JP4515398B2 - Display device - Google Patents

Description

The present invention relates to a light-emitting device using a light-emitting element in which fluorescence or phosphorescence is obtained by applying an electric field to an element in which a film containing an organic compound (hereinafter referred to as an “organic compound layer”) is provided between a pair of electrodes. It relates to a manufacturing method thereof. In particular, the present invention relates to a light emitting device in which light emitting elements are arranged in an active matrix and light emission from the light emitting elements is performed on both sides.

In recent years, research on a light-emitting device having an EL element as a self-luminous light-emitting element has been activated. This light emitting device is also called an organic EL display or an organic light emitting diode.
These light-emitting devices have features such as fast response speed, low voltage, and low power consumption driving suitable for moving image display, so next-generation displays such as new-generation mobile phones and personal digital assistants (PDAs) It is attracting a lot of attention.

Note that EL elements emit luminescence generated by applying an electric field (Electro Luminesc
ence) includes an organic compound-containing layer (hereinafter referred to as an EL layer), an anode, and a cathode. It is known that luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state.

Unlike a liquid crystal display device that requires a backlight, an organic EL panel having an organic EL element has a feature that there is no problem of viewing angle because it is a self-luminous type. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and use in various forms has been proposed.

Conventionally, a polarizing plate or a circularly polarizing plate is used in an organic EL panel having an organic EL element. (For example, refer to Patent Document 1). This is because the external light is reflected on the electrodes formed in the display portion and the visibility of the image is lowered. In particular, when not displayed, the electrode becomes a mirror surface, and the background is reflected. Further, there are problems that the contrast is lowered and it is difficult to display black even when the display is being performed.

In addition, a film that gives a half-wave retardation to monochromatic light is laminated to function as a half-wave plate as a whole, or a film that gives a half-wave retardation, and a quarter wavelength. And a circularly polarizing plate having such a laminated wave plate that functions as a quarter wave plate as a whole (see, for example, Patent Document 2).
reference).
Patent registration No. 2761453 Patent registration No. 3174367

As an example of an electronic device having an EL element in a display portion, a mobile phone can be given. With recent increases in the amount of information and functions of mobile phones, a panel having an EL element and a panel having a liquid crystal element are overlaid, or panels having a liquid crystal element are overlaid, The main screen and the sub screen can be displayed.

However, when displaying the main screen and the sub screen by overlapping the panels as described above,
The total weight of electronic devices was heavy, and the thickness size of electronic devices was becoming thicker. In addition, a driving circuit and FPC for two panels are required for the main screen and the sub-screen, and the number of components is increased, resulting in a complicated structure of the electronic device.

In view of the above, an object of the present invention is to provide a light emitting device having a new structure which has a plurality of display surfaces and achieves light weight and thickness reduction. Further, the problem of the light emitting device due to this new configuration is also solved.

In view of the above problems, there is provided a light emitting device (hereinafter, referred to as a dual emission display device) in which a display from the front side and a display from the rear side are displayed on one panel having a light emitting element. . The dual emission type display device can recognize light emitted from one light emitting element from the side where the semiconductor element is provided (rear side) and the side facing it (front side). Therefore, by mounting the dual emission display device, the thickness of the electronic device having a plurality of display screens can be reduced, and the weight can be reduced and the number of components can be reduced.

In addition, the dual emission display device has the same display size for both of the two-screen displays, and can perform high-definition display with the same image quality level. The power consumption is equivalent to one panel even if two screens are displayed. Further, since a common video signal is used in the dual emission display device, 2
Both screen displays are the same display image except that they are reversed left and right.

The dual emission type display device is technically different from a conventional mobile phone, that is, a configuration in which two panels (a panel having a liquid crystal element or a panel having an EL element) are used for two-screen display. It is. When two panels having EL elements are simply mounted, panel 2
One manufacturing cost and one mounting cost are required, video signals for two panels must be prepared, and power consumption for two panels is required. In addition, in the conventional mobile phone, the main screen and the sub-screen are separated, and the sub-screen is smaller than the main screen and displays only simple characters and simple images. there were.

In a dual emission display, light emitted through the cathode and anode passes through various layers or substrates. For example, in the case of an active matrix light-emitting device, since a switching element such as a TFT is provided on the cathode side or the anode side, a TFT interlayer insulating film (silicon nitride film or organic resin film) or the like is formed on the cathode side or the anode side. Accordingly, the number of stacked layers to be passed from the light emitting point is different. When the sealing substrate is bonded, the optical distance, that is, the distance from the light emitting point to the surface of the sealing substrate is different from the distance from the light emitting point to the element substrate.

When light is emitted on both sides, the optical characteristics (color tone, etc.) of the light emission from the upper surface and the light emission from the lower surface are due to the interference effect due to the difference in optical distance and the difference in transmittance due to the difference between the cathode material and the anode material. It can make a difference. When the cathode and anode are made of materials having different transmittances, and a full-color light emitting display device is manufactured using three types of light emitting elements (EL elements) of red, green, and blue, the color coordinates are emitted from the top surface. There is a problem that the light emission from the lower surface greatly differs. If the color coordinates are different between the upper surface and the lower surface, it is impossible to perform the same gradation display on the upper surface and the lower surface.

Therefore, in the dual emission display device, the color tone of the light emission from the upper surface and the light emission from the lower surface is made the same by adjusting the materials and film thicknesses of the three types (R, G, B) of light emitting elements. The present inventors have found that this is possible and have reached the present invention. In the present invention, at least both electrodes of the light-emitting element (the cathode and the anode of the light-emitting element) have the same high translucency. Then, the problem of reflection of external light by the electrode is reduced, but a new problem that black display (black display) is difficult occurs. This is because both electrodes (the cathode and the anode of the light emitting element) have translucency, so that the other side is transparent in black display, that is, in an off state where no display is performed. When there is a light source on the back side, the black light display becomes difficult due to the transmitted light, and the contrast is also reduced.

As described above, some new problems have occurred in the dual emission display device. Therefore, an object of the present invention is to provide a full-color dual emission display device in which the color tone is uniform for both the light emission to the upper surface and the light emission to the lower surface. In addition, an object of the present invention is to provide a dual-emission display device that can perform clean black display and has high contrast.

Therefore, the present invention is characterized in that a dual emission display device includes a polarizing plate or a circularly polarizing plate on the emission surface. In addition, the present invention adjusts the material or film thickness of the dual emission display device to make the color tone uniform for both the light emission to the upper surface and the light emission to the lower surface. Since the optical distance varies depending on each wavelength, in the case of full color, the material or film thickness of the layer containing an organic compound is adjusted for each of RGB. According to the present invention, it is possible to solve the problem of color misalignment of display on both sides in a new configuration of a full-color dual emission display device.

The configuration of the invention disclosed in this specification is as follows.
A light-emitting device having a plurality of light-emitting elements each having a cathode, a layer containing an organic compound, and an anode,
A light emitting element group including a red light emitting element that emits light in response to an input signal, a green light emitting element, and a blue light emitting element;
A first polarizing plate disposed on the front side of the light emitting element group, and a second polarizing plate disposed on the rear side of the light emitting element group,
In the light-emitting device, the cathode and the anode of the light-emitting element are light-transmitting conductive films.

Note that the transmission axis of the polarizing plate, or an absorption axis that forms 90 degrees with respect to the transmission axis (hereinafter, the transmission axis or absorption axis is expressed as an optical axis) is 90 degrees in two transmission axes (or absorption axes). Furthermore, the transmission axes or the absorption axes may have a deviation angle (hereinafter, both deviation angles are expressed as deviation angles of the optical axis), and the deviation angle is ± 45 degrees or less, preferably It is characterized by an allowable range of ± 30 degrees or less, more preferably ± 10 degrees or less, and more preferably ± 5 degrees or less. When such a polarizing plate is used, in a dual emission display device, black display in a non-light emitting state can be clearly performed, and contrast can be increased.

Further, in addition to the polarizing plate, it may be combined with a retardation plate (λ / 4 plate).
A light-emitting device having a plurality of light-emitting elements each having a cathode, a layer containing an organic compound, and an anode,
A light emitting element group including a red light emitting element that emits light in response to an input signal, a green light emitting element, and a blue light emitting element;
A first polarizing plate disposed on the front side of the light emitting element group, a first λ / 4 plate disposed between the light emitting element group and the first polarizing plate,
A second polarizing plate disposed on the rear side of the light emitting element group;
A second λ / 4 plate disposed between the light emitting element group and the second polarizing plate;
In the light-emitting device, the cathode and the anode of the light-emitting element are light-transmitting conductive films.

In the present invention, both the observer on the front side of the panel and the observer on the rear side of the panel can see the display, but in this specification, the transmission axis of the polarizing plate as seen from the observer on either side 0
Corresponding to this, the fast axis or slow axis of the phase difference plate and the angles of the transmission axes of the remaining polarizing plates are determined. Accordingly, the transmission axis of the first polarizing plate is 0 ° as viewed from the viewer on one side, and the first retardation plate, the panel, the second retardation plate, and the second polarizing plate are sequentially determined. To do.

Further, in order to increase the bandwidth of the phase characteristics in the visible light range, it may be combined with a phase difference plate (λ / 2 plate).
A light-emitting device having a plurality of light-emitting elements each having a cathode, a layer containing an organic compound, and an anode,
A light emitting element group including a red light emitting element that emits light in response to an input signal, a green light emitting element, and a blue light emitting element;
A first polarizing plate disposed on the front side of the light emitting element group, a first λ / 4 plate disposed between the light emitting element group and the first polarizing plate,
A first λ / 2 plate disposed between the first polarizing plate and the first λ / 4 plate;
A second polarizing plate disposed on the rear side of the light emitting element group;
A second λ / 4 plate disposed between the light emitting element group and the second polarizing plate;
The second λ / 2 plate disposed between the second polarizing plate and a second λ / 4 plate;
In the light-emitting device, the cathode and the anode of the light-emitting element are light-transmitting conductive films.

In each of the above structures, the light-transmitting conductive film is made of ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or indium tin containing SiOx. It is characterized by being an oxide (ITSO). In each of the above configurations, when the materials of the cathode and the anode are different, the color tone may be made uniform by appropriately adjusting the film thickness. When the materials of the cathode and the anode are the same, the same film thickness is obtained. It is preferable to do.

Further, an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be performed that diffuses reflected light due to surface irregularities and reduces reflection. Also polarizing plates,
Or you may perform the anti-reflection process which heat-processes to a circularly-polarizing plate. Thereafter, in order to protect from external impact, a hard coat treatment may be performed.

In each of the above structures, the light-emitting device is an electronic device that is a portable information terminal, a video camera, a digital camera, or a personal computer. Alternatively, in each of the above-described configurations, the light emitting device is an electronic apparatus characterized in that it is a video / audio bidirectional communication device or a general-purpose remote control device.

Or in each said structure, the said light-emitting device can visually recognize a video display from an inner side and an outer side by providing in a part of wall and a part of door. The light emitting device
By providing it on a part of the wall or part of the door, it is possible to provide a window capable of displaying an image through which the other side can be seen. According to the present invention, a thin and lightweight dual emission display device can be realized.
A dual emission display device can be installed at a place where a window glass can be installed.

Note that the circularly polarizing plate is specifically a retardation plate, retardation film, or retardation film having retardation characteristics of λ / 4, λ / 4 + λ / 2, a polarizing plate, a polarizing film, or linearly polarized light. It refers to a circularly polarizing plate (including an elliptically polarizing plate) made of a combination with a film. Broadband λ here
The / 4 plate gives a constant phase difference (90 degrees) in the visible light range.

Specifically, a circularly polarizing plate is set so that the angle formed by the transmission axis of the polarizing plate and the slow axis of the retardation film is 45 °. In addition, in this specification, a circularly polarizing plate means
A circularly polarizing film is also included.

In a conventional top-emission type panel or bottom-emission type panel, the light that has passed through the polarizing plate incident from the outside becomes linearly polarized light, becomes circularly polarized light by the retardation film, and this circularly polarized light becomes a metal. Reflected by the electrode (cathode or anode) and becomes linearly polarized light by the retardation film, and the angle formed by the linearly polarized light and the transmission axis of the polarizing plate is 90 °, so that the reflected light is absorbed by the polarizing plate.

Further, the shift angle in this specification is defined with reference to FIG. As shown in FIG. 17A, for example, when viewed from the transmission axis of the polarizing plate, a state in which the transmission axis A of the polarizing plate A and the transmission axis B of the polarizing plate B form 90 degrees is referred to as a crossed Nicol state. Note that a state where the absorption axis of the polarizing plate A and the absorption axis of the polarizing plate B form 90 degrees is also a crossed Nicol state.

A state in which the transmission axis A and the transmission axis B are parallel is referred to as a parallel Nicol state. Note that the state where the absorption axis of the polarizing plate A and the absorption axis of the polarizing plate B are parallel is also a parallel Nicol state.

As shown in FIG. 17B, the deviation angle is a deviation of the transmission axis from 90 degrees in the crossed Nicol state. In the parallel Nicol state, the transmission axis A and the transmission axis B are parallel. The deviation of the transmission axis from the state (0 degree). The same applies when the absorption axis is used. Also,
The deviation angle can take a positive value or a negative value depending on the direction of deviation (the rotational direction in which the deviation occurs).

Note that a light-emitting device in this specification refers to an image display device, a light-emitting device, or a light source (including a lighting device). Also, a connector such as an FPC (Flexible pr
inted circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carr)
ier Package), TAB tape, a module with a printed wiring board at the end of TCP, or a light emitting device using a COG (Chip On Glass) method IC (integrated circuit)
It is assumed that all modules directly mounted with are included in the light emitting device.

In the light emitting device of the present invention, the driving method of the screen display is not particularly limited.
A dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. Also,
The video signal input to the source line of the light emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed according to the video signal as appropriate.

Further, in a light emitting device in which a video signal is digital, there are a video signal input to a pixel having a constant voltage (CV) and a constant current (CC). The video signal has a constant voltage (
There are two types of CV): a voltage applied to the light emitting element is constant (CVCV) and a current applied to the light emitting element is constant (CVCC). Also, video signals with constant current (CC)
There are two types, one having a constant voltage applied to the light emitting element (CCCV) and one having a constant current applied to the light emitting element (CCCC).

In the light emitting device of the present invention, a protection circuit (such as a protection diode) for preventing electrostatic breakdown may be provided.

The present invention can be applied regardless of the TFT structure. For example, a top gate TFT, a bottom gate (inverse staggered) TFT, or a forward staggered TFT can be used. Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

Further, the TFT electrically connected to the light emitting element may be a p-channel TFT or an n-channel TFT. When connecting to a p-channel TFT, connect to the anode,
A cathode may be formed after sequentially laminating a hole injection layer / hole transport layer / light emitting layer / electron transport layer on the anode. In the case of connecting to an n-channel TFT, an anode may be formed after sequentially connecting an electron transport layer / light emitting layer / hole transport layer / hole injection layer on the cathode.

As the active layer of the TFT, an amorphous semiconductor film, a semiconductor film including a crystal structure, a compound semiconductor film including an amorphous structure, or the like can be used as appropriate. Further, the active layer of the TFT is a semiconductor having an intermediate structure between an amorphous structure and a crystal structure (including single crystal and polycrystal) and having a third state that is stable in terms of free energy, and has a short distance. A semi-amorphous semiconductor film (also referred to as a microcrystalline semiconductor film or a microcrystal semiconductor film) including a crystalline region having order and lattice strain can be used.

The semi-amorphous semiconductor film includes crystal grains of 0.5 to 20 nm in at least a part of the film, and the Raman spectrum is shifted to a lower wave number side than 520 cm ⁻¹ . The semi-amorphous semiconductor film is derived from the Si crystal lattice in X-ray diffraction (
111) and (220) diffraction peaks are observed. Semi-amorphous semiconductor films are
At least 1 atomic% or more of hydrogen or halogen is contained as a neutralizing agent for dangling bonds. As a method for manufacturing a semi-amorphous semiconductor film, a silicide gas is formed by glow discharge decomposition (plasma CVD). As silicide gas, SiH ₄
In addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. This silicide gas may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is in the range of approximately 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less, preferably 100 to 250 ° C. As impurity elements in the film, it is desirable that impurities of atmospheric components such as oxygen, nitrogen, and carbon be 1 × 10 ²⁰ cm ⁻¹ or less, and in particular, the oxygen concentration is 5 × 10 ¹⁹ / c.
m ³ or less, preferably 1 × 10 ¹⁹ / cm ³ or less. The field effect mobility μ of a TFT using a semi-amorphous semiconductor film as an active layer is 5 to 50 cm ² / Vsec.

In the present invention, light emission from one light-emitting element can be recognized from a side where a semiconductor element is provided and a side opposite thereto. Therefore, the thickness of the electronic device equipped with the dual emission display device can be reduced, and weight reduction can be achieved.

And this invention makes it a subject that the black display in a dual emission type display apparatus is difficult, and can use a polarizing plate or a circularly-polarizing plate, can perform a beautiful black display, and can raise contrast.

In addition, according to the present invention, in a dual emission display device, it is possible to obtain a full color display in which the color tone of display on both sides is the same.

  Embodiments of the present invention will be described below.

(Embodiment 1)
Here, a method for manufacturing a dual emission display device is described with reference to FIGS.

First, a base insulating film is formed over the substrate 400. In order to extract light emission using the substrate side as one display surface, a light-transmitting glass substrate or quartz substrate may be used as the substrate 400. Alternatively, a light-transmitting plastic substrate having heat resistance that can withstand the processing temperature may be used. Here, a glass substrate is used as the substrate 400. The refractive index of the glass substrate is 1.5.
Around 5.

As the base insulating film, a base film made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed. Again, the base insulating film is a light-transmitting film. Here, an example in which a two-layer structure is used as the base film is shown; however, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. Note that the base insulating film is not necessarily formed.

Next, a semiconductor layer is formed over the base insulating film. The semiconductor layer is formed by forming a semiconductor film having an amorphous structure by a known means (sputtering method, LPCVD method, plasma CVD method, etc.), and then known crystallization treatment (laser crystallization method, thermal crystallization method). Or a crystalline semiconductor film obtained by performing a thermal crystallization method using a catalyst such as nickel) is formed by patterning into a desired shape using a first photomask. The semiconductor layer is formed with a thickness of 25 to 80 nm (preferably 30 to 70 nm). There is no limitation on the material of the crystalline semiconductor film, but the crystalline semiconductor film is preferably formed of silicon or a silicon germanium (SiGe) alloy.

In addition, a continuous wave laser may be used as a crystallization process for a semiconductor film having an amorphous structure. In order to obtain a crystal with a large grain size when crystallizing an amorphous semiconductor film, continuous oscillation is possible. It is preferable to use a solid-state laser and apply the second to fourth harmonics of the fundamental wave. Typically, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) may be applied. 10W output when using a continuous wave laser
The laser light emitted from the continuous wave YVO ₄ laser is converted into a harmonic by a non-linear optical element. There is also a method of emitting harmonics by putting a YVO ₄ crystal and a nonlinear optical element in a resonator. Then, it is preferably formed into a rectangular or elliptical laser beam on the irradiation surface by an optical system, and irradiated to the object to be processed. The energy density at this time is 0.01-100 MW
/ Cm ² (preferably 0.1 to 10 MW / cm ² ) is required. And 10-20
Irradiation may be performed by moving the semiconductor film relative to the laser light at a speed of about 00 cm / s.

Next, after removing the resist mask, a gate insulating film is formed to cover the semiconductor layer. The gate insulating film is formed by plasma CVD, sputtering, or thermal oxidation, and has a thickness of 1 to 200 n.
m. As the gate insulating film, a film formed of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed. Here again, the gate insulating film is a light-transmitting film. When the plasma CVD method is used for a thin gate insulating film, it is necessary to slow down the film formation rate and obtain a thin film with good controllability. For example, RF power is 100W, 10kHz,
If the pressure is 0.3 Torr, the N ₂ O gas flow rate is 400 sccm, and the SiH ₄ gas flow rate is 1 sccm, the deposition rate of the silicon oxide film can be 6 nm / min.

Next, a conductive film with a thickness of 100 to 600 nm is formed over the gate insulating film. Here, a conductive film formed by stacking a TaN film and a W film is formed by sputtering. Here, the conductive film is a stack of a TaN film and a W film, but is not particularly limited, Ta, W, Ti, Mo, Al
Alternatively, an element selected from Cu, a single layer of an alloy material or a compound material containing the element as a main component, or a stacked layer thereof may be used. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used.

Next, a resist mask is formed using a second photomask, and etching is performed using a dry etching method or a wet etching method. Through this etching process, the conductive film is etched to form gate electrodes of the TFTs 402R, 402G, and 402B.

Next, after removing the resist mask, a resist mask is newly formed using a third photomask. In order to form an n-channel TFT (not shown) here, an impurity element imparting n-type conductivity (typical) First for doping lightly with phosphorus or As)
The doping process is performed. The resist mask covers a region to be a p-channel TFT and the vicinity of the conductive layer. Through-doping is performed through the insulating film in the first doping step, and a low concentration impurity region is formed. One light emitting element is driven by using a plurality of TFTs, but the above doping step is not particularly necessary when driven by only a p-channel TFT.

Next, after removing the resist mask, a resist mask is newly formed by using a fourth photomask, and a semiconductor film is doped with an impurity element (typically boron) imparting p-type conductivity to the semiconductor at a high concentration. Step 2 is performed. Through-doping is performed through the gate insulating film in the second doping step, and a p-type high concentration impurity region is formed.

Next, a resist mask is newly formed using a fifth photomask, and an impurity element imparting n-type conductivity to the semiconductor (typically phosphorus or As) is formed in order to form an n-channel TFT (not shown) here. A third doping step is performed to dope the silicon at a high concentration. The resist mask covers a region to be a p-channel TFT and the vicinity of the conductive layer. Through-doping is performed through the gate insulating film in the third doping step to form an n-type high concentration impurity region.

After that, after removing the resist mask and forming an insulating film containing hydrogen, the impurity element added to the semiconductor layer is activated and hydrogenated. As the insulating film containing hydrogen, a silicon nitride oxide film (SiNO film) obtained by a PCVD method is used. In addition, when the semiconductor film is crystallized using a metal element that promotes crystallization, typically nickel, gettering that reduces nickel in the channel formation region at the same time as activation can be performed. . Note that the insulating film containing hydrogen is the first layer of the interlayer insulating film and is a light-transmitting insulating film containing silicon oxide.

Next, a planarizing film that is the second layer of the interlayer insulating film is formed. As a planarizing film, a light-transmitting inorganic material (silicon oxide, silicon nitride, silicon oxynitride, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene) ) Or a laminate of these. Other light-transmitting films used for the planarizing film include insulating films made of SiOx films containing alkyl groups obtained by a coating method, such as silica glass, alkylsiloxane polymers, alkylsilsesquioxane polymers, hydrogen An insulating film formed using a silsesquioxane hydride polymer, a hydrogenated alkyl silsesquioxane polymer, or the like can be used. Examples of siloxane-based polymers include PSB-K1 and PSB-K31, which are Toray-made coating insulating film materials, and ZRS-5PH, which is a catalytic chemical-made coating insulating film material.

Next, a third interlayer insulating film having a light-transmitting property is formed. The third interlayer insulating film is provided as an etching stopper film for protecting the planarizing film which is the second interlayer insulating film when the transparent electrode 403 is patterned in a later step. However, when the transparent electrode 403 is patterned, if the second interlayer insulating film becomes an etching stopper film, 3
The interlayer insulating film of the layer is unnecessary.

Next, contact holes are formed in the interlayer insulating film using a sixth mask. Then
After removing the sixth mask and forming a conductive film (TiN / Al / TiN), etching (dry etching with a mixed gas of BCl ₃ and Cl ₂ ) is performed using the eighth mask, and wiring ( TFT source wiring and drain wiring, current supply wiring, etc.) are formed. Ti
N is one of materials that have good adhesion to the high heat resistant planarizing film. In addition, the N content of TiN is preferably less than 44% in order to make contact with the source region or drain region of the TFT.

Next, the transparent electrode 403, that is, the anode of the organic light emitting element is formed with a film thickness of 10 using the seventh mask.
It forms in the range of nm-800 nm. As the transparent electrode 403, indium tin oxide (I
In addition to TO, for example, IZO (Indium Zinc Oxi) in which indium tin oxide containing Si element (ITSO) or indium oxide is mixed with 2 to 20% zinc oxide (ZnO).
A transparent conductive material having a high work function (de) (work function of 4.0 eV or more) can be used.

Next, an insulator (referred to as a bank, a partition, a barrier, a bank, or the like) is formed to cover the end portion of the transparent electrode 403 using an eighth mask. Examples of the insulator include a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene) obtained by a coating method, or an SOG film (for example, SiOx containing an alkyl group).
Film) is used in a film thickness range of 0.8 μm to 1 μm.

Next, layers 404, 405R, 405G, 405B, and 406 containing an organic compound are formed by an evaporation method or a coating method. Note that in order to improve the reliability of the light-emitting element, it is preferable to perform deaeration by performing vacuum heating before the formation of the layer 404 containing an organic compound. For example, before vapor deposition of the organic compound material, it is desirable to perform a heat treatment at 200 ° C. to 300 ° C. in a reduced pressure atmosphere or an inert atmosphere in order to remove gas contained in the substrate. In the case where the interlayer insulating film and the partition walls are formed of SiOx films having high heat resistance, an even higher heat treatment (410 ° C.
) Can also be added.

Next, a molybdenum oxide (MoOx) is selectively formed on the transparent electrode 403 using a vapor deposition mask.
) And 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (
α-NPD) and rubrene are co-evaporated to contain a first organic compound 404 (first layer)
Form.

In addition to MoOx, copper phthalocyanine (CuPC) and vanadium oxide (VOx)
A material having a high hole-injecting property such as ruthenium oxide (RuOx) or tungsten oxide (WOx) can be used. In addition, a layer containing a first organic compound formed by applying a high hole-injection polymer material such as poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) by a coating method It may be used as 404.

Next, α-NPD is selectively deposited using a deposition mask to form a hole transport layer (second layer) on the layer 404 containing the first organic compound. In addition to α-NPD, 4,4′-bis [N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD)
), 4,4 ′, 4 ″ -tris (N, N-diphenyl-amino) -triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) A material having a high hole-transport property represented by an aromatic amine compound such as —N-phenyl-amino] -triphenylamine (abbreviation: MTDATA) can be used.

Next, light emitting layers 405R, 405G, and 405B (third layer) are selectively formed. In order to obtain a full-color display device, the deposition mask is aligned for each emission color (R, G, B), and each is selectively deposited.

For the light-emitting layer 405R that emits red light, a material such as Alq ₃ : DCM or Alq ₃ : rubrene: BisDCJTM is used. For the light-emitting layer 405G that emits green light, a material such as Alq ₃ : DMQD (N, N′-dimethylquinacridone) or Alq ₃ : coumarin 6 is used. In addition, as the light emitting layer 405B that emits blue light, α-N
Materials such as PD or tBu-DNA are used.

Next, Alq ₃ (tris (8-quinolinolato) aluminum) is selectively deposited using a deposition mask, and an electron transport layer (fourth layer) is formed over the light emitting layers 405R, 405G, and 405B. In addition to Alq ₃ , tris (5-methyl-8-quinolinolato) aluminum (
Abbreviations: Almq ₃ ), bis (10-hydroxybenzo [h] -quinolinato) beryllium (
Abbreviations: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), and other electron-transport properties represented by metal complexes having a quinoline skeleton or a benzoquinoline skeleton High materials can be used. In addition, bis [2- (2-hydroxyphenyl) -benzoxazolate] zinc (abbreviation: Zn (BOX))
₂ ), bis [2- (2-hydroxyphenyl) -benzothiazolate] zinc (abbreviation: Zn (
A metal complex having an oxazole-based or thiazole-based ligand such as BTZ) ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-te
rt-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD) and 1,3-
Bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl -5- (4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (
4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2,4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin ( (Abbreviation: BCP) and the like can also be used as an electron transport layer because of their high electron transport properties.

Next, 4,4-bis (5-methylbenzoxazol-2-yl) stilbene (abbreviation:
BzOs) and lithium (Li) are co-evaporated to form an electron injection layer (fifth layer) 406 over the entire surface covering the electron transport layer and the insulator. By using the benzoxazole derivative (BzOS), damage due to the sputtering method at the time of forming the transparent electrode 407 performed in a later process is suppressed. In addition to BzOs: Li, CaF ₂ , lithium fluoride (LiF),
A material having a high electron-injecting property such as an alkali metal or alkaline earth metal compound such as cesium fluoride (CsF) can be used. In addition, Alq ₃ and magnesium (M
What mixed g) can also be used.

Next, a transparent electrode 407, that is, a cathode of an organic light emitting element is formed on the fifth layer 406 with a film thickness of 10
It forms in the range of nm-800 nm. As the transparent electrode 407, indium tin oxide (I
In addition to TO, for example, IZO (Indium Zinc Oxi) in which indium tin oxide containing Si element (ITSO) or indium oxide is mixed with 2 to 20% zinc oxide (ZnO).
de) can be used.

As described above, a light emitting element is manufactured. The materials for the anode, the layer containing the organic compound (first to fifth layers), and the cathode constituting the light-emitting element are appropriately selected, and the thicknesses of the materials are also adjusted.
It is desirable that the same material is used for the anode and the cathode, and the film thickness is approximately the same, preferably approximately 100 nm.

Also, if necessary, a transparent protective layer (not shown) that covers the light emitting element and prevents moisture from entering.
Form. As the transparent protective layer, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by sputtering or CVD, and carbon are used. A thin film (eg, a DLC film or a CN film) having a main component can be used.

Next, the second substrate 408 and the substrate 400 are attached to each other by using a sealing material containing a gap material for securing the gap between the substrates. The second substrate 408 may also be a light transmissive glass substrate or a quartz substrate. In addition, a desiccant may be arranged as a space (inert gas) between the pair of substrates, or a transparent sealing material (such as an ultraviolet curing or thermosetting epoxy resin).
May be filled between a pair of substrates.

In the light-emitting element, the transparent electrodes 403 and 407 are formed of a light-transmitting material, and light can be taken from one light-emitting element in two directions, that is, on both sides, as indicated by white arrows in FIG.

With the panel configuration described above, the color coordinates can be made substantially the same for the light emission from the upper surface and the light emission from the lower surface as shown in FIG.

Finally, optical films (polarizing plates or circularly polarizing plates) 401 and 409 are provided to improve contrast.

For example, an optical film on the substrate 400 (a λ / 4 plate and a polarizing plate are arranged in order from the substrate)
401 is provided, and an optical film (a λ / 4 plate and a polarizing plate are arranged in the order close to the substrate) 409 is provided on the second substrate 408. This structure is shown in FIG. 3A or 3B. FIG. 3 (A)
Alternatively, in FIG. 3B, a panel refers to a light-emitting device in which a light-emitting element is provided between the substrate 400 and the second substrate 408.

As another example, an optical film (a λ / 4 plate and a λ /
Two plates and a polarizing plate are arranged 401, and an optical film (a λ / 4 plate, a λ / 2 plate, and a polarizing plate is arranged in the order close to the substrate) 409 is provided on the second substrate 408. This structure is shown in FIG. Also in FIG. 4, the panel refers to a light emitting device in which a light emitting element is provided between the substrate 400 and the second substrate 408.

(Experiment 1)
Here, a metal halide lamp (manufactured by Sigma Kogyo Co., Ltd.) IMH-250 was used as a light source, and the transmittance was evaluated by a combination of polarizing plates. The reference for this experiment is air.

The arrangement conditions of the polarizing plate are as follows. The arrangement condition is the order from the light source.
Condition 1: Polarizer A + Polarizer B

Here, the angle dependency of polarizing plates A and B arranged as in Condition 1 was measured. The results are shown below.

In Table 1, in the measurement system shown in FIG. 5, only the polarizing plates A and B are arranged in crossed Nicols shifted by 90 degrees, this is set to a shift angle of 0 degrees, and the optical axis angle of the polarizing plate A is shifted therefrom. The results of the transmitted light and the deviation angle are shown. In addition, the brightness is parallel Nicol state (shift angle 90 degrees, -90 degrees)
Is normalized as 1. The optical axis of the polarizing plate is the transmission axis.

    Moreover, the graph based on Table 1 is shown in FIG.

From the above results, the misalignment angle of the polarizing plates A and B is ± 45 degrees or less at which the luminance decreases by about 50%,
Preferably, the allowable range is ± 30 degrees or less where the luminance is reduced by about 30%, more preferably ± 10 degrees or less, more preferably ± 5 degrees or less where the luminance is reduced by about 9.9%.

(Experiment 2)
Here, an experiment was performed in which reflected light was measured using a polarizing plate or various circularly polarizing plates using a metal halide lamp (manufactured by Sigma Kogyo) IMH-250 as a light source.

First, a sample prepared under the following conditions was prepared. The values in parentheses indicate the angle of the slow axis of the wave plate when the transmission axis of the polarizing plate is 0 degree.
Condition 1: glass substrate + metal film condition 2: glass substrate + metal film + polarizing plate condition 3: glass substrate + metal film + λ / 4 plate (45 degrees) + polarizing plate condition 4: glass substrate + metal film + λ / 4 plate (80 degree) + λ / 2 plate (17.5 degree) + polarizing plate condition 5: glass substrate + metal film + λ / 4 plate (45 degree) + λ / 2 plate (45 degree) + polarizing plate condition 6: glass substrate + Metal film + λ / 2 plate (45 °) + polarizing plate The reference for this experiment was air, and an Al—Ti film of 100 nm was formed as the metal film by sputtering.

FIG. 7 shows a measurement system for the sample (condition 3). A light source 61 is incident on the sample so that θ = 30 degrees, and a reflected light measuring device BM5A (light receiving device) 62 is arranged perpendicular to the sample, and the luminance (cd / m ² ) of the reflected light is measured. did.

    Table 2 shows the experimental results of the samples (Condition 1 to Condition 6).

As can be seen from Table 2, the samples (Condition 3, Condition 4, Condition 5) have a high effect of preventing reflected light.

Moreover, with respect to the sample (Condition 1 to Condition 6), reflected light was measured in the range of 400 to 800 nm with a self-recording spectrophotometer U4000 (manufactured by Hitachi, Ltd.). The result is shown in FIG.

As can be seen from FIG. 8, samples with low reflectivity were obtained (condition 3, condition 4, condition 5).
It is. In particular, samples (Condition 3 and Condition 4) are preferable because low reflectance can be obtained in a wide range. Further, when compared with Table 2, it can be seen that when a polarizing plate or a wavelength plate is provided, reflected light can be considerably prevented.

(Embodiment 1)
In this embodiment mode, a case where an optical film, typically a polarizing plate, or a circular polarizing plate is provided in a dual emission display device will be described.

FIG. 9A shows an overall view of a dual emission display device. Panel 10 of a dual emission display device
0, the first polarizing plate 101 is disposed, and the second polarizing plate 102 has an optical axis of 90 with respect to the first polarizing plate.
It is arranged in a crossed Nicol state that makes a degree.

At this time, the optical axis of the polarizing plate may have a deviation angle from the crossed Nicols state, and the deviation angle is ± 4.
It is 5 degrees or less, preferably ± 30 degrees or less, more preferably ± 10 degrees or less, and further preferably ± 5 degrees or less. From Experiment 1, when the deviation angle from the crossed Nicol state is ± 45 degrees or less, 50% of transmitted light is cut as compared with the transmitted light in the parallel Nicol state. When the deviation angle is ± 10 degrees or less, 90% or more of the transmitted light is cut. When the deviation angle is ± 5 degrees or less, the transmitted light cuts 9.9% or more of the transmitted light. It is.

The panel 100 is provided with a display portion 103 provided with light-emitting elements and semiconductor elements, and a drive circuit portion 104. The drive circuit portion 104 includes a flexible printed circuit board (FPC),
The external circuit 105 is connected via an anisotropic conductive film (ACF) or the like. External circuit 10
5 has a power supply circuit, a controller, and the like. Such a dual emission display is shown in FIG.
As shown in (B), both sides of the panel provided with the light-emitting elements (the first display surface and the second display surface).
).

In the present invention, the emission color of the light emitting element may be a mono color or a full color of R, G, and B coating. For example, when a white light emitting material is used, a color filter or a color filter and a color conversion layer can be used, and when a blue light emitting material is used, full color display or area color display can be performed using a color conversion layer.

FIG. 9C shows an enlarged view of a panel cross section. Note that the driving transistor of this embodiment is described using an example in which a thin film transistor (TFT) having a polycrystalline silicon film is used.
A thin film transistor having an amorphous silicon film, a thin film transistor having a semi-amorphous semiconductor film (also referred to as a microcrystalline semiconductor film or a microcrystal semiconductor film), or a MOS transistor having a single crystal may be used.

Further, the polarity of the driving TFT will be described in the case of the p-channel type.

As shown in FIG. 9C, the driving TFT 110 provided on the insulating surface has impurity regions to be a source region and a drain region formed by adding an impurity element such as boron to a semiconductor film. The semiconductor film is subjected to laser irradiation, heating, and crystallization using a metal element such as Ni. A gate electrode is provided on the channel formation region of the semiconductor film via a gate insulating film. Scan lines (not shown) are provided in the same layout as the gate electrodes.
A first insulating film is provided so as to cover the gate electrode, and a contact hole is opened in the first insulating film over the impurity region. Wirings formed in the contact holes function as source wirings and drain wirings, and signal lines (not shown) are provided with the same layout. A first electrode 111 is provided so as to be electrically connected to the drain electrode. Then, a second insulating film is provided so as to cover the first electrode 111, and an opening is formed on the first electrode. A layer having an organic compound (hereinafter referred to as an organic compound layer (EL layer)) 112 is provided in the opening, and a second electrode 113 is provided so as to cover the organic compound layer and the second insulating film. .

The organic compound layer 112 is laminated in order of HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), and EIL (electron injection layer) in this order from the anode side. . Typically, CuPc as HIL, α-NPD as HTL, B as ETL
BCP: Li is used as CP and EIL, respectively.

In the case where the organic compound layer 112 is a full color display, red (R), green (
A material that emits light of G) and blue (B) may be selectively formed as appropriate by an evaporation method using an evaporation mask, an inkjet method, or the like. Of the organic compound layers of each color,
Common CuPc and α-NPD can be formed on the entire surface of the pixel portion. The mask can also be used in common for each color. For example, after forming a red organic compound layer, the mask is shifted to form a green organic compound layer, and the mask is shifted again to form a blue organic compound layer. be able to. What is necessary is just to set the order of the organic compound layer of each color to form suitably.

In the case of white light emission, full color display may be performed by separately providing a color filter or a color filter and a color conversion layer. The color filter and the color conversion layer may be attached after being provided on the second substrate. In addition, a color filter and a color conversion layer for white light emitted downward can be formed through an insulating film after forming a drain wiring (or source wiring). In addition, a dual emission display device in which one display surface is full color and the other surface is monochromatic is also possible.

Then, a passivation film 114 containing nitrogen is formed by a sputtering method or a CVD method to prevent moisture and oxygen from entering. In the space formed at this time, nitrogen may be sealed and a desiccant may be further disposed. Further, the side surface of the display portion may be covered with the first electrode, the second electrode, and other electrodes. After that, the sealing substrate is attached, and a first polarizing plate 115a and a second polarizing plate 115b are provided for the substrate and the sealing substrate, respectively.

In the dual emission display device of the present invention formed as described above, the first electrode 111 and the second electrode 113 have translucency. As a result, the first display surface from which the light from the light emitting layer is emitted to the first electrode 111 with respect to the organic compound layer 112 and the second display surface to be emitted to the second electrode 113 are formed. That is, light emission from the light emitting element is emitted to the substrate side where the driving TFT is formed and to the sealing substrate side facing the substrate side (see arrows indicating the light emission direction).

Then, by arranging the first and second polarizing plates so as to be in a crossed Nicols state on the dual emission type display device, except for the portion that emits light and performs display, the display becomes black and viewed from either side. Even the background does not show through. That is, in the dual emission display device according to the present invention, a clear black display can be performed by using the polarizing plate, and the contrast is improved.

In addition, as illustrated in FIG. 9D, a circularly polarizing plate may be used in a dual emission display device. The optical axis of the circularly polarizing plate has a slow axis and a fast axis, but in this embodiment, the slow axis is used.
The optical axis of the polarizing plate will be described using the transmission axis. For example, the first polarizing plate 115a and the first wave plate 116a are overlapped, and the second polarizing plate 115b and the second wave plate 116b are overlapped to be provided as first and second circular polarizing plates, respectively. The first and second wave plates may be a combination of λ / 4 plates, a combination of λ / 2 plates, or a combination of wave plates obtained by laminating them.

In particular, the transmission axis (first transmission axis) of the first polarizing plate, the slow axis (first slow axis) of the first λ / 4 plate, and the transmission axis (second phase) of the second polarizing plate. The transmission axis) and the slow axis (second slow axis) of the second λ / 4 plate form 45 degrees, and the first and second transmission axes are parallel to each other, that is, in a parallel Nicol state. The first and second slow axes are parallel to each other (see FIG. 3A).

Further, the first and second transmission axes may be arranged perpendicular to each other, that is, in a crossed Nicols state, and the first and second slow axes may be arranged perpendicular to each other. That is, the first relative to the first transmission axis
The slow axis is 45 degrees, the slow axis of the second λ / 4 plate is 90 degrees from the first slow axis, and the transmission axis of the polarizing plate is in a crossed Nicols state. At this time, the first slow axis and the second
The slow axis is 90 degrees, and the second slow axis is 135 degrees with respect to the second transmission axis (see FIG. 3B). In the case of these configurations, a polarizing plate, a λ / 4 plate, a panel (light emitting element),
A λ / 4 plate and a polarizing plate are provided in this order.

In addition, the transmission axes (first and second transmission axes) of the first and second polarizing plates, and the first and second λ /
The slow axes (first and second λ / 2 slow axes) of the two plates form 17.5 degrees, respectively, and the first and second transmission axes and the first and second λ / 4 Slow axis of the plate (first and second λ / 2 slow axes)
And the first and second transmission axes are parallel to each other, that is, in a parallel Nicol state, and the slow axes of the first and second λ / 2 plates, and the first and second The slow axes of the λ / 4 plates are made parallel (see FIG. 4). As in FIG. 3B, the first λ / 4
The slow axis of the plate and the slow axis of the second λ / 4 plate may form 90 degrees. In these structures, a polarizing plate, a λ / 2 plate, a λ / 4 plate, a panel (light emitting element), a λ / 4 plate, a λ / 2 plate, and a polarizing plate are provided in this order.

In Experiment 2 described above, it can be seen that the circularly polarizing plate has a higher effect of preventing reflected light than the polarizing plate. Therefore, when reflection from the electrodes of the light emitting element and the wiring, that is, reflection of external light becomes a problem, a circularly polarizing plate may be provided as described above.

As described above, the present invention can be provided with a polarizing plate, a circularly polarizing plate, or a combination thereof depending on the structure of the dual emission display device. As a result, a clear black display can be performed and the contrast is improved. Furthermore, reflection light can be prevented by providing a circularly polarizing plate.

(Embodiment 2)
In this embodiment mode, a structure of a dual emission display device different from that in FIG. 9 and including a circularly polarizing plate or a polarizing plate will be described.

In the dual emission display device different from that in FIG. 9C, the light emission direction is second in the first region.
From the first electrode side in the second region. Therefore, a plurality of light-emitting elements and a plurality of driving TFTs are included in one pixel, and the first electrode electrically connected to the first light-emitting element has a non-light-transmitting property and is opposed to the second electrode. The electrode has translucency. The first electrode electrically connected to the second light-emitting element has a light-transmitting property, and the second electrode facing the first electrode has a light-transmitting property. In order to have non-light-transmitting properties, a film including a metal or a colored resin may be formed over the light-transmitting electrode.

In this case, since a non-translucent material is provided, black display can be performed cleanly. However, when a highly reflective metal material is used for the non-translucent electrode, reflection of external light becomes a problem. Therefore, it is preferable to provide a circularly polarizing plate instead of a polarizing plate. As the wave plate included in the circularly polarizing plate, a λ / 4 plate, a λ / 2 plate, or a laminate of them can be used. In the circularly polarizing plates provided on the first region side and the second region side, the wave plates may be different.

FIG. 10A shows an enlarged view of a cross section of the panel, and the first region includes a first driving TF.
T201, a first electrode 20 connected to the first driving TFT 201 and having a non-translucent material
3 and the second region includes a second driving TFT 202 and a second electrode 204 which is connected to the second driving TFT 202 and has a light-transmitting material.

An organic compound layer 205 including a light emitting layer is provided over the first electrode 203 and the second electrode 204, a third electrode 206 is provided over the light emitting layer, and the third electrode 20 is provided in the second region.
A film 207 having a non-translucent material is provided on 6. Nontranslucent first electrode 2
03 and the film 207 provided over the second electrode 204 are made of a metal material such as aluminum or titanium, and the light-transmitting second electrode 204 or the third electrode 206 is made of a material such as ITO. be able to. In particular, the second electrode 204 connected to the semiconductor film includes a first metal layer containing titanium, a second metal layer containing titanium nitride or tungsten nitride, a third metal layer containing aluminum, and titanium nitride. It is preferable to use a stacked layer of a fourth metal layer containing

Then, a passivation film 207 containing nitrogen is formed by a sputtering method or a CVD method to prevent moisture and oxygen from entering. In the space formed at this time, nitrogen may be sealed and a desiccant may be further disposed. Further, the side surface of the display portion may be covered with the first electrode, the second electrode, and other electrodes. Thereafter, the sealing substrate is bonded, the first polarizing plate 208a and the first wave plate 209a are overlapped, the second polarizing plate 208b and the second wave plate 209b are overlapped, and the first and second circles, respectively. Provided as a polarizing plate.

As the first and second wave plates, any of a combination of λ / 4 plates, a combination of λ / 2 plates, or a combination of wave plates obtained by laminating them may be used. The axis of the retardation plate of the circularly polarizing plate has a slow axis and a fast axis. In this embodiment, the slow axis is used, and the optical axis of the polarizing plate is explained using the transmission axis.

For example, if λ / 4 plates are used for the first and second wave plates, respectively, the transmission axes (first and second transmission axes) of the first and second polarizing plates, and the first and second λ / 4 plate slow axis (first and second slow axes) are arranged at 45 degrees, respectively, the first circular polarizer and the second circularly polarized light that the first circular polarizer has The second polarizing plate included in the plate is in a parallel Nicol state, that is, the transmission axis of the first polarizing plate and the transmission axis of the second polarizing plate are parallel (0 degree), and the first and second retardations are It is good to arrange so that phase axes may become parallel. In this embodiment mode, FIG. 3A and FIG.
) May be combined, and the detailed configuration is shown in FIGS. 3A and 3B.
). In the present embodiment, the configuration of the circularly polarizing plate using the λ / 4 plate and the λ / 2 plate for the first and second wavelength plates shown in FIG. 4 may be combined.

Furthermore, as another combination, a λ / 4 plate is used as the wavelength plate of the first circularly polarizing plate, and the second
A λ / 2 plate and a λ / 4 plate can be used as a wave plate of the circularly polarizing plate. First λ /
The slow axis of the two plates forms 17.5 degrees with the transmission axis (first transmission axis) of the first polarizing plate, and the first λ /
The slow axes of the four plates are preferably arranged so as to form 2 × (17.5) + 45 = 80 degrees with the transmission axis of the first polarizing plate. At this time, the second circularly polarizing plate is also preferably arranged so that the slow axis of the second λ / 4 plate forms 80 degrees with the transmission axis (second transmission axis) of the second polarizing plate. And it is good to arrange | position so that the transmission axis of the 1st polarizing plate which a 1st circularly-polarizing plate has, and the absorption axis of the 2nd polarizing plate which a 2nd circularly-polarizing plate has may make 0 degree | times.

The optical axis of the polarizing plate may have a deviation angle, and the deviation angle is ± 45 degrees or less, preferably ±
30 degrees or less, more preferably ± 10 degrees or less, and further preferably ± 5 degrees or less.

A current flows between the first electrode 203 or the second electrode 204 and the third electrode 206, and light is emitted from the organic compound layer 205. At this time, since the first electrode 203 including a metal material reflects light and the second electrode 206 transmits light, light is emitted in the direction of the third electrode in the first region, and the second region Then, light is emitted in the direction of the second electrode.

In this embodiment mode, a case where a plurality of driving TFTs are provided has been described. However, the driving TFTs can be shared by the first light-emitting element and the second light-emitting element by a driving method and wiring. In this embodiment, the organic compound layer described in Embodiment 1 can be used.

In FIG. 10B, a polarizing plate is arranged instead of the circular polarizing plate, and the polarizing plate 208a and the polarizing plate 2 are arranged.
The structure which provides 08b is shown. An area of the third electrode having non-translucency in the second region;
The area and size of the non-translucent first electrode in the region, the display in the first region, the second
A polarizing plate may be provided in consideration of the purpose of display in this area.

FIG. 11 shows a circuit configuration of one pixel shown in FIG. The pixel circuit is described so that an organic compound layer (described as a light-emitting element in the circuit) 205 is disposed in one pixel, but the light-emitting layer includes a first region and a second region as is apparent from the cross-sectional view. Can be shared in the area.

A pixel circuit illustrated in FIG. 11A includes a first signal line 301a and a second signal line 301b.
Switching TFTs 304 and 30 connected to the scanning line 303.
5 Current supply lines 302a and 302b are respectively connected to the switching TFTs 304 and 305 via capacitive elements 306a and 306b. Capacitive element 306a,
Reference numeral 306b has a function of holding the gate-source voltage of the driving TFTs 201 and 202, respectively. However, the capacitor elements 306a and 306b are not necessarily provided when the gate capacitances of the driving TFTs 201 and 202 can be substituted. Driving TFT 201, 2
02 are each connected to the light emitting element 205 through the first electrode.

In such a pixel circuit, by arranging the current supply lines, when the display is performed only in the first region, the second region can be turned off. A first region and a second region
Different display can be performed in each area.

For example, when performing different display, when the scanning line 303 is selected, the first signal line 30 is selected.
Video signals for the respective displays are input from 1a and the second signal line 301b. When a predetermined charge is held in the capacitor elements 306a and 306b and the driving TFTs 201 and 202 are turned on, a current is supplied to the light emitting element to emit light.

When one region, for example, the first region is to be turned off, a voltage at which the voltage input from the signal line is relatively zero is set to the current supply line 3 so that no charge is accumulated in the capacitor 306a.
You may input into 02a.

In FIG. 11A, the switching TFTs 304 and 305 share the scanning line 303,
A circuit diagram in which the signal lines 301a and 301b are connected to each other is shown, but the signal lines can be shared by arranging the scanning lines in the respective switching TFTs.

The current supply line can be shared, and in this case, the first area and the second area display the same.

An erasing TFT may be provided at both ends of the capacitor elements 306a and 306b to form a pixel circuit that performs time gradation display.

Next, the pixel circuit illustrated in FIG. 11B includes current control TFTs 308 and 309 that control supply of current to the light-emitting element 205 in addition to the driving TFTs 307 and 310.

The driving TFTs 307 and 310 and the current control TFTs 308 and 309 have the same polarity. The driving TFTs 307 and 310 include depletion type TFTs and driving TFTs 307 and 310.
The other TFTs are normal enhancement type TFTs. Further, a driving TFT 307,
310 is operated in the saturation region, and the current control TFTs 308 and 309 are operated in the linear region. Further, L (gate length) of the driving TFTs 307 and 310 is longer than W (gate width), and the current control TF is set.
L in T308 and 309 may be the same as or shorter than W. More preferably, the driving T
The ratio of L to W of FTs 307 and 310 is preferably 5 or more.

Next, a method for driving the pixel illustrated in FIG. 11B is described. The operation of the pixel illustrated in FIG. 11B can be described by being divided into a writing period and a holding period. First, when the scanning line 303b is selected in the writing period, the switching TFTs 304 and 305 to which the gates are connected are turned on. Then, the video signals input to the signal lines 301a and 301b are converted into current control TFTs 308 through switching TFTs 304 and 305, respectively.
309 is input to the gate. Note that the driving TFTs 307 and 310 are always on because the gates are connected to the current supply lines 302a and 302b.

When the current control TFTs 308 and 309 are turned on by the video signal, a current flows to the light emitting element 205 through the current supply lines 302a and 302b. At this time, TF for current control
Since T308 and 309 operate in the linear region, the current flowing through the light emitting element 205 is determined by the voltage-current characteristics of the driving TFTs 307 and 310 operating in the saturation region and the light emitting element 205. Then, the light emitting element 205 emits light with a luminance with a height corresponding to the supplied current.

When the current control TFTs 308 and 309 are turned off by the video signal, no current is supplied to the light emitting element 205 and no light is emitted. In the present invention, the driving TFT
Even if 307 and 310 are depletion type, since the current control TFTs 308 and 309 are enhancement type, it can be controlled so that no current is supplied to the light emitting element 205.

In the holding period, the switching TFT 304 is controlled by controlling the potential of the scanning line 303b.
, 305, and the potential of the video signal written in the writing period is held. When the current control TFTs 308 and 309 are turned on in the writing period, the potential of the video signal is held by the capacitor elements 306a and 306b, so that supply of current to the light emitting element 205 is maintained. On the contrary, the current control TFTs 308 and 309 in the writing period.
When is turned off, since the potential of the video signal is held by the capacitor elements 306a and 306b, no current is supplied to the light-emitting element 205.

In the case of performing time gradation display, an erasing period can be provided by the erasing TFTs 311 and 312 and the erasing scanning line 303a connected thereto, which is preferable for high gradation display.

FIG. 11C illustrates a pixel circuit in the case where the driving TFTs 307 and 310 are connected to the scanning line 303c. Since the configuration is the same as that shown in FIG. 11B except that the gate electrodes of the driving TFTs 307 and 310 are connected to the newly arranged scanning line 303c, detailed description thereof is omitted.

First, when the first scanning line 303b is selected in the writing period, the switching TFTs 304 and 305 to which the gates are connected are turned on. And the signal line 301a,
The video signal input to 301 b is input to the gates of current control TFTs 308 and 309 via switching TFTs 304 and 305. At the same time, the potential of the video signal is held by the capacitor elements 306a and 306b.

In the lighting period, the scanning line 303c is selected, and the driving TFTs 307 and 310 whose gates are connected to the second scanning line Gej (j = 1 to y) are turned on. At this time, the capacitive element 306
a, the current control TFTs 308, 3 by the potential of the video signal held by a, 306b.
When 09 is turned on, a current is supplied to the light emitting element 205 via the current supply lines 302a and 302b.
To be supplied. At this time, since the current control TFTs 308 and 309 operate in the linear region, the current flowing through the light emitting element 205 is determined by the voltage-current characteristics of the driving TFTs 307 and 310 operating in the saturation region and the light emitting element 205. Then, the light emitting element 205 emits light with a luminance with a height corresponding to the supplied current.

When the current control TFTs 308 and 309 are turned off by the potential of the video signal held by the capacitor elements 306a and 306b, no current is supplied to the light emitting element 205, and the light emitting element 205 does not emit light.

In the non-lighting period, the driving TFTs 307 and 310 are turned off by the second scanning line 303c. As a result, no current is supplied to the light emitting element 205.

    Note that in the writing period, the scanning line 303c may be selected or may not be selected.

In the case of performing time gradation display, an erasing period can be provided by the erasing TFTs 311 and 312 and the erasing scanning line 303a connected thereto, which is preferable for high gradation display.

    Thus, various displays can be performed with the pixel configuration of the present invention.

As described above, by arranging the circularly polarizing plate or the polarizing plate in a state where the transmittance is the lowest, a beautiful black display can be performed and reflected light can also be prevented. As a result, contrast can be increased.

The present invention having the above-described configuration will be described in more detail with the following examples.

In this embodiment, an example is shown in which a full-color, 2.1-inch dual emission display device (also referred to as a dual emission display) is manufactured. The display of this embodiment is characterized in that light of the same brightness is extracted from both sides, and images can be viewed from both the upper and lower surfaces of the display.

The organic EL element is a transparent electrode (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), indium tin oxide containing SiOx (ITSO) provided on a substrate. )) As an anode, HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), EIL (electron injection layer), transparent cathode electrode (ITO (indium oxide oxide)) Tin alloy), indium oxide zinc oxide alloy (I
n ₂ O ₃ —ZnO), zinc oxide (ZnO), indium tin oxide containing SiOx (ITSO)
) Etc.). By appropriately setting these materials and film thickness, the light emission characteristics of the lower surface side (bottom) and the upper surface side (top) are made the same.

In this example, ITO having a film thickness of 110 nm is used as an anode, and α-NPD: MoO is used as HIL.
x: rubrene is vapor-deposited with a film thickness of 120 nm, and α-NPD is vapor-deposited with a film thickness of 10 nm as HTL. The red light-emitting layer is made of Alq: rubrene: BisDCJTM with a thickness of 50 nm, the blue light-emitting layer is made of tBu-DNA with a thickness of 40 nm, and the green light-emitting layer is made of Alq: coumarin 6 with a thickness of 4
Evaporate each at 0 nm. Also, as ETL, Alq was deposited with a film thickness of 20 nm, and EIL
BzOS: Li is deposited with a film thickness of 20 nm. Note that the R, G, and B light emitting elements are different in only the light emitting layer, and the other layers are common. Further, the transparent cathode electrode is formed by depositing ITO having a film thickness of 110 nm by sputtering. By using a benzoxazole derivative (BzOS), damage caused by sputtering during formation of the transparent cathode electrode is suppressed.

The transmittance of the transparent cathode electrode (ITO) is 89% with respect to light having a wavelength of 530 nm.
Further, FIG. 1 shows the result of plotting the light emission characteristics of the lower surface side (bottom) and the upper surface side (top) of this organic EL element on a chromaticity diagram.

  The cross-sectional structure of the manufactured panel is shown in FIG.

In FIG. 2, 400 and 408 are substrates having translucency, 401 and 409 are optical films, 402R is a TFT disposed in a red pixel, 402G is a TFT disposed in a green pixel,
402B is a TFT arranged in a blue pixel, 403 is an anode, 404 is HTL (hole transport layer), 405R, 405G and 405B are EML (light emitting layer), 406 is ETL (electron transport layer)
, 407 are transparent cathode electrodes. As the arrangement of the pixel electrodes, a stripe arrangement, a delta arrangement, a mosaic arrangement, and the like can be given.

Note that as the TFTs 402R, 402G, and 402B, top gate type TFTs having a polysilicon film as an active layer are used. The polysilicon film is formed by forming a semiconductor film having an amorphous structure by a known means (sputtering method, LPCVD method, plasma CVD method, etc.), and then known crystallization treatment (laser crystallization method, thermal crystallization method). Or a thermal crystallization method using a catalyst such as nickel). In this embodiment, here, a crystallization technique using nickel as a metal element for promoting crystallization of silicon is used, and after obtaining a polysilicon film by crystallization, gettering for removing nickel is performed.

Further, the present invention can be applied regardless of the TFT structure, not limited to the top gate type TFT. For example, a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used. . Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

In addition, a source driver, a gate driver, and a pixel portion circuit are integrally formed on the substrate using this TFT. As a driving method, time gradation control of a digital driving method is performed.

  The specifications are shown in Table 3.

In the dual emission type display device, there is no adverse influence of external light from either the upper surface or the lower surface in combination with a transmissive display characterized by transparent display and an optical film (polarizing plate or retardation plate). Therefore, it is possible to selectively use a non-transparent display on which a good image can be viewed according to the application.

FIG. 12A is configured to prevent a decrease in contrast due to transmitted light and reflected light due to external light. For the transmitted light, the unwanted light that is linearly polarized by the polarizing plate on the incident side is λ / 4
By passing through the plate twice, it receives an optical modulation action equivalent to that of the λ / 2 plate. As a result, the linearly polarized light of the unnecessary light rotates 90 degrees, is input to the output-side polarizing plate, and is absorbed by matching with the absorption axis of the polarizing plate. In FIG. 12A, the direction of rotation of the arrow that has passed through the λ / 4 plate is the slow axis.

With respect to unnecessary light that is reflected by the reflecting material inside the display, the linearly polarized light that has entered through the polarizing plate passes through the λ / 4 plate, becomes circularly polarized light, and is reflected by the reflecting material. This reflected circularly polarized light is incident again on the same λ / 4 plate, but the relationship at that time can be regarded as equivalent to that of the above-mentioned transmitted light, and the output light from the λ / 4 plate after re-passing is a straight line. Rotates 90 degrees as polarized light. Therefore, it reaches the incident polarizing plate again, but is absorbed by the absorption axis. As a result, it is possible to prevent an adverse effect on image observation due to unnecessary light. The image from the display is random light, and reaches the observer through the λ / 4 plate except for the component that matches the absorption axis of the polarizing plate.

FIG. 12B illustrates an example of using only a polarizing plate. In FIG. 12B, the transmission unnecessary light is as shown in the figure. It is absorbed by the absorption axis of the output side polarizing plate arranged in crossed Nicols. Unreflected light due to reflection inside the display can be reduced by more than 60% by passing through the polarizing plate twice, and an improvement in contrast can be estimated.

These systems are characterized in that they have the same optical function from either side, and are even more effective when combined with anti-reflection treatment.

Table 4 shows the optical characteristics of the transmission type specification and the above-mentioned two types of non-transmission type specifications. Type A is the method shown in FIG. 12A, and type B is the method shown in FIG.

As shown in Table 4, by adopting the optical adjustment of the laminated film in the panel and the transparent cathode electrode, almost the same brightness and chromaticity can be obtained from the upper and lower surfaces of the transmissive / non-transmissive display. It was. The transmission type has a transmittance of 31%, and the background can be seen through the display.

The non-transmission type specification provides a higher contrast in the indoor use environment than the transmission type specification. On the other hand, since the optical system using the polarizing plate is employed, the luminance of the image light is less than half.

Even in the non-transmissive type, the contrast characteristics vary greatly depending on the configuration of the optical film (type A, type B). Type A, which has a polarizing plate and a retardation plate, is an optical configuration that simultaneously realizes the action of canceling the reflection of external light reflected by the wiring existing in the substrate and the action of absorbing the light transmitted through the display. Is adopted.

For this reason, Type A is more than Type B where the polarizing plate is simply placed in crossed Nicols.
High contrast because it is not affected by external light due to reflection (over 400 under indoor lighting)
Will be obtained.

A display with a high aperture ratio or a structure that suppresses internal reflection can be expected to have the same characteristics as Type A even with Type B configuration.

For example, when the display panel of the present embodiment is mounted on a digital still camera, it is possible to take a picture while confirming the captured image even when facing the subject or from the subject side.

In addition, when combined with a folding electronic device such as a mobile phone or PDA, it can be used with only one display folded without the need for a complicated folding mechanism.
Both open and available.

    FIG. 13 shows a photograph of the appearance of a mobile phone equipped with the panel of this example.

In addition, since both sides can be displayed on a single display panel, only one drive circuit system is required.
Not only can it save power, it can also be made thinner and lighter.

Various electronic devices can be completed by mounting the dual emission display device of the present invention. Electronic devices include video cameras, digital cameras, goggle-type displays (head-mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook-type personal computers, game devices, and portable information terminals (mobile computers, A mobile phone, a portable game machine, an electronic book, or the like), an image playback device including a recording medium (specifically, a display capable of playing back a recording medium such as a digital versatile disc (DVD) and displaying the image) Apparatus).

FIG. 14A shows an example in which the dual emission display device (double-sided display panel) of the present invention is mounted on a foldable mobile phone.

FIG. 14A is a perspective view of a mobile phone, and FIG. 14B is a perspective view showing a folded state. A cellular phone includes a main body 2101, a housing 2102, display portions 2103a and 2103b.
, Voice input unit 2104, voice output unit 2105, operation keys 2106, external connection port 210
7, an antenna 2108, an imaging unit 2109, and the like.

14A and 14B each include a high-quality display portion 2103a and a display portion 2103b for full-color display. The display unit 2103a and the display unit 2103b are configured by a single panel (double-sided emission type panel), and the thickness size of an electronic device having a plurality of display screens can be reduced, reducing the weight and reducing the number of components. Can be achieved.

For the dual emission panel, the dual emission display device described in Embodiment 1, 2 or 3 can be used, and an optical film (a polarizing plate, a λ / 4 plate, a λ / 2 plate, or the like) is appropriately disposed. To do.

The display portion 2103a and the display portion 2103b have the same size, and the video signal is also common. When the display is performed on the display unit 2103a, the display is reversed left and right and the display unit 2
103b. In general, the user visually recognizes only the display of the display unit 2103b in the folded state, and visually recognizes only the display of the display unit 2103a in the opened state. Therefore, the user can switch the display by inverting the left and right according to the state of the mobile phone. The user may be recognized by

14A and 14B includes an imaging portion 2109 (CC
D or the like) and still images and moving images can be taken. The display unit 21 also on the imaging unit 2109 side.
03b is provided, and the subject can be displayed on the display portion 2103b. Therefore, when the user of the cellular phone shoots his / her face, it is convenient because the user can press the shutter while checking the captured image on the display unit 2103b in real time.

FIG. 14C is a perspective view of a notebook personal computer, and FIG. 14D is a perspective view showing a folded state. The notebook personal computer has a main body 2201,
Housing 2202, display portions 2203 a and 2203 b, keyboard 2204, external connection port 2
205, a pointing mouse 2206, and the like.

The notebook personal computer shown in FIGS. 14C and 14D includes a high-quality display portion 2203a that displays an image in full color in an open state, and a high-quality display that displays a full-color image in a folded state. Part 2203b. Therefore, the display portion 2203b can be checked while being carried in a folded state, which is convenient because it can be used like an electronic book (electronic book).

14A to 14D can be used as a single display unit, but in FIG. 14E, the dual emission is performed together with the display unit of the electronic device. A case of using a mold display device (double-sided display panel) will be described.

In particular, a dual emission display device (double-sided display panel) on a flexible substrate such as a plastic substrate.
When the is provided, it is possible to reduce the thickness of the housing and increase flexibility.

FIG. 14E illustrates an example in which a double-sided display panel 2303 is mounted on an electronic book. First
The housing 2305 has a first display portion 2301 (first display surface), and the double-sided display panel 23.
03 has a second display surface and a third display surface 2302, and the second housing 2306 has an operation button 2304 and a second display portion 2307 (fourth display surface), and has a double-sided display. Mold panel 23
03 is inserted between the first casing and the second casing. As the first display portion 2301 and the second display portion 2307, a display panel including a light-emitting element or a liquid crystal element can be used.

As an example of how to use the electronic book with the double-sided display panel 2303 inserted, it is possible to read the text on the first display surface and the third display surface, and refer to the figure displayed on the fourth display surface,
Convenient. At this time, the double-sided display type panel 2303 has the second display surface and the third display surface 23.
Since 02 cannot be displayed at the same time, when the page is turned, the display on the second display surface is switched to the display on the third display surface.

Further, when the first display unit 2301 reads the first display surface, reads the second display surface of the next page, and then starts turning the double-sided display panel, the third display surface is at an angle. The fourth display screen displays the next page, and when the third display screen 2302 and the fourth display screen are read and the double-sided display panel is turned, the first display screen is displayed at an angle. Displays the next page.
Thereby, it is possible to make the screen change invisible and to suppress visual discomfort and the like. In order to further reduce the uncomfortable feeling, a dual emission panel using a flexible substrate may be used. When a double-sided emission type panel using a flexible substrate is used, the weight is further reduced, so that the double-sided display type panel is easily turned.

In addition, the first display portion 2301 provided in the first housing 2305 may be a double-sided display panel, and the second display portion 2307 provided in the second housing 2306 is also a double-sided display type panel. Also good. In that case, since the first display portion 2301 has two display screens and the second display portion 2306 has two display screens, the electronic book can have a total of six display screens.

In FIG. 14E, an electronic book with one double-sided display panel 2303 is inserted, but an electronic book with a plurality of double-sided display panels inserted may be used.

FIG. 15A illustrates a digital video camera, which includes a main body 2601 and a display portion 2602.
, Housing 2603, external connection port 2604, remote control receiver 2605, image receiver 2606,
A battery 2607, a voice input unit 2608, operation keys 2609, and the like are included.

The display portion 2303 is provided with a double-sided display type panel. Note that the double-sided display panel includes a light-emitting element and is provided with an optical film in the combination described in any of Embodiments 1 to 3.

In particular, when shooting yourself as a subject using the digital video camera of this embodiment,
A double-sided light emitting panel is displayed. This is because the double-sided light emitting pixel unit can check the video captured from the image receiving unit on the display unit 2602 without inverting the housing 2603 while keeping the imaging unit facing itself.

Further, when a photographer (not shown) takes a picture of the subject 2610, the photographer (not shown) sees the display unit from the photographer side without inverting the housing 2603 as shown in FIG.
), The image of the subject can be displayed. On the other hand, the image on the display portion 2602, FIG. 15C can also be confirmed from the subject side. The image from the subject side is shown in FIG.
As shown in (C), the image of FIG. 15 (B) is displayed horizontally reversed. Note that one screen is flipped horizontally, making it difficult to read characters and the like. However, in video shooting or the like, there is no particular problem even if the screen is reversed as long as the arrangement of the subject on the screen can be confirmed.

In addition, it is possible to select which of the photographer or the subject 2610 recognizes which image in FIG. 15B or 15C.

Thus, when a double-sided display panel is mounted on a digital video camera, it is not necessary to rotate the panel. If the panel is rotated so that a panel displaying only one screen can be confirmed on the subject side instead of a double-sided display panel, the structure becomes complicated.
On the panel that displays only one screen, the photographer and the photographed person cannot simultaneously see the image shown on the panel.

In addition to digital video cameras, for example, when photographing yourself using a digital camera, it is possible to check your own image without inverting the housing by installing a pixel unit that emits light from both sides. . In this case, similarly to the digital video camera shown in FIG. 15A, the housing having the display portion has a mechanism for folding, so that the housing having the display portion can be separated from the main body of the digital camera. To.

Even in the case of a digital video camera, when the photographer photographs the subject 2610, a double-sided light emission panel is used, so that the photographer and the subject 2610 can check the image on the display portion 2602.

FIG. 16A illustrates a large double-sided display device having a large screen of 22 inches to 50 inches, which includes a housing 2701, a supporting base 2702, a display portion 2703, a video input terminal 2705, and the like. The display device includes all information display devices such as a personal computer, a TV broadcast receiver, and an interactive TV. According to the present invention, even a large-sized double-sided display device having a large screen can realize a display device that is thin and lightweight and has a beautiful black display and full color display.

FIG. 16B illustrates a TV that can carry only a display wirelessly. A housing 2802 incorporates a battery and a signal receiver, and the display portion 2604 and the speaker portion 2807 are driven by the battery. The battery can be repeatedly charged by the charger 2800. The charger 2800 can send and receive video signals.
This video signal can be transmitted to the signal receiver of the display. The housing 2802 is controlled by operation keys 2806. In addition, the device illustrated in FIG.
By operating, it is possible to send a signal from the housing 2802 to the charger 2800. In addition, by operating the operation key 2806, a signal is transmitted from the housing 2802 to the charger 2800, and further, a signal that can be transmitted by the charger 2800 is received by another electronic device, thereby controlling communication of the other electronic device. It can be said to be a general-purpose remote control device. According to the present invention, relatively large (22 inches to 50 inches)
However, it is possible to realize a TV that can display both sides with a portable weight.

FIG. 16C shows an outer wall 29 in a store or a building such as a restaurant or a clothing store.
00 or the door 2906 is an example in which a dual emission type display device is installed. For example, when a dual-emission display device is fitted like a window into a frame 2902 of an outer wall 2900 facing a street in a store, a display (advertisement) that a person walking in the street and a person in the store are projected on the display unit 2903 Display etc.) at the same time. Therefore, if a dual emission display device is used, product information can be provided not only to a large number of people, that is, people outside the store but also inside the store, and functions as a show window that introduces the product on a video display. be able to. Further, the power consumption is useful because it is possible to make the advertisement display visible from a wide range around the panel, although it is equivalent to one panel even if it is displayed on two screens.

In addition, when a dual emission display device is installed in the door 2906 and the display portion 2904 is provided, the door 2906 can function as a show window. Even when the door 2906 is closed, or even when the door is fully opened and the door is turned over, the display can be visually recognized because it is a dual emission display device. Reference numeral 2905 denotes a handle. Moreover, even if a dual emission display device is installed like a signboard, the advertisement display can be viewed from a wide range around the panel, which is useful.

Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Example 1.

New applications and markets can be provided by a dual emission display device that has a beautiful black display and full color display. For example, it can be used for a show window or the like. Therefore, the application is not limited to portable devices, and the application range is very wide.

It is a comparison figure of color coordinates. It is a figure which shows the cross-section of a panel. The figure which shows arrangement | positioning of the circularly-polarizing plate of this invention. The figure which shows arrangement | positioning of the circularly-polarizing plate of this invention. The figure which shows the experiment regarding this invention. The graph which shows the experimental result regarding this invention. The figure which shows the experiment regarding this invention. The graph which shows the experimental result regarding this invention. The figure which shows the dual emission type display apparatus of this invention. The figure which shows the dual emission type display apparatus of this invention. 1 is a diagram showing a circuit configuration of a dual emission display device of the present invention. FIG. 3 is a diagram showing the arrangement of polarizing plates of Example 1. It is an external appearance photograph figure of a mobile phone. FIG. 13 is a diagram showing an electronic device on which a dual emission display device of the invention is mounted. FIG. 13 is a diagram showing an electronic device on which a dual emission display device of the invention is mounted. FIG. 13 is a diagram showing an electronic device on which a dual emission display device of the invention is mounted. The figure which shows the definition of a slip angle.

Claims (6)

A first electrode having non-translucency;
A second electrode having translucency;
A light emitting layer provided on the first electrode and the second electrode;
A third electrode having translucency provided on the light emitting layer;
A film having a non-translucent material provided on the third electrode and disposed at a position overlapping the second electrode;
First to eighth transistors;
First and second current supply lines;
First and second capacitive elements;
First and second signal lines;
First and second scan lines, and
(A) One of the source and the drain of the first transistor is electrically connected to the first electrode,
The other of the source and the drain of the first transistor is electrically connected to one of the source and the drain of the second transistor;
A gate of the first transistor is electrically connected to the first current supply line;
The other of the source and the drain of the second transistor is electrically connected to the first current supply line;
The second transistor is controlled to be turned on or off by a first video signal,
The first video signal is input to the gate of the second transistor via the fifth transistor;
One of the source and the drain of the fifth transistor is electrically connected to the first signal line to which the first video signal is supplied,
The other of the source and the drain of the fifth transistor is electrically connected to the gate of the second transistor;
A gate of the fifth transistor is electrically connected to the first scanning line;
One of a source and a drain of the seventh transistor is electrically connected to a gate of the second transistor;
The other of the source and the drain of the seventh transistor is electrically connected to the first current supply line,
A gate of the seventh transistor is electrically connected to the second scanning line;
One terminal of the first capacitor element is electrically connected to one of a source or a drain of the seventh transistor,
The other terminal of the first capacitor element is electrically connected to the other of the source and the drain of the seventh transistor;
(B) One of the source and the drain of the third transistor is electrically connected to the second electrode,
The other of the source and the drain of the third transistor is electrically connected to one of the source and the drain of the fourth transistor;
A gate of the third transistor is electrically connected to the second current supply line;
The other of the source and the drain of the fourth transistor is electrically connected to the second current supply line;
The fourth transistor is controlled to be turned on or off by a second video signal,
The second video signal is input to the gate of the fourth transistor via the sixth transistor;
One of the source and the drain of the sixth transistor is electrically connected to the second signal line to which the second video signal is supplied,
The other of the source and the drain of the sixth transistor is electrically connected to the gate of the fourth transistor;
A gate of the sixth transistor is electrically connected to the first scanning line;
One of a source and a drain of the eighth transistor is electrically connected to a gate of the fourth transistor;
The other of the source and the drain of the eighth transistor is electrically connected to the second current supply line;
A gate of the eighth transistor is electrically connected to the second scanning line;
One terminal of the second capacitor element is electrically connected to one of a source or a drain of the eighth transistor,
The other terminal of the second capacitor element is electrically connected to the other of the source and the drain of the eighth transistor;
(C) the first and third transistors operate in a saturation region;
The display device, wherein the second and fourth transistors operate in a linear region. Oite to claim 1,
The first and third transistors are depletion type,
The display device, wherein the second and fourth transistors are enhancement type transistors. In claim 1 or claim 2 ,
A first substrate and a second substrate;
The first electrode, the second electrode, the third electrode, the light emitting layer, and the film having a non-light-transmitting material are disposed between the first substrate and the second substrate. A display device characterized by being made. In any one of Claims 1 thru | or 3 ,
A first polarizing plate and a second polarizing plate;
The film including the first electrode, the second electrode, the third electrode, the light emitting layer, and the non-translucent material is between the first polarizing plate and the second polarizing plate. A display device characterized by being arranged in the above. In any one of Claims 1 thru | or 3 ,
Having a first circularly polarizing plate and a second circularly polarizing plate;
The first electrode, the second electrode, the third electrode, the light emitting layer, and the film having a non-translucent material are formed of the first circularly polarizing plate and the second circularly polarizing plate. A display device characterized by being arranged between. In any one of Claims 1 thru | or 5 ,
A display device, wherein an interlayer insulating film is provided between the first to fourth transistors and the first and second electrodes.