JP6792322B2 - Semiconductor devices and methods for manufacturing semiconductor devices - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device obtained by the method. More specifically, the present invention relates to a method for manufacturing a semiconductor device for efficiently and at low cost to manufacture a semiconductor device with high demand for miniaturization and high density, and a semiconductor device obtained by the method.

For the purpose of increasing the density and performance of semiconductor packages, mounting forms in which chips with different performances are mixedly mounted in one package have been proposed, and high-density interconnect technology between chips with excellent cost has become important. (See, for example, Patent Document 1).

As a three-dimensional mounting form, a package-on-package that connects different packages by stacking them by flip-chip mounting is widely adopted in smartphones and tablet terminals (for example, Non-Patent Document 1 and Non-Patent Document 2). reference). As a form for mounting at a higher density, a packaging technology using an organic substrate having high-density wiring, a packaging technology using a silicon or glass interposer, a packaging technology using a through silicon via (TSV), and embedding in a substrate. A packaging technique or the like in which the chip is used for inter-chip transmission has been proposed (see, for example, Patent Document 1).

Special Table 2012-528770

Application of Technology Mold Via (TMV) as PoP Base Package, Electronics Components and Technology Conference (ECTC), 2008 Advanced Low Profile PoP Solution with Embedded Wafer Level PoP (eWLB-PoP) Technology, ECTC, 2012

It is difficult to obtain a sufficient yield for a package using an organic substrate having high-density wiring because fine wiring needs to be laminated, and a package using a silicon or glass interposer requires a large-area interposer, so that the package warps. And there was a problem with cost. Further, when a through silicon via is used for high density, there are problems of yield and cost.

An object of the present invention is to provide a method for manufacturing a semiconductor device capable of high-density transmission at a good yield and low cost, and a semiconductor device obtained by the method.

The first aspect of the present invention is
(I) A process of mounting a plurality of first semiconductor elements (chips) on a carrier, and
(II) A step of collectively sealing the first semiconductor element with an insulating material to form a sealed body, and
(III) A step of peeling off the carrier to expose the electrode of the first semiconductor element, and
(IV) A step of mounting the second semiconductor element by flip-chip connection so as to straddle two or more first semiconductor elements of the plurality of first semiconductor elements.
It is a manufacturing method of a semiconductor device provided with.

According to the above invention, since a plurality of semiconductor elements are collectively sealed with an insulating material, handleability is improved, and a semiconductor device can be manufactured at low cost. The flip-chip connection is a mounting method in which the IC electrode and the substrate electrode are opposed to each other via a bump and face-down to be collectively connected.

In addition, the sealing process using the insulating material in step (II) is a laminating process from the viewpoint that it can be manufactured at a lower cost than the compression mold using a liquid or solid sealing material and the damage to the semiconductor element is small. Is preferable.

Further, in the step (IV), the second semiconductor element is under-filled from the viewpoint that even a fine bump structure can be filled well and the semiconductor element is less damaged than the method of filling the capillary underfill after mounting the semiconductor element. It is preferable to use a filled chip.

The second semiconductor element can be mounted by using an underfill, and as the underfill, for example, a film-shaped underfill can be used, and a photosensitive underfill to which photosensitivity is imparted can also be used.

A second aspect of the present invention is a semiconductor device obtained by the above manufacturing method. According to the present invention, a semiconductor device capable of high-density transmission can be obtained with good yield and low cost.

According to the present invention, it is possible to provide a method for manufacturing a semiconductor device capable of high-density transmission at a good yield and low cost, and a semiconductor device obtained by the method.

It is sectional drawing which shows typically the state which mounted the 1st semiconductor element on the carrier. It is sectional drawing which shows typically the state in which the 1st semiconductor element is sealed with the insulating material. It is sectional drawing which shows typically the state which polished the surface where the 1st semiconductor element was sealed with the insulating material. It is sectional drawing which shows typically the state which the carrier was peeled off and the electrode of the 1st semiconductor element was exposed. It is sectional drawing which shows typically the semiconductor package which mounted the 2nd semiconductor element so that it straddles a plurality of 1st semiconductor elements. It is sectional drawing which shows typically the state which mounted the metal connecting member. It is sectional drawing which shows typically the state which mounted on the substrate and filled with underfill. It is sectional drawing which shows typically the semiconductor wafer. It is sectional drawing which shows typically the state which the film-like underfill is mounted on the semiconductor wafer. It is sectional drawing which shows typically the individualized semiconductor element with underfill. It is sectional drawing which shows typically the state which used the semiconductor element laminate which used the through silicon via (TSV) as the first semiconductor element. It is a top view which shows typically the semiconductor package which mounted the 2nd semiconductor element so that it straddles a plurality of 1st semiconductor elements.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts will be designated by the same reference numerals, and duplicate description will be omitted. Further, unless otherwise specified, the positional relationship such as up, down, left, and right shall be based on the positional relationship shown in the drawings. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown.

When terms such as "left", "right", "front", "back", "top", "bottom", "upper", and "lower" are used, these are intended to be explained. It does not necessarily mean that it is in this relative position forever.

A method for manufacturing the semiconductor package 101 (semiconductor device) shown in FIGS. 5 and 6 according to the embodiment of the present invention will be described. The method for manufacturing a semiconductor device of the present invention is particularly suitable in a form in which miniaturization and multi-pinning are required. In particular, the manufacturing method of the present invention is suitable in a package form that requires an interposer for mounting different types of chips.

The manufacturing method of the semiconductor package 101 of FIGS. 5 and 6 will be described with reference to FIGS. 1 to 12. First, the semiconductor element 2 (first semiconductor element) is fixed on the carrier 1 so that the electrode 7 of the semiconductor element 2 is arranged on the carrier 1 side (FIG. 1).

The carrier 1 is not particularly limited, but is a silicon plate, a glass plate, a SUS plate, a substrate containing a glass cloth, or the like, and a substrate made of a highly rigid material is preferable. It is also possible to form a resin layer for fixing the semiconductor element 2 or a metal thin film with a resin layer on the carrier.

For the resin layer, for example, a resin containing a non-polar component such as silicone or fluorine, or a resin containing a component that expands in volume or foams by heating can be used.

The thickness of the carrier 1 is preferably in the range of 0.2 mm to 2.0 mm. If it is thinner than 0.2 mm, handling becomes difficult, while if it is thicker than 2.0 mm, the material cost tends to be high.

The carrier 1 may be in the form of a wafer or a panel. The size is not particularly limited, but a wafer having a diameter of 200 mm, a diameter of 300 mm or a diameter of 450 mm, and a rectangular panel having a side of 300 to 700 mm are preferably used.

As the semiconductor element 2, one in which semiconductor elements are laminated can also be used, and for example, a semiconductor element laminate laminated using TSV can be used. FIG. 11 shows an example in which a semiconductor element laminate is used as the first semiconductor element. The thickness of the semiconductor element 2 is preferably 400 μm or less from the viewpoint of reducing the warpage by thinning the insulating material, and more preferably 200 μm or less from the viewpoint of further thinning the package. Further, from the viewpoint of handleability, it is preferably 30 μm or more.

As the semiconductor element 2, a CPU, a graphic processing unit GPU, a volatile memory such as DRAM or SRAM, a non-volatile memory such as a flash memory, an RF chip, or a chip having a performance combining these is preferably used.

Next, the insulating material 3 is used to collectively seal the semiconductor element 2 so as to cover the semiconductor element 2 to form the sealing body 3 (FIG. 2). The insulating material 3 is not particularly limited, but a liquid, solid, film-like or sheet-like (hereinafter, also simply referred to as “film-like”) insulating material can be used. A film-like insulating material is preferable because it can be sealed with low warpage and low cost, and also avoids contamination in a clean room environment.

Sealing with a film-like insulating material may be a laminating method or a compression method. A photosensitive resin material can be used as the insulating material. Further, the insulating material preferably contains a thermosetting component, and may be further cured by heating after sealing. The heating temperature and time are, for example, 120 to 180 ° C. and 30 minutes to 3 hours.

The average coefficient of thermal expansion of the insulating material 3 from room temperature to 120 ° C. after heat curing is preferably in the range of 25 × 10 ⁻⁶ / ° C. to 100 × 10 ⁻⁶ / ° C. If it is smaller than 25 × 10 ^-6 / ° C, the insulating material tends to be brittle. On the other hand, if it is larger than 100 × 10 ^-6 / ° C., the package tends to warp and handling tends to be difficult. For the same reason, the room temperature elastic modulus of the insulating material 3 after heat curing is preferably in the range of 1 GPa to 10 GPa.

The thickness (thickness) (height from the surface in contact with the carrier 1) of the sealing body 3 is preferably 50 to 400 μm. If the thickness is less than 50 μm, the upper part of the sealed sample tends to undulate due to insufficient fluidity of the resin, and if it exceeds 400 μm, the warp tends to increase.

After sealing, the sealing body 3 and the semiconductor element 2 can be polished to make them thinner (FIG. 3). As a result, the semiconductor package obtained by this process can be thinned. Further, when the semiconductor element sealing package 100 becomes thin, the performance can be improved by laminating the semiconductor element sealing package 100.

Next, the carrier 1 is peeled off to obtain a semiconductor element sealing package 100 (FIG. 4). The peeling method is not particularly limited, and examples thereof include peel peeling, slide peeling, heat peeling, and laser peeling. It can also be washed with a solvent, plasma or the like after peeling.

Next, the semiconductor element 4 (second semiconductor element) is mounted on the semiconductor element sealing package 100 via the underfill 5 so as to straddle the plurality of semiconductor elements 2, and the semiconductor package 101 is manufactured (FIG. 5). At this time, the connection electrode portion 6 of the semiconductor element 4 and the electrode 7 of the semiconductor element 2 are electrically connected. The connection electrode portion 6 and the electrode 7 are formed by using, for example, gold bumps and copper bumps formed by plating, bumps in which solder is formed on copper, copper exposed by polishing, and gold wire, respectively. Examples include gold stud bumps, and metal balls fixed to electrode pads by thermocompression bonding using ultrasonic waves as needed. Further, the connecting electrode portion 6 and the electrode 7 may be a laminated body including a plurality of metal layers.

The connecting electrode portion 6 does not have to be composed of a single metal, and may include a plurality of metals. Specifically, a plurality of gold, silver, copper, nickel, indium, palladium, tin, bismuth and the like may be contained.

The mounting method is not particularly limited, but a method of injecting an underfill with a capillary after mounting the semiconductor element 4, a method of molding a solid underfill after mounting the semiconductor element 4, and a method of mounting after applying a liquid underfill. , A method of mounting after applying a film-like underfill can be mentioned. The underfill 5 may be applied to either the semiconductor element 4 or the semiconductor element sealing package 100.

A film-like underfill 5 is laminated on a semiconductor wafer 4'(FIG. 8) having a connection electrode portion 6 from the viewpoint of manufacturing cost, yield, and connection with high-density bumps (FIG. 9). After that, it is preferable to crimp the fragmented semiconductor element 4 (FIG. 10).

The film-like underfill may be photosensitive. If it is photosensitive, unnecessary underfill on the connecting electrode portion 6 or electrode 7 can be removed by exposure and development, so that a good connector without underfill biting can be obtained.

As a crimping method, for example, a method of connecting a fragmented semiconductor element 4 and a fragmented semiconductor element encapsulation package 100, an individualized semiconductor element 4 and a panel or wafer state semiconductor element encapsulation package 100 The latter is preferable from the viewpoint of manufacturing cost and handleability. Crimping is usually carried out at 80 to 350 ° C. for 3 to 30 seconds. When the crimping temperature is lower than 220 ° C., a good metal connection state can be obtained by the reflow process.
In order to manufacture a semiconductor package more efficiently, the fragmented semiconductor element 4 and the semiconductor element sealing package 100 in a panel or wafer state are temporarily crimped at 150 ° C. or lower, and then metal-connected by a reflow process. Is the most preferable.

By preliminarily manufacturing a semiconductor element encapsulation package 100 in which a plurality of semiconductor elements 2 are sealed, deformation such as misalignment and deflection when the semiconductor element 4 is mounted is compared with a method in which the semiconductor elements 2 are individually mounted. Can be prevented. Moreover, it can be easily handled even after the semiconductor element 4 is mounted.

Since the semiconductor element 4 is obtained by the existing silicon process technology, the interconnect pitch and width are higher than those in the case where the semiconductor element 4 is formed in the organic substrate. Therefore, an excellent interconnect density between elements can be obtained by adopting this structure.

As the semiconductor element 4, for example, a system-on-package, silicon photonics chip, MEMS, or sensor chip can be used.

As shown in FIG. 6, the semiconductor package 101 may have a metal connecting member 9.
Specifically, a metal connecting member 9 for electrical connection such as a solder ball is mounted on an electrode (not shown) of the semiconductor element 2 (FIG. 6) and separated into individual pieces (not shown). The metal connecting member 9 can be easily mounted by using a commercially available N ₂ reflow device or the like.

A top view of the semiconductor package 101 obtained by the above method is shown in FIG. In this embodiment, since a semiconductor element is used for transmission between chips, high-speed communication is possible.

Further, the substrate 8 is attached to the semiconductor package 101 via the underfill 10 (FIG. 7).

Although the method for manufacturing a semiconductor device according to an embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment, and modifications may be made as appropriate without departing from the spirit of the present invention.

1 ... Carrier, 2 ... Semiconductor element (first semiconductor element), 3 ... Insulating material or sealant, 4 ... Semiconductor element (second semiconductor element), 5 ... Underfill, 6 ... Connection electrode portion, 7 ... Electrode, 8 ... Substrate, 9 ... Metal connection member, 10 ... Underfill, 11 ... Semiconductor device laminate, 100 ... Semiconductor device encapsulation package, 101 ... Semiconductor package (semiconductor device)

Claims (5)

(I) A process of mounting a plurality of first semiconductor elements on a carrier, and
(II) A step of collectively sealing the first semiconductor element with an insulating material and heat-curing it to form a sealed body.
(III) A step of peeling off the carrier to expose the electrode of the first semiconductor element, and
(IV) A step of mounting the second semiconductor element by flip-chip connection so as to straddle two or more first semiconductor elements of the plurality of first semiconductor elements.
Of (V) of the first semiconductor element, the surface facing the second semiconductor element, a step of forming a metal connecting member,
With
After the step (IV), the step (V) is performed.
The second semiconductor element is a chip with an underfill, and the underfill of the second semiconductor element comes into contact with the first semiconductor element.
A method for manufacturing a semiconductor device, wherein the average coefficient of thermal expansion of the insulating material from room temperature to 120 ° C. after heat curing is in the range of 25 × 10 ⁻⁶ / ° C. to 100 × 10 ⁻⁶ / ° C. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating material is a film-like material or a sheet-like material. The underfill method of manufacturing a semiconductor device according to claim 1, wherein the material of the film-like material or sheet. The method for manufacturing a semiconductor device according to claim 1 or 3 , wherein the underfill is a photosensitive material. The production of the semiconductor device according to any one of claims 1 to 4 , further comprising (II-1) a step of thinning the sealed body after the step (II) and before the step (III). Method.

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