JP5789416B2 - Coating apparatus and coating method - Google Patents

Description

  The present invention relates to a coating apparatus and a coating method.

  A fine pattern such as a wiring pattern or an electrode pattern is formed on a glass substrate constituting a display panel such as a liquid crystal display. In general, such a pattern is formed by a technique such as photolithography. In the photolithography method, a step of forming a resist film on a glass substrate, a step of pattern exposing the resist film, and a step of developing the resist film are performed.

  As a device for applying a resist film on the surface of a substrate, a coating device for applying a resist from a slit nozzle to a glass substrate while relatively moving the slit nozzle and the glass substrate while the glass substrate is floated is known. It has been. As such a floating-type coating apparatus, for example, a configuration is known in which a floating amount of a substrate is adjusted by ejecting gas at a predetermined pressure on a stage and suctioning the stage. In this case, since the resist is applied on the substrate so as to have a uniform thickness, it is necessary to float the substrate with a uniform flying height.

JP 2007-88201 A

  However, when the substrate moves on the stage, the stage is temporarily blocked by the substrate. For this reason, there is a possibility that the gas ejection pressure and the suction pressure temporarily change, and the flow rate of the ejected gas and the flow rate of the sucked gas may temporarily change. In this case, the floating amount of the substrate varies, and it becomes difficult to apply the resist uniformly.

  In view of the circumstances as described above, it is an object of the present invention to provide a coating apparatus and a coating method that can suppress fluctuations in the flying height of a substrate.

  A coating apparatus according to a first aspect of the present invention includes a coating unit having a nozzle that discharges a liquid material from a tip portion to a substrate, a guide surface that guides the substrate, and the substrate is used as the guide surface. A floating portion provided with a gas supply portion and a suction portion for floating, and a driving portion that drives at least one of the substrate and the nozzle while the floating substrate and the tip portion face each other. The gas supply unit includes a plurality of gas supply ports provided on the guide surface, a gas supply source for supplying gas to the plurality of gas supply ports, and a first end connected to the gas supply source. A gas supply path, and a second gas supply path branched from the other end of the first gas supply path and connected to each of the plurality of gas supply ports. Multiple suction ports provided, multiple A suction source for sucking the suction port, a first suction path having one end connected to the suction source, and a first branch branched from the other end of the first suction path and connected to each of the plurality of suction ports There are two suction paths, and at least one of the first gas supply path and the first suction path is provided with an atmosphere opening portion that can be opened to the atmosphere.

  In this case, since at least one of the first gas supply path and the first suction path is provided with an atmosphere opening portion that can be opened to the atmosphere, the flow rate of the ejected gas and the amount of the sucked gas It becomes possible to mitigate changes in at least one of the flow rates. Thereby, it becomes possible to suppress the fluctuation | variation of the floating amount of a board | substrate.

In the coating apparatus, the atmosphere opening portion has a branch path branched from a part of the path, and an atmosphere opening is provided at the tip of the branch path.
In this case, since the atmosphere opening portion has a branch path branched from a part of the path, and the atmosphere opening port is provided at the tip of the branch path, the amount of gas supplied through the branch path and the atmosphere opening port In addition, it is possible to mitigate a change in at least one of the suction amounts. Thereby, it becomes possible to suppress the fluctuation of the flying height.

In the coating apparatus, the atmosphere opening portion includes an adjustment valve that can adjust an opening degree of the atmosphere opening port.
In this case, since the atmosphere opening part has an adjustment valve capable of adjusting the opening degree of the atmosphere opening port, the gas supply amount and the suction amount can be adjusted more finely.

In the coating apparatus, the atmosphere opening portion includes a flow meter that measures a flow rate of gas flowing through the atmosphere opening.
In this case, since the atmosphere opening part has a flow meter for measuring the flow rate of the gas flowing through the atmosphere opening, the adjustment amount of the floating amount of the substrate can be grasped.

In the coating apparatus, the atmosphere opening portion is provided in the gas supply path, and the flow meter measures a flow rate of gas flowing out from the atmosphere opening port to the atmosphere.
In this case, since the atmosphere opening part is provided in the gas supply path, and the flow meter measures the flow rate of the gas flowing out from the atmosphere opening port to the atmosphere, the adjustment amount of the gas ejection amount can be grasped. .

In the coating apparatus, the atmosphere opening unit includes an adjustment valve capable of adjusting an opening degree of the atmosphere opening port, a flow meter that measures a flow rate of gas flowing through the atmosphere opening port, and a measurement result by the flow meter. And a valve control unit for controlling the adjustment amount of the adjustment valve.
In this case, the adjustment valve can be adjusted based on the measurement result of the adjustment valve that can adjust the opening degree of the atmosphere opening port, the flow meter that measures the flow rate of the gas flowing through the atmosphere opening port, and the flow meter. Therefore, it is possible to automatically adjust the gas ejection amount and the suction amount.

In the coating apparatus, the floating portion includes a stage provided at a position corresponding to the coating unit, and the guide surface is provided on the stage.
In this case, when the substrate floats on the guide surface provided on the stage, it is possible to suppress fluctuations in the flying height.

  The coating method according to the second aspect of the present invention includes a coating portion having a nozzle for discharging a liquid material from a tip portion to a substrate, a guide surface for guiding the substrate, and the substrate on the guide surface. A floating portion provided with a gas supply portion and a suction portion for floating, and a driving portion that drives at least one of the substrate and the nozzle while the floating substrate and the tip portion face each other. The gas supply unit includes a plurality of gas supply ports provided on the guide surface, a gas supply source for supplying gas to the plurality of gas supply ports, and a first end connected to the gas supply source. A gas supply path, and a second gas supply path branched from the other end of the first gas supply path and connected to each of the plurality of gas supply ports. Multiple suction ports provided, multiple A suction source for sucking the suction port, a first suction path having one end connected to the suction source, and a first branch branched from the other end of the first suction path and connected to each of the plurality of suction ports A coating method using a coating apparatus provided with an air release portion capable of opening the atmosphere to a part of at least one of the first gas supply path and the first suction path. The gas supply source and the suction source are operated with a part of the path open to the atmosphere, and a gas layer is formed between the substrate and the guide surface via the gas supply port and the suction port. Forming and floating the substrate on the gas layer, driving at least one of the substrate and the nozzle while facing the substrate in the floated state and the tip portion, and The nozzle And a step of discharging and moving paired manner, while relatively moving the the substrate and the nozzle, the liquid material from said tip portion of the nozzle to the substrate.

  In this case, the gas supply source and the suction source are operated with a part of the path open to the atmosphere, and a gas layer is formed between the substrate and the guide surface via the gas supply port and the suction port. Since the step of floating the substrate is included, it is possible to mitigate a change in at least one of the flow rate of the jetted gas and the flow rate of the sucked gas. Thereby, it becomes possible to suppress the fluctuation | variation of the floating amount of a board | substrate.

In the coating method, the step of floating the substrate includes adjusting an opening degree of the atmosphere opening port provided in the atmosphere opening portion.
In this case, since the opening degree of the atmosphere opening port provided in the atmosphere opening portion is adjusted, the gas supply amount and the suction amount are adjusted more finely.

In the coating method, the step of floating the substrate includes measuring a flow rate of the gas flowing through the atmosphere opening provided in the atmosphere opening portion.
In this case, since the flow rate of the gas flowing out from the atmosphere opening port to the atmosphere or the flow rate of the gas sucked from the atmosphere is measured, the gas ejection amount or the adjustment amount of the suction amount can be grasped.

In the coating method, the step of floating the substrate includes measuring at least one of a flow rate of gas flowing out from the atmosphere opening port to the atmosphere and a flow rate of gas sucked from the atmosphere.
In this case, since at least one of the flow rate of the gas flowing out from the atmosphere opening port to the atmosphere and the flow rate of the gas sucked from the atmosphere is measured, the adjustment amount of the gas ejection amount can be grasped.

In the coating method, the step of levitating the substrate includes measuring the flow rate of the gas flowing through the atmosphere opening provided in the atmosphere opening portion, and depending on the measurement result of the gas flow rate, Adjusting the opening of the opening.
In this case, since the opening degree of the atmosphere opening is adjusted based on the measurement result by the flow meter, the gas ejection amount and the suction amount can be automatically adjusted.

  According to the present invention, it is possible to suppress fluctuations in the flying height of the substrate.

It is a perspective view which shows the structure of the coating device which concerns on this embodiment. It is a front view which shows the structure of the coating device which concerns on this embodiment. It is a top view which shows the structure of the coating device which concerns on this embodiment. It is a side view which shows the structure of the coating device which concerns on this embodiment. It is a figure which shows the principal part structure of a conveying machine. It is a figure which shows the structure of the gas ejection mechanism and suction mechanism of the process stage of the coating device which concerns on this embodiment. It is a figure which shows the structure of the gas ejection mechanism and suction mechanism of the process stage of the coating device which concerns on this embodiment. It is a figure which shows operation | movement of the coating device which concerns on this embodiment. FIG. FIG. FIG. It is a table | surface which shows the relationship between the shielding rate of a processing stage, the total flow volume of the gas ejected to a processing stage, and the flow volume of the gas which flows out from an air | atmosphere open port. FIG. FIG. It is a figure which shows the structure of the conveyance mechanism which concerns on a modification.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a perspective view of a coating apparatus 1 according to this embodiment.
As shown in FIG. 1, a coating apparatus 1 according to the present embodiment is a coating apparatus that coats a resist on a glass substrate used for a liquid crystal panel, for example, and includes a substrate transport unit 2, a coating unit 3, and a management unit. 4 and the control part CONT are main components.

  In the coating apparatus 1, a resist is applied onto the substrate by the coating unit 3 while the substrate is lifted and transported by the substrate transport unit 2, and the state of the coating unit 3 is managed by the management unit 4. It has become so. The control unit CONT comprehensively controls each unit of the coating apparatus 1.

2 is a front view of the coating apparatus 1, FIG. 3 is a plan view of the coating apparatus 1, and FIG. The detailed configuration of the coating apparatus 1 will be described with reference to these drawings.
(Substrate transport section)
First, the structure of the board | substrate conveyance part 2 is demonstrated.
The substrate transport unit 2 includes a substrate carry-in region 20, a coating processing region 21, a substrate carry-out region 22, a transport mechanism 23, and a frame unit 24 that supports them. In the substrate transport unit 2, the transport mechanism 23 transports the substrate S sequentially to the substrate carry-in area 20, the coating processing area 21, and the substrate carry-out area 22. The substrate carry-in area 20, the coating treatment area 21, and the substrate carry-out area 22 are arranged in this order from the upstream side to the downstream side in the substrate carrying direction. The transport mechanism 23 is provided on one side of each part so as to straddle each part of the substrate carry-in area 20, the coating treatment area 21, and the substrate carry-out area 22.

  Hereinafter, in describing the configuration of the coating apparatus 1, for simplicity of description, directions in the figure will be described using an XYZ coordinate system. The substrate transport direction is the longitudinal direction of the substrate transport unit 2 and the substrate transport direction is referred to as the X direction. A direction orthogonal to the X direction (substrate transport direction) in plan view is referred to as a Y direction. A direction perpendicular to the plane including the X direction axis and the Y direction axis is referred to as a Z direction. In each of the X direction, the Y direction, and the Z direction, the arrow direction in the figure is the + direction, and the direction opposite to the arrow direction is the-direction.

The substrate carry-in area 20 is a portion for carrying the substrate S carried from the outside of the apparatus, and has a carry-in stage 25 and a lift mechanism 26.
The carry-in stage 25 is provided on the upper portion of the frame portion 24, and is a rectangular plate-like member made of, for example, SUS or the like in plan view. The carry-in stage 25 has a long X direction. The carry-in stage 25 is provided with a plurality of gas ejection ports 25a and lifting pin retracting holes 25b. The gas outlet 25 a and the lifting pin retracting hole 25 b are provided so as to penetrate the carry-in stage 25.

  The gas ejection port 25a is a hole for ejecting gas onto the stage surface (conveying surface) 25c of the carry-in side stage 25. For example, the gas jet port 25a is arranged in a matrix in a plan view in the region where the substrate S passes in the carry-in stage 25. Yes. A gas supply source (not shown) is connected to the gas outlet 25a. In the carry-in stage 25, the substrate S can be floated in the + Z direction by the gas ejected from the gas ejection port 25a.

  The elevating pin retracting hole 25b is provided in an area of the loading side stage 25 where the substrate S is loaded. The elevating pin retracting hole 25b is configured such that the gas supplied to the stage surface 25c does not leak out.

  One alignment device 25d is provided at each end of the carry-in stage 25 in the Y direction. The alignment device 25d is a device that aligns the position of the substrate S carried into the carry-in stage 25. Each alignment device 25d has a long hole and an alignment member provided in the long hole, and mechanically holds the substrate loaded into the loading side stage 25 from both sides.

  The lift mechanism 26 is provided on the back side of the substrate loading position of the loading stage 25. The lift mechanism 26 includes an elevating member 26a and a plurality of elevating pins 26b. The elevating member 26a is connected to a driving mechanism (not shown), and the elevating member 26a is moved in the Z direction by driving the driving mechanism. The plurality of elevating pins 26b are erected from the upper surface of the elevating member 26a toward the carry-in stage 25. Each raising / lowering pin 26b is arrange | positioned in the position which overlaps with said raising / lowering pin retracting hole 25b, respectively by planar view. As the elevating member 26a moves in the Z direction, each elevating pin 26b appears and disappears on the stage surface 25c from the elevating pin appearing hole 25b. Ends in the + Z direction of the lift pins 26b are provided so that their positions in the Z direction are aligned, so that the substrate S transported from the outside of the apparatus can be held in a horizontal state. .

  The coating processing region 21 is a portion where resist coating is performed, and a processing stage 27 that floats and supports the substrate S is provided. The processing stage 27 is a rectangular plate-like member in plan view in which the stage surface (conveying surface) 27c is covered with a light-absorbing material mainly composed of hard alumite, for example, on the + X direction side with respect to the loading-side stage 25. Is provided.

  In the portion of the processing stage 27 covered with the light absorbing material, reflection of light such as laser light is suppressed. The processing stage 27 has a longitudinal Y direction. The dimension of the processing stage 27 in the Y direction is substantially the same as the dimension of the loading stage 25 in the Y direction. The processing stage 27 is provided with a plurality of gas ejection ports 27a for ejecting gas onto the stage surface 27c and a plurality of suction ports 27b for sucking the gas on the stage surface 27c. The gas ejection port 27 a and the suction port 27 b are provided so as to penetrate the processing stage 27. In addition, a plurality of grooves (not shown) are provided inside the processing stage 27 to give resistance to the pressure of the gas passing through the gas outlet 27a and the suction port 27b. The plurality of grooves are connected to the gas outlet 27a and the suction port 27b inside the stage.

  In the processing stage 27, the pitch of the gas jets 27 a is narrower than the pitch of the gas jets 25 a provided in the carry-in stage 25, and the gas jets 27 a are densely provided compared to the carry-in stage 25. Further, in the processing stage 27, suction ports 27b are densely provided together with the gas ejection ports 27a. As a result, in this processing stage 27, the flying height of the substrate can be adjusted with higher accuracy than in the other stages, and the flying height of the substrate is controlled to be, for example, 100 μm or less, preferably 50 μm or less. Is possible. The processing stage 27 is provided with a detection unit MS that can detect the distance between the stage surface 27c and the substrate S.

  The substrate carry-out area 22 is a part where the substrate S coated with resist is carried out of the apparatus, and includes a carry-out stage 28 and a lift mechanism 29. The carry-out stage 28 is provided on the + X direction side with respect to the processing stage 27, and is composed of substantially the same material and dimensions as the carry-in stage 25 provided in the substrate carry-in region 20. Similarly to the carry-in stage 25, the carry-out stage 28 is provided with a gas ejection port 28a and a lift pin retracting hole 28b. The lift mechanism 29 is provided on the back side of the substrate carry-out position of the carry-out stage 28 and is supported by the frame unit 24, for example. The lift member 29 a and the lift pin 29 b of the lift mechanism 29 have the same configuration as each part of the lift mechanism 26 provided in the substrate carry-in area 20. The lift mechanism 29 can lift the substrate S by lift pins 29b for transferring the substrate S when the substrate S on the unloading stage 28 is unloaded to an external device.

  As shown in FIG. 4, the transport mechanism 23 includes a first transport mechanism 60 and a second transport mechanism 61. 3 shows a state where the first transport mechanism 60 holds the substrate S, and the second transport mechanism 61 disposed below the first transport mechanism 60 is not shown.

  The first transport mechanism 60 includes a transport device 60a, a vacuum pad 60b, a rail 60c, and a moving mechanism 63 that enables the transport device 60a to move on a surface parallel to the transport surface of the substrate S. The second transport mechanism 61 includes a transport device 61a, a vacuum pad 61b, a rail 61c, and an elevating mechanism 62 that enables the transport device 61a to move up and down (up and down operation). The rails 60c and 61c extend across the stages on the side of the carry-in stage 25, the processing stage 27, and the carry-out stage 28.

  The conveyors 60a and 61a have a configuration in which, for example, a linear motor is provided therein. When the linear motor is driven, the conveyors 60a and 61a move on the rails 60c and 61c along the respective stages. Can move. In other words, the transporters 60a and 61a have a function as a holding unit that holds the substrate S and a function as a driving unit that drives the holding unit. The transporters 60a and 61a are configured such that predetermined portions 60d and 61d overlap with the −Y direction end of the substrate S in plan view. The portions 60d and 61d overlapping the substrate S are arranged at a position lower than the height position of the back surface of the substrate when the substrate S is levitated.

  As shown in FIG. 4, the second transport mechanism 61 is disposed at the lower stage of the stepped step portion 24 a of the frame portion 24 compared to the first transport mechanism 60. Further, when viewed in plan, the second transport mechanism 61 is arranged on the stage side with respect to the first transport mechanism 60.

  As shown in FIG. 4, the second transport mechanism 61 can access the substrate S by raising the transport machine 61 a by the lifting mechanism 62. On the other hand, the first transport mechanism 60 can access the substrate S by horizontally moving the transport device 60 a on a plane parallel to the transport surface of the substrate S by the moving mechanism 63. The transport device 60a of the first transport mechanism 60 and the transport device 61a of the second transport mechanism 61 can be moved independently of each other.

  Further, for example, when the first transport mechanism 60 holds the substrate S, the transport device 61a of the second transport mechanism 61 that does not hold the substrate S waits downward when the elevating mechanism 62 is lowered. The first transfer mechanism 60 (the transfer device 60a) is retracted from the transfer path. When the second transport mechanism 61 holds the substrate S, the transport device 60a of the first transport mechanism 60 that does not hold the substrate S moves in the −Y direction by the moving mechanism 63, and the second transport mechanism 61 (conveyor 61a) is retracted from the conveyance path.

  As shown in FIG. 3, a plurality of (three in this embodiment) vacuum pads 60b are arranged along the transport direction of the substrate S in the portion 60d overlapping the substrate S of the transport device 60a. The vacuum pad 60b has a suction surface for vacuum-sucking the substrate S, and is arranged so that the suction surface faces upward. The vacuum pad 60b can hold the substrate S when the suction surface sucks the back surface end of the substrate S. These vacuum pads 60b are preferably held within 250 mm from the front end of the substrate S in the transport direction, and preferably within 80 mm. Specifically, in the present embodiment, the transporter 60a holds the substrate S such that the distance W from the front end of the substrate S in the transport direction to the vacuum pad 60b is within 80 mm. As a result, the substrate S is uniformly held by the transfer device 60a, and the end portion of the substrate is prevented from sagging, so that the substrate S can be transferred in a state of being uniformly lifted. Therefore, unevenness is prevented from occurring in the film obtained by drying and solidifying the resist applied on the substrate S.

  In addition, although the structure of the conveyance machine 61a in the 2nd conveyance mechanism 61 is not illustrated in FIG. 3, it has the same structure as the said conveyance machine 60a. That is, three vacuum pads 61b in the transport device 61a are arranged along the transport direction of the substrate S in a portion overlapping the substrate S.

  Here, the configuration of the main parts of the transporters 60a and 61a will be described. Since the transporters 60a and 61a have the same configuration as described above, the transporter 60a is taken as an example in this description, and the configuration will be described with reference to FIG. 5A is a diagram illustrating a plan configuration of a main part of the transporting device 60a, and FIG. 5B is a diagram illustrating a cross-sectional configuration of a main part of the transporting device 60a.

  As shown in FIG. 5A, the vacuum pad 60b provided in the transporter 60a has a substantially oval shape in a plan view in contact with the substrate S. An exhaust hole 65 connected to a vacuum pump (not shown) or the like is provided inside the vacuum pad 60b. The vacuum pad 60b can vacuum-suck the substrate S by exhausting the sealed space formed between the vacuum pad 60b and the substrate S through the exhaust hole 65.

  Further, as shown in FIG. 5B, a stopper member 66 for regulating the position of the substrate S being transported is provided on the side of the vacuum pad 60b provided on the transport machine 60a. The stopper member 66 includes a convex portion 66a that faces the side surface S1 of the substrate S and faces the lower surface side of the substrate S. The convex portion 66a functions as a stopper that restricts downward bending of the substrate S. As shown in FIG. 5A, the convex portion 66a is provided in a state of surrounding the outer peripheral portion of the vacuum pad 60b in a frame shape. The upper surface of the convex portion 66a is preferably set in the range of −30 to +30 μm with respect to the upper surface of the carry-in stage 25, and is preferably set in the vicinity of −20 μm. The positional relationship between the convex portion 66a and the vacuum pad 60b is preferably set so that the vacuum pad 60b is about 0 to 1 mm upward.

  In addition, you may make it the structure where the convex part 66a is arrange | positioned between the adjacent vacuum pads 60b, ie, the convex part 66a surrounds the four sides of each vacuum pad 60b.

  The vacuum pad 60b according to the present embodiment can be displaced with respect to the substrate S. In this specific embodiment, the vacuum pad 60b has a bellows portion 67 having a bellows structure. Thereby, for example, even when the height of the substrate S fluctuates due to bending at the end of the substrate S, the vacuum pad 60b follows the movement of the substrate S to reliably hold the suction to the substrate S. can do. Further, the vacuum pad 60b can adsorb the substrate S satisfactorily by the displacement of the bellows portion 67 even when the flying height of the substrate S on the stage is changed.

(Applying part)
Next, the configuration of the application unit 3 will be described.
The application unit 3 is a part for applying a resist on the substrate S, and includes a portal frame 31 and a nozzle 32.

  The portal frame 31 includes a support member 31a and a bridging member 31b, and is provided so as to straddle the processing stage 27 in the Y direction. One support member 31 a is provided on the Y direction side of the processing stage 27, and each support member 31 a is supported on both side surfaces of the frame portion 24 on the Y direction side. Each strut member 31a is provided so that the height positions of the upper end portions are aligned. The bridging member 31b is bridged between the upper end portions of the respective column members 31a, and can be moved up and down with respect to the column members 31a.

  The portal frame 31 is connected to a moving mechanism 31c and is movable in the X direction. The portal frame 31 is movable between the management unit 4 by the moving mechanism 31c. That is, the nozzle 32 provided in the portal frame 31 can move between the management unit 4. Further, the portal frame 31 can be moved in the Z direction by a moving mechanism (not shown).

  The nozzle 32 is formed in a long and long shape in one direction, and is provided on the surface on the −Z direction side of the bridging member 31 b of the portal frame 31. A slit-like opening 32a is provided along the longitudinal direction of the nozzle 32 at the tip in the -Z direction, and a resist is discharged from the opening 32a. The nozzle 32 is disposed so that the longitudinal direction of the opening 32 a is parallel to the Y direction and the opening 32 a faces the processing stage 27. The dimension in the longitudinal direction of the opening 32a is smaller than the dimension in the Y direction of the substrate S to be transported, so that the resist is not applied to the peripheral region of the substrate S. A flow passage (not shown) through which the resist flows through the opening 32a is provided inside the nozzle 32, and a resist supply source (not shown) is connected to the flow passage. The resist supply source has a pump (not shown), for example, and the resist is discharged from the opening 32a by pushing the resist to the opening 32a with the pump. The support member 31a is provided with a moving mechanism (not shown), and the nozzle 32 held by the bridging member 31b is movable in the Z direction by the moving mechanism. The nozzle 32 is provided with a moving mechanism (not shown), and the moving mechanism allows the nozzle 32 to move in the Z direction with respect to the bridging member 31b. On the lower surface of the bridging member 31b of the portal frame 31, there is a sensor 33 that measures the distance in the Z direction between the opening 32a of the nozzle 32, that is, between the tip of the nozzle 32 and the facing surface facing the nozzle tip. It is attached.

(Management Department)
The configuration of the management unit 4 will be described.
The management unit 4 is a part that manages the nozzle 32 so that the discharge amount of the resist (liquid material) discharged onto the substrate S is constant, and the −X direction side with respect to the coating unit 3 in the substrate transport unit 2. (Upstream in the substrate transport direction). The management unit 4 includes a preliminary discharge mechanism 41, a dip tank 42, a nozzle cleaning device 43, a storage unit 44 that stores them, and a holding member 45 that holds the storage unit. The holding member 45 is connected to the moving mechanism 45a. The accommodating portion 44 is movable in the X direction by the moving mechanism 45a.

  The preliminary discharge mechanism 41, the dip tank 42, and the nozzle cleaning device 43 are arranged in this order in the −X direction side. The dimensions of the preliminary discharge mechanism 41, the dip tank 42, and the nozzle cleaning device 43 in the Y direction are smaller than the distance between the columnar members 31a of the portal frame 31, and the portal frame 31 straddles each part. It can be accessed at.

  The preliminary ejection mechanism 41 is a part that ejects the resist preliminary. The preliminary discharge mechanism 41 is provided closest to the nozzle 32. The dip tank 42 is a liquid tank in which a solvent such as thinner is stored. The nozzle cleaning device 43 is a device for rinsing and cleaning the vicinity of the opening 32a of the nozzle 32, and includes a cleaning mechanism (not shown) that moves in the Y direction and a moving mechanism (not shown) that moves the cleaning mechanism. This moving mechanism is provided on the −X direction side of the cleaning mechanism. The nozzle cleaning device 43 has a larger dimension in the X direction than the preliminary discharge mechanism 41 and the dip tank 42 because the moving mechanism is provided. In addition, about arrangement | positioning of the preliminary discharge mechanism 41, the dip tank 42, and the nozzle washing | cleaning apparatus 43, it is not restricted to arrangement | positioning of this embodiment, Other arrangement | positioning may be sufficient. In addition, the preliminary ejection mechanism 41, the dip tank 42, and the nozzle cleaning device 43 are not limited to the case where they are all disposed, and may be configured such that some of them are omitted.

(Gas ejection mechanism / suction mechanism)
FIG. 6 is a diagram showing the configuration of the gas ejection mechanism / suction mechanism of the carry-in stage 25, the processing stage 27, and the carry-out stage 28. Based on the same figure, the structure regarding gas ejection and gas suction of each said stage is demonstrated.

  Only the gas ejection mechanisms 150 and 155 are provided on the carry-in stage 25 and the carry-out stage 28, and no suction mechanism is provided. The configurations of the gas ejection mechanisms 150 and 155 are the same in both stages. These gas ejection mechanisms 150 and 155 have blowers 151 and 156, temperature control units 152 and 157, and manifolds 153 and 158, respectively.

  The blowers 151 and 156 are connected to temperature control units 152 and 157 by pipes 150a and 155a, respectively. The temperature control units 152 and 157 are provided with a cooling mechanism such as a refrigerant mechanism and a heating mechanism such as a heating wire, for example, and are configured so that the temperature of the supplied gas can be adjusted by the cooling mechanism and the heating mechanism. Yes. In the temperature control unit 152 and the temperature control unit 157, the temperature of the gas can be adjusted independently. The temperature control units 152 and 157 are connected to the manifolds 153 and 158 by pipes 150b and 155b, respectively.

  Temperature sensors 154 and 159 are attached to the manifolds 153 and 158, respectively.

  The temperature sensors 154 and 159 measure the temperature of the gas in the manifolds 153 and 158, and transmit the measurement results to the temperature control units 152 and 157, respectively. In the temperature control units 152 and 157, the measurement results of the temperature sensors 154 and 159 are fed back to adjust the temperature of the gas. As described above, the temperature control units 152 and 157 and the temperature sensors 154 and 159 constitute temperature adjustment mechanisms 181 and 182 that respectively adjust the gas temperature by feeding back.

  Pressure gauges are attached to the pipes 150b and 155b, and are connected to the carry-in stage 25 and the carry-out stage 28 by pipes 150c and 155c, respectively. Various valves are provided in each of the pipes 150a to 150c and 155a to 155c. The pipes 150a to 150c and 155a to 155c may be provided with an air particle amount measuring device that measures the amount of air particles.

On the other hand, the processing stage 27 is provided with a suction mechanism 170 in addition to the gas ejection mechanism 160.
FIG. 7 is a diagram showing the configuration of the gas ejection mechanism 160 and the suction mechanism 170 provided in the processing stage 27. As shown in the figure, the gas ejection mechanism 160 includes a blower 161, a temperature control unit 162, a filter 163, an auto pressure controller (APC) 164, a manifold 165, a temperature sensor 166, and an ejection amount monitoring port 167.

  The blower 161 is a gas supply source that supplies gas to the gas ejection mechanism, and is connected to the temperature control unit 162 by a pipe 160a. As a gas supply source, a gas supply line such as a factory may be connected instead of the blower 161.

  The temperature control unit 162 is a unit that adjusts the temperature of the supplied gas, for example. The gas circulation part in the temperature control unit 162 is provided with a cooling mechanism such as a refrigerant mechanism and a heating mechanism such as a heating wire. By these cooling mechanism and heating mechanism, the temperature of the gas can be raised or lowered. In the temperature control unit 162, the temperature of the gas can be adjusted independently of the temperature control units 152 and 157 described above. The temperature control unit 162 is connected to the APC 164 by a pipe 160b.

  A filter 163 is provided in the pipe 160b. The filter 163 is a part for removing foreign matters mixed in the supplied gas. Further, a relief valve (not shown) may be provided in the pipe 160b.

  The APC 164 is a unit that adjusts the gas supply amount. The APC 164 includes a butterfly valve 164a and a controller 164b. The controller 164b can adjust the opening degree of the butterfly valve 164a, and the gas supply amount can be adjusted by adjusting the opening degree of the butterfly valve 164a. The APC 164 is connected to the manifold 165 via a pipe 160c.

  A flow meter 169a and a pressure gauge 169b are attached to the pipe 160c. The flow rate and pressure of the gas in the pipe 160c are measured by the flow meter 169a and the pressure gauge 169b. Each measurement result is transmitted to the APC 164, for example.

  The manifold 165 is a unit that branches the gas flowing through the pipe 160c. In the manifold 165, the pipe 160c is connected to a plurality of branched pipes 160d. Each pipe 160d is connected to a gas outlet 27a of the processing stage 27.

  The temperature sensor 166 is a sensor that measures the temperature of the gas in the manifold 165. The gas temperature data measured by the temperature sensor 166 is transmitted to the temperature control unit 162 via, for example, a communication line. The temperature control unit 162 can adjust the temperature of the gas by feeding back the measurement result of the temperature sensor 166. As described above, the temperature control unit 162 and the temperature sensor 166 constitute a temperature adjustment mechanism 183 that adjusts the gas temperature by feedback.

  The ejection amount monitoring port 167 is configured to have a gas flow rate detection port, and the gas flow rate equivalent to that of the gas ejection port 27a of the processing stage 27 can be detected by this flow rate detection port. The ejection amount monitoring port 167 is provided with a flow meter 167a and a pressure gauge 167b so that the flow rate and pressure of the gas ejected from the gas ejection port 27a can be measured. In addition, about the measurement result by the flowmeter 167a and the pressure gauge 167b, the structure transmitted to the controller 164b in APC164 may be sufficient.

  Various piping etc. are attached to said piping 160a-160e, and an opening degree can be suitably adjusted in each valve. In addition, the atmosphere opening portion 191 is connected to the pipe 160c.

  The air release unit 191 includes a branch pipe 191a, a gas flow rate adjustment valve 191b, and a flow meter 191c. The branch pipe 191a is branched from the pipe 160c and has an atmosphere opening port 191d whose tip is opened to the atmosphere. The gas flow rate adjusting valve 191b can adjust the opening degree of the atmosphere opening port 191d by adjusting the flow path diameter in the branch pipe 191a.

  The gas flow rate adjustment valve 191b can adjust the flow rate of the gas flowing through the branch pipe 191a and flowing out from the atmosphere opening port 191d to the atmosphere by adjusting the opening degree of the atmosphere opening port 191d. The flow meter 191c measures the flow rate of the gas flowing through the branch pipe 191a and flowing out from the atmosphere opening port 191d to the atmosphere. The control unit CONT adjusts the gas flow rate adjustment valve 191b based on the measurement result of the flow meter 191c.

  The suction mechanism 170 includes a blower 171, an auto pressure controller (APC) 172, a trap tank 173, a manifold 174, and a suction amount monitoring port 175. The blower 171, the APC 172, the trap tank 173, and the manifold 174 are connected to each other by pipes 170a to 170c, and various valves are attached to the pipes 170a to 170c. A gas suction line such as a factory may be used instead of the blower 171. Moreover, the structure which is not provided with the manifold 174 may be sufficient.

  The manifold 174 is connected to a plurality of branched pipes 170d. Each pipe 170 d is connected to the suction port 27 b of the processing stage 27.

  The APC 172 is provided with a butterfly valve 172a and a controller 172b for adjusting the gas supply amount. The suction amount monitoring port 175 is connected to the processing stage 27 by a pipe 170e, and a gas flow rate detection port is connected to the connection portion. In the suction amount monitoring port 175, the gas flow rate directly below the processing stage 27 can be detected by this flow rate detection port. A flow meter 175a and a pressure meter 175b are attached to the suction amount monitoring port 175, and a gas flow rate equivalent to that of the gas ejection port 27a of the processing stage 27 can be detected by the suction port 27b. In addition, about the measurement result by the flowmeter 175a and the pressure gauge 175b, the structure transmitted to the controller 172b in APC172 may be sufficient.

  Further, a flow meter may be provided between the APC 172 and the suction port 27b, and the measurement result may be fed back to the controller 172b in the APC 172.

  The piping 170c is connected to the atmosphere opening portion 192. The air release unit 192 includes a branch pipe 192a, a gas flow rate adjustment valve 192b, and a flow meter 192c. The branch pipe 192a is branched from the pipe 170c, and serves as an atmosphere opening port 192d whose tip is opened to the atmosphere. The gas flow rate adjusting valve 192b can adjust the opening degree of the air opening 192d by adjusting the flow path diameter in the branch pipe 192a.

  The gas flow rate adjusting valve 192b can adjust the flow rate of the gas that flows through the branch pipe 192a and is sucked from the atmosphere through the atmosphere opening port 192d by adjusting the opening degree of the atmosphere opening port 192d. The flow meter 192c measures the flow rate of the gas flowing through the branch pipe 192a and flowing in from the atmosphere opening port 192d. The controller CONT adjusts the gas flow rate adjustment valve 192b based on the measurement result of the flow meter 192c.

Next, operation | movement of the coating device 1 comprised as mentioned above is demonstrated.
8-14 is a top view which shows the operation | movement process of the coating device 1. FIG. With reference to each figure, the operation | movement which apply | coats a resist to the board | substrate S is demonstrated. In this operation, the substrate S is carried into the substrate carry-in region 20, a resist is applied in the coating treatment region 21 while the substrate S is floated and conveyed, and the substrate S coated with the resist is carried out from the substrate carry-out region 22. . 8 to 10, only the outlines of the portal frame 31 and the management unit 4 are indicated by broken lines, so that the configurations of the nozzle 32 and the processing stage 27 can be easily discriminated. Hereinafter, detailed operations in each part will be described.

  Before the substrate is carried into the substrate carry-in area 20, the coating apparatus 1 is put on standby. Specifically, the transport device 60a of the first transport mechanism 60 is arranged on the −Y direction side of the substrate carry-in position of the carry-in stage 25, and the height position of the vacuum pad 60b is matched with the flying height position of the substrate. At the same time, gas is ejected or sucked from the gas ejection port 25a of the loading side stage 25, the gas ejection port 27a of the processing stage 27, the suction port 27b, and the gas ejection port 28a of the unloading side stage 28, and the substrate floats on the surface of each stage. The gas is supplied to such an extent that

  In this state, for example, when the substrate S is transferred from the outside to the substrate loading position shown in FIG. 3 by a transfer arm (not shown), the lifting member 26a is moved in the + Z direction to move the lifting pin 26b from the lifting pin retracting hole 25b. Project to the stage surface 25c. And the board | substrate S is lifted by the raising / lowering pin 26b, and the said board | substrate S is received. Further, an alignment member is projected from the long hole of the alignment device 25d to the stage surface 25c.

  After receiving the board | substrate S, the raising / lowering member 26a is lowered | hung and the raising / lowering pin 26b is accommodated in the raising / lowering pin retracting hole 25b. At this time, since the gas layer is formed on the stage surface 25c, the substrate S is held in a state of being floated with respect to the stage surface 25c by the gas. When the substrate S reaches the surface of the gas layer, the alignment member 25d aligns the substrate S, and the moving mechanism 63 of the first transport mechanism 60 disposed on the −Y direction side of the substrate loading position. Thus, the vacuum pad 60b of the transfer device 60a can be vacuum-sucked to the −Y direction side end of the substrate S (FIG. 3). After the −Y direction side end of the substrate S is adsorbed by the vacuum pad 60b, the transporter 60a is moved along the rail 60c. Since the substrate S is in a floating state, the substrate S moves smoothly along the rail 60c even if the driving force of the transporter 60a is relatively small.

  When the tip in the transport direction of the substrate S reaches the position of the opening 32a of the nozzle 32, the resist is discharged from the opening 32a of the nozzle 32 toward the substrate S as shown in FIG. The resist is discharged while the position of the nozzle 32 is fixed and the substrate S is transported by the transport device 60a.

  In the present embodiment, in the middle of applying the resist to the substrate S transported by the first transport mechanism 60, for example, another substrate S ′ is transferred from the outside to the substrate loading position by a transport arm (not shown). I have to. After receiving the substrate S ′, the elevating member 26a is lowered and the elevating pins 26b are accommodated in the elevating pin retracting holes 25b, whereby the substrate S ′ is held in a state of being floated by the gas with respect to the stage surface 25c. .

  When the substrate S ′ reaches the surface of the gas layer, the alignment member 25d aligns the substrate S ′, and the second transport mechanism 61 disposed on the −Z direction side of the substrate loading position moves up and down. The transporting device 61a is raised by the mechanism 62, and the vacuum pad 61b is vacuum-sucked to the −Y direction side end of the substrate S ′. The controller CONT also causes the flying height to be detected as appropriate for the substrate S ′ as with the substrate S.

  As described above, in the present embodiment, the transport device 60a of the first transport mechanism 60 and the transport device 61a of the second transport mechanism 61 are movable independently of each other, so that they are transported by the first transport mechanism 60. Before the resist coating process on the substrate S is completed, another substrate S ′ can be transported onto the stage by the second transport mechanism 61. Therefore, the resist can be satisfactorily applied onto the substrates S and S ′ that are sequentially conveyed in a cantilever state, and high throughput can be obtained in the resist application process.

  As the substrate S moves, a resist film R is applied onto the substrate S as shown in FIG. As the substrate S passes under the opening 32a for discharging the resist, a resist film R is formed in a predetermined region of the substrate S. Further, the transporter 61a of the second transport mechanism 61 moves the substrate S ′ below the opening 32a.

  The substrate S on which the resist film R is formed is transferred to the carry-out stage 28 by the transfer device 60a. In the carry-out stage 28, the substrate S is transported to the substrate carry-out position shown in FIG. Further, when another substrate S ′ transported by the transport device 61a passes under the opening 32a, a resist film R is formed in a predetermined region of the other substrate S ′.

  When the substrate S reaches the substrate unloading position, the suction of the vacuum pad 60b is released, and the elevating member 29a of the lift mechanism 29 is moved in the + Z direction. Then, the elevating pins 29b protrude from the elevating pin retracting holes 28b to the back surface of the substrate S, and the substrate S is lifted by the elevating pins 29b. In this state, for example, an external transfer arm provided on the + X direction side of the carry-out stage 28 accesses the carry-out stage 28 and receives the substrate S. After passing the substrate S to the transport arm, the first transport mechanism 60 uses the moving mechanism 63 to retract the transport device 60a (vacuum pad 60b) from below the substrate S and transports another substrate S ′. Retreats from the transport path (movement path) of the transport mechanism 61.

  Then, the first transport mechanism 60 returns to the substrate carry-in position of the carry-in stage 25 again and waits until the next substrate is transported. At this time, as shown in FIG. 10, the resist coating is performed on the substrate S ′ transported to the second transport mechanism 61, but the first transport mechanism 60 is the second transport mechanism as described above. Since it is retracted from the transport path 61, it can return to the substrate transport position of the transport side stage 25 without contacting the second transport mechanism 61 and preventing the transport of other substrates S '.

  When the substrate S ′ transported by the second transport mechanism 61 reaches the substrate unloading position, the external transport arm similarly accesses the unloading stage 28 and receives the substrate S. And it returns to the board | substrate carrying-in position of the carrying-in stage 25 again, and waits until the next board | substrate S is conveyed.

FIG. 11A to FIG. 11D are diagrams showing how the substrate S moves from the carry-in stage 25 to the carry-out stage 28 via the processing stage 27.
As shown in FIG. 11A, when the substrate S has moved on the carry-in stage 25 and has not reached the processing stage 27, the processing stage 27 is not blocked by the substrate S. From this state, as shown in FIGS. 11B to 11D, the substrate S moves on the processing stage 27, so that the processing stage 27 is temporarily blocked by the substrate S. .

  When the processing stage 27 is blocked by the substrate S, the gas ejection pressure and suction pressure of the portion temporarily change, and the flow rate of the jetted gas and the flow rate of the sucked gas may temporarily change. is there. In this case, the flying height of the substrate S may vary, and it may be difficult to apply the resist R uniformly.

  On the other hand, in the present embodiment, when the substrate S is transported, the control unit CONT has the gas flow rate provided in the atmosphere release unit 191 of the gas ejection mechanism 160 before the substrate S reaches the processing stage 27. The regulating valve 191b is opened, and the atmosphere opening port 191d is opened. Further, before the substrate S reaches the processing stage 27, the control unit CONT opens the gas flow rate adjustment valve 192b provided in the atmosphere opening unit 192 of the suction mechanism 170 so that the atmosphere opening port 192d is opened. To do.

  By making the atmosphere opening port 191d open, the gas ejection mechanism 160 can eject gas from the atmosphere opening port 191d in addition to the gas ejection port 27a. In this configuration, even when the processing stage 27 is blocked, it can escape to the atmosphere opening 191d. Therefore, when the substrate S is transported on the processing stage 27, the fluctuation of the gas ejection pressure at the gas ejection outlet 27a is suppressed, and the fluctuation of the flow rate of the gas ejected from the gas ejection outlet 27a is suppressed.

  Similarly, when the atmosphere opening port 192d is opened, the suction mechanism 170 can suck from the atmosphere opening port 192d in addition to the suction port 27b. In this configuration, even if the processing stage 27 is blocked, the suction amount can be supplemented from the air opening 192d. Therefore, when the substrate S is transported on the processing stage 27, the fluctuation of the suction pressure at the suction port 27b is suppressed, and the fluctuation of the flow rate of the gas sucked from the suction port 27b is suppressed.

FIG. 12 is a table showing the relationship between the shielding rate of the processing stage 27, the total flow rate of gas ejected to the processing stage 27, and the flow rate of gas flowing out from the atmosphere opening port 191d. In the present embodiment, when the dimension in the X direction of the processing stage 27 is t1, and the dimension in the X direction of the portion of the substrate S that overlaps the processing stage 27 is t2, the shielding rate of the processing stage 27 is
Shielding rate = (t2 / t1) × 100 (%)
An example will be described.

  When the substrate S does not reach the processing stage 27, that is, when the shielding rate of the processing stage 27 is 0%, the control unit CONT sets the total flow rate of the gas ejected to the processing stage 27 to 300 l per minute, for example. And Further, the flow rate of the gas flowing out from the atmosphere opening port 191d is, for example, 2000 l per minute.

  When the substrate S is transported from this state and the discharge of the resist R is started by the nozzle 32 as shown in FIG. 11B, the substrate S shields approximately half of the region in the X direction in the processing stage 27. It becomes a state. Thus, when the shielding rate of the processing stage 27 is approximately 50%, the processing stage 27 is shielded by the substrate S, and the gas ejection pressure and suction pressure are increased accordingly.

  Therefore, the control unit CONT opens the gas flow rate adjustment valve 191b to increase the opening degree of the atmosphere opening port 191d. By this operation, the total flow rate of the gas ejected to the processing stage 27 is maintained at 300 l / min, and the flow rate of the gas flowing out from the atmosphere opening port 191d is increased to 2500 l / min, for example.

  As shown in FIG. 11C, the resist R is further discharged onto the substrate S, and the substrate S is in a state of shielding approximately 75% of the processing stage 27 in the X direction. In this case, the gas ejection pressure and suction pressure are further increased as compared with the case of FIG.

  Therefore, the control unit CONT opens the gas flow rate adjustment valve 191b to further increase the opening degree of the atmosphere opening port 191d. By this operation, the total flow rate of the gas ejected to the processing stage 27 is maintained at 300 l / min, and the flow rate of the gas flowing out from the atmosphere opening port 191d is increased to 2750 l / min, for example.

  From this state, as shown in FIG. 11 (d), the resist R is further discharged onto the substrate S, and the substrate S shields 100% of the processing stage 27 in the X direction. In this case, the gas ejection pressure and suction pressure are further increased as compared with the case of FIG.

  Therefore, the control unit CONT opens the gas flow rate adjustment valve 191b to further increase the opening degree of the atmosphere opening port 191d. By this operation, the total flow rate of the gas ejected to the processing stage 27 is maintained at 300 l / min, and the flow rate of the gas flowing out from the atmosphere opening port 191d is increased to 3000 l / min, for example.

  Thereafter, as the substrate S moves in the + X direction and the shielding rate of the processing stage 27 decreases, the control unit CONT closes the gas flow rate adjustment valve 191b and decreases the opening of the atmosphere opening port 191d. I will do it. By this operation, the total flow rate of the gas ejected to the processing stage 27 is maintained at 300 l / min.

  When the control unit CONT performs the floating operation of the substrate S, the flow rate of the gas flowing through the atmosphere opening ports 191d and 192d is measured by the flow meters 191c and 192c, and based on the measurement result of the flow meters 191c and 192c, The gas flow rate adjusting valves 191b and 192b may be adjusted.

  In this case, for example, target value data of the flow rate of the gas flowing through the atmosphere opening ports 191d and 192d is stored in the control unit CONT, and the control unit CONT controls the gas flow rate adjusting valve 191b so that the measurement result matches the target value data. , 192b is controlled. The target value data can be obtained in advance by experiments or simulations.

Next, the management operation by the management unit 4 will be described.
As described above, the substrate is conveyed to the application unit 3 with a time interval. Therefore, the control unit CONT uses a period during which the substrate is not transported to the coating unit 3 to perform a management operation for maintaining or improving the discharge state of the nozzle 32. The management unit 4 is used for the management operation.

  As shown in FIG. 13, the control unit CONT moves the portal frame 31 to the position of the management unit 4 in the −X direction by the moving mechanism 31 c. After moving the portal frame 31 to the position of the management unit 4, first, the position of the portal frame 31 is adjusted so that the tip of the nozzle 32 is accessed to the nozzle cleaning device 43, and the nozzle cleaning device 43 causes the nozzle tip 32 c to be accessed. Wash.

  After cleaning the nozzle tip 32 c, the nozzle 32 is accessed to the preliminary discharge mechanism 41. The preliminary discharge mechanism 41 moves the opening 32a at the tip 32c of the nozzle 32 to a predetermined position in the Z direction while measuring the distance between the opening 32a and the preliminary discharge surface, and moves the nozzle 32 in the −X direction. The resist is preliminarily discharged from the opening 32a while being moved.

  After performing the preliminary discharge operation, the portal frame 31 is returned to the original position. When the next substrate S is transported, the nozzle 32 is moved to a predetermined position in the Z direction as shown in FIG. In this way, a high-quality resist film R is formed on the substrate S by repeatedly performing the coating operation for applying the resist film R on the substrate S and the preliminary ejection operation.

  If necessary, for example, each time the management unit 4 is accessed a predetermined number of times, the nozzle 32 may be accessed in the dip tank 42. In the dip tank 42, drying of the nozzle 32 is prevented by exposing the opening 32 a of the nozzle 32 to a vapor atmosphere of a solvent (thinner) stored in the dip tank 42.

  As described above, according to the present embodiment, the gas supply path of the gas ejection mechanism 160 and the suction path of the suction mechanism 170 are provided with the atmosphere release portions 191 and 192 that can be opened to the atmosphere. It becomes possible to mitigate a change in at least one of the gas flow rate and the sucked gas flow rate. As a result, it is possible to suppress fluctuations in the flying height of the substrate S.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, the configuration in which the first transport mechanism 60 and the second transport mechanism 61 are each provided with one transport device 60a and 61a has been described, but the present invention is not limited to this.

  As shown in FIG. 15, the first transport mechanism 60 may have a configuration in which three transporters 60 a are provided on a rail 60 c. In addition, although illustration is abbreviate | omitted in FIG. 15, the 2nd conveyance mechanism 61 can also be set as the structure provided with three conveyance machines 61a. In this description, a configuration in which each of the three transporters 60a and 61a is provided is described. However, the present invention is not limited to this, and the transporters 60a and 61a are provided in two or four or more. The configuration can also be applied.

  In the configuration illustrated in FIG. 15, the first transport device 261, the second transport device 262, and the third transport device 263 are sequentially described from the upstream side in the transport direction of the substrate S. Moreover, when naming these collectively, it describes with the conveying machines 261,262,263.

  These transporters 261, 262, and 263 move on the rail 60 c in a synchronized state when the substrate S is transported. Each of the transporters 261, 262, and 263 can move independently on the rail 60c when the substrate S is not transported. According to this configuration, the holding position of the substrate S in each of the transporters 261, 262, and 263 can be arbitrarily set according to the length of the substrate S to be transported.

  The vacuum pad 60b of the transport machine 261 preferably holds within 250 mm from the front end of the substrate S in the transport direction, and preferably within 80 mm. Specifically, the transporter 261 holds the substrate S such that the distance W1 from the front end of the substrate S in the transport direction to the vacuum pad 60b is within 80 mm.

  Further, the vacuum pad 60b of the transport machine 263 preferably holds within 250 mm from the end of the substrate S in the transport direction rear side, and preferably within 80 mm. Specifically, the transporter 263 holds the substrate S so that the distance W2 from the rear end of the substrate S in the transport direction to the vacuum pad 60b is within 80 mm.

  These transporters 261, 262, and 263 hold the substrate S uniformly, prevent the end portion of the substrate from sagging, and allow the large substrate S to be transported in a state of evenly floating. Therefore, unevenness can be prevented from occurring in the film obtained by drying and solidifying the resist applied on the large substrate S.

  Further, in the above-described embodiment, the configuration in which both the gas ejection mechanism 160 and the suction mechanism 170 are provided with the atmosphere opening ports (191, 192) has been described as an example, but the present invention is not limited to this. As long as at least one of the gas ejection mechanism 160 and the suction mechanism 170 is provided with an air opening, it is possible to suppress a change in the flying height of the substrate S compared to the conventional configuration.

  In the above embodiment, when the dimension in the X direction of the processing stage 27 is t1, and the dimension in the X direction of the portion of the substrate S that overlaps the processing stage 27 is t2, the shielding rate of the processing stage 27 is Although the case where rate = (t2 / t1) × 100 (%) has been described as an example, the present invention is not limited to this. For example, when the area of the stage surface 27c of the processing stage 27 in the Z direction is P1, and the area of the substrate S that overlaps the processing stage 27 is P2, the shielding rate = (P2 / P1) × 100 (%). It does not matter.

  CONT ... Control unit S ... Substrate R ... Resist 1 ... Coating device 2 ... Substrate transport unit 3 ... Coating unit 27 ... Processing stage 27c ... Stage surface 27a ... Gas outlet 27b ... Suction port 32 ... Nozzle 160 ... Gas ejection mechanism 160c, 170c ... Piping 170 ... Suction mechanism 191, 192 ... Atmospheric release part 191a, 192a ... Branch piping 191b, 192b ... Gas flow rate adjusting valve 191c, 192c ... Flow meter 191d, 192d ... Atmospheric release port

Claims (9)

An application part having a nozzle for discharging a liquid material from the tip part to the substrate;
A floating portion having a guide surface for guiding the substrate and provided with a gas supply unit and a suction unit for floating the substrate with respect to the guide surface;
A drive unit that drives at least one of the substrate and the nozzle while facing the substrate in a floating state and the tip portion;
The gas supply unit includes a plurality of gas supply ports provided on the guide surface, a gas supply source that supplies gas to the plurality of gas supply ports, and a first gas supply path having one end connected to the gas supply source And a second gas supply path branched from the other end of the first gas supply path and connected to each of the plurality of gas supply ports,
The suction unit includes a plurality of suction ports provided in the guide surface, a suction source that sucks the plurality of suction ports, a first suction path having one end connected to the suction source, and the first suction path A second suction path that is branched from the other end of each of the plurality of suction ports and connected to each of the plurality of suction ports.
At least one of the first gas supply path and the first suction path is provided with an atmosphere opening portion capable of opening to the atmosphere ,
The atmosphere opening portion has a branch path branched from a part of the path,
At the tip of the branch path, an air opening is provided,
The atmosphere opening part is
An adjustment valve capable of adjusting the opening of the atmosphere opening;
And a valve control unit that controls an adjustment amount of the adjustment valve based on a shielding rate that is a ratio of an overlapping portion of the substrate with respect to the guide surface . The coating apparatus according to claim 1 , wherein the atmosphere opening unit includes a flow meter that measures a flow rate of gas flowing through the atmosphere opening. The coating apparatus according to claim 2 , wherein the flow meter measures a flow rate of a gas flowing out from the atmosphere opening to the atmosphere. The open air section is,
Coating apparatus according to claim 2 or claim 3 having a valve control unit for controlling the adjustment amount of the adjusting valve based on the measurement result of the flow meter. The floating part has a stage provided at a position corresponding to the application part,
The coating apparatus according to any one of claims 1 to 4 , wherein the guide surface is provided on the stage. An application part having a nozzle for discharging a liquid material from the tip part to the substrate;
A floating portion having a guide surface for guiding the substrate and provided with a gas supply unit and a suction unit for floating the substrate with respect to the guide surface;
A drive unit that drives at least one of the substrate and the nozzle while facing the substrate in a floating state and the tip portion;
The gas supply unit includes a plurality of gas supply ports provided on the guide surface, a gas supply source that supplies gas to the plurality of gas supply ports, and a first gas supply path having one end connected to the gas supply source And a second gas supply path branched from the other end of the first gas supply path and connected to each of the plurality of gas supply ports,
The suction unit includes a plurality of suction ports provided in the guide surface, a suction source that sucks the plurality of suction ports, a first suction path having one end connected to the suction source, and the first suction path A second suction path that is branched from the other end of each of the plurality of suction ports and connected to each of the plurality of suction ports.
At least one of the first gas supply path and the first suction path is provided with an atmosphere opening portion capable of opening to the atmosphere ,
The atmosphere opening portion has a branch path branched from a part of the path,
At the tip of the branch path is a coating method using a coating device provided with an air opening ,
A gas layer is formed between the substrate and the guide surface through the gas supply port and the suction port by operating the gas supply source and the suction source in a state where a part of the path is opened to the atmosphere. Levitating the substrate over the gas layer;
Moving the substrate and the nozzle relative to each other by driving at least one of the substrate and the nozzle while facing the substrate in a floating state and the tip portion; and
Discharging the liquid material from the tip portion of the nozzle to the substrate while relatively moving the substrate and the nozzle ,
The step of levitating the substrate includes adjusting the opening of the atmosphere opening port based on a shielding rate which is a ratio of an overlapping portion of the substrate with respect to the guide surface.
Application method. The coating method according to claim 6 , wherein the step of floating the substrate includes measuring a flow rate of a gas flowing through the atmosphere opening. The coating method according to claim 7 , wherein the step of floating the substrate includes measuring at least one of a flow rate of gas flowing out from the atmosphere opening port to the atmosphere and a flow rate of gas sucked from the atmosphere. Step for floating said substrate,
In accordance with the flow rate of the measurement results of the gas, The coating method according to claim 7 or claim 8 comprising adjusting the degree of opening of the air release opening.

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