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JP5731897B2 - Electronic volume - Google Patents

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JP5731897B2
JP5731897B2 JP2011105359A JP2011105359A JP5731897B2 JP 5731897 B2 JP5731897 B2 JP 5731897B2 JP 2011105359 A JP2011105359 A JP 2011105359A JP 2011105359 A JP2011105359 A JP 2011105359A JP 5731897 B2 JP5731897 B2 JP 5731897B2
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JP2012238961A (en
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芳嗣 杉本
芳嗣 杉本
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New Japan Radio Co Ltd
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本発明は電子ボリューム、特にメカニカル式スイッチを用いて抵抗を選択する形式の電子ボリュームの特性改善に関する。   The present invention relates to an improvement in characteristics of an electronic volume, in particular, an electronic volume of a type in which a resistance is selected using a mechanical switch.

図5には、従来の重み付け型(方式)の電子ボリュームの回路構成が示されており、この電子ボリューム回路は、信号入力端子1に対して順に、例えば抵抗R21〜R28からなる抵抗群2、この抵抗群2の抵抗(分圧点)を切り替えるためのスイッチS31〜S38からなるスイッチ群3、抵抗R41〜R48からなる抵抗群4、この抵抗群4の抵抗を切り替えるスイッチS51〜S58からなるスイッチ群5、バッファアンプ6が接続され、このバッファアンプ6に信号出力端子7が接続される。   FIG. 5 shows a circuit configuration of a conventional weighted (method) electronic volume. This electronic volume circuit is arranged in order with respect to the signal input terminal 1, for example, a resistance group 2 including resistors R21 to R28, A switch group 3 composed of switches S31 to S38 for switching the resistance (voltage dividing point) of the resistor group 2, a resistor group 4 composed of resistors R41 to R48, and a switch composed of switches S51 to S58 for switching the resistance of the resistor group 4 A group 5 and a buffer amplifier 6 are connected, and a signal output terminal 7 is connected to the buffer amplifier 6.

上記回路では、抵抗群2とスイッチ群3で第1の減衰器が形成され、抵抗群4とスイッチ群5で第2の減衰器が形成されることになり、例えば第1の減衰器で大きな単位、例えば−8dBで変化する減衰量を設定し、第2の減衰器で−1dBよりも大きな単位で変化する減衰量を設定することで、1dBステップで所望の範囲の減衰量を実現することができる。上記電子ボリュームの回路構成において、上記スイッチS31〜S38、S51〜S58に、例えばメカニカル(機械)式スイッチであるMEMS(Micro Electro Mechanical System)スイッチを採用すると、低歪、低雑音の高い性能が期待される。   In the above circuit, the resistor group 2 and the switch group 3 form a first attenuator, and the resistor group 4 and the switch group 5 form a second attenuator. For example, the first attenuator Attenuation in a desired range is realized in 1 dB steps by setting an attenuation that changes in units, for example, -8 dB, and an attenuation that changes in units larger than -1 dB in the second attenuator. Can do. In the circuit configuration of the electronic volume, when a MEMS (Micro Electro Mechanical System) switch, which is a mechanical switch, is employed as the switches S31 to S38 and S51 to S58, high performance with low distortion and low noise is expected. Is done.

特開2005−184055号公報JP 2005-184055 A

しかしながら、図5の電子ボリュームのように、スイッチS31〜S38、S51〜S58として、メカニカル式スイッチを用いる場合には、ヒステリシス特性を持つことから、スイッチがオンする電圧とオフする電圧にばらつき(応答のばらつき)が生じ易く、また瞬間的にオープンになる場合があり、これによってポップ音が生じるという問題がある。上記の瞬間的なオープンに対し、スイッチの制御時間をコントロールしてこの状態を作らない方法も考えられるが、この場合には、2つのスイッチが同時にオンする時間(オン抵抗)が発生し、場合によっては音量変化に違和感が生じる。   However, in the case of using mechanical switches as the switches S31 to S38 and S51 to S58 as in the electronic volume of FIG. 5, since there are hysteresis characteristics, there are variations in the voltage at which the switch is turned on and the voltage at which it is turned off (response Variation), and may be opened instantaneously, which causes a problem of pop noise. In contrast to the momentary opening described above, there may be a method that does not create this state by controlling the switch control time. In this case, however, there is a time (on resistance) when two switches are turned on at the same time. Depending on the situation, the volume change may be uncomfortable.

本発明は上記問題点に鑑みてなされたものであり、その目的は、メカニカル式スイッチの切換え時の応答のばらつきや瞬間的なオープン状態によるポップ音の発生をなくすことを可能とした電子ボリュームを提供することにある。   The present invention has been made in view of the above problems, and an object of the present invention is to provide an electronic volume that can eliminate variations in responses when switching mechanical switches and the occurrence of pop sounds due to instantaneous open states. It is to provide.

上記目的を達成するために、請求項1に係る発明は、抵抗群及びこの抵抗群の抵抗を選択するためのメカニカル式スイッチ群からなる減衰器を含み、この減衰器からの信号を増幅器へ供給してなる電子ボリュームにおいて、上記メカニカル式スイッチ群の各スイッチに対し並列に電子式スイッチを接続し、この電子式スイッチを上記メカニカル式スイッチよりも先にオンさせ、かつ上記メカニカル式スイッチよりも後にオフさせるように制御することを特徴とする。
請求項2に係る発明は、上記メカニカル式スイッチとして、MEMSスイッチを使用することを特徴とする。
In order to achieve the above object, the invention according to claim 1 includes an attenuator comprising a resistor group and a mechanical switch group for selecting a resistance of the resistor group, and supplies a signal from the attenuator to the amplifier. In the electronic volume, the electronic switch is connected in parallel to each switch of the mechanical switch group, the electronic switch is turned on before the mechanical switch, and after the mechanical switch. Control is made to turn off.
The invention according to claim 2 is characterized in that a MEMS switch is used as the mechanical switch.

上記の構成によれば、例えば第1の減衰器と第2の減衰器からなる重み付け型の回路において、メカニカル式スイッチとして、例えばMEMSスイッチが配置され、このMEMSスイッチに対して電子式スイッチとしてのMOSスイッチが並列に接続されることになり、このMOSスイッチは例えばMEMSスイッチより早いタイミングでオンされ、MEMSスイッチより遅いタイミングでオフされる。   According to the above configuration, for example, a MEMS switch is disposed as a mechanical switch in a weighted circuit including, for example, a first attenuator and a second attenuator, and the MEMS switch serves as an electronic switch. The MOS switches are connected in parallel. For example, the MOS switches are turned on at an earlier timing than the MEMS switches, and are turned off at a later timing than the MEMS switches.

本発明の電子ボリュームによれば、メカニカル式スイッチ(MEMSスイッチ)のヒステリシス特性があっでも、電子式スイッチ(MOSスイッチ)を先にオンさせた後にメカニカル式スイッチをオンさせるので、瞬間的なオープンの時間がない形で切り替えを行うことができ、しかも電子スイッチは応答速度のばらつきもないので、ポップ音の発生をなくすことができる。また、電子スイッチによって高速のスイッチ動作ができるので、2つのスイッチが同時にオンする時間もなく、音量を変化させても聴感的な違和感は発生しない。   According to the electronic volume of the present invention, even if there is a hysteresis characteristic of the mechanical switch (MEMS switch), the mechanical switch is turned on after the electronic switch (MOS switch) is turned on first. Switching can be performed in a timeless manner, and since the electronic switch does not vary in response speed, pop noise can be eliminated. In addition, since the high-speed switch operation can be performed by the electronic switch, there is no time for the two switches to be turned on at the same time.

更に、重み付け型の回路では、第2の減衰器の抵抗を大きくすることなく、第1の減衰器のスイッチの歪が現れることもないので、変動のない減衰精度で、低歪、低雑音の動作を実現することが可能となる。
また、MOSスイッチも最小ルールの小型のスイッチを使用できるので、チップ内の実装面積を少なくでき、寄生容量の影響によるポップ音の影響も少なくなる等の利点もある。
Furthermore, in the weighted circuit, since the distortion of the switch of the first attenuator does not appear without increasing the resistance of the second attenuator, low distortion and low noise can be achieved with an attenuation accuracy without fluctuation. The operation can be realized.
In addition, since the MOS switch can be a small switch with a minimum rule, there are advantages such that the mounting area in the chip can be reduced and the influence of pop noise due to the influence of parasitic capacitance is reduced.

更に、メカニカル式スイッチとしてMEMSスイッチとした場合には、低歪、低雑音が実現できるだけでなく、小型化も可能になるという利点がある。   Further, when a MEMS switch is used as a mechanical switch, there is an advantage that not only low distortion and low noise can be realized, but also miniaturization is possible.

本発明の第1実施例に係る電子ボリューム(重み付け型)の構成を示す回路図である。It is a circuit diagram which shows the structure of the electronic volume (weighting type) based on 1st Example of this invention. 実施例の1組のスイッチの構成図[図(A)]及びそのスイッチの動作図[図(B),(C)]である。FIG. 2 is a configuration diagram [FIG. (A)] of a set of switches and an operation diagram [FIGS. 実施例の2組のスイッチの動作を示す図である。It is a figure which shows operation | movement of 2 sets of switches of an Example. 第2実施例の電子ボリューム(ラダー型)の構成を示す回路図である。It is a circuit diagram which shows the structure of the electronic volume (ladder type) of 2nd Example. 従来の電子ボリューム(重み付け型)の構成を示す回路図である。It is a circuit diagram which shows the structure of the conventional electronic volume (weighting type).

図1には、本発明の第1実施例に係る重み付け型電子ボリュームの構成が示されており、この実施例では、図5の場合と同様に、信号入力端子1に対して順に、抵抗群2及びスイッチ群30からなる第1の減衰器、抵抗群4及びスイッチ群50からなる第2の減衰器が直列に接続され、上記スイッチ群50の出力側がバッファアンプ6を介して信号出力端子に接続される。上記抵抗群2として、信号ラインと接地間に例えば抵抗R21〜R28が直列接続され、これらの抵抗R21〜R28の各接続点(分圧点)を切替え選択できるように、メカニカル式スイッチであるMEMS(Micro Electro Mechanical System)スイッチS31a〜S38aが接続され、このMEMSスイッチS31a〜S38aのそれぞれに対して並列に電子式スイッチとしてのMOS(Metal-Oxide-Semiconductor)スイッチS31b〜S38bが接続される。   FIG. 1 shows the configuration of a weighted electronic volume according to the first embodiment of the present invention. In this embodiment, as in the case of FIG. 2 and a first attenuator comprising a switch group 30 and a second attenuator comprising a resistor group 4 and a switch group 50 are connected in series, and the output side of the switch group 50 is connected to a signal output terminal via a buffer amplifier 6. Connected. As the resistor group 2, for example, resistors R21 to R28 are connected in series between the signal line and the ground, and the MEMS is a mechanical switch so that each connection point (voltage dividing point) of these resistors R21 to R28 can be switched and selected. (Micro Electro Mechanical System) switches S31a to S38a are connected, and MOS (Metal-Oxide-Semiconductor) switches S31b to S38b as electronic switches are connected in parallel to the MEMS switches S31a to S38a.

また、上記抵抗群4として、信号ラインと接地間に例えば抵抗R41〜R48が直列接続され、これらの抵抗R41〜R48の各接続点(分圧点)を切替え選択できるように、MEMSスイッチS51a〜S58aが接続され、このMEMSスイッチS51a〜S58aのそれぞれに対して並列に電子式スイッチとしてのMOSスイッチS51b〜S58bが接続される。   Further, as the resistor group 4, for example, resistors R41 to R48 are connected in series between the signal line and the ground, and the MEMS switches S51a to S51a are configured so that the connection points (voltage dividing points) of these resistors R41 to R48 can be switched and selected. S58a is connected, and MOS switches S51b to S58b as electronic switches are connected in parallel to the MEMS switches S51a to S58a.

図2(B),(C)には、例えば抵抗群2の抵抗を選択するための図2(A)の1組のスイッチ31a,31bの動作が示されており、MOSスイッチ31bは、MEMSスイッチ31aのオン(ON)よりも早いタイミングでオンさせ、MEMSスイッチ31aのオフ(OFF)よりも遅いタイミングでオフさせるように制御される。   2B and 2C show the operation of a set of switches 31a and 31b in FIG. 2A for selecting the resistance of the resistor group 2, for example. The MOS switch 31b is a MEMS switch. Control is performed so that the switch 31a is turned on at an earlier timing than the switch 31a is turned on and turned off at a later timing than the MEMS switch 31a is turned off.

実施例は以上の構成からなり、例えば図1の第1の減衰器の抵抗群2において、信号線と抵抗R21の接続点eを選択した後、抵抗R21と抵抗R22の接続点eへ切り替える場合は、図3の(A)〜(D)に示されるように、まず電子式のMOSスイッチS31bをオンさせ、その後にメカニカル式のMEMSスイッチ31aをオンさせることで、接続点eが選択され、切替え時には、MEMSスイッチ31aをオフした後にMOSスイッチ31bをオフさせると同時に、MOSスイッチ32bをオンさせ、その後、MEMSスイッチ32aをオンさせることで、接続点eが選択される。また、この接続点eの選択を解除する場合も、MEMSスイッチ32aをオフした後にMOSスイッチ32bをオフさせる。このようなスイッチ動作は、第2の減衰器においても同様に行われ、スイッチ群50のMOSスイッチ51b〜58bをMEMSスイッチS51a〜58aよりも早いタイミングでオンさせ、遅いタイミングでオフさせることにより、抵抗群4の抵抗が選択される。 Embodiment has the above configuration, for example, in the first attenuator resistor group 2 of FIG. 1, after selecting the connection point e 1 between the signal line resistor R21, to the connection point e 2 of the resistor R21 resistor R22 to switch, as shown in (a) ~ (D) of FIG. 3, first, to turn on the MOS switches S31b of electronic, by subsequently turning on the MEMS switch 31a of the mechanical type, the connection point e 1 is selected, the time switch, and at the same time to turn off the MOS switch 31b after turning off the MEMS switches 31a, the MOS switch 32b is turned on, then, by turning on the MEMS switch 32a, the connection point e 2 is selected. Further, even when canceling the selection of the connection point e 2, to turn off the MOS switch 32b after turning off the MEMS switch 32a. Such a switch operation is similarly performed in the second attenuator, and the MOS switches 51b to 58b of the switch group 50 are turned on at an earlier timing than the MEMS switches S51a to 58a and turned off at a later timing. The resistance of the resistance group 4 is selected.

このような構成及び動作によれば、メカニカル式のMEMSスイッチS31a〜S38a,S51a〜S58aが持つヒステリシス特性の影響、応答速度のばらつきによる影響がなくなり、しかもメカニカル式のスイッチで生じていた瞬間的なオープンの時間もなく、ポップ音の発生を低減することが可能となる。また、電子式のMOSスイッチS31b〜S38b,S51b〜S58bによって高速のスイッチ動作が行われるので、2つのスイッチが同時にオンする時間もなく、音量を変化させても聴感的な違和感を生じさせることがない。即ち、メカニカル式(MEMS)スイッチの利点と電子式(MOS)スイッチの利点を生かすことができる。   According to such a configuration and operation, the influence of the hysteresis characteristics of the mechanical MEMS switches S31a to S38a, S51a to S58a and the influence due to the variation in response speed are eliminated, and the instantaneous effect that has occurred in the mechanical switch. It is possible to reduce the occurrence of pop sounds without opening time. Further, since the high-speed switch operation is performed by the electronic MOS switches S31b to S38b, S51b to S58b, there is no time for the two switches to be turned on at the same time, and no audible discomfort is caused even if the volume is changed. . That is, the advantages of the mechanical (MEMS) switch and the electronic (MOS) switch can be utilized.

更に、第1実施例の回路では、第2の減衰器の抵抗群4の抵抗値を大きくする必要もなく、第1の減衰器のMEMSスイッチS31a〜S38のオン抵抗によって減衰精度が変動することも防止でき、またMEMSスイッチS31a〜S38aの歪が現れることもないので、低歪が実現できるという利点がある。また、小型のMOSスイッチを使用するので、チップ内の実装面積を少なくでき、チャージインジェクションの影響も小さくなる。   Furthermore, in the circuit of the first embodiment, it is not necessary to increase the resistance value of the resistance group 4 of the second attenuator, and the attenuation accuracy varies depending on the ON resistance of the MEMS switches S31a to S38 of the first attenuator. Since there is no occurrence of distortion of the MEMS switches S31a to S38a, there is an advantage that low distortion can be realized. Further, since a small MOS switch is used, the mounting area in the chip can be reduced and the influence of charge injection is also reduced.

図4には、第2実施例に係るラダー型電子ボリュームの構成が示されており、この実施例では、信号ラインと接地間に抵抗R81〜R88からなる抵抗群8が接続され、この抵抗R87とR88の接続点に、抵抗群9の抵抗R91〜R98が直列に接続される。そして、これらの抵抗群8,9の各抵抗の接続点を切替え選択できるように、メカニカル式のMEMSスイッチS31a〜S38a,S51a〜S58aが接続され、これらのMEMSスイッチS31a〜S38a,S51a〜S58aのそれぞれに対して並列に電子式のMOSスイッチS31b〜S38b(スイッチ群30),S51b〜S58b(スイッチ群50)が接続される。   FIG. 4 shows the configuration of a ladder type electronic volume according to the second embodiment. In this embodiment, a resistor group 8 consisting of resistors R81 to R88 is connected between the signal line and the ground, and the resistor R87. And R88 are connected in series to resistors R91 to R98 of the resistor group 9. Then, mechanical MEMS switches S31a to S38a and S51a to S58a are connected so that the connection points of the resistors of these resistor groups 8 and 9 can be switched and selected, and the MEMS switches S31a to S38a and S51a to S58a are connected. Electronic MOS switches S31b to S38b (switch group 30) and S51b to S58b (switch group 50) are connected in parallel with each other.

このような第2実施例でも、第1実施例と同様に、スイッチ群30のMOSスイッチS31b〜S38b及びMOSスイッチ51b〜58bを、MEMSスイッチS31a〜S38a及びスイッチ群50のMEMSスイッチS51a〜58aよりも早いタイミングでオンさせ、遅いタイミングでオフさせることにより、両抵抗群8,9における各抵抗の接続点が選択され、ヒステリシス特性の影響、応答速度のばらつきによる影響、瞬間的なオープンの時間をなくして、ポップ音の発生を低減することが可能となる。   In the second embodiment, similarly to the first embodiment, the MOS switches S31b to S38b and the MOS switches 51b to 58b of the switch group 30 are replaced by the MEMS switches S31a to S38a and the MEMS switches S51a to 58a of the switch group 50. By turning on at an early timing and turning off at a late timing, the connection point of each resistor in both resistance groups 8 and 9 is selected, and the effect of hysteresis characteristics, the effect of variation in response speed, and the instantaneous open time As a result, the occurrence of pop sounds can be reduced.

上記実施例では、メカニカル式スイッチとしてMEMSスイッチを用いたが、その他のメカニカルスイッチを適用することができ、また電子式スイッチとしてMOSスイッチを用いたが、その他のトランジスタスイッチを適用してもよい。   In the above embodiment, the MEMS switch is used as the mechanical switch. However, other mechanical switches can be applied, and the MOS switch is used as the electronic switch. However, other transistor switches may be applied.

2,4,8,9…抵抗群、
3,5,30,50…スイッチ群、
6…バッファアンプ、
R21〜R28,R41〜R48,R81〜R88,R91〜R98…抵抗、
S31〜S38,S31a〜S38a…MEMSスイッチ、
S51〜S58,S51a〜S58a…MEMSスイッチ、
S31b〜S38b…MOSスイッチ、
S51b〜S58b…MOSスイッチ。
2, 4, 8, 9 ... resistance group,
3, 5, 30, 50 ... switch group,
6 ... buffer amplifier,
R21 to R28, R41 to R48, R81 to R88, R91 to R98 ... resistors,
S31-S38, S31a-S38a ... MEMS switch,
S51-S58, S51a-S58a ... MEMS switch,
S31b-S38b ... MOS switch,
S51b to S58b: MOS switches.

Claims (2)

抵抗群及びこの抵抗群の抵抗を選択するためのメカニカル式スイッチ群からなる減衰器を含み、この減衰器からの信号を増幅器へ供給してなる電子ボリュームにおいて、
上記メカニカル式スイッチ群の各スイッチに対し並列に電子式スイッチを接続し、この電子式スイッチを上記メカニカル式スイッチよりも先にオンさせ、かつ上記メカニカル式スイッチよりも後にオフさせるように制御することを特徴とする電子ボリューム。
In an electronic volume comprising an attenuator comprising a resistor group and a mechanical switch group for selecting the resistance of the resistor group, and supplying a signal from the attenuator to the amplifier,
Said connecting an electronic switch in parallel with respect to each of the switches of the mechanical type switches, the electronic switch is turned on earlier than the mechanical switch, and performs control so as to turn off later than the mechanical switch that Features an electronic volume.
上記メカニカル式スイッチとして、MEMSスイッチを使用することを特徴とする請求項1記載の電子ボリューム。   2. The electronic volume according to claim 1, wherein a MEMS switch is used as the mechanical switch.
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