on the lower surface side of the frame 33 from below and the regulation means 34b that regulates the position of the plate-like object such as the substrate 3 in the surface direction. A structure in which a plate-like object such as the substrate 3 is formed by being fitted to the regulating means 34b and placed on the supporting means 34a can be exemplified.

  Further, as another structure of the holding means 34, a configuration as shown in FIG. That is, a restricting unit 34b that is provided on the upper surface side of the frame 33 and restricts the position of the plate-like object such as the substrate 3 in the surface direction, and a support unit 34a that supports the plate-like object such as the substrate 3 from below. That is, it is constituted by the frame portion of the frame 33. A structure in which a plate-like object such as the substrate 3 is held by being fitted into the regulating means 34b and placed on the supporting means 34a can be mentioned.

  In the first substrate holder 31, the frame 33 having the holding means 34 as described above causes the substrate 3 as a film formation target and the vapor flow 29e from the hearth 29b of the film forming apparatus 20 to flow. Among them, the dummy substrate 35 for depositing the amount of flight to the region other than the substrate 3 is held. In other words, it is not necessary to hold the dummy substrate 35 on all the frame bodies 33 as long as the flying portion can be deposited on the region other than the substrate 3.

  As shown in FIG. 4, the second substrate holder 32 holds the first substrate holder 31 at the outer periphery thereof. In this state, the entire substrate holder 30 is transferred by contacting or connecting to the transfer means 25 of the film forming apparatus 20. Therefore, the second substrate holder 32 has a structure having the strength necessary for securely holding the substrate 3 via the first substrate holder 31 and realizing the stability of the conveyance. ing.

  Then, the substrate holder 30 holding the substrate 3 is transported through the film forming apparatus 20 by the transport means 25, thereby forming a film on the substrate 3. As a result, the film is formed by film formation on the frame 33 of the first substrate holder 31 and on the substrate 3 and the dummy substrate 35 held thereby, but the width of the frame 33 is reduced. As a result, most of the film formation can be performed on the substrate 3 and the dummy substrate 35.

  Next, an example of the flow of film formation will be described with reference to FIGS. First, as shown in FIG. 5, the substrate 3 and the dummy substrate 35 are held by the first substrate holder 31, and the first substrate holder 31 is held by the second substrate holder 32 to hold the substrate. The tool 30 is comprised. The substrate holder 30 is put into a substrate loading chamber 22 of a film forming apparatus 20 as shown in FIG. 2, and heated by a heating lamp 27a while being pre-evacuated by a vacuum evacuation system 24a. Here, the substrate 3 is in a state where the display electrode 6 and the dielectric layer 7 are formed.

  When the inside of the substrate loading chamber 22 reaches a predetermined degree of vacuum, the partition wall 26b is opened and the heated substrate 3 is held in the vapor deposition chamber 21 while being held by the substrate holder 30 using the transfer means 25. Transport.

  In the vapor deposition chamber 21, the substrate 3 is heated by the heating lamp 27b to keep it at a constant temperature. This temperature is set to about 100 ° C. to 400 ° C., for example, so that the display electrode 6 and the dielectric layer 7 are not thermally deteriorated. Then, with the shutter 29f closed, the electron source 29a is irradiated with an electron beam 29d from the electron gun 29c and preheated to degas the vapor deposition source 29a, and then a gas containing oxygen is introduced from the introduction means 28. To do. When the shutter 29f is opened in this state, the MgO vapor flow 29e is irradiated toward the substrate 3 and the dummy substrate 35 (not shown in FIGS. 1 and 2) held by the substrate holder 30. As a result, an MgO vapor deposition film is formed on the substrate 3 and the dummy substrate 35 held by the first substrate holder 31. At this time, the frame body 33 of the first substrate holder 31 is formed on the frame body 33 because the frame body 33 has a width sufficient to place the substrate 3 and the dummy substrate 35 on the peripheral edge thereof. Very little film is done.

  The deposited film of MgO formed on the substrate 3 becomes the protective layer 8. When the thickness of the protective layer 8, which is an MgO vapor deposition film, reaches a predetermined value (for example, about 0.5 μm), the shutter 29 f is closed, and the substrate 3 is transferred to the substrate extraction chamber 23 through the partition wall 26 c. Here, the transport means 25 has a structure in which, for example, it is transported in contact with or connected to both end portions of the second substrate holder 32 of the substrate holder 30. The problem of the quality of the film formed on the substrate 3 due to the influence of the conveying means 25 is suppressed.

  Thereafter, after the substrate 3 is cooled to a predetermined temperature or lower in the substrate take-out chamber 23, the substrate 3 is taken out from the holding means 34 of the frame 33 of the first substrate holder 31 of the substrate holder 30. Here, in the present embodiment, since the substrate 3 is configured to be held by being placed on the support means 34 a provided in the frame 33, the substrate 3 is also moved upward from the frame 33. All you have to do is pull it up and it's very easy.

  The substrate 3 is required to be handled so as not to cause scratches on the surface. From such a point of view, a structure in which a buffer member 34c is provided, for example, as shown in FIG. That is, by using a material whose hardness is lower than that of the substrate 3 as the buffer member 34c, an effect of not scratching the substrate 3 can be obtained. Furthermore, by using a material having a lower thermal conductivity than that of the frame 33, it is possible to obtain an effect that the temperature distribution of the substrate 3 becomes uniform. The buffer member 34c is preferably configured to be replaceable according to its deterioration.

  Then, the substrate holder 30 after removing the substrate 3 on which vapor deposition has been completed holds the new non-film-formed substrate 3 and then is re-inserted into the film forming apparatus 20. At this time, the MgO film is attached to the dummy substrate 35 of the first substrate holder 31, but depending on the state, that is, the amount of the MgO film attached to the dummy substrate 35 is large, so If it is determined that peeling will occur, only the dummy substrate 35 is replaced. This makes it possible to remove the film attached to unnecessary portions other than the substrate 3 before it becomes dust in the vapor deposition chamber 21 due to peeling or the like. In addition, according to this invention, since the quantity of the film | membrane adhering on the frame 33 of the 1st board | substrate holder 31 and the 2nd board | substrate holder 32 decreases, the necessity for replacement | exchange or washing | cleaning is low. Here, the replacement of the dummy substrate 35 may be determined each time, or may be periodically replaced after a predetermined number of film formations from past data. Further, all the dummy substrates 35 may be replaced at the same time, or may be partially replaced depending on the adhesion state of the film.

  Here, the replacement of the dummy substrate 35 is performed after leaving the substrate take-out chamber 23 and before being re-introduced into the substrate insertion chamber 22, and even when the substrate 3 is held by the frame 33, only the dummy substrate 35 is replaced. It can be removed. Even in this replacement, since the dummy substrate 35 is configured to be held by being placed on the support means 34 a provided on the frame body 33, the dummy substrate 35 can be taken out simply by pulling it up above the frame body 33. The work is very simple and the workability is improved.

  That is, according to the present embodiment, the removal of the film attached to the substrate holder 30 other than the substrate 3 is performed in the flow of the film forming process without removing the substrate holder 30 from the flow of the film forming process. Thus, it is possible to carry out by a very simple operation of exchanging only the dummy substrate 35 of the first substrate holder 31. In view of the above, it is preferable that the dummy substrate 35 has a size or a number that does not become a burden at the time of replacement, and the size and number of the frame 33 of the first substrate holder 31 are configured accordingly.

  Note that the replacement of the dummy substrate 35 for removing the film attached to the portion other than the substrate 3 of the substrate holder 30 may be performed by interrupting the flow of the film forming process. Even in such a case, since the configuration of the substrate holder 30 is as described above, the film removal operation can be simplified as compared with the case where the substrate holder having the conventional configuration is used. The interruption period is short.

  The first substrate holder 31 has a structure in which a plurality of frame bodies 33 are arranged. However, since the transfer in the film forming apparatus 20 is performed via the second substrate holder 32, the substrate can be stably transferred. 3 can be reduced.

  Note that the deposition of MgO in the deposition chamber 21 on the substrate 3 may be performed in a state where the transportation is stopped and stopped or may be performed while the transportation is being performed.

  Further, the structure of the film forming apparatus 20 is not limited to the above-described structure, but a structure in which a buffer chamber is provided between the chambers for tact adjustment, a structure in which chamber chambers for heating and cooling are provided, or a batch type. The effect of the present invention can also be obtained for a structure in which the substrate holder 30 is installed in the chamber to form a film. In addition, when installing the substrate holder 30 in a chamber by a batch type, the structure which installs the substrate holder 30 in the holding means provided in the chamber, or the structure which installs only the 1st substrate holder 31 And so on. When only the first substrate holder 31 is installed, the second substrate holder 32 can be a holding means provided in the chamber.

  In the present embodiment, the film formation of MgO is particularly described. However, the following effects are further exhibited in the film formation of MgO. That is, since the MgO film has a gas adsorbing property such as moisture and carbon dioxide, the gas adsorbed by the MgO film adhering to the substrate holder is released again at the time of vapor deposition, and the gas partial pressure in the vapor deposition chamber fluctuates, which is good. There arises a problem that it is difficult to form the MgO film. However, according to the present invention, it is possible to suppress the amount of adsorbed gas by exchanging the dummy substrate. Therefore, it is possible to easily realize a stable film formation of the MgO film.

  In the above description, the case where the protective layer 8 is formed using MgO has been described as an example. However, the present invention is not limited to this, and the same applies to film formation when the display electrode 6 and the address electrode 11 are formed using ITO, Ag, or the like. The effect of can be obtained.

  In the above description, the electron beam evaporation method has been shown as an example of the film formation method. However, the same applies not only to the electron beam evaporation method but also to a film formation method such as ion plating using a hollow cathode method and sputtering. An effect can be obtained.

  As described above, according to the present invention, it is useful as a method for manufacturing a PDP that can easily suppress the generation of dust in a film forming apparatus that adversely affects the film quality during film formation on a PDP substrate. A plasma display device having excellent display performance can be realized.

Sectional perspective view which shows schematic structure of PDP using the manufacturing method of PDP in embodiment of this invention Sectional drawing which shows schematic structure of the film-forming apparatus used for the manufacturing method of PDP in embodiment of this invention (A) Top view which shows schematic structure of the 1st board | substrate holder used for manufacture of PDP in embodiment of this invention (b) AA sectional drawing of Fig.3 (a). (A) Top view which shows schematic structure of the 2nd board | substrate holder used for manufacture of PDP in embodiment of this invention (b) AA sectional drawing of Fig.4 (a). (A) Top view which shows schematic structure of the board | substrate holder used for manufacture of PDP in embodiment of this invention (b) AA sectional drawing of Fig.5 (a) The perspective view which shows schematic structure of the holding means of the board | substrate holder used for manufacture of PDP in embodiment of this invention The perspective view which shows the other schematic structure of the holding means of the board | substrate holder used for manufacture of PDP in embodiment of this invention The perspective view which shows the other schematic structure of the holding means of the board | substrate holder used for manufacture of PDP in embodiment of this invention The perspective view which shows the other schematic structure of the holding means of the board | substrate holder used for manufacture of PDP in embodiment of this invention

Explanation of symbols

1 PDP
2 Front plate 3, 10 Substrate 4 Scan electrode 4a, 5a Transparent electrode 4b, 5b Bus electrode 5 Sustain electrode 6 Display electrode 7, 12 Dielectric layer 8 Protective layer 9 Back plate 11 Address electrode
13 Partition 14R, 14G, 14B Phosphor layer 15 Discharge space 16 Discharge cell 20 Deposition device 21 Deposition chamber 22 Substrate loading chamber 23 Substrate take-out chamber 24a, 24b, 24c Vacuum exhaust system 25 Transport means 26a, 26b, 26c, 26d Partition Wall 27a, 27b Heating lamp 28 Introduction means 29a Deposition source 29b Hearth 29c Electron gun 29d Electron beam 29e Vapor flow 29f Shutter 30 Substrate holder 31 First substrate holder 32 Second substrate holder 33 Frame body 34 Holding means 34a Supporting means 34b Restricting means 34c Buffer member 35 Dummy substrate

Claims (4)

A substrate holder holding a substrate of a plasma display panel is a method for manufacturing a plasma display panel for transporting the substrate and forming a film by contacting or connecting with a transport means provided in the film forming apparatus ,
The substrate holder comprises a first substrate holder and a second substrate holder,
The first substrate holder may have a plurality of frame body, to hold the substrate and the dummy substrate in the frame body,
The second substrate holder holds the first substrate holder at its outer periphery,
By contacting or connecting with the transport means only at both ends of the second substrate holder, the entire substrate holder is transported.
A method of manufacturing a plasma display panel. The dummy substrate is held in the frame so as to deposit a portion of the vapor flow in the film forming apparatus that flies in a region other than the substrate held in the frame.
The method of manufacturing a plasma display panel according to claim 1. 3. The method for manufacturing a plasma display panel according to claim 1, wherein the substrate and the dummy substrate are held at a peripheral edge of the frame. The frame has support means for placing and holding the peripheral edge of the plate-like object, and restriction means for restricting the peripheral position of the plate-like object, and the substrate and the dummy substrate are fitted into the restriction means to by being held on the support means, the manufacturing method of the plasma display panel according to any one of claims 1 to 3, characterized in that it is held at the periphery of the frame.

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