JP4873230B2 - Exposure method, exposure apparatus, measurement method, and measurement apparatus - Google Patents

Description

  The present invention relates to an exposure method, an exposure apparatus, a measurement method, and a measurement apparatus. More specifically, the present invention relates to an exposure method and apparatus that superimposes and transfers an image of a predetermined pattern to each of a plurality of pattern regions on a substrate, and a plurality of on a substrate. The present invention relates to a measurement method and apparatus for measuring shape information of each pattern area.

  In a device manufacturing process of a semiconductor element or a liquid crystal display element, in order to form a circuit pattern (device pattern) hierarchically, each of the regions (shot regions) where the circuit pattern on the semiconductor substrate or the liquid crystal substrate is formed is further It is necessary to superimpose and transfer the device pattern image on the reticle. For this reason, conventionally, alignment of the substrate and the device pattern of the reticle, so-called wafer alignment, has been performed (see, for example, Patent Document 1).

  This wafer alignment is basically the alignment of the center of the shot area on the substrate and the center of the reticle device pattern. Strictly speaking, however, the patterns can be accurately aligned even at locations other than the shot center. Of course, it is desirable to align, and it is ideal to accurately align the entire shot area. In order to realize such alignment, it is necessary to grasp in advance the shape of the device pattern formed on the substrate, and to bring the image of the device pattern to be transferred closer to that shape.

  However, the shape of each shot region on the substrate varies depending on the shot region due to deformation of the substrate caused by the process. Therefore, in order to grasp the shape of each shot area, it is necessary to measure a large number of alignment marks for each shot area, and there is a concern that the throughput of the exposure process will be reduced by the time required for the measurement.

JP-A 61-44429

According to a first aspect of the present invention, there is provided an exposure method for superimposing and transferring an image of a predetermined pattern on each of a plurality of pattern areas on a substrate, wherein the positions of the plurality of marks arranged in each of the pattern areas A first sub-process for measuring information, a second sub-process for calculating shape information of the pattern area based on the position information of the mark with a plurality of different sample numbers and arrangements, and position information of the plurality of marks The shape information of the pattern region calculated based on the difference between the shape information of each pattern region calculated under the number of samples and the arrangement different from the number of the plurality of marks in the first sub-process comparing the third includes a sub-step, a image and each of patterns territory of the predetermined pattern to determine the number of samples and arrangements the difference falls within a predetermined range, as the optimal method for obtaining An optimization step of optimizing a method for acquiring shape information of each of the plurality of pattern areas on the substrate prior to the overlay transfer; and using the optimized acquisition method during the overlay transfer An acquisition step of acquiring shape information of each of the plurality of pattern regions on the substrate.

  According to this, since the acquisition method of the shape information of each of the plurality of pattern areas on the substrate is optimized prior to the overlay transfer of the image of the predetermined pattern and the pattern area on the substrate, the optimized acquisition method The shape information of each of the plurality of pattern areas on the substrate at the time of overlay transfer can be acquired with high accuracy and high throughput.

According to a second aspect of the present invention, there is provided a measurement method for measuring shape information of each of a plurality of pattern areas on a substrate, wherein the position information of a plurality of marks arranged in each of the pattern areas is measured. Calculated based on one sub-process, a second sub-process that calculates shape information of the pattern area based on the position information of the mark, and a plurality of different sample numbers and arrangements, and the position information of the plurality of marks. Comparing the difference between the shape information of the pattern region and the shape information of each pattern region calculated under the number of samples and the arrangement different from the number of the plurality of marks in the first sub-step, the number of samples and arrangements difference falls within a predetermined range, wherein the third sub-step of determining a best acquisition method, superposition of image and the respective pattern regions of the predetermined pattern transfer An optimization step of optimizing a method for acquiring shape information of each of a plurality of pattern regions on the substrate; and a plurality of the plurality of regions on the substrate during the overlay transfer under the optimized acquisition method. An acquisition step of acquiring shape information of each of the pattern regions.

  According to this, since the acquisition method of the shape information of each of the plurality of pattern areas on the substrate is optimized prior to the overlay transfer of the image of the predetermined pattern and the pattern area on the substrate, the optimized acquisition method The shape information of each of the plurality of pattern areas on the substrate at the time of overlay transfer can be acquired with high accuracy and high throughput.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 shows a schematic configuration of a device manufacturing processing system according to an embodiment of the present invention. As shown in FIG. 1, a device manufacturing processing system 1000 is built in a device manufacturing factory to process semiconductor wafers and manufacture micro devices on the wafers. As shown in FIG. 1, the device manufacturing processing system 1000 includes an exposure apparatus 100, a track 200 disposed adjacent to the exposure apparatus 100, a management controller 160, an analysis apparatus 500, and a host system 600. And a device manufacturing processing apparatus group 900.

[Exposure equipment]
The exposure apparatus 100 is an apparatus that transfers a device pattern to a wafer coated with a photoresist. The exposure apparatus 100 is illuminated with an illumination system 10 that emits coherent exposure light IL, a reticle stage (not shown) that holds a reticle R on which a device pattern illuminated by the exposure light IL is formed, and the exposure light IL. A double-sided telecentric projection optical system PL for projecting a device pattern and the like, a wafer stage WST for holding a wafer W to be exposed, an off-axis alignment system AS, and a main controller 20 for comprehensively controlling them.

  The exposure light IL from the illumination system 10 illuminates a device pattern such as a circuit pattern formed on the reticle R held on the reticle stage. This irradiation area is defined as an illumination area IAR. The exposure light IL that has passed through the illumination area IAR is guided to the exposure surface of the wafer W held on the wafer stage WST via the projection optical system PL and the wafer holder WH. Thereby, a projected image of the device pattern in the illumination area IAR is formed on the exposed surface of the wafer W. An area where this projection image is formed is defined as an exposure area IA.

  Here, consider an XYZ coordinate system in which the coordinate axis parallel to the optical axis of the projection optical system PL is the Z axis. Wafer stage WST can move in the XY plane (that is, in the X-axis, Y-axis, and θz-axis directions), and the surface of wafer W is shifted in the Z-axis direction, in the θx (rotation around the X-axis) direction, and in θy ( (Rotation around the Y axis) direction, that is, 6 degrees of freedom can be adjusted. The reticle stage can move in the Y-axis direction in synchronization with wafer stage WST.

  By the synchronous scanning in the Y-axis direction corresponding to the projection magnification of the projection optical system PL of both stages, the exposed surface of the wafer W is exposed in synchronization with the device pattern on the reticle R crossing the illumination area IAR. The region IA is crossed. As a result, the entire device pattern on the reticle R is transferred onto the wafer W. The exposure apparatus 100 repeats the above-described relative synchronous scanning of both stages and the stepping of the wafer stage WST with respect to the exposure light IL, so that a device on the reticle R is placed on a plurality of different areas (shot areas SA) on the wafer W. The pattern is transferred. That is, the exposure apparatus 100 is a scanning exposure (step-and-scan) type exposure apparatus.

  The main controller 20 includes a stage control system that performs synchronous control of both stages and autofocus / leveling control (hereinafter simply referred to as focus control) for matching the surface of the wafer W within the depth of focus of the projection optical system PL. Various control systems such as a lens control system for controlling the imaging performance of the projection optical system PL (all not shown) are constructed.

  Among the stage control systems, a control system that performs synchronous control of both stages is a synchronous control system, and the Z position of the stage position (wafer surface) (that is, the wafer position with respect to the focus direction of the projection optical system PL), the X axis, A control system that controls the amount of rotation around the axis (the tilt of the wafer surface with respect to the projected image of the device pattern) is referred to as a focus control system.

  The synchronous control system performs synchronous control of both stages during scanning exposure, and performs feedback control to reduce the synchronization error based on the measured value of an interferometer or the like that measures the position of both stages. Further, the exposure apparatus 100 is provided with an oblique incidence type focus detection system (not shown) for detecting a focus / leveling shift on the wafer surface at a plurality of measurement points.

  The focus control system of the main controller 20 matches the exposed surface of the wafer W that crosses the exposure area IA with the image surface of the projection optical system PL based on the surface height and inclination of the exposed surface of the wafer W. Feedback control is performed.

  Projection optical system PL includes a plurality of optical systems (not shown) such as refractive optical elements (lens elements). Among these lens elements, some lens elements are movable lenses whose positions and postures can be adjusted from the outside by a lens control system. Each of these lens elements is shift-driven in the X-axis, Y-axis, and Z-axis (optical axis) directions, and can be rotationally driven around each axis (θx, θy, θz), that is, driven with six degrees of freedom. It has a possible configuration. The lens control system can change the shape of the pattern image on the reticle projected onto the exposed surface of the wafer W by driving these lens elements.

  Wafer W carried into exposure apparatus 100 is loaded on wafer stage WST in a state of being roughly aligned with respect to its outer shape. Thereby, the holding position of the wafer W loaded on the wafer stage WST and the rotation amount around θz are always substantially the same.

  As shown in FIGS. 2 and 3A, when rectangular shot areas SA on which a device pattern is transferred are already formed in an array on the wafer W, devices on the reticle R are formed. It is necessary to accurately superimpose and transfer the pattern onto the shot area SA. Therefore, in exposure apparatus 100, wafer mark (wafer mark M attached to shot area SA) formed with the device pattern on wafer W loaded on wafer stage WST is measured by off-axis alignment system AS. Then, the position coordinates of the mark in the XY coordinate system are measured.

  In order to perform accurate overlay transfer of device patterns, the positional information of all wafer marks on the wafer W may be measured, but this may affect the throughput. Therefore, the exposure apparatus 100 employs a global alignment technique that limits the wafer marks to be actually measured and statistically estimates the arrangement of the shot areas SA on the wafer W from the measurement results of the measured wafer mark positions. ing. In the exposure apparatus 100, as this global alignment, the deviation of the actual shot arrangement from the designed shot arrangement is expressed by a polynomial having X and Y position coordinates as independent variables, and statistical calculation is performed to obtain an appropriate coefficient in the polynomial. So-called EGA type wafer alignment is employed. In the EGA-type wafer alignment, first, several shot areas for measuring a measurement target wafer mark are selected. The selected shot area is called a sample shot. The alignment system AS measures the position of a wafer mark (sample mark) attached to the sample shot. Such a measurement operation is hereinafter referred to as EGA measurement.

  In the EGA wafer alignment, the X and Y position coordinates on the design of the sample mark with the wafer center as the origin are expressed by (Wx, Y) by statistical calculation based on the measurement result of this EGA measurement, that is, the position information of several sample marks. The correction amount (ΔX, ΔY) of the X and Y position coordinates of the center of each shot area SA with respect to the designed position coordinates (Wx, Wy) is estimated.

For example, assume that correction amounts in the X-axis direction and Y-axis direction of the shot center of a certain shot area SA are (ΔX, ΔY). Considering only the linear components of the array of shot areas SA, (ΔX, ΔY) is expressed by a first-order polynomial of (Wx, Wy) as in the following equation.
ΔX = Cx — 10 · Wx + Cx — 01 · Wy + Cx — 00 + ΔSX (W1-1)
ΔY = Cy — 10 · Wx + Cy — 01 · Wy + Cy — 00 + ΔSY (W1-2)
Here, Cx_10, Cx_01, Cx_00, Cy_10, Cy_01, and Cy_00 are coefficients of the first-order component and the zero-order component such as the scaling component, the rotation component, and the offset component of the shot arrangement. Note that (ΔSX, ΔSY) will be described later.

Further, considering up to the second order component of the array of shot areas SA, (ΔX, ΔY) is expressed by a second order polynomial of (Wx, Wy) as in the following equation.
ΔX = Cx — 20 • Wx ² + Cx — 11 • Wx • Wy + Cx — 02 • Wy ² + Cx — 10 • Wx + Cx — 01 • Wy + Cx — 00 + ΔSX (W2-1)
ΔY = Cy — 20 · Wx ² + Cy — 11 · Wx · Wy + Cy — 02 · Wy ² + Cy — 10 · Wx + Cy — 01 · Wy + Cy — 00 + ΔSY (W2-2)
Here, Cx_20, Cx_11, Cx_02, Cy_20, Cy_11, and Cy_02 are coefficients of secondary components.

Further, considering up to the third order component of the array of shot areas SA, (ΔX, ΔY) is expressed by a third order polynomial of (Wx, Wy) as in the following equation.
ΔX = Cx — 30 • Wx ³ + Cx — 21 • Wx ² • Wy + Cx — 12 • Wx • Wy ² + Cx — 03 • Wy ³ + Cx — 20 • Wx ² + Cx — 11 • Wx • Wy + Cx — 02 • Wy ² + Cx — 10 • Wx + Cx — 01 • Wy + Cx — 01 • Wy + Cx — 01 • Wy + Cx
ΔY = Cy_30 · Wx ³ + Cy — 21 · Wx ² · Wy + Cy — 12 · Wx · Wy ² + Cy — 03 · Wy ³ + Cy — 20 · Wx ² + Cy —11 · Wx · Wy + Cy — 02 · Wy ² + Cy — 10 · Wx + Cy — 00 · Wy + Cy — 00 · Wy + Cy — 01 · Wy + Cy
Here, Cx_30, Cx_21, Cx_12, Cx_03, Cy_30, Cy_21, Cy_12, and Cy_03 are cubic coefficients.

  In the present embodiment, based on the EGA measurement, based on the obtained wafer mark position information, it is determined to which level of order the components of the array of shot areas SA are to be considered, and the determination result corresponds to the determination result. Any of the above formulas (W1-1) and (W1-2), the formula (W2-1), the formula (W2-2), the formula (W3-1), and the formula (W3-2) The coefficient of the above equation is obtained using one set, for example, using the least square method. Such an operation is hereinafter referred to as an EGA operation. The XY correction amount (ΔX, ΔY) at the position of each shot area SA obtained by the above polynomial is referred to as an EGA correction amount. The details of the EGA type wafer alignment are disclosed in, for example, Japanese Patent Laid-Open No. 61-44429.

  The above-described formulas (W1-1) to (W3-2) represent the arrangement of the shot areas SA, and are used to align the center of each shot area SA with the center of the device pattern on the reticle R. Information. In the present embodiment, not only the alignment between the centers but also the deformation of the shot area SA itself is considered. The terms (ΔSX, ΔSY) described above are provided in consideration of deformation of the shot area SA itself.

  As shown in FIG. 3B, a plurality of wafer marks M are transferred and formed in each shot area SA in an evenly arranged state. FIG. 3B shows an enlarged view of a wafer mark M which is an example of the wafer mark. That is, the wafer mark M has a two-dimensional position detection in which a line-and-space pattern (L / S pattern) having the arrangement direction in the X-axis direction and an L / S pattern having the arrangement direction in the Y-axis direction. It is a mark for.

  Since a plurality of wafer marks M are arranged in the shot area SA, the shape of the shot area SA can be grasped based on the overall positional relationship of the individual wafer marks M. In the above formulas (W1-1) to (W3-2), the deviation amount between the shape of the shot area SA, that is, the design XY position coordinates of the pattern in the shot area SA and the actual XY position coordinates is represented by (ΔSX, ΔSY). The shape (ΔSX, ΔSY) of the shot area SA can also be expressed by a polynomial of (Sx, Sy) in consideration of the XY coordinate system (Sx, Sy) with the center in the shot as the origin.

For example, considering only the linear component of the shape of the shot area SA, (ΔSX, ΔSY) is represented by a first order polynomial of (Sx, Sy) as shown in the following equation.
ΔSX = Csx — 10 · Sx + Csx — 01 · Sy + Csx — 00 (S1-1)
ΔSY = Csy_10 · Sx + Csy_01 · Sy + Csy_00 (S1-2)
Here, Csx_10, Csx_01, Csx_00, Csy_10, Csy_01, and Csy_00 are coefficients of primary components and zero-order components such as a scaling component, a rotation component, and an offset component of the shot area SA.

Further, considering the shape of the shot area SA up to its secondary component, (ΔSX, ΔSY) is expressed by the following equation.
ΔSX = Csx — 20 · Sx ² + Csx —11 · Sx · Sy + Csx — 02 · Sy ² + Csx —10 · Sx + Csx — 01 · Sy + Csx —00 (S2-1)
ΔSY = Csy — 20 · Sx ² + Csy — 11 • Sx • Sy + Csy — 02 • Sy ² + Csy —10 • Sx + Csy —01 • Sy + Csy —00 (S2-2)
Here, Csx — 20, Csx — 11, Csx — 02, Csy — 20, Csy — 11, and Csy — 02 are secondary component coefficients.

Further, considering the shape of the shot area SA up to the third order component, (ΔSX, ΔSY) is expressed by the following equation.
ΔSX = Csx — 30 · Sx ³ + Csx —21 · Sx ² · Sy + Csx —12 · Sx · Sy ² + Csx —03 · Sy ³ + Csx —20 · Sx ² + Csx —11 · Sx · Sy + Csx —02 · Sy ² + Csx_10 · Sx + Sx + 10 × S01
ΔSY = Csy_30 · Sx ³ + Csy_21 · Sx ² · Sy + Csy_12 · Sx · Sy ² + Csy_03 · Sy ³ + Csy_20 · Sx ² + Csy_11 · Sx · Sy + Csy_02 · Sy ² + Csy_10_S01 + Sy + 10
Here, Csx — 30, Csx — 21, Csx — 12, Csx — 03, Csy — 30, Csy — 21, Csy — 12, and Csy — 03 are third-order coefficients.

  In the present embodiment, the alignment system AS is used to detect the position information of the plurality of wafer marks M in the shot area SA, and the X and Y position coordinates of the center of the sample shot are calculated based on the position information. In addition, the above formula (S1-1), the set of formula (S1-2), the above formula (S2-1), the set of formula (S2-2), and the above formula (S3-1) representing the shape of the shot area SA. ), A coefficient when polynomial fitting is performed using any one of the sets of equations (S3-2) is obtained using, for example, the least square method.

  The main controller 20 is a computer system that controls various components of the exposure apparatus 100 as described above. Various operations of the exposure apparatus 100 are realized by the overall control of the main controller 20, and the above-described synchronous control system, focus control system, lens control system, and the like are included in the main controller 20. The main controller 20 is connected to a communication network constructed in the device manufacturing processing system 1000, and can send and receive data to and from the outside via the communication network. The main control device 20 operates in response to a command via this communication network, transmits trace data of various control errors to the analysis device 500, receives information on the parameters optimized by the analysis device 500, Set in main controller 20.

[truck]
Returning to FIG. 1, the track 200 is disposed in contact with a chamber (not shown) surrounding the exposure apparatus 100. The track 200 mainly carries the wafer W into and out of the exposure apparatus 100 by a transfer line provided inside.

[Coater / Developer]
In the track 200, a coater / developer (C / D) 110 including a coater for performing a resist coating process, a developer for performing a development process, a PEB apparatus for performing a PEB process, and the like is provided. The C / D 110 can operate independently of external apparatuses such as the exposure apparatus 100 and the measurement / inspection instrument 120. The C / D 110 is arranged along a transfer line in the track 200, and the transfer of the wafer W can be performed between the exposure apparatus 100, the C / D 110 and the outside of the track 200 by this transfer line. Further, the C / D 110 is connected to a communication network in the device manufacturing processing system 1000, and can send and receive data to and from the outside.

  That is, the exposure apparatus 100 and the C / D 110 in the track 200 are connected inline to each other. Here, the in-line connection means that the apparatuses and the processing units in each apparatus are connected via a transfer device that automatically transfers the wafer W such as a robot arm or a slider. With this in-line connection, the transfer time of the wafer W between the exposure apparatus 100 and the C / D 110 can be remarkably shortened.

  The exposure apparatus 100 and the track 200 that are connected in-line can be regarded as one substrate processing apparatus (100, 200). The substrate processing apparatus (100, 200) applies a photosensitive agent such as a photoresist to the wafer W, and projects and exposes a mask or reticle R pattern image on the wafer W coated with the photosensitive agent. An exposure process to be performed, a PEB process after the exposure process is completed, a subsequent development process to develop the wafer W, and the like are performed. Actually, the device manufacturing processing system 1000 includes a plurality of substrate processing apparatuses (100, 200).

[Measurement and inspection equipment]
The measurement / inspection instrument 120 is a complex measurement / inspection instrument capable of performing various measurement / inspections on the wafer W. Similar to wafer stage WST in exposure apparatus 100, measurement / inspection instrument 120 uses a wafer holder that is matched with wafer holder WH of exposure apparatus 100 (the difference in state of wafer W is known when held by each wafer holder WH). A stage for holding the wafer W is provided. Similar to wafer stage WST, the XY position of this stage is always measured by an interferometer (not shown). The controller of the measurement / inspection instrument 120 controls the XY position of the stage based on the measurement position of the interferometer. The measurement / inspection instrument 120 includes an alignment system similar to the alignment system AS of the exposure apparatus 100. The measurement / inspection instrument 120 can measure the position of the wafer mark M on the wafer W in the same manner as the exposure apparatus 100.

  In addition to the above, the measurement / inspection instrument 120 is provided with various sensors according to the required measurement / inspection contents. The measurement / inspection instrument 120 can operate independently of the exposure apparatus 100 and the C / D 110. It is assumed that the transfer line in the device manufacturing processing system 1000 can be transferred for each wafer W between the exposure apparatus 100, the C / D 110, and the measurement / inspection instrument 120. The measurement / inspection instrument 120 can input / output data via a communication network.

[Device manufacturing processing equipment group]
The device manufacturing processing apparatus group 900 includes a CVD apparatus 910, an etching apparatus 920, a CMP apparatus 930, and an oxidation / ion implantation apparatus 940. The CVD apparatus 910 is an apparatus that generates a thin film such as an antireflection film or a topcoat film on the wafer W by using CVD (Chemical Vapor Deposition) or the like. The etching apparatus 920 is an apparatus that performs etching on the developed wafer W. The CMP apparatus 930 is a polishing apparatus that planarizes the surface of the wafer W by chemical mechanical polishing. The oxidation / ion implantation apparatus 940 is an apparatus for forming an oxide film on the surface of the wafer W or implanting impurities into a predetermined position on the wafer W.

  Between the CVD apparatus 910, the etching apparatus 920, the CMP apparatus 930, and the oxidation / ion implantation apparatus 940, a transfer path for enabling transfer of the wafer W between them is provided. In addition to this, the device manufacturing processing apparatus group 900 includes apparatuses that perform probing processing, repair processing, dicing processing, packaging processing, bonding processing, and the like.

[Management controller]
The management controller 160 centrally manages the exposure process performed by the exposure apparatus 100, and manages the C / D 110 and the measurement / inspection instrument 120 in the track 200 and controls their cooperative operation. As such a controller, for example, a personal computer can be adopted. The management controller 160 receives information indicating the progress status of processing and operation, information indicating processing results, and measurement / inspection results from each apparatus through a communication network in the device manufacturing processing system 1000, and manufactures the device manufacturing processing system 1000. Understand the situation of the entire line, and manage and control each device so that the exposure process and the like are performed appropriately.

[Analyzer]
The analysis apparatus 500 is connected to a communication network in the device manufacturing processing system 1000, and can transmit and receive data to and from various apparatuses in the device manufacturing processing system 1000. The analysis apparatus 500 analyzes the arrangement and shot shape of the shot areas SA on the wafer W to optimize the wafer alignment processing method performed by the exposure apparatus 100 and the like.

  As hardware for realizing such an analysis apparatus 500, for example, a personal computer can be employed. In this case, the analysis process is realized by executing an analysis program executed by a CPU (not shown) of the analysis apparatus 500. This analysis program is supplied by a medium (information recording medium) such as a CD-ROM and is executed in a state installed in a PC.

  Next, a flow of a series of device manufacturing steps in the device manufacturing system 1000 will be described. FIG. 4 shows a flowchart of this process. A series of processes of the device manufacturing system 1000 is scheduled and managed by the host 600 and the management controller 160. Actually, the processing shown in FIG. 4 is repeated for each wafer W in lot units. One or more device patterns are already formed on the wafer W. The process of the dotted line block in FIG. 4 is executed for the wafer W designated by the host 600 in the lot, and is not executed for the wafer W not designated.

  As shown in FIG. 4, first, a film is formed on the wafer W in the CVD apparatus 910 (step 201), the wafer W is transferred to the C / D 110, and a resist is applied on the wafer W in the C / D 110. (Step 203).

  The processes in the next step 205 and step 207 are executed only for the wafer W designated by the host 600. In step 205, the wafer W to be exposed is transferred to the measurement / inspection instrument 120, and the measurement / inspection instrument 120 performs a pre-measurement / inspection process on the wafer W. In step 207, the analysis apparatus 500 optimizes the wafer alignment processing method in the exposure apparatus 100 performed in step 209 described later. Here, if the alignment processing method is optimized in advance based on the measurement inspection result of the measurement / inspection instrument 120, the wafer alignment of the exposure apparatus 100 can be performed by the optimized alignment processing method. Become.

  First, in step 205, the wafer W is held on the wafer holder matched with the wafer holder WH by the measurement / inspection instrument 120, and the position information of all the wafer marks M in all the shot areas SA on the wafer W is measured. The measurement result is sent to the analysis apparatus 500.

  FIG. 5 shows a flowchart of alignment processing method optimization processing in the analysis apparatus 500 in step 207. As shown in FIG. 5, first, at step 301, the counter value i is set to 1. In the next step 305, function fitting of the shape of the shot area SA is performed based on the position information of all marks in the i-th shot area. The design XY position coordinates of the wafer mark M in the in-shot coordinate system are substituted into (Sx, Sy) in the above formulas (S1-1) to (S3-2), and all of (ΔSX, ΔSY) are substituted. Substituting the difference between the measured XY position coordinates of the mark and the designed XY position coordinates, and using the least squares method, the residuals are minimized (S1-1) to (S3-2). Estimate the value of each coefficient for all equations.

  In the next step 307, for each shot area SA, the set of formula (S1-1), formula (S1-2), formula (S2-1), set of formula (S2-2), formula (S3-1) For each of the sets of formulas (S3-2), an index value of variation in residual is calculated, and a set of formulas that minimize the index value is determined. Each pair is a pair having a different degree of polynomial, and the optimum degree of the polynomial is determined here. That is, at this time, the most accurate shape of the shot area SA in consideration of all the wafer mark points in the shot area SA is obtained. The index value may be a total of residuals, an average value, a standard deviation (σ or 3σ), or a sum of an average value and a standard deviation. There may be.

  In the next step 309, the number of samples of the wafer mark M in the shot area SA is reduced by a predetermined number. In this case, it is desirable to reduce the wafer marks M evenly in the shot area SA. In the next step 311, as in step 305, the shot shape function fitting is performed again with the remaining wafer marks, and in step 313, as in step 307, the variation in residuals in the function fitting is changed. An index value is calculated. In step 315, it is determined whether or not the index value of the variation in the residual exceeds a threshold value. If this determination is affirmed, the process proceeds to step 317, and if not, the process returns to step 309. In the present embodiment, the processes in steps 309 → 311 → 313 → 315 are repeated until this determination is affirmed.

  If the determination in step 315 is affirmed, the process proceeds to step 317. In step 317, among the number of samples whose residual index value is within a predetermined range, the minimum number of samples and arrangement are determined as the number of measurement points and arrangement of the shot area SA.

In the next step 319, it is determined whether or not the counter value i is equal to or greater than i _max . When i exceeds i _max , the order, coefficient, number of samples, and arrangement of the polynomial model are determined for all shot areas SA. If this determination is denied, the process proceeds to step 321; if the determination is affirmed, the process proceeds to step 323 in FIG. In step 321, the counter value i is incremented by 1, and the process returns to step 305. That is, until the determination in step 319 is affirmative (until appropriate orders, coefficients, sample numbers, and arrangements are determined in all shot areas SA), the processes in steps 305 to 321 are repeated.

  Proceeding to FIG. 6, in step 323, the shot areas SA are grouped by the degree of the polynomial. That is, the shot areas SA having the same optimal order determined in step 305 are grouped into the same group. In general, since adjacent shot areas SA tend to have similar shot shapes, adjacent shot areas SA often belong to the same group. In addition, for example, there may be a large difference in shot shape between the shot area SA near the center of the wafer W and the shot area SA at the outer periphery. Classified into groups.

  In the next step 325, it is determined whether or not further grouping is to be performed. If this determination is affirmed, the process proceeds to step 327. In step 327, the shot areas SA are further classified with the coefficients of the next terms approximated as the same group. Not only are the orders of the polynomials the same, but by this classification, the shot areas SA in which the coefficients of the terms are approximated belong to the same group.

  After the determination is negative in step 325 or after step 327 is executed, the process proceeds to step 331.

  In step 331, using the position information of the wafer mark M in each shot area SA measured in step 205, the arrangement of the shot areas SA on the wafer W is obtained by polynomial fitting. In this polynomial fitting, the above formulas (W1-1) to (W3-2) are used. Formula (W1-1), Formula (W1-2) set (first-order polynomial set), Formula (W2-1), Formula (W2-2) set (second-order polynomial set), Formula Polynomial fitting is performed on the set of (W3-1) and formula (W3-2) (the set of cubic polynomials) to determine the set of polynomials (that is, the order) having the smallest residual value index value. To do.

  In addition, when performing this shot arrangement polynomial fitting, it is necessary to consider the coefficients of the terms (ΔSX, ΔSY) included in the equations (W1-1) to (W3-2). For, the coefficients of the finally optimized polynomial are used as described above. However, in this polynomial fitting, the 0th order coefficients (Csx_00, Csy_00) representing the offset components of the shot area SA are not overlapped with the 0th order components of the above formulas (W1-1) to (W3-2). Don't include it to avoid it.

  In step 333, the exposure apparatus 100 obtains the degree of polynomial in each shot area SA, the number and arrangement of wafer mark samples to be measured, information on grouping, information on the order of polynomial in shot area arrangement, etc. (optimization information). Send to. After step 333 is completed, the process of step 207 is ended.

  After step 207 is completed (for a non-designated wafer W, after step 203 is completed), the wafer W is transferred to the exposure apparatus 100, and the exposure apparatus 100 performs the alignment process optimized in step 207. Wafer alignment with respect to the wafer W is performed using the method. More specifically, in this wafer alignment, the alignment system AS is used to measure the position information of the wafer mark M in the shot area SA according to the number of samples and the arrangement optimized for each shot area. Then, the shot shape polynomial fitting is performed with the specified degree polynomial, and the polynomial fitting of the array of the shot areas SA is also performed by combining the equations determined in the above step 207 (formula (W1-1), formula ( W1-2), Formula (W2-1), Formula (W2-2), Formula (W3-1), or Formula (W3-2)).

  Here, when the grouping of the coefficients of the polynomial in the shot area SA is performed, the shot shapes of the shot areas SA in the group can be regarded as substantially the same. A single shot area SA for measuring a plurality of wafer marks M (with an optimized number and arrangement of samples) may be used, or an arbitrary number smaller than the number of shots in the group. In this case, with respect to the shot area SA in which a plurality of wafer marks M are measured, the shot shape is obtained by polynomial fitting with an optimized order, and the shot shapes of other shot areas SA in the group are It can be considered that the shot shape is the same as that of the shot area SA.

  Based on the result of the wafer alignment, the wafer stage WST and the reticle stage are driven and a step-and-scan operation is performed to transfer the circuit pattern on the reticle R onto the exposed surface of the wafer W (step 209). ). At this time, since the shape of each shot area SA on the wafer W is known, in this step-and-scan operation, the projected image of the device pattern projected onto the wafer W is the shot area SA. Exposure is performed while the lens control system and the stage control system of the main controller 20 adjust the pattern image of the reticle so as to match the shape.

  In general, so-called alternate scanning is performed in the exposure of the step-and-scan operation. For example, after the wafer stage WST is scanned in the + Y direction to perform exposure on a certain shot area SA, this time, the scanning operation is performed in the −Y direction to perform exposure on the next shot area SA. In this case, the shot areas adjacent to each other in the X-axis direction are necessarily exposed sequentially by the X step operation, and when the shot area at the same Y position is completed, the next shot at another Y position is performed. The Y step operation is performed so that the area is exposed, and the shot areas adjacent in the X-axis direction are again exposed in order.

  However, in the present embodiment, the shot areas SA on the wafer W are grouped by the shot shape by prior measurement, and the lens of the projection optical system PL is driven by the lens control system of the main controller 20, etc. Exposure is performed while matching the shape of the image of the device pattern to the shot shape of the shot area SA. In general, the lens drive speed response of the projection optical system PL is often lower than that of the stage. For example, when the shapes of shot areas SA that are continuously exposed differ significantly, depending on the degree of lens drive speed response, it may be necessary to add a waiting time to stage drive until the lens drive settling time has elapsed. There is.

  In such a case, the exposure order of the shot areas SA on the wafer W may be changed according to the result of grouping the shot areas SA. For example, when the shot area SA near the center of the wafer W and the shot area SA on the outer periphery of the wafer W are remarkably different in shape and classified into different groups, the shot area at the center of the wafer W The SA exposure may be performed first, and then the shot area SA on the outer periphery of the wafer W may be exposed.

  After the exposure is completed, the wafer W is transferred to the C / D 110 and developed by the C / D 110 (step 211).

  The processes in the next steps 213 and 215 are executed only for the wafer W designated by the host 600. An overlay error between the resist image and the device pattern of the reference layer (a relative displacement amount of the overlay error measurement mark at each point in the shot area SA) is measured by the measurement / inspection instrument 120 (post-measurement inspection) Processing, step 213). In response to a transfer request from the analysis device 500, the measurement result (overlay error data) of the measurement / inspection instrument 120 is sent to the analysis device 500. Further, in response to a transfer request from the analysis apparatus 500, data such as apparatus parameter setting values of the exposure apparatus 100 or the measurement / inspection instrument 120 is sent to the analysis apparatus 500.

  Based on the data sent from the exposure apparatus 100 or the measurement / inspection instrument 120, the analysis apparatus 500 analyzes the post-measurement / inspection result (step 215). Here, it is assumed that the analysis apparatus 500 has acquired apparatus parameter data sent from the exposure apparatus 100 and the measurement / inspection instrument 120.

  In step 215, as shown in FIG. 7, first, in step 401, overlay error measurement data for each shot area SA measured and inspected in step 213 is acquired from the measurement / inspection instrument 120. In the next step 403, an index value for variation in overlay error within the group is calculated. Then, in the next step 405, it is determined whether or not the index value of the variation is larger than the threshold value. If the determination is affirmative, the reference for optimization of the alignment process is adjusted.

  Here, when the index value of the variation in the measurement result of the overlay error of the shot areas SA belonging to the same group is larger than the threshold value, the grouping reference is adjusted. Then, regrouping is performed based on the adjusted standard. Further, for each group, the number of measurement points and arrangement of the wafer mark M in the shot area SA for obtaining the shot shape, and optimization of the polynomial model are performed. For example, the overlay error measurement data in the shot area SA is subjected to polynomial fitting, and the obtained coefficients of the polynomial are added as offsets of the coefficients of the above equations (S1-1) to (S3-2). Can do. In this way, the overlay error of the wafer W to be processed later is reduced.

  Here, a plurality of threshold values for the index value of the overlay error variation may be provided, and the processing may be flexibly changed according to the magnitude relationship between the index value and a plurality of different threshold values. For example, when there are a threshold value A and a threshold value B (A <B) and the index value is between A and B, each of the above formulas (S1-1) to (S3-2) Only the offset of the coefficient is obtained, and when the index value exceeds B, the grouping standard can be adjusted.

  As a result of the analysis, the analysis apparatus 500 sends data (analysis information) regarding the analysis result to the measurement / inspection instrument 120 and the exposure apparatus 100 as necessary. The exposure apparatus 100 or the measurement / inspection instrument 120 performs processing such as updating the apparatus parameters as necessary based on the information.

  Thereafter, in step 207 performed on the subsequent wafer W, the alignment processing method is optimized under the adjusted grouping standard.

  On the other hand, the wafer W is transferred from the measurement / inspection instrument 120 to the device manufacturing processing apparatus group 900. Etching is performed in the etching apparatus 920, impurity diffusion, wiring processing, film formation in the CVD apparatus 910, planarization in the CMP apparatus 930, ion implantation in the oxidation / ion implantation apparatus 940, and the like are performed as necessary ( Step 217). Then, the host 600 determines whether all processes are completed and all patterns are formed on the wafer W (step 219). If this determination is denied, the process returns to step 201, and if affirmed, the process proceeds to step 221. In this manner, a series of processes such as film formation / resist application to etching are repeatedly performed for the number of steps, whereby circuit patterns are stacked on the wafer W, and a semiconductor device is formed.

  After the repetition process is completed, the probing process (step 221) and the repair process (step 223) are executed in the device manufacturing processing apparatus group 900. If a defect is detected in step 221, for example, in step 223, a process of replacing with a redundant circuit is performed. The analysis apparatus 500 can also send information such as the detected location where the overlay abnormality has occurred to an apparatus that performs the probing process and the repair process. In the inspection apparatus (not shown), the portion where the line width abnormality has occurred on the wafer W can be excluded from the processing target for the probing process and the repair process in units of chips. Thereafter, a dicing process (step 225), a packaging process, and a bonding process (step 227) are executed, and a product chip is finally completed. The post-measurement inspection process in step 213 and the analysis process in step 215 may be performed after the etching in step 217. In this case, the overlay error is measured on the etching image of the wafer.

  As described above, according to the device manufacturing system according to the present embodiment, in an iterative process in lot processing, an abnormality in overlay, that is, deterioration in overlay accuracy is detected, and the abnormality is resolved ( In order to improve the overlay accuracy), the analysis apparatus 500 adjusts the standard for optimizing the wafer alignment-related processing of the exposure apparatus 100 or the measurement / inspection instrument 120, and the adjustment result is quickly obtained. And can be reflected in the measurement / inspection instrument 120. Since this adjustment can be performed without stopping the lot processing, the device yield does not decrease.

  As described above in detail, according to the present embodiment, the wafer used in step 209 prior to the overlay transfer of the device pattern image on the reticle R and the pattern area SA on the wafer W in step 207. The method for acquiring the shape information of each of the plurality of shot areas SA on W is optimized. Thereby, in step 209, it is possible to acquire the shape information of each of the plurality of pattern areas on the wafer W at the time of overlay transfer with high accuracy and high throughput by using the optimized acquisition method. It becomes.

  Further, according to the present embodiment, after overlay transfer in step 209, the overlay error of the device pattern on the reticle R with respect to the pattern area SA on the wafer W is measured (step 213). Then, based on the measurement result of the overlay error, the analysis apparatus 500 adjusts the alignment process optimization standard (step 215). In this way, it is possible to optimize the alignment process according to the actual exposure result.

  Further, according to the present embodiment, the position information of all the wafer marks M arranged in each shot area SA on the wafer W is measured before overlay transfer in the exposure apparatus 100 (step 205). Then, based on the combination of positional information of each wafer mark M with various sample numbers and arrangements, the shot shape of the shot area SA is calculated by polynomial fitting (step 305). Further, the shot shape of the shot area SA calculated based on the position information of all the wafer marks M, and the shot shape of the shot area SA calculated under the number of samples and arrangement different from the total number of wafer marks M, respectively. Are compared (step 315), and the minimum number of samples and arrangement within which the difference falls within a predetermined range are determined as the optimum alignment processing conditions (step 317). In this way, since the number of samples of the wafer mark M on the wafer W in actual wafer alignment can be reduced, high-accuracy and high-throughput exposure can be realized.

  According to the present embodiment, in step 207, a plurality of shot areas SA are grouped based on the shot shape of each shot area SA determined in step 317 (step 323). Further, at least a part of the method for acquiring the shot shape of the shot area SA included in the same group is further shared (step 327).

  Further, in the present embodiment, it is possible to determine the exposure order of the shot areas SA to be overlaid based on the result of grouping the shot areas SA on the wafer W. In this way, before exposure, the shot areas SA on the wafer W are grouped by the shot shape, and the grouping result is used for wafer alignment, exposure, or subsequent processing (for example, measurement inspection of the wafer W). If used, the exposure process can be performed with high throughput and high accuracy. In addition, when the exposure apparatus is an apparatus that performs multiple exposure using a plurality of exposure reticles, a plurality of different wafer marks arranged in the shot area SA on the wafer W for each exposure reticle before the exposure. It is assumed that the position information of M is measured, the shot areas SA are grouped individually for each reticle, and overlay transfer is performed based on the grouping result. This makes it possible to select an optimum wafer mark and optimize the shot shape for each exposure reticle. In addition, it is desirable that the shot shape can be corrected for each reticle during multiple exposure. The multiple exposure may be simultaneous multiple exposure in which a plurality of reticle-like patterns are simultaneously transferred onto the wafer W, or individual multiple exposure in which individual patterns are individually transferred.

  Also, according to the present embodiment, in step 305, a polynomial model having a shot shape is calculated by polynomial fitting using positional information of a plurality of wafer marks, and in step 323, the order of the polynomial model, the coefficients, and the wafer for the polynomial model are calculated. A plurality of shot areas SA are grouped based on at least one of the residuals of the position information of the mark M. For the shot areas SA in the group, at least a part of the method for obtaining the shape information of each shot area SA (for example, the order of the polynomial model, the coefficient, etc.) is shared among the wafers W (steps 323 and 327). ).

  According to the above embodiment, all the components included in the shape information of each shot area SA (coefficients of terms of linear components (primary components) and coefficients of terms of nonlinear components (second-order or higher components)) Is shared among the shot areas SA. However, the part to be shared may be a part. For example, only non-linear components (second-order or higher term coefficients) of the shot area SA included in the shape information of each shot area SA can be shared between the wafers W.

  Note that, according to the above-described embodiment, the method for obtaining the shape of the shot area SA is optimized only for the wafer W designated in advance among the plurality of wafers. Since the arrangement of the shot area SA on the wafer W to be processed and the shape of the shot area SA are often approximated, the method for obtaining the optimization is performed for the designated wafer. For the wafer W to be processed in this manner, the method for obtaining the wafer W may be followed as it is.

  In this embodiment, steps 205, 207, 213, and 215 are performed for each designated wafer W. In this case, for example, these steps may be performed every several sheets or at regular time intervals (every hour, every day, every week, etc.). This interval (interval) may be fixed or variable. When the abnormality in the measurement result of the overlay error in step 213 is not continuously detected, the interval for performing these steps may be lengthened. That is, the interval for designating the wafer W as an optimization target is lengthened or shortened depending on whether or not the variation in the shape information of each shot area SA obtained in step 207 is within a predetermined range across the plurality of wafers W. You can do it.

  Steps 213 and 215 may be performed for each wafer W. For example, if an overlay error is detected, the alignment processing method may be optimized using the next wafer W as a designated wafer. That is, when the overlay accuracy is stable based on the history of past overlay errors, the interval for designating the wafer W is lengthened, the overlay abnormality is detected, and the overlay accuracy deteriorates. The interval for designating the wafer W can be shortened.

  For example, normally, when only the wafer W at the head of the lot is subjected to the measurement of the overlay error in the measurement / inspection instrument 120, and it is determined that the overlay accuracy has deteriorated based on the actual measurement value, steps 205, 207, 213 and 215 are executed. Thereafter, the overlay error is measured for each wafer W, and if no overlay abnormality is detected continuously, the wafer W is placed in such a manner that 3 wafers are placed → 10 wafers are placed → only the first wafer in the lot. You can make the specified interval longer.

  According to the present embodiment, the exposure apparatus 100 employs EGA alignment. In the EGA alignment, a residual component between the EGA correction amount of the shot area in the EGA model and the actually measured position is calculated so as to be minimized over the plurality of wafers W. This is because this value is the most appropriate parameter setting value from a statistical viewpoint. However, the present invention is not limited to the statistical global alignment method, but can be applied to, for example, die-by-die alignment.

  Further, according to the present embodiment, the analysis device 500 is a computer, and the analysis function is realized by a program that causes the computer to execute the analysis function. Since this program is downloaded from the Internet or installed from a state recorded on an information recording medium such as a CD-ROM, the analysis function itself can be easily added, changed, or modified.

  In the device manufacturing processing system 1000, the analysis apparatus 500 is a separate apparatus independent of various device manufacturing processing apparatuses, but the present invention is not limited to this. For example, an analysis function of the analysis apparatus 500 may be provided in any device manufacturing processing apparatus in the system. For example, the analysis function may be provided in the measurement / inspection instrument 120, the exposure apparatus 100, the host 600, the management controller 160, or the like.

  In this embodiment, the measurement / inspection instrument 120 is connected inline with the exposure apparatus 100 or the like. However, the measurement / inspection instrument 120 is an offline measurement apparatus that is not connected inline with the exposure apparatus 100 or the track 200. It may be as described above. Further, the measurement / inspection instrument 120 may be provided in the exposure apparatus 100. In addition, the measurement / inspection instrument that performs the measurement / inspection when performing the alignment process optimization process and the measurement / inspection instrument that performs the post-measurement / inspection process may be provided separately. It may be. However, if both are performed with the same measurement / inspection instrument, it is not necessary to consider the matching of the apparatus, so that the accuracy of the reference adjustment for optimization can be improved.

  The same can be said for the case where the measurement / inspection instrument 120 includes two processing units (processing units 1 and 2). That is, when the processing unit 1 performs the measurement inspection when performing the alignment processing method optimization processing, it is desirable that the processing unit 1 performs the post-measurement inspection processing of the wafer W.

  In the present embodiment, the exposure apparatus 100 is a step-and-scan type exposure apparatus, but is not limited thereto, and may be a step-and-repeat type or other type of exposure apparatus. As represented by this, the various apparatuses are not limited to those types. The present invention is not limited to a semiconductor manufacturing process, and can be applied to a manufacturing process of a display including a liquid crystal display element. In addition to the process of transferring the device pattern onto the glass plate, the manufacturing process of the thin film magnetic head, and the manufacturing process of the imaging device (CCD, etc.), micromachine, organic EL, DNA chip, etc. Of course, the present invention can be applied to management.

  In the above embodiment, the analysis apparatus 500 is a personal computer, for example. That is, the analysis processing in the analysis apparatus 500 is realized by executing an analysis program on a PC. As described above, the analysis program may be installable on the PC via the medium as described above, or may be downloaded to the PC via the Internet or the like. Of course, the analysis apparatus 500 may be configured by hardware.

  The present invention is applicable not only to the device manufacturing processing apparatus described above, but also to any apparatus that aligns an object.

  As described above, the exposure method, exposure apparatus, measurement method, and measurement apparatus of the present invention are suitable for manufacturing a device.

It is the schematic which shows the structure of the device manufacturing processing system which concerns on one Embodiment of this invention. It is the schematic which shows the structure of the exposure apparatus which concerns on one Embodiment of this invention. FIG. 3A is a diagram showing an example of a shot arrangement on a wafer, and FIG. 3B is a diagram showing an example of a wafer mark in a shot area. It is a flowchart of a series of processes of a device manufacturing process. It is a flowchart (the 1) of the optimization process of alignment conditions. It is a flowchart (the 2) of the optimization process of alignment conditions. It is a flowchart of an analysis process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Illumination system, 100 ... Exposure apparatus, 110 ... C / D, 120 ... Measurement inspection device, 160 ... Management controller, 500 ... Analysis apparatus, 600 ... Host system, 900 ... Device manufacturing processing apparatus group, 910 ... CVD apparatus, 920 ... Etching apparatus, 930 ... CMP apparatus, 940 ... Oxidation / ion implantation apparatus, IA ... Exposure area, IAR ... Illumination area, IL ... Exposure light, M ... Wafer mark, PL ... Projection optical system, SA ... Shot area, W ... wafer, WH ... wafer holder, WST ... wafer stage.

Claims (16)

An exposure method for superimposing and transferring an image of a predetermined pattern on each of a plurality of pattern areas on a substrate,
The shape information of the pattern area is calculated based on the position information of the mark in the first sub-process for measuring the position information of the plurality of marks arranged in each pattern area and the plurality of different samples and arrangements. The second sub-process, the shape information of the pattern area calculated based on the position information of the plurality of marks, and the number of samples and the arrangement different from the number of the plurality of marks in the first sub-process A third sub-process for comparing the difference between the calculated shape information of each pattern region and determining the number of samples and the arrangement within which the difference is within a predetermined range as an optimum acquisition method, An optimization step of optimizing a method for acquiring shape information of each of the plurality of pattern areas on the substrate prior to the overlay transfer of the image of the pattern and each of the pattern areas;
An acquisition method comprising: using the optimized acquisition method, acquiring shape information of each of a plurality of pattern regions on the substrate during the overlay transfer. After the overlay transfer,
A measuring step of measuring an overlay error of a predetermined pattern with respect to each pattern region;
The exposure method according to claim 1, further comprising: an adjustment step of adjusting an optimization standard of the acquisition method in the optimization step based on a measurement result in the measurement step. The optimization process includes:
A fourth sub-process for grouping the plurality of pattern areas based on the shape information of the pattern areas calculated in the second sub-process;
The exposure method according to claim 1 , further comprising: a fifth sub-step for sharing at least a part of a method for acquiring shape information of pattern areas included in the same group. The optimization process includes:
A fourth sub-process for grouping the plurality of pattern areas based on the shape information of the pattern areas calculated in the second sub-process;
2. The exposure method according to claim 1 , further comprising: a fifth sub-process for determining an order of the pattern areas to be overlaid based on a result of grouping the plurality of pattern areas. . In the second sub-step,
Calculate a polynomial model obtained by polynomial fitting using the position information of the plurality of marks,
In the fourth sub-process,
Order of the polynomial model, coefficients and based on at least one residual positional information of the mark with respect to the polynomial model, according to claim 3 or 4, wherein the grouping the plurality of pattern regions Exposure method. When variation in shape information of each shot area calculated in the second sub-process is within a predetermined range across a plurality of substrates,
At least a portion of the acquisition method of the shape information of each shot area, an exposure method according to any one of claims 1 to 4, further comprising a acquisition method common step of common between substrates . In the acquisition method standardization step,
The exposure method according to claim 6 , wherein a method for acquiring a nonlinear component of the shot area included in the shape information of each shot area is shared between the substrates.   2. The exposure method according to claim 1, wherein the optimization step is performed only on a predetermined substrate among a plurality of substrates. Variation of the second said shape information of each shot area calculated in sub-step, if it is within a predetermined range across the substrate, claim, characterized in that increase or decrease the interval specifying the substrate 8 An exposure method according to 1. A measurement method for measuring shape information of each of a plurality of pattern regions on a substrate,
The shape information of the pattern area is calculated based on the position information of the mark in the first sub-process for measuring the position information of the plurality of marks arranged in each pattern area and the plurality of different samples and arrangements. The second sub-process, the shape information of the pattern area calculated based on the position information of the plurality of marks, and the number of samples and the arrangement different from the number of the plurality of marks in the first sub-process A third sub-process that compares the difference between the calculated shape information of each pattern region and determines the number of samples and the arrangement in which the difference falls within a predetermined range as an optimal acquisition method, An optimization step of optimizing a method for obtaining shape information of each of the plurality of pattern areas on the substrate prior to the overlay transfer of the pattern image and each pattern area;
Under the optimized acquisition method, an acquisition step of acquiring shape information of each of a plurality of pattern regions on the substrate during the overlay transfer. After the overlay transfer,
A measuring step of measuring an overlay error of a predetermined pattern with respect to each pattern region;
The measurement method according to claim 10 , further comprising: an adjustment step of adjusting a reference for optimization of an acquisition condition in the optimization step based on a measurement result in the measurement step. The optimization process includes:
A fourth sub-process for grouping the plurality of pattern areas based on the shape information of the pattern areas calculated in the second sub-process;
The measurement method according to claim 10 , further comprising: a fifth sub-process for sharing at least a part of a method for acquiring shape information of pattern areas included in the same group. In the first sub-step,
For each exposure reticle used for multiple exposure, measure position information of a plurality of different marks arranged in each pattern area,
In the fourth sub-process,
Grouping the plurality of pattern areas individually for the exposure reticle;
4. The exposure method according to claim 3 , wherein overlay transfer is performed based on the grouping result. An exposure apparatus that performs multiple exposure using the exposure method according to claim 13 . In the first sub-step,
13. The measurement method according to claim 12 , wherein position information of a plurality of different marks arranged in each pattern region is measured for each exposure reticle used for multiple exposure. A measurement apparatus that performs multiple exposure using the measurement method according to claim 15 .

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