JP4973488B2 - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure in which a wiring substrate is hardly detached from a supporting pole by suppressing the loosing of a screw for fixing the wiring substrate to have high reliability. <P>SOLUTION: This semiconductor device 1 includes: at least one semiconductor element housed in a resin case 20; a plurality of supporting poles 40 fixed to the resin case 20; and a wiring substrate 50 supported by being screwed in the supporting poles 40, and includes a structure in which the supporting poles 40 penetrating the substrate 50 and the substrate 50 are engaged with each other. Such an engaging is performed by a convex portion 40aa formed on a side face of the supporting pole 40 penetrating the substrate 50 and a concave portion 50a formed in the wiring substrate 50. By a semiconductor device 1 having such a structure, the loosing of a screw 60 for fixing the substrate 50 is suppressed, so that a semiconductor device having high reliability is achieved. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a semiconductor element is enclosed in a resin case.

Inverter devices, uninterruptible power supply devices, machine tools, industrial robots, etc., a semiconductor device (general-purpose module) in which a power semiconductor element is enclosed (packaged) in a resin case is used independently of the main body device. Yes. In many cases, a wiring board represented by a printed board or the like is attached to such a semiconductor device (for example, Patent Documents 1 and 2).
JP 2006-093255 A (FIG. 4) JP 2001-036003 A (FIG. 3)

However, in the semiconductor device having the above-described structure, the wiring board is directly attached to the support provided on the resin case by screwing.
In a semiconductor device equipped with a power semiconductor element, a temperature cycle is generated by operating or stopping the semiconductor device.

Therefore, the semiconductor device having the above-described structure has a problem that when the wiring board expands or contracts in a temperature cycle, a screw used for screwing loosens.
In addition, when such looseness occurs, disconnection occurs between the wiring board and the terminal, deterioration of circuits and elements disposed on the wiring board progresses, and the semiconductor device cannot be used for a long time. There was a problem.

  The present invention has been made in view of the above points, and provides a highly reliable semiconductor device having a structure in which loosening of a screw for fixing a wiring board is suppressed and the wiring board does not easily come off from the support column. For the purpose.

In order to solve the above problems, according to one aspect of the present invention, at least one semiconductor element enclosed in a resin case, a plurality of columns fixed to the resin case, and supported by screws to the columns. A semiconductor device characterized in that a convex portion formed on a side surface of the support column penetrating into the wiring substrate and a concave portion formed in the wiring substrate are fitted. Is done.

In one aspect of the present invention, at least one semiconductor element enclosed in a resin case, a plurality of support posts fixed to the resin case, and a wiring board supported by screwing to the support posts, wherein the portion of the side surface of said strut which penetrates the wiring substrate is in contact with the wiring board, the other portion is spaced apart from the wiring board side, the convex portion formed on a part of the side surface And a recess formed in the wiring board are fitted to each other .

In one aspect of the present invention, at least one semiconductor element enclosed in a resin case, a plurality of support posts fixed to the resin case, and a wiring board supported by screwing to the support posts, The wiring board is provided with a first through hole and a second through hole that communicates with the first through hole and extends with a predetermined width in a direction away from the first through hole. The support column includes a first portion fixed to the resin case and a second portion opposite to the first portion, and the second portion is inserted into the second through-hole, The size of the through hole is larger than the outer diameter of the second portion, and the predetermined width of the second through hole is the same as the outer diameter or a length of 1 mm or less to the outer diameter. There is provided a semiconductor device characterized by being the same as that to which the above is added .

  According to the above means, the loosening of the screw for fixing the wiring board is suppressed, and a semiconductor device having a structure in which the wiring board is hardly detached from the support is realized. Thereby, a highly reliable semiconductor device is realized.

Hereinafter, a semiconductor device according to the present embodiment will be described in detail with reference to the drawings.
<First Embodiment>
FIG. 1 is a schematic diagram of a main part of the semiconductor device according to the first embodiment. Here, FIG. 1A illustrates a schematic plan view of a semiconductor device, and FIG. 1B displays an enlarged view of a cross section at a position along the broken line XY in FIG. Has been. In FIG. 1, for example, a semiconductor module (power module) including an inverter circuit, a chopper circuit, and the like is illustrated.

  The illustrated semiconductor device 1 uses a metal base plate 10 having a thickness of several millimeters as a base, and an IGBT (Insulated Gate Bipolar Transistor) that is a power semiconductor element on a circuit pattern (not shown) formed on the metal base plate 10. A plurality of elements, FWD (Free Wheeling Diode) elements, and the like are mounted (not shown). The semiconductor device 1 is further provided with a wiring pattern, wiring terminals, and the like, and the circuit is configured (not shown). Furthermore, the semiconductor device 1 packages the above-described power semiconductor element and the like with a resin case 20.

  Here, the resin case 20 is, for example, a resin made of PPS (polyphenylene sulfide), and is fixed to the upper end edge of the metal base plate 10. Then, on the outer frame of the resin case 20, for example, external connection terminals 30a and 30b that are electrically connected to the main electrode of the IGBT element are insert-molded. Such external connection terminals 30a and 30b are made of, for example, a material mainly composed of copper (Cu), aluminum (Al), or an alloy thereof.

  A support column 40 is provided in the outer frame of the resin case 20. For example, the column 40 is installed in the outer frame by penetrating a part of the lower part 40 b of the column 40 into the outer frame of the resin case 20.

  In the semiconductor device 1, a wiring board (printed board) 50 is attached to the support column 40. For example, the upper portion 40a of the support column 40 is penetrated through the wiring substrate 50, and the lower surface of the wiring substrate 50 is brought into contact with the upper end of the lower portion 40b of the support column 40. The wiring board 50 is fixed and supported on the support column 40 by screwing with the screw 60.

Further, in the semiconductor device 1, in addition to the above-described screwing, the upper portion 40a of the support column 40 and the wiring board 50 are fitted.
Such fitting is performed, for example, by causing the convex portion 40aa formed on the side surface of the upper portion 40a of the support column 40 and the concave portion 50a provided in the wiring board 50 to collide with each other, and the convex portion 40aa and the concave portion 50a It is carried out by contacting.

That is, in the semiconductor device 1, the wiring substrate 50 is attached to the support column 40 by screwing and is attached to the support column 40 by the above-described fitting.
In addition, in FIG.1 (b), although the thing of a reverse V shape is illustrated as a cross-sectional shape of convex part 40aa, such a cross-sectional shape is not restricted to a reverse V shape. For example, the cross-sectional shape may be an inverted W shape or a square shape. Alternatively, the surface of the upper portion 40a of the support column 40 may be subjected to iris knurl processing.

  Further, a circuit or the like for controlling the IGBT element or the like is formed on the main surface of the wiring board 50 (not shown). For example, an IC circuit part, a capacitor part, a resistance part, and the like are mounted on the main surface of the wiring board 50.

  Further, the position and the number of the support columns 40 are not limited to the configuration shown in FIG. 1, and the support columns 40 may be installed in the internal region of the semiconductor device 1 as necessary. The support column 40 may be disposed on the resin case 20.

Further, a washer 61 may be sandwiched between the screw 60 and the support column 40 as shown in the figure.
In the semiconductor device 1, a plurality of pin terminals (control terminals) 70 that are connected to the control electrode of the IGBT element are installed under the wiring board 50. The pin terminal 70 penetrates the wiring board 50 and is electrically connected to a circuit provided on the main surface of the wiring board 50 by soldering.

  In the semiconductor device 1, for example, a gel or an epoxy resin is used in the space surrounded by the resin case 20 and the metal base plate 10 for the purpose of protecting the semiconductor element and the metal wire connected to the semiconductor element. A sealing resin as a main component is filled (not shown).

  As described above, in the semiconductor device 1, the wiring board 50 can be attached to the support column 40 by the above-described fitting and screwing with the screw 60. Further, since the upper portion 40a of the support column 40 and the wiring board 50 are fitted, a structure in which the stress due to the expansion / contraction of the wiring board 50 is not directly transmitted to the screw 60 even if a temperature cycle occurs in the semiconductor device 1. It has become. Therefore, even if the wiring board 50 expands and contracts, the semiconductor device 1 has a structure in which the screw 60 is difficult to loosen.

  As a result, the wiring board 50 is firmly fixed to the support column 40, and the disconnection between the wiring board 50 and the pin terminal 70 as described above is suppressed. In addition, deterioration of circuits, semiconductor elements and the like disposed on the wiring board 50 is suppressed. Thereby, the semiconductor device 1 can be used over a long period of time.

  Even if the semiconductor device 1 is subjected to vibration, impact, or the like from the outside, and the screw 60 is separated from the support column 40, the wiring substrate 50 is connected to the upper portion 40a of the support column 40. There is no separation from 40.

  In the semiconductor device 1, since the wiring board 50 can be fitted to the upper part 40 a of the support 40 before the wiring board 50 is screwed to the support 40, the wiring board 50 can be easily attached and positioned. .

Further, the number of wiring boards 50 attached to the support column 40 is not particularly limited to one, and a plurality of wiring boards 50 may be attached to the support column 40 with a predetermined interval.
Further, when wiring patterns are provided on the upper and lower main surfaces of the wiring board 50, or when a plurality of wiring boards 50 are provided on the support 40, the material of the support 40 is made of metal such as copper (Cu), for example. It is good. When the support 40 made of such a material is provided, the support 40 is arranged on the upper and lower main surfaces of the wiring board 50 or the wiring patterns provided on the main surfaces of the respective wiring boards 50. A via electrode can also be used.

  The semiconductor element arranged in the semiconductor device 1 is not limited to the IGBT element described above, and a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) may be arranged.

  Next, a modified form of the semiconductor device 1 will be described. In all the drawings shown below, the same members as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

<Second Embodiment>
FIG. 2 is a schematic diagram of a main part of a semiconductor device according to the second embodiment. Here, FIG. 2A illustrates a schematic plan view of the periphery of the pillar provided in the semiconductor device 2, and FIG. 2B illustrates a position along the broken line XY in FIG. A cross-sectional view at is displayed. In FIG. 2A, the screw 60 and the washer 61 shown in FIG. 2B are not displayed.

The semiconductor device 2 according to the second embodiment has the same structure as the semiconductor device 1. However, the form of the peripheral part of the support | pillar 41 provided in the outer frame of the said resin case 20 is changed.
As shown in the drawing, a part of the lower portion 41 b of the support column 41 is provided through the outer frame of the resin case 20. And the upper part 41a of the support | pillar 41 is penetrated to the wiring board 50, and the lower surface of the wiring board 50 is made to contact the upper end of the lower part 41b of the said support | pillar 41. Further, the wiring board 50 is fixed and supported on the support column 41 by screwing with a screw 60.

  However, in the semiconductor device 2 according to the second embodiment, for example, two holes 50b are provided in the wiring substrate 50 in the vicinity of the support column 41, and the wiring substrate 50 is partially formed on the upper portion 41a of the support column 41. A part is in contact.

  That is, in the semiconductor device 2, a part of the wiring board 50 is brought into contact with a part of the upper portion 41 a of the support 41 and the wiring board 50 is attached to the support 41 by screwing with the screw 60.

  With such a structure, as described above, even if the wiring substrate 50 expands and contracts, the stress generated by the expansion and contraction is relieved at the contact portion. In addition, since a part of the wiring board 50 is brought into contact with a part of the upper portion 41 a of the support column 41, the stress is not directly transmitted to the screw 60. Therefore, the semiconductor device 2 has a structure in which the screw 60 is not easily loosened even when the wiring substrate 50 is expanded or contracted.

  As a result, the disconnection between the wiring board 50 and the pin terminal 70 as described above is suppressed. In addition, deterioration of circuits, semiconductor elements and the like disposed on the wiring board 50 is suppressed. Thereby, the semiconductor device 2 can be used over a long period of time.

Moreover, the form of the wiring board 50 in the peripheral portion of the support column 41 is not limited to the configuration shown in FIG. 2, and the form may be modified as necessary.
For example, FIG. 3 and FIG. 4 show an example in which the second embodiment is modified.

First, as shown in FIG. 3A, three holes 50b are provided in the wiring board 50 in the vicinity of the column 41, and a part of the wiring substrate 50 is brought into contact with a part of the upper part 41a of the column 41. Also good.
Further, as shown in FIG. 3B, four holes 50 b are provided in the wiring board 50 in the vicinity of the column 41, and a part of the wiring substrate 50 is brought into contact with a part of the upper part 41 a of the column 41. Also good.

  As described above, in the semiconductor device 2, a part of the wiring board 50 and a part of the upper portion 41 a of the support column 41 are brought into contact with each other at two to four locations, and the wiring board 50 is screwed with the screw 60. Is attached to the column 41. As described above, the semiconductor device 2 has a structure in which the screw 60 is difficult to loosen even when the wiring substrate 50 expands and contracts.

Also, as shown in FIG. 4, in the semiconductor device 2, the above-described support column 40 may be used instead of the support column 41.
With such a structure, the wiring board 50 can be attached to the support column 40 by the above-described fitting and screwing with the screw 60. Therefore, in the semiconductor device 2 illustrated in FIG. 4, in addition to the above effects, the screw 60 has a structure that is more difficult to loosen.

<Third Embodiment>
5 and 6 are schematic views of the main part of the semiconductor device according to the third embodiment. Here, each figure (a) illustrates a schematic plan view of the periphery of the pillar provided in the semiconductor device 3, and (b) is a position along the broken line XY in FIG. (A). A cross-sectional view at is displayed.

The semiconductor device 3 according to the third embodiment has the same structure as the semiconductor device 1. However, the form of the peripheral part of the support | pillar 41 provided in the outer frame of the said resin case 20 is changed.
As shown in FIG. 5, a part of the lower portion 41 b of the support column 41 is provided through the outer frame of the resin case 20. And the upper part 41a of the support | pillar 41 is penetrated to the wiring board 50, and the lower surface of the wiring board 50 is made to contact the upper end of the lower part 41b of the said support | pillar 41. Further, the wiring board 50 is fixed and supported on the support column 41 by screwing with the screw 60.

  However, in the semiconductor device 3 according to the third embodiment, the wiring substrate 50 in the vicinity of the support column 41 is provided with, for example, through holes 50c and 50d that communicate with each other. Further, the diameter of the through hole 50 c is larger than the outer diameter of the upper portion 41 a of the support column 41, and the width in the short direction of the through hole 50 d is configured to be the same as the outer diameter of the upper portion 41 a of the support column 41. For example, a clearance of 1 mm or less may be provided between the through hole 50d and the upper portion 41a of the support column 41.

  And when attaching the wiring board 50 to the support | pillar 41, as shown in FIG. 5, the upper part 41a of the support | pillar 41 penetrates into the through-hole 50c of the wiring board 50, and the lower surface of the wiring board 50 is made into the lower part 41b of the support | pillar 41. After contacting the upper end, the wiring board 50 is moved in the direction of the arrow shown in the figure. By such movement, the upper portion 41a of the support column 41 penetrates into the through hole 50d of the wiring board 50 as shown in FIG. Then, the wiring board 50 is attached to the pillar 41 by screwing with the screw 60 in a state where the upper portion 41 a of the pillar 41 is inserted into the through hole 50 d of the wiring board 50.

As described above, in the semiconductor device 3, a part of the wiring board 50 is brought into contact with a part of the upper portion 41 a of the support column 41 and attached to the support column 41 by screwing with the screw 60.
With such a structure, as described above, even if the wiring substrate 50 expands and contracts, the stress generated by the expansion and contraction is relieved at the contact portion described above. Further, since the upper portion 41 a of the support column 41 is penetrated into the through hole 50 d of the wiring board 50, the stress is not directly transmitted to the screw 60. Therefore, the semiconductor device 3 has a structure in which the screw 60 is not easily loosened even when the wiring substrate 50 is expanded or contracted.

  As a result, the disconnection between the wiring board 50 and the pin terminal 70 as described above is suppressed. In addition, deterioration of circuits, semiconductor elements and the like disposed on the wiring board 50 is suppressed. Thereby, the semiconductor device 3 can be used over a long period of time.

  In particular, when the wiring board 50 has a multilayer wiring structure, when a load (for example, frictional force due to penetration) is applied in the thickness direction of the wiring board 50, each layer of the wiring board 50 is peeled off. Get up often.

  However, in the semiconductor device 3, the upper portion 41 a of the support column 41 can be inserted into the through hole 50 c of the wiring board 50 in a non-contact manner. In addition, after the penetration, the wiring board 50 can be moved in the lateral direction, and the upper portion 41 a of the support column 41 can be penetrated into the through hole 50 d of the wiring board 50.

Therefore, in the semiconductor device 3, no load is applied in the thickness direction when the wiring board 50 is mounted. As a result, the semiconductor device 3 has a structure in which the above-described peeling hardly occurs.
FIG. 7 shows an example in which the third embodiment is modified. Here, FIG. 1A illustrates a schematic plan view of the periphery of a support provided in the semiconductor device 4, and FIG. 2B illustrates a cross-section at a position along the broken line XY in FIG. The figure is displayed.

As shown in the figure, in the semiconductor device 4, the above-described support column 40 is used instead of the support column 41.
With such a structure, the wiring board 50 can be attached to the support column 40 by the above-described fitting and screwing with the screw 60. Therefore, the semiconductor device 4 illustrated in FIG. 7 has a structure in which the screw 60 is more difficult to loosen in addition to the above effects.

  It should be noted that the first to third embodiments are not independent embodiments. A plurality of embodiments of the first to third embodiments may be combined as necessary.

It is a principal part schematic diagram of the semiconductor device which concerns on 1st Embodiment. It is a principal part schematic diagram of the semiconductor device which concerns on 2nd Embodiment. It is a principal part schematic diagram of the semiconductor device which concerns on the modification of 2nd Embodiment (the 1). It is a principal part schematic diagram of the semiconductor device which concerns on the modification of 2nd Embodiment (the 2). It is a principal part schematic diagram of the semiconductor device which concerns on 3rd Embodiment (the 1). It is a principal part schematic diagram of the semiconductor device which concerns on 3rd Embodiment (the 2). It is a principal part schematic diagram of the semiconductor device which concerns on the modification of 3rd Embodiment.

Explanation of symbols

1, 2, 3 Semiconductor device 10 Metal base plate 20 Resin case 30a, 30b External connection terminal 40, 41 Post 40a, 41a Upper 40aa Protrusion 40b, 41b Lower 50 Wiring board 50a Recess 50b Hole 50c, 50d Through hole 60 Screw 61 Washer 70 Pin terminal

Claims (5)

At least one semiconductor element enclosed in a resin case;
A plurality of columns fixed to the resin case;
A wiring board supported by screwing to the support;
With
A semiconductor device, wherein a convex portion formed on a side surface of the pillar penetrating into the wiring substrate and a concave portion formed in the wiring substrate are fitted. At least one semiconductor element enclosed in a resin case;
  A plurality of columns fixed to the resin case;
  A wiring board supported by screwing to the support;
  With
  A part of the side surface of the column penetrating into the wiring board is in contact with the wiring board, and the other part of the side surface is separated from the wiring board,
  The convex part formed in a part of the side and the concave part formed in the wiring board are fitted,
  A semiconductor device. The semiconductor device according to claim 2, wherein a part of the side surface and the wiring board are in contact with each other at two to four locations. At least one semiconductor element enclosed in a resin case;
  A plurality of columns fixed to the resin case;
  A wiring board supported by screwing to the support;
  With
  The wiring board is provided with a first through hole and a second through hole that communicates with the first through hole and extends with a predetermined width in a direction away from the first through hole,
  The support column includes a first portion fixed to the resin case and a second portion opposite to the first portion, and the second portion is inserted into the second through hole,
  The size of the first through hole is larger than the outer diameter of the second portion, and the predetermined width of the second through hole is the same as the outer diameter or 1 mm in the outer diameter. Is the same as adding the following length:
  A semiconductor device. The semiconductor device according to claim 4, wherein a convex portion formed on a side surface of the second portion and a concave portion formed on the wiring board are fitted.

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