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JP6760638B2 - Flat surface polishing device - Google Patents

Flat surface polishing device Download PDF

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JP6760638B2
JP6760638B2 JP2016081116A JP2016081116A JP6760638B2 JP 6760638 B2 JP6760638 B2 JP 6760638B2 JP 2016081116 A JP2016081116 A JP 2016081116A JP 2016081116 A JP2016081116 A JP 2016081116A JP 6760638 B2 JP6760638 B2 JP 6760638B2
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Prior art keywords
thickness
work
carrier
surface plate
thickness measuring
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JP2017189849A5 (en
JP2017189849A (en
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井上 裕介
裕介 井上
秀明 吉原
秀明 吉原
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SpeedFam Co Ltd
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SpeedFam Co Ltd
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Priority to JP2016081116A priority Critical patent/JP6760638B2/en
Priority to KR1020170045067A priority patent/KR102315142B1/en
Priority to CN201710228022.7A priority patent/CN107297678A/en
Priority to TW106112056A priority patent/TWI704613B/en
Publication of JP2017189849A publication Critical patent/JP2017189849A/en
Publication of JP2017189849A5 publication Critical patent/JP2017189849A5/ja
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/28Work carriers for double side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • B24B7/242Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass for plate glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Description

本発明は、少なくとも一部が透光性を有する材料により形成されるキャリアに保持された半導体ウエーハやガラス基板等の板状のワークを研磨する平面研磨装置に関するものであり、さらに詳しくは、ワーク及びキャリアの厚さを測定して研磨する平面研磨装置に関するものである。 The present invention relates to a flat surface polishing apparatus for polishing a plate-shaped work such as a semiconductor wafer or a glass substrate held by a carrier formed of a material having at least a part of translucency, and more particularly, the work. It also relates to a flat surface polishing device that measures and polishes the thickness of a carrier.

平面研磨装置において、キャリアに保持されたワークの両面を研磨する場合、ワークの厚さとキャリアの厚さとを測定し、該ワークの厚さとキャリアの厚さとの差(ギャップ)が所定の値になった時点で研磨を終了することにより、平坦度の高いワークを得ることができる。
このようにワークの厚さとキャリアの厚さとの差を管理するギャップ管理方式の研磨を行う場合、従来は、ワークの厚さは研磨加工中にレーザー光で測定し、キャリアの厚さは、ワークの研磨が行われていないときに、該キャリアを平面研磨装置から取り出してマイクロメータ等で測定するようにしていた。このため、キャリアの厚さ測定に手間がかかり、非能率的であるばかりでなく、測定ミスや測定データの入力ミス等人為的なミスが発生する恐れがあるという問題があった。
When polishing both sides of a work held by a carrier in a flat surface polishing device, the thickness of the work and the thickness of the carrier are measured, and the difference (gap) between the thickness of the work and the thickness of the carrier becomes a predetermined value. By finishing the polishing at that point, a work having a high flatness can be obtained.
When polishing with a gap management method that manages the difference between the work thickness and the carrier thickness in this way, conventionally, the work thickness is measured with a laser beam during polishing, and the carrier thickness is the work. When the polishing was not performed, the carrier was taken out from the surface polishing device and measured with a micrometer or the like. For this reason, it takes time and effort to measure the thickness of the carrier, which is not only inefficient, but also has a problem that human error such as measurement error or input error of measurement data may occur.

特許文献1には、平面研磨装置の支持フレームにレーザー光による厚さ測定装置を取り付け、この厚さ測定装置からレーザー光を、上定盤に設けた窓部を通してワークに照射し、該ワークの表面及び裏面で反射する反射光を受光して該ワークの厚さを測定するようにしたものが開示されている。
しかし、特許文献1に開示されたものは、支持フレームに固定的に設置した厚さ測定装置から、回転する上定盤に設けた窓部を通してワークにレーザー光を照射するようにしているため、窓部が測定位置を通るときだけにしか測定データが得られず、このため、測定データ数が少ないという問題がある。ワークの研磨精度は、該ワークの厚さに関する測定データ数が多いほど向上するため、できるだけ多くの測定データを得ることが望ましい。
In Patent Document 1, a thickness measuring device using a laser beam is attached to a support frame of a flat surface polishing device, and the work is irradiated with laser light from the thickness measuring device through a window provided on an upper surface plate. It is disclosed that the thickness of the work is measured by receiving the reflected light reflected on the front surface and the back surface.
However, in the one disclosed in Patent Document 1, since the thickness measuring device fixedly installed on the support frame irradiates the work with the laser beam through the window portion provided on the rotating upper surface plate. The measurement data can be obtained only when the window portion passes through the measurement position, and therefore, there is a problem that the number of measurement data is small. Since the polishing accuracy of the work improves as the number of measurement data relating to the thickness of the work increases, it is desirable to obtain as much measurement data as possible.

一方、特許文献2には、光源を含む光学計測装置を上定盤に取り付け、この光学計測装置を上定盤と一体に回転させながらワークの厚さを測定するようにしたものが開示されている。このようにすれば、得られる測定データの数は多くなるが、レーザー発振装置からなる光源を含む光学計測装置は、全体的に大がかりで重量も大きいため、上定盤を含む回転部分の構成が複雑化するばかりでなく、該上定盤の回転時のバランスを保つのが非常に難しく、該上定盤が振動し易い。このため、測定データが上定盤の振動によるノイズの影響を受け易い。この場合、ワークは透光性に優れているため、上記ノイズの影響を大きく受けて厚さ測定が困難になるようなことは殆どないが、ワークに比べて透光性が低いキャリアの場合は、レーザー光を照射した際の反射強度がワークに比べて弱いため、上記ノイズの影響を大きく受けて厚さ測定が困難になることが考えられる。 On the other hand, Patent Document 2 discloses a device in which an optical measuring device including a light source is attached to an upper surface plate, and the thickness of the work is measured while rotating the optical measuring device integrally with the upper surface plate. There is. In this way, the number of measurement data that can be obtained increases, but since the optical measurement device including the light source consisting of the laser oscillator is large and heavy as a whole, the configuration of the rotating part including the upper surface plate is configured. Not only is it complicated, but it is very difficult to maintain the balance of the upper surface plate during rotation, and the upper surface plate tends to vibrate. Therefore, the measurement data is easily affected by noise due to the vibration of the upper surface plate. In this case, since the work has excellent translucency, it is unlikely that the thickness measurement becomes difficult due to the influence of the above noise, but in the case of a carrier having lower translucency than the work. Since the reflection intensity when irradiated with laser light is weaker than that of the work, it is considered that the thickness measurement becomes difficult due to the influence of the above noise.

特許文献2において、光学計測装置から光源を分離し、上定盤には光学計測装置だけを取り付け、光源から光ロータリコネクタを介して光学計測装置にレーザー光を供給するようにすることも考えられるが、光ロータリコネクタを経由したレーザー光や反射光は、該光ロータリコネクタで減衰したり回転に伴うノイズが含まれたりし易いため、ワークに比べて透光性が低いキャリアの厚さ測定に支障を来すことが考えられる。 In Patent Document 2, it is also conceivable to separate the light source from the optical measuring device, attach only the optical measuring device to the upper platen, and supply the laser light from the light source to the optical measuring device via the optical rotary connector. However, the laser light and reflected light that have passed through the optical rotary connector are likely to be attenuated by the optical rotary connector and contain noise due to rotation, so it is suitable for measuring the thickness of carriers that are less translucent than the workpiece. It may cause problems.

特開2008−227393号公報Japanese Unexamined Patent Publication No. 2008-227393 特開2002−59364号公報Japanese Unexamined Patent Publication No. 2002-59364

本発明の技術的課題は、キャリアに保持された半導体ウエーハやガラス基板等のワークを研磨する平面研磨装置において、ワークとキャリアとの厚さ差に基づくギャップ管理方式の研磨を行うために、ワークの厚さとキャリアの厚さの両方をレーザー光によって確実に測定することができるようにすると共に、ワークの厚さに関する測定データ数をより多く得られるようにすることによって研磨精度を高めることにある。 A technical subject of the present invention is to perform a gap management method polishing based on a thickness difference between a work and a carrier in a flat surface polishing apparatus for polishing a work such as a semiconductor wafer or a glass substrate held by a carrier. The purpose is to improve the polishing accuracy by ensuring that both the thickness of the wafer and the thickness of the carrier can be measured reliably by the laser beam, and that a larger number of measurement data regarding the thickness of the work can be obtained. ..

前記課題を解決するため、本発明は、回転自在に支持された下定盤と、昇降自在且つ回転自在に支持された上定盤と、前記上定盤と下定盤との間に配置され、該上定盤と下定盤とで研磨されるワークを保持するキャリアとを有し、前記キャリアに保持されたワークを前記上定盤と下定盤とで挟持して前記ワークの両面を研磨する平面研磨装置であって、前記キャリアは、少なくとも一部が透光性を有する材料で形成され、前記上定盤に取り付けられ、前記ワークにレーザー光を照射して該ワークの表面及び裏面からの反射光を受光することにより該ワークの厚さを測定する第1厚さ測定器と、前記上定盤及び下定盤を支持する機体に取り付けられ、前記キャリアにレーザー光を照射して該キャリアの表面及び裏面からの反射光を受光することにより該キャリアの厚さを測定する第2厚さ測定器とを有することを特徴とする。 In order to solve the above problems, the present invention is arranged between a rotatably supported lower surface plate, an elevating and rotatably supported upper surface plate, and the upper surface plate and the lower surface plate. It has a carrier that holds the work to be polished by the upper surface plate and the lower surface plate, and the work held by the carrier is sandwiched between the upper surface plate and the lower surface plate to polish both sides of the work. In the device, the carrier is formed of at least a part of a translucent material, attached to the upper surface plate, irradiates the work with laser light, and reflected light from the front surface and the back surface of the work. It is attached to a first thickness measuring instrument that measures the thickness of the work by receiving light, and a machine body that supports the upper surface plate and the lower surface plate, and irradiates the carrier with laser light to irradiate the surface of the carrier and the surface plate. It is characterized by having a second thickness measuring device that measures the thickness of the carrier by receiving the reflected light from the back surface.

このとき、前記平面研磨装置は、前記レーザー光の光源を有し、前記第1厚さ測定器は、ロータリコネクタを介して前記光源に接続されていることが好ましい。 At this time, it is preferable that the surface polishing device has the light source of the laser beam, and the first thickness measuring device is connected to the light source via a rotary connector.

また、前記上定盤には、レーザー光を透過させるワーク用測定窓及びキャリア用測定窓が形成され、前記第1厚さ測定器は、前記ワーク用測定窓を通して前記ワークの厚さを測定し、前記第2厚さ測定器は、前記キャリア用測定窓を通して前記キャリアの厚さを測定することが好ましい。 Further, the upper surface plate is formed with a measuring window for a work and a measuring window for a carrier through which laser light is transmitted, and the first thickness measuring instrument measures the thickness of the work through the measuring window for the work. It is preferable that the second thickness measuring device measures the thickness of the carrier through the measuring window for the carrier.

本発明によれば、ワークにレーザー光を照射することでワークの厚さを測定する第1厚さ測定器が、回転自在に支持された上定盤に取り付けられ、少なくとも一部が透光性を有する材料で形成されたキャリアにレーザー光を照射することでキャリアの厚さを測定する第2厚さ測定器が、上定盤及び下定盤を支持する機体に取り付けられている。そのため、ワークの厚さとキャリアの厚さの両方をレーザー光によって確実に測定し、かつ、ワークの厚さに関する測定データ数をより多く得ることができる。また、キャリアの厚さを測定する際、該キャリアを研磨装置から都度取り外す必要がないため、ワークの厚さとキャリアの厚さとのギャップ管理が容易なものとなり、その作業工数が削減される。また、キャリアの取り外し・再装填によるキャリアの変形や破損を防止することができるため、その変形や破損により上下定盤の研磨面に対する接触が不均一となり、研磨面の状態が不安定になることによるワークの加工精度のばらつきの発生を防止することができ、安定した研磨加工の実現が可能となる。 According to the present invention, a first thickness measuring instrument for measuring the thickness of a work by irradiating the work with a laser beam is attached to a rotatably supported upper surface plate, and at least a part thereof is translucent. A second thickness measuring instrument that measures the thickness of the carrier by irradiating the carrier made of the material having the above surface plate with a laser beam is attached to the machine body that supports the upper surface plate and the lower surface plate. Therefore, both the thickness of the work and the thickness of the carrier can be reliably measured by the laser beam, and a larger number of measurement data regarding the thickness of the work can be obtained. Further, when measuring the thickness of the carrier, it is not necessary to remove the carrier from the polishing apparatus each time, so that the gap between the thickness of the work and the thickness of the carrier can be easily managed, and the work man-hours can be reduced. In addition, since it is possible to prevent the carrier from being deformed or damaged due to the removal and reloading of the carrier, the deformation or damage causes uneven contact with the polished surface of the upper and lower surface plates, and the state of the polished surface becomes unstable. It is possible to prevent variations in the processing accuracy of the work due to the above, and it is possible to realize stable polishing processing.

本発明に係る平面研磨装置の実施形態を概略的に示す断面図である。It is sectional drawing which shows typically the embodiment of the plane polishing apparatus which concerns on this invention. 下定盤上に配設されているキャリアと上定盤に形成されている測定孔との位置関係を示す概略平面図である。It is a schematic plan view which shows the positional relationship between the carrier arranged on the lower surface plate and the measurement hole formed in the upper surface plate.

本実施形態の平面研磨装置1は、シリコンウエーハ、サファイアウエーハ、セラミックスウエーハ、水晶ウエーハ、ガラス基板等のような透光性(光透過性)を有する板状のワークWの両面を研磨するためのもので、機体2に回転自在に支持された下定盤10と、機体2に昇降自在及び回転自在に支持された上定盤20と、上定盤20と下定盤10とで研磨されるワークWを保持するキャリア40とを有している。上定盤20の下面及び下定盤10の上面には、研磨パッド18a,18bが貼付されているが、研磨パッド18a,18bの代わりに砥石を貼着した構造や定盤面自体が研磨面をなす構造であってもよい。 The surface polishing apparatus 1 of the present embodiment is for polishing both sides of a plate-shaped work W having translucency (light transmissivity) such as a silicon wafer, a sapphire wafer, a ceramic wafer, a crystal wafer, and a glass substrate. The lower surface plate 10 rotatably supported by the machine body 2, the upper surface plate 20 rotatably supported by the machine body 2, and the work W polished by the upper surface plate 20 and the lower surface plate 10. Has a carrier 40 that holds the surface plate. Polishing pads 18a and 18b are attached to the lower surface of the upper surface plate 20 and the upper surface of the lower surface plate 10, but the structure in which a grindstone is attached instead of the polishing pads 18a and 18b and the surface plate surface itself form a polishing surface. It may be a structure.

下定盤10の中心にはサンギア11が配設され、下定盤10の外周にはインターナルギア12が下定盤10を取り囲むように配設されている。下定盤10と上定盤20とサンギア11とインターナルギア12とは、軸線Lを中心にして同軸上に配置されている。また、下定盤10上には、キャリア40が、サンギア11とインターナルギア12とに噛合して複数配設されている。サンギア11の中央下部には第1駆動軸13が接続され、下定盤10の中央下部には第2駆動軸14が接続され、インターナルギア12の中央下部には第3駆動軸15が接続されている。また、下定盤10の中心には第4駆動軸16が接続され、この第4駆動軸16は第1駆動軸13に収容されている。第1駆動軸13は第2駆動軸14に収容されており、第2駆動軸14は第3駆動軸15に収容されている。これらの第1から第4駆動軸13−16は、図示しない駆動装置によって駆動及び回転するように構成されている。 A sun gear 11 is arranged at the center of the lower platen 10, and an internal gear 12 is arranged around the lower platen 10 so as to surround the lower platen 10. The lower surface plate 10, the upper surface plate 20, the sun gear 11, and the internal gear 12 are arranged coaxially with the axis L as the center. Further, a plurality of carriers 40 are arranged on the lower platen 10 in mesh with the sun gear 11 and the internal gear 12. The first drive shaft 13 is connected to the lower center of the sun gear 11, the second drive shaft 14 is connected to the lower center of the lower platen 10, and the third drive shaft 15 is connected to the lower center of the internal gear 12. There is. A fourth drive shaft 16 is connected to the center of the lower platen 10, and the fourth drive shaft 16 is housed in the first drive shaft 13. The first drive shaft 13 is housed in the second drive shaft 14, and the second drive shaft 14 is housed in the third drive shaft 15. These first to fourth drive shafts 13-16 are configured to be driven and rotated by a drive device (not shown).

図2に示すように、上定盤20と下定盤10との間には、外周に歯部を備えたキャリア40が等間隔で複数配設され、この歯部とサンギア11及びインターナルギア12とが互いに噛合せしめられており、サンギア11及びインターナルギア12の回転によって、キャリア40はサンギア11の周りを自転及び公転する。各キャリア40は、ワークWが嵌合するワーク保持孔41を有し、ワーク保持孔41は、このキャリア40と中心を異にして形成されている。キャリア40は、その一部又は全部が、測定に用いるレーザー光が透過する材料で形成されている必要がある。その材料としては、エポキシガラス、ポリ塩化ビニル樹脂、アクリル系樹脂、ウレタン系樹脂、アラミド樹脂、ポリエチレンテレフタレート樹脂(PET)、ポリカーボネート樹脂、ポリスチレン樹脂等の合成樹脂、ガラス等を単独で用いることも、あるいは2つ以上を組み合わせて用いることもできる。 As shown in FIG. 2, a plurality of carriers 40 having teeth on the outer periphery are arranged between the upper surface plate 20 and the lower surface plate 10 at equal intervals, and the teeth, the sun gear 11, and the internal gear 12 are arranged. Are meshed with each other, and the rotation of the sun gear 11 and the internal gear 12 causes the carrier 40 to rotate and revolve around the sun gear 11. Each carrier 40 has a work holding hole 41 into which the work W is fitted, and the work holding hole 41 is formed so as to have a different center from the carrier 40. The carrier 40 needs to be partially or wholly formed of a material through which the laser beam used for measurement can be transmitted. As the material, epoxy glass, polyvinyl chloride resin, acrylic resin, urethane resin, aramid resin, polyethylene terephthalate resin (PET), polycarbonate resin, synthetic resin such as polystyrene resin, glass and the like can be used alone. Alternatively, two or more can be used in combination.

上定盤20は、定盤吊り31を介して昇降軸である昇降用アクチュエータ7の昇降ロッド32に取り付けられている。この昇降用アクチュエータ7は機体2に支持され、昇降ロッド32は、下定盤10、上定盤20、サンギア11、インターナルギア12と同じ軸線Lを中心としている。
この構成についてより詳細に説明すると、定盤吊り31の外周側の下面には、下方向に延びる複数の支持スタッド33が円周方向に設けられ、この支持スタッド33が上定盤20の上面に取り付けられている。また、定盤吊り31の内周面と昇降ロッド32の外周面との間には、この定盤吊り31と昇降ロッド32とを上下方向には固定的に結合するが上定盤20の回転方向には相対的に回転自在に結合するベアリング34が介設されている。
The upper surface plate 20 is attached to an elevating rod 32 of an elevating actuator 7 which is an elevating shaft via a surface plate suspension 31. The elevating actuator 7 is supported by the machine body 2, and the elevating rod 32 is centered on the same axis L as the lower surface plate 10, the upper surface plate 20, the sun gear 11, and the internal gear 12.
To explain this configuration in more detail, a plurality of support studs 33 extending downward are provided on the lower surface of the outer peripheral side of the surface plate suspension 31 in the circumferential direction, and the support studs 33 are provided on the upper surface of the upper surface plate 20. It is attached. Further, between the inner peripheral surface of the surface plate suspension 31 and the outer peripheral surface of the elevating rod 32, the surface plate suspension 31 and the elevating rod 32 are fixedly coupled in the vertical direction, but the rotation of the upper surface plate 20 A bearing 34 that is relatively rotatably coupled in the direction is interposed.

上定盤20は、ワークWの非研磨時に、昇降用アクチュエータ7の駆動による昇降ロッド32の収縮によって待避位置(不図示)に上昇し、ワークWの研磨時に、昇降用アクチュエータ7の駆動による昇降ロッド32の伸長によって図1の研磨位置まで下降する。上定盤20が下降すると、上定盤20に取り付けられたフック22が第4駆動軸16の上端のドライバ17に係合するため、上定盤20と定盤吊り31は、第4駆動軸16によりドライバ17を介して駆動され、一体に回転する。 When the work W is not polished, the upper surface plate 20 rises to a shunting position (not shown) due to the contraction of the lifting rod 32 driven by the lifting actuator 7, and when the work W is polished, the upper platen 20 is lifted by driving the lifting actuator 7. The extension of the rod 32 lowers it to the polishing position shown in FIG. When the upper surface plate 20 is lowered, the hook 22 attached to the upper surface plate 20 engages with the driver 17 at the upper end of the fourth drive shaft 16, so that the upper surface plate 20 and the surface plate suspension 31 are connected to the fourth drive shaft. It is driven by 16 via the driver 17, and rotates integrally.

このように構成された平面研磨装置1でワークWを研磨するときは、各キャリア40にワークWがセットされたあと、上定盤20が昇降用アクチュエータ7の駆動による昇降ロッド32の伸長によって待避位置から図1の研磨位置まで下降し、上定盤20に取り付けられたフック22がドライバ17に係合する。この状態で、第1−第4駆動軸13−16が図示しない駆動装置によって駆動及び回転されることにより、各キャリア40がサンギア11の周りで自転及び公転し、各キャリア40に保持されたワークWの上下両面が上定盤20と下定盤10とによって研磨される。 When polishing the work W with the flat surface polishing device 1 configured in this way, after the work W is set on each carrier 40, the upper surface plate 20 is evacuated by the extension of the elevating rod 32 driven by the elevating actuator 7. It descends from the position to the polishing position of FIG. 1, and the hook 22 attached to the upper surface plate 20 engages with the driver 17. In this state, when the first to fourth drive shafts 13-16 are driven and rotated by a drive device (not shown), each carrier 40 rotates and revolves around the sun gear 11, and the work held by each carrier 40. Both the upper and lower surfaces of W are polished by the upper surface plate 20 and the lower surface plate 10.

平面研磨装置1には、ワークWの厚さとキャリア40の厚さとを測定し、それらの厚さの差(ギャップ)が所定の値になった時点で研磨を終了するというギャップ管理方式の研磨を行うため、レーザー光でワークWの厚さとキャリア40の厚さとを測定するための厚さ測定装置が設けられている。それについて以下に説明する。
機体2には、レーザー光を出力する光源3と、演算制御部4とが設置され、上定盤20には、レーザー光を用いてワークWの厚さを測定するための第1厚さ測定器21aが設けられ、光源3と第1厚さ測定器21aとが、光ファイバー51aにより、ロータリコネクタ6を介して接続されている。上定盤20及び下定盤10の回転の影響を受けない位置には、キャリア40の厚さを測定するための第2厚さ測定器21bが設置されている。第2厚さ測定器21bと光源3とは光ファイバー51bによって接続されている。また、光源3は演算制御部4に接続されている。また、本実施形態では、光源3から出力されるレーザー光は赤外線レーザーであるが、ワークWとキャリア40のいずれの厚さも測定できるものであれば、他のレーザーであってもよい。
The flat surface polishing device 1 is subjected to a gap management type polishing in which the thickness of the work W and the thickness of the carrier 40 are measured, and the polishing is terminated when the difference (gap) between the thicknesses reaches a predetermined value. For this purpose, a thickness measuring device for measuring the thickness of the work W and the thickness of the carrier 40 with a laser beam is provided. It will be described below.
A light source 3 for outputting laser light and an arithmetic control unit 4 are installed on the machine body 2, and a first thickness measurement for measuring the thickness of the work W using laser light is performed on the upper surface plate 20. A device 21a is provided, and the light source 3 and the first thickness measuring device 21a are connected by an optical fiber 51a via a rotary connector 6. A second thickness measuring device 21b for measuring the thickness of the carrier 40 is installed at a position not affected by the rotation of the upper surface plate 20 and the lower surface plate 10. The second thickness measuring instrument 21b and the light source 3 are connected by an optical fiber 51b. Further, the light source 3 is connected to the arithmetic control unit 4. Further, in the present embodiment, the laser light output from the light source 3 is an infrared laser, but any other laser may be used as long as the thickness of both the work W and the carrier 40 can be measured.

ワークW及びキャリア40の厚さ測定のための機構について、さらに詳細に説明する。
支持スタッド33にはホルダー36が固定されており、このホルダー36に第1厚さ測定器21aを保持することで、第1厚さ測定器(プローブヘッド)21aが上定盤20の上側に取り付けられている。すなわち、第1厚さ測定器21aは、上定盤20と共に回転するように設けられている。なお、第1厚さ測定器21aは上定盤20と共に回転するように取り付けられていればよく、支持スタッド33以外の箇所に固定されていても構わない。この第1厚さ測定器21aの直下には、上定盤20を上下に貫通する第1厚さ測定孔23aが形成されている。第1厚さ測定孔23aには、ワーク用測定窓24aが取り付けられている。このワーク用測定窓24aは、合成樹脂製やガラス製などの筒状体で、第1厚さ測定孔23aの口径と略等しい外径を有し、該ワーク用測定窓24aの上端には、第1厚さ測定23aの直径よりも大径のフランジ部25aが設けられており、そのフランジ部25aを上定盤20の表面に係合させることにより取り付けられている。また、該ワーク用測定窓24aの下端には、透光性を有する窓板26aが設けられている。このように、第1厚さ測定器21aは常に第1厚さ測定孔23aの直上に位置することとなり、ワークWの厚さに関する測定データ数をより多く得ることができる。
また、図2に示すように、第1厚さ測定孔23aは、研磨加工中にワークWの中心付近の直上を通過する範囲Eに形成されている。これにより、第1厚さ測定23aがワークWの中心又は中心付近を通過するようにワークWの厚さを測定することができ、その結果、ワークWの厚さに関する測定データをより一層多く得ることができる。
The mechanism for measuring the thickness of the work W and the carrier 40 will be described in more detail.
A holder 36 is fixed to the support stud 33, and by holding the first thickness measuring instrument 21a in the holder 36, the first thickness measuring instrument (probe head) 21a is attached to the upper side of the upper surface plate 20. Has been done. That is, the first thickness measuring instrument 21a is provided so as to rotate together with the upper surface plate 20. The first thickness measuring instrument 21a may be attached so as to rotate together with the upper surface plate 20, and may be fixed at a place other than the support stud 33. Immediately below the first thickness measuring instrument 21a, a first thickness measuring hole 23a that vertically penetrates the upper surface plate 20 is formed. A work measuring window 24a is attached to the first thickness measuring hole 23a. The work measuring window 24a is a tubular body made of synthetic resin or glass, has an outer diameter substantially equal to the diameter of the first thickness measuring hole 23a, and has an outer diameter substantially equal to that of the first thickness measuring hole 23a. A flange portion 25a having a diameter larger than the diameter of the first thickness measuring hole 23a is provided, and the flange portion 25a is attached by engaging the flange portion 25a with the surface of the upper surface plate 20. Further, a translucent window plate 26a is provided at the lower end of the work measurement window 24a. In this way, the first thickness measuring instrument 21a is always located directly above the first thickness measuring hole 23a, and a larger number of measurement data regarding the thickness of the work W can be obtained.
Further, as shown in FIG. 2, the first thickness measuring hole 23a is formed in a range E that passes directly above the vicinity of the center of the work W during polishing. As a result, the thickness of the work W can be measured so that the first thickness measuring hole 23a passes through the center or the vicinity of the center of the work W, and as a result, the measurement data regarding the thickness of the work W is further increased. Obtainable.

第2厚さ測定器(プローブヘッド)21bは、上定盤20及び下定盤10の回転の影響を受けない位置に設置されており、本実施形態では機体2に設置されている。これにより、測定されたキャリア40の厚さに関する測定データに、研磨加工中に発生する振動によるノイズが混入することを防止することができる。上定盤20における第2厚さ測定器21bの直下の位置には、上定盤20を上下に貫通する第2厚さ測定孔23bが形成されている。第2厚さ測定孔23bには、第1厚さ測定孔23aと同様のフランジ部25bと窓板26bとを有するキャリア用測定窓24bが、フランジ部25bを上定盤20の表面に係合させて取り付けられている。
そして、第1厚さ測定孔23aと第2厚さ測定孔23bは、第1厚さ測定孔23aの中心と軸線Lとの距離と、第2厚さ測定孔23bの中心と軸線Lとの距離とが等しくなるように、上定盤20に形成されている。すなわち、第1厚さ測定孔23a、第2厚さ測定孔23b、第1厚さ測定器21a、第2厚さ測定器21bは、軸線Lを中心とした同一円周上に設けられている。
The second thickness measuring instrument (probe head) 21b is installed at a position that is not affected by the rotation of the upper surface plate 20 and the lower surface plate 10, and is installed on the machine body 2 in the present embodiment. As a result, it is possible to prevent noise due to vibration generated during polishing from being mixed in the measured measurement data regarding the thickness of the carrier 40. A second thickness measuring hole 23b that vertically penetrates the upper surface plate 20 is formed at a position directly below the second thickness measuring instrument 21b on the upper surface plate 20. In the second thickness measuring hole 23b, a carrier measuring window 24b having a flange portion 25b and a window plate 26b similar to the first thickness measuring hole 23a engages the flange portion 25b with the surface of the upper surface plate 20. It is attached by letting.
The first thickness measuring hole 23a and the second thickness measuring hole 23b are formed by the distance between the center of the first thickness measuring hole 23a and the axis L and the center of the second thickness measuring hole 23b and the axis L. It is formed on the upper surface plate 20 so that the distance is equal to that of the upper platen 20. That is, the first thickness measuring hole 23a, the second thickness measuring hole 23b, the first thickness measuring device 21a, and the second thickness measuring device 21b are provided on the same circumference centered on the axis L. ..

窓板26aの材料には、第1厚さ測定器21aから照射されるレーザー光と、ワークWから反射されるレーザー光とを透過する材料、具体的には、石英ガラス、BK−7等のガラス系材料、サファイア、樹脂等の透光性(光透過性)を有する材料、好ましくは透明の材料が用いられる。また、窓板26bの材料には、第2厚さ測定器21bから照射されるレーザー光と、キャリア40から反射されるレーザー光とを透過する物質、具体的には、石英ガラス、BK−7等のガラス系材料、サファイア、樹脂等の透光性(光透過性)を有する材料、好ましくは透明の材料が用いられる。 The material of the window plate 26a is a material that transmits the laser light emitted from the first thickness measuring instrument 21a and the laser light reflected from the work W, specifically, quartz glass, BK-7, or the like. A transparent material such as a glass-based material, sapphire, or resin, preferably a transparent material, is used. The material of the window plate 26b is a substance that transmits the laser light emitted from the second thickness measuring instrument 21b and the laser light reflected from the carrier 40, specifically, quartz glass and BK-7. Glass-based materials such as, sapphire, resin, and other materials having translucency (light transmissivity), preferably transparent materials are used.

昇降ロッド32には、昇降ロッド32の軸線Lと同一軸線上にロータリコネクタ6が配設されている。本実施形態では、昇降ロッド32の下端部と定盤吊り31との間にロータリコネクタ6が配設され、このロータリコネクタ6を介して、光源3と第1厚さ測定器21aとが光ファイバー51aにより接続されている。 The elevating rod 32 is provided with a rotary connector 6 on the same axis as the axis L of the elevating rod 32. In the present embodiment, the rotary connector 6 is arranged between the lower end of the elevating rod 32 and the surface plate suspension 31, and the light source 3 and the first thickness measuring instrument 21a are connected to the optical fiber 51a via the rotary connector 6. Is connected by.

以上の厚さ測定装置を用いて、ワークの厚さとキャリアの厚さとの差を管理するギャップ管理方式の研磨を行うときは、キャリア40の厚さの測定をワークWの非研磨時に行い、ワークの厚さの測定は研磨中に行う。
すなわち、キャリア40の厚さ測定は、最初のワークを研磨する前か、ワークの研磨終了後に研磨スラリーや洗浄水等の水切りを行った後、次のワークWを研磨する前などに行われる。
具体的には、キャリア40の厚さ測定は、第2厚さ測定孔23bに取り付けられたキャリア用測定窓24bが第2厚さ測定器21bの直下に位置する状態で、上定盤20の回転を停止させると共に上昇させた状態とし、その状態で、キャリア40をゆっくりと自転及び公転させながら行われる。このとき、第2厚さ測定器21bから照射されたレーザー光は、キャリア用測定窓24bの窓板26bを通過してキャリア40の表面及び裏面に到達し、その表面及び裏面からの反射光が窓板26bを通過して第2厚さ測定器21bで受信される。そして、受信された反射光は、光ファイバー51bを介して演算制御部4に伝送され、この反射光に基づいてキャリア40の厚さが演算制御部4で演算される。
このとき、第2厚さ測定器21bは、光源3からロータリコネクタ6を介さずに光ファイバー51bで接続されているため、ロータリコネクタ6を介して接続する場合のようにキャリア40に照射されたレーザー光やその反射光が減衰やノイズ等による影響を受けることなく、その厚さを確実に測定することができる。
When polishing the gap management method for controlling the difference between the thickness of the work and the thickness of the carrier using the above thickness measuring device, the thickness of the carrier 40 is measured when the work W is not polished, and the work is polished. The thickness of the is measured during polishing.
That is, the thickness of the carrier 40 is measured before polishing the first work, after draining the polishing slurry, washing water, etc. after polishing the work, and before polishing the next work W.
Specifically, the thickness of the carrier 40 is measured on the upper surface plate 20 with the carrier measurement window 24b attached to the second thickness measuring hole 23b located directly below the second thickness measuring instrument 21b. The rotation is stopped and raised, and in that state, the carrier 40 is slowly rotated and revolved. At this time, the laser light emitted from the second thickness measuring instrument 21b passes through the window plate 26b of the carrier measuring window 24b and reaches the front surface and the back surface of the carrier 40, and the reflected light from the front surface and the back surface is emitted. It passes through the window plate 26b and is received by the second thickness measuring instrument 21b. Then, the received reflected light is transmitted to the arithmetic control unit 4 via the optical fiber 51b, and the thickness of the carrier 40 is calculated by the arithmetic control unit 4 based on the reflected light.
At this time, since the second thickness measuring instrument 21b is connected from the light source 3 by the optical fiber 51b without passing through the rotary connector 6, the laser irradiated to the carrier 40 as in the case of connecting via the rotary connector 6. The thickness of light and its reflected light can be reliably measured without being affected by attenuation, noise, or the like.

一方、ワークWの厚さ測定は、上定盤20と下定盤10との間に研磨スラリーを供給しながら、ワークWを研磨する際に行われる。
具体的には、第1厚さ測定器21aから照射されるレーザー光は、光源3から出力されたレーザー光であり、ロータリコネクタ6を介した光ファイバー51aにより伝送される。第1厚さ測定器21aから照射されるレーザー光は、第1厚さ測定器21aの直下に形成された第1厚さ測定孔23aに取り付けられたワーク用測定窓24aの窓板26aの直下にワークWが位置している時(ワークWが窓板26aの直下を通過している時)に、窓板26aを通過してワークWの表面及び裏面に到達し、ワークWの表面及び裏面からの反射光が窓板26aを通過して第1厚さ測定器21aで受光される。受光された反射光は、光ファイバー51a、ロータリコネクタ6を介して演算制御部4に伝送され、この反射光に基づいてワークWの厚さが演算制御部4で演算される。
On the other hand, the thickness measurement of the work W is performed when polishing the work W while supplying the polishing slurry between the upper surface plate 20 and the lower surface plate 10.
Specifically, the laser light emitted from the first thickness measuring instrument 21a is the laser light output from the light source 3, and is transmitted by the optical fiber 51a via the rotary connector 6. The laser beam emitted from the first thickness measuring instrument 21a is directly below the window plate 26a of the work measuring window 24a attached to the first thickness measuring hole 23a formed directly under the first thickness measuring instrument 21a. When the work W is located at (when the work W passes directly under the window plate 26a), it passes through the window plate 26a and reaches the front surface and the back surface of the work W, and the front surface and the back surface of the work W. The reflected light from the above passes through the window plate 26a and is received by the first thickness measuring instrument 21a. The received reflected light is transmitted to the arithmetic control unit 4 via the optical fiber 51a and the rotary connector 6, and the thickness of the work W is calculated by the arithmetic control unit 4 based on the reflected light.

測定されたワークWの厚さとキャリア40の厚さとは、演算制御部4で比較され、それらの差が所定の値になった時点で研磨が終了する。これによって、平坦度の高い所望のワークWを得ることができる。 The measured thickness of the work W and the thickness of the carrier 40 are compared by the arithmetic and control unit 4, and polishing ends when the difference between them reaches a predetermined value. Thereby, a desired work W having a high flatness can be obtained.

なお、本実施形態では、第1厚さ測定器21aと第2厚さ測定器21b、及び第1厚さ測定孔23aと第2厚さ測定孔23bは、軸線Lから等距離となるように上定盤20に形成されている。しかしながら、装置構造を勘案し、第1厚さ測定器21aと第1厚さ測定23a、又は第2厚さ測定器21bと第2厚さ測定孔23bは、軸線Lからの距離を異なる距離となる位置に形成してもよい。 In the present embodiment, the first thickness measuring instrument 21a and the second thickness measuring instrument 21b, and the first thickness measuring hole 23a and the second thickness measuring hole 23b are equidistant from the axis L. It is formed on the upper surface plate 20. However, in consideration of the device structure, the first thickness measuring instrument 21a and the first thickness measuring hole 23a, or the second thickness measuring instrument 21b and the second thickness measuring hole 23b have different distances from the axis L. It may be formed at the position where

また、キャリア40の厚さ測定は、ワークWの研磨時に行ってもよい。このワークWの研磨時におけるキャリア40の厚さ測定は、上定盤20の回転と、キャリア40の自転及び公転とによって、第2厚さ測定器21b及び第2厚さ測定孔23bの直下にキャリア40が位置する時に測定される。このとき、上定盤20と下定盤10との間に研磨スラリーが供給されているため、第2厚さ測定器21bで受信される反射光は、研磨スラリーや洗浄水等に起因するノイズを含むが、キャリア40からの反射強度がノイズの値よりも大きくなるキャリア40の材料を適宜選択することで、ノイズの影響の少ない測定を行うことができる。
また、キャリア40の厚さ測定をワークWの研磨時に行う場合には、第2厚さ測定孔23bを上定盤20に複数形成することが望ましい。この場合において、各第2厚さ測定孔23bは、軸線Lを中心点とする同一円周上に互いに等距離となるように形成され、かつ、各第2厚さ測定孔23bと軸線Lとの距離が、第2厚さ測定器21bと軸線Lとの距離と等しくなるように形成される。
Further, the thickness of the carrier 40 may be measured at the time of polishing the work W. The thickness of the carrier 40 at the time of polishing the work W is measured directly under the second thickness measuring instrument 21b and the second thickness measuring hole 23b by the rotation of the upper surface plate 20 and the rotation and revolution of the carrier 40. Measured when the carrier 40 is located. At this time, since the polishing slurry is supplied between the upper surface plate 20 and the lower surface plate 10, the reflected light received by the second thickness measuring instrument 21b causes noise caused by the polishing slurry, washing water, and the like. However, by appropriately selecting the material of the carrier 40 in which the reflection intensity from the carrier 40 is larger than the noise value, the measurement with less influence of noise can be performed.
Further, when the thickness of the carrier 40 is measured at the time of polishing the work W, it is desirable to form a plurality of second thickness measuring holes 23b in the upper surface plate 20. In this case, each of the second thickness measuring holes 23b is formed so as to be equidistant from each other on the same circumference centered on the axis L, and each of the second thickness measuring holes 23b and the axis L Is formed so that the distance between the two is equal to the distance between the second thickness measuring instrument 21b and the axis L.

さらに、第1厚さ測定器21a及び第2厚さ測定器21bで測定したワークW及びキャリア40の厚さに関する測定データは、反射光のまま演算制御部4で演算するようにしているが、ワークW及びキャリア40からの反射光を第1厚さ測定器21a及び第2厚さ測定器21bで電気信号に変換し、該第1厚さ測定器21aと演算制御部4とをロータリコネクタ6を介して結ぶ電気ケーブル(不図示)を通じて演算制御部4に送るようにし、該第2厚さ測定器21bと演算制御部4とをロータリコネクタ6を介さずに結ぶ電気ケーブル(不図示)を通じて演算制御部4に送るようにしても良く、あるいは、第1厚さ測定器21a及び第2厚さ測定器21bから無線で演算制御部4に送ることによっても、本発明と同様の作用効果を得ることができる。 Further, the measurement data regarding the thickness of the work W and the carrier 40 measured by the first thickness measuring device 21a and the second thickness measuring device 21b is calculated by the calculation control unit 4 as the reflected light. The reflected light from the work W and the carrier 40 is converted into an electric signal by the first thickness measuring instrument 21a and the second thickness measuring instrument 21b, and the first thickness measuring instrument 21a and the arithmetic control unit 4 are connected to the rotary connector 6 The second thickness measuring instrument 21b and the arithmetic control unit 4 are connected to the arithmetic control unit 4 through an electric cable (not shown) connected via a rotary connector 6 (not shown). The same operation and effect as in the present invention may be obtained by sending the data to the arithmetic control unit 4 or by wirelessly sending the data from the first thickness measuring device 21a and the second thickness measuring instrument 21b to the arithmetic control unit 4. Obtainable.

さらに、光源3、演算制御部4、第2厚さ測定器21bの設置位置は、上定盤20や下定盤10等の回転や昇降を伴う構成以外の箇所に設置されていれば、機体2とは別に設けられた保持手段等により、機体2以外の箇所に設置されていても本発明の作用効果を得ることができる。 Further, if the light source 3, the arithmetic control unit 4, and the second thickness measuring instrument 21b are installed at a location other than the upper surface plate 20 or the lower surface plate 10 that involves rotation or ascending / descending, the machine body 2 The operation and effect of the present invention can be obtained even if it is installed in a place other than the machine body 2 by a holding means or the like provided separately from the above.

1 平面研磨装置
2 機体
3 光源
6 ロータリコネクタ
10 下定盤
20 上定盤
21a 第1厚さ測定器
21b 第2厚さ測定器
24a ワーク用測定窓
24b キャリア用測定窓
31 定盤吊り
32 昇降ロッド(昇降軸)
40 キャリア
W ワーク
1 Flat surface polishing device 2 Machine 3 Light source 6 Rotary connector 10 Lower platen
20 Upper surface plate 21a First thickness measuring instrument 21b Second thickness measuring instrument 24a Measuring window for work 24b Measuring window for carrier 31 Surface plate suspension 32 Lifting rod (lifting shaft)
40 Carrier W Work

Claims (3)

回転自在に支持された下定盤と、
昇降自在且つ回転自在に支持された上定盤と、
前記上定盤と下定盤との間に配置され、該上定盤と下定盤とで研磨されるワークを保持するキャリアを有し、前記キャリアに保持されたワークを前記上定盤と下定盤とで挟持して前記ワークの両面を研磨する平面研磨装置であって、
前記キャリアは、少なくとも一部が透光性を有する材料で形成され、
前記上定盤に取り付けられ、前記ワークにレーザー光を照射して該ワークの表面及び裏面からの反射光を受光することにより該ワークの厚さを測定する第1厚さ測定器と、
前記上定盤及び下定盤を支持する機体に取り付けられ、前記キャリアにレーザー光を照射して該キャリアの表面及び裏面からの反射光を受光することにより該キャリアの厚さを測定する第2厚さ測定器と、を有する
ことを特徴とする平面研磨装置。
The lower platen that is rotatably supported and
An upper surface plate that can be raised and lowered and rotated freely,
It has a carrier that is arranged between the upper surface plate and the lower surface plate and holds a work that is polished by the upper surface plate and the lower surface plate, and the work held by the carrier is the upper surface plate and the lower surface plate. A flat surface polishing device that is sandwiched between and polishes both sides of the work.
The carrier is made of a material that is at least partially translucent.
A first thickness measuring device attached to the upper surface plate, which measures the thickness of the work by irradiating the work with laser light and receiving reflected light from the front surface and the back surface of the work.
A second thickness that is attached to the machine body that supports the upper and lower surface plates and measures the thickness of the carrier by irradiating the carrier with laser light and receiving reflected light from the front and back surfaces of the carrier. A surface polishing apparatus characterized by having a measuring instrument.
前記平面研磨装置は、
前記レーザー光の光源を有し、
前記第1厚さ測定器は、ロータリコネクタを介して前記光源に接続されている、
ことを特徴とする請求項1に記載の平面研磨装置。
The surface polishing device is
It has the light source of the laser light
The first thickness measuring instrument is connected to the light source via a rotary connector.
The flat surface polishing apparatus according to claim 1.
前記上定盤には、レーザー光を透過させるワーク用測定窓及びキャリア用測定窓が形成され、前記第1厚さ測定器は、前記ワーク用測定窓を通して前記ワークの厚さを測定し、前記第2厚さ測定器は、前記キャリア用測定窓を通して前記キャリアの厚さを測定することを特徴とする請求項1又は2に記載の平面研磨装置。 A work measuring window and a carrier measuring window for transmitting laser light are formed on the upper surface plate, and the first thickness measuring instrument measures the thickness of the work through the work measuring window. The surface polishing apparatus according to claim 1 or 2, wherein the second thickness measuring instrument measures the thickness of the carrier through the measuring window for the carrier.
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