JP5812753B2 - Film forming apparatus and film forming method - Google Patents

Description

  The present invention relates to a film forming apparatus and a film forming method.

  Organic EL elements are attracting attention for use in display devices and lighting equipment because they have high luminous efficiency and can assemble thin light-emitting devices. Currently, organic EL elements of a predetermined shape are formed on the surface of large-area film-forming objects. There is a need for a technique for precisely forming a thin film.

FIG. 10 is an internal side view of a conventional film forming apparatus 100.
The conventional film forming apparatus 100 includes a vacuum chamber 111 and a discharge port 122, a discharge device 121 that discharges thin film material vapor into the vacuum chamber 111 from the discharge port 122, and a thin film material vapor discharged from the discharge device 121. And a mask 131 provided with a plurality of passage holes 132 through which the gas passes.

  When the discharge device 121 is heated to heat the solid or liquid thin film material 141 disposed in the discharge device 121, a thin film material vapor is generated from the thin film material 141, and the generated thin film material vapor is vacuumed from the discharge port 122. It is discharged into the tank 111.

  A square ring-shaped mask holding member 136 is disposed above the discharge device 121, and the mask 131 is horizontally disposed on the mask holding member 136. The outer peripheral portion of the mask 131 is supported in close contact with the mask holding member 136, and the passage hole 132 of the mask 131 is exposed inside the ring of the mask holding member 136.

  When the thin film material vapor is released from the discharge port 122, the released thin film material vapor passes through the passage hole 132 of the mask 131 and reaches the surface of the film formation target 142 arranged at a position facing the mask 131. Then, a thin film having the same shape as the passage hole 132 is formed on the surface of the film formation target 142.

  In the conventional film forming apparatus 100, the passage holes 132 are uniformly arranged inside the ring of the mask holding member 136 in the mask 131. Therefore, when the mask 131 is increased in size with the increase in the area of the film formation target 142, the number of the passage holes 132 is increased, the area occupied by the passage holes 132 in the mask 131 is increased, and the strength of the mask 131 is increased. There was a problem of lowering.

  Further, the mask 131 is supported in close contact with a rectangular ring-shaped mask holding member 136 at the outer periphery, and when the mask 131 is enlarged, the distance between two opposing sides of the outer periphery of the mask 131 increases. There is a problem that the central portion of the mask 131 is bent by gravity.

  Further, when the temperature of the mask 131 rises due to the thermal radiation from the emission device 121 during the thin film formation, the mask 131 is thermally expanded, and the passage hole 132 is displaced from the required position and formed on the surface of the film formation target 142. As a result, the outline of the thin film becomes unclear or the thin film is misaligned. Therefore, it is necessary to cool the mask 131 during film formation.

  In the conventional film forming apparatus 100, the flow path member 138 is provided in close contact with the surface of the mask holding member 136 that is opposite to the surface that is in close contact with the mask 131, and temperature control is performed on the flow path 139 inside the flow path member 138. The mask 131 was cooled by the heat conduction from the flow path member 138 by flowing the heat transfer medium.

  However, although the outer peripheral portion of the mask 131 that is in close contact with the mask holding member 136 is easily cooled, the central portion of the mask 131 is difficult to cool, particularly in the large-sized mask 131, and it is difficult to suppress the thermal expansion of the central portion. there were.

  In addition, when the temperature of the heat transfer medium flowing through the flow path 139 is lowered to cool the central portion of the mask 131, thermal contraction occurs in the outer peripheral portion of the mask 131, and the passage hole 132 is displaced from a required position, so that the film formation target 142 There is a problem that the outline of the thin film formed on the surface of the film becomes unclear or the thin film is displaced.

JP 2002-008859 A

  The present invention was created to solve the above-described disadvantages of the prior art, and an object of the present invention is to form a film forming apparatus and a film forming apparatus capable of forming a film on a large area without reducing the strength of the mask. It is to provide a method.

In order to solve the above problems, the present invention provides a vacuum chamber, a discharge port, a discharge device that discharges a thin film material vapor into the vacuum chamber from the discharge port, and the thin film material discharged from the discharge device. A mask provided with a plurality of passage holes through which the vapor passes, and the thin film material vapor that has passed through the passage holes reaches a film formation target disposed at a position facing the mask to form the film. A film forming apparatus for forming a thin film on a surface of an object, wherein the mask includes an effective area in which the passage hole is disposed, and a shielding area that shields the thin film material vapor, and the effective area and the The shielding area is a quadrangular shape having a length direction and a width direction orthogonal to the length direction, and the effective area and the shielding area are adjacent to each other along the width direction of the effective area. a plurality are arranged alternately, the mass Said discharge device to a, the film-forming target, the effective and first mobile device region and the shielding region are relatively moved in a direction aligned, are in close contact with the shielding area, the outer periphery of the mask and a mask holding member for supporting the central portion bent in part and gravity, have a, a second moving device for moving the discharge device, while the mask in the mask holding member is supported, said second After the discharge port for discharging the thin film material vapor is moved by the moving device and the thin film is formed in the first film formation region facing the effective region among the surfaces of the film formation target, the second film is formed. The discharge port is arranged outside the range facing the mask by the moving device, and the first film formation facing the effective area of the film formation object by the first moving device. The area faces the shielding area The second film formation region facing the shielding region is relatively moved to the effective region, and the thin film material vapor is moved by the second moving device. The film forming apparatus is configured such that the discharge port for discharging the film is moved and a thin film is formed in the second film forming region facing the effective region of the surface of the film forming target .
The present invention provides a film deposition apparatus, the second mobile device, relative to the mask, the discharge device, wherein a relatively moved so Ru film forming apparatus wherein the length of the effective region.
This invention is a film-forming apparatus, Comprising: The said discharge port is a film-forming apparatus arrange | positioned on the extension line along the said length direction of the position which faces the said effective area | region.
The present invention includes a vacuum chamber, a discharge port, a discharge device that discharges thin film material vapor from the discharge port into the vacuum chamber, and a plurality of passages through which the thin film material vapor discharged from the discharge device passes. The thin film material vapor that has passed through the passage hole reaches a film formation target disposed at a position facing the mask, and the thin film is formed on the surface of the film formation target. In the film forming apparatus to be formed, the mask includes an effective area in which the passage hole is disposed and a shielding area that shields the thin film material vapor, and the effective area and the shielding area are in a length direction. And a rectangular shape having a width direction orthogonal to the length direction, and a plurality of the effective regions and the shielding regions are alternately arranged adjacent to each other along the width direction of the effective region. , Against the mask and the discharge device A first moving device that relatively moves the film formation target in a direction in which the effective area and the shielding area are aligned, and a central part that is in close contact with the shielding area and is bent by the gravity of the mask. A film holding method having a mask holding member that supports the second release device and a second moving device that moves the discharge device , wherein the thin film material vapor is generated by the second moving device. moving the outlet to release, the a first film forming step of forming the thin film on the first film-forming region facing said active area of the surface of the object to be film-formed, the second mobile device The discharge port is arranged outside the range facing the mask, and the first film forming object is used to position the first film formation region facing the effective region among the film formation objects by the first moving device. Moved relative to the position facing the shielding area In addition, in the effective area, the second film formation area facing the shielding area is relatively moved, and the second movement device releases the thin film material vapor. A second film forming step of moving the outlet and forming a thin film in the second film forming region facing the effective region of the surface of the film forming object, and the first film forming During the process, the moving process, and the second film forming process, the mask holding member supports the mask with the mask holding member.
The present invention relates to a film forming method, wherein in the first and second film forming steps, the discharge device is moved relative to the mask and the object to be formed in the length direction of the effective region. It is the film-forming method moved to (1).

  Since the strength of the mask is higher than that of a conventional mask, the possibility of damage to the mask is reduced even if the mask is enlarged, and film formation on a large-area film formation target is facilitated.

The internal side view of the film-forming apparatus of the 1st example of this invention The internal top view of the film-forming apparatus of the 1st example of this invention (A)-(c): The figure for demonstrating the film-forming method using the film-forming apparatus of the 1st and 3 examples. The internal side view of the film-forming apparatus of the 2nd example of this invention The internal top view of the film-forming apparatus of the 2nd example of this invention Internal side view of second example film forming apparatus having another structure with discharge device Partial enlarged view of the mask (A)-(e): The figure for demonstrating the film-forming method using the film-forming apparatus of a 2nd example. The internal top view of the film-forming apparatus of the 3rd example of this invention Internal side view of a conventional film deposition system

<Structure of film forming apparatus of first example>
The structure of the film forming apparatus of the first example of the present invention will be described.
FIG. 1 is an internal side view of the film forming apparatus 10a of the first example, and FIG. 2 is an internal plan view thereof.

  The film forming apparatus 10 a of the first example is provided with a vacuum chamber 11 and a discharge port 22, a discharge device 21 that discharges thin film material vapor into the vacuum chamber 11 from the discharge port 22, and a thin film discharged from the discharge device 21. And a mask 31 provided with a plurality of passage holes 32 through which the material vapor passes.

  Here, the discharge device 21 is an elongated hollow container, and is disposed in the vacuum chamber 11 with its longitudinal direction oriented horizontally. A solid or liquid thin film material 41 is disposed inside the discharge device 21.

  A linear heater 25 is wound around and attached to the outer periphery of the discharge device 21, and a heating power source 26 is electrically connected to the heater 25. In FIG. 2, the heater 25 and the heating power source 26 are not shown.

  When a current is supplied from the heating power supply 26 to the heater 25, the heater 25 generates heat, the discharge device 21 is heated by heat conduction, the thin film material 41 in the discharge device 21 is heated, and the thin film material 41 is vaporized from the thin film material 41. Is generated.

  A plurality of discharge ports 22 are provided along the longitudinal direction on the surface facing the upper side of the discharge device 21, and the thin film material vapor generated in the discharge device 21 passes through each discharge port 22 to form the vacuum chamber 11. It is designed to be released inside.

  A mask holding member 36 provided with an opening 37 is arranged above the discharge device 21, the mask 31 is horizontally arranged on the mask holding member 36, and the passage hole 32 of the mask 31 is an opening of the mask holding member 36. 37 is arranged to face.

  When the discharge device 21 is disposed at a position facing the surface facing the lower side of the mask 31, the thin film material vapor discharged from the discharge port 22 passes through the opening 37 of the mask holding member 36 and the passage hole 32 of the mask 31. The thin film is formed on the surface of the film formation target object 42 by sequentially passing through and reaching the surface of the film formation target object 42 disposed at a position facing the surface facing upward of the mask 31.

In the present invention, the mask 31 has effective areas 33 _{1 to} 33 ₃ in which the passage holes 32 are disposed, and shielding areas 34 _{1 to} 34 ₄ that shield the thin film material vapor.
The effective regions 33 _{1 to} 33 ₃ and the shielding regions 34 _{1 to} 34 ₄ have a rectangular shape having a length direction and a width direction orthogonal to the length direction, and the lengths of the shielding regions 34 _{1 to} 34 _{4 in} the width direction. The effective area 33 _{1 to} 33 ₃ is longer than the length in the width direction, and the effective area 33 _{1 to} 33 ₃ and the shielding area 34 _{1 to} 34 ₄ are along the width direction of the effective area 33 _{1 to} 33 _3. Are arranged adjacent to each other. Therefore, the area occupied by the passage holes 32 in the mask 31 is smaller than that of the conventional mask 131 (see FIG. 10), and the strength of the mask 31 is higher than that of the conventional mask 131.

Hereinafter, the length direction and the width direction of the effective regions 33 _{1 to} 33 ₃ are referred to as “length direction” and “width direction”, and are described with reference numerals 5 and 6.
In this embodiment, the effective areas 33 _{1 to} 33 ₃ and the shielding areas 34 _{1 to} 34 ₄ are alternately arranged in the mask 31, and the mask holding member 36 faces the shielding areas 34 _{1 to} 34 _4. Are arranged in close contact with the shielding regions 34 _{1 to} 34 ₄ . Therefore, not only the outer peripheral portion but also the central portion of the mask 31 is supported by the mask holding member 36, and even if the mask 31 is enlarged, the central portion of the mask 31 is not bent downward due to gravity.

In the film forming apparatus 10a of the first example, with respect to the mask 31 and the discharge apparatus 21, the film formation target 42 is arranged in a direction in which the effective regions 33 _{1 to} 33 ₃ and the shielding regions 34 _{1 to} 34 ₄ are arranged (that is, the width direction). 6) has the first moving device 51 to move relatively.

That is, the film forming apparatus 10a of the first example arranges the film formation target 42 and the mask 31 so as to face each other, and the first film formation region of the film formation target 42 faces the effective areas 33 _{1 to} 33 _3. Then, after the second film formation region is made to face the shielding regions 34 _{1 to} 34 ₄ , the film formation target 42 is moved relative to the mask 31 and the emission device 21, and the second film formation region Has a first moving device 51 that faces the effective areas 33 _{1 to} 33 ₃ .

  Here, the first moving device 51 includes a rod-shaped arm member 51a vertically disposed above the mask 31, and an arm member moving device 51b that moves the arm member 51a in the vertical direction and the horizontal direction, respectively. ing. A convex portion 51c protruding in the horizontal direction is provided at the lower end of the arm member 51a. In FIG. 2, the illustration of the first moving device 51 is omitted.

The operation of the first moving device 51 will be described. First, the film formation target 42 and the mask 31 are arranged to face each other, and the first film formation region of the film formation target 42 is an effective region 33 _{1 to} 33 _3. With the second film formation region facing the shielding regions 34 _{1 to} 34 ₄ , the arm member moving device 51 b moves the arm member 51 a to the outside from the outer periphery of the film formation target 42, so that the arm The member 51a is lowered and the convex portion 51c is positioned below the surface of the film formation target 42. Next, when the arm member 51a is moved horizontally in a direction approaching the film formation target 42 so that the convex portion 51c is opposed to the surface of the film formation target 42 and then the arm member 51a is raised, the convex portion 51c is formed. In contact with the outer peripheral portion of the surface of the film object 42, the film formation object 42 is placed on the convex portion 51 c and separated from the mask 31. Next, when the arm member 51a is moved in the direction in which the effective regions 33 _{1 to} 33 ₃ and the shielding regions 34 _{1 to} 34 ₄ are arranged, the film formation target 42 placed on the convex portion 51c is also moved in the same direction. . When the film formation target 42 is stopped at a position where the second film formation region faces the effective regions 33 _{1 to} 33 ₃ , the arm member 51 a is lowered, and the convex portion 51 c is moved below the mask 31, The film object 42 contacts the mask 31 and is placed on the mask 31, and is separated from the convex portion 51c.

In this way, the film formation target 42 is moved relative to the mask 31 and the emission device 21 in the direction in which the effective areas 33 _{1 to} 33 ₃ and the shielding areas 34 _{1 to} 34 ₄ are arranged.
The first moving device 51 moves the film formation target 42 relative to the mask 31 and the discharge device 21 in the direction in which the effective regions 33 _{1 to} 33 ₃ and the shielding regions 34 _{1 to} 34 ₄ are arranged. The structure is not limited to the above as long as it can be moved.
Here, the width direction 6 of the effective regions 33 _{1 to} 33 ₃ is directed parallel to the longitudinal direction of the discharge device 21.

In the present embodiment, the film forming apparatus 10 a of the first example includes a second moving device 53 that moves the discharge device 21 relative to the mask 31 in the length direction 5 of the effective regions 33 _{1 to} 33 _3. Have.
Here, the second moving device 53 includes a rail 53a extending along the length direction 5 and a movable portion 53b disposed on the rail 53a.

The rail 53a is provided with a plurality of fixed electromagnets (not shown) arranged at equal intervals along the length direction 5, and the movable portion 53b is provided with a movable magnet (not shown).
When the magnetic poles of the fixed electromagnet are sequentially changed along the length direction 5, a moving force parallel to the length direction 5 is applied to the movable magnet, and the movable portion 53 b is moved along the length direction 5.

The discharge device 21 is fixed to the movable portion 53b. When the movable portion 53b is moved in the length direction 5, the discharge device 21 is also moved in the length direction 5 together with the movable portion 53b. When the discharge device 21 is moved in the length direction 5 at a predetermined speed, a uniform amount of the thin film material vapor reaches the effective regions 33 _{1 to} 33 ₃ of the mask 31 along the length direction 5. A thin film having a uniform film thickness can be formed along the length direction 5 on the surface of the film formation target 42.

If a uniform amount of thin film material vapor can reach the effective regions 33 _{1 to} 33 ₃ of the mask 31 along the length direction 5, a plurality of discharge devices 21 are arranged along the length direction 5. The second moving device 53 may be omitted.

In the present embodiment, the discharge port 22 is disposed on an extension line along the length direction 5 of the position facing the effective areas 33 _{1 to} 33 _3, and the length direction of the position facing the shielding areas 34 _{1 to} 34 _4. It is not arranged on the extension line along 5.

When the discharge device 21 is moved along the length direction 5 by the second moving device 53, the discharge port 22 moves within the range facing the effective regions 33 _{1 to} 33 _3, and the shielding regions 34 _{1 to} 34 _4. The thin film material vapor discharged from the discharge port 22 reaches the film formation target 42 through the passage holes 32 of the effective regions 33 _{1 to} 33 ₃ and does not protrude into the range facing the surface, and the shielding region 34 _1. or wasted to reach the -34 _4, it has been prevented from becoming a cause of dust.

A flow path member 38 is disposed in close contact with the surface of the mask holding member 36 opposite to the surface in close contact with the shielding regions 34 _{1 to} 34 ₄ .
A flow path 39 is provided inside the flow path member 38, and a heat transfer medium introduction section 46 a and a heat transfer medium discharge section 46 b are connected to the flow path 39. When a heat transfer medium whose temperature is controlled is introduced into the flow path 39 from the heat transfer medium introduction section 46a, and the heat transfer medium flowing in the flow path 39 is discharged from the heat transfer medium discharge section 46b, heat from the heat transfer medium is obtained. The channel member 38 is heated or cooled to the same temperature as the heat transfer medium by conduction, and the mask holding member 36 that is in close contact with the flow path member 38 and the mask 31 that is in close contact with the mask holding member 36 are also heated or heated to the same temperature as the heat transfer medium. To be cooled.

The channel member 38 is located within a range facing the shielding region 34 _{1-34 4,} not protruding in the range facing the effective region 33 _to 333, is incident on the effective area 33 _to 333 The thin film material vapor is not blocked by the flow path member 38.

The effective areas 33 _{1 to} 33 ₃ and the shielding areas 34 _{1 to} 34 ₄ are alternately arranged, that is, the effective areas 33 _{1 to} 33 ₃ and the flow path member 38 are alternately arranged. Therefore, the distance between the center of the effective regions 33 _{1 to} 33 ₃ and the flow path member 38 is shorter than the conventional mask 131 (see FIG. 10), and the heating or cooling efficiency of the effective regions 33 _{1 to} 33 ₃ is high. The passage holes 32 in the effective regions 33 _{1 to} 33 ₃ are prevented from being deformed by heat.

  Of the surface facing upward of the discharge device 21, the portion outside the discharge port 22 is covered with a heat radiation preventing member 29. The thermal radiation preventing member 29 prevents the radiant heat of the discharge device 21 from reaching the mask 31 and causing the mask 31 to thermally expand.

<Film Forming Method Using Film Forming Apparatus of First Example>
A film forming method using the film forming apparatus 10a of the first example will be described.
(Preparation process)
With reference to FIG. 3A, the first and second film formation regions having the same shape, the same size, and the same number as the effective regions 33 _{1 to} 33 ₃ of the mask 31 are previously formed on the surface of the film formation target 42. 43 ₁ to 43 ₃ and 44 _{1 to} 44 ₃ are alternately determined adjacent to each other along the width direction of one film formation region.

The vacuum exhaust device 12 is operated to evacuate the vacuum chamber 11 to form a vacuum atmosphere. Thereafter, the operation of the vacuum exhaust device 12 is continued to maintain the vacuum atmosphere in the vacuum chamber 11.
While maintaining the vacuum atmosphere in the vacuum chamber 11, the film formation target 42 is carried into the vacuum chamber 11, arranged facing the mask 31, and the first film formation region 43 ₁ to 43 ₁ of the film formation target 42. 43 ₃ is made to face the effective regions 33 _{1 to} 33 _3, and the second film formation regions 44 _{1 to} 44 ₃ are made to face the shielding regions 34 _{2 to} 34 ₄ .

  A heat transfer medium having a predetermined temperature is passed through the flow path 39 of the flow path member 38 to bring the mask 31 to the same temperature as the heat transfer medium. Thereafter, the flow of the heat transfer medium in the flow path 39 is continued, and the temperature of the mask 31 is maintained at the same temperature as the heat transfer medium.

The second moving device 53 is operated, and the discharge device 21 is arranged outside the range facing the mask 31. A thin film material 41 is placed in the discharge device 21.
The heater 25 generates heat, the discharge device 21 is heated, the thin film material 41 is heated, and the thin film material vapor is discharged from the discharge port 22.

(First film formation process)
When the discharge device 21 is moved along the length direction 5 by the second moving device 53 and passed through the position facing the mask 31, the thin film material vapor discharged from the discharge port 22 is in the effective regions 33 _{1 to} 33. ₃ , passes through the passage hole 32, reaches the first film formation regions 43 ₁ to 43 ₃ of the film formation target 42, and as shown in FIG. _{1-43 3} the passage hole 32 with the same shape thin 45 is formed.

  The mask 31 is maintained at the same temperature as the heat transfer medium, and the passage hole 32 is not deformed by the radiant heat of the discharge device 21, so that the outline of the thin film 45 is not blurred and the thin film is not displaced. .

The second film formation regions 44 _{1 to} 44 ₃ face the shielding regions 34 _{2 to} 34 ₄ , and the thin film material vapor does not reach the second film formation regions 44 _{1 to} 44 ₃ .
The discharge device 21 is reciprocated a plurality of times along the length direction 5 by the second moving device 53, so that the thin film 45 formed in the first film forming regions 43 ₁ to 43 ₃ is predetermined. You may laminate | stack until it becomes a film thickness.

(Transfer process)
With reference to FIGS. 1 and 2, the first moving device 51 is operated in a state where the discharge device 21 is disposed outside the range facing the mask 31, and the film formation target is formed on the mask 31 and the discharge device 21. The object 42 is relatively moved in the direction (width direction 6) in which the effective regions 33 _{1 to} 33 ₃ and the shielding regions 34 _{1 to} 34 ₄ are arranged, and the second film formation regions 44 _{1 to} 44 ₃ are moved to the effective region 33. _{1 to} 33 ₃ are faced, and the first film formation regions 43 ₁ to 43 ₃ are faced to the shielding regions 34 _{1 to} 34 ₃ .
During the movement of the film formation target 42, the discharge device 21 is disposed outside the range facing the mask 31, and the vapor does not reach the surface of the film formation target 42.

(Second film formation process)
When the discharge device 21 is moved along the length direction 5 by the second moving device 53 and passed through the position facing the mask 31, the thin film material vapor discharged from the discharge port 22 is in the effective regions 33 _{1 to} 33. ₃ , passes through the passage hole 32, reaches the second film formation regions 44 _{1 to} 44 _{3 of the} film formation target 42, and as shown in FIG. 3C, the second film formation region 44. a thin film of the same shape are formed with apertures 32 in _{1-44 3.} First film formation region 43 _{1-43 3} is facing the shielding area 34 _{1-34 3,} the thin film material vapor does not reach the first film formation region 43 _{1-43 3.}

The discharge device 21 is reciprocated a plurality of times along the length direction 5 by the second moving device 53, so that the thin film 45 formed in the second film formation regions 44 _{1 to} 44 ₃ is predetermined. You may laminate | stack until it becomes a film thickness.
In this manner, thin films are formed in the first and second film formation regions 43 ₁ to 43 ₃ and 44 _{1 to} 44 ₃ of the film formation target 42.

The heating of the discharge device 21 by the heater 25 is stopped, and the discharge of the thin film material vapor from the discharge port 22 is stopped.
While maintaining the vacuum atmosphere in the vacuum chamber 11, the film formation target 42 that has been formed is carried out of the vacuum chamber 11, and then the film formation target 42 that has not been formed is loaded into the vacuum chamber 11. By repeating the above steps, a thin film is sequentially formed on the plurality of film formation objects 42.

  The mask 31 is maintained at the same temperature as the heat transfer medium, and even if the thin film formation is repeated on the plurality of film formation objects 42, the mask 31 is not deformed by heat, and the film formation objects 42 are not affected. The outline of the thin film 45 to be formed does not become unclear and the thin film is not displaced.

<Structure of film forming apparatus of second example>
The structure of the film forming apparatus of the second example of the present invention will be described.
4 is an internal side view of the film forming apparatus 10b of the second example, and FIG. 5 is an internal plan view thereof.

Of the configuration of the film forming apparatus 10b of the second example, the same parts as those of the film forming apparatus 10a of the first example are denoted by the same reference numerals and description thereof is omitted.
The film forming apparatus 10b of the second example has discharge apparatuses 21h and 21d instead of the discharge apparatus 21 of the film formation apparatus 10a of the first example. In FIG. 4, the discharge device 21d is not shown.
The structures of the discharge devices denoted by reference numerals 21h and 21d are the same as each other, and the discharge device denoted by reference sign 21h will be described as a representative.

Here, the discharge device 21h is an elongated hollow container, and is disposed in the vacuum chamber 11 with its longitudinal direction oriented parallel to the width direction 6 of the effective regions 33 _{1 to} 33 ₃ .
The discharge device 21h is connected to a gas discharge portion 60h for discharging a thin film material vapor, and the thin film material vapor is introduced into the discharge device 21h from the gas discharge portion 60h.

In the present embodiment, the gas discharge section 60h includes red, green, and blue evaporation sources 61h _R , 61h _G , and 61h _B that release red, green, and blue thin film material vapors, and red, green, and blue evaporation sources 61h _R and 61h _G , 61h _B , openable and closable red, green and blue bulbs 62h _R , 62h _G and 62h _B are provided.

When the red, green and blue bulbs 62h _R , 62h _G and 62h _B are opened, red, green and blue thin film material vapors are emitted from the red, green and blue evaporation sources 61h _R , 61h _G and 61h _B into the discharge device 21h. When each is introduced and closed, the introduction of steam into the discharge device 21h is stopped.

  A plurality of discharge ports 22h are provided along the longitudinal direction on the surface facing upward of the discharge device 21h. The steam introduced into the discharge device 21h is discharged into the vacuum chamber 11 through each discharge port 22h.

  The discharge device 21h is not limited to the above configuration as long as the thin film material vapor is introduced from the gas discharge unit 60h and the introduced thin film material vapor is discharged into the vacuum chamber 11 from the discharge port 22h.

FIG. 6 is an internal side view of the film forming apparatus 10b of the second example having the discharge device 21h having another structure.
This discharge device 21h has an n-stage cascaded branch structure composed of _{first to} n-th (n is a natural number of 2 or more) branch pipes 59 ₁ , 59 ₂ , and the first to n-th branch pipes 59 ₁ , 59 ₂ includes an inlet connected to the outlet of the gas discharge part 60h or the branch pipe 59 _{1 in} the preceding stage, two branch pipes for diverting the thin film material vapor into two systems, and two branch pipes. And an outlet provided in each.

In the present embodiment, the discharge device 21h has a two-stage cascaded branch structure composed of _first and second branch pipes 59 ₁ and 59 ₂ .
The first branch pipe 59 _1, outlet provided in each of the inlet connected to the gas discharge portion 60h, and two branch pipes body diverting thin film material vapor into two systems, two of the branch tube And have.

The second branch pipe 59 ₂ includes an inlet connected to the outlet of the first branch pipe 59 ₁ , two branch pipes for diverting the thin film material vapor into two systems, and two branch pipes, respectively. And an outlet provided in the main body.
In each of the branch pipes 59 ₁ and 59 ₂ , the flow path lengths of the thin film material vapor from the inlet to the outlet of the two branch pipes are made equal to each other.
Outlet 22h is provided in the second outlet branch pipe 59 _2.

Thin film material vapor is introduced into the first inlet of the branch pipe 59 ₁ through the gas discharge portion 60h may be equally split into two paths by the first branch pipes 59 _1, the second inlet of the branch pipe 59 ₂ The second branch pipe 59 _{2 is} equally divided into two systems, and flows out into the vacuum chamber 11 from the discharge port 22 h provided at the outlet of the second branch pipe 59 ₂ .
Therefore, the thin film material vapor introduced into the discharge device 21h flows out from each discharge port 22h at the same flow rate, and the film thickness of the thin film formed on the surface of the film formation target 42 is the same as that of the film formation target 42. Uniform within the surface.

  4 and 6, a linear heater 25h is wound around and attached to the discharge device 21h, and a heating power source 26h is electrically connected to the heater 25h. When a current is passed from the heating power supply 26h to the heater 25h, the heater 25h generates heat, and the discharge device 21h is heated by heat conduction so that the vapor introduced into the discharge device 21h does not condense on the wall surface. .

Referring to FIG. 5, the discharge devices 21 h and 21 d are arranged adjacent to the effective regions 33 _{1 to} 33 _{3 in} the length direction 5 and fixed to the same movable portion 53 b of the second moving device 53. When the movable portion 53b is moved along the rail 53a, the discharge devices 21h and 21d are moved along the rail 53a together.

The discharge ports 22h and 22d of the discharge devices 21h and 21d are arranged on an extension line along the length direction 5 of the position facing the effective regions 33 _{1 to} 33 ₃ and are positioned facing the shielding regions 34 _{1 to} 34 _4. It is not arranged on the extension line along the length direction 5 of the.

When the discharge devices 21h and 21d are moved along the length direction 5 by the second moving device 53, the discharge ports 22h and 22d of the discharge devices 21h and 21d are within the range facing the effective regions 33 _{1 to} 33 ₃ . The thin film material vapor released from the discharge ports 22h and 22d passes through the passage holes 32 of the effective regions 33 _{1 to} 33 ₃ without going out of the range facing the shielding regions 34 _{1 to} 34 _4. Thus, it reaches the film formation target 42 together, reaches the shielding regions 34 _{1 to} 34 _4, and is prevented from being wasted or causing dust.

<Film Forming Method Using Second Example Film Forming Apparatus>
A film forming method using the film forming apparatus 10b of the second example will be described.
(Preparation process)
FIG. 7 is a partially enlarged view of the mask 31. The mask 31 used in the present embodiment is used for forming a three-color light emitting layer by one piece, and the length d in the width direction 6 of each passage hole 32 is two passage holes adjacent in the width direction 6. It is formed to have a length equal to or less than one third of the center distance L of 32.

With reference to FIG. 8A, the first and second film formation regions having the same shape, the same size, and the same number as the effective regions 33 _{1 to} 33 ₃ of the mask 31 are previously formed on the surface of the film formation target 42. 43 ₁ to 43 ₃ and 44 _{1 to} 44 ₃ are alternately determined adjacent to each other along the width direction of one film formation region. In each of the first and second film formation regions 43 ₁ to 43 ₃ and 44 _{1 to} 44 ₃ , the same shape, the same size, and the same number of red, green, and blue film formation regions as the passage holes 32 are formed. It is determined adjacent to the width direction 6 in this order.

Referring to FIG. 5, the gas discharge portion 60h, 60d of the red, green, blue valve _{62h R, 62h G, 62h B} , 62d R, keep 62d _G, the 62d _B closed.
The vacuum exhaust device 12 is operated to evacuate the vacuum chamber 11 to form a vacuum atmosphere. Thereafter, the operation of the vacuum exhaust device 12 is continued to maintain the vacuum atmosphere in the vacuum chamber 11.

While maintaining the vacuum atmosphere in the vacuum chamber 11, the film formation target 42 is carried into the vacuum chamber 11, arranged facing the mask 31, and the first film formation region 43 ₁ to 43 ₁ of the film formation target 42. 43 ₃ is made to face the effective regions 33 _{1 to} 33 _3, and the second film formation regions 44 _{1 to} 44 ₃ are made to face the shielding regions 34 _{2 to} 34 ₄ . Here it is opposed to the first film formation region 43 _{1-43 3} of each passage hole 32 of the red deposition region of the effective region 33 _to 333.

  A heat transfer medium having a predetermined temperature is allowed to flow through the flow path 39 to bring the mask 31 to the same temperature as the heat transfer medium. Thereafter, the flow of the heat transfer medium in the flow path 39 is continued, and the temperature of the mask 31 is maintained at the same temperature as the heat transfer medium.

  The second moving device 53 is operated so that the discharge devices 21h and 21d are arranged outside the range facing the mask 31. The discharge devices 21h and 21d are heated by a heater (not shown) to raise the temperature to the vapor condensation temperature or higher. Thereafter, the heating by the heater is continued to maintain the temperatures of the discharge devices 21h and 21d at or above the vapor condensation temperature.

(Red light emitting layer deposition process)
The red valves 62h _R and 62d _R of the gas discharge portions 60h and 60d are opened, and the red host thin film material vapor and the red dopant thin film material vapor are respectively introduced into the discharge devices 21h and 21d. It discharges in the vacuum chamber 11 from the discharge ports 22h and 22d of 21d.

When the same process as the first film forming process described above is performed to move the discharge devices 21h and 21d together along the length direction 5 and pass through a position facing the mask 31, each discharge device 21h, The red host thin film material vapor and the red dopant thin film material vapor emitted from the discharge ports 22 h and 22 d of 21 d enter the effective regions 33 _{1 to} 33 ₃ , pass through the through holes 32, and the first film formation target 42. reached with a red film formation region of the deposition region 43 _{1-43 3,} as shown in FIG. 8 (b), passes through the first red film formation region of the deposition region 43 _{1-43 3} holes 32 A red light emitting layer 45 _R having the same shape as the first and second layers is formed.

Next, the same process as the above-described moving process is performed to move the film formation target 42 relatively to the width direction 6 with respect to the mask 31 and the discharge devices 21h and 21d, and the second film formation regions 44 ₁ to 44 ₁ . 44 ₃ is faced with the effective region 33 _to 333, and the first film formation zone 43 _{1-43 3} to face the shielded area 34 _{1-34 3.} Here, the red film formation areas of the second film formation areas 44 _{1 to} 44 ₃ are made to face the respective through holes 32 of the effective areas 33 _{1 to} 33 ₃ .

Next, the same process as the second film forming process described above is performed, and the discharge devices 21h and 21d are moved together along the length direction 5 to pass the position facing the mask 31. The red host thin film material vapor and the red dopant thin film material vapor emitted from the discharge ports 22h and 22d of 21h and 21d enter the effective regions 33 _{1 to} 33 ₃ , pass through the through holes 32, and It reaches the red film forming region of the second film forming regions 44 _{1 to} 44 ₃ together and passes through the red film forming region of the second film forming regions 44 _{1 to} 44 ₃ as shown in FIG. A red light emitting layer 45 _R having the same shape as the hole 32 is formed.

With the discharge devices 21h and 21d arranged outside the range facing the mask 31, the red valves 62h _R and 62d _R of the gas discharge portions 60h and 60d are closed to enter the discharge devices 21h and 21d. The introduction of the red host thin film material vapor and the red dopant thin film material vapor is stopped, and the discharge of the vapor into the vacuum chamber 11 from the discharge ports 22h and 22d of the discharge devices 21h and 21d is stopped.

(Green light emitting layer deposition process)
Next, the first moving device 51 is operated to move the film formation target 42 relative to the mask 31 and the discharge devices 21h and 21d in the width direction 6 so that the first film formation regions 43 ₁ to 43 ₁ . 43 ₃ faces the effective areas 33 _{1 to} 33 _3, and the second film formation areas 44 _{1 to} 44 ₃ face the shielding areas 34 _{2 to} 34 ₄ . Here it is opposed to the first film formation region 43 _{1-43 3} of each passage hole 32 of the green film formation region to the effective region 33 _to 333.

The green valves 62h _G and 62d _G of the gas discharge portions 60h and 60d are opened, and the green host thin film material vapor and the green dopant thin film material vapor are respectively introduced into the discharge devices 21h and 21d. It discharges in the vacuum chamber 11 from the discharge ports 22h and 22d of 21d.

The emission devices 21h and 21d are moved together in the same process as the red light emitting layer forming process described above, and as shown in FIG. 8D, the first and second film forming regions 43 ₁ to 43 ₃ and 44 are moved. in _{1-44 3} green film formation region to form a green light-emitting layer 45 _G of the passage hole 32 the same shape.

With the discharge devices 21h and 21d arranged outside the range facing the mask 31, the green bulbs 62h _G and 62d _G of the gas discharge portions 60h and 60d are closed to enter the discharge devices 21h and 21d. The introduction of the green host thin film material vapor and the green dopant thin film material vapor is stopped, and the discharge of the vapor from the discharge ports 22h and 22d of the discharge devices 21h and 21d into the vacuum chamber 11 is stopped.

(Blue light emitting layer deposition process)
Next, the first moving device 51 is operated to move the film formation target 42 relative to the mask 31 and the discharge devices 21h and 21d in the width direction 6 so that the first film formation regions 43 ₁ to 43 ₁ . 43 ₃ faces the effective areas 33 _{1 to} 33 _3, and the second film formation areas 44 _{1 to} 44 ₃ face the shielding areas 34 _{2 to} 34 ₄ . Here it is opposed to the first film formation region 43 _{1-43 3} of each passage hole 32 of the blue film region an effective area 33 _to 333.

Each gas discharge portion 60h, 60d of blue valve 62h _B, and the 62d _B opened, the release device 21h, 21d in the blue host thin film material vapor and blue dopant film material vapor is introduced respectively, the release device 21h, It discharges in the vacuum chamber 11 from the discharge ports 22h and 22d of 21d.

In the same process as the red or green light emitting layer film forming process, the emission devices 21h and 21d are moved together, and as shown in FIG. 8E, the first and second film forming regions 43 ₁ to 43 ₃ are moved. , 44 _{1 to} 44 ₃ , a blue light emitting layer 45 _B having the same shape as the passage hole 32 is formed.

Each release apparatus 21h, while placed from outside the range facing the 21d and mask 31, the gas discharge portion 60h, the blue valve 62h _B of 60d, the 62d _B in the closed state, the discharge device 21h, into 21d The introduction of the blue host thin film material vapor and the blue dopant thin film material vapor is stopped, and the discharge of the vapor into the vacuum chamber 11 from the discharge ports 22h and 22d of the discharge devices 21h and 21d is stopped.

In this way, the red, green, and blue light emitting layers 45 _R are formed in the red, green, and blue film formation regions of the first and second film formation regions 43 ₁ to 43 ₃ and 44 _{1 to} 44 ₃ of the film formation target 42. 45 _G and 45 _B are formed.

While maintaining the vacuum atmosphere in the vacuum chamber 11, the film formation target 42 that has been formed is carried out of the vacuum chamber 11, and then the film formation target 42 that has not been formed is loaded into the vacuum chamber 11. By repeating the above steps, the red, green, and blue light emitting layers 45 _R , 45 _G , and 45 _B are formed on the plurality of film formation objects 42 in order.

<Structure of film forming apparatus of third example>
The structure of the film forming apparatus of the third example of the present invention will be described.
FIG. 9 is an internal plan view of the film forming apparatus 10c of the third example.
Of the configuration of the film forming apparatus 10c of the third example, the same parts as those of the film forming apparatus 10a of the first example are denoted by the same reference numerals and description thereof is omitted.

The film forming apparatus 10c of the third example includes first and second discharging apparatuses 21 ₁ and 21 ₂ having the same structure as the discharging apparatus 21 of the film forming apparatus 10a of the first example. The membrane device 10a has a second moving device 53 ′ having a structure different from that of the second moving device 53.
The first discharge device 21 ₁ , the first moving device 51, and the second discharge device 21 ₂ are arranged in this order along the length direction 5.

Here, the second moving device 53 ′ has a plurality of rotating rollers 57. The rotation roller 57 is positioned so as not to block the vapor discharged from the discharge ports 22 ₁ , 22 _{2 of} the first and second discharge devices 21 ₁ , 21 _{2 with} the rotation axis directed parallel to the width direction 6. They are arranged in two rows along the length direction 5.

When the rotation roller 57 is rotated in a state where the mask 31 and the film formation target 42 are arranged on the rotation roller 57, the mask 31 and the film formation target 42 move together along the length direction 5. Thus, a position facing the first discharge device 21 ₁ , a position facing the first moving device 51, and a position facing the second discharge device 21 ₂ are sequentially passed.

<Film Forming Method Using Third Example Film Forming Apparatus>
A film forming method using the film forming apparatus 10c of the third example will be described.
With reference to FIG. 3A, the first and second film formation regions having the same shape, the same size, and the same number as the effective regions 33 _{1 to} 33 ₃ of the mask 31 are previously formed on the surface of the film formation target 42. 43 ₁ to 43 ₃ and 44 _{1 to} 44 ₃ are alternately determined adjacent to each other in the width direction.

The vacuum exhaust device 12 is operated to evacuate the vacuum chamber 11 to form a vacuum atmosphere. Thereafter, the operation of the vacuum exhaust device 12 is continued to maintain the vacuum atmosphere in the vacuum chamber 11.
The film-forming target 42 is disposed on the mask 31, it is opposed to the first film formation zone 43 _{1-43 3} film-forming target 42 and the effective region 33 _to 333, the second film forming region 44 _{1 9} with the shielding regions 34 _{2 to} 34 ₄ facing each other, with reference to FIG. 9, the vacuum chamber 11 together with the mask 31 and the deposition target 42 is maintained while maintaining the vacuum atmosphere in the vacuum chamber 11. 11 and is placed on a rotating roller 57 positioned on the starting point side in the length direction 5 from the first discharge device 21 ₁ .

The first and second discharge devices 21 ₁ and 21 ₂ are heated to discharge the thin film material vapor from the discharge ports 22 ₁ and 22 _{2 of} the first and second discharge devices 21 ₁ and 21 ₂ .
The rotating roller 57 is rotated, the mask 31 and the film-forming target 42 is moved towards the end side in the longitudinal direction 5 together, when passing the first discharge device 21 ₁ and the opposing position, release The thin film material vapor discharged from the outlet 22 ₁ reaches the surface of the film formation target 42 through the passage hole 32, and as shown in FIG. 3B, the first film formation regions 43 ₁ to 43 _3. A thin film 45 having the same shape as the passage hole 32 is formed.

Referring to FIG. 9, the rotating roller 57 is rotated to move the mask 31 and the film formation target 42 together along the length direction 5 and to stand still at a position facing the first moving device 51. The first moving device 51 is operated to move the film formation target 42 relative to the mask 31 and the first and second discharging devices 21 ₁ and 21 ₂ in the width direction 6, the deposition region 44 _{1-44 3} is faced with the effective region 33 _to 333, to face the first film formation region 43 _{1-43 3} and the shield area 34 _{1-34 3.}

Next, the rotation roller 57 is rotated so that the mask 31 and the film formation target 42 are moved together along the length direction 5 to pass through the position facing the second discharge device 21 _2. The thin film material vapor released from 22 ₂ reaches the surface of the film formation target 42 through the passage hole 32 and enters the second film formation regions 44 _{1 to} 44 ₃ as shown in FIG. A thin film 45 having the same shape as the passage hole 32 is formed.

In this manner, thin films are formed in the first and second film formation regions 43 ₁ to 43 ₃ and 44 _{1 to} 44 ₃ of the film formation target 42.
The first and second discharge devices 21 ₁ and 21 ₂ are not limited to the above-described configuration, and have the same structure as the discharge devices 21h and 21d of the film forming apparatus 10b of the second example. You may comprise so that material vapor | steam may be supplied, respectively.

5... Length direction 6... Width direction 10 a, 10 b, 10 c .. Deposition device 11... Vacuum chamber 21, 21 h, 21 d, 21 ₁ , 21 ₂ ...... Release device 22, 22 h, 22 d, 22 ₁ , 22 ₂ ...... Discharge port 31 ...... Mask 32 ...... Passing hole 33 _{1 to} 33 ₃ ...... Effective area 34 _{1 to} 34 ₄ ...... Shielding area 42 ...... Film formation target 51 ...... First moving device 53 ... ... Second mobile device

Claims (5)

A vacuum chamber;
A discharge device provided with a discharge port, and discharges thin film material vapor from the discharge port into the vacuum chamber;
A mask provided with a plurality of passage holes through which the thin film material vapor discharged from the discharge device passes,
A film forming apparatus that causes the thin film material vapor that has passed through the passage hole to reach a film formation target disposed at a position facing the mask, and forms a thin film on a surface of the film formation target;
The mask has an effective area in which the passage hole is disposed, and a shielding area for shielding the thin film material vapor,
The effective area and the shielding area have a rectangular shape having a length direction and a width direction orthogonal to the length direction;
The effective area and the shielding area are alternately arranged adjacent to each other along the width direction of the effective area,
A first moving device that moves the film formation object relative to the mask and the discharge device in a direction in which the effective region and the shielding region are aligned ;
A mask holding member that is in close contact with the shielding region and supports an outer peripheral portion of the mask and a central portion that is bent by gravity;
A second moving device for moving the discharge device;
I have a,
While the mask is supported by the mask holding member, the discharge port for discharging the thin film material vapor is moved by the second moving device, and the first facing the effective area of the surface of the film formation target. After the thin film is formed in the film formation region, the second moving device places the discharge port outside the range facing the mask, and the first moving device allows the film formation target to be formed. Among these, the first film formation area facing the effective area is moved relatively to a position facing the shielding area, and the effective area includes a second area facing the shielding area. The film forming region is relatively moved, and the second moving device moves the discharge port through which the thin film material vapor is released, so that the first region that faces the effective region of the surface of the film forming object is moved. The thin film is in the second deposition area Configured film forming apparatus as done. The second mobile device to said mask, said discharge device, the effective area of the film forming apparatus 請 Motomeko 1, wherein Ru is relatively moved in the longitudinal direction. The outlet, the effective region and the film forming apparatus of any one of claims 1 or claim 2 disposed on an extension line along said length direction of the facing position. A vacuum chamber;
A discharge device provided with a discharge port, and discharges thin film material vapor from the discharge port into the vacuum chamber;
A mask provided with a plurality of passage holes through which the thin film material vapor discharged from the discharge device passes,
A film forming apparatus that causes the thin film material vapor that has passed through the passage hole to reach a film formation target disposed at a position facing the mask, and forms a thin film on a surface of the film formation target;
The mask has an effective area in which the passage hole is disposed, and a shielding area for shielding the thin film material vapor,
The effective area and the shielding area have a rectangular shape having a length direction and a width direction orthogonal to the length direction;
The effective area and the shielding area are alternately arranged adjacent to each other along the width direction of the effective area,
A first moving device that moves the film formation object relative to the mask and the discharge device in a direction in which the effective region and the shielding region are aligned;
A mask holding member that is in close contact with the shielding region and supports an outer peripheral portion of the mask and a central portion that is bent by gravity;
A second moving device for moving the discharge device;
A film forming method using a film forming apparatus having
By the second mobile device, first to form the thin film on the first film-forming region facing said active area of said outlet is moved, the surface of the object to be film which releases the thin film material vapor A film-forming process;
The discharge port is arranged outside the range facing the mask by the second moving device, and the first moving device faces the effective region of the film formation target by the first moving device. And moving the film forming region relatively to a position facing the shielding region, and moving the second film forming region facing the shielding region relative to the effective region,
The second moving device moves the discharge port through which the thin film material vapor is released , and forms a thin film in the second film formation region facing the effective region of the surface of the film formation target. Two film formation steps;
Have
A film forming method in which the mask is supported by the mask holding member while the first film forming process, the moving process, and the second film forming process are performed. 5. The film formation according to claim 4 , wherein in the first and second film formation steps, the discharge device is moved relative to the mask and the film formation target in the length direction of the effective region. Method.

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